Transistor reliable life prediction method based on beta value degradation
By β -based degenerative methods, combined with high -temperature anti -bias test and steady -state power test, the failure physical model is used to perform the reliability life prediction of the transistor, which solves the problem of insufficient accuracy in the existing technology, and achieves more accurate reliability life forecasts.
CN119355480AActive Publication Date: 2025-01-24CHINA AEROSPACE STANDARDIZATION INST
Patent Information
- Application Number
- CN202411809071.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-10
- Publication Date
- 2025-01-24
- Estimated Expiration
- 2044-12-10
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Figure CN119355480A_ABST
Abstract
The invention discloses a transistor reliable life prediction method based on beta value degradation, transistor reliable life prediction is based on a failure physical model, and compared with a traditional reliable life prediction method based on mathematical statistics, sensitive parameter degradation conditions of a transistor can be reflected more accurately from transistor microcosmic failure physics. Therefore, the accuracy of predicting the reliable life of the transistor is improved; initial distribution of a sensitive parameter beta is considered in the reliable life prediction of the transistor, the actual condition of external characteristic parameters of the transistor is better met, life prediction under the specified reliability is given based on the actual condition, and the method has more guiding significance in engineering application of the transistor.
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Citation Information
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