Microobjective of far ultraviolet-blue light band, detection device and method

Abstract

The invention provides a far ultraviolet-blue light band microscope objective, a detection device and a detection method. The far ultraviolet-blue light band microscope objective comprises a first lens group, a second catadioptric lens group and a third catadioptric lens group. The first lens group has a negative first spherical aberration, a positive first coma aberration, a negative first axial chromatic aberration, and a negative first lateral chromatic aberration. The second catadioptric lens group has a negative second spherical aberration, a positive second coma aberration, a negative second axial chromatic aberration, and a negative second lateral chromatic aberration. The third catadioptric lens group has a third spherical aberration, a third coma aberration, a third axial chromatic aberration, and a third lateral chromatic aberration. The first focal length fS1 of the first lens group, the second focal length fS2 of the second catadioptric lens group, the third focal length fS3 of the third catadioptric lens group and the total focal length fE1 of the microscope objective meet the following relation: fS1 / fS3lt, 1.5, fS1 / fS2lt; 1.5, 1lt; fS1 / fE1lt; 3.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor defect detection, and in particular to a far ultraviolet-blue light band microscope objective, a semiconductor device defect detection device, and a semiconductor device defect detection method. Background Art

[0002] As the integration of large-scale integrated circuits becomes higher and higher, improving the accuracy of surface defect detection of semiconductor silicon wafers has become an important issue in the integrated circuit manufacturing process. At present, the commonly used methods for defect detection of semiconductor devices are optical microscopic imaging detection method and electron beam detection method. Since the detection speed of the former is much faster than the latter, the use of optical microscopic imaging detection method for defect detection of semiconductor devices has become the main method in the industry. In the detection system based on optical microscopic imaging method, the microscope objective is the most critical component, which directly affects the detection resolution and detection speed. Therefore, it is of great significance for the optical microscopic imaging detection system to design high-quality microscope objective lenses to further improve its detection resolution and detection speed.

[0003] The existing patent CN116338924A discloses a microscopic imaging system with a large field of view and high numerical aperture in the near-ultraviolet-blue light band (350-550nm). However, the microscopic imaging system has a low resolution in the far-ultraviolet band (e.g., 255-340nm) and cannot detect semiconductor defects of a smaller size, thus failing to meet the process requirements for semiconductor defect detection in the corresponding band.

[0004] In order to overcome the above-mentioned defects of the prior art, the present invention provides a microscope objective lens in the far ultraviolet-blue light band, a semiconductor device defect detection device and a semiconductor device defect detection method, which are used to achieve large field of view and high numerical aperture microscopic imaging in the far ultraviolet-blue light band to meet the process requirements of semiconductor defect detection based on the far ultraviolet band. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a microscope objective lens in the far ultraviolet-blue light band, a semiconductor device defect detection device and a semiconductor device defect detection method, which can achieve the balance of microscope objective aberrations through three groups of lenses, and realize large field of view and high numerical aperture microscope imaging in the far ultraviolet-blue light band to meet the process requirements of semiconductor defect detection based on the far ultraviolet band.

[0007] Specifically, the above-mentioned microscope objective lens for the far ultraviolet-blue light band provided according to the first aspect of the present invention comprises a first lens group, a second catadioptric lens group and a third catadioptric lens group. The first lens group has a negative first spherical aberration, a positive first coma, a negative first axial chromatic aberration and a negative first lateral chromatic aberration. The second catadioptric lens group has a negative second spherical aberration, a positive second coma, a negative second axial chromatic aberration and a negative second lateral chromatic aberration. The third catadioptric lens group has a third spherical aberration that compensates for the first spherical aberration and the second spherical aberration, a third coma that compensates for the first coma and the second coma, a third axial chromatic aberration that compensates for the first axial chromatic aberration and the second axial chromatic aberration, and a third lateral chromatic aberration that compensates for the first lateral chromatic aberration and the second lateral chromatic aberration. The first focal length fS1 of the first lens group, the second focal length fS2 of the second catadioptric lens group, the third focal length fS3 of the third catadioptric lens group, and the total focal length fE1 of the microscope objective satisfy the relationship: |fS1 / fS3|<1.5, |fS1 / fS2|<1.5, 1<|fS1 / fE1|<3.

[0008] Furthermore, in some embodiments of the present invention, the third catadioptric lens group includes a first diffuse gold mirror and a second diffuse gold mirror in sequence. The light from the object side passes through the first diffuse gold mirror to reach the second diffuse gold mirror, is reflected by the second diffuse gold mirror and reaches the first diffuse gold mirror, is reflected by the first diffuse gold mirror again, passes through the second diffuse gold mirror and reaches the second catadioptric lens group.

[0009] Further, in some embodiments of the present invention, the radii of the first surface and the second surface of the first diffuse gold mirror are 50.04 mm and 86.47 mm, respectively. The thickness of the first diffuse gold mirror is 10.67 mm. The radii of the first surface and the second surface of the second diffuse gold mirror are 288.26 mm and 126.31 mm, respectively. The thickness of the second diffuse gold mirror is 14.24 mm. The distance from the second surface of the first diffuse gold mirror to the first surface of the second diffuse gold mirror is 11.62 mm.

[0010] Furthermore, in some embodiments of the present invention, the second catadioptric lens group includes a third diffuse gold mirror, a first positive lens, a second positive lens, a first negative lens and a reflector in sequence. The light output by the third catadioptric lens group first passes through the third diffuse gold mirror, the first positive lens, the second positive lens and the first negative lens in sequence to reach the reflective surface of the reflector, and then passes through the first negative lens, the second positive lens and the first positive lens in sequence after being reflected by the reflector to reach the third diffuse gold mirror, and then passes through the first positive lens, the second positive lens, the first negative lens and the light hole at the optical axis of the reflector in sequence after being reflected by the third diffuse gold mirror to reach the first lens group.

[0011] Further, in some embodiments of the present invention, the radii of the first surface and the second surface of the third diffuse gold mirror are -154.63 mm and -103.74 mm, respectively. The thickness of the third diffuse gold mirror is 24.59 mm. The radii of the first surface and the second surface of the first positive lens are -47.50 mm and -50.49 mm, respectively. The thickness of the first positive lens is 6.81 mm. The radii of the first surface and the second surface of the second positive lens are -67.68 mm and -128.80 mm, respectively. The thickness of the second positive lens is 10.13 mm. The radii of the first surface and the second surface of the first negative lens are 108.51 mm and -225.88 mm, respectively. The thickness of the first negative lens is 8.05 mm. The radius of the reflective surface of the reflector is 91.02 mm.

[0012] Further, in some embodiments of the present invention, the distance from the first surface of the third diffuse gold mirror to the light exit position of the third folding and reflecting lens group is 51.02 mm. The distance from the second surface of the third diffuse gold mirror to the first surface of the first positive lens is 0.05 mm. The distance from the second surface of the first positive lens to the first surface of the second positive lens is 5.43 mm. The distance from the second surface of the second positive lens to the first surface of the first negative lens is 10.98 mm. The distance from the second surface of the first negative lens to the reflective surface of the reflector is 13.31 mm.

[0013] Further, in some embodiments of the present invention, the first lens group includes a third positive lens, a fourth positive lens, a fifth positive lens, an aperture, a sixth positive lens, a second negative lens, a third negative lens, a seventh positive lens and an eighth positive lens in sequence. The third positive lens extends into the light-through hole at the optical axis of the reflector to obtain the light output by the second catadioptric lens group. The light passes through the third positive lens, the fourth positive lens, the fifth positive lens, the aperture, the sixth positive lens, the second negative lens, the third negative lens, the seventh positive lens and the eighth positive lens in sequence to reach the image side of the microscope objective.

[0014] Further, in some embodiments of the present invention, the radii of the first surface and the second surface of the third positive lens are -19.14 mm and 35.45 mm, respectively. The thickness of the third positive lens is 9.60 mm. The radii of the first surface and the second surface of the fourth positive lens are -73.44 mm and 23.02 mm, respectively. The thickness of the fourth positive lens is 24.00 mm. The radii of the first surface and the second surface of the fifth positive lens are -303.21 mm and 48.26 mm, respectively. The thickness of the fifth positive lens is 14.32 mm. The aperture of the aperture is 12.95 mm. The radii of the first surface and the second surface of the sixth positive lens are -44.48 mm and 96.10 mm, respectively. The thickness of the sixth positive lens is 29.87 mm. The radii of the first surface and the second surface of the second negative lens are -23.37 mm and -11.53 mm, respectively. The thickness of the second negative lens is 9.81 mm. The radii of the first surface and the second surface of the third negative lens are 14.03 mm and 57.52 mm respectively. The thickness of the third negative lens is 3.91 mm. The radii of the first surface and the second surface of the seventh positive lens are -103.00 mm and 98.29 mm respectively. The thickness of the seventh positive lens is 3.83 mm. The radii of the first surface and the second surface of the eighth positive lens are -58.66 mm and 270.10 mm respectively. The thickness of the eighth positive lens is 6.59 mm.

[0015] Further, in some embodiments of the present invention, the distance between the first surface of the third positive lens and the second surface of the first negative lens is 9.56 mm. The distance between the second surface of the third positive lens and the first surface of the fourth positive lens is 0.05 mm. The distance between the second surface of the fourth positive lens and the first surface of the fifth positive lens is 0.05 mm. The distance between the second surface of the fifth positive lens and the first surface of the aperture is 0.00 mm. The distance between the first surface of the aperture and the first surface of the sixth positive lens is 2.39 mm. The distance between the second surface of the sixth positive lens and the first surface of the second negative lens is 0.09 mm. The distance between the second surface of the second negative lens and the first surface of the third negative lens is 9.81 mm. The distance between the second surface of the third negative lens and the first surface of the seventh positive lens is 0.09 mm. The distance between the second surface of the seventh positive lens and the first surface of the eighth positive lens is 0.49 mm.

[0016] In addition, the above-mentioned semiconductor device defect detection device provided according to the second aspect of the present invention includes the above-mentioned far ultraviolet-blue light band microscope objective lens provided by the first aspect of the present invention. The object side of the microscope objective lens in the far ultraviolet-blue light band faces the semiconductor device to be detected. The light source is used to provide illumination light to the semiconductor device. The illumination light is located in the 255nm to 450nm band. The image acquisition module is aligned with the image side of the microscope objective lens. The controller is configured to: control the image acquisition module to capture a microscopic image of the semiconductor device via the microscope objective lens; and perform defect detection on the semiconductor device based on the microscopic image.

[0017] In addition, the above-mentioned semiconductor device defect detection method provided according to the third aspect of the present invention comprises the following steps: providing illumination light to the semiconductor device to be detected. The illumination light is in the 255nm to 450nm band; controlling the image acquisition module to collect a microscopic image of the semiconductor device via a microscope objective lens in the far ultraviolet-blue light band as provided in the first aspect of the present invention; and performing defect detection on the semiconductor device according to the microscopic image. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0019] Figure 1 A schematic diagram of the optical path of a microscope objective lens in the far ultraviolet-blue light band provided according to some embodiments of the present invention is shown.

[0020] Figure 2 A graph showing a modulation transfer function of an objective lens provided according to some embodiments of the present invention is shown.

[0021] Figure 3 A graph showing wavefront error versus field of view provided in accordance with some embodiments of the present invention is shown.

[0022] Figure 4 A graph illustrating optical distortion provided according to some embodiments of the present invention is shown.

[0023] Figure 5 A schematic flow chart of a method for detecting defects in a semiconductor device provided according to some embodiments of the present invention is shown. DETAILED DESCRIPTION

[0024] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0025] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0026] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0027] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0028] As mentioned above, in the detection system based on optical microscopy, the microscope objective is the most critical component, which directly affects the detection resolution and detection speed. Therefore, designing a high-quality microscope objective to further improve its detection resolution and detection speed is of great significance for the optical microscopy detection system. The existing patent CN116338924A discloses a microscope imaging system with a large field of view and a high numerical aperture that realizes the near-ultraviolet-blue light band (350-550nm). However, the microscopic imaging system has a low resolution in the far ultraviolet band (for example: 255-450nm) and cannot detect semiconductor defects of lower sizes, and thus cannot meet the process requirements of semiconductor defect detection in the corresponding band.

[0029] In order to overcome the above-mentioned defects of the prior art, the present invention provides a microscope objective lens in the far ultraviolet-blue light band, a semiconductor device defect detection device and a semiconductor device defect detection method, which can achieve the balance of microscope objective aberrations through three groups of lenses, and realize large field of view and high numerical aperture microscope imaging in the far ultraviolet-blue light band to meet the process requirements of semiconductor defect detection based on the far ultraviolet band.

[0030] In some non-limiting embodiments, the above-mentioned semiconductor device defect detection device provided in the second aspect of the present invention includes a microscope objective lens, a light source and an image acquisition module in the far ultraviolet-blue light band as provided in the first aspect of the present invention. Here, the object side of the microscope objective lens in the far ultraviolet-blue light band faces the semiconductor device to be detected. The light source is used to provide illumination light to the semiconductor device. The illumination light is located in the far ultraviolet-blue light band of 255nm to 450nm, and specifically includes the far ultraviolet band of 255nm to 350nm. The image acquisition module is aligned with the image side of the microscope objective lens.

[0031] Please refer to further Figure 1 . Figure 1 A schematic diagram of the optical path of a microscope objective lens in the far ultraviolet-blue light band provided according to some embodiments of the present invention is shown.

[0032] exist Figure 1In the illustrated embodiment, the microscope objective lens comprises a first lens group 11, a second catadioptric lens group 12 and a third catadioptric lens group 13. Here, the first lens group 11 has a negative first spherical aberration, a positive first coma, a negative first axial chromatic aberration and a negative first lateral chromatic aberration. The second catadioptric lens group 12 has a negative second spherical aberration, a positive second coma, a negative second axial chromatic aberration and a negative second lateral chromatic aberration. The third catadioptric lens group 13 has a third spherical aberration for compensating the first spherical aberration and the second spherical aberration, a third coma for compensating the first coma and the second coma, a third axial chromatic aberration for compensating the first axial chromatic aberration and the second axial chromatic aberration, and a third lateral chromatic aberration for compensating the first lateral chromatic aberration and the second lateral chromatic aberration.

[0033] Specifically, in Figure 1 In the illustrated embodiment, the first focal length fS1 of the first lens group 11, the second focal length fS2 of the second catadioptric lens group 12, the third focal length fS3 of the third catadioptric lens group 13, and the total focal length fE1 of the microscope objective satisfy the relationship: |fS1 / fS3|<1.5, |fS1 / fS2|<1.5, 1<|fS1 / fE1|<3.

[0034] Further, in Figure 1 In the illustrated embodiment, the third catadioptric lens group 13 includes a first diffuse gold mirror 131 and a second diffuse gold mirror 132 from right to left. Here, the object side light passes through the first diffuse gold mirror 131 to reach the second diffuse gold mirror 132, is reflected by the second diffuse gold mirror 132 and reaches the first diffuse gold mirror 131, is reflected by the first diffuse gold mirror 131, passes through the second diffuse gold mirror 132 and reaches the second catadioptric lens group 12.

[0035] Specifically, the radii of the first surface (e.g., right side) and the second surface (e.g., left side) of the first diffuse gold mirror 131 are 50.04 mm and 86.47 mm, respectively, and the thickness of the first diffuse gold mirror 131 is 10.67 mm. The radii of the first surface and the second surface of the second diffuse gold mirror 132 are 288.26 mm and 126.31 mm, respectively, and the thickness of the second diffuse gold mirror 132 is 14.24 mm. The distance from the second surface of the first diffuse gold mirror 131 to the first surface of the second diffuse gold mirror 132 is 11.62 mm.

[0036] Preferably, the first diffuse gold mirror 131 and the second diffuse gold mirror 132 may have mutually compensating astigmatism, field curvature and / or distortion, so as to independently realize the correction of astigmatism, field curvature and / or distortion inside the third catadioptric lens group 13 .

[0037] In addition, Figure 1In the illustrated embodiment, the second catadioptric lens group 12 includes a third diffuse gold mirror 121, a first positive lens 122, a second positive lens 123, a first negative lens 124, and a reflector 125 in sequence. Here, the light outputted by the third catadioptric lens group 13 first passes through the third diffuse gold mirror 121, the first positive lens 122, the second positive lens 123, and the first negative lens 124 in sequence to reach the reflective surface of the reflector 125, and then passes through the first negative lens 124, the second positive lens 123, and the first positive lens 122 in sequence after being reflected by the reflector 125 to reach the third diffuse gold mirror 121, and then passes through the first positive lens 122, the second positive lens 123, the first negative lens 124, and the light hole at the optical axis of the reflector 125 in sequence after being reflected by the third diffuse gold mirror 121 to reach the first lens group 11.

[0038] Specifically, the radii of the first surface and the second surface of the third diffuse gold mirror 121 are -154.63 mm and -103.74 mm, respectively, and the thickness of the third diffuse gold mirror 121 is 24.59 mm. The radii of the first surface and the second surface of the first positive lens 122 are -47.50 mm and -50.49 mm, respectively, and the thickness of the first positive lens 122 is 6.81 mm. The radii of the first surface and the second surface of the second positive lens 123 are -67.68 mm and -128.80 mm, respectively, and the thickness of the second positive lens 123 is 10.13 mm. The radii of the first surface and the second surface of the first negative lens 124 are 108.51 mm and -225.88 mm, respectively, and the thickness of the first negative lens 124 is 8.05 mm. The radius of the reflecting surface of the reflector 125 is 91.02 mm.

[0039] Here, a positive radius of the optical element indicates from left to right, and a negative radius indicates from right to left.

[0040] In addition, the distance between the first surface of the third diffuse gold mirror 121 and the light exit position of the third folding and reflecting lens group 13, that is, the second surface of the second diffuse gold mirror 132 is 51.02 mm. The distance between the second surface of the third diffuse gold mirror 121 and the first surface of the first positive lens 122 is 0.05 mm. The distance between the second surface of the first positive lens 122 and the first surface of the second positive lens 123 is 5.43 mm. The distance between the second surface of the second positive lens 123 and the first surface of the first negative lens 124 is 10.98 mm. The distance between the second surface of the first negative lens 124 and the reflecting surface of the reflector 125 is 13.31 mm.

[0041] Preferably, the third diffuse gold mirror 121, the first positive lens 122, the second positive lens 123, the first negative lens 124 and the reflector 125 can have mutually compensating astigmatism, field curvature and / or distortion, so as to independently realize the correction of astigmatism, field curvature and / or distortion inside the second catadioptric lens group 12.

[0042] In addition, Figure 1 In the illustrated embodiment, the first lens group 11 includes a third positive lens 111, a fourth positive lens 112, a fifth positive lens 113, an aperture 114, a sixth positive lens 115, a second negative lens 116, a third negative lens 117, a seventh positive lens 118 and an eighth positive lens 119 in sequence. Here, the third positive lens 111 extends into the light hole at the optical axis of the reflector 125 to obtain the light output by the second catadioptric lens group 12. The light passes through the third positive lens 111, the fourth positive lens 112, the fifth positive lens 113, the aperture 114, the sixth positive lens 115, the second negative lens 116, the third negative lens 117, the seventh positive lens 118 and the eighth positive lens 119 in sequence to reach the image side of the microscope objective.

[0043] Specifically, the radii of the first surface and the second surface of the third positive lens 111 are -19.14 mm and 35.45 mm, respectively, and the thickness of the third positive lens 111 is 9.60 mm. The radii of the first surface and the second surface of the fourth positive lens 112 are -73.44 mm and 23.02 mm, respectively, and the thickness of the fourth positive lens 112 is 24.00 mm. The radii of the first surface and the second surface of the fifth positive lens 113 are -303.21 mm and 48.26 mm, respectively, and the thickness of the fifth positive lens 113 is 14.32 mm. The aperture of the aperture 114 is 12.95 mm. The radii of the first surface and the second surface of the sixth positive lens 115 are -44.48 mm and 96.10 mm, respectively, and the thickness of the sixth positive lens 115 is 29.87 mm. The radii of the first surface and the second surface of the second negative lens 116 are -23.37 mm and -11.53 mm, respectively, and the thickness of the second negative lens 116 is 9.81 mm. The radii of the first surface and the second surface of the third negative lens 117 are 14.03 mm and 57.52 mm, respectively, and the thickness of the third negative lens 117 is 3.91 mm. The radii of the first surface and the second surface of the seventh positive lens 118 are -103.00 mm and 98.29 mm, respectively, and the thickness of the seventh positive lens 118 is 3.83 mm. The radii of the first surface and the second surface of the eighth positive lens 119 are -58.66 mm and 270.10 mm, respectively, and the thickness of the eighth positive lens 119 is 6.59 mm.

[0044] Here, a positive radius of the optical element indicates from left to right, and a negative radius indicates from right to left.

[0045] In addition, the spacing between the first surface of the third positive lens 111 and the second surface of the first negative lens 124 is 9.56 mm. The spacing between the second surface of the third positive lens 111 and the first surface of the fourth positive lens 112 is 0.05 mm. The spacing between the second surface of the fourth positive lens 112 and the first surface of the fifth positive lens 113 is 0.05 mm. The spacing between the second surface of the fifth positive lens 113 and the first surface of the aperture 114 is 0.00 mm. The spacing between the first surface of the aperture 114 and the first surface of the sixth positive lens 115 is 2.39 mm.

[0046] The distance between the second surface of the sixth positive lens 115 and the first surface of the second negative lens 116 is 0.09 mm.

[0047] The distance between the second surface of the second negative lens 116 and the first surface of the third negative lens 117 is 9.81 mm.

[0048] The distance between the second surface of the third negative lens 117 and the first surface of the seventh positive lens 118 is 0.09 mm.

[0049] The distance between the second surface of the seventh positive lens 118 and the first surface of the eighth positive lens 119 is 0.49 mm.

[0050] Preferably, the third positive lens 111, the fourth positive lens 112, the fifth positive lens 113, the aperture 114, the sixth positive lens 115, the second negative lens 116, the third negative lens 117, the seventh positive lens 118 and the eighth positive lens 119 can have mutually compensating astigmatism, field curvature and / or distortion, so as to independently realize the correction of astigmatism, field curvature and / or distortion within the first lens group 11.

[0051] Please refer to Figure 2 to Figure 4 . Figure 2 A graph showing a modulation transfer function of an objective lens provided according to some embodiments of the present invention is shown. Figure 3 A graph showing wavefront error versus field of view provided in accordance with some embodiments of the present invention is shown. Figure 4 A graph illustrating optical distortion provided according to some embodiments of the present invention is shown.

[0052] like Figure 2 to Figure 4 As shown, the above-mentioned microscope objective lens in the far ultraviolet-blue light band provided by the first aspect of the present invention has good optical performance in the far ultraviolet-blue light band.

[0053] Specifically, if Figure 2 As shown, the modulation transfer function of the microscope objective lens provided by the first aspect of the present invention is close to the diffraction limit, and the imaging quality is high. Figure 3As shown in FIG. 1 , the root mean square error (RMS) of the wavefront error of the microscope objective at 255 nm, 260 nm, 365 nm, 436 nm and 450 nm is less than the diffraction limit. Figure 4 As shown, the maximum optical distortion of the microscope objective is less than 0.03%, and the imaging distortion is small.

[0054] In addition, in some embodiments, the microscope objective lens provided in the first aspect of the present invention has an object field of view of 1 mm in the far ultraviolet-blue light band and a numerical aperture NA of 0.9, thereby achieving microscopic imaging with a large field of view and a high numerical aperture.

[0055] In addition, in some preferred embodiments, the semiconductor device defect detection device provided in the second aspect of the present invention further includes a memory and a controller. The memory stores computer instructions. The controller is connected to the memory and is configured to execute the computer instructions stored in the memory to implement the semiconductor measurement method provided in the third aspect of the present invention.

[0056] The working principle of the above-mentioned semiconductor device defect detection device will be described below in conjunction with some embodiments of the semiconductor device defect detection method. Those skilled in the art will understand that these embodiments of the semiconductor device defect detection method are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than limiting all functions or all working modes of the semiconductor device defect detection device. Similarly, the detection device is also only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the execution subject and execution order of each step in these detection methods.

[0057] Please refer to Figure 5 . Figure 5 A schematic flow chart of a method for detecting defects in a semiconductor device provided according to some embodiments of the present invention is shown.

[0058] like Figure 5 As shown, the controller can first provide illumination light to the semiconductor device to be inspected via a light source. Here, the illumination light is in the wavelength range of 255nm to 450nm.

[0059] Afterwards, the controller may control the image acquisition module to acquire a microscopic image of the semiconductor device via the above-mentioned far ultraviolet-blue light band microscope objective lens provided by the first aspect of the present invention.

[0060] Afterwards, the controller can perform defect detection on the semiconductor device based on the microscopic image.

[0061] In summary, the above-mentioned far ultraviolet-blue light band microscope objective lens, semiconductor device defect detection device and semiconductor device defect detection method provided by the present invention can achieve the balance of microscope objective aberration through three groups of lens groups, and are used to achieve large field of view and high numerical aperture microscope imaging in the far ultraviolet-blue light band to meet the process requirements of semiconductor defect detection based on the far ultraviolet band. Based on the definition formula of Rayleigh diffraction limit resolution: d = 0.6 × λ / NA, by achieving a far ultraviolet-blue light band of 255nm to 450nm, especially a far ultraviolet band of 255nm to 350nm, the present invention can further reduce the resolvable size of the detection system, thereby improving the accuracy of semiconductor defect detection.

[0062] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0063] Although the controller described in the above embodiments can be implemented by a combination of software and hardware. However, it is understood that the controller can also be implemented in software and hardware. For hardware implementation, the controller can be implemented in one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, other electronic devices for performing the above functions, or a selection combination of the above devices. For software implementation, the controller can be implemented by independent software modules such as procedures and functions running on a general-purpose chip, each of which performs one or more functions and operations described herein.

[0064] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A microscope objective lens in the far ultraviolet-blue light band, characterized in that: include: The first lens group has a negative first spherical aberration, a positive first coma, a negative first axial chromatic aberration and a negative first lateral chromatic aberration; The second catadioptric lens group has a negative second spherical aberration, a positive second coma, a negative second axial chromatic aberration, and a negative second lateral chromatic aberration; as well as The third catadioptric lens group has a third spherical aberration for compensating the first spherical aberration and the second spherical aberration, a third coma for compensating the first coma and the second coma, a third axial chromatic aberration for compensating the first axial chromatic aberration and the second axial chromatic aberration, and a third lateral chromatic aberration for compensating the first lateral chromatic aberration and the second lateral chromatic aberration, wherein: The first focal length fS1 of the first lens group, the second focal length fS2 of the second catadioptric lens group, the third focal length fS3 of the third catadioptric lens group, and the total focal length fE1 of the microscope objective satisfy the relationship: |fS1 / fS3|<1.5, |fS1 / fS2|<1.5, 1<|fS1 / fE1|<3.

2. The microscope objective lens according to claim 1, characterized in that The third folding and reflecting lens group includes a first diffuse gold mirror and a second diffuse gold mirror in sequence, wherein the light from the object side passes through the first diffuse gold mirror to reach the second diffuse gold mirror, is reflected by the second diffuse gold mirror and reaches the first diffuse gold mirror, is reflected by the first diffuse gold mirror again, passes through the second diffuse gold mirror and reaches the second folding and reflecting lens group.

3. The microscope objective lens according to claim 2, characterized in that The radii of the first surface and the second surface of the first diffuse gold mirror are 50.04 mm and 86.47 mm respectively, and the thickness of the first diffuse gold mirror is 10.67 mm. The radii of the first surface and the second surface of the second diffuse gold mirror are 288.26 mm and 126.31 mm respectively, and the thickness of the second diffuse gold mirror is 14.24 mm. The distance between the second surface of the first diffuse gold mirror and the first surface of the second diffuse gold mirror is 11.62 mm.

4. The microscope objective lens according to claim 1, characterized in that The second folding and reflecting lens group includes a third diffuse gold mirror, a first positive lens, a second positive lens, a first negative lens and a reflector in sequence, wherein the light output by the third folding and reflecting lens group first passes through the third diffuse gold mirror, the first positive lens, the second positive lens and the first negative lens in sequence to reach the reflecting surface of the reflector, and then passes through the first negative lens, the second positive lens and the first positive lens in sequence after being reflected by the reflector to reach the third diffuse gold mirror, and then passes through the first positive lens, the second positive lens, the first negative lens and the light hole at the optical axis of the reflector in sequence after being reflected by the third diffuse gold mirror to reach the first lens group.

5. The microscope objective lens according to claim 4, characterized in that The radii of the first surface and the second surface of the third diffuse gold mirror are -154.63 mm and -103.74 mm respectively, and the thickness of the third diffuse gold mirror is 24.59 mm. The radii of the first surface and the second surface of the first positive lens are respectively -47.50 mm and -50.49 mm, and the thickness of the first positive lens is 6.81 mm. The radii of the first surface and the second surface of the second positive lens are respectively -67.68 mm and -128.80 mm, and the thickness of the second positive lens is 10.13 mm. The radii of the first surface and the second surface of the first negative lens are 108.51 mm and -225.88 mm respectively, and the thickness of the first negative lens is 8.05 mm. The radius of the reflecting surface of the reflector is 91.02 mm.

6. The microscope objective lens according to claim 5, characterized in that The distance between the first surface of the third diffuse gold mirror and the light-emitting position of the third catadioptric lens group is 51.02 mm. The distance between the second surface of the third diffuse gold mirror and the first surface of the first positive lens is 0.05 mm. The distance between the second surface of the first positive lens and the first surface of the second positive lens is 5.43 mm. The distance between the second surface of the second positive lens and the first surface of the first negative lens is 10.98 mm. The distance between the second surface of the first negative lens and the reflecting surface of the reflecting mirror is 13.31 mm.

7. The microscope objective lens according to claim 4, characterized in that The first lens group includes a third positive lens, a fourth positive lens, a fifth positive lens, an aperture, a sixth positive lens, a second negative lens, a third negative lens, a seventh positive lens and an eighth positive lens in sequence, wherein the third positive lens extends into the light-through hole at the optical axis of the reflector to obtain the light output by the second catadioptric lens group, and the light passes through the third positive lens, the fourth positive lens, the fifth positive lens, the aperture, the sixth positive lens, the second negative lens, the third negative lens, the seventh positive lens and the eighth positive lens in sequence to reach the image side of the microscope objective.

8. The microscope objective lens according to claim 7, characterized in that The radii of the first surface and the second surface of the third positive lens are respectively -19.14 mm and 35.45 mm, and the thickness of the third positive lens is 9.60 mm. The radii of the first surface and the second surface of the fourth positive lens are respectively -73.44 mm and 23.02 mm, and the thickness of the fourth positive lens is 24.00 mm. The radii of the first surface and the second surface of the fifth positive lens are respectively -303.21 mm and 48.26 mm, and the thickness of the fifth positive lens is 14.32 mm. The aperture of the aperture is 12.95 mm. The radii of the first surface and the second surface of the sixth positive lens are respectively -44.48 mm and 96.10 mm, and the thickness of the sixth positive lens is 29.87 mm. The radii of the first surface and the second surface of the second negative lens are -23.37 mm and -11.53 mm respectively, and the thickness of the second negative lens is 9.81 mm. The radii of the first surface and the second surface of the third negative lens are 14.03 mm and 57.52 mm respectively, and the thickness of the third negative lens is 3.91 mm. The radii of the first surface and the second surface of the seventh positive lens are respectively -103.00 mm and 98.29 mm, and the thickness of the seventh positive lens is 3.83 mm. The radii of the first surface and the second surface of the eighth positive lens are respectively -58.66 mm and 270.10 mm, and the thickness of the eighth positive lens is 6.59 mm.

9. The microscope objective lens according to claim 8, characterized in that The distance between the first surface of the third positive lens and the second surface of the first negative lens is 9.56 mm. The distance between the second surface of the third positive lens and the first surface of the fourth positive lens is 0.05 mm. The distance between the second surface of the fourth positive lens and the first surface of the fifth positive lens is 0.05 mm. The distance between the second surface of the fifth positive lens and the first surface of the aperture is 0.00 mm. The distance between the first surface of the aperture and the first surface of the sixth positive lens is 2.39 mm. The distance between the second surface of the sixth positive lens and the first surface of the second negative lens is 0.09 mm. The distance between the second surface of the second negative lens and the first surface of the third negative lens is 9.81 mm. The distance between the second surface of the third negative lens and the first surface of the seventh positive lens is 0.09 mm. The distance between the second surface of the seventh positive lens and the first surface of the eighth positive lens is 0.49 mm.

10. A semiconductor device defect detection device, characterized in that: include: The far ultraviolet-blue light band microscope objective lens as claimed in any one of claims 1 to 9, wherein the object side faces the semiconductor device to be inspected; A light source, used to provide illumination light to the semiconductor device, wherein the illumination light is in the wavelength range of 255nm to 450nm; An image acquisition module, aligned with the image side of the microscope objective lens; as well as The controller is configured to: control the image acquisition module to acquire a microscopic image of the semiconductor device via the microscope objective lens; and perform defect detection on the semiconductor device according to the microscopic image.

11. A method for detecting defects in a semiconductor device, characterized in that: The following steps are involved: Providing illumination light to the semiconductor device to be inspected, wherein the illumination light is in the wavelength range of 255nm to 450nm; Controlling the image acquisition module to acquire a microscopic image of the semiconductor device via the microscope objective lens of the far ultraviolet-blue light band according to any one of claims 1 to 9; and Defect detection is performed on the semiconductor device according to the microscopic image.

Images