Lithography method, article manufacturing method, information processing method, computer program product, and information processing apparatus

Abstract

The invention relates to a lithography method, an article manufacturing method, an information processing method, a computer program product, and an information processing apparatus. There is provided a lithographic method of forming a plurality of layers on a substrate, the plurality of layers including a first layer, a second layer, and a third layer, the first layer including a first pattern, the second layer including a second pattern. The method includes detecting relative position information indicating a relative position between the first pattern and the second pattern in patterning aligning the substrate and an original plate for the third layer. The method also includes collecting the relative position information obtained in the detection.

Description

Technical Field

[0001] The present invention relates to a photolithography method, an article manufacturing method, an information processing method, a computer program product, and an information processing device. Background Art

[0002] With the miniaturization and high integration of equipment in recent years, the demand for improved overlay accuracy is increasing. In a lithography device such as an exposure device, alignment between a substrate and an original is performed using an alignment mark provided in a shot area of ​​the substrate, and the accuracy of the alignment can appear in the overlay accuracy. Japanese Patent No. 5194800 describes that in a system including an exposure device and a measuring device, an overlay error between a first pattern on an object and a second pattern on the first pattern is actually measured by a measuring device, and an optimization step is performed based on the actual measurement result. The optimization step includes a first sub-step of detecting an abnormality in the overlay accuracy, and a second sub-step of optimizing the processing conditions based on the correlation between the actual measured value of the overlay error and the processing conditions of the alignment process if the abnormality is detected.

[0003] Generally, the overlay error can be measured using an overlay measurement device after a pattern is formed on a substrate using a photolithography apparatus. Here, measuring the overlay error in all substrates is advantageous in improving overlay accuracy, but disadvantageous from a cost point of view. On the other hand, measuring the overlay error in only sampled substrates is advantageous from a cost point of view, but disadvantageous in improving overlay accuracy. Summary of the invention

[0004] The present invention provides a technique that is advantageous in improving overlay accuracy while suppressing costs.

[0005] A first aspect of the present invention provides a photolithography method for forming a plurality of layers on a substrate, the plurality of layers comprising a first layer, a second layer, and a third layer, the first layer comprising a first pattern, the second layer comprising a second pattern. The method may include: in aligning the substrate and the original plate for patterning of the third layer, detecting relative position information indicating a relative position between the first pattern and the second pattern; and collecting the relative position information obtained in the detection.

[0006] A second aspect of the present invention provides a photolithography method for forming multiple layers on a substrate, the multiple layers including a first layer, a second layer, and a third layer, the first layer including a first pattern, the second layer including a second pattern, the photolithography method including: in aligning the substrate and the original for composition of the third layer, detecting the relative position between the first pattern and the second pattern; and based on the result obtained in the detection, adjusting at least one of the photolithography device used for composition of the first layer and the photolithography device used for composition of the second layer.

[0007] A third aspect of the present invention provides an article manufacturing method, comprising: forming a plurality of layers by a photolithography method as defined in one of the first and second aspects; and processing a substrate having undergone the formation, thereby obtaining an article.

[0008] A fourth aspect of the present invention provides an information processing method for processing information obtained in a photolithography method for forming multiple layers on a substrate, the multiple layers including a first layer, a second layer, and a third layer, the first layer including a first pattern, the second layer including a second pattern, the information processing method comprising: based on an image obtained by capturing the first pattern and the second pattern in aligning the substrate and the original for the composition of the third layer, detecting relative position information indicating the relative position between the first pattern and the second pattern; and collecting the information obtained in the detection.

[0009] A fifth aspect of the present invention provides an information processing method for processing information obtained in a photolithography method for forming multiple layers on a substrate, the multiple layers including a first layer, a second layer, and a third layer, the first layer including a first pattern, the second layer including a second pattern, the information processing method including: based on an image obtained by capturing the first pattern and the second pattern in aligning the substrate and the original for the composition of the third layer, detecting the position of the first pattern and the position of the second pattern; and based on the result obtained in the detection, generating adjustment information for adjusting at least one of the photolithography device for the composition of the first layer and the photolithography device for the composition of the second layer.

[0010] A sixth aspect of the present invention provides a computer program product comprising instructions which, when executed by a processor, perform an information processing method as defined in one of the fourth and fifth aspects.

[0011] The seventh aspect of the present invention provides an information processing device for processing information obtained in a photolithography method for forming multiple layers on a substrate, the multiple layers including a first layer, a second layer, and a third layer, the first layer including a first pattern, the second layer including a second pattern, wherein the device is configured to: detect relative position information indicating the relative position between the first pattern and the second pattern based on an image obtained by capturing the first pattern and the second pattern in aligning the substrate and the original for the composition of the third layer; and collect the information obtained in the detection.

[0012] Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1A is a diagram showing an example of a configuration of an exposure apparatus according to an embodiment;

[0014] Figure 1B is a diagram showing an example of a configuration of a position measurement device;

[0015] Figure 2A and Figure 2B is a diagram illustrating an array of a plurality of shot regions of a substrate;

[0016] Figure 3A is a plan view showing an example of the configuration of markings that may be provided in a shot area;

[0017] Figure 3B is a cross-sectional view showing an example of the configuration of a marking that may be provided in a shot area;

[0018] Figure 4 is a flow chart illustrating a photolithography method according to a first embodiment;

[0019] Figure 5 is a diagram showing a first example of the operation of a photolithography method;

[0020] Figure 6 is a diagram showing a second example of the operation of the photolithography method;

[0021] Figure 7 is a diagram showing a third example of the operation of the photolithography method;

[0022] Figure 8 is a flow chart illustrating a photolithography method according to a second embodiment;

[0023] Fig. 9 is a flowchart illustrating a process of a photolithography method for forming a plurality of layers on a substrate according to a second embodiment;

[0024] FIG. 10A to FIG. 10Cis a diagram for explaining a process of detecting the position of a mark based on the positions of a first pattern and a second pattern forming the mark; and

[0025] Fig.11 is a diagram showing an application example. DETAILED DESCRIPTION

[0026] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments are not intended to limit the scope of the claimed invention. A plurality of features are described in the embodiments, but are not limited to the invention requiring all such features, and a plurality of such features may be appropriately combined. In addition, in the accompanying drawings, the same reference numerals are given to the same or similar configurations, and redundant descriptions thereof are omitted.

[0027] (First embodiment)

[0028] Figure 1A The configuration of the exposure device 200 according to the embodiment is shown. The exposure device 200 is an example of a photolithography device that transfers the pattern of the original plate 31 to the substrate 83 in the method of manufacturing an article or device such as a semiconductor element or a liquid crystal display element. The photolithography device may be, for example, an imprint device or another pattern forming device such as an electron beam lithography device. The exposure device 200 projects the pattern of the original plate 31 onto the substrate 83 to which the photoresist is applied, thereby transferring the pattern of the original plate 31 as a latent image to the photoresist.

[0029] The exposure device 200 used as a photolithography device can be used to pattern at least one of the multiple layers in a photolithography method for forming multiple layers on a substrate 83. The multiple layers may include, for example, a first layer including a first pattern, a second layer including a second pattern, and a third layer. In the example, the exposure device 200 is configured to transfer the pattern of the original plate 31 to the substrate 83 having a first layer including a first pattern, a second layer including a second pattern, and a third layer. The exposure device 200 exposes the photoresist applied to the substrate 83 via the original plate 31, thereby transferring the pattern of the original plate 31 as a latent image to the photoresist. When the photoresist is developed, a resist pattern is formed. The bottom layer (for example, the third layer) is etched using the resist pattern, thereby forming a pattern according to the resist pattern on the bottom layer.

[0030] In this embodiment, the exposure device 200 adopts the step-and-scan method, but another exposure method such as the step-and-repeat method may be adopted. Figure 1A As illustrated in FIG. 1 , the exposure device 200 may include an illumination optical system 181, an original plate stage RS holding an original plate 31, a projection optical system 32, a substrate stage WS holding a substrate 83, a position measuring device 120, and a controller CU. The controller CU may be connected to an individual information processing device PU, and also to a shared information processing device IPE.

[0031] The illumination optical system 181 is an optical system that illuminates the original plate 31 using light from the light source unit 180. The light source unit 180 includes, for example, a laser. The laser may be an ArF excimer laser having a wavelength of about 193 nm or a KrF excimer laser having a wavelength of about 248 nm, but the type of light source is not limited to the excimer laser. For example, the light source unit 180 may use an F2 laser having a wavelength of about 157 nm or an extreme ultraviolet (EUV) having a wavelength of 20 nm or less as a light source.

[0032] The illumination optical system 181 may be configured to shape the light from the light source unit 180 into slit light having a predetermined shape suitable for exposure and illuminate the original plate 31 with the slit light. The illumination optical system 181 has a function of uniformly illuminating the original plate 31 and a polarized illumination function. The illumination optical system 181 includes, for example, a lens, a reflector, an optical integrator, and a diaphragm, and is formed by sequentially arranging a condenser lens, a fly-eye lens, an aperture diaphragm, a condenser lens, a slit, and an imaging optical system.

[0033] The original plate 31 is made of, for example, quartz. A pattern (for example, a circuit pattern) to be transferred to the substrate 83 is formed on the original plate 31. The original plate stage RS holds the original plate 31 via an original plate chuck (not shown). The original plate stage RS is driven by an original plate driving mechanism (not shown). The original plate driving mechanism includes a linear motor, etc., and can move the original plate 31 held by the original plate stage RS by driving the original plate stage RS in the X-axis direction, the Y-axis direction, the Z-axis direction, and the rotation direction around each axis. Note that the position of the original plate 31 is measured by an original plate position measuring unit (not shown) of the light oblique incidence system, and the position of the original plate 31 can be controlled based on the measurement result.

[0034] The projection optical system 32 has a function of imaging the light from the object plane (master 31) in the image plane (substrate 83). The projection optical system 32 projects the light (diffracted light) that has passed through the pattern of the master 31 onto the substrate 83, thereby transferring the pattern of the master 31 to the photoresist on the substrate 83. As the projection optical system 32, an optical system formed by a plurality of lens elements, an optical system including a plurality of lens elements and at least one concave mirror (reflective refractive optical system), an optical system including a plurality of lens elements and at least one diffractive optical element (such as a kinoform), or the like is used.

[0035] The substrate 83 is a processing target object to which the pattern of the original plate 31 is transferred. The substrate 83 may be, for example, a wafer, a liquid crystal substrate, or another member. The substrate stage WS holds the substrate 83 via a substrate chuck (not shown), and is driven by a substrate driving mechanism (not shown). The substrate driving mechanism includes a linear motor, etc., and can move the substrate 83 held by the substrate stage WS by driving the substrate stage WS in the X-axis direction, the Y-axis direction, the Z-axis direction, and the rotation direction around each axis. In addition, a reference plate 39 is provided on the substrate stage WS.

[0036] The position of the reticule stage RS and the position of the substrate stage WS are monitored by, for example, a 6-axis interferometer IF or the like, and the reticule stage RS and the substrate stage WS can be driven at a constant speed ratio under the control of the controller CU.

[0037] The controller CU is formed of a computer (information processing device) including a CPU and a memory, and operates the exposure device 200 by comprehensively controlling the respective units of the exposure device 200 according to a program stored in a storage unit, for example. The controller CU controls, for example, an exposure process of transferring a pattern of the original plate 31 to the substrate 83 by exposing the substrate 83 via the original plate 31. In addition, the controller CU can perform a measurement process using the position measurement device 120 and a correction process (calculation process) of correcting a measurement value obtained by the measurement process. That is, the controller CU can be used as a part of the position measurement device 120, that is, all or part of a processor of the position measurement device 120.

[0038] Figure 1B An example of a configuration of a position measurement device 120 is shown. The position measurement device 120 may be referred to as an alignment scope. The position measurement device 120 may include an illumination system that illuminates the substrate 83, an image sensor 75, and an imaging system that images light from the mark 72 of the substrate 83 onto the image sensor 75. Figure 1B In the example shown in , the position measurement device 120 includes components shared by the illumination system and the imaging system.

[0039] First, the illumination system will be described. Light from the light source 61 is guided to the illumination aperture stop 64 via the illumination optical systems 62 and 63. The light that has passed through the illumination aperture stop 64 is guided to the polarization beam splitter 68 via the illumination optical system 65, the reflector 66, and the illumination optical system 67. The polarization beam splitter 68 transmits P polarized light parallel to the X direction and reflects S polarized light parallel to the Y direction. The P polarized light transmitted through the polarization beam splitter 68 passes through the aperture stop 69, and is then converted into circularly polarized light by the λ / 4 plate 70, thereby performing Koehler illumination on the mark 72 formed on the substrate 83 via the objective optical system 71.

[0040] The lighting system may include a light quantity adjuster (not shown) and / or a wavelength adjuster (not shown). For example, the light quantity adjuster is configured to arrange an ND filter selected from a plurality of ND filters having different transmittances in the optical path from the light source 61, thereby enabling adjustment of the intensity of the light of the lighting substrate 83. The wavelength adjuster is configured to arrange a plurality of wavelength filters that transmit light beams having different wavelength characteristics in the optical path from the light source 61, thereby enabling adjustment of the wavelength of the light of the lighting substrate 83.

[0041] The imaging system will be described below. Light reflected, diffracted, and scattered by the mark 72 on the substrate 83 passes through the objective optical system 71 and the λ / 4 plate 70 and is guided to the aperture stop 69. The polarization state of the light from the mark 72 is a circular polarization opposite to the circular polarization of the light illuminating the mark 72. Therefore, if the polarization state of the light illuminating the mark 72 is clockwise circular polarization, the polarization state of the light from the mark 72 is counterclockwise circular polarization. The light converted from circular polarization to S polarization by the λ / 4 plate 70 passes through the aperture stop 69, is reflected by the polarization beam splitter 68, and is guided to the image sensor 75 via the imaging optical system 74.

[0042] As described above, in the position measuring device 120, the polarization beam splitter 68 separates the optical path of the light illuminating the substrate 83 and the optical path of the light from the substrate 83, and forms an image of the mark 72 on the substrate 83 in the image sensor 75. Based on the signal waveform obtained by detecting the image of the mark 72, the controller CU can determine or acquire the position of the mark 72 in the coordinate system of the position measuring device 120. The intensity of the signal waveform from the mark 72 can be adjusted by, for example, a light amount adjuster (ND filter) provided in the illumination system of the position measuring device 120, output control of the light source 61, and control of the accumulation time of the image sensor 75. Based on the position of the substrate stage WS obtained using the laser interferometer IF and the position of the mark 72 in the coordinate system of the position measuring device 120, the controller CU can determine and acquire the position of the mark 72 in the coordinate system of the substrate stage WS.

[0043] In the imaging system of the position measurement device 120, a detection aperture stop may be arranged between the polarization beam splitter 68 and the image sensor 75. Furthermore, it may be possible to adjust the numerical aperture of each of the illumination aperture stop 64 and the detection aperture stop, thereby adjusting the coefficient representing the ratio of the numerical aperture of the illumination system and the numerical aperture of the imaging system. An example of a mechanism for adjusting the numerical aperture is a configuration in which an aperture stop arbitrarily selected from a plurality of aperture stops can be arranged in the optical path.

[0044] The position measurement device 120 may be configured to detect light (reflected light and scattered light) from the mark 72 or each of the first pattern P1 and the second pattern P2 forming the mark 72 by the image sensor 75. As a method of detecting light from the mark 72, for example, dark field detection may be employed in which the aperture stop 64 and the detection aperture stop (numerical aperture of the illumination system and the imaging system) are controlled to block the 0th order diffracted light from the mark 72 and detect only higher order diffracted light and scattered light.

[0045] Figure 2A and Figure 2B Each shows an example of an array of multiple shot areas of the substrate 83. Figure 2A In the example shown in , among the plurality of shot areas of the substrate 83, the shot areas for which the measurement process (alignment measurement) is performed (i.e., the sample shot areas) are shot areas 151 to 154. In the peripheral portion of the shot areas, scribing lines (not shown) are arranged. If each shot area includes a plurality of chip areas (areas to be chipped by cutting), scribing lines (not shown) are arranged between adjacent chip areas. A mark (not shown) is arranged on each scribing line. Figure 2B An example of an increase in the number of sample shot areas is shown. A marker is provided in each shot area (including the sample shot area).

[0046] Figure 3A and Figure 3B 1 and 2 are plan views and cross-sectional views respectively illustrating a mark 72 provided in each shot area (including a sample shot area). The mark 72 may include a first pattern P1 in a first layer 73L arranged on a base 73B of a substrate 83 and a second pattern P2 arranged in a second layer 73U different from the first layer 73L. In this example, the second layer 73U is arranged on the first layer 73L. The first pattern P1 and the second pattern P2 may be arranged to be simultaneously accommodated in the field of view of a position measuring device 120 (alignment observer). The mark 72 serves as an alignment mark configured to align a master plate 31 for patterning a third layer 73T on the second layer 73U. The target of alignment of the master plate 31 for patterning the third layer 73T may be the first layer 73L or the second layer 73U, or may be the first layer 73L and the second layer 73U. In Figure 3A and Figure 3B In the example shown in , the first pattern P1 arranged in the first layer 73L includes, for example, four pattern elements (marking elements) P1a, P1b, P1c and P1d, and the second pattern P2 arranged in the second layer 73U includes four pattern elements (marking elements) P2a, P2b, P2c and P2d.

[0047] Only a part of the mark 72 may be used as an alignment mark for alignment of the original plate 31 for patterning the third layer 73T. For example, only the first pattern P1 of the mark 72 may be used as an alignment mark for alignment of the original plate 31 for patterning the third layer 73T, and in this case, the target of alignment of the original plate 31 is the first layer 73L. Alternatively, only the second pattern P2 of the mark 72 may be used as an alignment mark for alignment of the original plate 31 for patterning the third layer 73T, and in this case, the target of alignment of the original plate 31 is the second layer 73U.

[0048] Alternatively, both the first pattern P1 and the second pattern P2 may be used as alignment marks for alignment of the original plate 31 for patterning the third layer 73T. In this case, the target of alignment of the original plate 31 includes the first layer 73L and the second layer 73U.

[0049] The mark 72 is also used as an overlay measurement mark configured to measure an overlay error. For example, in the alignment step of aligning the substrate 83 and the original plate 31 for the composition of the third layer 73T, the mark 72 can be used to detect the relative position between the first pattern P1 and the second pattern P2. Alternatively, the detection step can be performed after the alignment step based on an image obtained by capturing the image of the first pattern P1 and the second pattern P2 in the alignment step of aligning the substrate 83 and the original plate 31 for the composition of the third layer 73T. The detection step can be performed in the exposure device 200 or another device to detect the relative position between the first pattern P1 and the second pattern P2. In this case as well, the process of capturing the image of the overlay measurement mark in an overlay measurement device different from the exposure device after the composition of the third layer is not necessary as in the conventional method. The other device may be a separate information processing device PU as a dedicated information processing device connected to the exposure device 200, or a shared information processing device IPE as an information processing device shared by a plurality of exposure devices 200. Note that the separate information processing device PU can be understood as a constituent element of the exposure device 200.

[0050] Using the mark 72 not only as an alignment mark but also as an overlay measurement mark is advantageous in reducing an overcrowded state of marks on a scribe line or making the width of a scribe line small and improving yield.

[0051] In the mark 72, the first pattern P1 may include a plurality of first portions 301, and the second pattern P2 may include a plurality of second portions 302. In one viewpoint, the overlay measurement mark may have a feature that the second pattern P2 is contained in a rectangular area 300 circumscribed to the first pattern P1. In another viewpoint, in the mark 72, at least a portion of at least one of the plurality of second portions 302 may be disposed between at least two first portions 301 of the plurality of first portions 301.

[0052] In the alignment step, the position measurement device 120 may perform position measurement of the mark 72 for alignment of the original plate 31 for at least one of the first layer 73L and the second layer 73U. Also, in the alignment step, the position measurement device 120 may perform a detection step of detecting the relative position between the first pattern P1 and the second pattern P2. Alternatively, the position measurement device 120 may provide an image of the mark 72 captured in the alignment step to another device (e.g., a separate information processing device PU or a shared information processing device IPE) to allow the other device to perform the detection step.

[0053] Figure 4 A photolithography method for performing exposure for patterning of a third layer 73T of a substrate 83 including an unpatterned third layer 73T on patterned first and second layers 73L and 73U (exposure of a photoresist film on the third layer) is illustrated. Step S401 is a registration step. In the registration step, a first pattern P1 and a second pattern P2 whose relative positions should be detected in the detection step (steps S405 and S407) of the alignment step (steps S405 to S410) are registered in the exposure device 200 for patterning of the third layer 73T. The registration step may include a step of registering a mark (first pattern P1 and / or second pattern P2) for alignment between the substrate 83 and the original plate 31 in the alignment step. In the registration step, as the first pattern P1 and the second pattern P2, a mark arranged to be simultaneously accommodated in the field of view of the position measuring device 120 (alignment scope) in the exposure device 200 for patterning of the third layer 73T may be registered. The registration step may be performed by the controller CU, a separate information processing device PU, or a shared information processing device IPE.

[0054] In step S402, the substrate 83 is loaded onto the substrate stage WS of the exposure device 200 under the control of the controller CU. In step S403, calibration is performed under the control of the controller CU. More specifically, based on the designed coordinate position of the reference mark provided on the reference plate 39 on the coordinate system of the substrate stage WS, the substrate stage WS is driven so that the reference mark is located on the optical axis of the position measuring device 120. Next, the positional deviation of the reference mark relative to the optical axis of the position measuring device 120 is measured, and based on the positional deviation, the coordinate system of the substrate stage WS is set again so that the origin of the coordinate system of the substrate stage WS matches the optical axis of the position measuring device 120. Next, based on the designed positional relationship between the optical axis of the position measuring device 120 and the optical axis of the projection optical system 32, the substrate stage WS is driven so that the reference mark is located on the optical axis of the exposure light. Then, the positional deviation of the reference mark relative to the optical axis of the exposure light is measured via the projection optical system 32 through a lens (TTL) measurement system (not shown). Based on the above results, a baseline is determined, which is the interval between the optical axis of the position measuring device 120 and the optical axis of the projection optical system 32.

[0055] In step S404, pre-alignment of the substrate 83 may be performed under the control of the controller CU. The pre-alignment is performed using, for example, a low-magnification scope (not shown), so that the mark 72 can be accommodated in the field of view of the position measurement device 120. In steps S405 to S409, an alignment step (global alignment step) may be performed under the control of the controller CU. More specifically, in step S405, the position measurement device 120 captures an image of the mark 72 in a preset sample shot area among all shot areas of the substrate 83. In step S406, the controller CU may calculate (determine) the position of the mark 72 based on the image of the mark 72 captured in step S405. The position of the mark 72 may be determined based on at least one of the position of the first pattern P1 and the position of the second pattern P2. When the position of the mark 72 is determined based on both the position of the first pattern P1 and the position of the second pattern P2, the position of the mark 72 may be determined based on, for example, not only the position of the first pattern P1 and the position of the second pattern P2, but also preset relative position information. The relative position information may be, for example, information indicating a designed relative position between the first pattern P1 and the second pattern P2.

[0056] Steps S405 and S407 form a detection step in the alignment step. In step S407, the controller CU may calculate (determine) the relative position between the first pattern P1 and the second pattern P2 based on the image of the mark 72 captured in step S405. Step S407 may be performed by the separate information processing device PU or the shared information processing device IPE by transmitting the image of the mark 72 captured in step S405 to the separate information processing device PU or the shared information processing device IPE. In the separate information processing device PU or the shared information processing device IPE, step S407 may be performed at any timing in steps S406 to S413. The separate information processing device PU and the shared information processing device IPE may each be formed by a computer including, for example, a CPU and a memory. Each of the separate information processing device PU and the shared information processing device IPE may operate as a device having a target function by loading a computer program into a memory and operating according to the computer program. Each of the individual information processing device PU and the shared information processing device IPE can be understood as an information processing device that performs an information processing method including step S407 (detection step) based on the image of the marker 72 captured in step S405. The information processing method may further include step S401 (registration step). Moreover, the information processing method may further include step S412 (adjustment step) to be described later.

[0057] In step S408, the controller CU determines whether steps S405 to S407 have been performed on all the plurality of preset sample shot areas. If there is still a sample shot area for which steps S405 to S407 have not been performed, the controller CU performs steps S405 to S407 on the sample shot area.

[0058] In step S409, the controller CU performs global alignment of calculating the arrangement of all shot areas of the substrate 83 based on the position of the mark 72 calculated in step S406 for a plurality of preset sample shot areas. In step S410, the controller CU aligns each shot area of ​​the substrate 83 and the original plate 31 based on the result of the global alignment in step S409, and exposes the shot area (the pattern of the transfer original plate). At this time, the alignment between the substrate 83 (shot area) and the original plate 31 can be performed based on at least one of the position of the first pattern P1 and the position of the second pattern P2. In step S411, the substrate 83 is unloaded under the control of the controller CU. When processing is performed on a batch formed of a plurality of substrates 83 as a unit, steps S402 to S411 can be performed on the plurality of substrates.

[0059] Step S412 may be performed by a separate information processing device PU or a shared information processing device IPE. In step S412, an adjustment step of adjusting at least one of the lithography device for patterning the first layer 73L and the lithography device for patterning the second layer 73U may be performed based on the result obtained in step S407 (detection step). In the adjustment step, simply, adjustment information for adjusting at least one of the lithography device for patterning the first layer 73L and the lithography device for patterning the second layer 73U may be generated based on the result obtained in step S407. The adjustment step may be performed to reduce the overlay error between the first layer 73L, the second layer 73U, and the third layer 73T. In the adjustment step, an offset value may be adjusted, which is used to adjust the patterning operation in at least one of the lithography device for patterning the first layer 73L and the lithography device for patterning the second layer 73U.

[0060] Figure 5 A first example of the operation of the photolithography method including patterning of the first layer, the second layer, and the third layer is schematically shown. In the first example, patterning 551 of the first layer 73L is performed using the first exposure device 200a, patterning 552 of the second layer 73U is performed using the second exposure device 200b, and patterning 553 of the third layer 73T is performed using the third exposure device 200c. Note that suffixes a, b, and c are added to distinguish the exposure devices 200 from each other. Suffixes a, b, and c added to the individual information processing devices PU are also added to distinguish the individual information processing devices PU from each other.

[0061] The transfer conditions of the composition 551 for the first layer 73L can be provided from the first exposure device 200a to the first individual information processing device PUa or the shared information processing device IPE. The transfer conditions of the composition 552 for the second layer 73U can be provided from the second exposure device 200b to the second individual information processing device PUb or the shared information processing device IPE. The third exposure device 200c that performs the transfer of the composition 553 for the third layer 73T can calculate the relative position Δ between the first pattern P1 and the second pattern P2 in the detection step of the alignment step and provide it to the third individual information processing device PUc or the shared information processing device IPE. Alternatively, the third exposure device 200c can provide the image of the mark 72 including the first pattern P1 and the second pattern P2 to the third individual information processing device PUc or the shared information processing device IPE. In this case, the third individual information processing device PUc or the shared information processing device IPE can calculate the relative position Δ between the first pattern P1 and the second pattern P2 based on the image. If the third individual information processing device PUc calculates the relative position Δ, the third individual information processing device PUc may provide the relative position Δ to the shared information processing device IPE.

[0062] Based on the relative position Δ, the shared information processing device IPE can determine an offset value that should be set in at least one of the first exposure device 200a and the second exposure device 200b. The offset value is determined to reduce the overlay error between the first layer 73L, the second layer 73U, and the third layer 73T. When the offset value is set in both the first exposure device 200a and the second exposure device 200b, the offset values ​​set in these may have different values ​​from each other.

[0063] Regarding the offset value, the offset value used to adjust the patterning operation in the lithography apparatus (here, exposure apparatus) can be determined (adjusted) according to, for example, the following equation A.

[0064] Equation A: OFS = Δ × β × α

[0065] Wherein Δ is the relative position between the first pattern P1 and the second pattern P2 , α is the correction magnification, β is the device coefficient, and OFS is the offset value.

[0066] If the offset value OFS exceeds the reference value, the shared information processing device IPE may operate to set the offset value OFS in at least one of the first exposure device 200a and the second exposure device 200b. The device coefficient β may be a variable determined according to, for example, the position of the shot area, the order of the shot areas to be processed on the substrate, or the order of the shot areas to be exposed in the exposure device.

[0067] The offset value OFS may be determined by the third individual information processing device PUc and set by the third individual information processing device PUc in at least one of the first exposure device 200a and the second exposure device 200b.

[0068] Figure 6 A second example of the operation of the photolithography method including patterning of the first layer, the second layer and the third layer is schematically shown. In the second example, patterning 551 of the first layer 73L is performed using the first exposure device 200a, and patterning 552 of the second layer 73U and patterning 553 of the third layer 73T are performed using the second exposure device 200b.

[0069] The transfer conditions of the composition 551 for the first layer 73L can be provided from the first exposure device 200a to the first individual information processing device PUa or the shared information processing device IPE. The transfer conditions of the composition 552 for the second layer 73U can be provided from the second exposure device 200b to the second individual information processing device PUb or the shared information processing device IPE. The second exposure device 200b that performs the transfer of the composition 553 for the third layer 73T can calculate the relative position Δ between the first pattern P1 and the second pattern P2 in the detection step of the alignment step and provide it to the second individual information processing device PUb or the shared information processing device IPE. Alternatively, the second exposure device 200b can provide the image of the mark 72 including the first pattern P1 and the second pattern P2 to the second individual information processing device PUb or the shared information processing device IPE. In this case, the second individual information processing device PUb or the shared information processing device IPE can calculate the relative position Δ between the first pattern P1 and the second pattern P2 based on the image. If the second individual information processing device PUb calculates the relative position Δ, the second individual information processing device PUb may provide the relative position Δ to the shared information processing device IPE.

[0070] Based on the relative position Δ, the shared information processing device IPE can determine an offset value OFS that should be set in at least one of the first exposure device 200a and the second exposure device 200b. The offset value is determined to reduce the overlay error between the first layer 73L, the second layer 73U, and the third layer 73T. When the offset value OFS is set in both the first exposure device 200a and the second exposure device 200b, the offset values ​​OFS set in these may have different values ​​from each other.

[0071] If the offset value OFS exceeds the reference value, the shared information processing device IPE may operate to set the offset value OFS in at least one of the first exposure device 200a and the second exposure device 200b. The offset value OFS may be determined by the second individual information processing device PUb and set by the second individual information processing device PUb in at least one of the first exposure device 200a and the second exposure device 200b.

[0072] Figure 7 A third example of the operation of the photolithography method including patterning of the first layer, the second layer, and the third layer is schematically shown. In the third example, patterning 551 of the first layer 73L and patterning 552 of the second layer 73U are performed using the first exposure device 200a, and patterning 553 of the third layer 73T is performed using the second exposure device 200b.

[0073] The transfer conditions of the composition 551 for the first layer 73L can be provided from the first exposure device 200a to the first individual information processing device PUa or the shared information processing device IPE. The transfer conditions of the composition 552 for the second layer 73U can be provided from the first exposure device 200a to the first individual information processing device PUa or the shared information processing device IPE. The second exposure device 200b that performs the transfer of the composition 553 for the third layer 73T can calculate the relative position Δ between the first pattern P1 and the second pattern P2 in the detection step of the alignment step and provide it to the second individual information processing device PUb or the shared information processing device IPE. Alternatively, the second exposure device 200b can provide the image of the mark 72 including the first pattern P1 and the second pattern P2 to the second individual information processing device PUb or the shared information processing device IPE. In this case, the second individual information processing device PUb or the shared information processing device IPE can calculate the relative position Δ between the first pattern P1 and the second pattern P2 based on the image. If the second individual information processing device PUb calculates the relative position Δ, the second individual information processing device PUb may provide the relative position Δ to the shared information processing device IPE.

[0074] Based on the relative position Δ, the shared information processing device IPE can determine the offset value OFS that should be set in the first exposure device 200a. The offset value is determined to reduce the overlay error between the first layer 73L, the second layer 73U, and the third layer 73T.

[0075] If the offset value OFS exceeds the reference value, the shared information processing device IPE may operate to set the offset value OFS in the first exposure device 200a. The offset value OFS may be determined by the second individual information processing device PUb and set in the first exposure device 200a by the second individual information processing device PUb.

[0076] (Second embodiment)

[0077] A second embodiment will be described below. Figure 1A , Figure 1B , Figure 2A and Figure 2B The exposure device 200, the position measuring device 120, and the example of an array of multiple shot areas of the substrate 83 are described. Figure 3A and Figure 3B An example of the configuration of the marker 72 is shown in FIG.

[0078] As described in the first embodiment, the first pattern P1 and the second pattern P2 can be arranged to be simultaneously contained in the field of view of the position measurement device 120 (alignment observer). The mark 72 serves as an alignment mark configured to align the original plate 31 for patterning the third layer 73T on the second layer 73U. The target of the alignment of the original plate 31 for patterning the third layer 73T may be the first layer 73L or the second layer 73U, or may be the first layer 73L and the second layer 73U. Figure 3A and Figure 3B In the example shown in , the first pattern P1 arranged in the first layer 73L includes, for example, four marking elements P1a, P1b, P1c and P1d, and the second pattern P2 arranged in the second layer 73U includes four marking elements P2a, P2b, P2c and P2d.

[0079] Only a part of the mark 72 may be used as an alignment mark for alignment of the original plate 31 for patterning the third layer 73T. For example, only the first pattern P1 of the mark 72 may be used as an alignment mark for alignment of the original plate 31 for patterning the third layer 73T, and in this case, the target of alignment of the original plate 31 is the first layer 73L. Alternatively, only the second pattern P2 of the mark 72 may be used as an alignment mark for alignment of the original plate 31 for patterning the third layer 73T, and in this case, the target of alignment of the original plate 31 is the second layer 73U.

[0080] Alternatively, both the first pattern P1 and the second pattern P2 may be used as alignment marks for alignment of the original plate 31 for patterning the third layer 73T. In this case, the target of alignment of the original plate 31 includes the first layer 73L and the second layer 73U. Here, between the first pattern P1 and the second pattern P2, there may be a large amount of positional deviation (amount of deviation from the design value) that occurs when the second pattern P2 is formed. Therefore, if the position of the second pattern P2 is used to determine the position of the mark 72, an error will occur. The controller CU may perform a conversion process of converting the position of the second pattern P2 into the position of the second pattern P2 when the second pattern P2 is formed without any positional deviation relative to the first pattern P1. The conversion process may be performed based on relative position information indicating the amount of positional deviation (relative position) between the first pattern P1 and the second pattern P2. Therefore, the second pattern P2 may be used as a part of the mark 72. If there is no relative position information obtained by measurement, then the relative position information determined based on the design information may be used for the conversion process. On the other hand, if the relative position information is obtained by measurement, then the relative position information obtained by measurement may be used for the conversion process.

[0081] Here, let (Bx, By) be the position of the measured second pattern P2, and (Cx, Cy) be the relative position information indicating the relative position (position deviation amount) between the first pattern P1 and the second pattern P2. In this case, the position (Dx, Dy) of the second pattern P2 in the case where the second pattern P2 is formed without position deviation relative to the first pattern P1, that is, the result of the conversion process, can be represented by (Dx, Dy) = (Bx - Cx, By - Cy). Moreover, the position (Ex, Ey) of the mark 72 can be represented by (Ex, Ey) = ((Ax + Dx) / 2, (Ay + Dy) / 2).

[0082] The mark 72 is used as an overlay measurement mark configured to detect relative position information (i.e., measure overlay error). For example, in the alignment step of aligning the substrate 83 and the original plate 31 for patterning of the third layer 73T, the mark 72 can be used in a detection step of detecting relative position information between the first pattern P1 and the second pattern P2. Alternatively, the detection step can be performed after the alignment step based on an image obtained by capturing images of the first pattern P1 and the second pattern P2 in the alignment step of aligning the substrate 83 and the original plate 31 for patterning of the third layer 73T. The detection step can be performed in the exposure device 200 or another device to detect the relative position information between the first pattern P1 and the second pattern P2. In this case as well, the process of capturing the image of the overlay measurement mark in an overlay measurement device different from the exposure device after patterning of the third layer is not necessary as in the conventional method. The other device may be a separate information processing device PU as a dedicated information processing device connected to the exposure device 200, or a shared information processing device IPE as an information processing device shared by a plurality of exposure devices 200. Note that the individual information processing device PU may be understood as a constituent element of the exposure device 200 .

[0083] Using the mark 72 not only as an alignment mark but also as an overlay measurement mark is advantageous in detecting overlay errors while suppressing costs. This is also advantageous in reducing the overcrowding of marks on a scribe line or making the width of a scribe line small and improving yield.

[0084] In the mark 72, the first pattern P1 may include a plurality of first portions 301, and the second pattern P2 may include a plurality of second portions 302. In one viewpoint, the overlay measurement mark may have a feature that the second pattern P2 is contained in a rectangular area 300 circumscribed to the first pattern P1. In another viewpoint, in the mark 72, at least a portion of at least one of the plurality of second portions 302 may be disposed between at least two first portions 301 of the plurality of first portions 301.

[0085] In the alignment step, the position measurement device 120 may perform position measurement of the mark 72 for alignment of the original plate 31 for at least one of the first layer 73L and the second layer 73U. Also, in the alignment step, the position measurement device 120 may perform a detection step of detecting the relative position between the first pattern P1 and the second pattern P2. Alternatively, the position measurement device 120 may provide an image of the mark 72 captured in the alignment step to another device (e.g., a separate information processing device PU or a shared information processing device IPE) to allow the other device to perform the detection step.

[0086] Figure 8 A photolithography method for performing exposure for patterning of a third layer 73T of a substrate 83 including an unpatterned third layer 73T on patterned first and second layers 73L and 73U (exposure of a photoresist film on the third layer) is illustrated. Step S1401 is a registration step. In the registration step, a first pattern P1 and a second pattern P2 whose relative position information should be detected in the detection step (steps S1405 and S1407) of the alignment step (steps S1405 to S1412) are registered in the exposure device 200 for patterning of the third layer 73T. The registration step may include a step of registering a mark (first pattern P1 and / or second pattern P2) for alignment between the substrate 83 and the original plate 31 in the alignment step. In the registration step, as the first pattern P1 and the second pattern P2, a mark arranged to be simultaneously accommodated in the field of view of the position measurement device 120 (alignment scope) in the exposure device 200 for patterning of the third layer 73T may be registered. The registration step may be performed by the controller CU, a separate information processing device PU, or a shared information processing device IPE.

[0087] In step S1402, the substrate 83 is loaded onto the substrate stage WS of the exposure device 200 under the control of the controller CU. In step S1403, calibration is performed under the control of the controller CU. More specifically, based on the designed coordinate position of the reference mark provided on the reference plate 39 on the coordinate system of the substrate stage WS, the substrate stage WS is driven so that the reference mark is located on the optical axis of the position measuring device 120. Next, the positional deviation of the reference mark relative to the optical axis of the position measuring device 120 is measured, and based on the positional deviation, the coordinate system of the substrate stage WS is set again so that the origin of the coordinate system of the substrate stage WS matches the optical axis of the position measuring device 120. Next, based on the designed positional relationship between the optical axis of the position measuring device 120 and the optical axis of the projection optical system 32, the substrate stage WS is driven so that the reference mark is located on the optical axis of the exposure light. Then, the positional deviation of the reference mark relative to the optical axis of the exposure light is measured via the projection optical system 32 by a through-the-lens (TTL) measurement system (not shown). Based on the above results, a base line, which is the interval between the optical axis of the position measuring device 120 and the optical axis of the projection optical system 32 , is determined.

[0088] In step S1404, pre-alignment of the substrate 83 may be performed under the control of the controller CU. The pre-alignment is performed using, for example, an observer (not shown) having a field of view wider than the field of view of the position measuring device 120, so that the mark 72 can be accommodated in the field of view of the position measuring device 120. In steps S1405 to S1412, an alignment step (global alignment step) may be performed under the control of the controller CU. More specifically, in step S1405, the position measuring device 120 captures an image of the mark 72 in a preset sample shot area among all shot areas of the substrate 83. In step S1406, the controller CU may calculate (determine) the position of the mark 72 based on the image of the mark 72 captured in step S1405. The position of the mark 72 may be determined based on at least one of the position of the first pattern P1 and the position of the second pattern P2. When the position of the mark 72 is determined based on both the position of the first pattern P1 and the position of the second pattern P2, the position of the mark 72 may be determined based on, for example, not only the position of the first pattern P1 and the position of the second pattern P2, but also preset relative position information.

[0089] Steps S1405 and S1407 form a detection step in the alignment step. In step S1407, the controller CU may detect relative position information between the first pattern P1 and the second pattern P2 based on the image of the mark 72 captured in step S1405. Step S1407 may be performed by the separate information processing device PU or the shared information processing device IPE by transmitting the image of the mark 72 captured in step S1405 to the separate information processing device PU or the shared information processing device IPE. The separate information processing device PU and the shared information processing device IPE may each be formed by a computer including, for example, a CPU and a memory. Each of the separate information processing device PU and the shared information processing device IPE may operate as a device having a target function by loading a computer program into the memory and operating according to the computer program. Each of the separate information processing device PU and the shared information processing device IPE may be understood as an information processing device that performs an information processing method including step S1407 (detection step) based on the image of the mark 72 captured in step S1405. The information processing method may further include step S1401 (registration step). Furthermore, the information processing method may further include step S1414 (adjustment step) to be described later.

[0090] In step S1408, the controller CU may store the relative position information in a memory (not shown). The memory may be provided in the exposure device 200 (e.g., the controller CU), or may be provided in one of the separate information processing device PU and the shared information processing device IPE. Step S1408 may be understood as a collection step of collecting relative position information. In step S1409, the controller CU may determine the occurrence of an abnormality based on the relative position information collected in step S1408 (collection step). Step S1409 may be understood as a determination step of determining the occurrence of an abnormality. In an example, if the evaluation value of the relative position (overlap error) indicated by the relative position information exceeds a threshold value, it may be determined that an abnormality occurs. For example, if a change such as a standard deviation of the relative position obtained for each of a plurality of sample shot areas exceeds a threshold value, it may be determined that an abnormality occurs. When it is determined that an abnormality occurs, a process for eliminating the abnormality, for example, a process for adjusting an offset value, may be performed.

[0091] In step S1410, the controller CU determines whether steps S1405 to S1409 have been performed on all the plurality of preset sample shot areas. If there is still a sample shot area for which steps S1405 to S1409 have not been performed, the controller CU performs steps S1405 to S1409 on the sample shot area.

[0092] In step S1411, the controller CU performs global alignment of the arrangement of all shot areas of the substrate 83 calculated based on the position of the mark 72 calculated in step S1406 for a plurality of preset sample shot areas. In step S1412, the controller CU aligns each shot area of ​​the substrate 83 and the original plate 31 based on the result of the global alignment in step S1411, and exposes the shot area (the pattern of the transfer original plate). At this time, the alignment between the substrate 83 (shot area) and the original plate 31 can be performed based on at least one of the position of the first pattern P1 and the position of the second pattern P2. In step S1413, the substrate 83 is unloaded under the control of the controller CU. When processing is performed on a batch formed of a plurality of substrates 83 as a unit, steps S1402 to S1413 can be performed on the plurality of substrates.

[0093] Step S1414 may be performed by a separate information processing device PU or a shared information processing device IPE. In step S1414, an adjustment step of adjusting at least one of the lithography device for patterning the first layer 73L and the lithography device for patterning the second layer 73U may be performed based on the relative position information collected in step S1409. In the adjustment step, simply, adjustment information for adjusting at least one of the lithography device for patterning the first layer and the lithography device for patterning the second layer may be generated based on the relative position information collected in step S1409. In this case, the lithography device may be adjusted based on the adjustment information at any timing. The adjustment step may be performed to reduce the overlay error between the first layer 73L, the second layer 73U, and the third layer 73T. In the adjustment step, an offset value may be adjusted, which is used to adjust the patterning operation in at least one of the lithography device for patterning the first layer 73L and the lithography device for patterning the second layer 73U.

[0094] Now refer to FIG. 10A to FIG. 10C The process of detecting the position of the mark 72 based on the position of the first pattern P1 and the position of the second pattern P2 in step S1406 is described. Fig. 10A An optical image of the mark 72 formed on the image capturing area (the field of view of the position measuring device 120) of the image sensor 75 of the position measuring device 120 is illustrated. A two-dimensional image sensor including an image capturing area formed by a plurality of pixels arranged in the X direction and the Y direction may be used as the image sensor 75. Based on the output (captured image) from the image sensor 75, the controller CU may generate a detection signal including waveforms corresponding to the first pattern P1 and the second pattern P2.

[0095] Fig. 10BThe detection signal SW1 generated when the evaluation area for evaluating the position of the first pattern P1 in the X direction is set for a captured image obtained by capturing the mark 72 by the image sensor 75 is illustrated. Fig. 10C The detection signal SW2 of the second pattern P2 generated when an evaluation area for evaluating the position of the second pattern P2 in the X direction is set for a captured image obtained by capturing the mark 72 by the image sensor 75 is illustrated.

[0096] Based on the designed position of the mark 72, the controller CU can set the evaluation areas W1L and W1R to include the first parts P1XL and P1XR, respectively, which are part of the first pattern P1. Based on the designed position of the mark 72, the controller CU can set the evaluation areas W2L and W2R to include the second parts P2XL and P2XR, respectively, which are part of the second pattern P2. Each of the detection signals SW1 and SW2 can be generated by integrating the signal intensities of the respective pixels in the set evaluation areas, for example, in the Y direction. Note that for the integration of the signal intensities of the respective pixels of the image sensor 75, it is preferable to set the number of pixels to be integrated based on the size information of the mark 72.

[0097] like Fig. 10B As illustrated in FIG. 1 , the waveform S1L included in the detection signal SW1 corresponds to the signal strength of the first portion P1XL of the first pattern P1, and the waveform S1R corresponds to the signal strength of the first portion P1XR of the first pattern P1. The controller CU obtains a measurement value X1L indicating the center position of the first portion P1XL from the waveform S1L, and obtains a measurement value X1R indicating the center position of the first portion P1XR from the waveform S1R. Based on the measurement values ​​X1L and X1R, the controller CU determines information indicating the position of the first pattern P1 in the X direction. Fig. 10C is a diagram showing the detection signal SW2 of the second pattern P2. The controller CU can determine information indicating the position of the second pattern P2 in the X direction through the same measurement process. Regarding the Y direction, the same measurement process is also performed on the first pattern P1 and the second pattern P2, and the controller CU can determine information indicating the position of the first pattern P1 and the second pattern P2 in the Y direction.

[0098] Fig. 9 The process of the photolithography method for forming a plurality of layers on a substrate according to the second embodiment is exemplarily shown. In step S501, a first layer 73L is formed on a substrate 83. In step S502, the first layer 73L is patterned by a first patterning step including a first pattern transfer step performed by the exposure device 200. At this time, a first pattern P1 is formed in the first layer 73L together with a device pattern of the first layer.

[0099] In step S503, the second layer 73U is formed on the first layer 73L of the substrate 83. In step S504, the second layer 73U is patterned by a second patterning step including a second pattern transfer step performed by the exposure device 200. At this time, the second pattern P2 is formed in the second layer 73U together with the device pattern of the second layer.

[0100] In step S505, the third layer 73T is formed on the second layer 73U of the substrate 83. In step S506, the third layer 73T is patterned by a third patterning step including a third pattern transfer step performed by the exposure device 200. At this time, the third pattern P3 is formed in the third layer 73T together with the device pattern of the third layer. Moreover, in the third pattern transfer step of step S506, an alignment step of aligning the original plate 31 with the substrate 83 is performed. In the alignment step, the position of the mark 72 can be determined using the positions of the first pattern P1 and the second pattern P2 forming the mark 72 and the relative position information that has been prepared. At this time, the position of the second pattern P2 obtained from the image of the mark 72 can be converted into the position of the second pattern P2 in the case where the second pattern P2 is formed without any positional deviation relative to the first pattern P1 (conversion processing). Moreover, in the alignment step, in order to obtain the latest relative position information, a detection step of detecting the relative position information between the first pattern P1 and the second pattern P2 based on the image of the mark 72 can be performed.

[0101] In step S507, the relative position information obtained in step S506 is collected. In step S508, an adjustment step of adjusting at least one of the lithography apparatus for patterning the first layer and the lithography apparatus for patterning the second layer may be performed based on (the evaluation result of) the relative position information collected in step S507.

[0102] In step S509, the fourth layer is formed on the third layer 73T of the substrate 83. In step S510, the fourth layer is patterned by a fourth patterning step including a fourth pattern transfer step performed by the exposure device 200. At this time, the fourth pattern is formed in the fourth layer together with the device pattern of the fourth layer. Moreover, in the fourth pattern transfer step of step S510, for example, an alignment step of aligning the original plate 31 with the substrate 83 is performed using the mark 72 including the first pattern P1 of the first layer and the second pattern P2 of the second layer as an alignment mark. In the alignment step, a second detection step of detecting position information of the first pattern P1 of the first layer, the second pattern P2 of the second layer, and the third pattern P3 of the third layer may be performed.

[0103] In step S511, the position information obtained in step S510 is collected. In step S512, the relative position information (relative position information between the first pattern P1 and the second pattern P2) to be used in step S506 may be corrected based on the position information (the result of evaluation thereof) obtained in step S510 (the second detection step) and collected in step S511. Figure 5 In the lithography method shown in , the corrected relative position information is used in step S506. The correction of the relative position information may be performed to reduce the overlay error of the third layer relative to the first layer and the second layer.

[0104] In the second embodiment, an alignment step is performed on the first layer or the second layer as the target layer based on the position of the mark 72 including the first pattern P1 and the second pattern P2. In the alignment step, a detection step of detecting the relative position between the marks P1 and P2 is performed. In the detection step, as will be described later, the relative positions between the first pattern P1 of the first layer, the second pattern P2 of the second layer, and the third pattern P3 of the third layer can be detected.

[0105] Fig.11 An example is shown in which the first patterns P1-2 and P1-3 of the first layer, the second pattern P2 of the second layer, and the third pattern P3 of the third layer are accommodated in the image capturing area of ​​the image sensor 75. Fig.11 In the example shown in , optical images of the first mark 72 and the second mark 92 are contained in the image capture area of ​​the image sensor 75, the first mark 72 includes the first pattern P1-2 and the second pattern P2, and the second mark 92 includes the first pattern P1-3 and the third pattern P3.

[0106] (Item manufacturing method)

[0107] The following will exemplarily describe an article manufacturing method for manufacturing an article using the photolithography method according to the first or second embodiment. The article may be, for example, a device such as a semiconductor device, a display device, or a micro device (e.g., MEMS). The article manufacturing method may include a photolithography step of forming a plurality of layers (a first layer 73L, a second layer 73U, and a third layer 73T) by the above-mentioned photolithography method, and a processing step of processing the substrate that has undergone the photolithography step to thereby obtain the article. The processing step may include, for example, an etching step, an annealing step, a film deposition step, a cutting step, and a sealing step.

[0108] This specification and the drawings include the following disclosures.

[0109] (Item 1)

[0110] A photolithography method for forming a plurality of layers on a substrate, wherein the plurality of layers include a first layer, a second layer, and a third layer, wherein the first layer includes a first pattern, and the second layer includes a second pattern, and wherein the method comprises:

[0111] a detection step of detecting a relative position between the first pattern and the second pattern in an alignment step of the substrate and a master plate for patterning the third layer; and

[0112] An adjusting step of adjusting at least one of a lithographic apparatus used for patterning of the first layer and a lithographic apparatus used for patterning of the second layer based on the result obtained in the detecting step.

[0113] (Item 2)

[0114] The photolithography method according to item 1 is characterized in that

[0115] The adjusting step is performed to reduce overlay errors between the first layer, the second layer, and the third layer.

[0116] (Item 3)

[0117] The photolithography method according to item 1 or 2, characterized in that

[0118] In the alignment step, alignment between the substrate and the original plate is performed based on at least one of a position of the first pattern and a position of the second pattern.

[0119] (Item 4)

[0120] The photolithography method according to any one of items 1 to 3, characterized in that

[0121] In the adjusting step, an offset value for adjusting a patterning operation in at least one of a lithography apparatus for patterning the first layer and a lithography apparatus for patterning the second layer is adjusted.

[0122] (Item 5)

[0123] The photolithography method according to any one of items 1 to 4, characterized by further comprising

[0124] A registration step of registering, in a lithography apparatus for patterning the third layer, the first pattern and the second pattern whose relative positions should be detected in the detection step.

[0125] (Item 6)

[0126] The photolithography method according to item 5 is characterized in that

[0127] The registration step includes a step of registering a mark to be used for alignment between the substrate and the original plate in the alignment step.

[0128] (Item 7)

[0129] The photolithography method according to item 5 or 6, characterized in that

[0130] In the registration step, as the first pattern and the second pattern, marks arranged to be simultaneously accommodated in a field of view of a position measuring device in a lithography apparatus for patterning of the third layer are registered.

[0131] (Item 8)

[0132] The photolithography method according to any one of items 1 to 6, characterized in that

[0133] The first pattern and the second pattern are marks arranged to be simultaneously accommodated in a field of view of a position measuring device in a lithography apparatus for patterning of the third layer.

[0134] (Item 9)

[0135] The photolithography method according to any one of items 1 to 8, characterized in that

[0136] The lithography apparatus used for patterning of the first layer and the lithography apparatus used for patterning of the second layer are different lithography apparatuses from each other.

[0137] (Item 10)

[0138] The photolithography method according to any one of items 1 to 8, characterized in that

[0139] The lithography apparatus used for patterning the first layer and the lithography apparatus used for patterning the second layer are the same lithography apparatus.

[0140] (Item 11)

[0141] A method for manufacturing an article, characterized by comprising:

[0142] A photolithography step of forming a plurality of layers by the photolithography method defined in any one of items 1 to 10; and

[0143] A processing step of processing the substrate that has undergone the photolithography step to thereby obtain an article.

[0144] (Item 12)

[0145] An information processing method for processing information obtained in a photolithography method for forming a plurality of layers on a substrate, the plurality of layers comprising a first layer, a second layer, and a third layer, the first layer comprising a first pattern, the second layer comprising a second pattern, characterized by comprising:

[0146] a detecting step of detecting a position of the first pattern and a position of the second pattern based on an image obtained by capturing the first pattern and the second pattern in an alignment step of the substrate and the original plate for patterning the third layer; and

[0147] An adjustment step of generating adjustment information for adjusting at least one of a lithography apparatus for patterning the first layer and a lithography apparatus for patterning the second layer based on the result obtained in the detection step.

[0148] (Item 13)

[0149] The information processing method according to item 12 is characterized in that

[0150] The adjusting step is performed to reduce overlay errors between the first layer, the second layer, and the third layer.

[0151] (Item 14)

[0152] The information processing method according to item 12 or 13 is characterized in that

[0153] In the alignment step, alignment between the substrate and the original plate is performed based on at least one of a position of the first pattern and a position of the second pattern.

[0154] (Item 15)

[0155] The information processing method according to any one of items 12 to 14 is characterized in that

[0156] The adjustment information includes an offset value for adjusting a patterning operation in at least one of a lithography apparatus for patterning the first layer and a lithography apparatus for patterning the second layer.

[0157] (Item 16)

[0158] The information processing method according to any one of items 12 to 15 is characterized by further comprising

[0159] A registration step of registering, in a lithography apparatus for patterning the third layer, the first pattern and the second pattern whose relative positions should be detected in the detection step.

[0160] (Item 17)

[0161] The information processing method according to item 16 is characterized in that

[0162] The registration step includes a step of registering a mark to be used for alignment between the substrate and the original plate in the alignment step.

[0163] (Item 18)

[0164] The information processing method according to item 16 or 17 is characterized in that

[0165] In the registration step, as the first pattern and the second pattern, marks arranged to be simultaneously accommodated in a field of view of a position measuring device in a lithography apparatus for patterning of the third layer are registered.

[0166] (Item 19)

[0167] The information processing method according to any one of items 12 to 18 is characterized in that

[0168] The first pattern and the second pattern are marks arranged to be simultaneously accommodated in a field of view of a position measuring device in a lithography apparatus for patterning of the third layer.

[0169] (Item 20)

[0170] The information processing method according to any one of items 12 to 19 is characterized in that

[0171] The lithography apparatus used for patterning of the first layer and the lithography apparatus used for patterning of the second layer are different lithography apparatuses from each other.

[0172] (Item 21)

[0173] The information processing method according to any one of items 12 to 19 is characterized in that

[0174] The lithography apparatus used for patterning the first layer and the lithography apparatus used for patterning the second layer are the same lithography apparatus.

[0175] (Item 22)

[0176] A computer program configured to cause a computer to execute the information processing method defined in any one of items 12 to 21.

[0177] (Item 23)

[0178] An information processing device for processing information obtained in a photolithography method for forming a plurality of layers on a substrate, the plurality of layers comprising a first layer, a second layer, and a third layer, the first layer comprising a first pattern, the second layer comprising a second pattern, characterized in that it comprises:

[0179] a detecting step of detecting a position of the first pattern and a position of the second pattern based on an image obtained by capturing the first pattern and the second pattern in an alignment step of the substrate and the original plate for patterning the third layer; and

[0180] An adjustment step of generating adjustment information for adjusting at least one of a lithography apparatus for patterning the first layer and a lithography apparatus for patterning the second layer based on the result obtained in the detection step.

[0181] (Item 24)

[0182] A photolithography method for forming a plurality of layers on a substrate, wherein the plurality of layers include a first layer, a second layer, and a third layer, wherein the first layer includes a first pattern, and the second layer includes a second pattern, and wherein the method comprises:

[0183] a detecting step of detecting relative position information indicating a relative position between the first pattern and the second pattern in an alignment step of the substrate and a master for patterning the third layer; and

[0184] A step of collecting the relative position information obtained in the detecting step.

[0185] (Item 25)

[0186] The photolithography method according to item 24 is characterized in that

[0187] In the alignment step, alignment between the substrate and the original plate is performed based on at least one of a position of the first pattern and a position of the second pattern.

[0188] (Item 26)

[0189] The photolithography method according to item 24 or 25, characterized in that it also includes

[0190] An adjusting step of adjusting at least one of a lithographic apparatus for patterning the first layer and a lithographic apparatus for patterning the second layer based on the relative position information collected in the collecting step.

[0191] (Item 27)

[0192] The photolithography method according to item 26 is characterized in that

[0193] In the adjusting step, an offset value for adjusting a patterning operation in at least one of a lithography apparatus for patterning the first layer and a lithography apparatus for patterning the second layer is adjusted.

[0194] (Item 28)

[0195] The photolithography method according to any one of items 24 to 27, characterized in that it also includes

[0196] A registration step of registering the first pattern and the second pattern whose relative position information should be detected in a lithography apparatus for patterning the third layer.

[0197] (Item 29)

[0198] The photolithography method according to item 5 is characterized in that

[0199] The registration step includes the step of registering a mark to be used for alignment between the substrate and the original plate in the alignment step.

[0200] (Item 30)

[0201] The photolithography method according to item 28 is characterized in that

[0202] In the registration step, as the first pattern and the second pattern, marks arranged to be simultaneously accommodated in a field of view of a position measuring device in a lithography apparatus for patterning of the third layer are registered.

[0203] (Item 31)

[0204] The photolithographic method according to any one of items 24 to 30, characterized in that

[0205] The first pattern and the second pattern are marks arranged to be simultaneously accommodated in a field of view of a position measuring device in a lithography apparatus for patterning of the third layer.

[0206] (Item 32)

[0207] The photolithography method according to any one of items 24 to 31, characterized in that it also includes

[0208] A determining step of determining the occurrence of abnormality based on the relative position information collected in the collecting step.

[0209] (Item 33)

[0210] The photolithographic method according to any one of items 24 to 32, characterized in that

[0211] In the alignment step, alignment between the substrate and the original plate is performed based on both the position of the first pattern and the position of the second pattern.

[0212] (Item 34)

[0213] The photolithography method according to item 33 is characterized by further comprising

[0214] a step of forming a fourth layer on the third layer using a second original plate,

[0215] wherein the third layer comprises a third pattern,

[0216] The forming step includes a second detecting step of detecting position information of the first pattern, the second pattern, and the third pattern while aligning the substrate and the second original plate,

[0217] The alignment step is performed for a second substrate in addition to the substrate, and

[0218] In the alignment step for the second substrate, alignment between the second substrate and the original plate is performed based on both the position of the first pattern of the second substrate and the position of the second pattern of the second substrate and the position information obtained for the substrate in the second detection step.

[0219] (Item 35)

[0220] A method for manufacturing an article, characterized by comprising:

[0221] A photolithography step of forming a plurality of layers by the photolithography method defined in any one of items 24 to 34; and

[0222] A processing step of processing the substrate that has undergone the photolithography step to thereby obtain an article.

[0223] (Item 36)

[0224] An information processing method for processing information obtained in a photolithography method for forming a plurality of layers on a substrate, the plurality of layers comprising a first layer, a second layer, and a third layer, the first layer comprising a first pattern, the second layer comprising a second pattern, characterized by comprising:

[0225] a detection step of detecting relative position information indicating a relative position between the first pattern and the second pattern based on an image obtained by capturing the first pattern and the second pattern in an alignment step of the substrate and the original plate for patterning the third layer; and

[0226] A collecting step of collecting the information obtained in the detecting step.

[0227] (Item 37)

[0228] The information processing method according to item 36 is characterized in that

[0229] In the alignment step, alignment between the substrate and the original plate is performed based on at least one of a position of the first pattern and a position of the second pattern.

[0230] (Item 38)

[0231] The information processing method according to item 36 or 37 is characterized in that it also includes

[0232] An adjusting step of generating adjustment information for adjusting at least one of a lithographic apparatus for patterning the first layer and a lithographic apparatus for patterning the second layer based on the information collected in the collecting step.

[0233] (Item 39)

[0234] The information processing method according to item 38 is characterized in that

[0235] In the adjusting step, an offset value for adjusting a patterning operation in at least one of a lithography apparatus for patterning the first layer and a lithography apparatus for patterning the second layer is adjusted.

[0236] (Item 40)

[0237] The information processing method according to any one of items 36 to 39 is characterized by further comprising

[0238] A registration step of registering the first pattern and the second pattern whose relative position information should be detected in a lithography apparatus for patterning the third layer.

[0239] (Item 41)

[0240] The information processing method according to item 40 is characterized in that

[0241] The registration step includes the step of registering a mark to be used for alignment between the substrate and the original plate in the alignment step.

[0242] (Item 42)

[0243] The information processing method according to item 40 or 41 is characterized in that

[0244] In the registration step, as the first pattern and the second pattern, marks arranged to be simultaneously accommodated in a field of view of a position measuring device in a lithography apparatus for patterning of the third layer are registered.

[0245] (Item 43)

[0246] The information processing method according to any one of items 36 to 42 is characterized in that

[0247] The first pattern and the second pattern are marks arranged to be simultaneously accommodated in a field of view of a position measuring device in a lithography apparatus for patterning of the third layer.

[0248] (Item 44)

[0249] The information processing method according to any one of items 36 to 43 is characterized by further comprising

[0250] A determining step of determining the occurrence of abnormality based on the information collected in the collecting step.

[0251] (Item 45)

[0252] The information processing method according to item 44 is characterized in that

[0253] In the alignment step, alignment between the substrate and the original plate is performed based on both the position of the first pattern and the position of the second pattern.

[0254] (Item 46)

[0255] The information processing method according to item 45 is characterized in that

[0256] The third layer includes a third pattern, and the step of forming the fourth layer on the third layer using the second original plate further includes a second detection step of detecting position information of the first pattern, the second pattern, and the third pattern while aligning the substrate and the second original plate.

[0257] The alignment step is performed for a second substrate in addition to the substrate, and

[0258] In the alignment step for the second substrate, alignment between the second substrate and the original plate is performed based on both the position of the first pattern of the second substrate and the position of the second pattern of the second substrate and the position information obtained for the substrate in the second detection step.

[0259] (Item 47)

[0260] A computer program configured to cause a computer to execute the information processing method defined in any one of items 36 to 46.

[0261] (Item 48)

[0262] An information processing device for processing information obtained in a photolithography method for forming a plurality of layers on a substrate, the plurality of layers comprising a first layer, a second layer, and a third layer, the first layer comprising a first pattern, the second layer comprising a second pattern, characterized in that the device performs:

[0263] a detection step of detecting relative position information indicating a relative position between the first pattern and the second pattern based on an image obtained by capturing the first pattern and the second pattern in an alignment step of the substrate and the original plate for patterning the third layer; and

[0264] A collecting step of collecting the information obtained in the detecting step.

[0265] Other embodiments

[0266] Embodiments of the present invention may also be implemented by reading out and executing computer executable instructions (e.g., one or more programs) recorded on a storage medium (which may also be more completely referred to as a 'non-transitory computer-readable storage medium') to perform one or more of the functions of the above-mentioned embodiments and / or a computer of a system or device including one or more circuits (e.g., an application-specific integrated circuit (ASIC)) for performing one or more of the functions of the above-mentioned embodiments, and by a method performed by a computer of the system or device by, for example, reading out and executing computer executable instructions from a storage medium to perform one or more of the functions of the above-mentioned embodiments and / or controlling one or more circuits to perform one or more of the functions of the above-mentioned embodiments. The computer may include one or more processors (e.g., a central processing unit (CPU), a microprocessing unit (MPU)), and may include a network of separate computers or separate processors to read out and execute computer executable instructions. Computer executable instructions may be provided to the computer, for example, from a network or a storage medium. The storage medium may include, for example, a hard disk, a random access memory (RAM), a read-only memory (ROM), a storage device of a distributed computing system, an optical disk (such as a compact disk (CD), a digital versatile disk (DVD), or a Blu-ray disk (BD)) TM ), one or more of flash memory devices, memory cards, etc.

[0267] The embodiments of the present invention may also be implemented by providing software (program) for executing the functions of the above embodiments to a system or device via a network or various storage media, and a computer or a central processing unit (CPU) or a microprocessing unit (MPU) of the system or device reads and executes the program.

[0268] While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.

Claims

1. A photolithography method for forming a plurality of layers on a substrate, the plurality of layers comprising a first layer, a second layer, and a third layer, the first layer comprising a first pattern, the second layer comprising a second pattern, the photolithography method comprising: in aligning the substrate and the original plate for patterning of the third layer, detecting relative position information indicating a relative position between the first pattern and the second pattern; as well as The relative position information obtained in the detection is collected. 2 . The method according to claim 1 , wherein in the aligning, alignment between the substrate and the original plate is performed based on at least one of a position of the first pattern and a position of the second pattern. 3 . The method of claim 1 , further comprising adjusting at least one of a lithography apparatus used for patterning of the first layer and a lithography apparatus used for patterning of the second layer based on the relative position information collected in the collecting. 4 . The method of claim 3 , wherein in the adjusting, an offset value for adjusting a patterning operation in at least one of a lithography apparatus for patterning the first layer and a lithography apparatus for patterning the second layer is adjusted. The method of claim 3 , wherein the adjusting is performed to reduce overlay errors between the first layer, the second layer, and the third layer.

6. The method of claim 3, wherein a lithography apparatus used for patterning of the first layer and a lithography apparatus used for patterning of the second layer are different from each other.

7. The method of claim 3, wherein a lithography apparatus used for patterning the first layer and a lithography apparatus used for patterning the second layer are the same. 8 . The method according to claim 1 , further comprising registering the first pattern and the second pattern whose relative position information should be detected in a lithography apparatus for patterning the third layer. 9 . The method according to claim 8 , wherein the registering includes registering a mark to be used for alignment between the substrate and the original in the aligning. 10 . The method according to claim 8 , wherein in the registration, as the first pattern and the second pattern, marks arranged to be simultaneously accommodated in a field of view of a position measuring device in a lithography apparatus for patterning of the third layer are registered.

11. The method of claim 1, wherein the first pattern and the second pattern are marks arranged to be simultaneously accommodated in a field of view of a position measurement device in a lithography apparatus for patterning of the third layer. 12 . The method according to claim 1 , further comprising determining an occurrence of an abnormality based on the relative position information collected in the collecting. 13 . The method according to claim 1 , wherein in the aligning, alignment between the substrate and the original plate is performed based on both a position of the first pattern and a position of the second pattern.

14. The method according to claim 13, further comprising forming a fourth layer on the third layer using a second original plate, wherein the third layer comprises a third pattern, The forming includes detecting position information of the first pattern, the second pattern, and the third pattern while aligning the substrate and the second original plate, Alignment is performed for a second substrate in addition to the substrate, and In the alignment for the second substrate, alignment between the second substrate and the original plate is performed based on both the position of the first pattern of the second substrate and the position of the second pattern of the second substrate and the position information obtained for the substrate in detecting the position information.

15. A photolithography method for forming a plurality of layers on a substrate, the plurality of layers comprising a first layer, a second layer, and a third layer, the first layer comprising a first pattern, the second layer comprising a second pattern, the photolithography method comprising: detecting a relative position between the first pattern and the second pattern in aligning the substrate and the original for patterning of the third layer; as well as Based on the result obtained in the detecting, at least one of the lithographic apparatus used for patterning the first layer and the lithographic apparatus used for patterning the second layer is adjusted.

16. A method for manufacturing an article, the method comprising: forming a plurality of layers by a photolithographic method as defined in any one of claims 1 to 15; as well as The substrate having undergone the forming is processed, thereby obtaining an article.

17. An information processing method for processing information obtained in a photolithography method for forming a plurality of layers on a substrate, the plurality of layers comprising a first layer, a second layer, and a third layer, the first layer comprising a first pattern, the second layer comprising a second pattern, the information processing method comprising: detecting relative position information indicating a relative position between the first pattern and the second pattern based on an image obtained by capturing the first pattern and the second pattern in aligning the substrate and the original for the composition of the third layer; as well as The information obtained in the detection is collected.

18. An information processing method for processing information obtained in a photolithography method for forming a plurality of layers on a substrate, the plurality of layers comprising a first layer, a second layer, and a third layer, the first layer comprising a first pattern, the second layer comprising a second pattern, the information processing method comprising: detecting a position of the first pattern and a position of the second pattern based on an image obtained by capturing the first pattern and the second pattern in aligning the substrate and the original for the composition of the third layer; as well as Based on a result obtained in the detecting, adjustment information for adjusting at least one of a lithographic apparatus for patterning the first layer and a lithographic apparatus for patterning the second layer is generated.

19. A computer program product comprising instructions which, when executed by a processor, perform the information processing method defined in claim 17 or 18.

20. An information processing apparatus for processing information obtained in a photolithography method for forming a plurality of layers on a substrate, the plurality of layers comprising a first layer, a second layer, and a third layer, the first layer comprising a first pattern, the second layer comprising a second pattern, The device is configured as follows: detecting relative position information indicating a relative position between the first pattern and the second pattern based on an image obtained by capturing the first pattern and the second pattern in aligning the substrate and the original for composition of the third layer; and The information obtained in the detection is collected.

21. The device according to claim 20, The device is further configured to: detecting a position of the first pattern and a position of the second pattern based on an image obtained by capturing the first pattern and the second pattern in aligning the substrate and the original for composition of the third layer; and Based on a result obtained in the detecting, adjustment information for adjusting at least one of a lithographic apparatus for patterning the first layer and a lithographic apparatus for patterning the second layer is generated.

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