Reference voltage generating circuit

Abstract

The embodiment of the invention provides a reference voltage generating circuit which comprises a voltage generating circuit and a voltage amplifying circuit, the voltage generating circuit comprises a plurality of resistor modules connected in series, and transistor modules are connected to the two ends of at least two resistor modules in parallel; the output end is arranged between the adjacent transistor modules and is used for outputting temperature control voltage; the voltage generation circuit determines a temperature coefficient of the temperature control voltage at least based on a first parameter of the resistor module and a second parameter of the transistor module, the first parameter comprises an equivalent temperature coefficient, and the second parameter comprises a temperature coefficient of a threshold voltage of a conducted transistor in the transistor module; the voltage amplifying circuit is connected with the output end of the voltage generating circuit, and the voltage amplifying circuit is used for amplifying the temperature control voltage according to the temperature coefficient of the temperature control voltage to obtain reference voltage.

Description

Technical Field

[0001] The present disclosure relates to the field of integrated circuits, and relates to but is not limited to a reference voltage generating circuit. Background Art

[0002] In the field of integrated circuits, some components in an integrated circuit may have the characteristic of following temperature. For example, the threshold voltage of a MOS transistor changes as the temperature increases or decreases. For components in an integrated circuit that have temperature-dependent characteristics, providing a reference voltage that changes with temperature can ensure the normal operation of the circuit or improve the performance of the integrated circuit. In the related art, if the reference voltage is required to have both a positive temperature coefficient and a negative temperature coefficient, two different circuits are required to generate a reference voltage with a positive temperature coefficient and a reference voltage with a negative temperature coefficient, respectively, and one of them is selected for use through a multiplexer. Summary of the invention

[0003] According to one aspect of the present disclosure, there is provided a reference voltage generating circuit, comprising:

[0004] A voltage generating circuit, comprising: a plurality of resistor modules connected in series, at least two ends of the resistor modules being connected in parallel with transistor modules; an output end, arranged between adjacent transistor modules, for outputting a temperature-controlled voltage; the voltage generating circuit determines a temperature coefficient of the temperature-controlled voltage based at least on a first parameter of the resistor module and a second parameter of the transistor module, the first parameter comprising an equivalent temperature coefficient, and the second parameter comprising a temperature coefficient of a threshold voltage of a transistor turned on in the transistor module;

[0005] A voltage amplifier circuit is connected to the output end, and the voltage amplifier circuit is used to amplify the temperature-controlled voltage according to the temperature coefficient of the temperature-controlled voltage to obtain a reference voltage.

[0006] In the reference voltage generating circuit provided by the embodiment of the present disclosure, the temperature control coefficient of the temperature control voltage is at least related to the equivalent temperature coefficient of the resistor module and the temperature coefficient of the threshold voltage of the transistor turned on in the transistor module. The voltage generating circuit can adjust at least one of the equivalent temperature coefficient and the threshold voltage temperature coefficient of the transistor so that the temperature control voltage has a positive temperature coefficient, a zero temperature coefficient or a negative temperature coefficient. That is, the voltage generating circuit provided by the embodiment of the present disclosure can provide temperature control voltages with different temperature coefficients through a set of circuits, so as to select the temperature control voltage that best matches the temperature coefficient of the components to accurately control the components. And the voltage generating circuit only includes the resistor module and the transistor module, the circuit is relatively simple, occupies less area, and is conducive to the miniaturization of the device. Furthermore, in the present disclosure, the temperature control voltage is affected by the equivalent temperature coefficient and the threshold voltage temperature coefficient, so that when the temperature coefficient of the equivalent temperature coefficient and the threshold voltage is adjusted to produce a large change, the temperature coefficient of the temperature control voltage changes less, so that the adjustment of the temperature coefficient of the temperature control voltage is more precise and accurate, and it is easier to obtain a temperature control voltage that accurately matches the temperature coefficient of the components.

[0007] Furthermore, the voltage amplifier circuit provided in the embodiment of the present disclosure can select the gain of the voltage amplifier circuit for the temperature-controlled voltage according to the temperature coefficient of the temperature-controlled voltage, and amplify the temperature-controlled voltage based on the gain to obtain a reference voltage. The gain can make reference voltages with different temperature coefficients have a target voltage at the target temperature, thereby providing a variety of optional reference voltages for components to operate at the target temperature, and then a reference voltage with a temperature coefficient that best matches the temperature coefficient of the component can be selected from the multiple optional reference voltages, providing a basis for refined control of components and facilitating improved device performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 A schematic diagram of a reference voltage generating circuit provided by an embodiment of the present disclosure;

[0009] Figure 2 A schematic diagram of another reference voltage generating circuit provided in an embodiment of the present disclosure;

[0010] Figure 3 A schematic diagram of a voltage generating circuit provided in an embodiment of the present disclosure;

[0011] Figure 4 A schematic diagram of another voltage generating circuit provided in an embodiment of the present disclosure;

[0012] Figure 5 A schematic diagram of another voltage generating circuit provided in an embodiment of the present disclosure;

[0013] Figure 6 A schematic diagram of a temperature-controlled voltage provided by an embodiment of the present disclosure;

[0014] Figure 7 A schematic diagram of another voltage generating circuit provided in an embodiment of the present disclosure;

[0015] Figure 8 for Figure 4 A schematic diagram of four temperature-controlled voltages provided by the voltage generating circuit shown;

[0016] Fig. 9 A schematic diagram of a voltage amplification circuit provided by an embodiment of the present disclosure;

[0017] Fig.10 A schematic diagram of another reference voltage generating circuit provided in an embodiment of the present disclosure;

[0018] Fig.11 for Fig.10 A mapping relationship table corresponding to the reference voltage generating circuit shown;

[0019] Fig.12 for Fig.10 A schematic diagram of four reference voltages provided by the reference voltage generating circuit shown;

[0020] Fig.13 for Fig.10 A schematic diagram of eight reference voltages provided by the reference voltage generating circuit shown;

[0021] Fig.14 A corresponding schematic diagram of another mapping relationship table and a first control signal and a second control signal provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0022] The technical solutions of the present disclosure are described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the technical solutions described in the embodiments of the present disclosure can be combined arbitrarily without conflict.

[0023] As the performance of dynamic random access memory (DRAM) continues to improve, more and more circuits require fine control to cope with temperature changes, such as transistors in storage cells and sensitive amplifiers. In the fine control of circuits, it is essential to use a reference voltage with a certain temperature coefficient. Taking the transistor in the storage cell as an example, its threshold voltage V th May increase as the temperature decreases. If the gate voltage V gs Keeping it constant, V gs -V thThe gate voltage of the control transistor needs to have a negative temperature coefficient to improve DRAM performance.

[0024] Figure 1 A schematic diagram of a reference voltage generating circuit provided by an embodiment of the present disclosure is shown in FIG. Figure 1 As shown, the reference voltage includes three different circuits, which respectively generate reference voltages with positive temperature coefficient, zero temperature coefficient and negative temperature coefficient. Among them, the first sub-circuit 01 generates a reference voltage with a positive temperature coefficient by using the current I_PTAT with a positive temperature coefficient to flow through the circuit, and the reference voltage can be expressed as I_PTAT×R. The second sub-circuit 02 has a bandgap reference voltage source Bandgap, which generates a reference voltage with a zero temperature coefficient. The third sub-circuit 03 generates a reference voltage with a negative temperature coefficient by using the current I_CTAT with a negative temperature coefficient to flow through the circuit, and the reference voltage can be expressed as I_CTAT×R.

[0025] In some embodiments, the third sub-circuit 03 may further include a transistor (eg, a PNP transistor), using a voltage V between the base and the emitter of the transistor. be and the current I_CTAT with a negative temperature coefficient together generate a reference voltage with a negative temperature coefficient, which can be expressed as: V be +I_CTAT×R.

[0026] The three sets of circuits are connected to a three-selection multiplexer 04, through which one is selected for use, so that the reference voltage has a positive, negative or zero temperature coefficient. However, such a reference voltage generation circuit consumes a large amount of power and occupies a large area, which is not conducive to the miniaturization of the device. In addition, some problems will be encountered when using the currents I_PTAT and I_CTAT to generate the reference voltage. For example, due to process reasons, I_PTAT and R may cause a large difference between the actual value and the design value, resulting in a larger range of variation of the value of I_PTAT×R, making it difficult for the reference voltage to obtain a more accurate voltage value range. For another example, the temperature coefficient of I_PTAT is too large, which leads to a large temperature coefficient of the reference voltage.

[0027] In view of this, an embodiment of the present disclosure provides a reference voltage generating circuit to obtain a reference voltage with a small occupied area and a relatively accurate voltage value range. Figure 2 A reference voltage generating circuit provided for the implementation of the present disclosure includes:

[0028] The voltage generating circuit 100 includes: a plurality of resistor modules 110 connected in series, at least two ends of the resistor modules 110 are connected in parallel with transistor modules 120; an output end is arranged between adjacent transistor modules 120, and is used to output a temperature-controlled voltage Vt; the voltage generating circuit 100 determines a temperature coefficient of the temperature-controlled voltage Vt based on a first parameter of the resistor module 110 and a second parameter of the transistor module 120, wherein the first parameter includes an equivalent temperature coefficient of the resistor module 110, and the second parameter includes a temperature coefficient of a threshold voltage of a transistor turned on in the transistor module 120;

[0029] The voltage amplifier circuit 200 is connected to the output end of the voltage generating circuit 100 . The voltage amplifier circuit 200 is used to amplify the temperature-controlled voltage Vt according to the temperature coefficient of the temperature-controlled voltage Vt to obtain a reference voltage Vref.

[0030] In the present disclosure, the resistor module 110 has an equivalent resistance, and the equivalent temperature coefficient is used to indicate the rate of change of the equivalent resistance with temperature. The value of the equivalent temperature coefficient can be: the ratio of the increase in the equivalent resistance to the original equivalent resistance when the temperature changes by 1°C.

[0031] The temperature coefficient of the threshold voltage of a transistor is used to indicate the rate of change of the threshold voltage of the transistor with temperature. The threshold voltage temperature coefficient can be: the ratio of the change in the threshold voltage to the original threshold voltage when the temperature changes by 1°C.

[0032] In some embodiments, the first parameter further includes the equivalent resistance of the resistor module, and the second parameter further includes the channel width-to-length ratio of the transistor turned on in the transistor module; the voltage generating circuit 100 is used to adjust at least one of the equivalent temperature coefficient, the equivalent resistance, the channel width-to-length ratio of the turned-on transistor, and the threshold voltage temperature coefficient of the turned-on transistor to adjust the temperature coefficient of the temperature-controlled voltage Vt. Here, the channel width-to-length ratio of the transistor refers to the ratio of the channel width to the channel length of the transistor.

[0033] It should be understood that after the chip is manufactured, the threshold voltage, temperature coefficient of the threshold voltage, and channel width-to-length ratio of the transistor are determined. Therefore, adjusting the threshold voltage temperature coefficient of the transistor and / or the ratio of the channel width-to-length ratio is essentially replacing transistors of different specifications for conduction, or selecting different numbers of transistors for conduction, and cannot adjust a transistor itself. Similarly, after the resistor is manufactured, its temperature coefficient is determined. For non-variable resistors, their resistance is also determined. The equivalent resistance and equivalent temperature coefficient of the adjustment resistor module can be achieved by enabling resistors with different resistance values ​​and / or temperature coefficients and enabling different numbers of resistors.

[0034] In some embodiments, Figure 3As shown, the voltage generating circuit 100 may include: a pull-up transistor module 121 and a pull-down transistor module 122; a plurality of resistor modules 110 include: a pull-up resistor module 111 connected in parallel with the pull-up transistor module 121 and a pull-down resistor module 112 connected in parallel with the pull-down transistor module 122; an output end of the voltage generating circuit 200 is provided between the pull-up resistor module 111 and the pull-down resistor module 112.

[0035] Here, the pull-up transistor module 121 and the pull-down transistor module 122 both belong to the transistor module 120 .

[0036] The pull-up resistor module 111 has a first equivalent resistance R1 and a first equivalent temperature coefficient TRC1, the pull-down resistor module 112 has a second equivalent resistance R2 and a second equivalent temperature coefficient TRC2, the pull-up transistor turned on in the pull-up transistor module 121 has a threshold voltage Vth1, a threshold voltage temperature coefficient TRC3, and a channel width-to-length ratio (W / L) 1, and the pull-down transistor turned on in the pull-down transistor module 122 has a threshold voltage Vth2, a threshold voltage temperature coefficient TRC4, and a channel width-to-length ratio (W / L) 2. The voltage generating circuit 100 can adjust at least one of R1, TRC1, R2, TRC2, TRC3, (W / L) 1, TRC4, and (W / L) 2 according to the first control signal to adjust the temperature coefficient of the temperature-controlled voltage Vt.

[0037] In some embodiments, Figure 3 As shown, the other end of the pull-up resistor module 111 is connected to a bandgap reference voltage source for receiving a bandgap reference voltage Vbgr; the other end of the pull-down resistor module 112 is connected to a first voltage node, and the voltage of the first voltage node is less than the bandgap reference voltage Vbgr. For example, the first voltage node is a ground terminal Gnd. In this circuit connection mode, the pull-up transistor module 121 may include a Pmos transistor, and the pull-down transistor module 122 may include an NMOS transistor.

[0038] Combine the following Figure 3 Temperature control voltage Vt at reference temperature int For the convenience of analysis, the temperature coefficient can be analyzed in three cases.

[0039] In the first embodiment, the pull-up resistor module 111, the pull-up transistor module 121 and the pull-down resistor module 112 are enabled by the first control signal, and the pull-down transistor module 122 is disabled. According to Kirchhoff's current law:

[0040]

[0041] Among them, I d1 is the current in the turned-on pull-up transistor in the pull-up transistor module 121 .

[0042] According to formula (1), it can be transformed into:

[0043]

[0044]

[0045] Among them, I d1 =0.5×μ1×C OX1 (W / L)1×(V gs1 -V th1 ) 2 , is the current calculation formula when the pull-up transistor is in the on state, C OX1 is the unit capacitance of the gate dielectric layer, μ1 is the average mobility of carriers in the channel, and Vgs1 is the gate-source voltage, that is, the voltage of the gate relative to the source; Substituting this current calculation formula into formula (2) yields formula (3). In formula (4), β1 = 0.5 × μ1 × C OX1 (W / L)1, β1 is a positive number.

[0046] From formula (4), it can be seen that the temperature-controlled voltage Vt is a function related to the first equivalent resistance R1, the second equivalent resistance R2, the threshold voltage Vth1 of the on-pull-up transistor, and the channel width-to-length ratio (W / L)1 of the on-pull-up transistor. Further, the channel width-to-length ratio (W / L)1 of the pull-up transistor is not related to temperature, while R1, R2 and Vth1 are all related to temperature, and the correlation can be expressed by the first equivalent temperature coefficient TRC1, the second equivalent temperature coefficient TRC2 and the threshold voltage temperature coefficient TRC3. Therefore, the temperature-controlled voltage Vt is related to temperature, and the temperature coefficient of the temperature-controlled voltage Vt is at least related to TRC1, TRC2 and TRC3. Explained by a formula:

[0047] When the temperature rises from the reference temperature to the current temperature, the temperature control voltage Vt at the current temperature can be expressed as:

[0048]

[0049] ΔT is the difference between the current temperature and the reference temperature, which may be -40°C or a normal temperature of 25°C.

[0050] From this formula, we can see that the temperature coefficient of the temperature control voltage Vt is related to R1, R2, V th1 , TRC1, TRC2, TRC3 and (W / L)1 (included in β1). In other words, when the temperature changes ΔT, the value of the temperature-controlled voltage Vt depends on these parameters. Therefore, the voltage generating circuit 100 can at least adjust the first equivalent resistor R1, the second equivalent resistor R2, the first equivalent temperature coefficient TRC1, the second equivalent temperature coefficient TRC2, the pull-up transistor threshold voltage Vth1 , threshold voltage temperature coefficient TRC3 and channel width-to-length ratio (W / L) 1 to adjust the temperature coefficient of the temperature control voltage Vt.

[0051] In some embodiments, the first equivalent temperature coefficient TRC1 may be equal to the second equivalent temperature coefficient TRC2. In this case, the temperature control voltage Vt at the current temperature may be expressed as:

[0052]

[0053] As shown in formula (5), the first equivalent temperature coefficient TRC1 is equal to the second equivalent temperature coefficient TRC2, which can reduce the variables in the calculation formula of the temperature control voltage Vt, thereby reducing the difficulty of adjustment.

[0054] In some embodiments, combined with formula (5), it can be seen that when the first equivalent temperature coefficient TRC1 is equal to the second equivalent temperature coefficient TRC2, and both are positive; the threshold voltage Vth1 of the turned-on pull-up transistor is negative, and the temperature coefficient TRC3 of the threshold voltage is negative (that is, as the temperature increases, the absolute value of the threshold voltage decreases), the temperature-controlled voltage Vt may have a positive temperature coefficient.

[0055] It should be noted that, from formula (5), it can be seen that Vt is a cubic function of ΔT, and ΔT 3 The coefficient is greater than zero. If the temperature control voltage Vt is to have a positive temperature coefficient, the relationship between the parameters in formula (5) should be constrained according to the relationship between the coefficients when the cubic function satisfies monotonically increasing or partially satisfies monotonically increasing, so that when the temperature is within the operating temperature range of the component, the function of the temperature control voltage Vt increases monotonically. For example, based on the cubic function formula, an extreme point of the function is obtained at According to the threshold voltage Vth1, threshold voltage temperature coefficient TRC3, and gate-source voltage Vgs1 of the commonly used pull-up transistor, ΔT is a negative number with a large absolute value. Therefore, the temperature-controlled voltage can have a positive temperature coefficient within a common temperature range (for example, greater than -40°C). For example, when (V gs1 -V th1 )TRC1=-V th1 At TRC3, the temperature control voltage Vt always has a positive temperature coefficient.

[0056] The present disclosure below uses a specific example to analyze the temperature coefficient of the temperature control voltage Vt. Let R1 = 1Ω, R2 = 5Ω, TCR1 = 0.03 / °C, Vth1 = -0.8V, Vgs1 = -2.5V, TCR3 = -0.01 / °C, β1 = 0.2, and substitute into formula (5) to obtain:

[0057]

[0058] The temperature-controlled voltage Vt shown in formula (6) has a positive temperature coefficient when ΔT is greater than -279°C. It can be basically considered that the temperature-controlled voltage Vt has a positive temperature coefficient within the temperature range of the components. Specifically, taking ΔT = 10 as an example, substituting into formula (6) the value of the temperature-controlled voltage Vt at the current temperature is 0.833Vbgr + 0.686, and taking ΔT = 50 as an example, the value of the temperature-controlled voltage Vt at the current temperature is 0.833Vbgr + 1.838, and taking ΔT = 100 as an example, the value of the temperature-controlled voltage Vt at the current temperature is 0.833Vbgr + 4.167, while the value of the temperature-controlled voltage Vt at the reference temperature is 0.833Vbgr + 0.482. It can be seen that as the temperature increases, the temperature-controlled voltage Vt also increases.

[0059] In the second embodiment, the pull-up resistor module 111, the pull-down resistor module 112 and the pull-down transistor module 122 are enabled by the first control signal, and the pull-up transistor module 121 is disabled. According to Kirchhoff's current law:

[0060]

[0061] According to formula (7), it can be transformed into:

[0062]

[0063] From formula (8), it can be seen that the temperature-controlled voltage Vt is a function related to the first equivalent resistance R1, the second equivalent resistance R2, the threshold voltage Vth2 of the turned-on pull-down transistor, and the channel width-to-length ratio (W / L) 2 of the turned-on pull-down transistor. Further, R1, R2, and Vth2 are all related to temperature, and the correlation can be expressed by the first equivalent temperature coefficient TRC1, the second equivalent temperature coefficient TRC2, and the threshold voltage temperature coefficient TRC4. Therefore, the temperature-controlled voltage Vt is related to temperature, and the temperature coefficient of the temperature-controlled voltage Vt is also related to TRC1, TRC2, and TRC4.

[0064] In some embodiments, the first equivalent temperature coefficient TRC1 may be equal to the second equivalent temperature coefficient TRC2. In this case, the temperature control voltage Vt at the current temperature may be expressed as:

[0065]

[0066] In some embodiments, combined with formula (9), it can be seen that when the first equivalent temperature coefficient TRC1 is equal to the second equivalent temperature coefficient TRC2, and both are positive; the threshold voltage Vth2 of the turned-on pull-down transistor is positive, and the temperature coefficient TRC4 of the threshold voltage is negative (that is, as the temperature increases, the absolute value of the threshold voltage decreases), the temperature-controlled voltage Vt may have a negative temperature coefficient.

[0067] Similarly, it should be noted that, from formula (9), Vt is also a cubic function of ΔT, and ΔT 3 The coefficient is less than zero. If the temperature control voltage Vt is to have a negative temperature coefficient, the relationship between the parameters in formula (9) should be constrained according to the relationship between the coefficients when the cubic function satisfies monotonically decreasing or partially satisfies monotonically decreasing, so that when the temperature is within the operating temperature range of the component, the function of the temperature control voltage Vt decreases monotonically. For example, based on the cubic function formula, a maximum point of the function is obtained at According to the threshold voltage Vth2, threshold voltage temperature coefficient TRC4, and gate-source voltage Vgs2 of the commonly used pull-down transistor, ΔT is a negative number with a large absolute value. Therefore, the temperature-controlled voltage Vt has a negative temperature coefficient in a commonly used temperature range (for example, greater than -40°C). For example, when (V gs2 -V th2 )TRC1=-V th2 At TRC4, the temperature control voltage Vt always has a negative temperature coefficient.

[0068] The temperature coefficient of the temperature control voltage Vt is analyzed in a specific embodiment. In this embodiment, R1, R2 and TCR1 are kept unchanged relative to the previous embodiment, Vth2 = 0.8V, Vgs2 = 2.5V, TCR4 = -0.01 / °C, β2 = 0.2, and substituting into formula (9) yields:

[0069]

[0070] The temperature-controlled voltage Vt shown in formula (10) has a negative temperature coefficient when ΔT is greater than -279°C. It can be basically considered that the temperature-controlled voltage Vt has a negative temperature coefficient within the temperature range of the components. Specifically, taking ΔT = 10 as an example, substituting into formula (10) the value of the temperature-controlled voltage Vt at the current temperature is 0.833Vbgr-0.686, and taking ΔT = 50 as an example, the value of the temperature-controlled voltage Vt at the current temperature is 0.833Vbgr-1.838, while the value of the temperature-controlled voltage Vt at the reference temperature is 0.833Vbgr-0.482. It can be seen that as the temperature increases, the temperature-controlled voltage Vt decreases.

[0071] In the third embodiment, the pull-up resistor module 111 and the pull-down resistor module 112 are enabled by the first control signal, and the pull-up transistor module 121 and the pull-down transistor module 122 are disabled. According to the voltage calculation formula of the series circuit, at the reference temperature, the temperature control voltage Vt int The calculation formula can be expressed as:

[0072]

[0073] When the temperature changes (e.g., increases) from the reference temperature to the current temperature, the calculation formula of the temperature control voltage Vt at the current temperature can be expressed as:

[0074]

[0075] In some embodiments, the first equivalent temperature coefficient TRC1 may be equal to the second equivalent temperature coefficient TRC2. In this case, the temperature control voltage Vt at the current temperature may be expressed as: The temperature control voltage Vt has the same temperature coefficient as the bandgap reference voltage Vbgr, that is, the temperature control voltage Vt has a zero temperature coefficient.

[0076] It can be seen from the above three embodiments that the voltage regulating circuit 100 can at least adjust the equivalent temperature coefficient of the resistor module and the temperature coefficient of the threshold voltage of the transistor in the transistor module so that the temperature-controlled voltage Vt has a positive temperature coefficient, a zero temperature coefficient or a negative temperature coefficient. th1 、TRC3、(W / L)1、V th2 , TRC4, (W / L)2, so that the temperature control voltage Vt has different positive temperature coefficients, different negative temperature coefficients or zero temperature coefficient.

[0077] In addition, it should be noted that in some other embodiments, the first equivalent temperature coefficient TRC1 is equal to the second equivalent temperature coefficient TRC2 and both are negative. If the threshold voltage Vth1 of the turned-on pull-up transistor is negative and the temperature coefficient TRC3 of the threshold voltage is positive, the temperature-controlled voltage Vt may have a negative temperature coefficient. If the threshold voltage Vth2 of the pull-down transistor is positive and the temperature coefficient TRC4 of the threshold voltage is positive, the temperature-controlled voltage Vt may have a positive temperature coefficient. It should be understood that transistors usually have negative temperature coefficients, but in the foreseeable future, transistors with positive temperature coefficients may also be applied to integrated circuits.

[0078] In summary, the voltage generating circuit provided in the embodiment of the present disclosure can provide temperature-controlled voltages with different temperature coefficients through a set of circuits, so as to select the temperature-controlled voltage that best matches the temperature coefficient of the components to accurately control the components. In addition, the voltage generating circuit only includes a resistor module and a transistor module, the circuit is relatively simple, occupies less area, and is conducive to the miniaturization of the device. Furthermore, in the present disclosure, the equivalent temperature coefficient and the threshold voltage temperature coefficient affect the temperature-controlled voltage based on a relatively complex calculation formula, so that when the temperature coefficient of the equivalent temperature coefficient and the threshold voltage is adjusted to produce a large change, the temperature coefficient of the temperature-controlled voltage changes less, so that the adjustment of the temperature coefficient of the temperature-controlled voltage is more precise and accurate, and it is easy to obtain a temperature-controlled voltage that accurately matches the temperature coefficient of the components.

[0079] In some embodiments, the pull-up resistor module 111, the pull-down resistor module 112, the pull-up transistor module 121, and the pull-down transistor module 122 may also be enabled according to the first control signal. As described above, enabling the pull-up transistor module 121 may generate a positive temperature coefficient, and enabling the pull-down transistor module 122 may generate a negative temperature coefficient. Then, when the pull-up transistor module 121 and the pull-down transistor module 122 are enabled at the same time, the positive and negative temperature coefficients may compensate each other, which may have greater advantages. First, more different temperature coefficients may be obtained, and second, the mutual compensation of the positive and negative temperature coefficients may reduce the difference between different temperature coefficients, thereby making the adjustment of the temperature coefficient of the temperature-controlled voltage more precise and accurate, and making it easier to obtain a temperature-controlled voltage that accurately matches the temperature coefficient of the components.

[0080] In some embodiments, the pull-up resistor module 111 may include a plurality of pull-up resistors connected in series, and pull-up switches are connected in parallel at both ends of some of the pull-up resistors, and each pull-up switch enables or disables the corresponding pull-up resistor based on the first control signal. The pull-down resistor module 112 may include a plurality of pull-down resistors connected in series and / or in parallel, and pull-down switches are connected in parallel at both ends of some of the pull-down resistors, and each pull-down switch enables or disables the corresponding pull-down resistor based on the first control signal.

[0081] Figure 4 Schematic diagram of another voltage generating circuit provided by an embodiment of the present disclosure. Figure 4 As shown, the pull-up resistor module 111 may include a first pull-up resistor 11, a second pull-up resistor 12, a third pull-up resistor 13 and a fourth pull-up resistor 14 connected in series, wherein the first pull-up switch S 11 In parallel with the pull-up resistors 11, 12, 13, 14, the second pull-up switch S 12 In parallel with the pull-up resistors 12, 13, and 14, the third pull-up switch S 13 In parallel with the pull-up resistors 13 and 14, the fourth pull-up switch S 14 Connected in parallel with the pull-up resistor 14.

[0082] It should be noted that the first pull-up resistor 11, the second pull-up resistor 12, the third pull-up resistor 13 and the fourth pull-up resistor 14 are all pull-up resistors. 11 , the second pull-up switch S 12 , the third pull-up switch S 13 and the fourth pull-up switch S 14 They are all pull-up switches. This application defines them as "pull-up" and does not limit them to being used to pull up the temperature control voltage Vt after being enabled. It is just because they are the side that receives the power signal - the bandgap reference voltage, and no other aspects are limited.

[0083] In some embodiments, if the pull-up switch S 11 Disconnect and S 12 The pull-up resistor module 111 only includes the first pull-up resistor 11, so the first equivalent resistance R1 and the first equivalent temperature coefficient TRC1 of the pull-up resistor module 111 correspond to the resistance R of the first pull-up resistor 11. 11 and temperature coefficient TCR 11 .

[0084] In some embodiments, if the pull-up switch S 11 , S 12 Disconnect and S 13 If the pull-up resistor module 111 is closed, the pull-up resistor module 111 includes a first pull-up resistor 11 and a second pull-up resistor 12 connected in series. The resistance of the second pull-up resistor 12 is R 12 , the temperature coefficient is TCR 12 The first equivalent temperature coefficient TCR1 of the pull-up resistor module 111 can be expressed as:

[0085]

[0086] Among them, ΔR 11 and ΔR 21 The resistance change of the first pull-up resistor 11 and the resistance change of the second pull-up resistor 12 when the temperature changes ΔT can be expressed as: ΔR 11 =R 11 ×TCR 11 , ΔR 12 =R 12 ×TCR 12 .

[0087] Combining formula (12), it can be seen that if the temperature coefficient TCR of the first pull-up resistor 11 is 11 The temperature coefficient TCR of the second pull-up resistor 12 12 Same (TCR 11 =TCR 12 ), then TCR1=TCR 11, that is, the first equivalent coefficient TRC1 remains unchanged. However, the first equivalent resistance value changes from R 11 Change to R 11 +R 12 .

[0088] It can be deduced from this that if the temperature coefficients of multiple pull-up resistors connected in series are the same, enabling different pull-up resistors or enabling different numbers of pull-up resistors can change the first equivalent resistance R1, but will not affect the first equivalent temperature coefficient TRC1. Therefore, the voltage generating circuit can control the pull-up switch based on the first control signal to adjust the first equivalent resistance R1, thereby changing the temperature coefficient of the temperature-controlled voltage Vt.

[0089] In this embodiment, Figure 4 As shown, the temperature coefficients of all pull-up resistors 11, 12, 13, and 14 are the same. In this way, it can be ensured that no matter how the pull-up switch S is configured, 11 , S 12 , S 13 , S 14 , the first equivalent temperature coefficient TRC1 always remains unchanged and is equal to the second equivalent temperature coefficient TRC2.

[0090] In some embodiments, Figure 4 As shown, the pull-down resistor module 112 may include a first pull-down resistor 21, a second pull-down resistor 22, a third pull-down resistor 23 and a fourth pull-down resistor 24 connected in series, wherein the first pull-down switch S 21 In parallel with the pull-down resistors 21, 22, 23, 24, the second pull-down switch S 22 In parallel with the pull-down resistors 22, 23, and 24, the third pull-down switch S 23 In parallel with the pull-down resistors 23 and 24, the fourth pull-down switch S 24 Connected in parallel with the pull-down resistor 24.

[0091] It should be noted that the first pull-down resistor 21, the second pull-down resistor 22, the third pull-down resistor 23 and the fourth pull-down resistor 24 are all pull-down resistors. 21 , the second pull-down switch S 22 , the third pull-down switch S 23 and the fourth pull-down switch S 24 They are all pull-down switches. The definition of "pull-down" in this application does not limit them to being used to pull down the temperature control voltage Vt after being enabled, but only because they are one side of the ground terminal, and no other aspects are limited.

[0092] In some embodiments, based on the same analysis idea as the above formula (12), if the temperature coefficients of multiple pull-down resistors are the same, the voltage generating circuit 100 can change the second equivalent resistance R2 by controlling the pull-down switch, enabling different pull-down resistors or enabling different numbers of pull-down resistors, but will not affect the second equivalent temperature coefficient TRC2. In this way, it can be ensured that no matter how the pull-down switch is configured, the first equivalent temperature coefficient TRC1 is always equal to the second equivalent temperature coefficient TRC2.

[0093] In addition, in some embodiments, when the temperature coefficients of multiple pull-up resistors connected in series are not exactly the same, and / or the temperature coefficients of multiple pull-down resistors connected in series are different, the voltage generating circuit may enable different pull-up resistors or enable different numbers of pull-up resistors to change the first equivalent resistance and / or the first equivalent temperature coefficient; and / or enable different pull-down resistors or enable different numbers of pull-down resistors to change the second equivalent resistance and / or the second equivalent temperature coefficient, thereby changing the temperature coefficient of the temperature-controlled voltage Vt.

[0094] In some embodiments, the number of the plurality of resistance modules 110 may be greater than two, and the equivalent temperature coefficients of each resistance module are equal. Figure 4 As shown, the multiple resistor modules may further include a voltage divider resistor module 115 , which may be located between the pull-up resistor module 111 and the pull-down resistor module 112 , and the connection point between the voltage divider resistor module 115 and the pull-up resistor module 111 is the output end of the voltage generating circuit 110 .

[0095] It can be seen from formula (12) that the temperature coefficient of the whole formed by multiple resistor modules with the same temperature coefficient connected in series is the same as the temperature coefficient of each resistor module. Therefore, in the embodiment of the temperature-controlled voltage with a positive temperature coefficient corresponding to the above formula (5), the voltage-dividing resistor module 115 can be regarded as part of the pull-down resistor module 112, affecting the second equivalent resistance R2, thereby affecting the temperature coefficient of the temperature-controlled voltage Vt. In the embodiment of the negative temperature coefficient corresponding to formula (9), the voltage at the connection point of the voltage-dividing resistor module 115 and the pull-down resistor module 112 has the same temperature coefficient as the temperature-controlled voltage Vt at the connection point C, so the voltage-dividing resistor module 115 can be regarded as part of the pull-up resistor module 111, and the voltage at the connection point of the voltage-dividing resistor module 115 and the pull-down resistor module 112 is obtained, and then the temperature-controlled voltage Vt is determined according to the equivalent resistance of the pull-up resistor module 112 and the voltage-dividing resistor module 115. That is, the other resistance modules in the voltage generating circuit except the pull-up resistance module 111 and the pull-down resistance module 112 can adjust the temperature coefficient of the temperature-controlled voltage Vt by adjusting the first equivalent resistance value and / or the second equivalent resistance value.

[0096] In some embodiments, the pull-up resistor module 111 may include a plurality of pull-up resistors connected in parallel, some of which are connected in series with a pull-up switch, and the pull-up switch may enable or disable the corresponding pull-up resistor based on the first control signal. The pull-down resistor module 112 may include a plurality of pull-down resistors connected in parallel, some of which are connected in series with a pull-down switch, and the pull-down switch may enable or disable the corresponding pull-up resistor based on the first control signal.

[0097] Figure 5 A schematic diagram of another voltage generating circuit provided in an embodiment of the present disclosure is shown in FIG. Figure 5 As shown, the pull-up resistor module 111 may include a first pull-up resistor 11, a second pull-up resistor 12, a third pull-up resistor 13, and a fourth pull-up resistor 14 connected in parallel. The first pull-up resistor 11 is connected in series with the first pull-up switch S 11 The second pull-up resistor 12 is connected in series with the second pull-up switch S 12 The third pull-up resistor 13 is connected in series with the third pull-up switch S 13 The fourth pull-up resistor 14 is connected in series with the fourth pull-up switch S 14 .

[0098] In some embodiments, if any two pull-up switches are closed and the other two pull-up switches are open, for example, the pull-up switches S 11 , S 12 If the pull-up switch is closed and the other pull-up switches are open, the pull-up resistor module 111 includes a first pull-up resistor 11 and a second pull-up resistor 12 connected in parallel. The first equivalent temperature coefficient TCR1 of the pull-up resistor module 111 can be expressed as:

[0099]

[0100] Combining formula (13), it can be seen that if the temperature coefficient TCR of the first pull-up resistor 11 is 11 The temperature coefficient TCR of the second pull-up resistor 12 12 Same (TCR 11 =TCR 12 ), then TCR1=TCR 11 , that is, the first equivalent coefficient T1 remains unchanged. However, the first equivalent resistance value changes from R 11 Change to R 11 R 12 / (R 11 +R 12 ).

[0101] It can be deduced from this that when the temperature coefficients of multiple pull-up resistors connected in parallel are the same, enabling different pull-up resistors or enabling different numbers of pull-up resistors can change the first equivalent resistance R1, but will not affect the first equivalent temperature coefficient TRC1. Therefore, the voltage generating circuit can adjust the first equivalent resistance by controlling the pull-up switch based on the first control signal, thereby changing the temperature coefficient of the temperature-controlled voltage Vt.

[0102] In some embodiments, Figure 5 As shown, the pull-down resistor module 120 may include a first pull-down resistor 21, a second pull-down resistor 22, a third pull-down resistor 23, and a fourth pull-down resistor 24 connected in parallel. The first pull-down resistor 21 may be connected in series with the first pull-down switch S 21 The second pull-down resistor 22 can be connected in series with the second pull-down switch S 22 The third pull-down resistor 23 can be connected in series with the third pull-down switch S 23 The fourth pull-down resistor 14 can be connected in series with the fourth pull-down switch S 24 .

[0103] Based on the same analysis idea as the above formula (13), it can be known that when the temperature coefficients of the multiple pull-down resistors connected in parallel are the same, the voltage generating circuit 100 can enable different pull-down resistors or different numbers of pull-down resistors to adjust the second equivalent resistance R2, but will not affect the second equivalent temperature coefficient TRC2. In this way, it can be ensured that no matter how the pull-down switch is configured, the first equivalent temperature coefficient TRC1 is always equal to the second equivalent temperature coefficient TRC2.

[0104] In this embodiment, Figure 5 As shown, the temperature coefficients of all the pull-up resistors 11, 12, 13, 14 and all the pull-down resistors 21, 22, 23, 24 are the same, so that the pull-up switch S can be configured in any manner. 11 , S 12 , S 13 , S 14 and pull-down switch S 21 , S 22 , S 23 , S 24 , the first equivalent temperature coefficient TRC1 is always equal to the second equivalent temperature coefficient TRC2.

[0105] It should be understood that in some embodiments, the pull-up resistor module 110 may include multiple pull-up resistors connected in series, and the pull-down resistor module 120 may include multiple pull-down resistors connected in parallel. In other embodiments, the pull-up resistor module 110 may include multiple pull-up resistors connected in parallel, and the pull-down resistor module 120 may include multiple pull-down resistors connected in series. For example, the temperature coefficients of the pull-up resistors are the same, and the temperature coefficients of the pull-down resistors are the same and equal to the temperature coefficients of the pull-up resistors.

[0106] In some embodiments, each resistor in the resistor module may be one of resistors commonly used in CMOS, such as a diffusion resistor, a polysilicon resistor, a metal resistor, and a Well resistor.

[0107] In some embodiments, the pull-up transistor module 121 may include a plurality of pull-up transistors connected in parallel, each of which is connected in series with a pull-up control switch, and the source and drain of each turned-on pull-up transistor are connected to both ends of the pull-up resistor module 111. The pull-down transistor module 122 may include a plurality of pull-down transistors connected in parallel, each of which is connected in series with a pull-down control switch, and the source and drain of each turned-on pull-down transistor are connected to both ends of the pull-down resistor module 112.

[0108] Continue to see Figure 4 The pull-up transistor module 121 may include a first pull-up transistor P16, a second pull-up transistor P8, a third pull-up transistor P4 and a fourth pull-up transistor P2 connected in parallel, and the pull-up transistors P16, P8, P4 and P2 are respectively connected in series with a first pull-up control switch S 31 , the second pull-up control switch S 32 , the third pull-up control switch S 33 , the fourth pull-up control switch S 44 The drain of each pull-up transistor is connected to the connection point C, and a pull-up control switch is connected in series between the source of the pull-up transistor and one end of the pull-up resistor module 111. When the pull-up control switch is turned on, the source of the corresponding pull-up transistor is electrically connected to one end of the pull-up resistor module 111, so that the turned-on pull-up transistor is connected in parallel to both ends of the pull-up resistor module 111.

[0109] The pull-up transistor has at least three parameters that will affect the temperature coefficient of the temperature-controlled voltage Vt, namely, a channel width-to-length ratio (W / L) 1, a threshold voltage Vth1, and a threshold voltage temperature coefficient TRC3.

[0110] In some embodiments, Figure 4As shown, the channel width-to-length ratios of the multiple pull-up transistors P16, P8, P4, and P2 can be different from each other, for example, the channel width ratio of P16 is 16, the channel width ratio of P8 is 8, the channel width ratio of Ps4 is 4, and the channel width ratio of P2 is 2. The threshold voltage Vth1 and the threshold voltage temperature coefficient TRC3 of all pull-up transistors are the same, and the voltage generating circuit can adjust the channel width-to-length ratio (W / L)1 of the transistor turned on in the transistor module 130 by selecting different transistors for conduction. In the manufacturing process, adjusting the channel width-to-length ratio of the transistor only requires changing the length and width of the channel region. Adjusting the threshold voltage or threshold voltage temperature coefficient of the transistor may require changing the gate, the gate dielectric layer composition, or using a back gate with different doping to achieve, which will increase the complexity and difficulty of the process. Therefore, only adjusting the channel width-to-length ratio of the transistor can relatively simplify the manufacturing process and has good compatibility with existing processes.

[0111] In other embodiments, the channel width ratio (W / L)1 and the threshold voltage Vth1 of all pull-up transistors may be the same, and the threshold voltage temperature coefficients TRC3 of different pull-up transistors may be different; or, the channel width ratio (W / L)1 and the threshold voltage temperature coefficients TRC3 of all pull-up transistors may be the same, and the threshold voltages Vth1 of different pull-up transistors may be different. In this way, when any one of the above three parameters remains unchanged, the other one can be adjusted, thereby reducing the difficulty of adjusting the temperature-controlled voltage Vt.

[0112] In some other embodiments, the channel width ratio (W / L)1 of multiple pull-up transistors may be different, the threshold voltage temperature coefficient TRC3 may be different, and the threshold voltage Vth1 of all pull-up transistors may be the same. For example, in an example including four pull-up transistors, the channel width ratio of the first pull-up transistor and the second pull-up transistor may be 16, but the threshold voltage temperature coefficients are -0.01 / °C and -0.03 / °C respectively; the channel width ratio of the third pull-up transistor and the fourth pull-up transistor is 8, but the threshold voltage temperature coefficients are -0.01 / °C and -0.03 / °C respectively, and the threshold voltage of all pull-up transistors is -0.8V. In this way, the voltage generating circuit can adjust the channel width-to-length ratio (W / L)1 and the threshold voltage temperature coefficient TRC3 of the pull-up transistor turned on in the pull-up transistor module 121 by selecting different pull-up transistors to be turned on. That is, one of the three parameters may be kept unchanged and the other two may be adjusted; or all three parameters may be different and the temperature coefficient of the temperature-controlled voltage Vt may be changed by adjusting the three parameters.

[0113] In some embodiments, continuing to participate Figure 4The pull-down transistor module 122 may include a first pull-down transistor N16, a second pull-down transistor N8, a third pull-down transistor N4, and a fourth pull-down transistor N2 connected in parallel, and the pull-down transistors N16, N8, N4, and N2 are respectively connected in series with a first pull-down control switch S 41 , the second pull-down control switch S 42 , the third pull-down control switch S 43 , the fourth pull-down control switch S 44 The source and drain of each turned-on pull-down transistor are connected in parallel to two ends of the pull-down resistor module 112 .

[0114] Based on the analysis similar to the above-mentioned pull-up transistor module 111, it can be known that the pull-down transistor has at least three parameters that affect the temperature coefficient of the temperature-controlled voltage Vt, namely, the channel width-to-length ratio (W / L)2, the threshold voltage Vth2, and the threshold voltage temperature coefficient TRC4. Therefore, by reasonably configuring multiple pull-down transistors, the multiple pull-down transistors can meet the following requirements: two of the three parameters remain unchanged and the other one is adjusted; or one remains unchanged and the other two are adjusted; or all three parameters are different and the temperature coefficient of the temperature-controlled voltage Vt is changed by adjusting the three.

[0115] For example, the channel width-to-length ratios (W / L)2 of the plurality of pull-down transistors N16, N8, N4, and N2 may be different from each other, for example, their channel width ratios (W / L)2 are 16, 8, 4, and 2, respectively. The threshold voltage Vth2 and the threshold voltage temperature coefficient TRC4 of all the pull-down transistors are the same, and the voltage generating circuit may adjust the channel width-to-length ratio (W / L)2 of the pull-down transistors turned on in the pull-down transistor module 121 by selecting different pull-down transistors to be turned on, thereby adjusting the temperature coefficient Vt of the temperature-controlled voltage.

[0116] In some embodiments, Figure 4 As shown, the gate of each pull-up transistor is connected to the connection point C of the pull-up resistor module 111 and the pull-down resistor module 121, that is, the gate and drain of the pull-up transistor are short-circuited, so that the pull-up transistor is in a diode connection mode.

[0117] Corresponds to Figure 4 The connection mode of the gate of the transistor in the figure, the calculation formula of the temperature control voltage Vt at the reference temperature can be further transformed from formula (4) into:

[0118]

[0119] In some embodiments, when the first equivalent temperature coefficient TRC1 is equal to the second equivalent temperature coefficient TRC2, and the first equivalent resistance R1 is much smaller than the second equivalent resistance R2, formula (14) can be further transformed into:

[0120] Vt int -Vbgr =β1×R1×(Vt int -V bgr -V th1 ) 2 (15)

[0121] Let Von = Vt int -V bgr , then formula (11) can be simplified as: Von = β1 × R1 × (Von-V th1 ) 2 (16)

[0122] Formula (16) is a quadratic equation with one variable. Two roots can be obtained. Considering the actual situation, we can choose one of the roots, namely:

[0123]

[0124]

[0125]

[0126] According to formula (19), when the first equivalent resistance R1 of the pull-up resistor module has a positive temperature coefficient, the threshold voltage Vth1 of the pull-up transistor turned on in the pull-up transistor module is a negative number, and the temperature coefficient TRC3 of the threshold voltage is a negative number (that is, as the temperature increases, the absolute value of the threshold voltage decreases), the temperature-controlled voltage Vt may have a positive temperature coefficient. The positive temperature coefficient of the temperature-controlled voltage Vt can be changed by adjusting β1 or R1, where β1 is proportional to the channel width-to-length ratio (W / L) 1 of the pull-up transistor; when β1×R1 is large, it can also be understood that when the first equivalent temperature coefficient TRC1 of the pull-up resistor module is large, the temperature-controlled voltage Vt is approximately a linear function of temperature. When β1×R1 is relatively small, the temperature-controlled voltage Vt exhibits a quadratic function of temperature under the combined action of the threshold voltage Vth1 and the first equivalent resistance R1. It is necessary to further constrain Vth1 and R1 so that when the temperature is within the operating temperature range of the component, the temperature-controlled voltage Vt is in the monotonically rising interval of the quadratic function.

[0127] Figure 6 yes Figure 4 The schematic diagram of a temperature-controlled voltage output by the voltage generating circuit shown in FIG. Figure 4 and Figure 6 , the pull-up transistor and the pull-up resistor are connected in parallel, which clamps the temperature control voltage Vt. Figure 4Taking the first pull-up transistor P16 and the pull-up resistors 11 to 14 shown in parallel as an example, when the temperature-controlled voltage Vt has a positive temperature coefficient, when the temperature is lower than the lower limit temperature T1, the temperature-controlled voltage Vt decreases again, which will increase the gate-source voltage Vgs1 of the first pull-up transistor P16, thereby increasing the on-current of the first pull-up transistor P16, limiting the further decrease of the temperature-controlled voltage Vt, and the temperature-controlled voltage Vt no longer decreases linearly, but decelerates slowly, resulting in a clamping phenomenon.

[0128] Similarly, when the temperature is higher than the upper limit temperature T2, the temperature-controlled voltage Vt increases further, which will reduce the gate-source voltage Vgs1 of the first pull-up transistor P16, thereby reducing the on-current of the first pull-up transistor P16, limiting the further increase of the temperature-controlled voltage Vt. The temperature-controlled voltage Vt no longer increases linearly, but increases very slowly, and becomes clamped. The temperature-controlled voltage Vt approaches the bandgap reference voltage Vbgr more and more.

[0129] In some embodiments, even at low temperatures, if the reference voltage is too small, the driving capability is small, the anti-noise interference capability is weak, and there will be reliability issues. Even at high temperatures, if the reference voltage is too large, there will be reliability, power consumption, heat dissipation and other issues. Although it is hoped that the reference voltage provided can follow the changes in the requirements of components, if the reference voltage has upper and lower limits, the reliability of the device can be improved and power consumption can be saved. The temperature-controlled voltage provided by the voltage generating circuit provided in this embodiment can have a temperature coefficient that follows the component, and the temperature-controlled voltage has upper and lower limits for constraints, so that the reference voltage obtained based on the temperature-controlled voltage can inherit this characteristic, thereby providing device reliability.

[0130] Similarly, in some embodiments, the gate and drain of each pull-down transistor are short-circuited, so that the pull-down transistor is connected in a diode manner, thereby clamping the temperature control voltage Vt.

[0131] Figure 7 Schematic diagram of another voltage generating circuit provided by an embodiment of the present disclosure. Figure 7 As shown, the two ends of the second pull-up resistor 12 are connected in parallel with a second pull-up switch S 12 The third pull-up switch S is connected in parallel to both ends of the third pull-up resistor 13. 13 The fourth pull-up switch S is connected in parallel to both ends of the fourth pull-up resistor 14. 14 Based on the pull-up switch S 12 , S 13 , S 14 , the pull-up resistor module 111 can obtain 8 different first equivalent resistance values ​​R1, thereby increasing the diversity of the temperature coefficient of the temperature-controlled voltage Vt. Similarly, the pull-down resistors 22, 23, and 24 can be respectively connected in parallel with the pull-down switch S 22 , S23 , S 24 .

[0132] Continue to see Figure 7 , the pull-up transistor module 121 in this embodiment only includes a first pull-up transistor P16, a second pull-up transistor P8, a third pull-up transistor P4 and a fourth pull-up transistor P2 connected in parallel, and may not include a pull-up control switch. The source and drain of each pull-up transistor P16, P8, P4, P2 are connected in parallel to the two ends of the pull-up resistor module 111, and the first control signal is directly applied to the gate of the pull-up transistor P16, P8, P4, P2 to control its conduction or cutoff, thereby adjusting the parameters of the turned-on pull-up transistor. Similarly, the pull-down transistor module 122 may also only include pull-down transistors N16, N8, N4, N2, and the source and drain of each pull-down transistor N16, N8, N4, N2 are connected in parallel to the two ends of the pull-down resistor module 112, and the first control signal is directly applied to the gate of the pull-down transistor N16, N8, N4, N2 to control its conduction or cutoff.

[0133] In summary, the voltage generating circuit provided in the embodiment of the present disclosure can adjust the equivalent resistance value and equivalent temperature coefficient of the resistance module, the threshold voltage of the transistor turned on in the transistor module, the temperature coefficient of the threshold voltage, and at least one of the channel width-to-length ratio, so that the temperature-controlled voltage Vt has different positive temperature coefficients, different negative temperature coefficients, or zero temperature coefficient.

[0134] Figure 8 for Figure 4 The voltage generating circuit shown in FIG. 1 provides four temperature-controlled voltages. The pull-up resistor module 111, the pull-up transistor module 121 and the pull-down resistor module 112 (for example, disconnecting S 21 To S 24 ) is enabled, and the pull-down transistor module 122 is disabled (disconnecting S 41 To S 44 ), used to produce different positive temperature coefficients.

[0135] For example, when the first pull-up control switch S 31 Close and pull up switch S 11 , S 12 , S 13 , S 14 When disconnected, the first pull-up transistor P16 and the pull-up resistors 11, 12, 13, 14 are connected in parallel, and the image of the output first temperature-controlled voltage Vt1 is a first straight line Vt1. 32 Close, pull up switch S 11 , S 12 , S 13 Disconnect and S 14When closed, the second pull-up transistor P8 and the pull-up resistors 11, 12, and 13 are connected in parallel, and the image of the output second temperature-controlled voltage Vt2 is a second straight line Vt2. 33 Close, pull up switch S 11 , S 12 Disconnect and S 13 When the third transistor P4 is closed, the pull-up resistors 11 and 12 are connected in parallel, and the image of the output third temperature-controlled voltage Vt3 is the second straight line Vt3. 34 Close, pull up switch S 11 Disconnect and S 12 When closed, the fourth transistor P2 is connected in parallel with the pull-up resistor 11, and the image of the output fourth temperature-controlled voltage Vt4 is a second straight line Vt4. Here, the unmentioned pull-up control switch is in an open state in each case.

[0136] For example, Figure 4 In the embodiment, the resistance value of each pull-up resistor is equal and the temperature coefficient is the same, the channel width-to-length ratios of the pull-up transistors P16, P8, P4 and P2 are 16, 8, 4 and 2 respectively, and the threshold voltages and threshold voltage temperature coefficients of these pull-up transistors are equal to each other. Based on formula (19), it can be seen that the temperature coefficients of the first temperature-controlled voltage Vt1, the second temperature-controlled voltage Vt2, the third temperature-controlled voltage Vt3 and the fourth temperature-controlled voltage Vt4 increase in sequence.

[0137] It should be noted that, in theory, the function corresponding to the temperature control voltage Vt is formula (19), but since the temperature coefficient TRC1 of the first equivalent resistance R1 and the temperature coefficient TRC3 of the threshold voltage of the pull-up transistor are very small, the temperature coefficient of the temperature control voltage Vt is also small. In the temperature range commonly used by components, it can be basically regarded that the temperature control voltage changes linearly with temperature, that is, the image of the temperature control voltage is a straight line, so it can be expressed by the formula Vt = a × ΔT + b. In this formula, ΔT = TT int , T int is the reference temperature, for example -40°C, and a and b can be obtained by fitting by measuring multiple sets of (T, Vt) values.

[0138] like Figure 8 As shown, when the temperature-controlled voltage has different positive temperature coefficients, the straight lines corresponding to the temperature-controlled voltage have different slopes, which may result in different voltage values ​​of the temperature-controlled voltages with different positive temperature coefficients at the target temperature (e.g., 85°C). For example, in the figure, the voltage value of the first straight line Vt1 at 85°C may be 1.037V, the voltage value of the second straight line Vt2 at 85°C may be 1.014V, the voltage value of the third straight line Vt3 at 85°C may be 0.991V, and the voltage value of the fourth straight line Vt4 at 85°C may be 0.970V.

[0139] It should be understood that providing a suitable reference voltage Vref to components can ensure that the components work normally or are in the best working state at the target temperature. Here, the voltage required for the components to work normally or in the best working state at the target temperature can be defined as the target voltage. For example, the target voltage for the components to work in the best state at 85°C is 1.0V±10mV. Figure 8 As shown, the voltage values ​​of temperature control voltages with different temperature coefficients at 85°C are not all within the target voltage range (approximately in the range of 0.96 to 1.04V), which may cause components to fail to work normally at the target temperature when using a certain temperature control voltage (for example, the first temperature control voltage Vt1, the second temperature control voltage Vt2 and the fourth temperature control voltage Vt4).

[0140] Therefore, if Figure 2 As shown, the present disclosure sets a voltage amplifier circuit 200 in a reference voltage generating circuit, which is used to amplify the temperature-controlled voltage Vt according to a second control signal to obtain a reference voltage Vref; wherein the second control signal is used to characterize the correspondence between the preset gain of the temperature-controlled voltage Vt of the voltage amplifier circuit 200 and the temperature coefficient of the temperature-controlled voltage Vt, and the obtained reference voltage Vref has a target voltage value at a target temperature, which can meet the requirements for component use.

[0141] It should be understood that the "preset gain" in the present disclosure can be a value greater than 1, so that the reference voltage is greater than the temperature control voltage; it can also be a value greater than 0 and less than 1, so that the reference voltage is less than the temperature control voltage; or it can also be a value equal to 1.

[0142] Fig. 9 A circuit diagram of a voltage amplifier circuit provided by an embodiment of the present disclosure is shown in FIG. Fig. 9 As shown, the first input terminal of the voltage amplifier circuit 200 is connected to the output terminal of the voltage generating circuit 100 for receiving the temperature-controlled voltage Vt, the first regulating resistor 31 is connected in series between the second input terminal and its output terminal, and the second regulating resistor 32 is connected in series between the second input terminal and the second voltage node;

[0143] The voltage amplifier circuit 200 includes a circuit for adjusting the resistance of the first adjustment resistor 31 and / or the resistance of the second adjustment resistor 32 according to the second control signal to adjust the gain of the voltage amplifier circuit 200 for the temperature-controlled voltage Vt to a preset gain so that the reference voltage Vref has a target voltage value at the target temperature.

[0144] By way of example, the second voltage node may be a ground terminal.

[0145] In some embodiments, the first regulating resistor 31 and the second regulating resistor 32 may be variable resistors. In some other embodiments, the first regulating resistor 31 and the second regulating resistor 32 may be MOS transistors, which are used as variable resistors by controlling the gate voltage of the MOS transistor to make the MOS transistor in the linear region.

[0146] Fig.10 A circuit diagram of another reference voltage generating circuit provided in an embodiment of the present disclosure should be understood as follows: Fig.10 The voltage generating circuit in can be Figure 4 , Figure 5 and Figure 7 Any of the voltage generating circuits shown in the present embodiment, with Figure 4 The voltage generating circuit shown is used as an example for explanation.

[0147] In some embodiments, Fig.10 As shown, the voltage amplification circuit 200 may include: an adjustment resistance module 210 and a first selector 220;

[0148] One end of the regulating resistor module 210 is connected to the output end of the voltage amplifier circuit, and the other end is connected to the second voltage node (for example, the ground end Gnd); the regulating resistor module 210 includes a plurality of sub-regulating resistors (for example, a first sub-regulating resistor 41, a second sub-regulating resistor 42 ... an Nth sub-regulating resistor 4n) connected in series, and a voltage dividing point is provided between each two adjacent sub-regulating resistors;

[0149] The multiple input terminals of the first selector 220 are correspondingly connected to the multiple voltage dividing points of the regulating resistor module 210, and the output terminal of the first selector 220 is connected to the second input terminal of the voltage amplifier circuit; the first selector 220 is used to conduct the specified voltage dividing point with the second input terminal of the voltage amplifier circuit according to the second control signal; wherein, the multiple sub-regulating resistors between the specified voltage dividing point and the output terminal of the voltage amplifier circuit are equivalent to the first regulating resistor 31, and the multiple sub-regulating resistors between the specified voltage dividing point and the second voltage node (for example, the ground terminal) are equivalent to the second regulating resistor 32. The first selector 220 changes the resistance value of the first regulating resistor 31 and the resistance value of the second regulating resistor 32 by selecting different voltage dividing points to conduct with the second input terminal of the voltage amplifier circuit, thereby changing the gain of the voltage amplifier circuit 200 to the temperature control voltage Vt.

[0150] In some embodiments, Fig. 9 and Fig.10 As shown, the voltage amplification circuit 200 further includes:

[0151] An amplifier 230, wherein the inverting input terminal of the amplifier 230 is the first input terminal of the voltage amplifier circuit 200 and is connected to the output terminal of the voltage generating circuit, and the non-inverting input terminal of the amplifier 230 is the second input terminal of the voltage amplifier circuit 200 and is connected to the output terminal of the first selector 220;

[0152] The load tube 240 has a gate connected to the output end of the amplifier 230, a source connected to the third voltage node, and is used to receive the power supply voltage Vdd. The drain is connected to the regulating resistor module 210 (that is, connected to the output end of the voltage amplifier circuit 200). The connection point between the drain of the load tube 240 and the regulating resistor module 210 outputs the reference voltage Vref. Here, the load tube 240 is a PMOS transistor, and the power supply voltage Vdd of the third voltage node is greater than the voltage of the second voltage node.

[0153] As shown above, the voltage generating circuit controls the pull-up switch, the pull-down switch, the pull-up control switch and / or the pull-down control switch based on the first control signal to adjust the temperature coefficient of the temperature-controlled voltage Vt. After the temperature coefficient is determined, it is necessary to adjust the first adjustment resistor 31 and the second adjustment resistor 32 so that the voltage amplifier circuit 200 obtains a preset gain, and amplifies the temperature-controlled voltage Vt based on the preset gain, so as to achieve the reference voltage Vref having a target voltage at the target temperature. It can be seen that there should be a certain corresponding relationship between the preset gain and the state of the pull-up switch, the pull-down switch, the pull-up control switch and / or the pull-down control switch, that is, there should be a certain mapping relationship between the state of the pull-up switch, the pull-down switch, the pull-up control switch and / or the pull-down control switch, and the resistance value of the first adjustment resistor and the second adjustment resistor; and the first control signal and the second control signal are provided based on the mapping relationship to achieve the reference voltage Vref having a target voltage at the target temperature.

[0154] In some embodiments, if Fig. 9 In the voltage amplifier circuit shown, the first regulating resistor and the second regulating resistor are MOS tubes, and the items of the mapping relationship may include: the state of the pull-up switch, the pull-down switch, the pull-up control switch and / or the pull-down control switch, the gate voltage of the first MOS tube (equivalent to the first regulating resistor 31) and the gate voltage of the second MOS tube (equivalent to the second regulating resistor 32). The first control signal is used to control these switches to be in a closed or open state. The second control signal is used to provide a suitable gate voltage to the gate of the first MOS tube and the gate of the second MOS tube.

[0155] In some embodiments, Fig.10 Taking the voltage amplifier circuit shown in FIG. 1 as an example, the items of the mapping relationship may include: a pull-up switch, a pull-down switch, the state of the pull-up control switch and / or the pull-down control switch, and the state of the first selector. For example, Fig.10The medium voltage generating circuit can generate at most 16×16 temperature-controlled voltages with different temperature coefficients.

[0156] In this embodiment, taking the output of the first temperature-controlled voltage Vt1, the second temperature-controlled voltage Vt2, the third temperature-controlled voltage Vt3 and the fourth temperature-controlled voltage Vt4 as described above by the voltage generating circuit as an example, correspondingly, the regulating resistor module 210 may include 5 first sub-regulating resistors 41, the second sub-regulating resistors 42, the third sub-regulating resistors 43, the fourth sub-regulating resistors 44 and the fifth sub-regulating resistors 45 connected in series, wherein the fifth sub-regulating resistor 45 is closer to the second voltage node (ground terminal Gnd). There are first, second, third and fourth voltage dividing points between these sub-regulating resistors in sequence. The first selector 220 may have four input terminals, for example, the first input terminal, the second input terminal, the third input terminal and the fourth input terminal of the first selector are sequentially connected to the first voltage dividing point, the second voltage dividing point, the third voltage dividing point and the fourth voltage dividing point, so as to adjust the voltage values ​​of the temperature-controlled voltages with four different positive temperature coefficients to be 1V at 85°C.

[0157] Fig.11 for Fig.10 A mapping relationship table of the reference voltage generating circuit shown in FIG. Fig.12 for Fig.10 The schematic diagram of four reference voltages provided by the reference voltage generating circuit shown in the figure. The reference voltage generating circuit can generate a first reference voltage Vref1, a second reference voltage Vref2, a third reference voltage Vref3 and a fourth reference voltage Vref4 with a positive temperature coefficient. These four reference voltages are obtained by amplifying four temperature-controlled voltages Vt1, Vt2, Vt3 and Vt4 respectively, and the voltage values ​​are all 1V at 85°C.

[0158] like Fig.11 As shown, taking the fourth reference voltage Vref4 as an example, when the voltage generating circuit outputs the fourth temperature-controlled voltage Vt4, the first input terminal and the output terminal of the first selector 220 can be turned on to select the first sub-adjusting resistor 41 as the first adjusting resistor, and the remaining sub-adjusting resistors as the second adjusting resistors, so that the voltage value of the first reference voltage Vref1 at 85°C can be achieved to be 1V.

[0159] In some embodiments, at the target temperature, the greater the difference between the voltage value of the temperature control voltage Vt and the target voltage, the greater the required gain. For example, Fig.10 In the circuit shown, the greater the ratio of (first adjustment resistor+second adjustment resistor) / second adjustment resistor, the greater the gain of the voltage amplifier circuit.

[0160] Taking the first reference voltage Vref1 as an example, when the voltage generating circuit outputs the first temperature control voltage Vt1, Figure 8As shown, the voltage value of the first temperature-controlled voltage Vt1 at 85°C is smaller, so a larger gain is required. At this time, the fourth input terminal and the output terminal of the first selector 220 can be turned on to select the sub-adjusting resistors 41, 42, 43, and 44 as the first adjusting resistors, and the remaining sub-adjusting resistors as the second adjusting resistors, so that the voltage amplifier circuit 200 obtains a larger gain, thereby achieving a voltage value of 1V for the second reference voltage Vref2 at 85°C.

[0161] Similarly, when the voltage generating circuit outputs the second temperature-controlled voltage Vt2, the third input terminal and the output terminal of the first selector can be turned on. When the voltage generating circuit outputs the third temperature-controlled voltage Vt3, the second input terminal and the output terminal of the first selector can be turned on.

[0162] In some embodiments, the voltage amplifier circuit 200 does not substantially change the temperature coefficient of the temperature control voltage. Therefore, based on the temperature coefficients of the first temperature control voltage Vt1 to the fourth temperature control voltage Vt2, it can be seen that in this embodiment, Fig.12 As shown, the temperature coefficients of the first reference voltage Vref1, the third reference voltage Vref3, the second reference voltage Vref2 and the fourth reference voltage Vref4 decrease in this order.

[0163] Fig.13 for Fig.10 Schematic diagram of eight reference voltages provided by the reference voltage generating circuit shown in FIG. Among them, the reference voltages Vref1 to Vref4 are the same as those in the above embodiment, so they are not repeated. In other embodiments, the resistor modules 111 and 112 can be enabled and the transistor modules 121 and 122 can be disabled to generate a fifth reference voltage Vref5 with a zero temperature coefficient. For example, all switches S 11 To S 14 , S 21 To S 24 , S 31 To S 34 , S 41 To S 44 , so that the pull-up resistors 11 to 14 and the pull-down resistors 21 to 24 are connected in series.

[0164] In some other embodiments, the pull-up resistor module 111 may be enabled (eg, the switch S is turned off). 11 To S 14 ), the pull-down resistor module 112 and the pull-down transistor module 122, disabling the pull-up transistor module 121 (disconnecting the switch S 31 To S 34 ) to generate reference voltages Vref6, Vref7, and Vref8 with negative temperature coefficients.

[0165] For example, when the first pull-down control switch S 41Close and pull down switch S 21 , S 22 , S 23 , S 24 When disconnected, the first pull-down transistor N16 and the pull-down resistors 21, 22, 23, and 24 are connected in parallel to output the sixth reference voltage Vref6. 42 Close, pull down switch S 21 , S 22 , S 23 Disconnect and S 24 When closed, the second pull-down transistor N8 and the pull-down resistors 21, 22, and 23 are connected in parallel to output the seventh reference voltage Vref7. 43 Close, pull down switch S 21 , S 22 Disconnect and S 23 When closed, the third pull-down transistor N4 and the pull-down resistors 21 and 22 are connected in parallel to output the eighth reference voltage Vref8. Here, the unprovided pull-down control switch is in an open state.

[0166] It should be understood that when eight reference voltages need to be output, the first selector needs more input terminals, for example, 8. More sub-adjustment resistors need to be configured in the adjustment resistor module to ensure, for example, that there are 8 voltage division points connected to the 8 input terminals of the first selector respectively, so as to provide different preset gains for temperature-controlled voltages with different temperature coefficients. For example, the first selector also includes a fifth input terminal corresponding to the fifth reference voltage Vref5, a sixth input terminal corresponding to the sixth reference voltage Vref6, a seventh input terminal corresponding to the seventh reference voltage Vref7, and an eighth input terminal corresponding to the eighth reference voltage Vref8.

[0167] It should be noted that, in some embodiments, if there are two or more temperature-controlled voltages with different temperature coefficients whose voltage values ​​are equal at the target temperature, they can share the same preset gain, thereby reducing the number of input terminals of the first selector.

[0168] In some embodiments, the first selector may include a multi-level sub-selector, for example, two first-level sub-selectors with a four-to-one selection and one second-level sub-selector with a two-to-one selection, the input end of the first-level sub-selector being connected to the voltage dividing point of the adjustment resistance module, the output end being connected to the input end of the second-level sub-selector, and the output end of the second-level sub-selector being connected to the in-phase input end of the amplifier.

[0169] In some embodiments, the number of states of the second control signal may be the same as the number of states of the first control signal. Fig.10As shown, the first control signal requires at least 3 bits to control the pull-up switch, the pull-down switch, the pull-up control switch and the pull-down control switch to output eight temperature-controlled voltages. For example, the first control signal controls the switch to be turned on or off according to the above switch states based on eight states of 000, 001, 010, 011, 100, 101, 110 and 111 to generate eight temperature-controlled voltages accordingly. The second control signal requires 3 bits to control the first selector 220 to select different input terminals to be connected to the output terminal. For example, the second control signal can control the first selector 220 based on eight states of 000, 001, 010, 011, 100, 101, 110 and 111.

[0170] In some embodiments, when the first control signal and the second control signal have the same state, the preset gain obtained based on the first control signal and the temperature-controlled voltage generated based on the second control signal can satisfy that the reference voltage has a target voltage at the target temperature. Fig.11 The mapping relationship table shown in the figure configures the first control signal and the second control signal to be both in the 000 state, generating the first reference voltage Vref1. Specifically, the voltage generating circuit closes the pull-up switch S based on the 000 state of the first control signal. 31 And disconnect the pull-up control switch S 11 , S 12 , S 13 , S 14 , outputs a first temperature-controlled voltage Vt1; at the same time, the voltage amplifying circuit turns on the fourth input terminal and the output terminal of the first selector based on the 000 state of the second control signal to obtain a preset gain, and amplifies the first temperature-controlled voltage Vt1 to obtain a first reference voltage Vref1.

[0171] Similarly, the first control signal and the second control signal can be both in the 001 state, the 010 state, and the 011 state, and the second reference voltage Vref2, the third reference voltage Vref3, and the fourth reference voltage Vref4 are generated accordingly. The first control signal and the second control signal can be both in the 100 state, the 101 state, the 110 state, and the 111 state, and the fifth reference voltage Vref5, the sixth reference voltage Vref6, the seventh reference voltage Vref7, and the eighth reference voltage Vref8 are generated accordingly.

[0172] In some embodiments, the first control signal and the second control signal may be the same signal and may be generated by a signal generation module. In other embodiments, the first control signal and the second control signal may also be different signals, but when configured to have the same state, generate a reference voltage having a target voltage at a target temperature.

[0173] In some embodiments, the first control signal can be converted into a plurality of sub-control signals, each of which is used to control a pull-up switch or a control switch, and each of which has two states, 0 or 1. By way of example, the semiconductor device further includes a plurality of control signal conversion modules, each of which is connected to a switch, and the control signal conversion module can be a circuit composed of logic gates such as a NAND gate, an OR gate, and a NOT gate, and is used to convert the first control signal into different sub-control signals. For example, when the first control signal is 000, the first pull-up switch S 11 The connected control signal conversion module receives the signal 000 and outputs the signal 0 to control the first pull-up switch S 11 Disconnect; at the same time, with the first pull-up control switch S 31 The connected control signal conversion module receives the signal 000 and outputs the signal 0 to control the first pull-up control switch S 21 In this way, different switches can be controlled to be opened or closed based on the same first control signal. For example, each sub-control signal can be transmitted to the corresponding switch through an independent line.

[0174] In some embodiments, when the first control signal and the second control signal have different states, the preset gain obtained based on the first control signal and the temperature-controlled voltage generated based on the second control signal can satisfy that the reference voltage has a target voltage at the target temperature. In this case, the first control signal and the second control signal can be two different signals generated by two signal generation modules.

[0175] For example, Fig.11 As shown, the first control signal can be in the 000 state and the second control signal can be in the 100 state to generate a first reference voltage Vref1; the first control signal can be in the 001 state and the second control signal can be in the 101 state to generate a second reference voltage Vref2; the first control signal can be in the 010 state and the second control signal can be in the 110 state to generate a third reference voltage Vref3; the first control signal can be in the 011 state and the second control signal can be in the 111 state to generate a fourth reference voltage Vref4.

[0176] In some embodiments, the first control signal and the second control signal may be provided to the reference voltage generating circuit at the same time, or the first control signal may be provided before the second control signal, or the first control signal may be provided after the second control signal.

[0177] In some embodiments, the semiconductor device may be used at multiple target temperatures, and the target voltages required at different target temperatures are different. Therefore, the mapping relationship should also indicate the corresponding relationship between the target temperature, the target voltage, and the state of the pull-up switch, the pull-down switch, the pull-up control switch and / or the pull-down control switch, the resistance value of the first adjustment resistor, and the resistance value of the second adjustment resistor. According to the target voltage required by the device at the target temperature, the corresponding first control and second control signals can be selected based on the mapping relationship table and provided to the reference voltage generating circuit, so that the reference voltage with the required temperature coefficient and target voltage can be obtained, which can meet the needs of more diverse usage scenarios.

[0178] Fig.14 for Fig.10 Schematic diagram of another mapping relationship of the reference voltage generating circuit and the first control signal and the second control signal. Fig.13 Compared with the two, the corresponding voltage generation circuits remain unchanged, but Fig.14 The corresponding regulating resistor module of the voltage amplifier circuit includes a larger number of sub-regulating resistors to provide more different gains.

[0179] like Fig.14 As shown, the reference voltage generating circuit can provide Fig.13 The eight reference voltages with different temperature coefficients satisfying the target voltage of 1V at 85°C can also provide two reference voltages with different positive temperature coefficients satisfying the target voltage of 1.5V at 60°C (the ninth reference voltage Vref9, the tenth reference voltage Vref 10 ), and provide two different positive temperature coefficient reference voltages (eleventh reference voltage Vref) that meet the target voltage of 0.8V at 60°C 11 , twelfth reference voltage Vref 12 ), therefore, the number of sub-adjusting resistors in the adjusting resistor module and the number of input terminals of the first selector need to be adjusted. For example, Fig.14 As shown, the first selector adds a ninth input terminal, a tenth input terminal, an eleventh input terminal and a twelfth input terminal to generate Vref9 and Vref 10 、Vref 11 、Vref 12 It should be understood that Fig.14 The resistance configuration of the sub-regulator in the corresponding regulator module is different from Fig.13 The corresponding regulating resistor module, therefore, needs to reconfigure the connection relationship between the multiple input terminals of the first selector and the voltage dividing points in the regulating resistor module. It should also be noted that if the preset gains when two or more temperature voltages with different temperature coefficients are amplified to the target voltage are the same, the same input terminal of the first selector can be shared, thereby reducing the number of input terminals of the first selector.

[0180] In some embodiments, Fig.14 As shown, the number of states of the second control signal is greater than the number of states of the first control signal. The first control signal and the second control signal are different signals. For example, the first control signal requires a 3-bit width to control the voltage generating circuit to generate 8 temperature-controlled voltages Vt with different temperature coefficients. The second control signal requires a 4-bit width to provide 0000, 0001, 0010, 0011, 0100, 0101, 0110, 0111, 1000, 1001, 1010, 1011, a total of twelve states to select the gain of the voltage amplifier circuit, thereby providing twelve reference voltages Vref with different temperature coefficients. In some embodiments, the first selector may include three first-stage sub-selectors of four selections and one second-stage sub-selector of four selections, the input end of the first-stage sub-selector is connected to the voltage dividing point of the regulating resistor module, and its output end is connected to the input end of the second-stage sub-selector, and the output end of the second-stage sub-selector is connected to the in-phase input end of the amplifier.

[0181] In some embodiments, the mapping relationship table can be stored in the test machine, and a plurality of first control signals and second control signals can be provided to the reference voltage generation circuit during the test phase, so as to select the reference voltage that best matches the temperature coefficient of the component, so as to put the component in a better working state and improve the performance of the device. In some embodiments, the control signal conversion module can be located in the test machine to provide a plurality of sub-control signals and second control signals to the reference voltage generation circuit during the test phase.

[0182] In some other embodiments, the semiconductor device may further include: a control circuit, the mapping relationship table is stored in the control circuit, and the control circuit may select a suitable first control signal and a second control signal according to an instruction of a host or a controller to provide to a reference voltage generating circuit to obtain a desired reference voltage. In this case, the reference voltage generating circuit may include a control signal conversion module. Also exemplarily, the control signal conversion module may be included in the control circuit so that the control circuit provides a plurality of sub-control signals and the first control signal to the reference voltage generating circuit.

[0183] In addition, in some embodiments, the control circuit may be further connected to a reference voltage generating circuit, and the control circuit may select the most matching reference voltage by trial and error based on the feedback of the reference voltage.

[0184] The voltage amplifier circuit provided in the embodiment of the present disclosure can amplify the temperature control voltage according to the required target voltage to obtain the reference voltage. The voltage amplifier circuit can improve the driving capability and anti-noise performance of the reference voltage.

[0185] The reference voltage generating circuit provided by the embodiment of the present disclosure can be applied to semiconductor devices and can improve the performance of memory. The semiconductor device can be a memory, and the memory includes but is not limited to DRAM, NAND memory, phase change memory, ferroelectric memory, etc.

[0186] The above embodiments are merely illustrative of the principles and effects of the present disclosure, and are not intended to limit the present disclosure. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed in the present disclosure shall still be covered by the claims of the present disclosure.

Claims

1. A reference voltage generating circuit, characterized in that: include: A voltage generating circuit, comprising: a plurality of resistor modules connected in series, at least two ends of the resistor modules being connected in parallel with transistor modules; an output end, arranged between adjacent transistor modules, for outputting a temperature-controlled voltage; the voltage generating circuit determining a temperature coefficient of the temperature-controlled voltage based on a first parameter of the resistor module and a second parameter of the transistor module, the first parameter comprising an equivalent temperature coefficient, and the second parameter comprising a temperature coefficient of a threshold voltage of a transistor turned on in the transistor module; A voltage amplifying circuit is connected to the output end of the voltage generating circuit, and the voltage amplifying circuit is used to amplify the temperature-controlled voltage according to the temperature coefficient of the temperature-controlled voltage to obtain a reference voltage.

2. The reference voltage generating circuit according to claim 1, characterized in that: The voltage generating circuit comprises: a pull-up transistor module and a pull-down transistor module; The multiple resistance modules include: a pull-up resistance module connected in parallel with the pull-up transistor module and a pull-down resistance module connected in parallel with the pull-down transistor module; an output end of the voltage generating circuit is arranged between the pull-up resistance module and the pull-down resistance module.

3. The reference voltage generating circuit according to claim 2, characterized in that: The first parameter also includes an equivalent resistance value, and the second parameter also includes a channel width-to-length ratio of a transistor turned on in the transistor module; The voltage generating circuit is used to adjust at least one of the equivalent temperature coefficient, the equivalent resistance, the channel width-to-length ratio of the turned-on transistor, and the temperature coefficient of the threshold voltage of the turned-on transistor according to the first control signal to adjust the temperature coefficient of the temperature control voltage.

4. The reference voltage generating circuit according to claim 3, characterized in that: The equivalent temperature coefficient of each resistance module is equal.

5. The reference voltage generating circuit according to claim 4, characterized in that: The pull-up resistor module includes a plurality of pull-up resistors connected in series and / or in parallel, some of the pull-up resistors are correspondingly provided with pull-up switches, and each of the pull-up switches enables or disables the corresponding pull-up resistor based on the first control signal; wherein the temperature coefficients of the plurality of pull-up resistors are the same; and / or, The pull-down resistor module includes a plurality of pull-down resistors connected in series and / or in parallel, and some of the pull-down resistors are correspondingly provided with pull-down switches, and each of the pull-down switches enables or disables the corresponding pull-down resistor based on the first control signal; wherein the temperature coefficients of the plurality of pull-down resistors are the same.

6. The reference voltage generating circuit according to claim 3, characterized in that: The pull-up transistor module includes a plurality of pull-up transistors connected in parallel, each of the pull-up transistors is connected in series with a pull-up control switch, and the source and drain of each of the pull-up transistors that are turned on are connected to the two ends of the pull-up resistor module; wherein the channel width-to-length ratios of the plurality of pull-up transistors are different from each other; the pull-down transistor module includes a plurality of pull-down transistors connected in parallel, each of the pull-down transistors is connected in series with a pull-down control switch, and the source and drain of each of the pull-down transistors that are turned on are connected to the two ends of the pull-down resistor module; wherein the channel width-to-length ratios of the plurality of pull-down transistors are different from each other.

7. The reference voltage generating circuit according to claim 6, characterized in that: The absolute value of the threshold voltage of the pull-up transistor and the absolute value of the threshold voltage of the pull-down transistor both decrease as the temperature increases; or, An absolute value of the threshold voltage of the pull-up transistor and an absolute value of the threshold voltage of the pull-down transistor both increase as temperature increases.

8. The reference voltage generating circuit according to claim 6, characterized in that: The temperature coefficients of the threshold voltages of the plurality of pull-up transistors are substantially the same; The temperature coefficients of the threshold voltages of the plurality of pull-down transistors are substantially the same.

9. The reference voltage generating circuit according to claim 6, characterized in that: The gate of each pull-up transistor is connected to its drain, and the gate of each pull-down transistor is connected to its drain; and / or, the other end of the pull-up resistor module is used to receive the bandgap reference voltage, and the other end of the pull-down resistor module is connected to the ground; the pull-up transistor is a PMOS transistor, and the pull-down transistor is an NMOS transistor.

10. The reference voltage generating circuit according to claim 3, characterized in that: The first input end of the voltage amplifier circuit is connected to the output end of the voltage generating circuit, the first regulating resistor is connected in series between the second input end of the voltage amplifier circuit and its output end, and the second regulating resistor is connected in series between the second input end of the voltage amplifier circuit and the ground end; The voltage amplifier circuit is used to adjust the resistance value of the first adjustment resistor and / or the resistance value of the second adjustment resistor according to the second control signal, so as to adjust the gain of the temperature-controlled voltage by the voltage amplifier circuit to a preset gain, so that the reference voltage has a target voltage value at a target temperature; The second control signal is used to characterize the relationship between the preset gain and the temperature coefficient of the temperature control voltage.

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