Solar cell process passivation monitoring and repairing device

Abstract

The invention discloses a solar cell process passivation monitoring and repairing device, which relates to the technical field of crystalline silicon solar cell manufacturing, and comprises a test probe row, a roller slide platform, a data analysis system and a laser, the laser is a purple picosecond laser, the pulse energy density is 500W / cm < 2 >-8000W / cm < 2 >, the laser repetition frequency is 500KHz-2000KHz, and the pulse stability is less than 3% RMS. According to the invention, monitoring data is collected, an abnormal area and repair data are analyzed and fed back to the laser, the laser adopts laser with a certain pulse signal to carry out thermal processing, crystal lattices are enabled to vibrate orderly through thermal driving, and internal doping of polycrystalline silicon is redistributed, so that the purpose of repairing an abnormal silicon wafer is achieved. And the manufacturing cost of the solar cell is further reduced.

Description

Technical Field

[0001] The invention relates to the technical field of crystalline silicon solar cell manufacturing, in particular to a solar cell process passivation monitoring and repairing device. Background Art

[0002] With the continuous increase in global energy demand, the importance of solar photovoltaic power generation has become increasingly prominent. At the same time, the manufacturing cost control of solar cells has become increasingly urgent. The control of defective products in the manufacturing cost is particularly important. The stability of the process plays an important role in the manufacturing and research and development of solar cells. In the manufacturing process of solar cells, especially for the current mainstream TOPCon battery process, most of the processes use tubular equipment for diffusion, doping and vapor deposition. Tubular equipment will inevitably have abnormal temperature rise, abnormal gas flow and abnormal pressure in the process steps. These abnormal conditions will lead to problems such as poor uniformity of diffusion doping and vapor deposition thickness, which will lead to process defective products, and then lead to a significant increase in manufacturing costs.

[0003] At present, in the manufacturing process of solar cells, there are devices for monitoring and detecting semi-finished products. For example, the Chinese invention patent application with publication number CN116453967A discloses an optimized diffusion automated online square resistance test device and its use method. The test device includes a conveyor belt for conveying solar cells and a probe for testing; it also includes: a support frame, a guide plate and a support plate. The conveyor belt is installed and used through the support frame. The top of the support frame is fixed with a fixed block located on the outside of the conveyor belt. The top of the guide plate is directly fixedly connected to the support frame through the fixed block. The support plate is integrally welded to the upper side of the support frame. The inner side of the support plate is fixedly connected with a slide rail, and the inner side of the support plate is slidably connected with a slide frame, and the slide frame is located on the outside of the slide rail.

[0004] For example, the Chinese utility model patent with publication number CN213519907U discloses an online detection and transfer device for silicon wafers and a solar cell production line. The online detection and transfer device for silicon wafers includes: a laterally movable suction cup device for adsorbing and lifting silicon wafers; a thickness tester, installed on the suction cup device, for detecting the overall thickness of the adsorbed silicon wafers; a vibrator, installed on the suction cup device, for vibrating to separate silicon wafers adhered to the bottom of the adsorbed silicon wafers; and a liftable buffer table for receiving silicon wafers that fall from the suction cup device.

[0005] Existing monitoring devices, including the above-mentioned patent, only remove semi-finished products that are detected to be abnormal to avoid yield loss caused by their transmission downward, and do not have the function of repairing the removed semi-finished silicon wafers, and the effect of reducing the manufacturing cost of solar cells is limited. Summary of the invention

[0006] The object of the present invention is to provide a solar cell process passivation monitoring and repair device to solve the above-mentioned deficiencies in the prior art.

[0007] In order to achieve the above-mentioned purpose, the present invention provides the following technical solutions: a solar cell process passivation monitoring and repair device, including a test probe row and a roller carrier platform, and also including a data analysis system and a laser; the laser is an ultraviolet picosecond laser with a pulse energy density of 500W / cm2-8000W / cm2, a laser repetition frequency of 500KHz-2000KHz, and a pulse stability of <3%RMS.

[0008] As a preferred technical solution of the present invention, the test probe row includes a probe row unit and a passivation test unit; the probe row unit is used to collect square resistance data at different coordinate positions, and the passivation test unit tests its minority carrier lifetime through transient light injection and converts it into passivation data.

[0009] As a preferred technical solution of the present invention, the laser combines the passivation data and the square resistance data to perform data algorithm analysis to obtain the pulse energy and frequency data required for the abnormal coordinate area. The data obtained from the analysis is fed back to the laser. The laser uses a laser with a certain repetition frequency to perform thermal processing on the abnormal silicon wafer, that is, through thermal drive, the lattice vibrates in an orderly manner, thereby redistributing the internal doping of the polysilicon.

[0010] As a preferred technical solution of the present invention, the test probe array is distributed in a "U" shape, with the purpose of monitoring the square resistance data and passivation data of various positions of the silicon wafer.

[0011] As a preferred technical solution of the present invention, the passivation test unit irradiates the silicon wafer to be tested through a Flash pulse light source, and begins to generate electron-hole pairs in the semiconductor silicon wafer. The time from the beginning to the disappearance of the recombination of the battery hole pairs is the minority carrier lifetime, which is specifically expressed by the formula: 1 / τ_eff=2J0 / qn_i^2W×(Ndop+△n)+1 / τ_bulk, J0 is the saturation recombination current, q is the charge, ni is the intrinsic concentration, W is the thickness of the test silicon wafer, Ndop is the doping concentration, and Δn is the non-equilibrium carrier concentration.

[0012] As a preferred technical solution of the present invention, the data algorithm is: passivation test minority carrier lifetime 1 / τ_eff=2J0 / qn_i^2W×(Ndop+△n)+1 / τ_bulk to obtain τ at each coordinate 坐标 , and then test the R block resistance at each coordinate, judging by: 1.τ 坐标 <200us and R>60ohm / sq, laser thermal compensation is required; 2.τ 坐标 ≥200us and R>60ohm / sq or τ 坐标≥200us and R≤60ohm / sq do not require compensation; draw a compensation mapping diagram based on the above big data, and then feed it back to the laser for thermal processing compensation. Thermal compensation algorithm: Lpod=Nc*exp(-(E c -E f ) / k0*T)+Aτ 坐标 3 / 2 , Lpod is the laser energy density, Nc is the conduction band effective state density, EcEf is the Fermi level and intrinsic Fermi level of the conduction band, k0 is the Boltzmann coefficient, T is the doping temperature, and A is the laser coefficient.

[0013] As a preferred technical solution of the present invention, the laser includes a base located above the roller carrier platform, a first translation frame is arranged below the base for horizontal sliding along the X-axis direction, a second translation frame is arranged on the first translation frame for horizontal sliding along the Y-axis direction; and also includes a laser gun head that translates synchronously with the second translation frame.

[0014] As a preferred technical solution of the present invention, two parallel worms are rotatably mounted on the base, the worms are parallel to the X-axis direction, and a motor for driving the worms to rotate is installed at the position corresponding to each worm on the base; a vertical axis is rotatably mounted on the first translation frame, a worm wheel is fixedly mounted on the vertical axis, and the worm wheel is in a meshing state with the two worms.

[0015] As a preferred technical solution of the present invention, a gear is fixedly installed on the vertical shaft, and a rack parallel to the Y-axis direction is fixedly installed on the second translation frame; the gear and the rack are in a meshing state; the laser gun head is fixedly connected to the second translation frame through a bracket.

[0016] As a preferred technical solution of the present invention, a horizontal brush strip is fixedly installed at the bottom end of the vertical shaft, and bristles for cleaning the filter screen on the top of the laser gun head are arranged at the bottom of the brush strip.

[0017] In the above technical scheme, the present invention provides a solar cell process passivation monitoring and repair device, which collects monitoring data, analyzes abnormal areas and repair data and feeds back to the laser. The laser uses a laser with a certain pulse signal for thermal processing. The thermal drive makes the lattice vibrate in an orderly manner, and the internal doping of the polysilicon is redistributed, thereby achieving the purpose of repairing abnormal silicon wafers and further reducing the manufacturing cost of solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0019] Figure 1 Schematic diagram of the structure of the solar cell process passivation monitoring and repair device in the embodiment;

[0020] Figure 2 It is a schematic diagram of the structure of the test probe row in the embodiment;

[0021] Figure 3 A schematic diagram of the three-dimensional structure of a laser in an embodiment;

[0022] Figure 4 FIG. 4 is a front view of a laser in an embodiment.

[0023] Description of reference numerals:

[0024] 1. Test probe row; 101. Probe row unit; 102. Passivation test unit; 2. Roller carrier platform; 3. Data analysis system; 4. Laser; 401. Base; 402. First translation frame; 403. Second translation frame; 404. Laser gun head; 405. Worm; 406. Motor; 407. Vertical axis; 408. Worm wheel; 409. Gear; 410. Rack; 411. Bracket; 412. Brush bar. DETAILED DESCRIPTION

[0025] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings.

[0026] like Figure 1 As shown, this embodiment provides a solar cell process passivation monitoring and repair device, including a test probe row 1 and a roller carrier platform 2, and also includes a data analysis system 3 and a laser 4; after the cell to be tested undergoes diffusion, doping or vapor deposition processes, it is transferred on the roller carrier platform 2, and each cell must pass through the roller carrier platform 2. The test probe row 1 monitors the cell on the roller carrier platform 2, collects square resistance data at different coordinate positions, and tests its minority carrier lifetime through transient light injection and converts it into passivation data.

[0027] It should be noted that the laser 4 is an ultraviolet picosecond laser with a pulse energy density of 500W / cm2-8000W / cm2, a laser repetition frequency of 500KHz-2000KHz, and a pulse stability of <3%RMS.

[0028] like Figure 2As shown, the test probe row 1 includes a probe row unit 101 and a passivation test unit 102; the probe row unit 101 is used to collect square resistance data at different coordinate positions, and the passivation test unit 102 tests its minority carrier lifetime through transient light injection and converts it into passivation data; and the test probe row 1 is distributed in a "U" shape, with the purpose of monitoring the square resistance data and passivation data at various positions of the silicon wafer.

[0029] The laser 4 performs data algorithm analysis on the passivation data and the square resistance data to obtain the pulse energy and frequency data required for the abnormal coordinate area. The data obtained by the analysis is fed back to the laser 4. The laser 4 uses a laser with a certain repetition frequency to perform thermal processing on the abnormal silicon wafer, that is, through thermal drive, the lattice vibrates in an orderly manner, thereby redistributing the internal doping of the polysilicon.

[0030] It should be noted that the data algorithm described above is: passivation test minority carrier lifetime 1 / τ_eff=2J0 / qn_i^2W×(Ndop+△n)+1 / τ_bulk to obtain τ at each coordinate 坐标 , and then test the R block resistance at each coordinate, judging by:

[0031] 1. τ 坐标 <200us and R>60ohm / sq, laser thermal compensation is required;

[0032] 2. τ 坐标 ≥200us and R>60ohm / sq or τ 坐标 ≥200us and R≤60ohm / sq do not require compensation;

[0033] Draw the compensation mapping diagram based on the above big data, and then feed it back to the laser 4 for thermal processing compensation. The thermal compensation algorithm is: Lpod=Nc*exp(-(E c -E f ) / k0*T)+Aτ 坐标 3 / 2 , Lpod is the laser energy density, Nc is the conduction band effective state density, EcEf is the Fermi level and intrinsic Fermi level of the conduction band, k0 is the Boltzmann coefficient, T is the doping temperature, and A is the laser coefficient.

[0034] Working principle of test probe row 1: The passivation test unit 102 irradiates the silicon wafer to be tested through a Flash pulse light source, and begins to generate electron-hole pairs in the semiconductor silicon wafer. The time from the beginning to the disappearance of the battery hole pairs is the minority carrier lifetime. The specific expression formula is: 1 / τ_eff=2J0 / qn_i^2W×(Ndop+△n)+1 / τ_bulk, J0 is the saturation recombination current, q is the charge, ni is the intrinsic concentration, W is the thickness of the test silicon wafer, Ndop is the doping concentration, Δn is the non-equilibrium carrier concentration; the Flash light source pulse time is 5-20ms, and the light intensity is 1-100Suns.

[0035] It should be noted that the square resistance data R = ρL / S, ρ is the material resistivity, L is the length, S is the cross-sectional area, and for a square thin film material, R = ρ / d.

[0036] The specific working steps of the solar cell process passivation monitoring and repair device in this embodiment are as follows:

[0037] S1: After the diffusion, doping or vapor deposition process is completed, the cell is transferred on the roller carrier platform 2, and each cell must pass through the roller carrier platform 2; the cell is kept horizontal on the roller carrier platform 2, and the roller carrier platform 2 transports the cell at a uniform speed;

[0038] S2: After the roller carrier platform 2 transports the cell to a predetermined position, specifically the position below the test probe row 1, the test probe row 1 tests the cell to be tested, the probe row unit 101 presses down to collect square resistance data at different coordinate positions, and the passivation test unit 102 tests the minority carrier lifetime at different coordinate positions through transient light injection and converts it into passivation data;

[0039] S3: By summarizing and analyzing the square resistance data and passivation data at different coordinate positions on the battery cell, the coordinate area position and compensation data that need to be repaired are analyzed based on the uniformity image;

[0040] S4: Feedback the compensation data to the laser 4, and transport the cell to the position corresponding to the laser 4 through the roller carrier platform 2. The laser 4 will perform temperature compensation repair on the abnormal area according to the range of the coordinate area;

[0041] S5: The compensated and repaired battery cell is transported by the roller carrier platform 2 into the tooling tool and transferred to the downstream process.

[0042] like Figure 3As shown, in this embodiment, the laser 4 includes a base 401 located above the roller carrier platform 2, and the base 401 and the roller carrier platform 2 remain in a relatively static state, that is, there is a horizontal relative movement state between the base 401 and the battery cell on the roller carrier platform 2; a first translation frame 402 is horizontally slidably arranged along the X-axis direction below the base 401, and a second translation frame 403 is horizontally slidably arranged along the Y-axis direction on the first translation frame 402; the laser 4 also includes a laser gun head 404 that translates synchronously with the second translation frame 403.

[0043] Specifically, after the roller carrier platform 2 transports the battery cell to the position corresponding to the laser 4, the base 401 and the battery cell remain relatively stationary. In this state, the laser 4 adjusts the position of the laser gun head 404 according to the compensation mapping diagram, and performs temperature compensation repair on the position to be repaired on the battery cell; the steps for adjusting the position of the laser gun head 404 are as follows: first, under the action of external force, the first translation frame 402 drives the second translation frame 403 and the laser gun head 404 to move horizontally to a predetermined position along the X-axis direction relative to the battery cell, and remain relatively stationary with the battery cell; then, under the action of external force, the second translation frame 403 drives the laser gun head 404 to move horizontally to a predetermined position along the Y-axis direction relative to the battery cell, and remains relatively stationary with the battery cell; in this state, the laser gun head 404 reaches above the position to be repaired on the battery cell, and the laser gun head 404 can perform temperature compensation repair on the position to be repaired. In summary, the horizontal movement range of the laser gun head 404 covers the entire battery cell at a predetermined position, that is, the laser gun head 404 can reach any position above the battery cell at a predetermined position and repair any position of the battery cell.

[0044] like Figure 3 and Figure 4 As shown, two mutually parallel worms 405 are rotatably mounted on the base 401, and the worms 405 are parallel to the X-axis direction. A motor 406 for driving the worms 405 to rotate is installed at a position corresponding to each worm 405 on the base 401; a vertical shaft 407 is rotatably mounted on the first translation frame 402, and a worm wheel 408 is fixedly mounted on the vertical shaft 407, and the worm wheel 408 and the two worms 405 are in a meshing state; a gear 409 is fixedly mounted on the vertical shaft 407, and a rack 410 parallel to the Y-axis direction is fixedly mounted on the second translation frame 403; the gear 409 and the rack 410 are in a meshing state; the laser gun head 404 is fixedly connected to the second translation frame 403 through a bracket 411.

[0045] In this embodiment, the laser gun head 404 can be adjusted to any horizontal position by two motors 406. The principle is as follows: first, determine the horizontal position to be reached by adjusting the laser gun head 404, and then move the position of the first translation frame 402. Specifically, the two motors 406 are used to control the two worms 405 to rotate synchronously in the same direction and at the same speed. Since the worm wheel 408 and the two worms 405 are in a meshing state, and the worm wheel 408 cannot rotate relative to the first translation frame 402 under the force of the two worms 405, the worm wheel 408 will be driven by the two worms 405 to translate to one side along the X-axis direction, and the worm wheel 408 drives the vertical shaft 407, the first translation frame 402, and the second translation frame 403 and the laser gun head 404 are synchronously translated to one side along the X-axis direction; when the two worms 405 are rotating in the forward direction, the worm wheel 408 drives the vertical shaft 407, the first translation frame 402, the second translation frame 403 and the laser gun head 404 to be synchronously translated in the forward direction along the X-axis; when the two worms 405 are rotating in the reverse direction, the worm wheel 408 drives the vertical shaft 407, the first translation frame 402, the second translation frame 403 and the laser gun head 404 to be synchronously translated in the reverse direction along the X-axis; in this way, as long as the two motors 406 control the two worms 405 to rotate synchronously in the same direction and at the same speed, the laser gun head 404 can be adjusted to any position on the X-axis within a predetermined range; when the laser gun head 404 is translated After reaching the predetermined position on the X-axis, the two motors 406 control the two worms 405 to rotate synchronously in different directions and at the same speed, that is, one worm 405 rotates forward and the other worm 405 rotates reversely. At this time, the worm wheel 408 no longer translates along the X-axis direction, but drives the vertical shaft 407 and the gear 409 to rotate relative to the first translation frame 402 under the drive of the two worms 405. During the rotation of the gear 409, the rack 410 is driven to translate along the Y-axis direction. The rack 410 drives the second translation frame 403, the bracket 411 and the laser gun head 404 to translate synchronously along the Y-axis direction; the two worms 405 are named as worm No. 1 and worm No. 2. Specifically, when the No. 1 worm rotates forward and the No. 2 worm rotates reversely, , the rack 410, the second translation frame 403, the bracket 411 and the laser gun head 404 translate in the positive direction along the Y axis; when the No. 1 worm gear reverses and the No. 2 worm gear rotates forward, the rack 410, the second translation frame 403, the bracket 411 and the laser gun head 404 translate in the opposite direction along the Y axis; in this way, as long as the two motors 406 control the two worm gears 405 to rotate synchronously in different directions and at the same speed, the laser gun head 404 can be adjusted to any position on the Y axis within a predetermined range; in summary, by simply controlling the rotation direction of the two motors 406, the movement of the laser gun head 404 in the X-axis direction and the movement in the Y-axis direction can be realized successively, thereby adjusting the laser gun head 404 to a predetermined position.

[0046] It should be noted that, compared with the traditional double-screw positioning system, although two driving sources are also required in this embodiment, the two motors 406 in this embodiment are fixedly mounted on the base 401, and there is no need to install a driving device on the second translation frame 403. The two motors 406 do not need to move during the whole process, which saves the cost of wiring the motors 406. In the traditional double-screw positioning system, since there is a driving source on the mobile platform, the driving source needs to be separately wired to ensure that the cable that powers the driving source does not interfere with other parts during the movement, nor does it move to the bottom of the laser gun head 404 to block the operation of the laser gun head 404. This embodiment omits this wiring design, so the design and manufacturing costs of the equipment are reduced. In addition, in this embodiment, the worm wheel 408 is driven to translate and rotate by the double worm 405. Compared with the traditional single screw, when adjusting the X-axis direction and the Y-axis direction, the two motors 406 provide power in this embodiment, which makes the process of the laser gun head 404 in the X-axis direction and the Y-axis direction more stable and efficient.

[0047] like Figure 4 As shown, a horizontal brush strip 412 is fixedly installed at the bottom of the vertical shaft 407, and the bottom of the brush strip 412 is provided with bristles for cleaning the filter screen at the top of the laser gun head 404; since the laser gun head 404 will generate a high temperature when working, a fan for heat dissipation is provided inside it, and a heat dissipation hole and a filter screen are provided at the top of the laser gun head 404. The filter screen will filter the dust in the air, so dust will adhere to the filter screen; when the vertical shaft 407 rotates, the brush strip 412 also rotates synchronously, the rack 410, the second translation frame 403, the bracket 411 and the laser gun head 404 translate relative to the brush strip 412, and the bristles at the bottom of the brush strip 412 can clean the filter screen at the top of the laser gun head 404. In this way, when the laser gun head 404 is adjusted in the Y-axis direction in this embodiment, the filter screen at the top of the laser gun head 404 can also be automatically cleaned.

[0048] The above description is only by way of illustration of certain exemplary embodiments of the present invention. It is undoubted that those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the above drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. A solar cell process passivation monitoring and repair device, comprising a test probe row (1) and a roller carrier platform (2), characterized in that: It also includes a data analysis system (3) and a laser (4); the laser (4) is an ultraviolet picosecond laser with a pulse energy density of 500W / cm2-8000W / cm2, a laser repetition frequency of 500KHz-2000KHz, and a pulse stability of <3%RMS.

2. A solar cell process passivation monitoring and repair device according to claim 1, characterized in that: The test probe row (1) comprises a probe row unit (101) and a passivation test unit (102); the probe row unit (101) is used to collect square resistance data at different coordinate positions, and the passivation test unit (102) tests its minority carrier lifetime through transient light injection and converts it into passivation data.

3. A solar cell process passivation monitoring and repair device according to claim 2, characterized in that: The laser (4) performs a data algorithm analysis in combination with the passivation data and the square resistance data to obtain the pulse energy and frequency data required for the abnormal coordinate area. The data obtained by the analysis is fed back to the laser (4). The laser (4) uses a laser with a certain repetition frequency to perform thermal processing on the abnormal silicon wafer, that is, the lattice is caused to vibrate in an orderly manner through thermal drive, thereby redistributing the internal doping of the polysilicon.

4. A solar cell process passivation monitoring and repair device according to claim 3, characterized in that: The test probe row (1) is distributed in a "U" shape, and is intended to monitor the square resistance data and passivation data of each position of the silicon wafer.

5. A solar cell process passivation monitoring and repair device according to claim 4, characterized in that: The passivation test unit (102) irradiates the silicon wafer to be tested through a flash pulse light source, and starts to generate electron-hole pairs in the semiconductor silicon wafer. The time from the start to the disappearance of the recombination of the battery hole pairs is the minority carrier lifetime, which is specifically expressed by the formula: 1 / τ_eff=2J0 / qn_i^2W×(Ndop+Δn)+1 / τ_bulk, J0 is the saturation recombination current, q is the charge amount, ni is the intrinsic concentration, W is the thickness of the test silicon wafer, Ndop is the doping concentration, and Δn is the non-equilibrium carrier concentration.

6. A solar cell process passivation monitoring and repair device according to claim 3, characterized in that: The data algorithm is: passivation test minority carrier lifetime 1 / τ_eff=2J0 / qn_i^2W×(Ndop+△n)+1 / τ_bulk to obtain τ at each coordinate 坐标 , and then test the R block resistance at each coordinate, judging by: 1.τ 坐标 <200us and R>60ohm / sq, laser thermal compensation is required; 2.τ 坐标 ≥200us and R>60ohm / sq or τ 坐标 ≥200us and R≤60ohm / sq do not require compensation; draw a compensation mapping diagram based on the above big data, and then feed it back to the laser (4) for thermal processing compensation. The thermal compensation algorithm is: Lpod=Nc*exp(-(E c -E f ) / k0*T)+Aτ 坐标 3 / 2 , Lpod is the laser energy density, Nc is the conduction band effective state density, EcEf is the Fermi level and intrinsic Fermi level of the conduction band, k0 is the Boltzmann coefficient, T is the doping temperature, and A is the laser coefficient.

7. A solar cell process passivation monitoring and repair device according to claim 1, characterized in that: The laser (4) comprises a base (401) located above the roller carrier platform (2); a first translation frame (402) is arranged below the base (401) for horizontal sliding along the X-axis direction; a second translation frame (403) is arranged on the first translation frame (402) for horizontal sliding along the Y-axis direction; and a laser gun head (404) is also arranged for synchronous translation with the second translation frame (403).

8. A solar cell process passivation monitoring and repair device according to claim 7, characterized in that: Two mutually parallel worms (405) are rotatably mounted on the base (401), the worms (405) are parallel to the X-axis direction, and a motor (406) for driving the worms (405) to rotate is mounted at a position corresponding to each worm (405) on the base (401); a vertical shaft (407) is rotatably mounted on the first translation frame (402), a worm wheel (408) is fixedly mounted on the vertical shaft (407), and the worm wheel (408) and the two worms (405) are in a meshing state.

9. A solar cell process passivation monitoring and repair device according to claim 8, characterized in that: A gear (409) is fixedly mounted on the vertical shaft (407), and a rack (410) parallel to the Y-axis direction is fixedly mounted on the second translation frame (403); the gear (409) and the rack (410) are in a meshing state; and the laser gun head (404) is fixedly connected to the second translation frame (403) via a bracket (411).

10. A solar cell process passivation monitoring and repair device according to claim 9, characterized in that: A horizontal brush bar (412) is fixedly mounted at the bottom end of the vertical shaft (407), and bristles for cleaning the filter screen at the top of the laser gun head (404) are arranged at the bottom of the brush bar (412).

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