Preparation device of perovskite thin film

Abstract

The invention discloses a preparation device for a perovskite film, and the device comprises a main chamber which is used for forming vacuum; the rotating disc is rotationally arranged in the main chamber, is provided with a plurality of sample wafer placing through grooves which are distributed along the rotating direction of the rotating disc and is used for placing sample wafers; the plurality of sub-chambers are arranged in the main chamber, are communicated with the main chamber and are positioned below the turntable, the positions of the sub-chambers are in one-to-one correspondence with the positions of the sample wafer placing through grooves, each sub-chamber is used for carrying out different processes on the sample wafers at the corresponding positions above, one sub-chamber is a precursor solution spraying chamber, and the other sub-chamber is a precursor solution spraying chamber. The precursor solution spraying chamber is provided with a jet orifice for spraying a precursor solution on a sample wafer; the heating part is arranged at the position, corresponding to the precursor solution spraying chamber, in the main chamber, and the heating part is located above the rotating disc and used for heating the sample wafer located above the precursor solution spraying chamber; and the liquid supply assembly is located outside the main cavity, communicates with the jet orifice and is used for conveying the precursor solution to the jet orifice.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cell preparation, and in particular to a preparation device for a perovskite film. Background Art

[0002] Perovskite cells are a type of solar cell with the advantages of low cost and high photoelectric conversion efficiency. The perovskite film of the perovskite cell is the main light-absorbing material. Perovskite cells require samples to undergo multiple processes. Since the perovskite material needs to be isolated from water, oxygen and air impurities, the entire preparation process requires a complete vacuum system.

[0003] An existing perovskite battery preparation equipment places multiple process chambers tightly in a relatively concentrated space. Each chamber is equipped with its own independent vacuum system. Each process unit is still an independent operating system. It is necessary to use a robot to clamp the sample and transfer it between the intermediate transfer chamber and each process chamber. The transfer process is prone to fragmentation, which has high requirements on the transfer efficiency and stability of the robot. In addition, since the sample must pass through the intermediate transfer chamber for transfer every time when it is transferred between the process chambers, it not only increases the workload of the robot and increases the transfer time, but also it is difficult to maintain a high vacuum degree during the robot transmission process, which is easy to affect the thin film interface of the sample. Summary of the invention

[0004] The object of the present invention is to provide a device for preparing a perovskite film, so as to ensure the vacuum degree during the preparation process of the perovskite film and improve the preparation efficiency.

[0005] In a first aspect, the present invention provides a device for preparing a perovskite film, comprising:

[0006] A main chamber, wherein a vacuum is formed in the main chamber;

[0007] A turntable, rotatably disposed in the main chamber, the turntable having a plurality of sample placement slots arranged along the rotation direction of the turntable, the sample placement slots being used to place samples;

[0008] A plurality of sub-chambers are arranged in the main chamber and communicated with the main chamber, and are located below the turntable, the positions of the sub-chambers correspond one-to-one to the positions of the sample placement slots, and each of the sub-chambers is used to perform different processes on the sample at the corresponding position above, and one of the sub-chambers is a precursor solution spraying chamber, and the precursor solution spraying chamber has a spray port for spraying the precursor solution onto the sample;

[0009] A heating component is disposed in the main chamber at a position corresponding to the precursor solution spraying chamber, and the heating component is located above the turntable, and is used to heat the sample located above the precursor solution spraying chamber;

[0010] The liquid supply component is located outside the main chamber and is communicated with the injection port to transport the precursor solution to the injection port.

[0011] In some possible implementations, the liquid supply component includes:

[0012] A liquid container, located outside the main chamber, and used to contain the precursor solution;

[0013] A liquid supply tube, one end of which extends into the liquid container for connecting with the precursor solution, and the other end of which is connected with the injection port;

[0014] A carrier gas tube, one end of which is connected to the liquid container and the other end of which is used to introduce carrier gas. The carrier gas tube is used to deliver the precursor solution in the liquid container into the liquid supply tube through the carrier gas.

[0015] In some possible implementations, the liquid supply assembly further includes a compressed air pipe, one end of which is connected to the injection port, and the compressed air pipe is used to introduce high-pressure inert gas and atomize and spray the precursor solution at the injection port.

[0016] In some possible implementations, the injection port is an atomizing nozzle structure; or, an ultrasonic atomizing component is disposed in the injection port.

[0017] In some possible implementations, there are one or more liquid containers, and the multiple liquid containers contain different precursor solutions.

[0018] In some possible implementations, the liquid supply component further includes:

[0019] A first switch valve is arranged on the liquid supply pipe;

[0020] A second switch valve is arranged on the carrier gas pipe;

[0021] The third switch valve is arranged on the compressed air pipe.

[0022] In some possible implementations, the liquid supply component further includes:

[0023] The liquid valve is arranged on the liquid supply pipe and is located between the first switch valve and the injection port.

[0024] In some possible implementations, the liquid supply component further includes:

[0025] A first pressure-stabilizing valve, disposed on the carrier gas pipe;

[0026] And / or, a second pressure-stabilizing valve is arranged on the compressed air pipe.

[0027] In some possible implementations, the first switch valve, the second switch valve, and the third switch valve are manual valves or control valves.

[0028] In some possible implementations, the main chamber includes:

[0029] A cavity, wherein the top of the cavity has an opening;

[0030] The cavity cover and the sealing cover are arranged on the opening, and the heating component is arranged on the inner wall of the cavity cover.

[0031] In some possible implementations, the plurality of sub-chambers further include a thermal evaporation chamber, a physical vapor deposition chamber, and an atomic layer deposition chamber.

[0032] Compared with the prior art, the beneficial effects of the perovskite film preparation device provided in this application are:

[0033] The preparation device of perovskite film includes a main chamber, a turntable, multiple sub-chambers, a heating component and a liquid supply component; wherein, the main chamber is used to form a vacuum, the multiple sub-chambers are all located in the main chamber and are connected, and the multiple sub-chambers share a vacuum environment provided by the main chamber; the turntable is rotatably arranged in the main chamber, located above the multiple sub-chambers, and the turntable has multiple sample placement slots arranged along the rotation direction of the turntable, the sample placement slots are used to place samples, and the positions of the sub-chambers correspond to the positions of the sample placement slots one by one, and the sample placement slots are switched by the rotation of the turntable and transferred to the top of different sub-chambers, and each sub-chamber is used to perform different processes on the samples at the corresponding position above. Compared with the existing equipment, the multiple sub-chambers in the preparation device of the present application share a vacuum chamber, and the sample is transferred between different sub-chambers by the rotation of the turntable. There is no need to use a manipulator to clamp the sample for transfer between different process chambers and the intermediate transfer chamber, which saves the transfer time, improves the preparation efficiency, and does not cause fragments to the sample. The turntable has high rotation reliability and stability, and shares a vacuum chamber, which ensures the vacuum required for preparation during the sample transfer process. One of the sub-chambers is a precursor solution spray chamber, which has a nozzle for spraying the precursor solution onto the sample; the heating component is arranged at a position corresponding to the precursor solution spray chamber in the main chamber, and the heating component is located above the turntable, which is used to heat the sample located above the precursor solution spray chamber; the liquid supply component is located outside the main chamber, and the liquid supply component is connected to the nozzle, which is used to transport the precursor solution to the nozzle. The precursor solution is sprayed onto the sample through a spraying process, and is heated by a heating component to form a perovskite film. The spraying process has strong versatility, high material utilization rate, compatibility with the sample morphology, and is conducive to the preparation of large-size perovskite films. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0035] Figure 1 A partial structural schematic diagram of a perovskite film preparation device provided in an embodiment of the present invention;

[0036] Figure 2 A schematic structural diagram of a perovskite film preparation device provided in an embodiment of the present invention;

[0037] Figure 3 A schematic structural diagram of another device for preparing a perovskite film provided in an embodiment of the present invention;

[0038] Figure 4 Schematic diagram of the structure of a perovskite film preparation device including a cavity cover according to an embodiment of the present invention.

[0039] Figure numerals: 1 is the main chamber, 11 is the cavity, 12 is the chamber cover, 13 is the telescopic support rod, 2 is the turntable, 21 is the sample placement slot, 3 is the sub-chamber, 31 is the precursor solution spraying chamber, 32 is the atomic layer deposition chamber, 33 is the thermal evaporation chamber, 34 is the physical vapor deposition chamber, 4 is the heating component, 5 is the sample, 6 is the liquid supply assembly, 61 is the liquid valve, 62 is the first switch valve, 63 is the liquid supply pipe, 64 is the liquid container, 65 is the second switch valve, 66 is the pneumatic valve, 67 is the carrier gas pipe, 68 is the first pressure-stabilizing valve, 69 is the second pressure-stabilizing valve, 610 is the compressed air pipe, and 611 is the third switch valve. DETAILED DESCRIPTION

[0040] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0041] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0042] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. The meaning of "several" is one or more, unless otherwise clearly and specifically defined.

[0043] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by the terms "up", "down", "front", "back", "left", "right", etc. are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention.

[0044] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0045] like Figure 1 and Figure 2 As shown, an embodiment of the present invention provides a preparation device for a perovskite film, hereinafter referred to as the preparation device, which includes a main chamber 1, a turntable 2, a plurality of sub-chambers 3, a heating component 4 and a liquid supply assembly 6; wherein the main chamber 1 is a closed chamber, and the main chamber 1 is used to form a vacuum to provide a vacuum environment for the entire preparation device; the turntable 2 is rotatably arranged in the main chamber 1, and the turntable 2 can be a circular turntable, and the turntable 2 is driven to rotate by a rotation drive mechanism (such as a motor) located in the main chamber 1, and the turntable 2 rotates in a horizontal plane, and the turntable 2 has a plurality of sample placement slots 21 arranged along the rotation direction of the turntable 2, and the sample placement slots 21 pass through the upper and lower surfaces of the turntable 2, and the sample placement slots 21 are used to place a sample 5, and the sample 5 is positioned in the sample placement slots 21, and the lower surface of the sample 5 exposes the sample placement slots 21; a plurality of sub-chambers 3 are arranged in the main chamber 1, and the upper end of each sub-chamber 3 is open, It is connected to the main chamber 1, and the sub-chambers 3 are all located below the turntable 2. The positions of the sub-chambers 3 correspond one-to-one to the positions of the sample placement slots 21. Each sub-chamber 3 is used to perform different processes on the sample 5 at the corresponding position above. One of the sub-chambers 3 is a precursor solution spraying chamber 31. The precursor solution spraying chamber 31 has a spray port 311 for spraying the precursor solution onto the sample 5. The precursor solution spraying chamber 31 is used to prepare a perovskite film on the corresponding sample 5 above it; the heating component 4 is arranged at an upper position corresponding to the precursor solution spraying chamber 31 in the main chamber 1, and the heating component 4 is located above the turntable 2, and is used to heat the sample 5 located above the precursor solution spraying chamber 31; the liquid supply component 6 is located outside the main chamber 1, and the liquid supply component 6 is connected to the spray port 311 of the precursor solution spraying chamber 31, and is used to transport the precursor solution to the spray port 311.

[0046] When the preparation device is working, the sample 5 is placed in the sample placement slot 21 of the turntable 2, and the main chamber 1 is evacuated to meet the set vacuum degree requirements. Since each sub-chamber 3 is connected to the main chamber 1, each sub-chamber 3 also meets the vacuum degree requirements. The turntable 2 is started to rotate, and the turntable 2 drives the sample 5 to transfer above the corresponding openings of each sub-chamber 3, and completes the corresponding process at the corresponding sub-chamber 3. When one of the samples 5 is transferred to the top of the precursor solution spray chamber 31 with the turntable 2, the turntable 2 stops rotating, and the lower surface of the sample 5 is aligned with the upper opening of the precursor solution spray chamber 31, and the upper surface of the sample 5 is aligned with the heating component 4 above. Afterwards, the heating component 4 heats the sample to a set temperature, and delivers the precursor solution to the injection port 311 of the precursor solution spraying chamber 31 through the liquid supply component 6. The injection port 311 sprays the precursor solution onto the lower surface of the sample 5. Under the heating and temperature regulation of the heating component 4, the precursor solution forms a perovskite film on the lower surface of the sample 5.

[0047] It can be known from the structure and working process of the above-mentioned preparation device that, compared with the existing equipment, the multiple sub-chambers 3 in the preparation device of the present application share a vacuum chamber, and there is no need to set up a vacuum system separately for each. The structure is compact and simple, and the sample 5 is transferred between different sub-chambers 3 by the rotation of the turntable 2. There is no need to use a manipulator to clamp the sample for transfer between different process chambers and the intermediate transmission chamber, which saves transfer time and improves preparation efficiency. Since there is no need for a manipulator to clamp and transfer, the sample will not be fragmented, and the turntable 2 has high rotation reliability and stability. And sharing a vacuum chamber, the turntable 2 is located in the main chamber 1, and the vacuum required for preparation is guaranteed during the transfer of the sample 5. One of the sub-chambers 3 is a precursor solution spray chamber 31, and the liquid supply component 6 is located outside the main chamber, which is convenient for replacing or adding liquid outside the main chamber 1, and will not affect the normal operation and vacuum degree in the main chamber 1, ensuring the continuous preparation. The precursor solution is sprayed onto the sample 5 by a spraying process, and is heated by the heating component 4 to form a perovskite film. The spraying process has strong versatility, high material utilization rate, a wide range of applicability to sample morphology, is not limited to a specific morphology, and is conducive to the preparation of large-size perovskite films.

[0048] In some embodiments, the sample placement slot 21 on the turntable 2 is a stepped hole slot, the edge of the sample 5 is supported on the step, and the surrounding walls of the stepped hole slot can radially position the sample 5. In order to improve the firmness of the sample 5 in the sample placement slot 21, a clamp is provided at the sample placement slot 21 on the turntable 2 to press on the upper surface of the sample 5. The clamp can be a pressing piece that can rotate around one end. Before placing the sample 5 or when taking out the sample 5, the pressing piece is rotated into the surface of the turntable 2. After placing the sample 5, the pressing piece is rotated to the top of the sample 5 for pressing and fixing.

[0049] like Figure 2As shown, in some embodiments, the liquid supply assembly 6 includes a liquid container 64, a liquid supply pipe 63 and a carrier gas pipe 67; wherein the liquid container 64 can be a container such as a bottle or a can that can hold a perovskite precursor solution, and the liquid container 64 is located outside the main chamber 1 to facilitate replacement and addition of liquid; one end of the liquid supply pipe 63 extends into the liquid container 64 and is close to the bottom of the liquid container 64, located below the liquid surface, for connecting the precursor solution, and the other end of the liquid supply pipe 63 is sealed and connected to the injection port 311 It should be noted that the precursor solution spraying chamber 31 can be completely located in the main chamber 1. At this time, the other end of the liquid supply pipe 63 is sealed and passes through the main chamber 1 and is connected to the injection port 311. Alternatively, the precursor solution spraying chamber 31 can be partially located in the main chamber 1 and partially located outside the main chamber 1. The injection port 311 is located outside the main chamber 1. Then the other end of the liquid supply pipe 63 is directly connected to the injection port 311. As long as the precursor solution spraying chamber 31 is connected to the main chamber 1 and the vacuum degree is guaranteed, one end of the carrier gas pipe 67 is connected to the liquid container 64. It can extend a short distance from the top of the liquid container 64, or be connected to the side of the liquid container 64. As long as it can be inlet, the other end of the carrier gas pipe 67 is connected to the carrier gas source for introducing the carrier gas. The carrier gas is an inert gas and does not participate in the reaction. The carrier gas pipe 67 is used to press the precursor solution in the liquid container into the liquid supply pipe 63 through the carrier gas, and then send it to the injection port 311 for spraying.

[0050] The liquid supply assembly 6 uses the carrier gas delivered by the carrier gas pipe 67 to press the precursor solution in the liquid container 64 into the precursor solution spraying chamber 31 for spraying. Since the carrier gas is provided separately, it can be independently adjusted. Of course, the liquid supply assembly 6 can also directly supply liquid to the precursor solution spraying chamber 31 through the precursor liquid source.

[0051] In some embodiments, the liquid supply assembly 6 further includes a compressed air pipe 610, one end of which is connected to the injection port 311, and the other end of which is connected to a high-pressure inert gas source. The compressed air pipe 610 is used to introduce high-pressure inert gas and spray the precursor solution after atomizing it at the injection port 311. During operation, the high-pressure inert gas is introduced into the injection port 311 through the compressed air pipe 610, and the gas outlet direction of the compressed air pipe 610 may have an angle with the axis of the injection port 311, preferably vertical, so that the high-pressure inert gas impacts and atomizes the precursor solution introduced into the injection port 311, and finally the precursor solution is sprayed on the sample 5 in the form of atomized droplets, so that the liquid spraying is more uniform and the perovskite film formed is of better quality.

[0052] In other embodiments, the injection port 311 is an atomizing nozzle structure, that is, there is no need to set the compressed air pipe 610, but the injection port 311 is directly set as a mechanical atomizing nozzle structure, and the precursor solution naturally forms atomized droplets when passing through the atomizing nozzle structure. Alternatively, an ultrasonic atomizing component is provided in the injection port 311, and the ultrasonic atomizing component is used to ultrasonically atomize the precursor solution passing through the injection port 311 to form atomized droplets. Therefore, as long as atomized droplets can be formed and sprayed at the injection port 311, it is not limited to the forms listed in the above embodiments.

[0053] like Figure 2 As shown, in some possible implementations, the liquid supply assembly 6 includes a first switch valve 62, a second switch valve 65, a third switch valve 611 and a liquid valve 61 on the basis of including a liquid supply pipe 63, a carrier gas pipe 67 and a compressed gas pipe 610, wherein the first switch valve 62 is arranged on the liquid supply pipe 63, and is used for opening and closing the liquid supply pipe 63; the second switch valve 65 is arranged on the carrier gas pipe 67, and is used for opening and closing the carrier gas pipe 67; the third switch valve 611 is arranged on the compressed gas pipe 610, and is used for opening and closing the compressed gas pipe 610; the liquid valve 61 is arranged on the liquid supply pipe 63 and is located between the first switch valve 62 and the injection port 311, and is used for opening and closing the liquid supply pipe 63, and can prevent the gas of the compressed gas pipe from flowing back into the liquid container 64. In addition, a pneumatic valve 66 is also arranged on the carrier gas pipe to further control the opening and closing of the carrier gas pipe 67.

[0054] When working, first open the first switch valve 62 and the second switch valve 65, then open the pneumatic valve 66, the carrier gas enters the carrier gas pipe 67, and enters the liquid container 64, the carrier gas presses the precursor solution into the liquid supply pipe 63; then, open the third switch valve 611 and the liquid valve 61 in sequence, the high-pressure inert gas is transported to the injection port 311 through the compressed gas pipe 610, and impacts with the precursor solution at the injection port 311 to be atomized, the carrier gas presses the precursor solution into the precursor solution spray chamber 31, and the atomized droplets are evenly sprayed on the sample 5. The above valve group can realize the orderly control of each fluid.

[0055] Furthermore, in some embodiments, the liquid supply assembly 6 further includes a first pressure-stabilizing valve 68 and / or a second pressure-stabilizing valve 69, wherein the first pressure-stabilizing valve 68 is disposed on the carrier gas pipe 67; and the second pressure-stabilizing valve 69 is disposed on the compressed gas pipe 610. The flow rate of the carrier gas in the carrier gas pipe 67 is regulated by the first pressure-stabilizing valve 68, and the flow rate of the high-pressure inert gas in the compressed gas pipe 610 is regulated by the second pressure-stabilizing valve 69, so that the gas can be stably transported, thereby ensuring the continuity and stability of the preparation process.

[0056] For example, the first switch valve 62, the second switch valve 65 and the third switch valve 611 are manual valves or control valves. The control valves can be pneumatic valves, hydraulic valves or electric valves, etc. As long as the pipeline can be switched on and off, the control valves can realize automatic control, save manpower and control accurately.

[0057] like Figure 3 As shown, in some embodiments, the number of liquid containers 64 is one or more, and different precursor solutions are contained in the multiple liquid containers 64, which are respectively connected to the injection port 311. Correspondingly, each liquid container 64 is provided with a liquid supply pipe 63 and a carrier gas pipe 67, and the liquid supply pipe 63 and the carrier gas pipe 67 can be provided with the same valves as in the above embodiment to realize the separate liquid supply of each liquid container 64. Multiple liquid containers 64 can share a compressed air pipe 610, or multiple compressed air pipes 610 can be provided, as long as the liquid can be atomized. When the number of liquid containers 64 is one, the required precursor solution can be mixed in advance and placed in the liquid container 64, and sprayed on the sample 5 at one time to form a perovskite film. When the number of liquid containers 64 is multiple, different precursor solutions can be placed in each liquid container 64, and a multi-step spraying process can be realized, which is convenient for adjusting the perovskite component and improving the film formation quality of the perovskite film.

[0058] like Figure 1 and Figure 4 As shown, in some embodiments, the main chamber 1 includes a cavity 11 and a cavity cover 12, and the top of the cavity 11 has an opening; the cavity cover 12 is a sealing cover arranged on the opening, and for example, one side of the cavity cover 12 is flipped and connected to the cavity 11, and can be hinged, and the cavity cover 12 can be opened and closed by flipping, which is convenient for placing and removing various components inside the main chamber 1. Further, the cavity cover 12 can be flipped and supported by setting a telescopic support rod 13, so that it is convenient to stay in the open position stably and free your hands. Alternatively, the cavity cover 12 is an integral buckle cover arranged on the opening, which can be removed and covered as a whole. The size and shape of the opening and the cavity cover 12 are determined according to actual needs. For example, the size of the opening is larger than the size of the turntable 2, the cavity 11 is a rectangular cavity, and the opening and the cavity cover 12 are rectangular, or the opening and the cavity cover 12 are circular, etc. The heating component 4 can be arranged on the inner wall of the cavity cover 12, which has a compact structure and high integration. Of course, the heating component 4 can also be fixed separately at other positions of the main chamber 1 , as long as it corresponds to the top of the precursor solution spraying chamber 31 and can heat the sample 5 .

[0059] For example, the heating component 4 may be a heating wire or a heating disk, which heats the sample 5 to a set temperature through heat radiation.

[0060] like Figure 1As shown, in some embodiments, the multiple sub-chambers 3 also include a thermal evaporation chamber 33, a physical vapor deposition chamber 34 and an atomic layer deposition chamber 32, wherein the thermal evaporation chamber 33 can be used for the preparation process of the charge transport layer and the metal electrode layer; the physical vapor deposition (PVD) chamber can meet the needs of the process for the preparation of various thin films, such as transparent electrodes, metal electrodes, etc.; the atomic layer deposition (ALD) chamber can achieve atomic layer precision film thickness control, and can be used for the preparation of functional layers such as charge transport layers and insulating layers. Each sub-chamber 3 can complete the preparation of thin films of different functional layers, and the full vacuum one-time automatic preparation of the entire device can be realized through the program, effectively reducing manual operation and environmental pollution.

[0061] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0062] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A device for preparing a perovskite film, characterized in that: include: A main chamber, wherein a vacuum is formed in the main chamber; A turntable, rotatably disposed in the main chamber, the turntable having a plurality of sample placement slots arranged along the rotation direction of the turntable, the sample placement slots being used to place samples; A plurality of sub-chambers are arranged in the main chamber and communicated with the main chamber, and are located below the turntable, the positions of the sub-chambers correspond one-to-one to the positions of the sample placement slots, and each of the sub-chambers is used to perform different processes on the sample at the corresponding position above, and one of the sub-chambers is a precursor solution spraying chamber, and the precursor solution spraying chamber has a spray port for spraying the precursor solution onto the sample; A heating component is disposed in the main chamber at a position corresponding to the precursor solution spraying chamber, and the heating component is located above the turntable, and is used to heat the sample located above the precursor solution spraying chamber; The liquid supply component is located outside the main chamber and is connected to the injection port for delivering the precursor solution to the injection port.

2. The device for preparing a perovskite thin film according to claim 1, characterized in that: The liquid supply assembly comprises: A liquid container, located outside the main chamber, and used to contain the precursor solution; A liquid supply tube, one end of which extends into the liquid container for connecting with the precursor solution, and the other end of which is connected with the injection port; A carrier gas tube, one end of which is connected to the liquid container and the other end of which is used to introduce carrier gas. The carrier gas tube is used to deliver the precursor solution in the liquid container into the liquid supply tube through the carrier gas.

3. The device for preparing a perovskite thin film according to claim 2, characterized in that: The liquid supply assembly further includes a compressed air pipe, one end of which is connected to the injection port, and the compressed air pipe is used to introduce high-pressure inert gas and atomize and spray the precursor solution out of the injection port.

4. The device for preparing a perovskite thin film according to claim 1, characterized in that: The injection port is an atomizing nozzle structure; or, an ultrasonic atomizing component is arranged in the injection port.

5. The device for preparing a perovskite thin film according to claim 2, characterized in that: The number of the liquid containers is one or more, and the multiple liquid containers contain different precursor solutions.

6. The device for preparing a perovskite thin film according to claim 3, characterized in that: The liquid supply assembly also includes: A first switch valve is arranged on the liquid supply pipe; A second switch valve is arranged on the carrier gas pipe; The third switch valve is arranged on the compressed air pipe. The liquid valve is arranged on the liquid supply pipe and is located between the first switch valve and the injection port.

7. The device for preparing a perovskite thin film according to claim 6, characterized in that: The liquid supply assembly also includes: A first pressure-stabilizing valve is disposed on the carrier gas pipe; And / or, a second pressure-stabilizing valve is arranged on the compressed air pipe.

8. The device for preparing a perovskite thin film according to any one of claims 6 to 7, characterized in that: The first switch valve, the second switch valve and the third switch valve are manual valves or control valves.

9. The device for preparing a perovskite thin film according to any one of claims 1 to 7, characterized in that: The main chamber comprises: A cavity, wherein the top of the cavity has an opening; The cavity cover and the sealing cover are arranged on the opening, and the heating component is arranged on the inner wall of the cavity cover.

10. The device for preparing a perovskite thin film according to any one of claims 1 to 7, characterized in that: The multiple sub-chambers also include a thermal evaporation chamber, a physical vapor deposition chamber and an atomic layer deposition chamber.

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