Reconfigurable smart surface forming multiple resonances

Abstract

The present disclosure relates to a 5G communication system or a 6G communication system for supporting higher data rates beyond 4G communication systems such as Long Term Evolution (LTE). A unit cell of an RIS includes: a first conductive structure including a first element and a second element disposed below the first element; a second conductive structure including a third element and a fourth element disposed below the third element; and a switching circuit disposed between the first conductive structure and the second conductive structure. When a first RF signal from a first external device is incident on the unit cell, a second RF signal having a first resonant frequency is reflected on the basis of electrical paths formed in the first element and the third element, respectively. And a third RF signal having a second resonant frequency different from the first resonant frequency is reflected on the basis of electrical paths formed in the second element and the fourth element, respectively.

Description

Technical Field

[0001] The present disclosure relates to reconfigurable smart surfaces that form multiple resonances. Background Art

[0002] Considering the development of wireless communication from generation to generation, technologies have been developed mainly for services targeting humans, such as voice calls, multimedia services, and data services. Following the commercialization of 5G (5th generation) communication systems, the number of connected devices is expected to grow exponentially. These will be increasingly connected to communication networks. Examples of connected things can include vehicles, robots, drones, home appliances, displays, smart sensors connected to various infrastructures, construction machinery, and factory equipment. Mobile devices are expected to develop in various form factors, such as augmented reality glasses, virtual reality headsets, and hologram devices. In order to provide various services by connecting hundreds of billions of devices and things in the 6G (6th generation) era, efforts have been continuously made to develop improved 6G communication systems. For these reasons, 6G communication systems are called super 5G systems.

[0003] The 6G communication system, which is expected to be commercialized around 2030, will have a peak data rate of terabit (1,000 gigabit) per second (bps) and a radio latency of less than 100 μsec, and will therefore be 50 times faster and have 1 / 10 the radio latency of the 5G communication system.

[0004] To achieve such high data rates and ultra-low latency, 6G communication systems have been considered to be implemented in the terahertz (THz) band (e.g., 95 gigahertz (GHz) to 3THz band). It is expected that since the path loss and atmospheric absorption in the THz band are more serious than those in the mmWave band introduced in 5G, technologies capable of ensuring the signal transmission distance (i.e., coverage) will become more critical. As the main technologies for ensuring coverage, it is necessary to develop radio frequency (RF) elements, antennas, novel waveforms with better coverage than orthogonal frequency division multiplexing (OFDM), beamforming and massive multiple input multiple output (MIMO), full-dimensional MIMO (FD-MIMO), array antennas, and multi-antenna transmission technologies such as massive antennas. In addition, new technologies for improving THz band signal coverage have been discussed, such as metamaterial-based lenses and antennas, orbital angular momentum (OAM), and reconfigurable intelligent surfaces (RIS).

[0005] In addition, in order to improve spectrum efficiency and overall network performance, the following technologies have been developed for 6G communication systems: full-duplex technology for enabling uplink transmission and downlink transmission to use the same frequency resources at the same time; network technology for utilizing satellites, high altitude platform stations (HAPS), etc. in an integrated manner; improved network structure for supporting mobile base stations, etc. and realizing network operation optimization and automation, etc.; dynamic spectrum sharing technology via conflict avoidance based on spectrum usage prediction; use of artificial intelligence (AI) in wireless communication for improving the overall network operation by utilizing AI from the design stage of developing 6G and internalizing end-to-end AI support functions; and next-generation distributed computing technology for overcoming the limitations of UE computing capabilities through accessible ultra-high performance communication and computing resources on the network, such as mobile edge computing (MEC), cloud, etc. In addition, attempts to strengthen connectivity between devices, optimize networks, promote softwareization of network entities, and increase openness of wireless communications are continuing by designing new protocols to be used in 6G communication systems, developing mechanisms for realizing hardware-based security environments and secure use of data, and developing technologies for maintaining privacy.

[0006] Research and development of 6G communication systems in hyperconnectivity, including person-to-machine (P2M) and machine-to-machine (M2M), are expected to allow the next hyperconnectivity experience. Specifically, it is expected that services such as truly immersive extended reality (XR), high-fidelity mobile holograms, and digital replicas can be provided through 6G communication systems. In addition, services such as remote surgery, industrial automation, and emergency response for enhanced safety and reliability will be provided through 6G communication systems, so that these technologies can be applied to various fields such as industry, medical care, automobiles, and home appliances. Summary of the invention

[0007] Technical issues

[0008] When a unit cell of a reconfigurable smart surface (RIS) is designed so that a radio frequency (RF) signal to be reflected from the RIS has a single resonant frequency, a difference between a first phase of a first RF signal to be reflected when a switch circuit in the unit cell is turned on and a second phase of a second RF signal to be reflected when the switch circuit is turned off may vary according to an incident angle of the RF signal to be incident to the unit cell.

[0009] When the incident angle of the RF signal incident to the RIS is not about 90 degrees, the difference between the first phase of the first RF signal and the second phase of the second RF signal may not be about 180 degrees. When the phase difference between the first RF signal and the second RF signal is less than 180 degrees, the strength of the signal to be reflected from the RIS may decrease, and there may be a problem of deterioration of communication performance between the base station and the user equipment (UE).

[0010] Various embodiments of the present disclosure may include a conductive structure in which an RF signal to be reflected from a RIS has multiple resonant frequencies.

[0011] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments.

[0012] Solution to the problem

[0013] According to various embodiments of the present disclosure, a unit cell of a reconfigurable smart surface (RIS) may include: a first conductive structure including a first element and a second element disposed below the first element; a second conductive structure including a third element and a fourth element disposed below the third element; and a switching circuit disposed between the first conductive structure and the second conductive structure. When a first radio frequency (RF) signal from a first external device is incident (e.g., irradiated) on the unit cell, a second RF signal having a first resonant frequency may be reflected based on electrical paths formed in the first element and the third element, respectively, and a third RF signal having a second resonant frequency different from the first resonant frequency may be reflected based on electrical paths formed in the second element and the fourth element, respectively. The first element and the second element are electrically coupled to each other, and the third element and the fourth element are electrically coupled to each other.

[0014] According to various embodiments of the present disclosure, a RIS may include a first unit cell. The first unit cell may include: a first conductive structure including a first element and a second element disposed below the first element; a second conductive structure including a third element and a fourth element disposed below the third element; and a switch circuit disposed between the first conductive structure and the second conductive structure. When an RF signal from a first external device is incident on the first unit cell, a second RF signal having a first resonant frequency may be reflected based on electrical paths respectively formed in the first element and the third element, and a third RF signal having a second resonant frequency different from the first resonant frequency may be reflected based on electrical paths respectively formed in the second element and the fourth element. The first element and the second element are electrically coupled to each other, and the third element and the fourth element are electrically coupled to each other.

[0015] Advantageous Effects of the Invention

[0016] According to various embodiments of the present disclosure, a radio frequency (RF) signal to be reflected from an electronic device to an external device has multiple resonance points, thereby minimizing a phase error of the RF signal to be reflected.

[0017] According to various embodiments of the present disclosure, even if a base station and / or a user equipment (UE) moves its location, an electronic device may maintain wireless communication performance without a large loss of RF signals reflected from the electronic device.

[0018] Furthermore, various effects directly or indirectly understood by the present disclosure can be provided.

[0019] Before proceeding to the following detailed description, it may be helpful to set forth definitions of certain words and phrases used throughout this patent document: the terms "include" and "comprising" and their derivatives mean including but not limited to; the term "or" is inclusive, meaning and / or; the phrases "associated with" and "associated with" and their derivatives may mean including, included within, interconnected with, containing, contained within, connected to or connected with, coupled to or coupled with, communicable with, cooperating with, interleaved, juxtaposed, proximate to, bound to or bound with, having, having the property of, etc.; and the term "controller" means any device, system, or portion thereof that controls at least one operation, such device may be implemented in hardware, firmware, or software, or some combination of at least two thereof. It should be noted that the functionality associated with any particular controller may be centralized or distributed, whether locally or remotely.

[0020] In addition, the various functions described below may be implemented or supported by one or more computer programs, each of which is formed by a computer-readable program code and embodied in a computer-readable medium. The terms "application" and "program" refer to one or more computer programs, software components, instruction sets, processes, functions, objects, classes, instances, related data, or a portion thereof, suitable for implementation in a suitable computer-readable program code. The phrase "computer-readable program code" includes any type of computer code, including source code, object code, and executable code. The phrase "computer-readable medium" includes any type of medium that can be accessed by a computer, such as a read-only memory (ROM), a random access memory (RAM), a hard drive, a compact disk (CD), a digital video disk (DVD), or any other type of memory. "Non-transitory" computer-readable media excludes wired, wireless, optical, or other communication links that transmit temporary electrical or other signals. Non-transitory computer-readable media include media in which data can be permanently stored and media in which data can be stored and later rewritten, such as rewritable optical disks or erasable memory devices.

[0021] Definitions for certain words and phrases are provided throughout this patent document, those of ordinary skill in the art should understand that in many, if not most instances, such definitions apply to prior, as well as future uses of such defined words and phrases. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] For a more complete understanding of the present disclosure and its advantages, reference is now made to the following description taken in conjunction with the accompanying drawings, in which like reference numerals represent like parts:

[0023] Figure 1 shows a relationship between a reconfigurable smart surface (RIS), a first external device, and a second external device according to an embodiment;

[0024] Figure 2 shows a RIS according to an embodiment;

[0025] Figure 3 shows a first unit cell of a RIS according to an embodiment;

[0026] Figure 4 shows a cross section AA' of a first unit cell according to an embodiment;

[0027] Figure 5A shows an equivalent circuit diagram of a first unit cell when a switch circuit is in an ON state according to an embodiment;

[0028] Figure 5B shows an equivalent circuit diagram of a first unit cell when a switch circuit is in an OFF state according to an embodiment;

[0029] Figure 6 shows the reflected phase of an RF signal to be reflected by a RIS according to an embodiment;

[0030] Fig. 7A shows a reflection phase graph of a unit cell designed to have a single resonance point according to an embodiment;

[0031] Figure 7B shows a reflection phase curve diagram of a first unit cell designed to have multiple resonance points according to an embodiment;

[0032] Figure 8 shows a first polarized wave and a second polarized wave formed in a first element according to an embodiment;

[0033] Fig. 9 is a view for comparing a reflection phase difference in each of a unit cell designed to have a single resonance point and a first unit cell formed to have multiple resonance points according to an embodiment;

[0034] Fig.10 shows a first unit cell of a RIS according to an embodiment;

[0035] Fig.11 shows a first unit cell of a RIS according to an embodiment; and

[0036] Fig.12 A first unit cell and a second unit cell of a RIS according to an embodiment are shown.

[0037] With regard to the description of the drawings, the same or similar reference numerals may be used to refer to the same or similar elements. DETAILED DESCRIPTION

[0038] Discussed below Figures 1 to 12 The various embodiments used to describe the principles of the present disclosure in this patent document are illustrative only and should not be interpreted in any way to limit the scope of the present disclosure. Those skilled in the art will understand that the principles of the present disclosure can be implemented in any appropriately arranged system or device.

[0039] Hereinafter, various embodiments of the present disclosure are described with reference to the accompanying drawings. However, it should be understood that this is not intended to limit the technical features set forth herein to specific embodiments, and includes various modifications, equivalents and / or replacements of the embodiments of the present disclosure.

[0040] Figure 1 A relationship among a reconfigurable smart surface (RIS), a first external device, and a second external device according to an embodiment is shown.

[0041] refer to Figure 1 , the RIS 101 according to the embodiment may include a plurality of unit cells. In an embodiment, the RIS 101 may be implemented such that a plurality of unit cells are arranged. For example, the RIS 101 may include a first unit cell 111, a second unit cell 112, a third unit cell 113, a fourth unit cell 114, a fifth unit cell 115, and / or a sixth unit cell 116. In an example, the first unit cell 111, the second unit cell 112, the third unit cell 113, the fourth unit cell 114, the fifth unit cell 115, and the sixth unit cell 116 may be arranged in a row.

[0042] According to an embodiment, the first unit cell 111, the second unit cell 112, the third unit cell 113, the fourth unit cell 114, the fifth unit cell 115, and the sixth unit cell 116 arranged in a row may form a first array 110. In an embodiment, the RIS 101 may include a second array 120, a third array 130, a fourth array 140, a fifth array 150, and / or a sixth array 160 that are substantially equivalent to the first array 110. Therefore, with the arrangement of the first array 110, the second array 120, the third array 130, the fourth array 140, the fifth array 150, and the sixth array 160, the RIS 101 may be formed or implemented as an array having 6×6 unit cells.

[0043] According to an embodiment, the first external device 102 may transmit a radio frequency (RF) signal to the RIS 101. The RF signal incident from the first electronic device 102 toward the RIS 101 may be transmitted toward the second electronic device 103 by being reflected from the RIS 101. For example, the RF signal may be incident from the first external device 102 to the RIS 101 at a specific incident angle, and may be reflected to the second external device 103 at a specific reflection angle.

[0044] According to an embodiment, the first external device 102 may correspond to a base station (e.g., eNodeB, gNodeB). The second electronic device 103 may correspond to a user equipment (UE). In an embodiment, the RF signal transmitted by the first external device 102 to the RIS 101 (or the RF signal incident from the first electronic device 102 to the RIS 101) may correspond to a signal of a specific frequency band (e.g., above 24.25 GHz).

[0045] According to the embodiment, since the RF signal incident from the first external device 102 is transmitted to the second external device 103 by being reflected from the RIS 101, the second external device 103 can minimize signal loss. For example, when the RF signal is not reflected from the RIS 101, the RF signal may not be forwarded from the first external device 102 to the second external device 103 due to the communication environment or obstacles between the first external device 102 and the second external device 103. Specifically, when the RF signal is a signal of a specific frequency band (for example, above 24.25 GHz), the RF signal may be blocked by obstacles according to frequency characteristics. On the other hand, when the RIS 101 according to the embodiment is arranged between the first external device 102 and the second external device 103, and when the RIS 101 reflects the signal transmitted by the first external device 102 to the second electronic device 103, the signal blocking caused by the obstacles can be minimized. Therefore, the RF signal can be forwarded from the first external device 102 to the second external device 103 at a low loss rate.

[0046] Although in the present disclosure Figure 1 RIS 101 reflects an RF signal incident from a first external device 102 (eg, a base station) to a second external device 103 (eg, a UE), but this is only an example. In another embodiment, RIS 101 may reflect an RF signal incident from a second external device 103 (eg, a UE) to the first external device 102 (eg, a base station).

[0047] Although in the present disclosure Figure 1 RIS 101 is described as having an array of 6×6 unit cells, but this is only an example, and in another embodiment, RIS 101 may have an array of various unit cells. For example, RIS 101 may have an array of 8×6 unit cells. In addition, although Figure 1 RIS 101 is described as having a square unit cell, but this is only an example, and in another embodiment, RIS 101 may include unit cells of various sizes and / or shapes. For example, in another embodiment, the first unit cell and the second unit cell included in RIS 101 may have different sizes, and the first unit cell and the second unit cell may have different shapes.

[0048] The RIS 101 of the present disclosure may be replaced with a RIS device (or RIS equipment) or an electronic device. In addition, the RIS 101 of the present disclosure may be replaced with a RIS reflector and / or a RIS board. Figure 1 It is described that the unit cells arranged in the horizontal direction (eg, the x-axis direction) form one array and a plurality of arrays form the RIS 101, but this is merely to set the standard for convenience of description. Therefore, reference may be made to the present disclosure. Figure 1 It is described that the unit cells arranged in the vertical direction (e.g., the y-axis direction) form one array, and a plurality of arrays in the vertical direction form the RIS 101. In addition, the concept of an array formed by the unit cells of the present disclosure is for the convenience of description, and does not limit the present disclosure. In the absence of the concept of an array, it can be described as a concept in which the unit cells arranged according to specific columns and rows form one RIS 101. In addition, although it is described in the present disclosure that a plurality of unit cells form the RIS 101, this is only an example, and in another embodiment, the RIS 101 may be formed with only one unit cell.

[0049] Although reference is made to Figure 1 The concept that unit cells are arranged to implement or form the RIS 101 is described, but it may also be described as a concept that the RIS 101 includes at least one unit cell (eg, the first unit cell 111 , the second unit cell 112 ).

[0050] Figure 2 A RIS according to an embodiment is shown.

[0051] refer to Figure 2 , the RIS 101 according to an embodiment may include a plurality of unit cells 210 and / or at least one processor 220. In an embodiment, the plurality of unit cells 210 may include a first unit cell 211, a second unit cell 212, ..., an Nth unit cell.

[0052] According to an embodiment, at least one processor 220 may be electrically coupled to the plurality of unit cells 210. In an embodiment, the at least one processor 220 may control the operation of components in the plurality of unit cells 210. For example, each of the plurality of unit cells 210 may include a switching circuit for adjusting the phase of a signal to be reflected from the unit cell. In an embodiment, the at least one processor 220 may control the phase of the signal to be reflected from the unit cell by controlling the switching circuit, and thus, the direction of the RF signal to be reflected may be controlled. In an embodiment, the at least one processor 220 may include a communication processor and / or an application processor.

[0053] Although in the present disclosure Figure 2101, but this is only an example. In another embodiment, at least one processor 220 may be included in the first unit cell 211. In addition, although not disclosed in the present disclosure, Figure 2 Although not shown in FIG. 1 , RIS 101 may also include memory and / or a transceiver.

[0054] Figure 3 A first unit cell of a RIS according to an embodiment is shown.

[0055] refer to Figure 3 According to an embodiment, the first unit cell 211 may include a first conductive structure 310 , a second conductive structure 320 , a first conductive via 341 , a second conductive via 351 and / or a first switch circuit 350 .

[0056] According to an embodiment, the first conductive structure 310 may include a plurality of elements. For example, the first conductive structure 310 may include a first element 311, a second element 312, and a third element 313. In another embodiment, the first conductive structure 310 may include two elements. For example, the first conductive structure 310 may include a first element 311 and a second element 312.

[0057] According to an embodiment, the second element 312 may be located in a downward direction (eg, -z direction) of the first element 311. The third element 313 may be located in a downward direction (eg, -z direction) of the second element 312. Figure 3 3. In the embodiment, the first element 311, the second element 312 and the third element 313 are described as having substantially the same (or equal) size, but this is only an example. In another embodiment, the first element 311, the second element 312 and / or the third element 313 may have different sizes.

[0058] According to an embodiment, the second conductive structure 320 may include a plurality of elements. For example, the second conductive structure 320 may include a fourth element 324, a fifth element 325, and a sixth element 326. In another embodiment, the second conductive structure 320 may include two elements. For example, the second conductive structure 320 may include a fourth element 324 and a fifth element 325.

[0059] According to an embodiment, the fifth element 325 may be located in a downward direction (eg, -z direction) of the fourth element 324. The sixth element 326 may be located in a downward direction (eg, -z direction) of the fifth element 325. Figure 3 3. It is described that the fourth element 324, the fifth element 325 and the sixth element 326 have substantially the same size, but this is only an example. In another embodiment, the fourth element 324, the fifth element 325 and / or the sixth element 326 may have different sizes.

[0060] According to an embodiment, the first element 311, the second element 312, the third element 313, the fourth element 324, the fifth element 325 and / or the sixth element 326 may correspond to a conductive patch. However, this is only an example, and the elements included in the first conductive structure 310 and the second conductive structure 320 may correspond to various types of conductive structures other than the conductive patch.

[0061] According to an embodiment, elements included in first conductive structure 310 may be electrically coupled to each other through first conductive via 341. For example, first element 311, second element 312, and / or third element 313 may be electrically coupled to each other through first conductive via 341. In an embodiment, a first end of first conductive via 341 penetrating second element 312 may contact first element 311, and a second end opposite to the first end may contact third element 313.

[0062] According to an embodiment, elements included in second conductive structure 320 may be electrically coupled to each other through second conductive via 351. For example, fourth element 324, fifth element 325, and / or sixth element 326 may be electrically coupled to each other through second conductive via 351. In an embodiment, a third end of second conductive via 351 penetrating fifth element 325 may contact fourth element 324, and a fourth end opposite to the third end may contact sixth element 326.

[0063] According to an embodiment, at least one slot may be formed in an element of the first conductive structure 310. For example, a first slot 331 may be formed in the first element 311. A second slot 332 may be formed in the second element 312. A third slot 333 may be formed in the third element 313. In an embodiment, the first slot 331, the second slot 332, and the third slot 333 may have different sizes. For example, the first slot may have a first size S1. The second slot 332 may have a second size S2. The third slot 333 may have a third size S3. In an example, the first size S1 may be smaller than the second size S2. The second size S2 may be smaller than the third size S3.

[0064] Figure 3 The slot described in is a term used to designate a portion that is pierced or recessed in a specific object, and can be replaced with substantially the same or similar terms. For example, Figure 3 The slots described in the foregoing can be replaced with holes, openings and / or pits. For example, the first slot 331 can be replaced with a first hole. As another example, the first slot 331 can be replaced with a first opening.

[0065] Despite Figure 33 and 4, respectively, describe an embodiment in which the first size S1 of the first slot 331, the second size S2 of the second slot 332, and the third size S3 of the third slot 333 increase in this order, but this is only an example. In another embodiment, the first size S1, the second size S2, and the third size S3 may decrease in this order. In another embodiment, the first size S1 may be larger than the second size S2. The first size S1 may be smaller than the third size S3.

[0066] According to an embodiment, at least one slot may be formed in an element of the second conductive structure 320. For example, a fourth slot 334 may be formed in the fourth element 324. A fifth slot 335 may be formed in the fifth element 325. A sixth slot 336 may be formed in the sixth element 326. In an embodiment, the fourth slot 334, the fifth slot 335, and the sixth slot 336 may have different sizes. For example, the first slot may have a fourth size S4. The fifth slot 335 may have a fifth size S5. The sixth slot 336 may have a sixth size S6. In an example, the fourth size S4 may be smaller than the fifth size S5. The fifth size S5 may be smaller than the sixth size S6.

[0067] Despite Figure 3 334, the fifth dimension S5 of the fifth slot 335, and the sixth dimension S6 of the sixth slot 336 increase in this order, but this is only an example. In another embodiment, the fourth dimension S4, the fifth dimension S5, and the sixth dimension S6 may decrease in this order. In another embodiment, the fourth dimension S4 may be greater than the fifth dimension S5. The fourth dimension S4 may be smaller than the sixth dimension S6.

[0068] According to an embodiment, the first switch circuit 350 may be disposed between the first conductive structure 310 and the second conductive structure 320. For example, the first switch circuit 350 may be disposed between the first element 311 and the fourth element 324. In an embodiment, the first switch circuit 350 may include at least one switch.

[0069] According to an embodiment, the first switch circuit 350 may electrically couple the first conductive structure 310 and the second conductive structure 320. For example, the at least one processor 220 may be electrically coupled to the first switch circuit 350. The at least one processor 220 may control the first switch circuit 350 so that the first conductive structure 310 and the second conductive structure 320 are electrically coupled.

[0070] According to an embodiment, the first switch circuit 350 may electrically couple the first element 311 of the first conductive structure 310 and the fourth element 324 of the second conductive structure 320. The first conductive structure 310 may be electrically coupled through the first conductive via 341. The second conductive structure 320 may be electrically coupled through the second conductive via 351. Therefore, elements of the first conductive structure 310 and elements of the second conductive structure 320 may be electrically coupled through the first switch circuit 350.

[0071] According to an embodiment, a first RF signal 371 may be incident from a first external device 102 (e.g., a base station) to the first unit cell 211 of the RIS 101. In an embodiment, at least one electrical path (e.g., an electrical path 372) may be formed in the first conductive structure 310 and the second conductive structure 320 by the first RF signal 371. In an embodiment, a second RF signal 373 may be formed based on the at least one electrical path (e.g., the electrical path 372), and the formed second RF signal 373 may be reflected to a second external device (e.g., a UE).

[0072] According to an embodiment, the second RF signal 373 having a multi-resonance frequency may be reflected by the first conductive structure 310 and the second conductive structure 320. For example, when the first RF signal 371 from the first external device 102 is incident on the first unit cell 211, the RF signal having the first resonant frequency may be reflected based on the electrical paths respectively formed in the first element 311 and the fourth element 324. In an example, when the first RF signal 371 is incident on the first unit cell 211, the RF signal having the second resonant frequency may be reflected based on the electrical paths respectively formed in the second element 312 and the fifth element 325. In an example, when the first RF signal 371 is incident on the first unit cell 211, the RF signal having the third resonant frequency may be reflected based on the electrical paths respectively formed in the third element 313 and the sixth element 326. Therefore, the second RF signal 373 having a multi-resonance frequency may be reflected from the first conductive structure 310 and the second conductive structure 320 by the first RF signal 371 incident to the first unit cell 211.

[0073] The expression of "incident" or "reflected" may be replaced with "transmitted" or "forwarded". For example, the first RF signal 371 may be transmitted or forwarded from the first external device 102 (e.g., a base station) to the first unit cell 211 of the RIS 101. As another example, the second RF signal 373 formed based on at least one electrical path (e.g., the electrical path 372) may be transmitted or forwarded to the second external device 103 (e.g., a UE).

[0074] According to an embodiment, the at least one processor 220 may control the first switch circuit 350 to control the phase of the second RF signal 373 reflected from the first unit cell 211 to the second external device 103. For example, the at least one processor 220 may control the first switch circuit 350 so that the first conductive structure 310 and the second conductive structure 320 are not electrically coupled. In an example, the second RF signal 373 to be reflected to the second external device 103 may have a first phase.

[0075] As another example, the at least one processor 220 may control the first switch circuit 350 so that the first conductive structure 310 and the second conductive structure 320 are electrically coupled. In an example, since the first conductive structure 310 and the second conductive structure 320 are electrically coupled, the second RF signal 373 to be reflected to the second external device 103 may have a second phase. In an example, the second phase may be different from the first phase. For example, the second phase may differ from the first phase by about 180 degrees.

[0076] According to an embodiment, the at least one processor 220 may control the first switch circuit 350 to control the phase of the RF signal to be reflected from the RIS 101. Therefore, the at least one processor 220 may adjust the reflection direction of the RF signal to be reflected by controlling the phase.

[0077] Although the present disclosure has been described based on the first unit cell 211 Figure 3 , but this is just an example for ease of description. Therefore, Figure 3 The description is not limited to the first unit cell 211. For example, Figure 3 The description can be applied to at least one unit cell. For example, Figure 3 The description of can also be applied to the second unit cell 212 .

[0078] Although in the present disclosure Figure 3, it is described that the first conductive structure 310 and the second conductive structure 320 are electrically coupled by the first switch circuit 350, but this is only an example. In another embodiment, the RIS 101 or the first unit cell 211 may include a first switch circuit electrically coupling the first element 311 and the fourth element 324, a second switch circuit electrically coupling the second element 312 and the fifth element 325, and a third switch circuit electrically coupling the third element 313 and the sixth element 326. For example, the first switch circuit may be turned on under the control of at least one processor 220, and the first element 311 and the fourth element 324 may be electrically coupled. In an example, the second switch circuit may be turned on, and the second element 312 and the fifth element 325 may be electrically coupled. In an example, the third switch circuit may be turned on, and the third element 313 and the sixth element 326 may be electrically coupled. The first conductive structure 310 may be inter-coupled, and the second conductive structure 320 may be inter-coupled. Therefore, all elements of the first conductive structure 310 and elements of the second conductive structure 320 may be electrically coupled through the first switch circuit, the second switch circuit, and the third switch circuit.

[0079] As another example, the first switch circuit may be disconnected under the control of at least one processor 220, and the first element 311 and the fourth element 324 may not be electrically coupled. In an example, the second switch circuit may be disconnected, and the second element 312 and the fifth element 325 may not be electrically coupled. In an example, the third switch circuit may be disconnected, and the third element 313 and the sixth element 326 may not be electrically coupled. Therefore, since the first switch circuit, the second switch circuit, and the third switch circuit are disconnected, the elements of the first conductive structure 310 may not be electrically coupled to the elements of the second conductive structure 320.

[0080] The conductive structure of the present invention may be referred to as a hardware component. The conductive structure of the present disclosure may be referred to as a component including conductive materials.

[0081] The conductive structure of the present disclosure can be replaced by various terms referring to objects including conductive materials. For example, the conductive structure can be replaced by a conductive plate, a conductive patch, or a reflector including conductive materials. As another example, the conductive structure can be replaced by an antenna or a radiator.

[0082] Elements included in the conductive structure of the present invention may be referred to as hardware components. Elements of the present disclosure may be referred to as components including conductive materials.

[0083] The elements of the present disclosure are included in the conductive structure and can be replaced with various terms referring to objects including conductive materials. For example, the first element included in the first conductive structure can be replaced with a first conductive plate, a first conductive patch, or a first reflector including conductive materials. As another example, the element can be replaced with an antenna element or a radiator.

[0084] Although the present disclosure has been described Figure 3 The element described in has a rectangular patch shape, but this is only an example. Figure 3 The elements described in the embodiment may have various shapes. For example, the elements may have various shapes such as a triangle, a circle, a trapezoid, an ellipse, or a polygon. For example, the first element 311 included in the first conductive structure 310 may have a circular shape.

[0085] In addition, each element of the present disclosure may have a different shape. For example, the first element 311 included in the first conductive structure 310 may have a circular shape, and the second element 312 may have a rectangular shape. For example, the first element 311 included in the first conductive structure 310 may have a circular shape, and the fourth element 324 included in the second conductive structure 320 may have a rectangular shape.

[0086] Figure 4 A cross section AA' of a first unit cell according to an embodiment is shown.

[0087] refer to Figure 4 , the first unit cell 211 according to an embodiment may include a ground 410 and a dielectric 420 to which the first conductive structure 310 and the second conductive structure 320 are provided.

[0088] According to an embodiment, the ground 410 may include a conductive material. At least one processor 220 may be disposed on one surface of the ground 410. In an embodiment, the at least one processor 220 may be electrically coupled to the first switch circuit 350. The at least one processor 220 may control the first switch circuit 350 so that the first conductive structure 310 and the second conductive structure 320 are electrically coupled or electrically decoupled. For example, when the first switch circuit 350 is turned on (or short-circuited), the first conductive structure 310 and the second conductive structure 320 may be electrically coupled. As another example, when the first switch circuit 350 is turned off (or open-circuited), the first conductive structure 310 and the second conductive structure 320 may be electrically decoupled.

[0089] According to an embodiment, the first conductive structure 310 may be sequentially arranged in a first direction (e.g., +z direction). For example, the first element 311 may be located in a first direction (e.g., +z direction) of the second element 312, and the second element 312 may be located in a first direction (e.g., +z direction) of the third element 313. In an embodiment, the second conductive structure 320 may be sequentially arranged in a first direction (e.g., +z direction). For example, the fourth element 324 may be located in a first direction (e.g., +z direction) of the fifth element 325, and the fifth element 325 may be located in a first direction (e.g., +z direction) of the sixth element 326.

[0090] According to an embodiment, the first conductive structure 310 and / or the second conductive structure 320 may be at least partially disposed inside or on the dielectric 420. For example, the first element 311 and the fourth element 324 may be disposed on the dielectric 420. As another example, the second element 312, the third element 313, the fifth element 325, and the sixth element 326 may be disposed inside the dielectric 420. In an embodiment, the dielectric 420 may have a specific dielectric constant Zg.

[0091] In another embodiment, both the first conductive structure 310 and the second conductive structure 320 may be disposed inside the dielectric 420 .

[0092] According to an embodiment, the resonance frequency of the RF signal to be reflected to the second external device 103 may vary according to the dielectric constant Zg of the dielectric 420 .

[0093] According to an embodiment, the capacitor component 430 is used to represent the capacitance formed between the first conductive structure 310 of the first unit cell 211 and the conductive structure of the unit cell adjacent to the first unit cell 211. In addition, the inductor component 440 is used to represent the inductance formed in the first element 311, the second element 312, and the third element 313. Figure 3 Only the inductor component of the first conductive structure 310 is shown, but this is for the convenience of description, and the second conductive structure 320 may also include an inductor component.

[0094] Figure 5A and Figure 5B FIG. 1 shows an equivalent circuit diagram of a first unit cell depending on the on / off state of a switching circuit according to an embodiment. Specifically, Figure 5A An equivalent circuit diagram of a first unit cell when a switch circuit is in an ON state according to an embodiment is shown. Figure 5B FIG. 4 shows an equivalent circuit diagram of a first unit cell when a switch circuit is in an OFF state according to an embodiment.

[0095] refer to Figure 5A and Figure 5B, shows an equivalent circuit diagram of the first unit cell 211 when the first switch circuit 350 according to the embodiment is turned on (or short-circuited) so that the first conductive structure 310 and the second conductive structure 320 are electrically coupled. The first element 311, the second element 312, the third element 313, the fourth element 324, the fifth element 325, and the sixth element 326 can be represented by an inductance component. In addition, the capacitance component between the element of the first unit cell 211 and the element of the unit cell adjacent to the first unit cell 211 can be interpreted as a first capacitance component 530. The dielectric constant of the dielectric 420 can be represented by Zg.

[0096] The equivalent circuit diagram of the first unit cell 211 is shown when the first switch circuit 350 according to the embodiment is disconnected (or open circuit) and thus the first conductive structure 310 and the second conductive structure 320 are not electrically coupled. The capacitance component between the element of the first unit cell 211 and the element of the unit cell adjacent to the first unit cell 211 can be interpreted as a first capacitance component 530. The first element 311, the second element 312, the third element 313, the fourth element 324, the fifth element 325 and the sixth element 326 can be interpreted as an inductance component. The capacitance component between the first conductive structure 310 and the second conductive structure 320 can be represented by a second capacitance component 540.

[0097] Figure 6 The reflected phase of an RF signal to be reflected by a RIS according to an embodiment is shown.

[0098] refer to Figure 6 , the first graph 601 according to the embodiment is a graph of a reflection phase graph depending on the frequency of the second RF signal to be reflected from the RIS 101 when the first RF signal is incident from the first external device 102 .

[0099] According to an embodiment, the second RF signal to be reflected from the RIS 101 may have a reflection phase of about 0 degrees, and may have a resonance frequency corresponding to the resonance point 611. For example, assuming that there is no additional conductor structure in the RIS 101, the reflection phase of the second RF signal to be reflected from the RIS 101 when the first RF signal is incident from the first external device 102 may have a phase of about 180 degrees or about -180 degrees. In an embodiment, a point at which the second RF signal has a reflection phase of about 180 degrees may be referred to as a first reflection point 621, and a point at which the second RF signal has a phase of about -180 degrees may be referred to as a second reflection point 622. On the other hand, the RIS 101 according to an embodiment may include a first conductive structure 310 and a second conductive structure 320, and each of the elements of the first conductive structure 310 and the second conductive structure 320 may be designed so that the second RF signal to be reflected has a signal of a specific frequency band (e.g., 28 GHz). Therefore, the phase of the second RF signal to be reflected from the RIS 101 may have a phase of 0 degrees, and may have a resonance frequency corresponding to the resonance point 611.

[0100] According to an embodiment, the resonance point 611 may be located between the first reflection point 621 and the second reflection point 622. In an embodiment, the resonance point 611 may be adjusted in such a manner that conductor structures (e.g., the first conductive structure 310 and the second conductive structure 320) of a unit cell (e.g., the first unit cell 211) included in the RIS 101 are differently designed.

[0101] Fig. 7A and Figure 7B 1 is a view for comparing a reflection phase curve diagram of a unit cell designed to have a single resonance point according to an embodiment and a reflection phase curve diagram of a first unit cell designed to have multiple resonance points. Specifically, Fig. 7A A reflection phase graph of a unit cell designed to have a single resonance point according to an embodiment is shown. Figure 7B A reflection phase curve diagram of a first unit cell designed to have multiple resonance points according to an embodiment is shown.

[0102] refer to Fig. 7A and Figure 7B , shows a reflection phase graph depending on frequency when the unit cell according to the embodiment is designed so that the RF signal to be reflected from the unit cell has a single resonance point. In the embodiment, the reflection phase graph of the RF signal can be shown differently according to the incident angle of the RF signal to be incident on the RIS 101. For example, the first graph 701 is a reflection phase graph of the RF signal to be reflected from the RIS 101 when the switching circuit of the unit cell having a single resonance point is turned on. In the example, a plurality of reflection phase graphs are shown according to the change of the incident angle of the RF signal to be incident on the RIS 101.

[0103] As another example, the second graph 702 is a reflection phase graph of an RF signal to be reflected from the RIS 101 when the switch circuit of the unit cell is turned off. In the example, a plurality of reflection phase graphs depending on changes in the incident angle of the RF signal to be incident to the RIS 101 are shown.

[0104] According to an embodiment, a first graph 701 having various changes at a target frequency (e.g., about 28 GHz) is shown. Likewise, a second graph 702 having various changes at a target frequency (e.g., about 28 GHz) is shown. In an embodiment, in order to adjust the reflection direction of the second RF signal by adjusting the phase of the second RF signal to be reflected from the RIS, the first graph 701 and the second graph 702 may have to be different by about 180 degrees. However, since each of the first graph 701 and the second graph 702 has a large change depending on the incident angle to the RIS 101, it may be difficult for the graphs to have a difference of about 180 degrees.

[0105] Therefore, in the case of a unit cell designed to have a single resonance point, the intensity of the second RF signal to be reflected may be attenuated according to the incident value of the first RF signal to be incident to the RIS 101 at a target frequency band (e.g., about 28 GHz). For example, if the first RF signal is incident to the RIS 101 vertically, the second RF signal to be reflected from the RIS 101 may be transmitted to the second external device 103 (e.g., UE) at a specific intensity. On the other hand, if the first RF signal is incident to the RIS 101 at a specific reflection angle (e.g., about 45 degrees), the second RF signal to be reflected from the RIS 101 may be transmitted to the second external device 103 at an intensity lower than the specific intensity. In an example, the specific intensity may mean an intensity configured to achieve communication or a target intensity.

[0106] refer to Fig. 7A and Figure 7B , shows a reflection phase graph depending on frequency when the first unit cell 211 according to the embodiment is designed so that the second RF signal to be reflected from the first unit cell 211 has multiple resonance points. In the embodiment, the reflection phase graph of the second RF signal to be reflected may be shown differently according to the incident angle of the first RF signal to be incident to the RIS 101. For example, the third graph 703 is a reflection phase graph of the second RF signal to be reflected from the RIS 101 when the first switching circuit 350 of the first unit cell 211 is turned on. In the example, a plurality of reflection phase graphs depending on the change of the incident angle of the first RF signal to be incident on the RIS 101 are shown.

[0107] As another example, the fourth graph 704 is a reflection phase graph of the second RF signal to be reflected from the RIS 101 when the first switch circuit 350 of the first unit cell 211 is turned off. In the example, a plurality of reflection phase graphs depending on changes in the incident angle of the first RF signal to be incident to the RIS 101 are shown.

[0108] According to an embodiment, the third graph 703 may have a first reflection point 731 at a target frequency (e.g., about 29 GHz). Since the third graph 703 has the first reflection point 731 at the target frequency (e.g., about 29 GHz), the third graph 703 may have substantially the same phase value at the target frequency (e.g., about 29 GHz). Similarly, the fourth graph 704 may have a first resonance point 741 at the target frequency (e.g., about 29 GHz). Since the fourth graph 704 has the first resonance point 741 at the target frequency (e.g., about 29 GHz), the fourth graph 704 may have substantially the same phase value at the target frequency (e.g., about 29 GHz). Therefore, if the first unit cell 211 of the RIS 101 is designed so that the second RF signal to be reflected from the first unit cell 211 has multiple resonance points, regardless of the incident value of the first RF signal to be incident to the RIS 101, the phase difference between the second RF signal to be reflected when the first switching circuit 350 is turned on and the second RF signal to be reflected when the first switching circuit 350 is turned off can be kept constant.

[0109] Therefore, since the first unit cell 211 of the RIS 101 includes the first conductive structure 310 and the second conductive structure 320 forming a multi-resonance point, the following problem can be minimized or prevented: depending on the incident angle of the first RF signal to be incident to the RIS at a target frequency band (for example, about 28 GHz), reflection of the second RF signal is not achieved in a designed direction, or the intensity of the second RF signal to be reflected is weakened.

[0110] Figure 8 A first polarized wave and a second polarized wave formed in a first element according to an embodiment are shown.

[0111] refer to Figure 8 , when the first RF signal 371 from the first external device 102 is incident on the first element 311 according to an embodiment, an electrical path 810 may be formed in the first element 311. For example, when the first RF signal 371 is incident, the first electrical path 811 may be formed in the first element 311. As another example, when the first RF signal 371 is incident, a second electrical path 812 may be formed in the first element 311.

[0112] According to an embodiment, a first polarization signal may be formed based on the first electrical path 811, and a second polarization signal may be formed based on the second electrical path 812. For example, the first polarization signal may correspond to horizontal polarization, and the second polarization signal may correspond to vertical polarization. For example, the first polarization signal may have a polarization characteristic of a third direction (e.g., an x-axis direction), and the second polarization signal may have a polarization characteristic of a fourth direction (e.g., a y-axis direction). In an embodiment, the first polarization signal and the second polarization signal may be substantially perpendicular.

[0113] According to an embodiment, the first polarization signal and the second polarization signal may have different frequency bands. For example, the first electrical path 811 may have a longer electrical length than the second electrical path 812, and the first polarization formed based on the first electrical path 811 may correspond to a signal of a relatively lower frequency band than the second polarization formed based on the second electrical path 812.

[0114] According to an embodiment, by using the first polarization signal and the second polarization signal, the RIS 101 may transmit a relatively larger amount of information to the second external device 103 than a case where the polarization signal is not used.

[0115] Fig. 9 : is a view for comparing the reflection phase difference in each of the unit cell designed to have a single resonance point and the first unit cell formed to have multiple resonance points according to the embodiment.

[0116] refer to Fig. 9 , the first graph 901 according to the embodiment is a graph of the reflection phase difference depending on the incident angle or reflection angle in the horizontal direction of a signal to be incident or reflected from a unit cell designed to have a single resonance point. For example, the incident angle in the horizontal direction may mean when the incident angle is relative to the first unit cell (for example, Figure 3 The first RF signal of the first unit cell 211 is perpendicular to a direction of a surface of the first unit cell 211 (for example, Figure 3 -z direction), the first RF signal and a specific axis (e.g., Figure 3 As another example, the incident angle in the horizontal direction may mean an angle formed between the first RF signal and the x-axis of the first unit cell 211. Figure 3 An angle formed between a specific axis (e.g., the x-axis) and the first RF signal projected orthogonally.

[0117] In addition, the reflection angle in the horizontal direction may refer to the angle of reflection relative to the first unit cell (eg, Figure 3 The second RF signal reflected by the first unit cell 211 is perpendicular to a direction of one surface of the first unit cell 211 (for example, Figure 3 -z direction), the second RF signal and a specific axis (e.g., Figure 3 As another example, the reflection angle in the horizontal direction may mean an angle formed between the second RF signal and the x-axis of the first unit cell 211. Figure 3 An angle formed between a specific axis (e.g., the x-axis) and the second RF signal projected orthogonally thereafter.

[0118] The second graph 902 is a graph of phase differences depending on the incident angle or reflection angle in the horizontal direction of a signal to be incident or reflected from a unit cell designed to have a single resonance point.

[0119] For example, the incident angle in the vertical direction may mean when the first RF signal to be incident on the first unit cell is in a direction horizontal to one surface of the first unit cell 211 (eg, Figure 3 When observing in the +y direction of the first RF signal and a specific axis (for example, Figure 3 As another example, the incident angle in the vertical direction may mean an angle formed between the first RF signal and the z-axis of the first unit cell 211. Figure 3 An angle formed between a specific axis (e.g., the x-axis) and the first RF signal projected orthogonally.

[0120] In addition, the reflection angle in the vertical direction may mean when the second RF signal to be reflected from the first unit cell is in a direction horizontal to one surface of the first unit cell 211 (eg, Figure 3 When observing in the +y direction of the second RF signal and a specific axis (for example, Figure 3 As another example, the reflection angle in the vertical direction may mean an angle formed between the second RF signal orthogonally projected onto a plane perpendicular to the first unit cell 211 relative to the second RF signal to be reflected from the first unit cell 211 (e.g., Figure 3 An angle formed between a specific axis (e.g., the x-axis) and the second RF signal projected orthogonally thereafter.

[0121] According to an embodiment, the third graph 903 is a phase difference graph depending on the incident angle or reflection angle in the horizontal direction of a signal to be incident or reflected from the first unit cell 211 designed to have multiple resonance points. The fourth graph 904 is a reflection phase difference graph depending on the incident angle or reflection angle in the vertical direction of a signal to be incident or reflected from the first unit cell 211 designed to have multiple resonance points.

[0122] Referring to the first graph 901 and the second graph 902, the reflection phase difference gradually decreases as the incident angle or reflection angle of the RF signal incident to the unit cell designated as having a single resonance point increases. For example, when the incident angle or reflection angle in the horizontal direction is about 50 degrees, the reflection phase difference of the signal to be reflected is about 130 degrees. As another example, when the incident angle or reflection angle in the vertical direction is about 50 degrees, the reflection phase difference of the signal to be reflected is about 125 degrees. In the case where the unit cell is designed to have a single resonance point, the reflection phase difference of the signal to be reflected differs from the ideal value (i.e., 180 degrees) by about 50 degrees to about 55 degrees. Therefore, the RF signal to be reflected from the unit cell designed to have a single resonance point may have a problem of weakened signal strength.

[0123] On the other hand, referring to the third graph 903 and the fourth graph 904 according to the embodiment, the reflection phase difference of the signal can be kept constant in the range of about 170 degrees to about 180 degrees, regardless of the incident angle or reflection angle of the RF signal incident to the first unit cell 211 designed to have multiple resonance points. For example, when the incident angle or reflection angle in the horizontal direction is about 45 degrees, the reflection phase difference of the signal to be reflected is close to about 180 degrees. As another example, when the incident angle or reflection angle in the vertical direction is about 45 degrees (or in this case), the reflection phase difference of the signal to be reflected is close to about 180 degrees. Therefore, the second RF signal to be reflected from the first unit cell 211 designed to have multiple resonance points can have a relatively larger signal strength than the RF signal to be reflected from the unit cell designed to have a single resonance point.

[0124] Fig.10 A first unit cell of a RIS according to an embodiment is shown.

[0125] refer to Fig.10 , the RIS 101 according to an embodiment may include a first unit cell 1001. The first unit cell 1001 according to an embodiment may include a first conductive structure 1010, a second conductive structure 1020, a first conductive via 1041, a second conductive via 1051 and / or a first switch circuit 1050. Fig.10 The first conductive via 1041, the second conductive via 1051 and the first switch circuit 1050 shown may correspond to Figure 3 The first conductive via 341, the second conductive via 351 and the first switch circuit 350 are shown. Therefore, unless there is no conflict, Figure 3 The description of the first conductive via 341, the second conductive via 351 and the first switch circuit 350 described in the above can also be applied to Fig.10 The first conductive via 1041 , the second conductive via 1051 and the first switch circuit 1050 .

[0126] Different from Figure 3 The elements of the first conductive structure 310 and the elements of the second conductive structure are shown in FIG. Fig.10 The elements of the first conductive structure 1010 and the elements of the second conductive structure 1020 shown in FIG. 1 may have different sizes. For example, the first element 1011 may have a smaller size than the second element 1012, and the second element 1012 may have a smaller size than the third element 1013. As another example, the fourth element 1024 may have a smaller size than the fifth element 1025, and the fifth element 1025 may have a smaller size than the sixth element 1026.

[0127] Different from Figure 3 The elements of the first conductive structure 310 and the elements of the second conductive structure 320 are shown in FIG. Fig.10 The elements of the first conductive structure 1010 and the elements of the second conductive structure 1020 shown in FIG. 1 may not include slots. Figure 3 Unlike the first element 311 , the first element 1011 may not include a slot.

[0128] According to an embodiment, even if the first conductive structure 1010 and the second conductive structure 1020 do not include a slot, since the first conductive structure 1010 and the second conductive structure 1020 have elements each having a different size, the second RF signal to be reflected from the first unit cell 1001 may have multiple resonance points. For example, since the first element 1011 has a smaller size than the second element 1012, the length of the first electrical path formed in the first element 1011 may be shorter than the length of the second electrical path formed in the second element 1012. Therefore, the first RF signal formed based on the first electrical path may have a higher resonance frequency than the second RF signal formed based on the second electrical path longer than the first electrical path. Similarly, since the second element 1012 has a smaller size than the third element 1013, the length of the second electrical path formed in the second element 1012 may be shorter than the length of the third electrical path formed in the third element 1013. Therefore, the second RF signal formed based on the second electrical path may have a higher resonance frequency than the third RF signal formed based on the third electrical path. Therefore, since the first element 1011, the second element 1012 and the third element 1013 have different sizes, an RF signal with multiple resonant frequencies can be formed. In addition, the description about the first element 1011, the second element 1012 and the third element 1013 can also be basically applied to the fourth element 1024, the fifth element 1025 and the sixth element 1026.

[0129] Despite Fig.101011 and the fourth element 1024 are described as having substantially the same size, but this is only an example, and the first element 1011 and the fourth element 1024 may have different sizes. Similarly, the second element 1012 and the fifth element 1025 may have different sizes. The third element 1013 and the sixth element 1026 may have different sizes. That is, the element located in the left direction (e.g., -x direction) relative to the first switch circuit 1050 and the element located in the right direction (e.g., +x direction) relative to the first switch circuit 1050 may be asymmetric to each other.

[0130] Despite Fig.10 1 and 2 may have different sizes instead of slots formed in the first conductive structure 310 and the second conductive structure 320. This is for the convenience of description. Therefore, in another embodiment, each of the elements of the first conductive structure 310 and the second conductive structure 320 may have different sizes and may also have slots. That is, in another embodiment, the RIS 101 may achieve multi-band by adjusting all sizes of the elements and the slots.

[0131] The conductive structure of the present invention may be referred to as a hardware component. The conductive structure of the present disclosure may be referred to as a component including conductive materials.

[0132] The conductive structure of the present disclosure can be replaced by various terms referring to objects including conductive materials. For example, the conductive structure can be replaced by a conductive plate, a conductive patch, or a reflector including conductive materials. As another example, the conductive structure can be replaced by an antenna or a radiator.

[0133] Elements included in the conductive structure of the present invention may be referred to as hardware components. Elements of the present disclosure may be referred to as components including conductive materials.

[0134] The elements of the present disclosure are included in the conductive structure and can be replaced with various terms referring to objects including conductive materials. For example, the first element included in the first conductive structure can be replaced with a first conductive plate, a first conductive patch, or a first reflector including conductive materials. As another example, the element can be replaced with an antenna element or a radiator.

[0135] Fig.11 A first unit cell of a RIS according to an embodiment is shown.

[0136] refer to Fig.11, the RIS 101 according to an embodiment may include a first unit cell 1101. The first unit cell 1101 according to an embodiment may include a first conductive structure 1110, a second conductive structure 1120, a first conductive via 1141, a second conductive via 1151 and / or a first switch circuit 1150. Fig.11 The first conductive structure 1110, the second conductive structure 1120, the first conductive via 1141, the second conductive via 1151 and the first switch circuit 1150 shown may correspond to Figure 3 The first conductive structure 310, the second conductive structure 320, the first conductive via 341, the second conductive via 351 and the first switch circuit 350 are shown. Therefore, unless there is a conflict, Figure 3 The description of the first conductive structure 310, the second conductive structure 320, the first conductive via 341, the second conductive via 351 and the first switch circuit 350 described in the above can also be applied to Fig.11 The first conductive structure 1110 , the second conductive structure 1120 , the first conductive via 1141 , the second conductive via 1151 and the first switch circuit 1150 .

[0137] According to an embodiment, Figure 3 Unlike the first unit cell 211 shown, the first unit cell 1101 may further include a first matching circuit 1161 and / or a second matching circuit 1162. In an embodiment, the first matching circuit 1161 and / or the second matching circuit 1162 may include at least one switch and / or a lumped element (eg, an inductor, a capacitor).

[0138] According to an embodiment, the at least one processor 220 may be electrically coupled to the first matching circuit 1161 and / or the second matching circuit 1162. The at least one processor 220 may adjust the first conductive structure 310 and the second conductive structure 320, respectively, through the first matching circuit 1161 and / or the second matching circuit 1162. In an embodiment, since the respective impedances of the first conductive structure 310 and the second conductive structure 320 are adjusted by the first matching circuit 1161 and / or the second matching circuit 1162, the second RF signal to be reflected from the first unit cell 1101 may have a plurality of frequencies.

[0139] For example, at least one processor 220 may control the first matching circuit 1161 so that a lumped element (e.g., an inductor, a capacitor) is electrically coupled to the first element 1111. Since the lumped element is electrically coupled to the first element 1111, the electrical length of the first electrical path formed in the first element 1111 may vary. Therefore, the resonant frequency band of the first RF signal formed based on the first electrical path may shift. Therefore, the RIS 101 may use the first matching circuit 1161 and / or the second matching circuit 1162 to shift the resonant frequency of the second RF signal to be reflected, and may implement multi-band. According to an embodiment, at least one processor 220 may perform matching by adjusting the structure of the element via the first matching circuit 1161 and / or the second matching circuit 1162. For example, at least one processor 220 may control the first matching circuit 1161 so that the lumped element is electrically coupled to the first element 1111. Since the lumped element is coupled to the first element 1111, the structure (e.g., electrical structure) of the first element 1111 may be adjusted, and matching may be performed.

[0140] For example, the at least one processor 220 may control the second matching circuit 1162 so that the lumped element is electrically coupled to the fourth element 1124. Since the lumped element is coupled to the fourth element 1124, the structure (eg, electrical structure) of the fourth element 1124 may be adjusted and matching may be performed.

[0141] The foregoing description regarding the first element 1111 may also be substantially equally applicable to the second element 1112 , the third element 1113 , the fourth element 1124 , the fifth element 1115 , and the sixth element 1116 .

[0142] Despite Fig.11 The description is made on the premise that the elements included in the first conductive structure 1110 and the second conductive structure 1120 have the same size, but this is for the convenience of description. Therefore, in another embodiment, each of the elements of the first conductive structure 1110 and the second conductive structure 1120 may have a different size and have a different electrical path due to the matching circuit. That is, Fig.10 Examples and Fig.11 A combination of the embodiments is possible in another embodiment.

[0143] Fig.12 A first unit cell and a second unit cell of a RIS according to an embodiment are shown.

[0144] refer to Fig.12, the RIS 101 according to an embodiment may include a first unit cell 211 and a second unit cell 1201. In an embodiment, the second unit cell 1201 may include components substantially the same as those of the first unit cell 211. In an embodiment, the second unit cell 1201 may correspond to a unit cell adjacent to the first unit cell 211. For example, the second unit cell 1201 may correspond to a unit cell located in a right direction (eg, +x direction) of the first unit cell 211.

[0145] According to an embodiment, the second unit cell 1201 may include a third conductive structure 1210, a fourth conductive structure 1220, a third conductive via 1241, a fourth conductive via 1251 and / or a second switch circuit 1250. In an embodiment, the third conductive structure 1210 may include a first element 1211, a second element 1212 and / or a third element 1213. The fourth conductive structure 1220 may include a fourth component 1224, a fifth component 1225 and / or a sixth component 1226.

[0146] Fig.12 The third conductive structure 1210, the fourth conductive structure 1220, the third conductive via 1241, the fourth conductive via 1251 and the second switch circuit 1250 shown may correspond to the first conductive structure 310, the second conductive structure 320, the first conductive via 341, the second conductive via 351 and the first switch circuit 350 of the first unit cell 211, respectively. Figure 3 The description of the first conductive structure 310, the second conductive structure 320, the first conductive via 341, the second conductive via 351 and the first switch circuit 350 described in the specification can also be applied to the third conductive structure 1210, the fourth conductive structure 1220, the third conductive via 1241, the fourth conductive via 1251 and the second switch circuit 1250 of the second unit cell 1201, respectively.

[0147] According to an embodiment, at least one processor 220 may be electrically coupled to the first unit cell 211 and the second unit cell 1201. For example, at least one processor 220 may be electrically coupled (or connected) to the first switching circuit 350 of the first unit cell 211 and the second switching circuit 1250 of the second unit cell 1201.

[0148] According to an embodiment, the at least one processor 220 may control the electrical connection relationship between the first conductive structure 310 and the second conductive structure 320 by controlling the first switch circuit 350. For example, the at least one processor 220 may electrically couple the first conductive structure 310 and the second conductive structure 320 by turning on (or short-circuiting) the first switch circuit 350. As another example, the at least one processor 220 may not electrically couple the first conductive structure 310 and the second conductive structure 320 by turning off (or opening) the second switch circuit 1250.

[0149] According to an embodiment, the at least one processor 220 may control the electrical connection relationship between the third conductive structure 1210 and the fourth conductive structure 1220 by controlling the second switch circuit 1250. For example, the at least one processor 220 may electrically couple the third conductive structure 1210 and the fourth conductive structure 1220 by turning on (or short-circuiting) the second switch circuit 1250. As another example, the at least one processor 220 may not electrically couple the third conductive structure 1210 and the fourth conductive structure 1220 by turning off (or opening) the second switch circuit 1250.

[0150] According to an embodiment, at least one processor 220 may electrically couple the first conductive structure 310 and the second conductive structure 320 by controlling the first switch circuit 350, and may electrically decouple the third conductive structure 1210 and the fourth conductive structure 1220 by controlling the second switch circuit 1250. In an embodiment, in the case where the first RF signal is incident from the first external device 102 to the first unit cell 211, the second RF signal to be reflected from the first conductive structure 310 and the second conductive structure 320 coupled to each other may have a first phase. In an embodiment, in the case where the third RF signal is incident from the first external device 102 to the second unit cell 1201, the fourth RF signal reflected from the third conductive structure 1210 and the fourth conductive structure 1220 that are not coupled to each other may have a second phase. In an embodiment, the second phase may be different from the first phase. For example, the second phase may differ from the first phase by about 180 degrees.

[0151] According to an embodiment, the at least one processor 220 turns on the first switch circuit 350 of the first unit cell 211 and turns off the second switch circuit 1250 of the second unit cell 1201 adjacent to the first unit cell 211. Therefore, the RIS 101 may adjust the reflection direction of the RF signal to be reflected.

[0152] Despite Fig.12 In the embodiment of the embodiment, it is described that the first switch circuit 350 is turned on and the second switch circuit 1250 is turned off, but this is only an example. In another embodiment, at least one processor 220 can turn on the first switch circuit 350 and turn off the second switch circuit 1250.

[0153] Although it is described in the present disclosure that the first switch circuit 350 and the second switch circuit 1250 are controlled by at least one processor 220, this is only an example. In another embodiment, the first switch circuit 350 and / or the second switch circuit 1250 can be autonomously turned on or off without the control of at least one processor 220.

[0154] The unit cell of the reconfigurable smart surface (RIS) according to various embodiments of the present disclosure may include: a first conductive structure including a first element and a second element disposed below the first element; a second conductive structure including a third element and a fourth element disposed below the third element; and a switching circuit disposed between the first conductive structure and the second conductive structure. In the case where a first radio frequency (RF) signal is incident on the unit cell from a first external device, a second RF signal having a first resonant frequency may be reflected based on electrical paths formed in the first element and the third element, respectively. A third RF signal having a second resonant frequency different from the first resonant frequency may be reflected based on electrical paths formed in the second element and the fourth element, respectively. The first element and the second element may be electrically coupled (or connected) to each other. The third element and the fourth element may be electrically coupled (or connected) to each other.

[0155] According to an embodiment, the unit cell may further include a first conductive via electrically coupling the first element and the second element, and a second conductive via electrically coupling the third element and the fourth element.

[0156] According to an embodiment, the first slot formed in the first element may have a different size than the second slot formed in the second element.

[0157] According to an embodiment, the first slot may be larger in size than the second slot.

[0158] According to an embodiment, in the unit cell, the first conductive structure may further include a fifth element disposed under the second element and electrically coupled (or connected) to the first element and the second element. The second conductive structure may further include a sixth element disposed under the fourth element and electrically coupled (or connected) to the third element and the fourth element.

[0159] According to an embodiment, the unit cell may further include at least one processor electrically coupled to the switch circuit. The at least one processor may control the first conductive structure and the second conductive structure through the switch circuit.

[0160] According to an embodiment, when the first conductive structure and the second conductive structure are electrically coupled through the switching circuit (or in this case), in the case where the first RF signal is incident from the first external device to the unit cell, the fourth RF signal to be reflected from the first conductive structure and the second conductive structure may have a first phase. When the first conductive structure and the second conductive structure are not electrically coupled (or connected) through the switching circuit (or in this case), in the case where the first RF signal is incident from the first external device to the unit cell, the fifth RF signal to be reflected from the first conductive structure and the second conductive structure may have a second phase different from the first phase.

[0161] According to an embodiment, the first phase and the second phase may have a difference of 180 degrees.

[0162] According to an embodiment, when a first RF signal is incident to the unit cell from a first external device, a first polarization signal in a first direction and a second polarization signal in a second direction substantially perpendicular to the first direction may be reflected from the first and second conductive structures.

[0163] According to an embodiment, the second RF signal having the first resonance frequency and the third RF signal having the second resonance frequency may be transmitted to the second external device.

[0164] According to an embodiment, the first conductive structure and the second conductive structure may be at least partially disposed inside the dielectric.

[0165] According to an embodiment, the switch circuit may include a first switch electrically coupling the first element and the third element, and a second switch electrically coupling the second element and the fourth element.

[0166] According to an embodiment, the first element may correspond to the first conductive patch. The second element may correspond to the second conductive patch. The third element may correspond to the third conductive patch. The fourth element may correspond to the fourth conductive patch.

[0167] According to an embodiment, in a case where a first RF signal is incident from a first external device to the unit cell, a first electrical path formed in the first element may have an electrical length different from an electrical length of a second electrical path formed in the second element.

[0168] According to an embodiment, the first element may be different in size from the second element.The third element may be different in size from the fourth element.

[0169] A reconfigurable smart surface (RIS) according to various embodiments may include a first unit cell, the first unit cell including: a first conductive structure including a first element and a second element disposed below the first element; a second conductive structure including a third element and a fourth element disposed below the third element; and a switching circuit disposed between the first conductive structure and the second conductive structure. In the case where an RF signal is incident from a first external device to the first unit cell, a second RF signal having a first resonant frequency may be reflected based on electrical paths formed in the first element and the third element, respectively. A third RF signal having a second resonant frequency different from the first resonant frequency may be reflected based on electrical paths formed in the second element and the fourth element, respectively. The first element and the second element may be electrically coupled to each other. The third element and the fourth element may be electrically coupled to each other.

[0170] According to an embodiment, the RIS may further include a second unit cell. The second unit cell may include: a third conductive structure including a fifth element and a sixth element disposed below the fifth element; a fourth conductive structure including a seventh element and an eighth element disposed below the seventh element; and a second switch circuit disposed between the third conductive structure and the fourth conductive structure. The fifth element and the sixth element may be electrically coupled to each other. The seventh element and the eighth element may be electrically coupled to each other.

[0171] According to an embodiment, the RIS may further include at least one processor electrically coupled to the first switch circuit and the second switch circuit. The at least one processor may control the first switch circuit so that the first conductive structure and the second conductive structure are electrically coupled, and may control the second switch circuit so that the third conductive structure and the fourth conductive structure are not electrically coupled.

[0172] According to an embodiment, when the first RF signal is incident on the first unit cell from the first external device, the fourth RF signal to be reflected from the first conductive structure and the second conductive structure may have a first phase. When the fifth RF signal is incident on the second unit cell from the first external device, the sixth RF signal to be reflected from the third conductive structure and the fourth conductive structure may have a second phase different from the first phase.

[0173] According to an embodiment, a first slot formed in the first element may be different in size from a second slot formed in the second element.

[0174] Although the present disclosure has been described with various embodiments, various changes and modifications may be suggested to one skilled in the art. The present disclosure is intended to encompass such changes and modifications as fall within the scope of the appended claims.

Claims

1. A unit cell of a reconfigurable smart surface (RIS), the unit cell comprising: a first conductive structure, comprising a first element and a second element disposed below the first element, wherein the first element and the second element are electrically connected to each other; a second conductive structure, comprising a third element and a fourth element disposed below the third element, wherein the third element and the fourth element are electrically connected to each other; as well as a switch circuit, arranged between the first conductive structure and the second conductive structure, Wherein, when a first radio frequency (RF) signal from a first external device is incident on the unit cell: The unit cell reflects a second RF signal having a first resonance frequency based on electrical paths formed in the first element and the third element, respectively, and The unit cell reflects a third RF signal having a second resonance frequency different from the first resonance frequency based on electrical paths formed in the second element and the fourth element, respectively.

2. The unit cell according to claim 1, further comprising: a first conductive via electrically connecting the first element and the second element; as well as The second conductive via electrically connects the third element and the fourth element.

3. The unit cell according to claim 1, wherein A first slot formed in the first member is different in size from a second slot formed in the second member.

4. The unit cell according to claim 3, wherein: The first slot is larger in size than the second slot.

5. The unit cell according to claim 1, in, The first conductive structure further includes a fifth element disposed below the second element and electrically coupled to the first element and the second element, and The second conductive structure further includes a sixth element, which is disposed below the fourth element and electrically coupled to the third element and the fourth element.

6. The unit cell according to claim 1, further comprising: at least one processor electrically connected to the switching circuit, Wherein, the at least one processor is configured to control the first conductive structure and the second conductive structure through the switch circuit.

7. The unit cell according to claim 1, wherein In a case where the first conductive structure and the second conductive structure are electrically connected through the switching circuit, a fourth RF signal reflected from the first conductive structure and the second conductive structure has a first phase based on the first RF signal from the first external device incident on the unit cell, and Wherein, when the first conductive structure and the second conductive structure are not electrically connected through the switching circuit, the fifth RF signal reflected from the first conductive structure and the second conductive structure has a second phase different from the first phase based on the first RF signal from the first external device incident on the unit cell.

8. The unit cell according to claim 7, wherein The difference between the first phase and the second phase is 180 degrees.

9. The unit cell according to claim 1, wherein: When the first RF signal from the first external device is incident on the unit cell, a first polarized signal in a first direction and a second polarized signal in a second direction substantially perpendicular to the first direction are reflected from the first conductive structure and the second conductive structure.

10. The unit cell according to claim 1, wherein: The second RF signal having the first resonant frequency and the third RF signal having the second resonant frequency are transmitted to a second external device.

11. The unit cell according to claim 1, wherein: At least a portion of the first conductive structure and the second conductive structure are disposed in a dielectric.

12. The unit cell according to claim 1, wherein The switch circuit comprises: a first switch electrically connecting the first element and the third element; and The second switch electrically connects the second element and the fourth element.

13. The unit cell according to claim 1, wherein: The first element corresponds to a first conductive patch; The second element corresponds to a second conductive patch; The third element corresponds to a third conductive patch; and The fourth element corresponds to a fourth conductive patch.

14. The unit cell according to claim 1, wherein: When the first RF signal from the first external device is incident on the unit cell, a first electrical path formed in the first element has an electrical length different from an electrical length of a second electrical path formed in the second element.

15. The unit cell according to claim 1, in, The first element is different in size from the second element, and The third element is different in size from the fourth element.

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