Light-emitting layer material, light-emitting device and display panel

Abstract

The embodiment of the invention provides a light-emitting layer material, a light-emitting device and a display panel, relates to the technical field of display, and is used for improving the efficiency of the light-emitting device. The material of the light-emitting layer is selected from any one of the structures shown in the following general formula (I). Wherein A1, A2 and A3 are the same or different and are respectively and independently selected from any one of substituted or unsubstituted C6-C30 aromatic rings and substituted or unsubstituted C2-C30 heteroaromatic rings. X1, X2, X3 and X4 are the same or different and are respectively and independently selected from any one of a direct bond, O, S, NRA, CRBRC and SiRDRE. RA, RB, RC, RD and RE are the same or different and are respectively and independently selected from any one of the structures shown in the general formula (IA). The luminescent layer material is used for a luminescent layer of a luminescent device.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting layer material, a light-emitting device and a display panel. Background Art

[0002] OLED (Organic Light Emitting Diode) display panels are widely used in display screens such as mobile phones, tablets, and car displays due to their advantages such as full solid state, fast response speed, and wide operating temperature range. Summary of the invention

[0003] An object of the embodiments of the present disclosure is to provide a display panel and a display device for improving the efficiency of a light-emitting device.

[0004] To achieve the above objectives, the embodiments of the present disclosure provide the following technical solutions:

[0005] In one aspect, a light-emitting layer material is provided, wherein the light-emitting layer material is selected from any one of the structures shown in the following general formula (I).

[0006]

[0007] wherein A1, A2 and A3 are the same or different and are independently selected from any one of substituted or unsubstituted C6-C30 aromatic rings and substituted or unsubstituted C2-C30 heteroaromatic rings. X1, X2, X3 and X4 are the same or different and are independently selected from direct bonds, O, S, NR A , CR B R C and SiR D R E Any of the following. A , R B , R C , R D and R E The same or different, are independently selected from any one of the structures represented by general formula (IA).

[0008]

[0009] L is selected from any one of direct bond, substituted or unsubstituted alkylene, substituted or unsubstituted cycloalkylene, substituted or unsubstituted heterocycloalkylene, substituted or unsubstituted alkenylene, substituted or unsubstituted alkynylene, substituted or unsubstituted arylene and substituted or unsubstituted heteroarylene. Ar is selected from any one of substituted or unsubstituted C6-C30 aryl, substituted or unsubstituted 3- to 30-membered heteroaryl, amino, substituted or unsubstituted mono-C1-C30 alkylamino, substituted or unsubstituted di-C1-C30 alkylamino, substituted or unsubstituted mono-C6-C30 arylamino, substituted or unsubstituted di-C6-C30 arylamino and substituted or unsubstituted C1-C30 alkyl C6-C30 arylamino.

[0010] In the case where the light-emitting layer material includes a first fused ring (composed of A1, A2, A3, X1, X2, X3 and X4), the first fused ring has strong rigidity, which can make the light-emitting layer material have strong rigidity, so that the splitting energy level of the light-emitting layer material can be reduced, and the non-radiative transition of the light-emitting layer material can be reduced. In this way, when the light-emitting layer of the light-emitting device includes the light-emitting layer material, the efficiency of the light-emitting device can be improved. In addition, in the case where the light-emitting layer material has strong rigidity, the light-emitting layer material has a higher glass transition temperature, which can improve the film-forming property and thermal stability of the light-emitting layer material, and avoid the light-emitting layer material being affected by the Joule heat generated when the light-emitting device is operated by applying voltage. In this way, the film-forming property (for example, the light-emitting layer forms a good amorphous film) and thermal stability of the light-emitting layer can be improved, and the light-emitting life of the light-emitting device can be improved, and the degradation of the performance of the light-emitting device due to poor stability can be avoided (for example: avoiding the cracking of the material of the light-emitting layer during the evaporation process), and the operational stability of the material of the light-emitting layer in the light-emitting layer formation process can be improved (for example: the film state during the light-emitting layer formation process can be improved).

[0011] In some embodiments, at least one of A1, A2 and A3 is a fused aromatic ring or a fused heteroaromatic ring having 10 or more atoms in the ring.

[0012] In some embodiments, at least one of X1, X2, X3 and X4 is selected from NR A , CR B R C and SiR D R E Any of .

[0013] In some embodiments, at least one of X1, X2, X3 and X4 is NR A .

[0014] In some embodiments, the general formula (I) includes R A , R B , RC , R D and R E In at least one of the above, Ar is a condensed aromatic ring or a condensed heteroaromatic ring.

[0015] In some embodiments, the general formula (I) includes R A , R B , R C , R D and R E In at least one of the above, Ar is a fused aromatic ring or a fused heteroaromatic ring having a smaller number of ring atoms than G, and G is the number of ring atoms of the fused ring composed of A1, A2, A3, X1, X2, X3 and X4.

[0016] In some embodiments, the general formula (I) includes R A , R B , R C , R D and R E In at least one of the above, Ar is a fused aromatic ring or a fused heteroaromatic ring having 12 to 19 atoms in the ring.

[0017] In some embodiments, the general formula (I) includes R A , R B , R C , R D and R E In at least one of them, Ar is selected from any one of the structures represented by the following general formula (IB-1), general formula (IB-2), general formula (IB-3) and general formula (IB-4).

[0018]

[0019]

[0020] Wherein X5 is selected from direct bond, O, S, NR F and CR G R H Any one of. X6 is selected from O, S, Se, NR I and CR J R K Any of the following. F , R G , R H , R I , R J and R Kthe same or different, and are independently selected from deuterium, (C1-C30) alkyl, halo (C1-C30) alkyl, halogen, cyano, (C3-C30) cycloalkyl, 5- to 7-membered heterocycloalkyl, (C2-C30) alkenyl, (C2-C30) alkynyl, (C6-C30) aryl, (C1-C30) alkoxy, (C6-C30) aryloxy, (C2-C30) heteroaryl, (C6-C30) aryl-substituted (C2-C30) heteroaryl, (C6-C30) aryl-substituted (C1-C30) alkyl, (C1-C30) alkyl-substituted (C6-C30) aryl, (C6-C30) 0) any one of an arylthio group, a mono- or di-(C1-C30) alkylamino group, a mono- or di-(C6-C30) arylamino group, a (C1-C30) alkyl(C6-C30) arylamino group, a di-(C6-C30) arylboryl group, a di-(C1-C30) alkylboryl group, a (C1-C30) alkyl(C6-C30) arylboryl group, a tri-(C1-C30) alkylsilyl group, a di-(C1-C30) alkyl(C6-C30) arylsilyl group, a (C1-C30) alkyldi-(C6-C30) arylsilyl group, a tri-(C6-C30) arylsilyl group, an N-carbazolyl group, a carboxyl group, a nitro group and a hydroxyl group. R1 to R 10 The same or different, each independently selected from any one of hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C1-C12 haloalkyl, substituted or unsubstituted C1-C12 alkoxy, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C6-C60 aryl and substituted and unsubstituted C3-C60 heteroaryl. The value of a is selected from any one of 0, 1, 2 and 3, the values ​​of b and c are the same or different, each independently selected from any one of 0, 1, 2, 3 and 4, and the values ​​of a, b and c are less than or equal to 10. The values ​​of d and f are the same or different, each independently selected from any one of 0, 1, 2 and 3, the value of e is selected from any one of 0, 1, 2, 3 and 4, and the values ​​of d, f and e are less than or equal to 9. The value of g is selected from any one of 0, 1, 2, 3, 4, 5 and 6. The values ​​of h and i are the same or different and are independently selected from any one of 0, 1, 2 and 3, the value of j is selected from any one of 0, 1, 2, 3 and 4, and the value of d, f and e is less than or equal to 9.

[0021] In some embodiments, at least one of A1, A2 and A3 comprises deuterium. And / or at least one of X1, X2, X3 and X4 is selected from NR A , CR B R C and SiR D R E Any of R A , R B, R C , R D and R E At least one of the L's contains deuterium.

[0022] In some embodiments, the general formula (I) includes R A , R B , R C , R D and R E L in the formula (I) is selected from a direct bond and any one of the following structures (IC-1) to (IC-8).

[0023]

[0024] Wherein, the values ​​of z1, z2 and z3 are the same or different, and are independently selected from any one of 0, 1, 2, 3, 4, 5 and 6. The value of z4 is selected from any one of 0, 1, 2, 3, 4, 5, 6 and 7; the value of z5 is selected from any one of 0, 1, 2, 3, 4 and 5; the value of z4 and z5 is less than or equal to 10. The values ​​of z6 and z7 are the same or different, and are independently selected from any one of 0, 1, 2, 3, 4 and 5; the value of z6 and z7 is less than or equal to 8. The value of z8 is selected from any one of 0, 1, 2, 3 and 4. The values ​​of z9 and z10 are the same or different, and are independently selected from any one of 0, 1, 2, 3, 4, 5, 6, 7 and 8.

[0025] In some embodiments, A1 and A3 are the same or different and are independently selected from any one of the following structures (ID-1) to (ID-6).

[0026]

[0027] Wherein, * indicates the fusion site. 11 ~R 16 are the same or different and are independently selected from any one of hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C1-C12 haloalkyl, substituted or unsubstituted C1-C12 alkoxy, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C6-C60 aryl and substituted and unsubstituted C3-C60 heteroaryl. The value of k is selected from any one of 0, 1, 2, 3 and 4. The values ​​of m, p and q are the same or different and are independently selected from any one of 0, 1, 2, 3, 4, 5 and 6. The value of n is selected from any one of 0, 1, 2, 3, 4, 5, 6, 7 and 8. The value of r is selected from any one of 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10.

[0028] In some embodiments, A2 is selected from any one of the following structures (IE-1) to (IE-3).

[0029]

[0030] Wherein, * indicates the fusion site. 17 ~R 19 The same or different, each independently selected from hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C1-C12 haloalkyl, substituted or unsubstituted C1-C12 alkoxy, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C6-60 aryl and substituted or unsubstituted C3-C60 heteroaryl. The values ​​of s and t are the same or different, each independently selected from any one of 0, 1 and 2. The value of u is selected from any one of 0, 1, 2, 3 and 4.

[0031] In some embodiments, the light-emitting layer material is selected from any one of the following structures (I-1) to (I-38).

[0032]

[0033]

[0034]

[0035]

[0036]

[0037]

[0038] Among them, R 11 ~R 19The same or different, each independently selected from any one of hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1-C125 alkyl, substituted or unsubstituted C1-C12 haloalkyl, substituted or unsubstituted C1-C12 alkoxy, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C6-C60 aryl and substituted or unsubstituted C3-C60 heteroaryl. L1 and L2 are the same or different, each independently selected from any one of direct bond, substituted or unsubstituted alkylene, substituted or unsubstituted cycloalkylene, substituted or unsubstituted heterocycloalkylene, substituted or unsubstituted alkenylene, substituted or unsubstituted alkynylene, substituted or unsubstituted arylene and substituted or unsubstituted heteroarylene. Ar1 and Ar2 are the same or different and are independently selected from any one of substituted or unsubstituted C6-C30 aryl, substituted or unsubstituted 3- to 30-membered heteroaryl, amino, substituted or unsubstituted mono-C1-C30 alkylamino, substituted or unsubstituted di-C1-C30 alkylamino, substituted or unsubstituted mono-C6-C30 arylamino, substituted or unsubstituted di-C6-C30 arylamino and substituted or unsubstituted C1-C30 alkyl C6-C30 arylamino. N is nitrogen. M and E are the same or different and are independently selected from any one of direct bond, O, S, NR A and CR B R C any one of , and M and E are not direct bonds at the same time. The value of k is selected from any one of 0, 1, 2, 3 and 4. The values ​​of m, p and q are the same or different and are independently selected from any one of 0, 1, 2, 3, 4, 5 and 6. The value of n is selected from any one of 0, 1, 2, 3, 4, 5, 6, 7 and 8. The value of r is selected from any one of 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10. The values ​​of s and t are the same or different and are independently selected from any one of 0, 1 and 2. The value of u is selected from any one of 0, 1, 2, 3 and 4.

[0039] In some embodiments, the reorganization energy of the light emitting layer material ranges from 0.1 eV to 0.3 eV.

[0040] In some embodiments, the hole mobility of the light-emitting layer material is in the range of 1×10 -5 m / V·s~1×10 -4 m / V·s.

[0041] In some embodiments, the absolute value of the highest occupied molecular orbital energy level of the light emitting layer material ranges from 4.80 eV to -5.20 eV.

[0042] In some embodiments, the absolute value of the lowest unoccupied molecular orbital energy level of the light-emitting layer material ranges from 1.20 eV to -1.40 eV.

[0043] In some embodiments, the absolute value of the triplet energy level of the light-emitting layer material ranges from 2.20 eV to 2.60 eV.

[0044] On the other hand, a light-emitting device is provided. The light-emitting device comprises: an anode, a cathode and a light-emitting layer. The anode and the cathode are arranged opposite to each other. The light-emitting layer is located between the anode and the cathode. The material of the light-emitting layer comprises a first main material, and the first main material comprises the light-emitting layer material as described in any of the above embodiments.

[0045] The beneficial effects that can be achieved by the above-mentioned light-emitting device are the same as the beneficial effects that can be achieved by the above-mentioned light-emitting layer material, and will not be described in detail here.

[0046] In some embodiments, the material of the light-emitting layer further includes: a guest material. The triplet energy level of the first host material is greater than the triplet energy level of the guest material.

[0047] In some embodiments, the wavelength of light emitted by the guest material is in the range of 600 nm to 650 nm.

[0048] In some embodiments, the material of the light-emitting layer further includes: a second host material. The hole mobility of the second host material is smaller than the hole mobility of the first host material, and the electron mobility of the second host material is larger than the electron mobility of the first host material.

[0049] In some embodiments, the structure of the second host material is the following structure (RH-N-1).

[0050]

[0051] In some embodiments, the first host material and the second host material form a first exciplex, wherein the maximum emission wavelength of the first exciplex is greater than the maximum emission wavelength of the first host material and greater than the maximum emission wavelength of the second host material.

[0052] In some embodiments, the maximum emission wavelength of the first host material is less than the maximum emission wavelength of the second host material. The difference between the maximum emission wavelength of the first exciplex and the maximum emission wavelength of the second host material is greater than or equal to 20 nm.

[0053] In some embodiments, the maximum emission wavelength of the first host material is in the range of 380nm to 430nm; and / or, the maximum emission wavelength of the second host material is in the range of 400nm to 450nm; and / or, the maximum emission wavelength of the first exciplex is in the range of 480nm to 550nm.

[0054] In some embodiments, the material of the light-emitting layer includes a guest material, wherein there is an overlapping region between the normalized fluorescence emission spectrum of the first exciplex and the normalized absorption spectrum of the guest material, and the integral area of ​​the overlapping region is greater than or equal to 20% of the integral area of ​​the normalized fluorescence emission spectrum of the first exciplex.

[0055] In another aspect, a display panel is provided. The display panel comprises a pixel driving circuit and a light emitting device as described in any one of the above embodiments. The pixel driving circuit is electrically connected to the light emitting device; the pixel driving circuit is used to control the light emitting device to emit light.

[0056] The beneficial effects that can be achieved by the above-mentioned display panel are the same as the beneficial effects that can be achieved by the above-mentioned light-emitting device, and will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] In order to more clearly illustrate the technical solutions in the present disclosure, the following briefly introduces the drawings required to be used in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the product involved in the embodiments of the present disclosure, the actual process of the method, the actual timing of the signal, etc.

[0058] Figure 1 is a structural diagram of a display device according to some embodiments;

[0059] Figure 2 is a structural diagram of a display panel according to some embodiments;

[0060] Figure 3 is a structural diagram of a display panel according to some further embodiments;

[0061] Figure 4 is a structural diagram of a display panel according to some further embodiments;

[0062] Figure 5 is a structural diagram of a display panel according to some further embodiments;

[0063] Figure 6 is a structural diagram of a light emitting device according to some embodiments;

[0064] Figure 7 is a structural diagram of a display panel according to some further embodiments;

[0065] Figure 8 is a structural diagram of a light emitting device according to some further embodiments;

[0066] Fig. 9is a curve diagram showing changes in efficiency and life of a light emitting device according to some embodiments;

[0067] Fig.10 is a graph showing a change in efficiency of a light emitting device according to some embodiments;

[0068] Fig.11 are absorption spectra and photoemission spectra of materials of the light-emitting layer according to some embodiments;

[0069] Fig.12 1 is a structural diagram of a light emitting device according to some further embodiments. DETAILED DESCRIPTION

[0070] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

[0071] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms thereof, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open, inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0072] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0073] “At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0074] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0075] The use of "adapted to" or "configured to" herein is meant to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0076] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0077] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of the layers and the area of ​​the regions are exaggerated for clarity. Therefore, variations in the shapes relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0078] like Figure 1 As shown, some embodiments of the present disclosure provide a display device 300, and the display device 300 includes: a display panel 200. The display device 300 may be, for example, an OLED (Organic Light Emitting Diode) display device 300.

[0079] For example, Figure 1 As shown, the display device 300 further includes a driving chip 310. The driving chip 310 is used to drive the display panel 200 to display.

[0080] In addition, the display device 300 may also include an under-screen camera and an under-screen fingerprint recognition sensor, so that the display device 300 can realize a variety of different functions such as taking pictures, recording videos, fingerprint recognition or face recognition.

[0081] The display device 300 described above can be any display device that displays either motion (e.g., video) or fixed (e.g., still images) and whether text or images. More specifically, it is expected that the display device 300 of the embodiment described can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, video cameras, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controls and / or displays, displays of camera views (e.g., displays of rear-view cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0082] In some embodiments, Figure 2 As shown, the display panel 200 includes a substrate 210 and a light-emitting functional layer 220 disposed on the substrate 210 , and the light-emitting functional layer 220 includes a plurality of light-emitting devices 100 .

[0083] Exemplarily, the plurality of light emitting devices 100 may be arranged along the second direction Y, where the second direction Y is, for example, a direction parallel to the plane where the substrate 210 is located.

[0084] Exemplarily, the material of the substrate 210 may be a transparent rigid material, such as glass, to achieve a rigid substrate display; or, the material of the substrate 210 may also be a transparent flexible material, such as polyimide, to achieve a flexible substrate display.

[0085] In some examples, such as Figure 2 As shown, the display panel 200 further includes an array layer 230 disposed between the substrate 210 and the light-emitting functional layer 220, and the array layer 230 includes a plurality of pixel driving circuits 231, wherein the pixel driving circuits 231 include a plurality of transistors TFT. Each pixel driving circuit 231 is electrically connected to a light-emitting device 100, and is used to drive the light-emitting device 100 to emit light.

[0086] Exemplarily, in the display panel 200, the pixel driving circuit 231 can generate a driving current. Each light emitting device 100 can emit light under the driving action of the driving current generated by the corresponding pixel driving circuit 231, and the lights emitted by the multiple light emitting devices 100 cooperate with each other, so that the display panel 200 realizes the display function.

[0087] In some examples, such as Figure 2As shown, the display panel 200 also includes an encapsulation layer 240; at this time, the array layer 230, the light-emitting functional layer 220 and the encapsulation layer 240 are stacked on the substrate 210, and the array layer 230, the light-emitting functional layer 220 and the encapsulation layer 240 are arranged in sequence in a direction away from the substrate 210.

[0088] Exemplarily, the display panel 200 may be an OLED display panel 200. In this case, the encapsulation layer 240 covers the light-emitting device 100, encapsulating the light-emitting device 100 to prevent water vapor and oxygen in the external environment from entering the display panel 200 and damaging the organic material in the light-emitting device 100, thereby shortening the life of the OLED display panel 200.

[0089] In some embodiments, Figure 2 and Figure 3 As shown, in the display panel 200 , the light-emitting functional layer 220 further includes a pixel defining layer 221 . The pixel defining layer 221 has a plurality of openings Q. The plurality of light-emitting devices 100 may be arranged corresponding to the plurality of openings Q one by one.

[0090] In some embodiments, Figure 3 and Figure 4 As shown, the multiple light-emitting devices 100 of the display panel 200 include at least one first light-emitting device 101, at least one second light-emitting device 102, and at least one third light-emitting device 103. Under the action of the driving voltage, the first light-emitting device 101 is configured to emit a first color light, the second light-emitting device 102 is configured to emit a second color light, and the third light-emitting device 103 is configured to emit a third color light.

[0091] The first color light, the second color light and the third color light are different. Thus, by configuring a plurality of light-emitting devices 100 including at least one first light-emitting device 101, at least one second light-emitting device 102 and at least one third light-emitting device 103, the brightness (gray scale) of the first light-emitting device 101, the second light-emitting device 102 and the third light-emitting device 103 can be adjusted respectively, and the display of multiple colors can be achieved through color combination and superposition, thereby realizing full-color display of the display panel 200.

[0092] Exemplarily, the wavelength of the second color light is greater than the wavelength of the first color light, and the wavelength of the third color light is greater than the wavelength of the second color light. For example, the first color light is blue light, the second color light is green light, and the third color light is red light.

[0093] It should be noted that Figure 4 , Figure 5 and Figure 7 It is a simplified schematic diagram obtained after removing other film layers in the display panel 200 except the film layers related to the light emitting device 100.

[0094] In some embodiments, Figure 2 to Figure 8 As shown, the light emitting device 100 includes an anode 11 and a cathode 12 disposed opposite to each other along a first direction X, and at least one light emitting unit 13 disposed between the anode 11 and the cathode 12 . The light emitting unit 13 includes a light emitting layer 131 .

[0095] Based on the above structure, the light-emitting principle of the light-emitting device 100 is: through a circuit (for example, a pixel driving circuit 231) connected by the anode 11 and the cathode 12, holes are injected into the light-emitting layer 131 by the anode 11, and electrons are injected into the light-emitting layer 131 by the cathode 12. The injected electrons and holes form excitons (i.e., electron-hole pairs) in the light-emitting layer 131, and the excitons return to the ground state through radiation transition and emit photons. It can be seen that by balancing the injection and flow of holes and electrons, the light-emitting device 100 (for example, an OLED light-emitting device) can have excellent efficiency.

[0096] In the light-emitting process of the light-emitting device 100, efficient charge generation, effective charge injection, and rapid charge transmission are three essential processes. The above charges are holes or electrons.

[0097] It can be seen from the above-mentioned light-emitting principle that the light-emitting device 100 is a dual-carrier injection device, and holes and electrons are injected into the light-emitting layer from both sides of the light-emitting layer 131 respectively.

[0098] In some embodiments, the balance between holes and electrons in the light-emitting layer 131 may affect the efficiency and lifespan of the light-emitting device 100 .

[0099] In some examples, such as Fig. 9 As shown, according to the density of electron and hole distribution in the light-emitting layer 131, the light-emitting layer 131 can be divided into a first region S1, a second region S2, a third region S3 and a fourth region S4. Wherein, when the exciton recombination region is located in the second region S2, the efficiency of the light-emitting device 100 is higher; when the exciton recombination region is located between the third region S3 and the fourth region S4, the life (LT) performance of the light-emitting device 100 is higher. Wherein, the first region S1 and the fourth region S4 can also be understood as detuned regions (De-tuned regime), the second region S2 can also be understood as an efficiency optimized region (Efficiency optimized regime), and the third region S3 can also be understood as a balanced region (Balanced regime).

[0100] In some other examples, such as Fig.10As shown, according to the density of electron and hole distribution in the light-emitting layer 131, the light-emitting layer 131 can be divided into a first sub-portion T1 (also known as e-rich), a second sub-portion (also known as neutral) T2 and a third sub-portion T3 (also known as h-rich). When the exciton recombination region is located in the first sub-portion T1, the second sub-portion T2 and the third sub-portion T3, the change curve of the efficiency of the light-emitting device 100 is as shown in FIG. Fig.10 As shown. Fig.10 It can be seen that when the exciton recombination zone is located in the first sub-portion T1, the efficiency of the light emitting device 100 can reach the highest.

[0101] In some examples, such as Figure 3 As shown, the anode 11 can be located in the light emitting unit 13 (see Figure 4 ) on a side of the light emitting unit 13 close to the substrate 210, and the cathode 12 may be located on a side of the light emitting unit 13 away from the substrate 210. In other examples, the anode 11 may be located on a side of the light emitting unit 13 away from the substrate 210, and the cathode 12 may be located on a side of the light emitting unit 13 close to the substrate 210.

[0102] Exemplarily, in order to ensure that the light-emitting device 100 can effectively emit light, the anode 11 can be made of a material with a high work function, so that the holes in the anode 11 can be effectively migrated to the light-emitting layer 131 of the light-emitting unit 13 under the drive of the electric field, thereby combining with the electrons of the cathode 12 to emit light. The material of the anode 11 can be a transparent conductive metal oxide material, for example, the material of the anode 11 can be indium tin oxide (Indium Tin Oxide, ITO) or indium zinc oxide (Indium Zinc Oxide, IZO). Alternatively, the anode 11 can be a composite electrode containing multiple materials, for example, the material of the anode 11 can be ITO / Ag / ITO, Ag / IZO, CNT / ITO, CNT / IZO, GO / ITO or GO / IZO, etc., wherein Ag is silver, CNT is carbon nanotube (Carbonnanotube), and GO is graphene oxide (graphene oxide).

[0103] In some examples, the cathode 12 may be made of a material with a low work function, so that the electrons of the cathode 12 can be more easily injected into the target film layer (for example, the electron injection layer 1331. For the introduction of the electron injection layer 1331, see the following content, which will not be repeated here). In this way, the electrons in the cathode 12 can be effectively migrated to the light-emitting layer 131 of the light-emitting unit 13 under the drive of the electric field, thereby recombining with the holes in the anode 11 to emit light. In addition, the cathode 12 must also have good light transmittance and electrical conductivity. The material of the cathode 12 can be a metal material, a metal oxide or a metal alloy, such as aluminum (Al), silver (Ag), gold (Au), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium (Li), potassium (K), sodium (Na), tin (Sn), titanium (Ti), lead (Pb), samarium (Sm), yttrium (Y), indium tin oxide (ITO), magnesium silver alloy (Mg:Ag), ytterbium gold alloy (Yb:Au), ytterbium silver alloy (Yb:Ag), lithium aluminum alloy (Li:Al) or lithium calcium magnesium alloy (Li:Ca:Al), etc.; or, the material of the cathode 12 can be a laminated material, such as magnesium / aluminum (Mg / Al), magnesium / silver (Mg / Ag), aluminum / silver (Al / Ag), aluminum / gold (Al / Au), ytterbium / gold (Yb / Au), ytterbium / silver (Yb / Ag), calcium / magnesium (Ca / Mg), calcium / silver (Ca / Ag), barium / silver (Ba / Ag), etc. Among them, magnesium / aluminum (Mg / Al) means that the cathode 12 includes two thin films, and the materials of the two thin films are magnesium (Mg) and aluminum (Al), respectively.

[0104] In some examples, such as Figure 2 to Figure 4 As shown, the light emitting device 100 includes a light emitting unit 13. In this case, the light emitting device 100 is a single-layer light emitting device, and the anode 11, the light emitting unit 13, and the cathode 12 are stacked along a first direction X, and the first direction X intersects with the second direction Y. In other examples, such as Figures 5 to 8 As shown, the light emitting device 100 includes a plurality of (for example, two) stacked light emitting units 13. At this time, the light emitting device 100 is a stacked light emitting device, and the anode 11, the plurality of light emitting units 13, and the cathode 12 are stacked along the first direction X.

[0105] For example, Figure 2 to Figure 8 As shown, the second direction Y is perpendicular to the first direction X.

[0106] In some embodiments, Figures 5 to 8 As shown, in the case where the light emitting device 100 includes a plurality of light emitting units 13 , the light emitting device 100 further includes a charge generating unit 14 , and the charge generating unit 14 is located between two adjacent light emitting units 13 among the plurality of light emitting units 13 .

[0107] Through the charge generating unit 14, a plurality of light emitting units 13 can be sequentially connected in a vertical direction (e.g., the first direction X) of the light emitting surface. Moreover, the charge generating unit 14 in the stacked OLED light emitting device 100 not only plays a role in connecting the light emitting units 13, but also helps to improve the generation efficiency of charges (holes or electrons), which can have a significant impact on the performance of the light emitting device 100. In addition, when the charge generating unit 14 has high light transmittance in the visible light range, the light emitting efficiency of the light emitting device 100 can be improved.

[0108] In some examples, such as Figures 5 to 8 As shown, the charge generating unit 14 includes an electron generating layer 141 and a hole generating layer 142 which are stacked; the electron generating layer 141 is closer to the anode 11 than the hole generating layer 142 .

[0109] In some embodiments, Figure 3 to Figure 8 As shown, in order to improve the luminous efficiency of the light-emitting device 100, the light-emitting unit 13 also includes a hole transport functional layer 132, which is located on the side of the light-emitting layer 131 close to the anode 11 and in contact with the light-emitting layer 131. The hole transport functional layer 132, for example, includes at least one of a hole injection layer 1321 (Hole Inject Layer, HIL), a hole transport layer 1322 (Hole Transport Layer, HTL) and an electron blocking layer 1323 (Electron Blocking Layer, EBL) that are stacked. When the hole transport functional layer 132 includes the hole injection layer 1321, the hole transport layer 1322, and the electron blocking layer 1323, the hole injection layer 1321, the hole transport layer 1322, and the electron blocking layer 1323 are arranged in sequence in a direction away from the anode 11, and the electron blocking layer 1323 is in contact with the light-emitting layer 131.

[0110] In some embodiments, Figure 3 to Figure 8As shown, in order to improve the luminous efficiency of the light-emitting device 100, the light-emitting unit 13 also includes an electron transport functional layer 133, which is located on the side of the light-emitting layer 131 close to the cathode 12 and in contact with the light-emitting layer 131. The electron transport functional layer 133, for example, includes at least one of a stacked electron injection layer 1331 (Electron Inject Layer, EIL), an electron transport layer 1332 (Electron Transport Layer, ETL), and a hole blocking layer 1333 (Hole Blocking Layer, EBL). When the electron transport functional layer 133 includes an electron injection layer 1331, an electron transport layer 1332, and a hole blocking layer 1333, the electron injection layer 1331, the electron transport layer 1332, and the hole blocking layer 1333 are arranged in sequence in a direction away from the cathode 12, and the hole blocking layer 1333 is in contact with the light-emitting layer 131.

[0111] By setting up the film layers such as the hole injection layer 1321, the hole transport layer 1322, the electron blocking layer 1323, the electron injection layer 1331, the electron transport layer 1332, and the hole blocking layer 1333, it is equivalent to setting up transition steps between the anode 11 and the light-emitting layer 131, and between the cathode 12 and the light-emitting layer 131, thereby reducing the barrier height that needs to be overcome for carrier transition, thereby making the light-emitting efficiency higher.

[0112] Exemplarily, the hole transport functional layer 132 can be configured to transport holes, and / or, block electrons and excitons generated in the light-emitting layer 131. For example, the hole injection layer 1321 can be configured to reduce the hole injection barrier and improve the hole injection efficiency. The hole transport layer 1322 can be configured to transport holes. The electron blocking layer 1323 can be configured to transport holes, block electrons and excitons generated in the light-emitting layer 131; for example, the electron blocking layer 1323 can confine the excitons in the light-emitting layer 131 to prevent the excitons from leaking to both sides of the light-emitting layer 131 and causing efficiency loss.

[0113] For example, the electron transport functional layer 133 may be configured to transport electrons and / or block holes and excitons generated in the light emitting layer 131 .

[0114] Exemplarily, the material of the hole injection layer 1321 may be an inorganic oxide, such as molybdenum oxide, titanium oxide, vanadium oxide, rhenium oxide, ruthenium oxide, chromium oxide, zirconium oxide, hafnium oxide, tantalum oxide, silver oxide, tungsten oxide or manganese oxide, etc.; or, the material of the hole injection layer 1321 may also be a dopant containing a strong electron-withdrawing material, such as 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4TCNQ) or 2,3,6,7,10 ,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HATCN) pyrazolo[2,3-F][1,10]phenanthroline-2,3-dicarbonitrile (PPDN); or, the material of the hole injection layer 1321 can also be a material obtained by P-type doping the material of the hole transport layer 1322, in which case the thickness of the hole injection layer 1321 can be 5nm to 20nm; the process of forming the hole injection layer 1321 is, for example, to form the material of the hole transport layer 1322 and the P-type dopant by co-evaporation. Among them, the structural formulas of F4TCNQ, HATCN and PPDN are as shown below.

[0115]

[0116] Exemplarily, the material of the hole transport layer 1322 has good hole transport characteristics, and can be an aromatic amine material or a carbazole material, such as N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), (9-phenylfluorene-9-yl) triphenylamine (BAFLP) or bis[n-(9,9-dimethylfluorene-2-yl)-n-phenylamino]biphenyl (DFLDPBi), etc. Among them, the structural formula of NPB is as shown below.

[0117]

[0118] Exemplarily, the electron blocking layer 1323 can also be called a light-emitting auxiliary layer, and its material has good hole transport characteristics, and can be an aromatic amine material or a carbazole material, such as 4,4'-di(9-carbazole)biphenyl (CBP) or 9-phenyl-3-[4-(10-phenyl-9-anthracenyl)phenyl]-9h-carbazole (PCzPA), etc.

[0119] Exemplarily, the material of the electron injection layer 1331 may be an alkali metal or a metal, such as lithium fluoride LiF, ytterbium Yb, magnesium Mg, calcium Ca, or a compound of the above metals.

[0120] For example, the materials of the electron transport layer 1332 and the hole blocking layer 1333 may be aromatic heterocyclic compounds, such as imidazole derivatives, pyrimidine derivatives, oxazine derivatives, compounds containing a nitrogen-containing six-membered ring structure, or compounds having a phosphine oxide-based substituent on a heterocyclic ring, etc. Among them, imidazole derivatives are, for example, benzimidazole derivatives, imidazopyridine derivatives, or benzimidazolophenanthridine derivatives; oxazine derivatives are, for example, triazine derivatives, etc.; compounds containing a nitrogen-containing six-membered ring structure are, for example, quinoline derivatives, isoquinoline derivatives, or phenanthroline derivatives, etc. In some examples, the materials of the electron transport layer 1332 and the hole blocking layer 1333 are 2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole] (OXD-7), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenyl)-1,2,4-triazole (p-EtTAZ), 4,7-diphenyl-1,10-phenanthroline (BPhen) or 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), etc. For example, the material of the electron transport layer 1332 may include a material having a structure as shown in the following formula.

[0121]

[0122] In some embodiments, Figure 2 , Figure 3 , Figure 5 and Figure 7 As shown, in the case where the plurality of light-emitting devices 100 include a first light-emitting device 101, a second light-emitting device 102, and a third light-emitting device 103, the cathodes 12 of the plurality of light-emitting devices 100 are a structure in which the entire layer is connected, that is, the cathode 12 may be a common electrode shared by the plurality of light-emitting devices 100. The hole injection layer 1321 of the plurality of light-emitting devices 100 may also be a structure in which the entire layer is connected, that is, the hole injection layer 1321 may be a common film layer shared by the plurality of light-emitting devices 100. The hole transport layer 1322, the electron blocking layer 1323, the electron injection layer 1331, the electron transport layer 1332, the hole blocking layer 1333, the electron generation layer 141, and the hole generation layer 142 may also be common film layers shared by the plurality of light-emitting devices 100, which will not be described in detail here.

[0123] For example, Figure 3 As shown, when the cathode 12 is a common electrode shared by a plurality of light emitting devices 100 , the cathode 12 is simultaneously formed on a side of the pixel defining layer 221 away from the substrate 210 .

[0124] In some embodiments, Figure 3 to Figure 5 and Figure 7As shown, in the case where the plurality of light-emitting devices 100 include a first light-emitting device 101, a second light-emitting device 102, and a third light-emitting device 103, the electron blocking layers 1323 of the first light-emitting device 101, the second light-emitting device 102, and the third light-emitting device 103 are independently arranged; that is, the electron blocking layer 1323 may include a blue electron blocking layer 1323B, a green electron blocking layer 1323G, and a red electron blocking layer 1323R. By setting in this way, the material of the electron blocking layer 1323 with matching performance can be selected as needed according to the different materials of the light-emitting layer 131.

[0125] For example, when the light emitting device 100 is a single-layer light emitting device, the structure of the light emitting device 100 (for example, the first light emitting device 101) is, for example, Figure 4 As shown, the light-emitting device 100 includes an anode 11, a hole injection layer 1321, a hole transport layer 1322, an electron blocking layer 1323, a light-emitting layer 131, a hole blocking layer 1333, an electron transport layer 1332, an electron injection layer 1331 and a cathode 12 which are stacked.

[0126] Exemplarily, in a single-layer light-emitting device, the thickness of the hole injection layer 1321 may range from 5 nm to 30 nm, for example, 5 nm, 10 nm, 15 nm, 20 nm, or 30 nm. The thickness of the hole transport layer 1322 may range from 100 nm to 2000 nm, for example, 100 nm, 300 nm, 500 nm, 1000 nm, 1500 nm, or 2000 nm. The thickness of the electron blocking layer 1323 may range from 5 nm to 100 nm, for example, 5 nm, 30 nm, 50 nm, 70 nm, 90 nm, or 100 nm. The thickness of the light-emitting layer 131 may range from 10 nm to 100 nm, for example, 10 nm, 30 nm, 40 nm, 70 nm, 90 nm, or 100 nm. The thickness of the hole blocking layer 1333 may be in the range of 5 nm to 100 nm, for example, 5 nm, 15 nm, 20 nm, 50 nm, 70 nm, or 100 nm. The thickness of the electron transport layer 1332 may be in the range of 20 nm to 100 nm, for example, 20 nm, 35 nm, 50 nm, 70 nm, 80 nm, or 100 nm. The thickness of the electron injection layer 1331 may be in the range of 1 nm to 10 nm, for example, 1 nm, 3 nm, 5 nm, 7 nm, 8 nm, or 10 nm.

[0127] For example, when the light emitting device 100 is a stacked light emitting device (for example, including two light emitting units 13), the structure of the light emitting device 100 (for example, the first light emitting device 101) is, for example, Figure 6 and Figure 8As shown, the light-emitting device 100 includes a stacked anode 11, a hole transport functional layer 132, a light-emitting layer 131, an electron transport functional layer 133, an electron generating layer 141, a hole generating layer 142, a hole transport functional layer 132, a light-emitting layer 131, an electron transport functional layer 133 and a cathode 12. Among them, the hole transport functional layer 132, the light-emitting layer 131 and the electron transport functional layer 133 located on the side close to the anode 11 constitute a first light-emitting unit 13, and the hole transport functional layer 132, the light-emitting layer 131 and the electron transport functional layer 133 located on the side close to the cathode 12 constitute a second light-emitting unit 13.

[0128] For example, when the light emitting device 100 is a stacked light emitting device (for example, including two light emitting units 13), and the plurality of light emitting devices 100 include a first light emitting device 101, a second light emitting device 102, and a third light emitting device 103, the structure of the display panel 200 is, for example, Figure 5 and Figure 7 As shown, the cathode 12 is the common electrode of the first light-emitting device 101, the second light-emitting device 102 and the third light-emitting device 103; the hole transport functional layers 132 of the first light-emitting unit 13 and the second light-emitting unit 13 except the electron blocking layer 1323, and the electron transport functional layers 133 of the first light-emitting unit 13 and the second light-emitting unit 13 are the common film layers shared by the first light-emitting device 101, the second light-emitting device 102 and the third light-emitting device 103. The anode 11 of the first light-emitting device 101, the second light-emitting device 102 and the third light-emitting device 103, the electron blocking layer 1323 of the first light-emitting unit 13 and the light-emitting layer 131, and the electron blocking layer 1323 and the light-emitting layer 131 of the second light-emitting unit 13 are independently arranged. For the independent arrangement method, please refer to the above content, which will not be repeated here.

[0129] For example, in the above-mentioned stacked light-emitting device, Figures 5 to 8 As shown, the hole transport functional layer 132 of the first light emitting unit 13 closer to the anode 11 may include a hole injection layer 1321, a hole transport layer 1322 and an electron blocking layer 1323. The hole transport functional layer 132 of the second light emitting unit 13 closer to the cathode 12 may include a hole transport layer 1322 and an electron blocking layer 1323.

[0130] For example, in the above-mentioned stacked light-emitting device, Figure 5 and Figure 6 As shown, the electron transport functional layer 133 of the first light emitting unit 13 closer to the anode 11 may include a hole blocking layer 1333. Alternatively, as Figure 7 and Figure 8As shown, the electron transport functional layer 133 of the first light emitting unit 13 may include a hole blocking layer 1333 and an electron transport layer 1332 .

[0131] For example, in the above-mentioned stacked light-emitting device, Figures 5 to 8 As shown, the electron transport functional layer 133 of the second light emitting unit 13 closer to the cathode 12 may include a hole blocking layer 1333 , an electron transport layer 1332 , and an electron injection layer 1331 .

[0132] In the stacked light-emitting device including two light-emitting units 13 , the electron generating layer 141 can inject electrons into the first light-emitting unit 13 , and the hole generating layer 142 can inject holes into the second light-emitting unit 13 .

[0133] In some embodiments, the material of the light-emitting layer 131 includes: a host material and a guest material. By setting it in this way, the efficiency of the light-emitting device 100 can be improved. For example, when the guest material is a phosphorescent material, the luminescence efficiency of the phosphorescent material itself is very low when formed into a film alone, which is mainly due to concentration quenching caused by self-absorption of the material. Therefore, by doping the phosphorescent material into the host material, efficient luminescence of the phosphorescent material can be achieved. It can be seen that the development of the host material is particularly important. For example, the host material can be divided into electron transport type, hole transport type and phosphorescent material type according to the properties of the material itself.

[0134] For example, the host material may be configured to: transport holes or electrons, and / or to recombinantly form excitons with holes and transfer the exciton energy to the guest material.

[0135] Exemplarily, the guest material may be configured to: emit photons using the exciton energy transferred from the host material, and / or to emit photons by forming excitons from recombined electrons and holes.

[0136] Organic molecules excited by the recombination of electrons and holes are not restricted by the law of spin. According to statistical distribution calculations, the ratio of excited singlet states to excited triplet states is 1:3. In some examples, the guest material is a fluorescent material, and singlet excitons are used for luminescence. This is equivalent to using about 25% of the input energy, while 75% of the energy of the excited triplet state is wasted, making the energy utilization rate of the guest material low. In some other examples, the guest material is a phosphorescent material or a delayed fluorescent material, which can simultaneously use singlet excitons and triplet excitons for luminescence.

[0137] For example, by introducing heavy metal atoms into the guest material, the 75% triplet excitons that could not be used before can be transitioned to the ground state by spin-orbit coupling, which can break the limitation that the internal quantum efficiency of fluorescent devices is no more than 25%. Therefore, in theory, the internal quantum efficiency of a light-emitting device (also called a phosphorescent organic electroluminescent device) whose guest material is a phosphorescent material can reach 100%. Phosphorescent organic electroluminescence is considered to be an effective way to improve device efficiency.

[0138] In some examples, the host material includes more than two materials, for example, the host material may include a first host material and a second host material, wherein the first host material (also referred to as a hole-type host material, HP) is a hole-type material, and the second host material (also referred to as an electron-type host material, HN) is an electron-type material.

[0139] In some examples, the guest material is a phosphorescent material, and the host material is a premixed material containing a first host material and a second host material. In this case, the first host material and the second host material can form an exciton complex. In this case, under electrical excitation, electrons and holes recombine on the host material to form excitons, and the excitons are transferred from the host material to the phosphorescent guest (Dopant) through energy, and then emit light through the Dopant radiation transition. Therefore, the selection of the host material is crucial to improving the performance of the light-emitting device, and the performance of the light-emitting device here includes, for example, the performance in terms of efficiency, life, and improved efficiency roll-off of the light-emitting device.

[0140] In some examples, the absorption spectrum (Abs) of the guest material, and the photoemission spectrum (PL) of the first host material, the second host material, and the exciplex are as follows: Fig.11 As shown by Fig.11 It can be seen that the photoemission spectrum of the exciplex formed by the combination of the first host material and the second host material is different from the photoemission spectrum of the first host material and the second host material (the mass ratio is, for example, 50:50). Moreover, the photoemission spectrum of the exciplex can be compared with the absorption spectrum of the guest material. 3 The MLCT peaks overlap (overlap in the SS region). In this case, the excitons generated by the host material can be well transferred to the guest material to achieve light emission of the light-emitting layer 131 .

[0141] In some examples, the light-emitting layer 131 of the light-emitting device 100 is a single-layer structure; in other examples, the light-emitting layer 131 of the first light-emitting device 101 is a stacked structure, and when the light-emitting layer 131 of the light-emitting device 100 is a stacked structure, the material of each film layer in the stacked structure includes a main material and a guest material, and in different stacks, the main material may be the same or different; the guest material may be the same or different.

[0142] For example, when the plurality of light-emitting devices 100 include a first light-emitting device 101, and the first light-emitting device 101 is used to emit blue light, the host material of the light-emitting layer 131 of the first light-emitting device 101 may be at least one material containing anthracene, and the guest material may be a fluorescent dopant. Moreover, when the host material includes two materials, the two materials may be isomers, homologues, or exciplexes.

[0143] In this case, the host material of the first light-emitting device 101 may include anthracene derivatives, such as 9,10-di(2-naphthyl)anthracene (ADN) and 2-methyl-9,10-dinaphthylanthracene (MADN); the guest material of the first light-emitting device 101 may include pyrene derivatives, fluorene derivatives, perylene derivatives, styrylamine derivatives or metal complexes, such as 2,5,8,11-tetra-tert-butylperylene (TBPe), 4,4'-bis[4-(diphenylamino)styryl]biphenyl (BDAVBi), 4,4'-bis[4-(di-p-tolylamino)styryl]biphenyl (DPAVBi) or bis(4,6-difluorophenylpyridine-C2,N)picolinyliridium (FIrpic), etc. The structural formulas of ADN and DPAVBi are as shown below.

[0144]

[0145] For example, when the plurality of light-emitting devices 100 include a second light-emitting device 102 and the second light-emitting device 102 is configured to emit green light, the host material of the light-emitting layer 131 of the second light-emitting device 102 may be an exciplex, and the guest material may be a phosphorescent dopant.

[0146] In this case, the host material of the second light-emitting device 102 may include coumarin dyes, quinacridone copper derivatives, polycyclic aromatic hydrocarbons, diamine anthracene derivatives or carbazole derivatives, such as N,N'-dimethylquinacridone (DMQA), N,N'-di-1-naphthyl-N,N'-diphenyl-[9,9'-anthracenes]-10,10'-diamine; N1,N1'-diphenyl-N1,N1'-dinaphthyl-9,9'-anthracenes-1,1'-diamine (BA-NPB) or 8-hydroxyquinoline aluminum (Alq3), etc.; the guest material of the second light-emitting device 102 may include a metal complex, such as tris(2-phenylpyridine)iridium (Ir(ppy)3) or di(2-phenylpyridine)iridium acetylacetonate (Ir(ppy)2(acac)). The structural formula of Ir(ppy)3 is as shown below.

[0147]

[0148] For example, when the plurality of light-emitting devices 100 include a third light-emitting device 103 and the third light-emitting device 103 is configured to emit red light, the host material of the light-emitting layer 131 of the third light-emitting device 103 may be an exciplex, and the guest material may be a phosphorescent dopant.

[0149] In this case, the main material of the third light-emitting device 103 may include a DCM series material, for example, 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminophenylvinyl)-4H-pyran (DCM), 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidine-9-enyl)-4H-pyran (DCJTB) or 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H- The guest material of the third light-emitting device 103 may include a metal complex, such as bis(1-phenyl-isoquinoline)(acetylacetonate)iridium(III) (Ir(piq)2(acac)), platinum(II) octaethylporphyrin (PtOEP) or bis(2-(2'-benzothienyl)pyridine-N,C3')(acetylacetonate)iridium (Ir(btp)2(acac)). The structural formulas of DCzDBT and Ir(piq)2(acac) are as shown below.

[0150]

[0151] As mentioned in the background, in the field of organic semiconductors, OLED light-emitting devices have the advantages of self-luminescence, large viewing angle, large contrast, fast response speed, wide operating temperature range, and can be prepared into flexible products. OLED display panels based on OLED light-emitting devices have the advantages of light, thin, self-luminescence, low power consumption, no backlight, wide viewing angle, and fast response. They have gradually replaced liquid crystal display panels (Liquid Crystal Display, LCD) to become a new generation of flat panel displays, and they also have great potential in flexible displays. At present, OLED display panels have been gradually applied to high-end display fields such as mobile phones, wearable devices, vehicles and computers, and foldable and curled OLED screens have also been used to meet people's requirements for large-screen experience and product portability. Moreover, organic electroluminescent materials have also made remarkable progress, which poses a strong challenge to traditional display materials and lighting materials.

[0152] Although great achievements have been made in the research of organic electroluminescent materials, there are still some urgent problems to be solved in the process of commercialization of OLED. For example, as mentioned above, in theory, the internal quantum efficiency of a light-emitting device containing phosphorescent materials (also called phosphorescent organic electroluminescent device) can reach 100%. However, in some implementations, due to the existence of non-radiative transition processes such as triplet-triplet annihilation and triplet-polaron annihilation in phosphorescent materials, its luminous efficiency is reduced to a certain extent.

[0153] The selection of the material of the light-emitting layer directly affects the performance of the light-emitting device (for example, the material of the light-emitting layer directly affects the efficiency of carrier recombination to form excitons). Therefore, it is necessary to propose a high-performance host material that can be used as the first host material of the OLED light-emitting device so that the light-emitting device 100 can achieve better performance. The better performance of the light-emitting device described herein includes at least one of higher luminous efficiency, longer service life and lower driving voltage.

[0154] Some embodiments of the present disclosure provide a light-emitting layer material, and the light-emitting layer material is selected from any one of the structures shown in the following general formula (I).

[0155]

[0156] Wherein, A1, A2 and A3 are the same or different and are independently selected from any one of substituted or unsubstituted C6-C30 aromatic rings and substituted or unsubstituted C2-C30 heteroaromatic rings. Wherein, the heteroatoms included in the heteroaromatic ring are, for example, nitrogen (N), silicon (Si), oxygen (O), sulfur (S) or selenium (Se).

[0157] X1, X2, X3 and X4 are the same or different and are independently selected from direct bonds, O, S, NR A , CRB R C and SiR D R E Among them, O is oxygen, S is sulfur, NR A For R A Substituted nitrogen, CR B R C For R B and R C Substituted carbon, SiR D R E For R D and R E Replaced silicon.

[0158] R A , R B , R C , R D and R E The same or different, are independently selected from any one of the structures represented by general formula (IA).

[0159]

[0160] L is selected from any one of direct bond, substituted or unsubstituted alkylene, substituted or unsubstituted cycloalkylene, substituted or unsubstituted heterocycloalkylene, substituted or unsubstituted alkenylene, substituted or unsubstituted alkynylene, substituted or unsubstituted arylene and substituted or unsubstituted heteroarylene. Among them, the heteroatoms included in the heterocycloalkylene and heteroarylene heteroaromatic rings are, for example, nitrogen (N), silicon (Si), oxygen (O), sulfur (S), selenium (Se), etc.

[0161] Ar is selected from any one of substituted or unsubstituted C6~C30 aryl, substituted or unsubstituted 3- to 30-membered heteroaryl, amino, substituted or unsubstituted mono-C1~C30 alkylamino, substituted or unsubstituted di-C1~C30 alkylamino, substituted or unsubstituted mono-C6~C30 arylamino, substituted or unsubstituted di-C6~C30 arylamino and substituted or unsubstituted C1~C30 alkyl C6~C30 arylamino.

[0162] Here, Cx aromatic ring refers to an aromatic ring having a total of x carbon (C) atoms, where x is a positive integer, and the same applies to the following. For understanding of other groups such as Cx heteroaromatic ring, Cx aryl, Cx alkylamino, etc., please refer to the above content, which will not be repeated here. In addition, alkyl refers to the general term for the remaining groups after one hydrogen atom is removed from an alkane, and alkylene refers to the general term for the remaining groups after two hydrogen atoms are removed from an alkane. For understanding of other groups such as cycloalkylene, heterocycloalkylene, heteroaryl, alkylamino, etc., please refer to the above content, which will not be repeated here. In addition, Z-membered heteroaryl refers to a heteroaryl group with Z as the number of atoms on the ring, where Z is a positive integer, and the same applies to the following.

[0163] X1, X2, X3 or X4 can be a direct bond, which means that the two atoms connected to X1, X2, X3 or X4 can be directly connected. For example, when X1 is a direct bond, the two atoms connected to X1 can be directly connected through a covalent bond (e.g., a single bond).

[0164] It is to be understood that in the case where L is selected from any of a direct bond, a substituted or unsubstituted alkylene, a substituted or unsubstituted cycloalkylene, a substituted or unsubstituted heterocycloalkylene, a substituted or unsubstituted alkenylene, a substituted or unsubstituted alkynylene, a substituted or unsubstituted arylene, and a substituted or unsubstituted heteroarylene, R A , R B , R C , R D or R E Ar in is connected to N, C or Si in X1, X2, X3 or X4 through L. For example, when X1 is NR A In the case of R A Ar in X1 is connected to N in X1 through L. Moreover, L can be a direct bond, which means R A , R B , R C , R D or R E Ar in X1, X2, X3 or X4 can be directly connected to N, C or Si in X1, X2, X3 or X4. A , L is a direct key, R A Ar in is the same as X1 and N in is directly connected via a single bond.

[0165] The selection range of Ar includes mono-C1~C30 alkylamino, di-C1~C30 alkylamino and C1~C30 alkyl C6~C30 arylamino. Among them, mono-C1~C30 alkylamino means that one hydrogen of the amino group is replaced by a C1~C30 alkyl group. Di-C1~C30 alkylamino means that both hydrogens of the amino group are replaced by a C1~C30 alkyl group, and the C1~C30 alkyl groups replacing the two hydrogens may be the same or different. C1~C30 alkyl C6~C30 arylamino means that one of the two hydrogens of the amino group is replaced by a C1~C30 alkyl group and the other is replaced by a C6~C30 aryl group, and the number of carbon atoms contained in the C1~C30 alkyl group and the C6~C30 aryl group may be the same or different. For the understanding of other groups such as mono-C6~C30 arylamino, di-C6~C30 arylamino, etc., please refer to the above content and will not be repeated here.

[0166] Illustratively, any one of A1, A2 and A3 can be selected from any one of a substituted or unsubstituted C6-C10 aromatic ring, a substituted or unsubstituted C6-C14 aromatic ring, a substituted or unsubstituted C6-C18 aromatic ring, a substituted or unsubstituted C6-C22 aromatic ring, a substituted or unsubstituted C2-C30 aromatic ring, a substituted or unsubstituted C6-C10 heteroaromatic ring, a substituted or unsubstituted C6-C14 heteroaromatic ring, a substituted or unsubstituted C6-C18 heteroaromatic ring, a substituted or unsubstituted C6-C22 heteroaromatic ring and a substituted or unsubstituted C2-C30 heteroaromatic ring.

[0167] For example, L can be selected from a direct bond, a substituted or unsubstituted C1-C6 alkylene, a substituted or unsubstituted C1-C12 alkylene, a substituted or unsubstituted C1-C18 alkylene, a substituted or unsubstituted C1-C24 alkylene, a substituted or unsubstituted C1-C30 alkylene, a substituted or unsubstituted C1-C6 cycloalkylene, a substituted or unsubstituted C1-C12 cycloalkylene, a substituted or unsubstituted C1-C18 cycloalkylene, a substituted or unsubstituted C1-C24 cycloalkylene, substituted or unsubstituted C1-C30 cycloalkylene, substituted or unsubstituted 3-7 membered heterocycloalkylene, substituted or unsubstituted 3-12 membered heterocycloalkylene, substituted or unsubstituted 3-18 membered heterocycloalkylene, substituted or unsubstituted 3-24 membered heterocycloalkylene, substituted or unsubstituted 3-30 membered heterocycloalkylene, substituted or unsubstituted C1-C6 alkenylene, substituted or unsubstituted C1-C12 alkenylene, substituted or unsubstituted C1-C18 alkenylene, substituted or unsubstituted C1-C24 alkenylene, substituted or unsubstituted C1-C30 alkenylene, substituted or unsubstituted C1-C6 alkynylene, substituted or unsubstituted C1-C12 alkynylene, substituted or unsubstituted C1-C18 alkynylene, substituted or unsubstituted C1-C24 alkynylene, substituted or unsubstituted C1-C30 alkynylene, substituted or unsubstituted C1-C6 arylene, substituted or unsubstituted any one of a substituted or unsubstituted C1-C12 arylene group, a substituted or unsubstituted C1-C18 arylene group, a substituted or unsubstituted C1-C24 arylene group, a substituted or unsubstituted C1-C30 arylene group, a substituted or unsubstituted 3- to 7-membered heteroarylene group, a substituted or unsubstituted 3- to 12-membered heteroarylene group, a substituted or unsubstituted 3- to 18-membered heteroarylene group, a substituted or unsubstituted 3- to 24-membered heteroarylene group, and a substituted or unsubstituted 3- to 30-membered heteroarylene group.

[0168] For example, Ar can be selected from substituted or unsubstituted C6-C10 aryl, substituted or unsubstituted C6-C14 aryl, substituted or unsubstituted C6-C18 aryl, substituted or unsubstituted C6-C22 aryl, substituted or unsubstituted C6-C30 aryl, substituted or unsubstituted 3-7 membered heteroaryl, substituted or unsubstituted 3-12 membered heteroaryl, substituted or unsubstituted 3-18 membered heteroaryl, substituted or unsubstituted 3-24 membered heteroaryl, substituted or unsubstituted 3-30 membered heteroaryl, amino , substituted or unsubstituted mono-C1~C6 alkylamino, substituted or unsubstituted mono-C1~C12 alkylamino, substituted or unsubstituted mono-C1~C18 alkylamino, substituted or unsubstituted mono-C1~C24 alkylamino, substituted or unsubstituted mono-C1~C30 alkylamino, substituted or unsubstituted di-C1~C6 alkylamino, substituted or unsubstituted di-C1~C12 alkylamino, substituted or unsubstituted di-C1~C18 alkylamino, substituted or unsubstituted di-C1~C24 alkylamino , substituted or unsubstituted di-C1~C30 alkylamino, substituted or unsubstituted mono-C6~C10 arylamino, substituted or unsubstituted mono-C6~C14 arylamino, substituted or unsubstituted mono-C6~C18 arylamino, substituted or unsubstituted mono-C6~C22 arylamino, substituted or unsubstituted mono-C6~C30 arylamino, substituted or unsubstituted di-C6~C10 arylamino, substituted or unsubstituted di-C6~C14 arylamino, substituted or unsubstituted di-C6~C18 arylamino The present invention can be any one of alkylamino, substituted or unsubstituted di-C6~C22 arylamino, substituted or unsubstituted di-C6~C30 arylamino, substituted or unsubstituted C1~C6 alkyl C6~C10 arylamino, substituted or unsubstituted C1~C12 alkyl C6~C14 arylamino, substituted or unsubstituted C1~C18 alkyl C6~C18 arylamino, substituted or unsubstituted C1~C24 alkyl C6~C22 arylamino and substituted or unsubstituted C1~C30 alkyl C6~C30 arylamino.

[0169] It should be noted that, when A1, A2 and A3 are substituted groups, and / or L is a substituted group, and / or Ar is a substituted group, the type and number of substituents are not limited here. Here, regarding the type of substituted groups that A1, A2 and A3 can choose to replace, the type of substituted groups that L can choose to replace, and the type of substituted groups that Ar can choose to replace, please refer to the above examples, which will not be repeated here. For example, any one of A1, A2 and A3 can be selected as a substituted C6~C10 aromatic ring; for another example, L can be selected as a substituted C1~C6 alkylene; for another example, Ar can be selected as a substituted C6~C10 aryl group.

[0170] For example, when A1, A2 and A3 are substituted groups, and / or L is a substituted group, and / or Ar is a substituted group, the number of substituted groups may be 1, 2, 3, 4 or 5.

[0171] Exemplarily, when A1, A2 and A3 are substituted groups, and / or L is a substituted group, and / or Ar is a substituted group, the substituted group may be any one of the following groups: deuterium, (C1-C5) alkyl, (C1-C10) alkyl, (C1-C20) alkyl, (C1-C30) alkyl, halo (C1-C5) alkyl, halo (C1-C10) alkyl, halo (C1-C20) alkyl, halo (C1-C30) alkyl, halogen, cyano, (C3-C7) cycloalkyl, (C3-C12) cycloalkyl, (C3-C20) cycloalkyl, (C3-C30) cycloalkyl, 5- to 7-membered heterocycloalkyl, (C2-C6) alkenyl, (C2-C10) alkenyl, (C3-C30) alkenyl, C2-C20)alkenyl, (C2-C30)alkenyl, (C2-C6)alkynyl, (C2-C10)alkynyl, (C2-C20)alkynyl, (C2-C30)alkynyl, (C6-C10)aryl, (C6-C14)aryl, (C6-C18)aryl, (C6-C22)aryl, (C6-C30)aryl, (C1-C6)alkoxy, (C1-C10)alkoxy, (C1-C20)alkoxy, (C1-C30)alkoxy, (C6-C10)aryloxy, (C6-C14)aryloxy, (C6-C18)aryloxy, (C6-C30)aryloxy, (C2-C6)heteroaryl, (C2-C10)heteroaryl, (C2-C20)heteroaryl, ( (C2-C30) heteroaryl, (C2-C6) heteroaryl substituted by (C6-C10) aryl, (C2-C10) heteroaryl substituted by (C6-C14) aryl, (C2-C20) heteroaryl substituted by (C6-C18) aryl, (C2-C30) heteroaryl substituted by (C6-C30) aryl, (C1-C6) alkyl substituted by (C6-C10) aryl, (C1-C14) aryl substituted (C1-C10) alkyl, (C6-C18) aryl substituted (C1-C20) alkyl, (C6-C30) aryl substituted (C1-C30) alkyl, (C1-C6) alkyl substituted (C6-C10) aryl, (C1-C10) alkyl substituted (C6-C14) aryl alkyl, (C1-C20) alkyl-substituted (C6-C18) aryl, (C1-C30) alkyl-substituted (C6-C30) aryl, (C6-C10) arylthio, (C6-C14) arylthio, (C6-C18) arylthio, (C6-C30) arylthio, mono(C1-C6) alkylamino, mono(C1-C10) alkylamino, mono(C1-C20) alkylamino, mono(C1-C30) alkylamino, di(C1-C6) alkylamino, di(C1-C10) alkylamino, di(C1-C20) alkylamino, di(C1-C30) alkylamino, mono(C6-C10) arylamino, mono(C6-C14) arylamino, mono(C6-C18) arylamino,mono(C6-C30)arylamino, di(C6-C10)arylamino, di(C6-C14)arylamino, di(C6-C18)arylamino, di(C6-C30)arylamino, (C1-C6)alkyl-substituted (C6-C10)arylamino, (C1-C10)alkyl-substituted (C6-C14)arylamino, (C1-C20)alkyl-substituted (C6-C18)arylamino, (C1-C30)alkyl (C6-C30)arylamino, di(C6-C10)arylboryl, di(C6-C14)arylboryl, di(C6-C18)arylboryl, di(C6-C30)arylboryl, di(C1-C10)alkylboryl, di(C1-C14)alkylboryl, di(C1-C18)alkylboryl, di(C1-C30)alkylboryl, (C1-C6)alkyl-substituted (C6-C10)arylboryl, (C1-C10)alkyl-substituted (C6-C14)arylboryl, (C1-C20)alkyl-substituted (C6-C18)arylboryl, (C1-C30)alkylboryl (C6-C30) arylboryl, tri(C1-C6) alkylsilyl, tri(C1-C10) alkylsilyl, tri(C1-C20) alkylsilyl, tri(C1-C30) alkylsilyl, di(C1-C6) alkyl(C6-C10) arylsilyl, di(C1-C10) alkyl(C6-C14) arylsilyl, di(C1-C20) alkyl(C6-C18) arylsilyl, di(C1-C30) alkyl(C6-C30) arylsilyl, (C1-C6 )alkyl-substituted di(C6-C10)arylsilyl, (C1-C10)alkyl-substituted di(C6-C14)arylsilyl, (C1-C20)alkyl-substituted di(C6-C18)arylsilyl, (C1-C30)alkyldi(C6-C30)arylsilyl, tri(C6-C10)arylsilyl, tri(C6-C14)arylsilyl, tri(C6-C18)arylsilyl, tri(C6-C30)arylsilyl, N-carbazolyl, carboxyl, nitro and hydroxyl.

[0172] Wherein, mono- or di-(C1-C30)alkylamino refers to mono-(C1-C30)alkylamino or di-(C1-C30)alkylamino, and the same applies below. For understanding of other groups such as mono- or di-(C6-C30)arylamino, etc., please refer to the above content, which will not be repeated here.

[0173] It should be understood that, when the light-emitting layer material is selected from the structure shown in the general formula (I), the light-emitting layer material includes a first condensed ring composed of A1, A2, A3, X1, X2, X3 and X4. For example, when the structure of the light-emitting layer material is as shown in the following formula (I-2), the structure of the first condensed ring is as shown in the IM part in formula (I-2), that is, the first condensed ring includes a naphthalene ring, a five-membered ring containing N, a first benzene ring, a six-membered ring containing N and M, and a second benzene ring fused in sequence. In other words, the ring atoms of the first condensed ring include atoms on the naphthalene ring, the first benzene ring and the second benzene ring, and also include N atoms connected between the naphthalene ring and the first benzene ring, and N atoms and M atoms connected between the first benzene ring and the second benzene ring. Here, with respect to M, R in (I-2), 12 , R 17 , R 11 For the meanings of , m, s, k, L1, L2, Ar1 and Ar2, please refer to the description in the subsequent sections and will not be repeated here.

[0174]

[0175] It can be understood that when the light-emitting layer material includes the first fused ring, the first fused ring has strong rigidity, which can make the light-emitting layer material have strong rigidity, so that the splitting energy level of the light-emitting layer material can be reduced, and the non-radiative transition of the light-emitting layer material can be reduced. In this way, when the light-emitting layer of the light-emitting device includes the light-emitting layer material, the efficiency of the light-emitting device can be improved. In addition, when the light-emitting layer material has strong rigidity, the light-emitting layer material has a higher glass transition temperature, which can improve the film forming property and thermal stability of the light-emitting layer material, and avoid the light-emitting layer material being affected by the Joule heat generated when the light-emitting device is operated by applying voltage. In this way, the film forming property (for example, the light-emitting layer forms a good amorphous film) and thermal stability of the light-emitting layer can be improved, and the light-emitting life of the light-emitting device can be improved, and the degradation of the performance of the light-emitting device due to poor stability can be avoided (for example: avoiding the cracking of the material of the light-emitting layer during the evaporation process), and the operational stability of the material of the light-emitting layer in the light-emitting layer formation process can be improved (for example: the film state during the light-emitting layer formation process can be improved).

[0176] Here, there is no limitation on the number of ring atoms of A1, A2 or A3. The ring atoms refer to the atoms participating in the ring formation. For example, the ring atoms of the benzene ring include 6 carbon atoms participating in the ring formation, that is, the number of ring atoms of the benzene ring is 6; for another example, the ring atoms of the naphthalene ring include 10 carbon atoms participating in the ring formation, that is, the number of ring atoms of the naphthalene ring is 10.

[0177] In some examples, the number of ring atoms of A1, A2, and A3 is less than 10.

[0178] In some embodiments, at least one of A1, A2 and A3 is a fused aromatic ring or a fused heteroaromatic ring having 10 or more atoms in the ring.

[0179] Illustratively, at least one of A1, A2 and A3 is a fused aromatic ring, and the number of atoms on the fused aromatic ring is 10, 14, 18, 22 or 30, etc.

[0180] Illustratively, at least one of A1, A2 and A3 is a fused heteroaromatic ring, and the number of atoms in the fused heteroaromatic ring is 10, 14, 18, 22 or 30, etc.

[0181] It can be understood that when the number of atoms on the first condensed ring is large, the rigidity of the first condensed ring is strong. Therefore, by setting at least one of A1, A2 and A3 as a condensed aromatic ring or a condensed heteroaromatic ring with a number of atoms on the ring greater than or equal to 10, the number of atoms on the ring of the first condensed ring can be large, so that the light-emitting layer material has strong rigidity, so that the effect of the light-emitting layer material on improving the efficiency of the light-emitting device can be improved, and the effect of the light-emitting layer material on improving the film forming property and thermal stability of the light-emitting layer can be improved, so that the light-emitting life of the light-emitting device and the operating stability of the light-emitting layer material in the light-emitting layer formation process are improved.

[0182] In some examples, X1, X2, X3 and X4 are all selected from one of a direct bond, O and S. In this case, in the structure of the light-emitting layer material, no substituent is connected to the first condensed ring, or the substituent of the first condensed ring is connected to A1, A2 or A3.

[0183] Among them, when the substituent of the first condensed ring is connected to A1, A2 or A3, the molecular weight of the light-emitting layer material can be increased to a certain extent, so that the light-emitting layer material is not easy to crystallize in the light-emitting layer formation process (for example, evaporation process), and the influence of the crystallization of the light-emitting layer material on the process can be prevented (for example, the light-emitting layer material can be prevented from crystallizing and clogging the crucible holes in the evaporation process).

[0184] In some embodiments, at least one of X1, X2, X3 and X4 is selected from NR A , CR B R C and SiR D R E That is, X1, X2, X3 and X4 are not all selected from one of a direct bond, O and S.

[0185] In some examples, one of X1, X2, X3, and X4 is selected from NR A , CR B R C and SiR D RE In some other examples, at least two of X1, X2, X3 and X4 are selected from NR A , CR B R C and SiR D R E Any of .

[0186] Here, about NR A , CR B R C and SiR D R E For an understanding of NR, please refer to the previous section on A , CR B R C and SiR D R E Description.

[0187] Through the above arrangement, in the structure of the light-emitting layer material, a substituent is connected to the first condensed ring, and the substituent of the first condensed ring is connected to N, C or S. Based on the stereo configuration of the N-containing group, the C-containing group or the Si-containing group, the substituent connected to N, C or S is located in a different plane from the first condensed ring. In this way, on the one hand, the stereo configuration and molecular weight of the light-emitting layer material can be increased, so that the light-emitting layer material is not easy to crystallize, and the influence of the crystallization of the light-emitting layer material on the process can be prevented (for example, the light-emitting layer material can be prevented from crystallizing and blocking the crucible hole in the evaporation process). On the other hand, the light-emitting layer material can have a larger three-dimensional spatial configuration, so that the light-emitting layer material can increase the distance between different molecules of the dispersed guest material, that is, the role of the dispersed guest material can be played, the quenching of the guest material excitons can be reduced, and the luminescence efficiency of the guest material can be avoided due to quenching. Therefore, through the above arrangement, the luminescence efficiency of the light-emitting layer can be improved, and the efficiency of the light-emitting device can be further improved.

[0188] In some embodiments, at least one of X1, X2, X3 and X4 is NR A .

[0189] In some examples, one of X1, X2, X3, and X4 is NR A In some other examples, at least two of X1, X2, X3, and X4 are NR A .

[0190] Through the above arrangement, on the basis of increasing the stereo configuration and molecular weight of the light-emitting layer material, at least one of X1, X2, X3 and X4 can be made to contain a ring atom of N atom, so that in the structure of the light-emitting layer material, A1 and A2, and / or A2 and A3 are connected at least by N atom. In this way, based on the stereo configuration containing the N group, the planarity between A1 and A2, and / or A2 and A3 can be better, and the planarity of the first fused ring can be improved. In this way, firstly, effective π-π stacking can be made between A1, A2 and A3, so that the carrier mobility of the light-emitting layer material is improved, and the exciton recombination rate in the light-emitting layer is higher, which can improve the efficiency of the light-emitting device and reduce the driving voltage of the light-emitting device. Secondly, the T1 energy level of the first fused ring can be made lower, so that the T1 energy level of the light-emitting layer material matches the performance requirements of the light-emitting device (for example: the third light-emitting device for emitting red light), for example, better energy transfer can be achieved between the guest material emitting red light, and energy loss can be reduced to improve the efficiency of the light-emitting device. Furthermore, the structure of the first fused ring can be selected to achieve energy level adjustment of the light-emitting layer material, so that the materials of the adjacent functional layers have more choices during the screening process.

[0191] In addition, since the N atom has a strong electron-donating ability, at least one of X1, X2, X3 and X4 is NR A In this case, under the synergistic effect of the conjugated effect of the first fused ring, the HOMO electron cloud of the light-emitting layer material can be distributed on the first fused ring, which is beneficial to the separation of the HOMO (Highest Occupied Molecular Orbital) electron cloud and the LUMO (Lowest Unoccupied Molecular Orbital) electron cloud of the light-emitting layer material, and can improve the feasibility of energy level regulation of the light-emitting layer material.

[0192] It should be understood that among X1, X2, X3 and X4, at least one is selected from NR A , CR B R C and SiR D R E In any case, the structure represented by general formula (I) includes R A , R B , R C , R D and R E At least one of, that is, the structure represented by the general formula (I) includes at least one L and at least one Ar. Hereinafter, the case of L and Ar included in the general formula (I) will be exemplarily described.

[0193] In some embodiments, the general formula (I) includes R A, R B , R C , R D and R E In at least one of the above, Ar is a condensed aromatic ring or a condensed heteroaromatic ring.

[0194] That is, at least one of the at least one Ar included in the general formula (I) is a fused aromatic ring or a fused heteroaromatic ring.

[0195] In some examples, the general formula (I) includes R A , R B , R C , R D and R E In at least one of the above, Ar is a fused heteroaromatic ring, and the T1 energy level of the fused heteroaromatic ring is smaller than the T1 energy level of the first fused ring.

[0196] It can be understood that the fused aromatic ring or fused heteroaromatic ring has strong rigidity. Therefore, through the above arrangement, Ar included in the general formula (I) has strong rigidity, which can make the light-emitting layer material have strong rigidity, so that the effect of the light-emitting layer material on improving the efficiency of the light-emitting device can be improved, and the effect of the light-emitting layer material on improving the film-forming property and thermal stability of the light-emitting layer can be improved, so that the light-emitting life of the light-emitting device and the operating stability of the light-emitting layer material in the light-emitting layer formation process are improved.

[0197] Moreover, in the case where at least one of the at least one Ar included in the general formula (I) is a fused heteroaromatic ring, the at least one Ar included in the general formula (I) contains a heteroatom; on the one hand, the T1 energy level of Ar can be relatively high, so that the T1 energy level of Ar can be higher than the T1 energy level of the first fused ring, so that the T1 electron cloud of the light-emitting layer material is distributed on the first fused ring, and in the case where the T1 energy level of the first fused ring is low, the T1 energy level of the light-emitting layer material is low, so that the T1 energy level of the light-emitting layer material matches the performance requirements of the light-emitting device (for example: a third light-emitting device for emitting red light), for example, better energy transfer can be achieved between the guest material emitting red light, reducing energy loss, so as to improve the efficiency of the light-emitting device. On the other hand, in the case where at least one Ar included in the general formula (I) contains a heteroatom, the polarity of Ar can be increased, so that the charge transfer interface between the light-emitting layer and the film layer adjacent thereto is better, which is conducive to the transfer of charges and can reduce the driving voltage of the light-emitting device. Here, the film layer adjacent to the light-emitting layer includes but is not limited to an electron blocking layer and / or a hole blocking layer.

[0198] In some embodiments, the general formula (I) includes R A , R B , R C , R D and RE In at least one of them, Ar is a fused aromatic ring or a fused heteroaromatic ring having a smaller number of ring atoms than G, and G is the number of ring atoms of the fused ring (i.e., the first fused ring) composed of A1, A2, A3, X1, X2, X3 and X4.

[0199] That is, among at least one Ar included in the general formula (I), at least one is a fused aromatic ring or a fused heteroaromatic ring having a smaller number of atoms than G.

[0200] For example, the structure of the light-emitting layer material is as shown in the above formula (I-2), in which the number of atoms on the ring of the condensed ring (i.e., the first condensed ring) composed of A1, A2, A3, X1, X2, X3, and X4 is 25. Then, Ar1 and Ar2 in the structure of the light-emitting layer material are both condensed aromatic rings or condensed heteroaromatic rings with less than 25 atoms on the ring.

[0201] Here, for the understanding of the atoms on the ring and the number of atoms on the ring, please refer to the description of the atoms on the ring and the number of atoms on the ring in the aforementioned part, which will not be repeated here.

[0202] For example, the difference between the number of atoms in the ring of Ar included in the general formula (I) and G can be 1 to 20, for example, 1, 3, 5, 6, 7, 8, 9, 13, 15 or 20.

[0203] Through the above arrangement, on the one hand, the conjugation effect of the first fused ring is stronger than the conjugation effect of Ar, so that the T1 energy level of the first fused ring can be lower than the T1 energy level of Ar, so that the T1 electron cloud of the light-emitting layer material is distributed on the first fused ring, and the T1 energy level of the light-emitting layer material is lower, so that the T1 energy level of the light-emitting layer material matches the performance requirements of the light-emitting device (for example: the third light-emitting device for emitting red light), for example, better energy transfer can be achieved between the guest material emitting red light, reducing energy loss to improve the efficiency of the light-emitting device. On the other hand, the LUMO electron cloud of the light-emitting layer material can be distributed on Ar, which is beneficial to the separation of the HOMO electron cloud and the LUMO electron cloud of the light-emitting layer material, and can improve the feasibility of energy level regulation of the light-emitting layer material.

[0204] In some examples, the general formula (I) includes R A , R B , R C , R D and R E In at least one of the above, the structural formula of Ar can be shown as follows: Wherein, * in the following structural formula represents the connection site where Ar and L are connected.

[0205]

[0206]

[0207]

[0208]

[0209] In some embodiments, the general formula (I) includes R A , R B , R C , R D and R E In at least one of the above, Ar is a fused aromatic ring or a fused heteroaromatic ring having 12 to 19 atoms in the ring.

[0210] That is, among at least one Ar included in the general formula (I), at least one is a fused aromatic ring or a fused heteroaromatic ring having 12 to 19 atoms on the ring.

[0211] For example, the R included in the general formula (I) A , R B , R C , R D and R E At least one of the fused heteroaromatic rings is a fused aromatic ring, and the number of atoms in the fused heteroaromatic ring is 12, 13, 14, 15, 16, 17, 18 or 19.

[0212] For example, the R included in the general formula (I) A , R B , R C , R D and R E At least one of the rings is a fused heteroaromatic ring, and the number of atoms in the fused heteroaromatic ring is 12, 13, 14, 15, 16, 17, 18 or 19.

[0213] Through the above arrangement, the number of ring atoms of Ar included in the general formula (I) is relatively small, so that the number of ring atoms of Ar included in the general formula (I) can be made smaller than the number of ring atoms of the first condensed ring. As mentioned above, firstly, the T1 energy level of the light-emitting layer material can be made lower, so that the T1 energy level of the light-emitting layer material matches the performance requirements of the light-emitting device (for example, the third light-emitting device for emitting red light); secondly, it is beneficial to the separation of the HOMO electron cloud and the LUMO electron cloud of the light-emitting layer material, which can improve the feasibility of energy level regulation of the light-emitting layer material.

[0214] In some embodiments, the general formula (I) includes R A , R B , R C , R D and R EIn at least one of them, Ar is selected from any one of the structures represented by the following general formula (IB-1), general formula (IB-2), general formula (IB-3) and general formula (IB-4).

[0215]

[0216] Wherein X5 is selected from direct bond, O, S, NR F and CR G R H Any of NR F For R F Substituted nitrogen. CR G R H For R G and R H Substituted carbon.

[0217] X6 is selected from O, S, Se, NR I and CR J R K Any one of the following. Wherein, Se is selenium. I For R I Substituted nitrogen. CR J R K For R J and R K Substituted carbon.

[0218] R F , R G , R H , R I , R J and R Kthe same or different, and are independently selected from deuterium, (C1-C30) alkyl, halo (C1-C30) alkyl, halogen, cyano, (C3-C30) cycloalkyl, 5- to 7-membered heterocycloalkyl, (C2-C30) alkenyl, (C2-C30) alkynyl, (C6-C30) aryl, (C1-C30) alkoxy, (C6-C30) aryloxy, (C2-C30) heteroaryl, (C6-C30) aryl-substituted (C2-C30) heteroaryl, (C6-C30) aryl-substituted (C1-C30) alkyl, (C1-C30) alkyl-substituted (C6-C30) aryl, (C6-C30) any one of a (C1-C30) arylthio group, a mono- or di-(C1-C30) alkylamino group, a mono- or di-(C6-C30) arylamino group, a (C1-C30) alkyl(C6-C30) arylamino group, a di(C6-C30) arylboryl group, a di(C1-C30) alkylboryl group, a (C1-C30) alkyl(C6-C30) arylboryl group, a tri(C1-C30) alkylsilyl group, a di(C1-C30) alkyl(C6-C30) arylsilyl group, a (C1-C30) alkyldi(C6-C30)arylsilyl group, a tri(C6-C30) arylsilyl group, an N-carbazolyl group, a carboxyl group, a nitro group and a hydroxyl group.

[0219] R1~R 10 The same or different are independently selected from hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C1-C12 haloalkyl, substituted or unsubstituted C1-C12 alkoxy, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C6-60 aryl and substituted or unsubstituted C3-C60 heteroaryl.

[0220] The value of a is selected from any one of 0, 1, 2 and 3, the values ​​of b and c are the same or different, and are independently selected from any one of 0, 1, 2, 3 and 4, and the value of a, b and c is less than or equal to 10.

[0221] The values ​​of d and f are the same or different and are independently selected from any one of 0, 1, 2 and 3, the value of e is selected from any one of 0, 1, 2, 3 and 4, and the value of d, f and e is less than or equal to 9.

[0222] The value of g is selected from any one of 0, 1, 2, 3, 4, 5 and 6.

[0223] The values ​​of h and i are the same or different and are independently selected from any one of 0, 1, 2 and 3, the value of j is selected from any one of 0, 1, 2, 3 and 4, and the value of d, f and e is less than or equal to 9.

[0224] Here, X5 may be a direct bond, which means that the six-membered ring with the substituent R4 may be directly connected to the six-membered ring with the substituent R5 via a chemical bond (eg, a single bond).

[0225] (R1) shown in the general formula (IB-1) a The positional relationship between the six-membered ring connected thereto refers to (R1) a It can be connected to any a carbon of the six-membered ring. For example, when a=1, R1 can be connected to any one of carbon No. 1, carbon No. 2 and carbon No. 3; when a=2, two R1 can be connected to any two of carbon No. 1, carbon No. 2 and carbon No. 3. b 、(R3) c 、(R4) d 、(R5) e 、(R6) f 、(R7) g 、(R8) h 、(R9) i and (R 10 ) j For understanding of the position of, please refer to the above about (R1) a The description is not repeated here.

[0226] For example, R F , R G , R H , R I , R J and R Kany one of which may be selected from deuterium, (C1-C5) alkyl, (C1-C10) alkyl, (C1-C20) alkyl, (C1-C30) alkyl, halo (C1-C5) alkyl, halo (C1-C10) alkyl, halo (C1-C20) alkyl, halo (C1-C30) alkyl, halogen, cyano, (C3-C7) cycloalkyl, (C3-C12) cycloalkyl, (C3-C20) cycloalkyl, (C3-C30) cycloalkyl, 5- to 7-membered heterocycloalkyl, (C2-C6) alkenyl, (C2-C10) alkenyl, (C2-C20) alkenyl, (C2-C30) alkenyl, (C2-C6) alkynyl, (C2-C10) alkynyl, (C2-C20) alkynyl, (C2-C 30)alkynyl, (C6-C10)aryl, (C6-C14)aryl, (C6-C18)aryl, (C6-C22)aryl, (C6-C30)aryl, (C1-C6)alkoxy, (C1-C10)alkoxy, (C1-C20)alkoxy, (C1-C30)alkoxy, (C6-C10)aryloxy, (C6-C14)aryloxy, (C6-C18)aryloxy, (C6-C30)aryloxy, (C2-C6)heteroaryl, (C2-C10)heteroaryl, (C2-C20)heteroaryl, (C2-C30)heteroaryl, (C6-C10)aryl substituted (C2-C6)heteroaryl, (C6-C14)aryl substituted (C2-C10)heteroaryl aryl, (C6-C18)aryl-substituted (C2-C20)heteroaryl, (C6-C30)aryl-substituted (C2-C30)heteroaryl, (C6-C10)aryl-substituted (C1-C6)alkyl, (C6-C14)aryl-substituted (C1-C10)alkyl, (C6-C18)aryl-substituted (C1-C20)alkyl, (C6-C30)aryl-substituted (C1-C30)alkyl, (C1-C6)alkyl-substituted (C6-C10)aryl, (C1-C10)alkyl-substituted (C6-C14)aryl, (C1-C20)alkyl-substituted (C6-C18)aryl, (C1-C30)alkyl-substituted (C6-C30)aryl, (C6-C1 0) arylthio, (C6-C14) arylthio, (C6-C18) arylthio, (C6-C30) arylthio, mono(C1-C6) alkylamino, mono(C1-C10) alkylamino, mono(C1-C20) alkylamino, mono(C1-C30) alkylamino, di(C1-C6) alkylamino, di(C1-C10) alkylamino, di(C1-C20) alkylamino, di(C1-C30) alkylamino, mono(C6-C10) arylamino, mono(C6-C14) arylamino, mono(C6-C18) arylamino, mono(C6-C30) arylamino, di(C6-C10) arylamino, di(C6-C14) arylamino, di(C6-C18) arylamino,di(C6-C30)arylamino, (C1-C6)alkyl-substituted (C6-C10)arylamino, (C1-C10)alkyl-substituted (C6-C14)arylamino, (C1-C20)alkyl-substituted (C6-C18)arylamino, (C1-C30)alkyl (C6-C30)arylamino, di(C6-C10)arylboryl, di(C6-C14)arylboryl, di(C6-C18)arylboryl, di(C6-C30)arylboryl, di(C6-C10)arylboryl, di(C6-C14)arylboryl, di(C6-C18)arylboryl, di(C6-C30)arylboryl, di( C1-C10) alkylboryl, di(C1-C14) alkylboryl, di(C1-C18) alkylboryl, di(C1-C30) alkylboryl, (C1-C6) alkyl-substituted (C6-C10) arylboryl, (C1-C10) alkyl-substituted (C6-C14) arylboryl, (C1-C20) alkyl-substituted (C6-C18) arylboryl, (C1-C30) alkyl (C6-C30) arylboryl, tri(C1-C6) alkylsilyl, tri(C 1-C10) alkylsilyl, tri(C1-C20) alkylsilyl, tri(C1-C30) alkylsilyl, di(C1-C6) alkyl(C6-C10) arylsilyl, di(C1-C10) alkyl(C6-C14) arylsilyl, di(C1-C20) alkyl(C6-C18) arylsilyl, di(C1-C30) alkyl(C6-C30) arylsilyl, (C1-C6) alkyl-substituted di(C6-C10) arylsilyl Any one of a silyl group, a (C1-C10) alkyl-substituted di(C6-C14) arylsilyl group, a (C1-C20) alkyl-substituted di(C6-C18) arylsilyl group, a (C1-C30) alkyldi(C6-C30) arylsilyl group, a tri(C6-C10) arylsilyl group, a tri(C6-C14) arylsilyl group, a tri(C6-C18) arylsilyl group, a tri(C6-C30) arylsilyl group, an N-carbazolyl group, a carboxyl group, a nitro group and a hydroxyl group.

[0227] For example, R1 to R 10Any one of the following may be selected from hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C8 alkyl, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C1-C5 haloalkyl, substituted or unsubstituted C1-C8 haloalkyl, substituted or unsubstituted C1-C12 haloalkyl, substituted or unsubstituted C1-C5 alkoxy, substituted or unsubstituted C1-C7 alkoxy, substituted or unsubstituted C1-C12 alkoxy, substituted or unsubstituted C3-C6 cycloalkyl, substituted or Any one of unsubstituted C3~C10 cycloalkyl, substituted or unsubstituted C6~C10 aryl, substituted or unsubstituted C6~C14 aryl, substituted or unsubstituted C6~C22 aryl, substituted or unsubstituted C6~C30 aryl, substituted or unsubstituted C6~C60 aryl, substituted or unsubstituted C3~C10 heteroaryl, substituted or unsubstituted C3~C14 heteroaryl, substituted or unsubstituted C3~C22 heteroaryl, substituted or unsubstituted C3~C30 heteroaryl and substituted or unsubstituted C3~C60 heteroaryl.

[0228] It should be noted that in R1~R 10 When any one of R1 to R2 is a substituted group, the type and number of the substituents are not limited. 10 The types of optional substituent groups can be referred to the above examples, which will not be repeated here. 10 Any of them can be selected as a substituted C1-C7 alkoxy group.

[0229] For example, in R1~R 10 When any one of the groups is a substituted group, the number of the substituted groups may be 1, 2, 3, 4 or 5.

[0230] For example, in R1~R 10When any one of the following is a substituted group, the substituted group may be any one of the following groups: deuterium, (C1-C5) alkyl, (C1-C10) alkyl, (C1-C20) alkyl, (C1-C30) alkyl, halo (C1-C5) alkyl, halo (C1-C10) alkyl, halo (C1-C20) alkyl, halo (C1-C30) alkyl, halogen, cyano, (C3-C7) cycloalkyl, (C3-C12) cycloalkyl, (C3-C20) cycloalkyl, (C3-C30) cycloalkyl, 5-membered to 7-membered heterocycloalkyl, (C2-C6) alkenyl, (C2-C10) alkenyl, (C2-C20) alkenyl, (C2-C30) alkenyl, (C2-C6) alkynyl, (C 2-C10)alkynyl, (C2-C20)alkynyl, (C2-C30)alkynyl, (C6-C10)aryl, (C6-C14)aryl, (C6-C18)aryl, (C6-C22)aryl, (C6-C30)aryl, (C1-C6)alkoxy, (C1-C10)alkoxy, (C1-C20)alkoxy, (C1-C30)alkoxy, (C6-C10)aryloxy, (C6-C14)aryloxy, (C6-C18)aryloxy, (C6-C30)aryloxy, (C2-C6)heteroaryl, (C2-C10)heteroaryl, (C2-C20)heteroaryl, (C2-C30)heteroaryl, (C6-C10)aryl substituted (C2-C6) heteroaryl, (C6-C14) aryl-substituted (C2-C10) heteroaryl, (C6-C18) aryl-substituted (C2-C20) heteroaryl, (C6-C30) aryl-substituted (C2-C30) heteroaryl, (C6-C10) aryl-substituted (C1-C6) alkyl, (C6-C14) aryl-substituted (C1-C10) alkyl, (C6-C18) aryl-substituted (C1-C20) alkyl, (C6-C30) aryl-substituted (C1-C30) alkyl, (C1-C6) alkyl-substituted (C6-C10) aryl, (C1-C10) alkyl-substituted (C6-C14) aryl, (C1-C20) alkyl-substituted (C6-C18) aryl, (C1-C10) alkyl-substituted (C6-C14) aryl, (C1-C20) alkyl-substituted (C6-C18) aryl, (C1-C10) alkyl-substituted (C6-C14) aryl -C30) alkyl-substituted (C6-C30) aryl, (C6-C10) arylthio, (C6-C14) arylthio, (C6-C18) arylthio, (C6-C30) arylthio, mono(C1-C6) alkylamino, mono(C1-C10) alkylamino, mono(C1-C20) alkylamino, mono(C1-C30) alkylamino, di(C1-C6) alkylamino, di(C1-C10) alkylamino, di(C1-C20) alkylamino, di(C1-C30) alkylamino, mono(C6-C10) arylamino, mono(C6-C14) arylamino, mono(C6-C18) arylamino, mono(C6-C30) arylamino, di(C6-C10) arylamino,di(C6-C14)arylamino, di(C6-C18)arylamino, di(C6-C30)arylamino, (C1-C6)alkyl-substituted (C6-C10)arylamino, (C1-C10)alkyl-substituted (C6-C14)arylamino, (C1-C20)alkyl-substituted (C6-C18)arylamino, (C1-C30)alkyl (C6-C30)arylamino, di(C6-C10)arylboryl, di(C6-C14)arylboryl, di(C6-C1 8) arylboryl, di(C6-C30)arylboryl, di(C1-C10)alkylboryl, di(C1-C14)alkylboryl, di(C1-C18)alkylboryl, di(C1-C30)alkylboryl, (C1-C6)alkyl-substituted (C6-C10)arylboryl, (C1-C10)alkyl-substituted (C6-C14)arylboryl, (C1-C20)alkyl-substituted (C6-C18)arylboryl, (C1-C30)alkyl (C6-C30)arylboryl, tri(C1-C20)alkyl-substituted (C6-C18)arylboryl, tri(C1-C30)alkyl (C6-C30)arylboryl, tri(C1-C30)alkyl (C1-C6) alkylsilyl, tri(C1-C10) alkylsilyl, tri(C1-C20) alkylsilyl, tri(C1-C30) alkylsilyl, di(C1-C6) alkyl(C6-C10) arylsilyl, di(C1-C10) alkyl(C6-C14) arylsilyl, di(C1-C20) alkyl(C6-C18) arylsilyl, di(C1-C30) alkyl(C6-C30) arylsilyl, (C1-C6) alkyl-substituted di(C1-C10) alkyl(C6-C14) arylsilyl (C6-C10) arylsilyl, (C1-C10) alkyl-substituted di(C6-C14) arylsilyl, (C1-C20) alkyl-substituted di(C6-C18) arylsilyl, (C1-C30) alkyldi(C6-C30) arylsilyl, tri(C6-C10) arylsilyl, tri(C6-C14) arylsilyl, tri(C6-C18) arylsilyl, tri(C6-C30) arylsilyl, N-carbazolyl, carboxyl, nitro and hydroxyl.

[0231] It is understood that in the general formula (I), R A , R B , R C , R D and R E In the case where Ar in at least one of the above is selected from any one of the structures represented by the general formula (IB-1), the general formula (IB-2), the general formula (IB-3) and the general formula (IB-4), in the case where R A , R B , R C , R D and R EIn at least one of them, Ar is a fused aromatic ring or a fused heteroaromatic ring with a ring atom number ranging from 12 to 19. Thus, as described above, the ring atom number of Ar included in the general formula (I) can be made smaller than the ring atom number of the first fused ring. Firstly, the T1 energy level of the light-emitting layer material can be made lower, so that the T1 energy level of the light-emitting layer material matches the performance requirements of the light-emitting device (for example, a third light-emitting device for emitting red light); secondly, it is beneficial to the separation of the HOMO electron cloud and the LUMO electron cloud of the light-emitting layer material, and the feasibility of energy level regulation of the light-emitting layer material can be improved.

[0232] Furthermore, in the general formula (I), R A , R B , R C , R D and R E In the case where Ar in at least one of them is selected from any one of the structures shown in general formula (IB-1), general formula (IB-2) and general formula (IB-4), at least one of the at least one Ar included in general formula (I) can be a fused heteroaromatic ring. In this way, as described above, firstly, the T1 electron cloud of the light-emitting layer material can be distributed on the first fused ring, so that the T1 energy level of the light-emitting layer material is lower, and the T1 energy level of the light-emitting layer material matches the performance requirements of the light-emitting device (for example: the third light-emitting device for emitting red light). Secondly, the polarity of Ar can be increased, so that the charge transfer interface between the light-emitting layer and the film layer adjacent to it is better, and the driving voltage of the light-emitting device can be reduced.

[0233] In some examples, the general formula (I) includes R A , R B , R C , R D and R E In at least one of the above, Ar is selected from one of the structures shown in the following general formula (IB-1); in this case, the structure of Ar included in the general formula (I) can be shown in the following formula. Wherein, * in the following structural formula represents the connection site where Ar is connected to L.

[0234]

[0235]

[0236] In some examples, the general formula (I) includes R A , R B , R C , R D and R EIn at least one of the above, Ar is selected from one of the structures shown in the following general formula (IB-2); in this case, the structure of Ar included in the general formula (I) can be shown in the following formula. Wherein, * in the following structural formula represents the connection site where Ar is connected to L.

[0237]

[0238]

[0239] In some examples, R included in the general formula (I) A , R B , R C , R D and R E In at least one of the above, Ar is selected from one of the structures shown in the following general formula (IB-3); in this case, the structure of Ar included in the general formula (I) can be shown in the following formula. Wherein, * in the following structural formula represents the connection site where Ar is connected to L.

[0240]

[0241] In some examples, the general formula (I) includes R A , R B , R C , R D and R E In at least one of the above, Ar is selected from one of the structures shown in the following general formula (IB-4); in this case, the structure of Ar included in the general formula (I) can be shown in the following formula. Wherein, * in the following structural formula represents the connection site where Ar is connected to L.

[0242]

[0243]

[0244] In some embodiments, at least one of A1, A2, and A3 comprises deuterium.

[0245] In some examples, one of A1, A2, and A3 contains deuterium. In other examples, at least two of A1, A2, and A3 contain deuterium.

[0246] Illustratively, any one of A1, A2 and A3 can be selected from a substituted or unsubstituted C6-C10 aromatic ring containing deuterium, a substituted or unsubstituted C6-C14 aromatic ring containing deuterium, a substituted or unsubstituted C6-C18 aromatic ring containing deuterium, a substituted or unsubstituted C6-C22 aromatic ring containing deuterium, a substituted or unsubstituted C2-C30 aromatic ring containing deuterium, a substituted or unsubstituted C6-C10 heteroaromatic ring containing deuterium, a substituted or unsubstituted C6-C14 heteroaromatic ring containing deuterium, a substituted or unsubstituted C6-C18 heteroaromatic ring containing deuterium, a substituted or unsubstituted C6-C22 heteroaromatic ring containing deuterium and a substituted or unsubstituted C2-C30 heteroaromatic ring containing deuterium.

[0247] In some embodiments, at least one of X1, X2, X3 and X4 is selected from NR A , CR B R C and SiR D R E Any of R A , R B , R C , R D and R E At least one of the L's contains deuterium.

[0248] In some examples, R A , R B , R C , R D and R E In some examples, R A , R B , R C , R D and R E At least two of the L's contain deuterium.

[0249] For example, R A , R B , R C , R D and R EAny of L in the above may be selected from substituted or unsubstituted C1-C6 alkylene containing deuterium, substituted or unsubstituted C1-C12 alkylene containing deuterium, substituted or unsubstituted C1-C18 alkylene containing deuterium, substituted or unsubstituted C1-C24 alkylene containing deuterium, substituted or unsubstituted C1-C30 alkylene containing deuterium, substituted or unsubstituted C1-C6 cycloalkylene containing deuterium, substituted or unsubstituted C1-C12 cycloalkylene containing deuterium, substituted or unsubstituted C1-C18 cycloalkylene containing deuterium, substituted or unsubstituted substituted or unsubstituted C1-C24 cycloalkylene, substituted or unsubstituted C1-C30 cycloalkylene containing deuterium, substituted or unsubstituted 3-7 membered heterocycloalkylene containing deuterium, substituted or unsubstituted 3-12 membered heterocycloalkylene containing deuterium, substituted or unsubstituted 3-18 membered heterocycloalkylene containing deuterium, substituted or unsubstituted 3-24 membered heterocycloalkylene containing deuterium, substituted or unsubstituted 3-30 membered heterocycloalkylene containing deuterium, substituted or unsubstituted C1-C6 alkenylene containing deuterium, substituted or unsubstituted C1-C12 alkenylene containing deuterium, deuterated or unsubstituted C1-C18 alkenylene, deuterated or unsubstituted C1-C24 alkenylene, deuterated or unsubstituted C1-C30 alkenylene, deuterated or unsubstituted C1-C6 alkynylene, deuterated or unsubstituted C1-C12 alkynylene, deuterated or unsubstituted C1-C18 alkynylene, deuterated or unsubstituted C1-C24 alkynylene, deuterated or unsubstituted C1-C30 alkynylene, deuterated or unsubstituted C1-C6 arylene, deuterated or unsubstituted or any one of an unsubstituted C1-C12 arylene group, a substituted or unsubstituted C1-C18 arylene group containing deuterium, a substituted or unsubstituted C1-C24 arylene group containing deuterium, a substituted or unsubstituted C1-C30 arylene group containing deuterium, a substituted or unsubstituted 3- to 7-membered heteroarylene group containing deuterium, a substituted or unsubstituted 3- to 12-membered heteroarylene group containing deuterium, a substituted or unsubstituted 3- to 18-membered heteroarylene group containing deuterium, a substituted or unsubstituted 3- to 24-membered heteroarylene group containing deuterium, and a substituted or unsubstituted 3- to 30-membered heteroarylene group containing deuterium.

[0250] Hydrogen (H) atoms are common elements in materials used in OLED light-emitting devices. Deuterium is an isotope of hydrogen, and carbon-deuterium bonds have shorter bond lengths, higher bond energies, and lower vibrational energies than carbon-hydrogen bonds. Therefore, when deuterium atoms replace hydrogen atoms in material molecules, since the atomic weight of deuterium is twice that of hydrogen, the physical properties of the deuterated material may change, and the physical and chemical properties of the material can be adjusted. When deuterium (D) is introduced into materials for OLED light-emitting devices, the molecular vibration of the material can be suppressed, the spectrum can be narrowed (for example, the spectrum of the guest material), the bond length can be reduced, the bond energy can be increased, and the molecular stability can be improved, which in turn helps to extend the service life of the OLED light-emitting device.

[0251] At least one of A1, A2 and A3 contains deuterium, and / or R A , R B , R C , R D and R E When at least one of the L in the light emitting layer contains deuterium, firstly, the chemical properties of the light emitting layer material can be kept almost unchanged; secondly, the vibration energy level of the light emitting layer material can be reduced, and the van der Waals force or vibration between molecules of the light emitting layer material can be weakened, thereby preventing the reduction of quantum efficiency caused by collision. Thirdly, the carbon-deuterium bond (CD bond) in the light emitting layer material can improve the stability of the light emitting layer material, so that the efficiency and life of the light emitting device can be improved. Fourthly, the energy required for the light emitting layer material to undergo side reactions can be increased, thereby reducing the probability of side reactions in the light emitting layer material, and improving the stability of the light emitting layer material.

[0252] Moreover, when the light-emitting device is working, the position of exciton recombination mainly occurs on the main material, and the intermediate product generated when the exciton recombination has a higher energy. In addition, in some cases, more triplet excitons generated on the light-emitting layer material will undergo TTA (triplet-triplet-annihilation) annihilation, and high-energy intermediates will also be generated. In the case where the T1 electron cloud of the light-emitting layer material is distributed on the first fused ring, the high-energy intermediates are more distributed on the first fused ring. These high-energy intermediates may cause the decomposition of the light-emitting layer material, thereby affecting the life of the light-emitting material. Moreover, the weakest energy position in the main material is the CH bond. Therefore, among A1, A2 and A3, at least one contains deuterium, and / or R A , R B , R C , R D and R EWhen at least one of the L in contains deuterium, deuterium can be introduced into the light-emitting layer material to form a DH bond with a short bond length and high bond energy, which can increase the molecular bond energy of the first condensed ring and L, increase the electrical stability of the first condensed ring and L, and further increase the tolerance of the light-emitting layer material to high-energy intermediates, thereby improving the electrical stability of the light-emitting layer material, avoiding the degradation of the light-emitting layer material, and improving the efficiency and life of the light-emitting device.

[0253] Here, at least one of A1, A2 and A3 contains deuterium, and / or R A , R B , R C , R D and R E For examples of structures in which at least one of the Ls contains deuterium, please refer to the description in the subsequent sections and will not be repeated here.

[0254] In some embodiments, the general formula (I) includes R A , R B , R C , R D and R E L in the formula (I) is selected from a direct bond and any one of the following structures (IC-1) to (IC-8).

[0255]

[0256] Among them, the values ​​of z1, z2 and z3 are the same or different, and are independently selected from any one of 0, 1, 2, 3, 4, 5 and 6.

[0257] The value of z4 is selected from any one of 0, 1, 2, 3, 4, 5, 6 and 7; the value of z5 is selected from any one of 0, 1, 2, 3, 4 and 5; the value of z4 and z5 is less than or equal to 10.

[0258] The values ​​of z6 and z7 are the same or different, and are independently selected from any one of 0, 1, 2, 3, 4 and 5; the value of z6 and z7 is less than or equal to 8.

[0259] The value of z8 is selected from any one of 0, 1, 2, 3 and 4.

[0260] The values ​​of z9 and z10 are the same or different, and are independently selected from any one of 0, 1, 2, 3, 4, 5, 6, 7 and 8.

[0261] Here, for understanding the position of the deuterium (D) atom in structures (IC-1) to (IC-8), please refer to the above section on (R1) a The description of the positional relationship between (D) and the six-membered ring connected thereto is not repeated here. For example, in structure (IC-1), (D)z1 It can be connected to any z1 carbon atoms on the two six-membered rings on both sides.

[0262] In the general formula (I), R A , R B , R C , R D and R E When L is selected from a direct bond and any one of structures (IC-1) to (IC-8), the structure of L is relatively simple, which can simplify the molecular structure of the light-emitting layer material, reduce the difficulty of synthesizing the light-emitting layer material, and increase the availability of the light-emitting layer material.

[0263] Furthermore, in the general formula (I), R A , R B , R C , R D and R E When L in contains deuterium, as described above, the stability of the light-emitting layer material (for example, including electrical stability) can be improved while keeping the chemical properties of the light-emitting layer material almost unchanged, thereby improving the efficiency and life of the light-emitting device.

[0264] In some examples, the general formula (I) includes R A , R B , R C , R D and R E When L is selected from any one of the following structures (IC-1) to (IC-8), the structure of L may be as shown in the following formula. In the following structural formula, one of the two * represents the connection site between L and Ar, and the other represents the connection site between L and the first condensed ring.

[0265]

[0266] In some examples, the general formula (I) includes R A , R B , R C , R D and R E L in the formula is selected from any one of the following structures (IC-1) to (IC-8), and contains deuterium. In this case, the structure of L can be as shown in the following formula. Among them, one of the two * in the following structural formula represents the connection site between L and Ar, and the other represents the connection site between L and the first condensed ring.

[0267]

[0268]

[0269] In some embodiments, A1 and A3 are the same or different and are independently selected from any one of the following structures (ID-1) to (ID-6).

[0270]

[0271] Wherein, * indicates the fusion site.

[0272] R 11 ~R 16 The same or different are independently selected from any one of hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1~C12 alkyl, substituted or unsubstituted C1~C12 haloalkyl, substituted or unsubstituted C1~C12 alkoxy, substituted or unsubstituted C3~C10 cycloalkyl, substituted or unsubstituted C6~C60 aryl and substituted and unsubstituted C3~C60 heteroaryl.

[0273] The value of k is selected from any one of 0, 1, 2, 3 and 4.

[0274] The values ​​of m, p and q are the same or different and are independently selected from any one of 0, 1, 2, 3, 4, 5 and 6.

[0275] The value of n is selected from any one of 0, 1, 2, 3, 4, 5, 6, 7 and 8.

[0276] The value of r is selected from any one of 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10.

[0277] Here, for understanding the position of Rx (x is any one of 11 to 16 and is a positive integer) in structures (ID-1) to (ID-6), please refer to the above description of (R1) a The description of the positional relationship between the six-membered ring connected thereto is not repeated here. For example, in structure (ID-6), (R 16 ) r It can be connected to any r carbon atoms on the three benzene rings arranged in a triangle.

[0278] It can be understood that when A1 or A3 is selected from any one of the following structures (ID-1) to (ID-6), the structure of A1 or A3 is relatively simple, which can simplify the molecular structure of the light-emitting layer material, reduce the difficulty of synthesizing the light-emitting layer material, and increase the availability of the light-emitting layer material.

[0279] In some embodiments, A2 is selected from any one of the following structures (IE-1) to (IE-3).

[0280]

[0281] Wherein, * indicates the fusion site.

[0282] R 17 ~R 19 The same or different are independently selected from any one of hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1~C12 alkyl, substituted or unsubstituted C1~C12 haloalkyl, substituted or unsubstituted C1~C12 alkoxy, substituted or unsubstituted C3~C10 cycloalkyl, substituted or unsubstituted C6~C60 aryl and substituted and unsubstituted C3~C60 heteroaryl.

[0283] The values ​​of s and t are the same or different and are independently selected from any one of 0, 1 and 2.

[0284] The value of u is selected from any one of 0, 1, 2, 3 and 4.

[0285] Here, for understanding the position of Rx (x is any one of 17 to 19 and is a positive integer) in structures (IE-1) to (IE-3), please refer to the above description of (R1) a The description of the positional relationship between the six-membered ring and the six-membered ring connected thereto is not repeated here. For example, in structure (IE-3), (R 19 ) u It can be attached to any carbon on the naphthalene ring.

[0286] It can be understood that when A2 is selected from any one of the following structures (IE-1) to (IE-3), the structure of A2 is relatively simple, which can simplify the molecular structure of the light-emitting layer material, reduce the difficulty of synthesizing the light-emitting layer material, and increase the availability of the light-emitting layer material.

[0287] For example, R 11 ~R 19any one of which may be selected from hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1-C3 alkyl, substituted or unsubstituted C1-C6 alkyl, substituted or unsubstituted C1-C9 alkyl, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C1-C3 haloalkyl, substituted or unsubstituted C1-C6 haloalkyl, substituted or unsubstituted C1-C9 haloalkyl, substituted or unsubstituted C1-C12 haloalkyl, substituted or unsubstituted C1-C3 alkoxy, substituted or unsubstituted C1-C6 alkoxy, substituted or unsubstituted C1-C9 alkoxy, substituted or unsubstituted C1-C1 2. Any one of alkoxy, substituted or unsubstituted C3-C6 cycloalkyl, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C6-C10 aryl, substituted or unsubstituted C6-C14 aryl, substituted or unsubstituted C6-C22 aryl, substituted or unsubstituted C6-C30 aryl, substituted or unsubstituted C6-C60 aryl, substituted or unsubstituted C3-C10 heteroaryl, substituted or unsubstituted C3-C14 heteroaryl, substituted or unsubstituted C3-C22 heteroaryl, substituted or unsubstituted C3-C30 heteroaryl and substituted or unsubstituted C3-C60 heteroaryl.

[0288] It should be noted that in R 11 ~R 19 When any one of the groups is a substituted group, the type and number of the substituents are not limited here. 11 ~R 19 The types of optional substituent groups can be referred to the above examples, which will not be repeated here. 11 ~R 19 Any of them can be selected as a substituted C1-C3 alkyl group.

[0289] For example, in R 11 ~R 19 When any one of the groups is a substituted group, the number of the substituted groups may be 1, 2, 3, 4 or 5.

[0290] For example, in R 11 ~R 19When any one of the following is a substituted group, the substituted group may be any one of the following groups: deuterium, (C1-C5) alkyl, (C1-C10) alkyl, (C1-C20) alkyl, (C1-C30) alkyl, halo (C1-C5) alkyl, halo (C1-C10) alkyl, halo (C1-C20) alkyl, halo (C1-C30) alkyl, halogen, cyano, (C3-C7) cycloalkyl, (C3-C12) cycloalkyl, (C3-C20) cycloalkyl, (C3-C30) cycloalkyl, 5-membered to 7-membered heterocycloalkyl, (C2-C6) alkenyl, (C2-C10) alkenyl, (C2-C20) alkenyl, (C2-C30) alkenyl, (C2-C6) alkynyl, (C 2-C10)alkynyl, (C2-C20)alkynyl, (C2-C30)alkynyl, (C6-C10)aryl, (C6-C14)aryl, (C6-C18)aryl, (C6-C22)aryl, (C6-C30)aryl, (C1-C6)alkoxy, (C1-C10)alkoxy, (C1-C20)alkoxy, (C1-C30)alkoxy, (C6-C10)aryloxy, (C6-C14)aryloxy, (C6-C18)aryloxy, (C6-C30)aryloxy, (C2-C6)heteroaryl, (C2-C10)heteroaryl, (C2-C20)heteroaryl, (C2-C30)heteroaryl, (C6-C10)aryl substituted (C2-C6) heteroaryl, (C6-C14) aryl-substituted (C2-C10) heteroaryl, (C6-C18) aryl-substituted (C2-C20) heteroaryl, (C6-C30) aryl-substituted (C2-C30) heteroaryl, (C6-C10) aryl-substituted (C1-C6) alkyl, (C6-C14) aryl-substituted (C1-C10) alkyl, (C6-C18) aryl-substituted (C1-C20) alkyl, (C6-C30) aryl-substituted (C1-C30) alkyl, (C1-C6) alkyl-substituted (C6-C10) aryl, (C1-C10) alkyl-substituted (C6-C14) aryl, (C1-C20) alkyl-substituted (C6-C18) aryl, (C1-C10) alkyl-substituted (C6-C14) aryl, (C1-C20) alkyl-substituted (C6-C18) aryl, (C1-C10) alkyl-substituted (C6-C14) aryl -C30) alkyl-substituted (C6-C30) aryl, (C6-C10) arylthio, (C6-C14) arylthio, (C6-C18) arylthio, (C6-C30) arylthio, mono(C1-C6) alkylamino, mono(C1-C10) alkylamino, mono(C1-C20) alkylamino, mono(C1-C30) alkylamino, di(C1-C6) alkylamino, di(C1-C10) alkylamino, di(C1-C20) alkylamino, di(C1-C30) alkylamino, mono(C6-C10) arylamino, mono(C6-C14) arylamino, mono(C6-C18) arylamino, mono(C6-C30) arylamino, di(C6-C10) arylamino,di(C6-C14)arylamino, di(C6-C18)arylamino, di(C6-C30)arylamino, (C1-C6)alkyl-substituted (C6-C10)arylamino, (C1-C10)alkyl-substituted (C6-C14)arylamino, (C1-C20)alkyl-substituted (C6-C18)arylamino, (C1-C30)alkyl (C6-C30)arylamino, di(C6-C10)arylboryl, di(C6-C14)arylboryl, di(C6-C1 8) arylboryl, di(C6-C30)arylboryl, di(C1-C10)alkylboryl, di(C1-C14)alkylboryl, di(C1-C18)alkylboryl, di(C1-C30)alkylboryl, (C1-C6)alkyl-substituted (C6-C10)arylboryl, (C1-C10)alkyl-substituted (C6-C14)arylboryl, (C1-C20)alkyl-substituted (C6-C18)arylboryl, (C1-C30)alkyl (C6-C30)arylboryl, tri(C1-C20)alkyl-substituted (C6-C18)arylboryl, tri(C1-C30)alkyl (C6-C30)arylboryl, tri(C1-C30)alkyl (C1-C6) alkylsilyl, tri(C1-C10) alkylsilyl, tri(C1-C20) alkylsilyl, tri(C1-C30) alkylsilyl, di(C1-C6) alkyl(C6-C10) arylsilyl, di(C1-C10) alkyl(C6-C14) arylsilyl, di(C1-C20) alkyl(C6-C18) arylsilyl, di(C1-C30) alkyl(C6-C30) arylsilyl, (C1-C6) alkyl-substituted di(C1-C10) alkyl(C6-C14) arylsilyl (C6-C10) arylsilyl, (C1-C10) alkyl-substituted di(C6-C14) arylsilyl, (C1-C20) alkyl-substituted di(C6-C18) arylsilyl, (C1-C30) alkyldi(C6-C30) arylsilyl, tri(C6-C10) arylsilyl, tri(C6-C14) arylsilyl, tri(C6-C18) arylsilyl, tri(C6-C30) arylsilyl, N-carbazolyl, carboxyl, nitro and hydroxyl.

[0291] In some examples, A1 and A3 are selected from any one of structures (ID-1) to (ID-6), and A2 is selected from one of structures (IE-1) to (IE-3); in this case, the structure of the first fused ring can be as shown below. In the following structural formula, * represents R included in the general formula (I): A The site of attachment to the first fused ring.

[0292]

[0293]

[0294]

[0295]

[0296]

[0297]

[0298] In some examples, A1 and A3 are selected from any one of structures (ID-1) to (ID-6), A2 is selected from one of structures (IE-1) to (IE-3), and at least one of A1, A2 and A3 contains deuterium. In this case, the structure of the first fused ring can be as shown below. In the following structural formula, * represents R included in the general formula (I) A The site of attachment to the first fused ring.

[0299]

[0300]

[0301]

[0302]

[0303]

[0304]

[0305]

[0306]

[0307]

[0308]

[0309]

[0310] In some embodiments, the light-emitting layer material is selected from any one of the following structures (I-1) to (I-38).

[0311]

[0312]

[0313]

[0314]

[0315]

[0316]

[0317] Among them, R 11 ~R 19 The same or different are independently selected from any one of hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1~C12 alkyl, substituted or unsubstituted C1~C12 haloalkyl, substituted or unsubstituted C1~C12 alkoxy, substituted or unsubstituted C3~C10 cycloalkyl, substituted or unsubstituted C6~C60 aryl and substituted and unsubstituted C3~C60 heteroaryl.

[0318] L1 and L2 are the same or different and are independently selected from any one of a direct bond, a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, a substituted or unsubstituted heterocycloalkylene group, a substituted or unsubstituted alkenylene group, a substituted or unsubstituted alkynylene group, a substituted or unsubstituted arylene group and a substituted or unsubstituted heteroarylene group.

[0319] Ar1 and Ar2 are the same or different and are independently selected from any one of substituted or unsubstituted C6~C30 aryl, substituted or unsubstituted 3- to 30-membered heteroaryl, amino, substituted or unsubstituted mono-C1~C30 alkylamino, substituted or unsubstituted di-C1~C30 alkylamino, substituted or unsubstituted mono-C6~C30 arylamino, substituted or unsubstituted di-C6~C30 arylamino and substituted or unsubstituted C1~C30 alkyl C6~C30 arylamino.

[0320] N is nitrogen. M and E are the same or different and are independently selected from direct bonds, O, S, NR A and CR B R C Any one of, and M and E are not direct bonds at the same time. A For R A Substituted nitrogen; CR B R C For R B and R C Substituted carbon.

[0321] The value of k is selected from any one of 0, 1, 2, 3 and 4.

[0322] The values ​​of m, p and q are the same or different and are independently selected from any one of 0, 1, 2, 3, 4, 5 and 6.

[0323] The value of n is selected from any one of 0, 1, 2, 3, 4, 5, 6, 7 and 8.

[0324] The value of r is selected from any one of 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10.

[0325] The values ​​of s and t are the same or different and are independently selected from any one of 0, 1 and 2.

[0326] The value of u is selected from any one of 0, 1, 2, 3 and 4.

[0327] It should be understood that L1 and L2 are the above-mentioned L set at different positions, and Ar1 and Ar2 are the above-mentioned Ar set at different positions. Therefore, for the understanding of L1 and L2, as well as Ar1 and Ar2, please refer to the description of L and Ar in the previous part, which will not be repeated here.

[0328] It can be understood that when the light-emitting layer material is selected from any one of the following structures (I-1) to (I-38), A1 or A3 is selected from any one of the following structures (ID-1) to (ID-6), and A2 is selected from any one of the following structures (IE-1) to (IE-3). In this way, as described above, the molecular structure of the light-emitting layer material can be simplified, the difficulty of synthesizing the light-emitting layer material can be reduced, and the availability of the light-emitting layer material can be increased.

[0329] In some examples, the light-emitting layer material is one of the structures shown in structure (I-2). In this case, the structure of the light-emitting layer material can be shown as follows.

[0330]

[0331]

[0332]

[0333] In some examples, the light-emitting layer material is one of the structures shown in structure (I-5). In this case, the structure of the light-emitting layer material can be shown as follows.

[0334]

[0335]

[0336]

[0337]

[0338]

[0339]

[0340]

[0341]

[0342]

[0343]

[0344]

[0345]

[0346]

[0347] In some examples, the light-emitting layer material is one of the structures shown in structure (I-6). In this case, the structure of the light-emitting layer material can be shown as follows.

[0348]

[0349]

[0350]

[0351]

[0352]

[0353] In some examples, the light-emitting layer material is one of the structures shown in structure (I-7). In this case, the structure of the light-emitting layer material can be shown as follows.

[0354]

[0355]

[0356]

[0357]

[0358]

[0359]

[0360]

[0361]

[0362] In some examples, the light-emitting layer material is one of the structures shown in structure (I-9). In this case, the structure of the light-emitting layer material can be shown as follows.

[0363]

[0364]

[0365] In some examples, the light-emitting layer material is one of the structures shown in structure (I-10). In this case, the structure of the light-emitting layer material can be shown as follows.

[0366]

[0367]

[0368]

[0369]

[0370]

[0371]

[0372]

[0373]

[0374]

[0375]

[0376] In some examples, the light-emitting layer material is one of the structures shown in structure (I-14). In this case, the structure of the light-emitting layer material can be shown as follows.

[0377]

[0378] In some examples, the light-emitting layer material is one of the structures shown in structure (I-16). In this case, the structure of the light-emitting layer material can be shown as follows.

[0379]

[0380]

[0381] In some examples, the light-emitting layer material is one of the structures shown in structure (I-21). In this case, the structure of the light-emitting layer material can be shown as follows.

[0382]

[0383] In some examples, the light-emitting layer material is one of the structures shown in structure (I-27). In this case, the structure of the light-emitting layer material can be shown as follows.

[0384]

[0385]

[0386]

[0387]

[0388]

[0389]

[0390]

[0391]

[0392]

[0393]

[0394]

[0395] In some examples, the light-emitting layer material is one of the structures shown in structure (I-28). In this case, the structure of the light-emitting layer material can be shown as follows.

[0396]

[0397] In some examples, the light-emitting layer material is one of the structures shown in structure (I-29). In this case, the structure of the light-emitting layer material can be shown as follows.

[0398]

[0399]

[0400]

[0401]

[0402]

[0403]

[0404] In some examples, the light-emitting layer material is one of the structures shown in structure (I-37). In this case, the structure of the light-emitting layer material can be shown as follows.

[0405]

[0406]

[0407]

[0408]

[0409]

[0410]

[0411]

[0412]

[0413]

[0414]

[0415] In some examples, the light-emitting layer material is one of the structures shown in structure (I-38). In this case, the structure of the light-emitting layer material can be shown as follows.

[0416]

[0417]

[0418]

[0419]

[0420]

[0421]

[0422]

[0423]

[0424]

[0425]

[0426]

[0427] The following uses the light-emitting layer materials shown in the structures of formula (I-2), (I-8), (I-14) and (I-28) as examples to introduce the synthesis process of the light-emitting layer materials shown in the general formula (I). It should be understood that the synthesis of the compounds shown in the following reaction formula can be carried out using methods in the relevant technology. For example, cross-coupling reactions of transition metals such as nickel and palladium, CC and CN coupling reactions of transition metals such as magnesium or zinc, Suzuki reactions, Miyaura reactions or Buchwald reactions, etc. Moreover, in the case where the synthesis process of the light-emitting layer material includes Suzuki reactions, Miyaura reactions or Buchwald reactions, the synthesis process of the light-emitting layer material has the advantages of mild reaction conditions and excellent selectivity of various functional groups.

[0428] The synthesis process of other light-emitting layer materials except the light-emitting layer materials with structures shown in formulas (I-2), (I-8), (I-14) and (I-28) can be synthesized by controlling the reaction conditions (for example: reaction raw materials, solvents, feed ratios, reaction temperature, etc.), which will not be listed here in detail.

[0429] In some embodiments, the synthesis reaction of the light-emitting layer material having a structure as shown in formula (I-2) is as shown below.

[0430]

[0431] In some other embodiments, the synthesis reaction of the light-emitting layer material having a structure as shown in formula (I-2) is as shown below.

[0432]

[0433] In some embodiments, the synthesis reaction of the light-emitting layer material having a structure as shown in formula (I-8) is as shown below.

[0434]

[0435] In some embodiments, the synthesis reaction of the light-emitting layer material having a structure as shown in formula (I-14) is as shown below.

[0436]

[0437] In some embodiments, the synthesis reaction of the light-emitting layer material having a structure as shown in formula (I-28) is as shown below.

[0438]

[0439]

[0440] Below, taking the light-emitting layer materials with structures shown in formulas (H-1), (H-2), (H-3), (H-4) and (H-5) as examples, the synthesis process of the light-emitting layer materials with structures shown in general formula (I-2), general formula (I-14) and general formula (I-28) is introduced.

[0441] In some embodiments, the synthesis reaction of the light-emitting layer material having a structure as shown in formula (H-1) is as shown below.

[0442]

[0443] Exemplarily, the process of synthesizing the light-emitting layer material of structure (H-1) by the compounds of structures (1-1) and (1-1a) can be as follows: the compound (50 mmol) of structure (1-1), the compound (50 mmol) of structure (1-1a), Pd2(dba)3 (0.15 mmol), P(t-Bu)3 (0.15 mmol), NaOt-Bu (250 mmol) and toluene (210 mL) are added to a three-necked flask and reacted at 110° C. for 6 hours. After the reaction is completed, the temperature of the reactants is cooled to room temperature, and the reaction solvent is removed. Then, the concentrated reactants are separated using a silica gel column or a recrystallization method to obtain the light-emitting layer material of structure (H-1), and the yield is 85.2%.

[0444] In some embodiments, the synthesis reaction of the light-emitting layer material having a structure as shown in formula (H-2) is as shown below.

[0445]

[0446] For example, the process of synthesizing the intermediate shown in formula (1-2b) from the compounds shown in structures (1-2) and (1-2a) can be as follows: the compound shown in structure (1-2) (26 mmol), the compound shown in structure (1-2a) (26 mmol), Pd2(dba)3 (0.8 mmol), P(t-Bu)3 (1.6 mmol), NaOt-Bu (80 mmol) are added to a three-necked flask containing toluene (250 mL), refluxed at 110° C. and stirred for 6 hours. After the reaction is completed, the reaction solvent is removed, and the intermediate shown in structure (1-2b) is separated and concentrated using a silica gel column or a recrystallization method to obtain a yield of 74.8%.

[0447] Illustratively, the process of synthesizing the intermediate shown in formula (1-2c) from the intermediate shown in formula (1-2b) can be: Pd(OAc)2(30mmol), P(t-Bu)3(60mmol), K2CO3(290mol), DMA(190ml) are added to a three-necked flask containing the intermediate (40g, 50mmol) shown in formula (1-2b), and stirred at 170°C for 12 hours. After the reaction is completed, the reaction solvent is removed and placed in ice water. Then, the precipitated solid is separated using a silica gel column or a recrystallization method to obtain the intermediate shown in formula (1-2c), with a yield of 78.4%.

[0448] Here, for understanding the process of synthesizing the light-emitting layer material with a structure such as shown in formula (H-2) from compounds with structures such as (1-2c) and (1-1a) (yield is 83.5%), please refer to the description of the process of synthesizing the light-emitting layer material with a structure such as shown in formula (H-1) from compounds with structures such as (1-1) and (1-1a) in the aforementioned section, which will not be repeated here.

[0449] In some embodiments, the synthesis reaction of the light-emitting layer material having a structure as shown in formula (H-3) is as shown below.

[0450]

[0451] Here, for understanding the process of synthesizing the light-emitting layer material with a structure as shown in formula (H-3) through the above reaction (yield is 80.8%), please refer to the description of the process of the light-emitting layer material with a structure as shown in formula (H-2) in the previous section, which will not be repeated here.

[0452] In some embodiments, the synthesis reaction of the light-emitting layer material having a structure as shown in formula (H-4) is as shown below.

[0453]

[0454] Here, for understanding the process of synthesizing the light-emitting layer material with a structure as shown in formula (H-4) through the above reaction (yield is 83.2%), please refer to the description of the process of the light-emitting layer material with a structure as shown in formula (H-2) in the previous section, which will not be repeated here.

[0455] In some embodiments, the synthesis reaction of the light-emitting layer material having a structure as shown in formula (H-5) is as shown below.

[0456]

[0457] Illustratively, the process of synthesizing the intermediate shown in formula (1-5c) by the compounds shown in structures (1-5a) and (1-5b) can be: the compound (87.4mmol) shown in structure (1-5a), the compound (195.8mmol) shown in structure (1-5b), PdCl2(PPh3)2(8.9mmol), KOAc (384.6mmol) and 500 tetrahydrofuran (THF) (500mL) are added to a flask, and the mixture is refluxed and stirred for 5 hours. After the reaction is completed, the organic layer is extracted with ethyl acetate, and magnesium sulfate is used to remove residual moisture. The obtained solid is dried and separated by column chromatography to obtain the intermediate shown in formula (1-5c), and the yield is 94%.

[0458] For example, the process of synthesizing the intermediate shown in formula (1-5e) from the compounds shown in structures (1-5c) and (1-5d) can be as follows: the compound shown in structure (1-5c) (157.8 mmol), the compound shown in structure (1-5d) (473.4 mmol), Pd(PPh3) 4( 15.7mmol), 240mL of Na2CO3 (480mmol), 240mL of ethanol (EtOH) and 500mL of toluene were added to a flask and refluxed at 120°C for 5 hours. After the reaction was completed, the organic layer was extracted with ethyl acetate (EA), and magnesium sulfate was used to remove residual moisture. The obtained solid was dried and separated by column chromatography to obtain an intermediate with a structure as shown in formula (1-5e), with a yield of 85%.

[0459] Illustratively, the process of synthesizing the intermediate shown in formula (1-5f) from the compound shown in formula (1-5e) can be as follows: Compound 1-5e The compound shown in formula (1-5e) (116.1 mmol), PPh3 (232.2 mmol), and 600 mL of dichlorobenzene (DCB) were added to a flask, and the mixture was refluxed and stirred at 150° C. for 5 hours. After the reaction was completed, the mixture was distilled and ground with MeOH to obtain the intermediate shown in formula (1-5f) with a yield of 60%.

[0460] Here, for understanding the process of synthesizing the light-emitting layer material of the structure shown in formula (H-5) through the intermediates shown in structures (1-5h) and (1-1a) (yield of 85%), please refer to the description of the synthesis process of the light-emitting layer material of the structure shown in formula (H-1) in the previous section, which will not be repeated here. Among them, the yield of synthesizing the intermediate of the structure shown in formula (1-5i) through the intermediate of the structure shown in (1-5f) is 56%; the yield of synthesizing the light-emitting layer material of the structure shown in formula (H5) through the intermediate of the structure shown in (1-5i) is 87%.

[0461] In some embodiments, light-emitting layer materials with structures such as (H-6) to (H-10) and (H-26) to (H-30) were also synthesized. The intermediate structures and yields in the synthesis methods of these light-emitting layer materials are shown in Table 1 below.

[0462] Table 1

[0463]

[0464]

[0465]

[0466] In some embodiments, light-emitting layer materials with structures such as (H-11) to (H-25) and (H-31) to (H-35) were also synthesized. The intermediate structures and yields in the synthesis methods of these light-emitting layer materials are shown in Tables 2 and 3 below.

[0467] Table 2

[0468]

[0469]

[0470]

[0471]

[0472] Table 3

[0473]

[0474]

[0475]

[0476]

[0477]

[0478] The above is an exemplary description of the structure and synthesis method shown in the general formula (I). The following is an exemplary description of the energy level and other related properties of the light-emitting layer material.

[0479] In some embodiments, the reorganization energy of the light emitting layer material ranges from 0.1 eV to 0.3 eV.

[0480] For example, the reorganization energy of the light-emitting layer material may be 0.1 eV, 0.12 eV, 0.14 eV, 0.16 eV, 0.18 eV, 0.20 eV, 0.25 eV or 0.3 eV, etc.

[0481] For example, the reorganization energy of the light-emitting layer material described herein may be the reorganization energy of the light-emitting layer material obtained by simulation and calculation using Gaussian software and density functional method.

[0482] Through the above arrangement, the reorganization energy of the light-emitting layer material is low, so that the molecules of the light-emitting layer material are not easily deformed under the action of an external electric field, which can improve the stability of the light-emitting layer material. Moreover, the reorganization energy is also related to the mobility to a certain extent. When the reorganization energy of the light-emitting layer material is in the range of 0.1eV to 0.2eV, the mobility (such as hole mobility) of the light-emitting layer material is high, which can make the exciton recombination rate in the light-emitting layer higher, improve the efficiency of the light-emitting device, and reduce the driving voltage of the light-emitting device.

[0483] In some embodiments, the hole mobility of the light-emitting layer material is in the range of 1×10 -5 m / V·s~1×10 -4 m / V·s.

[0484] For example, the hole mobility of the light-emitting layer material may be 1×10 -5 m / V·s, 3×10 -5 m / V·s, 5×10 -5 m / V·s, 8×10 -5 m / V·s or 1×10 -4 m / V·s, etc.

[0485] In the case where the light-emitting layer material is used as the first main material, the charge transfer characteristics of the light-emitting layer material can determine the position of the exciton recombination area in the light-emitting layer to a certain extent, and the position of the exciton recombination area can affect the life and efficiency of the device. When the exciton recombination area is far away from the center of the light-emitting layer and close to an adjacent layer, the material of this layer may be degraded due to the influence of electrons or holes, thereby reducing the life of the light-emitting device. Therefore, through the above-mentioned setting, the hole mobility of the light-emitting layer material is relatively high. First, the exciton recombination rate in the light-emitting layer can be made higher, which can improve the efficiency of the light-emitting device and reduce the driving voltage of the light-emitting device. Second, it can be more matched with the electron migration ability of the second main material, improve the utilization rate of the excitons, and make the position of the exciton recombination area in the light-emitting layer close to the center of the light-emitting layer, prevent the degradation of the adjacent layer materials, and help to increase the life of the light-emitting device.

[0486] In some embodiments, the absolute value of the highest occupied molecular orbital (HOMO) energy level of the light emitting layer material ranges from 4.80 eV to 5.20 eV.

[0487] For example, the absolute value of the highest occupied molecular orbital energy level of the light-emitting layer material may be 4.80 eV, 4.85 eV, 4.90 eV, 4.94 V, 5.00 V, 5.05 V, 5.10 V, 5.15 V or 5.20 eV, etc.

[0488] Illustratively, the highest occupied molecular orbital energy level of the light-emitting layer material described herein may be the highest occupied molecular orbital energy level of the light-emitting layer material obtained by simulation and calculation using Gaussian software and density functional method.

[0489] In the materials of the light-emitting layer, the host material and the guest material need to have a good energy level match. For example, the energy gap of the host material needs to be larger than that of the guest material so that the exciton energy can be effectively transferred to the guest material molecules to emit phosphorescence, or the charge can be directly trapped in the guest material to form exciton radiation attenuation to emit phosphorescence.

[0490] Through the above arrangement, the highest occupied molecular orbital energy level of the light-emitting layer material is relatively shallow, which is beneficial to the injection of holes. Secondly, it can make the energy gap of the light-emitting layer material larger than the energy gap of the guest material, so that the exciton energy can be effectively transferred to the guest material (for example, the guest material emitting red light) molecules, so that the highest occupied molecular orbital energy level of the light-emitting layer material matches the performance requirements of the light-emitting device (for example: the third light-emitting device for emitting red light).

[0491] In some embodiments, the absolute value of the lowest unoccupied molecular orbital (LUMO) energy level of the light emitting layer material ranges from 1.20 eV to 1.40 eV.

[0492] For example, the absolute value of the lowest unoccupied molecular orbital energy level of the light-emitting layer material may be 1.20 eV, 1.25 eV, 1.30 eV, 1.33 eV, 1.37 eV or 1.30 eV, etc.

[0493] Illustratively, the lowest unoccupied molecular orbital energy level of the light-emitting layer material described herein may be the highest occupied molecular orbital energy level of the light-emitting layer material obtained by simulation and calculation using Gaussian software and density functional method.

[0494] Through the above configuration, the lowest unoccupied molecular orbital energy level of the light-emitting layer material is within a suitable range, so that the lowest unoccupied molecular orbital energy level of the light-emitting layer material matches the performance requirements of the light-emitting device (eg, the third light-emitting device for emitting red light).

[0495] In some embodiments, the absolute value of the triplet state (T1) energy level of the light emitting layer material ranges from 2.20 eV to 2.60 eV.

[0496] For example, the absolute value of the triplet energy level of the light-emitting layer material may be 2.20 eV, 2.25 eV, 2.30 eV, 2.34 eV, 2.38 eV, 2.41 eV, 2.44 eV, 2.47 eV, 2.50 eV, 2.58 eV or 2.60 eV, etc.

[0497] Illustratively, the triplet energy level of the light-emitting layer material described herein may be the highest occupied molecular orbital energy level of the light-emitting layer material obtained by simulation and calculation using Gaussian software and density functional method.

[0498] In some examples, when phosphorescent materials or thermally activated delayed fluorescent (TADF) materials are used as guest materials, the T1 energy level of the host material needs to be higher than the T1 energy level of the guest material. This is because phosphorescent guests utilize T1 state excitons to emit light, and TADF guests can utilize T1 state excitons through reverse intersystem crossing.

[0499] Through the above arrangement, the triplet energy level of the light-emitting layer material is within a suitable range. First, the triplet energy level of the light-emitting layer material can be higher than the triplet energy level of the guest material (for example, the guest material emitting red light) (it can also be understood as: the phosphorescence peak wavelength of the light-emitting layer material is less than the phosphorescence peak wavelength of the guest material), so that the excitons of the host material can be transferred to the guest material through energy to achieve luminescence, and the utilization rate of the excitons can be improved; second, when the material of the light-emitting layer also includes a second host material (for example, the second host material of the structure RH-N-1 described in detail below), the light-emitting layer material can be well matched with the second host material, an exciton complex can be formed, the utilization rate of triplet excitons can be improved, and the utilization rate of excitons can be improved, and the luminous efficiency of the light-emitting device can be improved. Third, when the T1 energy level of the light-emitting layer material is too large, it will cause a large energy loss and a high driving voltage. Therefore, through the above arrangement, energy loss can be reduced and the driving voltage can be reduced.

[0500] In some embodiments, the material of the light-emitting layer further includes: a guest material. The triplet energy level of the first host material is greater than the triplet energy level of the guest material.

[0501] Here, for the understanding of the object material, please refer to the description of the object material in the previous part, which will not be repeated here.

[0502] It can be understood that when the triplet energy level of the first host material is greater than the triplet energy level of the guest material, the triplet excitons on the first host material, and / or the exciplex formed by the first host material and the second host material, can be transferred to the guest material for light emission. In this way, the efficiency of the light-emitting device can be improved.

[0503] In some embodiments, the wavelength of light emitted by the guest material is in the range of 600 nm to 650 nm.

[0504] For example, the wavelength of the light emitted by the guest material may be 600 nm, 610 nm, 620 nm, 630 nm, 635 nm, 640 nm or 650 nm, etc.

[0505] In the case where the wavelength range of the light emitted by the guest material is 600nm to 650nm, the light-emitting device including the light-emitting layer material is a third light-emitting device, which can be used to emit red light. In this way, the matching of the performance of the light-emitting layer material (for example, triplet energy level) and the performance requirements of the light-emitting device can be improved. For example, better energy transfer can be achieved between the guest material emitting red light, reducing energy loss to improve the efficiency of the light-emitting device. For example, since the distribution of the T1 electron cloud mainly depends on the group with a lower T1 energy level, the T1 energy level of the first condensed ring of the light-emitting layer material is lower, so that the distribution of the T1 electron cloud of the light-emitting layer material is on the first condensed ring. Since red light emission requires a lower band gap, when the T1 electron cloud of the light-emitting layer material is distributed on the first condensed ring, the light-emitting layer material can meet the characteristic of a lower band gap, so that the light-emitting layer material can better match the red light emission and can be used for the third light-emitting device.

[0506] In some embodiments, the material of the light-emitting layer further includes: a second host material. The hole mobility of the second host material is smaller than the hole mobility of the first host material, and the electron mobility of the second host material is larger than the electron mobility of the first host material.

[0507] Through the above arrangement, the light-emitting layer material can be used as a hole-type main material in the light-emitting layer material, and the second main material can be used as an electron-type main material. Moreover, the two can be combined to form an exciton complex, which can improve the utilization rate of triplet excitons, thereby improving the utilization rate of excitons and improving the luminous efficiency of the light-emitting device.

[0508] Here, the structure of the second host material is not limited.

[0509] In some embodiments, the structure of the second host material is the following structure (RH-N-1).

[0510]

[0511] When the structure of the second host material is structure (RH-N-1), the light-emitting layer material has better matching with the second host material of structure (RH-N-1), can form an exciplex, and can further improve the utilization rate of triplet excitons, so that the utilization rate of excitons is improved, and the luminous efficiency of the light-emitting device can be improved. Moreover, when the structure of the second host material is structure (RH-N-1), the second host material needs to have a suitable LUMO energy level to achieve electron injection.

[0512] In some embodiments, the first host material and the second host material form a first exciplex, wherein the maximum emission wavelength of the first exciplex is greater than the maximum emission wavelength of the first host material and greater than the maximum emission wavelength of the second host material.

[0513] It can be understood that, compared with the first host material or the second host material, the energy of the triplet exciton of the first exciplex can be transferred to the singlet exciton of the first exciplex at a higher ratio (e.g., 100%), and the energy of the singlet exciton of the first exciplex can be transferred to the guest material at a higher ratio (e.g., 100%), so that the light-emitting layer 131 (see Fig.12 ) has a high energy transfer efficiency between the materials, which can improve energy utilization and enhance the efficiency of the light-emitting device 100.

[0514] In some embodiments, the maximum emission wavelength of the first host material is less than the maximum emission wavelength of the second host material, and the difference between the maximum emission wavelength of the first exciplex and the maximum emission wavelength of the second host material is greater than or equal to 20 nm.

[0515] For example, the difference between the maximum emission wavelength of the first exciplex and the maximum emission wavelength of the second host material may be 20 nm, 30 nm, 40 nm, 50 nm, 60 nm or 70 nm, etc.

[0516] Through the above arrangement, the maximum emission wavelength of the first excited complex has a large difference with the maximum emission wavelength of the second host material, and also has a large difference with the maximum emission wavelength of the first host material, which is beneficial to improving the efficiency and life of the light-emitting device.

[0517] In some embodiments, the maximum emission wavelength of the first host material is in the range of 380 nm to 430 nm.

[0518] For example, the maximum emission wavelength of the first host material may be 380 nm, 390 nm, 400 nm, 410 nm, 420 nm or 430 nm, etc.

[0519] In some embodiments, the maximum emission wavelength of the second host material is in the range of 400 nm to 450 nm.

[0520] For example, the maximum emission wavelength of the second host material may be 400 nm, 410 nm, 420 nm, 430 nm, 440 nm or 450 nm, etc.

[0521] In some embodiments, the maximum emission wavelength of the first exciplex is in the range of 480 nm to 550 nm.

[0522] For example, the maximum emission wavelength of the first exciplex may be 480 nm, 490 nm, 500 nm, 510 nm, 520 nm, 530 nm, 540 nm or 550 nm, etc.

[0523] In some embodiments, Fig.12 As shown, the material of the light-emitting layer 131 includes a guest material. There is an overlapping region between the normalized fluorescence emission spectrum of the first exciplex and the normalized absorption spectrum of the guest material, and the integral area of ​​the overlapping region is greater than or equal to 20% of the integral area of ​​the normalized fluorescence emission spectrum of the first exciplex.

[0524] Illustratively, the integrated area of ​​the overlapping region is equal to 20% of the integrated area of ​​the normalized fluorescence emission spectrum of the first exciplex.

[0525] For example, the ratio of the integrated area of ​​the normalized fluorescence emission spectrum of the first exciplex to the integrated area of ​​the overlapping region may be 25%, 30%, 35%, 40%, 45%, 50% or 60%, etc.

[0526] It can be understood that, through the above arrangement, the area of ​​the overlapped region between the normalized fluorescence emission spectrum of the first exciplex and the normalized absorption spectrum of the guest material is relatively large, and the overlapped region may include the normalized absorption spectrum of the guest material. 3 The MLCT peak enables the exciton energy generated by the first exciton complex to be fully transferred to the guest material, thereby improving the luminous efficiency of the light-emitting layer 131 and improving the efficiency of the light-emitting device 100 .

[0527] Hereinafter, the technical solution provided by the present disclosure will be described in detail and exemplarily through the following experimental examples and comparative examples. According to the evaluation purpose of the embodiment, the following experimental examples and comparative examples are divided into a first group of experimental examples, a second group of experimental examples and a third group of experimental examples.

[0528] [First group of test examples]

[0529] In this group of test examples, Gaussian software was used to simulate the T1 hole electron cloud distribution and T1 electron electron cloud distribution of the light-emitting layer materials with structures such as (H-36), (H-11), (H-18), (H-22), (H-21), and (H-30). The results are as follows:

[0530] As shown in Table 4. Among them, the structure of (H-36) is shown in the following formula.

[0531]

[0532] Table 4

[0533]

[0534]

[0535]

[0536] In addition, this group of test examples also simulated the HOMO electron cloud and LUMO electron cloud of the light-emitting layer material with the structure shown in (H-36), and the results are shown below. The left side shows the HOMO electron cloud distribution of the light-emitting layer material, and the right side shows the LUMO electron cloud distribution of the light-emitting layer material.

[0537]

[0538] From the above simulation results, it can be seen that the HOMO electron cloud of the light-emitting layer material is distributed on the first condensed ring, and the LUMO electron cloud is mainly distributed on the group where Ar-L is located. This can make the HOMO electron cloud and the LUMO electron cloud distributed on different groups, effectively realizing separation, which is beneficial to the regulation of the HOMO energy level and the LUMO energy level, and can achieve a better match with the adjacent functional layer (such as an electron blocking layer or a hole blocking layer).

[0539] In the above-mentioned light-emitting layer materials, the T1 electron cloud is distributed on the first condensed ring. This is because the distribution of the T1 electron cloud mainly depends on the group with a lower T1 energy level, and the T1 energy level of the first condensed ring of the light-emitting layer material is lower, so that the distribution of the T1 electron cloud of the light-emitting layer material is on the first condensed ring. In addition, in some embodiments, the first condensed ring (which can also be understood as a condensed N-heterocore structure) has better conjugation, and in some other embodiments, the T1 energy level of the group where Ar-L is located is higher than the T1 energy level of the first condensed ring, which also makes the first condensed ring part have a lower T1 energy level, so that the T1 electron cloud is mainly distributed on the first condensed ring. Through such a setting, the structure of the first condensed ring and Ar-L of the light-emitting layer material can be selected to achieve the purpose of adjusting the energy level of the light-emitting layer material, so that the materials of the adjacent functional layers (such as electron blocking layers or hole blocking layers) have more choices during the screening process.

[0540] Moreover, since red light emission requires a lower band gap, when the distribution T1 electron cloud of the light-emitting layer material is in the first fused ring, the light-emitting layer material can have a lower band gap, so that the light-emitting layer material can better match the red light emission and can be used for the third light-emitting device. In addition, when the light-emitting layer material is used as the first host material of the light-emitting layer of the third light-emitting device, it can be matched with the second host material (N-type material) to form an exciplex, making full use of triplet excitons, which can improve the utilization efficiency of excitons and the luminous efficiency of the light-emitting device.

[0541] [Second group of test examples]

[0542] This group of test examples tested the reorganization energy, hole mobility, HOMO energy level, LUMO energy level and T1 energy level of the light-emitting layer materials with structures (H-1) to (H-35), and the results are shown in Table 5. Among them, the reorganization energy, HOMO energy level, LUMO energy level and T1 energy level were obtained by simulation calculation using Gaussian software and density functional method.

[0543] Table 5

[0544]

[0545]

[0546] From the above simulation results, it can be seen that the light-emitting layer material has a shallow HOMO energy level. This is because the HOMO electron cloud of the light-emitting layer material is distributed on the first fused ring, and the first fused ring is a large planar conjugated fragment, so that the light-emitting layer material has a shallow HOMO energy level, and can be used as the first main material (P-type material) of the third light-emitting device for emitting red light. Moreover, in some embodiments, the LUMO electron cloud is mainly distributed on the group where Ar-L is located, so that the HOMO electron cloud and the LUMO electron cloud can be distributed on different groups, effectively realizing separation, which is beneficial to the regulation of the HOMO energy level and the LUMO energy level, and can achieve a better match with the adjacent functional layer (for example, an electron blocking layer or a hole blocking layer).

[0547] From the above simulation results, it can be seen that the light-emitting layer material has a lower reorganization energy. This is because the first fused ring is a planar rigid structure, which makes the molecular structure of the light-emitting layer material have a relatively stable geometric configuration, making the molecule less likely to deform under the action of an external electric field, which manifests as a lower reorganization energy.

[0548] From the above test results, it can be seen that the light-emitting layer material has a higher electron mobility. This is because the first fused ring makes the light-emitting layer molecule more planar, which can improve the carrier mobility of the light-emitting layer material and the exciton recombination rate, thereby reducing the operating voltage of the device and making the light-emitting layer material have a higher application value.

[0549] From the above simulation results, it can be seen that the light-emitting layer material has a lower T1 energy level. This is because the T1 electron cloud of the light-emitting layer material is mainly distributed on the first fused ring (i.e., the group with lower T1). In this way, the light-emitting layer material can have a lower band gap, so that the light-emitting layer material can better match the red light emission and can be used for the third light-emitting device. In addition, when the light-emitting layer material is used as the first main material of the light-emitting layer of the third light-emitting device, it can be matched with the second main material (N-type material) to form an exciton complex, making full use of triplet excitons, which can improve the utilization efficiency of excitons.

[0550] From the above performance parameters, it can be seen that the reorganization energy, hole mobility, HOMO energy level, LUMO energy level and T1 energy level of the light-emitting layer material in the present disclosure are within a suitable range and have good matching with the guest material of the light-emitting device for emitting red light.

[0551]

The third group of test examples

[0552] The following examples and comparative examples are used to prepare light-emitting devices 100 with different first host materials in the light-emitting layer 131. The structure of the light-emitting device 100 is as follows: Fig.12 shown.

[0553] Exemplarily, the preparation method of the light-emitting device 100 is as follows: a substrate (glass substrate) provided with a pixel driving circuit and a patterned anode 11 (made of ITO) is used as a backplane, and the backplane is placed in a vacuum chamber of a vacuum evaporation device, and the vacuum is evacuated to 1×10 -5 Pa~1×10 -6 After Pa, the hole injection layer 1321, the hole transport layer 1322, the electron blocking layer 1323, the light emitting layer 131, the hole blocking layer 1333, the electron transport layer 1332, the electron injection layer 1331, and the cathode 12 are sequentially formed on the backplane, the hole injection layer 1321, the hole transport layer 1322, the electron blocking layer 1323, the light emitting layer 131, the hole blocking layer 1333, the electron transport layer 1332, the electron injection layer 1331, and the cathode 12. Before use, the backplane is first ultrasonically treated in a detergent, then rinsed with deionized water, and then ultrasonically treated in an acetone-ethanol mixed solvent to remove oil, and then dried in a clean environment until the water and solvent are removed.

[0554] The materials used for the hole injection layer 1321, the hole transport layer 1322, the electron blocking layer 1323, the hole blocking layer 1333, the electron transport layer 1332, the electron injection layer 1331, and the cathode 12 in Examples 1 to 35 and Comparative Examples 1 to 5 are the same. For example, the material of the hole injection layer 1321 in Example 1 is the same as the material of the hole injection layer 1321 in Example X, and the same as the material of the hole injection layer 1321 in Comparative Example Y, wherein X is any one of 2 to 35, Y is any one of 1 to 5, and X and Y are both positive integers.

[0555] Among them, the material of the hole injection layer 1321 includes NPB and HAT-CN doped in NPB (as a P-type dopant, PD), the structure of HAT-CN is shown in the material of the following formula (HIL), and the structure of NPB is shown in the following formula (HTL). The material of the hole transport layer 1322 is NPB. The material of the electron blocking layer 1323 is mCBP, and the structure is shown in the following formula (REBL). The structure of the material of the hole blocking layer 1333 is shown in the following formula (HBL). The material of the electron transport layer 1332 includes an electron transport material with a structure shown in the following formula (ETL) and a material with a structure shown in the following formula (LiQ), and the mass ratio of the two is 1:1. The material of the electron injection layer 1331 is ytterbium (thickness is 1 nm), and the material of the cathode 12 is a magnesium-silver alloy with a magnesium-silver mass ratio of 1:9.

[0556] In Examples 1 to 35 and Comparative Examples 1 to 5, the materials of the light-emitting layer 131 include a guest material, a first host material, and a second host material, and the ratio between the mass sum of the first host material and the second host material and the mass of the guest material is 98:2. The guest material, the first host material, and the second host material are formed into a light-emitting layer by multi-source co-evaporation. Among them, in Examples 1 to 35 and Comparative Examples 1 to 5, the structures of the guest materials are shown in the following formula (RD), and the structures of the second host materials are shown in the formula (RH-N-1). In Examples 1 to 35, the structures of the first host materials are shown in (H-1) to (H-35), respectively. For example, the structure of the first host material in Example X is shown in (HX), and X is any positive integer from 1 to 35. In Comparative Examples 1 to 5, the structures of the first host materials are shown in the following formulas (RH-P1) to (RH-P5), respectively. For example, the structure of the first host material in Comparative Example Y is shown in (RH-PY), and Y is any positive integer from 1 to 5.

[0557]

[0558] It should be noted that (HIL), (HTL), (REBL), (HBL), (ETL), (RD), RH-P1), etc. in the above structural formulas are aliases for each structural formula and are not part of the structural formula structure.

[0559] In Examples 1 to 35 and Comparative Examples 1 to 5, the thicknesses of the hole injection layer 1321, the hole transport layer 1322, the electron blocking layer 1323, the light-emitting layer 131, the hole blocking layer 1333, the electron transport layer 1332, the electron injection layer 1331, and the cathode 12 are 10 nm, 100 nm, 85 nm, 45 nm, 5 nm, 30 nm, 1 nm, and 100 nm, respectively.

[0560] In order to more clearly describe the difference between the light-emitting layer materials of the embodiment and the comparative example, the following Table 6 is used to more clearly show the light-emitting layer materials of the embodiment and the comparative example.

[0561] Table 6

[0562]

[0563]

[0564] Based on the above settings, the light emitting devices 100 of Examples 1 to 35 and Comparative Examples 1 to 5 (see Fig.12 ) at a current density of 15 mA / cm 2 The voltage (V), current efficiency (cd / A) and device life under the conditions are tested. The test results are shown in Table 7 below. The data results of voltage (V), current efficiency (cd / A) and device life in Table 7 are based on Comparative Example 1. The device life is characterized by the parameter LT95.

[0565] Table 7

[0566]

[0567]

[0568] Please refer to Table 7. The current efficiency of the light-emitting devices in Examples 1 to 35 and Comparative Examples 1 to 5 is higher, the device life is longer, and the driving voltage is lower. This is because the first host material in Examples 1 to 35 and Comparative Examples 1 to 5 has a first fused ring structure, which makes the first host material have a better rigid structure, which can reduce the splitting energy level, reduce non-radiative transitions, and improve the efficiency of the light-emitting device. Moreover, in the case where the first host material has a better rigid structure, the first host material can have a higher glass transition temperature, which can improve the film forming property and thermal stability of the light-emitting layer, and improve the luminous life and operational stability of the light-emitting device. In addition, the structure of the first host material in Examples 1 to 35 and Comparative Examples 1 to 5 has heteroatoms (at least one of O, S and N), which can make the first host material have a larger polarity, make the charge transfer interface between the light-emitting layer and the film layer adjacent to it better, facilitate the transfer of charge, improve the carrier injection performance, and reduce the driving voltage of the light-emitting device. Here, the film layer adjacent to the light-emitting layer includes but is not limited to an electron blocking layer and / or a hole blocking layer.

[0569] In Examples 1 to 35 and Comparative Examples 1 to 5, please refer to Table 7. Compared with Comparative Examples 1 to 5, the current efficiency of the light-emitting devices in Examples 1 to 35 is relatively high and the device life is relatively long. This is because in the first host material structure in Examples 1 to 35, at least one Ar is a fused aromatic ring or a fused heteroaromatic ring with a ring number of 12 to 19 atoms, which can improve the molecular rigidity of the first host material, so that the efficiency, luminous life and operational stability of the light-emitting device are further improved.

[0570] In Example 1 to Example 35, please refer to Table 7. Compared with other examples, the current efficiency of the light-emitting devices of Example 16, Example 17 and Example 31 to Example 35 is relatively high, and the device life is relatively long. This is because the first host material in Example 12, Example 16, Example 17 and Example 31 to Example 35 is a deuterated material. When the light-emitting device is working, the location of the exciton recombination mainly occurs on the host material. The intermediate product generated when the exciton recombination has a high energy, and the position with the weakest energy in the host material is the CH bond. By introducing D into the molecule of the first host material, a DH bond is formed. The DH bond energy is shorter than the CH bond length and has a high bond energy, which can improve the molecular stability of the first host material, and can increase the host material's tolerance to high-energy intermediates, thereby further improving the life of the light-emitting device.

[0571] It can be seen from the above embodiments and comparative examples that the light-emitting layer material of the present disclosure includes the above-mentioned first fused ring, which can improve the luminous efficiency and life of the light-emitting device 100 and reduce the driving voltage of the light-emitting device. Moreover, the light-emitting layer material in the present disclosure can be well matched with the performance requirements of the light-emitting device emitting red light, and can be used as the first main material of the red light-emitting device, which is conducive to improving the exciton utilization rate of the light-emitting device, so that the efficiency and life of the light-emitting device are improved.

[0572] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be thought of by any person skilled in the art within the technical scope disclosed in the present disclosure should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A light-emitting layer material, characterized in that: The light-emitting layer material is selected from any one of the structures shown in the following general formula (I); wherein A1, A2 and A3 are the same or different and are independently selected from any one of a substituted or unsubstituted C6-C30 aromatic ring and a substituted or unsubstituted C2-C30 heteroaromatic ring; X1, X2, X3 and X4 are the same or different and are independently selected from direct bonds, O, S, NR A , CR B R C and SiR D R E Any of; R A , R B , R C , R D and R E The same or different, each independently selected from any one of the structures represented by general formula (IA); -Ar (IA) L is selected from any one of a direct bond, a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, a substituted or unsubstituted heterocycloalkylene group, a substituted or unsubstituted alkenylene group, a substituted or unsubstituted alkynylene group, a substituted or unsubstituted arylene group, and a substituted or unsubstituted heteroarylene group; Ar is selected from any one of substituted or unsubstituted C6~C30 aryl, substituted or unsubstituted 3- to 30-membered heteroaryl, amino, substituted or unsubstituted mono-C1~C30 alkylamino, substituted or unsubstituted di-C1~C30 alkylamino, substituted or unsubstituted mono-C6~C30 arylamino, substituted or unsubstituted di-C6~C30 arylamino and substituted or unsubstituted C1~C30 alkyl C6~C30 arylamino.

2. The light-emitting layer material according to claim 1, characterized in that: At least one of A1, A2 and A3 is a fused aromatic ring or a fused heteroaromatic ring having 10 or more atoms in the ring.

3. The light-emitting layer material according to claim 1, characterized in that: At least one of X1, X2, X3 and X4 is selected from NR A , CR B R C and SiR D R E Any of .

4. The light-emitting layer material according to claim 3, characterized in that: At least one of X1, X2, X3 and X4 is NR A .

5. The light-emitting layer material according to claim 3, characterized in that: R included in the general formula (I) A , R B , R C , R D and R E In at least one of the above, Ar is a condensed aromatic ring or a condensed heteroaromatic ring.

6. The light-emitting layer material according to claim 3, characterized in that: R included in the general formula (I) A , R B , R C , R D and R E In at least one of the above, Ar is a fused aromatic ring or a fused heteroaromatic ring having a smaller number of ring atoms than G, and G is the number of ring atoms of the fused ring composed of A1, A2, A3, X1, X2, X3 and X4.

7. The light-emitting layer material according to claim 3, characterized in that: R included in the general formula (I) A , R B , R C , R D and R E In at least one of the above, Ar is a fused aromatic ring or a fused heteroaromatic ring having 12 to 19 atoms in the ring.

8. The light-emitting layer material according to claim 3, characterized in that: R included in the general formula (I) A , R B , R C , R D and R E wherein Ar in at least one of the above is selected from any one of the structures represented by the following general formula (IB-1), general formula (IB-2), general formula (IB-3) and general formula (IB-4); Wherein X5 is selected from direct bond, O, S, NR F and CR G R H Any of; X6 is selected from O, S, Se, NR I and CR J R K Any of; R F , R G , R H , R I , R J and R K the same or different, and are independently selected from deuterium, (C1-C30) alkyl, halo (C1-C30) alkyl, halogen, cyano, (C3-C30) cycloalkyl, 5- to 7-membered heterocycloalkyl, (C2-C30) alkenyl, (C2-C30) alkynyl, (C6-C30) aryl, (C1-C30) alkoxy, (C6-C30) aryloxy, (C2-C30) heteroaryl, (C6-C30) aryl-substituted (C2-C30) heteroaryl, (C6-C30) aryl-substituted (C1-C30) alkyl, (C1-C30) alkyl-substituted (C6-C30) aryl, (C6-C30) 0) any one of an arylthio group, a mono- or di-(C1-C30)alkylamino group, a mono- or di-(C6-C30)arylamino group, a (C1-C30)alkyl(C6-C30)arylamino group, a di-(C6-C30)arylboryl group, a di-(C1-C30)alkylboryl group, a (C1-C30)alkyl(C6-C30)arylboryl group, a tri-(C1-C30)alkylsilyl group, a di-(C1-C30)alkyl(C6-C30)arylsilyl group, a (C1-C30)alkyldi-(C6-C30)arylsilyl group, a tri-(C6-C30)arylsilyl group, an N-carbazolyl group, a carboxyl group, a nitro group and a hydroxyl group; R1~R 10 are the same or different and are independently selected from any one of hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C1-C12 haloalkyl, substituted or unsubstituted C1-C12 alkoxy, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C6-C60 aryl and substituted or unsubstituted C3-C60 heteroaryl; The value of a is selected from any one of 0, 1, 2 and 3, the values ​​of b and c are the same or different, and are independently selected from any one of 0, 1, 2, 3 and 4, and the value of a, b and c is less than or equal to 10; The values ​​of d and f are the same or different and are independently selected from any one of 0, 1, 2 and 3, the value of e is selected from any one of 0, 1, 2, 3 and 4, and the value of d, f and e is less than or equal to 9; The value of g is selected from any one of 0, 1, 2, 3, 4, 5 and 6; The values ​​of h and i are the same or different and are independently selected from any one of 0, 1, 2 and 3, the value of j is selected from any one of 0, 1, 2, 3 and 4, and the values ​​of d, f and e are less than or equal to 9.

9. The light-emitting layer material according to any one of claims 1 to 8, characterized in that At least one of A1, A2 and A3 contains deuterium; and / or, At least one of X1, X2, X3 and X4 is selected from NR A , CR B R C and SiR D R E Any of R A , R B , R C , R D and R E At least one of the L's contains deuterium.

10. The light-emitting layer material according to any one of claims 1 to 8, characterized in that R included in the general formula (I) A , R B , R C , R D and R E L in the formula (I) is selected from a direct bond and any one of the following structures (IC-1) to (IC-8); wherein the values ​​of z1, z2 and z3 are the same or different and are independently selected from any one of 0, 1, 2, 3, 4, 5 and 6; The value of z4 is selected from any one of 0, 1, 2, 3, 4, 5, 6 and 7; the value of z5 is selected from any one of 0, 1, 2, 3, 4 and 5; the value of z4 and z5 is less than or equal to 10; The values ​​of z6 and z7 are the same or different and are independently selected from any one of 0, 1, 2, 3, 4 and 5; the values ​​of z6 and z7 are less than or equal to 8; The value of z8 is selected from any one of 0, 1, 2, 3 and 4; The values ​​of z9 and z10 are the same or different, and are independently selected from any one of 0, 1, 2, 3, 4, 5, 6, 7 and 8.

11. The light-emitting layer material according to any one of claims 1 to 8, characterized in that A1 and A3 are the same or different and are independently selected from any one of the following structures (ID-1) to (ID-6); Among them, * indicates the fusion site; R 11 ~R 16 are the same or different and are independently selected from any one of hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C1-C12 haloalkyl, substituted or unsubstituted C1-C12 alkoxy, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C6-C60 aryl and substituted or unsubstituted C3-C60 heteroaryl; The value of k is selected from any one of 0, 1, 2, 3 and 4; The values ​​of m, p and q are the same or different and are independently selected from any one of 0, 1, 2, 3, 4, 5 and 6; The value of n is selected from any one of 0, 1, 2, 3, 4, 5, 6, 7 and 8; The value of r is selected from any one of 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10.

12. The light-emitting layer material according to any one of claims 1 to 8, characterized in that A2 is selected from any one of the following structures (IE-1) to (IE-3); Among them, * indicates the fusion site; R 17 ~R 19 are the same or different and are independently selected from hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C1-C12 haloalkyl, substituted or unsubstituted C1-C12 alkoxy, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C6-60 aryl and substituted or unsubstituted C3-C60 heteroaryl; The values ​​of s and t are the same or different and are independently selected from any one of 0, 1 and 2; The value of u is selected from any one of 0, 1, 2, 3 and 4.

13. The light-emitting layer material according to any one of claims 1 to 8, characterized in that The light-emitting layer material is selected from any one of the following structures (I-1) to (I-38); Among them, R 11 ~R 19 are the same or different and are independently selected from any one of hydrogen, deuterium, fluorine, chlorine, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C1-C12 haloalkyl, substituted or unsubstituted C1-C12 alkoxy, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C6-C60 aryl and substituted or unsubstituted C3-C60 heteroaryl; L1 and L2 are the same or different and are independently selected from any one of a direct bond, a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, a substituted or unsubstituted heterocycloalkylene group, a substituted or unsubstituted alkenylene group, a substituted or unsubstituted alkynylene group, a substituted or unsubstituted arylene group and a substituted or unsubstituted heteroarylene group; Ar1 and Ar2 are the same or different and are independently selected from any one of substituted or unsubstituted C6-C30 aryl, substituted or unsubstituted 3- to 30-membered heteroaryl, amino, substituted or unsubstituted mono-C1-C30 alkylamino, substituted or unsubstituted di-C1-C30 alkylamino, substituted or unsubstituted mono-C6-C30 arylamino, substituted or unsubstituted di-C6-C30 arylamino and substituted or unsubstituted C1-C30 alkyl C6-C30 arylamino; N is nitrogen; M and E are the same or different and are independently selected from direct bonds, O, S, NR A and CR B R C Any one of , and M and E are not direct bonds at the same time; The value of k is selected from any one of 0, 1, 2, 3 and 4; The values ​​of m, p and q are the same or different and are independently selected from any one of 0, 1, 2, 3, 4, 5 and 6; The value of n is selected from any one of 0, 1, 2, 3, 4, 5, 6, 7 and 8; The value of r is selected from any one of 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10; The values ​​of s and t are the same or different and are independently selected from any one of 0, 1 and 2; The value of u is selected from any one of 0, 1, 2, 3 and 4.

14. The light-emitting layer material according to any one of claims 1 to 8, characterized in that The reorganization energy of the light-emitting layer material ranges from 0.1 eV to 0.3 eV.

15. The light-emitting layer material according to any one of claims 1 to 8, characterized in that The hole mobility of the light-emitting layer material is in the range of 1×10 -5 m / V·s~1×10 -4 m / V·s.

16. The light-emitting layer material according to any one of claims 1 to 8, characterized in that The absolute value of the highest occupied molecular orbital energy level of the light-emitting layer material ranges from 4.80 eV to -5.20 eV.

17. The light-emitting layer material according to any one of claims 1 to 8, characterized in that The absolute value of the lowest unoccupied molecular orbital energy level of the light-emitting layer material is in the range of 1.20 eV to 1.40 eV.

18. The light-emitting layer material according to any one of claims 1 to 8, characterized in that The absolute value of the triplet energy level of the light-emitting layer material ranges from 2.20 eV to 2.60 eV.

19. A light emitting device, characterized in that: include: An anode and a cathode arranged opposite to each other; The light-emitting layer is located between the anode and the cathode; the material of the light-emitting layer includes a first host material, and the first host material includes the light-emitting layer material according to any one of claims 1 to 18.

20. The light emitting device according to claim 19, characterized in that: The material of the light-emitting layer further includes: a guest material; and the triplet energy level of the first host material is greater than the triplet energy level of the guest material.

21. The light emitting device according to claim 20, characterized in that: The wavelength of the light emitted by the guest material is in the range of 600nm to 650nm.

22. The light emitting device according to any one of claims 19 to 21, characterized in that: The material of the light-emitting layer further includes: a second host material; the hole mobility of the second host material is smaller than the hole mobility of the first host material, and the electron mobility of the second host material is larger than the electron mobility of the first host material.

23. The light emitting device according to claim 22, characterized in that: The structure of the second host material is the following structure (RH-N-1):

24. The light emitting device according to claim 22, characterized in that: The first host material and the second host material form a first exciplex; The maximum emission wavelength of the first exciplex is greater than the maximum emission wavelength of the first host material, and greater than the maximum emission wavelength of the second host material.

25. The light emitting device according to claim 24, characterized in that: The maximum emission wavelength of the first host material is smaller than the maximum emission wavelength of the second host material; The difference between the maximum emission wavelength of the first exciplex and the maximum emission wavelength of the second host material is greater than or equal to 20 nm.

26. The light emitting device according to claim 24, characterized in that: The maximum emission wavelength of the first host material is in the range of 380nm to 430nm; and / or, The maximum emission wavelength of the second host material is in the range of 400nm to 450nm; and / or, The maximum emission wavelength of the first exciplex is in the range of 480 nm to 550 nm.

27. The light emitting device according to claim 24, characterized in that: The material of the light-emitting layer includes a guest material; There is an overlapping region between the normalized fluorescence emission spectrum of the first exciplex and the normalized absorption spectrum of the guest material, and the integral area of ​​the overlapping region is greater than or equal to 20% of the integral area of ​​the normalized fluorescence emission spectrum of the first exciplex.

28. A display panel, characterized in that: include: A light emitting device, a light emitting device according to any one of claims 19 to 27; A pixel driving circuit, electrically connected to the light emitting device; The pixel driving circuit is used to control the light emitting device to emit light.

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