Optical proximity correction method and optical proximity correction system

Abstract

The invention relates to an optical proximity correction method and an optical proximity correction system. The optical proximity correction method includes the following steps. Obtaining a test layout, and dividing the test layout into a plurality of test sub-graphs according to graph characteristics; matching process requirements, extracting target graphs from the plurality of test sub-graphs, and sequentially arranging the plurality of target graphs into a test waiting queue; according to the queue serial number of each target graph in the test waiting queue, distributing the target graphs of the target number to different computing nodes for optical proximity correction calculation to obtain corresponding correction graphs; and determining a target menu parameter of the optical proximity correction model according to the optical proximity correction verification result of each correction pattern. According to the optical proximity correction method, the OPC correction efficiency and the photoetching process yield can be improved.

Description

Technical Field

[0001] The present disclosure relates to the technical field of integrated circuits, and in particular to an optical proximity correction method and an optical proximity correction system. Background Art

[0002] With the continuous development of semiconductor technology, the size of the pattern in the photolithography process has begun to be smaller than the wavelength of the light source of the photolithography machine, which is easy to cause various optical proximity effects and affect the yield and stability of the photolithography process. Therefore, before making the mask, it is necessary to perform optical proximity correction (OPC) on the design pattern on the layout.

[0003] However, due to the complexity of the optical proximity effect correction algorithm, there are a large number of parameters in the algorithm menu that need to be adjusted and optimized according to the mask shape characteristics and lithography process flow. Therefore, how to speed up this adjustment and optimization process has become the top priority for improving work efficiency and lithography process yield. Summary of the invention

[0004] Based on this, the embodiments of the present disclosure provide an optical proximity correction method and an optical proximity correction system, which are beneficial to improving the OPC correction efficiency and the yield of the lithography process.

[0005] In order to achieve the above objectives, firstly, some embodiments of the present disclosure provide an optical proximity correction method, comprising the following steps.

[0006] A test pattern is obtained, and the test pattern is divided into a plurality of test sub-patterns according to pattern features.

[0007] According to the process requirements, a target pattern is extracted from a plurality of test sub-patterns, and the plurality of target patterns are sequentially arranged into a test waiting queue.

[0008] According to the queue sequence number of each target graphic in the test waiting queue, a target number of target graphics are distributed to different computing nodes for optical proximity correction calculation to obtain corresponding correction graphics.

[0009] According to the optical proximity correction verification results of each correction figure, the target menu parameters of the optical proximity correction model are determined.

[0010] In some embodiments of the present disclosure, the step of determining the target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each correction graphic further includes the following steps.

[0011] Obtain a lithography verification pattern corresponding to the correction pattern.

[0012] The lithography verification pattern corresponding to the same correction pattern is compared with the target pattern to obtain the optical proximity correction verification result of the correction pattern.

[0013] When the optical proximity correction verification results of each correction pattern meet the requirements, the optical proximity correction menu parameters used by each correction pattern when performing the optical proximity correction calculation are output as the target menu parameters.

[0014] In some embodiments of the present disclosure, the step of determining the target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each correction graphic further includes the following steps.

[0015] When the optical proximity correction verification result of any correction pattern does not meet the requirements, the optical proximity correction calculation being performed by each calculation node is terminated.

[0016] Based on each target pattern, the test waiting queue is reset, and the optical proximity correction menu parameters corresponding to each target pattern are adjusted to reset menu parameters.

[0017] According to the queue number of each target graphic in the test waiting queue after the reset, the target number of target graphics are allocated to different computing nodes, and the optical proximity correction calculation is performed according to the reset menu parameters to regain the corrected graphics and determine the target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each corrected graphic.

[0018] In some embodiments of the present disclosure, the optical proximity correction method further includes: after dividing the test layout into a plurality of test sub-patterns according to the pattern features, storing each test sub-pattern in a database. Accordingly, the target pattern is extracted from the database in response to the menu parameter debugging instruction.

[0019] In some embodiments of the present disclosure, the optical proximity correction method further includes: acquiring a mask design layout; performing optical proximity correction on the mask design layout according to target menu parameters to obtain a mask layout.

[0020] In some embodiments of the present disclosure, the graphic features used to divide the test layout include: graphic geometric features and lithography optical features; wherein the graphic geometric features include: at least one of graphic position features, graphic dimension features or graphic density features; the lithography optical features include: at least one of edge placement error, mask error enhancement factor, process variation bandwidth or normalized logarithmic slope of light intensity.

[0021] On the other hand, the embodiments of the present disclosure further provide an optical proximity correction system for implementing the optical proximity correction methods in some of the above embodiments. The optical proximity correction system includes: a graphics processing unit, a graphics correction unit, and a menu parameter debugging unit.

[0022] The graphics processing unit is configured to: obtain a test layout, divide the test layout into multiple test sub-graphics according to graphic features; and, match process requirements, extract target graphics from the multiple test sub-graphics, and arrange the multiple target graphics in sequence into a test waiting queue.

[0023] The graphics correction unit includes a graphics allocation module and a target number of computing nodes; wherein the graphics allocation module is connected to the graphics processing unit and each computing node, and is configured to: allocate a target number of target graphics to different computing nodes according to the queue sequence number of each target graphics in the test waiting queue; the computing node is configured to perform optical proximity correction calculation on the target graphics to obtain a corresponding corrected graphics.

[0024] The menu parameter debugging unit is connected to the graphic correction unit and is configured to determine the target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each correction graphic.

[0025] In some embodiments of the present disclosure, the menu parameter debugging unit includes: a graphic verification module and a menu parameter determination module.

[0026] The pattern verification module is connected to each computing node and is configured to: obtain a lithography verification pattern corresponding to a correction pattern, and compare the lithography verification pattern corresponding to the same correction pattern with a target pattern to obtain an optical proximity correction verification result of the correction pattern.

[0027] The menu parameter determination module is connected to the graphic verification module and is configured to output the optical proximity correction menu parameters used by each correction graphic when performing optical proximity correction calculation as target menu parameters when the optical proximity correction verification results of each correction graphic meet the requirements.

[0028] In some embodiments of the present disclosure, the menu parameter debugging unit also includes a debugging control module.

[0029] The debugging control module is connected to the graphic verification module, the graphics processing unit, the graphic allocation module, and each computing node, and is configured to: when the optical proximity correction verification result of any corrected graphic does not meet the requirements, send a first instruction to each computing node to terminate the optical proximity correction calculation, send a second instruction to the graphics processing unit to reset the test waiting queue based on each target graphic, send a third instruction to the graphic allocation module to allocate a target number of target graphics to different computing nodes according to the queue sequence number of each target graphic in the test waiting queue after the reset, and adjust the optical proximity correction menu parameters used by each target graphic to the reset menu parameters.

[0030] Accordingly, each computing node is further configured to perform optical proximity correction calculation according to the reset menu parameters.

[0031] In some embodiments of the present disclosure, the graphics processing unit is further configured to: obtain a mask design layout. The graphics correction unit is further configured to: perform optical proximity correction on the mask design layout according to the target menu parameters to obtain the mask layout.

[0032] The optical proximity correction method and optical proximity correction system provided by the embodiments of the present disclosure are as described above. In the embodiments of the present disclosure, after the test layout is first divided into a plurality of test sub-graphs according to the graphic features, the target graph can be selected from the plurality of test sub-graphs according to the process requirements, and each target graph can be arranged in sequence as a test waiting queue. In this way, the present disclosure can allocate the target number of target graphs to different computing nodes according to the queue sequence number of each target graph in the test waiting queue to perform optical proximity correction calculations respectively to obtain correction graphs, so as to determine the target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each correction graph. Therefore, compared with the OPC correction and verification of the overall test layout in the related art, the present disclosure can effectively reduce unnecessary waiting time and reduce inter-process communication, so as to increase the calculation operation speed to accelerate the iteration process of the OPC menu parameters, thereby more quickly determining the target menu parameters that meet the requirements, thereby facilitating the improvement of the OPC correction efficiency and the yield of the lithography process. In addition, the embodiments of the present disclosure can also be applied to any number of computing nodes to have strong scalability. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0034] Figure 1 is a flow chart of an optical proximity correction method provided in some embodiments;

[0035] Figure 2 A schematic diagram of the structure of a test layout and a test sub-pattern in step S100 provided in some embodiments;

[0036] Figure 3 A schematic diagram of the structure of another test layout and test sub-patterns in step S100 provided in some embodiments;

[0037] Figure 4 is a flow chart of step S400 in an optical proximity correction method provided in some embodiments;

[0038] Figure 5 is a flow chart of step S400 in another optical proximity correction method provided in some embodiments;

[0039] Figure 6 A schematic diagram for guiding the execution process of an optical proximity correction method provided in some embodiments;

[0040] Figure 7 A flowchart of another optical proximity correction method provided in some embodiments;

[0041] Figure 8 is a structural example diagram of an optical proximity correction system provided in some embodiments;

[0042] Fig. 9 is a structural example diagram of another optical proximity correction system provided in some embodiments;

[0043] Fig.10 FIG. 4 is a diagram showing an example structure of yet another optical proximity correction system provided in some embodiments.

[0044] Description of reference numerals:

[0045] 1-test pattern, 11-first test sub-pattern, 12-second test sub-pattern, 13-third test sub-pattern, 11A-first one-dimensional test sub-pattern, 11B-second one-dimensional test sub-pattern, 12A-first two-dimensional test sub-pattern, 12B-second two-dimensional test sub-pattern;

[0046] 2-graphics processing unit, 3-graphics correction unit, 31-graphics allocation module, 32-computing node, 4-menu parameter debugging unit, 41-graphics verification module, 42-menu parameter determination module, 43-debugging control module. DETAILED DESCRIPTION

[0047] In order to facilitate understanding of the present disclosure, the present disclosure will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present disclosure more thorough and comprehensive.

[0048] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. The terms used herein in the specification of the present disclosure are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure.

[0049] It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer or part discussed below can be represented as a second element, component, region, layer or part.

[0050] It should be understood that when an element is considered to be "connected" to another element, it can be directly connected to the other element, or connected to the other element through an intermediate element. In addition, the "connection" in the following embodiments should be understood as "electrical connection", "communication connection", etc. if there is transmission of electrical signals or data between the connected objects.

[0051] It should be understood that the singular forms "a", "an" and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" etc. specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof.

[0052] At present, due to the complexity of the optical proximity effect correction algorithm, there are a large number of parameters in the algorithm menu that need to be adjusted and optimized according to the mask shape characteristics and lithography process flow. Therefore, how to speed up this adjustment and optimization process has become the top priority for improving work efficiency and lithography process yield.

[0053] Based on this, see Figure 1 Some embodiments of the present disclosure provide an optical proximity correction method, including steps S100 to S400.

[0054] S100, obtaining a test layout, and dividing the test layout into a plurality of test sub-graphs according to graph features.

[0055] S200, matching process requirements, extracting a target pattern from a plurality of test sub-patterns, and arranging the plurality of target patterns in sequence into a test waiting queue.

[0056] Here, the process requirements vary depending on the matching test layout and the corresponding lithography process, and can be determined according to actual needs. After clarifying the process requirements, the process requirements can be matched to select a suitable number of test sub-patterns with representative features from multiple test sub-patterns as target patterns. The number of target patterns is less than or equal to the number of test sub-patterns. In addition, after selecting each target pattern, each target pattern can also be arranged in order as a test waiting queue according to preset rules such as priority sorting of the target pattern.

[0057] S300 , according to the queue sequence number of each target graphic in the test waiting queue, allocating a target number of target graphics to different computing nodes for optical proximity correction calculation to obtain corresponding correction graphics.

[0058] Here, the computing node may be, for example, one or a group of physical machines or virtual machines to provide computing and storage resources.

[0059] S400, determining target menu parameters of an optical proximity correction model according to the optical proximity correction verification results of each correction pattern.

[0060] In the embodiment of the present disclosure, after the test layout is first divided into a plurality of test sub-graphs according to the graphic features, the target graph can be selected from the plurality of test sub-graphs according to the process requirements, and each target graph can be arranged in sequence as a test waiting queue. In this way, the present disclosure can allocate the target number of target graphs to different computing nodes according to the queue sequence number of each target graph in the test waiting queue to perform optical proximity correction calculations to obtain correction graphs, so as to determine the target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each correction graph. Therefore, compared with the OPC correction and verification of the overall test layout in the related art, the present disclosure can effectively reduce unnecessary waiting time and reduce inter-process communication, so as to increase the calculation operation speed to accelerate the iteration process of the OPC menu parameters, thereby determining the target menu parameters that meet the requirements more quickly, which is conducive to improving the OPC correction efficiency and the lithography process yield. In addition, the embodiment of the present disclosure can also be applied to any number of computing nodes to have strong scalability.

[0061] It should be added that, in the production process of semiconductor devices, optical proximity correction can compensate for the distortion of the pattern transfer during the photolithography process of the mask design layout by pre-correcting the mask design layout. However, since optical proximity correction requires the use of a complex and accurate calculation model, and the number of patterns in the mask design layout is huge, optical proximity correction is very time-consuming and resource-consuming. Therefore, the test layout mentioned in the embodiment of the present disclosure may be a mask design layout, or a test layout specially designed for the mask design layout, and only includes a layout with typical graphic features. Moreover, in step S100, the test layout may also have a variety of different implementation methods according to the division method of graphic features.

[0062] In some embodiments of the present disclosure, the graphic features used to divide the test layout include: graphic geometric features and photolithography optical features.

[0063] For example, the graphic geometric feature includes at least one of a graphic position feature, a graphic dimension feature, or a graphic density feature.

[0064] For some examples, see Figure 2 , the graphical position feature can be, for example, a test version Figure 1 The distribution positions of different graphics in the test sub-graphics can be determined, for example, by dividing the test sub-graphics from top to bottom and from left to right to obtain the following Figure 2 The first test sub-pattern 11, the second test sub-pattern 12 and the third test sub-pattern 13 shown in FIG. Also, optionally, adjacent test sub-patterns may have overlapping areas.

[0065] For some examples, see Figure 3 , the graph dimension feature can be, for example, the test version Figure 1 For example, the test sub-graphs can be divided into one-dimensional and two-dimensional graphs to obtain the following: Figure 3 The first one-dimensional test sub-pattern 11A, the second one-dimensional test sub-pattern 11B, the first two-dimensional test sub-pattern 12A and the second two-dimensional test sub-pattern etc. are shown in FIG.

[0066] Here, one-dimensional graphics and two-dimensional graphics are divided according to the degree of regular arrangement of the graphics; among them, a graphic arranged according to a fixed period in both the first direction and the second direction is a one-dimensional graphic; a graphic arranged irregularly in the first direction and / or the second direction is a two-dimensional graphic. The first direction and the second direction intersect, for example, orthogonal. The first direction is, for example, the X direction, and the second direction is, for example, the Y direction.

[0067] In some examples, the pattern density feature can be, for example, a test version. Figure 1 The distribution density of multiple graphics in the test may be determined. For example, the test sub-graphics may be divided according to the density of the graphics distribution.

[0068] For example, the lithography optical feature includes at least one of: edge placement error (Edge Placement Error, referred to as EPE), mask error enhancement factor (Mask Error Enhancement Factor, referred to as MEEF), process variation bandwidth (Process variation band, PV band) or normalized image log slope (Normalized Image Log Slope, referred to as NILS).

[0069] Here, the edge placement error is used as an indicator to measure the quality of optical proximity correction. Specifically, it refers to the difference between the edge of the photoresist pattern after exposure and the edge of the design pattern simulated by the lithography software. A small edge placement error means that the pattern after exposure is closer to the design pattern. The mask error enhancement factor refers to the slope of the change of the photoresist line width on the wafer (CD wafer) with the line width of the pattern on the mask (CD mask). The process variation bandwidth refers to the difference between the maximum line width and the minimum line width obtained by the area between the outer contour and the inner contour under different focus values ​​and threshold combinations in the aerial image when the pattern contour is simulated by lithography under a given set of {focus point, exposure dose} conditions. That is, the process variation bandwidth is the range of exposure results caused by the introduction of process parameter changes in lithography. These process parameters generally include exposure energy, focus value and mask pattern size, and the range of these parameters is determined by the process level. The normalized logarithmic slope of light intensity is used to evaluate the quality of aerial images. The larger the logarithmic slope value, the higher the spatial imaging contrast and the better the imaging quality.

[0070] In some embodiments of the present disclosure, please refer to Figure 2 and Figure 3 The optical proximity correction method further includes: after executing step S100 to divide the test layout into a plurality of test sub-patterns according to the pattern features, storing each test sub-pattern in a database. Accordingly, the target pattern in step S200 is extracted from the database in response to the menu parameter debugging instruction.

[0071] In some embodiments of the present disclosure, please refer to Figure 4 In step S400, target menu parameters of the optical proximity correction model are determined according to the optical proximity correction verification results of each correction pattern, and steps S410 to S430 are also included.

[0072] S410, obtaining a lithography verification pattern corresponding to the correction pattern.

[0073] S420, comparing the lithography verification pattern corresponding to the same correction pattern with the target pattern to obtain an optical proximity correction verification result of the correction pattern.

[0074] S430 , when the optical proximity correction verification results of each correction pattern meet the requirements, outputting the optical proximity correction menu parameters used by each correction pattern when performing the optical proximity correction calculation as the target menu parameters.

[0075] It can be understood that in step S410, obtaining the lithography verification pattern corresponding to the correction pattern can be specifically performed as follows: performing lithography simulation on the correction pattern, so as to use the pattern obtained after simulated etching as the lithography verification pattern. Thus, in step S420, for each correction pattern, the corresponding lithography verification pattern and the target pattern can be compared to determine whether the optical proximity correction verification result of the correction pattern meets the requirements according to the degree of consistency between the lithography verification pattern and the target pattern. In addition, the degree of consistency between the lithography verification pattern and the target pattern can be determined by matching the process requirements.

[0076] In addition, the optical proximity correction verification result of the correction pattern may not be limited to the relevant description in the above embodiment. For example, the calculated data of the correction pattern may be compared with the experimental data that has not been used when the OPC model is established to obtain the corresponding verification result.

[0077] In some embodiments of the present disclosure, please refer to Figure 5 In step S400, target menu parameters of the optical proximity correction model are determined according to the optical proximity correction verification results of each correction pattern, and steps S440 to S460 are also included.

[0078] S440, when the optical proximity correction verification result of any correction pattern does not meet the requirement, terminating the optical proximity correction calculation being performed by each calculation node.

[0079] Here, it can be understood that the time to obtain the optical proximity correction verification results of the correction patterns corresponding to different target patterns may be different according to the time node when each target pattern in the test waiting queue is assigned to the computing node, the time required for the optical proximity correction calculation of different target patterns, and the complexity of the correction patterns corresponding to different target patterns, etc. Based on this, along with the appearance order of the optical proximity correction verification results of the correction patterns corresponding to each target pattern, the optical proximity correction verification result of any correction pattern does not meet the requirements, which means that as long as the optical proximity correction verification result of the correction pattern corresponding to one target pattern does not meet the requirements, the optical proximity correction calculation being performed by each computing node can be terminated and the subsequent steps can be executed.

[0080] S450: based on each target pattern, resetting the test waiting queue, and adjusting the optical proximity correction menu parameters corresponding to each target pattern to be reset menu parameters.

[0081] S460, according to the queue number of each target graphic in the test waiting queue after the reset, the target number of target graphics are allocated to different computing nodes, and the optical proximity correction calculation is performed according to the reset menu parameters to regain the correction graphics and determine the target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each correction graphic.

[0082] As described above, in the embodiments of the present disclosure, when determining the target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each correction graphic, the target menu parameters can be output when the optical proximity correction verification results of the correction graphics corresponding to each target graphic meet the requirements, and when the optical proximity correction verification result of the correction graphics corresponding to any target graphic does not meet the requirements, the calculation of each calculation node is promptly terminated to minimize the iteration time of each menu parameter of the optical proximity correction, and the test waiting queue is immediately reset and the optical proximity correction menu parameters corresponding to each target graphic are adjusted to reset menu parameters to restart the optical proximity correction calculation, so as to obtain the target menu parameters as soon as possible.

[0083] In order to more clearly explain the optical proximity correction method in the above embodiment, Figure 6 Understand.

[0084] See also Figure 6 After obtaining the test layout, the test layout can be divided into multiple test sub-graphs according to the graphic features and stored in the database. When the OPC menu parameters need to be debugged (i.e., the menu parameter debugging instruction is received), the test sub-graph is extracted from the database as the target graph according to the process requirements and loaded into the test waiting queue, so that according to the queue sequence number of each target graph in the test waiting queue, the target number of target graphs are allocated to different computing nodes for optical proximity correction calculation, thereby obtaining the corresponding correction graph.

[0085] like Figure 6 As shown in , according to the queue sequence number of each target graphic in the test waiting queue, the target number of target graphics can be sequentially allocated to each computing node, where the number of computing nodes is the aforementioned target number. Moreover, after completing the OPC correction of the corresponding target graphic, any computing node can undertake the OPC correction task of the corresponding target graphic according to the previous sequence number of the target graphic that has not been assigned in the test waiting queue. For example, after computing node ① completes the OPC correction task of target graphic ①, if the previous sequence number of the target graphic that has not been assigned in the test waiting queue at this time is ⑤, then computing node ① continues to undertake the OPC correction task of target graphic ⑤.

[0086] Furthermore, the corrected graphics of the target graphics that have completed OPC correction can enter the OPC verification process. For example, after verifying the corrected graphics of target graphics ①, verification result ① can be obtained; after verifying the corrected graphics of target graphics ④, verification result ④ can be obtained.

[0087] From the above, it is possible to monitor in real time whether the OPC verification results all meet the requirements, that is, when any verification result does not meet the requirements, the calculation of the computing node can be stopped, the menu parameters can be adjusted, and the test waiting queue can be reset to start the next iteration calculation of the menu parameters; otherwise, when the optical proximity correction verification results of the correction graphics corresponding to each target graphic meet the requirements, the optical proximity correction menu parameters used by each correction graphic when performing the optical proximity correction calculation can be output as the target menu parameters. In this way, the disclosed embodiment can effectively reduce the debugging time of the OPC menu parameters and reduce the computing resource usage to accelerate the iteration process, thereby facilitating the improvement of the yield of the photolithography process.

[0088] In some embodiments of the present disclosure, please refer to Figure 7 The optical proximity correction method also includes steps S500 to S600.

[0089] S500, obtaining a mask design layout.

[0090] S600, performing optical proximity correction on the mask design layout according to the target menu parameters to obtain the mask layout.

[0091] In the disclosed embodiment, based on the target menu parameters obtained by the aforementioned method, after obtaining the mask design layout and performing optical proximity correction, it is possible to ensure that a mask layout with better graphic correction quality is obtained, so as to improve the yield of the lithography process through the mask layout during the production stage.

[0092] The embodiments of the present disclosure also provide an optical proximity correction system for implementing the optical proximity correction method in some of the above embodiments. The optical proximity correction system also has the technical advantages of the above optical proximity correction method, which will not be described in detail here.

[0093] See also Figure 8, the optical proximity correction system includes: a graphics processing unit 2, a graphics correction unit 3 and a menu parameter debugging unit 4. The graphics processing unit 2 is configured to: obtain a test layout, divide the test layout into multiple test sub-graphs according to the graphics features; and, match the process requirements, extract the target graphics from the multiple test sub-graphs, and arrange the multiple target graphics in sequence as a test waiting queue. The graphics correction unit 3 includes a graphics allocation module 31 and a target number of computing nodes 32; wherein the graphics allocation module 31 is connected to the graphics processing unit 2 and each computing node 32, and is configured to: according to the queue sequence number of each target graphic in the test waiting queue, allocate the target number of target graphics to different computing nodes 32; the computing node 32 is configured to perform optical proximity correction calculation on the target graphic to obtain the corresponding correction graphic. The menu parameter debugging unit 4 is connected to the graphics correction unit 3, and is configured to: determine the target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each correction graphic.

[0094] Illustratively, computing node 32 is one or a group of physical machines or virtual machines to provide computing and storage resources.

[0095] In some examples, computing node 32 is a central processing unit (CPU).

[0096] In some embodiments of the present disclosure, please refer to Fig. 9 The menu parameter debugging unit 4 includes: a graphic verification module 41 and a menu parameter determination module 42. The graphic verification module 41 is connected to each computing node 32 and is configured to: obtain a lithography verification graphic corresponding to a correction graphic, and compare the lithography verification graphic corresponding to the same correction graphic with a target graphic to obtain an optical proximity correction verification result of the correction graphic. The menu parameter determination module 42 is connected to the graphic verification module 41 and is configured to: when the optical proximity correction verification results of each correction graphic meet the requirements, output the optical proximity correction menu parameters used by each correction graphic when performing the optical proximity correction calculation as the target menu parameters.

[0097] In some embodiments of the present disclosure, please refer to Fig.10, the menu parameter debugging unit 4 also includes a debugging control module 43. The debugging control module 43 is connected to the graphic verification module 41, the graphic processing unit 2, the graphic allocation module 31, and each computing node 32, and is configured to: when the optical proximity correction verification result of any correction graphic does not meet the requirements, send a first instruction to each computing node 32 to terminate the optical proximity correction calculation, send a second instruction to the graphic processing unit 2 to reset the test waiting queue based on each target graphic, send a third instruction to the graphic allocation module 31 to allocate the target number of target graphics to different computing nodes 32 according to the queue sequence number of each target graphic in the test waiting queue after the reset, and adjust the optical proximity correction menu parameters used by each target graphic to the reset menu parameters. Accordingly, each computing node 32 is also configured to: perform the optical proximity correction calculation according to the reset menu parameters.

[0098] It should be added that, in some embodiments of the present disclosure, the graphics processing unit 2 is further configured to: obtain a mask design layout. The graphics correction unit 3 is further configured to: perform optical proximity correction on the mask design layout according to the target menu parameters to obtain a mask layout.

[0099] In addition, in the optical proximity correction system provided by some of the above embodiments, the terms "module" and "unit" used in this specification can be used to represent computer-related entities, hardware, firmware, a combination of hardware and software, software, or software in execution. For example, a "module" or "unit" can be, but is not limited to: a process running on a processor, a processor, an object, an executable file, an execution thread, a program and / or a computer. For example, a "module" or "unit" can be executed from various computer-readable media having various data structures stored thereon.

[0100] In the above embodiments provided in the present disclosure, it should be understood that the disclosed "modules" or "units" can be implemented in other ways. For example, the devices described above are only schematic. For example, the division of modules or units is only a division of logical functions, and there may be other division methods in actual implementation, such as multiple modules or units can be combined or integrated into another device, or some features can be ignored or not executed. In addition, the connection between each other described can be through some interfaces, indirect coupling or communication connection of modules or units, which can be electrical, mechanical or other forms. The units or modules described separately may or may not be physically separated. Some or all of the units or modules can be selected according to actual needs to achieve the purpose of the embodiment scheme of the present disclosure.

[0101] The disclosed embodiment also provides an electronic device, including a memory and a processor. The memory stores computer instructions. When the computer instructions are executed by the processor, the optical proximity correction method described in any of the aforementioned embodiments is implemented.

[0102] The embodiments of the present disclosure further provide a storage medium, which stores computer instructions that are suitable for execution by a processor, and when the computer instructions are executed by the processor, the optical proximity correction method as described in any of the aforementioned embodiments is implemented.

[0103] Those of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a readable storage medium. When the computer program is executed, the process of the embodiments of the above-mentioned methods can be implemented. Among them, any reference to the memory or other medium used in the embodiments provided by the present disclosure can include at least one of non-volatile and volatile memory. Non-volatile memory may include read-only memory (ROM), floppy disk, flash memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), etc. Volatile memory may include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The processor involved in the embodiments provided by the present disclosure may be a general-purpose processor, a central processing unit, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but is not limited thereto.

[0104] In the above storage medium and electronic device, when the computer instruction is executed by the processor, the optical proximity correction method described in any of the above embodiments is adopted. In this way, the above storage medium and electronic device are used for optical proximity correction, which is conducive to reducing research and development costs while improving optical proximity correction efficiency and photolithography process yield.

[0105] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0106] The above-described embodiments only express several implementation methods of the present disclosure, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present disclosure, and these all belong to the protection scope of the present disclosure. Therefore, the protection scope of the patent of the present disclosure shall be subject to the attached claims.

Claims

1. An optical proximity correction method, characterized in that: include: Acquire a test pattern, and divide the test pattern into a plurality of test sub-patterns according to pattern features; Matching the process requirements, extracting a target pattern from the plurality of test sub-patterns, and arranging the plurality of target patterns in sequence into a test waiting queue; According to the queue sequence number of each of the target graphics in the test waiting queue, a target number of the target graphics are allocated to different computing nodes for optical proximity correction calculation to obtain corresponding corrected graphics; According to the optical proximity correction verification results of the correction patterns, target menu parameters of the optical proximity correction model are determined.

2. The optical proximity correction method according to claim 1, characterized in that: Determining target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each correction pattern includes: Obtaining a lithography verification pattern corresponding to the correction pattern; Comparing the lithography verification pattern corresponding to the same correction pattern with the target pattern to obtain the optical proximity correction verification result of the correction pattern; When the optical proximity correction verification results of the correction patterns meet the requirements, the optical proximity correction menu parameters used by the correction patterns when performing the optical proximity correction calculation are output as the target menu parameters.

3. The optical proximity correction method according to claim 2, characterized in that: The step of determining target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each correction pattern further comprises: When the optical proximity correction verification result of any of the correction patterns does not meet the requirements, terminating the optical proximity correction calculation being performed by each of the calculation nodes; Based on each of the target graphics, resetting the test waiting queue, and adjusting the optical proximity correction menu parameters corresponding to each of the target graphics to reset menu parameters; According to the queue sequence number of each target graphic in the test waiting queue after the reset, the target number of target graphics are allocated to different computing nodes, and the optical proximity correction calculation is performed according to the reset menu parameters to regain the correction graphics and determine the target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each correction graphic.

4. The optical proximity correction method according to claim 1, characterized in that: Also includes: After dividing the test pattern into a plurality of test sub-patterns according to the pattern features, storing each of the test sub-patterns in a database; Wherein, the target graphics are extracted from the database in response to the menu parameter debugging instruction.

5. The optical proximity correction method according to claim 1, characterized in that: Also includes: Obtain the mask design layout; Performing optical proximity correction on the mask design layout according to the target menu parameters to obtain a mask layout.

6. The optical proximity correction method according to any one of claims 1 to 5, characterized in that: The graphic features used to divide the test layout include: graphic geometric features and photolithography optical features; wherein, The graphic geometric feature includes: at least one of a graphic position feature, a graphic dimension feature or a graphic density feature; The photolithography optical feature includes at least one of an edge placement error, a mask error enhancement factor, a process variation bandwidth, or a normalized logarithmic slope of light intensity.

7. An optical proximity correction system, characterized in that: include: The graphics processing unit is configured to: obtain a test layout, and divide the test layout into a plurality of test sub-graphs according to the graph features; and, matching the process requirements, extracting a target pattern from the plurality of test sub-patterns, and arranging the plurality of target patterns in sequence into a test waiting queue; A graphics correction unit, comprising a graphics allocation module and a target number of computing nodes; wherein the graphics allocation module is connected to the graphics processing unit and each of the computing nodes, and is configured to: allocate a target number of target graphics to different computing nodes according to the queue sequence number of each of the target graphics in the test waiting queue; the computing nodes are configured to perform the optical proximity correction calculation on the target graphics to obtain the corresponding corrected graphics; The menu parameter debugging unit is connected to the graphic correction unit and is configured to determine the target menu parameters of the optical proximity correction model according to the optical proximity correction verification results of each correction graphic.

8. The optical proximity correction system according to claim 7, characterized in that: The menu parameter debugging unit comprises: A pattern verification module, connected to each of the computing nodes, is configured to: obtain a lithography verification pattern corresponding to the correction pattern, and compare the lithography verification pattern corresponding to the same correction pattern with the target pattern to obtain the optical proximity correction verification result of the correction pattern; The menu parameter determination module is connected to the graphic verification module and is configured to: when the optical proximity correction verification results of each correction graphic meet the requirements, output the optical proximity correction menu parameters used by each correction graphic when performing the optical proximity correction calculation as the target menu parameters.

9. The optical proximity correction system according to claim 8, characterized in that: The menu parameter debugging unit also includes: a debugging control module connected to the graphic verification module, the graphics processing unit, the graphic allocation module, and each of the computing nodes, and configured to: when the optical proximity correction verification result of any of the correction graphics does not meet the requirements, send a first instruction to each of the computing nodes to terminate the optical proximity correction calculation, send a second instruction to the graphics processing unit to reset the test waiting queue based on each of the target graphics, send a third instruction to the graphic allocation module to allocate a target number of the target graphics to different computing nodes according to the queue sequence number of each of the target graphics in the reset test waiting queue, and adjust the optical proximity correction menu parameters used by each of the target graphics to reset menu parameters; Wherein, each of the computing nodes is further configured to: perform the optical proximity correction calculation according to the reset menu parameters.

10. The optical proximity correction system according to claim 8 or 9, characterized in that: The graphics processing unit is further configured to: obtain a mask design layout; The graphic correction unit is further configured to: perform optical proximity correction on the mask design layout according to the target menu parameters to obtain a mask layout.

Images