Wafer heating device

Abstract

According to the wafer heating device provided by the invention, the first gas channel and the second gas channel are arranged in the heating disc, and the third gas channel and the fourth gas channel are arranged on the top cover, so that the space of the heating disc is saved, a sealing ring is conveniently arranged between the heating disc and the top cover, and the sealing performance is improved; by improving the morphology of gas inlets and gas outlets of the third gas channel and the fourth gas channel, the gas inlet stability and the flexibility of the gas injection direction can be improved; gas flows in the first gas channel and the second gas channel in the heating plate, passes through the third gas channel and the fourth gas channel in the top cover and then is ejected from the gas outlet in the top cover, so that the heating time of the gas can be prolonged, and the temperature uniformity of the ejected gas is improved; when the wafer is rotationally heated above the top cover, the temperature uniformity of the wafer in the radial direction can be further improved; and the temperature of the heating disc and / or the heater can be controlled by arranging a temperature sensor.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor equipment and relates to a wafer heating device. Background Art

[0002] In the semiconductor chip manufacturing process, many processes need to be carried out under certain temperature conditions, such as wafer edge cleaning, wafer back cleaning, degumming, etc. These processes require the use of chemical liquids. In order to optimize the physical and chemical properties of the chemical liquids or optimize the chemical reaction speed, a heating device is usually installed in the process chamber to heat the chemical liquid on the wafer surface to achieve an optimal temperature.

[0003] Existing heating methods for wafer heating devices include infrared radiation heating, baking heating, fluid heat conduction heating, etc. With the development of technology, the size of wafers is getting larger and larger. Therefore, how to control the consistency of temperature at various locations on the wafer surface has become a problem that needs to be solved.

[0004] Therefore, it is necessary to provide a wafer heating device. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a wafer heating device for solving the problem in the prior art that it is difficult to achieve temperature consistency at various locations on the wafer.

[0006] To achieve the above object, the present invention provides a wafer heating device, the wafer heating device comprising:

[0007] A heating plate, wherein a first gas channel and a second gas channel which are not connected to each other are provided in the heating plate, and a gas inlet and a gas outlet are provided on the first gas channel and the second gas channel;

[0008] A top cover, the top cover is fixed on the heating plate, a third gas channel and a fourth gas channel which are not connected to each other are provided in the top cover, a gas inlet and a gas outlet which penetrates the top cover are provided on the third gas channel and the fourth gas channel, and at least one of the third gas channel and the fourth gas channel is connected to the first gas channel, and the other is connected to at least the second gas channel;

[0009] During operation, the first gas enters from the gas inlet of the first gas channel and is ejected through the gas outlet of the corresponding gas channel in the top cover; the second gas enters from the gas inlet of the second gas channel and is ejected through the gas outlet of the corresponding gas channel in the top cover.

[0010] Optionally, the first gas channel and the second gas channel are arranged in a serpentine shape.

[0011] Optionally, a straight line passing through the center of the heating plate is used as a dividing line, and the first gas channel and the second gas channel are respectively located on both sides of the dividing line.

[0012] Optionally, the third gas channel and the fourth gas channel are distributed in concentric circles around the center of the top cover, with one close to the center of the top cover and the other close to the outer edge of the top cover.

[0013] Optionally, the third gas channel and the fourth gas channel are distributed in concentric circles around the center of the top cover, and the gas outlets of the third gas channel are distributed at equal intervals, and the gas outlets of the fourth gas channel are distributed at equal intervals.

[0014] Optionally, the gas inlet of the first gas channel is located at the head of the first gas channel, the gas outlet of the first gas channel is located at the tail of the first gas channel, and N≥1 gas outlets are provided, and the gas inlet of the second gas channel is located at the head of the second gas channel, the gas outlet of the second gas channel is located at the tail of the second gas channel, and M≥1 gas outlets are provided.

[0015] Optionally, the N gas outlets in the first gas channel are connected one-to-one with the gas inlets in the third gas channel and / or the fourth gas channel; the M gas outlets in the second gas channel are connected one-to-one with the gas inlets in the third gas channel and / or the fourth gas channel.

[0016] Optionally, when N≥2, the N gas outlets in the first gas channel are axially symmetrical and / or evenly spaced along a center line passing through the heating plate, and when M≥2, the M gas outlets in the second gas channel are axially symmetrical and / or evenly spaced along a center line passing through the heating plate.

[0017] Optionally, the heating plate and the top cover comprise an integrally formed structure or a combined structure assembled by fixings. When the heating plate and the top cover are a combined structure, a sealing ring is arranged between the heating plate and the top cover, and the sealing ring comprises one or a combination of a fixing sealing ring in contact with the fixing member and an edge sealing ring located at the contact edge of the heating plate and the top cover.

[0018] Optionally, the cross-sectional areas of the gas inlets of the third gas channel and the fourth gas channel are larger than the cross-sectional areas of the third gas channel and / or the fourth gas channel connected thereto.

[0019] Optionally, the gas outlets of the third gas channel and the fourth gas channel include vertical gas outlets and / or inclined gas outlets.

[0020] Optionally, a heater is further included below the heating plate, and a temperature sensor is provided on the heater and / or the heating plate.

[0021] As described above, in the wafer heating device of the present invention, a first gas channel and a second gas channel are arranged in the heating plate, and a third gas channel and a fourth gas channel are arranged on the top cover, which is beneficial to saving space of the heating plate and is convenient for arranging a sealing ring between the heating plate and the top cover to improve the sealing performance; by improving the morphology of the gas inlet and the gas outlet of the third gas channel and the fourth gas channel, the air intake stability and the flexibility of the jet direction can be improved; the gas flows in the first gas channel and the second gas channel in the heating plate, and after passing through the third gas channel and the fourth gas channel in the top cover, it is ejected from the gas outlet in the top cover, which can extend the heating time of the gas and improve the temperature uniformity of the ejected gas; when the wafer is rotated and heated above the top cover, the temperature uniformity of the wafer in the radial direction can be further improved; the temperature of the heating plate and / or the heater can also be controlled by arranging a temperature sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Shown is an exploded view of a wafer heating device in an embodiment of the present invention.

[0023] Figure 2 Display as Figure 1 Schematic diagram of the structure of the top cover viewed from above.

[0024] Figure 3 Display as Figure 1 A schematic diagram of the top view of the heating plate with a sealing ring.

[0025] Figure 4a to Figure 4d Display as Figure 1 Schematic diagram of the top view of the corresponding four heating plates with different morphologies.

[0026] Figure 5 Display as Figure 1 Schematic diagram of the structure of the heating plate viewed from above.

[0027] Figure 6 Display as Figure 1 Schematic diagram of the bottom view of the heater.

[0028] Figure 7 Display as Figure 1 Schematic diagram of the top view structure of the insulation board.

[0029] Component number description

[0030] 100 Top cover

[0031] 110 Third gas channel

[0032] 111 Gas inlet of the third gas channel

[0033] 112 Gas outlet of the third gas channel

[0034] 120 Fourth Gas Channel

[0035] 121 Gas inlet of fourth gas channel

[0036] 122 Gas outlet of fourth gas channel

[0037] 200 Heating Plate

[0038] 210 First gas channel

[0039] 211 Gas inlet of the first gas channel

[0040] 212 Gas outlet of the first gas channel

[0041] 220 Second gas channel

[0042] 221 Gas inlet of the second gas channel

[0043] 222 Gas outlet of the second gas channel

[0044] 230 Seal

[0045] 240 First temperature sensor

[0046] 300 Heater

[0047] 310 Power Cord

[0048] 320 Second temperature sensor

[0049] 400 Insulation Board DETAILED DESCRIPTION

[0050] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0051] See also Figure 1 to Figure 7 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0052] like Figure 1 and Figure 7 This embodiment provides a wafer heating device, which includes a top cover 100 and a heating plate 200, wherein Figure 2 and Figure 3 , the heating plate 200 is provided with a first gas channel 210 and a second gas channel 220 which are not connected to each other, and the first gas channel 210 and the second gas channel 220 are both provided with a gas inlet and a gas outlet; the top cover 100 is fixed on the heating plate 200, and the top cover 100 is provided with a third gas channel 110 and a fourth gas channel 120 which are not connected to each other, and the third gas channel 110 and the fourth gas channel 120 are both provided with a gas inlet and a gas outlet running through the top cover 100, and one of the third gas channel 110 and the fourth gas channel 120 is at least connected to the first gas channel 210, and the other is at least connected to the second gas channel 220; when working, the first gas enters from the gas inlet of the first gas channel 210 and is ejected through the gas outlet of the corresponding gas channel in the top cover 100; the second gas enters from the gas inlet of the second gas channel 220 and is ejected through the gas outlet of the corresponding gas channel in the top cover 100.

[0053] See also Figure 1 , Figure 5 and Figure 6 In this embodiment, a heater 300 for providing a heat source and a heat insulation plate 400 for isolating heat are provided under the heating plate 200, wherein a power cord 310 is provided on the heating plate 200, and a heat source is provided through the power cord 310. The types of the heater 300 and the heat insulation plate 400 are not limited here and can be set as needed.

[0054] See also Figure 1 In this embodiment, the heating plate 200 and the top cover 100 are both in the shape of a ring, so as to provide a storage space for a wafer support mechanism (not shown) at the center of the ring, wherein the wafer support mechanism is preferably a rotary wafer support mechanism, so as to drive the wafer located above it to rotate above the top cover 100, so as to improve the uniformity of heating of the wafer in the radial direction, wherein the rotary wafer support mechanism can adopt a rotary vacuum suction cup or a rotary air flotation platform, etc., and the specific type of the wafer support mechanism is not limited here. Of course, the heating plate 200 and the top cover 100 can also be circular or other shapes as needed, and no excessive limitation is made here.

[0055] See also Figure 1 and Figure 2The third gas channel 110 and the fourth gas channel 120 in the top cover 100 are both circular, and the third gas channel 110 is located near the center of the top cover 100, and the fourth gas channel 120 is located near the outer edge of the top cover 100. The specific shapes and distribution positions of the third gas channel 110 and the fourth gas channel 120 are not limited to this. For example, the shapes of the third gas channel 110 and the fourth gas channel 120 can also be elliptical, square, etc., and no excessive restrictions are made here.

[0056] The third gas channel 110 has 2 gas inlets 111 and 18 gas outlets 112, and the fourth gas channel 120 has 2 gas inlets 121 and 18 gas outlets 122, and preferably the gas outlets 112 are evenly spaced and the gas outlets 122 are evenly spaced. The number, distribution, size, etc. of the gas inlets and gas outlets of the third gas channel 110 and the fourth gas channel 120 are not excessively restricted and can be set as needed. The number of gas inlets of the third gas channel 110 and the fourth gas channel 120 must correspond to the number of gas outlets in the first gas channel 210 and / or the second gas channel 220 to which they are connected, so as to facilitate one-to-one connection.

[0057] See also Figure 3 In this embodiment, a first gas channel 210 and a second gas channel 220 that are not connected to each other are provided in the heating plate 200, wherein the first gas channel 210 is provided with a gas inlet 211 and two gas outlets 212, and the gas inlet 211 is located at the head of the first gas channel 210, and the gas outlet 212 is located at the tail of the first gas channel 210, and preferably the two gas outlets 212 are axially symmetrically distributed along a center line passing through the heating plate 200, so as to accelerate the flow of gas in the gas channel in the top cover 100 after subsequent connection with the gas channel in the top cover 100, and improve the uniformity of the temperature of the gas ejected from the top cover 100; similarly, the second gas channel 220 is provided with a gas inlet 221 and two gas outlets 222, and the gas inlet 221 is located at the head of the second gas channel 220, and the gas outlet 222 is located at the tail of the second gas channel 220, and preferably the two gas outlets 222 are axially symmetrically distributed along a center line passing through the heating plate 200.

[0058] Among them, the number of gas outlets of the first gas channel 210 may include N≥1, such as 1, 2, 3, 4, 5, etc., and the number of gas outlets of the second gas channel 220 may include M≥1, such as 1, 2, 3, 4, 5, etc., and the specific values ​​of N and M can be set as needed.

[0059] In this embodiment, only N and M are both 2 as an example, and the corresponding third gas channel 110 has two gas inlets 111 and the fourth gas channel 120 has two gas inlets 121, but the values ​​of N and M are not limited to this. When the values ​​of N and M are 2 or more, it is preferred that the gas outlets are distributed in a circular shape at the tail of the corresponding gas channel, and are axially symmetrical and / or evenly spaced along a center line passing through the heating plate 200, so that after the N gas outlets in the first gas channel 210 are connected to the gas inlets in the third gas channel 110 and / or the fourth gas channel 120 in a one-to-one correspondence, and the M gas outlets in the second gas channel 220 are connected to the gas inlets in the third gas channel 110 and / or the fourth gas channel 120 in a one-to-one correspondence, the uniformity of gas distribution in the gas channel in the top cover 100 can be further improved, thereby providing a more uniform ejected gas.

[0060] It can be understood that when N and M are axially symmetrically distributed along a center line passing through the heating plate 200, the gas inlet in the corresponding third gas channel 110 is axially symmetrically distributed along a center line passing through the top cover 100, and the gas inlet in the fourth gas channel 120 is axially symmetrically distributed along a center line passing through the top cover 100. Further, when the gas outlets 212 and 222 are equidistantly distributed, the corresponding gas inlets of the third gas channel 110 and the fourth gas channel 120 are also equidistantly distributed.

[0061] In this embodiment, refer to Figure 4a The first gas channel 210 is provided with two gas outlets 212 at its tail, and the two gas outlets 212 are both located on the inner circle near the center of the heating plate 200, and the first gas channel 210 is connected to the third gas channel 110 located on the inner circle of the top cover 100; the second gas channel 220 is provided with two gas outlets 222 at its tail, and the two gas outlets 222 are both located on the outer circle near the outer edge of the heating plate 200, and the second gas channel 220 is connected to the fourth gas channel 120 located on the outer circle of the top cover 100. The first gas enters from the gas inlet 211 of the first gas channel 210, and flows from the outer edge position near the heating plate 200 to the center position near the heating plate 200, and the second gas enters from the gas inlet 221 of the second gas channel 220, and flows from the center position near the heating plate 200 to the outer edge position near the heating plate 200.

[0062] like Figure 4bIn another embodiment, one of the two gas outlets 212 provided at the tail of the first gas channel 210 is located on the inner circle near the center of the heating plate 200 and communicates with the third gas channel 110 located at the inner circle of the top cover, and the other is located on the outer circle near the outer edge of the heating plate 200 and communicates with the fourth gas channel 120 located at the outer circle of the top cover 100. Similarly, one of the two gas outlets 222 provided at the tail of the second gas channel 220 is located on the inner circle near the center of the heating plate 200 and communicates with the third gas channel 110 located at the inner circle of the top cover 100, and the other is located on the outer circle near the outer edge of the heating plate 200 and communicates with the fourth gas channel 120 located at the outer circle of the top cover 100. The first gas enters from the gas inlet 211 of the first gas channel 210, and flows from the outer edge position near the heating plate 200 to the center position near the heating plate 200. The second gas enters from the gas inlet 221 of the second gas channel 220, and flows from the center position near the heating plate 200 to the outer edge position near the heating plate 200.

[0063] like Figure 4c In another embodiment, one of the two gas outlets 212 provided at the tail of the first gas channel 210 is located on the inner circle near the center of the heating plate 200 and communicates with the third gas channel 110 located at the inner circle of the top cover 100, and the other is located on the outer circle near the outer edge of the heating plate 200 and communicates with the fourth gas channel 120 located at the outer circle of the top cover 100. Similarly, one of the two gas outlets 222 provided at the tail of the second gas channel 220 is located on the inner circle near the center of the heating plate 200 and communicates with the third gas channel 110 located at the inner circle of the top cover 100, and the other is located on the outer circle near the outer edge of the heating plate 200 and communicates with the fourth gas channel 120 located at the outer circle of the top cover 100. The first gas enters from the gas inlet 211 of the first gas channel 210, and flows from the center position near the heating plate 200 to the outer edge position near the heating plate 200. The second gas enters from the gas inlet 221 of the second gas channel 220, and flows from the outer edge position near the heating plate 200 to the center position near the heating plate 200.

[0064] like Figure 4dIn another embodiment, the first gas channel 210 is provided with two gas outlets 212 at its tail, and the two gas outlets 212 are both located on the outer circle near the outer edge of the heating plate 200 and communicated with the fourth gas channel 120 located on the outer circle of the top cover 100; the second gas channel 220 is provided with two gas outlets 222 at its tail, and the two gas outlets 222 are both located on the inner circle near the center of the heating plate 200 and communicated with the third gas channel 110 located on the inner circle of the top cover 100. The first gas enters from the gas inlet 211 of the first gas channel 210 and flows from the center position of the heating plate 200 to the outer edge position of the heating plate 200, and the second gas enters from the gas inlet 221 of the second gas channel 220 and flows from the outer edge position of the heating plate 200 to the center position of the heating plate 200.

[0065] The connection method of the first gas channel 210, the second gas channel 220, the third gas channel 110, and the fourth gas channel 120 and the flow direction of the first gas path and the second gas path are not limited thereto and can be freely combined as needed without excessive restrictions herein.

[0066] See also Figure 4a to Figure 4d In this embodiment, the first gas channel 210 and the second gas channel 220 are arranged in a serpentine shape, and the first gas channel 210 and the second gas channel 220 are preferably separated by a straight line passing through the center of the heating plate 200, and the first gas channel 210 and the second gas channel 220 are respectively located on both sides of the dividing line. The specific morphology and distribution of the first gas channel 210 and the second gas channel 220 are not excessively restricted here. It is preferred that the first gas channel 210 and the second gas channel 220 adopt different rotation directions so that the gas channels are densely arranged in the heating plate 200.

[0067] In this embodiment, the heating plate 200 and the top cover 100 are a combined structure assembled by fixing parts (not shown), such as bolts, etc., but it is not limited to this. In another embodiment, the heating plate 200 and the top cover 100 may also adopt an integral molding structure.

[0068] like Figure 3 When the heating plate 200 and the top cover 100 are a combined structure, a sealing ring 230 is further arranged between the heating plate 200 and the top cover 100. The sealing ring 230 may include one or a combination of a fixing sealing ring in contact with the fixing member and an edge sealing ring located at the contact edge of the heating plate 200 and the top cover 100. There is no excessive restriction on the type and setting of the sealing ring 230.

[0069] Among them, since the first gas channel 210 and the second gas channel 220 are located in the heating plate 200, and the third gas channel 110 and the fourth gas channel 120 are located in the top cover 100, the separate arrangement of the gas channels is beneficial to saving space in the heating plate 200 without shortening the length of the gas channels, thereby providing space for the arrangement of the sealing ring 230 to enhance the sealing and avoid gas leakage.

[0070] See also Figure 2 In this embodiment, the cross-sectional area of ​​the gas inlets 111, 121 of the third gas channel 110 and the fourth gas channel 120 is preferably larger than the cross-sectional area of ​​the third gas channel 110 and / or the fourth gas channel 120 connected thereto, that is, the depth and / or width at the gas inlets 111, 121 is larger than the space of the third gas channel 110 and / or the fourth gas channel 120 connected thereto, thereby making the air intake more stable.

[0071] The gas outlets 112 and 122 corresponding to the third gas channel 110 and the fourth gas channel 120 may include vertical gas outlets and / or inclined gas outlets to improve the direction of the gas outlets as needed so that the ejected gas can increase the temperature of the wafer edge as much as possible.

[0072] See also Figure 5 and Figure 6 The heater 300 and / or the heating plate 200 may also be provided with a temperature sensor, such as a first temperature sensor 240 in contact with the heating plate 200 and a second temperature sensor 320 in contact with the heater 300, so as to adjust and control the temperature of the heating plate 200 through the first temperature sensor 240 connected to the controller (not shown), and to adjust and control the temperature of the heater 300 through the second temperature sensor 320 connected to the controller (not shown). For example, after the first temperature sensor 240 is provided on the heating plate 200, the temperature of the heating plate 200 can be obtained in time to be fed back to the heater 300, and the temperature of the heating plate 200 can be adjusted by adjusting the temperature of the heater 300; after the second temperature sensor 320 is provided on the heater 300, the temperature of the heater 300 can be obtained in time to control and limit the heating temperature of the heater 300 to prevent damage to the equipment parts caused by excessive heating temperature. Of course, the temperature of the heater 300 can also be obtained to control the heating temperature of the heating plate 200. There are no restrictions on the types and connection methods of temperature sensors and controllers, and they can be selected according to needs.

[0073] In summary, the wafer heating device of the present invention sets the first gas channel and the second gas channel in the heating plate, and sets the third gas channel and the fourth gas channel on the top cover, which is beneficial to saving space of the heating plate and convenient for setting a sealing ring between the heating plate and the top cover to improve the sealing; by improving the morphology of the gas inlet and the gas outlet of the third gas channel and the fourth gas channel, the intake stability and the flexibility of the jet direction can be improved; the gas flows in the first gas channel and the second gas channel in the heating plate, and after passing through the third gas channel and the fourth gas channel in the top cover, it is ejected from the gas outlet in the top cover, which can extend the heating time of the gas and improve the temperature uniformity of the ejected gas; when the wafer is rotated and heated above the top cover, the temperature uniformity of the wafer in the radial direction can be further improved; the temperature of the heating plate and / or the heater can also be controlled by setting a temperature sensor.

[0074] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A wafer heating device, characterized in that: The wafer heating device comprises: A heating plate, wherein a first gas channel and a second gas channel which are not connected to each other are provided in the heating plate, and a gas inlet and a gas outlet are provided on the first gas channel and the second gas channel; A top cover, the top cover is fixed on the heating plate, a third gas channel and a fourth gas channel which are not connected to each other are provided in the top cover, a gas inlet and a gas outlet which penetrates the top cover are provided on the third gas channel and the fourth gas channel, and at least one of the third gas channel and the fourth gas channel is connected to the first gas channel, and the other is connected to at least the second gas channel; During operation, the first gas enters from the gas inlet of the first gas channel and is ejected through the gas outlet of the corresponding gas channel in the top cover; the second gas enters from the gas inlet of the second gas channel and is ejected through the gas outlet of the corresponding gas channel in the top cover.

2. The wafer heating device according to claim 1, characterized in that: The first gas channel and the second gas channel are both arranged in a serpentine shape.

3. The wafer heating device according to claim 1, characterized in that: A straight line passing through the center of the heating plate is used as a dividing line, and the first gas channel and the second gas channel are respectively located on both sides of the dividing line.

4. The wafer heating device according to claim 1, characterized in that: The third gas channel and the fourth gas channel are distributed in concentric circles around the center of the top cover, with one close to the center of the top cover and the other close to the outer edge of the top cover.

5. The wafer heating device according to claim 1, characterized in that: The third gas channel and the fourth gas channel are distributed in concentric circles around the center of the top cover, and the gas outlets of the third gas channel are distributed at equal intervals, and the gas outlets of the fourth gas channel are distributed at equal intervals.

6. The wafer heating device according to claim 1, characterized in that: The gas inlet of the first gas channel is located at the head of the first gas channel, the gas outlet of the first gas channel is located at the tail of the first gas channel, and N≥1 gas outlets are provided, and the gas inlet of the second gas channel is located at the head of the second gas channel, the gas outlet of the second gas channel is located at the tail of the second gas channel, and M≥1 gas outlets are provided.

7. The wafer heating device according to claim 6, characterized in that: The N gas outlets in the first gas channel are connected one-to-one with the gas inlets in the third gas channel and / or the fourth gas channel; the M gas outlets in the second gas channel are connected one-to-one with the gas inlets in the third gas channel and / or the fourth gas channel.

8. The wafer heating device according to claim 6, characterized in that: When N≥2, the N gas outlets in the first gas channel are axially symmetrical and / or evenly spaced along a center line passing through the heating plate, and when M≥2, the M gas outlets in the second gas channel are axially symmetrical and / or evenly spaced along a center line passing through the heating plate.

9. The wafer heating device according to claim 1, characterized in that: The heating plate and the top cover include an integrally formed structure or a combined structure assembled by fixings. When the heating plate and the top cover are a combined structure, a sealing ring is provided between the heating plate and the top cover, and the sealing ring includes one or a combination of a fixing sealing ring in contact with the fixing and an edge sealing ring located at the contact edge of the heating plate and the top cover.

10. The wafer heating device according to claim 1, characterized in that: The cross-sectional areas of the gas inlets of the third gas channel and the fourth gas channel are larger than the cross-sectional areas of the third gas channel and / or the fourth gas channel communicating therewith.

11. The wafer heating device according to claim 1, characterized in that: The gas outlets of the third gas channel and the fourth gas channel include vertical gas outlets and / or inclined gas outlets.

12. The wafer heating device according to claim 1, characterized in that: It also includes a heater located below the heating plate, and a temperature sensor is provided on the heater and / or the heating plate.

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