Optoelectronic component module and manufacturing method thereof

Abstract

The invention provides an optoelectronic component module and a manufacturing method thereof. The photoelectric assembly module comprises a circuit module and a photoelectric conversion module. The circuit module includes a first electrode. The photoelectric conversion module is arranged on the circuit module, wherein the photoelectric conversion module comprises a second electrode, a light active layer, a light-transmitting electrode and a light-transmitting substrate. The second electrode is electrically connected with the first electrode. The photoactive layer is disposed on the second electrode. The light-transmitting electrode is disposed on the photoactive layer. The light-transmitting substrate is arranged on the light-transmitting electrode. The photoelectric component module can have excellent photoelectric characteristics such as high current density, high external quantum efficiency and high detection degree.

Description

Technical Field

[0001] The present invention relates to a photovoltaic component module and a manufacturing method thereof. Background Art

[0002] Matrix optoelectronic component modules have various applications. For example, active-matrix organic light-emitting diode (AMOLED) is the current mainstream display technology, which is mainly composed of light-emitting components and driving circuits. Similar applications can also be used for sensor purposes, such as changing the driving circuit to a readout circuit (ROIC), and then combining the ROIC with a photosensitive diode to form an image sensor, such as a CMOS image sensor, a fingerprint scanner, or a digital X-ray imaging device.

[0003] In order to improve the performance of photodiodes (e.g., photoelectric conversion efficiency, sensitivity, emission wavelength range and / or light-sensitive wavelength range) and reduce the cost of photodiodes, many new materials that can be applied to photodiodes have been developed. However, these materials may not be directly applied to the current silicon-based image sensor manufacturing. For example, the high temperature of the process or the physical impact during vacuum coating may damage the properties of these materials. Summary of the invention

[0004] The present invention provides a photoelectric component module, which includes a circuit module and a photoelectric conversion module. The circuit module includes a first electrode. The photoelectric conversion module is arranged on the circuit module, wherein the photoelectric conversion module includes a second electrode, a photoactive layer, a light-transmitting electrode and a light-transmitting substrate. The second electrode is electrically connected to the first electrode. The photoactive layer is arranged on the second electrode. The light-transmitting electrode is arranged on the photoactive layer. The light-transmitting substrate is arranged on the light-transmitting electrode.

[0005] In some embodiments, the first electrode directly contacts the second electrode.

[0006] In some embodiments, the first electrode and the second electrode form an ohmic junction.

[0007] In some embodiments, the light-transmissive substrate allows visible light, near-infrared light, or short-wave infrared (SWIR) light to pass through.

[0008] In some embodiments, the material of the light-transmitting substrate includes polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), silicon (Si), or a combination thereof.

[0009] In some embodiments, the optoelectronic component module further includes an optical functional layer, wherein the optical functional layer is disposed on the light-transmitting substrate or between the light-transmitting electrode and the light-transmitting substrate.

[0010] In some embodiments, the optoelectronic component module further includes a conductive block, wherein the first electrode is electrically connected to the second electrode through the conductive block.

[0011] In some embodiments, the optoelectronic component module further includes a first carrier transport layer disposed between the light-transmitting electrode and the photoactive layer, and a second carrier transport layer disposed between the photoactive layer and the second electrode.

[0012] In some embodiments, the second electrode covers the lower surface and side surfaces of the second carrier transport layer, side surfaces of the photoactive layer, and side surfaces of the first carrier transport layer.

[0013] In some embodiments, the circuit module further includes a third electrode, and the third electrode is electrically connected to the light-transmitting electrode through a conductive block.

[0014] In some embodiments, the optoelectronic component module further includes a sealant, wherein the sealant is disposed between an edge of the optoelectronic conversion module and an edge of the circuit module, and the sealant, the optoelectronic conversion module, and the circuit module surround the sealed chamber.

[0015] In some embodiments, the photoactive layer includes an organic semiconductor, an inorganic semiconductor, quantum dots, a perovskite, or a combination thereof.

[0016] The present invention provides a method for manufacturing an optoelectronic component module, which includes the following operations: receiving a circuit module, wherein the circuit module includes a first electrode; forming a photoelectric conversion module, which includes: forming a light-transmitting electrode on a light-transmitting substrate, forming a photoactive layer on the light-transmitting electrode, and forming a second electrode on the photoactive layer; and joining the circuit module and the optoelectronic conversion module so that the second electrode is electrically connected to the first electrode.

[0017] In some embodiments, the bonding of the circuit module and the photoelectric conversion module is performed by laminating, bonding or welding.

[0018] In some embodiments, the method further includes: before forming the light-transmitting electrode on the light-transmitting substrate, forming an optical functional layer to cover the upper surface of the light-transmitting substrate.

[0019] In some embodiments, the method further includes: before or after forming the light-transmitting electrode on the light-transmitting substrate, forming an optical functional layer to cover the lower surface of the light-transmitting substrate.

[0020] In some embodiments, the method further includes: disposing a sealant between an edge of the photoelectric conversion module and an edge of the circuit module to form a closed chamber surrounded by the sealant, the photoelectric conversion module and the circuit module.

[0021] In some embodiments, the method further includes: forming a first carrier transport layer on the light-transmitting electrode before forming the photoactive layer on the light-transmitting electrode; and forming a second carrier transport layer on the photoactive layer before forming the second electrode on the photoactive layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] A more complete understanding of the present invention may be obtained by reading the following detailed description of the embodiments and referring to the accompanying drawings.

[0023] Figure 1 is a flow chart of a method for manufacturing an optoelectronic component module according to various embodiments of the present disclosure.

[0024] FIG. 2A to FIG. 2D is a cross-sectional schematic diagram of an intermediate stage of manufacturing a photovoltaic component module according to various embodiments of the present disclosure.

[0025] FIG. 3A to FIG. 3B is a cross-sectional schematic diagram of an intermediate stage of manufacturing a photovoltaic component module according to various embodiments of the present disclosure.

[0026] FIG. 4A to FIG. 4B is a cross-sectional schematic diagram of an intermediate stage of manufacturing a photovoltaic component module according to various embodiments of the present invention.

[0027] Figure 5A FIG. 4 is a cross-sectional schematic diagram of an optoelectronic component module according to various embodiments of the present invention.

[0028] Figure 5B is formed Figure 5A Schematic cross-sectional view of a photoelectric conversion module.

[0029] Figure 6 It is a cross-sectional schematic diagram of the optoelectronic component module of Example 1.

[0030] Figure 7 3 is a schematic cross-sectional view of the photoelectric conversion module of Comparative Example 1.

[0031] Figure 82 is a schematic cross-sectional view of the photovoltaic component module of Comparative Example 2.

[0032] Fig. 9 It is the current density-voltage relationship diagram.

[0033] Fig.10 This is the external quantum efficiency-wavelength relationship graph.

[0034] Fig.11 This is a graph of detectability versus wavelength.

[0035] Explanation of symbols

[0036] 100: Method

[0037] 110, 120, 121, 122, 123, 124, 125, 130, 140: Operation

[0038] 200, 200', 300, 400, 500, 600, 800: Photovoltaic component module

[0039] 200A, 500A, 600A, 800A: Circuit modules

[0040] 200B, 200B', 300B, 400B, 500B, 600B, 800B: Photoelectric conversion module

[0041] 210, 510: Circuit board

[0042] 220: first electrode

[0043] 230: Circuit

[0044] 240, 540: light-transmitting substrate

[0045] 250, 550: light-transmitting electrode

[0046] 260, 560: first carrier transport layer

[0047] 270, 570: Photoactive layer

[0048] 280, 580: second carrier transport layer

[0049] 290: Second electrode

[0050] 512:Substrate

[0051] 514: Insulation layer

[0052] 610: Silicon substrate

[0053] 620:Silver electrode

[0054] 640: Glass substrate

[0055] 650:ITO electrode

[0056] 652:IZO electrode

[0057] 660: Zinc oxide layer

[0058] 670: Photoactive layer

[0059] 680: Molybdenum trioxide layer

[0060] 690:Silver electrode

[0061] 700: Photoelectric conversion module

[0062] B1, B2: Conductive blocks

[0063] c1, c2, e1, C1, C2, E1, C1', C2', E1': curve

[0064] C: Closed chamber

[0065] ED1: First electrode

[0066] ED2: Second electrode

[0067] ED3: The third electrode

[0068] L1, L2, L3: light

[0069] OF1, OF2, OF3: Optical functional layers

[0070] S: Sealant

[0071] SW1, SW2, SW3: Side

[0072] US: Lower surface DETAILED DESCRIPTION

[0073] The following multiple embodiments are described and disclosed in detail with the accompanying drawings. For the purpose of clarity, many practical details will be described together in the following description. However, it should be understood that these practical details are not intended to limit the content of the present invention. That is, in some embodiments of the present invention, these practical details are not necessary. In addition, to simplify the drawings, some known structures and components will be schematically illustrated in the drawings. The present invention provides a photoelectric component module and a method for manufacturing the same. In the method for manufacturing the photoelectric component module, a photoelectric conversion module is first manufactured, and then the photoelectric conversion module and the circuit module are joined to form a photoelectric component module. Compared to the process of directly depositing multiple film layers of the photoelectric conversion module on the circuit module, the manufacturing method of the present invention can avoid the process of forming the photoelectric component module (such as the deposition process) affecting the material properties in the photoelectric conversion module. Therefore, the photoelectric component module of the present invention can have excellent photoelectric properties, such as high current density, high external quantum efficiency (EQE) and high detection.

[0074] Please also refer to Figure 1 and FIG. 2A to FIG. 2D . Figure 1 1 is a flow chart of a method 100 for manufacturing a photovoltaic component module according to various embodiments of the present disclosure. The method 100 includes operations 110, 120, 130, and 140. FIG. 2A to FIG. 2D 1 is a cross-sectional schematic diagram of an intermediate stage of manufacturing a photovoltaic component module according to various embodiments of the present invention. Although a series of operations or steps are used below to illustrate the method disclosed herein, the order in which these operations or steps are shown should not be interpreted as a limitation of the present invention. For example, certain operations or steps can be performed in a different order and / or simultaneously with other steps. In addition, not all of the operations, steps and / or features shown must be performed to implement the embodiments of the present invention. In addition, each operation or step described herein may include a number of sub-steps or actions.

[0075] In operation 110, Figure 2A As shown, a circuit module 200A including a first electrode 220 is received. In more detail, the circuit module 200A includes a circuit substrate 210, a first electrode 220, and a circuit 230. The first electrode 220 and the circuit 230 are embedded in the circuit substrate 210 and are electrically connected to each other. In some embodiments, the upper surface of the first electrode 220 is substantially aligned with the upper surface of the circuit substrate 210. In other embodiments, a portion of the first electrode 220 protrudes from the circuit substrate 210 (not shown).

[0076] Please continue to refer to Figure 2A. In some embodiments, the circuit substrate 210 is a silicon wafer substrate, a glass substrate, a polymer substrate or a ceramic substrate. In some embodiments, the material of the polymer substrate includes polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC) or a combination thereof. In some embodiments, the first electrode 220 and the circuit 230 each include a metal, an alloy, a metal nitride, a metal oxide, a conductive polymer, a conductive carbon or a combination thereof. In some embodiments, the first electrode 220 and the circuit 230 each include copper, silver, gold, aluminum, tungsten, molybdenum, titanium, titanium nitride, indium tin oxide (Indium tin oxide, ITO), indium zinc oxide (Indium zinc oxide, IZO), graphene, carbon nanotubes, poly (3,4-ethylenedioxythiophene): polystyrene sulfonate (poly (3,4-ethylenedioxythiophene) polystyrene sulfonate, PEDOT:PSS) or a combination thereof. The first electrode 220 includes, for example, nanosilver wires. In some embodiments, the first electrode 220 is a metal electrode.

[0077] In operation 120, as Figure 2B In more detail, operation 120 includes operation 121 , operation 122 , operation 123 , operation 124 , and operation 125 .

[0078] In operation 121, a transparent electrode 250 is formed on the transparent substrate 240. In some embodiments, the transparent substrate 240 and / or the transparent electrode 250 allow visible light, near infrared light and / or short wave infrared (SWIR) light to penetrate. In more detail, the transparent substrate 240 and / or the transparent electrode 250 can be penetrated by light with a wavelength of 360nm to 2500nm, such as 360, 400, 440, 480, 520, 560, 600, 640, 680, 720, 760, 800, 840, 880, 920, 960, 1000, 1500, 2000 or 2500nm. In some embodiments, the material of the transparent substrate 240 includes polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), silicon or a combination thereof. For example, the light-transmitting substrate 240 is a silicon wafer that can be penetrated by short-wave infrared light. More specifically, light with a wavelength of 1200nm to 2500nm can penetrate the silicon wafer. In some embodiments, the light-transmitting substrate 240 is a transparent substrate that allows visible light and near-infrared light to penetrate. In some embodiments, the material of the light-transmitting electrode 250 includes a transparent metal oxide, a transparent conductive polymer, a conductive carbon, a metal nanowire, or a combination thereof. For example, the material of the light-transmitting electrode 250 includes indium tin oxide (ITO), indium zinc oxide (IZO), PEDOT:PSS, graphene, carbon nanotubes, silver nanowires, or a combination thereof. In some embodiments, the light-transmitting electrode 250 is a transparent electrode that allows visible light, near-infrared light, and short-wave infrared light to penetrate. In some embodiments, when the light-transmitting electrode 250 includes a transparent metal oxide, the light-transmitting electrode 250 is deposited on the light-transmitting substrate 240 by sputtering or electron beam evaporation. In some embodiments, when the light-transmitting electrode 250 includes a transparent conductive polymer, conductive carbon, metal nanowires, or a combination thereof, the light-transmitting electrode 250 can be formed on the light-transmitting substrate 240 by coating or printing.

[0079] In operation 122, a first carrier transport layer 260 is formed on the light-transmitting electrode 250. In operation 123, a photoactive layer 270 is formed on the first carrier transport layer 260. The photoactive layer 270 can be used for photoelectric conversion and photoelectric conduction. In some embodiments, the photoactive layer 270 includes an organic semiconductor, an inorganic semiconductor, a quantum dot, a perovskite, or a combination thereof. In some embodiments, the quantum dot includes CdSe, CdZnS, CdSeS, CdS, ZnSe, InP, InS, CdTe, CuInS2, CuInZnS, ZnS, PbS, PbSe, AgInS2, Ag2Te, InAs, Cd3As2, AgBiS2, In(As,P), InGaP, or a combination thereof. In some embodiments, the perovskite has the following general formula: ABX3, wherein A is an organic cation, B is a metal cation, and X is a halogen anion. In some embodiments, the perovskite includes CH3NH3PbI3, CH3NH3PbBr3, (MeNH3)PbBr3, Cs2Sn3I6, Ag3BiI6, (CH3NH3)3Bi2Cl9, Cs2SnI5Br, Cs2TiBr6, or a combination thereof.

[0080] In some embodiments, the organic semiconductor includes one or more P-type organic semiconductors and one or more N-type organic semiconductors. For example, the P-type organic semiconductor includes:

[0081]

[0082]

[0083]

[0084]

[0085] In the above-mentioned P-type organic semiconductor, n, d1, d2, d3, d4, d 21n d 24n d 26n and 27n Each is independently a positive integer from 1 to 1000. 5m d 5n d 6m d 6n d 7m d 7n d 8m d 8n d 9m d 9n d 10m d 10n d11m d 11n d 12m d 12n d 13m d 13n d 14m d 14n d 15m d 15n d 16m d 16n d 17m d 17n d 18m d 18n d 19m d 19n d 20m d 20n d 22m d 22n d 23m d 23n d 25m d 25n d 28m d 28n d 29m and 29n Each represents a molar fraction, and each is greater than 0 and less than 1. 5m and 5n The sum of is 1. 6m and 6n The sum of is 1. 7m and 7n The sum of is 1. 8m and 8n The sum of is 1. 9m and 9n The sum of is 1. 10m and 10n The sum of is 1. 11m and 11n The sum of is 1. 12m and 12n The sum of is 1. 13m and 13n The sum of is 1. 14m and 14n The sum of is 1. 15m and 15n The sum of is 1. 16m and 16n The sum of is 1. 17m and 17n The sum of is 1. 18m and 18n The sum of is 1. 19m and 19n The sum of is 1.20m and 20n The sum of is 1. 22m and 22n The sum of is 1. 23m and 23n The sum of is 1. 25m and 25n The sum of is 1. 28m and 28n The sum of is 1. 29m and 29n The sum of is 1. For example, N-type organic semiconductors include: (R is ),

[0086] (R is ethylhexyl), (R is hexyldecyl), (R is hexyldecyl), (R is decyltetradecyl), (R is ),

[0087] or a combination thereof.

[0088] In operation 124, a second carrier transport layer 280 is formed on the photoactive layer 270. The first carrier transport layer 260 and the second carrier transport layer 280 are made of different materials. In some embodiments, one of the first carrier transport layer 260 and the second carrier transport layer 280 is an electron transport layer and the other is a hole transport layer. For example, the first carrier transport layer 260 is an electron transport layer and the second carrier transport layer 280 is a hole transport layer. For example, the first carrier transport layer 260 is a hole transport layer and the second carrier transport layer 280 is an electron transport layer. In some embodiments, the electron transport layer includes aluminum-doped zinc oxide, zinc oxide, titanium oxide (such as titanium dioxide), tin oxide (such as tin dioxide), polyelectrolyte, or a combination thereof. In some embodiments, the hole transport layer includes molybdenum trioxide (MoO3), nickel monoxide (NiO), tungsten trioxide (WO3), PEDOT:PSS, or a combination thereof.

[0089] In operation 125, a second electrode 290 is formed on the second carrier transport layer 280, thereby forming a photoelectric conversion module 200B. The photoelectric conversion module 200B includes a transparent substrate 240, a transparent electrode 250, a first carrier transport layer 260, a photoactive layer 270, a second carrier transport layer 280, and a second electrode 290 stacked in sequence. In some embodiments, the second electrode 290 includes a metal, an alloy, a metal nitride, a metal oxide, a conductive polymer, a conductive carbon, or a combination thereof. In some embodiments, the second electrode 290 includes copper, silver, gold, aluminum, tungsten, molybdenum, titanium, titanium nitride, indium tin oxide (ITO), indium zinc oxide (IZO), graphene, carbon nanotubes, poly (3,4-ethylenedioxythiophene): polystyrene sulfonic acid (PEDOT:PSS) or a combination thereof. The second electrode 290 includes, for example, a silver nanowire. In some embodiments, the second electrode 290 is a metal electrode.

[0090] Please refer again Figure 1 and Figure 2B In other embodiments, operation 122 is omitted, and thus, during the process of manufacturing the photoelectric conversion module 200B, the photoactive layer 270 is formed on the light-transmitting electrode 250. In some embodiments, the photoactive layer 270 directly contacts the light-transmitting electrode 250. In other embodiments, operation 124 is omitted, and thus, during the process of manufacturing the photoelectric conversion module 200B, the second electrode 290 is formed on the photoactive layer 270. In some embodiments, the second electrode 290 directly contacts the photoactive layer 270.

[0091] In operation 130, as Figure 2C As shown, the circuit module 200A and the photoelectric conversion module 200B are bonded so that the second electrode 290 is electrically connected to the first electrode 220, thereby forming the photoelectric component module 200. In more detail, the first electrode 220 directly contacts the second electrode 290. In some embodiments, the first electrode 220 and the second electrode 290 form an ohmic junction. The circuit module 200A and the photoelectric conversion module 200B can be connected to each other by chemical bonding or physical bonding. In some embodiments, bonding the circuit module 200A and the photoelectric conversion module 200B is performed by laminating, bonding or welding. For example, the circuit module 200A and the photoelectric conversion module 200B can be welded to each other through a conductive block (not shown). For example, the circuit module 200A and the photoelectric conversion module 200B can be bonded or welded by a conductive paste (e.g., silver paste). For example, the circuit module 200A and the photoelectric conversion module 200B can be bonded or welded by a conductive paste (e.g., silver paste). For example, the circuit module 200A and the photoelectric conversion module 200B can be bonded to each other by solid welding (e.g., cold welding). The first electrode 220 can receive a signal generated by the photoelectric conversion module 200B or transmit a signal to the photoelectric conversion module 200B. Figure 2CAs shown, the transparent substrate 240 can be used as a part of the packaging structure of the encapsulated optoelectronic component module 200. Therefore, compared with other processes that require forming an additional packaging layer on the upper surface of the optoelectronic component module, the process of the present invention can avoid the high temperature, plasma bombardment and / or acid-base properties of the reactants used to manufacture the packaging layer from damaging the components or materials in the optoelectronic component module 200. In addition, compared with other materials, using a glass substrate or a silicon substrate as the transparent substrate 240 can achieve the best packaging effect. In addition, according to design requirements, the substrate can be further thinned.

[0092] Please continue to refer to Figure 2C . If the light-transmitting electrode 250 is directly formed on the first carrier transport layer 260 and the photoactive layer 270 by a deposition process such as evaporation, sputtering or coating, the high temperature, plasma bombardment and / or the acidity and alkalinity of the reactants in the deposition process may damage a portion of the photoelectric conversion module 200B. In addition, the process of depositing other film layers of the photoelectric conversion module 200B may also damage the circuit module 200A. However, the second electrode 290 of the photoelectric conversion module 200B of the present invention is interconnected with the first electrode 220 of the circuit module 200A by a bonding process, thereby preventing the evaporation, sputtering, coating and other processes from damaging the components in the circuit module 200A, such as the first electrode 220.

[0093] In operation 140, as Figure 2D As shown, an optical functional layer OF1 is formed to cover the surface of the transparent substrate 240 away from the circuit module 200A (i.e., the upper surface of the transparent substrate 240), thereby forming an optoelectronic component module 200'. In some embodiments, the optical functional layer OF1 includes a filter, an anti-reflection structure, a focusing structure, a water- and oxygen-blocking structure, or a combination thereof. The filter is, for example, a color filter. The anti-reflection structure is, for example, an anti-reflection coating (ARC). The focusing structure is, for example, a plurality of convex lenses. The water- and oxygen-blocking structure is, for example, a water- and oxygen-blocking film. In some embodiments, the optical functional layer OF1 is formed on the transparent substrate 240 by a coating or deposition process. When forming the optical functional layer OF1, the transparent substrate 240 can protect the film layer below the transparent substrate 240 from being affected by the process temperature of forming the optical functional layer OF1, thereby avoiding damage or degradation of the film layer.

[0094] Please continue to refer to Figure 2D. The optoelectronic component module 200' includes a circuit module 200A and a photoelectric conversion module 200B'. The circuit module 200A includes a circuit substrate 210, a first electrode 220 and a circuit 230. The photoelectric conversion module 200B' is disposed on the circuit module 200A, wherein the photoelectric conversion module 200B' includes a second electrode 290, a second carrier transport layer 280, a photoactive layer 270, a first carrier transport layer 260, a light-transmitting electrode 250, a light-transmitting substrate 240 and an optical functional layer OF1. The second electrode 290 is electrically connected to the first electrode 220. The photoactive layer 270 is disposed on the second electrode 290 to cover the second electrode 290. The light-transmitting electrode 250 is disposed on the photoactive layer 270. The light-transmitting substrate 240 is disposed on the light-transmitting electrode 250. The optical functional layer OF1 is disposed on the light-transmitting substrate 240. The first carrier transport layer 260 is disposed between the light-transmitting electrode 250 and the photoactive layer 270. The second carrier transport layer 280 is disposed between the photoactive layer 270 and the second electrode 290. In other embodiments, the first carrier transport layer 260 is omitted, so that the light-transmitting electrode 250 directly contacts the photoactive layer 270. In other embodiments, the second carrier transport layer 280 is omitted, so that the photoactive layer 270 directly contacts the second electrode 290.

[0095] FIG. 3A to FIG. 3B FIG. 3 is a cross-sectional schematic diagram of an intermediate stage of manufacturing an optoelectronic component module 300 according to various embodiments of the present invention. Figure 3A As shown, the photoelectric conversion module 300B is manufactured. Please refer to operation 120 of manufacturing the photoelectric conversion module 200B to manufacture the photoelectric conversion module 300B. The difference between the method of manufacturing the photoelectric conversion module 200B and the method of manufacturing the photoelectric conversion module 300B is that the method of manufacturing the photoelectric conversion module 300B further includes: before forming the transparent electrode 250 on the transparent substrate 240, forming an optical function layer OF2 to cover the upper surface of the transparent substrate 240. Next, as Figure 3B As shown, please refer to operation 130 of manufacturing the optoelectronic component module 200 to manufacture the optoelectronic component module 300. In more detail, the circuit module 200A and the optoelectronic conversion module 300B are bonded so that the second electrode 290 is electrically connected to the first electrode 220. It is worth noting that a higher temperature (for example, higher than 160°C) and a longer time are usually required to form the optical functional layer OF2. In the method for manufacturing the optoelectronic component module 300 of the present invention, the temperature and time required to form the optical functional layer OF2 will not affect the properties of other film layers in the optoelectronic conversion module 300B at all, so that the optoelectronic component module 300 has excellent photoelectric conversion properties and reliability. The implementation of the optical functional layer OF2 please refer to the implementation of the optical functional layer OF1, which will not be repeated.

[0096] FIG. 4A to FIG. 4BSchematic cross-sectional view of an intermediate stage of manufacturing a photovoltaic component module according to various embodiments of the present invention. Figure 4A As shown, the photoelectric conversion module 400B is manufactured. Please refer to operation 120 of manufacturing the photoelectric conversion module 200B to manufacture the photoelectric conversion module 400B. The difference between the method of manufacturing the photoelectric conversion module 200B and the method of manufacturing the photoelectric conversion module 400B is that the method of manufacturing the photoelectric conversion module 400B further includes: before or after forming the transparent electrode 250 on the transparent substrate 240, forming an optical function layer OF3 to cover the lower surface of the transparent substrate 240. Next, as Figure 4B As shown, please refer to operation 130 of manufacturing the optoelectronic component module 200 to manufacture the optoelectronic component module 400. In more detail, the circuit module 200A and the optoelectronic conversion module 400B are bonded so that the second electrode 290 is electrically connected to the first electrode 220. It is worth noting that a higher temperature (for example, higher than 160°C) and a longer time are usually required to form the optical functional layer OF3. In the method for manufacturing the optoelectronic component module 400 of the present invention, the temperature and time required to form the optical functional layer OF3 will not affect the properties of other film layers in the optoelectronic conversion module 400B, so that the optoelectronic component module 400 has excellent photoelectric conversion properties and reliability. The implementation of the optical functional layer OF3 please refer to the implementation of the optical functional layer OF1, which will not be repeated.

[0097] Figure 5A1 is a cross-sectional schematic diagram of an optoelectronic component module 500 according to various embodiments of the present invention. The optoelectronic component module 500 includes a circuit module 500A and a photoelectric conversion module 500B disposed on the circuit module 500A. The circuit module 500A includes a circuit substrate 510 and a first electrode ED1, wherein the circuit substrate 510 includes a substrate 512 and an insulating layer 514 located on the substrate 512, and the first electrode ED1 is disposed on the insulating layer 514. The photoelectric conversion module 500B includes a transparent substrate 540, a transparent electrode 550, a first carrier transport layer 560, a photoactive layer 570, a second carrier transport layer 580 and a second electrode ED2. The second electrode ED2 is electrically connected to the first electrode ED1. The photoactive layer 570 is disposed on the second electrode ED2 to cover the second electrode ED2. The transparent electrode 550 is disposed on the photoactive layer 570. The transparent substrate 540 is disposed on the transparent electrode 550. The first carrier transport layer 560 is disposed between the light-transmitting electrode 550 and the photoactive layer 570. The second carrier transport layer 580 is disposed between the photoactive layer 570 and the second electrode ED2. In other embodiments, the first carrier transport layer 560 is omitted, so that the light-transmitting electrode 550 directly contacts the photoactive layer 570. In other embodiments, the second carrier transport layer 580 is omitted, so that the photoactive layer 570 directly contacts the second electrode ED2. The formation method, materials and functions of the substrate 512, the light-transmitting substrate 540, the light-transmitting electrode 550, the first carrier transport layer 560, the photoactive layer 570, the second carrier transport layer 580 and the second electrode ED2 refer to the formation method, materials and functions of the circuit substrate 210, the light-transmitting substrate 240, the light-transmitting electrode 250, the first carrier transport layer 260, the photoactive layer 270, the second carrier transport layer 280 and the second electrode 290, which will not be repeated.

[0098] Please continue to refer to Figure 5A The optoelectronic component module 500 further includes a conductive block B1, wherein the first electrode ED1 is electrically connected to the second electrode ED2 through the conductive block B1. The conductive block B1 is, for example, a solder block. In other embodiments, the first electrode ED1 directly contacts the second electrode ED2 (not shown). Figure 5A As shown, the second electrode ED2 covers the lower surface US and the side surface SW1 of the second carrier transport layer 580, the side surface SW2 of the photoactive layer 570, and the side surface SW3 of the first carrier transport layer 560. Figure 5A As shown, the circuit module 500A further includes a third electrode ED3, and the third electrode ED3 is electrically connected to the transparent electrode 550 through a conductive block B2. The conductive block B2 is, for example, a solder block. In other embodiments, the transparent electrode 550 directly contacts the third electrode ED3 (not shown). Figure 5AAs shown, the optoelectronic component module 500 further includes a sealant S, wherein the sealant S is disposed between the edge of the optoelectronic conversion module 500B and the edge of the circuit module 500A to encapsulate the optoelectronic component module 500. In some embodiments, the sealant S, the optoelectronic conversion module 500B, and the circuit module 500A surround the sealed chamber C. In some embodiments, the sealant S includes epoxy resin. In some embodiments, the substrate 512 is a silicon wafer substrate, the first electrode ED1, the second electrode ED2, and the third electrode ED3 are metal electrodes, and the light-transmitting electrode 550 is an ITO electrode.

[0099] Figure 5B is formed Figure 5A Please refer to the cross-sectional diagram of the photoelectric conversion module 500B. Figure 1 In operation 120, the photoelectric conversion module 500B is manufactured. In operation 121, a light-transmitting electrode 550 is formed on the light-transmitting substrate 540. In operation 122, a first carrier transport layer 560 is formed on the light-transmitting electrode 550. In operation 123, a photoactive layer 570 is formed on the first carrier transport layer 560. In operation 124, a second carrier transport layer 580 is formed on the photoactive layer 570. In operation 125, a second electrode ED2 is formed on the second carrier transport layer 580. In more detail, the second electrode ED2 is formed to cover the surface and side SW1 of the second carrier transport layer 580, the side SW2 of the photoactive layer 570, and the side SW3 of the first carrier transport layer 560. Please refer to Figure 5A , please refer to Figure 1 The method of manufacturing the optoelectronic component module 500 may further include: disposing a sealant S between an edge of the optoelectronic conversion module 500B and an edge of the circuit module 500A to form a sealed chamber C surrounded by the sealant S, the optoelectronic conversion module 500B and the circuit module 500A.

[0100] Please refer again Figure 5A Referring to the embodiments of the aforementioned optoelectronic component module 200 ′, optoelectronic component module 300 or optoelectronic component module 400 , an optical function layer OF1 , an optical function layer OF2 or an optical function layer OF3 may be further provided in the optoelectronic component module 500 .

[0101] The features of the present invention will be described in more detail below with reference to Experimental Examples 1 to 2. Although the following embodiments are described, the materials used, their amounts and ratios, processing details, and processing procedures, etc., may be appropriately changed without exceeding the scope of the present invention. Therefore, the present invention should not be interpreted restrictively by the embodiments described below.

[0102] Experimental Example 1: Manufacturing Photoelectric Component Module and Photoelectric Conversion Module

[0103] Figure 6 It is a cross-sectional schematic diagram of the optoelectronic component module 600 of Example 1. Figure 7 2 is a schematic cross-sectional view of a photoelectric conversion module 700 according to Comparative Example 1. Figure 8 4 is a cross-sectional schematic diagram of a photovoltaic component module 800 of Comparative Example 2.

[0104] like Figure 6 As shown, the optoelectronic component module 600 of Example 1 includes a circuit module 600A and a photoelectric conversion module 600B that are bonded to each other. The circuit module 600A includes a silicon substrate 610 and a silver electrode 620 disposed on the silicon substrate 610. The photoelectric conversion module 600B includes a glass substrate 640, an ITO electrode 650, a zinc oxide layer 660, a photoactive layer 670, a molybdenum trioxide layer 680, and a silver electrode 690. The optoelectronic component module 600 can receive light L1 from above. The method for forming the optoelectronic component module 600 includes the following operations. The glass substrate 640 covered by the ITO electrode 650 is pre-cleaned with a detergent and 2-propanol in an ultrasonic bath, and the glass substrate 640 is dried in an oven at 60°C. A zinc oxide solution is spin-coated on the ITO electrode 650 and heated at 120°C for 10 minutes to form a zinc oxide layer 660 with a thickness of 40nm. A P-type organic semiconductor having formula (1) and an N-type organic semiconductor having formula (2) with a molar ratio of 1:1.2 are dissolved in o-xylene to form a mixture, and the mixture is spin-coated on the zinc oxide layer 660 in a nitrogen environment to form a photoactive layer 670, wherein formula (1) is Formula (2) is Annealing is performed at 120°C for 5 minutes. Next, a molybdenum trioxide layer 680 with a thickness of 8 nm is deposited by thermal evaporation, and a silver electrode 690 with a thickness of 100 nm is deposited by thermal evaporation to form a photoelectric conversion module 600B. The silver electrode 690 of the photoelectric conversion module 600B is bonded to the silver electrode 620 of the circuit module 600A by silver paste. In addition, the optoelectronic component module 600 is surrounded by epoxy resin as a sealant (not shown) to bond and encapsulate the circuit module 600A and the photoelectric conversion module 600B. It is worth noting that the photoelectric conversion module 600B is formed on the circuit module 600A by bonding, rather than being directly deposited on the circuit module 600A, so as to avoid damage to the circuit module 600A or the photoelectric conversion module 600B during the manufacturing process.

[0105] like Figure 7As shown, the photoelectric conversion module 700 of Comparative Example 1 includes a glass substrate 640, an ITO electrode 650, a zinc oxide layer 660, a photoactive layer 670, a molybdenum trioxide layer 680 and a silver electrode 690. The photoelectric component module 600 can receive light L2 from below. The method for forming the photoelectric conversion module 700 can directly refer to the method for forming the photoelectric conversion module 600B of Example 1.

[0106] like Figure 8 As shown, the optoelectronic component module 800 of Comparative Example 2 includes a circuit module 800A and a photoelectric conversion module 800B. The circuit module 800A includes a silicon substrate with an opaque silver electrode. The photoelectric conversion module 800B includes a silver electrode 690, a zinc oxide layer 660, a photoactive layer 670, a molybdenum trioxide layer 680 and an IZO electrode 652. The optoelectronic component module 800 can receive light L3 from above. The method for forming the optoelectronic component module 800 includes the following operations. A silver electrode 690 with a thickness of 100 nm is deposited on the circuit module 800A by thermal evaporation. A zinc oxide solution is spin-coated on the silver electrode 690 and heated at 120° C. for 10 minutes to form a zinc oxide layer 660 with a thickness of 40 nm. A P-type organic semiconductor having formula (1) and an N-type organic semiconductor having formula (2) with a molar ratio of 1:1.2 are dissolved in o-xylene to form a mixture, and the mixture is spin-coated on the zinc oxide layer 660 in a nitrogen environment to form a photoactive layer 670. Annealing is performed at 120°C for 5 minutes. Next, a molybdenum trioxide layer 680 with a thickness of 8nm is deposited by thermal evaporation. The IZO electrode 652 is deposited by sputtering to form a photovoltaic component module 800. During sputtering, a 120nm thick and sheet resistance of 100Ωsq is first deposited by radio frequency power. -1 The IZO electrode 652 is formed at a pressure of 10 -3 The deposition is carried out in an oxygen environment of 0.1 torr, and the operating power is 80W. It is worth noting that the photoelectric conversion module 800B is formed by directly depositing the various film layers in the photoelectric conversion module 800B on the circuit module 800A, so the process of manufacturing the photoelectric conversion module 800B may damage the materials in the photoelectric conversion module 800B. For example, the operation of forming the IZO electrode 652 may damage the molybdenum trioxide layer 680 and the photoactive layer 670 in the photoelectric conversion module.

[0107] Experimental Example 2: Measurement of Photoelectric Component Module and Photoelectric Conversion Module

[0108] Fig. 9 1 is a current density-voltage relationship diagram of the photovoltaic component module 600 of Example 1, the photovoltaic conversion module 700 of Comparative Example 1, and the photovoltaic component module 800 of Comparative Example 2. Fig.101 is a graph showing the relationship between external quantum efficiency and wavelength of the optoelectronic component module 600 of Example 1, the optoelectronic conversion module 700 of Comparative Example 1, and the optoelectronic component module 800 of Comparative Example 2. Fig.11 1 is a diagram showing the relationship between detection and wavelength of the optoelectronic component module 600 of Example 1, the optoelectronic conversion module 700 of Comparative Example 1, and the optoelectronic component module 800 of Comparative Example 2.

[0109] like Figure 7 As shown, the photoelectric conversion module 700 of Comparative Example 1 is measured by applying light L2. The measurement results are shown in FIG. Fig. 9 The curve c1 of FIG. 10 and the curve C1 of FIG. Fig.11 The current density, external quantum efficiency (EQE) and detection performance of the photoelectric conversion module 700 of Comparative Example 1 are the best. Figure 6 and Figure 7 As shown, the difference between the optoelectronic component module 600 and the optoelectronic conversion module 700 is that the optoelectronic component module 600 further includes a circuit module 600A. The optoelectronic component module 600 of Example 1 is measured by applying light L1. The measurement results are shown in FIG. Fig. 9 The curve e1, Fig.10 The curve E1 and Fig.11 The curve E1'. Figures 9 to 11 It can be seen that the current density, EQE and detectivity of the photovoltaic component module 600 of Example 1 and the photovoltaic conversion module 700 of Comparative Example 1 are similar, which means that the bonding step in the process of manufacturing the photovoltaic component module 600 has little effect on the properties of the photovoltaic component module 600.

[0110] Next, please refer to Figure 8 The photoelectric conversion module 800B above the circuit module 800A is formed on the circuit module 800A by deposition. The photoelectric component module 800 of Comparative Example 2 is measured by applying light L3. The measurement results are shown in FIG. Fig. 9 The curve c2, Fig.10 The curve C2 and Fig.11 The curve C2'. Figures 9 to 11 It can be seen that the current density, EQE and detection performance of the photovoltaic component module 800 of Comparative Example 2 are the worst, which means that the step of depositing each layer of the photovoltaic conversion module 800B on the circuit module 800A will cause the material in the photovoltaic conversion module 800B to be damaged, thereby affecting the properties of the photovoltaic component module 800. From the test results of Example 1 and Comparative Example 2, it can be seen that the bonding step of Example 1 can enable the photovoltaic component module 600 to maintain excellent photovoltaic characteristics.

[0111] In summary, the present invention provides a photovoltaic component module and a manufacturing method thereof. The photovoltaic component module includes a circuit module and a photoelectric conversion module. The manufacturing method of the present invention can prevent the process (such as a deposition process) of forming the photovoltaic component module from affecting the properties of the circuit module. Therefore, the photovoltaic component module of the present invention can have excellent photoelectric properties, such as high current density, high EQE and high detection.

[0112] Although the present invention has been described in considerable detail with reference to certain embodiments, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.

[0113] It is obvious to those with ordinary knowledge in the art that various modifications and changes can be made to the structure of the present invention without departing from the scope or spirit of the present invention. In view of the foregoing, the present invention is intended to cover modifications and changes to the present invention that fall within the scope of the attached patent application.

Claims

1. A photovoltaic component module, characterized in that: include: A circuit module includes a first electrode; as well as A photoelectric conversion module is disposed on the circuit module, wherein the photoelectric conversion module comprises: A second electrode electrically connected to the first electrode; A photoactive layer is disposed on the second electrode; A light-transmitting electrode is disposed on the photoactive layer; and The light-transmitting substrate is disposed on the light-transmitting electrode.

2. The optoelectronic component module according to claim 1, characterized in that: The first electrode directly contacts the second electrode.

3. The optoelectronic component module according to claim 1, characterized in that: The first electrode and the second electrode form an ohmic junction.

4. The optoelectronic component module according to claim 1, characterized in that: The light-transmitting substrate allows visible light, near infrared light or short-wave infrared light to penetrate.

5. The optoelectronic component module according to claim 1, characterized in that: The material of the light-transmitting substrate includes polyimide, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, silicon or a combination thereof.

6. The optoelectronic component module according to claim 1, characterized in that: It further comprises an optical function layer, wherein the optical function layer is disposed on the light-transmitting substrate or between the light-transmitting electrode and the light-transmitting substrate.

7. The optoelectronic component module according to claim 1, characterized in that: The invention further comprises a conductive block, wherein the first electrode is electrically connected to the second electrode through the conductive block.

8. The optoelectronic component module according to claim 1, characterized in that: Also includes: A first carrier transport layer is disposed between the light-transmitting electrode and the photoactive layer; and The second carrier transport layer is disposed between the photoactive layer and the second electrode.

9. The optoelectronic component module according to claim 8, characterized in that: The second electrode covers the lower surface and side surfaces of the second carrier transport layer, side surfaces of the photoactive layer and side surfaces of the first carrier transport layer.

10. The optoelectronic component module according to claim 1, characterized in that: The circuit module further includes a third electrode, and the third electrode is electrically connected to the light-transmitting electrode through a conductive block.

11. The optoelectronic component module according to claim 1, characterized in that: The invention further comprises a sealant, wherein the sealant is disposed between the edge of the photoelectric conversion module and the edge of the circuit module, and the sealant, the photoelectric conversion module and the circuit module surround the sealed chamber.

12. The optoelectronic component module according to claim 1, characterized in that: The photoactive layer includes an organic semiconductor, an inorganic semiconductor, a quantum dot, a perovskite or a combination thereof.

13. A method for manufacturing a photovoltaic component module, characterized in that: include: A receiving circuit module, wherein the circuit module includes a first electrode; A photoelectric conversion module is formed, comprising: forming a light-transmitting electrode on the light-transmitting substrate; forming a photoactive layer on the light-transmitting electrode; and forming a second electrode on the photoactive layer; and The circuit module and the photoelectric conversion module are joined to make the second electrode electrically connected to the first electrode.

14. The method according to claim 13, characterized in that The circuit module and the photoelectric conversion module are joined by laminating, bonding or welding.

15. The method according to claim 13, characterized in that The method further comprises: before forming the light-transmitting electrode on the light-transmitting substrate, forming an optical function layer to cover the upper surface of the light-transmitting substrate.

16. The method according to claim 13, characterized in that The method further comprises: before or after forming the light-transmitting electrode on the light-transmitting substrate, forming an optical function layer to cover the lower surface of the light-transmitting substrate.

17. The method according to claim 13, characterized in that The method further comprises: disposing a sealant between the edge of the photoelectric conversion module and the edge of the circuit module to form a closed chamber surrounded by the sealant, the photoelectric conversion module and the circuit module.

18. The method according to claim 13, characterized in that Also includes: Before forming the photoactive layer on the light-transmitting electrode, forming a first carrier transport layer on the light-transmitting electrode; as well as Before forming the second electrode on the photoactive layer, a second carrier transport layer is formed on the photoactive layer.

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