Pad exposing method of Micro OLED, Micro OLED and manufacturing method thereof

Abstract

The invention discloses a Pad exposing method of a Micro OLED. The method comprises the following steps: preparing an anode material layer on a driving circuit substrate; coating photoresist on the anode material layer; exposing the mask and developing the photoresist; preparing a Pad etching barrier layer; removing the photoresist; patterning the OC glue; and the Pad dielectric substance is etched and exposed. According to the Pad exposing method of the Micro OLED, the anode material layer is used as the Pad etching barrier layer, and the Pad exposing process only needs one-time etching, so that one-time gluing, exposure and developing processing steps are reduced, the manufacturing cost is reduced, and the production yield is improved. The invention further discloses a manufacturing method of the Micro OLED and the Micro OLED.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular, the present invention relates to a Micro OLED Pad exposure method, a Micro OLED and a manufacturing method thereof. Background Art

[0002] Organic light-emitting diodes (OLED displays) are widely regarded as one of the most promising lighting and display devices in the industry due to their low cost, low power consumption, fast response speed, wide viewing angle, high contrast, high brightness and other advantages. With the advancement and development of science and technology, people have higher demands in the pursuit of display experience. In addition, wearable display devices make it physically feasible. The advent of the 5G era will solve the problem of data transmission. Therefore, in recent years, Micro OLED (Organic Light Emitting Display) has been called the dark horse of the next generation of display technology. It is now widely used in military markets such as machine-worn helmets, gun sights, night vision goggles, etc., and with the application of new technologies such as AR / VR and autonomous driving, Micro OLED microdisplays will usher in explosive growth.

[0003] The existing silicon-based OLED Pad (pad area) exposure process is to go through the steps of spin coating photoresist, photolithography, exposure, development, etching and stripping in sequence, using photoresist as a barrier material during etching to form an etching barrier layer. This process requires additional multi-step photolithography process.

[0004] Therefore, the existing silicon-based OLED Pad exposure process has many processing steps, resulting in high manufacturing costs and easily leading to a decrease in yield. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a Micro OLED Pad exposure method, the purpose of which is to reduce processing steps and lower manufacturing costs.

[0006] In order to achieve the above object, the technical solution adopted by the present invention is: a Micro OLED Pad exposure method, comprising the steps of:

[0007] preparing an anode material layer on a driving circuit substrate;

[0008] coating a photoresist on the anode material layer;

[0009] The mask exposes and develops the photoresist;

[0010] preparing a Pad etching barrier layer;

[0011] Removing photoresist;

[0012] OC glue patterning;

[0013] The pad dielectric is exposed by etching.

[0014] An anode material layer is prepared on the driving circuit substrate, and the pad etching barrier layer is the area where the anode material layer above the pad metal is etched and retained.

[0015] The anode material layer is deposited on the driving circuit substrate by magnetron sputtering.

[0016] The anode material layer is a stack of metal and metal oxide.

[0017] The metal is aluminum, silver, molybdenum or magnesium.

[0018] The metal oxide is indium zinc oxide or indium tin oxide.

[0019] The photoresist is spin-coated on the deposited anode material layer, and the photoresist covers the entire surface of the anode material layer.

[0020] The present invention also provides a method for manufacturing a Micro OLED, and the method for manufacturing a Micro OLED uses the above-mentioned Micro OLED Pad exposure method.

[0021] The present invention also provides a Micro OLED, which is manufactured using the above-mentioned Micro OLED Pad exposure method.

[0022] The Micro OLED Pad exposure method of the present invention utilizes the anode material layer as the Pad etching barrier layer. The Pad exposure process only requires one etching, which reduces one coating, exposure, and development processing step, reduces the manufacturing cost, and improves the production yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] This specification includes the following drawings, which show the following contents:

[0024] Figure 1 is a flow chart of a Micro OLED Pad exposure method of the present invention;

[0025] Figure 2.1-2.8 This is the preparation flow chart of Micro OLED;

[0026] Figure 3.1-3.4 It is a flow chart of the prior art silicon-based OLED Pad exposure method;

[0027] The markings in the figure are: 1. Pad metal; 2. Dielectric layer; 3. Tungsten hole; 4. CMOS metal circuit; 5. Anode material layer; 6. Photoresist; 7. Pad etching barrier layer; 8. OC glue. DETAILED DESCRIPTION

[0028] The specific implementation methods of the present invention are further explained in detail below by describing the embodiments with reference to the accompanying drawings, with the aim of helping those skilled in the art to have a more complete, accurate and in-depth understanding of the concept and technical solution of the present invention and facilitating its implementation.

[0029] like Figure 1 , Figure 2.1-2.8 As shown, the present invention provides a Micro OLED Pad exposure method, comprising the following steps:

[0030] S1, preparing an anode material layer 5 on a driving circuit substrate;

[0031] S2, coating a photoresist 6 on the anode material layer;

[0032] S3, mask exposure and development of photoresist 6;

[0033] S4, preparing a Pad etching stop layer 7;

[0034] S5, removing the photoresist;

[0035] S6, OC glue patterning;

[0036] S7, Pad dielectric is etched and exposed.

[0037] Specifically, if Figure 2.1-2.7 As shown, the driving circuit substrate includes a CMOS metal circuit 4, a Pad metal and a dielectric layer 2, the dielectric layer 2 wraps the CMOS metal circuit 4 and the Pad metal, and a tungsten hole 3 is set between the CMOS metal circuit 4 and the Pad metal.

[0038] like Figure 2.2 As shown, in the above step S1, an anode material layer 5 is deposited on the driving circuit substrate by magnetron sputtering. The anode material layer 5 is located on the dielectric layer 2. The anode material layer 5 is a stack of metal and metal oxide. The metal can be aluminum, silver, gold, molybdenum, magnesium and other metal materials. The metal oxide can be a high work function metal oxide such as indium zinc oxide or indium tin oxide.

[0039] like Figure 2.3 As shown, in the above step S2 , the photoresist 6 is spin-coated on the deposited anode material layer 5 , and the photoresist 6 covers the entire surface of the anode material layer 5 .

[0040] like Figure 2.4As shown, in the above step S3, an exposure machine and a mask with a designed pattern are used to expose the photoresist 6, and the pattern on the mask is an anode sub-pixel pattern and a Pad etching blocking layer pattern; wherein the anode sub-pixel pattern is a necessary component of the MicroOLED display, which is not shown in the figure; and a developing device is used to develop the photoresist on the exposed CMOS wafer into a photoresist pattern.

[0041] like Figure 2.5 As shown, in the above step S4, a dry etching device is used to etch the upper surface of the CMOS wafer, so that the anode material layer 5 not covered and protected by the photoresist 6 is etched away to produce a Pad etching barrier layer 7 and anode pixels, wherein the anode pixels are a necessary component of the Micro OLED display and are not shown in the figure.

[0042] like Figure 2.6 As shown, in the above step S5, the photoresist remaining on the surface of the CMOS wafer is removed by dry stripping or wet stripping.

[0043] like Figure 2.7 As shown, in the above step S6, the OC glue 8 is placed at the desired position by using an inkjet printing method or a gluing, exposing, and developing method. The OC glue is an essential component of the Micro OLED display. The OC glue covers the entire display area. The Micro OLED display area is not shown in the figure.

[0044] like Figure 2.8 As shown, in the above step S7, the Pad is etched using the Pad blocking layer 7, and the Pad buried in the dielectric layer 2 is exposed by dry etching or wet etching.

[0045] The above-mentioned Micro OLED Pad exposure method uses the anode material as an etching barrier layer, wherein the Pad etching barrier layer 7 and the anode pixel are made at the same time. Since the anode pixel is an essential part of the Micro OLED, the above-mentioned steps do not increase the manufacturing process of the Micro OLED, but instead reduce the separate coating, exposure, development and degumming processes in the traditional Micro OLED Pad exposure process, and only require an etching process similar to the prior art MicroOLED Pad exposure.

[0046] In addition, the present invention also provides a method for manufacturing a Micro OLED, and the method for manufacturing a Micro OLED uses the above-mentioned Micro OLED Pad exposure method.

[0047] Among them, compared with the prior art, the Mirco OLED has the same distinguishing technical features and technical effects as the Pad exposure method of the MircoOLED. The conventional MircoOLED Pad exposure method is to complete most of the MircoOLED processes (including making anode pixels and OC glue), and then continue to perform the glue coating, exposure, development, etching and degumming processes, such as Figure 3.1-3.4 As shown, Figure 3.1 The prior art Pad etching exposes the incoming CMOS wafer; Figure 3.2 For photoresist patterning, including the steps of coating, exposing and developing; Figure 3.3 It is the process of etching the dielectric layer of the Pad; Figure 3.4 It is a photoresist removal process; compared with the prior art, the present invention reduces the additional glue coating, exposure and development, and glue removal processes in the prior art MircoOLED Pad exposure process.

[0048] In addition, the present invention also provides a Micro OLED, which is manufactured using the above-mentioned Micro OLED Pad exposure method.

[0049] Among them, compared with the prior art, the Micro OLED has the same distinguishing technical features and technical effects as the Pad exposure method of the Micro OLED, which will not be repeated here.

[0050] The present invention is described above by way of example in conjunction with the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-mentioned methods. As long as various non-substantial improvements are made using the method concept and technical solution of the present invention; or the above concept and technical solution of the present invention are directly applied to other occasions without improvement, they are all within the protection scope of the present invention.

Claims

1. A method for exposing a Micro OLED pad, characterized in that: Includes steps: preparing an anode material layer on a driving circuit substrate; coating a photoresist on the anode material layer; The mask exposes and develops the photoresist; preparing a Pad etching barrier layer; Removing photoresist; OC glue patterning; The pad dielectric is exposed by etching.

2. The Micro OLED Pad exposure method according to claim 1, characterized in that: An anode material layer is prepared on the driving circuit substrate, and the pad etching barrier layer is the area where the anode material layer above the pad metal is etched and retained.

3. The Micro OLED Pad exposure method according to claim 2, characterized in that: The anode material layer is deposited on the driving circuit substrate by magnetron sputtering.

4. The Micro OLED Pad exposure method according to claim 2, characterized in that: The anode material layer is a stack of metal and metal oxide.

5. The Micro OLED Pad exposure method according to claim 4, characterized in that: The metal is aluminum, silver, molybdenum or magnesium.

6. The Micro OLED Pad exposure method according to claim 4, characterized in that: The metal oxide is indium zinc oxide or indium tin oxide.

7. The Micro OLED Pad exposure method according to any one of claims 2 to 6, characterized in that: The photoresist is spin-coated on the deposited anode material layer, and the photoresist covers the entire surface of the anode material layer.

8. A method for manufacturing Micro OLED, characterized in that: The method for manufacturing the Micro OLED uses the Micro OLED Pad exposure method described in any one of claims 1 to 7.

9. Micro OLED, characterized in that: The Micro OLED is manufactured using the MicroOLED Pad exposure method described in any one of claims 1 to 7.

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