A thin film deposition device based on automatic compensation function of target consumption

Abstract

The invention discloses a thin film deposition device based on an automatic compensation function for target material consumption, relates to the technical field of thin film deposition, and comprises a thin film deposition device body and a controller, wherein a box body is arranged outside the thin film deposition device body, a vacuum chamber and a controller are installed inside the box body, a bearing platform and a plurality of target material limiting components are installed inside the vacuum chamber, a driving motor and a plurality of magnets are arranged above the vacuum chamber, a supporting platform and a base are installed at the bottom of the vacuum chamber, an adjusting component and an air supply component are installed at the bottom of the supporting platform, the adjusting component is connected to the bearing platform, a target material block is arranged between the target material limiting components, the target material block cooperates with the driving motor, a plurality of detection components are installed inside the vacuum chamber, the detection components cooperate with the driving motor and the adjusting component respectively, the detection components can detect the surface of a wafer, so that when the device is used, the air supply component and the target material can be supplemented according to the condition presented by the wafer.

Description

Technical Field

[0001] The invention relates to the technical field of thin film deposition, and in particular to a thin film deposition device based on an automatic compensation function for target material consumption. Background Art

[0002] In semiconductor manufacturing technology, in order to impart certain properties to the material used, it is necessary to form a thin film on the surface of the material.

[0003] Thin film deposition methods usually include physical vapor deposition;

[0004] When the existing equipment is in use, the wafer can be placed in the reaction chamber and the deposition gas can be filled into the reaction chamber, so that the reaction chamber can be heated by a heating plate, and the gas entering the reaction chamber is deposited on the wafer to form a thin film. However, the target material in the existing thin film deposition equipment will naturally be worn out during use. However, after the target material is worn out, if it still maintains a quantitative output, it cannot guarantee that the target material releases enough particles. When the target material cannot release enough particles, the thin film deposition process will be increased, thereby reducing work efficiency. Summary of the invention

[0005] The object of the present invention is to provide a thin film deposition device based on an automatic compensation function for target material consumption, so as to solve the problems raised in the prior art.

[0006] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a thin film deposition device based on the automatic compensation function of target material consumption, comprising a thin film deposition device body and a controller, a box body is arranged outside the thin film deposition device body, a vacuum chamber and the controller are installed inside the box body, a carrier table and multiple groups of target material limiting components are installed in the vacuum chamber, a driving motor and multiple groups of magnets are arranged above the vacuum chamber, a supporting platform and a base are installed at the bottom of the vacuum chamber, an adjusting component and a gas supply component are installed at the bottom of the supporting platform, the adjusting component is connected to the carrier table, a target block is arranged between the target material limiting components, the target block cooperates with the driving motor, multiple groups of detection components are installed inside the vacuum chamber, the detection components cooperate with the driving motor and the adjusting component respectively, and the detection component can detect the wafer surface.

[0007] Furthermore, the adjustment component includes an adjusting motor, which is installed at the bottom of the supporting platform. Limiting slots are respectively arranged above the supporting platform and the base, and there are two groups of limiting slots. A driving wheel is installed at the output end of the adjusting motor, and a driven wheel is installed in the limiting slot on the supporting platform. The driven wheel cooperates with the driving wheel, and an adjusting cylinder is installed above the driven wheel. The output end of the adjusting cylinder is installed in the limiting slot on the base through a bearing, and the output end of the adjusting cylinder is connected to the supporting platform, and the adjusting motor and the adjusting cylinder are respectively connected to the controller.

[0008] Furthermore, the supporting platform is installed in the vacuum chamber through a support rod, the supporting platform is connected to the support rod through a bearing, a supporting groove is arranged above the supporting platform, an isolation bearing is arranged in the middle of the outer part of the supporting platform, the isolation bearing is embedded in the supporting platform, a barrier film is installed outside the isolation bearing, and the other end of the barrier film is connected to the base.

[0009] Furthermore, a partition is provided above the vacuum chamber, the driving motor is installed on the partition, a driving slot is opened on the partition, a driving disk is installed at the output end of the driving motor, the driving disk is located inside the driving slot, a plurality of driving magnets are provided on the driving disk, and the driving magnets cooperate with the target block.

[0010] Furthermore, a mounting groove is provided on the target block, a matching disk is installed inside the mounting groove, the matching disk cooperates with the driving disk, the matching disk is provided with multiple groups of matching magnets, and the matching magnets cooperate with the driving magnets.

[0011] Furthermore, the S-pole orientation and the N-pole orientation of the driving magnet are respectively arranged alternately on the driving disk, and the S-pole orientation and the base orientation of the matching magnet are respectively arranged alternately on the matching disk.

[0012] Furthermore, the target material limiting assembly includes multiple groups of fixed rods, grooves are provided at the bottom of the fixed rods, limiting rods are installed between the grooves through bearings, limiting cylinders are installed inside the fixed rods, the output ends of the limiting cylinders cooperate with the limiting rods, and the limiting rods are provided with grooves on the side in contact with the target material block, and balls are provided inside the grooves, and the balls are in contact with the target material block.

[0013] Furthermore, the gas supply assembly includes a gas supply tank and a vacuum pump, the gas supply tank is installed inside the box, a flow sensor is installed at the output end of the gas supply tank, the output end of the gas supply tank is connected to the vacuum chamber, the vacuum pump is connected to the vacuum chamber, and the gas supply tank and the vacuum pump are respectively connected to the controller.

[0014] Furthermore, the detection assembly includes two groups of limit plates, an X-ray diffractor is installed between the two groups of limit plates, the X-ray diffractor is installed between the two groups of limit plates through bearings, an adjustment motor is installed outside the limit plates, the adjustment motor is connected to the X-ray diffractor, and the X-ray diffractor is connected to a controller.

[0015] Furthermore, an observation window and a control panel are provided on the outside of the box body, the observation window is used to observe the vacuum chamber, the control panel is connected to a controller, and the controller is installed at the bottom of the box body.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] 1. When the device is in use, it can ensure that the wafer can be covered with sufficient and uniform deposits, making the finished product more perfect. When in use, it can keep the argon gas and the target material in a relatively balanced state. The balance between the two can keep the deposits at a certain amount, thereby ensuring the effect of the opportunity;

[0018] 2. When the target material of the device is in use, it can be evenly adjusted according to the distribution of target atoms. When it is used specifically, when the detection component detects that the deposits on the wafer are relatively scattered and uneven, it means that the target atoms shed by the target material are not uniform enough, and then the driving motor can drive the driving disk. Because a matching disk is provided on the target block, and because the driving disk and the matching disk cooperate with each other, when the driving motor rotates, it can drive the target block to rotate, and then adjust the distribution of target atoms, thereby assisting the deposition of wafer thin films;

[0019] 3. When the target atoms on the wafer are still uneven, the carrier table can be adjusted by adjusting the component. By adjusting the carrier table, more target atoms can be evenly received, so that the target atoms on the wafer can be fully and evenly covered on it. During specific use, the driving wheel can be driven to rotate by adjusting the motor, and the driving wheel and the driven wheel are engaged with each other, thereby driving the driven wheel to rotate, and the driven wheel can rotate around the driving wheel in the limiting groove. Because the adjusting cylinder on the driven wheel is connected to the carrier table, it can drive the carrier table to rotate together. At the same time, the adjusting cylinder can adjust the angle of the carrier table according to the value obtained by the detection component, so that the orientation of the wafer can better receive the target atoms. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic diagram of the axonometric structure of the present invention as a whole;

[0021] Figure 2 It is a schematic diagram of the structure of the present invention in cross section;

[0022] Figure 3 It is a schematic diagram of the structure above the base of the present invention;

[0023] Figure 4 It is a structural schematic diagram of the upper part of the support platform of the present invention;

[0024] Figure 5 It is a schematic diagram of the internal structure of the present invention;

[0025] Figure 6 It is a schematic cross-sectional structure diagram of the target material limiting assembly of the present invention;

[0026] Figure 7 It is a schematic diagram of the structure of the target block of the present invention;

[0027] Figure 8 For the present invention Figure 5 An enlarged schematic diagram of the area "A" in the figure;

[0028] Fig. 9 For the present invention Figure 5 Enlarged schematic diagram of point "B" in the figure.

[0029] In the figure: 1. Thin film deposition equipment body; 11. Box; 12. Vacuum chamber; 121. Support platform; 122. Base; 13. Loading platform; 131. Loading slot; 132. Isolation bearing; 133. Barrier film; 14. Drive motor; 141. Drive disk; 15. Partition; 151. Drive slot; 2. Target limiting assembly; 21. Fixed rod; 22. Limiting rod; 221. Ball; 23. Limiting cylinder; 3. Adjusting assembly; 31. Adjusting motor; 32. Driving wheel; 33. Driven wheel; 34. Adjusting cylinder; 4. Gas supply assembly; 41. Gas supply tank; 42. Vacuum pump; 43. Flow sensor; 5. Target block; 51. Mounting slot; 52. Matching disk; 6. Detection assembly; 61. Limiting plate; 62. X-ray diffractometer. DETAILED DESCRIPTION

[0030] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0031] Example: Figure 1-Figure 9 As shown, the present invention provides a technical solution of a thin film deposition device based on an automatic compensation function for target consumption, comprising a thin film deposition device body 1 and a controller, wherein a box body 11 is arranged outside the thin film deposition device body 1, a vacuum chamber 12 and the controller are installed inside the box body 11, a carrier 13 and multiple target limiting components 2 are installed inside the vacuum chamber 12, a drive motor 14 and multiple magnets are arranged above the vacuum chamber 12, a support platform 121 and a base 122 are installed at the bottom of the vacuum chamber 12, an adjustment component 3 and a gas supply component 4 are installed at the bottom of the support platform 121, the adjustment component 3 is connected to the carrier 13, a target block 5 is arranged between the target limiting components 2, the target block 5 cooperates with the drive motor 14, multiple detection components 6 are installed inside the vacuum chamber 12, the detection components 6 cooperate with the drive motor 14 and the adjustment component 3 respectively, and the detection component 6 can detect the surface of the wafer;

[0032] When the device is in use, when the wafer is placed on the carrier 13, the vacuum pump 42 will then draw out the air in the vacuum chamber 12, and then the gas supply component 4 will be started to release argon gas from the gas supply component 4 so that the argon gas can contact the target material. Because the target material is connected to an anode, plasma will be generated in the area at the bottom of the target material in the vacuum chamber 12. After the argon gas enters the vacuum chamber 12, it will contact the plasma. After the argon atoms in the argon gas contact with the electrons, argon positive ions will be generated. When the argon positive ions collide with the target material, After the collision, the target atoms will fall off the surface of the target material, and then the target atoms will be deposited on the wafer on the carrier 13. The detection component 6 of the device can detect the wafer on the carrier 13. Through the X-ray diffraction of the wafer, a diffraction spectrum can be formed through the controller. From the diffraction spectrum, it can be known whether the target atoms deposited on the wafer are uniform. When the target atoms are uniformly deposited on the wafer, it means that the generation of target atoms is sufficient and the distribution of target atoms is also relatively uniform, and the wafer at this time is the best finished product.

[0033] When the diffraction pattern diffracted by the detection component 6 is relatively uneven, it also means that the target atoms on the surface of the wafer are not uniform enough. Therefore, the controller will adjust the equipment in various ways according to the supply of argon gas, the intensity of the target material electrification and the distribution of the target atoms during deposition. When the supply of argon gas is less, the contact between argon gas and electrons in the plasma will become less, and then the formed argon positive ions will be less, and then the target atoms generated by the target material will be less. At this time, the supply of argon gas can be increased. When the voltage connected to the target material is small, most of the argon atoms will contact with a small number of electrons to form a small number of argon positive ions, and then in contact with the target material. Afterwards, the generated target atoms are still too few, and the thin film deposition on the wafer cannot be uniformly performed. Because the target material will be gradually consumed, and under the uniform supply of argon gas, the voltage applied to the target material will be stable and less increased, thereby ensuring the stable generation of target atoms. When both are in a certain and stable state, and the thin film deposition on the wafer is still too little or uneven, the angle of the carrier 13 will be adjusted according to the unevenness of the diffraction pattern, or the carrier 13 will be driven to rotate to match the precipitation of the target atoms, so that the target atoms can be uniformly deposited on the wafer, and then the device can uniformly produce finished wafers when used.

[0034] like Figure 4-Figure 5 and Figure 8As shown, in this embodiment, specifically, the adjustment component 3 includes an adjustment motor 31, the adjustment motor 31 is installed at the bottom of the support platform 121, and limit slots are respectively arranged above the support platform 121 and the base 122, two groups of limit slots, a driving wheel 32 is installed at the output end of the adjustment motor 31, a driven wheel 33 is installed in the limit slot on the support platform 121, the driven wheel 33 cooperates with the driving wheel 32, an adjustment cylinder 34 is installed above the driven wheel 33, the output end of the adjustment cylinder 34 is installed in the limit slot on the base 122 through a bearing, the output end of the adjustment cylinder 34 is connected to the bearing platform 13, and the adjustment motor 31 and the adjustment cylinder 34 are respectively connected to the controller;

[0035] When the adjusting component 3 of the device is in use, it can adjust the support platform 13 to rotate or adjust the support platform 13 to tilt in a certain direction. When the adjusting component 3 is in specific use, the adjusting motor 31 can drive the driving wheel 32 to rotate, and because the driving wheel 32 cooperates with the driven wheel 33, it can drive the driven wheel 33 to rotate. When the driven wheel 33 rotates, it will move in the limiting groove along with the limiting groove. Because the driven wheel 33 is provided with an adjusting cylinder 34, and the adjusting cylinder 34 is connected to the support platform 13, when the driven wheel 33 rotates around the driving wheel 32, it can also drive the support platform 13 to rotate, and the telescopic cylinder can pull the support platform 13 to tilt to one side, thereby assisting the thin film deposition.

[0036] like Figure 2-Figure 3 and Figure 8 As shown, in this embodiment, specifically, the bearing platform 13 is installed in the vacuum chamber 12 through a support rod, the bearing platform 13 is connected to the support rod through a bearing, a bearing groove 131 is provided above the bearing platform 13, an isolation bearing 132 is provided in the middle of the outer part of the bearing platform 13, the isolation bearing 132 is embedded and installed on the bearing platform 13, a barrier film 133 is installed outside the isolation bearing 132, the other end of the barrier film 133 is connected to the base 122, and the barrier film 133 has a certain elasticity;

[0037] When in use, the carrier platform 13 of the device can carry and support the wafer. When in use, the carrier platform 13 supports the wafer through the upper carrying groove 131, and the outside of the carrier platform 13 is connected with a barrier film 133, which can prevent the target atoms from being deposited on the bottom of the vacuum chamber 12. Because one end of the barrier film 133 is connected to the isolation bearing 132, when the carrier platform 13 rotates, the barrier film 133 is fixed at the other end, and can pull the isolation bearing 132 to rotate on the carrier platform 13. And because the barrier film 133 has a certain elasticity, when the telescopic cylinder pulls the carrier platform 13, the elastic barrier film 133 can prevent the carrier platform 13 from breaking or breaking when the angle is adjusted.

[0038] like Figure 5 and Fig. 9 As shown, in this embodiment, specifically, a partition 15 is provided above the vacuum chamber 12, the drive motor 14 is installed on the partition 15, a drive slot 151 is provided on the partition 15, a drive disk 141 is installed at the output end of the drive motor 14, the drive disk 141 is located inside the drive slot 151, and a plurality of drive magnets are provided on the drive disk 141, and the drive magnets cooperate with the target block 5;

[0039] The main function of the partition 15 is to limit the driving motor 14, limit the position of the driving motor 14, and the position of its output end. When the driving motor 14 is in specific use, it can drive the driving disk 141 to rotate, and the driving disk 141 can rotate in the driving groove 151. Because the driving magnet cooperates with the target block 5, when the driving disk 141 is driven by the driving motor 14, it can drive the target block 5 to rotate, thereby assisting the deposition uniformity of the target atoms.

[0040] like Figure 7 As shown, in this embodiment, specifically, a mounting groove 51 is provided on the target block 5, a matching disk 52 is installed inside the mounting groove 51, the matching disk 52 cooperates with the driving disk 141, and the matching disk 52 is provided with multiple groups of matching magnets, and the matching magnets cooperate with the driving magnets;

[0041] Because the target block 5 is provided with a mounting groove 51, the matching disk 52 can be associated with the target block 5, and because the matching disk 52 cooperates with the driving disk 141, when the driving motor 14 drives the driving disk 141 to rotate, the driving disk 141 and the matching disk 52 interact with each other and drive the matching disk 52 to rotate at the same time. Since the matching disk 52 is installed on the target block 5, it can drive the target block 5 to rotate synchronously, so that when the target atoms fall off, they can assist in deposition if necessary.

[0042] like Figure 7 and Fig. 9 As shown, in this embodiment, specifically, the S-pole orientation and the N-pole orientation of the driving magnet are alternately arranged on the driving disk 141, and the S-pole orientation and the root orientation of the matching magnet are alternately arranged on the matching disk 52;

[0043] Because the driving magnet and the matching magnet attract each other, and because the driving magnet and the matching magnet have the same distribution, the two can generate a stronger attraction, so that the power transmitted by the driving motor 14 can be transmitted to the matching disk 52 with extremely low loss, thereby driving the entire target block 5 to rotate.

[0044] like Figure 6As shown, in this embodiment, specifically, the target limiting assembly 2 includes a plurality of fixed rods 21, the bottom of the fixed rods 21 is provided with grooves, and the limiting rods 22 are installed between the grooves through bearings. A limiting cylinder 23 is installed inside the fixed rods 21, and the output end of the limiting cylinder 23 cooperates with the limiting rod 22. The limiting rod 22 is provided with a groove on the side in contact with the target block 5, and a ball 221 is provided inside the groove, and the ball 221 is in contact with the target block 5;

[0045] The target material limiting component 2 of the device can limit the target material when in use. When replacing the target material, the target material limiting component 2 needs to be opened before the target material can be installed. The target material limiting component 2 also plays a role in assisting the rotation of the target block 5, so that the device can rotate the target material when necessary, so that the target atoms falling off the surface of the target material can be fully deposited on the wafer.

[0046] like Figure 2-Figure 5 As shown, in this embodiment, specifically, the gas supply assembly 4 includes a gas supply tank 41 and a vacuum pump 42, the gas supply tank 41 is installed inside the box 11, a flow sensor 43 is installed at the output end of the gas supply tank 41, the output end of the gas supply tank 41 is connected to the vacuum chamber 12, the vacuum pump 42 is connected to the vacuum chamber 12, and the gas supply tank 41 and the vacuum pump 42 are respectively connected to the controller;

[0047] The gas supply component 4 of the device can inject argon gas into the vacuum chamber 12, and the vacuum pump 42 can extract excess air in the vacuum chamber 12 to put the vacuum chamber 12 in a vacuum state. During specific use, the output end of the gas supply tank 41 will inject argon gas into the vacuum chamber 12, and the argon gas will also pass through the flow sensor 43. The flow sensor 43 can detect the amount of argon gas passing through, which is convenient for the controller to make subsequent adjustments and assist subsequent work.

[0048] like Figure 2 and Figure 5 As shown, in this embodiment, specifically, the detection assembly 6 includes two groups of limit plates 61, an X-ray diffractor 62 is installed between the two groups of limit plates 61, and the X-ray diffractor 62 is installed between the two groups of limit plates 61 through bearings. An adjustment motor is installed outside the limit plates 61, and the adjustment motor is connected to the X-ray diffractor 62, and the X-ray diffractor 62 is connected to the controller;

[0049] When in use, the detection component 6 can detect the surface of the wafer and detect the target atoms deposited on the surface of the wafer. When in use, the wafer can be diffracted by the X-ray diffractor 62, and a spectrum can be formed through the controller. According to the spectrum, it can be known whether the target atoms on the surface of the wafer meet the requirements and whether they are uniform.

[0050] like Figure 1As shown, in this embodiment, specifically, an observation window and a control panel are provided outside the box 11, the observation window can observe the vacuum chamber 12, the control panel is connected to the controller, and the controller is installed at the bottom of the box 11;

[0051] When the device is in use, the internal operation of the machine can be observed in real time through the observation window, and the device can be controlled through the control panel, thereby facilitating the staff to better control the machine.

[0052] Working principle: When the device is in use, when the wafer is placed on the carrier 13, the vacuum pump 42 will then draw out the air in the vacuum chamber 12, and then the gas supply component 4 will start to release argon gas, so that the argon gas can contact the target material. Because the target material is connected to the anode, plasma will be generated in the area at the bottom of the target material in the vacuum chamber 12. After the argon gas enters the vacuum chamber 12, it will contact the plasma. After the argon atoms in the argon gas come into contact with the electrons, argon positive ions will be generated. When the argon positive ions come into contact with the target After the target material collides with the target material, the target atoms will fall off the surface of the target material, and then the target atoms will be deposited on the wafer on the carrier 13. The detection component 6 of the device can detect the wafer on the carrier 13. By X-ray diffraction of the wafer, a diffraction spectrum can be formed through the controller. From the diffraction spectrum, it can be known whether the target atoms deposited on the wafer are uniform. When the target atoms are uniformly deposited on the wafer, it means that the generation of target atoms is sufficient and the distribution of target atoms is also relatively uniform, and the wafer at this time is the best finished product.

[0053] When the diffraction pattern diffracted by the detection component 6 is relatively uneven, it also means that the target atoms on the surface of the wafer are not uniform enough. Therefore, the controller will adjust the equipment in various ways according to the supply of argon gas, the intensity of the target material electrification and the distribution of the target atoms during deposition. When the supply of argon gas is less, the contact between argon gas and electrons in the plasma will become less, and then the formed argon positive ions will be less, and then the target atoms generated by the target material will be less. At this time, the supply of argon gas can be increased. When the voltage connected to the target material is small, most of the argon atoms will contact with a small number of electrons to form a small number of argon positive ions, and then in contact with the target material. Afterwards, the generated target atoms are still too few, and the thin film deposition on the wafer cannot be uniformly performed. Because the target material will be gradually consumed, and under the uniform supply of argon gas, the voltage applied to the target material will be stable and less increased, thereby ensuring the stable generation of target atoms. When both are in a certain and stable state, and the thin film deposition on the wafer is still too little or uneven, the angle of the carrier 13 will be adjusted according to the unevenness of the diffraction pattern, or the carrier 13 will be driven to rotate to match the precipitation of the target atoms, so that the target atoms can be uniformly deposited on the wafer, and then the device can uniformly produce finished wafers when used.

[0054] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

Claims

1. A thin film deposition device based on target material consumption automatic compensation function, comprising a thin film deposition device body (1) and a controller, characterized in that: The thin film deposition device body (1) is provided with a box body (11) on the outside, a vacuum chamber (12) and the controller are installed inside the box body (11), a carrier platform (13) and a plurality of target material limiting components (2) are installed inside the vacuum chamber (12), a drive motor (14) and a plurality of magnets are arranged above the vacuum chamber (12), a support platform (121) and a base (122) are installed at the bottom of the vacuum chamber (12), an adjustment component (3) and a gas supply component (4) are installed at the bottom of the support platform (121), the adjustment component (3) is connected to the carrier platform (13), a target block (5) is arranged between the target material limiting components (2), the target block (5) cooperates with the drive motor (14), a plurality of detection components (6) are installed inside the vacuum chamber (12), the detection components (6) cooperate with the drive motor (14) and the adjustment component (3) respectively, and the detection component (6) can detect the surface of the wafer; The adjustment component (3) comprises an adjustment motor (31), the adjustment motor (31) being mounted on the bottom of a support platform (121), and limit slots are respectively arranged above the support platform (121) and the base (122), two groups of limit slots, a driving wheel (32) is mounted on the output end of the adjustment motor (31), a driven wheel (33) is mounted in the limit slot on the support platform (121), the driven wheel (33) and the driving wheel (32) cooperate with each other, an adjustment cylinder (34) is mounted above the driven wheel (33), the output end of the adjustment cylinder (34) is mounted in the limit slot on the base (122) via a bearing, the output end of the adjustment cylinder (34) is connected to the bearing platform (13), and the adjustment motor (31) and the adjustment cylinder (34) are respectively connected to a controller; The bearing platform (13) is installed in the vacuum chamber (12) via a support rod, the bearing platform (13) is connected to the support rod via a bearing, a bearing groove (131) is arranged above the bearing platform (13), an isolation bearing (132) is arranged in the middle of the outside of the bearing platform (13), the isolation bearing (132) is embedded in the bearing platform (13), a barrier film (133) is installed outside the isolation bearing (132), and the other end of the barrier film (133) is connected to the base (122).

2. The thin film deposition equipment based on target consumption automatic compensation function according to claim 1, characterized in that: A partition (15) is arranged above the vacuum chamber (12), the drive motor (14) is mounted on the partition (15), a drive slot (151) is provided on the partition (15), a drive disk (141) is mounted on the output end of the drive motor (14), the drive disk (141) is located inside the drive slot (151), a plurality of groups of drive magnets are arranged on the drive disk (141), and the drive magnets cooperate with the target block (5).

3. The thin film deposition equipment based on target consumption automatic compensation function according to claim 2, characterized in that: The target block (5) is provided with a mounting groove (51), a matching disk (52) is installed inside the mounting groove (51), the matching disk (52) and the driving disk (141) are matched with each other, and the matching disk (52) is provided with a plurality of groups of matching magnets, and the matching magnets and the driving magnets are matched with each other.

4. The thin film deposition equipment based on target consumption automatic compensation function according to claim 3, characterized in that: The S-pole orientation and N-pole orientation of the driving magnets are arranged alternately on the driving disk (141), and the S-pole orientation and base orientation of the matching magnets are arranged alternately on the matching disk (52).

5. The thin film deposition device based on the target consumption automatic compensation function according to claim 4, characterized in that: The target limiting assembly (2) comprises a plurality of fixed rods (21), the bottom of the fixed rods (21) being provided with grooves, a limiting rod (22) being mounted between the grooves via bearings, a limiting cylinder (23) being mounted inside the fixed rods (21), the output end of the limiting cylinder (23) being matched with the limiting rod (22), a groove being provided on a surface of the limiting rod (22) in contact with the target block (5), a ball (221) being arranged inside the groove, and the ball (221) being in contact with the target block (5).

6. The thin film deposition equipment based on target consumption automatic compensation function according to claim 5, characterized in that: The gas supply assembly (4) comprises a gas supply tank (41) and a vacuum pump (42); the gas supply tank (41) is installed inside the box (11); a flow sensor (43) is installed at the output end of the gas supply tank (41); the output end of the gas supply tank (41) is connected to the vacuum chamber (12); the vacuum pump (42) is connected to the vacuum chamber (12); and the gas supply tank (41) and the vacuum pump (42) are respectively connected to a controller.

7. The thin film deposition device based on the target consumption automatic compensation function according to claim 6, characterized in that: The detection assembly (6) comprises two groups of limit plates (61), an X-ray diffractometer (62) is installed between the two groups of limit plates (61), the X-ray diffractometer (62) is installed between the two groups of limit plates (61) via bearings, an adjustment motor is installed outside the limit plates (61), the adjustment motor is connected to the X-ray diffractometer (62), and the X-ray diffractometer (62) is connected to a controller.

8. The thin film deposition device based on the target consumption automatic compensation function according to claim 7, characterized in that: An observation window and a control panel are arranged outside the box (11); the observation window is capable of observing the vacuum chamber (12); the control panel is connected to a controller; and the controller is mounted at the bottom of the box (11).

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