Device self-heating calculation and circuit simulation method and computer program product

Abstract

A device self-heating calculation method, a circuit simulation method and a computer program product are applied to the technical field of circuit simulation, and the device self-heating calculation method comprises the following steps: obtaining a thermal model and thermal model parameters of a to-be-simulated electronic device; obtaining the current temperature and the current device simulation power, and obtaining a self-heating analysis model of the to-be-simulated electronic device based on the current temperature, the current device simulation power, the thermal model and the thermal model parameters; determining the current self-heating initial temperature and the current simulation duration of the to-be-simulated electronic device, and obtaining the self-heating initial temperature of the to-be-simulated electronic device under the conditions of the thermal model parameters, the current device simulation power and the current self-heating initial temperature according to the self-heating analysis model. The current temperature reaches the current self-heating simulation temperature after the current simulation duration. The self-heating of the electronic device to be simulated is calculated according to the self-heating analysis model, which is equivalent to the calculation of self-heating simulation based on time evolution, so that the simulation calculation amount is reduced.

Description

Technical Field

[0001] The present application relates to the field of circuit simulation technology, and in particular to a device self-heating calculation, a circuit simulation method and a computer program product. Background Art

[0002] The phenomenon that the Joule heat generated by semiconductor devices during operation causes the local temperature to rise is called the self-heating effect. For example, in a field effect transistor, due to the externally applied source-drain voltage, a strong electric field is generated in the channel and drain regions of the device. Under the influence of this electric field, the carriers are accelerated and drift to the drain to form the device current. However, during the drift of carriers, they inevitably collide with the phonons generated by the lattice vibration, causing the lattice temperature to rise. Since the carrier transport process is naturally accompanied by the self-heating effect, the self-heating effect of the device cannot be completely eliminated, and the self-heating effect can only be suppressed by improving the structure or process.

[0003] In this regard, with the rapid increase in the integration density of semiconductor devices, quickly and accurately evaluating the impact of the self-heating effect of devices on the performance of devices and even circuit levels has become a key issue in circuit thermal management. Among them, circuit-level self-heating simulation includes analyzing the steady-state self-heating temperature and transient self-heating temperature rise or fall of the device under working conditions.

[0004] In the current technical solution, the self-heating calculation of the device is usually performed based on the sub-circuit of the device, that is, after extracting the thermal parameters such as the thermal resistance and thermal capacitance of the device, a new sub-circuit is created for each device in the circuit for simulation, and then the self-heating of each device is calculated in real time based on the temperature formula according to the current multiple electrical parameters of the device. The real-time self-heating calculation based on the sub-circuit is not only computationally intensive and inefficient, but these newly introduced sub-circuits will introduce hot nodes in the circuit, which often leads to a serious reduction in the speed of circuit simulation. In this regard, a new technical solution is needed. Summary of the invention

[0005] The main technical problem solved by the present application is the low efficiency of the self-heating simulation of the device.

[0006] According to the first aspect, an embodiment provides a method for calculating device self-heating, including: Acquire a thermal model of the electronic device to be simulated, and thermal model parameters of the electronic device to be simulated under the thermal model; Obtaining the current temperature and the current device simulation power of the electronic device to be simulated, and obtaining a self-heating analysis model of the electronic device to be simulated based on the current temperature, the current device simulation power, the thermal model and the thermal model parameters, wherein the self-heating analysis model is used to characterize the functional relationship between the thermal model parameters, the device simulation power, the simulation time and the self-heating initial temperature of the electronic device to be simulated and the self-heating simulation temperature reached by the electronic device to be simulated under the condition of the thermal model; Determine the current self-heating initial temperature and the current simulation duration of the electronic device to be simulated, and obtain, based on the self-heating analysis model, the current self-heating simulation temperature reached by the current temperature of the electronic device to be simulated after the current simulation duration under the conditions of the thermal model parameters, the current device simulation power and the current self-heating initial temperature.

[0007] In some embodiments, the step of obtaining the self-heating analysis model of the electronic device to be simulated based on the current temperature, the current device simulation power, the thermal model and the thermal model parameters includes: Obtaining a steady-state temperature of the electronic device to be simulated at the current device simulation power based on the current device simulation power and the thermal model parameters, and determining a magnitude between the current temperature and the steady-state temperature; If the current temperature is lower than the steady-state temperature, obtaining a self-heating analysis model of the temperature rise of the electronic device to be simulated based on the thermal model; and / or, If the current temperature is greater than the steady-state temperature, a self-heating analysis model of cooling the electronic device to be simulated is obtained based on the thermal model.

[0008] In some embodiments, when a self-heating analysis model of the temperature rise of the electronic device to be simulated is obtained based on the thermal model, the current self-heating initial temperature of the electronic device to be simulated is a preset constant value; wherein the current temperature is greater than or equal to the current self-heating initial temperature.

[0009] In some embodiments, obtaining the current self-heating simulation temperature according to the temperature-increasing self-heating analysis model includes: Based on the temperature-raising self-heating analysis model, obtaining the equivalent simulation time required for the electronic device to be simulated to heat up from the current self-heating initial temperature to the current temperature under the conditions of the thermal model parameters, the current device simulation power, the current self-heating initial temperature and the current temperature, and adding the current simulation time to the equivalent simulation time to obtain the target simulation time; According to the temperature rising self-heating analysis model, the current self-heating simulation temperature reached by the electronic device to be simulated after the target simulation time by heating up from the current temperature is obtained under the conditions of the thermal model parameters, the current device simulation power and the current self-heating initial temperature.

[0010] In some embodiments, when a self-heating analysis model of cooling the electronic device to be simulated is obtained based on the thermal model, the current self-heating initial temperature of the electronic device to be simulated is the current temperature.

[0011] In some embodiments, obtaining the current self-heating simulation temperature according to the cooling self-heating analysis model includes: According to the cooling self-heating analysis model, the current self-heating simulation temperature of the electronic device to be simulated is obtained by cooling down from the current temperature after the current simulation time under the conditions of the thermal model parameters, the current device simulation power and the current temperature.

[0012] In some embodiments, the electronic device to be simulated includes a semiconductor device; wherein the semiconductor device includes a fin field effect transistor and / or a gate-all-around field effect transistor.

[0013] In some embodiments, the thermal model includes a single-order RC thermal network and / or a multi-order RC thermal network; wherein the thermal model parameters of the thermal model include an equivalent thermal capacitance value and an equivalent thermal resistance value of the electronic device to be simulated.

[0014] According to the second aspect, an embodiment provides a circuit simulation method, including: Acquire a circuit to be simulated, wherein the circuit to be simulated includes at least one electronic device to be simulated; Under the current simulation duration, respectively obtain the self-heating simulation temperature reached by the at least one electronic device to be simulated in the transient simulation of the previous simulation duration of the current simulation duration; wherein, based on the device self-heating calculation method as described in the first aspect, calculate the self-heating simulation temperature reached by the electronic device to be simulated in the previous simulation duration; The temperature of the corresponding electronic device to be simulated in the circuit to be simulated is updated based on each of the self-heating simulation temperatures, and a transient simulation without self-heating effect is performed based on the updated circuit to be simulated to obtain a simulation result under the current simulation duration.

[0015] According to the third aspect, an embodiment provides a computer program product, including a computer program and / or instructions, which implement the method described in the first aspect or the second aspect when executed by a processor.

[0016] According to the device self-heating calculation method, circuit simulation method and computer program product of the above-mentioned embodiment, the self-heating analysis model of the electronic device to be simulated is obtained based on the current temperature and current device simulation power of the electronic device to be simulated, as well as the thermal model and thermal model parameters, and the self-heating analysis model is used to characterize the functional relationship between the thermal model parameters, device simulation power, simulation time and self-heating initial temperature of the electronic device to be simulated and the self-heating simulation temperature reached by the electronic device to be simulated. When it is necessary to calculate the self-heating of the electronic device to be simulated, the current self-heating initial temperature and the current simulation time are determined, and the current self-heating simulation temperature reached by the current temperature after the current simulation time is obtained according to the self-heating analysis model under the conditions of the thermal model parameters, the current device simulation power and the current self-heating initial temperature of the electronic device to be simulated. Since the thermal model parameters, device simulation power, simulation time and self-heating initial temperature of the electronic device to be simulated are known, calculating the self-heating of the electronic device to be simulated according to the self-heating analysis model at this time is equivalent to calculating the time evolution after the current simulation time, and the electronic device to be simulated reaches the current self-heating simulation temperature from the current temperature. Since the self-heating of the electronic device to be simulated is calculated based on the time evolution, it is only necessary to obtain the current power of the electronic device to be simulated without obtaining other electrical parameters related to self-heating, which greatly reduces the simulation calculation amount of the self-heating calculation. The time-based evolution calculation can also perform time discrete simulation based on the current simulation duration and directly obtain the final result of the current simulation duration without calculating the intermediate process of its self-heating and without additionally establishing a sub-circuit of the electronic device to be simulated, so as to further reduce the simulation calculation amount, thereby improving the efficiency of the self-heating simulation and reducing the time consumption of the self-heating calculation. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A schematic diagram of a flow chart of a method for calculating device self-heating according to an embodiment; Figure 2 A schematic diagram of a flow chart of a circuit simulation method according to an embodiment; Figure 3 is a schematic diagram of a thermal model of an embodiment; Figure 4 A calculation schematic diagram of a temperature-raising self-heating analysis model according to an embodiment; Figure 5 A calculation schematic diagram of a temperature-raising self-heating analysis model of another embodiment; Figure 6 A schematic diagram of calculation of a cooling self-heating analysis model according to an embodiment; Figure 7 A schematic diagram of simulation results of an embodiment. DETAILED DESCRIPTION

[0018] The present application is further described in detail below by specific embodiments in conjunction with the accompanying drawings. Wherein similar elements in different embodiments use associated similar element numbers. In the following embodiments, many detailed descriptions are intended to enable the present application to be better understood. However, those skilled in the art can easily recognize that some of the features can be omitted in different situations, or can be replaced by other elements, materials, and methods. In some cases, some operations related to the present application are not shown or described in the specification, in order to avoid the core part of the present application being overwhelmed by too much description, and for those skilled in the art, it is not necessary to describe these related operations in detail, and the related operations can be fully understood according to the description in the specification and the general technical knowledge in the art.

[0019] In addition, the features, operations or characteristics described in the specification can be combined in any appropriate manner to form various implementations. At the same time, the steps or actions in the method description can also be interchanged or adjusted in a manner that is obvious to those skilled in the art. Therefore, the various sequences in the specification and the drawings are only for the purpose of clearly describing a certain embodiment and are not meant to be a required sequence, unless otherwise specified that a certain sequence must be followed.

[0020] The serial numbers assigned to the components herein, such as "first", "second", etc., are only used to distinguish the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in this application, unless otherwise specified, include direct and indirect connections (couplings).

[0021] In some embodiments of the present application, a self-heating analysis model of the electronic device to be simulated is obtained based on a thermal model of the electronic device to be simulated, and at the current temperature and the current device simulation power, the self-heating simulation temperature after the current simulation time is obtained according to the self-heating analysis model based on a time evolution method. Since the self-heating simulation temperature of the electronic device to be simulated is calculated based on a time evolution method, firstly, it is only necessary to obtain the current power of the electronic device to be simulated without obtaining other electrical parameters related to self-heating, and secondly, a discrete self-heating simulation can be performed based on the current simulation time, and the final result of the current simulation time can be directly obtained without calculating the intermediate process of its self-heating, and without additionally establishing a sub-circuit of the electronic device to be simulated, thereby reducing the amount of simulation calculations and improving the efficiency of the self-heating simulation.

[0022] In some embodiments, a device self-heating calculation method is provided, which is used to calculate the self-heating temperature of the electronic device to be simulated during the circuit simulation process, so as to accurately evaluate the relevant performance of the electronic device to be simulated and the simulation circuit. Figure 1 , the device self-heating calculation method includes the following steps: Step 100: Obtain a thermal model and thermal model parameters of an electronic device to be simulated.

[0023] Electronic devices usually generate Joule heat during operation, causing their local temperature to rise, and some performance of electronic devices is related to their temperature, so it is necessary to calculate the self-heating of electronic devices to accurately simulate the circuit. The thermal model is a model specifically used to simulate thermal behavior in electronic circuits, which can be used to calculate the self-heating of electronic devices. Therefore, it is necessary to first obtain the thermal model of the electronic device to be simulated, as well as the thermal model parameters of the electronic device to be simulated under the thermal model. In some embodiments, different thermal models can be selected according to different electronic devices to be simulated, or the same thermal model can be selected as long as it can be used to calculate the self-heating of the electronic device to be simulated.

[0024] In some embodiments, the thermal model may adopt a single-order RC thermal network or a multi-order RC thermal network. The thermal model parameters of the thermal model include the equivalent thermal capacitance and equivalent thermal resistance of the electronic device to be simulated. The equivalent thermal capacitance can usually characterize the heating or cooling rate of the electronic device to be simulated, and the equivalent thermal resistance can usually characterize the heating range or cooling range of the electronic device to be simulated. Among them, the single-order RC thermal network includes the equivalent thermal capacitance and equivalent thermal resistance in parallel, while the multi-order RC thermal network includes multiple single-order RC thermal networks in series. Both can be used to reflect the heating and cooling process of the electronic device to be simulated during operation. For example, please refer to Figure 3 , which represents a single-stage RC thermal network corresponding to a field effect transistor, where g, s, d are the gate, source and drain of the field effect transistor respectively, and T is the temperature.

[0025] In some embodiments, the electronic device to be simulated includes a semiconductor device, wherein the semiconductor device includes a fin field effect transistor (FinFET) and a gate-all-around field effect transistor (GAAFET). For example, different device crystal orientations in advanced process FinFET devices lead to different defect densities on the gate top and gate sidewalls, and different carrier energy distributions, which adds challenges to device reliability analysis and characterization. Similarly, the contact area between the channel and substrate of the FinFET device is much smaller than that of the traditional planar tube process, making the heat dissipation path of the device more complicated, thereby exacerbating the self-heating effect. Therefore, thermal evaluation and thermal management solutions for three-dimensional structure devices under advanced processes are particularly important.

[0026] Step 200: Obtain a self-heating analysis model of the electronic device to be simulated based on the current temperature of the electronic device to be simulated, the current device simulation power, the thermal model and thermal model parameters.

[0027] In some embodiments, the steady-state temperature of the electronic device to be simulated at the current device simulation power is first obtained based on the current device simulation power and the thermal model parameters. Since the temperature of the electronic device to be simulated is mainly determined by the device simulation power of the electronic device to be simulated during the time evolution, when the device simulation power is determined, the electronic device to be simulated will eventually reach the steady-state temperature at the device simulation power as time evolves, and the steady-state temperature is equal to the product of the device simulation power and the equivalent thermal resistance value, that is, the steady-state temperature at the current device simulation power. ,in Simulate power for the current device, is the equivalent thermal resistance value of the thermal model.

[0028] Then, the current temperature of the electronic device to be simulated is obtained, and the magnitude of the current temperature and the steady-state temperature is determined. If the current temperature is lower than the steady-state temperature, it means that under the current device simulation power, as time goes by, the electronic device to be simulated will be in a state of heating up, and will be heated from the current temperature to the steady-state temperature. Conversely, if the current temperature is higher than the steady-state temperature, it means that under the current device simulation power, as time goes by, the electronic device to be simulated will be in a state of cooling down, and will be cooled from the current temperature to the steady-state temperature.

[0029] In some embodiments, if the current temperature is lower than the steady-state temperature, a self-heating analysis model of the temperature rise of the electronic device to be simulated is obtained based on the thermal model. In some embodiments, if the current temperature is higher than the steady-state temperature, a self-heating analysis model of the temperature drop of the electronic device to be simulated is obtained based on the thermal model. After the thermal model is determined, based on the time evolution, its self-heating analysis model has a known corresponding relationship with the thermal model.

[0030] In some embodiments, when a self-heating analysis model of the temperature rise of an electronic device to be simulated is obtained based on a thermal model, the initial self-heating temperature of the electronic device to be simulated is a preset constant value, which can be selected according to the device or simulation situation, and the current temperature is greater than or equal to the initial self-heating temperature.

[0031] In some embodiments, when the thermal model is a single-order RC thermal network, the specific self-heating analysis model of the temperature rise of the electronic device to be simulated is: ; ; = * ; in, The self-heating simulation temperature of the self-heating analysis model representing the temperature rise, represents the initial temperature of self-heating of the electronic device to be simulated, Indicates the simulation duration, is the equivalent heat capacity of the thermal model, Represents the current device simulation power; where, is the time constant corresponding to the initial temperature of self-heating, and The function is understood as The inverse of a function.

[0032] From the above, we can see that when the simulation time is When it is equal to 0, the self-heating simulation temperature is the self-heating initial temperature , as the simulation time increases The self-heating simulation temperature increases from the initial temperature of self-heating to It starts to increase gradually and gets closer to the steady-state temperature.

[0033] In some embodiments, when the initial temperature of the self-heating of the electronic device to be simulated is 0, the self-heating analysis model of the temperature rise of the electronic device to be simulated can be simplified as follows: ; In some embodiments, when a self-heating analysis model for cooling an electronic device to be simulated is obtained based on a thermal model, the current self-heating initial temperature of the electronic device to be simulated is the current temperature. In some embodiments, the current self-heating initial temperature of the electronic device to be simulated may also be the maximum temperature that can be reached during the simulation process.

[0034] In some embodiments, when the thermal model is a single-order RC thermal network, the specific self-heating analysis model of the electronic device to be simulated for cooling is: ; = * ; in, The self-heating simulation temperature of the self-heating analytical model representing the cooling, Indicates the current temperature.

[0035] From the above, we can see that when the simulation time is When it is equal to 0, the self-heating simulation temperature is the current temperature , as the simulation time increases The self-heating simulation temperature increases from the current temperature It starts to decrease gradually and gets closer to the steady-state temperature.

[0036] In some embodiments, for simulated electronic devices, when different thermal models are selected, different self-heating analysis models can be obtained based on the thermal model, all of which can be used to characterize the temperature changes of the simulated electronic devices over time when the device simulation power and the initial self-heating temperature are known.

[0037] Step 300: Calculate the self-heating simulation temperature of the electronic device to be simulated based on the self-heating analysis model.

[0038] In some embodiments, when calculating the self-heating simulation temperature of the electronic device to be simulated based on the temperature-raising self-heating analysis model, the equivalent simulation time required for the electronic device to be simulated to heat up from the current self-heating initial temperature to the current temperature under the conditions of the thermal model parameters, the current device simulation power, the current self-heating initial temperature and the current temperature is first obtained based on the temperature-raising self-heating analysis model. In some embodiments, the inverse function of the simulation time corresponding to the self-heating simulation temperature can be obtained based on the temperature-raising self-heating analysis model, so that when the current temperature is known, the corresponding equivalent simulation time can be calculated, that is: ; in, represents the equivalent simulation time, for The inverse function of .

[0039] In this embodiment, since the temperature rise self-heating analysis model is a calculation process based on time evolution, when the electronic device to be simulated is at the current temperature, the time required for the electronic device to be simulated to rise from the initial self-heating temperature to the current temperature under the temperature rise self-heating analysis model is first obtained, which is the equivalent simulation time corresponding to the current temperature.

[0040] Then, the equivalent simulation time is increased by the current simulation time to obtain the target simulation time, that is, the current simulation time is continued to be simulated on the basis of the equivalent simulation time, and the current self-heating simulation temperature reached by the current temperature rise after the target simulation time is obtained according to the temperature rise self-heating analysis model of the electronic device to be simulated under the conditions of thermal model parameters, current device simulation power and current self-heating initial temperature, so as to obtain the self-heating calculation result of the current simulation time, that is: ; in, is the current self-heating simulation temperature, is the current simulation duration. For example, refer to Figure 4 , where the previous simulation time is t1, the previous simulation power is P1, the current simulation time is t2, and the current simulation power is P2. The equivalent simulation time is calculated. Since the current simulation power is less than the previous simulation power, the equivalent simulation time is greater than the previous simulation time. For example, refer to Figure 5 , where the previous simulation time is t1, the simulation power is P1, the current simulation time is t2, and the current simulation power is P2, The equivalent simulation time is calculated. Since the current simulation power is greater than the previous simulation power, the equivalent simulation time is less than the previous simulation time.

[0041] In some embodiments, when the self-heating simulation temperature of an electronic device to be simulated is calculated based on a cooling self-heating analysis model, and the current self-heating initial temperature of the electronic device to be simulated is the current temperature, the current self-heating simulation temperature of the electronic device to be simulated is obtained directly according to the cooling self-heating analysis model under the conditions of the thermal model parameters, the current device simulation power and the current temperature, after the current simulation time has passed and the temperature is reduced from the current temperature, that is.

[0042] ; For example, see Figure 6 , where the previous simulation time is t1, the simulation power is P1, the current simulation time is t2, and the current simulation power is P2. Since the current simulation power is less than the current simulation time and the current temperature is greater than the steady-state temperature under the current simulation power, the electronic device to be simulated begins to cool down.

[0043] In the above embodiment, the thermal model of the electronic device to be simulated is first obtained, and the corresponding self-heating analysis model is obtained based on the thermal model. After determining the current self-heating initial temperature and the current simulation duration, the current self-heating simulation temperature reached by the current temperature after the current simulation duration is calculated by the self-heating analysis model based on the time evolution, so there is no need to obtain multiple electrical parameters of the simulated electronic device, nor is there a need to perform complex calculations based on the temperature formula based on multiple electrical parameters, thereby reducing the amount of simulation calculations for self-heating calculations, improving the efficiency of self-heating simulations, and reducing the time consumption of self-heating calculations. In addition, the analytical calculation process of the above self-heating analysis model does not require the establishment of additional sub-circuits, thereby avoiding the introduction of hot nodes. At the same time, the time-based evolution calculation can also enable time-discrete simulation based on the current simulation duration, and directly obtain the final result of the current simulation duration without calculating the intermediate process, further improving the efficiency of temperature calculations.

[0044] The above are some explanations on the self-heating calculation method for simulated electronic devices. The following is a specific explanation of the circuit simulation process.

[0045] Some embodiments provide a circuit simulation method, which can be used to simulate a circuit to be simulated to obtain a performance evaluation of the circuit to be simulated. Figure 2 , the circuit simulation method may include the following steps: Step 110: Acquire a circuit to be simulated, where the circuit to be simulated includes at least one electronic device to be simulated.

[0046] In some embodiments, the circuit to be simulated may be a single electronic device to be simulated, or may be a circuit composed of multiple electronic devices to be simulated.

[0047] Step 210: Obtain the self-heating simulation temperature reached by the electronic device to be simulated in the transient simulation of the previous simulation duration.

[0048] Step 310: updating the temperature of the electronic device to be simulated based on the self-heating simulation temperature, and performing a transient simulation without self-heating effect to obtain a simulation result under the current simulation duration.

[0049] In some embodiments, the circuit to be simulated can be simulated based on discrete time, for example, the last simulation duration and the current simulation duration are both a step simulation duration, and when the last simulation duration is performed, a transient simulation without self-heating effect can be performed, and the self-heating simulation temperature reached by each electronic device to be simulated in the last simulation duration is calculated based on the above-mentioned device self-heating calculation method, so that before the current simulation duration is performed, the temperature of the corresponding electronic device to be simulated is updated based on the self-heating simulation temperature reached in the last simulation duration, and a transient simulation without self-heating effect is performed based on the updated circuit to be simulated to obtain the simulation result under the current simulation duration, so as to obtain an evaluation of the aging of circuit performance due to the self-heating effect. Among them, the transient simulation without self-heating effect is performed at the current simulation time, that is, the simulation without considering the self-heating effect, and the temperature of the device is updated based on the self-heating simulation temperature calculated in the current simulation time at the next simulation time, so as to also realize the simulation of the self-heating effect.

[0050] In some embodiments, the self-heating simulation temperature reached by each electronic device to be simulated during the current simulation duration can be calculated based on the above-mentioned device self-heating calculation method, so as to update the temperature of each electronic device to be simulated before simulating for the next simulation duration.

[0051] Please refer to Figure 7 , which is the voltage simulation process of the electronic device to be simulated, where the darker black line is the simulation without self-heating effect, the lighter gray line is the simulation result of the subcircuit in the prior art, and the dotted line is the simulation result based on time evolution in this application. It can be seen that the simulation results of this application are consistent with the simulation results of the prior art, and therefore have a better simulation effect.

[0052] In the above embodiment, since the temperature is first updated based on the self-heating simulation temperature reached by the electronic device to be simulated in the previous simulation time when the simulation of the current simulation duration is performed, and then the transient simulation without self-heating effect is performed, since the simulation of the current simulation duration is a transient simulation without self-heating effect, the calculation acceleration of the temperature of each device in the circuit can be achieved, which provides a powerful solution for the self-heating effect simulation of large-scale circuits, making it possible to quickly evaluate the self-heating effect of large-scale integrated circuits. Moreover, the simulation is performed after the temperature of the electronic device to be simulated is updated, so even if the transient simulation without self-heating effect is performed, the self-heating effect can also be realized based on the electronic device to be simulated after the temperature update to evaluate the aging of the circuit performance.

[0053] In some embodiments, during simulation, relevant simulation parameters of each electronic device to be simulated can be obtained based on some standard device databases. For example, parameters such as current, voltage, capacitance, charge, and conductivity can be obtained based on a standard device model interface, and thermal model parameters of the simulated electronic device can also be obtained. At the same time, when the temperature of the electronic device to be simulated changes, parameters related to the temperature change can also be updated based on the device database according to the temperature change, such as updating the channel carrier mobility of a semiconductor device, updating the current of the device, etc., thereby realizing the self-heating effect to perform aging evaluation on circuit performance.

[0054] In some embodiments, a computer program product is provided, including a computer program and / or instructions, which implement the above-mentioned device self-heating calculation method or circuit simulation method when the computer program and / or instructions are executed by a processor. In some embodiments, the computer program product can be embedded in the model interface of the circuit simulator to implement the device self-heating calculation method or circuit simulation method. In some embodiments, the operation of the computer program product can also be implemented based on other methods.

[0055] Those skilled in the art will appreciate that all or part of the functions of the various methods in the above-mentioned embodiments can be implemented by hardware or by computer programs. When all or part of the functions in the above-mentioned embodiments are implemented by computer programs, the program can be stored in a computer-readable storage medium, and the storage medium can include: read-only memory, random access memory, disk, optical disk, hard disk, etc., and the program is executed by a computer to implement the above-mentioned functions. For example, the program is stored in the memory of the device, and when the program in the memory is executed by the processor, all or part of the above-mentioned functions can be implemented. In addition, when all or part of the functions in the above-mentioned embodiments are implemented by computer programs, the program can also be stored in a storage medium such as a server, another computer, disk, optical disk, flash disk or mobile hard disk, and can be downloaded or copied and saved in the memory of the local device, or the system of the local device is updated, and when the program in the memory is executed by the processor, all or part of the functions in the above-mentioned embodiments can be implemented.

[0056] The above specific examples are used to illustrate the present application, which is only used to help understand the present application and is not intended to limit the present application. For technicians in the technical field to which the present application belongs, they can also make some simple deductions, deformations or substitutions based on the ideas of the present application.

Claims

1. A method for calculating device self-heating, characterized in that: include: Acquire a thermal model of the electronic device to be simulated, and thermal model parameters of the electronic device to be simulated under the thermal model; Obtaining the current temperature and the current device simulation power of the electronic device to be simulated, and obtaining a self-heating analysis model of the electronic device to be simulated based on the current temperature, the current device simulation power, the thermal model and the thermal model parameters, wherein the self-heating analysis model is used to characterize the functional relationship between the thermal model parameters, the device simulation power, the simulation time and the self-heating initial temperature of the electronic device to be simulated and the self-heating simulation temperature reached by the electronic device to be simulated under the condition of the thermal model; Determine the current self-heating initial temperature and the current simulation duration of the electronic device to be simulated, and obtain, based on the self-heating analysis model, the current self-heating simulation temperature reached by the current temperature of the electronic device to be simulated after the current simulation duration under the conditions of the thermal model parameters, the current device simulation power and the current self-heating initial temperature.

2. The device self-heating calculation method according to claim 1, characterized in that: The step of obtaining the self-heating analysis model of the electronic device to be simulated based on the current temperature, the current device simulation power, the thermal model and the thermal model parameters includes: Obtaining a steady-state temperature of the electronic device to be simulated at the current device simulation power based on the current device simulation power and the thermal model parameters, and determining a magnitude between the current temperature and the steady-state temperature; If the current temperature is lower than the steady-state temperature, obtaining a self-heating analysis model of the temperature rise of the electronic device to be simulated based on the thermal model; and / or, If the current temperature is greater than the steady-state temperature, a self-heating analysis model of cooling the electronic device to be simulated is obtained based on the thermal model.

3. The device self-heating calculation method according to claim 2, characterized in that: When the self-heating analysis model of the temperature rise of the electronic device to be simulated is obtained based on the thermal model, the current self-heating initial temperature of the electronic device to be simulated is a preset constant value; wherein the current temperature is greater than or equal to the current self-heating initial temperature.

4. The device self-heating calculation method according to claim 2 or 3, obtaining the current self-heating simulation temperature according to the temperature-increasing self-heating analysis model, comprising: Based on the temperature-raising self-heating analysis model, obtaining the equivalent simulation time required for the electronic device to be simulated to heat up from the current self-heating initial temperature to the current temperature under the conditions of the thermal model parameters, the current device simulation power, the current self-heating initial temperature and the current temperature, and adding the current simulation time to the equivalent simulation time to obtain the target simulation time; According to the temperature rising self-heating analysis model, the current self-heating simulation temperature reached by the electronic device to be simulated after the target simulation time by heating up from the current temperature is obtained under the conditions of the thermal model parameters, the current device simulation power and the current self-heating initial temperature.

5. The device self-heating calculation method according to claim 2, characterized in that: When the self-heating analysis model of the cooling of the electronic device to be simulated is obtained based on the thermal model, the current self-heating initial temperature of the electronic device to be simulated is the current temperature.

6. The device self-heating calculation method according to claim 5, characterized in that: Obtaining the current self-heating simulation temperature according to the cooling self-heating analysis model includes: According to the cooling self-heating analysis model, the current self-heating simulation temperature of the electronic device to be simulated is obtained by cooling down from the current temperature after the current simulation time under the conditions of the thermal model parameters, the current device simulation power and the current temperature.

7. The device self-heating calculation method according to claim 1, characterized in that: The electronic device to be simulated includes a semiconductor device; wherein the semiconductor device includes a fin field effect transistor and / or a gate-all-around field effect transistor.

8. The device self-heating calculation method according to claim 1, characterized in that: The thermal model includes a single-order RC thermal network and / or a multi-order RC thermal network; wherein the thermal model parameters of the thermal model include an equivalent thermal capacitance value and an equivalent thermal resistance value of the electronic device to be simulated.

9. A circuit simulation method, characterized in that: include: Acquire a circuit to be simulated, wherein the circuit to be simulated includes at least one electronic device to be simulated; Under the current simulation duration, respectively obtain the self-heating simulation temperature reached by the at least one electronic device to be simulated in the transient simulation of the previous simulation duration of the current simulation duration; wherein, based on the device self-heating calculation method according to any one of claims 1 to 8, calculate the self-heating simulation temperature reached by the electronic device to be simulated in the previous simulation duration; The temperature of the corresponding electronic device to be simulated in the circuit to be simulated is updated based on each of the self-heating simulation temperatures, and a transient simulation without self-heating effect is performed based on the updated circuit to be simulated to obtain a simulation result under the current simulation duration.

10. A computer program product comprising a computer program and / or instructions, characterized in that: When the computer program and / or the instructions are executed by a processor, the method according to any one of claims 1 to 9 is implemented.

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