Manufacturing method of semiconductor packaging structure and semiconductor packaging structure

Abstract

The embodiment of the invention provides a manufacturing method of a semiconductor packaging structure and the semiconductor packaging structure. The manufacturing method comprises the following steps: providing a substrate; forming a blind hole in the substrate; forming a copper alloy in the blind hole; the copper alloy comprises sacrificial metal; removing sacrificial metal in the copper alloy by adopting an electrochemical dealloying method to form porous copper; the porosity of the porous copper ranges from 2% to 25%.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of semiconductor technology, and in particular to a method for manufacturing a semiconductor packaging structure and a semiconductor packaging structure. Background Art

[0002] Due to the large difference in the coefficient of thermal expansion (CTE) between the interconnection component (e.g., copper) and the substrate (e.g., glass), the CTE mismatch causes the interconnection component to fail during the subsequent chip bonding and high-temperature annealing process. For example, the expansion of the interconnection component causes abnormal overlap between the conductive via (e.g., through glass via (TGV)) of the interconnection component and the redistribution layer (RDL), reducing device reliability and causing chip failure. Summary of the invention

[0003] In view of this, embodiments of the present application provide a method for manufacturing a semiconductor package structure and a semiconductor package structure.

[0004] In a first aspect, an embodiment of the present application provides a method for manufacturing a semiconductor packaging structure, the manufacturing method comprising: providing a substrate; forming a blind hole in the substrate; forming a copper alloy in the blind hole; the copper alloy includes a sacrificial metal; using an electrochemical dealloying method to remove the sacrificial metal in the copper alloy to form porous copper; the porosity of the porous copper ranges from 2% to 25%.

[0005] In some embodiments, an electrochemical dealloying method is used to remove sacrificial metal in a copper alloy to form porous copper, including: thinning a substrate on the back side to form a first substrate; a first end of the copper alloy is flush with the front side of the first substrate, and a second end of the copper alloy is flush with the back side of the first substrate; using the copper alloy as an anode electrode, an inert material as a cathode electrode, and a corrosive solution as an electrolyte, applying a potential to the anode electrode, and performing electrolysis to remove the sacrificial metal in the copper alloy to form porous copper; the first end of the porous copper is flush with the front side of the first substrate, and the second end of the porous copper is flush with the back side of the first substrate.

[0006] In some embodiments, an electrochemical dealloying method is used to remove sacrificial metals in a copper alloy to form porous copper, including: using a copper alloy as an anode electrode, an inert material as a cathode electrode, and a corrosive solution as an electrolyte, applying a potential to the anode electrode, and performing electrolysis to remove the sacrificial metals in the copper alloy to form porous copper; the first end of the porous copper is flush with the front side of the substrate, and the second end of the porous copper is flush with the back side of the substrate; the back side of the substrate is thinned to form a second substrate; the first end of the porous copper is flush with the front side of the second substrate, and the second end of the porous copper is flush with the back side of the second substrate.

[0007] In some embodiments, a copper alloy is used as an anode electrode, an inert material is used as a cathode electrode, and a corrosive solution is used as an electrolyte. A potential is applied to the anode electrode to electrolyze and remove the sacrificial metal in the copper alloy to form porous copper, including: the copper alloy includes a copper-zirconium alloy; the copper-zirconium alloy is used as an anode electrode, platinum / graphite is used as a cathode electrode, a calomel electrode is used as a reference electrode, and a hydrochloric acid solution is used as an electrolyte; compared to the reference electrode, a first potential is applied to the anode electrode through a power supply to electrolyze and remove the sacrificial metal in the copper alloy to form porous copper; the first potential ranges from 0.6V to 1.0V; the power supply is disconnected, the porous copper is cleaned and dried, and the preparation of the porous copper is completed.

[0008] In some embodiments, a copper alloy is used as an anode electrode, an inert material is used as a cathode electrode, and a corrosive solution is used as an electrolyte. A potential is applied to the anode electrode to electrolyze and remove the sacrificial metal in the copper alloy to form porous copper, including: the copper alloy includes a copper-aluminum alloy; the copper-aluminum alloy is used as an anode electrode, platinum or graphite is used as a cathode electrode, a calomel electrode is used as a reference electrode, and a sodium chloride solution is used as an electrolyte; compared to the reference electrode, a second potential is applied to the anode electrode through a power supply to electrolyze and remove the sacrificial metal in the copper alloy to form porous copper; the second potential ranges from 0.1V to 0.5V; the power supply is disconnected, the porous copper is cleaned and dried, and the preparation of the porous copper is completed.

[0009] In some embodiments, a copper alloy is formed in a blind hole, including: depositing an adhesion layer and a seed layer in the blind hole in sequence to form a recessed space in the blind hole; filling the recessed space with the copper alloy by a magnetron sputtering process; the proportion of the sacrificial metal in the copper alloy ranges from 5% to 20%.

[0010] In some embodiments, providing a substrate includes: providing a glass substrate; forming a blind hole in the substrate, including: forming a modified area in the glass substrate by a laser induced process; and etching away the modified area to form the blind hole.

[0011] In a second aspect, an embodiment of the present application provides a semiconductor packaging structure, which includes: a substrate; porous copper, which passes through the substrate; the first end of the porous copper is flush with the front side of the substrate, and the second end of the porous copper is flush with the back side of the substrate; the porosity of the porous copper ranges from 2% to 25%.

[0012] In some embodiments, the pores of the porous copper have a pore size ranging from 50 nm to 200 nm.

[0013] In some embodiments, the expansion coefficient of the porous copper is less than 16.8×10 -6 m / K.

[0014] In each embodiment of the present application, an electrochemical dealloying method is used to remove the sacrificial metal in the copper alloy to form porous copper with a porosity ranging from 2% to 25%; the porous copper is used to realize the TGV of the vertical interconnection of the semiconductor packaging structure, which can reduce or avoid the TGV expansion of the glass substrate caused by CTE mismatch while realizing electrical interconnection, provide a buffer for the TGV expansion in the subsequent thermal annealing process, avoid abnormal overlap between the TGV and RDL of the interconnection component, and provide device reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic flow chart of a method for manufacturing a semiconductor packaging structure provided in an embodiment of the present application;

[0016] Figure 2A to Figure 2H One of the cross-sectional schematic diagrams of a manufacturing process of a semiconductor structure provided in an embodiment of the present application;

[0017] Figure 3A to Figure 3B The second cross-sectional schematic diagram of the manufacturing process of a semiconductor structure provided in an embodiment of the present application. DETAILED DESCRIPTION

[0018] The following will combine the implementation methods and drawings of this application to clearly and completely describe the technical solutions in the implementation methods of this application. The described implementation methods are only part of the implementation methods of this application, not all of the implementation methods. Based on the implementation methods in this application, all other implementation methods obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0019] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0020] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0021] Conductive vias of interconnect components, such as TGVs, can be obtained by depositing conductive materials through an electroplating process to achieve electrical interconnection of devices. However, the expansion of TGVs caused by repeated thermal annealing in subsequent processes leads to abnormal overlap between TGVs and RDLs, reducing device reliability.

[0022] The embodiment of the present application proposes a solution of using porous copper as a conductive through-hole. The porous structure of the porous copper can be used to buffer the expansion problem of copper caused by repeated thermal annealing in subsequent processes, thereby providing a solution for achieving high-performance electrical interconnection.

[0023] Figure 1 A schematic flow chart of a method for manufacturing a semiconductor packaging structure provided in an embodiment of the present application.

[0024] In a first aspect, the present invention provides a method for manufacturing a semiconductor package structure, referring to Figure 1 , the manufacturing method comprises the following steps:

[0025] Step S101, providing a substrate;

[0026] Step S102, forming a blind hole in the substrate;

[0027] Step S103, forming a copper alloy in the blind hole; the copper alloy includes a sacrificial metal;

[0028] Step S104: removing the sacrificial metal in the copper alloy by electrochemical dealloying to form porous copper; the porosity of the porous copper ranges from 2% to 25%.

[0029] Figure 2A to Figure 2H This is one of the cross-sectional schematic diagrams of a manufacturing process of a semiconductor structure provided in an embodiment of the present application.

[0030] Combine the following Figure 1 , Figure 2A to Figure 2H The manufacturing process of the semiconductor structure provided in the embodiment of the present application is described in detail.

[0031] For the convenience of describing the embodiments of the present application, the terms first direction and second direction are expressed as two orthogonal directions parallel to the substrate (or base) plane; the third direction is a direction perpendicular to the substrate (or base) plane, which can also be understood as the stacking direction of elements, components, regions, layers or parts. The first direction can be expressed as the X direction in the drawings; the second direction can be expressed as the Y direction in the drawings; and the third direction can be expressed as the Z direction in the drawings.

[0032] Step S101 is executed to provide a substrate.

[0033] In some embodiments, providing a substrate includes: providing a glass substrate; forming a blind hole in the substrate, including: forming a modified area in the glass substrate by a laser induced process; and etching away the modified area to form the blind hole.

[0034] refer to Figure 2A, the substrate may be a silicon substrate. The hole-forming technology of through silicon via (TSV) may include a silicon photolithography etching process. The substrate may also be a glass substrate 102. The material of the glass substrate includes quartz powder, strontium carbonate, barium carbonate, calcium carbonate, aluminum oxide, magnesium oxide or zinc oxide. The hole-forming technology of through glass hole may include a sandblasting process, a photosensitive glass process, a focused power generation process, a plasma etching process, a laser ablation process, an electrochemical discharge machining process or a laser induced etching process. The hole-forming technology of through glass hole needs to meet a series of requirements such as high speed, high precision, narrow pitch, smooth sidewall, good verticality and low cost.

[0035] Compared with TSV, the advantages of TGV are mainly reflected in: 1. Good high-frequency electrical properties. The dielectric constant of the glass substrate material is only about 1 / 3 of that of the silicon substrate material, which greatly reduces substrate loss and parasitic effects; 2. Large-size ultra-thin substrates of glass substrates are easy to obtain; 3. The process flow of glass through-hole drilling technology is simple.

[0036] In the following description, a laser induced etching process is used to form a through-glass hole in a glass substrate as an example for detailed description, but the exemplary description is not intended to limit the embodiments of the present application.

[0037] Step S102 is executed to form a blind hole.

[0038] refer to Figure 2B , on the front side S1 of the glass substrate 102, the glass substrate 102 is subjected to a laser induced process to form a modified region 104 in the glass substrate 102. In some embodiments, the modified region 104 extends into the glass substrate 102. In an alternative embodiment, the modified region 104 may penetrate the glass substrate 102 (in this case Figure 2B (not shown). The front side S1 and the back side S2 of the glass substrate 102 are two opposite sides of the glass substrate 102 along the thickness direction thereof.

[0039] refer to Figure 2C , the glass substrate 102 treated by the laser induced process is placed in an etching solution for cleaning, and at least a portion of the modified area 104 is removed to form a blind hole T1 array. The etching solution can be a solution containing hydrogen fluoride (HF). The blind hole T1 extends into the glass substrate 102 and does not penetrate the glass substrate 102. In some embodiments, when the modified area 104 extends into the glass substrate 102, removing all or part of the modified area 104 can form a blind hole T1 array. Figure 2C In an optional embodiment, the modified area 104 penetrates the glass substrate 102 ( Figure 2B (not shown), the process parameters for cleaning in the etching solution, such as etching solution concentration, etching time, etc., can be adjusted, and removing part of the modified area 104 can also form Figure 2C Blind hole T1 shown.

[0040] In some embodiments, forming a copper alloy in a blind hole includes: depositing an adhesion layer and a seed layer in the blind hole in sequence to form a recessed space in the blind hole; filling the recessed space with a copper alloy by a magnetron sputtering process; and the proportion of the sacrificial metal in the copper alloy ranges from 5% to 20%. The term proportion can be either atomic percentage (at%) or weight percentage (wt%).

[0041] refer to Figure 2D and Figure 2E , an adhesion layer 106, a seed layer 108 and a recessed space T2 are sequentially formed in the blind hole T1 by a deposition process. The material of the adhesion layer 106 includes titanium nitride (TiN) or tantalum nitride (TaN). The material of the seed layer 108 includes a copper seed. In various embodiments of the present application, the deposition process includes but is not limited to a physical vapor deposition (PVD) process and a chemical vapor deposition (CVD) process. Exemplarily, an adhesion layer 106 and a seed layer 108 are sequentially formed in the blind hole T1 by a CVD process. The recessed space T2 can be understood as the remaining space after the adhesion layer 106 and the seed layer 108 are sequentially formed in the blind hole T1.

[0042] refer to Figure 2E and Figure 2F , a copper alloy 110 is formed in the recessed space T2 by a deposition process; the copper alloy 110 includes a sacrificial metal. In some embodiments, the sacrificial metal may include zirconium, aluminum, cobalt, nickel or silver. Exemplarily, the copper alloy is deposited by a magnetron sputtering process, and the sputtering conditions are adjusted to obtain copper-X alloys of different proportions. The optimized deposition conditions include sputtering power, target mass / proportion, etc., to obtain a copper-X metal alloy, where "X" indicates a sacrificial metal.

[0043] In some embodiments, the proportion of the sacrificial metal in the copper alloy 110 is in the range of 5% to 20%, so as to ensure that the porous copper 112 formed after removing the sacrificial metal (see Figure 2G ) structure. Exemplarily, the proportion of the sacrificial metal in the copper alloy 110 is 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18% or 19%.

[0044] In some embodiments, an electrochemical dealloying method is used to remove the sacrificial metal in the copper alloy 110 to form the porous copper 112, including: Figure 2F and Figure 2G, using the copper alloy as the anode electrode, the inert material as the cathode electrode, and the corrosive solution as the electrolyte, applying a potential to the anode electrode, electrolyzing and removing the sacrificial metal in the copper alloy to form porous copper; the first end of the porous copper is flush with the front side S1 of the substrate, and the second end of the porous copper is flush with the back side S2 of the substrate; reference Figure 2G and Figure 2H , the back side of the substrate is thinned to form a second substrate 1022 ; the first end of the porous copper 112 is flush with the front side S1 of the second substrate 1022 , and the second end of the porous copper 112 is flush with the back side S3 of the second substrate 1022 .

[0045] Through the electrochemical dealloying method, the sacrificial metal in the copper alloy is selectively dissolved by utilizing the inconsistency of the redox potentials of different metals, thereby achieving porous copper filling.

[0046] In some embodiments, an electrochemical workstation can be used, with the copper alloy as the anode electrode, platinum as the cathode electrode, the calomel electrode as the reference electrode, and the corrosion solution as the electrolyte. The optimal corrosion potential of the sacrificial metal in the copper alloy (referred to herein as the first potential / second potential) can be determined by selecting different potentials.

[0047] In some embodiments, the reaction time of the electrochemical dealloying method is positively correlated with the content of the sacrificial metal in the copper alloy. For example, the reaction time of the electrochemical dealloying method can be adjusted from 2 hours to 48 hours according to the content of the sacrificial metal in the copper alloy.

[0048] refer to Figure 2G , an electrochemical dealloying method is used to remove the sacrificial metal in the copper alloy to form porous copper 112.

[0049] In some embodiments, a copper alloy is used as an anode electrode, an inert material is used as a cathode electrode, and a corrosive solution is used as an electrolyte. A potential is applied to the anode electrode to electrolyze and remove the sacrificial metal in the copper alloy to form porous copper, including: the copper alloy includes a copper-zirconium alloy; the copper-zirconium alloy is used as an anode electrode, platinum / graphite is used as a cathode electrode, a calomel electrode is used as a reference electrode, and a hydrochloric acid solution is used as an electrolyte; compared to the reference electrode, a first potential is applied to the anode electrode through a power supply to electrolyze and remove the sacrificial metal in the copper alloy to form porous copper; the first potential ranges from 0.6V to 1.0V; the power supply is disconnected, the porous copper is cleaned and dried, and the preparation of the porous copper is completed.

[0050] Exemplarily, when the copper alloy 110 is a copper-zirconium alloy, after determining the optimal corrosion potential of the zirconium metal in the copper-zirconium alloy, the copper-zirconium alloy is used as the anode electrode, platinum is used as the cathode electrode, the calomel electrode is used as the reference electrode, and a 0.1 mol / L dilute hydrochloric acid solution is used as the electrolyte; compared with the reference electrode, a first potential of 0.6V to 1.0V (the optimal corrosion potential of the zirconium metal in the copper-zirconium alloy) is applied to the anode electrode by a power supply to electrolyze and remove the zirconium metal in the copper-zirconium alloy; the power supply is disconnected, and the copper-zirconium alloy treated by the electrochemical dealloying method is cleaned with pure water, and placed in a drying oven for drying to obtain porous copper.

[0051] In some embodiments, a copper alloy is used as an anode electrode, an inert material is used as a cathode electrode, and a corrosive solution is used as an electrolyte. A potential is applied to the anode electrode to electrolyze and remove the sacrificial metal in the copper alloy to form porous copper, including: the copper alloy includes a copper-aluminum alloy; the copper-aluminum alloy is used as an anode electrode, platinum or graphite is used as a cathode electrode, a calomel electrode is used as a reference electrode, and a sodium chloride solution is used as an electrolyte; compared to the reference electrode, a second potential is applied to the anode electrode through a power supply to electrolyze and remove the sacrificial metal in the copper alloy to form porous copper; the second potential ranges from 0.1V to 0.5V; the power supply is disconnected, the porous copper is cleaned and dried, and the preparation of the porous copper is completed.

[0052] Exemplarily, when the copper alloy 110 is a copper-aluminum alloy, after determining the optimal corrosion potential of the aluminum metal in the copper-aluminum alloy, the copper-aluminum alloy is used as the anode electrode, platinum is used as the cathode electrode, the calomel electrode is used as the reference electrode, and a 1 mol / L sodium chloride solution is used as the electrolyte; compared with the reference electrode, a second potential of 0.1V to 0.5V (the optimal corrosion potential of the aluminum metal in the copper-aluminum alloy) is applied to the anode electrode by a power supply to electrolyze and remove the aluminum metal in the copper-aluminum alloy; the power supply is disconnected, and the copper-aluminum alloy treated by the electrochemical dealloying method is cleaned with pure water, and placed in a drying oven for drying to obtain porous copper.

[0053] refer to Figure 2H On the back side S2 of the glass substrate 102, the glass substrate 102 is thinned by a back side chemical mechanical polishing (CMP) process, and one end of the thinned porous copper 112 is flush with the front side S1 of the second substrate 1022 (the thinned glass substrate 102), and the other end of the thinned porous copper 112 is flush with the back side S3 of the second substrate 1022. The thinned porous copper 112 penetrates the thinned glass substrate 102.

[0054] In some embodiments, an electrochemical dealloying method is used to remove the sacrificial metal in the copper alloy 110 to form the porous copper 112, including: Figure 2F and Figure 3A, the back side of the substrate is thinned to form a first substrate 1021; the first end of the copper alloy 110 is flush with the front side S1 of the first substrate 1021, and the second end of the copper alloy 110 is flush with the back side S4 of the first substrate 1021; Figure 3A and Figure 3B , with the copper alloy as the anode electrode, the inert material as the cathode electrode, and the corrosive solution as the electrolyte, a potential is applied to the anode electrode, and electrolysis is performed to remove the sacrificial metal in the copper alloy to form porous copper; the first end of the porous copper is flush with the front side S1 of the first substrate 1021, and the second end of the porous copper is flush with the back side S4 of the first substrate 1021.

[0055] refer to Figure 3A On the back side S2 of the glass substrate 102, the glass substrate 102 is thinned by a back side chemical mechanical polishing (CMP) process, and one end of the thinned copper alloy 110 is flush with the front side S1 of the first substrate 1021 (the thinned glass substrate 102), and the other end of the thinned copper alloy 110 is flush with the back side S4 of the first substrate 1021. The thinned copper alloy 110 penetrates the thinned glass substrate 102.

[0056] refer to Figure 3A and Figure 3B , an electrochemical dealloying method is used to remove the sacrificial metal in the copper alloy 110 to form a porous copper 112. For details, please refer to the above Figure 2G and Figure 2H The relevant instructions will not be repeated here.

[0057] Compared to Figure 2G and Figure 2H The electrochemical dealloying process shown in the figure starts from one end of the copper alloy 110 (the end flush with the front surface S1 of the second substrate 1022) and participates in the electrochemical dealloying process. Figure 3A and Figure 3B In the electrochemical dealloying method shown, the electrochemical dealloying process can be participated in from one end of the copper alloy 110 (the end flush with the front surface S1 of the first substrate 1021) and the other end (the end flush with the back surface S4 of the first substrate 1021), which can accelerate the process of electrochemical dealloying and facilitate the cleaning and drying of the copper alloy 110 treated by the electrochemical dealloying method from one end and the other end of the copper alloy 110. In some embodiments, the higher the copper content in the copper alloy, the smaller the porosity of the obtained porous copper and the weaker the temperature resistance. The lower the copper content in the copper alloy, the higher the porosity of the obtained porous copper and the stronger the temperature resistance, but the electrical properties of the obtained porous copper are affected.

[0058] In some embodiments, the potential (which can be referred to as the first potential / the second potential) during the process of removing the sacrificial metal in the copper alloy 110 by the electrochemical dealloying method will affect the pore size of the obtained porous copper. The higher the potential, the faster the demetallization speed, which may result in a larger pore size of the obtained porous copper.

[0059] In some embodiments, the porosity of the porous copper 112 ranges from 2% to 25%. Exemplarily, the porosity of the porous copper 112 is 4%, 6%, 8%, 10%, 12%, 14%, 16%, 18%, 20%, 22%, or 24%. In some embodiments, the pore size of the porous copper ranges from 50nm to 200nm. Exemplarily, the pore size of the porous copper is 60nm, 70nm, 80nm, 90nm, 100nm, 120nm, 140nm, 160nm, or 180nm. In some embodiments, the expansion coefficient of the porous copper is less than 16.8×10 -6 m / K.

[0060] Figure 2H or Figure 3B The porous copper 112 shown is used to realize the TGV of the vertical interconnection of the semiconductor packaging structure. While realizing electrical interconnection, it can reduce or avoid the TGV expansion of the glass substrate caused by CTE mismatch, provide a buffer for the TGV expansion during the subsequent thermal annealing process, avoid abnormal overlap between the TGV and RDL of the interconnection component, and improve device reliability.

[0061] In a second aspect, the present application provides a semiconductor packaging structure, referring to Figure 2H or Figure 3B The semiconductor package structure includes: a substrate; porous copper penetrating the substrate; a first end of the porous copper is flush with the front surface of the substrate, and a second end of the porous copper is flush with the back surface of the substrate; the porosity of the porous copper ranges from 2% to 25%. In the embodiment of the present application, the substrate can refer to Figure 2H The second substrate 1022 shown, or, referring to Figure 3B The first substrate 1021 is shown.

[0062] In some embodiments, the pores of the porous copper have a pore size ranging from 50 nm to 200 nm.

[0063] In some embodiments, the expansion coefficient of the porous copper is less than 16.8×10 -6 m / K.

[0064] The semiconductor packaging structure provided in the second aspect of the embodiment of the present application is similar to the semiconductor packaging structure obtained by the manufacturing method of the semiconductor packaging structure provided in the first aspect above. For the technical features not fully disclosed in the embodiment of the present application, please refer to the semiconductor packaging structure obtained by the manufacturing method of the semiconductor packaging structure in the above embodiment for understanding, and no further details will be given here.

[0065] The above description is only a preferred implementation mode of the present application, and does not limit the protection scope of the present application. All equivalent structural changes made by using the contents of the present application specification and drawings under the inventive concept of the present application, or directly / indirectly applied in other related technical fields are included in the protection scope of the present application.

Claims

1. A method for manufacturing a semiconductor packaging structure, characterized in that: include: providing a substrate; forming a blind hole in the substrate; forming a copper alloy in the blind hole; The copper alloy includes a sacrificial metal; The sacrificial metal in the copper alloy is removed by electrochemical dealloying to form porous copper; the porosity of the porous copper is in the range of 2% to 25%.

2. The manufacturing method according to claim 1, characterized in that: The method of removing the sacrificial metal in the copper alloy by an electrochemical dealloying method to form porous copper comprises: The back side of the substrate is thinned to form a first substrate; the first end of the copper alloy is flush with the front side of the first substrate, and the second end of the copper alloy is flush with the back side of the first substrate; The copper alloy is used as an anode electrode, the inert material is used as a cathode electrode, and the corrosive solution is used as an electrolyte. A potential is applied to the anode electrode to electrolyze and remove the sacrificial metal in the copper alloy to form the porous copper; the first end of the porous copper is flush with the front side of the first substrate, and the second end of the porous copper is flush with the back side of the first substrate.

3. The manufacturing method according to claim 1, characterized in that: The method of removing the sacrificial metal in the copper alloy by an electrochemical dealloying method to form porous copper comprises: The copper alloy is used as an anode electrode, the inert material is used as a cathode electrode, and the corrosive solution is used as an electrolyte. A potential is applied to the anode electrode to electrolyze and remove the sacrificial metal in the copper alloy to form the porous copper; the first end of the porous copper is flush with the front surface of the substrate, and the second end of the porous copper is flush with the back surface of the substrate; The back side of the substrate is thinned to form a second substrate; the first end of the porous copper is flush with the front side of the second substrate, and the second end of the porous copper is flush with the back side of the second substrate.

4. The manufacturing method according to claim 2 or 3, characterized in that: The copper alloy is used as an anode electrode, an inert material is used as a cathode electrode, and a corrosive solution is used as an electrolyte. A potential is applied to the anode electrode to electrolyze and remove the sacrificial metal in the copper alloy to form the porous copper, including: The copper alloy includes a copper-zirconium alloy; the copper-zirconium alloy is used as an anode electrode, platinum / graphite is used as a cathode electrode, a calomel electrode is used as a reference electrode, and a hydrochloric acid solution is used as an electrolyte; Compared with the reference electrode, a first potential is applied to the anode electrode by a power supply to electrolyze and remove the sacrificial metal in the copper alloy to form the porous copper; the first potential ranges from 0.6V to 1.0V; The power supply is disconnected, and the porous copper is cleaned and dried to complete the preparation of the porous copper.

5. The manufacturing method according to claim 2 or 3, characterized in that: The copper alloy is used as an anode electrode, an inert material is used as a cathode electrode, and a corrosive solution is used as an electrolyte. A potential is applied to the anode electrode to electrolyze and remove the sacrificial metal in the copper alloy to form the porous copper, including: The copper alloy includes a copper-aluminum alloy; the copper-aluminum alloy is used as an anode electrode, platinum or graphite is used as a cathode electrode, a calomel electrode is used as a reference electrode, and a sodium chloride solution is used as an electrolyte; Compared with the reference electrode, a second potential is applied to the anode electrode by a power supply to electrolyze and remove the sacrificial metal in the copper alloy to form the porous copper; the second potential ranges from 0.1V to 0.5V; The power supply is disconnected, and the porous copper is cleaned and dried to complete the preparation of the porous copper.

6. The manufacturing method according to claim 1, characterized in that: Forming a copper alloy in the blind hole, comprising: Depositing an adhesion layer and a seed layer in the blind hole in sequence to form a recessed space in the blind hole; The copper alloy is filled in the recessed space by a magnetron sputtering process; the proportion of the sacrificial metal in the copper alloy ranges from 5% to 20%.

7. The manufacturing method according to claim 1, characterized in that: Providing a substrate includes: providing a glass substrate; Forming a blind hole in the substrate, comprising: forming a modified region in the glass substrate by a laser induced process; The modified area is removed by etching to form the blind hole.

8. A semiconductor packaging structure, characterized in that: include: substrate; Porous copper, extending through the substrate; The first end of the porous copper is flush with the front surface of the substrate, and the second end of the porous copper is flush with the back surface of the substrate; the porosity of the porous copper is in a range of 2% to 25%.

9. The semiconductor package structure according to claim 8, characterized in that: The pore diameter of the porous copper is in the range of 50 nm to 200 nm.

10. The semiconductor package structure according to claim 8, wherein: The expansion coefficient of the porous copper is less than 16.8×10 -6 m / K.

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