Package and method of forming same

Abstract

In one embodiment, a package includes an interposer, where the interposer includes a first waveguide and a first reflector optically coupled to the first waveguide; and an optical package attached to the interposer, where the optical package includes: a second waveguide; and a second reflector optically coupled to the second waveguide, where the second reflector is vertically aligned with the first reflector. The embodiment of the invention also relates to a method of forming the package.

Description

Technical Field

[0001] Embodiments of the present application relate to packages and methods of forming the same. Background Art

[0002] Optical signals and processing are often combined with electrical signals and processing to provide sophisticated applications. For example, optical fibers can be used for long-range signal transmission, and electrical signals can be used for short-range signal transmission and processing and control. Thus, a device integrating long-range optical components and short-range electrical components is formed for conversion between optical and electrical signals, as well as processing of optical and electrical signals. Thus, a package may include optical (photonic) components and electronic devices. Summary of the invention

[0003] Some embodiments of the present application provide a package, comprising: an intermediary layer, comprising: a first waveguide; and a first reflector, the first reflector being optically coupled to the first waveguide; an optical package, attached to the intermediary layer, wherein the optical package comprises: a second waveguide; and a second reflector, the second reflector being optically coupled to the second waveguide, wherein the second reflector is vertically aligned with the first reflector.

[0004] Other embodiments of the present application provide a package, comprising: a first optical structure, including an electronic tube core, a plurality of wires, a plurality of photonic components, a plurality of first waveguides and a plurality of first reflective structures; and a second optical structure, joined to the first optical structure, wherein the second optical structure comprises a plurality of second waveguides and a plurality of second reflective structures, wherein the independent first reflective structures of the plurality of first reflective structures respectively correspond to the independent second reflective structures of the plurality of second reflective structures.

[0005] Still other embodiments of the present application provide a method for forming a package, comprising: forming an optical interposer including an interconnect structure above a photonic component, wherein the interconnect structure is electrically coupled to the photonic component; bonding an electronic die to a top side of the optical interposer, wherein the electronic die is electrically coupled to the interconnect structure; forming an optical interconnect structure on a bottom side of the optical interposer, wherein the optical interconnect structure includes a first waveguide and a first reflector, wherein the first reflector is optically coupled to the first waveguide; performing a laser writing process to form a lens; attaching the lens to the bottom side of the optical interconnect structure, wherein the lens is optically coupled to the first reflector; and forming a conductive connector on the bottom side of the optical interconnect structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] When read in conjunction with the accompanying drawings, various aspects of the disclosed embodiments can be best understood from the following detailed description. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, for clarity of discussion, the size of the various components may be arbitrarily increased or reduced.

[0007] Figures 1 to 9 Intermediate steps in the formation of an optical package according to some embodiments are shown.

[0008] Fig.10 A composite interposer is shown in accordance with some embodiments.

[0009] Fig.11 and Fig.12 Intermediate steps in the formation of an optical system according to some embodiments are shown.

[0010] Fig.13 Shown is a magnified view of an optical system according to some embodiments.

[0011] Fig.14 A cross-sectional view of a photonic structure according to some embodiments is shown.

[0012] Fig.15 A plan view of a photonic structure according to some embodiments is shown.

[0013] Fig.16 A cross-sectional view of a photonic structure according to some embodiments is shown.

[0014] Fig.17 Shown is a magnified view of an optical system according to some embodiments.

[0015] Fig.18 Shown is a magnified view of an optical system according to some embodiments.

[0016] Fig.19 A cross-sectional view of a photonic structure according to some embodiments is shown.

[0017] Fig. 20 Shown is a magnified view of an optical system according to some embodiments.

[0018] Fig.21 Shown is a magnified view of an optical system according to some embodiments.

[0019] Fig. 22 A cross-sectional view of a photonic structure according to some embodiments is shown.

[0020] Fig.23 A bridge structure according to some embodiments is shown.

[0021] Fig.24 An optical package according to some embodiments is shown.

[0022] Fig.25 A cross-sectional view of a photonic structure according to some embodiments is shown.

[0023] Fig.26 Shown is a magnified view of an optical system according to some embodiments.

[0024] Fig. 27 A plan view of a photonic structure according to some embodiments is shown.

[0025] Fig.28 A cross-sectional view of a photonic structure according to some embodiments is shown.

[0026] Fig.29 Shown is a magnified view of an optical system according to some embodiments. DETAILED DESCRIPTION

[0027] The following disclosure provides many different embodiments or examples for realizing different features of the disclosed embodiments. Specific examples of components and arrangements are described below to simplify the disclosed embodiments. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include an embodiment in which the first component and the second component are directly contacted, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the disclosed embodiments may repeat reference numerals and / or characters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0028] In addition, for ease of description, spatially relative terms such as "under," "beneath," "lower," "above," "upper," and the like may be used herein to describe the relationship of one element or component to another (or other) elements or components as shown in the figures. Spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein may be interpreted accordingly. In addition, throughout the accompanying drawings, arrows are used to indicate the path of light (e.g., optical signals and / or optical power). It should be understood that for clarity, the transmission of light is described as a path along one direction as indicated by the arrow, but in some instances, light may also be transmitted in the opposite direction along the path.

[0029] Various optical structures such as interposers, packages, and systems and methods of forming them are described herein. An optical structure may have a reflector formed therein that may be configured to receive light from a photonic component of the structure and transmit the light vertically at a location where the light may be received by another optical structure. In addition, the reflector of the structure may be configured to receive vertically transmitted light and transmit it to the photonic component of the structure. In this manner, the reflector may be used to transmit optical signals between the above optical structures. In addition, lenses may be formed between the above optical structures, which allows for improved vertical transmission of optical signals between the optical structures and greater vertical distances between the optical structures.

[0030] The embodiments discussed herein are intended to provide examples of the subject matter of the disclosed embodiments that can be manufactured or used, and those of ordinary skill in the art will readily appreciate the modifications that can be made while remaining within the contemplation of the different embodiments. Throughout the various views and illustrative embodiments, the same reference numerals are used to represent the same elements. Although the method embodiments may be discussed as being implemented in a particular order, other method embodiments may be implemented in any logical order.

[0031] Figures 1 to 9 An optical package 100 (see FIG. Fig. 9 ) is an intermediate step in the formation of the optical package 100. The optical package 100 includes an optical intermediate layer 50 (see Figure 3 ), optical interconnect structure 70 (see Figure 6 ) and the electronic tube core 60 (see Figure 4 ). The optical interconnect structure 70 includes a photonic component 74 and a reflector 76, which allows vertical transmission or reception of optical signals, as described in more detail below. The optical package 100 can be configured to receive, generate, modify, transmit and / or process optical signals. In this way, the optical package 100 can provide an interface for electrical and optical communications in a photonic system. In some instances, the optical package 100 can be considered an "optical engine", "optical die", "optical structure", etc.

[0032] Figures 1 to 3 An optical interposer 50 (see FIG. Figure 3 ). In some embodiments, the optical interposer 50 includes an intermediate step in the formation of the photonic component 18 (see Figure 2 ) above the interconnect structure 20 (see Figure 3 ). In some examples, the optical interposer 50 can be considered as a photonic integrated circuit (PIC), an optical interconnect structure, etc. Figure 1In the specific embodiment shown in , the optical interposer 50 at this stage includes a first substrate 10, a first insulating layer 12, and a photonic layer 14. In an embodiment, at the beginning of the manufacturing process of the optical interposer 50, the first substrate 10, the first insulating layer 12, and the photonic layer 14 may be collectively part of a silicon-on-insulator (SOI) substrate, etc., which may be doped (e.g., with p-type or n-type dopants) or undoped. The first substrate 10 may be a wafer, such as a silicon wafer. Other substrates, such as silicon-on-insulator (SOI) substrates, multilayer substrates, or gradient substrates may also be used. In some embodiments, the semiconductor material of the first substrate 10 may include: silicon; germanium; compound semiconductors including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide; alloy semiconductors including silicon germanium, gallium arsenic phosphide, aluminum indium arsenide, aluminum gallium arsenide, gallium indium arsenide, gallium phosphide, and / or gallium indium arsenide phosphide; or combinations thereof. In other embodiments, the first substrate 10 may be a dielectric material such as silicon oxide, glass, ceramic, plastic, or any other suitable material that allows structural support of the above device. In some embodiments, a plurality of optical packages 100 may be formed on the same first substrate 10 and then separated into independent first optical packages 100 using a segmentation process (e.g., a sawing process, a cutting process, etc.).

[0033] The first insulating layer 12 may be a dielectric layer that separates the first substrate 10 from the photonic layer 14 above, and in some embodiments, may additionally serve as a portion of a cladding material surrounding a subsequently fabricated photonic component 18 (described below). In embodiments, the first insulating layer 12 may be silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations of these, or the like. The first insulating layer 12 may be formed using techniques such as implantation (e.g., to form a buried oxide (BOX) layer) or using a suitable deposition technique such as chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), combinations of these, or the like. However, any suitable materials and fabrication methods may be used.

[0034] In some embodiments, the photon layer 14 may be a semiconductor material such as silicon, germanium, silicon germanium, combinations of these, etc. In other embodiments, the photon layer 14 may include a dielectric material such as silicon nitride, III-V semiconductor materials, lithium niobate materials, polymers, etc., or combinations thereof. The photon layer 14 may be formed using a suitable technique, such as epitaxial growth, CVD, ALD, PVD, etc., or combinations thereof. Other materials or techniques are also possible.

[0035] Figure 2A photonic component 18 is shown formed from the photonic layer 14 according to some embodiments. In some embodiments, the photonic component 18 may include devices or components such as optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, etc.), couplers (e.g., grating couplers, edge couplers including tip waveguides with widths in a range of about 1 nm to about 200 nm, etc.), directional couplers, optical modulators (e.g., germanium modulators, Mach-Zehnder silicon photonic switches, micro-electromechanical switches, micro-ring resonators, etc.), amplifiers, multiplexers, demultiplexers, optical-to-electrical converters (e.g., photodetectors, PN junctions, etc.), electro-optical converters, lasers (e.g., laser diodes), phase shifters, combinations of these, etc. However, the photonic component 18 may include other devices or components in addition to these examples.

[0036] In some embodiments, the photonic component 18 can be formed by patterning the photonic layer 14 into an appropriate shape for the photonic component 18. In some embodiments, the photonic layer 14 can be patterned using one or more photolithographic masking and etching processes, but any suitable method of patterning the photonic layer 14 can be utilized. The patterning can expose portions of the first insulating layer 12. In some instances, additional processing steps can be implemented to form some types of photonic components 18, such as additional implantation processes, deposition processes, and / or patterning processes. In some embodiments, one or more photonic components 18 can be formed by patterning the photonic layer 14 and then depositing another material on portions of the patterned photonic layer 14. For example, the formation of the photonic component 18 can include patterning the photonic layer 14 including silicon and then epitaxially growing regions of germanium on the patterned photonic layer 14, but other materials or process steps are also possible.

[0037] Still reference Figure 2According to some embodiments, a second insulating layer 16 may be formed over the first insulating layer 12 and / or the photonic components 18. The second insulating layer 16 may be, for example, a dielectric layer that separates the individual photonic components 18 from each other and from the structures above. In addition, in some instances, the second insulating layer 16 may additionally serve as a cladding material that at least partially surrounds one or more photonic components 18. In some embodiments, the second insulating layer 16 may include silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations of these, and the like, which may be formed using suitable deposition techniques such as CVD, ALD, PVD, and the like. Other materials or deposition techniques are also possible. In some embodiments, after depositing the second insulating layer 16, a planarization process (e.g., a chemical mechanical polishing (CMP) process, a grinding process, and the like) may be implemented to planarize the top surface of the second insulating layer 16. In some embodiments, the planarization process may expose the top surface of one or more photonic components 18. In such an embodiment, the top surface of the photonic component 18 and the top surface of the second insulating layer 16 may be flush or coplanar (within process variations). In some embodiments, after the planarization process is performed, one or more photonic components 18 remain covered by the second insulating layer 16 .

[0038] Figure 3 An interconnect structure 20 is shown formed over the photonic components 18 in accordance with some embodiments. The interconnect structure 20 includes a dielectric layer 22 (not separately shown) and conductive features 24 formed in the dielectric layer 22. The conductive features 24 may include wires, conductive vias, conductive pads, metallization patterns, redistribution layers, etc. that provide electrical interconnect and electrical routing within the optical interposer 50. In some examples, the conductive features 24 may be electrically connected to one or more photonic components 18. In some embodiments, the interconnect structure 20 may also include bonding pads 28 located at the top surface of the interconnect structure 20. The bonding pads 28 are electrically connected to the conductive features 24 and allow electrical connections to be made to an electronic die 60 or the like above, as described below. Figure 4 Describe in more detail.

[0039] In some embodiments, the interconnect structure 20 is formed of alternating layers of dielectric material (e.g., dielectric layer 22) and conductive material (e.g., conductive component 24). The conductive component 24 can be formed using any suitable process, such as deposition, damascene, dual damascene, etc. In a particular embodiment, the interconnect structure 20 can have multiple layers of conductive components 24, but the exact number of layers of conductive components 24 can depend on the design of the optical interposer 50. The dielectric layer 22 can be, for example, an insulating layer and / or a passivation layer, and can include silicon oxide, silicon nitride, a polymer, etc., or a combination thereof. The conductive component 24 can include, for example, a metal or metal alloy, such as copper, silver, gold, tungsten, cobalt, ruthenium, aluminum, alloys thereof, combinations thereof, etc. Other materials are also possible.

[0040] In some embodiments, the bonding pad 28 is formed in the topmost dielectric layer 22' of the dielectric layer 22. In some embodiments, the bonding pad 28 may include a through-hole portion (not shown) that physically and electrically contacts the conductive component 24 below. In some embodiments, the topmost dielectric layer 22' may be a material suitable for dielectric-to-dielectric bonding, such as silicon oxide, silicon nitride, silicon oxynitride, etc., and therefore, the topmost dielectric layer 22' may be referred to as a bonding layer 22' herein. Other materials are also possible. In some embodiments, the bonding pad 28 may be formed by first forming an opening (not shown separately) in the topmost dielectric layer 22' to expose the conductive portion of the conductive component 24 below. The opening may be formed using suitable photolithography and etching techniques. In some embodiments, a seed layer is deposited in the opening, and then a conductive material is deposited on the seed layer. In some embodiments, before depositing the conductive material, a liner (not shown) such as a diffusion barrier layer, an adhesion layer, etc. may be deposited in the opening. The liner may include, for example, tantalum nitride, tantalum, titanium nitride, titanium, cobalt tungsten, etc., and may be formed using a suitable deposition process such as CVD, PVD, ALD, etc. In some embodiments, the bonding pad 28 can be formed by depositing a seed layer (not shown) in the opening. The seed layer can be deposited on the liner (if present). In some embodiments, the seed layer can include copper, copper alloy, etc. Then, the conductive material can be formed in the opening using, for example, an electroplating process or a chemical plating process. The conductive material can be similar to those described for the conductive component 24. For example, in some embodiments, the conductive material can be copper or a copper alloy. A planarization process (e.g., a CMP process or a grinding process) can be implemented to remove excess conductive material so that the top surface of the bonding pad 28 and the topmost dielectric layer 22' are approximately flush. This is an example, and the bonding pad 28 can be formed using another suitable process.

[0041] In addition, during the manufacture of the interconnect structure 20, one or more photonic components 26 can be formed within the dielectric layer 22. The photonic components 26 can be similar to the photonic components 18 described previously. For example, in some embodiments, the photonic components 26 can include waveguides (e.g., silicon nitride waveguides), couplers, etc. In some instances, the one or more photonic components 26 can be optically coupled to each other and / or optically coupled to the one or more photonic components 18. In this way, the optical interposer 50 can provide optical communication and optical interconnection within the optical package 100.

[0042] In some embodiments, the photonic component 26 can be formed by depositing materials for the photonic component 26 on the dielectric layer 22 during the manufacture of the interconnect structure 20. The material for the photonic component 26 can be a dielectric material such as silicon nitride, silicon oxide, silicon oxynitride, a polymer, a combination of these, or a semiconductor material such as silicon, germanium, or the like. The material can then be patterned using suitable photolithography and etching techniques. Another dielectric layer 22 can then be deposited on the photonic component 26. In certain embodiments, the interconnect structure 20 can have multiple layers of the photonic component 26, but the exact number of layers of the photonic component 26 can depend on the design of the optical interposer 50. In this way, according to some embodiments, the optical interposer 50 can be formed. Other optical interposers 50 having other components or configurations are also possible, and other materials or techniques can be used to manufacture the optical interposer 50 in other embodiments.

[0043] exist Figure 4 In accordance with some embodiments, electronic die 60 is bonded to interconnect structure 20. In some examples, the electronic die may be considered an electronic integrated circuit (EIC) die. Figure 4 A single electronic die 60 is shown bonded to the interconnect structure 20, but in other embodiments, more than one electronic die 60 may be bonded to the interconnect structure 20. In some embodiments, the electronic die 60 may include a bonding pad 62 formed in a bonding layer 64, and the electronic die 60 may be bonded to the interconnect structure 20 via dielectric-to-dielectric bonding and / or metal-to-metal bonding (e.g., direct bonding, fusion bonding, oxide-to-oxide bonding, hybrid bonding, etc.), as described in more detail below.

[0044] After bonding, the electronic die 60 may be electrically connected to the photonic component 18 and / or the photonic component 26 through the interconnect structure 20. The electronic die 60 may include an integrated circuit for interfacing with the photonic component 18 / 26, such as a circuit for controlling the operation of the photonic component 18 / 26. For example, the electronic die 60 may include a controller, a driver, a transimpedance amplifier, or the like, or a combination thereof. The electronic die 60 may include, for example, a chip, a die, a system-on-chip (SoC) device, a system-on-integrated circuit (SoIC) device, a package, or the like, or a combination thereof. The electronic die 60 may include one or more processing devices, such as a central processing unit (CPU or "xPU"), a graphics processing unit (GPU), an application-specific integrated circuit (ASIC), a high-performance computing (HPC) die, a logic die, or the like, or a combination thereof. The electronic die 60 may include one or more memory devices, which may be volatile memory, such as a dynamic random access memory (DRAM), a static random access memory (SRAM), a high bandwidth memory (HBM), another type of memory, or the like. In some embodiments, the electronic die 60 includes circuits for processing electrical signals received from the photonic component 18 / 26, such as for processing electrical signals received from the photonic component 18 / 26 including a photodetector. In some embodiments, the electronic die 60 can control the high-frequency signals of the photonic component 18 / 26 based on the electrical signal (digital or analog) received from another device or die. In some embodiments, the electronic die 60 can provide a serializer / deserializer (SerDes) function. In some embodiments, the electronic die 60 can be used as part of an I / O interface between optical signals and electrical signals within the optical package 100, and the optical package 100 described herein can be considered a system on a chip (SoC) device or a system on an integrated circuit (SoIC) device.

[0045] In some embodiments, the bonding layer 64 of the electronic die 60 is bonded to the bonding layer 22' (e.g., the topmost dielectric layer 22') of the optical interposer 50 using a dielectric to dielectric bonding process, and the bonding pad 62 of the electronic die 60 is bonded to the corresponding bonding pad 28 of the optical interposer 50 using a metal to metal bonding process. In some embodiments, the bonding process can be initiated by activating the bonding surfaces of the bonding layer 64 and the bonding layer 22', which can facilitate the bonding of the bonding surfaces. Activating the bonding surfaces can include, for example, dry processing, wet processing, plasma processing, exposure to an inert gas plasma, exposure to H2, exposure to N2, exposure to O2, combinations thereof, and the like. For example, for embodiments using wet processing, an RCA cleaning process can be used. In other embodiments, the activation process can include other types of processing.

[0046] After the activation process, the optical interposer 50 and the electronic die 60 can be cleaned using, for example, a chemical rinse, and then the electronic die 60 is aligned with the optical interposer 50 and placed in physical contact with the optical interposer 50. The optical interposer 50 and the electronic die 60 are then subjected to heat treatment and contact pressure to bond the bonding layer 64 to the bonding layer 22' with a dielectric to dielectric bond, and to bond the bonding pad 62 to the bonding pad 28 with a metal to metal bond. In some embodiments, the bonded structure is then baked, annealed, pressed, or otherwise treated to strengthen or complete the bond. This is an example, and other bonding processes are also possible.

[0047] Figure 4 An embodiment is shown in which the electronic die 60 has the same width as the optical interposer 50. For example, a singulation process may then be performed, which leaves approximately coplanar sidewalls of the electronic die 60 and the optical interposer 50. In other embodiments, the electronic die 60 may have a smaller width than the optical interposer 50. In such an embodiment, a gap filler material may be deposited to fill the space around the electronic die 60 and provide additional support. The gap filler material may be a material such as silicon oxide, silicon nitride, silicon oxynitride, a sealant, a molding material, a polymer, combinations of these, and the like, but other materials are also possible. In some embodiments, a planarization process (e.g., CMP or grinding) may be performed to remove excess gap filler material and / or expose the electronic die 60.

[0048] exist Figure 5 In some embodiments, a support substrate 66 is attached to the electronic die 60. The support substrate 66 is a rigid structure that is attached to provide structural or mechanical stability. The support substrate 66 may include one or more materials, such as silicon (e.g., silicon wafer, bulk silicon, etc.), silicon oxide, metal, organic core material, etc., or another type of material. In some embodiments, the support substrate 66 is attached to the electronic die 60 using a dielectric to dielectric bonding. For example, a bonding layer (not separately shown) can be formed on the electronic die 60 and on the support substrate 66, and then bonded together. The bonding layer can be similar to the bonding layer 22' or 64, and can be used similar to that for the Figure 4 The substrate 66 may be bonded together using dielectric-to-dielectric bonding techniques similar to those described above. Other materials or bonding techniques are also possible. In other embodiments, the support substrate 66 may be attached using an adhesive layer (not separately shown) or the like.

[0049] exist Figure 6In some embodiments, the first substrate 10 is removed and an optical interconnect structure 70 is formed on the optical interposer 50. In some embodiments, the first substrate 10 and the first insulating layer 12 are removed using a planarization process, such as a CMP process, a grinding process, one or more etching processes, a combination of these, etc. Removing the first insulating layer 12 can expose the second insulating layer 16 and the photonic component 18. In other embodiments, only the first substrate 10 is removed, and the first insulating layer 12 is left.

[0050] According to some embodiments, the optical interconnect structure 70 may include a photonic component 74 formed within one or more dielectric layers 72 (not separately shown). The photonic component 74 may be similar to the previously described photonic components 18 or 26. For example, in some embodiments, the photonic component 74 may include a waveguide (e.g., a silicon nitride waveguide), a coupler, etc. In some instances, one or more photonic components 74 may be optically coupled to each other and / or to one or more photonic components 18. In this manner, the optical interconnect structure 70 may provide optical communication and optical interconnection within the optical package 100.

[0051] In some embodiments, the photon assembly 74 can be formed using materials or techniques similar to those used to form the photon assembly 26. For example, the photon assembly 74 is formed by depositing the material for the photon assembly 74 on the dielectric layer 72 and then patterning the material using suitable photolithography and etching techniques. The material for the photon assembly 74 can be a dielectric material such as silicon nitride, silicon oxide, silicon oxynitride, a polymer, a combination of these, or a semiconductor material such as silicon, germanium, etc. Then, another dielectric layer 72 can be deposited on the photon assembly 74. The dielectric layer 72 can include, for example, silicon oxide, spin-on glass, etc., which can include a material that is transparent or substantially transparent within the relevant wavelength range. Other materials are also possible. In a particular embodiment, the optical interconnect structure 70 can have multiple layers of the photon assembly 74, but the exact number of layers of the photon assembly 74 can depend on the design of the optical package 100.

[0052] In some embodiments, the optical interconnect structure 70 may include one or more reflectors 76. The reflector 76 is a reflective structure (e.g., a mirror, etc.) that can be formed within one or more dielectric layers 72 of the optical interconnect structure 70. The reflector 76 is optically coupled to the photonic component 74 and is configured to receive optical signals from the photonic component 74 and redirect those optical signals to an external photonic component (e.g., of another package, chip, die, interposer, etc.). For example, the reflector 76 can enable vertical transmission of optical signals. The reflector 76 can additionally or alternatively be configured to receive optical signals from an external photonic component and redirect them to the photonic component 74 to couple those optical signals into the photonic component 74. For example, the reflector 76 can be formed near the photonic component 74 (e.g., a waveguide) and configured to receive light from the photonic component 74 and reflect the received light through one or more dielectric layers 72 and out of the optical interconnect structure 70, such as by Figure 6 . The reflector 76 can also be configured to receive light from outside the optical interconnect structure 70 and couple it to the nearby photonic assembly 74. In this way, optical signals can be communicated between the optical package 100 and other dies, packages, structures or photonic assemblies. The reflector 76 can be formed of or include one or more layers of metal materials, such as copper, aluminum, tantalum, AlCu, AlCuSi, etc., their alloys and / or their multilayers. Other materials are also possible.

[0053] In some embodiments, the reflector 76 can be formed by etching a groove (not shown separately) in the dielectric layer 72 and then depositing a metal material on the bottom surface of the groove. In some embodiments, the bottom surface of the groove can be inclined or stepped, so that the deposited metal material forms a similar inclined or stepped reflective surface. The bottom surface of the groove can be flat, stepped, convex, concave or curved. The groove can be formed using one or more photolithography and etching steps. In some embodiments, the groove can be formed using "grayscale" photolithography technology, which allows the formation of a groove with a specific bottom surface profile (e.g., an inclined or curved surface profile). Then, the metal material can be deposited in the groove to coat the bottom surface of the groove, forming a reflective layer on the bottom surface of the groove. In some embodiments, after deposition, the undesirable metal material can be removed using photolithography and etching techniques. In other embodiments, a patterned photoresist layer can be formed before the metal material is deposited, so that removing the photoresist layer also removes the undesirable metal material. The remaining metal material forms the reflector 76. Other processes for forming the reflector 76 are also possible.

[0054] In some embodiments, after forming reflector 76, the recess is filled with a dielectric material (not shown separately). The dielectric material may include materials such as silicon oxide, silicon nitride, polyimide, polybenzoxazole (PBO), etc. In some embodiments, the dielectric material may be a material similar to the material of dielectric layer 72. In some embodiments, after filling the recess, a planarization process (e.g., CMP or grinding) may be performed to remove excess dielectric material. In some embodiments, after performing the planarization process, the surfaces of dielectric layer 72 and the dielectric material may be flush.

[0055] exist Figure 7 In some embodiments, a through hole 80 extending through the optical interconnect structure 70 and the second insulating layer 16 is formed. The through hole 80 can physically and electrically contact the conductive component 24 of the interconnect structure 20. In some embodiments, the through hole 80 can extend into one or more dielectric layers 22. The through hole 80 can be formed, for example, by forming an opening extending through the dielectric layer 72, the second insulating layer 16 and / or one or more dielectric layers 22 to expose the surface of the conductive component 24. The opening can be formed using acceptable photolithography and etching techniques, such as by forming and patterning a photoresist and then using the patterned photoresist as an etching mask to perform an etching process. The etching process may include, for example, a dry etching process and / or a wet etching process. A conductive material can then be formed in the opening to form the through hole 80. In some embodiments, a liner (not shown) can be deposited in the opening before the conductive material is formed. The conductive material may include, for example, a metal or a metal alloy, such as copper, silver, gold, tungsten, cobalt, aluminum, alloys thereof, and the like. A planarization process (e.g., a CMP process or a grinding process) may be performed to remove excess conductive material along the surface of optical interconnect structure 70 (e.g., dielectric layer 72) so that via 80 is flush with the surface of optical interconnect structure 70. Other materials or techniques are also possible. In other embodiments, via 80 is omitted.

[0056] Still reference Figure 7 According to some embodiments, a passivation layer 82 may be formed over the optical interconnect structure 70. The passivation layer 82 may include, for example, a polymer such as PBO, polyimide, BCB, etc.; a nitride such as silicon nitride, etc.; an oxide such as silicon oxide, PSG, BSG, BPSG, etc.; a sealant, a molding compound, etc.; etc. or a combination thereof. The passivation layer 82 may be formed, for example, by spin coating, lamination, CVD, PVD, ALD, etc. In some embodiments, photonic components such as waveguides may also be formed in the passivation layer 82.

[0057] Then, an under-bump metal (UBM) 84 may be formed within the passivation layer 82 to make physical and electrical contact to the through-hole 80. In other embodiments, the UBM 84 is formed before the passivation layer 82 is formed. In some embodiments, an opening is formed in the passivation layer 82 to expose the UBM 84. The opening may be formed using acceptable photolithography and etching techniques, such as by forming and patterning a photoresist and then using the patterned photoresist as an etching mask to perform an etching process. The etching process may include, for example, a dry etching process and / or a wet etching process. One or more conductive materials may then be deposited in the opening to form the UBM 84. In other embodiments, the UBM 84 has a bump portion that is located on the main surface of the passivation layer 82 and extends along the main surface of the passivation layer 82. In some embodiments, the UBM 84 is not formed.

[0058] exist Figure 8 In some embodiments, lens 90 is attached to passivation layer 82. Lens 90 can receive light from reflector 76 and focus or otherwise shape the light so that the light can be more efficiently coupled to an external photonic structure (e.g., composite interposer 200 (see Fig.11 ) etc.). Lens 90 may also receive light from an external photonic structure and focus or otherwise shape the light so that light received by reflector 76 is more efficiently coupled into photonic structure 74. In this way, transmission of optical signals between optical package 100 and an external photonic structure may have improved efficiency. In some examples, the use of lens 90 may also allow for optical package 100 and another photonic component (e.g., Fig.10 In some embodiments, lens 90 may be secured to passivation layer 82 using optical glue 92 or the like.

[0059] In some embodiments, the lens 90 can be formed using a laser writing process. The laser writing process focuses the laser on a local area within the material, changing the material properties of the local area. For example, the laser can increase the refractive index of the local area relative to the adjacent (e.g., non-laser writing) area. In some embodiments, the laser writing process used to form the lens 90 can be a femtosecond direct laser writing process, etc. In some embodiments, the size, shape, position, optical properties or other properties of the lens 90 can depend on the material of the lens 90, or can be controlled by controlling parameters such as laser wavelength, laser pulse energy, focal size, laser intensity distribution or phase distribution, laser pulse width (e.g., duration), laser pulse repetition rate or duty cycle, laser writing path speed, laser writing direction, laser polarization or other parameters. Therefore, the material of the lens 90 can include a material suitable for laser writing, such as borosilicate glass, soda-lime-silicon glass, fluoride glass (e.g., fluorozirconate glass, etc.), another type of glass, high silica (e.g., based on silicon oxide) material, polymer, etc. In this way, the lens 90 can include a laser-written material. In some embodiments, the lens 90 can be formed using a laser writing process and then attached to the passivation layer 82. In other embodiments, the material for lens 90 can be attached to passivation layer 82, and then a laser writing process can be performed to form lens 90 within the material. Using a laser writing process to form lens 90 can allow design flexibility, improve structural stability, reduce costs, and / or reduce the size of a photonic system such as optical package 100.

[0060] exist Fig. 9In some embodiments, a conductive connector 96 is formed on the UBM 84. The conductive connector 96 can be, for example, a ball grid array (BGA) connector, a solder ball, a metal column, a controlled collapse chip connection (C4) bump, a microbump, a bump formed by chemical nickel plating-chemical palladium plating-immersion gold technology (ENEPIG), etc. The conductive connector 96 may include a conductive material, such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, etc., or a combination thereof. In some embodiments, the conductive connector 96 is formed by initially forming a solder layer by evaporation, electroplating, printing, solder transfer, ball placement, etc. Once the solder layer has been formed on the structure, reflow can be implemented to shape the material into a desired bump shape. In another embodiment, the conductive connector 96 includes a metal column (such as a copper column) formed by sputtering, printing, electroplating, chemical plating, CVD, etc. The metal column can be solder-free and have a substantially vertical sidewall. In some embodiments, a metal capping layer is formed on the top of the metal column. The metal cover layer may include nickel, tin, tin-lead, gold, silver, palladium, indium, nickel-palladium-gold, nickel-gold, etc. or a combination thereof, and may be formed by a plating process. In other embodiments, the conductive connector 96 is omitted, and the UBM 84 is a bonding pad for metal-to-metal bonding to an external component. In some embodiments, the thickness of the lens 90 is less than the thickness of the conductive connector 96. In this way, the optical package 100 can be formed, but in other embodiments, other materials or process steps can be used to form the optical package 100.

[0061] Fig.10 A composite interposer 200 is shown in accordance with some embodiments. In accordance with some embodiments, the composite interposer 200 includes a substrate 202, an interconnect structure 210 on the substrate 202, and vias 204. The substrate 202 may be a semiconductor substrate (eg, a silicon wafer) or another type of substrate, such as those previously described for the first substrate 10.

[0062] The interconnect structure 210 includes one or more layers (not separately shown) of conductive features 214 formed in one or more dielectric layers 212. The conductive features 214 may include conductive lines, conductive vias, conductive pads, etc., which may be formed using any suitable technique, such as damascene, dual damascene, etc. For example, the conductive features 214 may be formed using techniques similar to those previously described for the conductive features 24. Additionally, in some embodiments, the interconnect structure 210 includes one or more waveguides 216 formed in the dielectric layer 212. The waveguides 216 may be formed of silicon, silicon nitride, or another suitable material, and may be formed using any suitable technique, such as the techniques previously described for the photonic components 18, 26, or 74. In some embodiments, the interconnect structure 210 may have a layer of waveguides 216, such as Fig.10, or there may be multiple layers of waveguides 216. Some waveguides 216, including those on different layers, may be optically coupled. The waveguides 216 may be formed within the dielectric layer 212 near the top surface of the interconnect structure 210, or may be formed within an internal dielectric layer 212. In some embodiments, the waveguides 216 may include other photonic structures, such as grating couplers, evanescent couplers, edge couplers, or other types of structures.

[0063] In some embodiments, the interconnect structure 210 may also include a reflector 218 (e.g., reflectors 218A-218B) formed within the dielectric layer 212. The reflector 218 may be similar to the reflector 76 described previously and may be formed using similar materials or techniques. In some embodiments, the reflector 218 may be configured or arranged to couple an optical signal between the waveguide 216 and the photonic components above. For example, light may be transmitted through the dielectric layer 212 of the interconnect structure 210 to the reflector 218, which reflects the light into an adjacent waveguide 216. In this way, the reflector 218 may enable vertical transmission of an optical signal. Similarly, light may be transmitted from the waveguide 216 to an adjacent reflector 218, which redirects the light so that the light is transmitted from the top surface of the interconnect structure 210. In some embodiments, the reflector 218 may be formed in different layers of the interconnect structure 210. In some embodiments, a region of the interconnect structure 210 above the reflector 218 (eg, a region between the reflector 218 and a top surface of the interconnect structure 210 ) may be free of conductive features 214 and waveguides 216 to provide efficient and unimpeded transmission of optical signals through the dielectric layer 212 .

[0064] The via 204 of the composite interposer 200 extends through the substrate 202 and is electrically connected to the interconnect structure 210. The via 204 may be formed using techniques similar to those previously described for the via 80. For example, an opening may be etched that extends through the substrate 202 and may extend through one or more dielectric layers 212 to expose the conductive feature 214. The opening may then be filled with a conductive material to form the via 204.

[0065] Fig.11 and Fig.12 An intermediate step in the formation of an optical system 300 according to some embodiments is shown. In some embodiments, the optical system 300 includes a composite interposer 200, one or more optical packages 100, and one or more device dies 302, described in more detail below. Fig.11 In FIG. 1 , optical package 100 and one or more device dies 302 are connected to composite interposer 200 according to some embodiments. Fig.11One optical package 100 and two device dies 302A-302B are shown, but in other embodiments, any suitable number of optical packages 100 or device dies 302 may be connected to the composite interposer 200 in any suitable arrangement. As described in more detail below, the optical package 100 and the device dies 302 may be electrically connected to the composite interposer 200, and the optical package 100 may be optically coupled to the composite interposer 200.

[0066] Each of the device dies 302 may include, for example, a chip, a die, a system-on-chip (SoC) device, a system-on-integrated circuit (SoIC) device, a package, etc., or a combination thereof. The device die 302 may include a logic die, a memory die, an input-output (I / O) die, an integrated passive device (IPD), etc., or a combination thereof. For example, the device die 302 may include a logic die, such as a central processing unit (xPU or CPU) die, a graphics processing unit (GPU) die, a mobile application die, a microcontroller unit (MCU) die, a baseband (BB) die, an application processor (AP) die, an application-specific integrated circuit (ASIC) die, etc. The device die 302 may include a memory die, such as a static random access memory (SRAM) die, a dynamic random access memory (DRAM) die, a high-performance memory (HBM) die, etc. The different device dies 302 (e.g., device dies 302A-302B) on the composite interposer 200 may be of similar types or different types, and other types of device dies 302 are also possible. In some embodiments, conductive connectors 304 are formed on the device dies 302. In some examples, the conductive connectors 304 may be similar to the conductive connectors 96. For example, the conductive connectors 304 may include ball grid array (BGA) connectors, solder balls, metal pillars, controlled collapse chip connection (C4) bumps, micro bumps, bumps formed by electroless nickel-electroless palladium-immersion gold technology (ENEPIG), etc.

[0067] Fig.11 The optical package 100 may be similar to the previously described Fig. 9 The optical package 100 described above is different in that Fig.11 The optical package 100 includes a plurality of reflectors 76 (e.g., reflectors 76A-76B) and a plurality of lenses 90 (e.g., lenses 90A-90B). In addition, in some embodiments, the optical package 100 may include a plurality of device regions 101 (e.g., device regions 101A-101B). Each device region 101 may be a region of the optical package 100 that is at least partially dedicated to processing a specific optical signal. For example, in some embodiments, the device region 101 may have a configuration similar to that for the optical signal. Fig. 9Components, parts and / or functions of the optical package 100 described herein. In some instances, multiple device regions 101 can be formed in a single optical package 100, rather than forming multiple separate optical packages 100. Forming multiple device regions 101 within a single optical package 100 in this manner can reduce processing costs and device size. In some instances, device regions 101 can be associated with certain device dies 302. As an example, in Fig.11 , device area 101A can process optical signals associated with device die 302A, and device area 101B can process optical signals associated with device die 302B. In some embodiments, device area 101 can convert optical signals into electrical signals and transmit them to the associated device die 302, or can receive electrical signals from the associated device die 302 and convert them into optical signals. According to some embodiments, each device area 101 may include one or more reflectors 76 and one or more lenses 90. Other configurations or associations are also possible. In some embodiments, device areas 101 of the same optical package 100 can communicate with each other using optical signals and / or electrical signals.

[0068] In some embodiments, the optical package 100 and the device die 302 can be connected to the composite interposer 200 via conductive connectors 96 and 304, respectively. For example, the conductive connectors 96 of the optical package 100 and the conductive connectors 304 of the device die 302 can be placed on corresponding conductive pads (not shown separately) of the interconnect structure 210 of the composite interposer 200. Then, a reflow process can be performed to bond the optical package 100 and the device die 302 to the composite interposer 200. In this way, the optical package 100 and the device die 302 can be electrically connected to the composite interposer 200, and the composite interposer 200 can provide an electrical connection between the optical package 100 and / or the device die 302. The composite interposer 200 can also provide an optical connection between the optical packages 100, which is described in more detail below. In some embodiments, an underfill 305 can be deposited between the optical package 100 and the composite interposer 200 and between the device die 302 and the composite interposer 200. An underfill 305 may be formed beneath individual or multiple optical packages 100 and / or device dies 302 .

[0069] exist Fig.12 In some embodiments, the optical package 100 and the device die 302 are sealed by an encapsulant 306. The encapsulant 306 can be, for example, a molding material, an epoxy resin, a polymer, etc. In some embodiments, the encapsulant 306 can surround the optical package 100 and the device die 302. In some embodiments, the encapsulant 306 can also be deposited on the top surface of the composite interposer 200, such as Fig.12 . In some embodiments, a planarization process (e.g., a CMP process or a grinding process) is performed to remove excess encapsulant 306. The planarization process can expose the top surfaces of optical package 100 and device die 302. After the planarization process is performed, the top surfaces of encapsulant 306, optical package 100, and / or device die 302 can be approximately flush.

[0070] Still reference Fig.12 According to some embodiments, a conductive connector 224 may be formed on the composite interposer 200. In some embodiments, a UBM 222 electrically connected to the through-hole 204 may be formed on the composite interposer 200. The UBM 222 may be a conductive pad or the like, and may be similar to the embodiment for Figure 7 The UBM 84 is depicted. The conductive connector 224 may be a solder ball, a solder bump, or the like, and may be similar to the previously described conductive connectors 96 or 304. The conductive connector 224 allows electrical connections to be made between the composite interposer 200 and external components. In this manner, the optical system 300 may be formed, although other manufacturing steps, arrangements of components, or configurations of components are possible.

[0071] Fig.13 An enlarged view of a portion of an optical system 300 is shown, according to some embodiments. Fig.13 The optical system 300 may be similar to Fig.12 The optical system 300 is provided. Fig.13 The enlarged view of FIG. 1 shows a portion of the optical package 100 and the composite interposer 200 , which may be similar to FIG. Fig.12 Or corresponding parts shown elsewhere in this document. Fig.13 As shown in FIG. 1 , the lens 90 of the optical package 100 is located between the bottom surface of the optical package 100 and the top surface of the composite interposer 200. The optical glue 92 may cover the lens 90 and may extend from between the bottom surface of the optical package 100 and the top surface of the composite interposer 200. The bottom filler 305 may surround the lens 90, such as Fig.13 . In some embodiments, the bottom surface of the optical package 100 and the top surface of the composite interposer 200 can be separated by a distance D1. In some examples, the distance D1 is about the same as the combined thickness of the lens 90 and the optical glue 92. The thickness of the lens 90 is less than or the same as the thickness of the conductive connector 96, and the thickness of the conductive connector 96 is about the same as the distance D1. In this way, the use of a laser-written lens 90 allows the conductive connector 96 to be used for connection while reducing optical losses of optical signals transmitted between the optical package 100 and the composite interposer 200, as described in more detail below.

[0072] The use of reflectors 76 and lenses 90 in optical package 100 and reflectors 218 in composite interposer 200 can facilitate efficient transmission of optical signals between optical package 100 and composite interposer 200. For example, reflector 76 can be configured to receive light from photonic component 74 (e.g., waveguide, etc.) and redirect the received light through lens 90, such as by Fig.13 . The corresponding reflector 218 in the composite interposer 200 can be configured to receive light from the lens 90 and redirect the light into the waveguide 216. Similarly, the reflector 218 can receive light from the waveguide 216 and redirect the light through the lens 90 and into the reflector 76, which redirects the light into the photonic assembly 74. In other embodiments, the reflector 76 / 218 and the corresponding lens 90 can be configured to transmit light in only one direction (e.g., from the optical package 100 to the composite interposer 200, or vice versa).

[0073] In some embodiments, each reflector 76 has a corresponding lens 90 and a corresponding reflector 218. For example, referring to Fig.12 , reflector 76A may correspond to lens 90A and reflector 218A, and reflector 76B may correspond to lens 90B and reflector 218B. In some embodiments, corresponding reflectors 76 / 218 may be vertically aligned, such as Fig.13 . In some instances, the corresponding reflectors 76 / 218 can be considered to be "optically coupled". In other embodiments, lens 90 can be attached to composite interposer 200 and not attached to optical package 100 (not shown separately). As previously described, the use of laser writing lens 90 can improve transmission efficiency and improve optical coupling, such as the optical coupling between reflectors 76 and 218. For example, the use of laser writing lens 90 as described herein can enable greater vertical light conversion offset tolerance between optical package 100 and composite interposer 200.

[0074] Fig.14 4 shows an optical system 300 attached to a substrate 410 to form a photonic structure 400 according to some embodiments. In other embodiments, multiple optical systems 300 may be attached to the substrate 410. The optical system 300 may be similar to Fig.12, or may be similar to other optical systems described herein. In some embodiments, substrate 410 includes conductive pads, conductive wiring, and / or other conductive components that provide interconnection and electrical wiring. In some embodiments, substrate 410 may include an interposer, a semiconductor substrate (e.g., a wafer), a redistribution structure, an interconnect substrate, a core substrate, a printed circuit board (PCB), etc. In some embodiments, substrate 410 includes active and / or passive devices. In other embodiments, substrate 410 has no active and / or passive devices.

[0075] In some embodiments, the conductive connectors 224 of the optical system 300 are placed on corresponding conductive pads (not separately shown) of the substrate 410, and then a reflow process is performed to bond the optical system 300 to the substrate 410. In this way, the optical system 300 can be electrically connected to the substrate 410. In other embodiments, the optical system 300 can be bonded to the substrate 410 using dielectric-to-dielectric bonding and / or metal-to-metal bonding (e.g., direct bonding, fusion bonding, oxide-to-oxide bonding, hybrid bonding, etc.). In some embodiments, an underfill 412 can be deposited between the optical system 300 and the substrate 410.

[0076] Fig.15 A schematic plan view of a photonic structure 500 including an optical system 300 having an optical package 100 , a device die 302 , and a composite interposer 200 is shown in accordance with some embodiments. Fig.15 The photonic structure 500 shown in FIG. 5 is intended as an illustrative example, and other structures having other configurations, arrangements, sizes, or components are possible. Fig.14 4, except that some additional components are included, such as a laser die 505, a fiber coupler 512, and a memory die 303, which are described in more detail below. For example, the photonic structure 500 includes an optical system 300 connected to a substrate 410, similar to the photonic structure 400. For clarity, some components are not shown. Fig.15 As shown in FIG. 1 , such as some conductive components 214, some waveguides 216, etc. For reference, Fig.16 The photonic structure 500 is shown along Fig.15 A cross-sectional view of the corresponding section shown in .

[0077] refer to Fig.15 , the optical system 300 includes a plurality of optical packages 100 and a plurality of device dies 302 connected to the composite interposer 200, similar to Fig.14 optical system. Fig.15The optical system 300 also includes a memory die 303 in addition to the device die 302. In some embodiments, the device die 302 is a logic die (e.g., an xPU die, etc.), and the memory die 303 is a memory die (e.g., an HBM die, etc.). Other dies or combinations thereof are also possible. In some embodiments, the optical package 100, the device die 302, and the memory die 303 are electrically interconnected by the conductive component 214 of the composite interposer 200. The conductive component 214 can use electrical signals to enable relatively short-distance communication within the photonic structure 500.

[0078] In some embodiments, the optical package 100 has two or more device regions 101, each with an associated device die 302 and / or memory die 303. As an example, device region 101A is associated with and electrically connected to device die 302A and memory die 303A, and device region 101B is associated with and electrically connected to device die 302B and memory die 303B. In some embodiments, Fig.15 Other optical packages 100, device dies 302, and memory dies 303 in the embodiment may have similar associations. However, the various optical packages 100, device dies 302, and memory dies 303 may be interconnected with each other by conductive features 214 in any suitable manner. Other associations, arrangements, or configurations are also possible.

[0079] In some embodiments, the waveguide 216 within the composite interposer 200 is used to transmit optical signals within the photonic structure 500, such as optical signals transmitted between the optical packages 100. The optical signals can be transmitted between the optical packages 100 and the waveguide 216, for example, using the reflector 76, lens 90, and reflector 218 as previously described. In this way, the waveguide 216 can be used to provide relatively long-distance communications within the photonic structure 500 using optical signals. By using electrical signals over short distances and optical signals over long distances, the efficiency, speed, and / or bandwidth of the photonic structure 500 can be improved.

[0080] In some embodiments, the photonic structure 500 may include one or more laser dies 505 that provide optical power within the photonic structure 500. For example, the laser die 505 may include a laser diode that generates optical power, etc. The laser die 505 may be connected to the composite interposer 200 and may couple the optical power into the waveguide 216. In some embodiments, the optical power of the laser die 505 is coupled into the waveguide 216 using a reflector and / or a lens (not shown), similar to that described for the optical package 100. Other techniques for coupling optical power, such as the use of a grating coupler or an evanescent coupler, are also possible. In other embodiments, the laser die 505 is not present.

[0081] In some embodiments, a fiber coupler 512 may be attached to the photonic structure 500, which facilitates communication between the photonic structure 500 and the optical fiber 514. The optical fiber 514 may include one or more optical fibers, which may be an array, etc. The fiber coupler 512 may be configured to couple an optical signal from the photonic structure 500 into the optical fiber 514 and / or couple an optical signal from the optical fiber 514 to a fiber array unit (FAU) in the photonic structure 500, etc. For example, the fiber coupler 512 may be optically coupled to the waveguide 216. In some embodiments, the fiber coupler 512 is coupled to the waveguide 216 using a reflector and / or a lens (not shown), similar to that described for the optical package 100. Other techniques (such as the use of a grating coupler or an evanescent coupler) are also possible. In some embodiments, the photonic structure 500 receives the optical power provided by the optical fiber 514 through the fiber coupler 512. In other embodiments, there is no fiber coupler 512, or a plurality of fiber couplers 512 may be used.

[0082] Fig.17 and Fig.18 An enlarged portion of optical system 300 is shown, according to some embodiments. Figure 17 to Figure 18 The enlarged portion shown in Fig.13 The enlarged portion shown is different in that Fig.17 The embodiment includes two lenses 90A-90B, and Fig.18 The embodiment does not include lens 90. It should be noted that any suitable embodiment described in the embodiments of the present disclosure can be configured to have a lens (e.g., similar to Fig.16 ), lens pairs (e.g., similar to Fig.17 ), or no lens (e.g., similar to Fig.18 ), even though such a configuration is not shown separately.

[0083] First reference Fig.17, an optical system 300 is shown in which a first lens 90A is attached to an optical package 100 and a second lens 90B is attached to a composite interposer 200. The first lens 90A and the second lens 90B can be laser-written lenses similar to those previously described for lens 90. A layer of optical glue 92A can be deposited on lens 90A, and a layer of optical glue 92B can be deposited on lens 90B. The layers of optical glue 92A-92B can be deposited before connecting the optical package 100 to the composite interposer 200. In other embodiments, only one layer of optical glue 92 is deposited on one lens 90A or 90B, and during the connection of the optical package 100 to the composite interposer 200, the other lens 90A-90B is covered by the optical glue 92. In some instances, using a pair of lenses 90A-90B instead of a single lens 90 can improve the transmission efficiency or offset tolerance between the optical package 100 and the composite interposer 200.

[0084] refer to Fig.18 In some embodiments, lens 90 is not present, but a layer of optical glue 92 is present between optical package 100 and composite interposer 200. In such embodiments, optical signals between optical package 100 and composite interposer 200 may be transmitted through optical glue 92. In such embodiments, a layer of optical glue 92 may be deposited on optical package 100 and / or on composite interposer 200. In some instances, omitting lens 90 may allow for a smaller distance (e.g., distance D1) between optical package 100 and composite interposer 200.

[0085] Fig.19 A photonic structure 600 is shown in accordance with some embodiments. Fig.19 The photonic structure 600 is similar to Fig.16 The photonic structure 500 is different in that the optical system 602 includes a redistribution interposer 650 instead of the composite interposer 200. For example, the photonic structure 600 may include the optical package 100, the device die 302, the memory die 303, etc. connected or otherwise attached to the redistribution interposer 650. Fig.19 The photonic structure 600 shown in FIG. 6 is an example, and other configurations are possible.

[0086] The redistribution interposer 650 may be, for example, an organic interposer, a redistribution structure, or the like. The redistribution interposer 650 may include a plurality of redistribution layers 654 formed in a plurality of dielectric layers 653 (not shown separately). The redistribution layers 654 may include conductive lines, conductive vias, conductive pads, and the like. The redistribution layers 654 may be formed of a conductive material, such as a metal, such as copper, cobalt, aluminum, gold, combinations thereof, and the like. In some embodiments, the dielectric layer 653 may include a polymer, such as polybenzoxazole (PBO), polyimide, a benzocyclobutene (BCB)-based polymer, and the like. In other embodiments, the dielectric layer 653 may include other suitable dielectric materials, such as silicon oxide, and the like. The redistribution layers 654 may be formed using any suitable process, such as deposition, plating, inlaying, dual inlaying, and the like. In some embodiments, the redistribution interposer 650 is substantially free of active and passive devices.

[0087] In some embodiments, the redistribution interposer 650 also includes a waveguide 656 and a reflector 658 formed in the dielectric layer 653. The waveguide 656 can be similar to the waveguide 216 described previously and can be formed using similar techniques. For example, in some embodiments, the waveguide 656 can include silicon nitride. The reflector 658 can be similar to the reflector 218 described previously and can be formed using similar techniques. For example, in some embodiments, the reflector 658 can be formed by patterning a dielectric layer 653 made of a photosensitive material and then depositing a metal material. In some embodiments, the dielectric layer 653 can be patterned using grayscale lithography. Similar to the composite interposer 200, the reflector 658 can facilitate the transmission of optical signals between the redistribution interposer 650 and the optical package 100. For example, the optical signal can be transmitted to the reflector 658 through the lens 90 and enter the corresponding waveguide 656.

[0088] In some embodiments, the redistribution interposer 650 may be formed on a carrier substrate (not shown). The optical package 100, the device die 302, the memory die 303, or other components may be connected to the redistribution interposer 650 using techniques similar to those described for connecting the components to the composite interposer 200. An encapsulant 306 may be formed over the components and the redistribution interposer 650. The carrier substrate may then be removed or etched to expose the redistribution interposer 650. Conductive connectors 655 may be formed on the redistribution interposer 650, which may be similar to the conductive connectors 224 described previously. The redistribution interposer 650 may be connected to the substrate 410 using the conductive connectors 655, and an underfill 412 may be deposited between the redistribution interposer 650 and the substrate 410. This is an example, and the redistribution interposer 650 and / or the photonic structure 600 may be formed using other process steps, materials, or techniques.

[0089] Fig. 20 and Fig.21 An enlarged portion of an optical system 600 is shown, according to some embodiments. Figure 20 to Figure 21 The enlarged portion shown in Fig.13 The difference is that Fig. 20 The embodiment includes two lenses 90A-90B, and Fig.21 The embodiment does not include lens 90. First, refer to Fig. 20 , an optical system 600 is shown in which a first lens 90A is attached to an optical package 100 and a second lens 90B is attached to a redistribution intermediary 650. The first lens 90A and the second lens 90B can be laser-written lenses similar to those previously described. A layer of optical glue 92A can be deposited on lens 90A, and a layer of optical glue 92B can be deposited on lens 90B. The layers of optical glue 92A-92B can be deposited before connecting the optical package 100 to the redistribution intermediary 650. In other embodiments, only one layer of optical glue 92 is deposited on one lens 90A or 92B, and during the connection of the optical package 100 to the redistribution intermediary 650, the other lens 90A-90B is covered by the optical glue 92. In some instances, using a pair of lenses 90A-90B instead of a single lens 90 can improve the transmission efficiency or offset tolerance between the optical package 100 and the redistribution intermediary 650.

[0090] refer to Fig.21 In some embodiments, the lens 90 is not present, but a layer of optical glue 92 is present between the optical package 100 and the redistribution interposer 650. In such embodiments, optical signals between the optical package 100 and the redistribution interposer 650 may be transmitted through the optical glue 92. In such embodiments, a layer of optical glue 92 may be deposited on the optical package 100 and / or on the redistribution interposer 650. In some instances, omitting the lens 90 may allow for a smaller distance between the optical package 100 and the redistribution interposer 650.

[0091] Fig. 22 A photonic structure 600 is shown in accordance with some embodiments. Fig. 22 The photonic structure 600 is similar to Fig.19600, except that a local interconnect 652 is formed in a redistribution interposer 650 of the optical system 602. The local interconnect 652 can be, for example, a chip, a chiplet, a local silicon interconnect, an interconnect structure, etc. that provides additional electrical interconnection within the redistribution interposer 650. For example, the local interconnect 652 can provide electrical connections between adjacent components, such as the optical package 100, the device die 302, and / or the memory die 303. The local interconnect 652 can include conductive features (e.g., wires, vias, pads, etc.) formed in a dielectric layer. The conductive features can be formed using suitable techniques, such as damascene, dual damascene, etc. For example, in some instances, the local interconnect 652 can include an interconnect structure on a substrate, which can have through substrate vias (TSVs) therein, but other local interconnects 652 are also possible. In some embodiments, the local interconnect 652 can be placed on a carrier substrate (not shown), and then the redistribution interposer 650 can be formed around the local interconnect 652. In some examples, conductive features of local interconnect 652 may have smaller line widths and / or pitches than redistribution layers 654 of redistribution interposer 650, which may allow for greater density of electrical routing. Local interconnect 652 may or may not include passive or active devices. Fig. 22 The local interconnects 652 shown in are illustrative examples, and other local interconnects 652 or configurations thereof are possible.

[0092] Fig.23 , Fig.24 , Fig.25 , Fig.26 and Fig. 27 700 according to some embodiments. Fig. 22 The photonic structure 600 described above is different in that the optical system 702 includes one or more optical packages 750 within the redistribution interposer 704 and one or more bridge structures 710 attached to the optical packages 750. In some embodiments, optical communication within the optical system 702 is not provided by waveguides formed in the redistribution interposer 704, but is provided by waveguides 722 formed in the bridge structures 710. The bridge structures 710 can also allow optical communication between separate optical systems 702, as described in more detail below. Fig.23 shows a cross-sectional view of a bridge structure 710, Fig.24 shows a cross-sectional view of an optical package 750, Fig.25 shows a cross-sectional view of a photonic structure 700, Fig.26 An enlarged view of the optical system 702 is shown, and Fig. 27A schematic plan view of a photonic structure 700 is shown. Some components of the photonic structure 700 and / or process steps for the photonic structure 700 or its components are similar to those previously described, and thus some previously described details may not be repeated.

[0093] Fig.23 A bridge structure 710 is shown according to some embodiments. The bridge structure 710 is used to provide transmission of optical signals between components of the photonic structure 700. In some embodiments, the bridge structure 710 includes an optical interconnect structure 714 formed on a substrate 712. The optical interconnect structure 714 can be similar to the optical interconnect structure 70 of the optical package 100 and can be formed using similar materials and / or techniques. For example, the substrate 712 can be similar to the first substrate 10 of the optical package 100 (see Figure 1 ), and may be, for example, a silicon substrate, but other substrates are possible. The optical interconnect structure 714 may include a waveguide 722 and a reflector 724 formed in a dielectric layer 715. The waveguide 722 and the reflector 724 may be similar to the optical interconnect structure 70 (see Figure 6 ) and can be formed using similar techniques. Dielectric layer 715 can be similar to dielectric layer 72. For example, in some embodiments, dielectric layer 715 can be a silicon oxide layer, but other materials are also possible. Reflector 724 is configured to receive light from waveguide 722 and redirect it vertically and / or receive light and redirect it into waveguide 722, similar to photonic component 74 and reflector 76 of optical interconnect structure 70.

[0094] In some embodiments, a passivation layer 716 may be formed on the optical interconnect structure 714, and a UBM 717 may be formed in the passivation layer 716. The passivation layer 716 and the UBM 717 may be similar to the passivation layer 82 and the UBM 84 of the optical package 100. A conductive connector 718 may be formed on the UBM 717, and the conductive connector 718 may be similar to the conductive connector 96 of the optical package 100. In some instances, the bridge structure 710 has no electrical wiring, and the conductive connector 718 is used to make a physical attachment to the following components (e.g., the optical package 750). One or more lenses 90 may be attached to the bridge structure 710, wherein each lens 90 is configured to transmit light to the reflector 724 or receive light from the reflector 724. In some embodiments, the lens 90 may be a laser write lens. This is an example, and other bridge structures 710 are also possible.

[0095] Fig.247 shows an optical package 750 according to some embodiments. In some embodiments, the optical package 750 includes an optical interposer 760 formed on an optical interconnect structure 770. In some embodiments, the optical package 750 also includes an electronic die 752 bonded to the optical interposer 760. The optical interposer 760 can be similar to the optical interposer 50 (see Figure 3 ), and can be formed using similar techniques. For example, the optical interposer 760 may include a photonic component 762 and a conductive component 764, which may be similar to those previously described for Figure 3 The electronic die 752 may be similar to the photonic components 18 and conductive members 24 described above. Figure 4 For example, the electronic die 752 can be bonded (e.g., using dielectric-to-dielectric bonding and / or metal-to-metal bonding) to the optical interposer 760, and the electronic die 752 can be electrically connected to the photonic assembly 762 via the conductive features 764. In some embodiments, the electronic die 752 can include a through-substrate via 756, which in some instances can be electrically connected to the optical interposer 760.

[0096] In some embodiments, the optical interconnect structure 770 of the optical package 750 can be similar to the optical interconnect structure 70 (see Figure 6 ), and can be formed using similar materials or techniques. For example, the optical interconnect structure 770 may include a waveguide 772 and a reflector 774 formed in a dielectric layer 773. The waveguide 772 and the reflector 774 may be similar to the photonic component 74 and the reflector 76 of the optical interconnect structure 70, and may be formed using similar techniques. The dielectric layer 773 may be similar to the dielectric layer 72. For example, in some embodiments, the dielectric layer 773 may be a silicon oxide layer, but other materials are also possible. In some embodiments, one or more waveguides 772 may be optically coupled to the photonic component 762. The reflector 774 is configured to receive light from the waveguide 772 and redirect it vertically and / or receive light and redirect it into the waveguide 772, similar to the photonic component 74 and the reflector 76 of the optical interconnect structure 70. In some embodiments, the optical package 750 also includes a through hole 776 extending through the optical interconnect structure 770 to connect to the conductive component 764 of the optical interposer 760.

[0097] In some embodiments, the optical package 750 can include a plurality of device regions 751 (e.g., device regions 751A-751B). The device regions 751 can be similar to the device regions 101 previously described for the optical package 100. For example, each device region 751 can be a region of the optical package 750 that is at least partially dedicated to processing a specific optical signal. In this way, the optical package 750 can provide optical signal processing and functionality similar to that previously described for the optical package 100.

[0098] Fig.25 700 according to some embodiments. As mentioned above, the photonic structure 700 is similar to the photonic structure 700 for Fig. 22 The photonic structure 600 described above differs in that the redistribution interposer 704 includes an optical package 750 and the bridge structure 710 is attached to the optical package 750. The redistribution interposer 704 may be similar to the photonic structure 600 described above. Fig. 22 The redistribution interposer 650 described above may include, for example, a plurality of redistribution layers 654 formed in a plurality of dielectric layers 653. The local interconnects 652 may be located within the redistribution interposer 704, which may be similar to the previously described Fig. 22 Local interconnect 652 is depicted. For example, local interconnect 652 can electrically connect device die 302, memory die 303, and / or conductive connector 655. In some embodiments, redistribution interposer 704 is free of waveguides and / or other photonic components.

[0099] One or more optical packages 750 are formed within the redistribution interposer 704. For example, in some embodiments, the optical packages 750 (and / or local interconnects 652) can be placed on a carrier substrate, and then the redistribution interposer 704 is formed around them. In other embodiments, the redistribution interposer 704 can be formed first, then an opening can be formed in the redistribution interposer 704, and then the optical packages 750 (and / or local interconnects 652) can be placed in the opening. In some embodiments, the optical packages 750 are electrically connected to the conductive connectors 655. In some embodiments, the top and / or bottom surfaces of the redistribution interposer 704 and the optical packages 750 can be flush or coplanar.

[0100] After forming the redistribution interposer 704, the local interconnect structure 652, and the optical package 750, the device die 302, the memory die 303, and / or the bridge structure 710 can be attached. The device die 302, the memory die 303, and the bridge structure 710 can be attached using their corresponding conductive connectors, as previously described. For example, the device die 302, the memory die 303, and the bridge structure 710 can be placed, and then a reflow process can be performed. In some embodiments, the optical package 750 may include a bonding pad (not shown) to facilitate bonding with the conductive connector. In some embodiments, the device die 302 and the memory die 303 can be electrically connected to the redistribution interposer 704, the local interconnect structure 652, and / or the optical package 750.

[0101] Fig.26 An enlarged portion of an optical system 702 is shown in accordance with some embodiments. For clarity, not all components have been labeled. Similar to other embodiments herein, the use of reflectors 724 / 774 and / or lenses 90 can facilitate efficient transmission of light between the optical package 750 and the bridge structure 710. For example, the reflector 724 in the bridge structure 710 can be configured to receive light from the waveguide 722 and redirect the received light through the lens 90, such as by Fig.26 . The corresponding reflector 774 in the optical package 750 can be configured to receive light from the lens 90 and redirect the light into the waveguide 772. Similarly, the reflector 774 can receive light from the waveguide 772 and redirect the light through the lens 90 and into the reflector 724, which redirects the light into the waveguide 722. In this way, optical communication and optical processing can be implemented through the optical package 750 and the bridge structure 710 of the photonic structure 700.

[0102] like Fig.26 As shown in FIG. 1 , in some embodiments, the optical glue 92 can cover more than one lens 90. In other embodiments, a lens pair can be formed (see FIG. 1 ). Fig.17 ), or the lens may not exist (see Fig.18 ). Additionally, in some embodiments, vias 776 may be electrically connected to components such as device die 302, memory die 303, etc. This is an example, and other configurations or arrangements are possible.

[0103] Fig. 27 A schematic plan view of a photonic structure 700 including a plurality of optical systems 702A-702B is shown in accordance with some embodiments. Fig. 27The photonic structure 700 shown in is intended as an illustrative example, and other structures having other configurations, arrangements, sizes, or components are possible. For example, the photonic structure 700 may include another number of optical packages 750, bridge structures 710, or other components that may have a different arrangement than shown. For clarity, Fig. 27 Some components are not shown, such as some conductive components, some waveguides, etc. For reference, Fig.25 The photonic structure 700 is shown along Fig. 27 A cross-sectional view of the corresponding section shown in .

[0104] The optical system 702A-702B of the photonic structure 700 may be similar to that for Fig.25 The optical system 750 is described. For example, each of the optical systems 702A-702B includes a corresponding redistribution interposer 704A-704B. The redistribution interposer 704A-704B of each optical system 702A-702B is connected to the package substrate 410, similar to Fig.25 The optical system 702 shown in FIG. The optical package 750 and / or the local interconnect 652 ( Fig. 27 The device die 302 and the memory die 303 are connected to the redistribution interposers 704A-704B and can be electrically interconnected through the redistribution layers 654 (not shown) within the redistribution interposers 704A-704B and / or through the local interconnects 652 within the redistribution interposers 704A-704B. In some embodiments, a laser die (not shown), a fiber coupler 512, or other components can be attached to one or more redistribution interposers 704A-704B.

[0105] According to some embodiments, the photonic structure 700 includes a plurality of bridge structures 710. The bridge structures 710 can each be attached to a plurality of optical packages 750, which can include a plurality of optical packages 750 of the same optical system 702A or 702B and / or a plurality of optical packages 750 of different optical systems 702A and 702B. The waveguide 722 of the bridge structure 710 can be optically coupled to the underlying optical package 750 using a reflector 724 / 774 and / or a lens 90, as previously described with respect to Fig.26In some embodiments, optical signals can be transmitted between optical packages 750 via waveguides 722 of bridge structure 710. In some embodiments, optical signals can be communicated between optical packages 750 of different optical systems 702 via bridge structure 710. In some embodiments, bridge structure 710 can be used to transmit optical signals between fiber coupler 512 and optical package 750. In some embodiments, bridge structure 710 can be used to transmit optical power from a laser die (not shown) to optical package 750. Bridge structure 710 can overlap with one or more optical packages 750, such as Fig. 27 . In some instances, the use of bridge structure 710 to transmit optical signals (e.g., in place of waveguides in redistribution interposer 704) can allow for more efficient transmission of optical signals, improved waveguide manufacturing, reduced optical losses, and reduced structure size. In this way, the use of optical package 750 and bridge structure 710 as described herein can provide relatively long-distance communication within photonic structure 700 using optical signals. By using electrical signals over short distances and optical signals over long distances, the efficiency, speed, and / or bandwidth of photonic structure 700 can be improved.

[0106] Fig.28 A photonic structure 800 is shown according to some embodiments. The photonic structure 800 is similar to the Fig.14 The photonic structure 400 described above is different in that direct bonding (e.g., fusion bonding, dielectric-to-dielectric bonding, metal-to-metal bonding, etc.) is used to connect the components instead of using conductive connectors. For example, the photonic structure 800 includes a composite interposer 820 similar to the previously described composite interposer 200. For example, the composite interposer 820 includes conductive components 214, waveguides 216, and / or reflectors 218 formed in multiple dielectric layers 212. The composite interposer 820 may also include bonding pads (not separately labeled) formed in the topmost dielectric layer 212, which may also be considered a bonding layer. The optical package 810 may be similar to the optical package 810 described above. Figure 7 The optical package 100 is described. For example, the optical package 810 may include a photonic component 74 (e.g., a waveguide) and a reflector 76 formed in a plurality of dielectric layers 72. The optical package 810 may also include a bonding pad (not separately labeled) formed in the bottommost dielectric layer 72, which may also be considered a bonding layer.

[0107] In the photonic structure 800, no conductive connectors are formed on the optical package 810, and the lens is not attached to the optical package 810. The optical package 810 is directly bonded to the composite interposer 820 using dielectric-to-dielectric bonding and / or metal-to-metal bonding. For example, the bonding layer 72 of the optical package 810 can be bonded to the bonding layer 212 of the composite interposer 820 using dielectric-to-dielectric bonding, and the bonding pads of the optical package 810 can be bonded to the bonding pads of the composite interposer 820 using metal-to-metal bonding. The direct bonding process can be similar to that previously described for the optical package 810. Figure 4 In some embodiments, other components such as device die 302 may also be directly bonded to composite interposer 820. Direct bonding of components such as described for photonic structure 800 may be used in any suitable embodiment described herein.

[0108] Fig.29 An enlarged view of a portion of optical system 802 is shown in accordance with some embodiments. Fig.29 The optical system 802 may be similar to Fig.28 In some embodiments, the reflector 76 can be configured to receive light from the photonic assembly 74 and reflect the received light vertically through the dielectric layer 72 and into the dielectric layer 212, as described by Fig.29 . Reflector 218 can be configured to receive light and couple it into waveguide 216. Similarly, reflector 218 can be configured to receive light from waveguide 216, redirect it vertically through dielectric layer 212 and into dielectric layer 72, where the light is coupled into photonic assembly 74 through reflector 76. In some examples, directly bonding optical package 810 to composite interposer 820 can improve transmission efficiency, reduce signal loss, and reduce structure size.

[0109] Embodiments of the present disclosure have some advantageous features. Forming a reflector with a corresponding waveguide in an optical structure can allow light from the waveguide to be transmitted vertically between optical structures. In addition, the reflector can be configured to receive vertically transmitted light and couple it to the corresponding waveguide of the same optical structure. Combining the waveguide and the corresponding reflector in this way can allow effective transmission of optical signals between the above optical structures. In addition, a lens can be formed between the optical structures, which shapes or focuses light between the corresponding reflectors, improves transmission efficiency and increases offset tolerance. Using laser writing technology to form a lens can allow a more efficient and smaller lens design. In some instances, the laser writing lens can allow a larger vertical distance between the above optical structures, and can be small enough to allow the optical structure to be connected using solder bumps, etc. with reduced light loss. For example, in some instances, the laser writing lens can allow optical signals to be vertically transmitted across a vertical distance of about 30 μm or longer. Reflectors and / or lenses can be used to couple optical signals into a waveguide that effectively transmits optical signals over long distances. By using electrical signals over short distances and optical signals over longer distances, the efficiency, speed and / or bandwidth of a device, package or structure may be improved.

[0110] In an embodiment of the present disclosure, a package includes: an interposer, the interposer includes a first waveguide and a first reflector optically coupled to the first waveguide; and an optical package attached to the interposer, wherein the optical package includes: a second waveguide; and a second reflector, the second reflector optically coupled to the second waveguide, wherein the second reflector is vertically aligned with the first reflector. In an embodiment, the package includes a first lens located between the interposer and the optical package, wherein the first lens, the first reflector, and the second reflector are vertically aligned. In an embodiment, the first lens is attached to the optical package, and the package includes a second lens located between the interposer and the optical package, wherein the second lens and the first lens are vertically aligned. In an embodiment, the first lens includes a laser writing material. In an embodiment, the optical package is attached to the interposer by solder bumps. In an embodiment, the optical package includes a photonic component and an electronic die, wherein the photonic component is optically coupled to the first waveguide and electrically coupled to the electronic die. In an embodiment, the package includes a logic die connected to the interposer. In an embodiment, the first waveguide and the second waveguide include silicon nitride.

[0111] In an embodiment of the present disclosure, a package includes: a first optical structure, the first optical structure including an electronic tube die, a wire, a photonic component, a first waveguide and a first reflective structure; and a second optical structure, bonded to the first optical structure, wherein the second optical structure includes a second waveguide and a second reflective structure, wherein the independent first reflective structure corresponds to the independent second reflective structure respectively. In an embodiment, the first reflective structure includes a metal layer. In an embodiment, the second optical structure has no wire. In an embodiment, the first optical structure is laterally surrounded by a redistribution structure. In an embodiment, the package includes a local interconnect structure located within the redistribution structure. In an embodiment, the package includes a third optical structure, the third optical structure includes a third waveguide and a third reflective structure, wherein the second optical structure is bonded to the third optical structure, wherein the independent third reflective structure corresponds to the independent second reflective structure respectively. In an embodiment, the second optical structure overlaps the first optical structure and the third optical structure. In an embodiment, the package includes a lens attached to the second optical structure, wherein the lens is located between the first optical structure and the second optical structure.

[0112] In an embodiment of the present disclosure, a method includes: forming an optical interposer including an interconnect structure above a photonic component, wherein the interconnect structure is electrically coupled to the photonic component; bonding an electronic die to a top side of the optical interposer, wherein the electronic die is electrically coupled to the interconnect structure; forming an optical interconnect structure on a bottom side of the optical interposer, wherein the optical interconnect structure includes a first waveguide and a first reflector, wherein the first reflector is optically coupled to the first waveguide; performing a laser writing process to form a lens; attaching the lens to the bottom side of the optical interconnect structure, wherein the lens is optically coupled to the first reflector; and forming a conductive connector on the bottom side of the optical interconnect structure. In an embodiment, the method includes attaching the conductive connector to the interposer, wherein the interposer includes a second waveguide and a second reflector, wherein the second reflector is optically coupled to the lens after attaching the conductive connector. In an embodiment, the method includes performing a grayscale lithography process to form the first reflector. In an embodiment, attaching the lens includes depositing an optical glue on the bottom side of the optical interconnect structure.

[0113] Some embodiments of the present application provide a package, comprising: an intermediary layer, comprising: a first waveguide; and a first reflector, the first reflector being optically coupled to the first waveguide; an optical package, attached to the intermediary layer, wherein the optical package comprises: a second waveguide; and a second reflector, the second reflector being optically coupled to the second waveguide, wherein the second reflector is vertically aligned with the first reflector.

[0114] In some embodiments, the package further comprises a first lens located between the interposer and the optical package, wherein the first lens, the first reflector, and the second reflector are vertically aligned. In some embodiments, the first lens is attached to the optical package and further comprises a second lens located between the interposer and the optical package, wherein the second lens and the first lens are vertically aligned. In some embodiments, the first lens comprises a laser writing material. In some embodiments, the optical package is attached to the interposer via solder bumps. In some embodiments, the optical package further comprises a photonic component and an electronic die, wherein the photonic component is optically coupled to the first waveguide and electrically coupled to the electronic die. In some embodiments, the package further comprises a logic die connected to the interposer. In some embodiments, the first waveguide and the second waveguide comprise silicon nitride.

[0115] Other embodiments of the present application provide a package, comprising: a first optical structure, including an electronic tube core, a plurality of wires, a plurality of photonic components, a plurality of first waveguides and a plurality of first reflective structures; and a second optical structure, joined to the first optical structure, wherein the second optical structure comprises a plurality of second waveguides and a plurality of second reflective structures, wherein the independent first reflective structures of the plurality of first reflective structures respectively correspond to the independent second reflective structures of the plurality of second reflective structures.

[0116] In some embodiments, the first reflective structure of the plurality of first reflective structures comprises a metal layer. In some embodiments, the second optical structure has no wires. In some embodiments, the first optical structure is laterally surrounded by a redistribution structure. In some embodiments, the package further comprises a local interconnect structure within the redistribution structure. In some embodiments, the package further comprises: a third optical structure comprising a plurality of third waveguides and a plurality of third reflective structures, wherein the second optical structure is bonded to the third optical structure, wherein the independent third reflective structures of the plurality of third reflective structures correspond to the independent second reflective structures of the plurality of second reflective structures, respectively. In some embodiments, the second optical structure overlaps the first optical structure and the third optical structure. In some embodiments, the package further comprises a plurality of lenses attached to the second optical structure, wherein the lenses of the plurality of lenses are located between the first optical structure and the second optical structure.

[0117] Still other embodiments of the present application provide a method for forming a package, comprising: forming an optical interposer including an interconnect structure above a photonic component, wherein the interconnect structure is electrically coupled to the photonic component; bonding an electronic die to a top side of the optical interposer, wherein the electronic die is electrically coupled to the interconnect structure; forming an optical interconnect structure on a bottom side of the optical interposer, wherein the optical interconnect structure includes a first waveguide and a first reflector, wherein the first reflector is optically coupled to the first waveguide; performing a laser writing process to form a lens; attaching the lens to the bottom side of the optical interconnect structure, wherein the lens is optically coupled to the first reflector; and forming a conductive connector on the bottom side of the optical interconnect structure.

[0118] In some embodiments, the method further comprises attaching the conductive connector to an interposer, wherein the interposer comprises a second waveguide and a second reflector, wherein the second reflector is optically coupled to the lens after attaching the conductive connector. In some embodiments, the method further comprises performing a grayscale lithography process to form the first reflector. In some embodiments, attaching the lens comprises depositing an optical glue on a bottom side of the optical interconnect structure.

[0119] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the embodiments of the present disclosure. Those skilled in the art should understand that they can easily use the embodiments of the present disclosure as a basis to design or modify other processes and structures for performing the same purpose and / or achieving the same advantages as the embodiments introduced herein. Those skilled in the art should also appreciate that such equivalent constructions do not deviate from the spirit and scope of the embodiments of the present disclosure, and that they can make various changes, substitutions and modifications herein without departing from the spirit and scope of the embodiments of the present disclosure.

Claims

1. A package comprising: The intermediary layer includes: a first waveguide; and a first reflector optically coupled to the first waveguide; an optical package attached to the interposer, wherein the optical package comprises: a second waveguide; and A second reflector is optically coupled to the second waveguide, wherein the second reflector is perpendicularly aligned with the first reflector.

2. The package of claim 1 , further comprising a first lens located between the interposer and the optical package, wherein: The first lens, the first reflector, and the second reflector are vertically aligned.

3. The package according to claim 2, wherein: The first lens is attached to the optical package and further includes a second lens located between the interposer and the optical package, wherein the second lens and the first lens are vertically aligned.

4. The package according to claim 2, wherein: The first lens includes a laser-write material.

5. The package according to claim 1, wherein: The optical package is attached to the interposer via solder bumps.

6. The package according to claim 1, wherein: The optical package also includes a photonic assembly and an electronic die, wherein the photonic assembly is optically coupled to the first waveguide and electrically coupled to the electronic die. 7 . The package of claim 1 , further comprising a logic die coupled to the interposer.

8. The package according to claim 1, wherein: The first waveguide and the second waveguide include silicon nitride.

9. A package comprising: a first optical structure comprising an electronic die, a plurality of conductors, a plurality of photonic components, a plurality of first waveguides, and a plurality of first reflective structures; as well as A second optical structure is coupled to the first optical structure, wherein the second optical structure comprises a plurality of second waveguides and a plurality of second reflective structures, wherein the independent first reflective structures of the plurality of first reflective structures correspond to the independent second reflective structures of the plurality of second reflective structures, respectively.

10. A method of forming a package, comprising: forming an optical interposer including an interconnect structure over a photonic component, wherein the interconnect structure is electrically coupled to the photonic component; bonding an electronic die to a top side of the optical interposer, wherein the electronic die is electrically coupled to the interconnect structure; forming an optical interconnect structure on a bottom side of the optical interposer, wherein the optical interconnect structure comprises a first waveguide and a first reflector, wherein the first reflector is optically coupled to the first waveguide; performing a laser writing process to form a lens; attaching the lens to a bottom side of the optical interconnect structure, wherein the lens is optically coupled to the first reflector; and Conductive connections are formed on the bottom side of the optical interconnect structure.

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