System and method for optimizing full horizontal scanning beam distance

Abstract

Provided herein is an approach to optimize the full horizontal scanning beam distance of an accelerator beam. In one approach, a method may include positioning a first Faraday cup along a first side of an expected beam scanning region; positioning a second Faraday cup along a second side of the intended beam scanning region; scanning the ion beam along the first side and the second side of the expected beam scanning area; measuring a first beam current of the ion beam at the first Faraday cup and a second beam current of the ion beam at the second Faraday cup; and determining an optimal scanning distance of the ion beam across the expected beam scanning region based on the first beam current and the second beam current.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. patent application serial number 17 / 827,204, filed on May 27, 2022, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates generally to ion beam processing techniques, and more particularly to systems and methods for optimizing full horizontal scan beam distance. Background Art

[0004] Various types of processing equipment are used today to treat or process substrates using ions. To process a substrate (e.g., a semiconductor substrate), ions may be used to etch layers or features on the substrate. Ions may also be used to deposit layers or structures on a substrate, implant species into a substrate, or amorphize a substrate. Techniques have also been developed to monitor the processing of a substrate in order to control the processing of the substrate.

[0005] The horizontal scan distance is used to scan the beam across the wafer diameter. Current methods use an estimate of the beam edge to estimate the total required horizontal scan distance. However, since actual measurements are not taken to confirm that the beam is being scanned adequately across the wafer, overscanning or underscanning of the wafer often occurs.

[0006] Therefore, it would be beneficial to ensure that the beam is adequately scanned over the entire wafer diameter to provide uniform implantation and to optimize the beam current utilized during wafer implantation.It is with this consideration and others in mind that the present disclosure is provided. Summary of the invention

[0007] This Summary is provided to introduce a selection of concepts in a simplified form that are further described in the Detailed Description below. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be an aid in determining the scope of the claimed subject matter.

[0008] In one embodiment, a method may include: providing a first Faraday cup position along a first side of an intended beam scanning area; providing a second Faraday cup position along a second side of the intended beam scanning area; scanning an ion beam along the first side and the second side of the intended beam scanning area; measuring a first beam current of the ion beam at the first Faraday cup position and measuring a second beam current of the ion beam at the second Faraday cup position; and determining an optimal scanning distance of the ion beam across the intended beam scanning area based on the first beam current and the second beam current.

[0009] In another embodiment, an apparatus for optimizing a scanned beam distance of an ion beam may include: a beam scanner operable to scan a point ion beam relative to an intended beam scan area; a Faraday cup positioned along a first side of the intended beam scan area, and a Faraday profiler positioned along a second side of the intended beam scan area, wherein the Faraday cup is operable to measure a first beam current of the point ion beam, and the Faraday profiler is operable to measure a second beam current of the point ion beam. The apparatus may also include a beam calibration assembly including a controller and a memory, the memory including a calibration routine, the calibration routine running on the controller to determine an optimal scan distance of the ion beam based on the first beam current and the second beam current.

[0010] In yet another embodiment, a non-transitory computer-readable storage medium includes instructions that, when executed by a computer, cause the computer to: scan a point ion beam relative to an intended beam scanning area using a beam scanner; measure a first beam current of the point ion beam at a first Faraday cup positioned along a first side of the intended beam scanning area, and measure a second beam current of the point ion beam at a second Faraday cup positioned along a second side of the intended beam scanning area. The computer-readable storage medium also includes instructions that, when executed by the computer, cause the computer to determine an optimal scanning distance for the ion beam based on the first beam current and the second beam current. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Embodiments of the present disclosure will now be described by way of example with reference to the accompanying drawings, in which:

[0012] Figure 1 A system including a pair of Faraday cup positions for determining a scanned beam distance according to an embodiment of the present disclosure.

[0013] Figure 2A-2B is a graph showing current and multiplier value according to an embodiment of the present disclosure.

[0014] Figure 3 A system including a pair of Faraday cup positions for determining a scanned beam distance according to an embodiment of the present disclosure.

[0015] Figure 3 A system including a pair of Faraday cup positions for determining a scanned beam distance according to an embodiment of the present disclosure.

[0016] Figure 4A A system including a pair of Faraday cup positions for determining a scanned beam distance according to an embodiment of the present disclosure.

[0017] Figure 4B-4C is a graph showing current versus position according to an embodiment of the present disclosure.

[0018] Figure 5A top plan view of a beam-line ion implanter according to various embodiments of the present disclosure is shown in block form.

[0019] Figure 6 An exemplary process flow of a method according to various embodiments of the present disclosure is shown.

[0020] The drawings are not necessarily to scale. The drawings are merely schematic and are not intended to depict specific parameters of the present disclosure. The drawings are not intended to illustrate exemplary embodiments of the present disclosure and are therefore not to be considered limiting of the scope. In the drawings, like numbers represent like elements.

[0021] In addition, for the sake of clarity, some elements in some of the drawings may be omitted or not shown to scale. For the sake of clarity, the cross-sectional views may be in the form of "fragmented" or "close-up" cross-sectional views, omitting some background lines that can only be seen in "real" cross-sectional views. In addition, for the sake of clarity, some reference numbers may be omitted in some drawings. DETAILED DESCRIPTION

[0022] The present embodiment will now be more fully described hereinafter with reference to the accompanying drawings showing some embodiments. The subject matter of the present disclosure can be implemented in many different forms and is not to be considered as being limited to the embodiments described herein. On the contrary, these embodiments are provided so that the present disclosure will be comprehensive and complete, and will fully convey the scope of the subject matter to those skilled in the art. In the accompanying drawings, the same number always refers to the same element.

[0023] The embodiments described herein provide novel techniques for optimizing the horizontal scanning distance of an accelerator beam using beam current measurements from a set of Faraday cups positioned at opposite edges of a wafer. Unlike prior art approaches in which estimates of the beam edge are used to attempt to determine the total required horizontal scanning distance, the disclosed embodiments use actual beam current measurements made using Faraday cups positioned on each side of the wafer to determine the optimal scanning beam distance. This ensures that the beam passes beyond the edge of the wafer and minimizes the additional overscan distance. Advantageously, there is no wasted beam current when the beam leaves the wafer, and the beam current is utilized / optimized during wafer implantation. In addition, the embodiments herein ensure that the beam is fully scanned over the entire wafer diameter to ensure uniform implantation. Moreover, the embodiments herein advantageously ensure accurate measurement of the Faraday cups for implantation monitoring to achieve dose accuracy.

[0024] Figure 1A first embodiment of an apparatus 100 for determining an optimal scan distance for an ion implanter is shown. The apparatus 100 may include a Faraday cup 101 located at a first Faraday cup position 102 along a first side 104 of an intended beam scan area 106, and a Faraday cup or Faraday profiler 103 located at a second Faraday cup position 110 along a second side 112 of the intended beam scan area 106. In some embodiments, only the Faraday cup 101 is present and measurements are taken at multiple positions by a single Faraday cup 101.

[0025] The Faraday cup 101 is generally fixed along the x-direction, while the Faraday profiler 103 can be moved in the horizontal direction along the x-direction, but is not limiting. For example, the Faraday profiler 103 can be positioned within the expected beam scanning area 106 or outside the expected beam scanning area 106. The first Faraday cup 102 can include a first orifice (not shown) that can be operated to receive an indication of the current of the ion beam 114 when the ion beam 114 is scanned in the horizontal direction (e.g., along the x-direction in the direction shown) near the first side 104. The Faraday profiler 103 can similarly measure the current of the ion beam 114 when the ion beam 114 is scanned in the horizontal direction near the second side 112. As will be further described herein, the measurements obtained from the Faraday cup 101 and the measurements obtained from the Faraday profiler 103 can be used to determine when the beam current completely passes through a specific location outside the expected beam scanning area 106, such as the first orifice of the Faraday cup 101. The ion beam 114 may be an accelerator spot beam, but is not limited thereto. In some cases, the left and right edges of the ion beam 114 may be detected as the ion beam 114 passes through the Faraday cup 101 and the Faraday profiler 103. These edges may be about 0.6% of the detected peak value (not the integrated current) of the spot ion beam 114.

[0026] The intended beam scan area 106 may generally correspond to an area of ​​the wafer to be processed (e.g., scanned) by the ion beam 114. During use, the ion beam 114 may be scanned in a horizontal direction (e.g., in an x-direction), while the wafer may be moved in a vertical direction (e.g., along a y-direction). The implantation area 106 may be defined by a perimeter 124, wherein the first side 104 and the second side 112 may correspond to circumferentially opposite points along the perimeter 124. The diameter of the intended beam scan area 106 may extend between the first side 104 and the second side 112. In the illustrated embodiment, the Faraday cup 101 is positioned outside the perimeter 124 in a first overscan area 130, while the Faraday profiler 103 is positioned outside the perimeter 124 in a second overscan area 132. The first overscan region 130 may include a first closed loop Faraday (CLF) dimension (CD1) corresponding to a length between the first aperture and the first side 104 (eg, along the x-direction).

[0027] During use, the ion beam 114 is scanned between the first side 104 and the second side 110 of the intended beam scan area 106. A first beam current of the ion beam 114 can be measured at the first Faraday cup position 102 and a second beam current of the ion beam 114 can be measured at the second Faraday cup position 110 to determine an optimal scan distance of the ion beam across the intended beam scan area 106 and across the first overscan area 130 and the second overscan area 132 based on the first beam current and the second beam current. Advantageously, by optimizing the horizontal scan distance, the beam current can be increased. More specifically, the embodiments herein minimize the horizontal scan distance as much as possible for a high dose recipe to maximize the beam current. In another example, for a low dose recipe, the horizontal scan distance can be increased to reduce the beam current. In other words, the apparatus 100 allows for rapid tuning of the horizontal scan distance to dial the beam current back to a target value such that the distance is not less than a minimum horizontal scan distance (HSD).

[0028] In one embodiment, the ion beam 114 may be scanned across a wide horizontal distance (eg, from the first overscan region 130 to the second overscan region 132 ), and then the width of the ion beam 114 in the horizontal direction may be slowly reduced toward the center of the intended beam scan area 106 . Figure 2AThe relationship between current and the first Faraday cup multiplier (hereinafter multiplier 1) is shown. As shown by reference line 133, the current is expected to increase linearly with decreasing overscan. In other words, as the ion beam 114 moves away from the first overscan area 130 and toward the expected beam scan area 106, the current increases. Line 135, which tracks the exemplary current measurement values ​​by the Faraday cup 101, shows a situation of insufficient overscan, so that line 135 deviates from reference line 133. To determine the appropriate value of multiplier 1, a current deviation above or below a first predetermined threshold can be used. For example, a scan position before the current drops "x"% from the expected value (reference line 133) can be selected. In various examples, "x" can be between 0.01 and 10. Therefore, as shown by line 138, multiplier 1 in this example can be approximately 1.1.

[0029] like Figure 2B , a similar analysis may be performed for the Faraday profiler 103. Reference line 133 corresponds to a linearly increasing desired current, while line 139 connects various example current measurements of the Faraday profiler 103. To determine an appropriate value for a second Faraday cup multiplier (hereinafter Multiplier 2), a current deviation above or below a second predetermined threshold may be used, in this case, the scan position before the current drops "x"% from the desired value (reference line 133). In various examples, "x" may be between 0.01 and 10. Thus, as shown by line 140, Multiplier 2 may be approximately 0.8 in this example.

[0030] Using the following equation (1), the dynamic horizontal scan distance (ScanWidthTotal) of the ion beam 114 may be determined for the intended beam scan area 106, the first overscan area 130, and the second overscan area 132 of the apparatus 100:

[0031] ScanWidthTotal = multiplier 1 * beam 宽度 +CLF 距离 +Wafer 直径 +Multiplier 2*Bundle 宽度 (1)

[0032] In the above, beam width is a measurable value and varies depending on the parameters of the ion beam 114.

[0033] Figure 3Another way to determine the horizontal scan distance of the apparatus 200 is shown. The apparatus 200 may be the same as or similar to the apparatus 100. Therefore, for the sake of simplicity, only certain aspects of the apparatus 200 will be described below. In this embodiment, a set of stationary point ion beams 214A, 214B are initially positioned in the first overscan area 230 and the second overscan area 232, respectively. The first ion beam 214A can be repeatedly displaced toward the Faraday cup 201 at the first Faraday position 202 via a scanner commanded to a fixed position. The Faraday cup 201 measures the increase in current as the first ion beam 214A moves toward the expected beam scan area 206. Similarly, the second ion beam 214B can be repeatedly displaced toward the Faraday profiler 203 at the second Faraday position 210 via a scanner commanded to a fixed position. The Faraday profiler 203 measures the increase in current as the second ion beam 214B moves toward the expected beam scan area 206. The scan distance may be set based on a point where each beam is outside the intended beam scan area 206, and the Faraday cup 201 and Faraday profiler 203 do not measure any increased beam current relative to no-beam offset. The horizontal scan distance may again be calculated using equation (1) above.

[0034] Figures 4A-4C Still another way to determine the dynamic horizontal scan distance of a "fast spot" beam is shown. Using the "fast spot" beam method, the spot beam 214A can be scanned across the Faraday cup 201 multiple times (e.g., 16 times) to obtain an average current response as a fast spot profile, which may take about 3 seconds. Similarly, the spot beam 214B can be scanned across the Faraday profilometer 203 multiple times (e.g., 16 times) to obtain an average current response as a fast spot profile. In this embodiment, the fast spot ion beam can be scanned around the CLF position (i.e., the aperture) of the Faraday cup 201 to determine a current versus position curve 260, such as Figure 4B The fast point ion beam can be similarly scanned at the Faraday profiler 203 to Figure 4C The current versus position curve 262 shown in FIG. 2 is used to determine the current edge at the edge of the intended beam scan area 206. The fast spot data can then be used to determine the edge of the measured current, where the scan distance is set based on the fast spot current measurement distance.

[0035] Figure 5A top plan view of a beamline ion implanter (shown as ion implanter 300) according to various embodiments of the present disclosure is shown in block form. The ion implanter 300 includes an ion source 302 configured to produce an ion beam 304. The ion beam 304 can be configured as a spot beam that is scanned along a direction, such as an X direction. In the convention used herein, the Z direction refers to the direction of an axis parallel to the central ray trajectory of the ion beam 304. Therefore, as shown in the figure, the absolute direction of the Z direction and the X direction can vary at different points within the ion implanter 300, where the X direction is perpendicular to the Z direction. The ion beam 304 can travel through an analyzer magnet 306, a mass resolving slit 308 and through a collimator 312 before irradiating a substrate 316 disposed on a substrate platform 314. In some embodiments, the substrate platform 314 can be configured to scan the substrate 316 at least along the Y direction. Figure 5 In the example shown in FIG. 3 , the ion implanter 300 includes a beam scanner 310. When the ion beam 304 is set as a spot beam, the beam scanner 310 can scan the ion beam 304 along the X direction to generate a scanned ion beam, which is also scanned at the substrate along the X direction. The width of the resulting scanned spot beam can be comparable to the width W of the substrate 316.

[0036] The ion implanter 300 also includes a set of current detectors 318A-318B (e.g., Faraday cup current detectors, and in particular, closed loop Faraday current detectors) for monitoring the beam current provided to the substrate 316, and a profiler Faraday cup for measuring beam uniformity. The current detectors 318A-318B can be placed along opposite sides of the substrate 316 to stop the ion beam 304, and can be configured to record the beam current of the ion beam 304 during various horizontal scanning beam distance optimization operations as described above.

[0037] The ion implanter 300 also includes a beam calibration assembly 320. The beam calibration assembly 320 may be coupled to the beam scanner 310 and the current detectors 318A, 318B. The beam calibration assembly 320 may be coupled to one or more components to adjust the scanning of the ion beam 304 to provide more uniform and efficient ion implantation into the substrate 316 as a result of the beam distance optimization procedure. The beam calibration assembly 320 may include logic that determines ScanWidthTotal based on the application of various beam measurements and determines the application of routines based on these measurements, as described in the previous examples. The logic may also generate adjustment signals for adjusting the scanning of the ion beam 304 based on the determined ScanWidthTotal. In some cases, the logic of the beam calibration assembly 320 may be implemented in a combination of software and hardware, or firmware. In some examples, beam calibration component 320 may include circuitry (eg, controller 320-A and memory 320-B) coupled to software to execute instructions for adjusting the scan of ion beam 304 based on the determination of ScanWidthTotal. The embodiments are not limited in this context.

[0038] Steering Figure 6 , a method 400 according to an embodiment of the present disclosure will be described. At block 401, the method 400 may include providing a first Faraday cup position along a first side of an expected beam scan area and providing a second Faraday cup position along a second side of the expected beam scan area. In some embodiments, the Faraday cup may be located at the first Faraday cup position and the Faraday profiler may be located at the second Faraday cup position. The first Faraday cup position and the second Faraday cup position may be located along the same horizontal axis at circumferentially opposite points of the expected beam scan area.

[0039] At block 402, the method 400 may further include scanning the ion beam along the first side and the second side of the expected beam scan area. In some embodiments, the ion beam may be scanned completely across the expected beam scan area, the first Faraday cup position, and the second Faraday cup position. In some embodiments, the ion beam may be scanned only at the first Faraday cup position and the second Faraday cup position. That is, the spot beam may stay outside each of the Faraday cup and the Faraday profiler and move inward toward the expected beam scan area, stopping at the edge of the expected beam scan area. This process may be performed using fast spot beam operation.

[0040] At block 403 , method 400 may include measuring a first beam current of the ion beam at a first Faraday cup position and measuring a second beam current of the ion beam at a second Faraday cup position.

[0041] At block 404, method 400 may include determining an optimal scanning distance of the ion beam across the intended beam scanning region based on the first beam current and the second beam current. In some embodiments, determining the optimal scanning distance includes: scanning the ion beam outside a first side of the intended beam scanning region until the ion beam completely passes through a first aperture of a Faraday cup; and scanning the ion beam outside a second side of the intended beam scanning region until the ion beam completely passes through a Faraday profilometer. In some embodiments, the method may further include: determining that the ion beam has completely passed through the first aperture of the Faraday cup when a first current measurement of the Faraday cup reaches a first predetermined threshold, and determining that the ion beam has completely passed through a second aperture of the second Faraday cup when a second current measurement of the second Faraday cup reaches a second predetermined threshold.

[0042] The above discussion is presented for the purpose of illustration and description and is not intended to limit the present disclosure to one or more forms disclosed herein. For example, in order to simplify the present disclosure, various features of the present disclosure may be grouped together in one or more aspects, embodiments, or configurations. However, it should be understood that various features of certain aspects, embodiments, or configurations of the present disclosure may be combined in alternative aspects, embodiments, or configurations. In addition, the above claims are hereby incorporated into this detailed description for reference, with each claim itself serving as a separate embodiment of the present disclosure.

[0043] As used herein, an element or step described in the singular and preceded by the word "a" or "an" should be understood to not exclude multiple elements or steps, unless such exclusion is explicitly described. In addition, reference to "one embodiment" of the present disclosure is not intended to be interpreted as excluding the existence of other embodiments that also include the described features.

[0044] As used herein, "including," "comprising," or "having" and variations thereof are intended to encompass the items listed thereafter and equivalents thereof as well as additional items. Thus, the terms "including" or "having" and variations thereof are open-ended expressions and are used interchangeably herein.

[0045] All directional references (e.g., proximal, distal, upper, lower, upward, downward, left, right, lateral, longitudinal, front, rear, top, bottom, above, below, vertical, horizontal, radial, axial, clockwise, and counterclockwise) are used for identification purposes only to help the reader understand the present disclosure and are not intended to be limiting, especially with respect to the position, orientation, or use of the present disclosure. Unless otherwise indicated, connection references (e.g., attached, coupled, connected, and joined) should be interpreted broadly and may include intermediate members between a set of elements and relative movement between elements. As such, connection references do not necessarily mean that two elements are directly connected and fixed relative to each other.

[0046] Furthermore, identifying reference terms (e.g., primary, secondary, first, second, third, fourth, etc.) are not intended to imply importance or priority, but are used to distinguish one feature from another. The drawings are for illustration purposes only, and the dimensions, positions, order, and relative sizes reflected in the drawings may vary.

[0047] Moreover, the terms "substantial" or "substantially" and the terms "approximate" or "approximately" may be used interchangeably in some embodiments and may be described using any relative measure acceptable to one of ordinary skill in the art. For example, these terms may serve as a comparison to a reference parameter to indicate a deviation from being able to provide a given function. The deviation from the reference parameter may be, for example, within an amount of less than 1%, less than 3%, less than 5%, less than 10%, less than 15%, less than 20%, etc., but is not limiting.

[0048] Since the present disclosure has a broad scope that the art will allow and the specification can be interpreted as such, although certain embodiments of the present disclosure have been described herein, the present disclosure is not limited thereto. Therefore, the above description should not be interpreted as limiting. Those skilled in the art will envision other modifications within the scope and spirit of the appended claims.

Claims

1. A method, characterized in that include: providing a first Faraday cup position along a first side of an intended beam scan area; providing a second Faraday cup position along a second side of the intended beam scan area; scanning the ion beam along the first side and the second side of the intended beam scan area; measuring a first beam current of the ion beam at the first Faraday cup position and measuring a second beam current of the ion beam at the second Faraday cup position; as well as An optimal scanning distance of the ion beam is determined based on the first beam current and the second beam current.

2. The method according to claim 1, characterized in that Wherein scanning the ion beam along the first side and the second side of the expected beam scanning area comprises: scanning the ion beam beyond the first side of the intended beam scan area until the ion beam completely passes through a first aperture of a first Faraday cup at the first Faraday cup position; and The ion beam is scanned beyond the second side of the intended beam scan area until the ion beam completely passes through the second Faraday cup position.

3. The method according to claim 2, characterized in that Also includes: The ion beam is determined to have completely passed through the first aperture of the first Faraday cup when the first beam current of the first Faraday cup reaches a first predetermined threshold, and the ion beam is determined to have completely passed through the second Faraday cup position when the second beam current at the second Faraday cup position reaches a second predetermined threshold.

4. The method according to claim 3, characterized in that Wherein determining the optimal scanning distance of the ion beam further comprises: determining a beam width of the ion beam; multiplying the beam width by a first multiplier to obtain a first product, wherein the first multiplier is determined based on the first predetermined threshold; adding the first product to a length dimension between the first aperture and the first side of the implant region to determine a first overscan value; multiplying the beam width by a second multiplier to obtain a second overscan value, wherein the second multiplier is determined based on the second predetermined threshold; The first overscan value, the second overscan value, and a diameter of the intended beam scan area are added together.

5. The method according to claim 2, characterized in that: Wherein scanning the ion beam along the first side and the second side of the expected beam scanning area comprises: initially positioning the ion beam outside the first Faraday cup in a first overscan region; and The ion beam is moved toward the first side of the intended beam scan area.

6. The method according to claim 5, characterized in that Wherein scanning the ion beam along the first side and the second side of the expected beam scanning area further comprises: initially positioning the ion beam outside the second Faraday cup position in a second overscan region; and The ion beam is moved toward the second side of the intended beam scan area.

7. The method according to claim 1, characterized in that Also includes: A current of the ion beam is modified based on the determined optimal scan distance of the ion beam.

8. A device for optimizing the scanning beam distance of an ion beam, characterized in that The device comprises: a beam scanner operable to scan the point ion beam relative to a desired beam scan area; a Faraday cup along a first side of the intended beam scan area; a Faraday profilometer along a second side of the intended beam scan area, wherein the Faraday cup is operable to measure a first beam current of the point ion beam and the Faraday profilometer is operable to measure a second beam current of the point ion beam; and A beam calibration assembly includes a controller and a memory including a calibration routine that runs on the controller to determine an optimal scanning distance for the ion beam based on the first beam current and the second beam current.

9. The device according to claim 8, characterized in that Wherein the beam scanner is operable to scan the point ion beam along the first side and the second side of the intended beam scanning area.

10. The device according to claim 9, characterized in that wherein the beam scanner operable to scan the point ion beam along the first side and the second side of the intended beam scan area is further operable to: scanning the point ion beam beyond the first side of the intended beam scan area until the point ion beam completely passes through the first aperture of the Faraday cup; and The point ion beam is scanned beyond the second side of the intended beam scan area until the point ion beam completely passes through the Faraday profilometer.

11. The device according to claim 10, characterized in that Wherein the calibration routine can also be run on the controller to: determining that the ion beam has completely passed through the first aperture of the Faraday cup when the first beam current of the Faraday cup reaches a first predetermined threshold; as well as When the second beam current of the Faraday cup reaches a second predetermined threshold, it is determined that the ion beam has completely passed through the Faraday profiler.

12. The device according to claim 11, characterized in that Wherein the calibration routine is also capable of being run on the controller to determine the optimal scanning distance of the ion beam by: determining a beam width of the ion beam; multiplying the beam width by a first multiplier to obtain a first product, wherein the first multiplier is determined based on the first predetermined threshold; adding the first product to a length dimension between the first aperture and the first side of the implant region to determine a first overscan value; multiplying the beam width by a second multiplier to obtain a second overscan value, wherein the second multiplier is determined based on the second predetermined threshold; The first overscan value, the second overscan value, and a diameter of the intended beam scan area are added together.

13. The device according to claim 8, characterized in that Wherein the beam scanner is further operable to: initially positioning the ion beam outside the Faraday cup in a first overscan region; and The ion beam is moved toward the first side of the intended beam scan area.

14. The device according to claim 8, characterized in that Wherein the beam scanner is further operable to: initially positioning the ion beam outside the Faraday profilometer in a second overscan region; and The ion beam is moved toward the second side of the intended beam scan area.

15. A non-transitory computer-readable storage medium, the non-transitory computer-readable storage medium comprising instructions, which, when executed by a computer, are characterized in that: The instructions cause the computer to: scanning the point ion beam relative to a desired beam scan area using a beam scanner; measuring a first beam current of the point ion beam at a first Faraday cup positioned along a first side of the intended beam scanning region, and measuring a second beam current of the point ion beam at a second Faraday cup positioned along a second side of the intended beam scanning region; as well as An optimal scanning distance of the ion beam is determined based on the first beam current and the second beam current.

16. The non-transitory computer-readable storage medium of claim 15, wherein: Wherein the instructions further configure the computer to scan the point ion beam along the first side and the second side of the intended beam scan area.

17. The non-transitory computer-readable storage medium according to claim 15, wherein: wherein the instructions further configure the computer to: scanning the point ion beam beyond the first side of the intended beam scan region until the point ion beam completely passes through the first aperture of the first Faraday cup; and The point ion beam is scanned beyond the second side of the intended beam scan area until the point ion beam completely passes through the second aperture of the second Faraday cup.

18. The non-transitory computer-readable storage medium of claim 17, wherein: wherein the instructions further configure the computer to: determining that the point ion beam has completely passed through the first aperture of the first Faraday cup when the first beam current of the first Faraday cup reaches a first predetermined threshold; and When the second beam current of the second Faraday cup reaches a second predetermined threshold, it is determined that the point ion beam has completely passed through the second aperture of the second Faraday cup.

19. The non-transitory computer-readable storage medium of claim 15, wherein: wherein the instructions further configure the computer to: determining a beam width of the ion beam; multiplying the beam width by a first multiplier to obtain a first product, wherein the first multiplier is determined based on the first predetermined threshold; adding the first product to a length between a first aperture of the first Faraday cup and the first side of the implant region to determine a first overscan value; multiplying the beam width by a second multiplier to obtain a second overscan value, wherein the second multiplier is determined according to the second predetermined threshold; and The first overscan value, the second overscan value, and a diameter of the intended beam scan area are added together.

20. The non-transitory computer-readable storage medium of claim 15, wherein: wherein the instructions further configure the computer to: initially positioning the ion beam outside the first Faraday cup in a first overscan region; measuring the first beam current as the point ion beam moves toward the first side of the intended beam scan region; initially positioning the point ion beam outside the second Faraday cup in a second overscan region; as well as The second beam current is measured as the point ion beam moves toward the second side of the intended beam scan area.

Images