Gallium oxide-based micro-nano structure detector and preparation method and application thereof

Abstract

The invention discloses a gallium oxide-based micro-nano structure detector and a preparation method and application thereof, and relates to the technical field of semiconductor detection, the detector comprises a substrate, an n-type gallium oxide layer, an i-type gallium oxide micro-nano structure, a surface electrode and a metal upper ohmic contact electrode from bottom to top, oxide nano-particles are attached to the i-type gallium oxide micro-nano structure, and a metal lower ohmic contact electrode is arranged in the area, not covering the i-type gallium oxide micro-nano structure, of the n-type gallium oxide layer. According to the regulation and control method for regulating and controlling the gallium oxide surface state through the oxide particles, the response speed of the gallium oxide-based micro-nano structure detector can be increased, and the response rising and falling speed of the detector at the high temperature of 400 DEG C is smaller than 0.1 s.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor detection technology, and in particular to a gallium oxide-based micro-nano structure detector and a preparation method and application thereof. Background Art

[0002] Global warming is an important issue facing the 21st century, and reducing greenhouse gas emissions is one of the top priorities for governments around the world. Large amounts of greenhouse gases, such as carbon monoxide, nitrogen oxides, and carbon dioxide, are produced in industrial processes, which accelerate global warming. Real-time monitoring of carbon monoxide, nitrogen oxide, and carbon dioxide emissions in industrial equipment and optimizing process parameters for combustion, casting, and smelting in industry to reduce carbon monoxide, nitrogen oxide, and carbon dioxide emissions are particularly important for controlling the greenhouse effect. Normally, the operating temperature of industrial boilers and engines can reach 600°C. Traditional metal oxide greenhouse gas integrated detectors have poor gas selectivity under high temperature conditions, causing detector performance degradation.

[0003] Gallium oxide belongs to the fourth generation of ultra-wide bandgap semiconductor materials. It is resistant to high temperature, radiation and corrosion, and is an excellent material for preparing high-sensitivity detectors in harsh environments. Compared with gallium oxide-based thin film detectors, micro-nanostructure detectors have a larger surface area ratio, which can realize high-sensitivity and high-response detectors under high temperature and harsh conditions. However, for gallium oxide micro-nanostructures, due to the absence of oxygen atoms on the surface of the micro-nanostructure during the preparation process, surface potential is formed, resulting in bending of the surface energy band. When the detector is working, the excess electrons generated will migrate to the surface of the micro-nanostructure, causing a photoconductivity effect, which makes it impossible for excess carriers to recombine immediately, resulting in a slow response speed of the detector and an inability to respond quickly to the detection object. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a gallium oxide-based micro-nano structure detector and a preparation method and application thereof. The present invention utilizes a method for regulating the surface state of gallium oxide using oxide particles to improve the response speed of the gallium oxide-based micro-nano structure detector.

[0005] In order to solve the above technical problems, the technical solution of the present invention is:

[0006] One of the purposes of the present invention is to provide a gallium oxide-based micro-nano structure detector.

[0007] The gallium oxide-based micro-nano structure detector of the present invention comprises, from bottom to top, a substrate, an n-type gallium oxide layer, an i-type gallium oxide micro-nano structure, a surface electrode and an upper metal ohmic contact electrode, wherein oxide nanoparticles are attached to the i-type gallium oxide micro-nano structure, and an lower metal ohmic contact electrode is provided in an area of ​​the n-type gallium oxide layer not covered with the i-type gallium oxide micro-nano structure.

[0008] In a preferred embodiment of the present invention:

[0009] The oxide nanoparticles are at least one of aluminum oxide nanoparticles, gallium oxide nanoparticles, and indium oxide nanoparticles; and / or the oxide nanoparticles can regulate the surface state of gallium oxide, reduce the photoconductivity effect, and improve the detector response speed;

[0010] The diameter of the oxide nanoparticles is 2nm-100nm.

[0011] In a preferred embodiment of the present invention:

[0012] The n-type gallium oxide layer is deposited on the surface of the substrate, and / or the thickness of the n-type gallium oxide layer is 100 nm to 10 μm; and / or,

[0013] The i-type gallium oxide micro-nanostructure is deposited on the n-type gallium oxide layer, and / or the thickness of the i-type gallium oxide micro-nanostructure is 50nm-5μm, and / or the diameter of the i-type gallium oxide micro-nanostructure is 10nm-1μm.

[0014] In a preferred embodiment of the present invention:

[0015] The substrate is a silicon substrate; and / or,

[0016] The surface electrode is a graphene surface electrode, preferably a single-layer graphene surface electrode; and / or,

[0017] The ohmic contact electrode on the metal is an alloy layer of at least one of Ti, Al, and Cr and Au. Preferably, the thickness of the metal layer of at least one of Ti, Al, and Cr is 1 nm to 50 nm, and / or the thickness of the Au layer is 50 nm to 500 nm; and / or,

[0018] The metal lower ohmic contact electrode is an alloy layer of at least one of Ti, Al, and Cr and Au. Preferably, the thickness of the metal layer of at least one of Ti, Al, and Cr is 1nm to 50nm, and / or the thickness of the Au layer is 50nm to 500nm.

[0019] A second object of the present invention is to provide a method for preparing a gallium oxide-based micro-nanostructure detector as described in one of the objects of the present invention.

[0020] The method for preparing the gallium oxide-based micro-nano structure detector of the present invention comprises:

[0021] (1) growing the n-type gallium oxide layer on the substrate;

[0022] (2) growing an i-type gallium oxide layer on the n-type gallium oxide layer;

[0023] (3) etching the i-type gallium oxide layer using a mask to obtain the i-type gallium oxide micro-nanostructure;

[0024] (4) growing a nitride film on the i-type gallium oxide micro-nanostructure;

[0025] (5) annealing the nitride film in an oxidizing gas atmosphere to obtain the oxide nanoparticles;

[0026] (6) transferring a surface electrode onto the i-type gallium oxide micro-nanostructure to which the oxide nanoparticles are attached;

[0027] (7) preparing the metal upper ohmic contact electrode on the surface electrode;

[0028] (8) Preparing the metal lower ohmic contact electrode in the area of ​​the n-type gallium oxide layer that is not covered by the i-type gallium oxide micro-nano structure.

[0029] In a preferred embodiment of the present invention:

[0030] In step (1):

[0031] The method for growing the n-type gallium oxide layer is chemical vapor deposition; preferably, the method for growing the n-type gallium oxide layer comprises reacting the gallium oxide powder added with silicon powder at high temperature under the action of a reducing agent to form the n-type gallium oxide layer; more preferably, the weight ratio of the silicon powder, the gallium oxide powder and the reducing agent is 1:(1-10); and / or, the reducing agent is carbon powder and / or gallium powder; and / or, the high temperature reaction temperature is 900°C-1100°C, and / or, the reaction time is 0.5-4 hours;

[0032] The method for growing the n-type gallium oxide layer is to reduce the gallium oxide powder in the crucible to gallium dioxide gas and oxygen at high temperature by a reducing agent, and the gallium dioxide gas and oxygen are oxidized again on the substrate to form a gallium oxide layer film, and silicon powder is added to the crucible during the gallium oxide reduction process to dope the gallium oxide layer with silicon to form the n-type gallium oxide layer; and / or,

[0033] In step (2):

[0034] The method for growing the i-type gallium oxide layer is chemical vapor deposition; preferably, the method for growing the i-type gallium oxide layer comprises reacting the gallium oxide powder to which silicon-free powder is added under the action of a reducing agent at a high temperature to form the i-type gallium oxide layer; more preferably, the weight ratio of the silicon-free powder, the gallium oxide powder and the reducing agent is 1:(1-10); and / or, the reducing agent is carbon powder and / or gallium powder; and / or, the high temperature reaction temperature is 900°C-1100°C, and / or, the reaction time is 0.5-4 hours;

[0035] The growth method of the i-type gallium oxide layer is to reduce the gallium oxide powder in the crucible into gallium dioxide gas and oxygen at high temperature by a reducing agent, and the gallium dioxide gas and oxygen are oxidized again on the n-type gallium oxide layer to form a gallium oxide layer film. No silicon powder is added during the gallium oxide reduction process, so an i-type gallium oxide layer is formed.

[0036] In a preferred embodiment of the present invention:

[0037] In step (3):

[0038] The mask is a patterned mask made by electron beam exposure technology; and / or,

[0039] The etching is an inductively coupled plasma etching technology.

[0040] The electron beam exposure technology and inductively coupled plasma etching technology described in the present invention are mask and etching technologies well known to those skilled in the art.

[0041] In a preferred embodiment of the present invention:

[0042] In step (4):

[0043] The nitride film is grown by a metal organic chemical vapor deposition method and / or a hydride vapor phase epitaxy method; and / or,

[0044] 1nm to 200nm of the nitride film; and / or,

[0045] The metal organic chemical vapor deposition method and hydride vapor phase epitaxy method described in the present invention are thin film growth methods well known to those skilled in the art;

[0046] In step (5):

[0047] The oxidizing gas is oxygen; and / or,

[0048] The annealing temperature is 600° C.-1000° C., and / or the annealing time is 10-60 minutes.

[0049] In a preferred embodiment of the present invention:

[0050] In step (6):

[0051] The transfer method comprises laying a surface electrode on the i-type gallium oxide micro-nanostructure; and / or,

[0052] In step (7):

[0053] The method for preparing the ohmic contact electrode on the metal comprises: photolithography masking, thermal evaporation coating and chemical stripping on the surface electrode to prepare the ohmic contact electrode on the metal; and / or,

[0054] In step (8):

[0055] The method for preparing the ohmic contact electrode under the metal comprises the steps of: photolithography masking the area on the n-type gallium oxide layer not covered with the i-type gallium oxide micro-nano structure, inductively coupled plasma etching followed by thermal evaporation coating, to prepare the ohmic contact electrode under the metal;

[0056] The photolithography mask, thermal evaporation coating and inductively coupled plasma etching described in the present invention are mask, coating and etching methods well known to those skilled in the art.

[0057] A preferred embodiment of the present invention: a gallium oxide-based nanocolumn greenhouse gas integrated detector and a preparation method thereof, wherein the greenhouse gas integrated detector comprises epitaxially growing n-type and i-type gallium oxide layers on a silicon substrate; preparing an i-type gallium oxide layer nanocolumn on the i-type gallium oxide layer; growing an i-type gallium oxide film, an indium nitride film and an aluminum nitride film with low intrinsic carrier concentration in different regions on the i-type gallium oxide nanocolumn respectively; annealing the i-type gallium oxide film, the indium nitride film and the aluminum nitride film with low intrinsic carrier concentration under oxygen conditions to form gallium oxide, indium oxide and aluminum oxide nanoparticle greenhouse gas detection regions respectively; the gallium oxide nanoparticles are carbon monoxide detectors; the indium oxide nanoparticles are nitrogen oxide detectors; the aluminum oxide nanoparticles are carbon dioxide detectors; laying a single-layer graphene surface electrode on the i-type gallium oxide nanocolumn; plating metal on the single-layer graphene surface electrode as an upper ohmic contact electrode; preparing a metal lower ohmic contact electrode in an uncovered region of the n-type gallium oxide layer to complete device preparation. The prepared gallium oxide-based nanocolumn greenhouse gas detector has strong selectivity for carbon monoxide, nitrogen oxide and carbon dioxide under high temperature conditions, excellent comprehensive performance and is easy to prepare.

[0058] Specifically, the following preparation method can be adopted:

[0059] Step 1: growing an n-type gallium nitride layer on a silicon substrate;

[0060] Step 2: growing an i-type gallium nitride layer on the n-type gallium nitride layer prepared in step 1;

[0061] Step 3: Prepare i-type gallium oxide nanorods on the i-type gallium nitride layer prepared in step 2 by using masking, etching, and stripping methods;

[0062] Step 4: growing a low intrinsic carrier concentration i-type gallium oxide film, an indium nitride film and an aluminum nitride film respectively on different regions on the i-type gallium oxide nanorods described in step 3;

[0063] Step 5: annealing the low intrinsic carrier concentration i-type gallium oxide film, indium nitride film and aluminum nitride film in step 4 under oxygen conditions to form a greenhouse gas detection region of gallium oxide, indium oxide and aluminum oxide nanoparticles;

[0064] Step 6: Prepare graphite surface electrodes and metal ohmic contact electrodes on the i-type gallium oxide micro-columns by using transfer, masking, evaporation, and stripping methods;

[0065] Step 7: Prepare a lower ohmic contact electrode on the uncovered n-type gallium oxide region by using a mask, evaporation, and lift-off method.

[0066] The third object of the present invention is to provide a gallium oxide-based micro-nano structure detector as described in one of the objects of the present invention or a gallium oxide-based micro-nano structure detector prepared by the method described in the second object of the present invention for use in detecting greenhouse gases under high temperature conditions.

[0067] The present invention provides a gallium oxide-based micro-nano structure detector, which is epitaxially grown on a silicon substrate with n-type and i-type gallium oxide layers; an i-type gallium oxide layer micro-nano structure is prepared on the i-type gallium oxide layer; a nitride film is grown on the i-type gallium oxide micro-nano structure and annealed under oxygen conditions to form an oxide nanoparticle detection area; a single-layer graphene surface electrode is laid flat on the i-type gallium oxide micro-nano structure; metal is plated on the single-layer graphene surface electrode as an upper ohmic contact electrode; a metal lower ohmic contact electrode is prepared in the uncovered area of ​​the n-type gallium oxide layer to complete the device preparation. The prepared gallium oxide-based micro-nano structure fast response detector can be used for detection under high temperature conditions, has strong selectivity, excellent comprehensive performance, and is easy to prepare. The detector of the present invention has a response rise and fall speed of less than 0.1s at a high temperature of 400 degrees Celsius. BRIEF DESCRIPTION OF THE DRAWINGS

[0068] Figure 1 This is a schematic structural diagram of a gallium oxide-based micro-nano structure detector according to Example 1 of the present invention;

[0069] Wherein: 1-silicon substrate; 2-n-type gallium oxide layer; 3-i-type gallium oxide micro-nanostructure; 4-aluminum oxide nanoparticles; 5-single-layer graphene surface electrode; 6-metal upper ohmic contact electrode; 7-metal lower ohmic contact electrode;

[0070] Figure 2 This is a schematic structural diagram of a gallium oxide-based micro-nano structure detector according to Example 2 of the present invention;

[0071] Wherein: 2.1-silicon substrate; 2.2-n-type gallium oxide layer; 2.3-i-type gallium oxide nanorods; 2.4-gallium oxide nanoparticles; 2.5-indium oxide nanoparticles; 2.6-aluminum oxide nanoparticles; 2.7-single-layer graphene surface electrode; 2.8-metal upper ohmic contact electrode; 2.9-metal lower ohmic contact electrode;

[0072] Figure 3 This is a test result diagram of the photocurrent variation over time at high temperature of the gallium oxide-based micro-nano structure detector of Example 1 of the present invention;

[0073] This test applies solar-blind light to the detector, and the detector electrodes collect photogenerated carriers to generate photocurrent to test the detector's response speed to solar-blind light. The low level in the figure is the dark current when there is no light, and the high level is the photocurrent when light is applied. The rising and falling edges reflect the speed of the detector's response. Figure 3 It can be seen from the test results that the detector of Example 1 of the present invention responds to the rising and falling speeds of less than 0.1s at a high temperature of 400 degrees Celsius. DETAILED DESCRIPTION

[0074] The specific embodiments of the present invention are further described below in conjunction with the accompanying drawings. It should be noted that the description of these embodiments is used to help understand the present invention, but does not constitute a limitation of the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0075] Example 1

[0076] like Figure 1 As shown, a method for preparing a gallium oxide-based micro-nano structure detector includes:

[0077] Step 1: epitaxially grow an n-type gallium oxide layer 2 on a silicon substrate 1 using metal organic chemical vapor deposition technology: the growth method of the n-type gallium oxide layer 2 is to reduce the gallium oxide powder in the crucible to gallium dioxide gas and oxygen at high temperature using a reducing agent carbon powder, and the gallium dioxide gas and oxygen are oxidized again on the substrate to form a gallium oxide layer film. During the gallium oxide reduction process, silicon powder is added to the crucible to dope the gallium oxide layer with silicon to form an n-type gallium oxide layer 2.2. The gallium oxide powder used is 3g, the carbon powder used is 2g, the silicon powder added is 0.5g, and the thickness is 10μm; the high temperature reaction temperature is 1000℃, and the reaction time is 2 hours;

[0078] Step 2: epitaxially grow an i-type gallium oxide layer on the n-type gallium oxide layer 2 prepared in step 1 by using chemical vapor deposition technology: react the gallium oxide powder added with no silicon powder at a high temperature of 1000° C. for 2 hours under the action of reducing agent carbon powder to form an i-type gallium oxide layer; the growth method of the i-type gallium oxide layer is to reduce the gallium oxide powder in the crucible to gallium dioxide gas and oxygen at a high temperature by a reducing agent, and the gallium dioxide gas and oxygen are oxidized again on the n-type gallium oxide layer 2 to form a gallium oxide layer film, and no silicon powder is added during the gallium oxide reduction process, so an i-type gallium oxide layer is formed; the gallium oxide powder used is 2g, the carbon powder used is 1g, and the silicon-free powder used is 0.5g; the thickness is 2μm;

[0079] Step 3: using electron beam exposure technology to prepare a patterned mask for the i-type gallium oxide layer prepared in step 2, and using inductively coupled plasma etching technology to etch the i-type gallium oxide layer, the prepared i-type gallium oxide micro-nanostructure 3 has a diameter of 500 nm;

[0080] Step 4: epitaxially growing an aluminum nitride film with a thickness of 2 nm on the i-type gallium oxide micro-nanostructure 3 prepared in step 3 by using metal organic chemical vapor deposition technology;

[0081] Step 5: annealing the aluminum nitride film prepared in step 4 at 800° C. for 30 minutes in an oxygen atmosphere to form aluminum oxide nanoparticles 4 with a diameter of 5 nm;

[0082] Step 6: Laying a single-layer graphene surface electrode 5 on the i-type gallium oxide micro-nanostructure 3 by a transfer method;

[0083] Step 7: Prepare a titanium-gold upper ohmic contact electrode 6 on the single-layer graphene surface electrode 5 prepared in step 6 by using a photolithography mask, thermal evaporation coating and chemical stripping technology;

[0084] Step 8: Prepare the titanium aluminum gold lower ohmic contact electrode 7 on the n-type gallium oxide region by using photolithography mask, inductively coupled plasma etching technology and thermal evaporation coating technology.

[0085] Example 2

[0086] like Figure 2 As shown, a method for preparing a gallium oxide-based nanocolumn greenhouse gas integrated detector includes:

[0087] Step 1: epitaxially grow an n-type gallium oxide layer 2.2 on a silicon substrate 2.1 using chemical vapor deposition technology. The growth method of the n-type gallium oxide layer 2.2 is to reduce the gallium oxide powder in the crucible to gallium dioxide gas and oxygen at high temperature using a reducing agent carbon powder. The gallium dioxide gas and oxygen are oxidized again on the substrate to form a gallium oxide layer film. During the gallium oxide reduction process, silicon powder is added to the crucible to dope the gallium oxide layer with silicon to form an n-type gallium oxide layer 2.2. The gallium oxide powder used is 3g, the carbon powder used is 2g, the silicon powder added is 0.5g, and the thickness is 10μm; the high temperature reaction temperature is 1000℃, and the reaction time is 3 hours;

[0088] Step 2: epitaxially grow an i-type gallium oxide layer on the n-type gallium oxide layer 2.2 prepared in step 1 by using metal organic chemical vapor deposition technology: react the gallium oxide powder added with silicon-free powder at a high temperature of 1000° C. for 3 hours under the action of reducing agent carbon powder to form an i-type gallium oxide layer; the growth method of the i-type gallium oxide layer is to reduce the gallium oxide powder in the crucible to gallium dioxide gas and oxygen at a high temperature by a reducing agent, and the gallium dioxide gas and oxygen are oxidized again on the n-type gallium oxide layer 2.2 to form a gallium oxide layer film, and no silicon powder is added during the gallium oxide reduction process, so an i-type gallium oxide layer is formed; the gallium oxide powder used is 2g, the carbon powder used is 1g, and the silicon-free powder used is 0.5g; the thickness is 2μm;

[0089] Step 3: The i-type gallium oxide layer prepared in step 2 is subjected to a patterned mask using electron beam exposure technology, and the i-type gallium oxide layer is etched using inductively coupled plasma etching technology to prepare an i-type gallium oxide nanorod 2.3 with a diameter of 500 nm.

[0090] Step 4: using metal organic chemical vapor deposition technology, epitaxially growing i-type gallium oxide thin films, indium nitride thin films and aluminum nitride thin films in different regions of the i-type gallium oxide nanorods 2.3 prepared in step 3, respectively, with a thickness of 2 nm;

[0091] Step 5: annealing the i-type gallium oxide film, indium nitride film and aluminum nitride film prepared in step 4 at 1000° C. for 40 minutes in an oxygen atmosphere to form gallium oxide nanoparticles 2.4, indium oxide nanoparticles 2.5 and aluminum oxide nanoparticles 2.6, each with a diameter of 5 nm;

[0092] Step 6: Laying a single-layer graphene surface electrode 2.7 on the i-type gallium oxide nanorod 2.3 by a transfer method;

[0093] Step 7: Prepare a titanium-gold upper ohmic contact electrode 2.8 on the single-layer graphene surface electrode 2.7 prepared in step 6 by using a photolithography mask, thermal evaporation coating and chemical stripping technology;

[0094] Step 8: Prepare the titanium aluminum gold lower ohmic contact electrode 2.0 on the n-type gallium oxide region by using photolithography mask, inductively coupled plasma etching technology and thermal evaporation coating technology.

[0095] The embodiments of the present invention are described in detail above with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. For those skilled in the art, various changes, modifications, substitutions and variations of these embodiments are made without departing from the principles and spirit of the present invention, and still fall within the scope of protection of the present invention.

Claims

1. A gallium oxide-based micro-nanostructure detector, characterized in that The detector comprises, from bottom to top, a substrate, an n-type gallium oxide layer, an i-type gallium oxide micro-nano structure, a surface electrode and a metal upper ohmic contact electrode, wherein oxide nanoparticles are attached to the i-type gallium oxide micro-nano structure, and a metal lower ohmic contact electrode is arranged in an area of ​​the n-type gallium oxide layer not covered with the i-type gallium oxide micro-nano structure.

2. The detector according to claim 1, characterized in that: The oxide nanoparticles are at least one of aluminum oxide nanoparticles, gallium oxide nanoparticles, and indium oxide nanoparticles; and / or, The diameter of the oxide nanoparticles is 2nm-100nm.

3. The detector according to claim 1, characterized in that: The n-type gallium oxide layer is deposited on the surface of the substrate, and / or the thickness of the n-type gallium oxide layer is 100 nm to 10 μm; and / or, The i-type gallium oxide micro-nanostructure is deposited on the n-type gallium oxide layer, and / or the thickness of the i-type gallium oxide micro-nanostructure is 50nm-5μm, and / or the diameter of the i-type gallium oxide micro-nanostructure is 10nm-1μm.

4. The detector according to claim 1, characterized in that: The substrate is a silicon substrate; and / or, The surface electrode is a graphene surface electrode, preferably a single-layer graphene surface electrode; and / or, The ohmic contact electrode on the metal is an alloy layer of at least one of Ti, Al, and Cr and Au. Preferably, the thickness of the metal layer of at least one of Ti, Al, and Cr is 1 nm to 50 nm, and / or the thickness of the Au layer is 50 nm to 500 nm; and / or, The metal lower ohmic contact electrode is an alloy layer of at least one of Ti, Al, and Cr and Au. Preferably, the thickness of the metal layer of at least one of Ti, Al, and Cr is 1nm to 50nm, and / or the thickness of the Au layer is 50nm to 500nm.

5. A method for preparing a gallium oxide-based micro-nanostructure detector according to any one of claims 1 to 4, characterized in that The method comprises: (1) growing the n-type gallium oxide layer on the substrate; (2) growing an i-type gallium oxide layer on the n-type gallium oxide layer; (3) etching the i-type gallium oxide layer using a mask to obtain the i-type gallium oxide micro-nanostructure; (4) growing a nitride film on the i-type gallium oxide micro-nanostructure; (5) annealing the nitride film in an oxidizing gas atmosphere to obtain the oxide nanoparticles; (6) transferring a surface electrode onto the i-type gallium oxide micro-nanostructure to which the oxide nanoparticles are attached; (7) preparing the metal upper ohmic contact electrode on the surface electrode; (8) Preparing the metal lower ohmic contact electrode in the area of ​​the n-type gallium oxide layer that is not covered by the i-type gallium oxide micro-nano structure.

6. The method according to claim 5, characterized in that: In step (1): The method for growing the n-type gallium oxide layer is chemical vapor deposition; preferably, the method for growing the n-type gallium oxide layer comprises reacting the gallium oxide powder added with silicon powder at high temperature under the action of a reducing agent to form the n-type gallium oxide layer; more preferably, the weight ratio of the silicon powder, the gallium oxide powder and the reducing agent is 1:(1-10); and / or, the reducing agent is carbon powder and / or gallium powder; and / or, the high temperature reaction temperature is 900°C-1100°C, and / or, the reaction time is 0.5-4 hours; and / or, In step (2): The growth method of the i-type gallium oxide layer is a chemical vapor deposition method; preferably, the growth method of the i-type gallium oxide layer includes reacting the gallium oxide powder added with silicon-free powder at a high temperature under the action of a reducing agent to form the i-type gallium oxide layer; more preferably, the weight ratio of the silicon-free powder, the gallium oxide powder and the reducing agent is 1:(1-10); and / or, the reducing agent is carbon powder and / or gallium powder; and / or, the high temperature reaction temperature is 900°C-1100°C, and / or, the reaction time is 0.5-4 hours.

7. The method according to claim 5, characterized in that: In step (3): The mask is a patterned mask made by electron beam exposure technology; and / or, The etching is an inductively coupled plasma etching technology.

8. The method according to claim 5, characterized in that: In step (4): The nitride film is grown by a metal organic chemical vapor deposition method and / or a hydride vapor phase epitaxy method; and / or, 1nm to 200nm of the nitride film; and / or, In step (5): The oxidizing gas is oxygen; and / or, The annealing temperature is 600° C.-1000° C., and / or the annealing time is 10-60 minutes.

9. The method according to claim 5, characterized in that: In step (6): The transfer method comprises laying a surface electrode on the i-type gallium oxide micro-nanostructure; and / or, In step (7): The method for preparing the ohmic contact electrode on the metal comprises: photolithography masking, thermal evaporation coating and chemical stripping on the surface electrode to prepare the ohmic contact electrode on the metal; and / or, In step (8): The method for preparing the ohmic contact electrode under the metal comprises the steps of: photolithography masking the area on the n-type gallium oxide layer not covered with the i-type gallium oxide micro-nano structure, inductively coupled plasma etching followed by thermal evaporation coating to prepare the ohmic contact electrode under the metal.

10. Use of the gallium oxide-based micro-nano structure detector according to any one of claims 1 to 4 or the gallium oxide-based micro-nano structure detector prepared by the method according to any one of claims 5 to 9 in detecting greenhouse gases under high temperature conditions.

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