A highly integrated two-dimensional silicon-based terahertz frequency domain resonator

Abstract

The present invention discloses a two-dimensional silicon-based terahertz frequency domain highly integrated resonator, comprising: a resonant cavity and a wedge-shaped waveguide for coupling electromagnetic waves into the resonant cavity; the resonant cavity is sequentially provided with an inner layer, at least one intermediate layer, and an isolation layer from the inside to the outside; the inner layer, the intermediate layer, and the isolation layer are formed by a first photonic crystal structure or a second photonic crystal structure arranged in a two-dimensional periodic manner; the first photonic crystal structure and the second photonic crystal structure are arranged alternately between the inner layer, the intermediate layer, and the isolation layer. The present invention realizes accurate selective excitation of resonant modes at different positions in a single resonator, and by effectively controlling the excitation position of each resonant mode, not only the working efficiency and stability of the resonator are improved, but also its adaptability in complex environments is enhanced.

Description

Technical Field

[0001] The present invention relates to the technical field of terahertz on-chip passive devices, and in particular to a two-dimensional silicon-based terahertz frequency domain highly integrated resonator. Background Art

[0002] The terahertz (THz) band, defined as the frequency range between 0.1 and 10 THz, has become a key area for the next generation of ultra-high-speed communication technology due to its unique penetration ability and high bandwidth advantages. Especially in wireless communications, the THz band can provide data transmission rates far higher than existing technologies, showing broad application prospects. Given its excellent compatibility, silicon-based materials are particularly important in this field. Silicon-based materials can not only be seamlessly integrated with existing CMOS manufacturing processes, but also significantly improve the integration and functionality of silicon-based systems, providing a solid technical foundation for efficient THz communication systems.

[0003] As one of the core components of silicon-based communication systems, the resonator structure plays an important role in the terahertz frequency band. It can provide optical feedback to achieve multiple functions such as laser oscillation, enhance the intensity of optical signals, and filter and modulate optical signals. The key advantage of the resonator structure lies in its high quality factor (Q value), which can achieve accurate selection of narrowband optical signals, which is crucial to improving the signal-to-noise ratio and spectral efficiency of communication systems. At the same time, the resonator structure can be integrated with other photonic devices (such as waveguides, modulators, etc.) on the same chip, further reducing the size of the device and improving the overall system performance. '

[0004] However, current technology still faces many challenges. Existing resonator structures cannot accurately achieve selective excitation of resonant modes at different locations in a single resonator, which limits the functionality of the resonator and makes it difficult to flexibly adapt to diverse application requirements. More importantly, this structural limitation makes it difficult to effectively reduce the size of the resonator, which in turn hinders the further miniaturization and high-density integration of photonic integrated circuits. This bottleneck significantly restricts the application potential of resonators in complex integrated systems, and a new structural solution is urgently needed to break through these technical limitations. Summary of the invention

[0005] In view of the shortcomings of the prior art, the present invention provides a two-dimensional silicon-based terahertz frequency domain highly integrated resonator, aiming to improve the integration of the resonator, improve the space utilization, and facilitate processing and integration. The specific technical solution is as follows:

[0006] In a first aspect, an embodiment of the present invention provides a two-dimensional silicon-based terahertz frequency domain highly integrated resonator, comprising: a resonant cavity and a wedge-shaped waveguide symmetrically arranged for coupling electromagnetic waves;

[0007] The resonant cavity is provided with an inner layer, at least one intermediate layer, and an isolation layer in sequence from the inside to the outside;

[0008] The inner layer, the middle layer and the isolation layer are formed by the first photonic crystal structure or the second photonic crystal structure arranged in a two-dimensional periodic manner; the first photonic crystal structure and the second photonic crystal structure are alternately arranged among the inner layer, the middle layer and the isolation layer.

[0009] In a second aspect, an embodiment of the present invention provides an optical chip, comprising an optical chip body and the above-mentioned two-dimensional silicon-based terahertz frequency domain highly integrated resonator, wherein the two-dimensional silicon-based terahertz frequency domain highly integrated resonator is arranged on the chip body.

[0010] In a third aspect, an embodiment of the present invention provides a photonic integrated circuit, comprising a photonic integrated circuit body and the above-mentioned optical chip, wherein the optical chip is arranged on the photonic integrated circuit body.

[0011] Compared with the prior art, the present invention has the following beneficial effects:

[0012] The present invention provides a two-dimensional silicon-based terahertz frequency domain highly integrated resonator, which realizes accurate selective excitation of resonant modes at different positions in a single resonator by sequentially arranging an inner layer, at least one intermediate layer, and an isolation layer from the inside to the outside. This design greatly enhances the functionality of the resonator, enabling it to flexibly adapt to diverse application requirements and breaking through the excitation mode limitations existing in traditional resonator structures. By effectively controlling the excitation position of each resonant mode, the present invention not only improves the working efficiency and stability of the resonator, but also enhances its adaptability in complex environments.

[0013] In addition, the structural solution of the present invention effectively solves the problem of size reduction in traditional designs and optimizes the space utilization of the resonator. Through the integrated design, the present invention can achieve higher performance in a smaller size, promoting the development of miniaturization and high-density integration of photonic integrated circuits. This innovative design provides a new idea for integrated photonics technology, greatly improves the application potential of resonators in complex integrated systems, and provides strong support for technological progress in related fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative labor.

[0015] Figure 1A schematic diagram of the structure of a two-dimensional silicon-based terahertz frequency domain highly integrated resonator provided by the present invention;

[0016] Figure 2 A schematic diagram of an output channel of a highly integrated resonator in a two-dimensional silicon-based terahertz frequency domain provided by the present invention;

[0017] Figure 3 A schematic diagram of the structure of an embodiment of the present invention;

[0018] Figure 4 (a) is a schematic diagram of a unit structure of a first photonic crystal provided by the present invention, Figure 4 (b) is a schematic diagram of a unit structure of a second photonic crystal provided by the present invention;

[0019] Figure 5 The isofrequency line profiles of the first photonic crystal and the second photonic crystal provided by the present invention;

[0020] Figure 6 (a) is a simulated supercell structure corresponding to the first type of transverse mode and the second type of transverse mode provided by the present invention, Figure 6 (b) is a Hz (A / m) distribution diagram of the theoretical calculation and numerical simulation results of the electromagnetic wave dispersion curve corresponding to the first type of transverse mode and the second type of transverse mode provided by the present invention;

[0021] Figure 7 (a) is a simulated supercell structure corresponding to the first type of longitudinal mode and the second type of longitudinal mode provided by the present invention, Figure 7 (b) is a Hz (A / m) distribution diagram of the theoretical calculation and numerical simulation results of the electromagnetic wave dispersion curve corresponding to the first type of longitudinal mode and the second type of longitudinal mode provided by the present invention;

[0022] Figure 8 (a) is the Hz (A / m) distribution diagram of the first type of resonance mode provided by the present invention, Figure 8 (b) is a Hz (A / m) distribution diagram of the second type of resonance mode provided by the present invention;

[0023] Fig. 9 (a) is an example diagram of the overall device for exciting the first type of resonance mode provided by the present invention, Fig. 9 (b) is an example diagram of the overall device for exciting the second type of resonance mode provided by the present invention;

[0024] Fig.10 (a) is the S parameter transmission spectrum of the first type of resonance mode provided by the present invention, Fig.10 (b) is the S parameter transmission spectrum of the second type of resonance mode provided by the present invention. DETAILED DESCRIPTION

[0025] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Instead, they are merely examples of devices and methods consistent with some aspects of the present invention as detailed in the appended claims.

[0026] The terms used in the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The singular forms "a", "the" and "the" used in the present invention and the appended claims are also intended to include plural forms unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more associated listed items.

[0027] It should be understood that although the terms first, second, third, etc. may be used in the present invention to describe various information, these information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present invention, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".

[0028] The present invention is described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the features of the following embodiments and implementations can be combined with each other.

[0029] like Figure 1 As shown, an embodiment of the present invention provides a two-dimensional silicon-based terahertz frequency domain resonator with high integration, including: a resonant cavity and a wedge-shaped waveguide for coupling electromagnetic waves into the resonant cavity;

[0030] The resonant cavity is provided with an inner layer 1, at least one intermediate layer {2 1 , …, 2 i}(i is greater than or equal to 1), isolation layer 3;

[0031] The inner layer 1, the middle layer {2 1 , …, 2 i}, the isolation layer 3 is formed by the first photonic crystal structure or the second photonic crystal structure arranged in a two-dimensional periodic manner; the inner layer 1, the intermediate layer {2 1 , …, 2 i}, the first photonic crystal structure and the second photonic crystal structure are alternately arranged between the isolation layers 3.

[0032] Furthermore, the inner layer 1 and the middle layer {2 1 , …, 2 i}, the first photonic crystal structure and the second photonic crystal structure are alternately arranged between the isolation layers 3, including:

[0033] When the inner layer 1 is composed of the first photonic crystal structure arrangement, the first intermediate layer 2 1 The second photonic crystal structure is composed of a second intermediate layer 2 2 It is composed of the first photonic crystal structure arrangement, and so on; when i is an odd number, the i-th intermediate layer 2 i The second photonic crystal structure is arranged, and the isolation layer 3 is arranged. When i is an even number, the i-th intermediate layer 2 i The first photonic crystal structure is arranged and composed, and the isolation layer 3 is arranged and composed of the second photonic crystal structure;

[0034] or,

[0035] When the inner layer 1 is composed of the second photonic crystal structure arrangement, the first intermediate layer 2 1 It is composed of a first photonic crystal structure arrangement, a second intermediate layer 2 2 It is composed of the second photonic crystal structure arrangement, and so on; when i is an odd number, the i-th intermediate layer 2 i The first photonic crystal structure is arranged, and the isolation layer 3 is arranged. When i is an even number, the i-th intermediate layer 2 i The second photonic crystal structure is arranged, and the isolation layer 3 is arranged, and the first photonic crystal structure is arranged.

[0036] Furthermore, when the ends of the wedge-shaped waveguide structure are located at different layers, electromagnetic waves can be coupled to the resonant cavity structure of a specified layer to excite resonant cavity modes located at different layers.

[0037] The highly integrated two-dimensional silicon-based terahertz frequency domain resonator of the present invention can have resonant modes at different positions within a single resonator structure, and can selectively excite these resonant modes. The principle is as follows:

[0038] In the working frequency band, the contours of the isofrequency lines of the first photonic crystal and the second photonic crystal are separated from each other in the x and y directions. On the momentum conservation line, the contours of the isofrequency lines of the two types of photonic crystals will not have intersections with the momentum conservation line at the same time.

[0039] According to the principle of conservation of momentum, the electromagnetic wave modes of the first photonic crystal and the second photonic crystal will not couple with each other, thereby effectively avoiding the coupling problem between different resonance modes.

[0040] The specific mode analysis is as follows:

[0041] The first photonic crystal corresponds to a first type of resonance mode, and the second photonic crystal corresponds to a second type of resonance mode.

[0042] Both resonance modes can be simplified as a combination of a transverse mode and a longitudinal mode. The transverse mode refers to a mode in which the transmission direction is along the x direction, and the longitudinal mode refers to a mode in which the transmission direction is along the y direction. The electromagnetic wave energy of the transverse mode and the longitudinal mode is distributed in the corresponding channels, and the energy will not leak into adjacent channels.

[0043] Therefore, the first type of resonance mode can be decoupled into a first type of transverse mode and a first type of longitudinal mode, and the second type of resonance mode can be decoupled into a second type of transverse mode and a second type of longitudinal mode.

[0044] like Figure 2 As shown, when the inner layer 1 is composed of the first photonic crystal structure arrangement, electromagnetic waves of the first type of transverse mode and the first type of longitudinal mode are transmitted at its operating frequency, and the structure of the adjacent layer can isolate the transmission of electromagnetic waves of the first type of transverse mode and the first type of longitudinal mode, so that the electromagnetic waves are localized in the inner layer resonant cavity structure, thereby forming a first type of resonant mode, and output through the first channel.

[0045] When i is an odd number, the i-th intermediate layer 2 i It is composed of a second photonic crystal structure, which transmits electromagnetic waves of the second transverse mode and the second longitudinal mode at its operating frequency. The structure of the adjacent layer can isolate the transmission of electromagnetic waves of the second mode, so that the electromagnetic waves are localized in the resonant cavity structure of this layer, forming a second resonant mode. i Channel output; when i is an even number, the i-th intermediate layer 2 i It is composed of a first photonic crystal structure arrangement, which transmits electromagnetic waves of the first transverse mode and the first longitudinal mode at its operating frequency. The structure of the adjacent layer can isolate the transmission of electromagnetic waves of the first mode, so that the electromagnetic waves are localized in the resonant cavity structure of this layer, forming the first resonant mode. i Channel output.

[0046] In order to further verify the electromagnetic wave transmission characteristics of the first and second resonance modes, the electromagnetic wave dispersion curves were derived using the wave vector equation, and the intensity distribution of the electromagnetic waves was plotted using simulation software.

[0047] Taking the first transverse mode and the second transverse mode with the transmission direction along the x direction as an example, the formula derivation process of deriving the electromagnetic wave dispersion curve using the wave vector equation is given:

[0048] First, the contour of the equifrequency line is expressed using the relationship between the wave vector and the refractive index, and the wave vector equation of the first photonic crystal is derived:

[0049]

[0050] In the formula, k 0 is the electromagnetic wave vector, k x is the component of the electromagnetic wave vector along the x direction, k y is the component of the electromagnetic wave vector along the y direction, n 1 is the relative refractive index of the first photonic crystal, A x1 is the displacement component of the isofrequency contour along the x direction relative to the center of the first Brillouin zone.

[0051] For the second photonic crystal, the wave vector equation can also be derived:

[0052]

[0053] In the formula, k 0 is the electromagnetic wave vector, k x is the component of the electromagnetic wave vector along the x direction, k y is the component of the electromagnetic wave vector along the y direction, n 2 is the relative refractive index of the second photonic crystal, A x2 is the displacement component of the isofrequency contour along the x direction relative to the center of the first Brillouin zone, A y is the displacement component of the isofrequency contour along the y direction relative to the center of the first Brillouin zone.

[0054] Secondly, according to equations (1) and (2), the component k of the electromagnetic wave vector along the y direction in the first photonic crystal is y1 for:

[0055]

[0056] The component k of the electromagnetic wave vector along the y direction in the second photonic crystal y2 for:

[0057]

[0058] Furthermore, the electromagnetic wave transmission in the first photonic crystal and the electromagnetic wave attenuation in the second photonic crystal are analyzed:

[0059] For the first photonic crystal, the electromagnetic wave is transmitted in the form of sinusoidal oscillation, so the electromagnetic wave energy E 1 It can be expressed as:

[0060]

[0061] For the second photonic crystal, the electromagnetic wave attenuates in it, which is reflected in the form of exponential decrease. Then the electromagnetic wave energy E 2 It can be expressed as:

[0062]

[0063] In the formula, i is an imaginary number;

[0064] Finally, according to the theory of continuity of electromagnetic wave energy at the junction, the electromagnetic wave energy at the junction is the same, and the component k of the electromagnetic wave vector along the y direction in the first photonic crystal and the second photonic crystal is derived. y1 and k y2 Relationship:

[0065]

[0066] Where d is the width of the current layer structure;

[0067] Due to the different symmetries of odd and even modes of the electromagnetic field, there are two different representations.

[0068] Through the above derivation, the electromagnetic wave dispersion curves of the first transverse mode and the second transverse mode can be derived.

[0069] To derive the electromagnetic wave dispersion curves of the first longitudinal mode and the second longitudinal mode, solve k in formulas (3)-(7) y The position is replaced by solving k x , solve for k x The position is replaced by solving k y That's it.

[0070] Example 1

[0071] Next, if Figure 3 As shown, this example provides a specific implementation process of a two-dimensional silicon-based terahertz frequency domain highly integrated resonator.

[0072] This embodiment is implemented on a silicon-based structure with a thickness of 170 μm. It includes: a resonant cavity and a first wedge-shaped waveguide and a second wedge-shaped waveguide that are symmetrically arranged; the resonant cavity is sequentially provided with an inner resonant cavity structure, an intermediate resonant cavity structure, and an outermost isolation structure from the inside to the outside. The first wedge-shaped waveguide is used to couple electromagnetic waves into the resonant cavity, and the second wedge-shaped waveguide is used to couple electromagnetic waves out, which is convenient for experimental measurement.

[0073] The inner resonant cavity structure is composed of a first photonic crystal, such as Figure 4 As shown in (a), the unit shape of the first photonic crystal is rectangular, with a length of 360 μm and a width of 210 μm, and each unit contains a rectangular hole. The number of transverse units is 10 and the number of longitudinal units is 5.

[0074] An intermediate layer resonant cavity structure is composed of a second photonic crystal, such as Figure 4As shown in (b), the unit shape of the second photonic crystal is a rhombus with a side length of 210 μm, and each unit contains two equilateral triangular holes with a side length of 166 μm. The number of transverse units is 20, and the number of longitudinal units is 22.

[0075] The outermost isolation structure is composed of a first photonic crystal.

[0076] In this embodiment, within the working frequency range (0.382THz-0.397THz), the contours of the isofrequency lines of the first photonic crystal and the second photonic crystal are separated from each other along the direction of electromagnetic wave transmission. The contours of the isofrequency lines at 0.39THz are as follows: Figure 5 According to the principle of conservation of momentum, the modes in the two structures will not couple with each other.

[0077] In this embodiment, there are a first type of resonance mode and a second type of resonance mode. Meanwhile, the first type of resonance mode can be simplified as a combination of a first type of transverse mode and a first type of longitudinal mode, and the second type of resonance mode can be simplified as a combination of a second type of transverse mode and a second type of longitudinal mode.

[0078] Taking the first transverse mode and the second transverse mode as examples, the theoretical calculation and numerical simulation results of the electromagnetic wave dispersion curves of these two modes are given, such as Figure 6 The calculated and simulated supercell structure is shown in Figure 6 As shown in (a) in the figure, the theoretical calculation and numerical simulation results of the electromagnetic wave dispersion curves of the first and second transverse modes are as follows Figure 6 As shown in (b) in the figure, the energy distribution of the electromagnetic wave mode is also given in the illustration, and it can be found that the electromagnetic wave energy is localized in the corresponding channel and will not leak to the adjacent channel.

[0079] In addition, numerical simulations are performed on the dispersion curves of electromagnetic waves in the first and second longitudinal modes. The simulated supercell structures are shown in Figure 7 Furthermore, the numerical simulation results of the electromagnetic wave dispersion curves of the first longitudinal mode and the second longitudinal mode are shown in Figure 7 As shown in (b) in the figure, the energy distribution of the electromagnetic wave mode is also given in the illustration, and it can be found that the electromagnetic wave energy is localized in the corresponding channel and will not leak to the adjacent channel.

[0080] In this embodiment, there is a type of resonance mode at 0.388 THz, and the field distribution is as follows: Figure 8 As shown in (a), the field distribution is concentrated in the inner resonant cavity structure; there are two types of resonant modes at 0.383 THz, and the field distribution is as follows Figure 8 As shown in (b), the field distribution is concentrated in the middle layer resonant cavity structure.

[0081] In this embodiment, the wedge-shaped waveguide structure is used to couple electromagnetic waves into a specified resonant cavity structure to excite a type I resonant mode and a type II resonant mode, respectively, such as Fig. 9 As shown, the extension length of the coupling structure is used to control the excitation of different resonant modes.

[0082] like Fig.10 As shown in (a) of Figure 1, observing the S21 transmission spectrum, it is found that there is a transmission peak at 0.388 THz, indicating that a type of resonant mode has been excited; Fig.10 As shown in (b), by observing the S21 transmission spectrum, it is found that there is a transmission peak at 0.383 THz, indicating that the second type of resonance mode is excited.

[0083] Furthermore, the present invention also provides an optical chip based on the above-mentioned highly integrated resonant cavity, comprising an optical chip body and the above-mentioned highly integrated resonant cavity. The highly integrated resonator is arranged on the chip body. The optical chip can accurately and selectively excite the resonant modes at different positions in a single resonator, thereby improving the frequency selectivity and design functionality of the optical chip.

[0084] Furthermore, the present invention also provides a photonic integrated circuit based on the above-mentioned optical chip, comprising a photonic integrated circuit body and the above-mentioned optical chip, wherein the optical chip is arranged on the photonic integrated circuit body.

[0085] It should be noted that, in this example, by adjusting the structures and lattice constants of the first photonic crystal and the second photonic crystal, the operating frequency of the photonic integrated circuit can be flexibly adjusted to the infrared band or the visible light band.

[0086] In summary, the present invention provides a two-dimensional silicon-based terahertz frequency domain resonator with high integration, which realizes accurate selective excitation of resonant modes at different positions in a single resonator by sequentially arranging an inner layer, at least one intermediate layer, and an isolation layer from the inside to the outside. This design greatly enhances the functionality of the resonator, enabling it to flexibly adapt to diverse application requirements and breaking through the excitation mode limitations existing in traditional resonator structures. By effectively controlling the excitation position of each resonant mode, the present invention not only improves the working efficiency and stability of the resonator, but also enhances its adaptability in complex environments.

[0087] In addition, the structural solution of the present invention effectively solves the problem of size reduction in traditional designs and optimizes the space utilization of the resonator. Through the integrated design, the present invention can achieve higher performance in a smaller size, promoting the development of miniaturization and high-density integration of photonic integrated circuits. This innovative design provides a new idea for integrated photonics technology, greatly improves the application potential of resonators in complex integrated systems, and provides strong support for technological progress in related fields.

[0088] In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by this application.

Claims

1. A two-dimensional silicon-based terahertz frequency domain highly integrated resonator, characterized in that: include: A resonant cavity and a wedge-shaped waveguide for coupling an electromagnetic wave into the resonant cavity; The resonant cavity is provided with an inner layer (1), at least one intermediate layer (21, ..., 2 i ), isolation layer (3); The inner layer (1), the middle layer (21, ..., 2 i ), the isolation layer (3) is formed by a first photonic crystal structure or a second photonic crystal structure arranged in a two-dimensional periodic manner; the inner layer (1), the intermediate layer (21, ..., 2 i ), the first photonic crystal structure and the second photonic crystal structure are alternately arranged between the isolation layers (3).

2. A two-dimensional silicon-based terahertz frequency domain highly integrated resonator according to claim 1, characterized in that: The inner layer (1), the middle layer (21, ..., 2 i ), the first photonic crystal structure and the second photonic crystal structure are alternately arranged between the isolation layers (3) and include: When the inner layer (1) is composed of a first photonic crystal structure arrangement, the first intermediate layer (21) is composed of a second photonic crystal structure arrangement; when i is an odd number, the i-th intermediate layer (2 i ) is composed of a second photonic crystal structure arrangement, and the isolation layer (3) is composed of a first photonic crystal structure arrangement; when i is an even number, the i-th intermediate layer (2 i ) is composed of a first photonic crystal structure arrangement, and the isolation layer (3) is composed of a second photonic crystal structure arrangement; or, When the inner layer (1) is composed of the second photonic crystal structure arrangement, the first intermediate layer (21) is composed of the first photonic crystal structure arrangement; when i is an odd number, the i-th intermediate layer (2 i ) is composed of a first photonic crystal structure arrangement, and the isolation layer (3) is composed of a second photonic crystal structure arrangement; when i is an even number, the i-th intermediate layer (2 i ) is composed of a second photonic crystal structure arrangement, and the isolation layer (3) is composed of a first photonic crystal structure arrangement.

3. A two-dimensional silicon-based terahertz frequency domain highly integrated resonator according to claim 1 or 2, characterized in that: The unit shape of the first photonic crystal structure is a rectangle, and the unit shape of the second photonic crystal structure is a rhombus.

4. A two-dimensional silicon-based terahertz frequency domain highly integrated resonator according to claim 1 or 2, characterized in that: The first photonic crystal structure forms a first type of resonance mode, and the second photonic crystal structure forms a second type of resonance mode.

5. The two-dimensional silicon-based terahertz frequency domain highly integrated resonator according to claim 1, characterized in that: When the end of the wedge-shaped waveguide is located at the target layer, the electromagnetic wave is coupled to the resonant cavity structure of the target layer to excite the resonant cavity mode corresponding to the target layer; the target layer is the inner layer (1), the middle layer (21, ..., 2 i ) or one of the isolation layers (3).

6. A two-dimensional silicon-based terahertz frequency domain highly integrated resonator according to claim 1, characterized in that: In the working frequency band, the contours of the isofrequency lines of the first photonic crystal and the second photonic crystal are separated from each other in both the x and y directions; On the momentum conservation line, the contours of the isofrequency lines of the first photonic crystal and the second photonic crystal will not have intersections with the momentum conservation line at the same time; According to the principle of conservation of momentum, the electromagnetic wave modes in the first photonic crystal and the second photonic crystal will not couple with each other, thereby avoiding the coupling problem between different resonance modes.

7. A two-dimensional silicon-based terahertz frequency domain highly integrated resonator according to claim 4, characterized in that: The first type of resonance mode is decoupled into a first type of transverse mode and a first type of longitudinal mode, and the second type of resonance mode is decoupled into a second type of transverse mode and a second type of longitudinal mode.

8. A two-dimensional silicon-based terahertz frequency domain highly integrated resonator according to claim 7, characterized in that: The expressions of the electromagnetic wave dispersion curves of the first and second resonance modes are as follows: Based on the wave vector equation relationship, the electromagnetic wave dispersion curves corresponding to the first transverse mode and the second transverse mode along the x-direction are calculated; The contour of the equifrequency line is expressed using the relationship between the wave vector and the refractive index, and the wave vector equation of the first photonic crystal is derived: Where k0 is the electromagnetic wave vector, k x is the component of the electromagnetic wave vector along the x direction, k y is the component of the electromagnetic wave vector along the y direction, n1 is the relative refractive index of the first photonic crystal, A x1 is the displacement component of the isofrequency contour along the x direction relative to the center of the first Brillouin zone; For the second photonic crystal, the wave vector equation is derived: Where k0 is the electromagnetic wave vector, k x is the component of the electromagnetic wave vector along the x direction, k y is the component of the electromagnetic wave vector along the y direction, n2 is the relative refractive index of the second photonic crystal, A x2 is the displacement component of the isofrequency contour along the x direction relative to the center of the first Brillouin zone, A y is the displacement component of the isofrequency contour along the y direction relative to the center of the first Brillouin zone; The component k of the electromagnetic wave vector along the y direction in the first photonic crystal y1 for: The component k of the electromagnetic wave vector along the y direction in the second photonic crystal y2 for: For the first photonic crystal, the electromagnetic wave is transmitted in the form of sinusoidal oscillation, and the electromagnetic wave energy E1 is expressed as: For the second photonic crystal, the electromagnetic wave attenuates in it, which is reflected in the form of exponential decline, and the electromagnetic wave energy E2 is expressed as: In the formula, i is an imaginary number; According to the theory of continuity of electromagnetic wave energy at the junction, the electromagnetic wave energy at the junction is the same, and the component k of the electromagnetic wave vector along the y direction in the first photonic crystal and the second photonic crystal is derived. y1 and k y2 Relationship: Where d is the width of the current layer structure; When the electromagnetic wave dispersion curves for the first and second longitudinal modes are to be derived, all the formulas for solving k y The position is replaced by solving k x , solve for k x The position is replaced by solving k y That's it.

9. An optical chip, characterized in that: It comprises an optical chip body and a two-dimensional silicon-based terahertz frequency domain highly integrated resonator as claimed in any one of claims 1 to 8, wherein the two-dimensional silicon-based terahertz frequency domain highly integrated resonator is arranged on the chip body.

10. A photonic integrated circuit, characterized in that: The invention comprises a photonic integrated circuit body and the optical chip as claimed in claim 9, wherein the optical chip is arranged on the photonic integrated circuit body.

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