Design method of driving voltage parameters of Si / SiC hybrid devices considering current stress and device loss and computer medium

Abstract

The present invention discloses a method for designing driving voltage parameters of a Si / SiC hybrid device taking into account current stress and device loss, comprising: determining that SiC MOSFET and Si IGBT are in a co-on and co-off mode; obtaining maximum tolerable pulse current values ​​of SiC MOSFET and Si IGBT; performing simulation to obtain first data and second data; respectively eliminating data with current peak values ​​exceeding the limit in the first data and the second data according to the maximum tolerable pulse current values ​​of SiC MOSFET and Si IGBT, so as to obtain the optional ranges of driving positive voltage and driving negative voltage of SiC MOSFET and Si IGBT; and respectively selecting the value with the minimum loss of the hybrid device as the driving positive voltage and driving negative voltage of SiC MOSFET and Si IGBT according to the optional ranges of driving positive voltage and driving negative voltage of SiC MOSFET and Si IGBT.

Description

Technical Field

[0001] The present invention relates to the field of power electronic device parameter design, and in particular to a Si / SiC hybrid device driving voltage parameter design method and a computer medium that comprehensively considers current stress and device loss. Background Art

[0002] Si / SiC hybrid devices are composed of SiC MOSFET and Si IGBT in parallel. Si / SiC hybrid devices not only have the characteristics of large current capacity of Si-based devices, but also have the advantages of low on-resistance and high switching speed of SiC-based devices. In addition, their power level coverage is wide, which can meet the capacity requirements in different application scenarios. Considering the cost-effectiveness of the device, hybrid devices generally use Si IGBT with a larger current level and SiC MOSFET with a smaller current level. When Si / SiC hybrid devices work under large load conditions and use the switching timing of SiC MOSFET and Si IGBT to turn on and off at the same time, it may cause the current peak value flowing through SiC MOSFET during the turn-on process to exceed the maximum pulse current value it can withstand, and the current peak value flowing through Si IGBT during the turn-off process to exceed the maximum pulse current value it can withstand, thereby threatening the reliable operation of the converter.

[0003] Existing research shows that the positive driving voltage of MOSFET and IGBT in hybrid devices can affect their turn-on current, voltage trajectory and on-resistance. At the same time, since the switching speed of MOSFET is greater than that of IGBT, the turn-on current peak of SiC MOSFET, turn-on loss of hybrid devices and conduction loss are closely related to the positive driving voltage of MOSFET and IGBT (turn-on refers to the instantaneous state of turn-on, and conduction refers to the state of stable operation of the device after turn-on is completed); similarly, adjusting the negative driving voltage of MOSFET and IGBT can change the turn-off process of the hybrid device, thereby affecting the turn-off current peak of Si IGBT and the turn-off loss of the hybrid device. By adjusting the driving voltage of MOSFET and IGBT, the current peak of the device switching process can be effectively reduced, but it will also cause an increase in the overall loss of the hybrid device.

[0004] Therefore, a new technical solution is urgently needed to solve the technical problem of how to design the driving voltage parameters of Si / SiC hybrid devices that comprehensively consider current stress and device loss. Summary of the invention

[0005] The present invention provides a method and computer medium for designing driving voltage parameters of a Si / SiC hybrid device taking current stress and device loss into consideration, so as to solve the technical problem of how to design driving voltage parameters of a Si / SiC hybrid device taking current stress and device loss into consideration.

[0006] To achieve the above object, the present invention provides a method for designing driving voltage parameters of a Si / SiC hybrid device taking into account current stress and device loss, comprising:

[0007] The switching mode of the hybrid device is determined to be the simultaneous on and off mode of SiC MOSFET and Si IGBT.

[0008] The maximum tolerable pulse current values ​​of SiC MOSFET and Si IGBT are obtained; and the first data and the second data are obtained.

[0009] The first data includes the turn-on current peak value of the SiC MOSFET and the turn-on loss and conduction loss of the hybrid device when the SiC MOSFET and the Si IGBT are arbitrarily combined with preset step scale values ​​within their respective driving positive voltage ranges.

[0010] The second data includes the Si IGBT turn-off current peak value and the turn-off loss of the hybrid device when the SiC MOSFET and the Si IGBT are arbitrarily combined with the preset step scale selection value within the respective driving negative voltage range.

[0011] According to the maximum tolerable pulse current values ​​of SiC MOSFET and Si IGBT, the data with current peak exceeding the limit in the first data and the second data are eliminated respectively, so as to obtain the optional ranges of driving positive voltage and driving negative voltage of SiC MOSFET and Si IGBT.

[0012] According to the optional ranges of the driving positive voltage and the driving negative voltage of the SiC MOSFET and the Si IGBT, the values ​​with the smallest loss are selected as the driving positive voltage and the driving negative voltage of the SiC MOSFET and the Si IGBT, respectively.

[0013] Preferably, removing data with current peak exceeding the limit in the first data and the second data according to the maximum tolerable pulse current values ​​of SiC MOSFET and Si IGBT respectively comprises:

[0014] All data in the first data in which the peak value of the SiC MOSFET turn-on current is greater than or equal to the maximum pulse current value that the SiC MOSFET can withstand are eliminated, and the driving positive voltage range of the SiC MOSFET in the remaining data is used as the optional driving positive voltage range of the SiC MOSFET; the driving positive voltage range of the Si IGBT in the remaining data is used as the optional driving positive voltage range of the Si IGBT.

[0015] Preferably, eliminating data with current peak values ​​exceeding the limit in the first data and the second data according to the maximum tolerable pulse current values ​​of SiC MOSFET and Si IGBT respectively further includes:

[0016] All data in the second data in which the Si IGBT turn-off current peak is greater than or equal to the Si IGBT's maximum tolerable pulse current value are eliminated, and the driving negative voltage range of the SiC MOSFET in the remaining data is used as the optional driving negative voltage range of the SiC MOSFET; the driving negative voltage range of the Si IGBT in the remaining data is used as the optional driving negative voltage range of the Si IGBT.

[0017] Preferably, obtaining the first data includes:

[0018] The first experimental data are obtained by selecting values ​​from the driving positive voltage range of SiC MOSFET and Si IGBT in a preset step scale and performing any two-by-two combinations until the entire driving positive voltage range of SiC MOSFET and Si IGBT is covered.

[0019] A simulation is performed according to the first experimental data to obtain the SiC MOSFET turn-on current peak value and the turn-on loss and conduction loss of the hybrid device in the first experimental data, that is, to obtain the first data.

[0020] Preferably, performing simulation according to the first experimental data includes:

[0021] When simulating according to the first experimental data, the hybrid device is operated in a preset load current range; the preset load current range includes the maximum load current of the hybrid device.

[0022] Preferably, obtaining the second data includes:

[0023] The second experimental data are obtained by selecting values ​​from the driving negative voltage range of SiC MOSFET and Si IGBT in a preset step scale and performing any two-by-two combinations until the entire driving negative voltage range of SiC MOSFET and Si IGBT is covered.

[0024] The simulation is performed according to the second experimental data to obtain the Si IGBT turn-off current peak value and the turn-off loss of the hybrid device in the second experimental data, that is, to obtain the second data.

[0025] Preferably, performing simulation according to the second experimental data includes:

[0026] When performing simulation according to the second experimental data, the hybrid device is operated in a preset load current range; the preset load current range includes the maximum load current of the hybrid device.

[0027] Preferably, it also includes:

[0028] According to the models of SiC MOSFET and Si IGBT, the driving positive voltage range and driving negative voltage range of SiC MOSFET and Si IGBT are obtained by comprehensively considering the device data sheet, the requirements of SiC MOSFET and SiIGBT being fully turned on and avoiding oscillation.

[0029] Preferably, obtaining the maximum tolerable pulse current value of SiC MOSFET and Si IGBT includes:

[0030] Get the maximum pulse current that SiC MOSFET can withstand, including: in, I SOA_MOS Indicates the maximum pulse current value that SiC MOSFET can withstand; P tot_MOS Represents the maximum power dissipation of SiC MOSFET; T j_max_MOS and T C_MOS They represent the maximum allowable junction temperature and the maximum allowable case temperature of SiCMOSFET during the switching process respectively; V ds represents the drain-source voltage of SiC MOSFET; Z th(JC)(tp)_MOS The pulse is t p The equivalent thermal resistance between the heat source inside the SiC MOSFET chip and the outer shell;

[0031] Get the maximum pulse current that Si IGBT can withstand, including: in, I SOA_IGBT Indicates the maximum tolerable pulse current value of Si IGBT; P tot_IGBT Indicates the maximum power dissipation of Si IGBT; T j_max_IGBT and T C_IGBT They represent the maximum allowable junction temperature and the maximum allowable case temperature of Si IGBT during the switching process respectively; V ce Represents the collector-emitter voltage of Si IGBT; Z th(JC)(tp)_IGBT The pulse is t p The equivalent thermal resistance between the heat source inside the Si IGBT chip and the outer shell;

[0032] The present invention also provides a computer medium, comprising a processor, a memory and a computer program for implementing the method of the present invention.

[0033] The present invention has the following beneficial effects:

[0034] The Si / SiC hybrid device driving voltage parameter design method of the present invention comprehensively considers current stress and device loss, obtains the SiC MOSFET turn-on current peak value and the turn-on loss and conduction loss of the hybrid device when SiC MOSFET and Si IGBT are arbitrarily combined with preset step scale values ​​within their respective driving positive voltage ranges; and also obtains the SiIGBT turn-off current peak value and the turn-off loss of the hybrid device when SiC MOSFET and Si IGBT are arbitrarily combined with preset step scale values ​​within their respective driving negative voltage ranges; and provides a data basis for the subsequent division of the optional range of driving voltages of SiC MOSFET and Si IGBT and the selection of driving voltages.

[0035] The driving positive voltage ranges of SiC MOSFET and Si IGBT are divided by the maximum tolerable pulse current value of SiC MOSFET, and the driving negative voltage ranges of SiC MOSFET and Si IGBT are divided by the maximum tolerable pulse current value of Si IGBT, so that the method of the present invention fully considers the current stress, and selecting the driving voltage by the method of the present invention can avoid device overcurrent.

[0036] By selecting the driving voltage with the lowest loss within the divided driving positive voltage range and driving negative voltage range, the method of the present invention fully considers the device loss. By selecting the driving voltage within the divided driving voltage range, the device loss can be reduced as much as possible.

[0037] In summary, the method of the present invention can design the driving voltage parameters of the Si / SiC hybrid device by comprehensively considering the current stress and device loss, and has good practicality.

[0038] In addition to the above-described purposes, features and advantages, the present invention has other purposes, features and advantages. The present invention will be further described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The accompanying drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the accompanying drawings:

[0040] Figure 1 It is a flow chart of a preferred embodiment of the present invention.

[0041] Figure 2 1 is the first experimental data of the preferred embodiment of the present invention and the corresponding SiC MOSFET turn-on current peak diagram.

[0042] Figure 3 It is the first experimental data of the preferred embodiment of the present invention and the corresponding schematic diagram of the turn-on loss of the hybrid device.

[0043] Figure 4 It is the first experimental data of the preferred embodiment of the present invention and the corresponding schematic diagram of the conduction loss of the hybrid device.

[0044] Figure 5 1 is a schematic diagram of the second experimental data of the preferred embodiment of the present invention and the corresponding Si IGBT turn-off current peak value.

[0045] Figure 6 It is the second experimental data of the preferred embodiment of the present invention and the corresponding schematic diagram of the turn-off loss of the hybrid device.

[0046] Figure 7 Schematic diagram of two modes of the verification part of the preferred embodiment of the present invention.

[0047] Figure 8 It is a schematic diagram comparing the comprehensive performance of Si / SiC hybrid devices in two modes in a preferred embodiment of the present invention. DETAILED DESCRIPTION

[0048] The embodiments of the present invention are described in detail below with reference to the accompanying drawings, but the present invention can be implemented in many different ways as defined and covered by the claims.

[0049] See also Figure 1 In a preferred embodiment of the present invention, a method for designing driving voltage parameters of a Si / SiC hybrid device taking into account current stress and device loss is provided, comprising:

[0050] S1. Determine the switching mode of the hybrid device as the simultaneous on and off mode of SiC MOSFET and Si IGBT.

[0051] S2. Obtain the maximum tolerable pulse current value of SiC MOSFET and Si IGBT; obtain the first data and the second data.

[0052] In a preferred embodiment of the present invention, according to the models of SiC MOSFET and Si IGBT, the driving positive voltage range and the driving negative voltage range of SiC MOSFET and Si IGBT are first obtained by comprehensively considering the device data sheet, the requirements of fully turning on SiC MOSFET and Si IGBT and avoiding oscillation.

[0053] In the preferred embodiment of the present invention, a hybrid device composed of SiC MOSFET (C3M0075120D) and Si IGBT (IKW25T120) is taken as an example, and the positive driving voltage range of the two is 12V~22V. Among them, the negative driving voltage range of SiC MOSFET is -2V~-10V, and the negative driving voltage range of Si IGBT is -1V~-15V.

[0054] In a preferred embodiment of the present invention, obtaining the maximum tolerable pulse current value of the SiC MOSFET includes:

[0055] in, I SOA_MOS Indicates the maximum pulse current value that SiC MOSFET can withstand; P tot_MOS Represents the maximum power dissipation of SiC MOSFET; T j_max_MOS and T C_MOS Respectively represent the maximum allowable junction temperature and maximum allowable case temperature of SiC MOSFET during switching; V ds represents the drain-source voltage of SiC MOSFET; Z th(JC)(tp)_MOS The pulse is t p The equivalent thermal resistance between the heat source inside the SiC MOSFET chip and the outer shell;

[0056] Get the maximum pulse current that Si IGBT can withstand, including: in, I SOA_IGBT Indicates the maximum tolerable pulse current value of Si IGBT; P tot_IGBT Indicates the maximum power dissipation of Si IGBT; T j_max_IGBT and T C_IGBT They represent the maximum allowable junction temperature and the maximum allowable case temperature of Si IGBT during the switching process respectively; V ce Represents the collector-emitter voltage of Si IGBT; Z th(JC)(tp)_IGBT The pulse is t p The equivalent thermal resistance between the heat source inside the Si IGBT chip and the outer shell;

[0057] In a preferred embodiment of the present invention, I SOA_MOS , ISOA_IGBT From the expression and the data sheets of SiC MOSFET (C3M0075120D) and Si IGBT (IKW25T120), it can be obtained that the maximum pulse current that SiC MOSFET can withstand at a bus voltage of 400V is 39A, and the maximum pulse current that Si IGBT can withstand is 75A.

[0058] In a preferred embodiment of the present invention, obtaining the first data includes:

[0059] The first experimental data is obtained by selecting values ​​from the driving positive voltage range of SiC MOSFET and Si IGBT at a preset step scale and performing any two-by-two combinations until the entire driving positive voltage range of SiC MOSFET and Si IGBT is covered. In a preferred embodiment of the present invention, the preset step scale is 2V.

[0060] A simulation is performed according to the first experimental data to obtain the SiC MOSFET turn-on current peak value and the turn-on loss and conduction loss of the hybrid device in the first experimental data, that is, to obtain the first data.

[0061] The first data includes the turn-on current peak value of the SiC MOSFET and the turn-on loss and conduction loss of the hybrid device when the SiC MOSFET and the Si IGBT are arbitrarily combined with preset step scale values ​​within their respective driving positive voltage ranges.

[0062] In the preferred embodiment of the present invention, the first experimental data and the corresponding SiC MOSFET turn-on current peak data are shown in Figure 2 .

[0063] In the preferred embodiment of the present invention, the first experimental data and the corresponding hybrid device turn-on loss refer to Figure 3 ; The first experimental data and the corresponding hybrid device conduction loss can be found in Figure 4 .

[0064] When simulating according to the first experimental data, the hybrid device is operated in a preset load current range; the preset load current range includes the maximum load current of the hybrid device.

[0065] In a preferred embodiment of the present invention, obtaining the second data includes:

[0066] The second experimental data are obtained by selecting values ​​from the driving negative voltage range of SiC MOSFET and Si IGBT in a preset step scale and performing any two-by-two combinations until the entire driving negative voltage range of SiC MOSFET and Si IGBT is covered.

[0067] The simulation is performed according to the second experimental data to obtain the Si IGBT turn-off current peak value and the turn-off loss of the hybrid device in the second experimental data, that is, to obtain the second data.

[0068] The second data includes the Si IGBT turn-off current peak value and the turn-off loss of the hybrid device when the SiC MOSFET and the Si IGBT are arbitrarily combined with the preset step scale selection value within the respective driving negative voltage range.

[0069] In the preferred embodiment of the present invention, the second experimental data and the corresponding Si IGBT turn-off current peak data are shown in Figure 5 .

[0070] In the preferred embodiment of the present invention, the second experimental data and the corresponding hybrid device turn-off loss refer to Figure 6 .

[0071] When performing simulation according to the second experimental data, the hybrid device is operated in a preset load current range; the preset load current range includes the maximum load current of the hybrid device.

[0072] In a preferred embodiment of the present invention, the maximum load current of the hybrid device is taken into consideration during simulation. When simulation is performed under the maximum load current of the hybrid device, the subsequently selected driving voltage mode can ensure the reliability of the hybrid device in the entire working range, that is, no overcurrent occurs in the entire working range.

[0073] S3, according to the maximum tolerable pulse current value of SiC MOSFET and Si IGBT, the data with current peak exceeding the limit in the first data and the second data are eliminated to obtain the optional range of driving positive voltage and driving negative voltage of SiC MOSFET and Si IGBT. Specifically including:

[0074] All data in the first data in which the peak value of the SiC MOSFET turn-on current is greater than or equal to the maximum pulse current value that the SiC MOSFET can withstand are eliminated, and the driving positive voltage range of the SiC MOSFET in the remaining data is used as the optional driving positive voltage range of the SiC MOSFET; the driving positive voltage range of the Si IGBT in the remaining data is used as the optional driving positive voltage range of the Si IGBT.

[0075] In the preferred embodiment of the present invention, see Figure 2 According to the maximum pulse current value that SiC MOSFET can withstand, Figure 2 The data in are divided by the red dotted line to complete the data elimination.

[0076] All data in the second data in which the Si IGBT turn-off current peak is greater than or equal to the Si IGBT's maximum tolerable pulse current value are eliminated, and the driving negative voltage range of the SiC MOSFET in the remaining data is used as the optional driving negative voltage range of the SiC MOSFET; the driving negative voltage range of the Si IGBT in the remaining data is used as the optional driving negative voltage range of the Si IGBT.

[0077] In the preferred embodiment of the present invention, see Figure 5 According to the maximum pulse current value that Si IGBT can withstand, Figure 5 The data in are divided by the red dotted line to complete the data elimination.

[0078] S4. According to the optional ranges of the driving positive voltage and the driving negative voltage of the SiC MOSFET and the Si IGBT, select the values ​​with the smallest loss as the driving positive voltage and the driving negative voltage of the SiC MOSFET and the Si IGBT respectively.

[0079] In a preferred embodiment of the present invention, according to Figures 2 to 4 Select the positive voltage for driving SiC MOSFET and Si IGBT. The positive voltage for driving SiC MOSFET is 16V, and the positive voltage for driving Si IGBT is 22V. Figures 5 and 6 Select the driving negative voltage of SiC MOSFET and Si IGBT, where the driving negative voltage of SiC MOSFET is -2V and the driving negative voltage of Si IGBT is -15V.

[0080] A preferred embodiment of the present invention further provides a computer medium, including a processor, a memory, and a computer program for implementing the method of the present invention.

[0081] Verification part:

[0082] Based on the double pulse test platform, the current stress and loss of the traditional driving voltage mode (mode 1) and the driving voltage mode designed by the method of the present invention (mode 2) during the switching process are compared. The schematic diagrams of the two modes are shown in Figure 7 Among them, the traditional driving voltage mode generally uses 15V driving positive voltage to ensure the device is fully turned on and has good short-circuit characteristics, and -5V driving negative voltage is used to ensure reliable device shutdown.

[0083] The hybrid device composed of SiC MOSFET (C3M0075120D) and Si IGBT (IKW25T120) is used as the research object, with a load current of 80A. Figure 8 This is a comparison of the comprehensive performance of Si / SiC hybrid devices in two modes.

[0084] exist Figure 8 middle,I dmax_on is the MOSFET turn-on current peak, I cmax_off is the IGBT turn-off current peak value, E on , E cond and E off They are the turn-on, conduction and turn-off losses of the hybrid device, respectively.

[0085] Depend on Figure 8 It can be seen that compared with the traditional driving voltage mode, the driving voltage mode designed by the present invention reduces the peak value of the SiCMOSFET turn-on current by 13.12A, with a reduction rate of 26.2%; the peak value of the Si IGBT turn-off current decreases by 13.86A, with a reduction rate of 18.25%. It can be seen that the peak value of the MOSFET turn-on current and the peak value of the IGBT turn-off current are both reduced to below their safe operating current. In addition, the Si / SiC hybrid device has an overall reduction of 42.4% in terms of turn-on loss, an overall reduction of 29.75% in terms of turn-off loss, and an overall reduction of 14.84% in terms of conduction loss. Therefore, the driving mode designed by the method of the present invention can better achieve the efficiency optimization of the entire working range of the Si / SiC hybrid device while ensuring the reliable operation of the Si / SiC hybrid device.

[0086] The Si / SiC hybrid device driving voltage parameter design method of the present invention comprehensively considers current stress and device loss, obtains the SiC MOSFET turn-on current peak value and the turn-on loss and conduction loss of the hybrid device when SiC MOSFET and Si IGBT are arbitrarily combined with preset step scale values ​​within their respective driving positive voltage ranges; and also obtains the SiIGBT turn-off current peak value and the turn-off loss of the hybrid device when SiC MOSFET and Si IGBT are arbitrarily combined with preset step scale values ​​within their respective driving negative voltage ranges; and provides a data basis for the subsequent division of the optional range of driving voltages of SiC MOSFET and Si IGBT and the selection of driving voltages.

[0087] The driving positive voltage ranges of SiC MOSFET and Si IGBT are divided by the maximum tolerable pulse current value of SiC MOSFET, and the driving negative voltage ranges of SiC MOSFET and Si IGBT are divided by the maximum tolerable pulse current value of Si IGBT, so that the method of the present invention fully considers the current stress, and selecting the driving voltage by the method of the present invention can avoid device overcurrent.

[0088] By selecting the driving voltage with the lowest loss within the divided driving positive voltage range and driving negative voltage range, the method of the present invention fully considers the device loss. By selecting the driving voltage within the divided driving voltage range, the device loss can be reduced as much as possible.

[0089] In summary, the method of the present invention can design the driving voltage parameters of the Si / SiC hybrid device by comprehensively considering the current stress and device loss, and has good practicality.

[0090] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for designing driving voltage parameters of Si / SiC hybrid devices taking into account current stress and device loss, characterized in that: include: Determine the switching mode of the hybrid device as the simultaneous on and off mode of SiC MOSFET and Si IGBT; Get the maximum pulse current values ​​that SiC MOSFET and Si IGBT can withstand, including: Get the maximum pulse current that SiC MOSFET can withstand, including: ， in, Indicates the maximum pulse current value that SiC MOSFET can withstand; Represents the maximum power dissipation of SiC MOSFET; and Respectively represent the maximum allowable junction temperature and maximum allowable case temperature of SiC MOSFET during switching; represents the drain-source voltage of SiC MOSFET; The pulse is The equivalent thermal resistance between the heat source inside the SiC MOSFET chip and the outer shell; Get the maximum pulse current that Si IGBT can withstand, including: ， in, Indicates the maximum tolerable pulse current value of Si IGBT; Indicates the maximum power dissipation of Si IGBT; and They represent the maximum allowable junction temperature and the maximum allowable case temperature of Si IGBT during the switching process respectively; Represents the collector-emitter voltage of Si IGBT; The pulse is The equivalent thermal resistance between the heat source inside the Si IGBT chip and the outer shell; Acquire first data and second data; The first data includes the peak turn-on current of the SiC MOSFET and the turn-on loss and conduction loss of the hybrid device when the SiC MOSFET and the Si IGBT are arbitrarily combined with the preset step scale selection value within their respective driving positive voltage ranges; The second data includes the turn-off current peak value of the Si IGBT and the turn-off loss of the hybrid device when the SiC MOSFET and the Si IGBT are arbitrarily combined with the preset step scale selection value within their respective driving negative voltage ranges; Eliminate the data with current peak exceeding the limit in the first data and the second data according to the maximum tolerable pulse current values ​​of SiC MOSFET and Si IGBT respectively, and obtain the optional range of driving positive voltage and driving negative voltage of SiC MOSFET and Si IGBT; According to the optional ranges of the driving positive voltage and driving negative voltage of the SiC MOSFET and the Si IGBT, the values ​​with the smallest loss are respectively selected as the driving positive voltage and driving negative voltage of the SiC MOSFET and the Si IGBT.

2. The method for designing driving voltage parameters of Si / SiC hybrid devices taking into account current stress and device loss according to claim 1, characterized in that: The removing of data with current peak exceeding the limit in the first data and the second data according to the maximum tolerable pulse current values ​​of SiC MOSFET and Si IGBT respectively comprises: All data in the first data in which the peak value of the SiC MOSFET turn-on current is greater than or equal to the maximum pulse current value that the SiC MOSFET can withstand are eliminated, and the driving positive voltage range of the SiC MOSFET in the remaining data is used as the optional driving positive voltage range of the SiC MOSFET; the driving positive voltage range of the Si IGBT in the remaining data is used as the optional driving positive voltage range of the Si IGBT.

3. The method for designing driving voltage parameters of Si / SiC hybrid devices taking into account current stress and device loss according to claim 2, characterized in that: The removing of data with current peak exceeding the limit in the first data and the second data according to the maximum tolerable pulse current values ​​of SiC MOSFET and Si IGBT respectively further comprises: All data in the second data in which the Si IGBT turn-off current peak is greater than or equal to the Si IGBT's maximum tolerable pulse current value are eliminated, and the driving negative voltage range of the SiC MOSFET in the remaining data is used as the optional driving negative voltage range of the SiC MOSFET; the driving negative voltage range of the Si IGBT in the remaining data is used as the optional driving negative voltage range of the Si IGBT.

4. The method for designing driving voltage parameters of Si / SiC hybrid devices taking into account current stress and device loss according to claim 3, characterized in that: Acquiring the first data includes: Selecting values ​​from the driving positive voltage range of SiC MOSFET and Si IGBT respectively according to a preset step scale and performing any two-by-two combinations until the entire driving positive voltage range of SiC MOSFET and Si IGBT is covered, thereby obtaining first experimental data; A simulation is performed according to the first experimental data to obtain the SiC MOSFET turn-on current peak value and the turn-on loss and conduction loss of the hybrid device in the first experimental data, that is, to obtain the first data.

5. The method for designing driving voltage parameters of Si / SiC hybrid devices taking into account current stress and device loss according to claim 4, characterized in that: Performing simulation according to the first experimental data includes: When simulating according to the first experimental data, the hybrid device is operated in a preset load current range; the preset load current range includes the maximum load current of the hybrid device.

6. The method for designing driving voltage parameters of Si / SiC hybrid devices taking into account current stress and device loss according to claim 5, characterized in that: Acquiring the second data includes: Select values ​​from the driving negative voltage range of SiC MOSFET and Si IGBT respectively with a preset step scale and make any two-by-two combinations until the entire driving negative voltage range of SiC MOSFET and Si IGBT is covered, thereby obtaining second experimental data; The simulation is performed according to the second experimental data to obtain the Si IGBT turn-off current peak value and the turn-off loss of the hybrid device in the second experimental data, that is, to obtain the second data.

7. The method for designing driving voltage parameters of Si / SiC hybrid devices taking into account current stress and device loss according to claim 6, characterized in that: Performing simulation according to the second experimental data includes: When simulation is performed according to the second experimental data, the hybrid device is operated within a preset load current range; the preset load current range includes the maximum load current of the hybrid device.

8. The method for designing driving voltage parameters of Si / SiC hybrid devices taking into account current stress and device loss according to claim 7, characterized in that: Also includes: According to the models of SiC MOSFET and Si IGBT, the driving positive voltage range and driving negative voltage range of SiC MOSFET and Si IGBT are obtained by comprehensively considering the device data sheet, the requirements of SiC MOSFET and Si IGBT being fully turned on and avoiding oscillation.

9. A computer medium, characterized in that The invention comprises a processor, a memory and a computer program for implementing the method according to any one of claims 1 to 8.

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