A printing method, tungsten-rhenium ultra-high temperature radiation temperature sensor and preparation method thereof

Abstract

The present invention proposes a printing method for preparing the sensitive layer and insulating layer of a tungsten-rhenium ultra-high temperature radiation temperature sensor, which comprises pre-treating the positive and negative alumina substrates, sequentially printing the positive and negative sensitive layers on the positive and negative alumina substrates through an electric fluid printing platform, and sintering to form positive and negative sensitive cores. On this basis, a tungsten-rhenium ultra-high temperature radiation temperature sensor and a preparation method thereof are further proposed. The tungsten-rhenium ultra-high temperature radiation temperature sensor comprises a negative sensitive core, an insulating layer and a positive sensitive core from bottom to top. The negative sensitive core comprises a tungsten / rhenium 26 sensitive layer, a negative alumina substrate, a tungsten / rhenium 26 lead and a negative alumina wafer from bottom to top; the positive sensitive core comprises a tungsten sensitive layer, a positive alumina substrate, a tungsten lead and a positive alumina wafer from top to bottom. The temperature measurement range of the sensor is 400°C to 3000°C, which far exceeds the limit temperature of traditional sensors and meets the requirements of extreme environments such as aerospace and metallurgy.

Description

Technical Field

[0001] The invention relates to the technical field of radiation high temperature measurement and monitoring systems, in particular to a printing method, a tungsten-rhenium ultra-high temperature radiation temperature sensor and a preparation method thereof. Background Art

[0002] In many fields such as industry, aerospace, and metallurgy, high-temperature radiation temperature sensors are key devices for measuring the surface temperature of objects, and their performance is crucial to related production and research activities. However, traditional high-temperature radiation temperature sensors face many technical challenges.

[0003] In extremely high temperature environments, due to the different thermal expansion coefficients between the sensor's sensitive layer and the base material, the thermal stress mismatch problem is serious, causing the bonding layer to crack or fall off easily, greatly affecting the long-term stability and reliability of the sensor, and unable to meet the needs of long-term monitoring in high temperature environments. Traditional sensors have a limited temperature measurement range and are usually difficult to cover the extremely high temperature (such as 3000°C) environments required in fields such as aerospace and metallurgy, limiting their application in harsh scenarios.

[0004] Conventional manufacturing processes such as screen printing and physical vapor deposition lack precision at microscales, making it difficult to achieve high-precision material deposition, which hinders the miniaturization of sensors and the improvement of surface fit of complex shapes, and cannot meet the growing demand for miniaturized, high-precision sensors. At the same time, the thickness and uniformity of the sensitive layer of traditional sensors are poor, resulting in low dynamic response speed, and the inability to quickly and accurately reflect temperature changes during high-temperature changes, making it difficult to meet real-time monitoring requirements. In addition, conventional photolithography mask processes are complex and costly, which not only increases the cost of large-scale production, but is also not conducive to diversified customized production, restricting the widespread application and development of high-temperature sensors. The following problems generally exist in existing processes:

[0005] 1. Thermal stress mismatch problem

[0006] In extremely high temperature environments, due to the different thermal expansion coefficients of the materials, large thermal stress is easily generated between the sensitive layer and the substrate of the sensor, causing the bonding layer to crack or fall off, affecting the long-term stability and reliability of the sensor.

[0007] 2. Limited temperature measurement range

[0008] The temperature measurement range of traditional high-temperature radiation temperature sensors usually cannot cover extreme high temperature environments (such as 3000°C), limiting their use in harsh application scenarios such as aerospace and metallurgy.

[0009] 3. Insufficient manufacturing precision

[0010] Conventional processes (such as screen printing, physical vapor deposition, etc.) have difficulty achieving high-precision material deposition at a microscale, resulting in the miniaturization of sensors and limited surface conformity to complex shapes.

[0011] 4. Low dynamic response speed

[0012] During high temperature changes, traditional sensors have slow dynamic response speeds due to poor thickness and uniformity of the sensitive layer and cannot meet real-time monitoring needs.

[0013] 5. High manufacturing cost

[0014] Conventional photolithography mask processes are complex and expensive, which increases the cost of large-scale production of high-temperature sensors and is not conducive to diversified customization needs. Summary of the invention

[0015] In order to solve the above technical problems existing in the prior art, the present invention proposes a printing method for preparing a sensitive layer and an insulating layer of a tungsten-rhenium ultra-high temperature radiation temperature sensor and a preparation method of a tungsten-rhenium ultra-high temperature radiation temperature sensor. The above technical problems are solved.

[0016] According to a first aspect of the present invention, a method for preparing a sensitive layer and an insulating layer of a tungsten-rhenium ultrahigh temperature radiation temperature sensor is provided, comprising:

[0017] After pre-treating the positive and negative alumina substrates, the positive and negative electrode sensitive layers are sequentially printed on the positive and negative alumina substrates through an electrofluidic printing platform, and sintered to form positive and negative electrode sensitive cores. The printed positive electrode slurry includes tungsten slurry and diluent, and the ratio is 5:1 to 5:2. The negative electrode slurry includes tungsten slurry, rhenium powder and diluent, and the ratio is 3.7:1.8:1 to 3.7:1.8:2.

[0018] S2: Printing an insulating layer between the positive and negative sensitive cores of the positive alumina substrate;

[0019] S1 and S2 are both printed by an electrofluidic printing platform, which includes a two-dimensional motion platform, a syringe and a micro-injection pump. The electrofluidic printing parameters in S1 and S2 are that the voltage applied to the needle tip of the syringe is within the range of 3kV-4kV, the speed of the two-dimensional motion platform is within the range of 50mm / s-70mm / s, and the height of the needle tip from the two-dimensional motion platform is within the range of 3cm-5cm. This setting ensures the stability and accuracy of the jet flow, realizes high-precision material deposition at the micron level, enables the insulating layer to effectively isolate the positive and negative electrodes, prevent electrical interference, and ensure the microstructure and thickness uniformity of the sensitive layer, improve the electrical performance, spatial resolution and temperature measurement accuracy of the sensor, and is conducive to the manufacture of miniaturized sensors.

[0020] In some specific embodiments, the pretreatment of the positive and negative aluminum oxide substrates specifically includes ultrasonic cleaning with alcohol for ten minutes, cleaning with acetone for five minutes, and then bombarding the positive and negative aluminum oxide substrates with gas plasma for 100-120 seconds after being completely air-dried. Alcohol and acetone cleaning removes surface oil and impurities, and air drying ensures that there is no residual solvent that affects subsequent processes. Gas plasma bombardment further enhances surface activity and increases surface energy, so that the subsequent printed slurry can better adhere and spread, and improves the bonding force between the sensitive layer and the substrate, thereby improving the stability and reliability of the overall structure of the sensor, and providing a guarantee for the long-term stable operation of the sensor in an extremely high temperature environment.

[0021] In some specific embodiments, the particle size of the tungsten slurry in the slurry is within the range of 1-3 microns, and the particle size of the rhenium powder is within the range of 12-17 microns. The appropriate particle size range helps to form a uniform and dense sensitive layer during the printing process, ensuring the physical and chemical stability of the material at high temperatures. Tungsten slurry with a smaller particle size can provide better uniformity, and when combined with rhenium powder in a specific particle size range, it can achieve more accurate temperature perception and signal transmission in a high temperature environment, improve the temperature measurement accuracy and sensitivity of the sensor, and enhance the thermal shock resistance of the sensitive layer.

[0022] In some specific embodiments, the prepared positive electrode slurry and negative electrode slurry are stirred for at least 90 minutes on a magnetic stirring table with a disk temperature of 45°C and a rotation speed of 1500 rpm. With this setting, the tungsten slurry, rhenium powder and diluent are evenly dispersed, and the components are prevented from agglomerating or settling, ensuring the stability of the slurry performance during the printing process, thereby making the sensitive layer and insulating layer materials formed by the printing have good uniformity, without performance fluctuations caused by local component differences, improving the consistency and reliability of the sensor, and providing a guarantee for achieving high-precision temperature measurement.

[0023] In some specific embodiments, after printing the positive and negative electrode sensitive layers in S1, the process further includes: bonding the leads and wafers corresponding to the positive and negative electrode sensitive layers respectively, and sintering to form the positive and negative electrode sensitive cores; and the bonding process in S1 and S3 uses a digital display heating plate, and the bonding parameters are heating at 350-400°C for 25-30 minutes. The bonding operation connects the sensitive layer with the leads and wafers into a complete conductive path to ensure the reliability of the sensor signal transmission; through the parameter setting of the digital display heating plate, each component is well bonded at a suitable temperature and time, ensuring the connection strength and electrical contact stability, preventing looseness or poor contact during subsequent processing and use, improving the structural integrity and long-term stability of the sensor, and ensuring the normal operation of the sensor in a high temperature environment.

[0024] According to a second aspect of the present invention, a method for preparing a tungsten-rhenium ultra-high temperature radiation temperature sensor is proposed, which is characterized in that it includes the above-mentioned printing method and also includes: bonding positive and negative electrode sensitive cores, and sintering the bonded positive and negative electrode sensitive cores to form a high temperature radiation temperature sensor.

[0025] In some specific embodiments, the sintered and bonded positive and negative electrode sensitive core of S3 specifically includes: introducing inert gas, raising the temperature to 1100°C at a rate of 10°C / min, and after maintaining at 1100°C for 30 minutes, lowering the temperature to room temperature at an annealing rate of 10°C / min. This setting helps to stabilize the internal structure of the sensor, eliminate residual stress, and improve the bonding strength between layers, so that the sensor can maintain good performance during high-temperature radiation temperature measurement, reduce structural deformation or performance degradation caused by temperature changes, ensure long-term stable operation of the sensor, and improve its service life and measurement accuracy.

[0026] According to the third aspect of the present invention, a tungsten-rhenium ultra-high temperature radiation temperature sensor prepared by the above-mentioned preparation method is proposed, which includes a negative electrode sensitive core, an insulating layer and a positive electrode sensitive core from bottom to top, and the negative electrode sensitive core includes a tungsten / rhenium 26 sensitive layer, a negative electrode aluminum oxide substrate, a tungsten / rhenium 26 lead and a negative electrode aluminum oxide wafer from bottom to top; the positive electrode sensitive core includes a tungsten sensitive layer, a positive electrode aluminum oxide substrate, a tungsten lead and a positive electrode aluminum oxide wafer from top to bottom. This structural design enables the sensor to achieve accurate measurement of high temperature radiation temperature through the synergistic effect of each layer of material, while ensuring that the sensor meets the use requirements in a high temperature environment in terms of electrical performance, thermal stability and mechanical strength, and ensures the realization of the overall function of the sensor and the optimization of its performance.

[0027] In some specific embodiments, the size of the positive electrode alumina substrate and the negative electrode alumina substrate is 3 mm×10 mm×100 μm.

[0028] In some specific embodiments, the temperature measurement range of the tungsten-rhenium ultra-high temperature radiation temperature sensor is 400-3000°C.

[0029] The present invention provides a printing method for preparing a sensitive layer and an insulating layer of a tungsten-rhenium ultra-high temperature radiation temperature sensor and a preparation method of a tungsten-rhenium ultra-high temperature radiation temperature sensor, which have the following technical effects:

[0030] 1. Achieve efficient bonding with low thermal stress across a large temperature range: The electrofluidic printing technology is used to ensure uniform stress distribution between the positive and negative sensitive cores and the insulating layer through precise material deposition and layered bonding. Combined with optimized sintering and annealing processes (such as segmented heating and cooling control), high-temperature stable bonding with low thermal stress is achieved. The structural failure problem caused by thermal expansion coefficient mismatch in existing high-temperature radiation temperature sensors in extreme temperature ranges is solved, and the reliability and durability of the sensor are significantly improved.

[0031] 2. Suitable for the manufacture of micro-scale sensors: Through the high-resolution material deposition process of electrofluidic printing technology and the bonding technology of digital display heating plate with precise temperature control, the processing accuracy and quality of sensitive layers and leads are ensured at the micro scale. The manufacture of micro-scale sensors of 3mm×10mm×100μm is realized, filling the gap of traditional technology in the field of miniaturization, and is suitable for high-temperature measurement on complex surfaces and space-constrained environments.

[0032] 3. Extended temperature measurement range: By optimizing the particle size and ratio of the sensitive layer material (tungsten and tungsten / rhenium 26), combined with precise sintering temperature control, the sensor has excellent thermal stability and conduction performance in high temperature environments. The high-temperature radiation temperature sensor of the present invention has a temperature measurement range of 400°C to 3000°C, far exceeding the limit temperature of traditional sensors, and meets the needs of extreme environments such as aerospace and metallurgy. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate the embodiments and together with the description are used to explain the principles of the present invention. Other embodiments and many of the expected advantages of the embodiments will be readily appreciated as they become better understood by reference to the following detailed description. Other features, objects and advantages of the present invention will become more apparent by reading the detailed description of the non-limiting embodiments made with reference to the following drawings:

[0034] Figure 1 It is a flow chart of a printing method for preparing a sensitive layer and an insulating layer of a tungsten-rhenium ultra-high temperature radiation temperature sensor according to an embodiment of the invention;

[0035] Figure 2 is a schematic structural diagram of an electro-fluid printing platform according to a specific embodiment of the invention;

[0036] Figure 3 is a schematic diagram of bonding of a digital display heating plate according to a specific embodiment of the invention;

[0037] Figure 4 is a schematic structural diagram of a tungsten-rhenium ultrahigh temperature radiation temperature sensor according to an embodiment of the invention;

[0038] Figure 5 It is an exploded view of a tungsten-rhenium ultra-high temperature radiation temperature sensor according to a specific embodiment of the invention. DETAILED DESCRIPTION

[0039] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It is also necessary to explain that, for ease of description, only the parts related to the relevant invention are shown in the accompanying drawings.

[0040] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0041] Figure 1 FIG. 1 shows a flow chart of a printing method for preparing a sensitive layer and an insulating layer of a tungsten-rhenium ultra-high temperature radiation temperature sensor according to an embodiment of the invention. Figure 1 As shown, the specific steps include the following:

[0042] S101: After pre-treatment of the positive and negative alumina substrates, the positive and negative electrode sensitive layers are sequentially printed on the positive and negative alumina substrates through an electrofluidic printing platform, and sintered to form positive and negative electrode sensitive cores. The printed positive electrode slurry includes tungsten slurry and diluent, and the ratio is 5:1-2. The negative electrode slurry includes tungsten slurry, rhenium powder and diluent, and the ratio is 3.7:1.8:1-2.

[0043] In a specific embodiment, the pretreatment of the positive and negative alumina substrates specifically includes ultrasonic cleaning with alcohol for ten minutes, cleaning with acetone for five minutes, and then bombarding the positive and negative alumina substrates with gas plasma for 100-120 seconds after being completely air-dried. Ultrasonic cleaning reduces the damage to the substrate compared to chemical cleaning and also performs deep cleaning. The subsequent gas plasma bombardment further cleans the surface of the flexible substrate and improves the hydrophilicity, wettability and adhesion of the substrate.

[0044] In a specific embodiment, the particle size of the tungsten slurry in the slurry is within the range of 1-3 microns, and the particle size of the rhenium powder is within the range of 12-17 microns. The specific ratio of tungsten slurry to diluent in the positive electrode slurry affects the printing effect and the performance of the sensitive layer. The appropriate ratio helps to form a uniform coating and ensure the good electrical and thermal properties of tungsten at high temperatures. The ratio of tungsten slurry, rhenium powder and diluent in the negative electrode slurry takes into account both the adjustment of the thermal expansion coefficient and the optimization of electrical performance, so that the negative electrode sensitive layer can effectively reduce the thermal stress mismatch when working with the positive electrode, improve the overall stability and temperature measurement accuracy of the sensor, especially in the large temperature range. The configured positive electrode slurry and negative electrode slurry are stirred for at least 90 minutes on a magnetic stirring table with a disk temperature of 45°C and a rotation speed of 1500rpm.

[0045] In a specific embodiment, an inert gas is introduced during the sintering process of the positive and negative electrode sensitive cores, and the sintering process is as follows: first, the temperature is raised to 1400°C at a rate of 10°C / min, then raised to 1500°C at a rate of 5°C / min, and after being maintained at 1500°C for 30 minutes, it is first reduced to 1400°C at an annealing rate of 5°C / min, and then reduced to room temperature at a rate of 10°C / min. The precise sintering and annealing temperatures allow the tungsten and tungsten / rhenium 26 thin films to sinter and crystallize, thereby forming a conductive loop for the sensor sensitive layer. Too low a sintering temperature makes it difficult for the thin film to sinter and crystallize, and the sensor will not form a conductive loop. Too high a sintering and annealing temperature will make the porosity of the thin film too large, affecting the performance of the sensor.

[0046] S102: Printing an insulating layer between the positive and negative sensitive cores of the positive alumina substrate.

[0047] In a specific embodiment, the insulating layer is also printed by an electrofluidic printing platform, and the specific process is an atomization process. Figure 2 FIG. 4 shows a schematic diagram of the structure of an electro-fluid printing platform according to a specific embodiment of the invention. Figure 2 As shown, the electrofluidic printing platform includes a two-dimensional motion platform 1, a syringe 2, and a micro-injection pump 3. The syringe is connected to a high-voltage power supply during atomization printing. The electrofluidic printing parameters of the above-mentioned printing process are that the voltage applied to the needle tip of the syringe is 3kV-4kV, the speed of the two-dimensional motion platform is 50mm / s-70mm / s, and the height of the needle tip from the two-dimensional motion platform is 3cm-5cm. The voltage and the height of the needle tip from the two-dimensional motion platform can affect the atomization angle of the atomization printing, and the moving speed of the two-dimensional motion platform can be coordinated to control the thickness of the printed film. If the thickness is too thin, printing defects may occur, and if it is too thick, thermal stress mismatch problems may occur during bonding. With this parameter, atomization printing can obtain a dense, uniform, and reliable film.

[0048] Based on the above-mentioned printing method, a preparation method of a tungsten-rhenium ultra-high temperature radiation temperature sensor is further proposed, which also includes: bonding positive and negative electrode sensitive cores, and sintering the bonded positive and negative electrode sensitive cores to form a high temperature radiation temperature sensor.

[0049] In a specific embodiment, the bonding in the above steps is performed using a digital display heating plate. Figure 3 A schematic diagram of a digital display heating plate bonding according to a specific embodiment of the invention is shown, Figure 3 As shown, the object to be bonded is placed in the digital display heating plate 13 to complete the bonding operation. The specific bonding parameters are heating at 350-400°C for 25-30 minutes. This parameter is for preliminary curing. Too little temperature or heating time will lead to incomplete curing, and too much temperature or time will cause the film thermal stress mismatch and cracking.

[0050] In a specific embodiment, an inert gas is also introduced during the sintering process. The specific sintering process is as follows: first, the temperature is raised to 1100°C at a rate of 10°C / minute, and after maintaining at 1100°C for 30 minutes, the temperature is lowered to room temperature at an annealing rate of 10°C / minute. The precise sintering and annealing temperatures greatly improve the insulation performance and bonding strength of the insulating layer 6. This process is to make the insulating layer sintered completely. Sintering at a temperature exceeding or below 1100°C will make the porosity of the insulating layer too large, which will greatly reduce the insulation performance of the insulating layer. At the same time, it is very likely to cause the insulating layer to crack and the bonding failure, thereby reducing the temperature measurement stability of the sensor. Sintering with this parameter will cause the insulating layer to form a dense glass phase, and the insulation and bonding strength will be greatly improved.

[0051] In a specific embodiment, during the sensor preparation process, after printing the positive and negative electrode sensitive layers, the process further includes: bonding the leads and wafers corresponding to the positive and negative electrode sensitive layers respectively. Specifically, step S101 can be specifically embodied as follows:

[0052] a. After ultrasonic cleaning of the alumina substrate, bombardment of the surface of the positive and negative alumina substrates with gas plasma;

[0053] b. Use tungsten slurry, rhenium powder and diluent to prepare the positive and negative sensitive layer slurry of the high-temperature radiation temperature sensor;

[0054] c. Using an electrofluidic platform to print a positive tungsten sensitive layer on a positive alumina substrate;

[0055] d. Use a digital display heating plate to bond the positive alumina wafer, tungsten lead and tungsten sensitive layer;

[0056] e. Using an electrofluidic platform to print a negative electrode tungsten / rhenium 26 sensitive layer on a negative electrode alumina substrate;

[0057] f. Use a digital display heating plate to bond the negative alumina wafer, tungsten / rhenium 26 lead and tungsten / rhenium 26 sensitive layer;

[0058] g. Use a tubular furnace to sinter the bonded positive and negative electrode sensitive cores.

[0059] In a specific embodiment, the size of the alumina substrate used in the present application is 3mm×10mm×100µm, and its surface has a certain degree of roughness and chemical activity. After the above-mentioned pretreatment (first ultrasonic cleaning with alcohol for ten minutes, cleaning with acetone for five minutes and completely air-dried, and then bombarding with gas plasma for 100-120 seconds), the surface can be effectively cleaned and the surface properties can be increased, making it more conducive to the adhesion and spreading of the slurry during the electrofluid printing process. Electrofluid printing drives the micron or even nanometer-level jet flow through an electric field, requiring the substrate surface to be well combined with the printing slurry. The surface state of the alumina substrate after treatment can meet this requirement, ensuring that the slurry can be evenly and stably deposited on the substrate during the printing process to form a high-quality sensitive layer and insulating layer. The high temperature stability of the alumina substrate (such as maintaining structural stability in the high temperature range of 400℃-3000℃ involved in the present invention) is compatible with the electrofluid printing process. During the printing process, especially when subsequent processes such as high-temperature sintering are involved, the substrate will not deform or crack due to temperature changes, thereby ensuring the integrity and stability of the printed layer. For example, during the sintering process, the alumina substrate can withstand high temperature environments, so that the sensitive layer and insulating layer printed on it can be tightly combined with the substrate after sintering to form a solid overall structure, which is conducive to improving the performance and reliability of the sensor. The good electrical insulation properties of alumina work in synergy with the electrical properties of the printing slurry. The printing slurry is used to form the sensitive layer and insulating layer of the sensor. When the sensor is working, it is necessary to ensure electrical isolation between the layers to accurately transmit the temperature signal. The insulation of the alumina substrate provides a stable foundation for the electrical function of the printing slurry, prevents current leakage or interference, and ensures that the sensor can accurately measure the high-temperature radiation temperature. The alumina substrate has good compatibility with the printing slurry in chemical properties, and will not chemically react with the components in the slurry, ensuring the stability and performance of the slurry. At the same time, the chemical compatibility helps promote the chemical bonding between the sensitive layer and the substrate during the sintering process, enhances the overall structural strength of the sensor, and improves the durability of the sensor in high-temperature environments. The alumina substrate can be processed into a tiny size of 3mm×10mm×100µm, which matches the high-resolution characteristics of electrofluidic printing. Electrofluidic printing can achieve micron-level material deposition, and can accurately construct sensitive layer and insulating layer structures on miniaturized substrates to meet the needs of sensor miniaturization and high spatial resolution measurement. The combination of the two helps to manufacture high-precision, miniaturized and high-performance high-temperature radiation temperature sensors that meet the requirements of conformity to complex-shaped surfaces and expand the application range of sensors.

[0060] Figure 4 The structure diagram of the tungsten-rhenium ultra-high temperature radiation temperature sensor according to an embodiment of the invention is shown. Figure 5An exploded view of a tungsten-rhenium ultra-high temperature radiation temperature sensor according to a specific embodiment of the invention is shown, combined with Figure 4 and Figure 5 The tungsten-rhenium ultra-high temperature radiation temperature sensor prepared by the above preparation method includes a negative electrode sensitive core, an insulating layer 6 and a positive electrode sensitive core from bottom to top. The negative electrode sensitive core includes a tungsten / rhenium 26 sensitive layer 8, a negative electrode aluminum oxide substrate 5, a tungsten / rhenium 26 lead 10 and a negative electrode aluminum oxide wafer 12 from bottom to top; the positive electrode sensitive core includes a tungsten sensitive layer 7, a positive electrode aluminum oxide substrate 4, a tungsten lead 9 and a positive electrode aluminum oxide wafer 11 from top to bottom. The overall structure of the sensor is compact, and the layout of each layer is reasonable, achieving a miniaturized size of 3mm×10mm×100µm. The insulating layer set in the structure effectively isolates the positive and negative electrode sensitive cores, prevents current leakage or interference, and ensures the stability of the internal electrical performance of the sensor. The precise bonding and sintering processes form good electrical connections between the layers, ensuring that the temperature signal can be transmitted accurately and stably, improving the accuracy and reliability of the sensor's temperature measurement, and overcoming the shortcomings of traditional sensors in electrical performance, such as signal interference and transmission loss. This miniaturized structure combined with the high-precision material deposition achieved by electrofluidic printing technology enables the sensor to adapt to the fit requirements of complex-shaped surfaces and has high spatial resolution measurement capabilities. Compared with traditional sensors, it has obvious advantages in small spaces or measurement scenarios with high spatial resolution requirements, and can provide more accurate temperature distribution information.

[0061] The above description is only a preferred embodiment of the present invention and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present invention is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the above inventive concept. For example, the above features are replaced with the technical features with similar functions disclosed in the present invention (but not limited to) to form a technical solution.

Claims

1. A printing method for preparing a sensitive layer and an insulating layer of a tungsten-rhenium ultra-high temperature radiation temperature sensor, characterized in that: include: S1: After pre-treating the positive and negative alumina substrates, the positive and negative electrode sensitive layers are sequentially printed on the positive and negative alumina substrates by an electrofluidic printing platform, and sintered to form positive and negative electrode sensitive cores, wherein the printed positive electrode slurry includes tungsten slurry and diluent in a ratio of 5:1 to 5:2, and the negative electrode slurry includes tungsten slurry, rhenium powder and diluent in a ratio of 3.7:1.8:1 to 3.7:1.8:2; S2: printing an insulating layer between the positive and negative electrode sensitive cores of the positive and negative electrode aluminum oxide substrates; Both S1 and S2 are printed by an electrofluidic printing platform, which includes a two-dimensional motion platform, a syringe and a micro-injection pump. The electrofluidic printing parameters in S1 and S2 are that the voltage applied to the needle tip of the syringe is within the range of 3kV-4kV, the speed of the two-dimensional motion platform is within the range of 50mm / s-70mm / s, and the height of the needle tip from the two-dimensional motion platform is within the range of 3cm-5cm.

2. The printing method according to claim 1, characterized in that: The pretreatment of the positive and negative alumina substrates specifically includes ultrasonic cleaning with alcohol for ten minutes, cleaning with acetone for five minutes, and completely air-drying, and then bombarding the positive and negative alumina substrates with gas plasma for 100-120 seconds.

3. The printing method according to claim 1, characterized in that: The particle size of the tungsten slurry in the slurry is within the range of 1-3 microns, and the particle size of the rhenium powder is within the range of 12-17 microns.

4. The printing method according to claim 1, characterized in that: The prepared positive electrode slurry and negative electrode slurry were stirred on a magnetic stirring table with a plate temperature of 45° C. and a rotation speed of 1500 rpm for at least 90 minutes.

5. The printing method according to claim 1, characterized in that: The sintering of S1 to form the positive and negative electrode sensitive core specifically includes: introducing an inert gas, raising the temperature to 1400°C at a rate of 10°C / min, then raising the temperature to 1500°C at a rate of 5°C / min, and after maintaining at 1500°C for 30 minutes, first lowering the temperature to 1400°C at an annealing rate of 5°C / min, and then lowering the temperature to room temperature at a rate of 10°C / min.

6. A method for preparing a tungsten-rhenium ultrahigh temperature radiation temperature sensor, characterized in that: The printing method according to any one of claims 1 to 5 further comprises: bonding positive and negative electrode sensitive cores, and sintering the bonded positive and negative electrode sensitive cores to form an ultra-high temperature radiation temperature sensor.

7. The method for preparing the tungsten-rhenium ultrahigh temperature radiation temperature sensor according to claim 6, characterized in that: The sintering and bonding of the positive and negative electrode sensitive cores specifically includes: introducing an inert gas, raising the temperature to 1100° C. at a rate of 10° C. / min, and after maintaining at 1100° C. for 30 minutes, lowering the temperature to room temperature at an annealing rate of 10° C. / min.

8. A tungsten-rhenium ultrahigh temperature radiation temperature sensor prepared by the preparation method according to any one of claims 6 to 7, characterized in that: From bottom to top, it includes a negative electrode sensitive core, an insulating layer and a positive electrode sensitive core. The negative electrode sensitive core includes a negative electrode aluminum oxide substrate, a tungsten / rhenium 26 sensitive layer, a tungsten / rhenium 26 lead and a negative electrode aluminum oxide wafer from top to bottom; the positive electrode sensitive core includes a positive electrode aluminum oxide substrate, a tungsten sensitive layer, a tungsten lead and a positive electrode aluminum oxide wafer from bottom to top.

9. The tungsten-rhenium ultrahigh temperature radiation temperature sensor according to claim 8, characterized in that: The dimensions of the positive electrode alumina substrate and the negative electrode alumina substrate are 3 mm×10 mm×100 μm.

10. The tungsten-rhenium ultrahigh temperature radiation temperature sensor according to claim 8, characterized in that: The temperature measurement range of the tungsten-rhenium ultra-high temperature radiation temperature sensor is 400-3000°C.

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