(012) crystal face oriented bismuth metal film and preparation method thereof

Abstract

The invention discloses a (012) crystal face oriented bismuth metal film and a preparation method thereof. The preparation method comprises the following steps: providing a substrate; forming a two-dimensional material film on the surface of the substrate; and depositing bismuth on the two-dimensional material film by adopting an electron beam coating technology to obtain the (012) crystal face oriented bismuth metal film. According to the preparation method, interface engineering is utilized, the two-dimensional material thin film is formed on the surface of the substrate to reduce the forming energy of the (012) crystal face orientation bismuth metal thin film, then low-energy electron beam deposition is utilized to achieve preparation of the (012) crystal face orientation bismuth metal thin film, and the preparation means of the (012) orientation bismuth metal thin film are expanded.

Description

Technical Field

[0001] The invention relates to the technical field of electronic materials, and in particular to a bismuth metal film with a (012) crystal plane orientation and a preparation method thereof. Background Art

[0002] Semimetallic bismuth (Bi) thin films have unique electrical, optical and magnetic properties. Crystalline orientation has a great influence on the electrical and optical properties of bismuth metal films.

[0003] Since the growth energy of (003) oriented bismuth metal film is lower, bismuth metal film usually tends to grow in (003) orientation. However, (012) oriented bismuth metal film can only be obtained by high-energy laser pulse deposition and electrochemical deposition, and is difficult to prepare by low-energy electron beam deposition and other technologies, which seriously limits the preparation and application of (012) oriented bismuth metal film.

[0004] Therefore, the prior art still needs to be improved and developed. Summary of the invention

[0005] In view of the above-mentioned deficiencies in the prior art, the present invention provides a (012) crystal plane oriented bismuth metal film and a preparation method thereof, so as to solve the problem that the (012) crystal plane oriented bismuth metal film can only be obtained by high-energy laser pulse deposition or electrochemical deposition.

[0006] The technical solution adopted by the present invention to solve the above technical problems is as follows:

[0007] In a first aspect of the present invention, a method for preparing a bismuth metal film with a (012) crystal plane orientation is provided, the preparation method comprising the following steps:

[0008] providing a substrate;

[0009] forming a two-dimensional material film on the surface of the substrate;

[0010] Bismuth is deposited on the two-dimensional material film by electron beam coating technology to obtain the bismuth metal film with (012) crystal plane orientation.

[0011] Preferably, the two-dimensional material is selected from one or more of molybdenum disulfide, tungsten disulfide, and tungsten diselenide.

[0012] Preferably, the thickness of the two-dimensional material film is a single layer or multiple layers.

[0013] Preferably, a two-dimensional material film is formed on the surface of the substrate by a growth or transfer method on the substrate.

[0014] Preferably, the method for growing the two-dimensional material thin film on the substrate is chemical vapor deposition.

[0015] Preferably, the thickness of the (012) crystal plane oriented bismuth metal film prepared by the preparation method is 5-1000 nm.

[0016] Preferably, the step of using electron beam coating technology to deposit bismuth on the two-dimensional material film to obtain the (012) crystal plane oriented bismuth metal film is specifically as follows: placing the substrate with the two-dimensional material film formed on the surface in an electron beam coating device, setting the parameters of the electron beam coating device, and -2 Under a vacuum degree of Pa, bismuth is deposited on the two-dimensional material film to obtain the bismuth metal film with (012) crystal plane orientation.

[0017] Preferably, the parameters of the electron beam coating device include: a deposition rate of 0.1-1 angstrom per second.

[0018] Preferably, the substrate is selected from silicon dioxide and aluminum oxide.

[0019] In a second aspect of the present invention, a bismuth metal film with a (012) crystal plane orientation is provided. The bismuth metal film with a (012) crystal plane orientation is prepared by the above-mentioned preparation method.

[0020] Beneficial effects:

[0021] The present invention discloses a (012) crystal plane oriented bismuth metal film and a preparation method thereof. The preparation method of the present invention utilizes interface engineering to form a two-dimensional material film on the surface of a substrate to reduce the formation energy of the (012) crystal plane oriented bismuth metal film, and then utilizes low-energy electron beam deposition to achieve the preparation of the (012) crystal plane oriented bismuth metal film, thereby expanding the preparation means of the (012) oriented bismuth metal film. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A flow chart of the preparation of a (012) oriented bismuth metal film according to a preferred embodiment of the present invention;

[0023] Figure 2 X-ray diffraction images of the 40 nm bismuth films prepared in Example 1 of the present invention and Comparative Example 1. DETAILED DESCRIPTION

[0024] The present invention provides a (012) crystal plane oriented bismuth metal film and a preparation method thereof. To make the purpose, technical solution and effect of the present invention clearer and more specific, the present invention is further described in detail below. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0025] The present invention provides a method for preparing a (012) oriented bismuth metal film. Figure 1 As shown, the preparation method comprises the following steps:

[0026] providing a substrate;

[0027] forming a two-dimensional material film on the surface of the substrate;

[0028] Bismuth is deposited on the two-dimensional material film by electron beam coating technology to obtain the bismuth metal film with (012) crystal plane orientation.

[0029] The preparation method provided in an embodiment of the present invention utilizes interface engineering to form a two-dimensional material film on the surface of the substrate to reduce the formation energy of the (012) crystal plane oriented bismuth metal film, and then utilizes low-energy electron beam deposition to achieve the preparation of the (012) crystal plane oriented bismuth metal film, thereby expanding the preparation methods of the (012) oriented bismuth metal film.

[0030] In the embodiment of the present invention, a (012) preferentially oriented bismuth (Bi) metal film is deposited by electron beam coating technology, but the invention is not limited thereto.

[0031] In some embodiments, the two-dimensional material is selected from one or more of molybdenum disulfide, tungsten disulfide, and tungsten diselenide.

[0032] In some embodiments, the two-dimensional material film is a single layer or a multilayer.

[0033] In some embodiments, a two-dimensional material thin film is formed on the surface of the substrate by growing or transferring the thin film on the substrate.

[0034] In some embodiments, the method of growing the two-dimensional material thin film on the substrate is chemical vapor deposition.

[0035] The two-dimensional material film of the present invention can be formed on the surface of the substrate in any manner and is not limited to the above examples.

[0036] In some embodiments, the thickness of the (012) oriented bismuth metal film prepared by the preparation method is 5-1000 nm.

[0037] In some embodiments, the step of depositing bismuth on the two-dimensional material film by electron beam coating technology to obtain the (012) oriented bismuth metal film is specifically as follows: placing the substrate with the two-dimensional material film formed on the surface in an electron beam coating device, setting the parameters of the electron beam coating device, and -2 Under a vacuum degree of Pa, bismuth is deposited on the two-dimensional material film to obtain the bismuth metal film with (012) crystal plane orientation.

[0038] In some embodiments, parameters of the electron beam coating device include a deposition rate of 0.1-1 angstrom per second.

[0039] In some embodiments, before the step of forming a two-dimensional material film on the substrate surface, the substrate is also cleaned. Specifically, the cleaning process includes ultrasonically cleaning the substrate with acetone, anhydrous ethanol and deionized water, respectively, and the cleaning time is 5 minutes.

[0040] In some embodiments, the substrate is selected from silicon dioxide and aluminum oxide.

[0041] The embodiment of the present invention provides a bismuth metal film with a (012) crystal plane orientation. The bismuth metal film with a (012) crystal plane orientation is prepared by the above-mentioned preparation method.

[0042] The technical solutions in the embodiments of the present invention are described clearly and completely below. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments, and are only for illustrating the present invention but not limiting the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present invention.

[0043] Example 1

[0044] A preparation method of a (012) oriented bismuth metal film comprises the following steps:

[0045] The SiO2 / Si (285nm SiO2) substrate was ultrasonically cleaned with acetone, anhydrous ethanol and deionized water for 5 minutes respectively. After the substrate was dried with a nitrogen gun, the residual water and oxygen on the substrate surface were removed by plasma cleaning. A large area of ​​MoS2 was transferred on the substrate by chemical vapor deposition. The substrate with MoS2 formed on the surface was placed in an electron beam coating device for less than 10 -4 Under a vacuum degree of 1.5 Å, a 40 nm thick Bi metal film (referred to as Bi(40 nm) metal film) is deposited at a deposition rate of 0.4 Å per second for a deposition time of 1000 s. The SiO2 / Si(285 nm SiO2) substrate is a silicon substrate with 285 nm SiO2 on its surface.

[0046] The prepared Bi (40nm) metal film has a (012) preferred orientation.

[0047] Example 2

[0048] A preparation method of a (012) oriented bismuth metal film comprises the following steps:

[0049] The SiO2 / Si (285nm SiO2) substrate was ultrasonically cleaned with acetone, anhydrous ethanol and deionized water for 5 minutes respectively. After the substrate was dried with a nitrogen gun, the residual water and oxygen on the substrate surface were removed by plasma cleaning. A large area of ​​MoS2 was transferred on the substrate by chemical vapor deposition. The substrate with MoS2 formed on the surface was placed in an electron beam coating device for less than 10 -4 Pa, a Bi (20 nm) metal film was deposited at a deposition rate of 0.4 angstroms per second and a deposition time of 500 s.

[0050] The prepared Bi (20nm) film has a (012) preferred orientation.

[0051] Example 3

[0052] A preparation method of a (012) oriented bismuth metal film comprises the following steps:

[0053] The SiO2 / Si (285nm SiO2) substrate was ultrasonically cleaned with acetone, anhydrous ethanol and deionized water for 5 minutes respectively. After the substrate was dried with a nitrogen gun, the residual water and oxygen on the substrate surface were removed by plasma cleaning. A large area of ​​WS2 was transferred on the substrate by chemical vapor deposition. The substrate with WS2 formed on the surface was placed in an electron beam coating device for less than 10 -4 Pa, a Bi (40 nm) metal film was deposited at a deposition rate of 0.4 angstroms per second and a deposition time of 1000 s.

[0054] The prepared Bi (40nm) film has a (012) preferred orientation.

[0055] Comparative Example 1

[0056] A bismuth metal film is prepared. The method of this comparative example is basically the same as the method of Example 1, except that a large area of ​​MoS2 is not transferred on the SiO2 / Si (285nm SiO2) substrate.

[0057] like Figure 2 As shown, the Bi (40 nm) metal film prepared in Example 1 has a preferred orientation of (012). The Bi (40 nm) metal film prepared in Comparative Example 1 has a preferred orientation of (003).

[0058] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A method for preparing a (012) oriented bismuth metal film, characterized in that: The preparation method comprises the following steps: providing a substrate; forming a two-dimensional material film on the surface of the substrate; Bismuth is deposited on the two-dimensional material film by electron beam coating technology to obtain the bismuth metal film with (012) crystal plane orientation.

2. The method for preparing a (012) oriented bismuth metal film according to claim 1, characterized in that: The two-dimensional material is selected from one or more of molybdenum disulfide, tungsten disulfide, and tungsten diselenide.

3. The method for preparing a (012) oriented bismuth metal film according to claim 1, characterized in that: The two-dimensional material film is a single layer or multiple layers.

4. The method for preparing a (012) oriented bismuth metal film according to claim 1, characterized in that: A two-dimensional material film is formed on the surface of the substrate by a growth or transfer method on the substrate.

5. The method for preparing a (012) oriented bismuth metal film according to claim 4, characterized in that: The method for growing a two-dimensional material film on the substrate is chemical vapor deposition.

6. The method for preparing a (012) oriented bismuth metal film according to claim 1, characterized in that: The thickness of the (012) crystal plane oriented bismuth metal film prepared by the preparation method is 5-1000nm.

7. The method for preparing a (012) oriented bismuth metal film according to claim 1, characterized in that: The steps of depositing bismuth on the two-dimensional material film by electron beam coating technology to obtain the (012) oriented bismuth metal film are specifically as follows: placing the substrate with the two-dimensional material film formed on the surface in an electron beam coating device, setting the parameters of the electron beam coating device, and -2 Under a vacuum degree of Pa, bismuth is deposited on the two-dimensional material film to obtain the bismuth metal film with (012) crystal plane orientation.

8. The method for preparing a (012) oriented bismuth metal film according to claim 5, characterized in that: The parameters of the electron beam coating device include: a deposition rate of 0.1-1 angstrom per second.

9. The method for preparing a (012) oriented bismuth metal film according to claim 1, characterized in that: The substrate is selected from silicon dioxide and aluminum oxide.

10. A bismuth metal film with (012) crystal plane orientation, characterized in that: The (012) crystal plane oriented bismuth metal film is prepared by the preparation method described in any one of claims 1 to 9.

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