RC-IGBT structure and semiconductor devices

Abstract

The present application discloses an RC-IGBT structure and a semiconductor device. The RC-IGBT structure includes: a substrate; a drift region of a first conductivity type; a collector region of a second conductivity type; a trench gate; a base region of a second conductivity type; a first emitter region of a first conductivity type; a second emitter region of a second conductivity type; a first anode region of a second conductivity type, arranged on the side of the drift region facing the second main surface; a second anode region of a first conductivity type, arranged on the side of the drift region facing the second main surface, with both sides of the second anode region in the horizontal direction and the side of the second anode region facing the first main surface both being in contact with the first anode region; a channel stop region of a first conductivity type, arranged on the side of the first anode region away from the trench gate; a planar gate, arranged on the second main surface and in contact with the first anode region and the second anode region; wherein the collector region is conductively connected to the first anode region and the second anode region through an external connecting line. According to the RC-IGBT structure and semiconductor device of the present application, the voltage rebound phenomenon can be effectively eliminated.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an RC-IGBT structure and a semiconductor device. Background Art

[0002] Power semiconductor devices play a key role in the field of power electronic conversion. As modern power systems continue to demand ever-increasing power density, efficiency, and reliability, traditional IGBT (Insulated Gate Bipolar Transistor) devices face numerous challenges. Consequently, the RC-IGBT (Reverse Conducting-Insulated Gate Bipolar Transistor) device has emerged as a new type of power semiconductor device. It integrates the IGBT and freewheeling diode on the same chip, significantly reducing chip area, lowering costs, and increasing power density compared to traditional IGBTs. Furthermore, during the shutdown process, the reverse recovery characteristics of the internal diode can be effectively utilized to suppress voltage spikes and reduce electromagnetic interference (EMI).

[0003] Existing RC-IGBT devices still have some technical problems, such as their inherent voltage rebound phenomenon.

[0004] Therefore, improvements are needed to at least partially solve the above problems. Summary of the Invention

[0005] The present invention aims to at least partially address the above-mentioned problems. To this end, one object of the present invention is to provide an RC-IGBT structure that eliminates voltage rebound. Another object of the present invention is to provide a semiconductor device having the RC-IGBT structure.

[0006] The RC-IGBT structure includes:

[0007] a substrate having a first main surface and a second main surface opposite to the first main surface, wherein the first main surface and the second main surface are spaced apart in a vertical direction;

[0008] a drift region of a first conductivity type, the drift region being provided between the first main surface and the second main surface;

[0009] a collector region of a second conductivity type, the collector region being provided on a side of the drift region facing the first main surface, and a side of the collector region away from the drift region constituting at least a portion of the first main surface;

[0010] a trench gate extending from the second main surface to the first main surface into the drift region;

[0011] a base region of the second conductivity type, the base region being provided on a side of the drift region facing the second main surface and located on both sides of the trench gate in a horizontal direction;

[0012] a first emitter region of a first conductivity type, the first emitter region being provided on a side of the base region facing the second main surface, and a side of the first emitter region away from the base region constituting a portion of the second main surface;

[0013] a second emitter region of a second conductivity type, the second emitter region being disposed on a side of the base region facing the second main surface and on a side of the first emitter region away from the trench gate, the side of the second emitter region away from the base region constituting a portion of the second main surface;

[0014] a first anode region of the second conductivity type, the first anode region being provided on a side of the drift region facing the second main surface, and a side of the first anode region away from the first main surface constituting a portion of the second main surface;

[0015] a second anode region of the first conductivity type, the second anode region being disposed on a side of the first anode region facing the second main surface, both sides of the second anode region in the horizontal direction and the side of the second anode region facing the first main surface being in contact with the first anode region, and a side of the second anode region away from the first main surface constituting a portion of the second main surface;

[0016] a channel stop region of a first conductivity type, the channel stop region being provided on a side of the first anode region away from the trench gate;

[0017] a planar grid, the planar grid being disposed on the second main surface and contacting the first anode region and the second anode region;

[0018] The collector region is conductively connected to the first anode region and the second anode region through external connection lines.

[0019] The above technical solution has the following advantages and beneficial effects: when the RC-IGBT structure is in the forward conduction state, a positive voltage is applied to the trench gate and a negative voltage is applied to the planar gate. At this time, an electron channel is generated under the trench gate and a hole channel is generated under the planar gate. Electrons and holes participate in the conduction process together. The RC-IGBT structure will not have a unipolar transport mode, eliminating the voltage rebound phenomenon.

[0020] In some embodiments, the trench gate and the planar gate are connected via an inverter.

[0021] The above technical solution has the following advantages and beneficial effects: it can realize the joint control of the trench gate and the planar gate, and when a positive voltage is applied to the trench gate, a negative voltage can be automatically applied to the planar gate through the inverter.

[0022] In some embodiments, the RC-IGBT structure further includes a first buffer region of a first conductivity type, the first buffer region being located between the drift region, the first anode region, and the channel stop region;

[0023] The doping concentration of the first buffer region is greater than the doping concentration of the drift region.

[0024] The above technical solution has the following advantages and beneficial effects: the provision of the first buffer zone can change the electric field distribution of the RC-IGBT structure, allowing the RC-IGBT structure to be turned off more quickly.

[0025] In some embodiments, the RC-IGBT structure further includes a carrier storage region of the first conductivity type, wherein the carrier storage region is located between the base region and the drift region;

[0026] The doping concentration of the carrier storage region is greater than the doping concentration of the drift region.

[0027] The above technical solution has the following advantages and beneficial effects: the provision of the carrier storage area can effectively improve the switching speed of the RC-IGBT structure and stabilize the working state of the RC-IGBT structure.

[0028] In some embodiments, the RC-IGBT structure further includes a terminal structure, wherein the terminal structure is at least partially located between the first anode region and the base region.

[0029] The above technical solution has the following advantages and beneficial effects: the setting of the terminal structure can effectively improve the withstand voltage of the RC-IGBT structure.

[0030] In some embodiments, the terminal structure includes at least one of a field plate, a field limiting ring, a JTE, and a VLD.

[0031] In some embodiments, the RC-IGBT structure further includes a second buffer zone of the first conductivity type, the second buffer zone being located between the drift region and the collector region;

[0032] The doping concentration of the second buffer region is greater than the doping concentration of the drift region.

[0033] The above technical solution has the following advantages and beneficial effects: the provision of the second buffer zone can effectively improve the withstand voltage of the RC-IGBT structure.

[0034] In some embodiments, the trench gate includes a gate trench extending from the second main surface to the first main surface to the drift region, a first gate dielectric layer located on an inner surface of the gate trench, and a first polysilicon gate located on a side of the first gate dielectric layer away from the inner surface of the gate trench;

[0035] The planar gate includes a second gate dielectric layer disposed on the second main surface and a second polysilicon gate located on a side of the second gate dielectric layer away from the second main surface. The second gate dielectric layer contacts the first anode region and the second anode region.

[0036] In some embodiments, the first conductivity type is N-type;

[0037] The second conductivity type is P type.

[0038] The semiconductor device includes the RC-IGBT structure described above.

[0039] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The following drawings of this application are hereby incorporated as part of this application for understanding this application. The drawings show the embodiments of this application and their descriptions, and are used to explain the device and principle of this application. In the drawings,

[0041] Figure 1 FIG. 1 is a schematic diagram of an RC-IGBT structure according to an embodiment of the present application.

[0042] Description of reference numerals:

[0043] 100 - substrate, 101 - first main surface, 102 - second main surface, 110 - drift region, 111 - collector region, 112 - trench gate, 113 - base region, 114 - first emitter region, 115 - second emitter region, 116 - first anode region, 117 - second anode region, 118 - channel stop region, 119 - planar gate, 120 - first buffer region, 121 - carrier storage region, 122 - terminal structure, 123 - second buffer region;

[0044] 200-External connection line. DETAILED DESCRIPTION

[0045] In the following description, a large number of specific details are provided to provide a more thorough understanding of the present application. However, it will be apparent to those skilled in the art that the present application can be implemented without one or more of these details. In other examples, some technical features well known in the art are not described in order to avoid confusion with the present application.

[0046] It should be understood that the present application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to make the disclosure thorough and complete and to fully convey the scope of the present application to those skilled in the art. In the drawings, the dimensions and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals throughout represent like elements.

[0047] It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of this application, the first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part.

[0048] Spatially relative terms, such as "below," "beneath," "beneath," "above," "upper," etc., may be used herein for convenience to describe the relationship of one element or feature to other elements or features illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientations depicted in the figures.

[0049] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present application. When used herein, the singular forms "a", "an", and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0050] Embodiments of the invention are described herein with reference to cross-sectional views that are schematic diagrams of ideal embodiments (and intermediate structures) of the present application. Thus, variations in the shapes shown due to, for example, manufacturing techniques and / or tolerances can be expected. Therefore, the embodiments of the present application should not be limited to the specific shapes shown herein, but rather include shape deviations due to, for example, manufacturing. Therefore, what is shown in the figures is schematic in nature, and their shapes are not intended to show the actual shape of the device and are not intended to limit the scope of the present application.

[0051] Refer to the attached Figure 1The RC-IGBT structure according to one embodiment of the present application is exemplarily described. In the following description, N and P represent the conductivity type of the semiconductor. In this embodiment, the first conductivity type is set to N type and the second conductivity type is set to P type.

[0052] The RC-IGBT structure includes: a substrate 100, a drift region 110 of the first conductivity type, a collector region 111 of the second conductivity type, a trench gate 112, a base region 113 of the second conductivity type, a first emitter region 114 of the first conductivity type, a second emitter region 115 of the second conductivity type, a first anode region 116 of the second conductivity type, a second anode region 117 of the first conductivity type, a channel stop region 118 of the first conductivity type and a planar gate 119.

[0053] The base 100 has a first main surface 101 and a second main surface 102 opposite to the first main surface 101 . The first main surface 101 and the second main surface 102 are spaced apart in the vertical direction.

[0054] The drift region 110 of the first conductivity type is provided between the first main surface 101 and the second main surface 102. The drift region 110110 generally has a relatively low doping concentration, and thus has a relatively high resistance and can withstand a relatively high voltage.

[0055] The collector region 111 of the second conductivity type is provided on the side of the drift region 110 facing the first main surface 101. The side of the collector region 111 away from the drift region 110 constitutes at least part of the first main surface 101. For example, a collector metal connected to the collector region 111 may be provided on the first main surface 101.

[0056] The trench gate 112 extends from the second main surface 102 toward the first main surface 101 into the drift region 110. In this embodiment, the trench gate 112 includes a gate trench extending from the second main surface 102 toward the first main surface 101 into the drift region 110, a first gate dielectric layer located on the inner surface of the gate trench, and a first polysilicon gate located on a side of the first gate dielectric layer away from the inner surface of the gate trench. The first polysilicon gate is an active gate, that is, the first polysilicon gate is connected to an external drive signal source, and its potential is directly controlled by the external drive signal.

[0057] A base region 113 of the second conductivity type is disposed on the side of the drift region 110 facing the second main surface 102 and on both sides of the trench gate 112 in the horizontal direction. The base region 113 may also be referred to as a body region. For example, the side of the base region 113 away from the first main surface 101 may constitute a portion of the second main surface 102.

[0058] The first emitter region 114 of the first conductivity type is provided on the side of the base region 113 facing the second main surface 102 , and the side of the first emitter region 114 away from the first main surface 101 constitutes part of the second main surface 102 . The doping concentration of the first emitter region 114 is higher than that of the drift region 110 .

[0059] A second emitter region 115 of the second conductivity type is provided on the side of the base region 113 facing the second main surface 102 and on the side of the first emitter region 114 away from the trench gate 112. The side of the second emitter region 115 away from the first main surface 101 constitutes part of the second main surface 102. That is, horizontally, the first emitter region 114 is located between the trench gate 112 and the second emitter region 115, and the first emitter region 114 contacts the trench gate 112 and the second emitter region 115 on both sides of the horizontal direction. The doping concentration of the second emitter region 115 is higher than the doping concentration of the base region 113.

[0060] A first anode region 116 of the second conductivity type is provided on a side of the drift region 110 facing the second main surface 102 , and a side of the first anode region 116 away from the first main surface 101 constitutes a portion of the second main surface 102 .

[0061] A second anode region 117 of the first conductivity type is provided on a side of the first anode region 116 facing the second main surface 102. Both sides of the second anode region 117 in the horizontal direction and the side of the second anode region 117 facing the first main surface 101 are in contact with the first anode region 116. A side of the second anode region 117 away from the first main surface 101 constitutes a portion of the second main surface 102. The doping concentration of the second anode region 117 is higher than the doping concentration of the drift region 110.

[0062] A channel stop region 118 of the first conductivity type is provided on a side of the first anode region 116 away from the trench gate 112. The side of the channel stop region 118 away from the first main surface 101 constitutes a portion of the second main surface 102. Horizontally, the side of the channel stop region 118 facing the first anode region 116 contacts the first anode region 116. The doping concentration of the channel stop region 118 is higher than the doping concentration of the drift region 110.

[0063] The planar gate 119 is disposed on the second main surface 102 and contacts the first anode region 116 and the second anode region 117. In this embodiment, the planar gate 119 includes a second gate dielectric layer disposed on the second main surface 102 and a second polysilicon gate located on a side of the second gate dielectric layer away from the second main surface 102. The second gate dielectric layer contacts the first anode region 116 and the second anode region 117.

[0064] The collector region 111 is electrically connected to the first anode region 116 and the second anode region 117 via external connecting wires 200. It should be noted that the external connecting wires 200 referred to herein are external connection lines to the substrate 100 and may include conductive connection components such as metal layers, metal pillars, and wires. The planar gate 119, the first anode region 116, the second anode region 117, and the channel stop region 118 collectively constitute the front anode structure.

[0065] When the RC-IGBT structure according to this embodiment is in a blocking state, a positive voltage is applied to the collector region 111, and no voltage is applied to the trench gate 112 (i.e., the first polysilicon gate) and the planar gate 119 (i.e., the second polysilicon gate). The voltages at the trench gate 112 and the planar gate 119 are both 0, and no conductive channel is generated.

[0066] When the RC-IGBT structure according to this embodiment is in the forward conduction state, a positive voltage is applied to the collector region 111 and the trench gate 112 (i.e., the first polysilicon gate), and a negative voltage is applied to the planar gate 119 (i.e., the second polysilicon gate). At this time, an electron channel is generated under the trench gate 112, and a hole channel is generated under the planar gate 119. Electrons and holes participate in the conduction process together, and the RC-IGBT structure does not exhibit a unipolar transport mode, thereby effectively eliminating the voltage rebound phenomenon. At the same time, both the collector region 111 and the anode region inject holes into the drift region 110. At the same time, the hole channel under the planar gate 119 can also increase the hole injection efficiency of the anode region. At this time, the conductivity modulation effect in the drift region 110 is greatly enhanced compared to the traditional IGBT structure, which can effectively increase the current density of the RC-IGBT structure and make the RC-IGBT structure have a smaller conduction voltage drop.

[0067] When the RC-IGBT structure according to this embodiment is in the off state and reverse conduction state, a negative voltage is applied to the trench gate 112 (i.e., the first polysilicon gate) and a positive voltage is applied to the planar gate 119 (i.e., the second polysilicon gate). At this time, a hole channel and an electron channel are induced under the trench gate 112 and the planar gate 119, respectively. This provides an electron and hole extraction channel in the off state, accelerating the extraction of electrons and holes and reducing turn-off losses. In the reverse conduction state, the electron channel formed under the planar gate 119 provides a path for the freewheeling diode.

[0068] In some embodiments, the trench gate 112 (i.e., the first polysilicon gate) and the planar gate 119 (i.e., the second polysilicon gate) are connected via an inverter. The inverter is used to invert the phase of the input signal by 180°. Assuming that the trench gate 112 receives a positive voltage signal, after passing through the inverter, a negative voltage signal is transmitted to the planar gate 119, and vice versa. This ensures that the control signals of the trench gate 112 and the planar gate 119 are always in opposite logical states. By setting the inverter, the trench gate 112 and the planar gate 119 can be jointly controlled. When a positive voltage is applied to the trench gate 112, a negative voltage can be automatically applied to the planar gate 119 through the inverter.

[0069] In this embodiment, the RC-IGBT structure further includes a first buffer region 120 of the first conductivity type, located between the drift region 110 and the first anode region 116 and the channel stop region 118. The doping concentration of the first buffer region 120 is greater than the doping concentration of the drift region 110. The side of the first buffer region 120 away from the first main surface 101 can constitute a portion of the second main surface 102. The planar gate 119 (i.e., the second gate dielectric layer in the planar gate 119) is in contact with the first buffer region 120. The provision of the first buffer region 120 can change the electric field distribution of the RC-IGBT structure, allowing the RC-IGBT structure to be turned off more quickly. In some embodiments, the first buffer region 120 may not be provided between the drift region 110 and the first anode region 116 and the channel stop region 118; the drift region 110 is in direct contact with the first anode region 116 and the channel stop region 118.

[0070] In this embodiment, the RC-IGBT structure further includes a carrier storage region 121 of the first conductivity type, located between the base region 113 and the drift region 110. The doping concentration of the carrier storage region 121 is greater than that of the drift region 110. The side of the carrier storage region 121 facing away from the first main surface 101 can constitute a portion of the second main surface 102. Horizontally, the side of the carrier storage region 121 facing the trench gate 112 is in contact with the trench gate 112. The provision of the carrier storage region 121 can effectively improve the switching speed of the RC-IGBT structure and stabilize its operating state. This prevents the RC-IGBT structure from generating excessive voltage spikes or current surges due to rapid changes in carriers, reduces switching losses, and enables the RC-IGBT structure to transition between the on and off states more quickly and stably. The carrier storage region 121 can also enhance the withstand voltage capability of the RC-IGBT structure. It can help the drift region 110 withstand higher reverse voltages and prevent the RC-IGBT structure from being broken down. In some embodiments, the carrier storage region 121 may not be disposed between the base region 113 and the drift region 110 , and the base region 113 may directly contact the drift region 110 .

[0071] In some embodiments, the RC-IGBT structure further includes a terminal structure 122, which is at least partially located between the first anode region 116 and the base region 113. Furthermore, the terminal structure 122 may be located between the first buffer region 120 and the carrier storage region 121. It should be noted that the term "located between the first anode region 116 and the base region 113" (or between the first buffer region 120 and the carrier storage region 121) herein refers to a position horizontally located therebetween. The terminal structure 122 may be located within the substrate 100, outside the substrate 100, or partially within and partially outside the substrate 100, and this is not specifically limited in this application. The provision of the terminal structure 122 can effectively improve the withstand voltage of the RC-IGBT structure.

[0072] For example, the terminal structure 122 may include at least one of a field plate, a field limiting ring, a junction termination extension (JTE), and a variation of lateral doping (VLD). Field plates, field limiting rings, JTEs, and VLDs are all well-known structures to those skilled in the art and will not be described in detail here.

[0073] In this embodiment, the RC-IGBT structure further includes a second buffer region 123 of the first conductivity type. The second buffer region 123 is located between the drift region 110 and the collector region 111. The doping concentration of the second buffer region 123 is greater than that of the drift region 110. The second buffer region 123 vertically contacts the drift region 110 and the collector region 111 on either side. The second buffer region 123 can also be referred to as a field stop region. The primary function of the second buffer region 123 is to terminate the electric field when the RC-IGBT structure is in the off state, preventing the electric field from penetrating into the collector region 111, thereby improving the withstand voltage capability. When a high voltage is applied, the second buffer region 123 can withstand a portion of the electric field, gradually weakening it before reaching the collector region 111, thereby preventing breakdown in the collector region 111. The second buffer region 123 can also reduce the duration and amplitude of tail current by adjusting carrier distribution and extraction speed. Reducing tail current helps reduce turn-off losses. In some embodiments, the second buffer region 123 may not be provided between the drift region 110 and the collector region 111.

[0074] The present application also provides a semiconductor device, which includes the RC-IGBT structure described above.

[0075] Although example embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above example embodiments are merely illustrative and are not intended to limit the scope of the present application. Various changes and modifications may be made therein by those skilled in the art without departing from the scope and spirit of the present application. All such changes and modifications are intended to be included within the scope of the present application as required by the appended claims.

[0076] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of the units described is merely a logical function division. In actual implementation, other division methods may be used, such as combining or integrating multiple units or components into another device, or ignoring or not performing some features.

[0077] In the description provided herein, a large number of specific details are described. However, it is understood that the embodiments of the present application can be practiced without these specific details. In some instances, well-known methods, structures, and techniques are not shown in detail so as not to obscure the understanding of this description.

[0078] Similarly, it should be understood that in order to streamline the present application and aid in understanding one or more of the various inventive aspects, in the description of the exemplary embodiments of the present application, the various features of the present application are sometimes grouped together into a single embodiment, figure, or description thereof. However, this approach of the present application should not be interpreted as reflecting the intention that the application claimed for protection requires more features than those explicitly recited in each claim. More precisely, as reflected in the corresponding claims, the inventive point is that the corresponding technical problem can be solved with fewer features than all the features of a single disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into the detailed description, with each claim itself serving as a separate embodiment of the present application.

[0079] Those skilled in the art will understand that, except where mutually exclusive, all features disclosed in this specification (including the accompanying claims, abstract, and drawings) and all processes or units of any method or apparatus disclosed herein may be combined in any combination. Unless expressly stated otherwise, each feature disclosed in this specification (including the accompanying claims, abstract, and drawings) may be replaced by an alternative feature that provides the same, equivalent, or similar purpose.

[0080] Furthermore, those skilled in the art will appreciate that although some embodiments described herein include certain features included in other embodiments but not other features, combinations of features from different embodiments are intended to be within the scope of this application and to form different embodiments. For example, in the claims, any of the claimed embodiments may be used in any combination.

[0081] It should be noted that the above-mentioned embodiments illustrate rather than limit the invention and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims.

Claims

1. An RC-IGBT structure, characterized in that: include: a substrate having a first main surface and a second main surface opposite to the first main surface, wherein the first main surface and the second main surface are spaced apart in a vertical direction; a drift region of a first conductivity type, the drift region being provided between the first main surface and the second main surface; a collector region of a second conductivity type, the collector region being provided on a side of the drift region facing the first main surface, and a side of the collector region away from the drift region constituting at least a portion of the first main surface; a trench gate extending from the second main surface to the first main surface into the drift region; a base region of the second conductivity type, the base region being provided on a side of the drift region facing the second main surface and located on both sides of the trench gate in a horizontal direction; a first emitter region of a first conductivity type, the first emitter region being provided on a side of the base region facing the second main surface, and a side of the first emitter region away from the base region constituting a portion of the second main surface; a second emitter region of a second conductivity type, the second emitter region being disposed on a side of the base region facing the second main surface and on a side of the first emitter region away from the trench gate, the side of the second emitter region away from the base region constituting a portion of the second main surface; a first anode region of the second conductivity type, the first anode region being provided on a side of the drift region facing the second main surface, and a side of the first anode region away from the first main surface constituting a portion of the second main surface; a second anode region of the first conductivity type, the second anode region being disposed on a side of the first anode region facing the second main surface, both sides of the second anode region in the horizontal direction and the side of the second anode region facing the first main surface being in contact with the first anode region, and a side of the second anode region away from the first main surface constituting a portion of the second main surface; a channel stop region of a first conductivity type, the channel stop region being provided on a side of the first anode region away from the trench gate; a planar gate, the planar gate being disposed on the second main surface and contacting the first anode region and the second anode region, wherein a side of the channel stop region away from the first main surface constitutes a portion of the second main surface; The collector region is conductively connected to the first anode region and the second anode region through external connection lines.

2. The RC-IGBT structure according to claim 1, characterized in that: The trench gate and the planar gate are connected via an inverter.

3. The RC-IGBT structure according to claim 1, characterized in that: The RC-IGBT structure further includes a first buffer region of a first conductivity type, the first buffer region being located between the drift region, the first anode region, and the channel stop region; The doping concentration of the first buffer region is greater than the doping concentration of the drift region.

4. The RC-IGBT structure according to claim 1, characterized in that: The RC-IGBT structure further includes a carrier storage region of a first conductivity type, wherein the carrier storage region is located between the base region and the drift region; The doping concentration of the carrier storage region is greater than the doping concentration of the drift region.

5. The RC-IGBT structure according to claim 1, characterized in that: The RC-IGBT structure further includes a terminal structure located at least partially between the first anode region and the base region.

6. The RC-IGBT structure according to claim 5, characterized in that: The terminal structure includes at least one of a field plate, a field limiting ring, a JTE and a VLD.

7. The RC-IGBT structure according to claim 1, characterized in that: The RC-IGBT structure further includes a second buffer zone of the first conductivity type, the second buffer zone being located between the drift region and the collector region; The doping concentration of the second buffer region is greater than the doping concentration of the drift region.

8. The RC-IGBT structure according to claim 1, characterized in that: The trench gate includes a gate trench extending from the second main surface to the first main surface to the drift region, a first gate dielectric layer located on the inner surface of the gate trench, and a first polysilicon gate located on a side of the first gate dielectric layer away from the inner surface of the gate trench; The planar gate includes a second gate dielectric layer disposed on the second main surface and a second polysilicon gate located on a side of the second gate dielectric layer away from the second main surface. The second gate dielectric layer contacts the first anode region and the second anode region.

9. The RC-IGBT structure according to any one of claims 1 to 8, characterized in that: The first conductivity type is N type; The second conductivity type is P type.

10. A semiconductor device, characterized in that: The invention comprises the RC-IGBT structure according to any one of claims 1 to 9.

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