Display panel, preparation method thereof and display device

Abstract

The invention discloses a display panel, a preparation method thereof and a display device. The display panel comprises a driving substrate and a light emitting diode. The light emitting diode is arranged on the driving substrate; the display panel comprises a light-emitting surface, a first reflecting layer and a first insulating protective layer are arranged on the side, away from the light-emitting surface, of the light-emitting diode, and the first insulating protective layer is arranged on the surface of the first reflecting layer. The first reflecting layer is arranged on the side, away from the light-emitting face, of the light-emitting diode, emergent light of the light-emitting diode is reflected to the light-emitting face, and the light extraction rate of the light-emitting diode is increased; the first insulating protection layer is arranged on the surface of the first reflecting layer to protect the first reflecting layer and prevent water and oxygen from eroding the first reflecting layer.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a method for preparing the same, and a display device. Background Art

[0002] With the development of technology, higher requirements are put forward for lighting and display technology. Micro-LED has broad market application prospects due to its micron-sized size, self-luminescence, fast response speed and low power consumption.

[0003] Among them, the light extraction rate of Micro-LED affects the performance of the display panel. Summary of the invention

[0004] The present application provides a display panel, a method for manufacturing the same, and a display device to improve light extraction efficiency.

[0005] In order to solve the above technical problems, the first technical solution provided in the present application is: providing a display panel, including a driving substrate and a light-emitting diode; the light-emitting diode is arranged on the driving substrate; wherein the display panel includes a light-emitting surface, and the side of the light-emitting diode away from the light-emitting surface is provided with a first reflective layer and a first insulating protective layer; the first insulating protective layer is arranged on the surface of the first reflective layer.

[0006] In one embodiment, the first insulating protection layer is disposed on a surface of the first reflective layer close to the light emitting diode and a surface of the first reflective layer far from the light emitting diode.

[0007] In one embodiment, the first reflective layer is arranged on a side of the light-emitting diode where the first electrode and the second electrode are arranged; preferably, the first reflective layer is arranged between the first electrode and the second electrode, and the first reflective layer is arranged with an interval between the first electrode and the second electrode; preferably, the light-emitting diode comprises a substrate, a first semiconductor layer, a multi-quantum well layer, and a second semiconductor layer which are stacked in sequence, and the light-emitting diode further comprises a first electrode and a second electrode, the first electrode is electrically connected to the first semiconductor layer, the second electrode is electrically connected to the second semiconductor layer, and the first electrode and the second electrode are electrically connected to the pad of the driving substrate through solder; the first reflective layer is arranged on a side of the second semiconductor layer away from the multi-quantum well layer, and the first insulating protective layer is provided on a surface of the first reflective layer close to the second semiconductor layer, a surface of the first reflective layer close to the second semiconductor layer, a side of the first reflective layer close to the first electrode, and a side of the first reflective layer close to the second electrode.

[0008] In one embodiment, the display panel further includes a barrier layer, the barrier layer is formed with an opening, and the light-emitting diode is arranged in the opening; a second reflective layer is provided on the hole wall of the opening, and a second insulating protective layer is provided on the surface of the second reflective layer; preferably, the display panel further includes an encapsulation layer, the encapsulation layer is located on the side of the barrier layer and the light-emitting diode away from the driving substrate, and the barrier layer is bonded to the encapsulation layer; preferably, the encapsulation layer is a cover plate, and / or the material of the barrier layer includes vinyl.

[0009] In one embodiment, the surface of the second reflective layer close to the light emitting diode is an inclined surface, and the opening area formed by the second reflective layer gradually increases along the light emitting direction of the display panel; preferably, the hole wall of the opening is an inclined surface, and the opening area of ​​the opening gradually increases along the light emitting direction of the display panel; the thickness of the reflective layer at each location of the hole wall of the opening is consistent; preferably, the surface of the reflective layer close to the light emitting diode is an inclined plane; preferably, the reflective layer covers the entire hole wall of the opening; preferably, the light emitting direction of the display panel is the direction from the drive substrate to the packaging layer.

[0010] In one embodiment, the first reflective layer is a mirror reflective layer; and / or the material of the first reflective layer includes metal; and / or the material of the first insulating protective layer includes SiO x and SiN x At least one of; and / or the second reflective layer is a specular reflective layer; and / or the material of the second reflective layer includes metal; and / or the material of the second insulating protective layer includes SiO x and SiN x At least one of; preferably, the first reflection layer is a silver mirror reflection layer; and / or the second reflection layer is a silver mirror reflection layer.

[0011] In order to solve the above technical problem, the second technical solution provided in the present application is: to provide a display device, comprising any of the display panels described above.

[0012] In order to solve the above technical problems, the third technical solution provided in the present application is: a method for preparing a display panel is provided, comprising: providing a driving substrate; forming a light-emitting diode on the driving substrate and forming a first reflective layer and a first insulating protective layer on the side of the light-emitting diode away from the light-emitting surface of the display panel, wherein the first insulating protective layer is formed on the surface of the first reflective layer.

[0013] In one embodiment, the steps of forming a light-emitting diode on the driving substrate and forming a first reflective layer and a first insulating protective layer on a side of the light-emitting diode away from the light-emitting surface of the display panel specifically include: providing a substrate; sequentially forming a first semiconductor layer, a multi-quantum well layer, and a second semiconductor layer on the substrate; forming a first insulating protective layer on a surface of the second semiconductor layer away from the multi-quantum well layer, and etching the first insulating protective layer to expose an electrode region; sequentially forming the first reflective layer and another first insulating protective layer on a surface of the first insulating protective layer away from the second semiconductor layer; depositing metal in the electrode region and etching to form a first electrode and a second electrode, the first electrode being electrically connected to the first semiconductor layer, the second electrode being electrically connected to the second semiconductor layer, and the first electrode and the second electrode being spaced apart from the first reflective layer.

[0014] In one embodiment, the preparation method further includes: providing a cover plate, forming a barrier layer with an opening on the cover plate; forming a second reflective layer and a second insulating protection layer on the hole wall of the opening in sequence; aligning and bonding the cover plate to the driving substrate so that the light-emitting diode is embedded in the opening.

[0015] Beneficial effects of the present application: Different from the prior art, the present application discloses a display panel and a method for manufacturing the same, and a display device; the display panel includes a driving substrate and a light-emitting diode; the light-emitting diode is arranged on the driving substrate; wherein the display panel includes a light-emitting surface, and a first reflection layer and a first insulating protection layer are arranged on the side of the light-emitting diode away from the light-emitting surface, and the first insulating protection layer is arranged on the surface of the first reflection layer. By arranging the first reflection layer on the side of the light-emitting diode away from the light-emitting surface, the emitted light of the light-emitting diode is reflected to the light-emitting surface, thereby improving the light extraction rate of the light-emitting diode; a first insulating protection layer is arranged on the surface of the first reflection layer to protect the first reflection layer and prevent the first reflection layer from being corroded by water and oxygen. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0017] Figure 1 is a schematic diagram of the structure of a display panel provided in an embodiment of the present application;

[0018] Figure 2 yes Figure 1 A schematic diagram of the structure of the light emitting diode of the display panel shown;

[0019] Figure 3 yes Figure 2 A schematic diagram of the combined structure of the light emitting diode, the first reflective layer and the first insulating protective layer shown;

[0020] Figure 4 is a schematic flow chart of a method for preparing a display panel provided in the first embodiment of the present application;

[0021] Figure 5 yes Figure 4 The structural diagram of step S02 shown;

[0022] Figure 6 is a schematic flow chart of a method for manufacturing a display panel provided in a second embodiment of the present application;

[0023] Figure 7 yes Figure 6 The structural diagram of step S03 shown;

[0024] Figure 8 yes Figure 7 The schematic diagram of the top view of step S03 is shown;

[0025] Fig. 9 yes Figure 6 The structural diagram of step S04 shown;

[0026] Fig.10 yes Figure 6 The structural diagram of step S05 is shown. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0028] In the following description, for the purpose of explanation rather than limitation, specific details such as specific system structures, interfaces, and technologies are provided to facilitate a thorough understanding of the present application.

[0029] The terms "first", "second", and "third" in this application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first", "second", and "third" can explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. All directional indications in the embodiments of this application (such as up, down, left, right, front, back...) are only used to explain the relative position relationship, movement, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication also changes accordingly. The terms "including" and "having" in the embodiments of this application and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units that are not listed, or optionally also includes other steps or components inherent to these processes, methods, products, or devices.

[0030] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0031] The present application is described in detail below with reference to the accompanying drawings and embodiments.

[0032] See also Figure 1-Figure 3 , Figure 1 is a schematic diagram of the structure of a display panel provided in an embodiment of the present application, Figure 2 yes Figure 1 The schematic diagram of the structure of the light emitting diode of the display panel shown in FIG. Figure 3 yes Figure 2 The schematic diagram of the combined structure of the light emitting diode, the first reflective layer and the first insulating protective layer is shown.

[0033] The embodiment of the present application provides a display panel, which includes a driving substrate 11 and a light-emitting diode 13. The light-emitting diode 13 is arranged on the driving substrate 11. The light-emitting diode 13 is electrically connected to the driving substrate 11. The display panel includes a light-emitting surface (not marked in the figure), and a first reflective layer 15 and a first insulating protective layer 16 are provided on the side of the light-emitting diode 13 facing away from the light-emitting surface, and the first insulating protective layer 16 is provided on the surface of the first reflective layer 15. It should be noted that the specific structure and function of the driving substrate 11 can be referred to the prior art and will not be repeated here. The light-emitting diode 13 can be an LED, a Micro-LED, or a Mini-LED.

[0034] Since the light emitted by the LED 13 is emitted randomly in all directions, a first reflective layer 15 is provided on the side of the LED 13 away from the light emitting surface, so that the light emitted from the bottom surface of the LED 13 (the bottom surface of the LED 13 is the surface of the LED 13 away from the light emitting surface of the display panel) can be reflected to the light emitting surface, and the light emitted by the LED 13 is emitted from the light emitting surface as much as possible, thereby improving the light extraction rate of the LED 13 and further improving the brightness of the display panel. The first insulating protective layer 16 has good transmittance; the first insulating protective layer 16 is provided on the surface of the first reflective layer 15 to protect the first reflective layer 15 and prevent the first reflective layer 15 from being corroded by water and oxygen. The first reflective layer 15 always maintains a good reflection effect, which is conducive to improving the performance consistency of the display panel.

[0035] The light emitting diode 13 includes a substrate 131, a first semiconductor layer 132, a multi-quantum well layer 133, and a second semiconductor layer 134, which are stacked in sequence. The light emitting diode 13 also includes a first electrode 135 and a second electrode 136, the first electrode 135 is electrically connected to the first semiconductor layer 132, the second electrode 136 is electrically connected to the second semiconductor layer 134, and the first electrode 135 and the second electrode 136 are electrically connected to the pad of the driving substrate 11 through solder. Optionally, the material of the substrate 131 includes sapphire; and / or, the material of the first semiconductor layer 132 includes N-GaN; and / or, the material of the second semiconductor layer 134 includes P-GaN.

[0036] In one embodiment, the first insulating protective layer 16 is provided on both the surface of the first reflective layer 15 close to the light emitting diode 13 and the surface of the first reflective layer 15 far from the light emitting diode 13. By providing the first insulating protective layer 16 on the surface of the first reflective layer 15 close to the light emitting diode 13, the first reflective layer 15 and the light emitting diode 13 are prevented from short-circuiting and failing; and the first insulating protective layer 16 is provided on the surface of the first reflective layer 15 far from the light emitting diode 13 to protect the first reflective layer 15 from corrosion by water and oxygen.

[0037] Optionally, the light emitting diode 13 is a flip-chip structure, and the first reflective layer 15 is arranged on the side of the second semiconductor layer 134 away from the multi-quantum well layer 133. The first reflective layer 15 can reflect the light emitted by the multi-quantum well layer 133 to the substrate 131, and the light emitted by the multi-quantum well layer 133 is emitted from the substrate 131. The surface of the first reflective layer 15 away from the second semiconductor layer and the surface of the first reflective layer 15 close to the second semiconductor layer 134 are both provided with a first insulating protective layer 16; when the material of the first reflective layer 15 includes metal (for example, silver), by providing the first insulating protective layer 16 on the surface of the first reflective layer 15 close to the second semiconductor layer 134, the first reflective layer 15 and the second semiconductor layer 134 are prevented from short-circuiting and failing; by providing the first insulating protective layer 16 on the surface of the first reflective layer 15 away from the second semiconductor layer 134, the first reflective layer 15 is protected from corrosion by water and oxygen.

[0038] In one embodiment, the first reflective layer 15 is disposed on a side of the light emitting diode 13 where the first electrode 135 and the second electrode 136 are disposed.

[0039] Optionally, the light-emitting diode 13 is a flip-chip structure; by setting a first reflective layer 15 on the side of the light-emitting diode 13 where the first electrode 135 and the second electrode 136 are provided, the first reflective layer 15 reflects the light emitted by the multi-quantum well layer 133 and reflects it to the substrate 131, and the light emitted by the multi-quantum well layer 133 is emitted from the substrate 131.

[0040] Optionally, the first reflective layer 15 is disposed between the first electrode 135 and the second electrode 136, and the first reflective layer 15 is spaced apart from the first electrode 135 and the second electrode 136. When the material of the first reflective layer 15 includes metal (e.g., silver), by spacing the first reflective layer 15 and the first electrode 135 and the second electrode 136, short circuit between the first reflective layer 15 and the first electrode 135 and the second electrode 136 is avoided to cause device failure.

[0041] Optionally, when the material of the first reflective layer 15 includes metal (for example, silver), a first insulating protective layer 16 is also provided on the side of the first reflective layer 15 close to the first electrode 135 and the side of the first reflective layer 15 close to the second electrode 136 to prevent the first reflective layer 15 from being short-circuited with the first electrode 135 and the second electrode 136. Preferably, the first insulating protective layer 16 completely covers the first reflective layer 15.

[0042] In one embodiment, the first reflective layer 15 is a mirror reflective layer, which is beneficial to reflect as much light emitted from the bottom surface of the light emitting diode 13 as possible to the light emitting surface, thereby reducing light loss.

[0043] In one embodiment, the material of the first reflective layer 15 includes metal, which has good reflective properties. Optionally, the material of the first reflective layer 15 includes silver, which has good reflective properties. Exemplarily, the first reflective layer 15 is a silver mirror reflective layer.

[0044] In one embodiment, the first insulating protection layer 16 completely covers the first reflective layer 15 to protect the first reflective layer 15 from corrosion by water and oxygen.

[0045] In one embodiment, the material of the first insulating protection layer 16 includes SiO x and SiN x At least one of SiO x and SiN x Both have good light transmittance and have limited influence on the first reflective layer 15 reflecting the emitted light emitted by the light emitting diode 13 .

[0046] Continue reading Figure 1 The display panel further includes an encapsulation layer 12 and a barrier layer 14. The encapsulation layer 12 is arranged opposite to the driving substrate 11; optionally, the encapsulation layer 12 is arranged opposite to and parallel to the driving substrate 11. The light-emitting diode 13 and the barrier layer 14 are both located between the driving substrate 11 and the encapsulation layer 12; in other words, the encapsulation layer 12 is located on the side of the barrier layer 14 and the light-emitting diode 13 away from the driving substrate 11. The barrier layer 14 is formed with an opening 141, and the light-emitting diode 13 is arranged in the opening 141.

[0047] The barrier layer 14 is bonded to the encapsulation layer 12. The display panel includes a plurality of light-emitting diodes 13, and a plurality of openings 141 are formed on the barrier layer 14. The plurality of light-emitting diodes 13 are arranged in a one-to-one correspondence with the plurality of openings 141, and one light-emitting diode 13 is contained in one opening 141. The thickness of the barrier layer 14 is greater than or equal to the height of the light-emitting diode 13; wherein, the thickness of the barrier layer 14 is the dimension of the barrier layer 14 along the direction from the drive substrate 11 to the encapsulation layer 12, and the height of the light-emitting diode 13 is the dimension of the light-emitting diode 13 along the direction from the drive substrate 11 to the encapsulation layer 12. In other words, a barrier layer 14 is provided between any two adjacent light-emitting diodes 13, and the barrier layer 14 separates the two adjacent light-emitting diodes 13, and the barrier layer 14 prevents the emitted light of the two adjacent light-emitting diodes 13 from crosstalking with each other.

[0048] In one embodiment, a second reflective layer 1411 is disposed on the hole wall of the opening 141 , and a second insulating protection layer 1412 is disposed on the surface of the second reflective layer 1411 .

[0049] Since the light emitted by the light emitting diode 13 is randomly emitted in all directions, a second reflective layer 1411 is provided on the hole wall of the opening 141, which is equivalent to providing a second reflective layer 1411 on the circumferential side of the light emitting diode 13, reflecting the light emitted from the side of the light emitting diode 13 to the light emitting surface, thereby improving the light extraction rate of the light emitting diode 13 and further avoiding light crosstalk between two adjacent light emitting diodes 13. By improving the light extraction rate of the light emitting diode 13, the brightness of the display panel can be improved.

[0050] The light-emitting diode 13 can be an LED, a Micro-LED, or a Mini-LED. The smaller the size of the light-emitting diode 13, the smaller the surface area of ​​the light-emitting diode 13 facing the light-emitting surface of the display panel, the larger the side area of ​​the light-emitting diode 13, and the larger the proportion of light emitted from the side of the light-emitting diode 13, which may cause the problem of low light extraction efficiency of the light-emitting diode 13. By providing a second reflective layer 1411 on the hole wall of the opening 141, the problem of low light extraction efficiency when the size of the light-emitting diode 13 is small is solved.

[0051] The light-emitting diode 13 is arranged in the opening 141. When the material of the second reflective layer 1411 includes metal, a second insulating protective layer 1412 is provided on the surface of the second reflective layer 1411 on the hole wall of the opening 141. This can also be used to prevent the second reflective layer 1411 from being short-circuited with the first electrode 135 and / or the second electrode 136 and / or the solder and / or the pad, thereby avoiding device failure.

[0052] The second insulating protective layer 1412 has good permeability; the second insulating protective layer 1412 is used to protect the second reflective layer 1411 to prevent water and oxygen from corroding the second reflective layer 1411. The second reflective layer 1411 always maintains a good reflection effect, which is beneficial to improving the performance consistency of the display panel.

[0053] In one embodiment, the second reflective layer 1411 covers the entire wall of the opening 141 , and reflects the light emitted from the entire side surface of the light emitting diode 13 .

[0054] In one embodiment, the surface of the second reflective layer 1411 close to the light-emitting diode 13 is an inclined surface; and along the light-emitting direction of the display panel, the opening area formed by the second reflective layer 1411 gradually increases to reflect the outgoing light emitted from the side of the light-emitting diode 13 to the light-emitting surface of the display panel.

[0055] Optionally, the surface of the second reflective layer 1411 close to the light emitting diode 13 may be an inclined plane or an inclined curved surface. When the surface of the second reflective layer 1411 close to the light emitting diode 13 is an inclined plane, the processing difficulty is lower than that of the inclined curved surface, which is conducive to improving the production efficiency of the display panel. When the surface of the second reflective layer 1411 close to the light emitting diode 13 is an inclined curved surface, the curved surface may bulge in the direction close to the light emitting diode 13 to reflect the outgoing light emitted from the side of the light emitting diode 13 to the light emitting surface of the display panel.

[0056] Optionally, the hole wall of the opening 141 is an inclined surface, and along the light emitting direction of the display panel, the opening area of ​​the opening 141 gradually increases, and the thickness of the second reflective layer 1411 is consistent at various locations of the hole wall of the opening 141. In other words, by designing the hole wall of the opening 141 as an inclined surface, the surface of the second reflective layer 1411 disposed on the hole wall of the opening 141 close to the light emitting diode 13 forms an inclined surface, thereby reducing the difficulty of processing the second reflective layer 1411.

[0057] Optionally, the hole wall of the opening 141 is perpendicular to the driving substrate 11 , and the thickness of the second reflective layer 1411 gradually decreases along the light emitting direction of the display panel, so that the surface of the second reflective layer 1411 close to the light emitting diode 13 forms an inclined surface.

[0058] Optionally, the opening 141 is a through hole penetrating the barrier layer 14 .

[0059] In one embodiment, the second reflective layer 1411 is a mirror reflective layer, which is beneficial for reflecting as much light emitted from the side of the light emitting diode 13 as possible to the light emitting surface, thereby reducing light loss.

[0060] In one embodiment, the material of the second reflective layer 1411 includes metal, which has good reflective properties. Optionally, the material of the second reflective layer 1411 includes silver, which has good light-reflecting properties. Exemplarily, the second reflective layer 1411 is a silver mirror reflective layer.

[0061] In one embodiment, the second insulating protection layer 1412 completely covers the second reflective layer 1411 to protect the second reflective layer 1411 from corrosion by water and oxygen.

[0062] In one embodiment, the material of the second insulating protection layer 1412 includes SiO x and SiN x At least one of SiO x and SiN x Both have good light transmittance and have limited influence on the second reflective layer 1411 reflecting the light emitted by the light emitting diode 13 .

[0063] In one embodiment, the material of the barrier layer 14 includes black glue, which can improve the blackness. It should be noted that when the hole wall of the opening 141 of the barrier layer 14 is not provided with the second reflective layer 1411 and the second insulating protective layer 1412, the light emitted from the side of the light-emitting diode 13 is absorbed by the black glue, causing the black glue to heat up, and then causing the drive substrate 11 to heat up, while reducing the light extraction rate of the light-emitting diode 13; by providing the second reflective layer 1411 on the hole wall of the opening 141, the second reflective layer 1411 reflects the light emitted from the side of the light-emitting diode 13 to the light-emitting surface, reducing the absorption of the black glue, improving the problem of heating of the drive substrate 11, and improving the light extraction rate of the light-emitting diode 13.

[0064] In one embodiment, the encapsulation layer 12 is a cover plate. In other embodiments, the encapsulation layer 12 may be a composite encapsulation layer for encapsulating the light-emitting diode 13 in the prior art (for example, the composite encapsulation layer includes an inorganic encapsulation film layer, an organic encapsulation film layer, and an inorganic encapsulation film layer stacked in sequence), or may be an optical plate, which is specifically designed according to needs.

[0065] In one embodiment, the surface of the light emitting diode 13 facing away from the driving substrate 11 is in contact with the encapsulation layer 12 .

[0066] In one embodiment, the light emitting direction of the display panel is the direction from the driving substrate 11 to the encapsulation layer 12. Along the light emitting direction of the display panel, the surface of the outermost structural layer of the display panel is the light emitting surface of the display panel.

[0067] It should be noted that, in this embodiment, Figure 1 As shown, a first reflective layer 15 and a first insulating protective layer 16 are provided on the surface of the light emitting surface of the light emitting diode 13 away from the display panel, and a second reflective layer 1411 and a second insulating protective layer 1412 are provided on the hole wall of the opening 141, so as to improve the light extraction rate of the light emitting diode 13. In other embodiments, the first reflective layer 15 and the first insulating protective layer 16 may be provided only on the surface of the light emitting surface of the light emitting diode 13 away from the display panel, or the second reflective layer 1411 and the second insulating protective layer 1412 may be provided only on the hole wall of the opening 141, so as to improve the light extraction rate of the light emitting diode 13 to a certain extent.

[0068] An embodiment of the present application further provides a display device, which includes the display panel described in the above embodiment. The display device may be a notebook computer, a personal digital assistant (PDA), a mobile phone, etc.

[0069] See also Figure 4 and Figure 5 , Figure 4is a schematic flow chart of a method for preparing a display panel provided in the first embodiment of the present application, Figure 5 yes Figure 4 The structural diagram of step S02 is shown.

[0070] The method for preparing a display panel provided in the embodiment of the present application specifically includes:

[0071] Step S01: providing a driving substrate 11 .

[0072] In one embodiment, the driving substrate 11 has a solder pad, and solder is printed on the driving substrate 11 to form a solder layer. The specific structure and preparation process of the driving substrate 11 can be referred to the prior art, and will not be described in detail.

[0073] Step S02 : forming a light emitting diode 13 on the driving substrate 11 and forming a first reflective layer 15 and a first insulating protective layer 16 on the light emitting surface of the light emitting diode 13 away from the display panel. The first insulating protective layer 16 is formed on the surface of the first reflective layer 15 .

[0074] In one embodiment, the light emitting diode 13 includes a first electrode 135 and a second electrode 136, and the first electrode 135 and the second electrode 136 are electrically connected to the pad of the driving substrate 11 through solder, so that the driving substrate 11 controls the operation of the light emitting diode 13. The specific method of transferring the light emitting diode 13 provided with the first reflective layer 15 and the first insulating protective layer 16 to the driving substrate 11 is similar to the specific method of transferring the light emitting diode 13 to the driving substrate 11, which can be referred to the prior art and will not be described in detail.

[0075] The steps of forming a light emitting diode 13 on the driving substrate 11 and forming a first reflective layer 15 and a first insulating protective layer 16 on the side of the light emitting diode 13 away from the light emitting surface of the display panel, wherein the first insulating protective layer 16 is formed on the surface of the first reflective layer 15 specifically include:

[0076] Step S021: providing a substrate 131 .

[0077] In one embodiment, the material of the substrate 131 includes sapphire.

[0078] Step S022 : forming a first semiconductor layer 132 , a multi-quantum well layer 133 , and a second semiconductor layer 134 in sequence on the substrate 131 .

[0079] In one embodiment, the material of the first semiconductor layer 132 includes N-GaN; and / or, the material of the second semiconductor layer 134 includes P-GaN. The specific method of sequentially forming the first semiconductor layer 132, the multi-quantum well layer 133, and the second semiconductor layer 134 on the substrate 131 can be referred to the prior art, and will not be described in detail.

[0080] Step S023 : forming a first insulating protection layer 16 on the surface of the second semiconductor layer 134 away from the multi-quantum well layer 133 , and etching the first insulating protection layer 16 to expose the electrode region.

[0081] In one embodiment, a first insulating protection layer 16 is formed on a surface of the second semiconductor layer 134 away from the multi-quantum well layer 133 by deposition.

[0082] In one embodiment, the material of the first insulating protection layer 16 includes SiO x 、SiN x At least one of the above is used to prevent the first reflective layer 15 from being short-circuited with the second semiconductor layer 134 during step S024, thereby preventing the device from failing. The first insulating protective layer 16 on the surface of the second semiconductor layer 134 is etched to expose the electrode region, so that the first electrode 135 formed in step S025 can be electrically connected to the first semiconductor layer 132, and the second electrode 136 can be electrically connected to the second semiconductor layer 134.

[0083] Step S024 : forming a first reflective layer 15 and another first insulating protective layer 16 in sequence on a surface of the first insulating protective layer 16 facing away from the second semiconductor layer 134 .

[0084] In one embodiment, the light-emitting diode 13 is a flip-chip structure, and a first reflective layer 15 is provided on a side of the second semiconductor layer 134 away from the multi-quantum well layer 133. The first reflective layer 15 can reflect the light emitted by the multi-quantum well layer 133 to the substrate 131, and the light emitted by the multi-quantum well layer 133 is emitted from the substrate 131.

[0085] In one embodiment, after the first reflective layer 15 is formed on the surface of the first insulating protection layer 16 away from the second semiconductor layer 134, the surface of the first reflective layer 15 is processed, or the parameters of the process for forming the first reflective layer 15 are adjusted, so that the first reflective layer 15 is a mirror reflective layer. The first reflective layer 15 is a mirror reflective layer, which increases the probability of the emitted light emitted by the light emitting diode 13 being reflected out, which is conducive to improving the light extraction rate.

[0086] In one embodiment, a first reflective layer 15 and another first insulating protective layer 16 are sequentially formed by deposition on a surface of a first insulating protective layer 16 facing away from the second semiconductor layer 134. By forming another first insulating protective layer 16 on the surface of the first reflective layer 15, the first reflective layer 15 is protected to prevent water and oxygen from corroding the first reflective layer 15.

[0087] In one embodiment, the material of the first reflective layer 15 includes metal; and / or the material of the first insulating protective layer 16 includes SiO x、SiN x At least one of .

[0088] In one embodiment, when another first insulating protection layer 16 is deposited on the surface of the first reflective layer 15 , the another first insulating protection layer 16 only covers the surface of the first reflective layer 15 facing away from the second semiconductor layer 134 .

[0089] In one embodiment, when another first insulating protective layer 16 is deposited on the surface of the first reflective layer 15, the other first insulating protective layer 16 not only covers the surface of the first reflective layer 15 facing away from the second semiconductor layer 134, but also covers the side surfaces of the first reflective layer 15; when performing step S025, the other first insulating protective layer 16 is disposed in a manner to avoid short circuit between the first reflective layer 15 and the first electrode 135 and the second electrode 136.

[0090] Step S025 : depositing metal in the electrode region and etching to form a first electrode 135 and a second electrode 136 , wherein the first electrode 135 is electrically connected to the first semiconductor layer 132 , the second electrode 136 is electrically connected to the second semiconductor layer 134 , and the first electrode 135 and the second electrode 136 are spaced apart from the reflective layer 151 .

[0091] In one embodiment, the first reflective layer 15 is spaced apart from the first electrode 135 and the second electrode 136 to avoid short circuit between the first reflective layer 15 and the first electrode 135 and the second electrode 136 to cause device failure.

[0092] It should be noted that before performing step S023, the second semiconductor layer 134 and the multi-quantum well layer 133 need to be etched to form a first contact hole for connecting to the first electrode 135; at the same time, when etching the second semiconductor layer 134, a second contact hole for connecting to the second electrode 136 needs to be formed. In step S023, a portion of the first insulating protection layer 16 corresponding to the first contact hole and the second contact hole is etched to form an electrode region.

[0093] The method for manufacturing a display panel provided in the embodiment of the present application improves the light extraction efficiency of the light emitting diode 13 by forming a first reflective layer 15 and a first insulating protective layer 16 on the light emitting diode 13 .

[0094] See also Figure 6-Figure 9 , Figure 6 is a schematic flow chart of a method for preparing a display panel provided in a second embodiment of the present application, Figure 7 yes Figure 6 The structural diagram of step S03 shown in FIG. Figure 8 yes Figure 7 The schematic diagram of the top view of step S03 is shown in FIG. Fig. 9 yes Figure 6The structural diagram of step S04 shown in FIG. Fig.10 yes Figure 6 The structural diagram of step S05 is shown.

[0095] The method for manufacturing a display panel provided in the second embodiment of the present application is different from the method for manufacturing a display panel provided in the first embodiment of the present application in that: it further includes steps S03 to S05.

[0096] Step S03: providing a cover plate 12 a and forming a barrier layer 14 having openings 141 on the cover plate 12 a.

[0097] In one embodiment, forming the barrier layer 14 having the opening 141 on the cover plate 12a specifically includes:

[0098] Step S031: coating a first material on the surface of the cover plate 12a to form a prefabricated layer.

[0099] In one embodiment, black glue (BM) is coated on the surface of the cover plate 12a, that is, the first material includes black glue to form a prefabricated layer.

[0100] Step S032 : etching the prefabricated layer to form an opening 141 .

[0101] In one embodiment, the prefabricated layer is etched by exposure and development, so that the prefabricated layer is patterned to form a plurality of openings 141, wherein the plurality of openings 141 are designed to be interlocked with the plurality of light-emitting diodes 13, so that when performing step S05, the light-emitting diodes 13 can be embedded in the openings 141. The openings 141 are through holes that penetrate the prefabricated layer.

[0102] Optionally, by adjusting the process parameters during the exposure and development process so that the hole wall of the opening 141 is an inclined surface, so that after step S04, the second reflective layer 1411 formed on the hole wall of the opening 141 is also an inclined surface, a better reflection effect can be achieved, and the output light emitted from the side of the light-emitting diode 13 is reflected to the light-emitting surface of the display panel.

[0103] After step S05, the light emitting direction of the prepared display panel is the direction from the driving substrate 11 to the cover plate 12a. The process parameters in the exposure and development process are adjusted so that the hole wall of the opening 141 forms an inclined surface, and at the same time, the opening area of ​​the opening 141 gradually decreases in the direction away from the cover plate 12a, so that after step S05, the light emitting diode 13 is embedded in the opening 141, and the second reflective layer 1411 formed on the hole wall of the opening 141 in step S04 reflects the light emitted from the side of the light emitting diode 13 to the light emitting surface.

[0104] Step S04 : forming a second reflective layer 1411 and a second insulating protection layer 1412 in sequence on the hole wall of the opening 141 .

[0105] In one embodiment, sequentially forming the second reflective layer 1411 and the second insulating protective layer 1412 on the hole wall of the opening 141 specifically includes:

[0106] Step S041 : depositing a second material on the surface of the barrier layer 14 and the wall of the opening 141 to form a second reflective layer 1411 .

[0107] In one embodiment, the second material is deposited on the surface of the barrier layer 14 by front deposition. While the second material is deposited on the surface of the barrier layer 14, the second material is also deposited on the hole wall of the opening 141, and the thickness of the deposited second material at each location on the hole wall of the opening 141 is consistent. The front deposition refers to deposition in a direction perpendicular to the barrier layer 14. Deposition can be performed by physical vapor deposition (PVD), chemical vapor deposition (CVD) and other processes, which are selected according to needs.

[0108] Optionally, the second material includes metal, which has good light reflection performance. Exemplarily, the second material includes metallic silver.

[0109] Step S042: removing a portion of the second reflective layer 1411 located on the surface of the cover plate 12a.

[0110] In one embodiment, after performing step S05, the light emitting direction of the prepared display panel is the direction in which the driving substrate 11 points to the cover plate 12a, that is, the light emitted by the light emitting diode 13 is directed toward the cover plate 12a as the desired light emitting direction. The etching process is used to remove part of the second reflective layer 1411 located in the opening 141 and on the surface of the cover plate 12a, so as to prevent the part of the second reflective layer 1411 from reflecting the light emitted by the light emitting diode 13 in a direction away from the light emitting surface of the display panel, resulting in a low light extraction rate of the light emitting diode 13.

[0111] In one embodiment, a portion of the second reflective layer 1411 located on the surface of the cover plate 12a is removed by an etching process, and a portion of the second reflective layer 1411 located on the surface of the barrier layer 14 is also removed, that is, only the second reflective layer 1411 located at the hole wall of the opening 141 is retained.

[0112] It should be noted that after performing step S05, the light emitting direction of the prepared display panel is the direction from the driving substrate 11 to the cover plate 12a. Whether to remove part of the second reflective layer 1411 located on the surface of the barrier layer 14 has little effect on the light extraction rate of the light-emitting diode 13, because the light-emitting diode 13 is located in the opening 141, and part of the second reflective layer 1411 located on the surface of the barrier layer 14 is not on the emission path of the emitted light of the light-emitting diode 13, and has almost no effect on the emitted light of the light-emitting diode 13. Optionally, after performing step S041, the surface of the second reflective layer 1411 is processed, or the formation process of the second reflective layer 1411 is adjusted, so that the second reflective layer 1411 becomes a mirror reflection layer, and then step S042 is performed to achieve a better reflection effect. Optionally, after performing step S042, the surface of the retained second reflective layer 1411 is processed so that the second reflective layer 1411 becomes a mirror reflection layer to achieve a better reflection effect.

[0113] For example, Fig. 9 As shown, metallic silver is deposited on the surface of the barrier layer 14 and the hole wall of the opening 141 to form a second reflection layer 1411, and the second reflection layer 1411 is a silver mirror reflection layer; a portion of the second reflection layer 1411 located on the surface of the cover plate 12a and in the opening 141 is removed by an etching process, and a portion of the second reflection layer 1411 located on the surface of the barrier layer 14 is removed, and only the second reflection layer 1411 located at the hole wall of the opening 141 is retained. At this time, the second reflection layer 1411 at the hole wall of the opening 141 is a silver mirror reflection layer.

[0114] Step S043 : depositing a third material again on the surface of the barrier layer 14 and the wall of the opening 141 to form a second insulating protection layer 1412 .

[0115] In one embodiment, the third material is deposited again on the surface of the barrier layer 14 by front deposition. While the third material is deposited on the surface of the barrier layer 14, the third material is also deposited on the surface of the second reflective layer 1411 of the hole wall of the opening 141, and the thickness of the third material deposited at each location on the surface of the second reflective layer 1411 on the hole wall of the opening 141 is uniform. The front deposition refers to deposition in a direction perpendicular to the barrier layer 14. Deposition can be performed by physical vapor deposition (PVD), chemical vapor deposition (CVD) and other processes, which are selected according to needs.

[0116] Optionally, the third material includes SiO x 、SiN x At least one of them is insulating and can effectively prevent the second reflective layer 1411 from being corroded by water and oxygen.

[0117] It should be noted that after performing step S043, part of the second insulating protective layer 1412 located on the surface of the cover plate 12a and / or part of the second insulating protective layer 1412 located on the surface of the barrier layer 14 can be removed, and the step of removing part of the second insulating protective layer 1412 located on the surface of the cover plate 12a and / or part of the second insulating protective layer 1412 located on the surface of the barrier layer 14 is an optional step.

[0118] For example, Fig. 9 As shown, SiOx is deposited on the surface of the barrier layer 14 and the wall of the opening 141 to form a second insulating protective layer 1412; a portion of the second insulating protective layer 1412 located on the surface of the cover plate 12a and on the surface of the barrier layer 14 is removed by an etching process, and only the second insulating protective layer 1412 on the surface of the second reflective layer 1411 located at the wall of the opening 141 is retained.

[0119] Step S05 : Aligning and laminating the cover plate 12 a and the driving substrate 11 so that the light emitting diode 13 is embedded in the opening 141 .

[0120] In one embodiment, during the process of aligning and bonding the cover plate 12a to the driving substrate 11, the light-emitting diode 13 transferred to the driving substrate 11 is embedded in the opening 141 of the barrier layer 14 on the cover plate 12a, and the second reflective layer 1411 and the second insulating protection layer 1412 formed on the hole wall of the opening 141 are embedded between adjacent light-emitting diodes 13. The second reflective layer 1411 surrounds the circumference of the light-emitting diode 13, and reflects the output light emitted from the side of the light-emitting diode 13 to the light-emitting surface of the display panel, thereby reducing the output light emitted from the side of the light-emitting diode 13 being absorbed by the barrier layer 14, thereby improving the light extraction rate.

[0121] The method for preparing a display panel provided in an embodiment of the present application forms a barrier layer 14 on the surface of a cover plate 12a, transfers the light-emitting diode 13 to the surface of a driving substrate 11, and then aligns the cover plate 12a with the driving substrate 11 to embed the light-emitting diode 13 into the opening 141 of the barrier layer 14. Compared with directly forming the barrier layer 14 on the driving substrate 11, this simplifies the process, reduces the process difficulty, and helps reduce costs.

[0122] The above are only implementation methods of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A display panel, characterized in that: include: Driver substrate; A light emitting diode is disposed on the driving substrate; The display panel comprises a light emitting surface, and a first reflective layer and a first insulating protective layer are provided on a side of the light emitting diode away from the light emitting surface; the first insulating protective layer is provided on a surface of the first reflective layer.

2. The display panel according to claim 1, characterized in that: The first insulating protection layer is disposed on a surface of the first reflective layer close to the light emitting diode and a surface of the first reflective layer far from the light emitting diode.

3. The display panel according to claim 1 or 2, characterized in that: The first reflective layer is provided on a side of the light emitting diode where the first electrode and the second electrode are provided; Preferably, the first reflective layer is disposed between the first electrode and the second electrode, and the first reflective layer is spaced apart from the first electrode and the second electrode; Preferably, the light-emitting diode comprises a substrate, a first semiconductor layer, a multi-quantum well layer, and a second semiconductor layer which are stacked in sequence, and the light-emitting diode further comprises a first electrode and a second electrode, the first electrode is electrically connected to the first semiconductor layer, the second electrode is electrically connected to the second semiconductor layer, and the first electrode and the second electrode are electrically connected to the pad of the driving substrate through solder; The first reflective layer is arranged on a side of the second semiconductor layer away from the multi-quantum well layer, and the first insulating protective layer is provided on a surface of the first reflective layer close to the second semiconductor layer, a surface of the first reflective layer away from the second semiconductor layer, a side of the first reflective layer close to the first electrode, and a side of the first reflective layer close to the second electrode.

4. The display panel according to claim 1, characterized in that: The display panel further comprises a barrier layer, the barrier layer is formed with an opening, the light emitting diode is arranged in the opening; a second reflective layer is arranged on the hole wall of the opening, and a second insulating protective layer is arranged on the surface of the second reflective layer; Preferably, the display panel further comprises an encapsulation layer, the encapsulation layer is located on a side of the barrier layer and the light-emitting diode away from the driving substrate, and the barrier layer is bonded to the encapsulation layer; Preferably, the encapsulation layer is a cover plate, and / or the material of the barrier layer includes black glue.

5. The display panel according to claim 4, characterized in that: The surface of the second reflective layer close to the light emitting diode is an inclined surface, and the opening area formed by the second reflective layer gradually increases along the light emitting direction of the display panel; Preferably, the hole wall of the opening is an inclined surface, and the opening area of ​​the opening gradually increases along the light emitting direction of the display panel; the thickness of the reflective layer at each location of the hole wall of the opening is consistent; Preferably, the surface of the reflective layer close to the light emitting diode is an inclined plane; Preferably, the reflective layer covers the entire hole wall of the opening; Preferably, the light emitting direction of the display panel is the direction from the driving substrate to the encapsulation layer.

6. The display panel according to claim 4, characterized in that: The first reflective layer is a mirror reflective layer; and / or the material of the first reflective layer includes metal; and / or the material of the first insulating protective layer includes SiO x and SiN x At least one of; and / or the second reflective layer is a specular reflective layer; and / or the material of the second reflective layer includes metal; and / or the material of the second insulating protective layer includes SiO x and SiN x At least one of; Preferably, the first reflection layer is a silver mirror reflection layer; and / or the second reflection layer is a silver mirror reflection layer.

7. A display device, characterized in that: A display panel comprising any one of claims 1 to 6.

8. A method for preparing a display panel, characterized in that: include: Providing a driving substrate; A light emitting diode is formed on the driving substrate, and a first reflective layer and a first insulating protective layer are formed on a side of the light emitting diode away from a light emitting surface of the display panel, wherein the first insulating protective layer is formed on a surface of the first reflective layer.

9. The preparation method according to claim 8, characterized in that: The steps of forming a light emitting diode on the driving substrate and forming a first reflective layer and a first insulating protective layer on a side of the light emitting diode away from the light emitting surface of the display panel specifically include: providing a substrate; forming a first semiconductor layer, a multi-quantum well layer, and a second semiconductor layer in sequence on a substrate; forming the first insulating protection layer on the surface of the second semiconductor layer away from the multi-quantum well layer, and etching the first insulating protection layer to expose the electrode region; sequentially forming the first reflective layer and another first insulating protective layer on a surface of the first insulating protective layer facing away from the second semiconductor layer; Metal is deposited and etched in the electrode region to form a first electrode and a second electrode, wherein the first electrode is electrically connected to the first semiconductor layer, the second electrode is electrically connected to the second semiconductor layer, and the first electrode and the second electrode are spaced apart from the first reflective layer.

10. The preparation method according to claim 8, characterized in that: The preparation method further comprises: providing a cover plate, on which a barrier layer having openings is formed; forming a second reflective layer and a second insulating protective layer on the hole wall of the opening in sequence; The cover plate is aligned and fitted with the driving substrate so that the light emitting diode is embedded in the opening.

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