Parasitic plasma suppressor

Abstract

A parasitic plasma suppressor configured to suppress (or at least reduce) the generation of parasitic plasma outside a desired region, for example, to suppress parasitic plasma generation in a region near a susceptor in a processing chamber of a plasma enhanced processing system.

Description

Incorporation by Reference

[0001] The PCT application form is filed concurrently with this specification as a part of this application. Each application identified in the concurrently filed PCT application form to which this application claims the benefit or priority is incorporated herein by reference in its entirety and for all purposes. Background Art

[0002] Some semiconductor processing systems may employ plasma when etching features into existing structures or depositing thin films on substrates such as in a processing chamber. For example, plasma enhanced chemical vapor deposition (PECVD) is a plasma deposition for depositing thin films from a gaseous state (e.g., a vapor state) to a solid state on a substrate. In plasma etching, high energy and / or reactive species generated by one or more process gases may bombard a surface and / or react with the surface to remove material therefrom, and thereby etch the surface. During deposition, one or more process gases may be delivered to the processing chamber using a showerhead disposed above the substrate. Power such as radio frequency (RF) power may be supplied to the showerhead or electrode to generate plasma in an area adjacent to the substrate. High energy electrons in the plasma ionize or dissociate the reaction gas to generate more chemically active free radicals, which react to form a thin film on the substrate. In this way, the energy provided by the plasma may be used to reduce the process temperature, which would otherwise provide a thermal stimulus for the reaction. However, it is worth noting that the reaction gas at other locations in the processing chamber may be excited to generate unnecessary (or parasitic) plasma.

[0003] The background description provided here is for the purpose of generally presenting the background of the present disclosure. The work of the currently designated inventors within the scope described in this background section and aspects of the specification that could not be determined as prior art at the time of filing the application are neither explicitly nor implicitly admitted to be prior art against the present disclosure. Summary of the invention

[0004] Details of one or more implementations of the subject matter described in this specification are set forth in the accompanying drawings and the following description. Other features, aspects, and advantages will become apparent from the description, drawings, and claims. The following non-limiting implementations are considered part of this disclosure; other implementations will also be apparent from the overall disclosure and drawings.

[0005] Some embodiments provide an apparatus that can suppress (or at least reduce) the generation of parasitic plasma outside of a desired area, such as in an area near a susceptor in a processing chamber of a plasma enhanced processing system.

[0006] Additional aspects will be set forth in the detailed description which follows, and in part will be apparent from the invention, or may be learned by practice of the disclosed embodiments and / or claimed subject matter.

[0007] According to one embodiment, a device configured to mitigate parasitic plasma generation associated with a plasma enhanced process includes an annular shield structure. The annular shield structure includes a first inner surface, a first outer surface, a first upper surface, a first lower surface, and a plurality of openings. The first outer surface is opposite to the first inner surface in a radial direction. The first upper surface extends between the first inner surface and the first outer surface. The first lower surface extends between the first inner surface and the first outer surface. The first lower surface is opposite to the first upper surface in an axial direction transverse to the radial direction. The plurality of openings extend longitudinally between the first upper surface and the first lower surface. The openings each include a maximum dimension in a plane perpendicular to the axial direction, the maximum dimension being less than or equal to approximately twice the thickness of a plasma sheath associated with the plasma enhanced process.

[0008] In some embodiments, the maximum dimension can extend along the radial direction.

[0009] In some embodiments, the openings may also include a minimum dimension in the axial direction or in a direction transverse to the axial direction, respectively.

[0010] In some embodiments, the annular shielding structure may include a plurality of annular shielding rings that are spaced apart from each other by the maximum dimension in the radial direction such that the opening is defined by the spaces between the annular shielding rings.

[0011] In some embodiments, the annular shield structure may be formed as a unitary body, and the opening is defined as a through hole extending through the unitary body.

[0012] In some embodiments, the device may further include an annular support structure. The annular support structure may include a second inner surface; and a second outer surface, the second outer surface being located between the first inner surface and the second inner surface along the radial direction, so that the annular shielding structure surrounds the annular support structure. The annular shielding structure and the annular support structure may be detachably coupled to each other.

[0013] In some embodiments, the annular shield structure and the annular support structure may be removably coupled to each other via a bayonet-type joint.

[0014] In some embodiments, the bayonet joint may include a plurality of protrusions extending radially from one of the first inner surface and the second outer surface; and a plurality of grooves defined in the other of the first inner surface and the second outer surface. The grooves may be respectively configured to receive corresponding ones of the protrusions in the first groove portion in response to relative translation between the annular shield structure and the annular support structure along the axial direction. The grooves may also receive the corresponding protrusions in the second groove portion that is communicatively coupled to the first groove portion in response to relative rotation between the annular shield structure and the annular support structure in a first rotational direction about an axis extending along the axial direction.

[0015] In some embodiments, the plurality of protrusions may include at least three protrusions.

[0016] In some embodiments, the plurality of protrusions may include at least four protrusions.

[0017] In some embodiments, the annular shielding structure may include a plurality of annular shielding rings spaced apart from each other by the maximum dimension in the radial direction such that the openings are defined by the spaces between the annular shielding rings, and the annular shielding rings may respectively include corresponding groups of the plurality of slots.

[0018] In some embodiments, the upper surfaces of the corresponding annular shield rings may be offset from each other in the axial direction.

[0019] In some embodiments, the upper surfaces of the annular shielding rings may be offset from each other so that the distance between the upper surfaces of the annular shielding rings and a reference plane increases as the distance from the first inner surface increases. The reference plane may include the upper surface of the upper surfaces that is closest to the first inner surface.

[0020] In some embodiments, in the engaged state of the bayonet joint, the corresponding set of corresponding slots are configured to receive identical corresponding protrusions of the plurality of protrusions.

[0021] In some embodiments, the apparatus may further include one or more retaining structures configured to limit relative rotation between the annular shielding structure and the annular support structure in a second rotational direction about the axis, the second rotational direction being opposite to the first rotational direction.

[0022] In some embodiments, at least one of the grooves may be further configured to receive the retaining structure in the first groove portion of the at least one groove and the third groove portion of the at least one groove in response to the relative translation between the retaining structure and the at least one groove in the one or more retaining structures in the radial direction. The third groove portion of the at least one groove may be coupled between the first groove portion of the at least one groove and the second groove portion of the at least one groove. In addition, in the engaged state of the annular shielding structure and the annular support structure and the engaged state of the retaining structure and the at least one groove, the retaining structure may be configured to retain the corresponding protrusion in the second groove portion of the at least one groove.

[0023] In some embodiments, the retaining structure may include a main body portion; a first protrusion extending from a first side wall of the main body portion; and a plurality of second protrusions extending from the main body portion, the first protrusion, or a lower surface of the main body portion and the first protrusion. In the engaged state of the retaining structure and the at least one slot: the main body portion may be disposed in the first slot portion of the at least one slot; the first protrusion may be disposed in one or both of the second slot portion of the at least one slot and the third slot portion of the at least one slot; and the second protrusions may be disposed in corresponding openings of the openings in the annular shielding structure.

[0024] In some embodiments, the device may also include one or more retaining structures. At least one of the grooves may be further configured to receive the retaining structure in the first groove portion of the at least one groove and the third groove portion of the at least one groove in response to the relative translation between the retaining structure and the at least one groove in the one or more retaining structures in the radial direction. The third groove portion of the at least one groove may connect the first groove portion of the at least one groove and the second groove portion of the at least one groove. In the engaged state of the annular shielding structure and the annular support structure and the engaged state of the retaining structure and the at least one groove, the retaining structure may be configured to retain the corresponding protrusion in the second groove portion of the at least one groove, and may limit the relative rotation between the annular shielding structure and the annular support structure in the second rotation direction around the axis. The second rotation direction may be opposite to the first rotation direction.

[0025] In some embodiments, the annular support structure may further include at least one inner protrusion extending from the second inner surface toward a central axis of the annular support structure. The central axis may extend along the axial direction. The at least one inner protrusion may include a third upper surface; and a third lower surface, which is opposite to the third upper surface in the axial direction.

[0026] In some embodiments, the at least one inner protrusion may extend circumferentially around at least a portion of the periphery of the annular support structure.

[0027] In some embodiments, the device may further include a processing chamber and a base. The processing chamber may include at least one sidewall. The base may be supported within the processing chamber. The base may include an outer boundary surface. In the radial direction, the annular shielding structure may be disposed between the outer boundary surface of the base and the at least one sidewall.

[0028] In some embodiments, the apparatus may further include a showerhead supported within the processing chamber such that the showerhead faces the susceptor in the axial direction. The showerhead may be configured to distribute one or more process gases in an area above the susceptor.

[0029] In some embodiments, the device further includes at least one dielectric ring surrounding the outer boundary surface of the base. The at least one dielectric ring may include a fourth inner surface facing the outer boundary surface of the base in the radial direction; a fourth outer surface opposite to the fourth inner surface in the radial direction; a fourth upper surface extending between the fourth inner surface and the fourth outer surface; and a fourth lower surface extending between the fourth inner surface and the fourth outer surface. The fourth lower surface may be opposite to the fourth upper surface in the axial direction. In the radial direction, the annular shielding structure may be disposed between the at least one dielectric ring and the at least one sidewall.

[0030] In some embodiments, the first inner surface can be spaced apart from the fourth outer surface in a plane perpendicular to the axial direction by a dimension less than or approximately equal to a thickness of the plasma sheath associated with the plasma enhanced process.

[0031] In some embodiments, the device may further include a focus ring disposed on an outer peripheral portion of the upper surface of the base. The focus ring may include a fifth inner surface; a fifth outer surface that is opposite to the fifth inner surface in the radial direction; a fifth upper surface that extends between the fifth inner surface and the fifth outer surface; and a fifth lower surface that extends between the fifth inner surface and the fifth outer surface. The fifth lower surface may be opposite to the fifth upper surface in the axial direction. In a plan view, at least a portion of the fourth upper surface may be adjacent to the fifth upper surface in the radial direction.

[0032] In some embodiments, the first upper surface can be disposed below a reference plane including the fifth upper surface.

[0033] In some embodiments, the fourth upper surface may be disposed at or below a reference plane that includes the fifth lower surface.

[0034] In some embodiments, the third lower surface can abut against the fourth upper surface.

[0035] In some embodiments, the second inner surface can abut against the fourth outer surface.

[0036] In some embodiments, the first exterior surface can be spaced apart from the at least one sidewall.

[0037] In some embodiments, the plurality of protrusions may extend radially from the second outer surface; the outermost boundary surface of at least one of the plurality of protrusions may be disposed closer to the at least one side wall than the first outer surface; and the outermost boundary surface of the at least one protrusion is spaced apart from the at least one side wall.

[0038] In some embodiments, the device may further include a shield that is laid on the inner surface of the at least one side wall. In the radial direction, the annular shielding structure may be disposed between the outer boundary surface of the base and the shield. The outermost boundary surface of the at least one protrusion may be spaced apart from the shield.

[0039] In some embodiments, the device may further include a shield lining the inner surface of the at least one side wall. In the radial direction, the annular shielding structure may be disposed between the outer boundary surface of the base and the shield.

[0040] In some embodiments, the shield may comprise aluminum.

[0041] In some embodiments, the processing chamber may include an exhaust port configured to evacuate gases associated with the plasma enhanced process. The gas may include byproduct gas, unreacted process gas, or byproduct gas and unreacted process gas. The openings may be configured to allow the gas to flow from a first region above the susceptor to the exhaust port via a second region adjacent to the first region. The second region may be spaced apart from the susceptor in the radial direction. The openings may also suppress the generation of plasma in the second region.

[0042] In some embodiments, in connection with the plasma enhanced process, the openings can be further configured to quench the flow of one or more high energy species therethrough.

[0043] In some embodiments, the susceptor can be configured to support a substrate in the processing chamber, the substrate comprising a maximum dimension in a direction perpendicular to the axial direction. The maximum dimension between opposing portions of the first inner surface in the direction perpendicular to the axial direction can be greater than the maximum dimension of the substrate.

[0044] In some embodiments, the first inner surface can be adjacent to the second outer surface.

[0045] In some embodiments, the maximum dimension of the annular shielding structure in the axial direction may be greater than the maximum dimension of the annular support structure in the axial direction.

[0046] In some embodiments, the annular shielding structure may include a ceramic material.

[0047] In some embodiments, the annular support structure may comprise a ceramic material.

[0048] The foregoing general description and the following detailed description are illustrative and explanatory and are intended to provide further explanation of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] Various embodiments disclosed herein are illustrated by way of example and not limitation in the figures of the accompanying drawings in which like reference numerals refer to similar elements.

[0050] Figure 1 A substrate processing system according to some embodiments is schematically illustrated, which substrate processing system can not only be used to process a wafer but also can suppress (or reduce) parasitic plasma.

[0051] Figure 2 Schematically illustrates a Figure 1 A partial cross-sectional view of the system.

[0052] Figure 3 Schematically illustrates a Figure 2 A magnified view of a portion of .

[0053] Figure 4 Schematically illustrates a Figure 1 The flow of one or more process gases in a system.

[0054] Figure 5A Schematically depicts a perspective view of an annular shielding structure according to some embodiments.

[0055] Figure 5B Schematically illustrates a Figure 5A A partial plan view of the annular shielding structure.

[0056] Figure 6 Schematically illustrates a Figure 5A Partial side view of the annular shielding structure.

[0057] Figure 7 Schematically illustrated is a plan view of a plurality of concentrically aligned annular shield rings in accordance with some embodiments.

[0058] Figure 8Schematically illustrated is a plan view of an annular shielding structure according to some embodiments.

[0059] Fig.9A and 9B Schematically illustrates a Figure 8 Partial side view of the annular shielding structure.

[0060] Fig.10 Schematically depicts a perspective view of an annular support structure according to some embodiments.

[0061] Fig.11 Schematically illustrates a Fig.10 Bottom view of a portion of the annular support structure.

[0062] Fig.12 Schematically illustrates a Fig.10 A cross-sectional view of the annular support structure taken along section line 12-12.

[0063] Fig.13A Schematically depicts a plan view of a portion of an annular support structure and a partial assembly between a plurality of annular shield rings, according to some embodiments.

[0064] Fig. 13B Schematically depicts a plan view of a portion of an assembly between an annular support structure, a plurality of annular shield rings, and a retaining structure according to some embodiments.

[0065] Fig.14 Schematically illustrates a Fig. 13B A partial side view of an assembly.

[0066] Fig.15 Schematically depicted is a perspective view of a retention structure according to some embodiments.

[0067] Fig.16 Schematically depicts a partial side view of a portion of an assembly between two annular shield rings and a retaining structure, according to some embodiments.

[0068] Fig.17A and 17B Parasitic plasma generation in a conventional substrate processing system and a substrate processing system according to some embodiments is compared.

[0069] Fig.18 A schematic diagram of an exemplary multi-station processing tool is schematically illustrated according to some embodiments. DETAILED DESCRIPTION

[0070] In the following description, numerous specific details are set forth to provide a thorough understanding of various embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other cases, well-known process operations are not described in detail to avoid unnecessarily obscuring the disclosed embodiments. Although the disclosed embodiments will be described in conjunction with specific embodiments, it should be understood that they are not intended to limit the disclosed embodiments.

[0071] In this application, the terms "semiconductor wafer", "wafer", "substrate", "wafer substrate", and "partially fabricated integrated circuit" are used interchangeably. One of ordinary skill in the art will appreciate that the term "partially fabricated integrated circuit" may refer to a silicon wafer during any of many stages of integrated circuit fabrication. Wafers or substrates used in the semiconductor device industry typically have a diameter of 200 mm or 300 mm or 450 mm. In addition to semiconductor wafers, other workpieces that may utilize the disclosed embodiments include a variety of articles of manufacture, such as printed circuit boards, magnetic recording media, magnetic recording sensors, mirrors, optical elements, micromechanical devices, and the like. Context

[0072] As previously described, at locations in the processing chamber other than regions above a processing region (e.g., a deposition region, an etching region, etc.) on a substrate, a reactive gas may be accidentally excited to generate a parasitic plasma. The generation of a parasitic plasma may not only reduce the energy efficiency associated with a plasma enhanced process (e.g., PECVD of silicon nitride), but may also cause various other problems during plasma processing, such as particle contamination, spatial and temporal non-uniformity, thermal shock, premature failure of chamber components, arcing, and / or the like. It is also recognized that reduced energy efficiency due, at least in part, to the generation of a parasitic plasma may result in a slower deposition or etching rate. Slower deposition and / or etching rates increase manufacturing time and, therefore, may increase manufacturing costs. Therefore, various embodiments are directed to a parasitic plasma suppressor configured to prevent or at least reduce the generation of a parasitic plasma, such as reducing the generation of a parasitic plasma in a region of a processing chamber adjacent to a susceptor. For example, in some cases, the parasitic plasma suppressor can be configured to suppress the generation of parasitic plasma between the peripheral edge (or outer boundary surface) of the pedestal and the inner surface of the processing chamber (e.g., the inner surface of a shield (or liner) lining at least a portion of the processing chamber). In this way, various embodiments can cause less power to be diverted to the surrounding area in the processing chamber, and thereby enable more power to be delivered to the area above the processing area on the substrate. The increase in power can achieve an increase in deposition and / or etching rates. In addition, suppressing parasitic plasma in undesirable areas adjacent to the pedestal can prevent (or at least reduce) particle contamination, spatial and temporal non-uniformities, thermal shock, premature failure of chamber components, arcing, and / or the like associated with plasma enhanced processes. Parasitic plasma suppression system

[0073] Figure 1 A substrate processing system (or system 100 ) is schematically illustrated according to some embodiments, which can be used not only to process a wafer 101 , but also to suppress (or reduce) parasitic plasma. Figure 2 Schematically illustrates a Figure 1 A partial cross-sectional view of the system. Figure 3 Schematically illustrates a Figure 2 A magnified view of a portion of . Figure 4 Schematically illustrates a Figure 1 The flow of one or more process gases in a system.

[0074] System 100 includes chamber 103, which in some cases can be divided into an upper chamber portion and a lower chamber portion. The central column is configured to support susceptor 105 when the surface of wafer 101 is being processed (e.g., a film is being formed on the surface of wafer 101). According to some embodiments, susceptor 105 may be or may include a powered electrode, such as powered electrode 201. Therefore, susceptor 105 can be electrically coupled to power supply 107 via matching network 109. To this end, power supply 107 can be controlled by control module (or controller) 111. In some embodiments, power can be provided to showerhead 113 instead of susceptor 105 (or provided to showerhead 113 in addition to susceptor 105). Control module 111 is configured to operate system 100 by executing one or more sequences of one or more instructions defining at least one process recipe. Thus, the control module 111 may set various operational inputs for defining a process recipe, such as power levels, timing parameters, process gases, mechanical movement of the wafer 101 , height of the wafer 101 from the susceptor 105 , and the like.

[0075] According to some embodiments, the center column may include a lift pin mechanism communicatively connected to the lift pins. Thus, the lift pin mechanism and the lift pins may be controlled by lift pin control signals from, for example, the control module 111. The lift pins may be used to lift the wafer 101 off the base 105 to allow the end effector to pick up the wafer 101 and to lower the wafer 101 after the wafer 101 is placed by the end effector. In some embodiments, the lift pins may be part of the center column. To this end, the chamber 103 may include a chamber transfer port 115, through which the end effector may introduce the wafer 101 into or remove it from the chamber 103. In some cases, the relative displacement between the base 105 and the showerhead 113 may be used to provide a controlled separation between the wafer 101 and the surface of the showerhead 113 facing the wafer 101. The chamber 103 may also include openings 103a and 103b through which portions of the base 105 and the showerhead 113 (eg, stem portions of the base 105 and the showerhead 113) extend.

[0076] The system 100 also includes a gas supply manifold 117 that is fluidly connected to a gas source 119, such as a gas chemical supply from a facility. Depending on the process being performed, the control module 111 can control the delivery of process gases from the gas source 119 to the showerhead 113 via the gas supply manifold 117. The process gases may be pre-mixed or not pre-mixed. Appropriate valves and mass flow control mechanisms can be used and controlled via the control module 111 to ensure that the appropriate process gases are delivered during the deposition and plasma treatment stages of the process. In this way, the selected process gas can flow into the showerhead 113 and can be distributed in a processing area 121 defined between the surface of the showerhead 113 facing the wafer 101 and the upper surface of the wafer 101. In some embodiments, the wafer 101 can be placed on a carrier ring, which can be supported on or by the susceptor 105.

[0077] In various embodiments, the process gas leaves the chamber 103 via an exhaust port (or outlet) 123 that is fluidly connected to, for example, a vacuum pump 125. The vacuum pump 125 can be a single-stage or two-stage mechanical dry pump and / or a turbomolecular pump. In this way, the process gas can be pumped out of the chamber 103 to maintain an appropriate low pressure therein. To this end, a closed-loop flow restriction device, such as a throttle valve or a pendulum valve, can be controlled via the control module 111 to further ensure an appropriate low pressure in the chamber 103.

[0078] According to some embodiments, a carrier plate may be received above the susceptor 105. The carrier plate may be configured to support and hold the wafer 101 when received. In some embodiments, the carrier plate may be a detachable unit (or structure) that can be moved into and out of the chamber 103. For example, the wafer 101 may be pre-loaded onto a carrier plate outside the chamber 103, and the carrier plate with the wafer 101 loaded thereon may be transferred into the chamber 103. In this way, the carrier plate with the wafer 101 loaded thereon may be received on the susceptor 105. In some embodiments, the carrier plate may include a surface diameter that is defined in a substrate support area in a central area and may extend the top surface of the susceptor 105. The surface diameter may be at least equal to (or approximately equal to) the diameter of the wafer 101 received on the carrier plate.

[0079] In some embodiments, the pedestal 105 may be connected to an electrostatic chuck (ESC) control device. The voltage applied to the pedestal 105 by the ESC control device can generate a clamping force or a loosening force for clamping or loosening the carrier plate to or from the upper surface of the pedestal 105. In some embodiments, the voltage for clamping or loosening can be provided in response to a signal from the control module 111. In addition, the control module 111 can also be configured to control the lift pin mechanism, so that when the lift pins are activated, the carrier plate and the wafer 101 can be lifted off the upper surface of the pedestal 105.

[0080] like Figure 1-3 As shown in , the focus ring 127 can be disposed on the periphery (or peripheral region) of the pedestal 105 and can have an upper surface 127a and a lower surface 127b. In addition, the focus ring 127 can be a quartz ring having an inner surface 127c facing the plasma generated in the processing region (or area) 121. Although shown as a rectangular region, the processing region 121 can be more like a cloud-like region in which plasma can be generated. In some cases, the focus ring 127 can be part of an assembly (or group of components) surrounding the pedestal 105. The assembly can include a plurality of dielectric rings, such as dielectric rings 203 and 205, which can be disposed below the focus ring 127. In some embodiments, the dielectric rings 203 and 205 can be electrically floating.

[0081] The dielectric rings 203 and 205 may be formed of a ceramic material such as aluminum oxide or aluminum nitride, but the embodiment is not limited thereto. In some embodiments, the dielectric rings 203 and 205 may be formed of the same material or of materials different from each other. To this end, the dielectric rings 203 and 205 may have respective annular shapes, the corresponding inner diameters of which are greater than the outer boundary of the base 105. The dielectric ring 205 may surround the dielectric ring 203, and thus may have an inner diameter greater than the outer diameter of the dielectric ring 203. The dielectric ring 203 may include a protrusion 203p configured to dock with the base 105, for example, the protrusion 203p may be detachably coupled to the base 105. It should also be noted that the outer diameter of the focus ring 127 may be smaller than the outer diameter of each of the dielectric rings 203 and 205. Therefore, one or more of the upper surfaces 203a and 205a of the dielectric rings 203 and 205 may be exposed from the focus ring 127. For example, in a plan view, at least a portion of at least one of the upper surfaces 203a and 205a of the dielectric rings 203 and 205 may be adjacent to the upper surface 127a of the focus ring 127. The upper surfaces 203a and 205a of the dielectric rings 203 and 205 may also be disposed at or below the reference plane 315, including (e.g., tangent to) the lower surface 127b of the focus ring 127. As will be more apparent below, the upper surfaces 203a and 205a of the dielectric rings 203 and 205 may provide a mating (or resting) surface on which one or more other components may be supported. Although the dielectric rings 203 and 205 are depicted as being adjacent to each other, in some embodiments, the dielectric rings 203 and 205 may be spaced apart from each other. That is, the dielectric ring 205 may be coupled to (e.g., removably coupled to) the dielectric ring 203 and / or the base 105. In some implementations, one or more of dielectric rings 203 and / or 205 may be omitted.

[0082] The system 100 may also include a shield (or liner) 207 lining one or more interior surfaces of the chamber 103. The shield 207 may be formed of a metal or metal alloy (e.g., aluminum or an aluminum alloy), but the embodiment is not limited thereto. The shield 207 is configured to be removed during maintenance of the chamber 103 to prevent (or at least reduce) accumulation of material (e.g., metal material) on the walls of the chamber 103. To this end, the shield 207 may also be configured to reduce heat transfer to the walls of the chamber 103 to help stabilize the internal temperature of the chamber 103. Therefore, the shield 207 may serve as a sacrificial layer configured to prevent (or reduce) damage to the chamber 103.

[0083] According to various embodiments, the generation of parasitic plasma outside of the region above the intended deposition or etching region on the wafer 101 (e.g., outside the processing region 121) may be prevented or at least reduced via a parasitic plasma suppressor (or skirt), such as a parasitic plasma suppressor 129. Hereinafter, the parasitic plasma suppressor 129 will be referred to as suppressor 129. The suppressor 129 may be retrofitted into an existing substrate processing system and / or implemented as part of an initial substrate processing system installation. For example, the suppressor 129 may be supported by the pedestal 105 via, for example, an annular support structure 209. In some cases, the annular support structure 209 may be supported by (or by) the pedestal 105, such as supported from one or more shielding structures (e.g., one or both of the dielectric rings 203 and 205), coupled to the pedestal 105, or directly supported by the pedestal 105 itself. In combination with the pedestal 105, the pedestal 105 may be provided with a plurality of shielding structures, such as a plurality of shielding structures, such as a plurality of shielding structures, such as a plurality of shielding structures, coupled to the pedestal 105, or directly supported by the pedestal 105 itself. Figure 10-12 An example annular support structure is described in further detail.In some cases, suppressor 129 may be supported by (or by) chamber 103, shroud 207, and / or any other suitable structure in (or associated with) chamber 103.

[0084] The suppressor 129 is configured to suppress parasitic plasma generation near RF powered, grounded, and / or floating surfaces (e.g., near the pedestal 105, the electrode 201 of the pedestal 105, the shield 207, the chamber 103, etc.) while enabling gases (e.g., process gases, byproduct gases, unreacted gases, etc.) to flow from the processing region 121 through the pedestal 105 and thereby be exhausted from the chamber 103 via the exhaust port 123, as shown in FIG. Figure 4As shown. Thus, the suppressor 129 may include a plurality of openings, such as opening 303, extending longitudinally between an upper surface 129a and a lower surface 129b of the suppressor 129 to allow gas to flow from the processing region 121 to the exhaust port 123 via, for example, flow paths 401 and 403. As will be more clearly shown below, the configuration of the opening 303 can be used to suppress the generation of parasitic plasma in one or more regions disposed between the susceptor 105 and surrounding chamber components (e.g., the shield 207). It should also be noted that gas from the processing region 121 can flow to the exhaust port 123 via a gap (or choke point) 305 between the suppressor 129 and the shield 207 lining one or more interior walls of the chamber 103. This is achieved via flow path 405 in Figure 4 As shown in the figure. Figure 2 , 3 , 5A, 5B, 6-8, 9A, and 9B describe some exemplary suppressors in more detail. However, it is generally noted that the suppressor 129 can be formed by a plurality of annular shielding rings, such as annular shielding rings 129_1, 129_2, ..., 129_n, where "n" is a natural number greater than or equal to two. The plurality of annular shielding rings may be spaced apart from each other (e.g., radially spaced apart from each other) to form an opening 303. In some embodiments, the suppressor 129 may be formed as a single body, wherein the opening 303 is formed as a passage through the single body. However, other embodiments are also contemplated. Parasitic Plasma Suppressor

[0085] Figure 5A Schematically depicts a perspective view of an annular shield ring according to some embodiments. Figure 5B Schematically illustrates a Figure 5A A partial plan view of the annular shielding structure. Figure 6 Schematically illustrates a Figure 5A A partial side view of the annular shielding ring. Figure 7 Schematically illustrated is a plan view of a plurality of concentrically aligned annular shield rings in accordance with some embodiments. Figure 8 Schematically illustrated is a plan view of an annular shielding structure according to some embodiments. Fig.9A and 9B Schematically illustrates a Figure 8 Partial side view of the annular shielding structure.

[0086] Reference Figure 1 , 2, 3, 5A, 5B, 6, and 7, the suppressor 129 may be defined as an annular shielding structure (or defined by an annular shielding structure). The annular shielding structure may include a plurality of annular shielding rings, such as annular shielding rings 129_1, 129_2, ..., 129_n (where "n" is a natural number greater than or equal to two). In some cases, the suppressor 129 may include three annular shielding rings, but the embodiment is not limited thereto. For example, the suppressor 129 may include two annular shielding rings or more than three annular shielding rings, such as four, five, six, seven, etc. annular shielding rings. In an embodiment, the annular shielding rings 129_1, 129_2, ..., 129_n may be formed of a dielectric material such as a ceramic material or include a dielectric material, such as aluminum oxide or aluminum nitride, but the embodiment is not limited thereto. In some cases, the annular shielding rings 129_1, 129_2, ..., 129_n may be formed of a first material such as a metal or a metal alloy (e.g., aluminum or an aluminum alloy) and coated with a second material such as a dielectric material. To this end, the material of each annular shield ring 129_1 , 129_2 , . . . , 129 — n may be the same as or different from at least one other annular shield ring among the annular shield rings 129_1 , 129_2 , . . . , 129 — n.

[0087] According to some embodiments, the annular shielding rings 129_1, 129_2, ..., 129_n may be concentrically aligned with the axis 701, which may be parallel to, for example, the Z-axis direction (in Figure 7 When supported by the base 105, the axis 701 may be aligned with (or substantially aligned with) or correspond to Figure 1 Thus, the axis 131 may be parallel to, for example, Figure 1 The central axis of the shield ring 129_1, 129_2, ..., 129_n may be similarly configured except for different sizes, but the embodiment is not limited thereto. Figure 5A , 5B , 6, and 7 describe some exemplary annular shielding rings in more detail.

[0088] Reference Figure 5A , 5B , 6, and 7, and continue to refer to Figure 1-3, the annular shielding ring 500 includes an upper surface 501, a lower surface 503, an inner surface 505, and an outer surface 507. A width 509 of the annular shielding ring 500 can extend between the inner surface 505 and the outer surface 507 along a radial direction, which can extend perpendicular to the central axis 511. A length 512 of the annular shielding ring 500 can extend between the upper surface 501 and the lower surface 503 in an axial direction, which can extend parallel to the central axis 511. In the assembled configuration of the system 100, the central axis 511 can coincide with (or substantially coincide with) the axis 131. In some cases, the annular shielding ring 500 includes a plurality of engagement features, such as a bayonet engagement feature 513, but the embodiment is not limited thereto. For example, the engagement features of the annular shielding ring 500 can be set as through holes, threaded through holes, blind holes, threaded blind holes, protrusions, pins, hooks, bolts, screws, studs, anchors, etc. It is also contemplated that a mixture of two or more different types of engagement features may be used in conjunction with the annular shield ring 500. For convenience, the engagement features of the annular shield ring 500 will hereinafter be assumed to be of the same type and described as bayonet-type engagement features 513.

[0089] like Figure 5A As shown in , the annular shield ring 500 includes four bayonet engagement features 513, two of which are identified, but embodiments are not limited thereto. For example, the annular shield ring 500 may include less than four bayonet engagement features, such as three bayonet engagement features, or may include more than four bayonet engagement features, such as five, six, etc. bayonet engagement features. According to some embodiments, the bayonet engagement features 513 may be circumferentially spaced apart from each other by an angular spacing 515, which may be determined according to Equation 1. For example, as Figure 5A As shown, the annular shield ring 500 includes four bayonet engagement features 513 , and therefore, the angular spacing 515 may be (or may be approximately) 90°, but embodiments are not limited thereto. For example, any suitable circumferential spacing of the bayonet engagement features 513 may be utilized. in: A = angular spacing between adjacent bayonet engagement features 513 n=the total number of bayonet engagement features 513 of the annular shield ring 500

[0090] As will be more clearly shown below, the bayonet engagement features 513 are configured to interface (or engage) with corresponding mating features of the annular support structure 209. The engagement between the bayonet engagement features of the annular shield rings 129_1, 129_2, ..., 129_n and the corresponding mating features of the annular support structure 209 can support the annular shield rings 129_1, 129_2, ..., 129_n around the outer perimeter of the base 105 in the chamber 103, and thus at least limit the displacement of the suppressor 129 along the axis 131. In some embodiments, the annular support structure 209 can be omitted, and the bayonet engagement features 513 can interface with the chamber 103, the base 105, the dielectric ring 203, the dielectric ring 205, and / or other suitable components of the system 100.

[0091] Reference Figure 6 , the bayonet engagement feature 513 is defined as a slot 601 extending through the annular shield ring 500. The slot 601 may be configured as a J-slot (eg, Figure 6 ), but the embodiments are not limited thereto. Therefore, the groove 601 may have any appropriate geometric configuration. In some embodiments, the groove 601 may include a first portion 601a, a second portion 601b, and a third portion 601c. The first portion 601a may include an opening 603 in the upper surface 501. The third portion 601c may include a mating (or stationary) surface 605. The second portion 601b may extend between the third portion 601c and the first portion 601a and communicate to couple the third portion 601c and the first portion 601a. ​​In some embodiments, the second portion 601b may include a protruding portion 607 having an impact surface 609, and the third portion 601c may include a distal surface 611. In addition, in some embodiments, the first portion 601a, the second portion 601b, and the third portion 601c may share a bottom surface 613.

[0092] refer to Figure 7, the annular shield rings 129_1, 129_2, ..., 129_n have inner diameters and outer diameters. For example, the annular shield ring 129_1 has an inner diameter 703 and an outer diameter 705, the annular shield ring 129_2 has an inner diameter 707 and an outer diameter 709, and the annular shield ring 129_n has an inner diameter 711 and an outer diameter 713. As shown, the outer diameter 713 is greater than the inner diameter 711, and the inner diameter 711 is greater than the outer diameter 709. The outer diameter 709 is greater than the inner diameter 707, and the inner diameter 707 is greater than the outer diameter 705. In addition, the outer diameter 705 is greater than the inner diameter 703, and the inner diameter 703 is greater than the maximum dimension (e.g., outer diameter) of an adjacent component (e.g., dielectric ring 205, dielectric ring 203, or base 105). At least it is obvious that the inner diameter 703 and the maximum dimension of the adjacent component (e.g., dielectric ring 205) may be greater than the maximum dimension (e.g., diameter) of the wafer 101. In some embodiments, the inner surface 505_n of the annular shield ring 129_n can be spaced apart from the outer surface of an adjacent component (e.g., the outer surface 205b of the dielectric ring 205) by a dimension 301, which can extend in a radial direction, for example, at a distance from the outer surface 505_n of the annular shield ring 129_n. Figure 3 The X-axis direction shown extends in a direction parallel to the X-axis direction.

[0093] As mentioned above, the opening 303 may be defined by the spacing between adjacent annular shield rings, such as the spacing between the annular shield ring 129_1 and the annular shield ring 129_2 and the spacing between the annular shield ring 129_2 and the annular shield ring 129_n. In this way, the maximum size (e.g., radial width) of the opening 303 may be defined by half (or approximately half) of the corresponding difference between the inner diameter and the outer diameter of the adjacent annular shield rings. For example, the first maximum size of the first opening 303a between the annular shield ring 129_1 and the annular shield ring 129_2 may be equal to (or substantially equal to) approximately half of the difference between the inner diameter 707 and the outer diameter 705. The second maximum size of the second opening 303b between the annular shield ring 129_2 and the annular shield ring 129_n may be equal to (or substantially equal to) approximately half of the difference between the inner diameter 711 and the outer diameter 709. In some embodiments, the first and second maximum sizes may be equal to (or substantially equal to) each other, but the embodiments are not limited thereto. For convenience of description, it will be assumed that the first and second maximum sizes are equal to each other and will be referred to as maximum size 307 (see Figure 3 ). It should also be noted that the maximum dimension 307 may be greater than or equal to the approximately maximum dimension 309 in the radial direction between the outer boundary of the suppressor 129 and the inner surface of the shield 207 or chamber 103 (see Figure 3 ). It is also contemplated that maximum dimension 307 may be greater than or equal to approximately dimension 301.

[0094] According to various embodiments, the maximum dimensions 307 and 309 may be configured not only to allow sufficient flow rate (or conductance) of gas from the processing region 121 to the exhaust port 123, but may also be configured to suppress the generation of parasitic plasma in one or more regions between the susceptor 105 and surrounding components (e.g., the chamber 103 and / or the shield 207). For example, during a plasma enhanced process performed via the system 100, the chamber 103 may form a vacuum enclosure that at least partially defines the processing region 121. To this end, the showerhead 113 may be used to provide one or more process gases (hereinafter referred to as "process gases") to the processing region 121 above the wafer 101 supported via the susceptor 105. The process gas may be heated and / or supplied with energy, such as RF energy from an electric field generated between the susceptor 105 and the showerhead 113, which at least partially causes molecules of the process gas to dissociate and form plasma in the processing region 121. Under these conditions, electrons, ions, excited neutral atoms, and molecules may be formed in the discharge and / or during electron bombardment with a solid surface. Thus, a number of secondary particles may be generated, including, for example, photons, electrons, atoms, and ions. These species carry energy from the processing region 121 in various forms, such as kinetic, electrical, and / or chemical forms, and are modified and reorganized due to their acceleration in the transition region between the undisturbed plasma of the processing region 121 and the adjacent surface (e.g., the upper surface of the wafer 101). The transition region is the plasma sheath 311, which establishes a net charge to balance the opposite charge on the surface adjacent to the undisturbed plasma of the processing region 121. In this way, the plasma sheath 311 maintains global current balance in such a way that, if sufficient space is not provided to form the plasma sheath 311, a plasma cannot generally be formed or maintained in the processing region 121. This general concept may be applied to the configuration of the opening 303 and the gap 305 of the suppressor 129. For example, dimension 301 and maximum dimensions 307 and 309 may be configured such that a plasma sheath is less likely to form near opening 303 , annular shield rings 129_1 , 129_2 , . . . , 129 — n , shield 207 , and / or inner walls of chamber 103 .

[0095] According to various embodiments, along a radial direction (e.g., along a direction parallel to Figure 3The dimension 301 (in the direction of the X-axis shown), the maximum dimension 307 of the opening 303, and the maximum dimension 309 of the gap 305 can be a multiple of the sheath thickness 313 of the plasma sheath 311. In some embodiments, the sheath thickness 313 can be between about 1 mm and about 3 mm, such as between about 1 mm and about 1.5 mm, such as between about 2.5 mm and about 3 mm, such as between about 1.25 mm and about 2.75 mm. It is also contemplated that the dimensions 301, the maximum dimension 307, and / or the maximum dimension 309 can be sized to be less than the sheath thickness 313, as long as a sufficient gas flow rate (or conductance) from the processing region 121 to the exhaust port 123 can be achieved.

[0096] As previously noted, the plasma sheath 311 is a layer of positive and neutral ions with a greater density that balances the opposite negative charge on the surface of the material adjacent to the plasma in the processing region 121. In this way, the light emission from the plasma sheath 311 can be weaker than the plasma in the processing region 121 because there are fewer electrons and therefore fewer excitation-relaxation collisions. Therefore, the plasma sheath 311 can be regarded as a dark boundary region (or space) that forms a potential barrier to prevent or reduce the diffusion of electrons from the plasma in the processing region 121. In some cases, one or more of the maximum dimensions 307 and 309 in the radial direction may be less than or equal to about twice the sheath thickness 313, but the embodiment is not limited thereto. In some cases, the maximum dimension 309 may be less than or equal to about the maximum dimension 307. In addition, the dimension 301 may be equal to (or substantially equal to) half of the sheath thickness 313, but the embodiment is not limited thereto. With this configuration, there may not be enough space for a plasma sheath to form near the opening 303, the annular shield rings 129_1, 129_2, ..., 129_n, the shield 207, and / or the inner wall of the chamber 103. However, it is worth noting that the sheath thickness 313 will depend on various processing conditions of the system 100, such as temperature, pressure, RF power, RF frequency, width of the processing region 121, etc. Therefore, the sheath thickness 313 can be reasonably approximated according to the Debye length associated with the plasma enhanced processing employed via the system 100. The Debye length can be reasonably approximated by Equation 2. in: λ D =Debye length ε0 = permittivity of free space k B=Boltzmann's constant q e = the charge of an electron T e = Temperature of electrons T i = Temperature of ions n e =Electron density n ij = density of atomic matter i, with positive ionic charge jq e

[0097] In addition, the opening 303 may have a width in the axial direction (eg, in the direction of Figure 2 As with the respective maximum dimensions of the openings 303 extending in the radial direction, the first minimum dimension and the second minimum dimension of the openings 303a and 303b in the axial direction may be equal (or substantially equal) to each other, but the embodiment is not limited thereto. For convenience of description, it will be assumed that the first minimum dimension and the second minimum dimension are equal to each other and will be referred to as Figure 2 303. The minimum dimension 211 of the opening 303 can be configured to promote energy depletion of radical (or charged) species escaping the processing region 121. For example, by appropriately sizing the minimum dimension 211 in the axial direction, a sufficient number of collisions may occur as the radical species traverse the flow path provided by the opening 303. These collisions gradually de-energize (or quench) the radical species to mitigate the ability of the plasma to survive near the opening 303, the annular shield rings 129_1, 129_2, ..., 129_n, the shield 207, and / or the chamber 103. The same is true for the flow path provided via the gap 305.

[0098] Although the upper surface 129a of the suppressor 129 (and thus the corresponding upper surfaces 501 of the annular shielding rings 129_1, 129_2, ..., 129_n) is Figure 2 and Figure 3 129_n) as being coplanar with a reference plane 317 including (e.g., tangent to) an upper surface 127a of the focus ring 127, but embodiments are not limited thereto. For example, the upper surface 129a of the suppressor 129 may be axially disposed above or below the reference plane 317. In some embodiments, the respective upper surfaces 501 of the annular shield rings 129_1, 129_2, ..., 129_n may gradually deviate from the reference plane 317 as the radial distance from the axis 131 increases (e.g., as the radial distance from the base 105 increases). For example, the annular shield ring 129_n may be axially disposed closer to the reference plane 317 than the annular shield ring 129_2. Fig. 17BSuch an embodiment is shown in . It is also conceivable that the opposite may be true. For example, the annular shield ring 129_n may be axially disposed farther away from the reference plane 317 than the annular shield ring 129_2, and the annular shield ring 129_2 may be axially disposed farther away from the reference plane 317 than the annular shield ring 129_1. In some embodiments, there may be any axial offset between the upper surfaces 501 of adjacent annular shield rings 129_1, 129_2, ..., 129_n. In addition, although the annular shield rings 129_1, 129_2, ..., 129_n are shown as having equal lengths 512 extending in the axial direction (see Figure 3 and 5A ), but the axial direction can be parallel to Figure 3 In the Z-axis direction, the embodiment is not limited thereto. In some embodiments, the corresponding lengths 512 of the annular shielding rings 129_1, 129_2, ..., 129_n may be different from each other. According to some embodiments, the difference between the corresponding lengths 512 of the annular shielding rings 129_1, 129_2, ..., 129_n may be arbitrary.

[0099] Although the annular shielding rings 129_1, 129_2, ..., 129_n have been described as separate structures, it is also conceivable that the annular shielding rings 129_1, 129_2, ..., 129_n can form features of an integral structure. For example, the annular shielding rings 129_1, 129_2, ..., 129_n are formed as a single body (or part) using one or more additive manufacturing techniques. In this way, when manufacturing the integral structure, one or more connecting portions may be formed on the annular shielding rings 129_1, 129_2, ..., 129_n and / or between the annular shielding rings 129_1, 129_2, ..., 129_n. For example, one or more connecting portions may extend radially between adjacent annular shielding rings in the annular shielding rings 129_1, 129_2, ..., 129_n, but the embodiment is not limited thereto. In some examples, the integral structure can be additively manufactured by direct laser ceramic sintering. As another example, the monolithic structure can be formed using direct metal laser sintering and, in some cases, coated with a dielectric material, such as a ceramic. It is also contemplated that the monolithic structure can be machined from a solid feedstock (e.g., a billet material) and, in some embodiments, coated with another material (e.g., a dielectric material).

[0100] In some embodiments, the parasitic plasma suppressor 129 can be configured as a single annular shield structure (or "structure") 800, such as Figure 8 and Fig.9AAs shown, instead of being formed by multiple annular shield rings (e.g., annular shield rings 129_1, 129_2, ..., 129_n). Structure 800 includes an upper surface 801, a lower surface 803, an inner surface 805, and an outer surface 807. The width 809 of structure 800 in the radial direction can extend between the inner surface 805 having an inner diameter 811 and the outer surface 807 having an outer diameter 813. The radial direction extends perpendicular to the central axis 815, which is Figure 8 Width 809 may correspond to half of the difference between inner diameter 811 and outer diameter 813.

[0101] Similar to annular shield ring 500, structure 800 includes a plurality of bayonet engagement features, such as bayonet engagement feature 817, which can interface with corresponding mating features of annular support structure 209. In this manner, bayonet engagement feature 817 can be structurally similar to at least one of the annular shield rings 500. Figure 5A , 5B and 6 described bayonet-type engagement feature 513. Figure 8 As seen in FIG. 8 , structure 800 includes four bayonet-type engagement features 817, two of which have been identified, but embodiments are not limited thereto. For example, structure 800 may include less than four bayonet-type engagement features, such as three bayonet-type engagement features, or may include more than four bayonet-type engagement features, such as five, six, seven, etc. bayonet-type engagement features.

[0102] According to various embodiments, structure 800 includes a plurality of openings extending longitudinally between upper surface 801 and lower surface 803, such as opening 819. Opening 819 can be configured not only to achieve a sufficient flow rate (or flow conductance) of gas from processing region 121 to exhaust port 123, but also to suppress the generation of parasitic plasma in one or more regions disposed between pedestal 105 and surrounding components (e.g., chamber 103, shield 207, etc.). In this way, opening 819 can correspond to Figure 2 and Figure 3 303 depicted in FIG. Thus, opening 819 can have a maximum dimension (e.g., maximum diameter) 821 that can be sized similarly to maximum dimension 307 to reduce the likelihood that sufficient space is available for the formation of a plasma sheath (and thereby a parasitic plasma) near opening 819, structure 800, shield 207, and / or chamber 103. Additionally, opening 819 can have a minimum dimension 823 in an axial direction extending parallel to central axis 815, such as Fig.9A Minimum dimension 823 may be similar in size to minimum dimension 211 to facilitate energy dissipation of radical species escaping processing region 121 and traveling through at least one flow path provided via opening 819 to exhaust port 123 .

[0103] In some embodiments, the openings 819 may be axially inclined / declined at an angle 825 relative to the lower surface 803 and the upper surface 801 of the structure 800, such that the respective leading edges 819a of the openings 819 are circumferentially offset from the respective trailing edges 819b of the openings 819, as shown in FIG. Fig. 9B As shown. In this way, adjacent openings 819 may overlap each other at least partially in the axial direction, but the embodiment is not limited thereto. Regardless of whether the openings 819 overlap each other at least partially in the axial direction, the corresponding path length of the openings 819 can be increased to a minimum dimension 827 without increasing the thickness of the structure 800 in the axial direction. It is also conceivable that the openings 819 axially tilted / deflected at an angle 825 can enable the corresponding path length of the openings 819 to be maintained at a minimum dimension 823, but enable the thickness of the structure 800 in the axial direction to be reduced. In some embodiments, the openings 819 may be radially tilted / deflected relative to the lower surface 803 and the upper surface 801 of the structure 800 or both radially tilted / deflected and axially tilted / deflected. In either case, the size of the minimum dimension 827 may be at least similar to the minimum dimension 211 to facilitate the energy depletion of the free radical species that escape the processing region 121 and reach the exhaust port 123 through at least one flow path provided by the openings 819.

[0104] Although the opening 819 is shown in plan view as having a circular cross-section, the embodiment is not limited thereto. For example, the opening 819 may have any suitable cross-sectional configuration, such as an oval, elliptical, triangular, quadrilateral, etc. cross-sectional configuration. In some embodiments, the opening 819 may have an egg-shaped or free-form cross-sectional configuration in plan view. In any case, the maximum dimension in a plane perpendicular to the central axis 815 of such an opening may still correspond to the maximum dimension 821, and the minimum dimension in the axial direction may still correspond to the minimum dimension 823 or 827. That is, the maximum dimension of the opening of such an alternative configuration in a plane perpendicular to the central axis 815 may or may not extend in a radial direction relative to the central axis 815. Support structure

[0105] As previously mentioned, in some embodiments, suppressor 129 may be supported in chamber 103 by base 105 via annular support structure 209 . Fig.10 Schematically depicts a perspective view of an annular support structure according to some embodiments. Fig.11 Schematically illustrates a Fig.10 Bottom view of a portion of the annular support structure. Fig.12 Schematically illustrates a Fig.10 A cross-sectional view of the annular support structure taken along section line 12-12.

[0106] Reference Figure 10-12 , annular support structure 209 includes an upper surface 1001, a lower surface 1003, an inner surface 1005, and an outer surface 1007. Upper surface 1001, lower surface 1003, inner surface 1005, and outer surface 1007 together define body 1201. Body 1201 includes inner protrusion 1203. In some cases, inner protrusion 1203 extends circumferentially inward from inner surface 1005 toward central axis 1009. Therefore, inner protrusion 1203 can extend along the entire circumference of inner surface 1005, but embodiments are not limited thereto. For example, in some cases, inner protrusion 1203 can be divided into a plurality of inner protrusions spaced apart from each other circumferentially along central axis 1009. Inner protrusion 1203 may include a mating (or stationary) surface 1205, which in some embodiments is configured to abut against one or both of upper surfaces 203a and 205a of dielectric rings 203 and 205 when annular support structure 209 is supported by base 105. Figure 2 and Figure 3 As shown in FIG. 1 , the mating surface 1205 abuts against the upper surfaces 203a and 205a of the dielectric rings 203 and 205. It should also be noted that when the annular support structure 209 is supported by the base 105, the inner surface 1005 can abut against the outer surface 205b of the dielectric ring 205, as shown in FIG. Figure 3 In the case where both dielectric rings 203 and 205 are omitted, mating surface 1205 and inner surface 1005 may abut against corresponding surfaces of base 105 , but embodiments are not limited thereto.

[0107] According to various embodiments, the body 1201 can have an inner dimension (e.g., inner diameter) 1013 that is greater than or equal to the outer boundary dimension of the dielectric ring 205. In addition, the body 1201 can have an outer dimension (e.g., outer diameter) 1015 that can be less than or equal to, for example, the inner diameter 703. It should also be noted that the inner protrusion 1203 can include a distal end 1207 that can face and / or abut against the outer surface of the focus ring 127 when the annular support structure 209 is supported by the base 105, but the embodiments are not limited thereto. In addition, although the upper surface 1001 of the annular support structure 209 is Figure 2 and Figure 3 1001 is shown as being coplanar with reference plane 317, but embodiments are not limited thereto. For example, upper surface 1001 may be disposed axially above or below reference plane 317. In this manner, when annular support structure 209 is supported by base 105, upper surface 1001 may be disposed coplanar with or axially offset from one or more of upper surface 129a of suppressor 129 and upper surface 127a of focus ring 127.

[0108] According to some embodiments, the annular support structure 209 may include a plurality of mating features, such as a mating engagement feature 1011, which is configured to interface with the bayonet engagement feature 513 of the annular shield ring 129_1, 129_2, ..., 129_n or the bayonet engagement feature 817 of the structure 800. Fig.10 As shown, the annular support structure 209 includes four mating engagement features 1011, two of which are identified, but the embodiment is not limited thereto. For example, the annular support structure 209 may include less than four mating engagement features, such as three mating engagement features, or may include more than four mating engagement features, such as five, six, seven mating engagement features, etc.

[0109] The mating engagement features 1011 may define respective protrusions extending from the outer surface 1007 in respective radial directions relative to the central axis 1009. Fig.12 As shown, the exemplary mating engagement feature 1011 includes a mating (or stationary) surface 1209, which in some embodiments is configured to abut against a mating surface 605 of a corresponding bayonet engagement feature of the suppressor 129 when the suppressor 129 is supported by the annular support structure 209. For example, the mating surface 1209 of one of the mating engagement features 1011 may abut against a mating surface 605 of one or more bayonet engagement features 513 in the annular shield ring 129_1, 129_2, ..., 129_n or a corresponding mating surface of one of the bayonet engagement features 817 of the structure 800. The mating engagement feature 1011 also includes a distal end 1211.

[0110] According to some embodiments, the annular support structure 209 may be formed of a dielectric material or include a dielectric material, such as a ceramic material (e.g., aluminum oxide or aluminum nitride), but the embodiments are not limited thereto. In some cases, the annular support structure 209 may be formed of a first material such as a metal or a metal alloy (e.g., aluminum or an aluminum alloy) and coated with a second material such as a dielectric material. In addition, the material (multiple materials) of the annular support structure 209 may be the same or different from the material (multiple materials) of the annular shielding rings 129_1, 129_2, ..., 129_n, the structure 800, and / or at least one dielectric ring 203 and 205.

[0111] Although the mating engagement features 1011 of the annular support structure 209 have been described as corresponding protrusions, the embodiments are not limited thereto. For example, when the engagement features of the annular shielding rings 129_1, 129_2, ..., 129_n or the structure 800 are configured alternatively, the mating engagement features of the annular support structure 209 may be configured to dock or function accordingly in association therewith. For example, the engagement features of the annular shielding rings 129_1, 129_2, ..., 129_n may be set as through holes, and the engagement features of the annular support structure 209 may be provided as through holes, threaded through holes, threaded holes, compression nuts and / or similar features. In this way, screws, bolts and / or any other suitable fastening mechanisms may be used to detachably couple the annular shielding rings 129_1, 129_2, ..., 129_n and the annular support structure 209 to each other. As another example, when the annular shielding rings 129_1, 129_2, ..., 129_n are formed as an integral structure, the integral structure may have an engagement feature corresponding to a protrusion extending from the inner surface 505 of the annular shielding ring 129_1, similar to the way in which the mating engagement feature 1011 extends from the outer surface 1007 of the annular support structure 209. Therefore, the annular support structure 209 may have a mating engagement feature corresponding to a groove configured similar to the groove 601. In yet another example, the annular shielding ring 129_1 may have an engagement feature corresponding to a protrusion extending from its inner surface 505, similar to the way in which the mating engagement feature 1011 extends from the outer surface 1007 of the annular support structure 209. In this way, the annular shielding rings 129_2, 129_n and the annular support structure 209 may have a mating engagement feature corresponding to a groove configured similar to the groove 601. In some embodiments, the mating engagement features 1011 of the annular support structure 209 may be integrated as part of the base 105, the shield 207, and / or the chamber 103, such that the annular support structure 209 may be omitted. It is also contemplated that alternative hardware and / or support structures may be utilized to support the suppressor 129 in the chamber 103.

[0112] Although the annular shielding rings 129_1, 129_2, ..., 129_n and the annular support structure 209 have been described as separate structures, it is also contemplated that the annular shielding rings 129_1, 129_2, ..., 129_n and the annular support structure 209 may be formed as a single unitary structure. For example, one or more additive manufacturing techniques may be used to form the annular shielding rings 129_1, 129_2, ..., 129_n as a single body (or piece), wherein the innermost annular shielding ring (e.g., the annular shielding ring 129_n) includes an inner protrusion 1203 extending circumferentially inwardly from its inner surface 505, similar to the way the inner protrusion 1203 extends circumferentially inwardly from the inner surface 1005 of the annular support structure 209. In addition, the annular shielding rings 129_1, 129_2, ..., 129_n may not include the bayonet-type engagement feature 513. On the contrary, when manufacturing the integral structure, one or more connecting portions may be formed on and / or between the annular shielding rings 129_1, 129_2, ..., 129_n. For example, one or more connecting portions may extend radially between adjacent annular shielding rings in the annular shielding rings 129_1, 129_2, ..., 129_n, but the embodiment is not limited thereto.

[0113] An exemplary parasitic plasma suppressor assembly positioned between a plurality of annular shield rings (eg, annular shield rings 129_1 , 129_2 , . . . , 129_n), annular support structure 209 , and a retaining structure 1500 that may be supported by a pedestal 105 in a chamber 103 will now be described in greater detail. Parasitic Plasma Suppressor Components

[0114] Fig.13A Schematically depicts a plan view of a portion of an annular support structure and a partial assembly between a plurality of annular shield rings, according to some embodiments. Fig. 13B Schematically depicts a plan view of a portion of an assembly between an annular support structure, a plurality of annular shield rings, and a retaining structure according to some embodiments. Fig.14 Schematically illustrates a Fig. 13B A partial side view of an assembly. Fig.15 Schematically depicted is a perspective view of a retention structure according to some embodiments. Fig.16 Schematically depicts a partial side view of a portion of an assembly between two annular shield rings and a retaining structure, according to some embodiments.

[0115] Reference Figure 2 , 3, 5A, 5B, 6, 7, 10-12, 13A, 13B, and 14-16, the parasitic plasma suppressor assembly may include a suppressor 129, an annular support structure 209, and one or more retaining structures 213. For ease of description, it will be assumed that the suppressor 129 includes annular shielding rings 129_1, 129_2, and 129_n, but the following description may be similarly applied in conjunction with the structure 800. In some embodiments, in order to assemble the annular shielding rings 129_1, 129_2, and 129_n together, the annular shielding rings 129_1, 129_2, and 129_n may be similar to Figure 7 The configuration shown in FIG. 1 is supported on a horizontal (or substantially horizontal) surface. Although the annular shielding rings 129_1, 129_2 and 129_n are Figure 7 701, but this configuration need not be the case, and can be achieved by the assembly of the suppressor 129, the annular support structure 209, and the one or more retaining structures 213. That is, the annular shielding rings 129_1, 129_2, and 129_n can be configured so that the annular shielding ring 129_2 is disposed between the outermost annular shielding ring (e.g., the annular shielding ring 129_n) and the innermost annular shielding ring (e.g., the annular shielding ring 129_1). For convenience of description, it will be assumed that the annular shielding rings 129_1, 129_2, and 129_n are disposed on the surface and are concentrically aligned around the axis 701.

[0116] According to various embodiments, the annular shield rings 129_1, 129_2, and 129_n may each include a set of corresponding bayonet engagement features 513 configured to interface with the mating engagement features 1011 of the annular support structure 209. For example, the set of bayonet engagement features of the annular shield ring 129_n may include the following: Figure 7 Thus, to facilitate assembly with the annular support structure 209, the annular shield rings 129_1, 129_2, and 129_n may also be configured on the surface such that the openings 603 of the corresponding groups of the bayonet engagement features 513 are radially (or substantially radially) aligned with each other. For example, the bayonet engagement features 513_11, 513_21, and 513_n1 of the annular shield rings 129_1, 129_2, and 129_n may be as follows: Figure 7 A portion of a group 715_1 of bayonet engagement features is shown radially (or substantially radially) aligned with each other. Similar configurations and alignments may exist in the bayonet engagement features 513 of other groups of bayonet engagement features of the annular shield rings 129_1, 129_2, and 129_n, such as groups 715_2, 715_3, and 715_4.

[0117] With the above configuration between the annular shield rings 129_1, 129_2, and 129_n, the mating engagement features 1011 of the annular support structure 209 can be inserted into the openings 603 of the corresponding bayonet engagement features 513 of the annular shield rings 129_1, 129_2, and 129_n. For example, the annular support structure 209 can be configured over the annular shield rings 129_1, 129_2, and 129_n so that the central axis 1009 of the annular support structure 209 is aligned with the axis 701 of the annular shield rings 129_1, 129_2, and 129_n. The annular support structure 209 can be translated in the axial direction along the axis 701 until, for example, the mating engagement feature 1011_1 of the annular support structure 209 is received in the openings 603_11, 603_21, and 603_n1 of the annular shield rings 129_1, 129_2, respectively, and abuts against the bottom surface 613 of the bayonet engagement features 513_11, 513_21, and 513_n1, as shown in FIG. Fig.13A As shown. In some embodiments, when configured in this partially assembled state, the outer surface 1007 of the annular support structure 209 can face (and, in some cases, abut against) the inner surface 505 of the annular shield ring 129_1. In addition, the distal end 1211 of the mating engagement feature 1011 can extend radially beyond the outer surface 507 of the annular shield ring 129_n, but the embodiment is not limited to this. For example, the distal end 1211 of the mating engagement feature 1011 can be flush with the outer surface 507 of the annular shield ring 129_n or radially inset from the outer surface 507.

[0118] To engage the annular support structure 209 with the annular shield rings 129_1, 129_2, and 129_n, the annular support structure 209 may be rotated about the central axis 1009 in a first rotational direction (e.g., a clockwise direction about the central axis 1009) until, for example, the mating engagement feature 1011 abuts against the distal end surface 611 of the corresponding bayonet engagement feature 513 of the annular shield rings 129_1, 129_2, and 129_n. For example, the annular support structure 209 may be rotated about the central axis 1009 until, for example, the front surface 1301 of the mating engagement feature 1011_1 abuts against the distal end surfaces 611_11, 611_21, and 611_n1 of the bayonet engagement features 513_11, 513_21, and 513_n1 of the annular shield rings 129_1, 129_2, and 129_n, as shown in FIG. Fig. 13B shown.

[0119] Once the annular support structure 209 is engaged with the annular shield rings 129_1, 129_2, and 129_n, the mating engagement features 1011 of the annular support structure 209 may be at least partially disposed in the third portions 601c of the bayonet engagement features 513_11, 513_21, and 513_n1 of the annular shield rings 129_1, 129_2, and 129_n. In order to limit (or at least reduce) relative rotation between the annular support structure 209 and the annular shield rings 129_1, 129_2, and 129_n in a second rotational direction opposite to the first rotational direction (e.g., counterclockwise around the central axis 1009), one or more retaining structures (or inserts) 213 may be inserted into at least a portion of the corresponding space in the bayonet engagement features 513 that is not occupied by the mating engagement features 1011. Prior to describing this configuration, the following description will be made in conjunction with the embodiment of the present invention. Fig.15 and 16 An example retention structure is described in more detail.

[0120] refer to Fig.15 and 16 , the retaining structure 1500 may include a body portion 1501 having an upper surface 1503, a lower surface 1505, and a plurality of side surfaces, such as side surfaces 1507, 1509, 1511, and 1513. In some embodiments, the side surfaces 1507 and 1509 may be opposite to each other in a first direction DR1, and the side surfaces 1511 and 1513 may be opposite to each other in a second direction DR2. The upper surface 1503 may be spaced apart from the lower surface 1505 in a third direction DR3. In addition, the upper surface 1503 may be inclined from the side surface 1509 to the side surface 1507 at an angle 1515, but the embodiment is not limited thereto. For example, the upper surface 1503 may not be inclined or may alternatively be configured in any suitable manner.

[0121] According to some embodiments, retaining structure 1500 may further include a protrusion 1517 extending a distance 1519 from a lower portion of side surface 1513 along second direction DR2. Protrusion 1517 may have a dimension 1521 along first direction DR1 and a dimension 1523 along third direction DR3. In some cases, lower surface 1505 of body portion 1501 may also correspond to a lower surface of protrusion 1517. In addition, side surfaces 1507 and 1509 of body portion 1501 may correspond to corresponding side surfaces of protrusion 1517. Protrusion 1517 may also include a plurality of mating surfaces, such as mating surfaces 1525 and 1527.

[0122] In some implementations, the retaining structure 1500 includes a plurality of protrusions, such as protrusion 1529, extending from the lower surface 1505 in the third direction DR3 by a dimension 1601. The protrusion may also have a dimension 1531 in the second direction DR2 and a dimension 1603 in the first direction DR1. According to some embodiments, the dimension 1603 may be less than or equal to about the maximum dimension 307. In addition, the protrusion 1529 may have a rounded surface 1605 that interfaces with the lower surface 1505, and the protruding portion 1517 may have a rounded surface 153 that interfaces with the side surface 1513. However, embodiments are not limited thereto.

[0123] Refer again Figure 2 , 3 , 5A, 5B, 6, 7, 10-12, 13A, 13B, and 14-16, one or more retaining structures 213 can be inserted into at least portions of the corresponding spaces of the bayonet engagement features 513 that are not occupied by the mating engagement features 1011 when the annular support structure 209 is engaged with the annular shield rings 129_1, 129_2, and 129_n. For example, the retaining structure 213_1 can be radially inserted into the corresponding first portions 601a and second portions 601b of the corresponding bayonet engagement features 513_11, 513_21, and 513_n1 of the bayonet engagement feature group 715_1 of the annular shield rings 129_1, 129_2, and 129_n. During this insertion process, the lower surface 1505 of the retaining structure 213_1 can be axially spaced apart from the corresponding bottom surfaces 613 of the bayonet engagement features 513_11, 513_21, and 513_n1 until, for example, the side surface 1509 of the retaining structure 1500_1 abuts against the outer surface 1007 of the annular support structure 209. At this point, the retaining structure 213_1 can be lowered in the axial direction until the lower surface 1505 of the retaining structure 213_1 abuts against the bottom surfaces 613 of the bayonet engagement features 513_11, 513_21, and 513_n1. To help facilitate this process, the dimension 1401 of the second portion 601b of the bayonet engagement feature 513 can be greater than or equal to the sum of the dimensions 1523 and 1601 of the retaining structure 213_1.

[0124] As from Figure 2 , 3, 7, and 16, it can be appreciated that the lowering of the retaining structure 213_1 in the axial direction can enable the protrusions 1529 to be inserted into the openings 303a and 303b, respectively, to help maintain the size of the maximum dimension 307 between adjacent annular shield rings, such as between the annular shield rings 129_2 and 129_n. Inserting the corresponding protrusions 1529 into the corresponding openings 303a and 303b can also align the annular shield rings 129_1, 129_2, and 129_n concentrically (or substantially concentrically) around the axis 701. In addition, in this assembled state, the mating surface 1527 of the retaining structure 213_1 can abut the tail surface 1403 of the mating engagement feature 1011_1, such as Fig.14 This may limit (or at least reduce) relative rotation between the annular support structure 209 and the annular shield rings 129_1 , 129_2 , and 129_n along the second rotational direction.

[0125] In some cases, the corresponding impact surface 609 (see Figure 6 ) can also be used to reduce the relative rotation between the annular support structure 209 and the annular shielding rings 129_1, 129_2 and 129_n along the second rotation direction. In addition, although the upper surface 1503 is Figure 2 , Figure 3 and Fig.14 129_1, 129_2, and 129_n, but the embodiment is not limited thereto. For example, the upper surface 1503 may extend beyond one or more of the upper surfaces 501 of the annular shield rings 129_1, 129_2, and 129_n, or may be recessed from one or more of the upper surfaces 501 of the annular shield rings 129_1, 129_2, and 129_n. In these cases, when the upper surfaces 501 of the annular shield rings 129_1, 129_2, and 129_n gradually deviate from the reference plane 317 (an example of which is shown in FIG. 129_2), the upper surface 1503 may be aligned with the upper surface 501 of the annular shield rings 129_1, 129_2, and 129_n, but the embodiment is not limited thereto. For example, the upper surface 1503 may extend beyond one or more of the upper surfaces 501 of the annular shield rings 129_1, 129_2, and 129_n, or may be recessed from one or more of the upper surfaces 501 of the annular shield rings 129_1, 129_2, and 129_n. Fig. 17B ), the inclination of the upper surface 1503 may generally correspond to a gradual offset of the upper surface 501.

[0126] According to various embodiments, once the parasitic plasma suppressor assembly is assembled, the parasitic plasma suppressor assembly can be disposed above the pedestal 105 such that the axis 701 is aligned (or substantially aligned) with the axis 131. The parasitic plasma suppressor assembly can be lowered in an axial direction along the axis 131 until, for example, the mating surface 1205 of the annular support structure 209 abuts against at least one of the upper surfaces 203a and 205a of the dielectric rings 203 and 205. In this supported state, the mating surface 1209 of the mating engagement feature 1011 can abut the mating surface 605 of the bayonet engagement feature 513. In these circumstances, when the distal end 1211 of the mating engagement feature 1011 of the annular support structure 209 extends beyond the outer surface 507 of the annular shield ring 129-n, the distal end 1211 can still be spaced apart from the inner surface of the chamber 103 or the shroud 207 (when present). Efficiency of the system for parasitic plasma suppressor

[0127] Fig.17A and 17B Parasitic plasma generation in a conventional substrate processing system and a substrate processing system according to some embodiments is compared. To evaluate the efficacy of an exemplary suppressor, a substrate processing system was established for PECVD of silicon nitride, which was associated with various power levels for generating plasma in a processing region similar to processing region 121. During plasma generation, images were captured using a digital camera through a window into the chamber of the substrate processing system to visually determine whether parasitic plasma was generated outside the corresponding processing region. The window was adapted with a metal grid (or perforated screen) to shield RF radiation. However, these grids can also cause vignetting effects throughout the captured images. Even so, it was observed that conventional substrate processing systems (such as those without parasitic plasma suppressors) without parasitic plasma suppressors had a high plasma generation rate. Fig.17A ) allows a parasitic plasma to be generated in a region 1701 disposed at least between a pedestal 1703 and surrounding chamber components (e.g., a shield 1705). In contrast, a substrate processing system (e.g., Fig. 17B 1703 and surrounding chamber components (e.g., shield 1705). To help Fig.17A and Fig. 17B 1703, suppressor 1707, and showerhead 1709 have been roughly outlined in white. It is also observed that, at power inputs to the grounded showerhead 1709 and pedestal 1703 (or electrodes associated with pedestal 1703) ranging from 800 watts (W) to 1300 W, the substrate processing system including suppressor 1707 enables silicon nitride deposition rates that are approximately 300 angstroms / minute higher than silicon nitride deposition rates associated with conventional substrate processing systems. Multi-station processing tools

[0128] Fig.18 A multi-station processing tool is schematically illustrated according to some embodiments.

[0129] In some embodiments, the multi-station processing tool 1800 may include an inbound load lock 1803 and an outbound load lock 1805, one or both of which may include a plasma source and / or an ultraviolet (UV) source. A robot 1807 at atmospheric pressure is configured to move a box loaded with wafers through a pod 1809 to the inbound load lock 1803 through an atmospheric port 1811. The wafer 101 is placed on a pedestal 1813 in the inbound load lock 1803 by the robot 1807, the atmospheric port 1811 is closed, and then the inbound load lock 1803 is pumped. In the case where the inbound load lock 1803 includes a remote plasma source, the wafer 101 can be exposed to a remote plasma treatment in the inbound load lock 1803 before being introduced into the processing chamber 1815. Further, the wafer 101 can also be heated in the inbound load lock 1803, for example to remove moisture and / or adsorbed gases. Next, the chamber transfer port 1817 leading to the processing chamber 1815 is opened, and another robot 1819 places the wafer 101 on a susceptor at the first station in the reactor (shown in the reactor) for processing. Fig.18 The embodiments in the drawings include a load lock, but it should be understood that in some embodiments, the wafer 101 can be directly fed into the processing station.

[0130] like Fig.18 As shown in , the processing chamber 1815 includes four processing stations, numbered from 1 to 4. Each station has a temperature-controlled base (e.g., the temperature-controlled base 1821 of station 1) and a gas pipeline inlet. It should be understood that in some cases, each processing station may have different or multiple uses. For example, in some embodiments, the processing station can switch between chemical vapor deposition (CVD) and PECVD process modes. In another example, a deposition operation (e.g., a PECVD operation) can be performed in one station, and exposure to UV radiation for UV curing can be performed in another station. In some cases, deposition and UV curing can be performed in the same station. Further, although the processing chamber 1815 shown includes four stations, the embodiment is not limited thereto. For example, the processing chamber 1815 may have any suitable number of stations, such as five stations or more stations, or three stations or less stations.

[0131] As previously mentioned, the multi-station processing tool 1800 may include a wafer handling system (e.g., a robot 1819 including a star fork 1801) for transferring and / or positioning wafers within the processing chamber 1815. In some embodiments, the wafer handling system may transfer wafers between various processing stations and / or between processing stations and load locks. However, it is contemplated that any suitable wafer handling system may be employed, such as, for example, wafer carousels, other wafer handling robots, etc. Further, the multi-station processing tool 1800 may include (or otherwise be coupled to) a system controller 1823 for controlling process conditions and hardware states of the multi-station processing tool 1800. The system controller 1823 may include one or more memory devices 1825, one or more mass storage devices 1827, and one or more processors 1829. Each processor 1829 may include a central processing unit (CPU) or computer, analog and / or digital input / output connections, a stepper motor controller board, etc.

[0132] In some embodiments, the system controller 1823 controls every activity of the multi-station processing tool 1800. For example, the system controller 1823 may execute system control software 1831 stored in the mass storage device 1827, loaded into the memory device 1825, and executed by the processor 1829. Alternatively, the control logic may be hard-coded in the system controller 1823. Application-specific integrated circuits (ASICs), programmable logic devices (such as field programmable gate arrays or FPGAs), and / or the like may be used for these purposes. In the following discussion, regardless of whether "software" or "code" is used in any case, functionally equivalent hard-coded logic may be used in that case. The system control software 1831 may include instructions for controlling the timing, mixture of gases, gas flow rates, chamber and / or station pressures, chamber and / or station temperatures, wafer temperatures, target power levels, RF power levels, substrate pedestals, chuck and / or pedestal positions, and other parameters of a particular process performed by the multi-station processing tool 1800. The system control software 1831 may be configured in any suitable manner. For example, various process tool component subroutines or control objects may be written to control the operation of the process tool components used to perform various process tool processes.The system control software 1831 may be encoded in any suitable computer readable programming language.

[0133] In some embodiments, the system control software 1831 may include input / output control (IOC) sequence instructions for controlling the various parameters described above. In some embodiments, other computer software and / or programs stored on the mass storage device 1827 and / or the memory device 1825 associated with the system controller 1823 may be employed. Examples of programs or program segments for this purpose include substrate positioning programs, process gas control programs, pressure control programs, heater control programs, cooler control programs, and plasma control programs.

[0134] The substrate positioning program may include program code for processing tool components used to load and position the wafer 101 on the pedestal 1821 and control the spacing between the wafer 101 and other components of the multi-station processing tool 1800.

[0135] The process gas control program may include code for controlling gas composition (e.g., silicon-containing gas, oxygen-containing gas, nitrogen-containing gas, diluent (or inert) gas, etc.) and flow rate, and optionally for flowing gas into one or more process chambers to stabilize the pressure in the process chambers prior to deposition. The pressure control program may include code for controlling the pressure in the process station by adjusting, for example, a throttle valve in the exhaust system of the process station, the flow of gas into the process station, and / or the like.

[0136] The heater control program may include code for controlling the flow of current to a heating unit for heating a pedestal (e.g., pedestal 1821) and / or a showerhead (e.g., showerhead 113) of the processing chamber 1815 and thereby heating the wafer 101. Additionally or alternatively, the heater control program may control the delivery of a heat transfer gas (e.g., helium) to a gas distributor and thereby to the wafer 101.

[0137] The chiller control program may include code for controlling the flow rate of a conductive cooling fluid through a cooling unit used to extract heat from a base (e.g., base 1821) and / or a nozzle (e.g., nozzle 113) of processing chamber 1815 and thereby transfer such thermal energy to, for example, a waste heat capture, storage, recovery and / or disposal system.

[0138] A plasma control program may include code for setting RF power levels applied to process electrodes in one or more process stations according to various embodiments.

[0139] The pressure control program may include code for maintaining the pressure within the reaction chamber according to various embodiments.

[0140] In some embodiments, there may be a user interface associated with the system controller 1823. The user interface may include a display screen, a graphical software display of apparatus and / or process conditions, and a user input device (e.g., a pointing device, keyboard, touch screen, microphone, etc.).

[0141] In some embodiments, the parameters adjusted by the system controller 1823 may be related to process conditions. Non-limiting examples include process gas composition and flow rate, temperature, pressure, plasma conditions (e.g., RF bias power level), pressure, temperature, etc. These parameters may be provided to the user in the form of a recipe that may be input using a user interface.

[0142] Signals for monitoring the process may be provided from various process tool sensors through analog and / or digital input connections of the system controller 1823. Signals for controlling the process may be output on analog and / or digital output connections of the multi-station process tool 1800. Non-limiting examples of process tool sensors that may be monitored include mass flow controllers, pressure sensing gauges (e.g., manometers), thermocouples, etc. Appropriately programmed feedback and control algorithms may be used with the data from these sensors to maintain process conditions.

[0143] The system controller 1823 may provide program instructions for implementing one or more of the above processes. The program instructions may control various process parameters, such as direct current (DC) power level, RF bias power level, pressure, temperature, etc. The instructions may control these parameters according to various embodiments to operate the deposition of the film stack of the stress compensation layer.

[0144] The system controller 1823 will typically include one or more memory devices and one or more processors configured to execute the instructions so that the apparatus will perform methods according to some embodiments. In some cases, a machine-readable medium containing instructions for controlling process operations according to various embodiments may be coupled to the system controller 1823.

[0145] In some implementations, the system controller 1823 may be part of a system that may be part of the above examples. Such a system may include a semiconductor processing device that includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (e.g., wafer pedestals, gas flow systems, thermal management systems, etc.). The systems discussed above may be integrated with electronic devices for controlling their operation before, during, and / or after the processing of semiconductor wafers or substrates. The electronic device may be referred to as a "controller" that may control various components or subcomponents of one or more systems. For example, depending on the processing requirements and / or system type, the system controller 1823 may be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), valve operation, light source control for radiant heating, pressure settings, vacuum settings, power settings, RF generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools or chambers and other transfer tools and / or load locks connected or docked with a specific system. In this manner, the system controller 1823 may be configured to control the various actuators and motors of the backside wafer handling system, particularly between systems.

[0146] In a broad sense, the system controller 1823 can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, and / or similar operations. The integrated circuit may include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions may be instructions sent to the system controller 1823 in the form of various individual settings (or program files) that define operating parameters for performing a particular process on or for a semiconductor wafer or system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more (kinds of) layers, materials, metals, oxides, silicon, silicon oxides, surfaces, circuits, die of a wafer, and the like.

[0147] In some implementations, the system controller 1823 may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the system controller 1823 may be in the "cloud" or may be all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance criteria for multiple manufacturing operations, change parameters of a current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the system controller 1823 can be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., the processes and controls described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0148] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0149] As described above, depending on one or more processing steps to be performed by the tool, the system controller 1823 can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, and / or tools used in the transport of materials for transporting wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility. Additional and / or Alternative Embodiments

[0150] Unless otherwise specified, the embodiments shown should be understood as providing exemplary features of the varying details of some embodiments. Therefore, unless otherwise specified, the features, components, modules, layers, films, regions, aspects, structures, etc. (hereinafter individually or collectively referred to as "elements" or "elements") of the various icons can be combined, separated, interchanged and / or rearranged in other ways without departing from the teachings of the present invention.

[0151] The terms used herein are for the purpose of describing some embodiments and are not intended to be limiting. As used herein, the singular forms "a, an" and "the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should be understood that the phrases "for each <item> of the one or more <items>", "each <item> of the one or more <items>" and / or the like, if used herein, include both a single item group and a plurality of item groups, that is, the meaning of using the phrase "for each of..." is that it is used in the programming language to refer to each item in the entire group of items referred to. For example, if the group of items referred to is a single item, "each" will only refer to the single item (despite the fact that the dictionary definition of "each" is often defined as "each of two or more things"), and does not mean that there must be at least two of these items. Similarly, the term "set" or "subset" itself should not be considered to necessarily include multiple items-it should be understood that a set or subset may contain only one member or multiple members (unless otherwise indicated by the context). The terms "comprises", "comprising", "includes" and / or "comprising" (when used in this specification) specify the presence of the features, integers, steps, operations, components, parts, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups thereof. It should be noted that as used herein, the terms "substantially", "approximately" and other similar terms are used as approximate terms rather than terms of degree, and are therefore used to account for the inherent deviations in measuring, calculating and / or providing values ​​understood by those of ordinary skill in the art. Accordingly, unless otherwise stated, the term "substantially" as used herein means within 5% of a reference value. For example, substantially perpendicular means within ±5% of parallel.

[0152] The use of cross hatching and / or shadows in the accompanying drawings is generally provided to make the boundaries between adjacent elements clear. Therefore, the presence or absence of cross hatching or shadows does not convey or indicate any preference or requirement for a specific material, material properties, size, ratio, commonality between the elements shown, and / or any other features, attributes, characteristics, etc. of the elements, unless otherwise specified. Further, in the accompanying drawings, the size and relative size of the elements may be exaggerated for clarity and / or description purposes. Therefore, the size and relative size of each element are not necessarily limited to the size and relative size shown in the figures. When the embodiment can be implemented in different ways, a specific process sequence can be performed differently from the described sequence. For example, two processes described in succession can be performed substantially simultaneously or in an order opposite to the described sequence.

[0153] When an element (e.g., a layer) is referred to as being "on," "connected to," or "coupled to" another component, it may be directly on, directly connected to, or directly coupled to, another element, or there may be at least one intermediate element. However, when an element is referred to as being "directly on," "directly connected to," or "directly coupled to," another element, there are no intermediate elements. Other terms and / or phrases (if used herein to describe the relationship between elements) should be interpreted in a similar manner, such as "between" versus "directly between," "adjacent" versus "directly adjacent," "on" versus "directly on," etc. Further, the term "connected" may refer to physical, electrical, and / or fluidic connections. To this end, for the purposes of the present invention, the phrase "fluidly connected" is used with respect to volumes, plenums, holes, etc. that can be interconnected to form a fluidic connection, similar to the phrase "electrically connected" being used with respect to components that are connected together to form an electrical connection. The phrase "fluid interposition" (if used) may be used to refer to a component, volume, plenum or hole that is fluidically connected to at least two other components, volumes, plenums or holes, such that a fluid flowing from one of these other components, volumes, plenums or holes to another of these other components, volumes, plenums or holes flows through the "fluid interposition" component before reaching the other of these components, volumes, plenums or holes. For example, if a pump is fluidly interposed between a container and an outlet, the fluid flowing from the container to the outlet flows through the pump before reaching the outlet. The phrase "fluid proximity" (if used) may be used to refer to the placement of a fluid element relative to another fluid element, such that there is no potential structure between the two elements that may potentially interrupt the flow of fluid between the two fluid elements without fluid interposition. For example, in a flow path in which a first valve, a second valve, and a third valve are sequentially disposed along the flow path, the first valve places fluid proximity to the second valve, the second valve places fluid proximity to both the first valve and the third valve, and the third valve places fluid proximity to the second valve.

[0154] For the purpose of the present invention, "at least one of X, Y ... and Z" and "at least one selected from the group consisting of X, Y ... and Z" may be interpreted as only X, only Y ..., only Z, or any combination of two or more of X, Y ... and Z, such as XYZ, XYY, YZ and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0155] Although the terms "first", "second", "third", etc. may be used herein to describe various elements, these elements should not be limited to these terms. These terms are used to distinguish one element from another. Therefore, without departing from the teachings of the present invention, the first element discussed below may be referred to as the second element. For this reason, the use of these identifiers (such as "first element") should not be understood to imply or inherently imply that there must be another instance (such as "second element"). Further, any ordinal number (if any) used in the present invention and the appended claims, such as (a), (b), (c)... or (1), (2), (3)... or the like, should be understood as not expressing any particular order or sequence, except where such order or sequence is explicitly indicated. For example, if there are three steps labeled (i), (ii) and (iii), it should be understood that, unless otherwise specified, these steps can be performed in any order (or even simultaneously, if there are no other restrictions). For example, if step (ii) involves processing the element established in step (i), step (ii) can be considered to occur at a point after step (i). In a similar manner, if step (i) involves processing an element created in step (ii), the opposite should be understood.

[0156] Spatially relative terms, such as "beneath," "below," "under," "lower," "above," "upper," "over," "higher," "side" (e.g., as "sidewall"), and the like, may be used herein for descriptive purposes and, therefore, to describe the spatial relationship of one element to at least one other element as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as being "below" or "beneath" other elements or features would be oriented as being "above" or "above" the other elements or features. Thus, the term "below" may encompass both above and below orientations. Furthermore, the device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and the spatially relative descriptive terms used herein are interpreted accordingly.

[0157] The term "between" as used herein and when used with a range of values ​​is understood to include (unless otherwise indicated) both the starting and ending values ​​of the range. For example, between 1 and 5 is understood to include the numbers 1, 2, 3, 4, and 5, rather than just the numbers 2, 3, and 4.

[0158] As used herein, the term "operably connected" is understood to refer to a state in which two components and / or systems are connected (directly or indirectly) such that, for example, at least one component or system can control the other. For example, a controller may be described as being operably connected to (or operably connected to) a resistive heating unit, which includes the controller being connected to a sub-controller of the resistive heating unit, the resistive heating unit being electrically connected to a relay that is configured to controllably connect or disconnect the resistive heating unit to a power source capable of providing an amount of power (which is capable of powering the resistive heating unit to produce the desired degree of heating). The controller itself may not be able to directly supply such power to the resistive heating unit due to the currents involved, but it should be understood that the controller is still operably connected to the resistive heating unit.

[0159] As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should be understood that the phrases "for each <item> of the one or more <items>," "each <item> of the one or more <items>," and / or the like, if used herein, include both single and multiple groups of items, i.e., the phrase "for each of" is used in the sense that it is used in a programming language to refer to each item in the entire group of items being referred to. For example, if the group of items being referred to is a single item, then "each" would refer only to that single item (despite the fact that the dictionary definition of "each" is often defined as meaning "each of two or more things"), and does not mean that there must be at least two of those items. Similarly, the terms "set" or "subset" by themselves should not be taken to necessarily include a plurality of items—it should be understood that a set or subset may contain only one member or multiple members (unless the context indicates otherwise). In addition, the terms "comprises", "including", "includes" and / or "comprising" (when used in this specification) specify the presence of stated features, integers, steps, operations, elements, parts, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups thereof.

[0160] Various embodiments are described herein with reference to cross-sectional views, isometric views, perspective views, plan views, and / or exploded views, which are schematic illustrations of idealized embodiments and / or intermediate structures. Therefore, variations in the shapes illustrated are expected due to, for example, manufacturing techniques and / or tolerances. Therefore, the embodiments disclosed herein should not be construed as limited to the specific illustrated shapes of the regions, but rather include deviations in shapes due to, for example, manufacturing. To this end, the regions illustrated in the figures may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and are therefore not intended to be limiting.

[0161] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. Terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted as an idealized or overly formal meaning unless explicitly defined in this document.

[0162] According to the practice in the art, some embodiments are described and shown in the accompanying drawings from the perspective of functional blocks, units and / or modules. It should be understood by those skilled in the art that these blocks, units and / or modules are physically implemented by electronic (or optical) circuits, such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, wiring connections and the like, which can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. In the case where the blocks, units and / or modules are implemented by microprocessors or other similar hardware, they can be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and can be optionally driven by firmware and / or software. It is also expected that each block, unit and / or module can be implemented by dedicated hardware, or as a combination of dedicated hardware that performs certain functions and processors that perform other functions (e.g., one or more programmed microprocessors and related circuits). In addition, each block, unit and / or module of some embodiments can be physically divided into two or more interacting and discrete blocks, units and / or modules without departing from the concept of the present invention. Further, the blocks, units and / or modules of some embodiments may be physically combined into more complex blocks, units and / or modules without departing from the teachings of the present invention.

[0163] Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways to implement the processes, systems and devices of the disclosed embodiments. Accordingly, the embodiments are to be considered illustrative rather than restrictive, and the embodiments are not to be limited to the details given herein.

[0164] It is further understood that the above disclosure (although focused on a particular example embodiment or embodiments) is not limited to the examples discussed, but is also applicable to similar variations and mechanisms, and these similar variations and mechanisms are also considered to be within the scope of the present invention. For the avoidance of any doubt, it should also be understood that the above disclosure is at least directed to the following numbered implementations, as well as other implementations that are obvious from the above disclosure.

[0165] Implementation 1: A device configured to mitigate parasitic plasma generation associated with a plasma enhanced process, the device comprising an annular shielding structure. The annular shielding structure comprises a first inner surface, a first outer surface, a first upper surface, a first lower surface, and a plurality of openings. The first outer surface is opposite to the first inner surface in a radial direction. The first upper surface extends between the first inner surface and the first outer surface. The first lower surface extends between the first inner surface and the first outer surface. The first lower surface is opposite to the first upper surface in an axial direction transverse to the radial direction. The openings extend longitudinally between the first upper surface and the first lower surface. The openings respectively comprise a maximum dimension in a plane perpendicular to the axial direction, the maximum dimension being less than or equal to approximately twice the thickness of a plasma sheath associated with the plasma enhanced process.

[0166] Implementation 2: The device according to Implementation 1, wherein the maximum dimension extends along the radial direction.

[0167] Implementation 3: The device according to any one of Implementation 1 or Implementation 2, wherein the opening further comprises a minimum dimension in the axial direction or in a direction transverse to the axial direction, respectively.

[0168] Implementation 4: The device according to any one of Implementations 1 to 3, wherein the annular shielding structure comprises a plurality of annular shielding rings, the annular shielding rings being spaced apart from each other by the maximum dimension in the radial direction, so that the opening is defined by the spaces between the annular shielding rings.

[0169] Implementation 5: The device according to any one of Implementations 1 to 3, wherein the annular shielding structure is formed as a unitary body, and the opening is defined as a through hole extending through the unitary body.

[0170] Implementation 6: The device according to any one of Implementations 1 to 3 further comprises an annular support structure. The annular support structure comprises a second inner surface; and a second outer surface, the second outer surface being located between the first inner surface and the second inner surface along the radial direction, so that the annular shielding structure surrounds the annular support structure. The annular shielding structure and the annular support structure are detachably coupled to each other.

[0171] Implementation 7: The device according to Implementation 6, wherein the annular shielding structure and the annular supporting structure are detachably coupled to each other via a bayonet-type joint.

[0172] Implementation 8: The device according to Implementation 7, wherein the bayonet joint includes a plurality of protrusions and a plurality of grooves. The protrusions extend radially from one of the first inner surface and the second outer surface. The grooves are defined in the other of the first inner surface and the second outer surface. The grooves are respectively configured to: receive a corresponding protrusion in the protrusion in the first groove portion in response to the relative translation between the annular shielding structure and the annular support structure along the axial direction; and receive the corresponding protrusion in the second groove portion connected and coupled to the first groove portion in response to the relative rotation between the annular shielding structure and the annular support structure in the first rotation direction around the axis extending along the axial direction.

[0173] Implementation 9: The device according to Implementation 8, wherein the plurality of protrusions includes at least three protrusions.

[0174] Implementation 10: The device according to Implementation 8, wherein the plurality of protrusions includes at least four protrusions.

[0175] Implementation 11: An apparatus according to any one of Implementations 8 to 10, wherein the annular shielding structure includes a plurality of annular shielding rings, the annular shielding rings being spaced apart from each other by the maximum dimension in the radial direction, so that the opening is defined by the spacing between the annular shielding rings, and the annular shielding rings respectively include corresponding groups of the plurality of grooves.

[0176] Implementation 12: The device according to Implementation 11, wherein the upper surfaces of the corresponding annular shielding rings are offset from each other in the axial direction.

[0177] Implementation 13: An apparatus according to Implementation 12, wherein the upper surfaces of the annular shielding ring are offset from each other so that the distance between the upper surface of the annular shielding ring and a reference plane increases with increasing distance from the first inner surface, and the reference plane includes the upper surface of the upper surface that is closest to the first inner surface.

[0178] Implementation 14: The device according to any one of Implementations 11 to 13, wherein in the engaged state of the bayonet joint, the corresponding group of corresponding grooves are configured to receive the same corresponding protrusions of the plurality of protrusions.

[0179] Implementation 15: An apparatus according to any one of Implementations 11 to 14, wherein one or more retaining structures are configured to limit relative rotation between the annular shielding structure and the annular support structure in a second rotational direction around the axis, the second rotational direction being opposite to the first rotational direction.

[0180] Implementation 16: The device according to Implementation 15, wherein at least one of the grooves is further configured to receive the retaining structure in the first groove portion of the at least one groove and the third groove portion of the at least one groove in response to the relative translation between the retaining structure in the one or more retaining structures and the at least one groove in the radial direction, and the third groove portion of the at least one groove is communicatively coupled between the first groove portion of the at least one groove and the second groove portion of the at least one groove. In the engaged state of the annular shielding structure and the annular support structure and the engaged state of the retaining structure and the at least one groove, the retaining structure is configured to retain the corresponding protrusion in the second groove portion of the at least one groove.

[0181] Implementation 17: The device according to Implementation 16, wherein the retaining structure comprises a main body portion; a first protrusion extending from a first side wall of the main body portion; and a plurality of second protrusions extending from the main body portion, the first protrusion, or a lower surface of the main body portion and the first protrusion. In the engaged state of the retaining structure and the at least one slot, the main body portion is disposed in the first slot portion of the at least one slot; the first protrusion is disposed in one or both of the second slot portion of the at least one slot and the third slot portion of the at least one slot; and the second protrusions are disposed in corresponding openings of the openings in the annular shielding structure.

[0182] Implementation 18: The device according to any one of implementations 8 to 10 further comprises one or more retaining structures. At least one of the grooves is further configured to receive the retaining structure in the first groove portion of the at least one groove and the third groove portion of the at least one groove in response to the relative translation between a retaining structure of the one or more retaining structures and the at least one groove in the radial direction. The third groove portion of the at least one groove connects the first groove portion of the at least one groove and the second groove portion of the at least one groove. In the engaged state of the annular shielding structure and the annular support structure and the engaged state of the retaining structure and the at least one groove, the retaining structure is configured to retain the corresponding protrusion in the second groove portion of the at least one groove and limit the relative rotation between the annular shielding structure and the annular support structure in the second rotation direction around the axis. The second rotation direction is opposite to the first rotation direction.

[0183] Implementation 19: The device according to any one of Implementations 6 to 18, wherein the annular support structure further comprises at least one inner protrusion extending from the second inner surface toward the central axis of the annular support structure. The central axis extends along the axial direction. The at least one inner protrusion comprises a third upper surface; and a third lower surface, which is opposite to the third upper surface in the axial direction.

[0184] Implementation 20: The device of Implementation 19, wherein the at least one inner protrusion extends circumferentially around at least a portion of the periphery of the annular support structure.

[0185] Implementation 21: The device according to any one of Implementation 19 or Implementation 20, further comprising a processing chamber, the processing chamber comprising at least one sidewall; and a base supported in the processing chamber. The base comprises an outer boundary surface. In the radial direction, the annular shielding structure is arranged between the outer boundary surface of the base and the at least one sidewall.

[0186] Implementation 22: The apparatus according to Implementation 21, further comprising a showerhead supported in the process chamber so that the showerhead faces the susceptor in the axial direction, and the showerhead is configured to distribute one or more process gases in a region above the susceptor.

[0187] Implementation 23: The device according to any one of Implementation 21 or Implementation 22 further includes at least one dielectric ring surrounding the outer boundary surface of the base. The at least one dielectric ring includes a fourth inner surface facing the outer boundary surface of the base in the radial direction; a fourth outer surface opposite to the fourth inner surface in the radial direction; a fourth upper surface extending between the fourth inner surface and the fourth outer surface; and a fourth lower surface extending between the fourth inner surface and the fourth outer surface. The fourth lower surface is opposite to the fourth upper surface in the axial direction. In the radial direction, the annular shielding structure is disposed between the at least one dielectric ring and the at least one side wall.

[0188] Implementation 24: The device according to Implementation 23, wherein the first inner surface and the fourth outer surface are separated in a plane perpendicular to the axial direction by a dimension that is less than or approximately equal to the thickness of the plasma sheath associated with the plasma enhanced process.

[0189] Implementation 25: The device according to any one of Implementation 23 or Implementation 24 further includes a focus ring disposed on the outer peripheral portion of the upper surface of the base. The focus ring includes a fifth inner surface; a fifth outer surface that is opposite to the fifth inner surface in the radial direction; a fifth upper surface that extends between the fifth inner surface and the fifth outer surface; and a fifth lower surface that extends between the fifth inner surface and the fifth outer surface. The fifth lower surface is opposite to the fifth upper surface in the axial direction. In a plan view, at least a portion of the fourth upper surface is adjacent to the fifth upper surface in the radial direction.

[0190] Implementation 26: The device according to Implementation 25, wherein the first upper surface is arranged below a reference plane including the fifth upper surface.

[0191] Implementation 27: The device according to any one of Implementation 25 or Implementation 26, wherein the fourth upper surface is arranged at a reference plane including the fifth lower surface or below the reference plane.

[0192] Implementation 28: The device according to any one of Implementations 25 to 27, wherein the third lower surface abuts against the fourth upper surface.

[0193] Implementation 29: The device according to any one of Implementations 25 to 28, wherein the second inner surface abuts against the fourth outer surface.

[0194] Implementation 30: The device according to any one of Implementations 21 to 29, wherein the first outer surface is spaced apart from the at least one side wall.

[0195] Implementation 31: An apparatus according to Implementation 30, wherein the plurality of protrusions extend radially from the second outer surface; the outermost boundary surface of at least one of the plurality of protrusions is disposed closer to the at least one side wall than the first outer surface; and the outermost boundary surface of the at least one protrusion is spaced apart from the at least one side wall.

[0196] Implementation 32: The device according to Implementation 31 further comprises a shield, which is laid on an inner surface of the at least one side wall. In the radial direction, the annular shielding structure is arranged between the outer boundary surface of the base and the shield; and the outermost boundary surface of the at least one protrusion is spaced apart from the shield.

[0197] Implementation 33: The device according to any one of Implementations 21 to 30, further comprising a shield lining the inner surface of the at least one side wall. In the radial direction, the annular shielding structure is disposed between the outer boundary surface of the base and the shield.

[0198] Implementation 34: The device of any one of Implementation 32 or Implementation 33, wherein the shield comprises aluminum.

[0199] Implementation 35: The apparatus according to any one of Implementations 21 to 34, wherein the processing chamber includes an exhaust port configured to exhaust gas associated with the plasma enhanced process. The gas includes byproduct gas, unreacted process gas, or byproduct gas and unreacted process gas. The opening is configured to allow the gas to flow from a first region above the susceptor to the exhaust port via a second region adjacent to the first region, the second region being spaced apart from the susceptor in the radial direction; and to suppress the generation of plasma in the second region.

[0200] Implementation 36: The apparatus of any one of Implementations 1 to 35, wherein in connection with the plasma enhanced process, the opening is further configured to quench a flow of one or more high energy species passing therethrough.

[0201] Implementation 37: The apparatus according to any one of Implementations 21 to 35, wherein the susceptor is configured to support a substrate in the process chamber, the substrate comprising a maximum dimension in a direction perpendicular to the axial direction. A maximum dimension between opposing portions of the first inner surface in the direction perpendicular to the axial direction is greater than the maximum dimension of the substrate.

[0202] Implementation 38: The device according to any one of Implementations 6 to 37, wherein the first inner surface is adjacent to the second outer surface.

[0203] Implementation 39: The device according to any one of Implementations 6 to 38, wherein the maximum dimension of the annular shielding structure in the axial direction is greater than the maximum dimension of the annular support structure in the axial direction.

[0204] Implementation 40: The device according to any one of Implementations 1 to 39, wherein the annular shielding structure comprises a ceramic material.

[0205] Implementation 41: The device according to any one of Implementations 1 to 40, wherein the annular support structure comprises a ceramic material.

Claims

1. An apparatus configured to mitigate parasitic plasma generation associated with a plasma enhanced process, the apparatus comprising: The annular shielding structure comprises: a first inner surface; a first outer surface, which is opposite to the first inner surface in a radial direction; a first upper surface extending between the first inner surface and the first outer surface; a first lower surface extending between the first inner surface and the first outer surface, the first lower surface being opposite to the first upper surface in an axial direction transverse to the radial direction; as well as a plurality of openings extending longitudinally between the first upper surface and the first lower surface, Wherein the openings each include a maximum dimension in a plane perpendicular to the axial direction that is less than or equal to approximately two times a thickness of a plasma sheath associated with the plasma enhanced process.

2. The device according to claim 1, wherein: The maximum dimension extends along the radial direction; and The opening also comprises a minimum dimension in the axial direction or in a direction transverse to the axial direction, respectively.

3. The apparatus of claim 1, wherein the annular shielding structure comprises a plurality of annular shielding rings spaced apart from each other by the maximum dimension in the radial direction such that the opening is defined by the spaces between the annular shielding rings.

4. The device according to claim 1, further comprising: An annular support structure comprising: a second inner surface; and a second outer surface located between the first inner surface and the second inner surface in the radial direction so that the annular shielding structure surrounds the annular support structure, The annular shielding structure and the annular supporting structure are detachably coupled to each other.

5. The apparatus of claim 4, wherein the annular shielding structure and the annular support structure are detachably coupled to each other via a bayonet-type joint.

6. The device of claim 5, wherein the bayonet joint comprises: a plurality of projections extending radially from one of the first inner surface and the second outer surface; as well as a plurality of grooves defined in the other of the first inner surface and the second outer surface, the grooves being respectively configured to: receiving a corresponding one of the protrusions in a first slot portion in response to relative translation between the annular shield structure and the annular support structure in the axial direction; as well as In response to relative rotation between the annular shield structure and the annular support structure in a first rotational direction about an axis extending along the axial direction, the corresponding protrusion is received in a second slot portion communicatively coupled to the first slot portion. The device of claim 6 , wherein the plurality of protrusions comprises at least three protrusions.

8. The device according to claim 6 or 7, wherein: The annular shield structure includes a plurality of annular shield rings spaced apart from each other by the maximum dimension in the radial direction such that the opening is defined by the spaces between the annular shield rings; and The annular shield rings respectively include corresponding groups of the plurality of grooves.

9. The device of claim 8, wherein the upper surfaces of the annular shielding ring are offset from each other in the axial direction so that the distance between the upper surface of the annular shielding ring and a reference plane increases as the distance from the first inner surface increases, and the reference plane includes the upper surface of the upper surface that is closest to the first inner surface.

10. The device of claim 8, wherein in the engaged state of the bayonet joint, corresponding slots in the corresponding set are configured to receive identical corresponding ones of the plurality of protrusions.

11. The device according to claim 8, further comprising: One or more retaining structures are configured to limit relative rotation between the annular shield structure and the annular support structure in a second rotational direction about the axis, the second rotational direction being opposite to the first rotational direction.

12. The device according to claim 11, wherein: At least one of the grooves is further configured to receive the retaining structure in the first groove portion of the at least one groove and a third groove portion of the at least one groove in response to relative translation between a retaining structure of the one or more retaining structures and the at least one groove in the radial direction, the third groove portion of the at least one groove being communicatively coupled between the first groove portion of the at least one groove and the second groove portion of the at least one groove; as well as In an engaged state of the annular shielding structure and the annular support structure and an engaged state of the retaining structure and the at least one slot, the retaining structure is configured to retain the corresponding protrusion in the second slot portion of the at least one slot.

13. The device according to claim 12, wherein: The holding structure comprises: The main part; a first protrusion extending from a first side wall of the body portion; as well as a plurality of second protrusions extending from a lower surface of the body portion, the first protrusion, or the body portion and the first protrusion; and In the engaged state of the retaining structure and the at least one groove: The body portion is disposed in the first slot portion of the at least one slot; The first protrusion is disposed in one or both of the second groove portion of the at least one groove and the third groove portion of the at least one groove; and The second protrusions are disposed in corresponding ones of the openings in the annular shield structure.

14. The device according to claim 6 or 7, further comprising: one or more retaining structures, in: At least one of the grooves is further configured to receive the retaining structure in the first groove portion of the at least one groove and a third groove portion of the at least one groove in response to relative translation between a retaining structure of the one or more retaining structures and the at least one groove in the radial direction, the third groove portion of the at least one groove connecting the first groove portion of the at least one groove and the second groove portion of the at least one groove; In an engaged state between the annular shielding structure and the annular support structure and an engaged state between the retaining structure and the at least one groove, the retaining structure is configured to retain the corresponding protrusion in the second groove portion of the at least one groove and restrict relative rotation between the annular shielding structure and the annular support structure in a second rotation direction about the axis; and The second rotation direction is opposite to the first rotation direction.

15. The device according to claim 4, wherein: The annular support structure further comprises at least one inner protrusion extending from the second inner surface toward a central axis of the annular support structure, the central axis extending along the axial direction; The at least one inner protrusion comprises: third upper surface; as well as a third lower surface that is opposite to the third upper surface in the axial direction; and the at least one inner protrusion extends circumferentially around at least a portion of the periphery of the annular support structure.

16. The device according to claim 15, further comprising: a processing chamber comprising at least one sidewall; a susceptor supported within the processing chamber, the susceptor comprising an outer boundary surface; and a showerhead supported within the processing chamber so that the showerhead faces the susceptor in the axial direction, the showerhead being configured to distribute one or more process gases in an area above the susceptor, in, In the radial direction, the annular shielding structure is disposed between the outer boundary surface of the base and the at least one side wall.

17. The device according to claim 16, further comprising: at least one dielectric ring surrounding the outer boundary surface of the pedestal, the at least one dielectric ring comprising: a fourth inner surface facing the outer boundary surface of the base in the radial direction; a fourth outer surface, which is opposite to the fourth inner surface in the radial direction; a fourth upper surface extending between the fourth inner surface and the fourth outer surface; as well as a fourth lower surface extending between the fourth inner surface and the fourth outer surface, the fourth lower surface being opposite to the fourth upper surface in the axial direction, in: In the radial direction, the annular shielding structure is disposed between the at least one dielectric ring and the at least one side wall; and The first inner surface is spaced apart from the fourth outer surface in the plane perpendicular to the axial direction by a dimension that is less than or approximately equal to a thickness of the plasma sheath associated with the plasma enhanced process.

18. The device according to claim 17, further comprising: a focusing ring disposed on an outer peripheral portion of an upper surface of the base, the focusing ring comprising: fifth inner surface; a fifth outer surface, which is opposite to the fifth inner surface in the radial direction; a fifth upper surface extending between the fifth inner surface and the fifth outer surface; as well as a fifth lower surface extending between the fifth inner surface and the fifth outer surface, the fifth lower surface being opposite to the fifth upper surface in the axial direction, in: In a plan view, at least a portion of the fourth upper surface is adjacent to the fifth upper surface in the radial direction; The first upper surface is disposed below a reference plane including the fifth upper surface; The fourth upper surface is disposed at a reference plane including the fifth lower surface or below the reference plane; The third lower surface abuts against the fourth upper surface; the second inner surface abuts against the fourth outer surface; and The first outer surface is spaced apart from the at least one sidewall.

19. The apparatus of claim 18, wherein: the plurality of projections extending radially from the second outer surface; An outermost boundary surface of at least one of the plurality of protrusions is disposed closer to the at least one side wall than the first outer surface; and The outermost boundary surface of the at least one protrusion is spaced apart from the at least one sidewall.

20. The device according to claim 19, further comprising: a shield lining an inner surface of said at least one side wall, in: In the radial direction, the annular shielding structure is disposed between the outer boundary surface of the base and the shield; and The outermost boundary surface of the at least one protrusion is spaced apart from the shroud.

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