Inductor, preparation method thereof and passive device

Abstract

The invention provides an inductor and a preparation method thereof, belongs to the field of passive integrated devices, and can be applied to large-broadband scenes such as bias junction circuits, amplifier circuits and radio over fiber communication systems. The inductor comprises a dielectric substrate, P first connecting via holes, Q second connecting via holes, P first connecting electrodes, Q second connecting electrodes, M first conductive structures and N second conductive structures, wherein the P first connecting via holes and the Q second connecting via holes penetrate through the dielectric substrate in the thickness direction; wherein one first connection electrode is located in one first connection via hole, one second connection electrode is located in one second connection via hole, the P first connection via holes are arranged side by side in the first direction, the Q second connection via holes are arranged in one-to-one correspondence with the P first connection via holes in the second direction, and the M first conductive structures are arranged side by side in the first direction, the N second conductive structures are arranged side by side in the first direction, and the lengths of at least part of the adjacent first conductive structures in the second direction are monotonically increased or monotonically decreased.

Description

Technical Field

[0001] The present invention belongs to the technical field of passive integrated devices, and in particular relates to an inductor and a preparation method thereof, and a passive device. Background Art

[0002] When designing microwave and millimeter wave active circuits, choke inductors are generally used to isolate the circuit from the power supply for microwave isolation. In order to reduce the impact of DC bias on microwave performance, the choke inductor needs to have high performance and wide bandwidth. The existing three-dimensional inductor based on glass substrate (TGV) is similar to the traditional spiral inductor. The diameter of the spacer inductor is consistent, which will produce self-resonance. When the frequency exceeds the self-resonance frequency, the inductor will lose its inductance and behave as capacitance, so it cannot be well applied in large broadband scenarios.

[0003] Based on the above problems, the inventor proposed an inductor, whose aperture in the axial direction or the vertical axial direction of the inductor is variable, which improves the overall aperture change rate of the inductor, reduces the inductance value of the inductor, and thus improves the bandwidth of the inductor, and can be better applied to large-bandwidth scenarios such as bias junction circuits, amplifier circuits, and optical wireless communication systems. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. The technical solution adopted to solve the technical problem of the present invention is to provide an inductor with a wide bandwidth.

[0005] In a first aspect, an embodiment of the present disclosure provides an inductor, comprising: a dielectric substrate having P first connection vias and Q second connection vias penetrating along the thickness direction thereof; the P first connection vias are arranged side by side, the Q second connection vias are arranged side by side, and one first connection via and one second connection via are arranged correspondingly in the second direction; P and Q are both positive integers greater than or equal to 2; P first connection electrodes and Q second connection electrodes, one first connection electrode is arranged in one first connection via, and one second connection electrode is arranged in one second connection via; M first conductive structures and N second conductive structures are arranged in a dielectric substrate; A conductive structure, wherein M first conductive structures are sequentially arranged side by side along a first direction, N second conductive structures are sequentially arranged side by side along the first direction, a first end of an i-th second conductive structure is connected to a second end of an i-th first conductive structure via a first connecting electrode, and a second end of an i-th second conductive structure is connected to a first end of an i+1-th first conductive structure via a second connecting electrode, so as to form an inductor coil structure; M and N are both positive integers greater than or equal to 2, and i is 1 to N; wherein, among the M first conductive structures, at least some of the multiple first conductive structures that are adjacently arranged have lengths in the second direction that monotonically increase or decrease.

[0006] Preferably, the length of each of the first conductive structures in the second direction first increases monotonically and then decreases monotonically along the first direction; or, the length of each of the first conductive structures in the second direction first decreases monotonically and then increases monotonically along the first direction.

[0007] Preferably, the dielectric substrate has a first surface and a second surface arranged opposite to each other along its thickness direction, a line connecting the centers of each of the first connecting electrodes in the thickness direction of the dielectric substrate is parallel to a plane where the first surface is located, and a line connecting the centers of each of the second connecting electrodes in the thickness direction of the dielectric substrate is on the same horizontal plane as a line connecting the centers of each of the first connecting electrodes in the thickness direction of the dielectric substrate.

[0008] Preferably, the length of each of the first connecting electrodes along the thickness direction of the dielectric substrate is equal to the thickness of the dielectric substrate; or, the length of each of the first connecting electrodes along the thickness direction of the dielectric substrate monotonically increases or decreases along the first direction, and the length of each of the first connecting electrodes along the thickness direction of the dielectric substrate is not greater than the thickness of the dielectric substrate.

[0009] Preferably, when the length of each first connecting electrode in the thickness direction of the dielectric substrate monotonically increases or decreases along the first direction, the length of each first connecting via in the thickness direction of the dielectric substrate monotonically increases or decreases along the first direction.

[0010] The dielectric substrate has a first surface and a second surface arranged opposite to each other along the thickness direction thereof, a line connecting the centers of each of the first connecting electrodes in the thickness direction of the dielectric substrate is parallel to a plane where the first surface is located, and a line connecting the centers of each of the second connecting electrodes in the thickness direction of the dielectric substrate is on the same horizontal plane as a line connecting the centers of each of the first connecting electrodes in the thickness direction of the dielectric substrate.

[0011] Preferably, it further comprises a first protective layer located on a side of the layer where the first conductive structure is located away from the dielectric substrate, and a second protective layer located on a side of the layer where the second conductive structure is located away from the dielectric substrate.

[0012] Preferably, it further includes Q-1 third connecting vias, P-1 fourth connecting vias, P-1 fifth connecting vias, Q-1 sixth connecting vias, P-1 first interlayer insulating layer, and P-1 second interlayer insulating layer; wherein,

[0013] Each of the first conductive structures is located on the first surface side, and a first interlayer insulating layer is provided between the layers where the adjacent first conductive structures are located, and for the first conductive structure with the first interlayer insulating layer provided between the first surface, a first end of the first conductive structure is connected to the second connection electrode through the third connection via hole penetrating the first interlayer insulating layer, and a second end is connected to the first connection electrode through the fourth connection via hole penetrating the first interlayer insulating layer; each of the first interlayer insulating layers is arranged in sequence along a direction away from the dielectric substrate;

[0014] Each of the second conductive structures is located on the second surface side, and a second interlayer insulating layer is provided between the layers where the adjacent second conductive structures are located, and for the second conductive structure with the second interlayer insulating layer provided between the second surface, a first end of the second conductive structure is connected to the first connection electrode through the fifth connection via hole penetrating the second interlayer insulating layer, and a second end is connected to the second connection electrode through the sixth connection via hole penetrating the second interlayer insulating layer; each of the second interlayer insulating layers is arranged in sequence along a direction away from the dielectric substrate;

[0015] The jth third connection via hole penetrates through the first j-th interlayer insulating layer and is arranged corresponding to the first end of the i+1th second connection electrode, the jth fourth connection via hole penetrates through the first j-th interlayer insulating layer and is arranged corresponding to the first end of the i+1th first connection electrode, the jth fifth connection via hole penetrates through the second interlayer insulating layer of the first j-th layer and is arranged corresponding to the second end of the i+1th first connection electrode, and the jth sixth connection via hole penetrates through the second interlayer insulating layer of the first j-th layer and is arranged corresponding to the second end of the i+1th second connection electrode; the lengths of the jth fourth connection via hole, the jth fifth connection via hole, and the jth sixth connection via hole in the thickness direction of the dielectric substrate are all equal to the length of the jth third connection via hole in the thickness direction of the dielectric substrate, and j is 1 to P-1;

[0016] The first end of the i+1th second conductive structure is connected to the second end of the i-th first conductive structure through the j-th fifth connecting via, the i+1th first connecting electrode, and the j-th fourth connecting via, and the second end of the i+1th second conductive structure is connected to the first end of the i+2th first conductive structure through the j-th sixth connecting via, the i+1th second connecting electrode, and the j-th third connecting via.

[0017] Preferably, the length of each of the first connecting electrodes along the thickness direction of the dielectric substrate is equal to the thickness of the dielectric substrate.

[0018] Preferably, the length of each of the third connecting vias along the thickness direction of the dielectric substrate increases monotonically or decreases monotonically along the first direction.

[0019] Preferably, the method further comprises a first protective layer located on a side of the first interlayer insulating layer away from the dielectric substrate, and a second protective layer located on a side of the second interlayer insulating layer away from the dielectric substrate.

[0020] Preferably, the present disclosure further provides a method for preparing an inductor, comprising: providing a dielectric substrate, the dielectric substrate having P first connection vias and Q second connection vias arranged in a one-to-one correspondence; the dielectric substrate having a first surface and a second surface arranged opposite to each other along a thickness direction thereof; forming P first connection electrodes in the P first connection vias, and forming Q second connection electrodes in the Q second connection vias; forming the M first conductive structures on the first surface side of the dielectric substrate, and forming the N first conductive structures on the second surface side of the dielectric substrate; forming the first protective layer on a side of a layer where the first conductive structures are located away from the dielectric substrate, and forming the second protective layer on a side of a layer where the second conductive structures are located away from the dielectric substrate.

[0021] Preferably, the step of forming the M first conductive structures on the first surface side of the dielectric substrate and forming the N first conductive structures on the second surface side of the dielectric substrate comprises:

[0022] When the length of each of the first connecting electrodes along the thickness direction of the dielectric substrate is equal to the thickness of the dielectric substrate, M first conductive structures are formed on the first surface, and N second conductive structures are formed on the second surface; the first end of the i-th second conductive structure is connected to the second end of the i-th first conductive structure through one of the first connecting electrodes, and the second end of the i-th second conductive structure is connected to the first end of the i+1-th first conductive structure through one of the second connecting electrodes, where i is 1 to M;

[0023] When the length of each first connecting electrode along the thickness direction of the dielectric substrate monotonically increases or decreases along the first direction, the dielectric substrate portion between the i-th first connecting electrode and the i-th second connecting electrode is removed on the first surface so that the i-th first connecting electrode and the i-th second connecting electrode are connected in a smooth plane, and then the i-th first conductive structure is formed by patterning on the smooth plane; and the dielectric substrate portion between the i-th first connecting electrode and the i+1-th second connecting electrode is removed on the second surface so that the i-th first connecting electrode and the i+1-th second connecting electrode are connected in a smooth plane, and then the i-th second conductive structure is formed by patterning on the smooth plane.

[0024] Preferably, the preparation method further comprises forming a first interlayer insulating layer on the first surface of the dielectric substrate, and forming a second interlayer insulating layer on the second surface of the dielectric substrate.

[0025] Preferably, the preparation method further comprises forming Q-1 third connection vias and P-1 fourth connection vias on the first interlayer insulating layer, and forming P-1 fifth connection vias and Q-1 sixth connection vias on the second interlayer insulating layer;

[0026] The jth third connection via penetrates the first interlayer insulating layer of the first j layers and is arranged corresponding to the first end of the i+1th second connection electrode, the jth fourth connection via penetrates the first interlayer insulating layer of the first j layers and is arranged corresponding to the first end of the i+1th first connection electrode, the jth fifth connection via penetrates the second interlayer insulating layer of the first j layers and is arranged corresponding to the second end of the i+1th first connection electrode, and the jth sixth connection via penetrates the second interlayer insulating layer of the first j layers and is arranged corresponding to the second end of the i+1th second connection electrode; the lengths of the jth fourth connection via, the jth fifth connection via, and the jth sixth connection via in the thickness direction of the dielectric substrate are all equal to the length of the jth third connection via in the thickness direction of the dielectric substrate, and j is 1 to P-1.

[0027] Preferably, the preparation method further comprises forming M first conductive structures penetrating the first interlayer insulating layer, and N second conductive structures penetrating the second interlayer insulating layer;

[0028] Each of the first conductive structures is located on the first surface side, and a first interlayer insulating layer is provided between the layers where the adjacent first conductive structures are located, and for the first conductive structure with the first interlayer insulating layer provided between it and the first surface, a first end of the first conductive structure is connected to the second connection electrode through the third connection via hole penetrating the first interlayer insulating layer, and a second end of the first conductive structure is connected to the first connection electrode through the fourth connection via hole penetrating the first interlayer insulating layer;

[0029] Each of the second conductive structures is located on the second surface side, and a second interlayer insulating layer is arranged between the layers where the adjacent second conductive structures are located. For the second conductive structure with the second interlayer insulating layer arranged between the second surface, the first end of the second conductive structure is connected to the first connecting electrode through the fifth connecting via penetrating the second interlayer insulating layer, and the second end is connected to the second connecting electrode through the sixth connecting via penetrating the second interlayer insulating layer.

[0030] Preferably, the preparation method further comprises forming the first protective layer on the first surface of the first interlayer insulating layer away from the dielectric substrate, and forming the second protective layer on the second surface of the second interlayer insulating layer away from the dielectric substrate.

[0031] Preferably, the present disclosure further provides a passive device, comprising the inductor according to any one of claims 1-14. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a schematic diagram of the structure of an existing spiral inductor in a top view;

[0033] Figure 2 A schematic diagram of the structure of an inductor provided by the present disclosure in a top view;

[0034] Figure 3 A schematic diagram of the structure of another inductor provided by the present disclosure in a top view;

[0035] Figure 4 A schematic diagram of the structure of another inductor provided by the present disclosure in a top view;

[0036] Figure 5 A schematic diagram of the structure of another inductor provided by the present disclosure in a top view;

[0037] Figure 6a A structural schematic diagram of step S11 in the process of preparing an inductor provided in the present disclosure;

[0038] Figure 6b A schematic structural diagram of step S12 in the process of preparing an inductor provided in the present disclosure;

[0039] Figure 6c A structural schematic diagram of step S13 in the process of preparing an inductor provided in the present disclosure;

[0040] Figure 6d A schematic diagram of the structure of an inductor provided by the present disclosure;

[0041] Figure 7a A schematic structural diagram of step S21 in the process of preparing an inductor provided in the present disclosure;

[0042] Figure 7b A structural schematic diagram of step S22 in the process of preparing an inductor provided in the present disclosure;

[0043] Figure 7c A structural schematic diagram of step S23 in the process of preparing an inductor provided in the present disclosure;

[0044] Figure 7d A schematic diagram of the structure of another inductor provided by the present disclosure;

[0045] Figure 7e A schematic diagram of the structure of another inductor provided by the present disclosure;

[0046] Figure 8a A structural schematic diagram of step S31 in the process of preparing an inductor provided in the present disclosure;

[0047] Figure 8b A structural schematic diagram of step S32 in the process of preparing an inductor provided in the present disclosure;

[0048] Figure 8c A structural schematic diagram of step S33 in the process of preparing an inductor provided in the present disclosure;

[0049] Figure 8d A schematic diagram of the structure of another inductor provided by the present disclosure;

[0050] Fig. 9 for Figure 8c Side view of an inductor (excluding conductive structures). DETAILED DESCRIPTION

[0051] In order to enable those skilled in the art to better understand the technical solution of the present invention / invention, the present invention / invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0052] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0053] In a first aspect, an embodiment of the present disclosure provides an inductor 200, which includes: a dielectric substrate 100, having a first surface and a second surface arranged opposite to each other along a thickness direction thereof; the dielectric substrate 100 has P first connection vias 1 and Q second connection vias 2 penetrating along a thickness direction thereof; the P first connection vias 1 are arranged side by side, the Q second connection vias 2 are arranged side by side, the first connection vias 1 and the second connection vias 2 are arranged one by one in a second direction with P first connection electrodes 3 and Q second connection electrodes 4, one first connection electrode 3 is arranged in one first connection via 1, and one second connection electrode 4 is arranged in one second connection via 2; M first conductive structures 5 and N second conductive structures 6, M first conductive structures 5 are arranged side by side in sequence along the first direction, N second conductive structures 6 are arranged side by side in sequence along the first direction, the first end of the i-th second conductive structure 6 is connected to the second end of the i-th first conductive structure 5 through a first connecting electrode 3, and the second end of the i-th second conductive structure 6 is connected to the first end of the i+1-th first conductive structure 5 through a second connecting electrode 4, so as to form a coil structure of the inductor 200; M and N are both positive integers greater than or equal to 2, and i is 1 to N; wherein, among the M first conductive structures 5, at least some of the first conductive structures 5 arranged adjacent to each other have lengths in the first direction that monotonically increase or decrease. The diameter of the inductor 200 in the embodiment of the present disclosure in the axial direction of the inductor or the perpendicular axial direction is variable. Compared with the existing spiral inductor, such as Figure 1 As shown, it has a higher overall aperture change rate and thus a wider bandwidth.

[0054] In some examples, the dielectric substrate 100 in the embodiments of the present disclosure is a glass substrate. For the convenience of description and explanation, the embodiments of the present disclosure are explained by taking P=4, Q=4, M=4, and N=4 as an example.

[0055] In some examples, the lengths of at least some of the four adjacent first conductive structures 5 in the second direction monotonically increase or monotonically decrease along the first direction.

[0056] For example, Figure 2 As shown, the lengths of the four first conductive structures 5 in the second direction increase monotonically along the first direction. Since the first conductive structure 5 is connected to the second conductive structure 6 through the vertically arranged first connecting electrodes 3 and second connecting electrodes 4, the lengths of the correspondingly connected second conductive structures 6 in the second direction also increase monotonically along the first direction.

[0057] For example, Figure 3 As shown, the lengths of the four first conductive structures 5 in the second direction decrease monotonically along the first direction, and correspondingly, the lengths of the second conductive structures 6 in the second direction also decrease monotonically along the first direction.

[0058] For example, Figure 4 As shown, the lengths of the four first conductive structures 5 in the second direction first monotonically increase and then monotonically decrease along the first direction, and correspondingly, the lengths of the second conductive structures 6 in the second direction also first monotonically increase and then monotonically decrease along the first direction.

[0059] For example, Figure 5 As shown, the lengths of the four first conductive structures 5 in the second direction first monotonically decrease and then monotonically increase along the first direction, and correspondingly, the lengths of the second conductive structures 6 in the second direction also first monotonically decrease and then monotonically increase along the first direction.

[0060] In some examples, the lengths of the four first connection electrodes 3 in the thickness direction of the dielectric substrate 100 may be equal, or the lengths of the four first connection electrodes 3 in the thickness direction of the dielectric substrate 100 may monotonically increase or decrease along the first direction.

[0061] For example, Figure 6d As described above, the lengths of the four first connecting electrodes 3 in the thickness direction of the dielectric substrate 100 may be equal, and accordingly, the lengths of the four second connecting electrodes 4 in the thickness direction of the dielectric substrate 100 are also equal, and the lengths of the eight connecting electrodes in the thickness direction of the dielectric substrate 100 are all equal to the thickness of the dielectric substrate 100.

[0062] For example, Figure 7d As shown, the line connecting the centers of the four first connection vias 3 in the thickness direction of the dielectric substrate is parallel to the plane where the first surface is located, and the line connecting the centers of the four second connection vias in the thickness direction of the dielectric substrate is on the same horizontal plane as the line connecting the centers of the four first connection vias in the thickness direction of the dielectric substrate. The center of the first connection via 3 in the thickness direction of the dielectric substrate refers to: the midpoint of the axis of the first connection via extending in the thickness direction of the dielectric substrate. The lengths of the four first connection electrodes 3 in the thickness direction of the dielectric substrate 100 increase monotonically along the first direction, and accordingly, the lengths of the four second connection electrodes 4 arranged in one-to-one correspondence with the four first connection electrodes 3 in the thickness direction of the dielectric substrate 100 also increase monotonically along the first direction, wherein the lengths of the first first connection electrode 3, the second first connection electrode 3, and the third connection electrode in the thickness direction of the dielectric substrate 100 are all less than the thickness of the dielectric substrate 100, and the length of the fourth first connection electrode 3 in the thickness direction of the dielectric substrate 100 is equal to the thickness of the dielectric substrate 100.

[0063] For example, Figure 7eAs shown, the line connecting the centers of the four first connection vias 3 in the thickness direction of the dielectric substrate is parallel to the plane where the first surface is located, and the line connecting the centers of the four second connection vias in the thickness direction of the dielectric substrate is on the same horizontal plane as the line connecting the centers of the four first connection vias in the thickness direction of the dielectric substrate. The center of the first connection via 3 in the thickness direction of the dielectric substrate refers to: the midpoint of the axis of the first connection via extending in the thickness direction of the dielectric substrate. The lengths of the four first connection electrodes 3 in the thickness direction of the dielectric substrate 100 decrease monotonically along the first direction, and accordingly, the lengths of the four second connection electrodes 4 arranged in one-to-one correspondence with the four first connection electrodes 3 in the thickness direction of the dielectric substrate 100 also decrease monotonically along the first direction, wherein the lengths of the first second connection electrode 4, the third first connection electrode 3, and the fourth connection electrode in the thickness direction of the dielectric substrate 100 are all less than the thickness of the dielectric substrate 100, and the length of the first first connection electrode 3 in the thickness direction of the dielectric substrate 100 is equal to the thickness of the dielectric substrate 100.

[0064] In some examples, the inductor 200 further includes a first protective layer 9 disposed on a side of the layer where the first conductive structure 5 is located away from the dielectric substrate 100 and a second protective layer 10 disposed on a side of the layer where the second conductive structure 6 is located away from the dielectric substrate 100 .

[0065] In some examples, the inductor 200 further includes three third connection vias 401 and three fourth connection vias 301 disposed on the first surface of the dielectric substrate 100, and three fifth connection vias 302 and three sixth connection vias 402 disposed on the second surface of the dielectric substrate 100. Figure 8d As shown, in this embodiment, the lengths of the four first connection electrodes 3 in the thickness direction of the dielectric substrate 100 are equal and equal to the thickness of the dielectric substrate 100, and accordingly, the lengths of the four second connection plates arranged one-to-one corresponding to the first connection electrodes 3 in the thickness direction of the dielectric substrate 100 are also equal and equal to the thickness of the dielectric substrate 100. Among them, a fourth connection via 301 is arranged at the first end of the first first connection electrode 3 on the first surface of the dielectric substrate 100, and a fourth connection via 301 is arranged at the first end of the second first connection electrode 3, the third first connection electrode 3, and the fourth first connection electrode 3, and the lengths of the three fourth connection vias 301 in the thickness direction of the dielectric substrate 100 are monotonically increased or monotonically decreased along the first direction.

[0066] Correspondingly, a third connection via 401 is provided at the first end of the first second connection electrode 4 on the first surface of the dielectric substrate 100, and a third connection via 401 is provided at the first end of the second second connection electrode 4, the third second connection electrode 4, and the fourth second connection electrode 4, and the lengths of the three third connection vias 401 in the thickness direction of the dielectric substrate 100 monotonically increase or decrease along the first direction.

[0067] Correspondingly, a fifth connection via 302 is provided at the second end of the first first connection electrode 3 on the second surface of the dielectric substrate 100, and a fifth connection via 302 is provided at the second end of the second first connection electrode 3, the third first connection electrode 3, and the fourth first connection electrode 3, and the lengths of the three fifth connection vias 302 in the thickness direction of the dielectric substrate 100 monotonically increase or decrease along the first direction.

[0068] Accordingly, a sixth connection via 402 is provided at the second end of the first second connection electrode 4 on the second surface of the dielectric substrate 100, and a sixth connection via 402 is provided at the second end of the second second connection electrode 4, the third second connection electrode 4, and the fourth second connection electrode 4, and the lengths of the three sixth connection vias 402 in the thickness direction of the dielectric substrate 100 are monotonically increased or monotonically decreased along the first direction. The purpose of such a setting is to realize the gradual increase of the diameter of the inductor 200 in the axial direction, thereby improving the overall diameter change rate of the inductor 200, reducing the inductance value of the inductor 200, and improving the bandwidth of the inductor 200.

[0069] At this time, refer to Figure 8d and Fig. 9 It can be seen that the first end of the first first conductive structure 5 is directly connected to the first second connection electrode 4, and the second end of the first first conductive structure 5 is directly connected to the first first connection electrode 3; the first end of the second first conductive structure 5 is connected to the first end of the second second connection electrode 4 through the first third connection via 401, and the second end of the second first conductive structure 5 is connected to the first end of the second first connection electrode 3 through the first fourth connection via 301; the first end of the third first conductive structure 5 is connected to the first end of the third second connection electrode 4 through the second third connection via 401, and the second end of the third first conductive structure 5 is connected to the first end of the third first connection electrode 3 through the second fourth connection via 301; the first end of the fourth first conductive structure 5 is connected to the first end of the fourth second connection electrode 4 through the third third connection via 401, and the second end of the fourth first conductive structure 5 is connected to the first end of the fourth first connection electrode 3 through the third fourth connection via 301.

[0070] Correspondingly, the first end of the first second conductive structure 6 is directly connected to the second end of the first first connection electrode 3, and the second end of the first second conductive structure 6 is connected to the second end of the second second connection electrode 4 through the first sixth connection via 402; the first end of the second second conductive structure 6 is connected to the second end of the second first connection electrode 3 through the first fifth connection via 302, and the second end of the second second conductive structure 6 is connected to the second end of the third second connection electrode 4 through the second sixth connection via 402; the first end of the third second conductive structure 6 is connected to the second end of the third first connection electrode 3 through the second fifth connection via 302, and the second end of the third second conductive structure 6 is connected to the second end of the fourth second connection via 2 through the third sixth connection via 402; the first end of the fourth second conductive structure 6 is connected to the second end of the fourth first connection electrode 3 through the third fifth connection via 302, and the second end of the fourth second conductive structure 6 can be left floating or continue to be connected to the next second connection electrode 4.

[0071] In some examples, the inductor 200 further includes a first protective layer 9 disposed on a side of the first interlayer insulating layer 7 away from the dielectric substrate 100 and a second protective layer 10 disposed on a side of the second interlayer insulating layer 8 away from the dielectric substrate 100. Figure 8d shown.

[0072] In order to make the preparation method in the embodiment of the present disclosure clear, the preparation method of the inductor in the embodiment of the present disclosure is described in combination with the following three examples.

[0073] First example: See Figure 6a-6d The preparation method of the inductor may include the following steps:

[0074] S11, providing a dielectric substrate 100, the dielectric substrate 100 having four first connecting vias 1 and four second connecting vias 2 arranged in a one-to-one correspondence, such as Figure 6a shown.

[0075] In some examples, step S11 may specifically further include: forming four first connection vias 1 and four second connection vias 2 penetrating the dielectric substrate 100 on the dielectric substrate 100 by laser modification and etching.

[0076] S12 , forming four first connection electrodes 3 in the four first connection via holes 1 , and forming four second connection electrodes 4 in the four second connection via holes 2 .

[0077] In some examples, step S12 may specifically include: forming the first connection electrode 3 and the second connection electrode 4 in the through hole by copper electroplating.

[0078] In some examples, the lengths of the four first connection electrodes 3 in the thickness direction of the dielectric substrate 100 are equal and equal to the thickness of the dielectric substrate 100. Figure 6b As shown, accordingly, the lengths of the four second connecting electrodes 4 in the thickness direction of the dielectric substrate 100 are equal and equal to the thickness of the dielectric substrate 100 .

[0079] S13 . Form four first conductive structures 5 on the first surface of the dielectric substrate 100 , and form four second conductive structures 6 on the second surface of the dielectric substrate 100 .

[0080] In some examples, four first conductive structures 5 are formed on the first surface of the dielectric substrate 100, and four second conductive structures 6 are formed on the second surface of the dielectric substrate 100 by a deposition process. Figure 6c As shown. The first end of the first first conductive structure 5 is connected to the first end of the first second connecting electrode 4, and the second end of the first first conductive structure 5 is connected to the first end of the first first connecting electrode 3; the first end of the second first conductive structure 5 is connected to the first end of the second second connecting electrode 4, and the second end of the second first conductive structure 5 is connected to the first end of the second first connecting electrode 3; the first end of the third first conductive structure 5 is connected to the first end of the third second connecting electrode 4, and the second end of the third first conductive structure 5 is connected to the first end of the third first connecting electrode 3; the first end of the fourth first conductive structure 5 is connected to the first end of the fourth second connecting electrode 4, and the second end of the fourth first conductive structure 5 is connected to the first end of the fourth first connecting electrode 3.

[0081] Correspondingly, the first end of the first second conductive structure 6 is connected to the second end of the first first connecting electrode 3, and the second end of the first second conductive structure 6 is connected to the second end of the second second connecting electrode 4; the first end of the second second conductive structure 6 is connected to the second end of the second first connecting electrode 3, and the second end of the second second conductive structure 6 is connected to the second end of the third second connecting electrode 4; the first end of the third second conductive structure 6 is connected to the second end of the third first connecting electrode 3, and the second end of the third second conductive structure 6 is connected to the second end of the fourth second connecting electrode 4; the first end of the fourth second conductive structure 6 is connected to the second end of the fourth first connecting electrode 3, and the second end of the fourth second conductive structure 6 is suspended.

[0082] S14, forming a first protective layer 9 on the side of the layer where the first conductive structure 5 is located away from the dielectric substrate 100, and forming a second protective layer 10 on the side of the layer where the second conductive structure 6 is located away from the dielectric substrate 100, such as Figure 6d shown.

[0083] In some examples, the first protective layer 9 at least partially contacts the first surface of the dielectric substrate, and the second protective layer 10 at least partially contacts the second surface of the dielectric substrate.

[0084] Second example: See Figures 7a-7d The preparation method of the inductor may include the following steps:

[0085] S21, providing a dielectric substrate 100, the dielectric substrate 100 having four first connecting vias 1 and four second connecting vias 2 arranged in a one-to-one correspondence, such as Figure 7a shown.

[0086] In some examples, step S21 may further specifically include: forming four first connection vias 1 and four second connection vias 2 penetrating the dielectric substrate 100 on the dielectric substrate 100 by laser modification and etching processes.

[0087] S22 , forming four first connection electrodes 3 in the four first connection via holes 1 , and forming four second connection electrodes 4 in the four second connection via holes 2 .

[0088] In some examples, step S22 may specifically include: forming the first connection electrode 3 and the second connection electrode 4 in the through hole by copper electroplating.

[0089] In some examples, the lengths of the four first connection electrodes 3 in the thickness direction of the dielectric substrate 100 increase monotonically along the first direction and are not greater than the thickness of the dielectric substrate 100. Figure 7b As shown, accordingly, the lengths of the four second connecting electrodes 4 in the thickness direction of the dielectric substrate 100 increase monotonically along the first direction and are not greater than the thickness of the dielectric substrate 100 .

[0090] In some examples, the lengths of the four first connecting electrodes 3 in the thickness direction of the dielectric substrate 100 decrease monotonically along the first direction and are not greater than the thickness of the dielectric substrate 100 , and correspondingly, the lengths of the four second connecting electrodes 4 in the thickness direction of the dielectric substrate 100 decrease monotonically along the first direction and are not greater than the thickness of the dielectric substrate 100 .

[0091] S23 , forming four first conductive structures 5 on the first surface side of the dielectric substrate 100 , and forming four second conductive structures 6 on the second surface side of the dielectric substrate 100 .

[0092] In some examples, four first conductive structures 5 are formed on the first surface of the dielectric substrate 100, and four second conductive structures 6 are formed on the second surface of the dielectric substrate 100 by deposition, laser modification, and etching processes. Figure 7c shown.

[0093] In some examples, step S23 may specifically include: placing the first surface of the dielectric substrate upward, removing a portion of the dielectric substrate between the first end of the first first connecting electrode 3 and the first end of the first second connecting electrode 4, so that the first end of the first first connecting electrode 3 and the first end of the first second connecting electrode 4 are connected in a smooth plane, and patterning a first first conductive structure 5 on the plane to connect the first end of the first first connecting electrode 3 and the first end of the first second connecting electrode 4; removing a portion of the dielectric substrate between the first end of the second first connecting electrode 3 and the first end of the second second connecting electrode 4, so that the first end of the second first connecting electrode 3 and the first end of the second second connecting electrode 4 are connected in a smooth plane, and patterning a second first conductive structure 5 on the plane to connect the first end of the second first connecting electrode 3 end and the first end of the second second connecting electrode 4; remove the dielectric substrate portion between the first end of the third first connecting electrode 3 and the first end of the third second connecting electrode 4, so that the first end of the third first connecting electrode 3 and the first end of the third second connecting electrode 4 are connected in a smooth plane, and a third first conductive structure 5 is formed on the plane to connect the first end of the third first connecting electrode 3 and the first end of the third second connecting electrode 4; remove the dielectric substrate portion between the first end of the fourth first connecting electrode 3 and the first end of the fourth second connecting electrode 4, so that the first end of the fourth first connecting electrode 3 and the first end of the fourth second connecting electrode 4 are connected in a smooth plane, and a fourth first conductive structure 5 is formed on the plane to connect the first end of the fourth first connecting electrode 3 and the first end of the fourth second connecting electrode 4.

[0094] Correspondingly, the second surface of the dielectric substrate is placed upward, and a portion between a plane perpendicular to the first direction including the rightmost tangent of the first first connection electrode 3 and a plane perpendicular to the first direction including the leftmost tangent of the second first connection electrode 3 and a portion on the side of the plane where the second end of the first first connection electrode 3 is located away from the dielectric substrate is removed to form a new connection surface, and a first second conductive structure 6 is patterned on the new connection surface to connect the second end of the first first connection electrode 3 and the second end of the second second connection electrode 4; a portion between a plane perpendicular to the first direction including the rightmost tangent of the second first connection electrode 3 and a plane perpendicular to the first direction including the leftmost tangent of the third first connection electrode 3 and a portion on the side of the plane where the second end of the second first connection electrode 3 is located away from the dielectric substrate is removed to form a new connection surface, and a first second conductive structure 6 is patterned on the new connection surface to connect the second end of the first first connection electrode 3 and the second end of the second second connection electrode 4 is formed. A second second conductive structure 6 is patterned on the connection surface to connect the second end of the second first connection electrode 3 and the second end of the third second connection electrode 4; a new connection surface is formed by removing a portion between a plane perpendicular to the first direction including the rightmost tangent of the third first connection electrode 3 and a plane perpendicular to the first direction including the leftmost tangent of the fourth first connection electrode 3 and on the side of the plane where the second end of the third first connection electrode 3 is located away from the dielectric substrate, and a third second conductive structure 6 is patterned on the new connection surface to connect the second end of the third first connection electrode 3 and the second end of the fourth second connection electrode 4; a fourth second conductive structure 6 is patterned on the second surface of the dielectric substrate, the first end of the fourth second conductive structure 6 is connected to the second end of the fourth first connection electrode 3, and the second end of the fourth second conductive structure 6 is suspended.

[0095] S24, forming a first protective layer 9 on the side of the layer where the first conductive structure 5 is located away from the dielectric substrate 100, and forming a second protective layer 10 on the side of the layer where the second conductive structure 6 is located away from the dielectric substrate 100, such as Figure 7d shown.

[0096] In some examples, the first protective layer 9 at least partially contacts the first surface of the dielectric substrate, and the second protective layer 10 at least partially contacts the second surface of the dielectric substrate.

[0097] The third example: See Figures 8a-8d The preparation method of the inductor may include the following steps:

[0098] S31, providing a dielectric substrate 100, the dielectric substrate 100 having four first connecting vias 1 and four second connecting vias 2 arranged in a one-to-one correspondence, such as Figure 8a shown.

[0099] In some examples, step S21 may further specifically include: forming four first connection vias 1 and four second connection vias 2 penetrating the dielectric substrate 100 on the dielectric substrate 100 by laser modification and etching processes.

[0100] S32 , forming four first connection electrodes 3 in the four first connection via holes 1 , and forming four second connection electrodes 4 in the four second connection via holes 2 .

[0101] In some examples, step S32 may specifically include: forming the first connection electrode 3 and the second connection electrode 4 in the through hole by copper electroplating.

[0102] In some examples, the lengths of the four first connection electrodes 3 in the thickness direction of the dielectric substrate 100 are equal and equal to the thickness of the dielectric substrate 100. Figure 8b As shown, accordingly, the lengths of the four second connecting electrodes 4 in the thickness direction of the dielectric substrate 100 are equal and equal to the thickness of the dielectric substrate 100 .

[0103] S33, forming three first interlayer insulating layers 7 on the first surface of the dielectric substrate 100, and forming three third connecting vias 401, three fourth connecting vias 301 and four first conductive structures 5, forming three second interlayer insulating layers 8 on the second surface of the dielectric substrate 100, and forming three fifth connecting vias 302, three sixth connecting vias 402 and four second conductive structures 6, as shown in FIG. Figure 8c shown.

[0104] In some examples, step S33 may specifically include: placing the first surface of the dielectric substrate 100 upward, forming a first first conductive structure 5 on the first surface to connect the first end of the first first connecting electrode 3 and the first end of the first second connecting electrode 4; forming a first first interlayer insulating layer 701 on the first surface of the dielectric substrate 100 by a deposition process, forming a first third connecting via 401 and a first fourth connecting via 301 penetrating the first first interlayer insulating layer 701 by a patterning process, and forming a first third connecting via 401 and a first fourth connecting via 301 on the side of the first interlayer insulating layer 701 facing away from the dielectric substrate 100 by a patterning process. The second first conductive structure 5 is formed by a deposition process, the second end of the second first conductive structure 5 is connected to the first end of the second first connection electrode 3 through the first fourth connection via 301, and the first end of the second first conductive structure 5 is connected to the first end of the second second connection electrode 4 through the first third connection via 401; a second first interlayer insulating layer 702 is formed on the side of the first first interlayer insulating layer 701 away from the dielectric substrate 100 by a deposition process, and a second third connection via 401 and a first third connection via 401 that penetrate through the first first interlayer insulating layer 701 and the second first interlayer insulating layer 702 are formed by a patterning process. Two fourth connecting vias 301 are formed on the side of the second first interlayer insulating layer 702 away from the dielectric substrate 100 by a patterning process, the second end of the third first connecting electrode 3 is connected to the first end of the second first connecting electrode 3 through the second fourth connecting via 301, and the first end of the third first connecting electrode 3 is connected to the first end of the third second connecting electrode 4 through the second third connecting via 401; a third first interlayer insulating layer 703 is formed on the side of the second first interlayer insulating layer 702 away from the dielectric substrate 100 by a deposition process, and a through hole 402 is formed by a patterning process. A third third connection via 401 and a third fourth connection via 301 are formed through the first first interlayer insulating layer 701, the second first interlayer insulating layer 702 and the third first interlayer insulating layer 703, and a fourth first connection electrode 3 is formed on a side of the third first interlayer insulating layer 703 away from the dielectric substrate 100 through a patterning process, a second end of the fourth first connection electrode 3 is connected to a first end of the fourth first connection electrode 3 through the third fourth connection via 301, and a first end of the fourth first connection electrode 3 is connected to a first end of the fourth second connection electrode 4 through the third third connection via 401.

[0105] Accordingly, the second surface of the dielectric substrate 100 is placed upward, a first second interlayer insulating layer 801 is formed on the second surface, a first fifth connecting via 302 and a first sixth connecting via 402 are formed by a patterning process through the first second interlayer insulating layer 801, a portion between a plane perpendicular to the first direction including the rightmost tangent of the first first connecting electrode 3 and a plane perpendicular to the first direction including the leftmost tangent of the first fifth connecting via 302 and on a side of the plane where the second end of the first first connecting electrode 3 is located away from the dielectric substrate is removed to form a new connecting surface, and a first second conductive structure 6 is patterned on the new connecting surface to connect the first a second end of the first connecting electrode 3 and a second end of the second connecting electrode 4; a second second interlayer insulating layer 802 is formed on the side of the first second interlayer insulating layer 801 away from the dielectric substrate 100, a second fifth connecting via 302 and a second sixth connecting via 402 are formed by a patterning process through the first second interlayer insulating layer 801 and the second second interlayer insulating layer 802, and a plane perpendicular to the first direction including the rightmost tangent of the first fifth connecting via 302 and a plane perpendicular to the first direction including the leftmost tangent of the second sixth connecting via 402 are removed, and a plane where the second end of the first first connecting electrode 3 is located away from the dielectric substrate 100 is removed. A new connection surface is formed on one side of the board, and a second second conductive structure 6 is patterned on the new connection surface to connect the second end of the second first connection electrode 3 and the second end of the third second connection electrode 4; a third second interlayer insulating layer 803 is formed on the side of the second second interlayer insulating layer 802 away from the dielectric substrate 100, and a third fifth connection via 302 and a third sixth connection via 402 are formed through the first second interlayer insulating layer 801, the second second interlayer insulating layer 802 and the third second interlayer insulating layer 803 by a patterning process, and the plane perpendicular to the first direction including the rightmost tangent of the second fifth connection via 302 and the vertical direction are removed. A new connection surface is formed between the planes including the leftmost tangent of the third sixth connection via 402 in the first direction and on the part of the plane where the second end of the first first connection electrode 3 is located away from the dielectric substrate, and a third second conductive structure 6 is patterned on the new connection surface to connect the second end of the third first connection electrode 3 and the second end of the fourth second connection electrode 4; a fourth second conductive structure 6 is formed on the side of the third second interlayer insulating layer 803 away from the dielectric substrate 100, and the first end of the fourth second conductive structure 6 is connected to the second end of the fourth first connection electrode 3 through the third fifth connection via 302, and the second end of the fourth second conductive structure 6 is suspended.

[0106] In some examples, the first conductive structure 5 and the second conductive structure 6 may be prepared by additive electroplating or subtractive electroplating, and the thickness thereof may be 1-10 μm.

[0107] In some examples, the coating method of the first interlayer insulating layer 7 and the second interlayer insulating layer 8 may include spin coating, spray coating, printing, etc., and the material of the first interlayer insulating layer 7 and the second interlayer insulating layer 8 may include polyimide (PI).

[0108] S34, forming a first protective layer 9 on the side of the third first interlayer insulating layer 703 away from the dielectric substrate 100, and forming a second protective layer 10 on the side of the third second interlayer insulating layer 803 away from the dielectric substrate 100, as shown in FIG. Figure 8d shown.

[0109] In some examples, the material of the first protection layer 9 and the second protection layer 10 may include polyimide.

[0110] At this point, the preparation of the inductor is completed. Since the aperture in the first direction of the inductor or in the thickness direction of the dielectric substrate is changed, the overall aperture change rate of the inductor is improved, thereby improving the bandwidth of the inductor, and can be better applied to large-bandwidth scenarios such as bias junction circuits, amplifier circuits, and optical wireless communication systems.

[0111] In a second aspect, an embodiment of the present disclosure provides a passive device, which includes the inductor in any of the above embodiments. The passive device in the present disclosure may include a passive filter, a passive multiplexer, a passive amplifier, a passive radio frequency circuit, etc.

[0112] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An inductor, comprising: A dielectric substrate having P first connecting vias and Q second connecting vias penetrating along a thickness direction thereof; The P first connection vias are arranged side by side, the Q second connection vias are arranged side by side, and one of the first connection vias and one of the second connection vias are arranged correspondingly in the second direction; P and Q are both positive integers greater than or equal to 2; P first connection electrodes and Q second connection electrodes, one first connection electrode is arranged in one first connection via hole, and one second connection electrode is arranged in one second connection via hole; M first conductive structures and N second conductive structures, the M first conductive structures are sequentially arranged side by side along a first direction, the N second conductive structures are sequentially arranged side by side along the first direction, a first end of the i-th second conductive structure is connected to a second end of the i-th first conductive structure through one of the first connecting electrodes, and a second end of the i-th second conductive structure is connected to a first end of an i+1-th first conductive structure through one of the second connecting electrodes, so as to form a coil structure of an inductor; M and N are both positive integers greater than or equal to 2, and i is 1 to N; Among the M first conductive structures, lengths of at least some of the adjacently arranged first conductive structures in the second direction monotonically increase or monotonically decrease.

2. The inductor according to claim 1, wherein: The length of each of the first conductive structures in the second direction first increases monotonically and then decreases monotonically along the first direction; or, The length of each of the first conductive structures in the second direction first decreases monotonically and then increases monotonically along the first direction.

3. The inductor according to claim 1, wherein: The dielectric substrate has a first surface and a second surface arranged opposite to each other along its thickness direction, a line connecting the centers of each of the first connecting vias in the thickness direction of the dielectric substrate is parallel to a plane where the first surface is located, and a line connecting the centers of each of the second connecting vias in the thickness direction of the dielectric substrate is on the same horizontal plane as a line connecting the centers of each of the first connecting vias in the thickness direction of the dielectric substrate.

4. The inductor according to claim 3, wherein: The length of each of the first connecting electrodes in the thickness direction of the dielectric substrate is equal to the thickness of the dielectric substrate; or, The length of each of the first connecting electrodes in the thickness direction of the dielectric substrate increases or decreases monotonically along the first direction, and the length of each of the first connecting electrodes in the thickness direction of the dielectric substrate is not greater than the thickness of the dielectric substrate.

5. The inductor according to claim 4, wherein: When the length of each of the first connecting electrodes in the thickness direction of the dielectric substrate monotonically increases or decreases along the first direction, the length of each of the first connecting vias in the thickness direction of the dielectric substrate monotonically increases or decreases along the first direction.

6. The inductor according to claim 1, wherein: It also includes a first protective layer located on a side of the layer where the first conductive structure is located away from the dielectric substrate, and a second protective layer located on a side of the layer where the second conductive structure is located away from the dielectric substrate.

7. The inductor according to claim 1, wherein: Also includes Q-1 third connection vias, P-1 fourth connection vias, P-1 fifth connection vias, Q-1 sixth connection vias, P-1 first interlayer insulating layer, and P-1 second interlayer insulating layer; Each of the first conductive structures is located on the first surface side, and a first interlayer insulating layer is provided between the layers where the adjacent first conductive structures are located, and for the first conductive structure with the first interlayer insulating layer provided between it and the first surface, a first end of the first conductive structure is connected to the second connection electrode through the third connection via hole penetrating the first interlayer insulating layer, and a second end of the first conductive structure is connected to the first connection electrode through the fourth connection via hole penetrating the first interlayer insulating layer; The first interlayer insulating layers are arranged in sequence along a direction away from the dielectric substrate; Each of the second conductive structures is located on the second surface side, and a second interlayer insulating layer is provided between the layers where the adjacent second conductive structures are located, and for the second conductive structure with the second interlayer insulating layer provided between the second surface, a first end of the second conductive structure is connected to the first connection electrode through the fifth connection via hole penetrating the second interlayer insulating layer, and a second end of the second conductive structure is connected to the second connection electrode through the sixth connection via hole penetrating the second interlayer insulating layer; The second interlayer insulating layers are arranged in sequence along a direction away from the dielectric substrate; The jth third connection via hole penetrates through the first j-th interlayer insulating layer and is arranged corresponding to the first end of the i+1th second connection electrode, the jth fourth connection via hole penetrates through the first j-th interlayer insulating layer and is arranged corresponding to the first end of the i+1th first connection electrode, the jth fifth connection via hole penetrates through the second interlayer insulating layer of the first j-th layer and is arranged corresponding to the second end of the i+1th first connection electrode, and the jth sixth connection via hole penetrates through the second interlayer insulating layer of the first j-th layer and is arranged corresponding to the second end of the i+1th second connection electrode; the lengths of the jth fourth connection via hole, the jth fifth connection via hole, and the jth sixth connection via hole in the thickness direction of the dielectric substrate are all equal to the length of the jth third connection via hole in the thickness direction of the dielectric substrate, and j is 1 to P-1; The first end of the i+1th second conductive structure is connected to the second end of the i-th first conductive structure through the j-th fifth connecting via, the i+1th first connecting electrode, and the j-th fourth connecting via, and the second end of the i+1th second conductive structure is connected to the first end of the i+2th first conductive structure through the j-th sixth connecting via, the i+1th second connecting electrode, and the j-th third connecting via.

8. The inductor according to claim 7, wherein: The length of each of the first connecting electrodes along the thickness direction of the dielectric substrate is equal to the thickness of the dielectric substrate.

9. The inductor according to claim 7, wherein: The length of each of the third connecting vias along the thickness direction of the dielectric substrate monotonically increases or decreases along the first direction.

10. The inductor according to claim 7, wherein: The invention also includes a first protective layer located on a side of the first interlayer insulating layer away from the dielectric substrate, and a second protective layer located on a side of the second interlayer insulating layer away from the dielectric substrate.

11. A method for preparing an inductor, comprising: Providing a dielectric substrate, the dielectric substrate having P first connecting vias and Q second connecting vias arranged in a one-to-one correspondence; The dielectric substrate has a first surface and a second surface which are arranged opposite to each other along the thickness direction thereof; forming P first connection electrodes in P first connection vias, and forming Q second connection electrodes in Q second connection vias; The M first conductive structures are formed on the first surface side of the dielectric substrate, and the N first conductive structures are formed on the second surface side of the dielectric substrate; The first protective layer is formed on a side of the layer where the first conductive structure is located away from the dielectric substrate, and the second protective layer is formed on a side of the layer where the second conductive structure is located away from the dielectric substrate.

12. The preparation method according to claim 11, wherein The step of forming the M first conductive structures on the first surface side of the dielectric substrate and forming the N first conductive structures on the second surface side of the dielectric substrate comprises: When the length of each of the first connecting electrodes along the thickness direction of the dielectric substrate is equal to the thickness of the dielectric substrate, M first conductive structures are formed on the first surface, and N second conductive structures are formed on the second surface; the first end of the i-th second conductive structure is connected to the second end of the i-th first conductive structure through one of the first connecting electrodes, and the second end of the i-th second conductive structure is connected to the first end of the i+1-th first conductive structure through one of the second connecting electrodes, where i is 1 to M; When the length of each first connecting electrode along the thickness direction of the dielectric substrate monotonically increases or decreases along the first direction, the dielectric substrate portion between the i-th first connecting electrode and the i-th second connecting electrode is removed on the first surface so that the i-th first connecting electrode and the i-th second connecting electrode are connected in a smooth plane, and then the i-th first conductive structure is formed by patterning on the smooth plane; and the dielectric substrate portion between the i-th first connecting electrode and the i+1-th second connecting electrode is removed on the second surface so that the i-th first connecting electrode and the i+1-th second connecting electrode are connected in a smooth plane, and then the i-th second conductive structure is formed by patterning on the smooth plane.

13. The preparation method according to claim 11, wherein: The method also includes forming a first interlayer insulating layer on the first surface of the dielectric substrate, and forming a second interlayer insulating layer on the second surface of the dielectric substrate.

14. The preparation method according to claim 13, wherein: The method further includes forming P-1 third connection vias and Q-1 fourth connection vias on the first interlayer insulating layer, and forming Q-1 fifth connection vias and P-1 sixth connection vias on the second interlayer insulating layer; The jth third connection via penetrates the first interlayer insulating layer of the first j layers and is arranged corresponding to the first end of the i+1th second connection electrode, the jth fourth connection via penetrates the first interlayer insulating layer of the first j layers and is arranged corresponding to the first end of the i+1th first connection electrode, the jth fifth connection via penetrates the second interlayer insulating layer of the first j layers and is arranged corresponding to the second end of the i+1th first connection electrode, and the jth sixth connection via penetrates the second interlayer insulating layer of the first j layers and is arranged corresponding to the second end of the i+1th second connection electrode; the lengths of the jth fourth connection via, the jth fifth connection via, and the jth sixth connection via in the thickness direction of the dielectric substrate are all equal to the length of the jth third connection via in the thickness direction of the dielectric substrate, and j is 1 to P-1.

15. The preparation method according to claim 14, wherein: Also comprising forming M first conductive structures penetrating the first interlayer insulating layer, and N second conductive structures penetrating the second interlayer insulating layer; Each of the first conductive structures is located on the first surface side, and a first interlayer insulating layer is provided between the layers where the adjacent first conductive structures are located, and for the first conductive structure with the first interlayer insulating layer provided between it and the first surface, a first end of the first conductive structure is connected to the second connection electrode through the third connection via hole penetrating the first interlayer insulating layer, and a second end of the first conductive structure is connected to the first connection electrode through the fourth connection via hole penetrating the first interlayer insulating layer; Each of the second conductive structures is located on the second surface side, and a second interlayer insulating layer is arranged between the layers where the adjacent second conductive structures are located. For the second conductive structure with the second interlayer insulating layer arranged between the second surface, the first end of the second conductive structure is connected to the first connecting electrode through the fifth connecting via penetrating the second interlayer insulating layer, and the second end is connected to the second connecting electrode through the sixth connecting via penetrating the second interlayer insulating layer.

16. The preparation method according to claim 15, wherein: The method further includes forming the first protective layer on the first surface at a side of the first interlayer insulating layer away from the dielectric substrate, and forming the second protective layer on the second surface at a side of the second interlayer insulating layer away from the dielectric substrate.

17. A passive device comprising the inductor according to any one of claims 1 to 16.

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