1-bit dual-polarized transmitting array antenna unit applied to 5g millimeter wave communication relay

Abstract

The application relates to a 1-bit dual-polarized transmission array antenna unit applied to 5G millimeter wave communication relaying, which is suitable for the mobile communication field and comprises a pair of transceiving antenna units placed in an upside-down structure and in a flip symmetry, wherein a single receiving / transmitting antenna unit comprises four groups of double-layer stacked patch units surrounded by cavities, a power division network formed by a strip line, a 1-bit digital phase shifter formed by a 3-dB directional coupler, two PIN diode switches connected in series at the end of the phase shifter, and a capacitive coupling structure; the patch, the power division network, the PIN diode and the capacitive coupling structure are connected through vertical metallized vias; the phase shifter can provide two phase changes of 0 DEG and 180 DEG by simultaneously changing the states of the two PIN diode switches of the receiving / transmitting antenna; the application simultaneously controls four groups of patch antenna units by using two PIN diodes, realizes high-precision beam scanning characteristics in a 1-bit dual-polarized two-dimensional plane, reduces the number of active devices, and reduces the loss and power consumption of the antenna unit.

Description

Technical Field

[0001] This invention belongs to the field of antenna design in wireless communication technology, and specifically relates to a 1-bit dual-polarized transmission array antenna unit for use in 5G millimeter-wave communication relay. Background Technology

[0002] Transmissive array antennas are high-gain, space-fed antennas that combine array antenna theory with geometric optics principles. These antennas can achieve high-gain radiation through a relatively simple planar microstrip structure and have attracted widespread attention in mobile communications, Earth remote sensing, space power combining, and terahertz imaging. Traditional transmissive arrays are often limited in their application due to complex element structures, narrow bandwidth, low aperture efficiency, and high antenna profile. In mobile communications, power consumption is a crucial factor for base station antennas. With the development of reconfigurable technology, active devices such as PIN diodes are increasingly used in reconfigurable base station antenna designs. However, this also leads to increased overall antenna power consumption and insertion loss. Traditional transmissive arrays already face significant transmission losses, further increasing energy loss. Therefore, a low-power, low-loss, wideband, high-gain beam-scanning transmissive array antenna shows promising application prospects. Summary of the Invention

[0003] To overcome the shortcomings of the prior art, the present invention aims to provide a 1-bit dual-polarized transmission array antenna unit for 5G millimeter-wave communication relay. It uses two PIN diode switches to realize the dual-polarized beam scanning function in a two-dimensional plane. While ensuring the antenna's operating bandwidth, aperture efficiency, and pointing accuracy, it reduces the overall insertion loss of the antenna and reduces the antenna's power consumption.

[0004] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0005] A 1-bit dual-polarized transmission array antenna element for 5G millimeter-wave communication relay. The antenna element contains transceiver antennas with identical structures. The transceiver antennas are connected by a capacitive coupling structure and are symmetrical about the x-axis at the geometric center of the antenna element.

[0006] A single receiving or transmitting antenna includes several upper-layer patches and several lower-layer patches, with each upper-layer patch and each lower-layer patch arranged along the y-axis. The upper-layer patches and lower-layer patches are stacked together in a one-to-one correspondence along the z-axis and are located in a cavity surrounded by multiple first metallized vias.

[0007] Below the lower patch panel are cascaded power divider networks and 1-bit phase shifters. The lower patch panel is connected to the power divider network through a second metallized via. The two branches of the 1-bit phase shifter are connected in series with a PIN diode switch through a feed probe. The capacitive coupling structure is cascaded to the end of the 1-bit phase shifter through a sixth metallized via.

[0008] In one embodiment, the antenna unit is symmetrical about the x-axis at the antenna geometric center, and the antenna unit is divided into transceiver antennas with identical structures at half the height of the antenna unit.

[0009] In one embodiment, the upper patch is located at the cutout position of the first copper layer, and the lower patch is located at the cutout position of the second copper layer. The upper and lower patches are stacked together, and a cavity is formed around the cutout position by a first metallized via. The two PIN diode switches are located at the cutout position in the middle of the first copper layer and are used to control the state of the 1-bit phase shifter.

[0010] In one embodiment, the upper and lower patches are rectangular or a modified rectangle, and the two patches are stacked in the center of a cavity formed by a first metallized via. There is a dielectric gap between the two patches and between the patches and the cavity. The modified rectangle includes: notching one or more sides of the rectangle to form a groove, or connecting an extension portion.

[0011] In one embodiment, a third copper layer, a fourth copper layer, a fifth copper layer, and a sixth copper layer are sequentially disposed below the second copper layer; the third copper layer serves as the ground plane of the patch, is connected to the first copper layer through a third metallized via, forms a cavity around the patch, and provides grounding for the PIN diode switch.

[0012] The fourth, fifth, and sixth copper clad layers constitute the transmission line structure of the stripline. The fourth and sixth copper clad layers serve as the ground plane of the stripline and are connected together through several fifth metallized vias. They are also connected to the third copper clad layer through several fourth metallized vias to ensure the continuity of the ground plane structure. The fifth copper clad layer consists of the power divider network and a 1-bit phase shifter. The several fifth metallized vias are located on both sides of the power divider network to confine energy around the stripline and suppress the generation of parallel planar waveguide modes. The starting end of the power divider network is connected to the lower patch through a second metallized via, and the end of the 1-bit phase shifter is connected to the capacitive coupling structure through a sixth metallized via.

[0013] In one embodiment, the capacitive coupling structure is arranged at a cutout position on the sixth copper cladding layer.

[0014] In one embodiment, the 1-bit phase shifter is composed of a 3-dB directional coupler with one output port short-circuited or open-circuited. The two output ports of the 1-bit phase shifter are respectively connected to two microstrip lines of the first copper layer through a fourth metallized via. A PIN diode switch is connected in series on each microstrip line. Each PIN diode switch has two states: closed and open, which control the connection between the output port of the 1-bit phase shifter and the ground. When the PIN diode switch is closed, the output port of the 1-bit phase shifter is short-circuited to ground. When the PIN diode switch is open, the output port of the 1-bit phase shifter is open-circuited.

[0015] In one embodiment, the two input ports of the 1-bit phase shifter are cascaded with a power divider network and a capacitive coupling structure, respectively.

[0016] In one embodiment, the orthogonally polarized capacitive coupling structures of the transceiver antennas are placed opposite each other; the upper patch and the lower patch resonate at two similar operating frequencies, and the two frequency points are combined to obtain a wider operating bandwidth, thereby broadening its operating bandwidth.

[0017] In one embodiment, the patch of the receiving antenna receives electromagnetic wave energy in free space. The energy enters the power divider network through the second metallized via. The power divider network combines the energy of several groups of patches and feeds it into a 1-bit phase shifter. After adding 1-bit phase through the 1-bit phase shifter, the electromagnetic wave energy is fed into the capacitive coupling structure and coupled to the power divider network of the transmitting antenna. The power divider network of the transmitting antenna divides the energy into several equal parts and feeds them into several groups of patches of another polarized transmitting antenna, which are finally radiated into free space.

[0018] Compared with the prior art, the beneficial effects of the present invention are:

[0019] 1) 1-bit quantization enables beam scanning of ±45° in a two-dimensional plane.

[0020] 2) Dual-polarization, and the beam scanning directions of the two polarizations can be adjusted independently.

[0021] 3) The use of fewer PIN diodes reduces the insertion loss of the unit, simplifies the design of the control circuit, and lowers the overall power consumption of the antenna array.

[0022] 4) The unit structure is simple, and the phase shifter is designed with stripline, which reduces the production cost of the antenna. Attached Figure Description

[0023] Figure 1 This is a three-dimensional structural exploded view of a preferred embodiment of the present invention.

[0024] Figure 2 This is a schematic diagram of the layered structure and vias of a preferred embodiment of the present invention.

[0025] Figure 3 This is a top view of the first copper-clad layer of the antenna element in a specific embodiment.

[0026] Figure 4 This is a top view of the second copper-clad layer of the antenna element in a specific embodiment.

[0027] Figure 5 This is a top view of the third and fourth copper-clad layers of the antenna element in a specific embodiment.

[0028] Figure 6 This is a top view of the fifth copper-clad layer of the antenna element in a specific embodiment.

[0029] Figure 7 This is a top view of the sixth copper layer of the antenna element in a specific embodiment.

[0030] Figure 8 The figure shows the insertion loss curves of the antenna element in two states in a specific implementation.

[0031] Figure 9 The image shows the phase curves of the antenna element in two states in a specific implementation.

[0032] Figure 10 The curves are |S11| curves for the two states of the antenna element in a specific implementation.

[0033] Figure 11 This is the cross-polarization curve of the antenna element in two states in a specific implementation. Detailed Implementation

[0034] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings and examples.

[0035] As a preferred embodiment of the present invention, the three-dimensional metal structure exploded view and layered schematic diagram of the 1-bit dual-polarized transmission array antenna unit applied to 5G millimeter-wave communication relay are as follows: Figure 1 and Figure 2 As shown.

[0036] Combination Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 and Figure 7The antenna unit of this invention comprises identical transceiver antennas, a power divider network 5, and a 1-bit phase shifter 6, etc. The transceiver antennas are connected by a capacitive coupling structure 11 and are symmetrically rotated 180° about the x-axis at the geometric center of the antenna unit. More preferably, the entire antenna unit is symmetrically rotated 180° about the x-axis at its geometric center, and the antenna unit is divided into identical transceiver antennas at half its height, with the upper and lower structures of the transceiver antennas flipped symmetrically. In the following description, for ease of expression, the half-height point of the antenna unit is defined as "lower," and the transceiver antennas on both sides are defined as "upper," that is, the point closer to the half-height point of the antenna unit is lower, and the point farther from the half-height point is upper.

[0037] The present invention relates to a transceiver antenna, which includes both a receiving antenna and a transmitting antenna. The receiving antenna and the transmitting antenna have identical structures. A single receiving or transmitting antenna includes a double-layer stacked patch unit surrounded by a cavity. The double-layer stacked patch unit consists of several upper patch 1s and several lower patch 2s. This embodiment shows a total of four sets of double-layer stacked patch units. In the antenna unit, each upper patch 1 and each lower patch 2 is arranged along the y-axis. The upper patch 1s and lower patch 2 are stacked together in a one-to-one correspondence along the z-axis and are located in the cavity surrounded by multiple first metallized vias 3.

[0038] The power divider network 5 and the 1-bit phase shifter 6 are cascaded and located below the lower patch 2. The power divider network 5 is connected to the lower patch 2 through the second metallized via 4, which is also connected to the four sets of double-layer stacked patch units. After being combined into a four-in-one circuit, it is cascaded with the 1-bit phase shifter 6. The two branches of the 1-bit phase shifter 6 are connected in series with a PIN diode switch 7 through a feed probe. The capacitive coupling structure 11 is cascaded to the end of the 1-bit phase shifter 6 through the sixth metallized via 12.

[0039] With the above structure, by simultaneously changing the states of the two PIN diode switches 7 of the receiving antenna and the transmitting antenna, the 1-bit phase shifter 6 can provide two phase changes: 0° and 180°. Therefore, this embodiment utilizes two PIN diode switches 7 to simultaneously control four sets of double-layer stacked patch units, achieving high-precision beam scanning characteristics in a 1-bit dual-polarization 2D plane, reducing the number of active devices, and lowering antenna unit losses and power consumption.

[0040] The complete working process and principle of this invention are as follows:

[0041] The upper patch 1 and lower patch 2 of the receiving antenna receive electromagnetic wave energy in free space. The energy enters the power divider network 5 through the second metallized via 4. The power divider network 5 combines the energy from each group of patches and feeds it into a 1-bit phase shifter 6. After adding 1-bit phase (0° or 180°) through the 1-bit phase shifter 6, the electromagnetic wave energy is fed into the capacitive coupling structure 11 and coupled to the power divider network 5 of the transmitting antenna. The power divider network 5 of the transmitting antenna divides the energy into several equal parts and feeds them into several groups of patches of another polarized transmitting antenna, ultimately radiating into free space. This invention uses 1-bit quantization, thus enabling beam scanning of ±45° in a two-dimensional plane.

[0042] In this invention, a polarization conversion occurs between the transmitting and receiving antennas. The energy of the two polarizations undergoes a similar propagation process, the difference being that the 1-bit phase shifters 6 through which the energy passes are located on the receiving and transmitting antennas, respectively. Thus, this invention achieves dual-line polarization, and the beam scanning directions of the two polarizations can be adjusted independently.

[0043] Furthermore, this invention designs a first copper layer 13 and a second copper layer 14 for the double-layer stacked surface mount unit. The upper surface mount 1 is located in the cutout position of the first copper layer 13, and the lower surface mount 2 is located in the cutout position of the second copper layer 14. The upper surface mount 1 and the lower surface mount 2 are stacked together to form a double-layer stacked surface mount unit. The perimeter of the double-layer stacked surface mount unit is enclosed by a first metallized via 3 along the edge of the cutout position. A cutout position is also provided in the middle of the first copper layer 13, and two PIN diode switches 7 are placed in this middle cutout position. The state of the 1-bit phase shifter 6 is controlled by the two PIN diode switches 7; that is, the opening and closing of the PIN diode switches 7 determines whether the end of the 1-bit phase shifter 6 is open-circuited or short-circuited to ground. Therefore, this invention reduces the use of PIN diode switches and lowers the insertion loss of the unit.

[0044] In embodiments of the present invention, the upper patch 1 and the lower patch 2 can be rectangular or slightly modified. An upper patch 1 and a lower patch 2 are stacked in the center of the cavity enclosed by the first metallized via 3. A certain dielectric gap exists between the two patches and between the patches and the cavity. The slight modification referred to in this embodiment involves deforming the rectangular patch, including: creating notches to form grooves on one or more sides of the rectangle, or connecting it with an extension portion. The rectangle or its deformation not only meets the processing requirements but also allows for better matching with other structures.

[0045] Furthermore, the present invention also designs a third copper-clad layer 15, a fourth copper-clad layer 16, a fifth copper-clad layer 17, and a sixth copper-clad layer 18 arranged sequentially below the second copper-clad layer 14. For this purpose, a first dielectric layer 19, a second dielectric layer 20, a third dielectric layer 21, and a fourth dielectric layer 22 are also arranged, arranged sequentially from top to bottom. The first copper-clad layer 13 is located on the upper surface of the first dielectric layer 19; the second copper-clad layer 14 is located on the upper surface of the second dielectric layer 20 and is assembled to the lower surface of the first dielectric layer 19 via a first adhesive layer 23; the third copper-clad layer 15 is located on the lower surface of the second dielectric layer 20; the fourth copper-clad layer 16 is located on the upper surface of the third dielectric layer 21 and is assembled to the lower surface of the third copper-clad layer 15 via a second adhesive layer 24; the fifth copper-clad layer 17 is located on the upper surface of the fourth dielectric layer 22 and is assembled to the lower surface of the third dielectric layer 21 via a third adhesive layer 25; and the sixth copper-clad layer 18 is located on the lower surface of the fourth dielectric layer 22. The lower surfaces of the sixth copper-clad layer 18 of the transceiver antenna are assembled together by the fourth adhesive layer 26.

[0046] The third copper clad layer 15 serves as the ground plane of the patch, and it is connected to the first copper clad layer 13 through the third metallized via 9, forming a cavity around the patch and providing ground for the PIN diode switch 7.

[0047] The fourth copper clad layer 16, the fifth copper clad layer 17, and the sixth copper clad layer 18 constitute the transmission line structure of the stripline. Among them, the fourth copper clad layer 16 and the sixth copper clad layer 18 serve as the ground plane of the stripline and are connected together through a number of fifth metallized vias 8. Each fifth metallized via 8 is located on both sides of the power divider network 5, which confines the energy around the stripline and suppresses the generation of parallel planar waveguide modes.

[0048] The stripline ground plane is also connected to the third copper layer 15 through several fourth metallized vias 10, thereby ensuring the continuity of the ground plane structure. The fourth metallized vias 10 are vias that run through the entire antenna element. Specifically, they can be connected through the fourth copper layer 16, or through the sixth copper layer 18, or both can be connected to the third copper layer 15.

[0049] The fifth copper cladding layer 17 consists of a power divider network 5 and a 1-bit phase shifter 6. The starting end of the power divider network 5 is connected to the lower patch 2 through the second metallized via 4, and the end of the 1-bit phase shifter 6 is connected to the capacitive coupling structure 11 through the sixth metallized via 12.

[0050] In an embodiment of the present invention, a cutout is made in the sixth copper cladding layer 18, and the capacitive coupling structure 11 is arranged in the cutout position.

[0051] Furthermore, the 1-bit phase shifter 6 of the present invention is composed of a 3-dB directional coupler with one output port short-circuited or open-circuited, and a PIN diode switch 7 is applied to the output port. Specifically, the two output ports of the 1-bit phase shifter 6 are respectively connected to two microstrip lines of the first copper-clad layer 13 through the fourth metallized via 10. Each PIN diode switch 7 is connected in series on one microstrip line, and each PIN diode switch 7 has two states: closed and open, controlling the connection between the output port of the 1-bit phase shifter 6 and the ground. When the PIN diode switch 7 is closed, the output port of the 1-bit phase shifter 6 is short-circuited to ground; when the PIN diode switch 7 is open, the output port of the 1-bit phase shifter 6 is open-circuited.

[0052] In an embodiment of the present invention, the two input ports of the 1-bit phase shifter 6 are respectively cascaded with the power divider network 5 and the capacitive coupling structure 11, and the capacitive coupling structure 11 with orthogonal polarization of the transmit and receive antennas is placed opposite each other.

[0053] The operating frequency band selected in this embodiment is 27-29GHz, which belongs to the n257 band of 5G NR.

[0054] In this embodiment, the upper patch 1 and the lower patch 2 are selected as rectangular patch units with a length of approximately λ. g (Wavelength in the medium) / 2, operating in half-wavelength mode. A single transmit / receive antenna comprises four sets of double-layer stacked patch elements. A power divider network 5 divides the four sets of double-layer stacked patch elements of the transmit / receive unit into four equal power units (one-to-four / four-to-one). A 1-bit phase shifter 6 adds phase, enabling the antenna array to perform two-dimensional in-plane beam scanning. Each dielectric layer is a low-loss AeroWave 300 high-frequency board, and each adhesive layer is a low-loss AeroBond 300 board.

[0055] The technical solution of this invention is implemented as follows:

[0056] The upper patch 1 and the lower patch 2 resonate at two similar operating frequencies. Combining these two frequencies yields a wider operating bandwidth. Placing the double-layer stacked patches inside a cavity enclosed by metallized vias suppresses surface wave propagation, reduces mutual coupling between adjacent elements, and improves beam scanning performance. Furthermore, it allows for relative independence of the stacked patch area, enabling the design of DC bias and other structures outside the cavity, while the patch's radiation performance remains unaffected by other structures. A single antenna element's transmit / receive antenna comprises four sets of double-layer stacked patches. A power divider network 5 provides one-drive, four-feed power to these four sets of stacked patches. After combining, the power divider network 5 is cascaded with a 1-bit phase shifter 6 to add phase. Each 1-bit phase shifter 6 is connected to two PIN diode switches 7 with the same state. When the PIN diode switches 7 are open, the end stub of the 1-bit phase shifter 6 is open-circuited; when the PIN diode switches 7 are closed, the end stub of the 1-bit phase shifter 6 is short-circuited to ground. These two states correspond to the 0° and 180° phase of the 1-bit phase shifter, respectively. For ease of fabrication, the stub containing the PIN diode switches 7 is led to the top of the antenna through a metallized via. A capacitive coupling structure 11 is cascaded at the other port of the 1-bit phase shifter 6. This structure connects the transmitting and receiving antennas together. Using the capacitive coupling structure 11 avoids the need for complex buried via fabrication and isolates the DC path of the transmitting and receiving antennas.

[0057] The transmitting antenna is constructed using a similar one-to-four power divider, resulting in four stacked patches for equal-amplitude, in-phase excitation. The transmitting and receiving antennas undergo a polarization conversion via the power divider network. Based on the reciprocity principle of antenna transmission and reception, the transmission paths for both polarizations are identical. Thus, the 1-bit dual-polarization transmission array antenna unit for 5G millimeter-wave communication relay described in this invention achieves dual-polarization 2D beam scanning functionality for four patch units using only four PIN diode switches.

[0058] Figure 8 The insertion loss curves for the unit in two states show that the average insertion loss is between 2 and 4 dB in the operating frequency band, indicating that the antenna unit can effectively re-radiate the received energy into free space, and the loss caused by the unit is acceptable in practical engineering applications.

[0059] Figure 9 The phase shift curves of the unit in two states show that, within the operating frequency band, the phase difference between adjacent states of the unit remains within the range of 180°±20°. This indicates that the antenna unit can provide low quantization error within the operating frequency band, thereby providing high pointing accuracy and antenna gain. A certain deviation in quantization phase is considered acceptable in practical engineering applications.

[0060] Figure 10The curves for |S11| of the element are shown in two states. Within the operating frequency band, the element's |S11| remains basically below -10dB, indicating that the antenna matching is relatively good.

[0061] Figure 11 The cross-polarization of the cell in two states is shown. Within the operating frequency band, the cross-polarization of the cell is basically kept below -15dB, indicating that the polarization isolation of the cell is relatively high.

[0062] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. All equivalent changes and modifications made within the scope of the claims of the present invention shall fall within the scope of the claims of the present invention.

Claims

1. A 1-bit dual-polarized transmission array antenna element for 5G millimeter-wave communication relay, characterized in that, The antenna unit contains transceiver antennas with identical structures. The transceiver antennas are connected by a capacitive coupling structure (11) and are symmetrical about the x-axis at the geometric center of the antenna unit. A single receiving or transmitting antenna includes several upper patch (1) and several lower patch (2), with each upper patch (1) and each lower patch (2) arranged along the y-axis direction; the upper patch (1) and the lower patch (2) are stacked together in a one-to-one correspondence along the z-axis direction and located in a cavity surrounded by multiple first metallized vias (3); Below the lower patch (2) are cascaded power divider network (5) and 1-bit phase shifter (6). The lower patch (2) is connected to the power divider network (5) through the second metallized via (4). The two branches of the 1-bit phase shifter (6) are connected in series with a PIN diode switch (7) through a feed probe. The capacitive coupling structure (11) is cascaded at the end of the 1-bit phase shifter (6) through the sixth metallized via (12).

2. The 1-bit dual-polarized transmission array antenna element for 5G millimeter-wave communication relay according to claim 1, characterized in that, The antenna unit is symmetrical about the x-axis at the antenna geometric center, and is divided into transceiver antennas with identical structures at half the height of the antenna unit.

3. The 1-bit dual-polarized transmission array antenna element for 5G millimeter-wave communication relay according to claim 1, characterized in that, The upper patch (1) is located in the cutout position of the first copper layer (13), and the lower patch (2) is located in the cutout position of the second copper layer (14). The upper patch (1) and the lower patch (2) are stacked together, and a cavity is formed around the cutout position by the first metallized via (3). The two PIN diode switches (7) are set in the middle cutout position of the first copper layer (13) to control the state of the 1-bit phase shifter (6).

4. The 1-bit dual-polarized transmission array antenna element for 5G millimeter-wave communication relay according to claim 1 or 3, characterized in that, The upper patch (1) and the lower patch (2) are rectangular or a deformed rectangle. The two patches are stacked in the center of the cavity formed by the first metallized via (3). There is a medium gap between the two patches and between the patches and the cavity. The deformed rectangle includes: opening notches on one or more sides of the rectangle to form a groove, or connecting an extension portion.

5. The 1-bit dual-polarized transmission array antenna element for 5G millimeter-wave communication relay according to claim 3, characterized in that, Below the second copper clad layer (14), a third copper clad layer (15), a fourth copper clad layer (16), a fifth copper clad layer (17) and a sixth copper clad layer (18) are arranged in sequence; the third copper clad layer (15) serves as the ground plane of the patch, and is connected to the first copper clad layer (13) through the third metallized via (9), forming a cavity around the patch, and providing ground for the PIN diode switch (7); The fourth copper layer (16), the fifth copper layer (17), and the sixth copper layer (18) constitute the transmission line structure of the stripline; the fourth copper layer (16) and the sixth copper layer (18) serve as the ground plane of the stripline and are connected together through several fifth metallized vias (8), and are connected to the third copper layer (15) through several fourth metallized vias (10) to ensure the continuity of the ground plane structure. The fifth copper layer (17) consists of the power divider network (5) and the 1-bit phase shifter (6). The several fifth metallized vias (8) are located on both sides of the power divider network (5) to confine the energy around the stripline and suppress the generation of the parallel planar waveguide mode. The starting end of the power divider network (5) is connected to the lower patch (2) through the second metallized via (4), and the end of the 1-bit phase shifter (6) is connected to the capacitive coupling structure (11) through the sixth metallized via (12).

6. The 1-bit dual-polarized transmission array antenna element for 5G millimeter-wave communication relay according to claim 1, characterized in that, The 1-bit phase shifter (6) is composed of a 3-dB directional coupler with one output port short-circuited or open-circuited. The two output ports of the 1-bit phase shifter (6) are connected to two microstrip lines of the first copper layer (13) through the fourth metallized via (10). A PIN diode switch (7) is connected in series on each microstrip line. Each PIN diode switch (7) has two states: closed and open, which control the connection and disconnection between the output port of the 1-bit phase shifter (6) and the ground. When the PIN diode switch (7) is closed, the output port of the 1-bit phase shifter (6) is short-circuited to ground. When the PIN diode switch (7) is open, the output port of the 1-bit phase shifter (6) is open-circuited.

7. The 1-bit dual-polarized transmission array antenna element for 5G millimeter-wave communication relay according to claim 6, characterized in that, In a single receiving or transmitting antenna, there are four upper patch (1) and four lower patch (2), thereby forming four sets of double-layer stacked patch units. The dual-polarization 2D beam scanning function of the four sets of double-layer stacked patch units is realized by using four PIN diode switches (7).

8. The 1-bit dual-polarized transmission array antenna element for 5G millimeter-wave communication relay according to claim 1, characterized in that, The two input ports of the 1-bit phase shifter (6) are cascaded with the power divider network (5) and the capacitive coupling structure (11), respectively.

9. The 1-bit dual-polarized transmission array antenna element for 5G millimeter-wave communication relay according to claim 1, characterized in that, The upper patch (1) and the lower patch (2) resonate at two similar operating frequencies, and the two frequency points are combined to broaden their operating bandwidth.

10. The 1-bit dual-polarized transmission array antenna element for 5G millimeter-wave communication relay according to claim 1, characterized in that, The receiving antenna patch receives electromagnetic wave energy in free space. The energy enters the power divider network (5) through the second metallized via (4). The power divider network (5) combines the energy of several groups of patches and feeds it into a 1-bit phase shifter (6). After adding 1-bit phase through the 1-bit phase shifter (6), the electromagnetic wave energy is fed into the capacitive coupling structure (11) and coupled to the power divider network (5) of the transmitting antenna. The power divider network (5) of the transmitting antenna divides the energy into several parts and feeds them into several groups of patches of another polarized transmitting antenna, and finally radiates into free space.

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