Heat sink device, laser and device

Abstract

The present invention provides a heat sink device, a laser and a device, wherein the heat sink device comprises: a substrate, a first metal film layer and a second metal film layer; wherein the substrate comprises a first surface and a second surface arranged opposite to each other, the first surface is provided with the first metal film layer, and the second surface is provided with the second metal film layer; the thermal expansion coefficients of the first metal film layer and the second metal film layer are greater than the thermal expansion coefficient of the substrate; the average metal grain size in the first metal film layer and the second metal film layer is D μm, 0.5≤D≤20; the relationship between the substrate and the first metal film layer and the second metal film layer satisfies the following equation: 0.5≤D×(1+(V max / V min )‑(S2 / S1))≤45;V max V is the largest volume in the two metal film layers; min is a volume that is not too large; S2 is the area of ​​the side where the first metal film layer is connected to the substrate; S1 is the area of ​​the first surface of the substrate; S2 is not greater than S1. The heat sink device of the present invention has good stability, small deformation, and the laser has a stable performance effect.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor heat dissipation, and in particular to a heat sink device, a laser and a device. Background Art

[0002] In the prior art, a heat sink is a device used to dissipate heat from a semiconductor functional device. Specifically, some semiconductor functional devices (such as lasers) generate a large amount of heat during operation, and the heat dissipation efficiency of the current heat sink is not enough, resulting in a short operating time of, for example, a laser under rated power, which cannot meet the use requirements.

[0003] Therefore, there is a need for a method to solve the problems in the prior art. Summary of the invention

[0004] In view of the defects in the prior art, the present invention proposes a heat sink device, a laser and a device to solve the problems in the prior art.

[0005] An embodiment of the present invention provides a heat sink device, comprising: a substrate, a first metal film layer and a second metal film layer; wherein the substrate comprises a first surface and a second surface arranged opposite to each other, the first surface is provided with the first metal film layer, and the second surface is provided with the second metal film layer; the thermal expansion coefficients of the first metal film layer and the second metal film layer are greater than the thermal expansion coefficient of the substrate; the average metal grain size in the first metal film layer and the second metal film layer is D μm, 0.5≤D≤20; the relationship between the substrate and the first metal film layer and the second metal film layer satisfies the following equation: 0.5≤D ×(1+(V max / V min )-(S2 / S1))≤45; V1 is the volume of the first metal film layer; V2 is the volume of the second metal film layer; if V1 is not equal to V 2； V max is the larger of V1 and V2, V min The smaller of V1 and V2; if V1 is equal to V 2； V max V1,V min is V2; S2 is the area of ​​one side of the first metal film layer connected to the substrate; S1 is the area of ​​the first surface of the substrate; S2 is not greater than S1.

[0006] In a specific embodiment, the substrate and the first metal film layer and the second metal film layer also satisfy the relationship: 0.05≤H2 / H1≤0.6; wherein H2 is the sum of the thicknesses of the first metal film layer and the second metal film layer; and H1 is the thickness of the substrate.

[0007] In a specific embodiment, the projection area of ​​the first metal film layer on the substrate is the first projection area; the projection area of ​​the second metal film layer on the substrate is the second projection area; the first projection area completely covers the second projection area or the second projection area completely covers the first projection area.

[0008] In a specific embodiment, the first metal film layer and the second metal film layer satisfy the relationship 1≤V max / V min ≤1.7.

[0009] In a specific embodiment, the first metal film layer and the second metal film layer satisfy the relationship 1≤V max / V min ≤1.3.

[0010] In a specific embodiment, the substrate and the first metal film layer satisfy the relationship: 0.2≤S2 / S1≤1.

[0011] In a specific embodiment, the substrate and the first metal film layer satisfy the relationship: 0.6≤S2 / S1≤1.

[0012] In a specific embodiment, the substrate includes: an AlN / SiC ceramic plate; the material of the first metal film layer and the second metal film layer includes copper.

[0013] In a specific embodiment, the thickness range of the first metal film layer and / or the second metal film layer includes: 10-130 um.

[0014] In a specific embodiment, the thickness range of the first metal film layer and / or the second metal film layer includes: 80-100 um.

[0015] In a specific embodiment, the average metal grain size ranges from 0.6 to 10 um.

[0016] In a specific embodiment, a solder layer is further provided on a side of the first metal film layer away from the substrate.

[0017] In a specific embodiment, a barrier layer formed of titanium or titanium platinum is further provided between the solder layer and the first metal film layer.

[0018] In a specific embodiment, the solder layer includes: a gold-tin solder layer.

[0019] In a specific embodiment, the weight proportion of tin in the gold-tin solder layer is 18-32%; the weight proportion of gold is 68-82%.

[0020] In a specific embodiment, it also includes: a protective layer arranged on the side of the first metal film layer and / or the second metal film layer away from the substrate; the material of the protective layer includes nickel palladium gold and / or nickel gold and / or titanium platinum gold.

[0021] In a specific embodiment, a connecting layer formed of titanium or titanium-tungsten alloy is further provided between the first metal film layer and / or the second metal film layer and the substrate; the thickness of the connecting layer is less than the thickness of the first metal film layer or the thickness of the second metal film layer.

[0022] An embodiment of the present invention further provides a laser, comprising the above-mentioned heat sink device.

[0023] The embodiment of the present invention further provides a device, comprising the above-mentioned heat sink device.

[0024] Specifically, the present invention can effectively avoid excessive stress differences in each layer structure of the heat sink device by reasonably controlling the volume ratio parameters of the metal film layers on both sides of the substrate, the area ratio of the metal film layer to the substrate, and the grain size in the metal layer, thereby ensuring the structural stability of the heat sink device, avoiding the influence of structural deformation on heat dissipation, and ensuring the long-term stable operation of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0026] Figure 1 A schematic structural diagram of a heat sink device proposed in an embodiment of the present invention;

[0027] Figure 2 A schematic structural diagram of another heat sink device proposed in an embodiment of the present invention;

[0028] Figure 3 This is a schematic diagram of an electron backscatter diffraction pattern proposed in Example 1 of the present invention. DETAILED DESCRIPTION

[0029] In the following, various embodiments of the present disclosure will be described more fully. The present disclosure may have various embodiments, and adjustments and changes may be made therein. However, it should be understood that there is no intention to limit the various embodiments of the present disclosure to the specific embodiments disclosed herein, but rather the present disclosure should be understood to cover all adjustments, equivalents and / or alternatives that fall within the spirit and scope of the various embodiments of the present disclosure.

[0030] The terms used in the various embodiments of the present disclosure are only used for the purpose of describing specific embodiments and are not intended to limit the various embodiments of the present disclosure. As used herein, the singular form is intended to also include the plural form, unless the context clearly indicates otherwise. Unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as the meanings commonly understood by ordinary technicians in the field to which the various embodiments of the present disclosure belong. The terms (such as the terms defined in the generally used dictionary) will be interpreted as having the same meaning as the contextual meaning in the relevant technical field and will not be interpreted as having an idealized meaning or an overly formal meaning, unless clearly defined in the various embodiments of the present disclosure.

[0031] The heat sink device and the laser according to the present invention are described in detail below.

[0032] First, according to a first aspect of the present invention, a heat sink device is provided, such as Figure 1 or Figure 2 As shown, it includes: a substrate (such as Figure 1 , Figure 2 1) and the first metal film layer (such as Figure 1 , Figure 2 2 in the figure) and the second metal film layer (such as Figure 1 , Figure 2 3 in the figure); wherein, the first surface and the second surface are arranged opposite to each other, the first surface is provided with the first metal film layer, and the second surface is provided with the second metal film layer; the thermal expansion coefficient of the metal film layer (including the first metal film layer and the second metal film layer) is greater than the thermal expansion coefficient of the substrate; the average metal grain size in the metal film layer is D μm, 0.5≤D≤20; the relationship between the substrate and the metal film layer satisfies the following equation: 0.5≤D ×(1+(V max / V min )-(S2 / S1))≤45; V1 is the volume of the first metal film layer; V2 is the volume of the second metal film layer; if V1 is not equal to V 2； V max is the larger of V1 and V2, V min The smaller of V1 and V2; if V1 is equal to V 2； V max V1,V minis V2; S2 is the area of ​​the side where the first metal film layer is connected to the substrate; S1 is the area of ​​the first surface of the substrate. Specifically, the area of ​​any side of the first metal film layer is the same as or not much different from the area of ​​any side of the second metal film layer; specifically, the areas of both sides of the first metal film layer (the side connected to the substrate and the side away from the substrate) are the same or substantially the same, and the areas of both sides of the second metal film layer (the side connected to the substrate and the side away from the substrate) are the same or substantially the same, and the area of ​​any side of the first metal film layer and the area of ​​any side of the second metal film layer are not greater than the area of ​​any side of the substrate, for example, the ratio of the area of ​​any side of the first metal film layer to the area of ​​any side of the second metal film layer is 0.9-1.1. In addition, the thickness of the first metal film layer is consistent at all locations, and the thickness of the second metal film layer is consistent at all locations.

[0033] Specifically, the upper and lower sides of the substrate are provided with metal film layers; preferably, the substrate may include, for example, AlN / SiC (aluminum nitride / silicon carbide) ceramic plates; the material of the metal film layer may include, for example, copper. The thermal expansion coefficients of the substrate and the metal film layer are different. For example, under normal room temperature, the thermal expansion coefficient of the copper layer is 16×10 -6 / ℃, the thermal expansion coefficient of AlN / SiC ceramic plate is 4×10 -6 / ℃, further, the thermal expansion coefficient of the metal film layer is greater than that of the substrate. In actual application, the metal film layer will generate stress on the substrate, and the stress will eventually cause deformation of the entire heat sink device.

[0034] Specifically, by controlling the average metal grain size D of the metal film layer, the heat transfer coefficient and mechanical properties of the metal film layer can be affected (the better the mechanical properties, the smaller the corresponding deformation); and the change trend of D has opposite effects on the heat transfer coefficient and mechanical properties. Therefore, D needs to have a suitable value, which should not be too large or too small. The value range of the average metal grain size D is 0.5-20, which can well balance the heat transfer coefficient and mechanical properties.

[0035] By controlling 1+ (V max / V min )-(S2 / S1), it can affect the stress balance between the metal film layer and the substrate in the entire heat sink device. The more balanced the stress is, the smaller the deformation of the entire heat sink device will be. Furthermore, based on the consideration of optimizing the heat transfer efficiency of the entire heat sink device, it is found that D and 1+(V max / V min )-(S2 / S1) is related: Specifically, if D is large, then 1+(V max / V min )-(S2 / S1) needs to be small. On the contrary, if D is small, then 1+(V max / V min)-(S2 / S1) needs to be large; compared with controlling any of the above parameters alone, collaborative control can better optimize the final heat transfer efficiency of the entire heat sink device. Therefore, it is found that when the above formula of this application is met, the control effect is best.

[0036] Among them, (V max / V min ) reflects the relative size of the two metal film layers, (S2 / S1) reflects the relative size of the first metal film layer and the substrate. The difference between the two reflects the degree of stress balance between the substrate and the metal film layer. The smaller the difference, the more balanced the stress between the substrate and the metal film layer. Therefore, (1+(V max / V min )-(S2 / S1)) is small, the stress between the substrate and the metal film layer is in a balanced state, thereby making the deformation small. Therefore, the contact stability between the heat sink device and the connected semiconductor functional device can be guaranteed, and the contact area between the two will not be reduced, thereby not increasing the thermal resistance, so that the heat sink device will not affect the heat transfer efficiency.

[0037] Specifically, in addition to being related to the deformation amount, the heat transfer efficiency is also related to the heat transfer coefficient of the material itself, and the metal grain size is related to the deformation amount and the heat transfer coefficient. The trend of the average metal grain size affecting the deformation amount is just opposite to the average metal grain size affecting the heat transfer coefficient; therefore, the selection of a suitable average metal grain size is also very important. In this scheme, the metal grain size is limited to 0.5-20μm, which can comprehensively balance the deformation amount and the heat transfer coefficient, so that the overall heat sink device maintains a very small deformation amount and a higher heat transfer coefficient.

[0038] Therefore, D × (V max / V min When )-(S2 / S1) is too large, it will either lead to a large deformation or a low heat transfer coefficient, resulting in poor thermal conductivity, which will ultimately affect the heat transfer efficiency of the heat sink device.

[0039] D × (1 + (V max / V min If )-(S2 / S1)) is too small, it means that the metal grain size is too small, which leads to poor heat transfer of the metal film layer, and ultimately affects the heat transfer efficiency of the heat sink device.

[0040] Specifically, the deformation of the heat sink device can be measured by an optical interferometer or by scanning the overall deformation with a 3D profiler and measuring the height difference between the middle area and the edge area.

[0041] Furthermore, the substrate and the metal film layer also satisfy the relationship: 0.05≤H2 / H1≤0.6; wherein H2 is the sum of the thicknesses of the first metal film layer and the second metal film layer; and H1 is the thickness of the substrate.

[0042] Specifically, in order to further reduce the influence of stress, the present solution further limits the thickness relationship between the substrate and the metal film layer, specifically 0.05≤H2 / H1≤0.6; in this case, the stress difference generated between the substrate and the metal will be further reduced, which is conducive to the overall stress tending to be more balanced, further reducing the deformation caused by stress, and is conducive to the contact stability between the heat sink device and the connected semiconductor functional device, as well as the heat sink device maintaining heat transfer efficiency.

[0043] If the value of H2 / H1 is not within the range, for example, greater than 0.6, it will make it more difficult to balance the stress difference under a certain volume ratio or area ratio, thereby affecting the final deformation amount; if the value of H2 / H1 is too small, for example, less than 0.05, the thickness of the metal film layer is too thin, and the metal film layer itself is easily affected by the outside world (such as temperature), which may easily lead to an unstable connection with the base layer or difficulty in achieving a smooth connection, which will ultimately affect the heat transfer efficiency of the heat sink device.

[0044] In a specific embodiment, the projection area of ​​the first metal film layer on the substrate is the first projection area; the projection area of ​​the second metal film layer on the substrate is the second projection area; the first projection area completely covers the second projection area or the second projection area completely covers the first projection area.

[0045] Specifically, by setting the positions of the metal layers on both sides of the substrate, the stress of the heat sink device as a whole can be further balanced, thereby further reducing the deformation caused by the stress.

[0046] Specifically, the relationship between the two metal film layers satisfies 1≤V max / V min ≤1.7.

[0047] Specifically, the volume difference of the metal film layer will greatly affect the stress of the heat sink device. When the volume difference between the metal film layers on both sides of the base layer is large, it is easy to produce a large deformation on the heat sink device, thereby affecting the heat dissipation performance; when the volume difference between the metal film layers on both sides of the base layer is not large, the influence of the stress is relatively small and easy to balance, and thus it is not easy to affect the deformation of the heat sink device; therefore, in this scheme, it is limited that the relationship between the two metal film layers satisfies the relationship 1≤V max / V min≤1.7, that is, the volume ratio of the two metal film layers is within a relatively small range, that is, the volume difference of the two metal film layers is not too large, which makes the overall stress difference small and reduces the deformation of the entire heat sink device.

[0048] Furthermore, the first metal film layer and the second metal film layer satisfy the relationship 1≤V max / V min ≤1.3. Within this range, the overall stress difference is smaller, which is more conducive to reducing the deformation of the entire heat sink device.

[0049] Preferably, the relationship between the substrate and the metal film layer is: 0.2≤S2 / S1≤1. Specifically, the deformation of the heat sink device is caused by the difference in thermal expansion coefficients between the substrate and the metal film layer disposed on the substrate, and the area of ​​the metal film layer will not be larger than the area of ​​the substrate (if the area of ​​the metal film layer is larger than the area of ​​the substrate, the larger part will not affect the substrate, and in the specific process flow, the generation of the metal film layer needs to be based on the substrate, so the area of ​​the metal film layer will not be larger than the area of ​​the substrate). If the area difference between the metal film layer and the substrate is too large, it will more easily lead to stress imbalance in the entire heat sink device. Therefore, the area ratio between the metal film layer and the substrate is limited to between 0.2 and 1 in this application.

[0050] Furthermore, the relationship between the substrate and the metal film layer satisfies the following equation: 0.6≤S2 / S1≤1. Within this range, the entire heat sink device can more easily achieve stress balance.

[0051] In addition, the thickness range of the metal film layer includes: 10-130um.

[0052] It should be noted that the thickness of the metal film layer refers to the thickness of a single metal film layer, that is, the thickness of the first metal film layer or the second metal film layer.

[0053] The thickness of the metal film layer may be detected by conventional methods in the art, such as using a SEM (scanning electron microscope) thickness measurement method to perform multi-point tests on the metal film layer to obtain an average value, which is the thickness of the metal film layer.

[0054] Specifically, the metal film layer needs to be connected to an external semiconductor functional device, such as a laser. In this case, the flatness of the metal film layer itself is also very important. If the metal film layer is too low, for example, less than 10um, it is easy to cause the metal film layer to be uneven and deformed, thereby affecting the connection area with the connected semiconductor functional device and affecting heat dissipation. If the metal film layer is too thick, it is not easy to achieve in terms of process and the cost is high. Therefore, within the range of 10-130um, both process realization and heat dissipation effect can be taken into account.

[0055] Furthermore, the thickness of the metal film layer ranges from 80 to 100 um, within which both the process realization and the final heat dissipation effect can be better considered.

[0056] Specifically, the average grain size of the metal film layer ranges from 0.5 to 20 um.

[0057] Specifically, the material of the metal film layer includes copper. In this case, the average metal grain size in the metal film layer refers to the average grain size of metal copper, and the size range is 0.5-20um. The specific average grain size measurement method can be to prepare the sample by argon ion polishing, use SEM (Scanning Electron Microscope) + EBSD (Electron Back Scatter Diffraction, backscattered electron diffraction technology) to observe the crystallization, and use BC (Backscattered Electrons) + GB (Grain Boundary) to summarize the crystal size.

[0058] Specifically, a small average metal grain size will result in poor heat dissipation and good mechanical properties; while a large average metal grain size will improve the heat dissipation effect, but will result in poor mechanical properties. Based on this comprehensive consideration, this solution limits the average metal grain size range to 0.5-20um, combines the mechanical properties and the heat dissipation function of the metal film layer itself, reduces the deformation of the entire heat sink device, and ensures good heat dissipation effect.

[0059] Specifically, in the actual production process of the heat sink device, the grain size can be adjusted by controlling parameters in the production process such as temperature, deposition speed, deposition pressure, and current.

[0060] Furthermore, the range of the grain size includes: 0.6-10um. In this case, the mechanical properties and the heat dissipation effect of the metal film layer can be better taken into account.

[0061] Specifically, Figure 2 As shown, a solder layer is also provided on the side of the first metal film layer away from the substrate. The solder layer includes: a gold-tin solder layer (such as Figure 2 The gold-tin solder layer can ensure the connection while facilitating heat transfer and improving heat dissipation efficiency.

[0062] The weight proportion of tin in the gold-tin solder layer is 18-32%; the weight proportion of gold is 68-82%.

[0063] In addition, a barrier layer formed of titanium or titanium platinum is arranged between the solder layer and the metal film layer.

[0064] Furthermore, the heat sink device also includes: a protective layer disposed on the side of the first metal film layer and / or the second metal film layer away from the substrate; the material of the protective layer includes nickel palladium gold and / or nickel gold and / or titanium platinum gold. By providing the protective layer, the metal film layer can be better protected to avoid the volume change of the metal film layer or the decrease of heat dissipation efficiency caused by conditions such as oxidation, which is conducive to the long-term effective and stable operation of the heat sink device.

[0065] In addition, a connection layer formed of titanium or titanium-tungsten alloy is provided between the first metal film layer and / or the second metal film layer and the substrate; the thickness of the connection layer is smaller than the thickness of the first metal film layer or the thickness of the second metal film layer.

[0066] Secondly, a laser disclosed according to the second aspect of the present invention includes the heat sink device in embodiment 1.

[0067] Specifically, the laser chip of the laser is connected to a metal film layer in the heat sink device, for example, connected to the metal film layer located above the substrate. Specifically, the laser chip can be connected to the metal film layer located above the substrate through a gold-tin solder layer.

[0068] According to a third aspect of the present invention, a device is disclosed, which includes the heat sink device in Example 1.

[0069] The device may include semiconductor power devices, such as IGBT (Insulate-Gate Bipolar Transistor), AMB (Advanced Memory Buffer) chip, etc. In addition, the device in this solution can be any semiconductor component that requires heat dissipation, and is not limited to these specific ones.

[0070] The present application is further described below in conjunction with specific examples. It should be understood that these examples are only used to illustrate the present application and are not used to limit the scope of the present application.

[0071] The lasers of Examples 1-22 and Comparative Examples 1-7 were all prepared according to the following method.

[0072] 1. Material selection

[0073] The material of the ceramic layer, one of the options is aluminum nitride, whose thermal expansion coefficient is: 4×10 -6 / ℃, thermal conductivity is: 230W / (m·K), and its elastic modulus is: 360GPa; another option is to choose silicon carbide, whose thermal expansion coefficient is: 4.4×10 -6 / ℃, thermal conductivity: 360 W / (m·K); its elastic modulus: 440GPa;

[0074] The material of the metal film layer is copper, and its thermal expansion coefficient is: 16×10 -6 / ℃.

[0075] 2. Preparation of Ceramic Layer

[0076] Hot pressing sintering: The ceramic powder is sintered at high temperature to form a dense ceramic layer as a substrate with an average thickness of 400μm.

[0077] 3. Preparation of metal film layer

[0078] Metal film deposition: Electroplating: used to deposit metal film layers on the upper and lower sides of the ceramic layer, with the projection of the metal film layer deposited on the upper side of the ceramic layer being the first projection area, and the projection of the metal film layer deposited on the lower side of the ceramic layer being the second projection area, and the first projection area completely covering the second projection area or the second projection area completely covering the first projection area. By controlling the current density in the electroplating production process, the type of additives in the electroplating solution, etc., the average metal grain size in the metal film layer can be adjusted. Specifically, for example, when other conditions remain unchanged, the greater the current density used in the electroplating process, the larger the average metal grains in the metal film finally prepared; as for the additives in the electroplating solution, when other conditions remain unchanged, the higher the concentration of the brightener, the smaller the average metal grains in the metal film finally prepared; the greater the concentration of the leveling agent in the additive, the larger the average metal grains in the metal film finally prepared. Specifically, the metal grain size in the metal film finally generated can be adjusted by controlling the current density and / or adding additives.

[0079] The thickness of the metal film layer can be adjusted by increasing or shortening the electroplating time.

[0080] The thickness of the metal film layer is measured based on GB / T 31563-2015 Scanning electron microscope method for measuring the thickness of metal coating layers.

[0081] 4. Welding preparation

[0082] A gold-tin solder layer is set on the metal film layer on one side of the ceramic layer and welded to a laser chip (the component part used to emit laser, with a rated power of 45W) (specifically, the area of ​​the metal film layer welded to the laser chip is in a 3:1 relationship with the area of ​​the laser chip) to form a laser.

[0083] Next, we will conduct performance testing:

[0084] Test the deformation of the heat sink device in the entire laser chip and the working condition of the laser chip.

[0085] Specifically, the average metal grain size D is measured by the following method:

[0086] First, prepare the sample: cut the heat sink device to expose the cross section of the copper layer. Then obtain a flat surface through mechanical polishing + argon ion polishing; then observe it through EBSD in SEM. The EBSD observation details include taking any area (specifically within an area of ​​150*150um) as the sample micro-area; and testing the sample micro-area through the Oxford EBSD C-Swit+ device, and obtaining the following Figure 3 The electron backscatter diffraction pattern shown was analyzed using the Aztec Crystal software built into the Oxford EBSD C-Swit+ device to obtain the average metal grain size D.

[0087] As for the deformation of the heat sink device in the laser chip and the working condition of the laser chip, they are obtained in the following way:

[0088] After the laser chip is welded to the heat sink device, in a preset environment (at room temperature of about 20°C and relative humidity of 40%-60%), start the laser chip at rated power (power reaches 45W, with a fluctuation of 0.5W), and place the laser chip under the optical profile detection instrument (3D profiler) to start scanning. Set the stage / or local area as the reference plane, observe its 3D morphology, set a straight line, and measure along the long axis of the heat sink. Observe the entire metal surface on the heat sink along the length of the straight line. Observe the maximum change in the height of the heat sink under the straight line to characterize the deformation of the heat sink. Specifically, take the final inability of the laser chip to work as the cutoff time point, obtain the maximum deformation variable during the test, repeat the above process 5 times, and average the multiple maximum deformation variables obtained to obtain the final deformation variable.

[0089] As for the working condition, after the laser chip is welded to the heat sink device, the laser chip is started to work at rated power (power reaches 45W, with a fluctuation of 0.5W) and over-rated power (power reaches 55W, with a fluctuation of 0.5W) in a preset environment (room temperature around 20°C and relative humidity of 40%-60%). The time when the laser chip finally fails to work is used as the cutoff time point to obtain the duration of stable operation (that is, continuous working time) during the test. The process is also repeated 5 times. The final data obtained by averaging the obtained stable operation durations is used as an indicator of the working condition.

[0090] Table 1: Parameters and test results of Examples 1-22 and Comparative Examples 1-7

[0091]

[0092] Table 1

[0093]

[0094] Table 1

[0095]

[0096] Table 1

[0097]

[0098] In the laser chip prepared by the present embodiment, the deformation caused by the heat sink device is small, and the working condition of the laser is stable. Specifically, the deformation amount of the solution in which silicon carbide is selected as the ceramic layer is slightly smaller than the deformation amount of the solution in which aluminum nitride is selected as the ceramic layer. The thermal conductivity of silicon carbide is higher than the thermal conductivity of aluminum nitride. Generally speaking, the effect of the solution in which silicon carbide is selected as the ceramic layer is slightly better than that of the solution in which aluminum nitride is selected as the ceramic layer. Specifically, both of them can well meet the stable working requirements of the laser chip at the rated power for 300 hours, and can stably operate for more than 130 hours when the rated power is exceeded by 20%.

[0099] In the comparative example, compared with the embodiment, the parameters in the laser chip generated based on the comparative example do not satisfy the parameter relationship required to be protected in the present scheme. Even if the parameters meet their respective parameter ranges, the deformation of the heat sink device in the laser chip finally formed is large, which has seriously affected the heat dissipation of the laser chip. The working condition of the laser chip is unstable. At rated power and exceeding the rated power, the stable operation time is greatly shortened, which cannot meet the long-term stable operation needs of the laser chip.

[0100] The present invention can achieve a good stress balance of each layer structure in the heat sink device by reasonably controlling the volume ratio parameters of the metal film layers on both sides of the substrate, the area ratio of the metal film layer to the substrate, and the grain size in the metal layer, thereby ensuring the structural stability of the heat sink device, avoiding the influence of structural deformation on heat dissipation, and ensuring the long-term stable operation of the laser.

[0101] Those skilled in the art will appreciate that the accompanying drawings are merely schematic diagrams of a preferred implementation scenario, and the modules or processes in the accompanying drawings are not necessarily required for implementing the present invention.

[0102] Those skilled in the art will appreciate that the modules in the device in the implementation scenario can be distributed in the device in the implementation scenario according to the implementation scenario description, or can be changed accordingly and located in one or more devices different from the implementation scenario. The modules in the above implementation scenario can be combined into one module, or can be further split into multiple sub-modules.

[0103] The above serial numbers of the present invention are only for description and do not represent the advantages or disadvantages of the implementation scenarios.

[0104] The above disclosure is only a few specific implementation scenarios of the present invention, but the present invention is not limited thereto, and any changes that can be conceived by those skilled in the art should fall within the protection scope of the present invention.

Claims

1. A heat sink device, characterized in that: include: A substrate, a first metal film layer and a second metal film layer; wherein the substrate comprises a first surface and a second surface arranged opposite to each other, the first surface is provided with the first metal film layer, and the second surface is provided with the second metal film layer; The thermal expansion coefficients of the first metal film layer and the second metal film layer are greater than the thermal expansion coefficient of the substrate; the average metal grain size in the first metal film layer and the second metal film layer is D μm, 0.5≤D≤20; the relationship between the substrate and the first metal film layer and the second metal film layer satisfies the following equation: 0.5≤D × (1+ (V max / V min )-(S2 / S1))≤45; V1 is the volume of the first metal film layer; V2 is the volume of the second metal film layer; if V1 is not equal to V 2； V max is the larger of V1 and V2, V min The smaller of V1 and V2; if V1 is equal to V 2； V max V1,V min is V2; S2 is the area of ​​one side of the first metal film layer connected to the substrate; S1 is the area of ​​the first surface of the substrate; S2 is not greater than S1.

2. The heat sink device according to claim 1, characterized in that: The substrate and the first metal film layer and the second metal film layer also satisfy the relationship: 0.05≤H2 / H1≤0.6; wherein H2 is the sum of the thicknesses of the first metal film layer and the second metal film layer; and H1 is the thickness of the substrate.

3. The heat sink device according to claim 1, characterized in that: The projection area of ​​the first metal film layer on the substrate is the first projection area; the projection area of ​​the second metal film layer on the substrate is the second projection area; the first projection area completely covers the second projection area or the second projection area completely covers the first projection area.

4. The heat sink device according to claim 1, characterized in that: The first metal film layer and the second metal film layer satisfy the relationship 1≤V max / V min ≤1.

7.

5. The heat sink device according to claim 1 or 4, characterized in that: The first metal film layer and the second metal film layer satisfy the relationship 1≤V max / V min ≤1.

3.

6. The heat sink device according to claim 1, characterized in that: The substrate and the first metal film layer satisfy the relationship: 0.2≤S2 / S1≤1.

7. The heat sink device according to any one of claims 1, 4 and 6, characterized in that: The substrate and the first metal film layer satisfy the relationship: 0.6≤S2 / S1≤1.

8. The heat sink device according to claim 1, characterized in that: The substrate includes: an AlN / SiC ceramic plate; the material of the first metal film layer and the second metal film layer includes copper.

9. The heat sink device according to claim 1, characterized in that: The thickness range of the first metal film layer and / or the second metal film layer includes: 10-130 um.

10. The heat sink device according to claim 1 or 9, characterized in that: The thickness range of the first metal film layer and / or the second metal film layer includes: 80-100 um.

11. The heat sink device according to claim 1, characterized in that: The average metal grain size ranges from 0.6 to 10 um.

12. The heat sink device according to claim 1, characterized in that: A solder layer is also provided on a side of the first metal film layer away from the substrate.

13. The heat sink device according to claim 12, characterized in that: A barrier layer formed of titanium or titanium platinum is also arranged between the solder layer and the first metal film layer.

14. The heat sink device according to claim 12, characterized in that: The solder layer includes: a gold-tin solder layer.

15. The heat sink device according to claim 14, characterized in that: The weight proportion of tin in the gold-tin solder layer is 18-32%; the weight proportion of gold is 68-82%.

16. The heat sink device according to claim 1, characterized in that: Also includes: A protective layer disposed on a side of the first metal film layer and / or the second metal film layer away from the substrate; The material of the protective layer includes nickel-palladium-gold and / or nickel-gold and / or titanium-platinum-gold.

17. The heat sink device according to claim 1, characterized in that: A connection layer formed of titanium or titanium-tungsten alloy is further provided between the first metal film layer and / or the second metal film layer and the substrate; the thickness of the connection layer is smaller than the thickness of the first metal film layer or the thickness of the second metal film layer.

18. A laser, characterized in that: The heat sink device comprises any one of claims 1-17.

19. A semiconductor power device, characterized in that: The heat sink device comprises any one of claims 1-17.

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