Broadband receiver RF front-end structure

Abstract

This invention provides a broadband receiver RF front-end structure. In low-noise amplifier mode, the power control module outputs power supply voltage Vdd, the output bias control module outputs power supply voltage Vdd, the input bias module outputs bias voltage Vb, and the ground control module outputs ground GND. In direct-switch receiver mode, the power control module outputs ground GND, the output bias control module outputs power supply voltage Vdd, the input bias module outputs power supply voltage Vdd, and the ground control module outputs ground GND. In diversity receiver switch-off mode, the power control module outputs power supply voltage Vdd, the output bias control module outputs ground GND, the input bias module outputs ground GND, and the ground control module outputs power supply voltage Vdd. This invention improves system complexity, saves space and cost, optimizes power consumption and RF signal chain path, and improves insertion loss and noise characteristics.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a broadband receiving radio frequency front-end structure. Background Technology

[0002] With the development and application of communication technology, the radio frequency front end needs to support more and wider frequency bands. Its front-end radio frequency structure is becoming more and more complex, requiring the design of radio frequency devices to support multi-mode and multi-frequency integration, device function reuse and digital reconfigurable applications, so as to reduce the complexity of the radio frequency front end structure, optimize radio frequency performance and power consumption, reduce device cost and save PCB space.

[0003] Please see Figure 1 The existing broadband receiver RF front-end structure mainly consists of a broadband common-gate low-noise amplifier with a bypass switch and a diversity receiver switch. Each functional module is composed separately, resulting in a complex system structure. This is not conducive to power consumption optimization, system integration, and the reuse of device functions and digital reconfigurability to reduce costs. At the same time, the RF signal link is relatively long, resulting in greater insertion loss and noise.

[0004] To solve the above problems, a novel broadband receiver radio frequency front-end structure needs to be proposed. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a broadband receiving radio frequency front-end structure to solve the problems of the prior art where each functional module of the broadband receiving radio frequency front-end structure is composed separately, the system structure is complex, which is not conducive to power consumption optimization, system integration and device function reuse and digital reconfigurability to reduce costs, and the radio frequency signal link is long, with large insertion loss and noise.

[0006] To achieve the above and other related objectives, the present invention provides a broadband receiving radio frequency front-end structure, comprising:

[0007] An input MOSFET and an output MOSFET are provided, with the drain of the output MOSFET connected to its source.

[0008] The source of the input MOSFET is connected to a first inductor, and the drain of the output MOSFET is connected to a second inductor. The RF input signal RFin is connected between the drain of the input MOSFET and the first terminal of the first inductor through a first input matching network. A second input matching network is connected between the drain of the output MOSFET and the first terminal of the second inductor.

[0009] The power control module, input bias module, output bias control module, and grounding control module; among them,

[0010] The power control module selects either the power supply voltage Vdd or the ground terminal GND to connect to the second terminal of the second inductor based on the control signal.

[0011] The output bias control module selects the power supply voltage Vdd or the ground terminal GND according to the control signal and connects it to the gate of the output MOSFET through the first bias.

[0012] The input bias module selects the power supply voltage Vdd, bias voltage Vb, or ground terminal GND according to the control signal and connects to the gate of the input MOSFET through the second bias.

[0013] The grounding control module selects either the power supply voltage Vdd or the grounding terminal GND to connect to the second terminal of the first inductor based on the control signal.

[0014] When the power control module outputs the power supply voltage Vdd, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the voltage Vb, and the ground control module outputs the ground terminal GND, the broadband receiving RF front-end structure is in low-noise amplifier operating mode.

[0015] When the power control module outputs ground GND, the output bias control module outputs power supply voltage Vdd, the input bias module outputs power supply voltage Vdd, and the ground control module outputs ground GND, the broadband receiving RF front-end structure is in a through-switch receiving mode.

[0016] When the power control module outputs the power supply voltage Vdd, the output bias control module outputs the ground terminal GND, the input bias module outputs the ground terminal GND, and the ground control module outputs the power supply voltage Vdd, the broadband receiving RF front-end structure is in diversity receiving switch off working mode.

[0017] Preferably, the power control module includes a first inverter, whose input terminal is connected to a first control signal, its output terminal is connected to the second terminal of a second inductor, its power supply terminal is connected to the power supply voltage Vdd, and its ground terminal is grounded.

[0018] Preferably, the input bias module includes a second to a fifth inverter; the input terminal of the second inverter is connected to a first control signal, the output terminal of the second inverter is connected to the input terminal of the third inverter, the output terminal of the third inverter is connected to the gate of the input MOS transistor, and the power supply terminal of the third inverter is connected to the power supply voltage Vdd; the input terminal of the fourth inverter is connected to the second control signal, the output terminal of the fourth inverter is connected to the input terminal of the fifth inverter, the output terminal of the fifth inverter is connected to the ground terminal of the third inverter, the power supply terminal of the fifth inverter is connected to the bias voltage Vb, and the ground terminal of the fifth inverter is grounded.

[0019] Preferably, the output bias module is an OR gate, with its two input terminals connected to the first and second control signals respectively, and its output terminal connected to the gate of the output MOS transistor.

[0020] Preferably, the grounding control module is a sixth inverter, whose input terminal is connected to the second control signal and whose output terminal is connected to the second terminal of the first inductor.

[0021] Preferably, when the first control signal is low and the second control signal is high, the power control module outputs the power supply voltage Vdd, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the voltage Vb, the ground control module outputs the ground terminal GND, and the broadband receiving RF front-end structure is in low-noise amplifier operating mode.

[0022] Preferably, when both the first and second control signals are at a high level, the power control module outputs ground GND, the output bias control module outputs power supply voltage Vdd, the input bias module outputs power supply voltage Vdd, the ground control module outputs ground GND, and the broadband receiving RF front-end structure is in a through-switch receiving mode.

[0023] Preferably, when both the first and second control signals are at low level, the power control module outputs the power supply voltage Vdd, the output bias control module outputs the ground terminal GND, the input bias module outputs the ground terminal GND, the ground control module outputs the power supply voltage Vdd, and the broadband receiving RF front-end structure is in diversity receiving switch off working mode.

[0024] As described above, the broadband receiving radio frequency front-end structure of the present invention has the following beneficial effects:

[0025] This invention provides a collaborative optimization design for the power supply, source-level grounding, and input and output stage bias control of a common-gate broadband low-noise amplifier. This design enables the broadband low-noise amplifier to achieve a broadband receiver RF front-end structure with equivalent wideband receiver RF front-end structure through device function reuse and digital reconstruction. It also enables the amplifier to operate in a pass-through switch and diversity receiver switch-off mode, thereby improving system complexity, saving space and cost, optimizing power consumption and RF signal chain path, and improving insertion loss and noise characteristics. Attached Figure Description

[0026] Figure 1 The diagram shown is a schematic representation of a broadband receiving radio frequency front-end structure in the prior art.

[0027] Figure 2 The diagram shown is a schematic diagram of the broadband receiving radio frequency front-end module of the present invention.

[0028] Figure 3 The diagram shown is a schematic diagram of the broadband receiving radio frequency front-end circuit structure of the present invention.

[0029] Figure 4 This diagram illustrates the method of adjusting the working mode using the first and second control signals of the present invention.

[0030] Figure 5The diagram shows the three working modes of the present invention.

[0031] Figure 6 The diagram shown is a functional verification schematic of the broadband receiving radio frequency front-end circuit of the present invention. Detailed Implementation

[0032] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0033] Please see Figure 2 The present invention provides a broadband receiving radio frequency front-end structure, comprising:

[0034] The input MOSFET and the output MOSFET are connected together, with the drain of the output MOSFET connected to the source of the output MOSFET.

[0035] The source of the input MOSFET is connected to a first inductor, and the drain of the output MOSFET is connected to a second inductor. The RF input signal RFin is connected between the drain of the input MOSFET and the first terminal of the first inductor through a first input matching network. A second input matching network is connected between the drain of the output MOSFET and the first terminal of the second inductor.

[0036] The power control module, input bias module, output bias control module, and grounding control module; among them,

[0037] The power control module selects either the power supply voltage Vdd or the ground terminal GND to connect to the second terminal of the second inductor based on the control signal.

[0038] The output bias control module selects the power supply voltage Vdd or the ground terminal GND according to the control signal and connects it to the gate of the output MOSFET through the first bias.

[0039] The input bias module selects the power supply voltage Vdd, bias voltage Vb, or ground terminal GND according to the control signal and connects to the gate of the input MOSFET through the second bias. It should be noted that the first and second biases are set according to actual needs, and the resistance values ​​of the bias resistors do not need to be equal.

[0040] The grounding control module selects either the power supply voltage Vdd or the grounding terminal GND to connect to the second terminal of the first inductor based on the control signal.

[0041] When the power control module outputs the power supply voltage Vdd, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the voltage Vb, and the ground control module outputs the ground terminal GND, the broadband receiving RF front-end structure is in low-noise amplifier operating mode.

[0042] When the power control module outputs ground GND, the output bias control module outputs power supply voltage Vdd, the input bias module outputs power supply voltage Vdd, and the ground control module outputs ground GND, the broadband receiving RF front-end structure is in a through-switch receiving mode.

[0043] When the power control module outputs the power supply voltage Vdd, the output bias control module outputs the ground terminal GND, the input bias module outputs the ground terminal GND, and the ground control module outputs the power supply voltage Vdd, the broadband receiving RF front-end structure is in diversity receiving switch off working mode.

[0044] The design of power supply, source-level grounding, and input and output stage bias control of a common-gate broadband low-noise amplifier is optimized. This enables the broadband low-noise amplifier to achieve a broadband receiver RF front-end structure with equivalent broadband receiver RF front-end structure, including device function reuse, direct-switch receiver, and diversity receiver switch-off modes. This improves system complexity, saves space and cost, optimizes power consumption and RF signal chain path, and improves insertion loss and noise characteristics.

[0045] Specifically, the following section provides a detailed description of a circuit structure of one embodiment:

[0046] Figure 3 The specific structure of each module in one embodiment is shown. Figure 4 This embodiment illustrates a method for adjusting the operating mode using first and second control signals. Figure 5 The circuit structure for three operating modes is shown.

[0047] In an embodiment of the present invention, the power control module includes a first inverter 101, whose input terminal is connected to a first control signal A, its output terminal is connected to the second terminal of a second inductor, its power supply terminal is connected to the power supply voltage Vdd, and its ground terminal is grounded.

[0048] In an embodiment of the present invention, the input bias module includes second to fifth inverters; the input terminal of the second inverter 102 is connected to the first control signal A, the output terminal of the second inverter 102 is connected to the input terminal of the third inverter 103, the output terminal of the third inverter 102 is connected to the gate of the input MOS transistor, and the power supply terminal of the third inverter 102 is connected to the power supply voltage Vdd; the input terminal of the fourth inverter 104 is connected to the second control signal B, the output terminal of the fourth inverter 104 is connected to the input terminal of the fifth inverter 105, the output terminal of the fifth inverter 105 is connected to the ground terminal of the third inverter 103, the power supply terminal of the fifth inverter 105 is connected to the power supply voltage Vb, and the ground terminal of the fifth inverter 105 is grounded.

[0049] In an embodiment of the present invention, the output bias module is an OR gate, with its two input terminals connected to the first and second control signals respectively, and its output terminal connected to the gate of the output MOS transistor.

[0050] In an embodiment of the present invention, the grounding control module is a sixth inverter 106, whose input terminal is connected to the second control signal B, and whose output terminal is connected to the second terminal of the first inductor.

[0051] In an embodiment of the present invention, when the first control signal A is low and the second control signal B is high, the power control module outputs the power supply voltage Vdd, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the voltage Vb, the ground control module outputs the ground terminal GND, and the broadband receiving RF front-end structure is in low-noise amplifier operating mode.

[0052] In an embodiment of the present invention, when both the first and second control signals are at a high level, the power control module outputs ground terminal GND, the output bias control module outputs power supply voltage Vdd, the input bias module outputs power supply voltage Vdd, the ground control module outputs ground terminal GND, and the broadband receiving RF front-end structure is a through-switch receiving mode.

[0053] In an embodiment of the present invention, when both the first and second control signals are at a low level, the power control module outputs a power supply voltage Vdd, the output bias control module outputs a ground terminal GND, the input bias module outputs a ground terminal GND, the ground control module outputs a power supply voltage Vdd, and the broadband receiving RF front-end structure is in diversity receiving switch off working mode.

[0054] Please see Figure 6 It demonstrates the functional verification of the broadband receiver RF front-end circuit, and realizes the broadband low-noise amplifier reception, through-switch reception and diversity reception switch off working modes of the broadband receiver RF front-end structure through control.

[0055] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0056] In summary, this invention provides a collaborative optimization design for the power supply, source-level grounding, and input / output stage bias control of a common-gate broadband low-noise amplifier. This enables the broadband low-noise amplifier to achieve a broadband receiver RF front-end structure with equivalent wideband receiver functionality, pass-through receiver, and diversity receiver switch-off operating modes, thus improving system complexity, saving space and cost, and optimizing power consumption and RF signal chain paths to improve insertion loss and noise characteristics. Therefore, this invention effectively overcomes the various shortcomings of existing technologies and has high industrial applicability.

[0057] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A broadband receiving radio frequency front-end structure, characterized in that, include: An input MOSFET and an output MOSFET are provided, with the drain of the input MOSFET connected to the source of the output MOSFET. The source of the input MOSFET is connected to a first inductor, and the drain of the output MOSFET is connected to a second inductor. The RF input signal RFin is connected between the source of the input MOSFET and the first terminal of the first inductor through a first input matching network. A second input matching network is connected between the drain of the output MOSFET and the first terminal of the second inductor. The power control module, input bias module, output bias control module, and grounding control module; among them, The power control module selects either the power supply voltage Vdd or the ground terminal GND to connect to the second terminal of the second inductor based on the control signal. The output bias control module selects the power supply voltage Vdd or the ground terminal GND according to the control signal and connects it to the gate of the output MOSFET through the first bias. The input bias module selects the power supply voltage Vdd, bias voltage Vb, or ground terminal GND according to the control signal and connects to the gate of the input MOSFET through the second bias. The grounding control module selects either the power supply voltage Vdd or the grounding terminal GND to connect to the second terminal of the first inductor based on the control signal. When the power control module outputs the power supply voltage Vdd, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the voltage Vb, and the ground control module outputs the ground terminal GND, the broadband receiving RF front-end structure is in low-noise amplifier operating mode. When the power control module outputs ground GND, the output bias control module outputs power supply voltage Vdd, the input bias module outputs power supply voltage Vdd, and the ground control module outputs ground GND, the broadband receiving RF front-end structure is in a through-switch receiving mode. When the power control module outputs the power supply voltage Vdd, the output bias control module outputs the ground terminal GND, the input bias module outputs the ground terminal GND, and the ground control module outputs the power supply voltage Vdd, the broadband receiving RF front-end structure is in diversity receiving switch off working mode.

2. The broadband receiving radio frequency front-end structure according to claim 1, characterized in that: The power control module includes a first inverter, whose input terminal is connected to a first control signal, its output terminal is connected to the second terminal of a second inductor, its power supply terminal is connected to the power supply voltage Vdd, and its ground terminal is grounded.

3. The broadband receiving radio frequency front-end structure according to claim 2, characterized in that: The input bias module includes second to fifth inverters; the input terminal of the second inverter is connected to the first control signal, the output terminal of the second inverter is connected to the input terminal of the third inverter, the output terminal of the third inverter is connected to the gate of the input MOS transistor, and the power supply terminal of the third inverter is connected to the power supply voltage Vdd; the input terminal of the fourth inverter is connected to the second control signal, the output terminal of the fourth inverter is connected to the input terminal of the fifth inverter, the output terminal of the fifth inverter is connected to the ground terminal of the third inverter, the power supply terminal of the fifth inverter is connected to the bias voltage Vb, and the ground terminal of the fifth inverter is grounded.

4. The broadband receiving radio frequency front-end structure according to claim 3, characterized in that: The output bias control module is an OR gate, with its two input terminals connected to the first and second control signals respectively, and its output terminal connected to the gate of the output MOS transistor.

5. The broadband receiving radio frequency front-end structure according to claim 4, characterized in that: The grounding control module is a sixth inverter, whose input terminal is connected to the second control signal and whose output terminal is connected to the second terminal of the first inductor.

6. The broadband receiving radio frequency front-end structure according to claim 5, characterized in that: When the first control signal is low and the second control signal is high, the power control module outputs the power supply voltage Vdd, the output bias control module outputs the power supply voltage Vdd, the input bias module outputs the voltage Vb, the ground control module outputs the ground terminal GND, and the broadband receiving RF front-end structure is in low-noise amplifier operating mode.

7. The broadband receiving radio frequency front-end structure according to claim 5, characterized in that: When both the first and second control signals are high, the power control module outputs ground GND, the output bias control module outputs power supply voltage Vdd, the input bias module outputs power supply voltage Vdd, the ground control module outputs ground GND, and the broadband receiving RF front-end structure is a through-switch receiving mode.

8. The broadband receiving radio frequency front-end structure according to claim 5, characterized in that: When both the first and second control signals are low, the power control module outputs the power supply voltage Vdd, the output bias control module outputs the ground terminal GND, the input bias module outputs the ground terminal GND, the ground control module outputs the power supply voltage Vdd, and the broadband receiving RF front-end structure is in diversity receiving switch off working mode.

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