Teng-based super-steep sub-threshold swing field transistor, processing method and application

Abstract

This invention relates to the field of electric double-layer transistor technology, specifically to a TENG-based ultra-steep subthreshold swing field transistor, its fabrication method, and its applications. The TENG-based ultra-steep subthreshold swing field transistor of this invention includes: a transistor assembly and a TENG assembly. This invention utilizes the TENG assembly to generate a voltage V applied to the gate. G This replaces the supply voltage applied to the gate of existing field-effect transistors; V G It can vary with the adjustment of the TENG component and make the current I flowing from the source through the semiconductor layer to the drain. DS During the process of gradually changing from a positive voltage to a negative voltage, the negative voltage threshold V is reached. 负 The invention addresses the issue of ultra-steep subthreshold swing field transistors exhibiting abrupt changes near the time threshold. It facilitates gate self-powering and direct interaction between external motion and electronic components, simplifying structural integration. This invention solves the integration difficulty inherent in existing ultra-steep subthreshold swing field transistors that rely on external power supplies as gate voltages.

Description

Technical Field

[0001] This invention relates to the field of electric double-layer transistor technology, and particularly to: 1. an ultra-steep subthreshold swing field transistor based on TENG (triboelectric nanogenerator); 2. a fabrication method for the ultra-steep subthreshold swing field transistor; and 3. the application of the ultra-steep subthreshold swing field transistor as an artificial synapse. Background Technology

[0002] When describing subthreshold swing, conventional field-effect transistors are typically limited to 60mV / decade, while ultra-steep subthreshold swing transistors can achieve this value at room temperature, which is of great significance for reducing power consumption, improving performance, and meeting the needs of modern electronic devices.

[0003] However, most existing ultra-steep subthreshold swing field transistors use an external power supply as the gate voltage, which makes integration difficult and also makes ultra-steep subthreshold swing field transistors lack a direct interaction mechanism with the external environment. Summary of the Invention

[0004] To address the high integration difficulty of existing ultra-steep subthreshold swing field transistors (UTPs) due to the use of an external power supply as the gate voltage, this invention provides an ultra-steep subthreshold swing field transistor based on TENG, its fabrication method, and its applications.

[0005] This invention is achieved using the following technical solution:

[0006] In a first aspect, the present invention discloses an ultra-steep subthreshold swing field transistor based on TENG, comprising: a transistor component and a TENG component.

[0007] The transistor assembly is an NMOS type. The transistor assembly includes: a substrate, a semiconductor layer, a gate dielectric layer, a drain, a source, and a gate. The substrate, semiconductor layer, gate dielectric layer, and gate are stacked sequentially. The drain and source are connected to the side of the semiconductor layer facing away from the substrate and are separated by the gate dielectric layer. The gate is not in contact with either the drain or source. There is a potential difference between the drain and source. The gate is an Al electrode with an Al2O3 oxide layer on its surface. The gate dielectric layer is an ionomer gel.

[0008] The TENG component is used to regulate the voltage V applied to the gate. G The TENG component includes a static friction layer and a dynamic friction layer. The dynamic friction layer is electrically connected to the source; the static friction layer is electrically connected to the gate. The static and dynamic friction layers have different electron binding capacities. The dynamic friction layer is used to move under the action of an external force F, thereby changing the distance between the dynamic and static friction layers and simultaneously changing V. G .

[0009] Among them, in V GDuring the process of gradually changing from a positive voltage to a negative voltage, I DS Reaching the negative voltage threshold V 负 Extremely steep mutations occur; I DS This represents the current flowing from the source through the semiconductor layer to the drain.

[0010] The implementation of this TENG-based ultra-steep subthreshold swing field transistor is carried out according to the method or process of embodiments of the present disclosure.

[0011] In a second aspect, the present invention discloses a method for fabricating an ultra-steep subthreshold swing field transistor based on TENG, comprising:

[0012] Step 1: Fabricate transistor components and TENG components respectively;

[0013] The processing method for transistor components includes:

[0014] Semiconductor material is sputtered onto one side of substrate one under vacuum conditions using a mask magnetron sputtering technique to form a semiconductor layer;

[0015] The source and drain electrodes are mounted on the side of the semiconductor layer that faces away from the substrate.

[0016] An Al electrode with an Al2O3 oxide layer on its surface is used as a gate, and an ion gel is coated on one side of the gate to form a gate dielectric layer.

[0017] The gate is disposed on the side of the semiconductor layer away from the substrate, and the gate dielectric layer is made to contact the side of the semiconductor layer away from the substrate, while the source and drain are separated, and the gate is not in contact with either the drain or the source.

[0018] Step 2: Electrically connect the dynamic friction layer to the source and the static friction layer to the gate, and apply an electromotive force to the source and drain to form an ultra-steep subthreshold swing field transistor based on TENG.

[0019] The implementation of this method for fabricating ultra-steep subthreshold swing field transistors based on TENGs is according to the method or process of embodiments of this disclosure.

[0020] Thirdly, this invention discloses the application of the TENG-based ultra-steep subthreshold swing field transistor of the first aspect:

[0021] The first aspect uses the TENG-based ultra-steep subthreshold swing field transistor as an artificial synapse;

[0022] Among them, the external mechanical stimulation received by the artificial synapse is referred to as F;I DS Postsynaptic current generated by artificial synapses.

[0023] The present invention has the following beneficial effects:

[0024] 1. This invention provides an ultra-steep subthreshold swing field transistor based on a TENG (Transformer Engyl Generator), utilizing a TENG component to generate a voltage V applied to the gate. G This replaces the supply voltage applied to the gate of existing field-effect transistors; V G It can vary with the adjustment of the TENG component and make the current I flowing from the source through the semiconductor layer to the drain. DS During the process of gradually changing from a positive voltage to a negative voltage, the negative voltage threshold V is reached. 负 The ultra-steep abrupt change occurs; the ultra-steep subthreshold swing field transistor based on TENG facilitates gate self-powering and direct interaction between external motion and electronic devices, making structural integration easier.

[0025] 2. This invention utilizes the positive charge trapping effect of the gate oxide layer to provide auxiliary enhancement when a positive voltage is generated in the TENG component, enabling it to operate stably even at low voltages; and utilizes the high capacitance characteristics of the gate dielectric layer to improve the sensitivity of the semiconductor layer.

[0026] 3. The structure of this invention is easy to process, easy to manufacture and integrate, and has an optimistic market prospect.

[0027] 4. This invention establishes a connection between external mechanical stimulation and internal signals through the TENG component, and can generate signals similar to the postsynaptic current of biological synapses, thus realizing the application of artificial synapses. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a schematic diagram of the structure of the ultra-steep subthreshold swing field transistor based on TENG provided in Embodiment 1 of the present invention;

[0030] Figure 2 for Figure 1 TENG-based ultra-steep subthreshold swing field transistor in V G This is the state diagram under positive voltage.

[0031] Figure 3 for Figure 1 TENG-based ultra-steep subthreshold swing field transistor in V G When the change occurs, the corresponding I DS curve;

[0032] Figure 4for Figure 1 The transfer characteristic curves of the TENG-based ultra-steep subthreshold swing field transistor when the TENG component is in operation;

[0033] Figure 5 for Figure 1 The postsynaptic current map generated when the TENG-based ultra-steep subthreshold swing field transistor is used as an artificial synapse;

[0034] Figure 6 for Figure 1 The relationship between the double-pulse facilitation index and the pulse interval when the TENG-based ultra-steep subthreshold swing field transistor is used as an artificial synapse.

[0035] The attached diagram lists the components represented by each number as follows:

[0036] 10. Substrate 1, 20. Semiconductor layer, 30. Gate dielectric layer, 31. Drain, 32. Source, 33. Al electrode, 34. Al2O3 oxide layer, 41. Static tribology layer, 42. Dynamic tribology layer, 43. Substrate 3, 50. External power supply. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0038] Example 1

[0039] See Figure 1 This embodiment 1 provides a schematic diagram of the structure of a TENG-based ultra-steep subthreshold swing field transistor, which includes: a transistor component and a TENG component.

[0040] 1. First of all, it should be noted that the transistor component is of the NMOS type - when it is turned on, the current flows from the source 32 to the drain 31.

[0041] See Figure 1 The transistor assembly includes: a substrate 10, a semiconductor layer 20, a gate dielectric layer 30, and a drain 31 (i.e., Figure 1 D in the middle), source 32 (i.e. Figure 1 (S) and gate.

[0042] The substrate 10, semiconductor layer 20, gate dielectric layer 30, and gate electrode are stacked sequentially. For example... Figure 1 As shown, from top to bottom, they are: gate, gate dielectric layer 30, semiconductor layer 20, and substrate 10.

[0043] Drain 31 and source 32 are connected to the side of semiconductor layer 20 facing away from substrate 10 and are separated by gate dielectric layer 30. It should be noted that drain 31 and source 32 form an ohmic contact with semiconductor layer 20.

[0044] The gate is not in contact with either the drain 31 or the source 32. For example... Figure 1 As shown, the gate is lifted up by the gate dielectric layer 30, so that it avoids the drain 31 and the source 32.

[0045] The drain 31 and the source 32 have a potential difference (generally achieved by connecting an external power supply, which serves as the working power supply for the drain 31 and the source 32. Specifically, the connection can be set as follows: the drain 31 is electrically connected to the positive terminal of the external power supply, and the source 32 is electrically connected to the negative terminal of the external power supply).

[0046] It should be noted that the gate electrode should be an Al electrode 33 with an Al2O3 oxide layer 34 on its surface; the gate dielectric layer 30 should be an ion gel.

[0047] In addition, the substrate 10 can be made of insulating materials such as glass substrate; the semiconductor layer 20 is made of any one of indium oxide, zinc oxide, indium gallium zinc oxide, and tungsten oxide; and the drain 31 and source 32 are made of one or more alloys of aluminum, titanium, and palladium.

[0048] 2. The TENG component is used to regulate the voltage V applied to the gate. G .

[0049] The TENG assembly includes a static friction layer 41 and a dynamic friction layer 42. The dynamic friction layer 42 is electrically connected to the source 32; the static friction layer 41 is electrically connected to the gate. The dynamic friction layer 42 is used to move under the action of an external force F to change the distance between the dynamic friction layer 42 and the static friction layer 41, and synchronously change V. G .

[0050] The static friction layer 41 and the dynamic friction layer 42 have different electron binding capabilities; it should be noted that the greater the difference in electron binding capabilities between the two, the better.

[0051] Considering the working principle of the TENG component, its connection with the transistor component can be categorized into the following situations:

[0052] 201. If the static friction layer 41 is an insulating material, a conductive layer 1 is provided on the side facing away from the dynamic friction layer 42; the conductive layer 1 is electrically connected to the source electrode 32 - the conductive layer 1 can be connected to the source electrode 32 by a wire, so that the static friction layer 41 and the source electrode 32 are electrically connected by the conductive layer 1.

[0053] If the static friction layer 41 is a conductive material, the static friction layer 41 can be directly connected to the source electrode 32 with a wire, so that the static friction layer 41 and the source electrode 32 form an electrical connection.

[0054] Of course, considering the stability of the static friction layer 41, a second substrate (which can be an insulating material such as a glass substrate) can be added to support the static friction layer 41. If the static friction layer 41 is an insulating material, the second substrate is disposed on the side of the conductive layer 1 that is away from the static friction layer 41; if the static friction layer 41 is a conductive material, the second substrate is disposed on the side of the static friction layer 41 that is away from the dynamic friction layer 42.

[0055] 202. If the dynamic friction layer 42 is an insulating material, a conductive layer 2 is provided on the side facing away from the static friction layer 41; the conductive layer 2 is electrically connected to the gate - the conductive layer 2 can be connected to the gate by a wire, thus the dynamic friction layer 42 and the gate are electrically connected by the conductive layer 2.

[0056] If the dynamic friction layer 42 is a conductive material, the dynamic friction layer 42 can be directly connected to the gate with a wire, so that the dynamic friction layer 42 and the gate are electrically connected.

[0057] Similarly, considering the stability of the dynamic friction layer 42, a third substrate 43 (which can be made of insulating materials such as glass substrates) can be added to support the dynamic friction layer 42. If the dynamic friction layer 42 is an insulating material, the third substrate 43 is disposed on the side of the conductive layer 42 facing away from the dynamic friction layer 42; if the dynamic friction layer 42 is a conductive material, the third substrate 43 is disposed on the side of the dynamic friction layer 42 facing away from the static friction layer 41.

[0058] In this embodiment 1, the TENG component is configured as follows:

[0059] like Figure 1 As shown, the static friction layer 41 is a conductive material, which can be any of copper, gold, aluminum, or silver; the dynamic friction layer 42 is an insulating material, which can be any of PTFE, PVDF, Kapton, or nylon; and the conductive layer 2 is made of any of copper, gold, aluminum, or silver.

[0060] The following example illustrates the working principle of the aforementioned TENG-based ultra-steep subthreshold swing field transistor:

[0061] In this example, substrate 10 is a glass substrate, semiconductor layer 20 is indium oxide (In2O3), gate dielectric layer 30 is ion gel, drain 31 is a copper electrode, source 32 is a copper electrode, gate is an Al electrode 33 with an Al2O3 oxide layer 34 on its surface, static friction layer 41 is a copper thin film, dynamic friction layer 42 is a PTFE thin film, and conductive layer 2 is a copper thin film.

[0062] Under the action of external force, the TENG component causes the dynamic friction layer 42 and the static friction layer 41 to come into contact or separate, thereby generating an electromotive force based on the frictional contact and separation. When the dynamic friction layer 42 moves away from the static friction layer 41, the TENG component generates a positive electromotive force and applies it to the gate, thus forming a positive voltage V. G When the dynamic friction layer 42 approaches the static friction layer 41, the TENG component generates a negative electromotive force and applies it to the gate, thus forming a negative voltage V. G .

[0063] See Figure 2 When V G When the voltage is positive, the Al2O3 oxide layer 34 captures positive charges and forms an additional capacitor layer C. TPE V G C TPE The gate dielectric layer 30 is coordinated to cause the cations and anions in the gate dielectric layer 30 to undergo localized directional movement under the polarization of the electric field, resulting in ion stratification. At this time, negative ions accumulate near the gate in the gate dielectric layer 30, and positive ions accumulate near the semiconductor layer 20. This causes the semiconductor layer 20 to accumulate negative charges, turning on the transistor assembly (i.e., an NMOS transistor). It should be noted that the gate dielectric layer 30 forms the capacitor layer C. EDL C TPE C EDL By connecting them in series with capacitive coupling, they jointly contribute to the overall effective capacitance, thereby achieving a subthreshold swing value close to the room temperature limit.

[0064] And when V G When the voltage is negative, the Al2O3 oxide layer 34 does not trap charge; only V G The gate dielectric layer 30 is acted upon, causing the anions and cations in the gate dielectric layer 30 to move locally in a directional manner. At this time, positive ions accumulate on the side near the gate and negative ions accumulate on the side near the semiconductor layer 20 in the gate dielectric layer 30. In this way, ion stratification also occurs in the gate dielectric layer 30, while positive charges accumulate in the semiconductor layer 20, causing the transistor assembly (i.e., NMOS transistor) to be turned off.

[0065] It is important to note that in V G During the process of gradually changing from a positive voltage to a negative voltage, I DS When the negative voltage threshold V is reached 负 Extremely steep mutations occur; I DS This represents the current flowing from the source 32 through the semiconductor layer 20 to the drain 31.

[0066] Specifically, this is because the Al2O3 oxide layer 34 has excellent positive charge trapping effect, allowing for positive direction scanning of V. G Time (i.e., V) G(Gradually changing from negative voltage to positive voltage) stably captures positive charges; while scanning V in the opposite direction G Time (i.e., V) G (From a positive voltage to a negative voltage), because a large number of positive charges were captured previously, V G Reaching 0 does not neutralize the charge; a negative voltage threshold V must be reached. 负 The charge is suddenly neutralized, at which point I Ds The scan variation exceeded four orders of magnitude, causing the subthreshold swing to exhibit ultra-steep characteristics.

[0067] The inventors also performed simulation verification on the TENG-based ultra-steep subthreshold swing field transistor of this example, the results of which can be found in [link to simulation]. Figures 3-6 .

[0068] like Figure 3 As shown, it illustrates the electrical transfer characteristic curves of this example: maintaining the potential difference (i.e., V) between drain 31 and source 32 during the test. D ) is 100mV, for V G Perform scanning tests in both forward and reverse directions (making V...) G The sweep speed (i.e., sweep speed) is 35mV / s when the voltage is increased from -5V to +2V and decreased from +2V to -5V.

[0069] When V G At 2V, the ion layering of the gate dielectric layer 30 and the accumulation of negative charges in the semiconductor layer 20 reach a basic saturation state.

[0070] The electrotransfer characteristic curves in this example exhibit an electrochemical relaxation window, which is related to the ion types within the ionogel. Furthermore, the subthreshold swing steepness during the reverse scan is significantly higher than that during the forward scan, demonstrating that at V... G During the process of gradually changing from a positive voltage to a negative voltage, I DS Around -4V (which can be considered as V) 负 =-4V) exhibits an extremely steep mutation.

[0071] Furthermore, the subthreshold swing of the reverse scan characteristic curve was calculated to be near the physical limit of 60 mV / dec.

[0072] like Figure 4As shown, the triboelectric transfer characteristic curve of this example is displayed: During the test, the potential difference between the drain 31 and the source 32 is kept at 100mV, and the TENG component is controlled to perform scanning tests in both forward and reverse directions (the dynamic triboelectric layer 42 is moved from a position away from the static triboelectric layer 41600μm to a position in contact with the static triboelectric layer 41, and the dynamic triboelectric layer 42 is moved from a position in contact with the static triboelectric layer 41 to a position away from the static triboelectric layer 41600μm), with a moving speed of 0.1mm / s; it can be seen that the triboelectric transfer characteristic curve exhibits a counterclockwise cyclic curve feature, indicating that the TENG component can provide a stable voltage drive to the transistor component.

[0073] Example 2

[0074] This embodiment 2 discloses the fabrication method of the ultra-steep subthreshold swing field transistor based on TENG in embodiment 1, which includes:

[0075] Step 1: Fabricate transistor components and TENG components respectively;

[0076] First, the fabrication method of transistor components:

[0077] S01, a semiconductor layer 20 is formed by sputtering semiconductor material onto one side of the substrate 10 (which may be a cleaned glass substrate) under vacuum conditions using a mask magnetron sputtering technique.

[0078] S102, a source electrode 32 and a drain electrode 31 are mounted on the side of the semiconductor layer 20 that is away from the substrate 10;

[0079] An Al electrode 33 with an Al2O3 oxide layer 34 on its surface is used as a gate electrode, and an ion gel is coated on one side of the gate electrode by screen printing to form a gate dielectric layer 30.

[0080] The source 32, drain 31, and gate are fabricated as follows: an Al electrode 33 is deposited using thermal evaporation deposition technology, and the source 32, drain 31, and gate are formed using a customized mask. The gate surface is oxidized to form an Al2O3 oxide layer 34.

[0081] The ion gel is prepared by mixing P (VDF-HFP), ionic liquid (including [EMI][TSFA]), and acetone in a mass ratio of 1:4:6, heating, and stirring until completely dissolved to obtain the ion gel.

[0082] S103, the gate is disposed on the side of the semiconductor layer 20 away from the substrate 10, and the gate dielectric layer 30 is made to contact the side of the semiconductor layer 20 away from the substrate 10, and the source 32 and drain 31 are separated, and the gate is not in contact with the drain 31 or the source 32.

[0083] Secondly, the processing methods for TENG components include:

[0084] Two materials with different electron binding capabilities are selected and processed into layers, which are respectively used as static friction layer 41 and dynamic friction layer 42; if necessary, one or more of conductive layer 1, conductive layer 2, substrate 2, and substrate 3 43 are added.

[0085] Step 2: Electrically connect the dynamic friction layer 42 to the source 32, electrically connect the static friction layer 41 to the gate, and apply an electromotive force to the source 32 and the drain 31 to form a TENG-based ultra-steep subthreshold swing field transistor.

[0086] Example 3

[0087] This embodiment 3 discloses the application of the TENG-based ultra-steep subthreshold swing field transistor of embodiment 1—using the TENG-based ultra-steep subthreshold swing field transistor of embodiment 1 as an artificial synapse; wherein, the external mechanical stimulation received by the artificial synapse is referred to as F; I DS Postsynaptic current (PSC) generated by an artificial synapse.

[0088] The application of this embodiment 3 utilizes the relaxation effect of ion migration within the gate dielectric layer 30 and the positive charge trapping effect of the gate Al2O3 oxide layer 34 to improve device sensitivity and reduce device power consumption. Ion gel can form a nanometer-thick double layer with a huge capacitance on the order of microfarads; the Al2O3 oxide layer 34 has a strong positive charge trapping capability; the synergistic effect of both can regulate the carrier state of the semiconductor layer 20 under low voltage. Therefore, the TENG component switches between separation and contact states under the action of an external force F, inducing different potential voltages—this potential voltage can act as a power source to drive the gate and can also link the spatiotemporal information generated by external mechanical stimulation with the output signal.

[0089] Therefore, by controlling the potential and voltage parameters through the TENG component, short-term or long-term synaptic plasticity can be achieved to learn and memorize rules and double-pulse facilitation rules; by utilizing the relaxation effect of ion migration, excitation and inhibition of synaptic behavior can be achieved. It has the advantages of low power consumption, high sensitivity, simple preparation method, low cost, easy implementation, safety and environmental protection.

[0090] This embodiment 3 also simulates and verifies the application of the TENG-based ultra-steep subthreshold swing field transistor of embodiment 1. See the results below. Figure 5 , Figure 6 All of these indicate that the application of the TENG-based ultra-steep subthreshold swing field transistor disclosed in Embodiment 3 is correct and reasonable.

[0091] Figure 5The PSE curve generated by external mechanical stimulation of the artificial synapse is shown: the potential difference between the drain 31 and the source 32 is kept at 100mV; in the initial state, the distance between the dynamic friction layer 42 and the static friction layer 41 is the initial value D0, the artificial synapse is not subjected to external mechanical stimulation (i.e., there is no relative displacement between the dynamic friction layer 42 and the static friction layer 41), and the PSC is a stable horizontal state (approximately 1.81 × 10⁻⁶). -4 A) When an external mechanical stimulus applies a displacement of -D to the TENG component (i.e., the dynamic friction layer 42 approaches the static friction layer 41), the TENG component generates an electromotive force and reduces the PSC to approximately 1.04 × 10⁻⁶. -4 A) not only exhibits extremely high response efficiency, but the signal change is also highly similar to the postsynaptic current of biological synapses.

[0092] Figure 6 The relationship between the double-pulse facilitation index of artificial synapses and the pulse interval is shown: it can be seen that as the interval between the two light pulse signals decreases, the current caused by the second pulse increases significantly, and the double-pulse facilitation index increases, which is consistent with the double-pulse facilitation behavior of biological synapses.

[0093] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A TENG-based ultra-steep subthreshold swing field transistor, characterized in that, include: Transistor assembly, specifically NMOS type; The transistor assembly includes: a substrate, a semiconductor layer, a gate dielectric layer, a drain, a source, and a gate; the substrate, semiconductor layer, gate dielectric layer, and gate are stacked sequentially; the drain and source are connected to the side of the semiconductor layer facing away from the substrate and are separated by the gate dielectric layer; the gate is not in contact with either the drain or the source; the drain and source have a potential difference; the gate is an Al electrode with an Al2O3 oxide layer on its surface; the gate dielectric layer is an ion gel; as well as The TENG component is used to regulate the voltage V applied to the gate. G The TENG component includes: a static friction layer and a dynamic friction layer; the dynamic friction layer is electrically connected to the source; the static friction layer is electrically connected to the gate; the static and dynamic friction layers have different electron binding capacities; the dynamic friction layer is used to move under the action of an external force F to change the distance between the dynamic and static friction layers, and simultaneously change V. G ; Among them, in V G During the process of gradually changing from a positive voltage to a negative voltage, I DS Reaching the negative voltage threshold V 负 Extremely steep mutations occur; I DS This represents the current flowing from the source through the semiconductor layer to the drain.

2. The ultra-steep subthreshold swing field transistor based on TENG according to claim 1, characterized in that: When V G When the voltage is positive, the Al2O3 oxide layer captures positive charges and forms an additional capacitor layer C. TPE V G C TPE The coordinated action on the gate dielectric layer causes ion delamination in the gate dielectric layer; At this time, negative ions accumulate on the side closer to the gate in the gate dielectric layer, and positive ions accumulate on the side closer to the semiconductor layer. The semiconductor layer accumulates negative charges, which turns on the transistor assembly.

3. The ultra-steep subthreshold swing field transistor based on TENG according to claim 1, characterized in that: When V G When the voltage is negative, the Al2O3 oxide layer does not trap charge; only V G The gate dielectric layer is subjected to an action that causes ion delamination in the gate dielectric layer; At this time, in the gate dielectric layer, positive ions accumulate on the side closer to the gate and negative ions accumulate on the side closer to the semiconductor layer. The semiconductor layer accumulates positive charges, causing the transistor assembly to turn off.

4. The ultra-steep subthreshold swing field transistor based on TENG according to claim 1, characterized in that: The static friction layer is an insulating material, and a conductive layer is provided on the side of it facing away from the dynamic friction layer; the conductive layer is electrically connected to the source electrode. Alternatively, the static friction layer may be made of a conductive material.

5. The ultra-steep subthreshold swing field transistor based on TENG according to claim 4, characterized in that: The TENG component further includes: a second substrate; the second substrate is used to support the static friction layer; If the static friction layer is an insulating material, the second substrate is disposed on the side of the first conductive layer that is away from the static friction layer. If the static friction layer is a conductive material, the second substrate is disposed on the side of the static friction layer that is opposite to the dynamic friction layer.

6. The ultra-steep subthreshold swing field transistor based on TENG according to claim 1, characterized in that: The dynamic friction layer is an insulating material, and a second conductive layer is provided on the side of it facing away from the static friction layer; the second conductive layer is electrically connected to the gate. Alternatively, the dynamic friction layer may be made of a conductive material.

7. The ultra-steep subthreshold swing field transistor based on TENG according to claim 6, characterized in that: The TENG component further includes: a third substrate; the third substrate is used to support the dynamic friction layer; If the dynamic friction layer is an insulating material, the substrate three is disposed on the side of the conductive layer two that is away from the dynamic friction layer; If the dynamic friction layer is a conductive material, the substrate three is disposed on the side of the dynamic friction layer that is opposite to the static friction layer.

8. The ultra-steep subthreshold swing field transistor based on TENG according to claim 1, characterized in that: The semiconductor layer is made of any one of indium oxide, zinc oxide, indium gallium zinc oxide, or tungsten oxide; Or / and, the materials of the drain and source electrodes are one or more alloys of aluminum, titanium, and palladium; Or / and, the material of the static friction layer is any one of copper, gold, aluminum, or silver; the material of the dynamic friction layer is any one of PTFE, PVDF, Kapton, or nylon.

9. The fabrication method of the ultra-steep subthreshold swing field transistor based on TENG as described in any one of claims 1-8, characterized in that, It includes: Step 1: Fabricate transistor components and TENG components respectively; The processing method for transistor components includes: Semiconductor material is sputtered onto one side of substrate one under vacuum conditions using a mask magnetron sputtering technique to form a semiconductor layer; The source and drain electrodes are mounted on the side of the semiconductor layer that faces away from the substrate. An Al electrode with an Al2O3 oxide layer on its surface is used as a gate, and an ion gel is coated on one side of the gate by screen printing to form a gate dielectric layer. The gate is disposed on the side of the semiconductor layer away from the substrate, and the gate dielectric layer is made to contact the side of the semiconductor layer away from the substrate, while the source and drain are separated, and the gate is not in contact with either the drain or the source. Step 2: Electrically connect the dynamic friction layer to the source and the static friction layer to the gate, and apply an electromotive force to the source and drain to form an ultra-steep subthreshold swing field transistor based on TENG.

10. Application of TENG-based ultra-steep subthreshold swing field transistors, characterized in that, Using the TENG-based ultra-steep subthreshold swing field transistor as described in any one of claims 1-8 as an artificial synapse; Among them, the external mechanical stimulation received by the artificial synapse is referred to as F; I DS Postsynaptic current (PSC) generated by an artificial synapse.

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