Photoresist stripper composition and method for forming pattern

Abstract

The present disclosure relates to a photoresist stripper composition and a method for forming a pattern. The photoresist stripper composition according to one or more embodiments includes an amine compound, a cyclic alcohol, a protic polar organic solvent, an aprotic polar organic solvent, and a polyol having from 4 to 6 carbon atoms. The amine compound in the photoresist stripper composition may have a molecular weight of about 80 g / mol or less and a HSPo value according to Equation 1 of about 27 to about 32. The photoresist stripper composition according to one or more embodiments can be used in a process of removing a photoresist pattern formed on a lower film, and can provide a photoresist with excellent or appropriate stripping ability and a property of preventing or reducing damage of the lower film.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0107834, filed on August 17, 2023, which is incorporated herein by reference in its entirety. Technical Field

[0003] One or more aspects of the embodiments disclosed herein relate to a photoresist stripper composition and a method of forming (or providing) a pattern using the photoresist stripper composition, and, for example, relate to a photoresist stripper composition for removing photoresist and a method of forming (or providing) a pattern using the photoresist stripper composition. Background Art

[0004] The photolithography process using the photoresist can be performed in the semiconductor manufacturing process and the panel process of the display device. For example, a photoresist pattern can be formed by forming (or providing) a photoresist layer on a substrate and exposing and developing the photoresist layer.

[0005] In the photolithography process, a photoresist stripper composition is used to remove the photoresist pattern. However, in the related art, the photoresist stripper composition partially includes environmentally regulated materials (e.g., materials that may be considered dangerous and / or toxic, and / or materials that may be considered contaminants and / or pollutants). Therefore, it is necessary (or desirable) to develop a technology for a photoresist stripper composition that does not contain any environmentally regulated materials and has excellent or suitable photoresist pattern removal properties. Summary of the invention

[0006] One or more aspects of the disclosed embodiments are directed to a photoresist stripper composition capable of improving stripping ability (eg, stripping ability) and / or dissolution performance of a photoresist pattern while minimizing or reducing corrosion of a film beneath the photoresist pattern.

[0007] One or more aspects of the embodiments of the present disclosure are also directed to a method of forming (or providing) a pattern using the above-mentioned photoresist stripper composition.

[0008] One or more embodiments of the present disclosure provide a photoresist stripper composition, comprising: approximately 5% to approximately 15% by weight of an amine compound having a molecular weight of approximately 80 g / mol or less and a Hansen solubility parameter (HSPo) of approximately 27 to approximately 32 according to Equation 1, relative to the total weight of the photoresist stripper composition; approximately 5% to approximately 15% by weight of a cyclic alcohol; approximately 10% to approximately 55% by weight of a protic polar organic solvent; approximately 10% to approximately 55% by weight of a non-protic polar organic solvent; and approximately 0.05% to approximately 1% by weight of a polyol having 4 to 6 carbon atoms.

[0009] Equation 1

[0010] HSPo=(HSPd 2 +HSPp 2 +HSPh 2 ) 0.5 ,

[0011] Wherein, in Equation 1, HSPd is the solubility parameter resulting from non-polar dispersed bonds, HSPp is the solubility parameter resulting from polar bonds induced (eg, promoted) by permanent dipoles, and HSPh is the solubility parameter resulting from hydrogen bonds.

[0012] In one or more embodiments, the amine compound may be an alkanolamine compound.

[0013] In one or more embodiments, the amine compound may include at least one of monoisopropanolamine, 3-amino-1-propanol, monoethanolamine, and 2-methylaminoethanol.

[0014] In one or more embodiments, the amine compound may be a primary amine compound.

[0015] In one or more embodiments, the cyclic alcohol may have 4 to 6 carbon atoms in the molecule.

[0016] In one or more embodiments, the cyclic alcohol may include at least one of tetrahydrofurfuryl alcohol, furfuryl alcohol, cyclobutanol, cyclopentanol, cyclohexanol, and isopropyl glycerol.

[0017] In one or more embodiments, the protic polar organic solvent may include an ethylene glycol-based compound represented by Formula 1 or Formula 2, which is described in more detail below.

[0018] In one or more embodiments, the protic polar organic solvent may include at least one of ethylene glycol, propylene glycol, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, triethylene glycol monopropyl ether, triethylene glycol monobutyl ether, triethylene glycol monomethyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monopropyl ether and tripropylene glycol monobutyl ether.

[0019] In one or more embodiments, the photoresist stripper composition may not include (eg, may exclude) N-methyl-2-pyrrolidone and / or N-methylformamide.

[0020] In one or more embodiments, the aprotic polar organic solvent may include at least one of 2-pyrrolidone, 4-formylmorpholine, N,N-dimethylpropionamide, 1,3-dimethyl-2-imidazolidinone, N,N-dimethylacetoacetamide, cyclopentane, N-ethylformamide and equamide (3-methoxy-N,N-dimethylpropionamide).

[0021] In one or more embodiments, the polyol may be a linear alkyl alcohol.

[0022] In one or more embodiments, the polyol may include at least one of erythritol, threitol, arabitol, xylitol, ribitol, mannitol, sorbitol, galactitol, fucitol, and iditol.

[0023] In one or more embodiments, the photoresist stripper composition may not include (eg, may exclude) water.

[0024] In one or more embodiments, the photoresist stripper composition may have a specific gravity of about 1.01 or more.

[0025] In one or more embodiments of the present disclosure, a method for forming (or providing) a pattern includes forming (or providing) a photoresist pattern on a substrate having a lower film formed thereon, forming (or providing) a wiring pattern using (e.g., utilizing) the photoresist pattern, and removing the photoresist pattern by (e.g., by supplying) the photoresist stripper composition. The photoresist stripper composition according to an embodiment can be used as the photoresist stripper composition for removing the photoresist pattern.

[0026] In one or more embodiments, the lower film may include: a metal film selected from aluminum (Al), copper (Cu), and alloys thereof; a metal oxide film such as a silicon oxide film and / or a silicon nitride film; and / or any suitable combination thereof.

[0027] In one or more embodiments, the lower film may be a single-layer film or a multi-layer film. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The accompanying drawings are included to provide a further understanding of the present disclosure and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure. In the drawings:

[0029] Figure 1 is a flow chart schematically illustrating a method for forming (or providing) a pattern according to one or more embodiments;

[0030] Figures 2 to 6 Each is a cross-sectional view schematically illustrating a method for forming (or providing) a pattern according to one or more embodiments; and

[0031] Figure 7 Scanning electron micrographs of lower films of photoresist stripper compositions according to some Examples and some Comparative Examples, respectively, are shown. DETAILED DESCRIPTION

[0032] In the present disclosure, one or more suitable modifications may be made, and one or more suitable forms may be applied, and example embodiments will be illustrated in the drawings and described in more detail in the text. However, this is not intended to limit the present disclosure to a specific disclosure form, but rather, it should be understood to include all changes, equivalents, and substitutes within the spirit and scope of the present disclosure.

[0033] When describing each of the accompanying drawings, similar reference numerals are used for similar elements. In the accompanying drawings, for the sake of clarity of the present disclosure, the size of the structure is shown as enlarged (e.g., larger than the actual). Terms such as first and second can be used to describe one or more appropriate components, but the components should not be limited by these terms. These terms are only used to distinguish one component from another component. For example, without departing from the scope of the present disclosure, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component. Unless the context clearly indicates otherwise, a singular expression includes a plural expression.

[0034] In the present application, terms such as "include" and / or "have" are intended to indicate the presence of features, numbers, steps, actions, components, parts or combinations thereof described in the specification. It should be understood that the possibility of the presence or addition of one or more other features or numbers, steps, actions, components, parts or combinations thereof is not precluded.

[0035] In the present application, if (for example, when) a component such as a layer, film, region, and / or plate is said to be "on" or "above" another component, it includes not only "directly on" another component or "directly above" the other component (for example, without any intervening component between them), but also includes one or more other components being located in the middle (for example, in the middle of them). Conversely, if (for example, when) a component such as a layer, film, region, and / or plate is said to be "below" or "beneath" another component, this includes not only the case where the other component is "directly below" or "directly below" (for example, without any intervening component between them), but also includes the case where one or more other components are present in the middle (for example, in the middle of them). In one or more embodiments, in the present application, the term "above" may include the case where an element is arranged not only at the top but also at the bottom.

[0036] As used herein, expressions such as "at least one of", "one of", and "selected from" when preceding or following a list of elements modify the entire list of elements, rather than the individual elements in the list. For example, "select at least one of a, b, and c" and "at least one of a, b, and c" may mean only a, only b, only c, both a and b (e.g., a and b simultaneously), both a and c (e.g., a and c simultaneously), both b and c (e.g., b and c simultaneously), all of a, b, and c, or variations thereof.

[0037] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0038] Additionally, the use of “may” when describing embodiments of the present disclosure refers to “one or more embodiments of the present disclosure.”

[0039] As used herein, the terms "substantially," "approximately," and similar terms are used as approximate terms rather than terms of degree, and are intended to account for the inherent deviations in measured or calculated values ​​recognized by those of ordinary skill in the art. As used herein, "approximately" or "approximately" includes the stated value and means within an acceptable range of deviation for the particular value as determined by those of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "approximately" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0040] Any numerical range described herein is intended to include all subranges with the same numerical precision contained in the range. For example, the range of "1.0 to 10.0" is intended to include (and include) all subranges between the minimum value 1.0 and the maximum value 10.0, i.e., having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limit described herein is intended to include all lower numerical limits contained therein, and any minimum numerical limit described in this specification is intended to include all higher numerical limits contained therein. Therefore, the applicant reserves the right to modify this specification (including claims) to explicitly list any subranges contained in the range explicitly described herein.

[0041] In the present disclosure and unless otherwise defined, "not including one or any 'ingredient'", "excluding one or any 'ingredient'" and / or "not containing an 'ingredient'" and the like means that the "ingredient" is not added, selected or utilized as an ingredient in the formula / composition / structure, but due to other impurities and / or external factors, the "ingredient" may still be included in less than an appropriate amount.

[0042] Hereinafter, a photoresist stripper composition according to one or more embodiments of the present disclosure will be described.

[0043] The photoresist stripper composition according to one or more embodiments can be used to strip (e.g., dissolve) a photoresist pattern formed on a lower film. The photoresist stripper composition according to one or more embodiments can be used to strip a photoresist pattern formed on a metal film and / or a metal oxide film. In one or more embodiments, the photoresist stripper composition according to one or more embodiments can be used to strip a photoresist pattern formed on a lower film, and the lower film can be a combination of a metal film and a metal oxide film. The lower film below the photoresist pattern can include a metal film, a metal oxide film, and / or any suitable combination thereof, and can be a single-layer film or a multilayer film.

[0044] The photoresist stripper composition according to one or more embodiments of the present disclosure may include an amine compound, a cyclic alcohol, a protic polar organic solvent, an aprotic polar organic solvent, and a polyol.

[0045] The amine compound included in the photoresist stripper composition according to one or more embodiments can be used to weaken the bonding force of the photoresist pattern. For example, the amine compound can destroy and / or cut the molecular bonds in the cured photoresist resin. Therefore, the photoresist stripper composition including the amine compound can show the characteristics of promoting the removal of the photoresist pattern.

[0046] In one or more embodiments, the amine compound may have a relatively small molecular weight, thereby increasing the stripping rate of the photoresist pattern, and may have a Hansen solubility parameter value of about 27 to about 32. The molecular weight may be a weight average molecular weight. The amine compound has a relatively low molecular weight and a Hansen solubility parameter value within the above range, and thus may increase the dissolution ability and stripping rate of the photoresist pattern.

[0047] For example, the amine compound may have a molecular weight of about 80 g / mol or less. In one or more embodiments, the amine compound may have a molecular weight of about 30 g / mol to about 80 g / mol. When the molecular weight of the amine compound included in the photoresist stripper composition according to one or more embodiments is about 80 g / mol or less, the stripping rate can be increased. The molecular weight of the amine compound included in the photoresist stripper composition according to one or more embodiments is about 80 g / mol or less, and within the molecular weight range according to the embodiment, the smaller the molecular weight, the shorter the stripping time of the photoresist pattern.

[0048] In one or more embodiments, the amine compound may have a Hansen solubility parameter according to Equation 1 of about 27 to about 32. The amine compound having a Hansen solubility parameter according to Equation 1 satisfying the above range may improve the dissolution ability of the photoresist pattern. Therefore, the photoresist stripper composition including the amine compound according to one or more embodiments may improve the stripping rate.

[0049] Equation 1

[0050] HSPo=(HSPd 2 +HSPp 2 +HSPh 2 ) 0.5

[0051] In Equation 1, HSPd may be a solubility parameter resulting from nonpolar dispersed bonding. HSPp may be a solubility parameter resulting from polar bonding caused by permanent dipoles. HSPh may be a solubility parameter resulting from hydrogen bonding.

[0052] In one or more embodiments, if (eg, when) the Hansen Solubility Parameter (HSPo) according to Equation 1 is about 27 to about 32, and higher values ​​within this range, the amine compound may increase the stripping rate.

[0053] According to one or more embodiments, the amine compound may include at least one hydroxyl group. For example, the amine compound may be an alkanolamine compound including a hydroxyl group. In the alkanolamine compound, the hydroxyl group may be located at one end (e.g., at the end) and / or on a side chain of the amine compound. The alkanolamine compound may have a molecular weight of about 80 g / mol or less and an HSPo according to equation 1 of about 27 to about 32.

[0054] The type or kind of the amine compound may not be particularly limited as long as the amine compound appropriately satisfies the above molecular weight range and the range of the Hansen solubility parameter value according to Equation 1. For example, the amine compound may include at least one of monoisopropanolamine, 3-amino-1-propanol, monoethanolamine, and 2-methylaminoethanol. These may be used alone or in combination of two or more.

[0055] The amine compound included in the photoresist stripper composition according to one or more embodiments may be a primary amine compound. For example, the photoresist stripper composition may include at least one of monoisopropanolamine, 3-amino-1-propanol, and monoethanolamine, but one or more embodiments of the present disclosure are not limited thereto.

[0056] In one or more embodiments, the amine compound may have a content (e.g., amount) of about 5% to about 15% by weight relative to the total weight of the photoresist stripper composition. When the amine compound has a content (e.g., amount) of less than about 5% by weight, it may be difficult to fully or properly reflect the stripping performance of the photoresist stripper composition (e.g., it may be difficult to fully or properly dissolve the photoresist stripper composition). In one or more embodiments, when the amine compound has a content (e.g., amount) of more than about 15% by weight, the lower film under the photoresist pattern may be damaged.

[0057] The photoresist stripper composition according to one or more embodiments of the present disclosure may include a cyclic alcohol. The cyclic alcohol may be used to properly maintain the performance of the photoresist stripper composition for a longer time by reducing the volatilization amount of the photoresist stripper composition and controlling the evaporation of an amine compound (such as an alkanolamine).

[0058] In one or more embodiments, the cyclic alcohol may have 4 to 6 carbon atoms in the molecule. Cyclic alcohol may include hydrocarbon rings and / or heterocycles having 4 to 6 carbon atoms in the molecule. Hydrocarbon rings and heterocycles may each independently be monocyclic or polycyclic. Hydrocarbon rings include aliphatic hydrocarbon rings and / or aromatic hydrocarbon rings. Heterocycles include aliphatic heterocycles and / or aromatic heterocycles. Heterocycles may include at least one heteroatom, such as an oxygen atom. When the heterocycle includes two or more heteroatoms, the two or more heteroatoms may be identical or different from each other. For example, cyclic alcohol may include a heterocycle containing one or two oxygen atoms as heteroatoms.

[0059] In one or more embodiments, the cyclic alcohol may have an aliphatic hydrocarbon ring and / or an aromatic hydrocarbon ring having 4 to 6 carbon atoms in the molecule and / or a heterocycle containing at least one heteroatom as a ring-forming atom. In one or more embodiments, the cyclic alcohol may include a hydroxyl group. For example, the cyclic alcohol may be a monohydric alcohol containing a hydroxyl group.

[0060] For example, the cyclic alcohol may include at least one selected from among tetrahydrofurfuryl alcohol, furfuryl alcohol, cyclobutanol, cyclopentanol, cyclohexanol, and isopropyl glycerol, but one or more embodiments of the present disclosure are not limited thereto.

[0061] In one or more embodiments, the cyclic alcohol may have a content (e.g., may be in amount) of about 5% to about 15% by weight relative to the total weight of the photoresist stripper composition. When the cyclic alcohol has a content (e.g., amount) of less than about 5% by weight, it may be difficult to properly control the evaporation of the amine compound, and thus the stripping performance of the photoresist stripper composition may not be fully or properly reflected. In one or more embodiments, if (e.g., when) the cyclic alcohol has a content (e.g., amount) of more than about 15% by weight, the lower film under the photoresist pattern may be damaged.

[0062] The photoresist stripper composition according to one or more embodiments of the present disclosure may include a protonic polar organic solvent. The protonic polar organic solvent may play an auxiliary role in stripping the photoresist pattern and may disperse the dissolved photoresist material in the photoresist stripper composition.

[0063] The protic polar organic solvent may include an ethylene glycol-based compound. The protic polar organic solvent may include one or two types (species) of ethylene glycol-based compounds. The ethylene glycol-based compound may disperse the dissolved photoresist in the photoresist stripper composition to help quickly or appropriately remove the photoresist.

[0064] In this specification, "substituted or unsubstituted" materials may refer to materials that are unsubstituted or substituted by one or more substituents selected from the group consisting of deuterium atoms, halogen atoms, cyano groups, nitro groups, amino groups, silyl groups, hydroxyl groups, oxo groups, sulfenyl groups, sulfonyl groups, carbonyl groups, boron groups, phosphine oxide groups, phosphine sulfide groups, alkyl groups, alkenyl groups, alkynyl groups, hydrocarbon ring groups, aryl groups, heterocyclic groups, and any suitable combination thereof. In one or more embodiments, the substituents exemplified above may themselves be substituted or unsubstituted. For example, biphenyl groups may be understood as aryl groups, or phenyl groups substituted by phenyl groups.

[0065] In the present specification, the alkyl group may be linear or branched.The alkyl group may have 1 to 50, 1 to 30, 1 to 20, 1 to 10, or 1 to 6 carbon atoms. Examples of the alkyl group may include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, and n-undecane. In some embodiments, the present invention may be selected from the group consisting of alkyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, n-heonicosyl, n-docosyl, n-tricosyl, n-tetracosyl, n-pentacosyl, n-hexacosyl, n-heptacosyl, n-octacosyl, n-nonacosyl and / or n-triacontyl, etc., but the present disclosure is not limited thereto.

[0066] In this specification, cycloalkyl can refer to a ring type or type (e.g., cyclic) alkyl. Cycloalkyl can have 3 to 50, 3 to 30, 3 to 20, or 3 to 10 carbon atoms. Examples of cycloalkyl can be cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, 4-methylcyclohexyl, 4-tert-butylcyclohexyl, cycloheptyl, cyclooctyl, cyclononyl, cyclodecyl, norbornyl, 1-adamantyl, 2-adamantyl, isobornyl and / or bicycloheptyl, but the disclosure is not limited thereto.

[0067] In this specification, alkenyl refers to a hydrocarbon group containing at least one carbon-carbon double bond in the middle and / or at one end of an alkyl group having two or more carbon atoms. The alkenyl group may be linear or branched. The number of carbon atoms of the alkenyl group is not particularly limited, but may be 2 to 30, 2 to 20, or 2 to 10. Examples of alkenyl groups may be vinyl, 1-butenyl, 1-pentenyl, 1,3-butadienyl, styryl and / or styrylvinyl, etc., but the present disclosure is not limited thereto.

[0068] In this specification, alkynyl refers to a hydrocarbon group containing at least one carbon-carbon triple bond in the middle and / or at one end of an alkyl group having two or more carbon atoms. The alkynyl group may be straight-chain or branched. The number of carbon atoms of the alkynyl group is not particularly limited, but may be 2 to 30, 2 to 20, or 2 to 10. Examples of the alkynyl group may be ethynyl and / or propynyl, etc., but the present disclosure is not limited thereto.

[0069] In the present specification, the hydrocarbon ring group refers to a functional group (eg, any functional group) and / or a substituent group derived from an aliphatic hydrocarbon ring. The hydrocarbon ring group may be a saturated hydrocarbon ring group having 3 to 20 or 3 to 15 ring-forming carbon atoms.

[0070] In this specification, aryl refers to a functional group (e.g., any functional group) and / or a substituent derived from an aromatic hydrocarbon ring. Aryl can be a monocyclic aryl or a polycyclic aryl. Aryl can have 6 to 30, 6 to 20, or 6 to 15 ring-forming carbon atoms. Examples of aryl can be phenyl, naphthyl, fluorenyl, anthracenyl, phenanthrenyl, biphenyl, terphenyl, quaterphenyl, pentaphenyl, hexaphenyl, triphenyl, pyrenyl, benzofluoranthenyl and / or Base, etc., but the present disclosure is not limited thereto.

[0071] In the present specification, the alkoxy group may be linear or branched. The number of carbon atoms of the alkoxy group is not particularly limited, but may be, for example, 1 to 20 or 1 to 10. Examples of the alkoxy group may be a methoxy group, an ethoxy group, a n-propoxy group, an isopropoxy group, a butoxy group, a pentyloxy group, a hexyloxy group, an octyloxy group, a nonyloxy group, a decyloxy group, and / or a benzyloxy group, but the present disclosure is not limited thereto.

[0072] In one or more embodiments, the ethylene glycol-based compound may be represented by Formula 1 or Formula 2.

[0073] Formula 1

[0074]

[0075] In formula 1, R 1It may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 15 ring carbon atoms, or a substituted or unsubstituted aryl group having 3 to 15 ring carbon atoms. 1 It may be a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms. 1 It may be a hydrogen atom, an unsubstituted methyl group, an unsubstituted ethyl group, an unsubstituted propyl group and / or an unsubstituted butyl group, etc.

[0076] In Formula 1, n may be an integer of 1 or more. For example, n may be an integer of 1 to 10, but one or more embodiments of the present disclosure are not limited thereto.

[0077] Formula 2

[0078]

[0079] In formula 2, R 2 It may be a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms. 2 It may be a hydrogen atom or an unsubstituted methyl group, but the present disclosure is not limited thereto.

[0080] In formula 2, R 3 It may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms. 3 It can be a hydrogen atom, a substituted or unsubstituted methyl group, a substituted or unsubstituted ethyl group, a substituted or unsubstituted propyl group, a substituted or unsubstituted butyl group and / or a substituted or unsubstituted ethoxy group, etc. In one or more embodiments, if (for example, when) R 3 When substituted by another substituent, R 3 It may be substituted with a hydroxyl group and / or an alkoxy group, etc., but one or more embodiments of the present disclosure are not limited thereto.

[0081] For example, the proton polar organic solvent may include at least one of ethylene glycol, propylene glycol, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, triethylene glycol monopropyl ether, triethylene glycol monobutyl ether, triethylene glycol monomethyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monopropyl ether and tripropylene glycol monobutyl ether. The above examples may be used alone or in combination of two or more thereof. The photoresist stripper composition according to one or more embodiments may include diethylene glycol monoethyl ether as a proton polar organic solvent, but one or more embodiments of the present disclosure are not limited thereto.

[0082] In one or more embodiments, the proton polar organic solvent may have a content (e.g., amount) of about 10% to about 55% by weight relative to the total weight of the photoresist stripper composition. In one or more embodiments, the proton polar organic solvent may have a content (e.g., may be included in the above amounts) of about 30% to about 55% by weight or about 30% to about 50% by weight. When the proton polar organic solvent is included in the above content (e.g., amount) range in the photoresist stripper composition, the photoresist stripper composition may ensure sufficient or appropriate swelling and / or dissolving ability for the photoresist pattern. In one or more embodiments, if (e.g., when) the content (e.g., amount) of the proton polar organic solvent is less than about 10% by weight, the photoresist stripper composition may not have sufficient or appropriate dissolving ability for the photoresist pattern. In one or more embodiments, if (e.g., when) the content (e.g., amount) of the protic polar organic solvent is greater than about 55% by weight, the stripping performance of the photoresist stripper composition may deteriorate and the cost for manufacturing the photoresist stripper composition may increase.

[0083] The photoresist stripper composition according to one or more embodiments may include a non-protonic polar organic solvent. The non-protonic polar organic solvent may weaken or reduce the bonding force of the polymer material in the photoresist to facilitate the removal of the photoresist pattern modified by curing. Therefore, the non-protonic polar organic solvent may be used to maximize or improve the excellent or suitable stripping ability and excellent or suitable cleaning ability of the photoresist stripper composition according to one or more embodiments.

[0084] The aprotic polar organic solvent is not particularly limited, and any suitable aprotic polar organic solvent can be used, as long as it can properly exclude harmful materials and has a suitable solubility for the photoresist pattern. For example, the aprotic polar organic solvent may not include (e.g., may exclude) N-methyl-2-pyrrolidone and / or N-methylformamide that are harmful to the environment and the human body. For example, the photoresist stripper composition according to one or more embodiments can improve the solubility performance of the photoresist pattern without using N-methyl-2-pyrrolidone and / or N-methylformamide that are harmful materials.

[0085] For example, the aprotic polar organic solvent may include at least one of 2-pyrrolidone, 4-formylmorpholine, N,N-dimethylpropionamide, 1,3-dimethyl-2-imidazolidinone, N,N-dimethylacetoacetamide, sulfolane, N-ethylformamide and equamide. These may be used alone or in combination of at least two of them. The photoresist stripper composition according to one or more embodiments may include N,N-dimethylpropionamide as the aprotic polar organic solvent, but one or more embodiments of the present disclosure are not limited thereto.

[0086] In one or more embodiments, the aprotic polar organic solvent may have a content (e.g., amount) of about 10% to about 55% by weight relative to the total weight of the photoresist stripper composition. In one or more embodiments, the aprotic polar organic solvent may have a content (e.g., amount) of about 30% to about 55% or about 30% to about 50% by weight. When the aprotic polar organic solvent is included in the above-mentioned content (e.g., amount) range in the photoresist stripper composition, excellent or suitable stripping ability for the cured and / or modified photoresist can be obtained, and the solubility ability for the stripped photoresist can be maximized or improved. In one or more embodiments, if (e.g., when) the content (e.g., amount) of the aprotic polar organic solvent is less than about 10% by weight, the removal ability of the modified photoresist may be inappropriate or insufficient. In one or more embodiments, if (e.g., when) the content (e.g., amount) of the aprotic polar organic solvent is greater than about 55% by weight, the stripping performance of the photoresist stripper composition may deteriorate and the cost for manufacturing the photoresist stripper composition may increase.

[0087] The photoresist stripper composition according to one or more embodiments may include a polyol. The polyol may improve the cleaning performance of the photoresist stripper composition, and may help inhibit or reduce corrosion of a film made of a metal such as aluminum during a rinse process, and prevent or reduce damage to a metal oxide film.

[0088] A photoresist stripper composition comprising a polyol having 3 or less carbon atoms may have an explosion risk under special or specific conditions. Therefore, according to one or more embodiments, the polyol may have 4 or more carbon atoms in the molecule. For example, the polyol may have 4 to 6 carbon atoms in the molecule. The polyol may be a straight-chain alkyl alcohol having 4 to 6 carbon atoms. The term "straight-chain alkyl" used in the present disclosure refers to a straight or branched alkyl. For example, a straight-chain alkyl alcohol may be composed in a manner in which at least three hydroxyl groups are connected to a straight-chain alkyl having 4 to 6 carbon atoms. The straight-chain alkyl alcohol having 4 to 6 carbon atoms includes a racemic mixture and / or its stereoisomers, etc.

[0089] For example, the polyol may include at least one of erythritol, threitol, arabitol, xylitol, ribitol, mannitol, sorbitol, galactitol, fucitol, and iditol. The surface area of ​​the above-mentioned polyol increases with the increase of the grade of the alcohol in the rinsing process, so that the intermolecular attraction thereof increases. Therefore, the photoresist stripper composition including the polyol according to one or more embodiments may exhibit improved cleaning performance. In one or more embodiments, the photoresist stripper composition according to one or more embodiments may include the polyol, and thus may be used in the rinsing process with Al 2 O 3 Stabilizes aluminum surfaces, thereby providing more effective or appropriate corrosion protection.

[0090] In one or more embodiments, the polyol may have a content (e.g., amount) of about 0.05% to about 1% by weight relative to the total weight of the photoresist stripper composition. When the polyol is included in the above-mentioned content (e.g., amount) range in the photoresist stripper composition, the photoresist pattern can be stripped without causing any (or substantially no) surface damage to the lower film under the photoresist. When the content (e.g., amount) of the polyol is less than about 0.05% by weight, the cleaning performance and / or anti-corrosion performance of the photoresist stripper composition may deteriorate. In one or more embodiments, if (e.g., when) the content (e.g., amount) of the polyol is greater than about 1% by weight, insolubility may occur, and therefore the photoresist stripper composition itself may remain, and it may be difficult to completely clean the residues from the photoresist.

[0091] The photoresist stripper composition according to one or more embodiments of the present disclosure may not include (e.g., may exclude) water. For example, the photoresist stripper composition according to one or more embodiments may be an anhydrous photoresist stripper composition. Water may include deionized water (ultrapure water).

[0092] In the process of manufacturing electronic devices, for example, in the process of removing the photoresist pattern in the process of manufacturing electronic devices, the photoresist stripper composition according to one or more embodiments can be used. As an example, the photoresist stripper composition according to one or more embodiments can be used in the process of manufacturing an array substrate in the process of manufacturing a display device and in the process of removing the photoresist pattern formed on the metal film and / or the metal oxide film.

[0093] In one or more embodiments, the photoresist pattern can be removed by (e.g., via) a suitable stripper using a photoresist stripper composition. Polyvinyl butyral can be used as a glass binder in a stripper. When exposed to a photoresist stripper composition for a long time, such polyvinyl butyral may dissolve and may fall on a substrate formed with a lower film during a manufacturing process. In this case, when the polyvinyl butyral has a greater specific gravity than the photoresist stripper composition, the polyvinyl butyral may be adsorbed on the substrate to generate a foreign body (e.g., a foreign body film).

[0094] In order to prevent or reduce the generation of polyvinyl butyral as a foreign matter, the photoresist stripper composition according to one or more embodiments of the present disclosure may have a greater specific gravity than polyvinyl butyral. For example, the photoresist stripper composition according to one or more embodiments may include the above-mentioned proton polar organic solvent and aproton polar organic solvent, and therefore may have a greater specific gravity than polyvinyl butyral. For example, since the specific gravity of polyvinyl butyral is about 1.00, the photoresist stripper composition according to one or more embodiments may have a specific gravity of about 1.01 or greater. Therefore, the photoresist stripper composition according to one or more embodiments can prevent or reduce the adsorption of polyvinyl butyral on a substrate formed with a lower film during the manufacturing process, and therefore can reduce the risk of product failure caused by foreign matter.

[0095] Hereinafter, a method for manufacturing an array substrate according to one or more embodiments of the present disclosure will be described with reference to the accompanying drawings. The method for manufacturing an array substrate may utilize the photoresist stripper composition according to one or more embodiments described above.

[0096] Figure 1 is a flow chart schematically illustrating a method for forming (or providing) a pattern according to one or more embodiments. Figures 2 to 6 Each is a cross-sectional view schematically illustrating a method for forming (or providing) a pattern according to one or more embodiments. Figures 2 to 6The configurations illustrated in the drawings are illustrated exaggerated and may have dimensions different from their actual dimensions. Here, unless otherwise defined, a listing of operations, steps, tasks, or actions in a particular order does not necessarily mean that the invention or claims require that particular order. That is, as a general rule, unless an operation, step, activity, or action of a method (e.g., a method claim) actually describes an order, the operations, steps, activities, or actions should not be interpreted as requiring an order.

[0097] Reference Figure 1 According to one or more embodiments, the method for forming (or providing) a pattern may include an operation (or action) of forming (or providing) a photoresist pattern on a lower film (S100), an operation (or action) of forming (or providing) a wiring pattern from the lower film (S200), and an operation (or action) of removing the photoresist pattern by supplying a photoresist stripper composition (S300).

[0098] Reference Figure 1 and Figure 2 , the lower film BL may be formed on the substrate BS, and the photoresist film P-PR may be formed on the lower film BL. The substrate BS may be a member providing a substrate surface on which the lower film BL is arranged. The substrate BS may be a glass substrate, a metal substrate, and / or a plastic substrate, etc. However, one or more embodiments of the present disclosure are not limited thereto, and the substrate BS may be an inorganic layer, an organic layer, or a composite material layer (e.g., including an organic material and an inorganic material). In one or more embodiments, the substrate BS may include a semiconductor substrate such as a silicon wafer.

[0099] The lower film BL may include a metal film, a metal oxide film, and / or any suitable combination thereof. For example, the metal film may include a metal such as aluminum (Al), copper (Cu), or an alloy thereof. The metal oxide film may be, for example, a silicon oxide film and / or a silicon nitride film, etc., but one or more embodiments of the present disclosure are not limited thereto.

[0100] The photoresist film P-PR can be formed by applying and drying a photoresist composition on the lower film BL. In the embodiment, a method in which the exposed portion EP (see Figure 3 ) is applied to the lower film BL, but one or more embodiments of the present disclosure are not limited thereto. In some embodiments, a negative photoresist composition in which a polymer is derived (e.g., cured) in the exposed portion EP (see Figure 3 ) in which a polymer softening occurs to form (or provide) a photoresist film P-PR.

[0101] Reference Figure 3, an exposure process may be performed on the photoresist film P-PR using the mask MK. The mask MK may be arranged to be spaced apart from the substrate BS on which the photoresist film P-PR is formed. The mask MK may include a transmission area MK1 and a blocking area MK2 to selectively transmit light (e.g., ultraviolet (UV) light) incident from the top of the mask MK. Thus, for example, an exposure portion EP of the photoresist film P-PR overlapping with the transmission area MK1 of the mask MK may be exposed to light for crosslinking / curing. In one or more embodiments, a non-exposure portion NEP of the photoresist film P-PR overlapping with the blocking area MK2 may not be cured.

[0102] Reference Figure 3 and Figure 4 , the non-exposed portion NEP of the photoresist film P-PR may be removed by a developer. For example, the non-exposed portion NEP of the photoresist film P-PR that is not exposed to light due to the blocking area MK2 of the mask MK may be completely removed by a developer, so that the surface of the lower film BL may be exposed. In one or more embodiments, the photoresist film P-PR of the exposed portion EP may remain on the lower film BL to form (or provide) a photoresist pattern PR.

[0103] In one or more embodiments, the photoresist pattern PR may be used as an etching mask for patterning the lower film BL. For example, an etchant may be supplied on the lower film BL, and the lower film BL may be etched using the supplied etchant. In a region where the photoresist pattern PR is arranged, the lower film BL may not be etched (due to the photoresist pattern PR), and in a region where the photoresist pattern PR is not arranged, the lower film BL may be etched, thereby forming (or providing) a Figure 5 The wiring pattern FC shown in . For example, the wiring pattern FC is formed by the lower film BL through an etching process. The etchant used in the etching process of the lower film BL is not limited to any one embodiment. Any suitable etchant can be applied to the present disclosure without any particular limitation, as long as it can properly etch a film including a metal film, a metal oxide film and / or any combination thereof.

[0104] Reference Figure 5 and Figure 6 , the photoresist pattern PR on the wiring pattern FC may be removed by supplying the photoresist stripper composition SC according to one or more embodiments described above.

[0105] For example, the photoresist pattern PR can be stripped by using a photoresist stripper composition SC according to one or more embodiments. According to one or more embodiments, in a photoresist stripper composition SC including an amine compound, a cyclic alcohol, a protic polar organic solvent, a non-protic polar organic solvent, and a polyol, the amine compound can quickly or appropriately contact the photoresist pattern PR without causing any (or substantially no) damage due to evaporation, and the removed photoresist component can be quickly or appropriately dissolved. Therefore, the photoresist stripper composition SC according to one or more embodiments can dissolve the photoresist pattern PR by fully or appropriately expanding the photoresist pattern PR, and the photoresist pattern PR can be removed from the substrate BS. Since the above-mentioned photoresist stripper composition SC has an improved photoresist dissolving ability, the stripping process can be appropriately performed using the photoresist stripper composition according to one or more embodiments without leaving residues of the photoresist pattern PR on the wiring pattern FC and / or damaging the wiring pattern FC.

[0106] The method for forming (or providing) a pattern according to one or more embodiments may further include a rinsing operation of cleaning the substrate BS on which the wiring pattern FC is formed after the operation of removing the photoresist pattern PR. The method for forming (or providing) a pattern according to one or more embodiments does not leave a residue of the photoresist pattern PR on the wiring pattern FC by the rinsing operation (for example, there may be substantially no residue).

[0107] The wiring pattern FC formed by using the photoresist stripper composition SC according to the present disclosure is not particularly limited and may be a single layer film or a multilayer film. The wiring pattern FC may be a line of a gate electrode, a source electrode, and / or a drain electrode constituting a thin film transistor of a display device.

[0108] The photoresist stripper composition according to one or more embodiments of the present disclosure can remove the photoresist in a relatively short time by showing excellent or suitable stripping ability to the photoresist, and does not damage (or substantially does not damage) the lower film including the metal film, the metal oxide film and / or any suitable combination thereof. The photoresist stripper composition according to one or more embodiments has excellent or suitable solubility for the photoresist, thereby being able to improve economic efficiency by increasing the number of processed substrates, and has excellent or suitable cleaning ability, thereby being able to leave no residual solution and / or surface impurities after stripping the photoresist pattern. Due to such effects, the photoresist stripper composition according to the present disclosure can help improve the yield in the semiconductor and display device manufacturing process.

[0109] Hereinafter, a photoresist stripper composition according to one or more embodiments of the present disclosure and a wire manufactured using the photoresist stripper composition will be described with reference to examples and comparative examples. However, the examples described below are provided to help understand the present disclosure, and the scope of the present disclosure is not limited thereto.

[0110] Example

[0111] 1. Preparation of photoresist stripper composition and evaluation of stripping performance of the photoresist stripper composition

[0112] The photoresist stripper compositions of Examples 1-1 and 1-2 according to one or more embodiments of the present disclosure and the photoresist stripper compositions of Comparative Examples 1-1 to 1-8 were manufactured respectively according to the components and contents described in Table 1. The unit representing the content (e.g., amount) of each component in Table 1 refers to the percentage by weight relative to 100% of the total weight of the photoresist stripper composition.

[0113] In one or more embodiments, the evaluation results of the stripping performance of the photoresist stripper compositions of Examples 1-1 and 1-2 and Comparative Examples 1-1 to Comparative Examples 1-8 are shown in Table 1. In Table 1, the stripping time (seconds) represents the time required to strip the photoresist pattern by supplying the photoresist stripper composition. For example, a photoresist is applied to a substrate on which an aluminum (Al) metal film has been formed, and the substrate is heat-treated in an oven at a temperature of about 170°C, so that a metal film line glass substrate on which the photoresist is not removed is manufactured. The removal time of the cured and modified photoresist is measured by immersing the manufactured substrate in the photoresist stripper composition for the same length of time while maintaining the manufactured photoresist stripper composition at about 60°C.

[0114] The molecular weights and Hansen solubility parameters (HSPo) of the amine compounds used in Example 1-1 and Example 1-2 and Comparative Examples 1-1 to 1-8 are shown in Table 2.

[0115] Table 1

[0116]

[0117]

[0118] Table 2

[0119]

[0120]

[0121] Referring to Tables 1 and 2, it can be seen that the photoresist stripper compositions according to the examples using an amine compound having a molecular weight of about 80 g / mol or less and a Hansen solubility parameter (HSPo) of about 27 to 32 according to Equation 1 are each capable of removing a photoresist pattern in a shorter time than the photoresist stripper composition according to the comparative example.

[0122] For example, it can be confirmed that the photoresist patterns of Example 1-1 and Example 1-2 are each stripped within about 30 seconds (e.g., within less than 30 seconds). Therefore, the photoresist stripper composition according to the example shows excellent or suitable performance in removing the photoresist pattern. In addition, from the evaluation results of the stripping time according to each of Example 1-1 and Example 1-2, it can be confirmed that the smaller the molecular weight, the shorter the stripping time, and the larger the Hansen solubility parameter (HSPo), the shorter the stripping time.

[0123] It can be seen that the photoresist stripper compositions of Comparative Example 1-1, Comparative Example 1-2, Comparative Example 1-4 and Comparative Example 1-7 including an amine compound having a Hansen solubility parameter (HSPo) of less than about 27 and a molecular weight of greater than about 80 g / mol have longer stripping times than those according to the examples.

[0124] In addition, it can be seen that, compared with those according to the examples, since the amine compound contained in the photoresist stripper composition according to comparative examples 1-3 has a molecular weight of about 80 g / mol or less, but has an HSPo of less than about 27, the photoresist stripper composition according to comparative examples 1-3 has a longer stripping time.

[0125] It can be seen that, compared with those according to the examples, since the amine compound included in the photoresist stripper compositions according to Comparative Examples 1-5, Comparative Examples 1-6 and Comparative Examples 1-8 has a HSPo of about 27 to about 32, but a molecular weight greater than about 80 g / mol, the photoresist stripper compositions according to Comparative Examples 1-5, Comparative Examples 1-6 and Comparative Examples 1-8 have a longer stripping time.

[0126] When the photoresist stripper composition according to the embodiment is used, compared with the compositions used in Comparative Examples 1-1 to 1-8, it can be confirmed that the smaller the molecular weight of the amine compound, the shorter the stripping time, and the larger the HSPo of the amine compound, the shorter the stripping time.

[0127] 2. Preparation of photoresist stripper composition and evaluation of anti-corrosion performance of the photoresist stripper composition

[0128] The photoresist stripper compositions of Examples 2-1 to 2-6 according to one or more embodiments of the present disclosure and the photoresist stripper compositions of Comparative Examples 2-1 to 2-8 were manufactured according to the compositions and contents described in Tables 3 and 4, respectively. The unit representing the content (e.g., amount) of each component in Tables 3 and 4 represents a percentage by weight relative to 100% of the total weight of the photoresist stripper composition.

[0129] In one or more embodiments, the evaluation results of the anti-corrosion performance of the photoresist stripper compositions of Examples 2-1 to 2-6 are shown in Table 3, and the evaluation results of the anti-corrosion performance of the photoresist stripper compositions of Comparative Examples 2-1 to 2-8 are shown in Table 4. The evaluation of the anti-corrosion performance in Tables 3 and 4 is performed by relatively comparing the degree of corrosion of the aluminum metal wire after the substrate on which the aluminum metal wire has been formed and the photoresist has been removed is immersed in the photoresist stripper composition according to the examples and comparative examples for about 300 seconds. The evaluation criteria for the anti-corrosion performance are as follows:

[0130] Evaluation Criteria

[0131] ⊚: No change was observed in the surface of the metal film.

[0132] Δ: A detectable (eg, slight) change in the surface of the metal film is observed.

[0133] X: A clear (eg, significant) change in the surface of the metal film is observed.

[0134] Table 3

[0135]

[0136]

[0137] Table 4

[0138]

[0139] Referring to Table 3 and Table 4, it can be seen that the photoresist stripper composition according to the example does not substantially cause corrosion of the aluminum line compared to the photoresist stripper composition according to the comparative example. For example, it can be seen that the photoresist stripper composition according to the example has excellent or suitable anti-corrosion properties for each of the lower films.

[0140] For example, it can be confirmed by comparing the results of Examples 2-1 and 2-5 that the anticorrosion performance deteriorates when the carbon number of the polyol exceeds 6. In addition, it can be confirmed by comparing the results of Examples 2-3 and 2-7 that the anticorrosion performance deteriorates when the content (e.g., amount) of the polyol is less than about 0.05% by weight.

[0141] It can be confirmed by comparing Examples 2-2 and 2-6 that when the content (e.g., amount) of the amine compound exceeds about 15%, the anti-corrosion performance deteriorates. In one or more embodiments, it can be confirmed by comparing Examples 2-8 that when the content (e.g., amount) of the amine compound is less than about 5% by weight, the photoresist is not properly stripped, and thus the photoresist stripper composition is not suitable or appropriate for use regardless of its anti-corrosion performance.

[0142] In addition, it can be confirmed through Comparative Examples 2-4 that when the content (eg, amount) of the cyclic alcohol exceeds about 15% by weight, the anticorrosion performance is deteriorated.

[0143] 3. Evaluation of anti-corrosion performance 2

[0144] The anti-corrosion performance of the photoresist stripper compositions of Examples 2-3, 2-6, Comparative Examples 2-1, 2-2, and 2-4 was further evaluated and confirmed. Here, for the substrates used to evaluate the anti-corrosion performance, the edge thickness of the aluminum metal wire was measured by a field emission scanning electron microscope (FE-SEM). The results are shown in Tables 5 and Figure 7 as shown in .

[0145] Table 5

[0146]

[0147] Refer to Table 5 and Figure 7 It can be seen that the photoresist stripper compositions of Examples 2-3 and 2-6 have excellent or appropriate anti-corrosion performance compared with the photoresist stripper compositions of Comparative Examples 2-1, 2-2, and 2-4.

[0148] For example, it can be confirmed that Examples 2-3 and 2-6 have very small edge thicknesses compared to Comparative Examples 2-1, 2-2, and 2-4. Therefore, it can be seen that the exemplified photoresist stripper compositions exhibit excellent or appropriate anticorrosion performance.

[0149] The photoresist stripper composition according to one or more embodiments can exhibit excellent or appropriate photoresist stripping ability without (or substantially without) damaging the underlying film, thereby removing the photoresist in a relatively short time. In addition, the photoresist stripper composition according to one or more embodiments has excellent or appropriate dissolving ability and cleaning ability for the photoresist, so that no (e.g., substantially no) residual solution and / or surface impurities are left after stripping the photoresist.

[0150] When the above-described photoresist stripper composition is used in a method for forming (or providing) a pattern according to one or more embodiments, a stripping rate and a stripping efficiency may be improved.

[0151] In the present disclosure, description has been made with reference to the embodiments of the present disclosure, but those skilled in the art and / or ordinary technicians in the relevant technical field will understand that one or more appropriate modifications and changes may be made to the present disclosure within the scope of the present disclosure without departing from the spirit and technical scope of the present disclosure as provided in the claims.

[0152] The patterning device and / or any other related device or component according to the embodiments of the present invention described herein can be implemented using any suitable hardware, firmware (e.g., application specific integrated circuit), software, or a combination of software, firmware, and hardware. For example, the various components of the device can be formed on an integrated circuit (IC) chip or on a separate IC chip. In addition, the various components of the device can be implemented on a flexible printed circuit film, a tape carrier package (TCP), a printed circuit board (PCB), or formed on a substrate. In addition, the various components of the device can be processes or threads running on one or more processors in one or more computing devices, executing computer program instructions and interacting with other system components to perform various functions described herein. Computer program instructions are stored in a memory, and the memory can be implemented in a computing device using a standard memory device (such as, for example, a random access memory (RAM)). Computer program instructions can also be stored in other non-temporary computer-readable media, such as, for example, a compact disc read-only memory (CD-ROM) or a flash drive, etc. In addition, it should be appreciated by those skilled in the art that, without departing from the scope of the embodiments of the present disclosure, the functions of various computing devices can be combined or integrated into a single computing device, or the functions of a specific computing device can be distributed on one or more other computing devices.

[0153] Therefore, the technical scope of the present disclosure is not limited to the contents described in the detailed description of this specification, but should be determined by the claims and their equivalents.

Claims

1. A photoresist stripper composition, wherein: The photoresist stripper composition comprises: Relative to the total weight of the photoresist stripper composition, 5 to 15% by weight of an amine compound having a molecular weight of 80 g / mol or less and a Hansen solubility parameter according to Equation 1 of 27 to 32; 5 to 15% by weight of cyclic alcohol; 10% to 55% by weight of a protic polar organic solvent; 10 to 55% by weight of an aprotic polar organic solvent; and 0.05 to 1% by weight of polyols having 4 to 6 carbon atoms: Equation 1 HSPo=(HSPd 2 +HSPp 2 +HSPh 2 ) 0.5 , Where, in equation 1, HSPo is the Hansen solubility parameter, HSPd is the solubility parameter resulting from nonpolar dispersed bonds, HSPp is the solubility parameter resulting from polar bonds caused by permanent dipoles, and HSPh is the solubility parameter resulting from hydrogen bonds.

2. The photoresist stripper composition according to claim 1, wherein The amine compound includes at least one of monoisopropanolamine, 3-amino-1-propanol, monoethanolamine, and 2-methylaminoethanol.

3. The photoresist stripper composition according to claim 1, wherein The amine compound is a primary amine compound.

4. The photoresist stripper composition according to claim 1, wherein The cyclic alcohol has 4 to 6 carbon atoms in the molecule.

5. The photoresist stripper composition according to claim 1, wherein The proton polar organic solvent includes an ethylene glycol compound represented by Formula 1 or Formula 2: Formula 1 In Formula 1, R1 is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 15 ring carbon atoms, or a substituted or unsubstituted aryl group having 3 to 15 ring carbon atoms, and n is an integer of 1 or greater: Formula 2 and In Formula 2, R2 is a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R3 is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms.

6. The photoresist stripper composition according to claim 1, wherein The photoresist stripper composition does not include N-methyl-2-pyrrolidone and does not include N-methylformamide.

7. The photoresist stripper composition according to claim 1, wherein The aprotic polar organic solvent includes at least one of 2-pyrrolidone, 4-formylmorpholine, N,N-dimethylpropionamide, 1,3-dimethyl-2-imidazolidinone, N,N-dimethylacetoacetamide, sulfolane, N-ethylformamide and equamide.

8. The photoresist stripper composition according to claim 1, wherein The polyol includes at least one of erythritol, threitol, arabitol, xylitol, ribitol, mannitol, sorbitol, galactitol, fucitol and iditol.

9. A method for forming a pattern, wherein: The method comprises: applying a photoresist pattern on a substrate on which an underlying film is provided; applying a wiring pattern using the photoresist pattern; and The photoresist pattern is removed by the photoresist stripper composition according to any one of claims 1 to 8.

10. The method according to claim 9, wherein: The lower film comprises: A metal film selected from aluminum, copper and alloys thereof; A metal oxide film selected from a silicon oxide film and a silicon nitride film; or Any combination of them.

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