Wire breakage treatment device, wire cutting equipment and wire cutting method

Abstract

This disclosure provides a wire breakage post-processing apparatus, wire cutting equipment, and wire cutting method. The wire breakage post-processing apparatus includes: a separation component comprising a plurality of first separation parts and a plurality of second separation parts, wherein the plurality of first separation parts are arranged sequentially at intervals along a first direction and are used to engage in a first gap between adjacent silicon wafers that have been cut in the silicon rod to be cut, thereby isolating adjacent silicon wafers; the plurality of second separation parts are arranged sequentially at intervals along the first direction and are used to engage in a second gap between adjacent cut lines that have been repaired, thereby isolating adjacent cut lines; and a moving component connected to the separation component, wherein the moving component is capable of engaging or disengaging the first separation parts into or out of the first gap and engaging or disengaging the second separation parts into or out of the second gap. The wire breakage post-processing apparatus, wire cutting equipment, and wire cutting method of this disclosure can quickly restore the silicon rod to its pre-breakage processing position after a wire breakage.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and in particular to a wire breakage post-processing device, wire cutting equipment, and wire cutting method. Background Technology

[0002] As the carrier of semiconductor circuit manufacturing processes, the quality of silicon wafers has a decisive impact on the formation of integrated circuits. Currently, the main processes in the initial silicon wafer forming process include: silicon rod cutting, physical and chemical grinding, chemical etching, and physical and chemical polishing. Silicon rod cutting is one of the core processes in silicon wafer forming, mainly including multi-wire slurry (SiC) cutting and inner circle cutting. The mainstream process currently used is multi-wire cutting because it has advantages such as higher efficiency, better quality, and higher wafer yield compared to inner circle cutting.

[0003] Multi-wire cutting is a currently advanced slicing technology. Its principle involves sequentially winding cutting wires into guide grooves spaced apart on the circumferential surface of a spool 11a, creating an array of cutting segments. In the cutting of silicon rods, slurry is sprayed onto the cutting wires at a certain pressure. The cutting wires, carrying the slurry, cut the silicon rod through reciprocating motion. Besides cutting the silicon rod, the slurry also lubricates and cleans away debris generated during cutting, and also carries away the heat generated during the cutting process.

[0004] During wire cutting, the cutting wire can be worn down by the slurry and silicon rod, and in severe cases, wire breakage may occur. After wire breakage, the silicon rod needs to be lifted, the broken section reconnected or a new cutting wire replaced, and after the cutting wire is repaired, the silicon rod lowered back to the position where the wire broke.

[0005] However, because the spacing between adjacent silicon wafers after the silicon ingot has been cut is small, they attract each other, and the cutting wire needs to be able to enter between the wafers when the silicon ingot descends. However, because the gap between the adjacent cut silicon wafers is too small when the silicon ingot descends, this is quite difficult. If the silicon ingot cannot return to the processing position when the wire broke, the silicon ingot cannot continue cutting, resulting in product loss.

[0006] Currently, the method for handling wire breakage in wire EDM equipment is to use an air gun to separate the already cut silicon wafer, allowing the cutting wire to enter the silicon ingot for further cutting. However, this method is time-consuming, and the longer the recovery time after wire breakage, the greater the impact on thermal deformation of the silicon wafer surface, ultimately leading to a deterioration in the silicon wafer flatness parameters and a loss in yield. Summary of the Invention

[0007] To address at least one of the technical problems in the prior art, this disclosure provides a wire breakage post-processing device, a wire cutting device, and a wire cutting method.

[0008] The technical solutions provided in this disclosure are as follows:

[0009] In a first aspect, embodiments of this disclosure provide a wire breakage post-processing device, applied in a wire cutting device capable of cutting silicon rods; the wire breakage post-processing device includes:

[0010] A separation assembly includes a plurality of first separation components and a plurality of second separation components. The plurality of first separation components are arranged at intervals along a first direction and are configured to engage in a first gap between adjacent silicon wafers that have been cut in a silicon rod to be cut, thereby isolating adjacent silicon wafers. The plurality of second separation components are arranged at intervals along the first direction and are configured to engage in a second gap between repaired adjacent dicing lines, thereby isolating adjacent dicing lines. The first direction is the axial direction of the silicon rod to be cut.

[0011] A movable component is connected to the separating component, the movable component being capable of engaging or disengaging the first separating component into or out of the first gap, and engaging or disengaging the second separating component into or out of the second gap.

[0012] For example, the separation assembly includes at least one set of separation units. Each set of separation units includes a connecting rod extending axially along the first direction and a plurality of comb tooth structures arranged sequentially at intervals along the axial direction of the connecting rod. Each comb tooth structure includes a comb body, a first comb tooth, and a second comb tooth. The comb body extends perpendicular to the axial direction of the connecting rod. The first comb tooth and the second comb tooth are connected to the comb body and are spaced apart from each other. The first comb tooth in the plurality of comb tooth structures cooperate to form a plurality of first separation components, and the second comb tooth in the plurality of comb tooth structures cooperate to form a plurality of second separation components.

[0013] For example, the moving component includes a rotating mechanism, the rotating mechanism including a rotating shaft extending axially along the first direction, wherein the connecting rod is connected to the rotating shaft, and a plurality of the comb tooth structures are rotatable about the rotating shaft to cause a plurality of first comb tooth portions to engage or disengage from the first gap, and a plurality of second comb tooth portions to engage or disengage from the second gap.

[0014] For example, the moving component further includes a lifting mechanism, one of the rotating mechanism and the connecting rod is connected to the lifting mechanism, the lifting mechanism being configured to move the connecting rod in a second direction toward or away from the silicon rod to be cut, wherein the second direction is the direction from the silicon rod to be cut toward the cutting line.

[0015] For example, the lifting mechanism includes a guide rail and a slider, the slider being slidably engaged with the guide rail, and the rotating mechanism and the connecting rod being mounted on the slider.

[0016] For example, the separation assembly includes two sets of separation units located on opposite sides of the silicon rod to be cut in a third direction, the third direction being perpendicular to the first direction and parallel to the silicon wafer, wherein a comb groove is formed between the first comb tooth portion and the second comb tooth portion, and the openings of the comb groove in the two sets of separation units are arranged facing each other.

[0017] For example, in each set of separation units, the spacing between two adjacent comb tooth structures along the extension direction of the connecting rod is 1.035 to 1.060 mm.

[0018] For example, in each set of the separation units, the spacing between two adjacent comb tooth structures along the extension direction of the connecting rod is adjustable.

[0019] Secondly, embodiments of this disclosure provide a wire cutting device, including the wire breakage post-processing apparatus as described above.

[0020] Thirdly, embodiments of this disclosure provide a wire cutting method applied to the wire cutting equipment described above, the wire cutting method comprising the following steps:

[0021] If the cutting line breaks during the wire cutting process, the silicon rod is moved away from the cutting line so that it is removed from the cutting line.

[0022] The separating component is moved by the moving component, so that a plurality of the first separating components are engaged in the first gap between adjacent silicon wafers that have been cut in the silicon rod to be cut, so as to separate the adjacent silicon wafers.

[0023] The silicon rod is moved toward the repaired dicing line so that several of the second separation components are engaged in the second gap between the repaired adjacent dicing lines, separating the adjacent dicing lines, until the repaired dicing lines enter the second gap between the adjacent silicon wafers;

[0024] The separating component is moved by the moving component so that the first separating component is disengaged from the first gap and the second separating component is disengaged from the second gap.

[0025] The beneficial effects of the embodiments disclosed herein are as follows:

[0026] In the wire breakage post-processing apparatus, wire cutting equipment, and wire cutting method provided in this disclosure, the wire breakage post-processing apparatus includes a separation component and a moving component. After a wire breakage occurs during the wire cutting process, the silicon rod can be moved away from the wire to detach it from the wire. The separation component is moved by the moving component to allow several first separation components to engage in a first gap between adjacent silicon wafers that have been cut in the silicon rod to be cut, thereby isolating the adjacent silicon wafers. The silicon rod is then moved towards a direction close to the repaired wire to allow several second separation components to engage in a second gap between the repaired adjacent wires, isolating the adjacent wires, until the repaired wire enters the second gap between the adjacent silicon wafers. The separation component is moved by the moving component to allow the first separation components to disengage from the first gap and the second separation components to disengage from the second gap. In this way, the post-cutting device can ensure that the first gap between adjacent silicon wafers that have been cut after the cutting wire breaks is separated by the first separating component, so that the repaired cutting wire can smoothly enter the silicon rod to continue cutting. The silicon rod can be quickly restored to the processing position before the wire breakage and continue wire cutting. This solves the problem of long recovery time after wire breakage in the prior art, increases production capacity, reduces the impact of thermal deformation of silicon wafers, and improves product yield. Attached Figure Description

[0027] Figure 1 This diagram illustrates the structure of a wire cutting device in the prior art.

[0028] Figure 2 A schematic diagram showing the structure of the silicon rod to be cut after the cutting line breaks;

[0029] Figure 3 This is one of the structural schematic diagrams of the wire cutting equipment in the embodiments of this disclosure;

[0030] Figure 4 This is a second schematic diagram of the wire cutting equipment in an embodiment of the present disclosure;

[0031] Figure 5 This is a schematic diagram showing the structure of a set of separation units in the wire cutting equipment of this disclosure. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure without creative effort are within the scope of protection of this disclosure.

[0033] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an,” “a,” or “the,” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “including,” “comprising,” or “containing,” and similar terms mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. The terms “connected,” “linked,” or similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” and “right,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0034] The features such as "parallel," "perpendicular," and "identical" used in the embodiments of this disclosure include features in the strict sense of "parallel," "perpendicular," and "identical," as well as cases where "approximately parallel," "approximately perpendicular," and "approximately identical" include certain tolerances. Taking into account the measurement and the tolerances associated with the measurement of a specific quantity (e.g., limitations of the measurement system), they represent the acceptable deviation range for a specific value as determined by a person skilled in the art. For example, "approximately" can mean within one or more standard deviations, or within 3% or 5% of said value.

[0035] Furthermore, throughout this document, unless otherwise defined, the terms “substantially,” “essentially,” “approximately,” and “about” are used to describe and explain small variations. When used with an event or situation, these terms can cover situations where the event or situation occurs precisely or approximately. For example, when used with a numerical value, these terms can include a range of variation of the numerical value less than or equal to 10%, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. The term “substantially coplanar” can refer to two surfaces arranged along the same plane within a micrometer range, for example, within 40 μm, 30 μm, 20 μm, 10 μm, or 1 μm.

[0036] See Figure 1 It shows a schematic diagram of a conventional wire cutting device, which can be understood as follows: Figure 1 The structure shown is for illustrative purposes only and does not imply that those skilled in the art will not be able to apply it to specific implementations. Figure 1The present invention does not impose specific limitations on adding or removing components from the structural composition shown.

[0037] like Figure 1 As shown, the wire cutting device may include a wire cutting unit 11 and a carrier unit 12; the wire cutting unit 11 may be placed below the carrier unit 12 in the vertical direction in some examples, or above the carrier unit 12 in the vertical direction in some examples.

[0038] Specifically, the wire cutting unit 11 may include multiple spools 11a and cutting wires 30, the cutting wires 30 being wound around the spools 11a to form an array of mutually parallel cutting segments; Figure 1 In this example, two spools 11a are used, and the spools 11a and the cutting line 30 are oriented towards and away from the reciprocating motion direction of the bearing unit 12, as shown below. Figure 1 As indicated by the solid arrows, the reciprocating speed can be, for example, 10 m / s to 15 m / s. The support unit 12 is used to load and fix the silicon rod 20 to be cut. Figure 1 In the example shown, the support unit 12 may include a base 121 and an intermediate component 122. The intermediate component 122 can fix the silicon rod to be cut to the base 121. For example, the silicon rod to be cut can be fixed to the base 121 by using resin to bond its circumferential surface to the lower or upper surface of the base.

[0039] for Figure 1 The wire cutting device shown can move the wire cutting unit 11 or the support unit 12 to make the cutting wire 30 and the silicon rod 20 to be cut move towards each other in the vertical direction. After the cutting wire 30 and the silicon rod 20 to be cut come into contact with each other, the cutting wire 30 is used to cut the silicon rod 20 to be cut by moving along its extension direction.

[0040] In such Figure 1 In the example shown, the wire cutting unit 11 can be moved in the direction indicated by the arrow to achieve vertical opposite movement between the cutting line 30 and the silicon rod 20 to be cut.

[0041] It should be noted that, in this embodiment of the invention, a lifting device (not shown in the figure) is added to achieve relative movement between the wire cutting unit 11 and the supporting unit 12. It is understood that those skilled in the art can also achieve movement of the wire cutting unit 11 or the supporting unit 12 in other ways according to actual needs and implementation scenarios.

[0042] It should be noted that in the wire dicing operation, the diameter of the spool 11a is larger than the diameter of the silicon rod, making the distance between the dicing segment arrays located on the upper and lower sides of the spool 11a greater than the diameter of the silicon rod. Thus, only the dicing segment arrays located on one side of the spool 11a will cut the silicon rod, while the dicing segment arrays on the other side of the spool 11a will not contact the silicon rod. Figure 1 For example, the cutting wire travels around the spool 11a. Only the array of cutting wire segments located above the spool 11a cuts the silicon wafer; therefore, the wire cutting area is also located on the upper side of the spool 11a. The cutting wire segments leaving the wire cutting area travel to the lower side of the spool 11a. After traveling a certain distance without load, they return to the upper side of the spool 11a and re-enter the wire cutting area to participate in the cutting operation. This process continues until the cutting wire leaves the spool 11a and is retrieved by the take-up reel. During the wire cutting process, the cutting wire carries the slurry to the cutting position through reciprocating motion, thus continuously being worn by the slurry and silicon rod. Furthermore, the cutting wire is always under a certain tension.

[0043] For the reasons mentioned above, the cutting wire may break during the cutting process. If the cutting wire breaks at one point, the entire cutting wire becomes unusable, and the cutting operation must be interrupted. It is particularly important to note that because the entire cutting wire is subjected to a certain tension during wire cutting, any part of the wire that has undergone the wire cutting operation can break. For example, the break may occur within the cutting area or outside the cutting area; in other words, the location of the break is uncertain.

[0044] After a wire breakage occurs, the dicing wire needs to be repaired by replacing it. Before restarting the dicing operation, the dicing wire must be restored to its original position within the silicon rod before the breakage occurred.

[0045] However, in existing technologies, during wire cutting, the cutting wire can be worn down by the slurry and silicon rod, and in severe cases, wire breakage may occur. After a wire breakage occurs, the silicon rod needs to be lifted, the broken section reconnected or a new cutting wire replaced, and after the cutting wire is repaired, the silicon rod is lowered back to the position where the wire broke.

[0046] However, please see Figure 2 As shown, due to the small spacing between adjacent silicon wafers 21 in the already cut portion of the silicon rod 10, they attract each other. When the silicon rod 20 to be cut descends, it is necessary to ensure that the cutting line can enter between the silicon wafers 21. However, because the first gap A between the already cut adjacent silicon wafers 21 is too small when the silicon rod 20 to be cut descends, this is difficult. If the silicon rod 20 to be cut cannot return to the processing position when the cutting line was broken, cutting cannot continue, resulting in product loss.

[0047] Currently, the method for handling wire breakage in wire EDM equipment is to use an air gun to separate the already cut silicon wafer, allowing the cutting wire to enter the silicon ingot for further cutting. However, this method is time-consuming, and the longer the recovery time after wire breakage, the greater the impact on thermal deformation of the silicon wafer surface, ultimately leading to a deterioration in the silicon wafer flatness parameters and a loss in yield.

[0048] In view of this, the present disclosure provides a wire breakage post-processing device, which can be applied to wire cutting equipment for cutting silicon rods. It can solve the problem of long recovery time after wire breakage in the prior art, increase production capacity, reduce the impact of thermal deformation of silicon wafers, and improve product yield.

[0049] Please see Figure 3 and Figure 4 As shown, the post-disconnection processing device provided in this embodiment includes a separation component 100 and a moving component 200.

[0050] Please combine Figures 2 to 5 As shown, the separation assembly 100 includes a plurality of first separation components 110 and a plurality of second separation components 120. The plurality of first separation components 110 are arranged sequentially at intervals along a first direction X. The plurality of first separation components 110 are configured to be inserted into a first gap A between adjacent silicon wafers 21 that have been cut in the silicon rod 20 to be cut, so as to isolate the adjacent silicon wafers 21. The plurality of second separation components 120 are arranged sequentially at intervals along the first direction X. The plurality of second separation components 120 are configured to be inserted into a second gap between adjacent cut lines 30 that have been repaired, so as to isolate the adjacent cut lines 30. The first direction X is the axial direction of the silicon rod 20 to be cut.

[0051] The moving component 200 is connected to the separating component 100. The moving component 200 can drive the first separating component 110 to engage or disengage from the first gap A, and drive the second separating component 120 to engage or disengage from the second gap.

[0052] After the cutting line 30 breaks during the wire cutting process, the silicon rod 20 to be cut can be moved away from the cutting line 30 to detach it from the cutting line 30. The separation component 100 is moved by the moving component 200 so that a plurality of the first separation components 110 are engaged in the first gap A between the adjacent silicon wafers 21 that have been cut in the silicon rod 20 to isolate the adjacent silicon wafers 21. The silicon rod 20 to be cut is moved towards the repaired cutting line 30 so that a plurality of the second separation components 120 are engaged in the second gap between the repaired adjacent cutting lines 30 to isolate the adjacent cutting lines 30 until the repaired cutting line 30 enters the second gap between the adjacent silicon wafers 21. The separation component 100 is moved by the moving component 200 so that the first separation components 110 are disengaged from the first gap A and the second separation components 120 are disengaged from the second gap.

[0053] In this way, the post-cut wire processing device can ensure that the first gap A between adjacent silicon wafers 21 that have been cut after the cutting wire 30 is cut is separated by the first separation component 110, so that the repaired cutting wire 30 can smoothly enter the silicon rod 20 to be cut and continue cutting. The silicon rod 20 to be cut can be quickly restored to the processing position before the wire breakage and continue wire cutting. This solves the problem of long recovery time after wire breakage in the prior art, increases production capacity, reduces the impact of thermal deformation of silicon wafers 21, and improves product yield.

[0054] As an exemplary embodiment, such as Figures 2 to 5 As shown, the separation assembly 100 includes at least one set of separation units 100A. Each set of separation units 100A includes a connecting rod 101 extending along the first direction X-axis and a plurality of comb tooth structures 102 arranged sequentially at intervals along the axial direction of the connecting rod 101. Each comb tooth structure 102 includes a comb body 1021, a first comb tooth 1022, and a second comb tooth 1023. The comb body 1021 extends perpendicular to the axial direction of the connecting rod 101. The first comb tooth 1022 and the second comb tooth 1023 are connected to the comb body 1021 and are spaced apart from each other. The first comb tooth 1022 in the plurality of comb tooth structures 102 cooperate to form a plurality of first separation components 110, and the second comb tooth 1023 in the plurality of comb tooth structures 102 cooperate to form a plurality of second separation components 120.

[0055] Using the above scheme, the separating component 100 is implemented through a comb-tooth structure 102, and the first comb tooth portion 1022 and the second comb tooth portion 1023 in the comb tooth structure 102 can move synchronously with the comb body portion 1021. A plurality of comb tooth structures 102 can move synchronously under the drive of the connecting rod 101. The structure is simple. By synchronously moving a plurality of comb tooth structures 102, the first comb tooth portion 1022 and the second comb tooth portion 1023 can be simultaneously moved to positions where they are engaged with the first gap A and the second gap, or disengaged from the first gap A and the second gap, respectively. It should be understood that in other embodiments not illustrated in this disclosure, the specific construction of the separating component 100 is not limited to this.

[0056] Furthermore, in some embodiments, such as Figure 3 and Figure 4 As shown, the moving component 200 includes a rotating mechanism 210, which includes a rotating shaft 211. The axial direction of the rotating shaft 211 extends along the first direction X. The connecting rod 101 is connected to the rotating shaft 211. A plurality of the comb tooth structures 102 are rotatable around the rotating shaft 211 so that a plurality of the first comb tooth portions 1022 engage or disengage from the first gap A, and a plurality of the second comb tooth portions 1023 engage or disengage from the second gap.

[0057] Using the above solution, the connecting rod 101 is rotated by the rotating shaft 211, so that the comb structure 102 can be engaged or disengaged from the first gap A and the second gap. The structure is simple, easy to implement, and easy to operate.

[0058] In addition, in some exemplary embodiments, the moving component 200 may also include a lifting mechanism 220, one of the rotating mechanism 210 and the connecting rod 101 being connected to the lifting mechanism 220, the lifting mechanism 220 being configured to drive the connecting rod 101 to move along a second direction Y toward a direction closer to or away from the silicon rod 20 to be cut, wherein the second direction Y is the direction from the silicon rod 20 to the cutting line 30.

[0059] In the above scheme, after the cutting line 30 breaks, the silicon rod 20 to be cut will first be lifted away from the cutting line 30 in a direction away from the cutting line 30. After the cutting line 30 is repaired, it will move towards the cutting line 30 until the cutting line 30 reaches the processing position before the breakage. Therefore, the separation component 100 can move up and down in the direction from the silicon rod 20 to the cutting line 30 (i.e., the second direction Y) through the lifting mechanism 220 to adapt to the position change of the silicon rod 20 to be cut.

[0060] Furthermore, the separation component 100 can be raised and lowered along the second direction Y via the lifting mechanism 220. In the event of no wire breakage, during normal cutting, the separation component 100 can be moved away from the silicon rod 20 to be cut, so as to avoid interference between the two.

[0061] As an exemplary embodiment, such as Figure 3 and Figure 4 As shown, the lifting mechanism 220 includes a guide rail 221 and a slider 222, the slider 222 being slidably engaged with the guide rail 221, and the rotating mechanism 210 and the connecting rod 101 being mounted on the slider 222. For example, the guide rail 221 can be any suitable component such as a lead screw or telescopic rod. However, it is understood that the specific structure of the lifting mechanism 220 is not limited to this.

[0062] Furthermore, as an exemplary embodiment, such as Figure 3 As shown, the separation assembly 100 includes two sets of separation units 100A, which are located on opposite sides of the silicon rod 20 to be cut in the third direction Z. The third direction Z is perpendicular to the first direction X and parallel to the silicon wafer 21. A comb groove 1024 is formed between the first comb tooth portion 1022 and the second comb tooth portion 1023. The openings of the comb groove 1024 in the two sets of separation units 100A are arranged facing each other.

[0063] In the above scheme, the two sets of separation units 100A can be respectively inserted into the first gap A between adjacent silicon wafers 21 from both radial sides of the silicon rod 20 to be cut, so as to ensure that the first gap A between silicon wafers 21 is uniform and that the silicon wafers 21 are flat.

[0064] Furthermore, as an exemplary embodiment, in each set of separation units 100A, the spacing between two adjacent comb structures 102 along the extending direction of the connecting rod 101 is 1.035 to 1.060 mm. A suitable spacing can be selected based on the thickness of the processed silicon wafer 21.

[0065] In some exemplary embodiments, in each set of separation units 100A, the spacing between two adjacent comb tooth structures 102 along the extending direction of the connecting rod 101 can be fixed. For example, in a wire cutting device, the spool 11a in the wire cutting unit 11 has a groove for winding the cutting wire 30, and the spacing between two adjacent comb tooth structures 102 can be set according to the groove spacing on the spool 11a.

[0066] In other embodiments, in each set of separation units 100A, the spacing between two adjacent comb tooth structures 102 along the extending direction of the connecting rod 101 can be adjustable. For example, the comb tooth structure 102 can be slidably connected to the connecting rod 101 so that the spacing between two adjacent comb tooth structures 102 along the extending direction of the connecting rod 101 is adjustable.

[0067] Furthermore, as an exemplary embodiment, the comb structure 102 can be made of materials such as PVC (polyvinyl chloride), PU (polyurethane), PTFE (polytetrafluoroethylene) and carbon materials (such as carbon fiber).

[0068] Furthermore, this disclosure provides a wire cutting device, including a wire breakage post-processing apparatus provided in this disclosure. Besides the aforementioned wire breakage post-processing apparatus, other essential components of the wire cutting device (such as the wire cutting unit) are readily understood by those skilled in the art and will not be described in detail here, nor should they be construed as limitations on this disclosure. Since the principle by which this wire cutting device solves the problem is similar to that of the aforementioned wire breakage post-processing apparatus, embodiments of the wire cutting device provided in this disclosure can refer to embodiments of the aforementioned wire breakage post-processing apparatus provided in this disclosure, and will not be repeated here.

[0069] Furthermore, this disclosure provides a wire cutting method applied to the wire cutting equipment provided in this disclosure, the wire cutting method comprising the following steps:

[0070] Step S01: After the cutting line 30 breaks during the wire cutting process, move the silicon rod away from the cutting line 30 so that the silicon rod is removed from the cutting line 30.

[0071] Step S02: Move the separation component 100 by the moving component 200 so that a plurality of the first separation components 110 are inserted into the first gap A between the adjacent silicon wafers 21 that have been cut in the silicon rod 20 to be cut, so as to separate the adjacent silicon wafers 21.

[0072] Step S03: Move the silicon rod toward the direction of the repaired dicing line 30 so that a plurality of the second separation components 120 are inserted into the second gap between the repaired adjacent dicing lines 30, separating the adjacent dicing lines 30, until the repaired dicing lines 30 enter the second gap between the adjacent silicon wafers 21.

[0073] Step S04: Move the separation component 100 by the moving component 200 so that the first separation component 110 is disengaged from the first gap A and the second separation component 120 is disengaged from the second gap.

[0074] Since the principle by which this wire cutting device solves the problem is similar to that of the above-mentioned wire breakage post-processing device, the embodiments of the wire cutting device provided in this disclosure can refer to the embodiments of the above-mentioned wire breakage post-processing device provided in this disclosure, and will not be repeated here.

[0075] The following points need to be explained:

[0076] (1) The accompanying drawings of the embodiments of this disclosure only involve the structures involved in the embodiments of this disclosure. Other structures can be referred to the general design.

[0077] (2) For clarity, the thickness of layers or regions is enlarged or reduced in the drawings used to describe embodiments of the present disclosure, i.e., these drawings are not drawn to actual scale. It will be understood that when an element such as a layer, film, region or substrate is referred to as being “above” or “below” another element, the element may be “directly” located “above” or “below” the other element or there may be intermediate elements.

[0078] (3) Where there is no conflict, the embodiments of this disclosure and the features in the embodiments can be combined with each other to obtain new embodiments.

[0079] The above are merely specific embodiments of this disclosure, but the scope of protection of this disclosure is not limited thereto. The scope of protection of this disclosure shall be determined by the scope of the claims.

Claims

1. A wire breakage post-processing device, applied in a wire cutting machine capable of cutting silicon rods; characterized in that, The post-break processing device includes: A separation assembly includes a plurality of first separation components and a plurality of second separation components. The plurality of first separation components are arranged at intervals along a first direction and are configured to engage in a first gap between adjacent silicon wafers that have been cut in a silicon rod to be cut, thereby isolating adjacent silicon wafers. The plurality of second separation components are arranged at intervals along the first direction and are configured to engage in a second gap between repaired adjacent dicing lines, thereby isolating adjacent dicing lines. The first direction is the axial direction of the silicon rod to be cut. A movable component is connected to the separating component, the movable component being capable of engaging or disengaging the first separating component into or out of the first gap, and engaging or disengaging the second separating component into or out of the second gap; The separation assembly includes at least one set of separation units. Each set of separation units includes a connecting rod extending axially along the first direction and a plurality of comb tooth structures arranged sequentially at intervals along the axial direction of the connecting rod. Each comb tooth structure includes a comb body, a first comb tooth, and a second comb tooth. The comb body extends perpendicular to the axial direction of the connecting rod. The first comb tooth and the second comb tooth are connected to the comb body and spaced apart from each other. The first comb tooth in the plurality of comb tooth structures cooperate to form a plurality of first separation components, and the second comb tooth in the plurality of comb tooth structures cooperate to form a plurality of second separation components.

2. The post-breakage processing device according to claim 1, characterized in that, The moving component includes a rotating mechanism, which includes a rotating shaft extending axially along the first direction. The connecting rod is connected to the rotating shaft, and a plurality of the comb tooth structures are rotatable about the rotating shaft to allow a plurality of the first comb tooth portions to engage or disengage from the first gap, and a plurality of the second comb tooth portions to engage or disengage from the second gap.

3. The post-breakage processing device according to claim 2, characterized in that, The moving component further includes a lifting mechanism, one of the rotating mechanism and the connecting rod is connected to the lifting mechanism, the lifting mechanism being configured to drive the connecting rod to move in a second direction toward or away from the silicon rod to be cut, wherein the second direction is from the silicon rod to be cut toward the cutting line.

4. The post-breakage processing device according to claim 3, characterized in that, The lifting mechanism includes a guide rail and a slider, the slider being slidably engaged with the guide rail, and the rotating mechanism and the connecting rod being mounted on the slider.

5. The post-breakage processing device according to claim 1, characterized in that, The separation assembly includes two sets of separation units, which are located on opposite sides of the silicon rod to be cut in a third direction. The third direction is perpendicular to the first direction and parallel to the silicon wafer. A comb groove is formed between the first comb tooth portion and the second comb tooth portion, and the openings of the comb groove in the two sets of separation units are arranged facing each other.

6. The post-breakage processing device according to claim 1, characterized in that, In each of the separation units, the spacing between two adjacent comb tooth structures along the extension direction of the connecting rod is 1.035 to 1.060 mm.

7. The post-breakage processing device according to claim 1, characterized in that, In each of the separation units, the spacing between two adjacent comb structures along the extension direction of the connecting rod is adjustable.

8. A wire cutting device, characterized in that, Includes the post-break processing device as described in any one of claims 1 to 7.

9. A wire cutting method, characterized in that, Applied to the wire cutting equipment as described in claim 8, the wire cutting method includes the following steps: If the cutting line breaks during the wire cutting process, the silicon rod is moved away from the cutting line so that it is removed from the cutting line. The separating component is moved by the moving component, so that a plurality of the first separating components are inserted into the first gap between adjacent silicon wafers that have been cut in the silicon rod to be cut, so as to separate the adjacent silicon wafers. The silicon rod is moved toward the repaired dicing line so that several of the second separation components are engaged in the second gap between the repaired adjacent dicing lines, separating the adjacent dicing lines, until the repaired dicing line enters the first gap between the adjacent silicon wafers; The separating component is moved by the moving component so that the first separating component is disengaged from the first gap and the second separating component is disengaged from the second gap.

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