Wafer surface processing device and method
By designing a wafer surface processing device with a moving mechanism including a variety of driving modules, the problem of insufficient flatness of the wafer to be bonded in the prior art is solved, and the all-round atomic level flattening of the wafer surface is achieved, ensuring high-quality use of the wafer.
Patent Information
- Application Number
- CN202510060277.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-15
- Publication Date
- 2025-04-01
- Estimated Expiration
- 2045-01-15
AI Technical Summary
The structure of the existing wafer surface processing device is simple, and the movement and angle adjustment of the wafer cannot be completed, resulting in the flatness of the part of the wafer's area to be bonded to the atomic level, affecting the use of the wafer.
A wafer surface processing device is designed including a vacuum chamber, a clamping mechanism and a moving mechanism. The moving mechanism consists of a first linear drive module, a second linear drive module and a rotary drive module. It can drive the clamping mechanism to move and rotate in different directions, so as to change the angle between the wafer and the beam, and ensure that the beam can hit the wafer surface in all directions.
Through this device, it is possible to achieve all-round flatness of the wafer to be bonded, reach the atomic level flatness, ensure the performance of the wafer, and do not cause the vacuum degree to decrease or contamination in a vacuum environment.
Smart Images

Figure CN119517837B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of wafer processing, and in particular to a wafer surface processing device and method. Background Art
[0002] Before wafer bonding, the surface of the wafer to be bonded needs to be processed to make the surface of the wafer to be bonded flat at the atomic level. The existing wafer bonding surface processing work needs to be performed in a vacuum environment. When the wafer bonding surface is processed, a beam will be emitted into the vacuum environment, and the beam will be used to bombard the surface of the wafer to be bonded to make the surface of the wafer to be bonded flat at the atomic level. However, the beam enters the vacuum chamber in a fixed path. When the surface of the wafer to be bonded is processed, the placement position and angle of the wafer need to be adjusted multiple times. The fixture used to clamp the wafer in the vacuum chamber has a relatively simple overall structure and is unable to complete the mechanical movement of driving the wafer to move and adjusting the angle of the wafer, resulting in the flatness of some areas of the surface of the wafer to be bonded failing to reach atomic level flatness, affecting the use of the wafer.
[0003] Therefore, there is an urgent need for a wafer surface processing device and method to solve the above technical problems. Summary of the invention
[0004] The first purpose of the present invention is to provide a wafer surface processing device that can solve the problem that the clamp used to clamp the wafer in the existing cavity has a relatively simple overall structure and cannot complete the mechanical movement of driving the wafer to move and adjust the angle of the wafer, resulting in the flatness of some areas of the wafer to be bonded surface failing to reach atomic-level flatness, affecting the use of the wafer.
[0005] To achieve this object, the present invention adopts the following technical solutions:
[0006] A wafer surface processing device, comprising:
[0007] A vacuum chamber, wherein a side wall of the vacuum chamber is provided with an emission port, and a beam can enter the vacuum chamber from the emission port;
[0008] A clamping mechanism, disposed in the vacuum chamber, for clamping a wafer;
[0009] A motion mechanism is connected to the clamping mechanism, and is used to drive the wafer clamped by the clamping mechanism to face the emission port and drive the wafer to move continuously, so that the beam continuously hits the surface of the wafer; the motion mechanism includes a first linear drive module, a second linear drive module and a rotation drive module, the clamping mechanism is connected to the first linear drive module, the first linear drive module is used to drive the clamping mechanism to move in a first direction, the first linear drive module is connected to the second linear drive module, the second linear drive module is used to drive the first linear drive module to move in a second direction, and the rotation drive module can drive the second linear drive module to rotate, and can change the angle between the wafer and the beam.
[0010] As an optimal technical solution for the wafer surface processing device, the first linear drive module includes a first driving member and a first transmission member, the first driving member is connected to the first transmission member and is used to drive the first transmission member to move along the first direction, and the clamping mechanism is connected to the first transmission member.
[0011] As a preferred technical solution of the wafer surface processing device, the second linear drive module includes a second driving member and a second transmission member, and the second driving member is connected to the second transmission member to drive the second transmission member to move along the second direction;
[0012] The first linear drive module also includes a first base plate, the first driving member and the first transmission member are both arranged on the first base plate, and the second transmission member is connected to the first base plate.
[0013] As an optimal technical solution for the wafer surface processing device, the rotation drive module includes a third driving member and a rotation support bearing seat, the second linear drive module also includes a second base plate, the first base plate is overlapped on the second base plate, the second base plate is rotatably arranged between the two rotation support bearing seats, and the third driving member is transmission-connected to the second base plate for driving the second base plate to rotate.
[0014] As a preferred technical solution of the wafer surface processing device, the second driving member and the third driving member are arranged at intervals outside the vacuum chamber, the driving shaft of the second driving member extends into the vacuum chamber and is connected to the second transmission member, a sleeve shaft is arranged outside the driving shaft of the second driving member, one end of the sleeve shaft is connected to the driving shaft of the third driving member through a synchronous pulley assembly, the other end of the sleeve shaft extends into the inner side of the vacuum chamber and is connected to a lever located in the vacuum chamber, and the lever is connected to the rotating shaft of the second bottom plate;
[0015] The sleeve is sleeved on the outer side of the sleeve shaft, and one end of the sleeve is sealed and fixedly connected to the side wall of the vacuum chamber;
[0016] The magnetic fluid sealing medium is arranged between the outer wall of the driving shaft of the second driving member and the inner wall of the sleeve shaft, and between the outer wall of the sleeve shaft and the inner wall of the sleeve, for sealing the gap.
[0017] As a preferred technical solution for the wafer surface processing device, the side wall of the vacuum chamber is provided with a transfer port, and the motion mechanism can also drive the clamping mechanism to receive and clamp the wafer from the transfer port and move the wafer to face the emission port.
[0018] As a preferred technical solution for the wafer surface processing device, the clamping mechanism includes a clamp and a mounting plate, a clamping position is provided on the mounting plate, the clamp is arranged in the circumference of the clamping position, and the first transmission member is connected to the mounting plate.
[0019] As an optimal technical solution for the wafer surface processing device, the clamp includes a limit assembly and a clamping member, the limit assembly includes at least two limit columns, and the clamping member includes a clamping column, which can be enclosed with the limit column to circumferentially clamp the wafer at the clamping position.
[0020] As an optimal technical solution for the wafer surface processing device, the clamping member includes a connecting member and an elastic member, the connecting member is rotatably connected to the mounting plate, the connecting member includes a first connecting rod and a second connecting rod arranged at an angle, the clamping column is arranged on the first connecting rod, the elastic member connects the mounting plate and the first connecting rod and is configured with a pulling force; a contact is provided on the second connecting rod.
[0021] As a preferred technical solution of the wafer surface processing device, the travel range of the motion mechanism includes driving the contact to press the side wall of the vacuum chamber, or driving the contact to press the fixed object on the side wall of the vacuum chamber, so that the elastic member is pulled and the clamping column moves away from the limit assembly;
[0022] And the contact is driven away from the side wall of the vacuum chamber, or the contact is driven away from the fixed object on the side wall of the vacuum chamber, so that the elastic member contracts and the clamping column moves toward the limiting assembly.
[0023] As a preferred technical solution for the wafer surface processing device, at least two limit assemblies are provided, at least two limit assemblies are arranged at different intervals from the clamping member, and the height of the limit assemblies close to the clamping member is lower than the height of the limit assemblies away from the clamping member.
[0024] The second object of the present invention is to provide a wafer surface processing method. To achieve this object, the present invention adopts the following technical solutions:
[0025] A wafer surface processing method, using any of the wafer surface processing devices described above, the wafer surface processing method comprising the following steps:
[0026] The clamping mechanism clamps the wafer;
[0027] The motion mechanism drives the clamping mechanism to move to face the emission port, and emits a beam to the vacuum chamber through the emission port;
[0028] The rotary drive module drives the clamping mechanism to rotate so that the wafer and the beam form a set angle;
[0029] The first linear drive module drives the wafer to move along a first direction at a first set speed; the second linear drive module drives the wafer to move along a second direction at a second set speed to bombard the surface of the wafer layer by layer.
[0030] As a preferred technical solution for the wafer surface processing method: the set angle is 70° to 120°.
[0031] As a preferred technical solution of the wafer surface processing method: the first set speed is 200 mm / s-500 mm / s, and the second set speed is 200 mm / s-500 mm / s.
[0032] As a preferred technical solution of the wafer surface processing method: the side wall of the vacuum chamber is provided with a transfer port, the clamping mechanism includes a clamp and a mounting plate, the mounting plate has a clamping position, the clamp includes a limit assembly and a clamping member, the clamping member includes a clamping column, a connecting member and an elastic member, the connecting member is rotatably connected to the mounting plate, the connecting member includes a first connecting rod and a second connecting rod arranged at an angle, the clamping column is arranged on the first connecting rod, the elastic member connects the mounting plate and the first connecting rod, and a contact is arranged on the second connecting rod; the specific steps of the clamping mechanism clamping the wafer include:
[0033] The first linear drive module drives the clamping mechanism to move toward the inlet. During the movement of the clamping mechanism toward the inlet, the contact on the second connecting rod presses the side wall of the vacuum chamber, or the contact presses a fixed object on the side wall of the vacuum chamber. As the clamping mechanism continues to move, the second connecting rod drives the first connecting rod to rotate, the elastic member is pulled, and the clamping column moves away from the clamping position. When the clamping mechanism moves to dock with the inlet, the end of the clamping position close to the inlet can receive the wafer.
[0034] placing the wafer in the clamping position;
[0035] The first linear drive module drives the clamping mechanism to move in a direction away from the entry port. During the movement of the clamping mechanism away from the entry port, the contact on the second connecting rod moves away from the side wall of the vacuum chamber, or the contact on the second connecting rod moves away from the fixed object on the side wall of the vacuum chamber, the elastic member contracts, the connecting member rotates in a direction close to the clamping position, the first connecting rod moves in a direction close to the clamping position, the clamping column gradually abuts against the outer periphery of the wafer and cooperates with the limiting assembly to clamp the wafer.
[0036] The beneficial effects of the present invention are:
[0037] The wafer surface processing device provided by the present invention can drive the second linear drive module to rotate by running the rotary drive module, thereby causing the first linear drive module to rotate in the vacuum chamber, so that the angle between the wafer and the beam changes. By running the first linear drive module, the height of the wafer in the vacuum chamber is adjusted so that the height of the wafer is consistent with the height of the emission port. By running the second linear drive module, the lateral position of the wafer can be adjusted so that the wafer can be opposite to the emission port, ensuring that the beam can hit the surface of the wafer. Controlling the first linear drive module and the second linear drive module can adjust different areas of the wafer relative to the emission port, thereby causing the beam to hit different areas of the wafer. Controlling the rotary drive module can cause the wafer to be opposite to the emission port at different angles, thereby causing the beam to hit the wafer in all directions, and achieving the flatness of the surface of the wafer to be hit to reach atomic level flatness, even if the flatness of the surface to be bonded of the wafer reaches atomic level flatness, so that the performance of the wafer is guaranteed. The overall structural design can meet the requirements of processing wafers in a vacuum environment. The vacuum degree in the vacuum chamber will not change significantly during the entire wafer processing process. The vacuum degree will not decrease due to too many mechanical structures and beams penetrating the vacuum chamber, nor will the vacuum chamber be contaminated by the introduction of atmosphere.
[0038] The wafer surface processing method provided by the present invention has simple steps, and the flatness of the wafer surface to be bonded after processing can reach atomic level flatness, meeting the use requirements. BRIEF DESCRIPTION OF THE DRAWINGS
[0039] Figure 1 It is a schematic diagram of a wafer surface processing device and wafer assembly provided by the present invention;
[0040] Figure 2 It is a partial structural schematic diagram of the wafer surface processing device provided by the present invention;
[0041] Figure 3 It is a partial structural schematic diagram of the clamping mechanism of the wafer surface processing device provided by the present invention;
[0042] Figure 4It is a schematic flow chart of the wafer surface processing method provided by the present invention.
[0043] In the figure:
[0044] 100. Wafer;
[0045] 1. Vacuum chamber;
[0046] 2. first linear drive module; 21. first drive member; 211. first main body; 212. first drive shaft; 22. first transmission member; 23. first bottom plate;
[0047] 3. Second linear drive module; 31. Second drive member; 311. Second body; 312. Second drive shaft; 32. Second bottom plate; 33. Sleeve shaft; 34. Push rod; 35. Sleeve;
[0048] 4. Rotation drive module; 41. Third drive member; 42. Rotation support bearing seat;
[0049] 5. Clamping mechanism; 51. Clamp; 511. Limiting assembly; 512. Clamping member; 5121. Clamping column; 5122. Connecting member; 51221. First connecting rod; 51222. Second connecting rod; 51223. Contact; 5123. Elastic member; 52. Mounting plate; 520. Clamping position;
[0050] 6. Synchronous pulley assembly. DETAILED DESCRIPTION
[0051] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.
[0052] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0053] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.
[0054] In the description of this embodiment, the terms "upper", "lower", "right", etc., directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.
[0055] Embodiment 1
[0056] like Figures 1 to 3As shown, this embodiment provides a wafer surface processing device, including a housing, a clamping mechanism 5 and a motion mechanism, wherein the side wall of the vacuum chamber 1 is provided with an emission port, and the beam can enter the vacuum chamber 1 from the emission port, wherein the beam is configured to bombard the surface of the wafer 100 to make the surface of the wafer 100 flat. The clamping mechanism 5 is arranged in the vacuum chamber 1, and is used to clamp the wafer 100 so that the wafer 100 is stably placed in the vacuum chamber 1. The motion mechanism is connected to the clamping mechanism 5, and is used to drive the clamping mechanism 5 to clamp the wafer 100 facing the emission port and drive the wafer 100 to move continuously, so that the beam continuously hits the surface of the wafer 100, so that the entire surface of the wafer 100 can be hit by the beam. Among them, the motion mechanism includes a first linear drive module 2, a second linear drive module 3 and a rotation drive module 4, the clamping mechanism 5 is connected to the first linear drive module 2, the first linear drive module 2 is used to drive the clamping mechanism 5 to move along the first direction, the first linear drive module 2 is connected to the second linear drive module 3, and the second linear drive module 3 is used to drive the first linear drive module 2 to move along the second direction. Since the clamping mechanism 5 is connected to the first linear drive module 2, when the second linear drive module 3 drives the first linear drive module 2 to move, the wafer 100 clamped by the clamping mechanism 5 will move along the second direction. The rotation drive module 4 is connected to the second linear drive module 3, and the rotation drive module 4 can drive the second linear drive module 3 to rotate, thereby changing the angle between the wafer 100 and the beam, so that the wafer 100 can be opposite to the beam at different angles, and the beam can hit the surface of the wafer 100 in all directions, so that the performance of the wafer 100 is guaranteed. In this embodiment, the first direction is the X direction, and the second direction is the Z direction. In this embodiment, the beam is a particle or energy beam, which includes an atomic beam.
[0057] Specifically, when the wafer 100 in the vacuum chamber 1 is not facing the side wall with the emission port, the staff needs to first operate the rotary drive module 4 to make the wafer 100 face the side wall with the emission port, then operate the first linear drive module 2 to make the wafer 100 consistent with the height of the emission port, and operate the second linear drive module 3 to make the wafer 100 face the emission port, at which time the beam can hit the surface of the wafer 100. Then, according to the situation of the wafer 100 being hit, operate the first linear drive module 2, the second linear drive module 3 and the rotary drive module 4 to adjust the position of the wafer 100 in the vacuum chamber 1, so that the beam can hit different areas on the surface of the wafer 100, thereby achieving all-round bombardment of the wafer 100. When the wafer 100 in the vacuum chamber 1 is opposite to the side wall with the launch port, the staff only needs to move the first linear drive module 2 and the second linear drive module 3, adjust the position of the wafer 100 so that it is first opposite to the launch port, and then operate the first linear drive module 2, the second linear drive module 3 and the rotation drive module 4 according to the situation of the wafer 100 being hit.
[0058] The wafer surface processing device provided in this embodiment can drive the second linear drive module 3 to rotate by running the rotary drive module 4, thereby rotating the first linear drive module 2 in the vacuum chamber 1, so that the angle between the wafer 100 and the beam changes. By running the first linear drive module 2, the height of the wafer 100 in the vacuum chamber 1 is adjusted to make the height of the wafer 100 consistent with the height of the emission port. By running the second linear drive module 3, the lateral position of the wafer 100 can be adjusted so that the wafer 100 can be opposite to the emission port, ensuring that the beam can hit the surface of the wafer 100. By controlling the first linear drive module 2 and the second linear drive module 3, it is possible to adjust different areas of the wafer 100 relative to the emission port, so that the beam can hit different areas of the wafer 100. By controlling the rotary drive module 4, the wafer 100 can be relative to the emission port at different angles, so that the beam can hit the wafer 100 in all directions, and the flatness of the surface of the wafer 100 to be hit can reach atomic level flatness, so that the performance of the wafer 100 is guaranteed.
[0059] Exemplarily, the first linear drive module 2 includes a first drive member 21 and a first transmission member 22, the first drive member 21 is connected to the first transmission member 22, and is used to drive the first transmission member 22 to move along the first direction, wherein the clamping mechanism 5 is connected to the first transmission member 22, so when the first drive member 21 drives the first transmission member 22 to move along the first direction, it will drive the clamping mechanism 5 to move along the first direction, so that the wafer 100 moves along the first direction. Specifically, the first drive member 21 includes a first body 211 and a first drive shaft 212, the first transmission member 22 is in transmission connection with the first drive shaft 212, and the clamping mechanism 5 is connected to the first transmission member 22, when the first body 211 drives the first drive shaft 212 to rotate, the first transmission member 22 moves along the first drive shaft 212, and then the clamping mechanism 5 moves along the first drive shaft 212, wherein the first drive shaft 212 is arranged along the first direction, so that the first linear drive module 2 can drive the clamping mechanism 5 to move along the first direction. Specifically, the first body 211 can use a motor with low heat generation and relatively little pollution to the vacuum chamber 1. Regarding the type of motor, a stepper motor or a servo motor can be used, and no specific limitation is made here. The first drive shaft 212 can use a screw, and the first transmission member 22 is threadedly connected to the first drive shaft 212.
[0060] Exemplarily, the second linear drive module 3 includes a second drive member 31 and a second transmission member, the second drive member 31 is connected to the second transmission member, and is used to drive the second transmission member to move along the second direction, the first linear drive module 2 also includes a first base plate 23, the first drive member 21 and the first transmission member 22 are both arranged on the first base plate 23, and the second transmission member is connected to the first base plate 23. In this way, when the second drive member 31 is running, the first base plate 23 will move along the second direction with the second transmission member, thereby causing the first drive member 21 and the first transmission member 22 on the first base plate 23 to move along the second direction, and the clamping mechanism 5 is connected to the first transmission member 22, so that when the second drive member 31 is running, the wafer 100 can move along the second direction. Specifically, the second driving member 31 includes a second main body 311 and a second driving shaft 312, and the second transmission member is connected to the second driving shaft 312 in a transmission manner. When the second main body 311 is running, the second driving shaft 312 will be driven to rotate, and the second transmission member will move along the second driving shaft 312, and at this time, the first base plate 23 will be driven to move in the second direction. The first driving member 21 and the first transmission member 22 are both placed on the first base plate 23, that is, when the second driving member 31 is running, the first linear drive module 2 will be moved in the second direction, and then the wafer 100 clamped by the clamping mechanism 5 will be moved in the second direction. In this embodiment, the second main body 311 can be a motor, and the second driving shaft 312 can be a screw. The second driving shaft 312 is threadedly connected to the second transmission member.
[0061] Exemplarily, the rotary drive module 4 includes a third drive member 41 and a rotary support bearing seat 42, the second linear drive module 3 also includes a second base plate 32, the first base plate 23 is overlapped on the second base plate 32, and the second base plate 32 is rotatably arranged between the two rotary support bearing seats 42, and the third drive member 41 is transmission connected to the second base plate 32 for driving the second base plate 32 to rotate. When the third driving member 41 is running, the second base plate 32 will rotate relative to the two rotating support bearing seats 42, and the second base plate 32 will drive the first base plate 23 to rotate. Since the first base plate 23 is connected to the second transmission member, and the second transmission member is threadedly connected to the second driving shaft 312, when the second base plate 32 rotates, the first base plate 23 will rotate relatively. At this time, the second transmission member rotates relative to the second screw rod. At the same time, the first driving member 21 and the first transmission member 22 are both arranged on the first base plate 23. Therefore, the rotation of the second base plate 32 will drive the first linear drive module 2 to rotate, thereby rotating the clamping mechanism 5, and at the same time, the second transmission member rotates relative to the second driving shaft 312, so as to adjust the angle between the wafer 100 and the launch port. Specifically, the third driving member 41 is a driving motor.
[0062] Furthermore, the second driving member 31 and the third driving member 41 are arranged at intervals on the outside of the vacuum chamber 1. On the one hand, when adjusting the wafer 100 to face the emission port and to move continuously, not only can the beam hit different areas on the surface of the wafer 100, but also the space of the vacuum chamber 1 can be reduced, and the overall cost of the wafer surface processing device can be reduced. On the other hand, the second driving member 31 and the third driving member 41 are placed outside the vacuum chamber 1, which can avoid the second driving member 31 and the third driving member 41 from affecting the vacuum environment in the vacuum chamber 1 when they are in operation, and further ensure the processing quality of the wafer 100. Among them, the driving shaft of the second driving member 31 extends into the vacuum chamber 1 and is connected to the second transmission member, so that the second transmission member can be driven to move in the second direction, and then the second transmission member drives the first linear drive module 2 to move in the second direction, so as to drive the wafer 100 to move in the second direction. A sleeve shaft 33 is provided on the outer sleeve of the driving shaft of the second driving member 31, one end of the sleeve shaft 33 is connected to the driving shaft of the third driving member 41 through a synchronous pulley assembly 6, and the other end of the sleeve shaft 33 extends into the vacuum chamber 1 and is connected to a lever 34 located in the vacuum chamber 1, and the lever 34 is connected to the rotating shaft of the second bottom plate 32. When the third driving member 41 is in operation, the lever 34 is driven to rotate through the synchronous pulley assembly 6, and the lever 34 drives the second bottom plate 32 to rotate on the two rotating support bearing seats 42, the first linear driving module 2 rotates, and at the same time, the second transmission member rotates relative to the second driving shaft 312, so as to adjust the angle between the wafer 100 and the side wall of the vacuum chamber 1 with the launch port.
[0063] Furthermore, a sleeve 35 is sleeved on the outer side of the sleeve 33, and one end of the sleeve 35 is sealed and fixedly connected to the side wall of the vacuum chamber 1, wherein the length of the sleeve 33 is greater than the length of the sleeve 35, that is, a part of the sleeve 33 extends out of the sleeve 35, so as to ensure that the third driving member 41 can drive the sleeve 33 to rotate through the synchronous pulley assembly 6, so that the second bottom plate 32 rotates between the two rotating support bearing seats 42. In this embodiment, the second body 311 in the second driving member 31 is placed outside the vacuum chamber 1, and the second driving shaft 312 passes through the sleeve 33 and extends into the vacuum chamber 1 and is threadedly connected with the second transmission member. When the third driving member 41 drives the sleeve 33 to rotate and then rotates the second bottom plate 32, the second driving member 31 is in a stationary state, thereby improving the rationality of the design of the wafer surface processing device.
[0064] Furthermore, a magnetic fluid sealing medium is provided between the outer wall of the driving shaft of the second driving member 31 and the inner wall of the sleeve shaft 33, and between the outer wall of the sleeve shaft 33 and the inner wall of the sleeve 35, for blocking the gap. That is, by providing a magnetic fluid sealing medium, the gap between the second driving shaft 312 and the sleeve shaft 33, and the gap between the sleeve shaft 33 and the sleeve 35 is blocked, so that the vacuum state of the vacuum chamber 1 is guaranteed, and the flatness of the surface of the wafer 100 after being struck is further improved. Among them, the magnetic fluid medium is a magnetic liquid that has both the fluidity of a liquid and the magnetism of a solid magnetic material. The magnetic fluid medium is a stable colloidal liquid formed by a mixture of magnetic solid particles with a diameter of nanometers (less than 10 nanometers), a base carrier liquid and a surfactant, and is widely used in various fields such as magnetic fluid sealing under harsh conditions. The magnetic fluid medium is a medium commonly used for sealing in the field of wafer 100 processing, and does not belong to the key protection content of the present invention. It is also understandable that permanent magnets for generating magnetic fields are also included between the second drive shaft 312 and the sleeve shaft 33 , and between the sleeve shaft 33 and the sleeve 35 , so as to control the distribution of the magnetic fluid medium through the magnetic field.
[0065] In this embodiment, a transfer port is further provided on the side wall of the vacuum chamber 1, and the wafer 100 enters the interior of the vacuum chamber 1 through the transfer port. The motion mechanism can also drive the clamping mechanism 5 to receive and clamp the wafer 100 from the transfer port, and move the wafer 100 to the launch port position so that the wafer 100 is opposite to the launch port, so that after the wafer 100 enters the interior of the vacuum chamber 1 through the transfer port, the clamping mechanism 5 can automatically clamp the wafer 100.
[0066] Exemplarily, the clamping mechanism 5 includes a clamp 51 and a mounting plate 52, a clamping position 520 is provided on the mounting plate 52, and the clamp 51 is arranged in the circumference of the clamping position 520 to clamp and fix the wafer 100 at the clamping position 520. The first transmission member 22 is connected to the mounting plate 52, so that when the first driving member 21 drives the first transmission member 22 to move along the first direction, the clamping mechanism 5 is driven to move along the first direction. Among them, the clamp 51 includes a limit assembly 511 and a clamping member 512, the limit assembly 511 includes at least two limit columns, and the clamping member 512 includes a clamping column 5121, and the clamping column 5121 can be enclosed with the limit column in the circumference of the clamping position 520 to clamp the wafer 100, that is, the wafer 100 is clamped and fixed by the limit column and the clamping column 5121. Specifically, the clamping member 512 includes a connecting member 5122 and an elastic member 5123. The connecting member 5122 is rotatably connected to the mounting plate 52. The connecting member 5122 includes a first connecting rod 51221 and a second connecting rod 51222 which are arranged at an angle. The clamping column 5121 is arranged on the first connecting rod 51221. The elastic member 5123 connects the mounting plate 52 and the first connecting rod 51221 and is configured with a pulling force. A contact 51223 is provided on the second connecting rod 51222.
[0067] When the second connecting rod 51222 is subjected to external force, the connecting member 5122 will rotate relative to the mounting plate 52, and the first connecting rod 51221 will rotate in the direction away from the mounting plate 52. After the wafer 100 enters the vacuum chamber 1 through the transmission port, it will be transmitted to the clamping position 520 and abut against the limiting column. Then, the external force on the second connecting rod 51222 will be removed. Under the action of the elastic member 5123, the connecting member 5122 will be reset, and the clamping column 5121 and the limiting column will clamp the circumferential surface of the wafer 100, so that the clamping column 5121 and the limiting column can clamp and fix the wafer 100 at the clamping position 520.
[0068] The travel range of the motion mechanism includes the driving contact 51223 squeezing the side wall of the vacuum chamber 1, or the driving contact 51223 squeezing the fixed object on the side wall of the vacuum chamber 1, so that the elastic member 5123 is pulled, and the clamping column 5121 moves away from the limit assembly 511, at which time the wafer 100 can be transferred to the clamping position 520 and abut against the limit assembly. At the same time, the travel range of the motion mechanism also includes the driving contact 51223 away from the side wall of the vacuum chamber 1, or the driving contact 51223 away from the fixed object on the side wall of the vacuum chamber 1, so that the elastic member 5123 contracts and the clamping column 5121 moves toward the limit assembly 511. In this embodiment, the elastic member 5123 can be a coil spring.
[0069] By running the rotary drive module 4, the angle of the clamping mechanism 5 in the vacuum chamber 1 can be adjusted so that the circumference of the clamping mechanism 5 is opposite to the side wall with the transfer port. By running the second linear drive module 3, the lateral position of the first linear drive module 2 is adjusted so that the clamping mechanism 5 is opposite to the transfer port. Then, the first linear drive module 2 is run to make the clamping mechanism 5 approach the transfer port. As the clamping mechanism 5 moves, the contact 51223 of the second connecting rod 51222 will abut against the side wall of the vacuum chamber 1. The contact 51223 is a circular rotating wheel. As the clamping mechanism 5 continues to approach the side wall, the connecting piece 5122 will rotate relative to the mounting plate 52, so that the clamping column 5121 moves away from the clamping assembly, and the wafer 100 can smoothly enter the clamping position 520 and abut against the limiting column. Alternatively, a fixed object is provided on the side wall of the vacuum chamber 1 where a transfer port is provided, and the fixed object is placed on one side of the transfer port. The rotary drive module 4 and the second linear drive module 3 are controlled to make the clamping mechanism 5 opposite to the transfer port. Then the first linear drive module 2 is operated, and the clamping mechanism 5 gradually approaches the side wall of the vacuum chamber 1. The second connecting rod 51222 will abut against the fixed object provided on the side wall of the vacuum chamber 1. As the clamping mechanism 5 continues to move, the fixed object becomes the fulcrum of the second connecting rod 51222. The second connecting rod 51222 will rotate relative to the fixed object, and the first connecting rod 51221 will rotate in a direction away from the limiting assembly 511, that is, the clamping column 5121 moves in a direction away from the limiting assembly 511. After entering the vacuum chamber 1 from the transfer port, the wafer 100 can smoothly abut against the limiting column.
[0070] When the wafer 100 enters the vacuum chamber 1 from the inlet and contacts the limiting column, the first linear drive module 2 can be controlled to move the clamping mechanism 5 in the direction away from the inlet. At this time, the second connecting rod 51222 is away from the side wall of the vacuum chamber 1 or the fixed object on the side wall of the vacuum chamber 1, and the external force on the second connecting rod 51222 is cancelled, and the elastic member 5123 contracts. At this time, the connecting member 5122 is reset, and the clamping column 5121 moves toward the limiting assembly 511. The clamping member 512 and the limiting column jointly clamp and fix the wafer 100. By controlling the clamping mechanism 5 to approach or move away from the inlet, the connecting member 5122 in the clamping mechanism 5 can be controlled to rotate, and the clamping column 5121 can be controlled to move away from or approach the limiting assembly 511, so that the clamping mechanism 5 can automatically clamp the wafer 100 when the wafer 100 enters the vacuum chamber 1. In this embodiment, the elastic member 5123 can be a spring.
[0071] Preferably, at least two limit assemblies 511 are provided, and at least two limit assemblies 511 are provided at different intervals from the clamping member 512, and the height of the limit assemblies 511 close to the clamping member 512 is lower than the height of the limit assemblies 511 far from the clamping member 512. In this way, the two limit assemblies 511 and the clamping column 5121 can clamp the wafer 100 of the first specification and the wafer 100 of the second specification with different areas. The area of the wafer 100 of the second specification is larger than the area of the wafer 100 of the first specification. For the wafer 100 of the first specification, it can be clamped and fixed by the limit assemblies 511 and the clamping column 5121 that are relatively closer to the clamping member 512, and for the wafer 100 of the second specification, it can be clamped and fixed by the limit assemblies 511 and the clamping column 5121 that are relatively farther from the clamping member 512. The two limit assemblies 511 are set to different heights according to the distance from the clamping member 512, and the height can be adjusted before the wafer 100 of the second specification enters the vacuum chamber 1, so as to avoid the limit assemblies 511 close to the clamping column 5121 affecting the entry path of the wafer 100 of the second specification, so that the two limit assemblies 511 can smoothly clamp the two wafers 100 of different specifications. By setting at least two limit assemblies 511, the clamping mechanism 5 can clamp the wafer 100 of the first specification and the wafer 100 of the second specification with different fixed areas, further improving the versatility of the clamping mechanism 5 and improving the rationality of the design of the wafer surface processing device.
[0072] Preferably, a plurality of support columns are provided at the clamping position 520 of the mounting plate 52. When the limiting assembly 511 and the clamping column 5121 clamp and fix the wafer 100, the support columns can provide certain support to the wafer 100, thereby preventing the wafer 100 from deforming during the clamping process and affecting the degree of impact of the beam on the wafer 100, thereby ensuring the flatness of the wafer 100 after being hit.
[0073] Embodiment 2
[0074] like Figure 4 As shown in , this embodiment provides a wafer surface processing method, using the wafer surface processing device in embodiment 1 to process the wafer 100, wherein the wafer surface processing method includes the following steps:
[0075] The clamping mechanism 5 clamps the wafer 100 ; the clamping mechanism 5 is used to clamp and fix the wafer 100 .
[0076] The motion mechanism drives the clamping mechanism 5 to move to face the emission port, and the emission port emits a beam; the wafer 100 faces the emission port at this time, and the beam can accurately hit the surface of the wafer 100.
[0077] The rotation drive module 4 drives the clamping mechanism 5 to rotate so that the wafer 100 and the beam are at a predetermined angle; by controlling the rotation drive module 4, the angle between the wafer 100 and the emission port can be controlled, and the beam can bombard the wafer 100 when the wafer 100 is at different angles, thereby improving the comprehensiveness of the impact on the wafer 100. Preferably, the predetermined angle is 70° to 120°
[0078] The first linear drive module 2 drives the wafer 100 to move along the first direction at a first preset speed, and the second linear drive module 3 drives the wafer 100 to move along the second direction at a second preset speed, bombarding the surface of the wafer 100 layer by layer. The operation of the first linear drive module 2 and the second linear drive module 3 can adjust the relative position of the wafer 100 and the launch port, so that different areas of the wafer 100 are opposite to the launch port in turn, so that the beam can hit different positions of the wafer 100, and bombard the surface of the wafer 100 layer by layer. Preferably, the first preset speed is 200 mm / s-500mm / s, and the second preset speed is 200 mm / s-500mm / s. If the wafer 100 moves too fast, it will affect the effect of the beam hitting the surface of the wafer 100, and affect the flatness of the surface of the wafer 100 after processing. If the wafer 100 moves too slowly, it will affect the efficiency of the surface processing of the wafer 100. The first predetermined speed and the second predetermined speed need to be set according to the area of the wafer 100 and the speed of beam emission, and no specific limitation is made here.
[0079] In this embodiment, a transfer port is provided on the side wall of the vacuum chamber 1, the clamping mechanism 5 includes a clamp 51 and a mounting plate 52, the mounting plate 52 has a clamping position 520, the clamp 51 includes a limit assembly 511 and a clamping member 512, the clamping member 512 includes a clamping column 5121, a connecting member 5122 and an elastic member 5123, the connecting member 5122 is rotatably connected to the mounting plate 52, the connection includes a first connecting rod 51221 and a second connecting rod 51222 arranged at an angle, the clamping column 5121 is arranged on the first connecting rod 51221, the elastic member 5123 connects the mounting plate 52 and the first connecting rod 51221, and a contact 51223 is arranged on the second connecting rod 51222, wherein the specific steps of the clamping mechanism 5 clamping the wafer 100 include:
[0080] The first linear drive module 2 drives the clamping mechanism 5 to move toward the transfer port. During the movement of the clamping mechanism 5 toward the transfer port, the contact 51223 on the second connecting rod 51222 squeezes the side wall of the vacuum chamber 1, or the contact 51223 squeezes the fixed object on the side wall of the vacuum chamber 1. As the clamping mechanism 5 continues to move, the second connecting rod 51222 drives the first connecting rod 51221 to rotate, the elastic member 5123 is pulled, and the clamping column 5121 moves away from the clamping position 520. When the clamping mechanism 5 moves to dock with the transfer port, the end of the clamping position 520 close to the transfer port can receive the wafer 100. When the contact 51223 on the second connecting rod 51222 abuts against the side wall of the vacuum chamber 1, as the clamping mechanism 5 continues to move toward the transfer port, the contact 51223 will move along the side wall of the vacuum chamber 1, and the second connecting rod 51222 will be subjected to an external force, causing the connecting member 5122 to rotate relative to the mounting plate 52. At this time, the first connecting rod 51221 moves away from the clamping position 520, and the elastic member 5123 stretches so that the wafer 100 entering the vacuum chamber 1 from the transfer port can be transferred to the clamping position 520. Alternatively, when the contact 51223 on the second connecting rod 51222 abuts against the fixed object on the side wall of the vacuum chamber 1, as the clamping mechanism 5 continues to move toward the transmission port, the point where the contact 51223 on the second connecting rod 51222 abuts against the fixed object will form a fulcrum, and the second connecting rod 51222 will rotate along the fulcrum, thereby driving the first connecting rod 51221 to rotate in a direction away from the clamping position 520, so that the clamping column 5121 is away from the clamping position 520.
[0081] The wafer 100 is placed at the clamping position 520 . The transfer mechanism outside the vacuum chamber 1 for picking up the wafer 100 transfers the wafer 100 from the transfer port into the vacuum chamber 1 . As the wafer 100 enters the vacuum chamber 1 , it is transferred to the clamping position 520 .
[0082] The first linear drive module 2 drives the clamping mechanism 5 to move in the direction away from the transmission port. In the process of the clamping mechanism 5 moving away from the transmission port, the contact 51223 on the second connecting rod 51222 moves away from the side wall of the vacuum chamber 1, or the contact 51223 on the second connecting rod 51222 moves away from the fixed object on the side wall of the vacuum chamber 1, the elastic member 5123 contracts, the connecting member 5122 rotates in the direction close to the clamping position 520, the first connecting rod 51221 moves in the direction close to the clamping position 520, and the clamping column 5121 abuts against the outer periphery of the wafer 100 and clamps the wafer 100 together with the limiting column.
[0083] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, various obvious changes, readjustments and substitutions can be made without departing from the protection scope of the present invention. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.
Claims
1. A wafer surface processing device, characterized in that: include: A vacuum chamber (1), wherein a side wall of the vacuum chamber (1) is provided with an emission port, and a beam can enter the vacuum chamber (1) from the emission port; A clamping mechanism (5), disposed in the vacuum chamber (1) and used for clamping a wafer (100); A motion mechanism connected to the clamping mechanism (5) and used for driving the wafer (100) clamped by the clamping mechanism (5) to face the emission port and drive the wafer (100) to move continuously, so that the beam continuously strikes the surface of the wafer (100); the motion mechanism comprises a first linear drive module (2), a second linear drive module (3) and a rotation drive module (4); the clamping mechanism (5) is connected to the first linear drive module (2), the first linear drive module (2) is used for driving the clamping mechanism (5) to move along a first direction; the first linear drive module (2) is connected to the second linear drive module (3), the second linear drive module (3) is used for driving the first linear drive module (2) to move along a second direction; the rotation drive module (4) can drive the second linear drive module (3) to rotate, and can change the angle between the wafer (100) and the beam.
2. The wafer surface processing device according to claim 1, characterized in that: The first linear drive module (2) comprises a first drive member (21) and a first transmission member (22); the first drive member (21) is connected to the first transmission member (22) and is used to drive the first transmission member (22) to move along the first direction; and the clamping mechanism (5) is connected to the first transmission member (22).
3. The wafer surface processing device according to claim 2, characterized in that: The second linear drive module (3) comprises a second drive member (31) and a second transmission member, wherein the second drive member (31) is connected to the second transmission member and is used to drive the second transmission member to move along the second direction; The first linear drive module (2) further comprises a first base plate (23), the first drive member (21) and the first transmission member (22) are both arranged on the first base plate (23), and the second transmission member is connected to the first base plate (23).
4. The wafer surface processing device according to claim 3, characterized in that: The rotary drive module (4) comprises a third drive member (41) and a rotary support bearing seat (42); the second linear drive module (3) further comprises a second base plate (32); the first base plate (23) is overlapped on the second base plate (32); the second base plate (32) is rotatably arranged between the two rotary support bearing seats (42); the third drive member (41) is transmission-connected to the second base plate (32) for driving the second base plate (32) to rotate.
5. The wafer surface processing device according to claim 4, characterized in that: The second driving member (31) and the third driving member (41) are arranged at intervals outside the vacuum chamber (1); the driving shaft of the second driving member (31) extends into the vacuum chamber (1) and is connected to the second transmission member; a sleeve shaft (33) is provided outside the driving shaft of the second driving member (31); one end of the sleeve shaft (33) is connected to the driving shaft of the third driving member (41) via a synchronous pulley assembly (6); the other end of the sleeve shaft (33) extends into the inside of the vacuum chamber (1) and is connected to a lever (34) located inside the vacuum chamber (1); and the lever (34) is connected to a rotating shaft of the second bottom plate (32); The sleeve (35) is sleeved on the outside of the sleeve shaft (33), and one end of the sleeve (35) is sealed and fixedly connected to the side wall of the vacuum chamber (1); A magnetic fluid sealing medium is provided between the outer wall of the drive shaft of the second drive member (31) and the inner wall of the sleeve shaft (33), and between the outer wall of the sleeve shaft (33) and the inner wall of the sleeve (35), and is used to seal the gap.
6. The wafer surface processing device according to any one of claims 1 to 5, characterized in that: The side wall of the vacuum chamber (1) is provided with an inlet, and the motion mechanism can also drive the clamping mechanism (5) to receive and clamp the wafer (100) from the inlet, and move the wafer (100) to face the emission port.
7. The wafer surface processing device according to claim 2, characterized in that: The clamping mechanism (5) comprises a clamp (51) and a mounting plate (52); a clamping position (520) is provided on the mounting plate (52); the clamp (51) is arranged in the circumferential direction of the clamping position (520); and the first transmission member (22) is connected to the mounting plate (52).
8. The wafer surface processing device according to claim 7, characterized in that: The clamp (51) comprises a limiting assembly (511) and a clamping member (512), wherein the limiting assembly (511) comprises at least two limiting columns, and the clamping member (512) comprises a clamping column (5121), wherein the clamping column (5121) can be enclosed with the limiting column in the circumferential direction of the clamping position (520) to clamp the wafer (100).
9. The wafer surface processing device according to claim 8, characterized in that: The clamping member (512) comprises a connecting member (5122) and an elastic member (5123); the connecting member (5122) is rotatably connected to the mounting plate (52); the connecting member (5122) comprises a first connecting rod (51221) and a second connecting rod (51222) which are arranged at an angle; the clamping column (5121) is arranged on the first connecting rod (51221); the elastic member (5123) connects the mounting plate (52) and the first connecting rod (51221) and is provided with a pulling force; and a contact (51223) is provided on the second connecting rod (51222).
10. The wafer surface processing device according to claim 9, characterized in that: The travel range of the motion mechanism includes driving the contact (51223) to squeeze the side wall of the vacuum chamber (1), or driving the contact (51223) to squeeze a fixed object on the side wall of the vacuum chamber (1), so that the elastic member (5123) is pulled, and the clamping column (5121) moves away from the limiting assembly (511); And driving the contact (51223) away from the side wall of the vacuum chamber (1), or driving the contact (51223) away from a fixed object on the side wall of the vacuum chamber (1), so that the elastic member (5123) contracts and the clamping column (5121) moves toward the limiting assembly (511).
11. The wafer surface processing device according to claim 8, characterized in that: At least two of the limiting components (511) are provided, and the at least two limiting components (511) are arranged at different intervals from the clamping member (512), and the height of the limiting component (511) close to the clamping member (512) is lower than the height of the limiting component (511) far from the clamping member (512).
12. A wafer surface processing method, characterized in that: Using the wafer surface processing device as described in any one of claims 1 to 11, the wafer surface processing method comprises the following steps: The clamping mechanism (5) clamps the wafer (100); The motion mechanism drives the clamping mechanism (5) to move to face the emission port, and emits a beam to the vacuum chamber (1) through the emission port; The rotary drive module (4) drives the clamping mechanism (5) to rotate so that the wafer (100) and the beam form a set angle; The first linear drive module (2) drives the wafer (100) to move along a first direction at a first set speed; the second linear drive module (3) drives the wafer (100) to move along a second direction at a second set speed, bombarding the surface of the wafer (100) layer by layer.
13. The wafer surface processing method according to claim 12, characterized in that: The set angle is 70° to 120°.
14. The wafer surface processing method according to claim 12, characterized in that: The first set speed is 200 mm / s-500 mm / s, and the second set speed is 200 mm / s-500 mm / s.
15. The wafer surface processing method according to claim 12, characterized in that: The side wall of the vacuum chamber (1) is provided with a transfer port, the clamping mechanism (5) comprises a clamp (51) and a mounting plate (52), the mounting plate (52) has a clamping position (520), the clamp (51) comprises a limit assembly (511) and a clamping member (512), the clamping member (512) comprises a clamping column (5121), a connecting member (5122) and an elastic member (5123), the connecting member (5122) is rotatably connected to the mounting plate (52) The connecting member (5122) comprises a first connecting rod (51221) and a second connecting rod (51222) which are arranged at an angle, the clamping column (5121) is arranged on the first connecting rod (51221), the elastic member (5123) connects the mounting plate (52) and the first connecting rod (51221), and the second connecting rod (51222) is provided with a contact (51223); the specific steps of clamping the wafer (100) by the clamping mechanism (5) include: The first linear drive module (2) drives the clamping mechanism (5) to move in a direction close to the entry port. During the movement of the clamping mechanism (5) close to the entry port, the contact (51223) on the second connecting rod (51222) presses the side wall of the vacuum chamber (1), or the contact (51223) presses a fixed object on the side wall of the vacuum chamber (1). As the clamping mechanism (5) continues to move, the second connecting rod (51222) drives the first connecting rod (51221) to rotate, the elastic member (5123) is pulled, and the clamping column (5121) moves in a direction away from the clamping position (520). When the clamping mechanism (5) moves to dock with the entry port, the end of the clamping position (520) close to the entry port can receive the wafer (100). Placing the wafer (100) in the clamping position (520); The first linear drive module (2) drives the clamping mechanism (5) to move in a direction away from the entry port. During the movement of the clamping mechanism (5) away from the entry port, the contact (51223) on the second connecting rod (51222) moves away from the side wall of the vacuum chamber (1), or the contact (51223) on the second connecting rod (51222) moves away from a fixed object on the side wall of the vacuum chamber (1), the elastic member (5123) contracts, the connecting member (5122) rotates in a direction approaching the clamping position (520), the first connecting rod (51221) moves in a direction approaching the clamping position (520), and the clamping column (5121) gradually abuts against the outer periphery of the wafer (100) and cooperates with the limiting assembly (511) to clamp the wafer (100).
Citation Information
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