Hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line

Abstract

This invention provides a hybrid structure based on substrate integrated waveguides and substrate integrated coaxial lines, comprising a substrate integrated coaxial line structure and a substrate integrated waveguide structure. The substrate integrated coaxial line structure and the substrate integrated waveguide structure are arranged horizontally side-by-side or stacked vertically, sharing an outer conductor. The substrate integrated waveguide structure exhibits low-loss characteristics at high frequencies, making it suitable for high-frequency signal transmission in TE10 mode; while the substrate integrated coaxial line structure supports low-frequency TEM mode transmission, suitable for baseband signals. The hybrid structure provided by this invention can provide high-quality transmission paths in different frequency bands, improving system efficiency and the applicable frequency range.

Description

Technical Field

[0001] This invention relates to the field of high-speed data transmission interconnect technology at the chip level, and more specifically, to a hybrid structure based on substrate integrated waveguides and substrate integrated coaxial lines. Background Technology

[0002] With the rapid advancement of information technology, the demand for terabit-level data transmission rates is becoming increasingly urgent. To meet this demand, high-speed electrical interconnect technology has become a key component in building high-performance systems. However, traditional interconnect structures (such as microstrip lines, striplines, and coplanar waveguides) typically employ quasi-TEM (transverse electromagnetic wave) or TEM modes. While suitable for baseband signal transmission at gigabit and below rates, their performance gradually becomes limited at higher frequencies.

[0003] Specifically, traditional interconnect structures offer relatively ideal transmission performance at low frequencies; however, as the frequency increases, their open physical design leads to a significant increase in conductor and dielectric losses, severely limiting signal transmission distance and speed. Furthermore, high-speed transmission environments also experience crosstalk, delay, signal distortion, and inter-symbol interference (ISI), which not only weaken signal integrity but also trigger severe electromagnetic interference (EMI).

[0004] To address these challenges, researchers have proposed methods such as serial links, equalization techniques, and pre-emphasis to improve crosstalk and extend bandwidth. While these measures alleviate the performance bottleneck of traditional electrical interconnects in high-frequency environments to some extent, they cannot completely eliminate EMI problems and increase system complexity and cost. Therefore, traditional electrical interconnect technologies are becoming increasingly inadequate to meet future high data rate demands.

[0005] A search revealed a patent with publication number CN105226360A, which discloses a substrate-integrated coaxial waveguide interconnect array structure, including at least one single-channel structure. An inner conductor is disposed between a first outer conductor layer and a second outer conductor layer; a first dielectric layer is disposed between the first outer conductor layer and the inner conductor; a second dielectric layer is disposed between the inner conductor and the second outer conductor layer; and a metallized via array extends longitudinally. The first outer conductor layer, the second outer conductor layer, and the metallized via array constitute the outer conductor. Multiple single-channel structures form arrays in the horizontal and vertical directions, sharing the outer conductor. Adjacent single-channel structures in the vertical direction share the same outer conductor layer. Adjacent single-channel structures in the horizontal direction share the same column of the metallized via array. This patent still requires further improvement in high-frequency and low-frequency signal transmission performance. Summary of the Invention

[0006] In view of the shortcomings of the prior art, the purpose of this invention is to provide a hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line.

[0007] This invention provides a hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line, including a substrate integrated coaxial line structure and a substrate integrated waveguide structure; the substrate integrated coaxial line structure and the substrate integrated waveguide structure are arranged horizontally side by side or stacked vertically; the substrate integrated coaxial line structure and the substrate integrated waveguide structure share an outer conductor.

[0008] Optionally, the substrate integrated waveguide structure includes, from top to bottom, a first upper metal layer, a first dielectric layer, and a first lower metal layer. A first metallized via array is embedded in the first dielectric layer. The first metallized via array is divided into two columns and connected to the first upper metal layer and the first lower metal layer. The substrate integrated waveguide structure forms an effective waveguide boundary through the first metallized via array, the first upper metal layer, and the first lower metal layer.

[0009] Optionally, the substrate integrated coaxial cable structure includes, from top to bottom, a second upper metal layer, a second dielectric layer, an inner conductor, and a second lower metal layer. A second metallized via array is embedded in the second dielectric layer. The second metallized via array is divided into two columns and connected to the second upper metal layer and the second lower metal layer. The inner conductor is located between the two columns of the second metallized via array. The inner conductor is used to transmit transverse electromagnetic wave modes and is suitable for the transmission of low-frequency signals.

[0010] Optionally, the substrate-integrated waveguide structure and the substrate-integrated coaxial line structure are placed side by side on the same dielectric layer and share a metallized via array on one side.

[0011] Optionally, the substrate integrated coaxial line structure is placed above the substrate integrated waveguide structure, and the two share the first upper metal layer above the substrate integrated waveguide structure. That is, the first upper metal layer of the substrate integrated waveguide structure is also the second lower metal layer of the substrate integrated coaxial line structure.

[0012] Optionally, the substrate integrated waveguide structure is placed on the substrate integrated coaxial line structure, and the two share the second upper metal layer above the substrate integrated coaxial line structure. That is, the second upper metal layer of the substrate integrated coaxial line structure is also the first lower metal layer of the substrate integrated waveguide structure.

[0013] Optionally, the metallized vias in the first and second metallized via arrays are arranged at equal intervals along the length of the physical structure.

[0014] Optionally, the operating frequency band of the substrate-integrated coaxial cable structure ranges from DC to the cutoff frequency f1.

[0015] Optionally, the operating frequency band of the substrate integrated waveguide structure ranges from the cutoff frequency f1 to the cutoff frequency f2, and the cutoff frequency f2 is twice the cutoff frequency f1.

[0016] Furthermore, the hybrid structure transmits signals using TEM mode at low frequencies and TE10 mode at high frequencies.

[0017] Compared with the prior art, the present invention has at least one of the following beneficial effects:

[0018] The present invention provides a hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line. Because the substrate integrated waveguide has low loss characteristics in the high frequency band, it is suitable for high frequency signal transmission in TE10 mode; while the substrate integrated coaxial line structure supports low frequency TEM mode transmission and is suitable for baseband signals. Through this hybrid design structure, a wide bandwidth can be efficiently covered in a single physical system, and high-quality transmission can be achieved from low frequency baseband to high frequency microwave signals. Attached Figure Description

[0019] Other features, objects, and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:

[0020] Figure 1 S21 curves for substrate integrated coaxial line (SICL) and substrate integrated waveguide (SIW) from low frequency to high frequency;

[0021] Figure 2 This is a schematic diagram illustrating the principle of a hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line in one embodiment of the present invention;

[0022] Figure 3 This is a schematic diagram of the substrate integrated waveguide structure in one embodiment of the present invention;

[0023] Figure 4 This is a schematic diagram of the substrate-integrated coaxial line structure in one embodiment of the present invention;

[0024] Figure 5 This is a model diagram of a SIW-SICL structure (SICL is located on the same side of SIW) in one embodiment of the present invention;

[0025] Figure 6 This is a model diagram of a SIW-SICL structure (SICL located above SIW) in one embodiment of the present invention;

[0026] Figure 7 This is a model diagram of a SIW-SICL structure (SICL located below SIW) in one embodiment of the present invention;

[0027] Figure 8The figures show simulation diagrams for S11 and S33 of a SIW-SICL structure (SICL located on the same side of SIW, f1 = 25 GHz, f2 = 50 GHz) in an embodiment of the present invention at 0-25 GHz.

[0028] Figure 9 The figures show simulation diagrams S21 and S43 of a SIW-SICL structure (SICL located on the same side of SIW, f1 = 25GHz, f2 = 50GHz) in an embodiment of the present invention under 0-25GHz and 25-50GHz respectively.

[0029] Figure 10 The images show simulation diagrams of S11 and S33 of a SIW-SICL structure (SICL located above SIW, f1 = 25GHz, f2 = 50GHz) in an embodiment of the present invention at 0-25GHz.

[0030] Figure 11 The figures show simulation diagrams for S21 and S43 of a SIW-SICL structure (SICL located above SIW, f1 = 25GHz, f2 = 50GHz) in an embodiment of the present invention under 0-25GHz and 25-50GHz conditions, respectively.

[0031] Figure 12 The figures show simulation diagrams of S11 and S33 of the SIW-SICL structure (SICL located below SIW, f1 = 25GHz, f2 = 50GHz) in an embodiment of the present invention at 0-25GHz.

[0032] Figure 13 The images show simulation diagrams for S21 and S43 of a SIW-SICL structure (SICL located below SIW, f1 = 25GHz, f2 = 50GHz) in an embodiment of the present invention at 0-25GHz. Detailed Implementation

[0033] The present invention will now be described in detail with reference to specific embodiments. These embodiments will help those skilled in the art to further understand the present invention, but do not limit the invention in any way. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention. These all fall within the scope of protection of the present invention.

[0034] Substrate-integrated waveguide structures are known for their low loss and high quality factor in high-frequency applications, making them suitable for high-frequency transmissions that require maintaining signal integrity. Meanwhile, substrate-integrated coaxial cable structures support transverse electromagnetic (TEM) mode, making them suitable for low-frequency signal transmission. They also have low dispersion characteristics and can effectively transmit DC and low-frequency signals.

[0035] Figure 1 The diagram shows the S21 curves of substrate integrated coaxial line (SICL) and substrate integrated waveguide (SIW) from low to high frequencies. It illustrates the S21 parameters of substrate integrated coaxial lines and substrate integrated waveguides of the same material and size. The solid line represents the substrate integrated coaxial line, and the dashed line represents the substrate integrated waveguide. The closer the S21 parameter is to 0, the lower the transmission line loss. The curves show that SIW has poor transmission performance at low frequencies, while SICL has better low-loss transmission performance at low frequencies, thus compensating for the shortcomings of SIW at low frequencies. While existing technologies (such as CN105226360A) can achieve wideband multi-channel parallel transmission, their drawback is that the loss of substrate integrated coaxial lines increases rapidly with increasing frequency, thus failing to meet the low-power requirements at high frequencies. Conversely, substrate integrated waveguides cannot transmit DC signals, but within their passband, the loss increases more slowly with increasing frequency.

[0036] In order to meet the requirements of high-frequency and low-frequency signal transmission, Figure 2 This invention illustrates an innovative structural design combining substrate integrated waveguide (SIW) and substrate integrated coaxial line (SICL) according to an embodiment of the present invention. This design aims to comprehensively utilize the advantages of substrate integrated coaxial line's good conduction performance and low loss at low frequencies (DC), and the low loss characteristics of substrate integrated waveguide at high frequencies, thereby achieving efficient transmission over a wide frequency band. One embodiment of the present invention provides a hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line, including a substrate integrated coaxial line structure and a substrate integrated waveguide structure. The substrate integrated coaxial line structure and the substrate integrated waveguide structure are arranged horizontally side-by-side or stacked vertically. The substrate integrated coaxial line structure and the substrate integrated waveguide structure share an outer conductor, forming a SIW-SICL structure. This achieves efficient integration of SIW and SICL, satisfying the transmission requirements of low-frequency baseband signals while supporting low-loss transmission of high-frequency signals within the same physical structure. This hybrid SIW and SICL structural design can effectively expand the frequency band coverage of the system and significantly improve signal transmission performance, providing strong support for next-generation data transmission systems.

[0037] Reference Figure 3 In some embodiments, the substrate integrated waveguide structure includes, from top to bottom, a first upper metal layer, a first dielectric layer, and a first lower metal layer. A first metallized via array is embedded in the first dielectric layer and penetrates the first dielectric layer. The first metallized via array is divided into two columns and connects the first upper metal layer and the first lower metal layer. The substrate integrated waveguide structure forms an effective waveguide boundary through the first metallized via array, the first upper metal layer, and the first lower metal layer, which is beneficial for low-loss transmission of high-frequency signals.

[0038] Reference Figure 4In some embodiments, the substrate integrated coaxial cable structure includes, from top to bottom, a second upper metal layer, a second dielectric layer, an inner conductor, and a second lower metal layer. A second metallized via array is embedded in the second dielectric layer and penetrates the second dielectric layer. The second metallized via array is divided into two columns and connects the second upper metal layer and the second lower metal layer. The inner conductor is located between the two columns of the second metallized via array and is used to transmit transverse electromagnetic wave modes, which are suitable for the transmission of low-frequency signals.

[0039] The hybrid structure in this embodiment of the invention consists of an upper metal layer, a lower metal layer, a via array, a dielectric layer, and an inner conductor of the SICL and SIW, employing a quasi-closed design to achieve low-loss and high-efficiency transmission over a wide frequency band. In this structural design, the inner conductor of the substrate-integrated coaxial waveguide structure is embedded within the dielectric layer, providing a low-loss path for electromagnetic wave propagation. The metallized via array and the upper and lower metal layers together form a shielding structure, providing electromagnetic isolation, reducing signal leakage and interference, and ensuring efficient signal transmission. This hybrid structure realizes the integrated design of substrate-integrated coaxial waveguide structures and substrate-integrated coaxial line structures at the circuit board, package, and chip levels, combining the advantages of both to improve the performance of microwave circuits and support the need for efficient interconnection at different integration levels.

[0040] based on Figure 2 The schematic diagram shown can be rotated by 0°, 90°, and 270° according to the direction of the arrows in the diagram to obtain the specific layout of the hybrid structure in the embodiment of the present invention. For example... Figure 5 As shown, in some optional embodiments, the substrate-integrated waveguide structure and the substrate-integrated coaxial line structure are placed side-by-side on the same dielectric layer, sharing a metallized via array on one side. Other layers are arranged horizontally in corresponding order, forming a structure where the SICL is located on the same side of the SIW. This planar shared layout simplifies the manufacturing process and reduces the overall structure thickness, thereby achieving efficient signal transmission over a wide frequency band. This structure not only maintains the low-loss, high-frequency transmission characteristics of the SIW but also leverages the high-efficiency transmission advantages of the SICL in the low-frequency band, making it suitable for applications with high requirements for space utilization and integration.

[0041] In the above embodiments of the present invention, each column of the via array includes a plurality of vias. The vias in two columns are arranged at equal intervals along the length of the physical structure, meaning that adjacent vias are spaced equidistantly. The number of vias in each column of the via array depends on the length of the physical structure.

[0042] like Figure 6As shown, in some optional embodiments, the substrate integrated coaxial line structure is placed above the substrate integrated waveguide structure, and the two share the first upper metal layer above the substrate integrated waveguide structure. That is, the first upper metal layer of the substrate integrated waveguide structure is also the second lower metal layer of the substrate integrated coaxial line structure, forming a structural layout in which the SICL is located above the SIW.

[0043] In this layout, the SICL structure is placed above the SIW structure, achieving a more compact structural layout by sharing the first upper metal layer above the SIW. In this configuration, the SICL handles low-frequency TEM mode transmission, while the SIW transmits high-frequency TE10 mode signals, thus achieving separation of high-frequency and low-frequency signals within the same structure, reducing signal interference, and making it particularly suitable for the needs of multi-band communication systems.

[0044] like Figure 7 As shown, in some optional embodiments, the substrate integrated waveguide structure is placed on the substrate integrated coaxial line structure, and the two share the second upper metal layer above the substrate integrated coaxial line structure. That is, the second upper metal layer of the substrate integrated coaxial line structure is also the first lower metal layer of the substrate integrated waveguide structure, forming a structural layout in which the SIW is located above the SICL.

[0045] This layout places the SIW (Signal Induction Wave) on top of the SICL (Signal Induction Layer), sharing the metal layer above the SICL, forming a hybrid structure with the SIW and SICL stacked on top of each other. This configuration allows for efficient transmission of low-frequency baseband signals via the lower SICL, while at higher frequencies, the SIW achieves a low-loss transmission path through the TE10 mode. This layered design optimizes the electromagnetic characteristics of both the SIW and SICL for multi-band applications, providing a more flexible solution for multifunctional communication systems.

[0046] The hybrid structure in the above embodiments of the present invention adopts a quasi-closed design and proposes three physical layout forms: The first is that SIW and SICL are placed flat and arranged side by side on the same side, with SICL and SIW arranged in a left-right side-by-side manner to achieve a coplanar structural configuration on the same side, which facilitates a smooth transition; the second is a stacked structure with SICL on top and SIW below, forming a vertically stacked configuration, resulting in a compact design suitable for systems with limited space; the third is a reverse vertical stacking method, with SICL located below SIW, forming another vertically stacked structure, achieving structural layering optimization, which helps to optimize low-frequency signal transmission. Therefore, it is possible to optimize signal transmission characteristics over a wide frequency band, provide high-quality transmission paths in different frequency bands, and improve system efficiency and applicable frequency range.

[0047] In the above embodiments of the present invention, the operating frequency band of the substrate-integrated coaxial line structure ranges from DC to the cutoff frequency f1. The operating frequency band of the substrate-integrated waveguide structure ranges from the cutoff frequency f1 to the cutoff frequency f2, and the cutoff frequency f2 is twice the cutoff frequency f1.

[0048] For substrate-integrated waveguides and substrate-integrated coaxial lines, the key parameter is the cutoff frequency fc. Assume each metallized via has a diameter of d, the spacing between two adjacent metallized vias is s, and the width between two adjacent columns of metallized vias is w. The thickness of the top and bottom metal layers and the inner conductor is t; the thickness of the dielectric layer is h, and the relative permittivity of the dielectric is ε. r The length of the physical structure is L. If the speed of light in a vacuum is denoted as c, then the formula for calculating the cutoff frequency fc is:

[0049]

[0050] At this point, the single-mode (TEM) operating bandwidth of the substrate-integrated coaxial line is from DC to fc, and the single-mode operating bandwidth of the substrate-integrated waveguide is from fc to 2fc.

[0051] In the structure proposed in the above embodiments of the present invention, when the substrate integrated waveguide is above the substrate integrated coaxial line, or the substrate integrated coaxial line is above the substrate integrated waveguide, the dimensions w, d, s, etc. of the substrate integrated waveguide and the substrate integrated coaxial line are naturally the same, and the relative permittivity ε of the material is also the same. r The same applies. Therefore, at this point, f1 = fc and f2 = 2fc are exactly satisfied. The operating bandwidth of the entire structure is from DC to 2fc, and it occupies the smallest area.

[0052] In the structure proposed in the above embodiments of the present invention, when the substrate integrated waveguide is on the side of the substrate integrated coaxial line, the dimensions d and s of the substrate integrated waveguide and the substrate integrated coaxial line are naturally the same. The w dimension of the two must be set to be the same, so that f1 = fc and f2 = 2fc can be satisfied. The operating bandwidth of the entire structure is DC to 2fc, and the thickness occupied is minimized.

[0053] Therefore, the hybrid structure of substrate integrated waveguide and substrate integrated coaxial line in the above embodiments of the present invention is not a simple combination of the two, but the result of minimizing the horizontal (area) and vertical (thickness) directions based on satisfying the continuous operating frequency band characteristics of the two, which is in line with the development trend of high-density and miniaturized integrated circuits.

[0054] It should be noted that, in addition to the three hybrid structures mentioned above, other structural layouts can also be used in other implementations, as long as they can achieve the same functions.

[0055] The above embodiments of the present invention demonstrate significant design flexibility through a multi-layered hybrid layout of SIW and SICL, capable of adapting to diverse transmission requirements ranging from low-frequency baseband signals to high-frequency microwave signals, making it suitable for future applications in highly integrated RF and microwave systems. The hybrid structure uses TEM mode for signal transmission at low frequencies and TE10 mode for signal transmission at high frequencies.

[0056] Continue to refer to Figures 5-7 Three different device placement methods are given, among which: Figure 5 SIW and SICL are placed parallel to each other. Figure 6 SICL is placed above SIW. Figure 7 SICL is placed below SIW. Figure 5 The dimensions are labeled with the following: dielectric layer thickness h, metal layer thickness t, via diameter d, distance s between the centers of two vias, inner conductor width b, inner conductor length L, inner conductor height t, and distance w between two rows of vias. The width of the hybrid structure is 2w. Port 1 represents the waveport on the SICL side, and its corresponding port is waveport 2. Similarly, on the SIW side, port 3 represents port 4. Figure 6 and Figure 7 All adopt and Figure 5 The same size and dimensional parameters are set, only the placement method differs. Within the limits of the process, the spacing 's' of the metallized vias should be as small as possible to ensure good electromagnetic shielding performance. Typically, 's' needs to be less than or equal to 2'd".

[0057] Taking a hybrid structure of substrate-integrated coaxial waveguide and substrate-integrated coaxial line at the circuit board level as an example, RogersRT / duroid 5880 material (dielectric constant of 2.2, dielectric loss tangent of 0.0009) is selected as the dielectric layer. Specific design parameters are as follows: inner conductor width b = 0.1 mm, metal layer thickness t = 0.01 mm, dielectric layer thickness h = 0.254 mm, via diameter d = 0.4 mm, via spacing s = 0.8 mm, waveguide length L = 18 mm, and width w = 4.2 mm. Using the above formula for calculating the cutoff frequency fc, the operating frequency range of the substrate-integrated coaxial line structure can be calculated from DC to 25 GHz, and the operating frequency range of the substrate-integrated waveguide structure can be calculated from 25 GHz to 50 GHz.

[0058] The hybrid structure includes port 1, port 2, port 3, and port 4. The insertion loss parameters S21 and S43, and the return loss parameters S11 and S33 are as follows: Figures 8-13 As shown, where, Figure 8 and Figure 9 They were shown respectively Figure 5 Return loss and insertion loss depending on placement method Figure 10 and Figure 11 Showing Figure 6 Return loss and insertion loss depending on placement method Figure 12 and Figure 13 This shows Figure 7 Return loss and insertion loss under different placement methods are represented by the horizontal axis (Frequence (GHz)) and the vertical axis (decibels (dB)). S11 represents the ratio of the signal reflected back from port 1 to the input signal when the signal is input from port 1; S21 represents the ratio of the output signal to the input signal when the signal is input from port 1 and transmitted to port 2; S33 represents the ratio of the signal reflected back from port 3 to the input signal when the signal is input from port 3; and S43 represents the ratio of the output signal to the input signal when the signal is input from port 3 and transmitted to port 4.

[0059] Depend on Figures 8-13 It can be seen that the hybrid structure can transmit effectively at low frequencies (DC-25GHz) and the S21 parameter is very close to 0, which indicates that it can transmit effectively and with low loss at low frequencies. Similarly, it can be seen that the S43 parameter is also close to 0 at high frequencies (25-50GHz), which further illustrates its advantage of low loss.

[0060] Based on the simulation results above, the hybrid structure of substrate integrated waveguide and substrate integrated coaxial line provided in the above embodiments of the present invention has the advantages of wide bandwidth, low loss and strong anti-electromagnetic interference capability, and is suitable for multi-channel parallel high-speed data transmission at the circuit board level / package level / chip level.

[0061] The SIW-SICL hybrid structure in the above embodiments of the present invention includes upper and lower metal layers, a dielectric layer, and an inner conductor, etc., with a metallized via array embedded in the dielectric layer to form a stable electromagnetic shield. By simultaneously supporting high-frequency and low-frequency signal transmission in the same physical structure, this structural design significantly expands the system's frequency band coverage and improves transmission efficiency. This structure combines the low-loss high-frequency transmission characteristics of SIW with the high-efficiency baseband signal transmission advantages of SICL at low frequencies, achieving superior signal integrity and anti-interference performance. This integration of SIW and SICL not only effectively enhances the system's transmission performance but also provides a reliable and efficient solution for future data transmission needs.

[0062] Specific embodiments of the present invention have been described above. It should be understood that the present invention is not limited to the specific embodiments described above, and those skilled in the art can make various modifications or variations within the scope of the claims, which do not affect the essence of the present invention. The above preferred features can be used in any combination without conflict.

Claims

1. A hybrid structure based on substrate-integrated waveguide and substrate-integrated coaxial line, characterized in that, It includes a substrate-integrated coaxial line structure and a substrate-integrated waveguide structure; the substrate-integrated coaxial line structure and the substrate-integrated waveguide structure are arranged horizontally side by side or stacked one on top of the other; the substrate-integrated coaxial line structure and the substrate-integrated waveguide structure share an outer conductor. The substrate integrated waveguide structure comprises, from top to bottom, a first upper metal layer, a first dielectric layer, and a first lower metal layer. A first metallized via array is embedded in the first dielectric layer and connects the first upper metal layer and the first lower metal layer. The first metallized via array is divided into two columns. The substrate integrated waveguide structure forms an effective waveguide boundary through the first metallized via array, the first upper metal layer, and the first lower metal layer. The substrate-integrated coaxial cable structure comprises, from top to bottom, a second upper metal layer, a second dielectric layer, an inner conductor, and a second lower metal layer. A second metallized via array is embedded in the second dielectric layer. The second metallized via array is divided into two columns and connected to the second upper metal layer and the second lower metal layer. The inner conductor is located between the two columns of the second metallized via array and is used to transmit transverse electromagnetic wave modes, suitable for the transmission of low-frequency signals.

2. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 1, characterized in that, The substrate-integrated waveguide structure and the substrate-integrated coaxial line structure are placed side by side on the same dielectric layer, sharing a row of metallized vias on one side.

3. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 1, characterized in that, The substrate-integrated coaxial line structure is placed above the substrate-integrated waveguide structure, and the two share the first upper metal layer above the substrate-integrated waveguide structure.

4. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 1, characterized in that, The substrate-integrated waveguide structure is placed on top of the substrate-integrated coaxial line structure, and the two share the second upper metal layer above the substrate-integrated coaxial line structure.

5. The hybrid structure based on substrate-integrated waveguide and substrate-integrated coaxial line according to claim 1, characterized in that, The metallized vias in the first and second metallized via arrays are arranged at equal intervals along the length of the physical structure.

6. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 1, characterized in that, The operating frequency range of the substrate-integrated coaxial cable structure is from DC to the cutoff frequency f1.

7. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 1, characterized in that, The operating frequency band of the substrate integrated waveguide structure ranges from the cutoff frequency f1 to the cutoff frequency f2, and the cutoff frequency f2 is twice the cutoff frequency f1.

8. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 1, characterized in that, The hybrid structure transmits signals in TEM mode at low frequencies and in TE10 mode at high frequencies.

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