Wide-input-range low-power-consumption power rail for vehicle-mounted system

Abstract

The invention discloses a vehicle-mounted system wide input range low power consumption type power rail, and relates to the technical field of integrated circuits, the vehicle-mounted system wide input range low power consumption type power rail comprises a voltage stabilizing diode D1, k series connection depletion mode NMOS tubes, j series connection depletion mode NMOS tubes, i parallel connection PMOS tubes, m parallel connection PMOS tubes and s parallel connection NMOS tubes, k, j, i, m and s are positive integers; the invention further discloses a driving chip of the vehicle-mounted system, and the driving chip is provided with the wide-input-range low-power-consumption power rail for the vehicle-mounted system. According to the invention, the generation of a power supply rail in the prior art is improved, and the original structure of a resistor and a voltage stabilizing diode is improved into the structure of a PMOS tube and the voltage stabilizing diode, so that the power consumption of the system is better controlled, and the system is in a stable power consumption state in a wider voltage input range.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuits, and in particular to a power rail structure with wide input voltage and low power consumption in a vehicle-mounted chip. Background Art

[0002] With the development of automobile electrification and intelligence, the design of vehicle power supply becomes more and more important. In the power rail generation circuit of the prior art, the power supply is stabilized by connecting a small resistor in series with a voltage regulator diode, and then a stable voltage rail is generated through the MOS tube source follower structure. When the power supply voltage gradually increases, the voltage drop on the resistor will gradually increase, so that the current in the path becomes larger, causing the power consumption of the entire system to increase. And because the resistor is affected by PVT, it will change at different process feet and temperatures, resulting in unstable current, and the reverse voltage on the voltage regulator diode is also unstable, so the final voltage and power consumption are unstable. Therefore, the structure of the vehicle power supply system of the prior art has defects.

[0003] The invention patent "A Design Method for a Wide Input Auxiliary Voltage Stabilizer Circuit for New Energy Vehicles" Publication No. CN109088540B discloses a wide input auxiliary voltage stabilizer circuit for new energy vehicles. It includes transistors Q1, Q2 and Q3, Zener diodes Z1 and Z2, and resistors R1, R2, R3, R4, R5 and R6; one end of resistor R2 and the anode of Zener diode Z1 are connected to the base of transistor Q1, one end of resistor R3 and the collector of transistor Q1 are connected to the base of transistor Q2, one end of resistor R4 and the collector of transistor Q2 are connected to the base of transistor Q3, and the collector of transistor Q3 is connected to one end of resistor R5 and one end of resistor R6. However, as the input power supply voltage increases, the voltage drop on resistors R1 and R2 gradually increases, resulting in increased power consumption of the entire circuit system.

[0004] The invention patent "Linear voltage regulator circuit and driving unit of power stage circuit based thereon" with publication number CN113271005A discloses a linear voltage regulator circuit, including: a resistor, one end of which is connected to an input voltage; a first MOS tube, whose gate and drain are both connected to the other end of the resistor; a voltage regulator diode, whose negative terminal is connected to the source of the first MOS tube and whose positive terminal is grounded; a second MOS tube, whose gate is simultaneously connected to the resistor and the gate and drain of the first MOS tube, and whose drain is connected to the input voltage; and a capacitor, one end of which is connected to the positive terminal of the voltage regulator diode and then to the ground, and the other end is connected to the source of the second MOS tube, so that a stable power supply voltage can be output from the source of the second MOS tube. However, as the input power supply voltage increases, the voltage drop on the resistor R1 increases, which will cause the power consumption of the entire circuit to increase.

[0005] Therefore, technicians in this field are committed to studying a low-power power rail with a wide input range for an in-vehicle system. Summary of the invention

[0006] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is how to avoid the change of power consumption under a wide input voltage scenario.

[0007] After analysis, it was found that the reason why the power consumption of the existing structure changes with the input voltage is the instability of the current on the current limiting resistor. If the current of the voltage regulator diode branch can be determined so that the branch current does not change with the input voltage, the power consumption of the vehicle power system will be stable. This application uses a stable current to replace the current limiting resistor to solve the problem of power consumption changing with input voltage.

[0008] In one embodiment of the present invention, a low-power power rail with a wide input range for an in-vehicle system is provided, comprising: A voltage zener diode D1, the anode of which is grounded GND; k depletion-type NMOS tubes connected in series, including a depletion-type NMOS tube Q1, a depletion-type NMOS tube Q2, ..., a depletion-type NMOS tube Qk; the gate and source of the depletion-type NMOS tube Q1 are grounded GND, the gate of the depletion-type NMOS tube Q1, the gate of the depletion-type NMOS tube Q2, ..., the gate of the depletion-type NMOS tube Qk are connected together, the drain of the depletion-type NMOS tube Q1 is connected to the source of the depletion-type NMOS tube Q2, and so on, the drain of the depletion-type NMOS tube Qk-1 is connected to the source of the depletion-type NMOS tube Qk; j depletion-type NMOS tubes connected in series, including a depletion-type NMOS tube F1, a depletion-type NMOS tube F2, ..., a depletion-type NMOS tube Fj; the gate and source of the depletion-type NMOS tube F1 are connected to the drain of the depletion-type NMOS tube Qk, the gate of the depletion-type NMOS tube F1, the gate of the depletion-type NMOS tube F2, ..., the gate of the depletion-type NMOS tube Fj are connected together, the drain of the depletion-type NMOS tube F1 is connected to the source of the depletion-type NMOS tube F2, and so on, the drain of the depletion-type NMOS tube Fj-1 is connected to the source of the depletion-type NMOS tube Fj; i PMOS tubes connected in parallel, including PMOS tube A1, PMOS tube A2, ..., PMOS tube Ai; the gate and drain of PMOS tube A1 are short-circuited and connected to the drain of depletion-type NMOS tube Fj, the gate of PMOS tube A1, the gate of PMOS tube A2, ..., the gate of PMOS tube Ai are connected together, the drain of PMOS tube A1, the drain of PMOS tube A2, ..., the drain of PMOS tube Ai are connected together, the source of PMOS tube A1, the source of PMOS tube A2, ..., the source of PMOS tube Ai are connected together and connected to the power supply VDD; m parallel-connected PMOS tubes, including PMOS tube P1, PMOS tube P2, ..., PMOS tube Pm; the gate of PMOS tube P1, the gate of PMOS tube P2, ..., the gate of PMOS tube Pm are connected together, the drain of PMOS tube P1, the drain of PMOS tube P2, ..., the drain of PMOS tube Pm are connected together and connected to the cathode of voltage zener diode D1, the source of PMOS tube P1, the source of PMOS tube P2, ..., the source of PMOS tube Pm are connected together and connected to power supply VDD, and the gate of PMOS tube P1 is connected to the gate of PMOS tube A1; s parallel-connected NMOS tubes, including NMOS tube N1, NMOS tube N2, ..., NMOS tube Ns; the drain of NMOS tube N1, the drain of NMOS tube N2, ..., the drain of NMOS tube Ns are connected together and connected to the power supply VDD, the gate of NMOS tube N1 is connected to the cathode of the voltage-stabilizing diode D1, the source of NMOS tube N1, the source of NMOS tube N2, ..., the source of NMOS tube Ns are connected together and output voltage V2; k, j, i, m, s are all positive integers; Optionally, in the wide input range low power consumption power rail for the vehicle-mounted system in the above embodiment, the width and length of the Zener diode D1 are greater than or equal to 1 um and less than or equal to 8 um.

[0009] Preferably, in the wide input range low power consumption power rail for the vehicle-mounted system in the above embodiment, the width and length of the voltage regulator diode D1 is equal to 4 um.

[0010] Optionally, in any of the above embodiments of the low-power power rail with wide input range for an in-vehicle system, the range of k is greater than or equal to 2 and less than or equal to 10.

[0011] Preferably, in the above embodiment of the low power consumption power rail with wide input range for the vehicle-mounted system, k is equal to 6.

[0012] Optionally, in any of the above embodiments of the low-power power rail with wide input range for an in-vehicle system, the range of j is greater than or equal to 2 and less than or equal to 10.

[0013] Preferably, in the above embodiment of the low power consumption power rail with wide input range for the vehicle-mounted system, j is equal to 6.

[0014] Optionally, in any of the above embodiments of the low-power power rail with wide input range for an in-vehicle system, the range of i is greater than or equal to 1 and less than or equal to 20.

[0015] Preferably, in the above embodiment of the low power consumption power rail with wide input range for the vehicle-mounted system, i is equal to 4.

[0016] Optionally, in any of the above embodiments of the low-power power rail with wide input range for an in-vehicle system, the range of m is greater than or equal to 1 and less than or equal to 20.

[0017] Preferably, in the above embodiment of the low-power power rail with wide input range for the vehicle-mounted system, m is equal to 4.

[0018] Optionally, in any of the above embodiments of the low-power power rail with wide input range for an in-vehicle system, the range of s is greater than or equal to 20 and less than or equal to 60.

[0019] Preferably, in the above embodiment of the low power consumption power rail with wide input range for the vehicle-mounted system, s is equal to 50.

[0020] Optionally, in any of the above embodiments, in the low-power power rail with wide input range for vehicle-mounted systems, the channel length L of the depletion-type NMOS tube Q1, the depletion-type NMOS tube Q2, ..., the depletion-type NMOS tube Qk in the k series-connected depletion-type NMOS tubes is greater than or equal to 1 um and less than or equal to 30 um.

[0021] Preferably, in the wide input range low power consumption power rail for the vehicle system in the above embodiment, the channel length L of the depletion type NMOS tube Q1, the depletion type NMOS tube Q2, ..., the depletion type NMOS tube Qk in the k series-connected depletion type NMOS tubes is equal to 18 um.

[0022] Furthermore, in the wide input range low power consumption power rail for the vehicle-mounted system in the above embodiment, the channel widths of the depletion type NMOS tubes Q1, Q2, ..., Qk in the k series-connected depletion type NMOS tubes are greater than or equal to 0.5 um and less than or equal to 5 um.

[0023] Preferably, in the wide input range low power consumption power rail for the vehicle system in the above embodiment, the channel widths of the depletion type NMOS tubes Q1, Q2, ..., Qk in the k series-connected depletion type NMOS tubes are equal to 3 um.

[0024] Furthermore, in the above-mentioned embodiment of the wide input range low power consumption power rail for the vehicle-mounted system, the k series-connected depletion-type NMOS tubes are of the same type.

[0025] Optionally, in any of the above embodiments, in the low-power power rail with wide input range for vehicle-mounted systems, the channel length L of the depletion-type NMOS tube F1, the depletion-type NMOS tube F2, ..., the depletion-type NMOS tube Fj in the j series-connected depletion-type NMOS tubes is greater than or equal to 1 um and less than or equal to 30 um.

[0026] Preferably, in the wide input range low power consumption power rail for the vehicle-mounted system in the above embodiment, the channel length L of the depletion type NMOS tube F1, the depletion type NMOS tube F2, ..., the depletion type NMOS tube Fj in the j series-connected depletion type NMOS tubes is equal to 18 um.

[0027] Furthermore, in the wide input range low power consumption power rail for the vehicle-mounted system in the above embodiment, the channel widths of the depletion type NMOS tubes F1, F2, ..., and Fj in the j series-connected depletion type NMOS tubes are greater than or equal to 0.5 um and less than or equal to 5 um.

[0028] Preferably, in the wide input range low power consumption power rail for vehicle-mounted systems in the above embodiment, the channel widths of the depletion type NMOS tubes F1, F2, ..., and Fj in the j series-connected depletion type NMOS tubes are equal to 3 um.

[0029] Furthermore, in the above-mentioned embodiment of the low-power power rail with wide input range for the vehicle-mounted system, the j series-connected depletion-type NMOS tubes are of the same type.

[0030] Optionally, in any of the above embodiments, in the low-power power rail with wide input range for vehicle-mounted systems, the channel length L of PMOS tube A1, PMOS tube A2, ..., PMOS tube Ai in i parallel PMOS tubes is greater than or equal to 2um and less than or equal to 5um.

[0031] Preferably, in the wide input range low power consumption power rail for the vehicle-mounted system in the above embodiment, the channel length L of PMOS tube A1, PMOS tube A2, ..., PMOS tube Ai in i parallel PMOS tubes is equal to 4 um.

[0032] Furthermore, in the wide input range low power consumption power rail for the vehicle system in the above embodiment, the channel widths of PMOS tube A1, PMOS tube A2, ..., PMOS tube Ai in the i parallel PMOS tubes are greater than or equal to 5 um and less than or equal to 10 um.

[0033] Preferably, in the wide input range low power consumption power rail for the vehicle-mounted system in the above embodiment, the channel widths of PMOS tube A1, PMOS tube A2, ..., PMOS tube Ai in the i parallel PMOS tubes are equal to 8 um.

[0034] Furthermore, in the above-mentioned embodiment of the low-power power rail with wide input range for the vehicle-mounted system, the i series-connected PMOS tubes are of the same type.

[0035] Optionally, in any of the above embodiments, in the low-power power rail with wide input range for vehicle-mounted systems, the channel length L of the PMOS tube P1, PMOS tube P2, ..., PMOS tube Pm in the m parallel PMOS tubes is greater than or equal to 2um and less than or equal to 5um.

[0036] Preferably, in the wide input range low power consumption power rail for the vehicle-mounted system in the above embodiment, the channel length L of the PMOS tube P1, PMOS tube P2, ..., PMOS tube Pm in the m parallel PMOS tubes is equal to 4 um.

[0037] Furthermore, in the wide input range low power consumption power rail for the vehicle system in the above embodiment, the channel widths of the PMOS tubes P1, PMOS tubes P2, ..., PMOS tubes Pm in the m parallel PMOS tubes are greater than or equal to 5 um and less than or equal to 10 um.

[0038] Preferably, in the wide input range low power consumption power rail for the vehicle-mounted system in the above embodiment, the channel width of the PMOS tube P1, PMOS tube P2, ..., PMOS tube Pm in the m parallel PMOS tubes is equal to 8 um.

[0039] Furthermore, in the above-mentioned embodiment of the low-power power rail with wide input range for the vehicle-mounted system, the m parallel-connected PMOS tubes are of the same type.

[0040] Optionally, in any of the above embodiments, in the low-power power rail with wide input range for vehicle-mounted systems, the channel length L of NMOS tube N1, NMOS tube N2, ..., NMOS tube Ns in the s parallel NMOS tubes is greater than or equal to 1um and less than or equal to 3um.

[0041] Preferably, in the wide input range low power consumption power rail for the vehicle-mounted system in the above embodiment, the channel length L of the NMOS tube N1, NMOS tube N2, ..., NMOS tube Ns in the s parallel NMOS tubes is equal to 2 um.

[0042] Optionally, in any of the above embodiments, in the low-power power rail with wide input range for vehicle-mounted systems, the channel widths of NMOS tubes N1, NMOS tubes N2, ..., NMOS tubes Ns in the s parallel NMOS tubes are greater than or equal to 20um and less than or equal to 30um.

[0043] Preferably, in the wide input range low power consumption power rail for the vehicle-mounted system in the above embodiment, the channel widths of NMOS tubes N1, NMOS tube N2, ..., NMOS tube Ns in the s parallel NMOS tubes are equal to 25 um.

[0044] Furthermore, in the above-mentioned embodiment of the low-power power rail with wide input range for the vehicle-mounted system, the types of the s parallel-connected NMOS tubes are the same.

[0045] When the power supply voltage gradually rises, the PMOS tube A1 is connected by a diode and is turned on immediately after power is turned on. The gate and source of the depletion-type NMOS tube Q1 are short-circuited, and V GS =0V, due to the threshold voltage V TH is negative, so the depletion-type NMOS tube Q1 is turned on, and the branch current is as follows: in is the electron mobility, represents the gate oxide thickness per unit area, W represents the gate width of the depletion-type NMOS tube Q1, L represents the channel length of the depletion-type NMOS tube Q1, V GS represents the gate-source voltage of the depletion-mode NMOS Q1, V TH Represents the threshold voltage of the depletion-type NMOS tube Q1.

[0046] Due to the depletion type NMOS tube Q1 , Sure, is a process constant. In order to make the branch current as small as possible and the power consumption as low as possible, the channel length L is increased to reduce the current. The purpose of connecting the depletion-type NMOS tubes Q2, ..., and Qk in series is to increase the L of the depletion-type NMOS tube Q1. The connection mode of the j depletion-type NMOS tubes in series is the same as that of the k depletion-type NMOS tubes in series. When the input power supply voltage VDD is greater than or equal to 24V, the j depletion-type NMOS tubes in series play a role of withstanding high voltage. The generated current is determined by the k depletion-type NMOS tubes in series. Therefore, the branch current size I0 can be determined by controlling the channel length, width and number of the k depletion-type NMOS tubes in series. The i parallel PMOS tubes and the m parallel PMOS tubes in the form of diode connection form a current mirror structure. The current I0 of the i parallel PMOS tube branch is copied to the current I1 of the voltage-stabilizing diode D1 branch. The proportion of current copy is achieved by controlling the number of the m parallel PMOS tubes, which is expressed by the following formula: Therefore, the current I1 flowing through the Zener diode D1 is determined. Under the action of the reverse current, the clamping voltage V1 of the Zener diode D1 generates the voltage rail V2 through the source follower structure of the NMOS tube N1. V2=V1-V GS .

[0047] Since the branch current I0 of the i parallel PMOS tubes and the branch current I1 of the voltage stabilizing diode D1 are determined and do not change with the input voltage VDD, the problem of current change caused by input voltage change in the current limiting resistor in the existing structure is solved.

[0048] Based on the above embodiments, in another embodiment of the present invention, a driving chip of an in-vehicle system is provided, which is provided with a wide input range and low power consumption power rail for the in-vehicle system in any of the above embodiments.

[0049] The present invention improves the power rail generation of the prior art by changing the original structure of a resistor plus a voltage-stabilizing diode into a structure of a PMOS tube plus a voltage-stabilizing diode, thereby better controlling the power consumption of the system and keeping it in a stable power consumption state within a wider voltage input range.

[0050] The concept, specific structure and technical effects of the present invention will be further described below in conjunction with the accompanying drawings to fully understand the purpose, characteristics and effects of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 is a schematic structural diagram illustrating a power supply generating circuit inside a vehicle system chip of the prior art according to an exemplary embodiment; Figure 2is a schematic diagram illustrating a structure of a wide input range low power consumption power rail for an in-vehicle system according to an exemplary embodiment; Figure 3 is a schematic diagram illustrating the structure of a driving chip of a vehicle-mounted system according to an exemplary embodiment. DETAILED DESCRIPTION

[0052] The following describes several preferred embodiments of the present invention with reference to the drawings in the specification, so that the technical content is clearer and easier to understand. The present invention can be embodied in many different forms of embodiments, and the protection scope of the present invention is not limited to the embodiments mentioned in the text.

[0053] In the drawings, components with the same structure are indicated by the same numerical reference numerals, and components with similar structures or functions are indicated by similar numerical reference numerals. The size and thickness of each component shown in the drawings are arbitrarily shown, and the present invention does not limit the size and thickness of each component. In order to make the illustration clearer, the thickness of the components is schematically exaggerated in some places in the drawings.

[0054] like Figure 1 As shown, in the internal power generation circuit of the vehicle system chip of the prior art, the power supply is stabilized by connecting a small resistor in series with a voltage regulator diode, and then a stable voltage rail is generated through the MOS tube source follower structure. When the power supply voltage gradually increases, the voltage drop on the resistor will gradually increase, so that the current in the path becomes larger, causing the power consumption of the entire system to increase. And because the resistor is affected by PVT, it will change at different process feet and temperatures, resulting in unstable current, and the reverse voltage on the voltage regulator diode is also unstable, so the voltage and power consumption generated in the end are unstable.

[0055] It can be seen that the reason why the power consumption of the existing structure changes with the input voltage is the instability of the current on the current limiting resistor. If the current of the voltage-stabilizing diode branch can be determined so that the branch current does not change with the input voltage, the power consumption of the vehicle power system will be stable. This application uses a stable current to replace the current limiting resistor to solve the problem of power consumption changing with the input voltage.

[0056] The present application discloses a low-power power rail with a wide input range for an in-vehicle system, such as Figure 2 As shown, including: A voltage zener diode D1, the anode of the voltage zener diode D1 is grounded GND, and the width and length of the voltage zener diode D1 are equal to 4um; Six depletion-type NMOS tubes connected in series include a depletion-type NMOS tube Q1, a depletion-type NMOS tube Q2, ..., and a depletion-type NMOS tube Q6. Among the six depletion-type NMOS tubes connected in series, the depletion-type NMOS tube Q1, the depletion-type NMOS tube Q2, ..., and the depletion-type NMOS tube Q6 are of the same type, and the channel length L is equal to 18 um, and the channel width is equal to 3 um; the gate and source of the depletion-type NMOS tube Q1 are grounded GND, the gate of the depletion-type NMOS tube Q1, the gate of the depletion-type NMOS tube Q2, ..., and the gate of the depletion-type NMOS tube Q6 are connected together, the drain of the depletion-type NMOS tube Q1 is connected to the source of the depletion-type NMOS tube Q2, and by analogy, the drain of the depletion-type NMOS tube Q5 is connected to the source of the depletion-type NMOS tube Q6; Six depletion-type NMOS tubes connected in series include a depletion-type NMOS tube F1, a depletion-type NMOS tube F2, ..., and a depletion-type NMOS tube F6. The depletion-type NMOS tubes F1, the depletion-type NMOS tube F2, ..., and the depletion-type NMOS tube F6 of the six depletion-type NMOS tubes connected in series are of the same type, and the channel length L is equal to 18 um, and the channel width is equal to 3 um; the gate and source of the depletion-type NMOS tube F1 are connected to the drain of the depletion-type NMOS tube Q6, the gate of the depletion-type NMOS tube F1, the gate of the depletion-type NMOS tube F2, ..., and the gate of the depletion-type NMOS tube F6 are connected together, the drain of the depletion-type NMOS tube F1 is connected to the source of the depletion-type NMOS tube F2, and so on, the drain of the depletion-type NMOS tube F5 is connected to the source of the depletion-type NMOS tube F6; Four parallel PMOS tubes include PMOS tube A1, PMOS tube A2, PMOS tube A3, and PMOS tube A4. Among the four parallel PMOS tubes, PMOS tube A1, PMOS tube A2, PMOS tube A3, and PMOS tube A4 are of the same type, and have a channel length L of 4 um and a channel width of 8 um. The gate and drain of PMOS tube A1 are short-circuited and connected to the drain of depletion-type NMOS tube F6. The gate of PMOS tube A1, the gate of PMOS tube A2, the gate of PMOS tube A3, and the gate of PMOS tube A4 are connected together. The drain of PMOS tube A1, the drain of PMOS tube A2, the drain of PMOS tube A3, and the drain of PMOS tube A4 are connected together. The source of PMOS tube A1, the source of PMOS tube A2, the source of PMOS tube A3, and the source of PMOS tube A4 are connected together and connected to a power supply VDD. 4 parallel PMOS tubes, including PMOS tube P1, PMOS tube P2, PMOS tube P3, and PMOS tube P4, wherein the PMOS tube P1, PMOS tube P2, PMOS tube P3, and PMOS tube P4 are of the same type, and have a channel length L of 4 um and a channel width of 8 um; a gate of the PMOS tube P1, a gate of the PMOS tube P2, a gate of the PMOS tube P3, and a gate of the PMOS tube P4 are connected together, a drain of the PMOS tube P1, a drain of the PMOS tube P2, a drain of the PMOS tube P3, and a drain of the PMOS tube P4 are connected together and connected to a cathode of a voltage zener diode D1, a source of the PMOS tube P1, a source of the PMOS tube P2, a source of the PMOS tube P3, and a source of the PMOS tube P4 are connected together and connected to a power supply VDD, and a gate of the PMOS tube P1 is connected to a gate of the PMOS tube A1; 50 NMOS tubes connected in parallel include NMOS tube N1, NMOS tube N2, ..., NMOS tube N50. Among the 50 NMOS tubes connected in parallel, NMOS tube N1, NMOS tube N2, ..., NMOS tube N50 are of the same type, and the channel length L is equal to 2um, and the channel width is equal to 25um; the drain of NMOS tube N1, the drain of NMOS tube N2, ..., the drain of NMOS tube N50 are connected together and connected to the power supply VDD, the gate of NMOS tube N1 is connected to the cathode of voltage zener diode D1, and the source of NMOS tube N1, the source of NMOS tube N2, ..., the source of NMOS tube N50 are connected together and output voltage V2.

[0057] When the power supply voltage gradually rises, the PMOS tube A1 is connected by a diode and is turned on immediately after power is turned on. The gate and source of the depletion-type NMOS tube Q1 are short-circuited, and V GS =0V, due to the threshold voltage V TH is negative, so the depletion-type NMOS tube Q1 is turned on, and the branch current is as follows: in is the electron mobility, represents the gate oxide thickness per unit area, W represents the gate width of the depletion-type NMOS tube Q1, L represents the channel length of the depletion-type NMOS tube Q1, V GS represents the gate-source voltage of the depletion-mode NMOS Q1, V TH Represents the threshold voltage of the depletion-type NMOS tube Q1.

[0058] Due to the depletion type NMOS tube Q1 , Sure, is a process constant. In order to make the branch current as small as possible and the power consumption as low as possible, the channel length L is increased to reduce the current. The purpose of connecting the depletion-type NMOS tubes Q2, ..., and Qk in series is to increase the L of the depletion-type NMOS tube Q1. The connection mode of the j depletion-type NMOS tubes in series is the same as that of the k depletion-type NMOS tubes in series. When the input power supply voltage VDD is greater than or equal to 24V, the j depletion-type NMOS tubes in series play a role of withstanding high voltage. The generated current is determined by the k depletion-type NMOS tubes in series. Therefore, the branch current size I0 can be determined by controlling the channel length, width and number of the k depletion-type NMOS tubes in series. The i parallel PMOS tubes and the m parallel PMOS tubes in the form of diode connection form a current mirror structure. The current I0 of the i parallel PMOS tube branch is copied to the current I1 of the voltage-stabilizing diode D1 branch. The proportion of current copy is achieved by controlling the number of the m parallel PMOS tubes, which is expressed by the following formula: Therefore, the current I1 flowing through the Zener diode D1 is determined. Under the action of the reverse current, the clamping voltage V1 of the Zener diode D1 generates the voltage rail V2 through the source follower structure of the NMOS tube N1. V2=V1-V GS .

[0059] Since the branch current I0 of the i parallel PMOS tubes and the branch current I1 of the voltage stabilizing diode D1 are determined and do not change with the input voltage VDD, the problem of current change caused by input voltage change in the current limiting resistor in the existing structure is solved.

[0060] Based on the above embodiment, in another embodiment of the present invention, a driving chip of a vehicle-mounted system is provided, such as Figure 3 As shown, a low-power power supply rail with a wide input range for an in-vehicle system according to the above-mentioned embodiment is provided.

[0061] The preferred specific embodiments of the present invention are described in detail above. It should be understood that a person skilled in the art can make many modifications and changes based on the concept of the present invention without creative work. Therefore, any technical solution that can be obtained by a person skilled in the art through logical analysis, reasoning or limited experiments based on the concept of the present invention on the basis of the prior art should be within the scope of protection determined by the claims.

Claims

1. A low-power power rail with wide input range for vehicle-mounted systems, characterized in that: include: A voltage zener diode D1, wherein the anode of the voltage zener diode D1 is grounded GND; k depletion-type NMOS tubes connected in series, including a depletion-type NMOS tube Q1, a depletion-type NMOS tube Q2, ..., a depletion-type NMOS tube Qk; the gate and source of the depletion-type NMOS tube Q1 are grounded GND, the gate of the depletion-type NMOS tube Q1, the gate of the depletion-type NMOS tube Q2, ..., the gate of the depletion-type NMOS tube Qk are connected together, the drain of the depletion-type NMOS tube Q1 is connected to the source of the depletion-type NMOS tube Q2, and so on, the drain of the depletion-type NMOS tube Qk-1 is connected to the source of the depletion-type NMOS tube Qk; j depletion-type NMOS tubes connected in series, including a depletion-type NMOS tube F1, a depletion-type NMOS tube F2, ..., a depletion-type NMOS tube Fj; the gate and source of the depletion-type NMOS tube F1 are connected to the drain of the depletion-type NMOS tube Qk, the gate of the depletion-type NMOS tube F1, the gate of the depletion-type NMOS tube F2, ..., the gate of the depletion-type NMOS tube Fj are connected together, the drain of the depletion-type NMOS tube F1 is connected to the source of the depletion-type NMOS tube F2, and so on, the drain of the depletion-type NMOS tube Fj-1 is connected to the source of the depletion-type NMOS tube Fj; i parallel PMOS tubes, including PMOS tube A1, PMOS tube A2, ..., PMOS tube Ai; the gate and drain of the PMOS tube A1 are short-circuited and connected to the drain of the depletion-type NMOS tube Fj, the gate of the PMOS tube A1, the gate of the PMOS tube A2, ..., the gate of the PMOS tube Ai are connected together, the drain of the PMOS tube A1, the drain of the PMOS tube A2, ..., the drain of the PMOS tube Ai are connected together, the source of the PMOS tube A1, the source of the PMOS tube A2, ..., the source of the PMOS tube Ai are connected together and connected to the power supply VDD; m parallel PMOS tubes, including PMOS tube P1, PMOS tube P2, ..., PMOS tube Pm; the gate of the PMOS tube P1, the gate of the PMOS tube P2, ..., the gate of the PMOS tube Pm are connected together, the drain of the PMOS tube P1, the drain of the PMOS tube P2, ..., the drain of the PMOS tube Pm are connected together and connected to the cathode of the voltage zener diode D1, the source of the PMOS tube P1, the source of the PMOS tube P2, ..., the source of the PMOS tube Pm are connected together and connected to the power supply VDD, and the gate of the PMOS tube P1 is connected to the gate of the PMOS tube A1; s parallel-connected NMOS tubes, including NMOS tube N1, NMOS tube N2, ..., NMOS tube Ns; the drain of the NMOS tube N1, the drain of the NMOS tube N2, ..., the drain of the NMOS tube Ns are connected together and connected to the power supply VDD, the gate of the NMOS tube N1 is connected to the cathode of the voltage zener diode D1, the source of the NMOS tube N1, the source of the NMOS tube N2, ..., the source of the NMOS tube Ns are connected together and output a voltage V2; The k, the j, the i, the m, and the s are all positive integers.

2. The low-power power rail with wide input range for vehicle-mounted systems according to claim 1, characterized in that: The width and length of the voltage zener diode D1 are greater than or equal to 1 um and less than or equal to 8 um.

3. The wide input range low power consumption power rail for vehicle-mounted systems according to claim 1, characterized in that: Among the k series-connected depletion-type NMOS tubes, the channel length L of the depletion-type NMOS tubes Q1 , Q2 , . . . , Qk is greater than or equal to 1 um and less than or equal to 30 um.

4. The low power consumption power rail with wide input range for vehicle-mounted systems as claimed in claim 3, characterized in that: The range of k is greater than or equal to 2 and less than or equal to 10.

5. The low power consumption power rail with wide input range for vehicle-mounted system as claimed in claim 3, characterized in that: The range of j is greater than or equal to 2 and less than or equal to 10.

6. The low power consumption power rail with wide input range for vehicle-mounted systems according to claim 1, characterized in that: The range of i is greater than or equal to 1 and less than or equal to 20.

7. The low power consumption power rail with wide input range for vehicle-mounted systems according to claim 1, characterized in that: The range of m is greater than or equal to 1 and less than or equal to 20.

8. The low power consumption power rail with wide input range for vehicle-mounted systems as claimed in claim 1, characterized in that: The range of s is greater than or equal to 20 and less than or equal to 60.

9. The low power consumption power rail with wide input range for vehicle-mounted systems according to claim 1, characterized in that: The range of m is greater than or equal to 1 and less than or equal to 20.

10. A driving chip for an in-vehicle system, characterized in that: A wide input range low power consumption power rail for an on-board system as described in any one of claims 1-9 is provided.

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