Full-color grid regulation and control light-emitting device sharing grid voltage

Abstract

The invention discloses a full-color grid regulation and control light-emitting device sharing grid voltage, and the device comprises a plurality of light-emitting units which are arranged in rows and columns, each light-emitting unit comprises an anode, a light-emitting function layer and a cathode, and the light-emitting units are divided into a red light-emitting unit, a green light-emitting unit and a blue light-emitting unit; the anode and / or cathode side of the light-emitting unit is provided with a gate insulating layer, the gate insulating layer is provided with a gate regulation and control electrode, and the thicknesses of the gate insulating layers corresponding to the red light-emitting unit, the green light-emitting unit and the blue light-emitting unit are gradually reduced in sequence; the anode of the light emitting unit is connected with the drain electrode of the thin film transistor switch, the drain electrode of the thin film transistor switch is further connected with the grid electrode of the amplification field effect transistor, the drain electrode of the amplification field effect transistor is connected with the grid electrode regulation and control electrode, and the source electrode of the amplification field effect transistor is connected to the first regulation and control voltage source. According to the invention, the grid regulation and control structure can be simplified, and the independence of grid voltage regulation and control of each light-emitting unit is ensured.

Description

Technical Field

[0001] The invention relates to the field of optoelectronic display, and in particular to a full-color gate-regulated light-emitting device with a shared gate voltage. Background Art

[0002] The light-emitting devices in optoelectronic displays are an important component of display devices. They present images or information by emitting light. The light-emitting principle of many light-emitting devices is based on the fact that after power is turned on, electrons and holes combine in the light-emitting layer to form excitons, and when the excitons recombine, they release energy and emit light, such as QLED (quantum dot light-emitting diodes) and OLED (organic light-emitting diodes). These light-emitting devices have the advantages of rich color performance, high contrast, fast response speed, wide viewing angle, energy saving and environmental protection. The luminous efficiency or luminous brightness of these light-emitting devices is greatly affected by the carrier recombination process. Different functional layers and quantum dots are usually used to obtain the optimal device efficiency. This experimental process requires a lot of time, materials and labor costs. Therefore, gate regulation has emerged. Through gate regulation, a built-in electric field can be constructed in these light-emitting devices to achieve the regulation of carrier mobility and the regulation of luminous efficiency, which helps to improve the luminous efficiency.

[0003] Existing integrated light emitting device devices generally use one-to-one gate control, that is, one control voltage controls only one light emitting diode. However, when there are a large number of light emitting diodes and they are integrated in the same device, the gate control circuit integration becomes bloated and complicated, resulting in a waste of resources and making the gate control more cumbersome. Summary of the invention

[0004] The applicant has found through research that: by using the similar gate voltages required by light-emitting diodes of the same color, light-emitting diodes of the same color can share the same gate voltage, which can effectively reduce the gate voltage sources. However, it cannot be reduced to one, and once the same gate voltage is shared, adaptive gate voltage adjustment cannot be achieved according to the change of individual grayscale values. Therefore, reducing the number of gate voltage sources and precise regulation have a conflict.

[0005] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is to provide a full-color gate-regulated light-emitting device with a common gate voltage, aiming to simplify the gate regulation structure and ensure the independence of the gate voltage regulation of each light-emitting unit.

[0006] To achieve the above-mentioned purpose, the present invention discloses a full-color gate-regulated light-emitting device with a common gate voltage, wherein the full-color gate-regulated light-emitting device comprises: a plurality of light-emitting units arranged in rows and columns, wherein the light-emitting units comprise an anode, a light-emitting functional layer, and a cathode, and the light-emitting units are divided into red light-emitting units, green light-emitting units, and blue light-emitting units according to the light-emitting colors of the light-emitting functional layers; a gate insulating layer is arranged on the anode and / or the cathode side of the light-emitting unit, a gate regulating electrode is arranged on the gate insulating layer, and the thickness of the gate insulating layer corresponding to the red light-emitting unit, the green light-emitting unit, and the blue light-emitting unit decreases in sequence; each of the light-emitting units corresponds to a thin film transistor A switch and an amplifying field effect transistor, the anode of the light-emitting unit is connected to the drain of the thin film transistor switch, the source of the thin film transistor switch is connected to a data lead for controlling the brightness of the light-emitting unit, the gate of the thin film transistor switch is connected to a scanning lead for controlling the strobing of the thin film transistor switch, the drain of the thin film transistor switch is also connected to the gate of the amplifying field effect transistor, the drain of the amplifying field effect transistor is connected to the gate regulating electrode, and the source of the amplifying field effect transistor is connected to a first regulating voltage source; wherein the initial luminous efficiencies of the red light-emitting unit, the green light-emitting unit and the blue light-emitting unit decrease in sequence;

[0007] When the full-color gate-regulated light-emitting device is gate-regulated, the first regulating voltage source applies a first potential to make the source input voltages of each of the amplifying field effect transistors the same, and the driving voltage generated by the data lead changes the carrier concentration and conductivity in the channel of the amplifying field effect transistor, thereby controlling the drain current of the amplifying field effect transistor, and then making the regulating gate voltage of the gate regulating electrode adapt to the grayscale value corresponding to the driving voltage; different thicknesses of the gate insulating layer enable the regulating gate voltage to construct electric fields of different intensities to regulate the mobility of the carriers in the corresponding light-emitting unit and adjust the luminous efficiency of the light-emitting unit; wherein, the smaller the thickness of the gate insulating layer, the greater the constructed electric field strength, and the greater the improved luminous efficiency.

[0008] Optionally, when the initial luminous efficiencies of the red light-emitting unit, the blue light-emitting unit and the green light-emitting unit decrease successively, the thicknesses of the gate insulating layers corresponding to the red light-emitting unit, the blue light-emitting unit and the green light-emitting unit decrease successively.

[0009] Optionally, the drain of the thin film transistor switch is also connected to an energy storage capacitor, which is used to charge when the data lead is driven and discharge when the driving ends, so that the light-emitting unit that originally emits light continues to emit light, thereby extending the light-emitting time.

[0010] Optionally, the adjacent red light-emitting unit, the green light-emitting unit and the blue light-emitting unit constitute a light-emitting pixel, and the light-emitting pixel presents a required color according to the brightness of the corresponding red light-emitting unit, the green light-emitting unit and the blue light-emitting unit.

[0011] Optionally, one end of the gate control electrode is connected to the drain of the amplifying field effect transistor, and the other end of the gate control electrode is grounded.

[0012] Optionally, the light-emitting unit is a quantum dot light-emitting diode, and the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer.

[0013] Optionally, the light-emitting unit is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

[0014] Optionally, the light-emitting unit sets the gate insulating layer on the anode and / or the cathode according to the type of carriers in the light-emitting functional layer, and sets the gate regulating electrode on the gate insulating layer.

[0015] Optionally, the thin film transistor switch and the amplifying field effect transistor both include a source, a gate, a drain, an active layer and an insulating layer.

[0016] Beneficial effects of the present invention: 1. The present invention has different gate insulating layer thicknesses according to the luminous efficiency that needs to be improved for light-emitting units of different colors. Different gate insulating layer thicknesses can enable the same regulated gate voltage to construct electric fields of different intensities to regulate the mobility of carriers in the corresponding light-emitting unit and adjust the luminous efficiency of the light-emitting unit. When the initial luminous efficiency of the light-emitting unit is lower and the luminous efficiency that needs to be improved is greater, a thinner gate insulating layer thickness can be set to construct an electric field with a stronger intensity to regulate the mobility of carriers in the corresponding light-emitting unit, thereby achieving a greater improvement in luminous efficiency. In the present invention, the luminous efficiency that needs to be improved for the red, green, and blue light-emitting units increases, and the corresponding gate insulating layer thickness decreases, so that the actual improvement in the luminous efficiency of the red, green, and blue light-emitting units increases to meet the demand. 2. The drain of the thin film transistor switch of the present invention is also connected to the gate of the amplifying field effect transistor, and the drain of the amplifying field effect transistor is connected to the gate control electrode; the driving voltage generated by the data lead changes the carrier concentration and conductivity in the channel of the amplifying field effect transistor, thereby controlling the drain current of the amplifying field effect transistor, so that the control gate voltage of the gate control electrode is adapted to the grayscale value corresponding to the driving voltage. The present invention further adjusts each gate voltage through the driving voltage, and then achieves adaptive gate voltage adjustment according to the change of the individual grayscale value, so that the gate voltage regulation is more accurate and energy saving.

[0017] In summary, the present invention simplifies the gate control structure and ensures the independence of the gate voltage control of each light-emitting unit, thereby simplifying the structure of the light-emitting device and effectively avoiding energy waste. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the specific structure of a full-color gate-controlled light-emitting device with a shared gate voltage provided by a specific embodiment of the present invention;

[0019] Figure 2 It is a schematic diagram of the circuit connection structure of a full-color gate-controlled light-emitting device with a common gate voltage provided by a specific embodiment of the present invention;

[0020] Figure 3 is a structural schematic diagram of a light-emitting unit provided by a specific embodiment of the present invention;

[0021] Figure 4 It is a schematic diagram of the circuit connection structure of a full-color gate-controlled light-emitting device with a common gate voltage provided by another specific embodiment of the present invention;

[0022] Figure 5 It is a schematic diagram of a partial top view structure of connections in a full-color gate-regulated light-emitting device with a shared gate voltage provided by a specific embodiment of the present invention. DETAILED DESCRIPTION

[0023] The present invention discloses a full-color gate-regulated light-emitting device driving method with a shared gate voltage. Those skilled in the art can refer to the content of this article and appropriately improve the technical details for implementation. It should be particularly noted that all similar substitutions and modifications are obvious to those skilled in the art, and they are all deemed to be included in the present invention. The method and application of the present invention have been described through preferred embodiments, and relevant personnel can obviously modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit and scope of the present invention to implement and apply the technology of the present invention.

[0024] According to the applicant's research: existing light-emitting device integrated equipment generally performs gate control through one-to-one, that is, one control voltage only controls one light-emitting diode. However, when the number of light-emitting diodes is large and integrated in the same device, the gate control circuit integration will become bloated and complicated, resulting in a waste of resources and making the gate control more cumbersome. Taking advantage of the similar control gate voltages required for light-emitting diodes of the same color, light-emitting diodes of the same color can share the same control gate voltage, which can effectively reduce the control gate voltage source. However, it cannot be reduced to one, and once the same control gate voltage is shared, it is impossible to achieve adaptive gate voltage adjustment according to changes in individual grayscale values. Therefore, there is a conflict between reducing the number of gate voltage sources and precise control.

[0025] Therefore, the embodiment of the present invention provides a full-color gate-controlled light-emitting device with a common gate voltage, such as Figures 1 to 5 As shown, the full-color gate-controlled light-emitting device includes: a plurality of light-emitting units 101 arranged in rows and columns, the light-emitting unit 101 includes an anode 102, a light-emitting functional layer 103, and a cathode 104, and the light-emitting unit 101 is divided into a red light-emitting unit, a green light-emitting unit, and a blue light-emitting unit according to the light-emitting color of the light-emitting functional layer 103; a gate insulating layer 105 is arranged on the anode 102 and / or cathode 104 side of the light-emitting unit 101, and a gate control electrode 106 is arranged on the gate insulating layer 105, and the thickness of the gate insulating layer 105 corresponding to the red light-emitting unit, the green light-emitting unit, and the blue light-emitting unit decreases in sequence; each light-emitting unit 101 corresponds to a thin film The transistor switch 107 and an amplifying field effect transistor 108, the anode 102 of the light-emitting unit 101 is connected to the drain of the thin film transistor switch 107, the source of the thin film transistor switch 107 is connected to the data lead 109 for controlling the brightness of the light-emitting unit 101, the gate of the thin film transistor switch 107 is connected to the scanning lead 110 for controlling the selection of the thin film transistor switch 107, the drain of the thin film transistor switch 107 is also connected to the gate of the amplifying field effect transistor 108, the drain of the amplifying field effect transistor 108 is connected to the gate control electrode 106, and the source of the amplifying field effect transistor 108 is connected to the first control voltage source 111.

[0026] Among them, the initial luminous efficiencies of the red light-emitting unit, the green light-emitting unit, and the blue light-emitting unit decrease in sequence.

[0027] Figure 1 It is a schematic diagram of the structure of the red, green and blue light-emitting devices in the full-color gate-controlled light-emitting device with a common gate voltage in an embodiment of the present invention. The drain of the thin-film transistor switch 107 is connected to the anode 102 through a metal lead frame, and the anode 102 is connected to the gate of the amplifying field-effect transistor 108 through a metal lead. Because both are connected to the anode 102, the drain of the thin-film transistor switch 107 is connected to the gate of the amplifying field-effect transistor 108, and the drain of the amplifying field-effect transistor 108 is connected to the gate control electrode 106 through a metal lead. Figure 2 It is a schematic diagram of the circuit connection structure of a light-emitting pixel. Figure 4 This is a schematic diagram of the circuit connection structure of two luminous pixels. Figure 4 It is explained that multiple light-emitting pixels can also be connected to the same control voltage source. A light-emitting pixel includes a group of red light-emitting units, green light-emitting units and blue light-emitting units. Figures 1 to 5 In FIG. 1 , S, G, and D are abbreviations for the source, gate, and drain of the thin film transistor switch 107 and the amplifying field effect transistor 108. The gates of the thin film transistor switch 107 and the amplifying field effect transistor 108 are not the gate control electrode 106.

[0028] Figure 5 In the figure, 501 is an insulating layer of the amplifying field effect transistor 108, 502 is an active layer of the amplifying field effect transistor 108, 503 is a first metal electrode lead, 504 is a second metal electrode lead, and 505 is a through hole. The drain of the amplifying field effect transistor 108 is connected to the gate control electrode 106 through the first metal electrode lead 503, and the anode 102 enters the through hole 505 through the second metal electrode lead 504 and is connected to the gate of the amplifying field effect transistor 108.

[0029] When the full-color gate-regulated light-emitting device is gate-regulated, the first regulating voltage source 111 applies a first potential to make the source input voltages of each amplifying field effect transistor 108 the same, and the driving voltage generated by the data lead 109 changes the carrier concentration and conductivity in the channel of the amplifying field effect transistor 108, thereby controlling the drain current of the amplifying field effect transistor 108, and further making the regulating gate voltage of the gate regulating electrode 106 adapt to the grayscale value corresponding to the driving voltage; different thicknesses of the gate insulating layer 105 enable the regulating gate voltage to construct electric fields of different intensities to regulate the mobility of the carriers in the corresponding light-emitting unit 101 and adjust the luminous efficiency of the light-emitting unit 101.

[0030] The smaller the thickness of the gate insulating layer 105 is, the greater the intensity of the constructed electric field is, and the greater the improved luminous efficiency is.

[0031] In this specific embodiment, Figure 2 As shown, the light-emitting units 101 each include an anode 102 , a light-emitting functional layer 103 , and a cathode 104 , and each cathode 104 is provided with a gate insulating layer 105 and a gate regulating electrode 106 .

[0032] It should be noted that in general QLED or OLED, the red light-emitting unit usually has the highest photoelectric conversion efficiency (luminous efficiency), and its luminous efficiency can be as high as 90-100%. The photoelectric conversion efficiency of the green light-emitting unit is second. Its luminous efficiency is generally in the range of 20-30%, which is significantly lower than that of the red light-emitting unit. The blue light-emitting unit has the lowest photoelectric conversion efficiency among the three. Its luminous efficiency is approximately between 10-20%, which is much lower than the red light-emitting unit, and slightly lower than the green light-emitting unit but the difference is not large. Therefore, in the light-emitting pixel point, the blue light-emitting unit needs to increase the efficiency the most, the green light-emitting unit is second, and the red light-emitting unit is the smallest. The thickness of the gate insulating layer 105 is inversely proportional to the strength of the constructed electric field. Therefore, by decreasing the thickness of the gate insulating layer 105 corresponding to the red light-emitting unit, the green light-emitting unit and the blue light-emitting unit in sequence, it can be ensured that the same gate voltage constitutes an electric field of different strengths, so that the electric field of different strengths can be used to regulate the mobility of the carriers in the corresponding light-emitting unit 101 and adjust the luminous efficiency of the light-emitting unit 101. In the embodiment of the present invention, the luminous efficiency of the red light emitting unit, the green light emitting unit and the blue light emitting unit increases gradually as the thickness of the gate insulating layer 105 decreases.

[0033] It is worth mentioning that in the prior art, if the light-emitting units 101 of different colors are directly controlled by the same gate voltage, due to the different initial luminous efficiencies of the light-emitting units 101, either the improved luminous efficiency will show a huge difference, or the gate voltage will be too large, resulting in energy waste.

[0034] In addition, the embodiment of the present invention can determine the applied control gate voltage according to the driving voltage by setting the amplifying field effect transistor 108, and the driving voltage also determines the grayscale value of the light-emitting unit 101, so that the embodiment of the present invention can adjust the gate voltage adaptively according to the change of the grayscale value. In the embodiment of the present invention, multiple light-emitting units 101 can share a control voltage source and can also adjust the gate voltage adaptively according to the change of the grayscale value, which can effectively save energy. The conventional shared control voltage source structure cannot do this.

[0035] The embodiment of the present invention effectively combines the two advantages of simplified gate control structure and independent gate voltage control, so that the light-emitting device integration is simpler and more energy-saving during use, thereby achieving a better display effect.

[0036] In another specific embodiment, when the initial luminous efficiencies of the red light emitting unit, the blue light emitting unit and the green light emitting unit decrease in sequence, the thicknesses of the gate insulating layer 105 corresponding to the red light emitting unit, the blue light emitting unit and the green light emitting unit decrease in sequence.

[0037] It should be noted that in the light-emitting unit 101 made of certain materials, the initial luminous efficiency of the blue light-emitting unit will be greater than the initial luminous efficiency of the green light-emitting unit. Therefore, the thickness of the gate insulating layer 105 corresponding to the red light-emitting unit, the blue light-emitting unit and the green light-emitting unit needs to be reduced in sequence to ensure that the improved luminous efficiency remains balanced.

[0038] In this specific embodiment, the drain of the thin film transistor switch 107 is also connected to a storage capacitor 112, which is used to charge when the data lead 109 is driven and discharge when the drive stops, so that the originally luminous light-emitting unit 101 continues to emit light, thereby extending the light-emitting time.

[0039] It should be noted that, in actual applications, if the light emitting unit 101 emits light for too short a time, the image quality will be reduced. Therefore, by adding the energy storage capacitor 112 to prolong the light emitting state, the image quality can be effectively improved.

[0040] In this specific embodiment, adjacent red light-emitting units, green light-emitting units and blue light-emitting units constitute a light-emitting pixel, and the light-emitting pixel presents a required color according to the brightness of its corresponding red light-emitting unit, green light-emitting unit and blue light-emitting unit.

[0041] In this specific embodiment, one end of the gate control electrode 106 is connected to the drain of the amplifying field effect transistor 108, and the other end of the gate control electrode 106 is grounded.

[0042] In this specific embodiment, the light-emitting unit 101 is a quantum dot light-emitting diode, and the light-emitting functional layer 103 includes a hole transport layer, a quantum dot light-emitting layer, and an electron transport layer.

[0043] It should be noted that Quantum Dot Light Emitting Diodes (QLED) is a new type of nano-photoelectric material based on quantum dot technology. Its light-emitting principle is achieved through the electron transition of semiconductor quantum dots. Compared with traditional LEDs and OLEDs, QLEDs have higher color saturation, lower voltage drive, higher brightness and longer service life.

[0044] In another specific embodiment, the light-emitting unit 101 is an organic light-emitting diode, and the light-emitting functional layer 103 includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer.

[0045] It should be noted that an organic light-emitting diode (OLED) is a semiconductor device based on organic materials and has the advantages of power saving, fast response speed and simple preparation.

[0046] In this specific embodiment, the light-emitting unit 101 is provided with a gate insulating layer 105 on the anode 102 and / or the cathode 104 according to the carrier types in the light-emitting functional layer 103 , and a gate control electrode 106 is provided on the gate insulating layer 105 .

[0047] For example, if the majority of carriers in the photo-functional layer are electrons, a gate control electrode 106 is disposed on the cathode 104 side and a positive voltage is applied to the gate control electrode 106 .

[0048] In this specific embodiment, Figure 1 As shown, the thin film transistor switch 107 and the amplifying field effect transistor 108 each include a source, a gate, a drain, an active layer and an insulating layer.

[0049] In the embodiment of the present invention, different gate insulating layer 105 thicknesses are set according to the luminous efficiency that needs to be improved for different color light-emitting units 101. Different gate insulating layer 105 thicknesses can make the same regulated gate voltage construct electric fields of different strengths to regulate the mobility of carriers in the corresponding light-emitting unit 101 and adjust the luminous efficiency of the light-emitting unit 101. When the initial luminous efficiency of the light-emitting unit 101 is lower and the luminous efficiency that needs to be improved is greater, the thickness of the gate insulating layer 105 can be set to be thinner to construct an electric field with a stronger intensity to regulate the mobility of carriers in the corresponding light-emitting unit 101, thereby achieving a greater improvement in luminous efficiency. In the embodiment of the present invention, the luminous efficiency that needs to be improved for the red, green, and blue light-emitting units 101 increases, and the corresponding gate insulating layer 105 thickness decreases, so that the actual luminous efficiency of the red, green, and blue light-emitting units 101 increases to meet the demand.

[0050] The drain of the thin film transistor switch 107 of the embodiment of the present invention is also connected to the gate of the amplifying field effect transistor 108, and the drain of the amplifying field effect transistor 108 is connected to the gate control electrode 106; the driving voltage generated by the data lead 109 changes the carrier concentration and conductivity in the channel of the amplifying field effect transistor 108, thereby controlling the drain current of the amplifying field effect transistor 108, so that the control gate voltage of the gate control electrode 106 is adapted to the grayscale value corresponding to the driving voltage. The embodiment of the present invention further adjusts each gate voltage through the driving voltage, and then achieves adaptive gate voltage adjustment according to the change of the individual grayscale value, so that the gate voltage regulation is more accurate and energy is saved.

[0051] In summary, the embodiments of the present invention simplify the gate control structure and ensure that the gate voltage control of each light-emitting unit 101 is independent, thereby simplifying the structure of the light-emitting device and effectively avoiding energy waste.

[0052] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0053] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0054] The above are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A full-color gate-regulated light-emitting device with a common gate voltage, characterized in that: The full-color gate-regulated light-emitting device comprises: a plurality of light-emitting units arranged in rows and columns, wherein the light-emitting units comprise an anode, a light-emitting functional layer, and a cathode, and the light-emitting units are divided into a red light-emitting unit, a green light-emitting unit, and a blue light-emitting unit according to the light-emitting color of the light-emitting functional layer; a gate insulating layer is arranged on the anode and / or the cathode side of the light-emitting unit, and a gate regulating electrode is arranged on the gate insulating layer, and the thickness of the gate insulating layer corresponding to the red light-emitting unit, the green light-emitting unit, and the blue light-emitting unit decreases in sequence; each of the light-emitting units corresponds to a thin-film transistor switch and an amplifying field-effect transistor, and the The anode of the light-emitting unit is connected to the drain of the thin-film transistor switch, the source of the thin-film transistor switch is connected to a data lead for controlling the brightness of the light-emitting unit, the gate of the thin-film transistor switch is connected to a scanning lead for controlling the strobing of the thin-film transistor switch, the drain of the thin-film transistor switch is also connected to the gate of the amplifying field-effect transistor, the drain of the amplifying field-effect transistor is connected to the gate regulating electrode, and the source of the amplifying field-effect transistor is connected to a first regulating voltage source; wherein the initial luminous efficiencies of the red light-emitting unit, the green light-emitting unit, and the blue light-emitting unit are sequentially reduced; When the full-color gate-regulated light-emitting device is gate-regulated, the first regulating voltage source applies a first potential to make the source input voltages of each of the amplifying field effect transistors the same, and the driving voltage generated by the data lead changes the carrier concentration and conductivity in the channel of the amplifying field effect transistor, thereby controlling the drain current of the amplifying field effect transistor, and then making the regulating gate voltage of the gate regulating electrode adapt to the grayscale value corresponding to the driving voltage; different thicknesses of the gate insulating layer enable the regulating gate voltage to construct electric fields of different intensities to regulate the mobility of the carriers in the corresponding light-emitting unit and adjust the luminous efficiency of the light-emitting unit; wherein, the smaller the thickness of the gate insulating layer, the greater the constructed electric field strength, and the greater the improved luminous efficiency.

2. The full-color gate-regulated light-emitting device with a common gate voltage according to claim 1, characterized in that: When the initial luminous efficiencies of the red light emitting unit, the blue light emitting unit, and the green light emitting unit decrease in sequence, the thicknesses of the gate insulating layers corresponding to the red light emitting unit, the blue light emitting unit, and the green light emitting unit decrease in sequence.

3. The full-color gate-regulated light-emitting device with a common gate voltage according to claim 1, characterized in that: The drain of the thin film transistor switch is also connected to an energy storage capacitor, which is used to charge when the data lead is driven and discharge when the driving ends, so that the light-emitting unit that originally emits light continues to emit light, thereby extending the light-emitting time.

4. The full-color gate-regulated light-emitting device with a common gate voltage according to claim 1, characterized in that: The adjacent red light-emitting unit, the green light-emitting unit and the blue light-emitting unit constitute a light-emitting pixel, and the light-emitting pixel presents a required color according to the brightness of the corresponding red light-emitting unit, the green light-emitting unit and the blue light-emitting unit.

5. The full-color gate-regulated light-emitting device with a common gate voltage according to claim 1, characterized in that: One end of the gate control electrode is connected to the drain of the amplifying field effect transistor, and the other end of the gate control electrode is grounded.

6. The full-color gate-regulated light-emitting device with a common gate voltage according to claim 1, characterized in that: The light-emitting unit is a quantum dot light-emitting diode, and the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer.

7. The full-color gate-regulated light-emitting device with a common gate voltage according to claim 1, characterized in that: The light-emitting unit is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

8. The full-color gate-regulated light-emitting device with a common gate voltage according to claim 1, characterized in that: The light-emitting unit is provided with the gate insulating layer on the anode and / or the cathode according to the carrier types in the light-emitting functional layer, and the gate regulating electrode is provided on the gate insulating layer.

9. The full-color gate-controlled light-emitting device with a common gate voltage according to claim 1, characterized in that: The thin film transistor switch and the amplifying field effect transistor each include a source electrode, a gate electrode, a drain electrode, an active layer and an insulating layer.

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