Honeycomb flexible thermoelectric power generation sheet

Abstract

The application discloses a honeycomb-shaped flexible thermoelectric power generation sheet, which is characterized in that a plurality of hexagonal holes are distributed on a flexible substrate at intervals; at least one N / P type thermoelectric semiconductor is fixedly installed in each hexagonal hole; the cold end of the N / P type thermoelectric semiconductor is flush with the upper end surface of the flexible substrate, and the hot end is flush with the lower end surface of the flexible substrate; each hexagonal hole and the N / P type thermoelectric semiconductor installed therein form a honeycomb-shaped structure; the plurality of N / P type thermoelectric semiconductors are connected in series in the order of N-P-N-P, the two hot ends are connected through a conductive sheet, and the two cold ends are connected through a wire; and the conductive sheet is formed by solidification of a conductive solution. The honeycomb-shaped flexible thermoelectric power generation sheet is inspired by the honeycomb-shaped structure in nature, adopts the structure of wrapping N / P type thermoelectric semiconductors in a flexible substrate, provides stronger flexibility through the flexible substrate, simultaneously has the power generation advantages of rigid semiconductors, and realizes efficient capture of heat energy in the environment.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of new energy energy collection, and particularly relates to a honeycomb-shaped flexible thermoelectric power generation sheet. BACKGROUND

[0002] The Internet of Things technology has significant significance in improving efficiency, reducing cost and improving life quality, but at the same time, the Internet of Things technology is faced with development bottlenecks such as long-time and continuous energy stable supply. At present, most of the sensing monitoring nodes applied in the Internet of Things technology still need to be charged artificially, or are directly replaced with new nodes after one-time power consumption, and it is difficult to achieve self-determined long-time stable power supply. Using the widely existing energy in the environment to power these sensing nodes provides a new idea of active energy capture. As a ubiquitous energy form, heat energy, especially common in human society, such as cars, electronic devices, building walls, etc., is a very ideal energy source, and thermoelectric power generation technology is therefore highly concerned.

[0003] The rigid thermoelectric power generation sheet has high power generation efficiency and provides more energy, but the application scene is limited by rigidity; the thermoelectric power generation sheet based on a textile base or produced by two-dimensional materials and thin film materials is flexible, but has high production cost and low power generation efficiency. Combining the characteristics of the rigid thermoelectric power generation sheet, making it flexible, expanding the application scene, and making it have the advantages of flexibility and strong power generation capacity are practical and significant directions to overcome. SUMMARY

[0004] The application provides a honeycomb-shaped flexible thermoelectric power generation sheet, which is inspired by the honeycomb structure in nature, adopts a structure of wrapping N / P type thermoelectric semiconductors in a flexible base, provides stronger flexibility through the flexible base, simultaneously has the power generation advantages of rigid semiconductors, and realizes efficient capture of heat energy in the environment.

[0005] In order to achieve the above purpose, the application adopts the following specific technical solutions:

[0006] A honeycomb-shaped flexible thermoelectric power generation sheet, which comprises a flexible base, N / P type thermoelectric semiconductors, an output positive electrode, an output negative electrode, a wire and a conductive sheet.

[0007] The flexible base is spaced apart and has a plurality of hexagonal holes; the N / P type thermoelectric semiconductors are in a cuboid structure; at least one N / P type thermoelectric semiconductor is fixedly installed in each hexagonal hole; the cold end of the N / P type thermoelectric semiconductor is flush with the upper end surface of the flexible base, and the hot end is flush with the lower end surface of the flexible base; each hexagonal hole and the N / P type thermoelectric semiconductor installed therein form a honeycomb structure for protecting the N / P type thermoelectric semiconductor when the flexible base is bent and deformed.

[0008] A plurality of the N / P type thermoelectric semiconductors are connected in series in the order of N-P-N-P, two hot ends are connected by a conductive sheet, and two cold ends are connected by a wire; the conductive sheet is formed by solidification of a conductive solution; in the plurality of the N / P type thermoelectric semiconductors connected in series, the hot end of the N / P type thermoelectric semiconductor at the head is fixedly provided with the output positive electrode, and the hot end of the N / P type thermoelectric semiconductor at the tail is fixedly provided with the output negative electrode.

[0009] Further, the wire is in the shape of "Ω", has the functions of flexible extension and conduction, and enhances the heat dissipation effect of the cold end by enhancing the heat exchange capacity with air.

[0010] Further, the wire is a silver-plated copper wire.

[0011] Further, the N / P type thermoelectric semiconductor is made of a rigid thermoelectric material with a high ZT value at room temperature.

[0012] Further, the output positive electrode and the output negative electrode are copper sheets.

[0013] Further, the flexible substrate is in the overall structure of a cuboid.

[0014] Two N / P type thermoelectric semiconductors are arranged in each hexagonal hole.

[0015] Further, the forming process of the conductive sheet is as follows:

[0016] A conductive solution is uniformly applied to the hot end of the N / P type thermoelectric semiconductor and between the hot ends by using a screen printing technique.

[0017] After drying, the conductive solution is uniformly applied to the surface of the conductive solution again, and the application is repeated for multiple times, so that the conductive solution solidified on the hot end has a certain thickness.

[0018] Further, the conductive sheet is in a serpentine structure, which enhances the tensile resistance of the solidified conductive solution.

[0019] Compared with the prior art, the technical scheme of the present application has the following beneficial effects:

[0020] 1. The honeycomb-shaped flexible thermoelectric sheet of the present application uses a flexible substrate to wrap a plurality of N / P type thermoelectric semiconductors, and the structure for power generation uses rigid N / P type thermoelectric semiconductors, which inherits the advantages of good power generation effect of rigid thermoelectric sheets; the introduction of the honeycomb structure into the flexible substrate can reduce the stress impact on the rigid semiconductors when they are flexed, and the flexible substrate has a better protective effect on the rigid semiconductors embedded therein; compared with ordinary flexible thermoelectric sheets, the present application can have better flexibility while having higher power generation effect.

[0021] 2, The cold end and the hot end of the N / P type thermoelectric semiconductor of the honeycomb-shaped flexible thermoelectric power generation sheet adopt a naked mode, and directly contact with air; the hot end adopts a silk screen printing technology, and is connected by a conductive sheet formed by a solidified conductive solution; the cold end is connected by an omega-shaped wire; when wearable application is performed, the hot end can directly contact with a human body heat source, and the heat loss of indirect heat transfer between substrates is reduced; the cold end can fully utilize the heat dissipation when the wire contacts with air, the use of an additional heat dissipation sheet is reduced, and better heat dissipation effect is simultaneously achieved, the temperature difference gradient that can be achieved by the cold end and the hot end is further improved, and therefore, the power generation effect is strengthened, and the application in a wearable scene is more suitable. Compared with a common flexible thermoelectric power generation sheet, the honeycomb-shaped flexible thermoelectric power generation sheet has better power generation effect. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 It is a schematic diagram of a three-dimensional structure of the honeycomb-shaped flexible thermoelectric power generation sheet.

[0023] Figure 2 It is a schematic diagram of a connection structure of the N / P type thermoelectric semiconductor.

[0024] Figure 3 It is a schematic diagram of a hot end connection structure of the N / P type thermoelectric semiconductor.

[0025] Among them, 1 is a flexible substrate, 2 is an N / P type thermoelectric semiconductor, 3 is a hexagonal hole, 4 is an output positive electrode, 5 is an output negative electrode, 6 is a wire, 7 is a conductive sheet, and 21 is a cold end. DETAILED DESCRIPTION

[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the present application.

[0027] As Figure 1 , Figure 2 and Figure 3 The embodiment provides a honeycomb-shaped flexible thermoelectric power generation sheet, which comprises a flexible substrate 1, an N / P type thermoelectric semiconductor 2, an output positive electrode 4, an output negative electrode 5, a wire 6 and a conductive sheet 7; in the embodiment, the flexible substrate 1 and the N / P type thermoelectric semiconductor 2 are both cuboid structures, 2 N / P type thermoelectric semiconductors 2 are installed in each hexagonal hole 3, and a total of 10 N / P type thermoelectric semiconductors 2 are taken as examples for description.

[0028] The flexible substrate 1 is provided with a plurality of hexagonal holes 3 at intervals to form a hollow structure. The flexible substrate 1 is solidified and formed according to the honeycomb structure and can be formed of flexible resin or rubber material. At least one N / P type thermoelectric semiconductor 2 is fixedly installed in each hexagonal hole 3. Figure 1 As shown, the hexagonal hole 3 can be a regular hexagonal hole. From left to right, the side length of the hexagonal hole 3 is the same as the width of the N / P-type thermoelectric semiconductor 2. The cold end 21 of the N / P-type thermoelectric semiconductor 2 is flush with the upper end surface of the flexible substrate 1, and the hot end is flush with the lower end surface of the flexible substrate 1, so that the upper and lower end surfaces of the N / P-type thermoelectric semiconductor 2 can be exposed to the air, which also facilitates the electrical connection between the cold end 21 and the hot end. The N / P-type thermoelectric semiconductor 2 has a columnar structure with a rectangular cross-section and can be partially wrapped by the flexible substrate 1, effectively fixing the multiple N / P-type thermoelectric semiconductors 2 in the flexible substrate 1. Each hexagonal hole 3 and the N / P-type thermoelectric semiconductor 2 installed therein form a honeycomb structure for protecting the N / P-type thermoelectric semiconductor 2 when the flexible substrate 1 is bent and deformed. The N / P-type thermoelectric semiconductor 2 is made of a rigid thermoelectric material with a high ZT value at room temperature, fully utilizing the high thermoelectric power generation performance in the flexible device.

[0029] like Figure 2 and Figure 3 As shown, multiple N / P-type thermoelectric semiconductors 2 are connected in series in the order of NPNP. The two hot ends are connected by a conductive sheet 7, and the two cold ends 21 are connected by a wire 6. The wire 6 is shaped like an "Ω" to combine flexibility and conductivity, and enhances heat dissipation from the cold ends 21 by increasing heat exchange with the air. The "Ω" shape is a three-dimensional structure that helps enhance heat exchange between the wire 6 and the air, thereby improving heat dissipation from the cold ends 21. The wire 6 can be silver-plated copper wire or other conductive metal wires 6, which can improve the heat dissipation capacity of the cold ends 21 in a limited space. The conductive sheet 7 is formed by solidifying a conductive solution. The conductive sheet 7 can have a serpentine structure, such as an S-shape or a wavy shape, to enhance the tensile strength of the conductive solution after solidification.

[0030] Among the multiple N / P type thermoelectric semiconductors 2 connected in series, the hot end of the N / P type thermoelectric semiconductor 2 at the head end is fixedly mounted with an output positive electrode 4, and the hot end of the N / P type thermoelectric semiconductor 2 at the end end is fixedly mounted with an output negative electrode 5. Both the output positive electrode 4 and the output negative electrode 5 are copper sheets, which are convenient for connecting to external electrical equipment. Figure 2 and Figure 3As shown, in this embodiment, a total of 10 N / P-type thermoelectric semiconductors 2 are arranged in an array in 2 rows and 5 columns to demonstrate the connection relationship. The N / P-type thermoelectric semiconductors 2 at the head and tail ends are both located at the rightmost end and the hot ends are fixedly mounted with electrodes, the two electrodes being an output positive electrode 4 and an output negative electrode 5 respectively; the 5 N / P-type thermoelectric semiconductors 2 in each row of N / P-type thermoelectric semiconductors 2 are all connected in sequence. For the convenience of explanation, the 10 N / P-type thermoelectric semiconductors 2 are named, the N / P-type thermoelectric semiconductor 2 in the upper left corner is defined as the first N / P-type thermoelectric semiconductor, and are sorted from left to right, the N / P-type thermoelectric semiconductor 2 in the upper right corner is defined as the fifth N / P-type thermoelectric semiconductor, the N / P-type thermoelectric semiconductor 2 in the lower left corner is defined as the sixth N / P-type thermoelectric semiconductor, and the N / P-type thermoelectric semiconductor 2 in the lower right corner is defined as the tenth N / P-type thermoelectric semiconductor, wherein: the fifth N / P-type thermoelectric semiconductor is the N / P-type thermoelectric semiconductor at the head end. The tenth N / P type thermoelectric semiconductor is the terminal N / P type thermoelectric semiconductor. The cold ends 21 of the tenth N / P type thermoelectric semiconductor and the ninth N / P type thermoelectric semiconductor, the eighth N / P type thermoelectric semiconductor and the seventh N / P type thermoelectric semiconductor, the sixth N / P type thermoelectric semiconductor and the first N / P type thermoelectric semiconductor, the second N / P type thermoelectric semiconductor and the third N / P type thermoelectric semiconductor, and the fourth N / P type thermoelectric semiconductor and the fifth N / P type thermoelectric semiconductor are connected via an "Ω"-shaped wire 6. The hot ends of the first N / P type thermoelectric semiconductor and the second N / P type thermoelectric semiconductor, the third N / P type thermoelectric semiconductor and the fourth N / P type thermoelectric semiconductor, the sixth N / P type thermoelectric semiconductor and the seventh N / P type thermoelectric semiconductor, and the eighth N / P type thermoelectric semiconductor and the ninth N / P type thermoelectric semiconductor are all connected via a conductive sheet 7. Close contact should be ensured between the wire 6, the conductive sheet 7 and the N / P type thermoelectric semiconductor 2 to reduce thermal resistance and enhance heat dissipation and heat conduction effects.

[0031] The formation process of the above-mentioned conductive sheet 7 is as follows: using screen printing technology to evenly apply conductive solution on the hot end and between the hot ends of the N / P type thermoelectric semiconductor 2; after the conductive solution dries, continue to evenly apply conductive solution on the surface, and repeat the application multiple times so that the conductive solution at the hot end has a certain thickness after solidification, thereby enhancing the connection stability.

[0032] The center of the hexagonal hole 3 is aligned with the center of the N / P type thermoelectric semiconductor 2, so that the honeycomb hexagonal structure can better protect the semiconductor during bending and deformation.

[0033] The honeycomb-shaped flexible thermoelectric power generation sheet wraps a plurality of N / P type thermoelectric semiconductors 2 with a flexible substrate 1, and the structure for power generation adopts rigid N / P type thermoelectric semiconductors 2, which inherits the advantage of good power generation effect of rigid thermoelectric power generation sheet; the honeycomb structure is introduced into the flexible substrate 1, which can reduce the stress impact on the rigid semiconductor when it is flexibly bent, and the flexible substrate 1 has a better protective effect on the rigid semiconductor embedded therein; compared with the ordinary flexible thermoelectric power generation sheet, the honeycomb-shaped flexible thermoelectric power generation sheet has better flexibility and higher power generation effect.

[0034] The cold end and the hot end of the N / P type thermoelectric semiconductor 2 of the honeycomb-shaped flexible thermoelectric power generation sheet are both in a bare mode and directly contact with air; the hot end is connected by the conductive sheet 7 formed by the solidified conductive solution by using the screen printing technology; the cold end 21 is connected by the "Ω" shaped wire 6; when used in wearable applications, the hot end can directly contact with the human body heat source, reducing the heat loss of the indirect heat transfer between the substrates; the cold end 21 can fully utilize the heat dissipation of the wire 6 when it contacts with air, reducing the use of additional heat dissipation sheet, while having a good heat dissipation effect, further improving the temperature difference gradient that can be realized by the cold end and the hot end, thereby enhancing the power generation effect, and being more suitable for the actual application in wearable scenarios. Compared with the ordinary flexible thermoelectric power generation sheet, the honeycomb-shaped flexible thermoelectric power generation sheet has better power generation effect.

[0035] Obviously, those skilled in the art can make various modifications and variations to the embodiments of the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application belong to the scope of the claims of the present application and their equivalent technologies, the present application also intends to include these modifications and variations.

Claims

1. A honeycomb-shaped flexible thermoelectric power generation sheet, characterized by, The flexible substrate, N / P type thermoelectric semiconductor, output positive electrode, output negative electrode, wire and conductive sheet are included. The flexible substrate is spaced apart with a plurality of hexagonal holes; the N / P type thermoelectric semiconductor is in a cuboid structure; at least one N / P type thermoelectric semiconductor is fixedly installed in each hexagonal hole; the cold end of the N / P type thermoelectric semiconductor is flush with the upper end surface of the flexible substrate, and the hot end is flush with the lower end surface of the flexible substrate; each hexagonal hole and the N / P type thermoelectric semiconductor installed therein form a honeycomb structure for protecting the N / P type thermoelectric semiconductor when the flexible substrate is bent and deformed. A plurality of N / P type thermoelectric semiconductors are connected in series in the order of N-P-N-P, the two hot ends are connected by a conductive sheet, and the two cold ends are connected by a wire; the conductive sheet is formed by solidification of a conductive solution; among the series-connected plurality of N / P type thermoelectric semiconductors, the hot end of the N / P type thermoelectric semiconductor at the head end is fixedly installed with the output positive electrode, and the hot end of the N / P type thermoelectric semiconductor at the tail end is fixedly installed with the output negative electrode.

2. The honeycomb-shaped flexible thermoelectric power generation sheet according to claim 1, wherein The wire is in the shape of "Ω", has the functions of flexible extension and conduction, and enhances the heat dissipation effect of the cold end by enhancing the heat exchange capacity with air.

3. The honeycomb-shaped flexible thermoelectric sheet according to claim 2, wherein The wire is a silver-plated copper wire.

4. The honeycomb flexible thermoelectric sheet according to claim 1, wherein The N / P type thermoelectric semiconductor is made of a rigid thermoelectric material with high ZT value at room temperature.

5. The honeycomb flexible thermoelectric sheet according to claim 1, wherein The output positive electrode and the output negative electrode are copper sheets.

6. The honeycomb flexible thermoelectric sheet according to claim 1, wherein The flexible substrate is in a cuboid structure as a whole. Two N / P type thermoelectric semiconductors are installed in each hexagonal hole.

7. The honeycomb flexible thermoelectric sheet according to any one of claims 1 to 6, wherein The conductive sheet is formed by: uniformly applying a conductive solution to the hot end of the N / P type thermoelectric semiconductor and between the hot ends by using a screen printing technique; continuously and uniformly applying the conductive solution to the surface of the dried conductive solution, repeating the application multiple times, so that the conductive solution solidified at the hot end has a certain thickness.

8. The honeycomb flexible thermoelectric sheet according to any one of claims 1 to 6, wherein The conductive sheet is in a serpentine structure, which enhances the tensile resistance of the solidified conductive solution.

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