Multi-plenum gas manifold for substrate processing systems

Abstract

A multi-plenum gas manifold is disclosed that includes a unitary body, a first plenum, and a second plenum. A first plenum is disposed within the unitary body and is configured to distribute or divert a first species of gas to or from one or more substrate processing stations. The first plenum includes a first cavity and a first set of channels extending outwardly from the first cavity. A second plenum chamber is disposed within the unitary body, isolated from the first plenum chamber, and configured to distribute or divert a second species of gas to or from one or more substrate processing stations. The second inflation chamber comprises a second cavity arranged on the radial outer side of the first cavity. A second set of channels extends outwardly from the second cavity.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of U.S. Provisional Application No. 63 / 359,545, filed on July 8, 2022. The entire disclosure of the above application is incorporated herein by reference. Technical Field

[0001] The present disclosure relates to gas transfer and distribution systems for substrate processing tools. Background Art

[0002] The background description provided here is to generally present the context of the present disclosure. To the extent described in this background section, the work of the currently designated inventors, as well as the various aspects of the description that may not qualify as prior art at the time of filing, are neither explicitly nor implicitly admitted as prior art against the present disclosure.

[0003] The substrate processing system can be used to etch, deposit and / or otherwise process a substrate such as a semiconductor wafer. Example processes that can be performed on the substrate include, but are not limited to, a plasma enhanced chemical vapor deposition (PECVD) process, a physical vapor deposition (PVD) process, an ion implantation process and / or other etching, deposition and cleaning processes. For example, during a deposition process, the substrate can be arranged on an electrostatic chuck (ESC) in the substrate processing system, and a thin film can be deposited on the substrate. Summary of the invention

[0004] A multi-plenum gas manifold is disclosed, which includes a monolithic body, a first plenum, and a second plenum. The first plenum is arranged in the monolithic body and is configured to distribute a first type of gas to one or more substrate processing stations or transfer the first type of gas from one or more substrate processing stations. The first plenum includes a first cavity and a first group of channels extending outward from the first cavity. The second plenum is arranged in the monolithic body, isolated from the first plenum, and is configured to distribute a second type of gas to one or more substrate processing stations or transfer the second type of gas from one or more substrate processing stations. The second plenum includes a second cavity arranged radially outside the first cavity. The second group of channels extends outward from the second cavity.

[0005] In other features, the first cavity and the second cavity are circular. In other features, the first cavity and the second cavity are concentric cavities. In other features, at least one of the first cavity and the second cavity is not circular.

[0006] In other features, the multi-plenum gas manifold further comprises one or more caps configured to enclose the first cavity and the second cavity. In other features, the one or more caps include: A first cap configured to enclose a first cavity; and a second cap configured to enclose a second cavity. In other features, the first cap is thicker than the second cap. In other features, the first cavity is deeper than the second cavity.

[0007] In other features, the volume of the first cavity is equal to the volume of the second cavity. In other features, the volume of the first cavity is different from the volume of the second cavity.

[0008] In other features, the first set of channels includes a suction channel and a transfer channel. The suction channel draws the first type of gas into the first cavity. The first cavity guides the first type of gas from the suction channel to the transfer channel.

[0009] In other features, the first set of channels includes source channels and distribution channels. The distribution channels distribute the first type of gas from the first cavity. The first cavity receives the first type of gas from the source channels and distributes the first type of gas to the distribution channels.

[0010] In other features, the second set of channels includes a suction channel and a transfer channel. The suction channel draws the second type of gas into the second cavity. The second cavity guides the second type of gas from the suction channel to the transfer channel.

[0011] In other features, the second set of channels includes source channels and distribution channels. The distribution channels distribute the second type of gas from the second cavity. The second cavity receives the second type of gas from the source channel and distributes the second type of gas to the distribution channels. In other features, the second set of channels is at least one of: offset from the first set of channels in an axial or vertical direction.

[0012] In other features, the multi-plenum gas manifold further includes a third plenum isolated from the first and second plenums and including a third cavity and a third set of channels. In other features, the third cavity is radially adjacent to a portion of the first cavity and axially adjacent to a portion of the second cavity. In other features, the third set of channels includes a total of two channels.

[0013] In other features, the multi-plenum gas manifold further includes a coupler connected to the first set of channels and the second set of channels and configured to connect to the conduit to transfer the first gas type and the second gas type between the multi-plenum gas manifold and the substrate processing station.

[0014] In other features, a substrate processing system is provided that includes: a multi-plenum gas manifold; and a substrate processing chamber including a plurality of substrate processing stations. The multi-plenum gas manifold transfers a first type of gas and a second type of gas between the multi-plenum gas manifold and the substrate processing stations.

[0015] In other features, the substrate processing system further comprises a conduit. The multi-plenum gas manifold comprises a coupler connected to the first set of channels and the second set of channels. The conduit is connected to the coupler and transmits the first type of gas and the second type of gas between the multi-plenum gas manifold and the substrate processing station.

[0016] In other features, the first set of channels includes suction channels and transfer channels. The suction channels are respectively connected to the substrate processing stations and suck the first type of gas from the substrate processing stations into the first chamber. The first chamber guides the first type of gas from the suction channels to the transfer channels.

[0017] In other features, the first set of channels includes source channels and distribution channels. The distribution channels are respectively connected to the substrate processing stations and distribute the first type of gas from the first chamber to the substrate processing stations. The first chamber receives the first type of gas from the gas source and distributes the first type of gas to the distribution channels.

[0018] In other features, the second set of channels includes a suction channel and a transfer channel. The suction channels are respectively connected to the substrate processing station and suck the second type of gas from the substrate processing station into the second chamber. The second chamber guides the second type of gas from the suction channel to the transfer channel.

[0019] In other features, the second set of channels includes source channels and distribution channels. The distribution channels are respectively connected to the substrate processing stations and distribute the second type of gas from the second chamber to the substrate processing stations. The second chamber receives the second type of gas from the gas source and distributes the second type of gas to the distribution channels.

[0020] In other features, the number of channels in the first set of channels is less than or equal to the total number of substrate processing stations in the substrate processing chamber plus 1. In other features, the number of channels N in the second set of channels is less than or equal to the total number of substrate processing stations M in the substrate processing chamber plus 1.

[0021] In other features, the first set of channels includes pumping channels and transfer channels. The total number of pumping channels of the first plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

[0022] In other features, the first set of channels includes source channels and distribution channels. A total number of distribution channels of the first plenum is less than or equal to a total number of substrate processing stations within the substrate processing chamber.

[0023] In other features, the second set of channels includes pumping channels and transfer channels. The total number of pumping channels of the second plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

[0024] In other features, the second set of channels includes source channels and distribution channels. A total number of distribution channels of the second plenum is less than or equal to a total number of substrate processing stations within the substrate processing chamber.

[0025] Further areas of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The present disclosure will be more fully understood through the following detailed description and accompanying drawings, in which:

[0027] Figure 1 is a functional block diagram of an example of a substrate processing system including one or more multi-plenum gas manifolds implemented to distribute different gas species to multiple processing stations according to embodiments of the present disclosure;

[0028] Figure 2 is a top view of a substrate processing chamber according to an embodiment of the present disclosure, the substrate processing chamber including a multi-plenum gas manifold implemented to transfer different gas species from multiple process stations;

[0029] Figure 3 is a functional block diagram of a gas transfer system including a multi-plenum gas manifold according to an embodiment of the present disclosure;

[0030] Figure 4 is a top perspective view of a dual plenum gas manifold according to the present disclosure;

[0031] Figure 5 yes Figure 4 A top view of a dual-plenum gas manifold;

[0032] Figure 6 yes Figure 4-Figure 5 The dual plenum gas manifold Figure 5 A side cross-sectional view taken along section line AA;

[0033] Figure 7 yes Figure 4-Figure 5 The dual plenum gas manifold Figure 5 A side sectional top view taken along section line BB;

[0034] Figure 8 yes Figure 4-Figure 5 A bottom view of a dual-plenum gas manifold;

[0035] Fig. 9 yes Figure 4-Figure 5 A side view of a dual plenum gas manifold;

[0036] Fig.10 yes Figure 4-Figure 5 A cutaway top perspective view of a portion of a dual plenum gas manifold;

[0037] Fig.11is a perspective view of a three-plenum gas manifold according to an embodiment of the present disclosure;

[0038] Fig.12 It is shown Fig.11 A cutaway top perspective view of an upper portion of a three-plenum gas manifold;

[0039] Fig.13 According to the embodiment of the present disclosure Fig.11 A cross-sectional view of a lower portion of a dual plenum of a three-plenum gas manifold;

[0040] Fig.14 yes Fig.11 A top perspective exploded view of a three-plenum gas manifold;

[0041] Fig.15 is a top view of a portion of another three-plenum gas manifold including concentric cavities according to the present disclosure;

[0042] Fig.16 yes Fig.15 a perspective view of a portion of a three-plenum manifold of FIG. 1 ; and

[0043] Fig.17 is a cross-sectional top view of a portion of a multi-plenum manifold according to another embodiment of the present disclosure.

[0044] Among the drawings, reference labels may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0045] A multi-station processing tool may include multiple processing stations disposed within a processing chamber. During substrate processing, various gas species may be supplied to and transferred from the substrate processing stations. In order to facilitate the distribution and transfer of gas species, one or more different manifold stacks may be used, wherein each manifold is used to i) distribute a specific gas species to multiple processing stations, or ii) transfer a specific gas species from multiple processing stations. Each of the manifolds that distribute gas species may receive gas species from a source such as a gas box and supply the gas species to multiple stations. Each of the manifolds for transferring gas species may receive gas species from multiple stations and transfer the collected gas species to a foreline (or large exhaust line). The more gas species that are supplied and / or transferred, the more manifolds and corresponding supply and transfer lines are included in the tool. Each of the manifolds may include a corresponding housing including a top wall and a bottom wall. Depending on the processing system, there may be a large number of manifolds and corresponding supply and transfer lines, which requires a large amount of available space within the tool. Due to limited available space, this arrangement may appear crowded or infeasible.

[0046] Examples presented herein include multi-plenum gas manifold arrangements configured for compact and centralized gas distribution and transfer. These arrangements minimize the corresponding amount of space occupied within the tool and allow the number of plenums to be increased with a minimal increase in the amount of space occupied. These arrangements can be extended to any number of plenums. Each of the multi-plenum gas manifolds disclosed herein includes a plurality of plenums, each of which has a cavity and a plurality of channels extending radially outward from the cavity. The compactness of the multi-plenum gas manifold design is due to the arrangement of the cavities and the layered arrangement of the intake and exhaust channels at multiple axial levels.

[0047] The disclosed examples include a multi-plenum gas manifold having concentric and / or radially offset cavities. These cavities have different shapes and / or sizes. Some examples include a monolithic body having multiple cavities and corresponding grouped channels. In some examples, the channel of a first cavity extends adjacent to and / or through one or more other cavities. The channel of the first cavity is axially offset from the channels of one or more other cavities to facilitate attachment and access to couplers of grouped channels. Each plenum in a multi-plenum gas manifold may include an N to M relationship between multiple inlet channels and multiple outlet channels, where N and M are integers greater than or equal to 1. In some examples, the longitudinal centers of the channels of different plenums in a multi-plenum gas manifold are arranged in the same plane or are axially offset to be arranged in different planes. These and other exemplary embodiments are further described below.

[0048] Figure 1 A substrate processing system (or tool) 100 is shown, which includes a processing chamber 101 and a plurality of processing stations ( Figure 1 One or more multi-plenum gas manifolds 102 for two processing stations 104 are shown. Figure 2-Figure 17 An example of a multi-plenum gas manifold 102 is shown and described. Figure 1 A distribution manifold (ie, multi-plenum gas manifold 102) is shown, but the substrate processing system 100 may include a transfer manifold, an example of which is Figure 2-Figure 17 shown. Figure 2-Figure 17Each of the multi-plenum gas manifolds shown in can be used as a distribution and / or transfer manifold. Each plenum of each multi-plenum gas manifold can be connected to operate as (i) a distribution plenum or (ii) a transfer plenum, wherein the distribution plenum includes a supply channel and one or more distribution channels, wherein gas flows through the manifold in a first direction, and the transfer plenum includes one or more suction channels and a single transfer channel, wherein gas flows through the manifold in an opposite (or second) direction. Each plenum can be used to supply or transfer only one gas type. In one embodiment, one or more plenums are used to supply a gas mixture, which includes, for example, a processing (or reaction) gas and an inert gas (e.g., argon) for an etching, deposition, or cleaning process.

[0049] refer to Figure 1 , each processing station includes a respective substrate support (e.g., substrate support 106), such as an electrostatic chuck, and a showerhead (e.g., showerhead 108). Each of the processing stations 104 includes an upper electrode and a lower electrode. The showerhead may be implemented as an upper electrode or include an upper electrode. The substrate support may be implemented as a lower electrode or include a lower electrode. The upper electrode and the lower electrode may be implemented as radio frequency (RF) electrodes, bias electrodes, clamping electrodes, and / or heating electrodes. By way of example only, the upper electrode may be implemented as a showerhead, which introduces and distributes gas in the processing station. The showerhead may include a rod 116, which includes an end connected to the top surface of the processing chamber 101. The showerhead is generally cylindrical and extends radially outward from the opposite end of the rod 116 at a position spaced apart from the top surface of the processing chamber. The surface of the showerhead facing the substrate includes a hole through which a processing gas or a purge gas flows. Alternatively, the showerhead may include a conductive plate and the gas may be introduced in another manner.

[0050] The RF generation system 120 generates an RF voltage and outputs it to the upper electrode and the lower electrode. For each processing station, one of the upper electrode and the lower electrode can be DC grounded, AC grounded, or at a floating potential. By way of example only, the RF generation system 120 can be controlled by a system controller 121 and includes one or more RF generators 122 (e.g., a capacitively coupled plasma RF power generator, a bias power generator, and / or other RF power generators) that generate an RF voltage that is fed to the upper electrode and / or the lower electrode by one or more matching and distribution networks 124. The system controller 121 sets and adjusts the frequency of the RF signal output from the RF generators 123, 125. The frequency can be adjusted to adjust the power distribution within and across the substrate support.

[0051] As an example, a first RF generator 123, a second RF generator 125, a first RF matching network 127, and a second RF matching network 129 are shown. The first RF generator 123 and the first RF matching network 127 can provide an RF voltage or can simply connect the showerhead to a ground reference. The second RF generator 125 and the second RF matching network 129 can each or collectively be referred to as a power supply and provide an RF / bias voltage to the substrate support. In one embodiment, the first RF generator 123 and the first RF matching network 127 provide power to ionize the gas and drive the plasma. In another embodiment, the second RF generator 125 and the second RF matching network 129 provide power to ionize the gas and drive the plasma. One of the RF generators 123, 125 can be a high power RF generator, generating, for example, 6-10 kilowatts (kW) or more.

[0052] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas source 132 supplies one or more precursors and gas mixtures thereof. The gas source 132 can also supply etching gas, carrier gas and / or purge gas. Vaporized precursors can also be used. The gas source 132 is connected to the corresponding plenum of one or more multi-plenum gas manifolds 102 through valves 134-1, 134-2, ..., and 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively referred to as mass flow controllers 136). The output of the manifold 102 is fed to the processing station of the chamber 101. As an example only, the output of the manifold 102 can be fed to the showerhead.

[0053] A valve 156 and a pump 158 may be used to exhaust reactants from the process chamber 101. Although a single valve 156 and pump 158 are shown, additional valves and / or pumps may be included. For gas transfer, one or more multi-plenum gas manifolds may be utilized, as further described below.

[0054] The system controller 121 may control components of the substrate processing system 100, including controlling the supplied RF power level, the pressure and flow rate of the supplied gas, RF matching, etc. The system controller 121 controls the state of the valve 156 and the pump 158. The robot 164 may be used to transfer substrates into and remove substrates from the processing station 104. For example, the robot 164 may transfer substrates between the substrate support 106 and the load lock 166. The robot 164 may be controlled by the system controller 121. The system controller 121 may control the operation of the load lock 166. Valves, gas and / or coolant pumps, power supplies, RF generators, etc. may be referred to as actuators.

[0055] The substrate processing system 100 also includes a power supply 170 that can supply power to the system controller 121. The power supply 170 can be controlled by the system controller 121. The system controller 121 can control the supply of power from the power supply 170 to the RF generating system 120.

[0056] Figure 2 A top view of a substrate processing chamber 200 is shown, which includes a multi-plenum gas manifold 202 implemented to transfer different gas species from multiple processing stations 204. Figure 2 In the example shown, a multi-plenum gas manifold 202 is shown to include two plenums. Each plenum has multiple suction input channels and a transfer output channel. The first plenum includes a suction input channel 210 and a transfer output channel 212. The second plenum includes a suction input channel 214 and a transfer output channel 216. The suction input channel 210, the transfer output channel 212, the suction input channel 214, and the transfer output channel 216 extend outward from the multi-plenum gas manifold 202 to various points in the processing station 204. Each plenum may have one or more suction input channels, respectively, for one or more processing stations 204. In the example shown, the first plenum has four suction input channels, and the second plenum has three suction input channels. These channels may include corresponding couplers. Figure 4-Figure 14 An exemplary coupler is shown in FIG. 2. Although manifold 202 is shown as an octagon, multi-plenum gas manifold 202 may have a different shape and a different number of sides. As an example, multi-plenum gas manifold 202 may be circular.

[0057] Figure 3 A gas transfer system 300 is shown that includes a multi-plenum gas manifold 302 for receiving gas species from a plurality of substrate processing stations 304. For example, the multi-plenum gas manifold 302 may include two plenums, where each plenum receives a particular gas species from the substrate processing stations 304. The first plenum may receive a first gas species from each substrate processing station 304. The second plenum may receive a second gas species from each substrate processing station 304. The multi-plenum gas manifold 302 receives the two gas species and directs the gas species to respective vacuum forelines 306. One or more vacuum pumps 308 may draw the gas species from the substrate processing stations 304 to the vacuum forelines 306 via the multi-plenum gas manifold 302. The vacuum pumps 308 may be controlled by a system controller (e.g., Figure 1 The system controller 121) is controlled.

[0058] Figure 4-Figure 5A dual-plenum gas manifold 400 (also referred to as a multi-plenum gas manifold) is shown, comprising a body 402, channels (outwardly protruding portions of some channels are labeled 404), a coupler 406, and caps 408, 410. The individual plenums are isolated from one another. The coupler 406 may be (i) welded directly to the channel having an outwardly protruding portion, or (ii) indirectly connected to the channel 404 via a conduit 412, as shown by a coupler 406A. The coupler 406A may be welded to the conduit 412, which in turn is welded to the protruding portion of the channel of the body 402. The coupler 406A may be a female style coupler 406A1 or a male style coupler 406A2. The coupler 406 may be screwed into a threaded hole 414 in the body 402 (as shown by the coupler 406B).

[0059] The body 402 includes a mounting hole 420 through which a fastener may extend, for example, to fasten the body 402 to a processing chamber (e.g., Figure 1 The fasteners may be bolts that pass through holes 420 and are screwed into the top plate.

[0060] Caps 408 and 410 cover and seal the Figure 6-Figure 7 The first cavity 600 and the second cavity 602 of the two plenums of the dual plenum gas manifold 400 are shown in FIG. The caps 408 , 410 may be concentric, and the first cavity 600 and the second cavity 602 may be concentric such that the second cavity 602 is disposed radially outwardly outside the first cavity 600 . Figure 6 Shows Figure 4-Figure 5 The dual plenum gas manifold 400 along Figure 5 A side sectional view taken along section line AA. Figure 7 Shows Figure 4-Figure 5 The dual plenum gas manifold 400 along Figure 5 The first plenum of the dual plenum gas manifold 400 refers to the first cavity 600 and the passage extending from the first cavity 600. The second plenum of the dual plenum gas manifold 400 refers to the second cavity 602 and the passage extending from the second cavity 602. The first cavity 600 may be covered by a cap 408, which may be press-fit, welded, and / or otherwise attached to the body 402.

[0061] The first cavity 600 can have a first depth D1 and the second cavity 602 can have a second depth D2. The first cap 408 has a first thickness T1 and the second cap 410 has a second thickness T2 that is less than T1. The thickness T1 can be less than the thickness T2 such that the first volume of the first cavity 600 is similar to the second volume of the second cavity 602. The first cavity 600 can have a height H1 and be based on the thickness T1. The second cavity 602 can have a height H2 and be based on the thickness T2. In the example shown, the first cavity 600 is deeper than the second cavity 602. Figure 6 , several channels 610 of a first plenum are shown and several channels 612 of a second plenum are shown. The first volume of the first cavity 600 can be the same as or different from the second volume of the second cavity 602.

[0062] Figure 8 The main body 402 is shown Figure 4-Figure 5 4. Bottom view of dual plenum gas manifold 400. The passageway of body 402 is connected to conduit 412 and conduit 800 of coupler 406B. Fig. 9 Shows Figure 4-Figure 5 800, and some of the couplers 406 are shown. The channel of the first plenum is offset vertically and axially from the channel of the second plenum. The vertical offset VO between the center of the channel of the first plenum and the center of the channel of the second plenum is shown. The vertical offset VO can be based on the outer diameter of the channel. The larger the outer diameter, the greater the offset. For example, the outer diameter of the channel can be 0.375 inches (or 9.525 millimeters (mm)), and the vertical offset can be between 0.25-0.5 inches (or 6.35-12.7mm). In one embodiment, the channels of the first and second plenums do not overlap annularly. In one embodiment, the channels of the first and second plenums do not intersect each other.

[0063] The longitudinal center lines of the passages of the plenum chambers may be arranged in the same plane, or may be axially offset to be arranged in different planes, as shown. Fig. 9 , a center point 910 of the channel of the first plenum and a center point 912 of the channel of the second plenum are shown and refer to longitudinal center lines extending along the length of the channel. The longitudinal center line of the first plenum lies in a first plane 914. The longitudinal center line of the second plenum lies in a second plane 916 that is offset axially and vertically from the first plane 914.

[0064] Fig.10 Shows Figure 4-Figure 54 shows a portion of a dual plenum gas manifold 400 in FIG. 4 , showing a cross-section of a pair of passages through a portion of a body 402 and the dual plenum gas manifold 400. The passages are labeled 1000, 1002 and have corresponding couplers 406A1. The passages 1000, 1002 have projections 1004, 1006 extending outwardly from the body 402. To form the body 402, an initial block of material may be transversely drilled to provide the passages 1000, 1002, and then the exterior of the block of material may be machined to remove material and provide the projections 1004, 1006. The passages 1000, 1002 and other passages of the body 402 may extend radially outwardly from a centerline 1010 of the body 402. Conduits 1020, 1022 may be welded to the projections 1004, 1006 and the coupler 406A1. Fig.10 Also shown is a cross-sectional portion 1030 of the body 402 which provides a circular dividing wall between the cavities 600 , 602 and extends upwardly from a base 1032 .

[0065] Figures 11 to 14 A three-plenum gas manifold 1100 is shown, which includes a body 1102 and three plenums, each of which includes a first cavity 1204, a second cavity 1206, and a third cavity 1208 and corresponding groups of channels. The first plenum includes a first cavity 1204 and a first group of channels 1210. The second plenum includes a second cavity 1206 and a second group of channels 1212. The third plenum includes a third cavity 1208 and a third group of channels 1214. In the example shown, the third group of channels includes a total of two channels. The first cavity 1204 may have a notch to accommodate the third cavity 1208, as shown in the figure, so that a portion of the first cavity is crescent-shaped and the inner edge 1215 closest to the third cavity 1208 is straight. In one embodiment, the channels 1214 extend at a 90° angle relative to each other. There is a dividing wall 1218 between the first cavity 1204 and the second cavity 1206.

[0066] The body 1102 includes caps 1220 and 1222 for covering and closing the first cavity 1204 and the second cavity 1206. The caps 1220 and 1222 may be configured to Figure 4-Figure 5 The caps 408 and 410 are similar. The caps 1220 and 1222 may be concentric, and the first cavity 1204 and the second cavity 1206 may be concentric. The first cavity 1204 is circular, and the second cavity 1206 is annular.

[0067] A first set of channels 1210 are connected to a coupler 1230. A second set of channels 1212 are connected to a coupler 1232. A third set of channels 1214 are connected to a coupler 1234. The first set of channels 1210 may be connected to the coupler 1230 via conduits, some of which are labeled 1240. The second set of channels 1212 may be connected to the coupler 1232 via conduits, some of which are labeled 1242. The third set of channels 1214 may be connected to the coupler 1234 via conduits, one of which is labeled 1244. Fig.12 and 14 12 is a diagram showing a portion 1236 of the body 1102 that partially surrounds the third cavity 1208. The third cavity 1208 is laterally (or radially) adjacent to a portion of the first cavity 1204 and axially adjacent to a portion of the second cavity 1206. The portion 1236 protrudes radially inward into a portion of the first cavity 1204.

[0068] The first plenum, the second plenum, and the third plenum are isolated from each other and can be used as distribution plenums or transfer plenums. Each plenum can include a single source channel and one or more distribution channels when distributing gas species. When transferring gas species, each plenum can include a single transfer channel and one or more suction channels. The number of distribution or suction channels that each plenum can have is the same or less than the number of substrate processing stations in the corresponding substrate processing chamber. In one embodiment, no channels overlap in a ring shape. In one embodiment, the channels do not intersect each other.

[0069] although Figure 4-Figure 14 The multi-plenum gas manifold is shown with two caps, but the multi-plenum gas manifold may have a single cap enclosing multiple cavities or may have no caps. In one embodiment, the body of the multi-plenum gas manifold is formed such that Figure 4-Figure 14 The opening closed by the cap shown in the figure is covered by the top wall of the body. Each top wall is integrally formed as a part of the corresponding body.

[0070] Figures 4 to 14 The body of the multi-plenum gas manifold can be formed of stainless steel, nickel-based alloys, aluminum, and / or other suitable materials. In one embodiment, the body is formed of a material suitable for withstanding the passage of corrosive gas species and the pressure of the gas species.

[0071] Figure 15 to Figure 16 A portion 1500 of another three-plenum gas manifold including concentric cavities is shown. The portion 1500 is provided to illustrate that a multi-plenum gas manifold may include three or more concentric cavities and corresponding groups of channels. Figures 1 to 14 The multi-plenum gas manifold may be configured to include any number of concentric cavities and corresponding grouped channel sets.

[0072] The three-plenum gas manifold includes a body having a first cavity 1504, a second cavity 1506, and a third cavity 1508. The body may include a first circular wall 1510 enclosing at least a portion of the first cavity 1504, a second circular wall 1512 enclosing at least a portion of the second cavity 1506, and a third circular wall 1514 enclosing at least a portion of the third cavity 1508. The body may have a bottom circular wall enclosing the bottoms of the first cavity 1504, the second cavity 1506, and the third cavity 1508. The body may also include caps that respectively enclose the tops of the cavities 1504, 1506, 1508, similar to Figure 4-Figure 14 A cap for a multi-plenum gas manifold is shown and described in . In one embodiment, the body is a unitary body.

[0073] The first cavity 1504 has a channel 1520 extending radially outward from it. The second cavity 1506 has a channel 1522 extending radially outward from it. The third cavity 1508 has a channel 1524 extending radially outward from it. Channels 1520, 1522, 1524 can be offset from each other axially, vertically and / or annularly. Two or more channels 1520, 1522, 1524 can be axially offset from each other and overlap annularly with each other. For example, the first channel can be axially offset from the second channel and overlap annularly with the second channel so that the first channel is at least partially located above the second channel. In one embodiment, channels 1520, 1522, 1524 do not overlap annularly. In one embodiment, channels 1520, 1522, 1524 do not intersect each other. Channels 1520, 1522, 1524 can be linear channels as shown in the figure, or can be nonlinear.

[0074] Fig.17 Shows something like Figure 15-16A portion 1700 of a multi-plenum gas manifold of a three-plenum gas manifold. The multi-plenum gas manifold includes a plurality of plenums 1702, 1704, 1706, 1708. Pleistocene chambers 1702, 1704 are concentric. Pleistocene chambers 1706, 1708 may be semicircular arches. Pleistocene chambers 1706, 1708 do not have circular cavities. Pleistocene chambers 1702, 1704, 1706, 1708 have respective cavities and groups of channels. Each plenum 1702, 1704, 1706, 1708 may have any number of channels. In the example shown, plenum 1702 has two channels 1710, plenum 1704 has two channels 1712, plenum 1706 has three channels 1714, and plenum 1708 has three channels 1716. Although the multi-plenum gas manifold is shown with a specific number of circular cavities (e.g., first cavity 1720 and second cavity 1722 of plenums 1702, 1704) and non-circular cavities (e.g., third cavity 1724 and fourth cavity 1726 of plenums 1706, 1708), the multi-plenum gas manifold may include any number of circular cavities and any number of non-circular cavities. For example, plenum 1704 may be split to provide two non-circular cavities that are similar in shape to the cavities of plenums 1706, 1708.

[0075] The multi-plenum gas manifold may include a body. The body may include a first circular wall 1730 enclosing at least a portion of the first cavity 1720, a second circular wall 1732 enclosing at least a portion of the second cavity 1722, a side wall 1734 enclosing at least a portion of the third cavity 1724, and a side wall 1736 enclosing at least a portion of the fourth cavity 1726. The body may have a bottom circular wall enclosing the bottoms of the first cavity 1720, the second cavity 1722, the third cavity 1724, and the fourth cavity 1726. The body may also include a cap enclosing the tops of the first cavity 1720, the second cavity 1722, the third cavity 1724, and the fourth cavity 1726, respectively, similar to Figure 4-Figure 14 A cap for a multi-plenum gas manifold is shown and described in . In one embodiment, the body is a unitary body.

[0076] Examples disclosed herein include a multi-plenum gas manifold having multi-stage gas flow paths that ensure that gas species remain isolated as they are distributed to and / or transferred from a substrate processing station.

[0077] The foregoing description is illustrative only and is not intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be limited thereto, because after studying the drawings, the specification and the appended claims, other modifications will become apparent. It should be understood that one or more steps in the method can be performed in different orders (or simultaneously) without changing the principles of the present disclosure. In addition, although each embodiment is described above to have certain features, any one or more of those features described for any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and the arrangement of one or more embodiments to each other is still within the scope of the present disclosure.

[0078] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless explicitly described as "directly," when the relationship between a first and a second element is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intermediate elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intermediate elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical "or," and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0079] In some embodiments, the controller is part of a system, which can be part of the above examples. Such a system may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after semiconductor wafer or substrate processing. The electronic device may be referred to as a "controller", which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out tools and other transfer tools and / or load locks connected or interfaced to a specific system.

[0080] Broadly speaking, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. The integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions communicated to the controller in the form of various separate settings (or program files) defining operating parameters for performing a specific process on or for a semiconductor wafer or for a system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0081] In some embodiments, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be located in the "cloud", or in all or part of a wafer fab host computer system, thereby allowing remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check the trends or performance indicators of multiple manufacturing operations, change the parameters of the current processing, set the processing steps to follow the current processing, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system via a network that may include a local network or the Internet. The remote computer may include a user interface that allows input or programming of parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify the parameters of each processing step to be performed during one or more operations. It should be understood that these parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by including one or more discrete controllers networked together and working toward a common purpose (e.g., the processes and controls described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits located remotely (e.g., at a platform level or as part of a remote computer) that combine to control the processes on the chamber.

[0082] Without limitation, exemplary systems may include plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in semiconductor wafer fabrication and / or production.

[0083] As described above, depending on the process steps to be performed by the tool, the controller may communicate with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used for material transport that move containers of wafers between tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A multi-plenum gas manifold comprising: Monolithic body; a first plenum disposed within the unitary body and configured to distribute or transfer a first type of gas to or from one or more substrate processing stations, the first plenum comprising: a first cavity, and a first set of channels extending outwardly from the first cavity; and a second plenum disposed within the monolithic body, isolated from the first plenum, and configured to distribute or transfer a second type of gas to or from the one or more substrate processing stations, the second plenum comprising: a second cavity disposed radially outside the first cavity, and A second set of channels extends outwardly from the second cavity.

2. The multi-plenum gas manifold of claim 1, wherein the first cavity and the second cavity are circular.

3. The multi-plenum gas manifold of claim 1, wherein the first cavity and the second cavity are concentric cavities.

4. The multi-plenum gas manifold of claim 1, wherein at least one of the first cavity and the second cavity is not circular.

5. The multi-plenum gas manifold of claim 1, further comprising one or more caps configured to enclose the first cavity and the second cavity.

6. The multi-plenum gas manifold of claim 5, wherein the one or more caps comprise: a first cap configured to close the first cavity; as well as A second cap is configured to close the second cavity.

7. The multi-plenum gas manifold of claim 6, wherein the first cap is thicker than the second cap.

8. The multi-plenum gas manifold of claim 7, wherein the first cavity is deeper than the second cavity.

9. The multi-plenum gas manifold of claim 1, wherein a first volume of the first cavity is equal to a second volume of the second cavity.

10. The multi-plenum gas manifold of claim 1, wherein a first volume of the first cavity is different than a second volume of the second cavity.

11. The multi-plenum gas manifold of claim 1 , wherein: The first set of channels includes a plurality of aspiration channels and transfer channels; The plurality of suction channels suck the first type of gas into the first cavity; and The first chamber guides the first type of gas from the plurality of suction channels to the transfer channel.

12. The multi-plenum gas manifold of claim 1, wherein: The first set of channels includes a source channel and a plurality of distribution channels; The plurality of distribution channels distribute the first type of gas from the first chamber; and The first chamber receives the first type of gas from the source channel and distributes the first type of gas to the plurality of distribution channels.

13. The multi-plenum gas manifold of claim 1, wherein: The second set of channels includes a plurality of aspiration channels and transfer channels; The plurality of suction channels suck the second type of gas into the second chamber; and The second chamber guides the second type of gas from the plurality of suction channels to the transfer channel.

14. The multi-plenum gas manifold of claim 1, wherein: The second set of channels includes a source channel and a plurality of distribution channels; The plurality of distribution channels distribute the second type of gas from the second chamber; and The second chamber receives the second type of gas from the source channel and distributes the second type of gas to the plurality of distribution channels.

15. The multi-plenum gas manifold of claim 1, wherein the second set of channels is at least one of: axially or vertically offset from the first set of channels.

16. The multi-plenum gas manifold of claim 1 further comprising a third plenum isolated from the first and second plenums and comprising a third cavity and a third set of channels.

17. The multi-plenum gas manifold of claim 16, wherein the third cavity is radially adjacent to the first cavity and axially adjacent to the second cavity.

18. The multi-plenum gas manifold of claim 16, wherein the third set of channels includes a total of two channels.

19. The multi-plenum gas manifold of claim 1 , further comprising a plurality of couplers connected to the first set of channels and the second set of channels and configured to be connected to a plurality of conduits to transport the first type of gas and the second type of gas between the multi-plenum gas manifold and a plurality of substrate processing stations.

20. A substrate processing system comprising: The multi-plenum gas manifold according to claim 1; as well as a substrate processing chamber including a plurality of substrate processing stations, The multi-plenum gas manifold transmits the first gas type and the second gas type between the multi-plenum gas manifold and the plurality of substrate processing stations.

21. The substrate processing system of claim 20, further comprising a plurality of conduits, wherein: The multi-plenum gas manifold includes a plurality of couplers connected to the first set of channels and the second set of channels; and The plurality of conduits are connected to the plurality of couplers and transport the first type of gas and the second type of gas between the multi-plenum gas manifold and the plurality of substrate processing stations.

22. The substrate processing system of claim 20, wherein: The first set of channels includes a plurality of aspiration channels and transfer channels; The plurality of pumping channels are respectively connected to the plurality of substrate processing stations and pump the first type of gas from the plurality of substrate processing stations into the first chamber; and The first chamber guides the first type of gas from the plurality of suction channels to the transfer channel.

23. The substrate processing system of claim 20, wherein: The first set of channels includes a source channel and a plurality of distribution channels; The plurality of distribution channels are respectively connected to the plurality of substrate processing stations and distribute the first type of gas from the first chamber to the plurality of substrate processing stations; and The first chamber receives the first type of gas from a gas source and distributes the first type of gas to the plurality of distribution channels.

24. The substrate processing system of claim 20, wherein: The second set of channels includes a plurality of aspiration channels and transfer channels; The plurality of suction channels are respectively connected to the plurality of substrate processing stations and suck the second type of gas from the plurality of substrate processing stations into the second chamber; and The second chamber guides the second type of gas from the plurality of suction channels to the transfer channel.

25. The substrate processing system of claim 20, wherein: The second set of channels includes a source channel and a plurality of distribution channels; The plurality of distribution channels are respectively connected to the plurality of substrate processing stations and distribute the second type of gas from the second chamber to the plurality of substrate processing stations; and The second chamber receives the second type of gas from a gas source and distributes the second type of gas to the plurality of distribution channels.

26. The substrate processing system of claim 20, wherein the number of channels in the first set of channels is less than or equal to the total number of substrate processing stations in the substrate processing chamber plus one.

27. The substrate processing system of claim 20, wherein the number N of channels in the second set of channels is less than or equal to the total number M of substrate processing stations in the substrate processing chamber plus 1.

28. The substrate processing system of claim 20, wherein: The first set of channels includes a plurality of aspiration channels and transfer channels; and The total number of pumping channels of the first plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

29. The substrate processing system of claim 20, wherein: The first set of channels includes a source channel and a plurality of distribution channels; and A total number of distribution channels of the first plenum is less than or equal to a total number of substrate processing stations in the substrate processing chamber.

30. The substrate processing system of claim 20, wherein: The second set of channels includes a plurality of aspiration channels and transfer channels; and The total number of pumping channels of the second plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

31. The substrate processing system of claim 20, wherein: The second set of channels includes a source channel and a plurality of distribution channels; and The total number of distribution channels of the second plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

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