Information processing apparatus, substrate processing apparatus, and information processing method

Abstract

Provided are an information processing apparatus, a substrate processing apparatus, and an information processing method which appropriately or easily determine the state of an elastic film in a substrate holding apparatus used in a substrate polishing process. The information processing apparatus includes: an information acquisition unit that acquires, as an operation state when the substrate processing apparatus is operated, apparatus operation information including polishing process information indicating a state of polishing process of a substrate and transport process information indicating a state of transport process of the substrate; and a state determination unit that inputs the device operation information acquired by the information acquisition unit into a learning model in which the correlation between the device operation information and elastic film state information has been learned by machine learning, thereby determining the elastic film state information with respect to the device operation information. The elastic film state information indicates the state of the elastic film in the top ring when the polishing process and / or the conveying process indicated by the device operation information are / is performed.

Description

Technical Field

[0001] The invention relates to an information processing device, a substrate processing device and an information processing method. Background Art

[0002] In the manufacturing process of semiconductor devices, a chemical mechanical polishing (CMP) device is used to flatten the surface of the substrate. The substrate used to manufacture semiconductor devices is in most cases in the shape of a circular plate. In addition, not only semiconductor devices, but also the requirements for flatness when flattening the surface of quadrilateral substrates such as CCL substrates (Copper Clad Laminate), PCB (Printed Circuit Board) substrates, mask substrates, and display panels are also increasing. In addition, the requirements for surface flattening of packaging substrates of electronic devices equipped with PCB substrates are also increasing.

[0003] In such a substrate processing device, in order to make the relative pressing force between the substrate being polished and the polishing surface of the polishing pad uniform or adjust the pressing force, a substrate holding device using an elastic film (film) is used. As an example, a pressure chamber formed by an elastic film (film) is provided at the lower part of a top ring as a substrate holding device, and by supplying gas such as air to the pressure chamber, the substrate is pressed against the polishing surface of the polishing pad and polished.

[0004] After the polishing process is completed, the substrate holding device moves to a position above the conveyor table while holding the substrate, and delivers the substrate to the conveyor table. As an example, the delivery of the substrate is performed by supplying gas to the pressure chamber while spraying gas to the gap between the substrate and the elastic membrane, so that the substrate is separated from the elastic membrane. The seating of the substrate on the conveyor table is detected by a plurality of sensors for detecting different positions of the substrate. The substrate placed on the conveyor table is delivered to the swing conveyor device and transported to the subsequent process.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2012-178608

[0008] Technical problem to be solved by the invention

[0009] The elastic membrane used in the substrate processing device is worn or degraded by repeated substrate grinding. When the elastic membrane is worn or degraded, the substrate processing conditions such as the grinding pressure change, and the uniformity of the film thickness of the substrate after the grinding process may be impaired. Therefore, in the past, whenever a predetermined number of substrates (such as hundreds or thousands of sheets) are ground, the elastic membrane is maintained or replaced. Here, in order to maintain the accuracy of substrate processing, it is preferred to increase the maintenance frequency of the elastic membrane, but the higher the maintenance frequency, the lower the hourly processing speed of the substrate processing device, and the operating cost may also increase. In addition, there are individual differences in the wear or degradation of the elastic membrane. Although it is also conceivable to set a sensor such as an image sensor in the substrate processing device to obtain the state of the elastic membrane and determine the maintenance period of the elastic membrane, it may become a cause of increasing the cost of the substrate processing device and reducing the hourly processing speed. Summary of the invention

[0010] The present invention has been made in view of the above-mentioned technical problems, and one of its objects is to appropriately or easily determine the state of an elastic film in a substrate processing apparatus.

[0011] Technical means for solving technical problems

[0012] According to one embodiment of the present invention, an information processing device is provided, comprising: an information acquisition unit that acquires device operation information including polishing process information and conveying process information as an operation state of a substrate processing device when the substrate processing device is in operation, the substrate processing device comprising a polishing table that supports a polishing pad, a top ring including an elastic membrane that constitutes a substrate holding surface and a pressure chamber, and a conveying table that is configured to receive and deliver a substrate from the top ring, the substrate processing device performing a polishing process of pressing the substrate against the polishing pad according to a fluid supplied to the pressure chamber and a conveying process of detaching the substrate from the elastic membrane and delivering the substrate to the conveying table, the polishing process information indicating a state of the polishing process, and the conveying process information indicating a state of the conveying process; and a state determination unit that inputs the device operation information acquired by the information acquisition unit into a learning model that has learned a correlation between the device operation information and the elastic membrane state information by machine learning, thereby determining the elastic membrane state information relative to the device operation information, the elastic membrane state information indicating a state of the elastic membrane when the polishing process and / or the conveying process indicated by the device operation information is performed.

[0013] According to one embodiment of the present invention, an information processing method is provided, comprising: an information acquisition step of acquiring device action information including polishing process information and conveying process information as an action state of a substrate processing device when the substrate processing device is in action, the substrate processing device comprising a polishing table supporting a polishing pad, a top ring including an elastic membrane constituting a substrate holding surface and a pressure chamber, and a conveying table configured to receive and deliver a substrate from the top ring, the substrate processing device performing a polishing process of pressing the substrate against the polishing pad according to a fluid supplied to the pressure chamber and a conveying process of detaching the substrate from the elastic membrane and delivering the substrate to the conveying table, the polishing process information indicating a state of the polishing process, and the conveying process information indicating a state of the conveying process; and a state determination step of inputting the device action information acquired by the information acquisition unit into a learning model that has learned a correlation between the device action information and the elastic membrane state information by machine learning, thereby determining the elastic membrane state information relative to the device action information, the elastic membrane state information indicating a state of the elastic membrane when the polishing process and / or the conveying process indicated by the device action information is performed. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a plan view showing the overall structure of a substrate processing apparatus according to one embodiment of the present invention.

[0015] Figure 2 It is a schematic diagram showing the structure of the polishing unit according to this embodiment.

[0016] Figure 3 It is a schematic cross-sectional view of a top ring constituting a substrate holding device that holds a wafer as a polishing object and presses it against a polishing surface on a polishing table.

[0017] Figure 4 This is a schematic diagram showing the substrate transfer device from above.

[0018] Figure 5A This is a schematic diagram showing a wafer delivery process from a top ring to a substrate delivery device.

[0019] Figure 5B This is a schematic diagram showing a wafer delivery process from a top ring to a substrate delivery device.

[0020] Figure 5C This is a schematic diagram showing a wafer delivery process from a top ring to a substrate delivery device.

[0021] Figure 6 This is a schematic functional block diagram of the controller in this embodiment.

[0022] Figure 7This is a probabilistic functional block diagram of the machine learning device in this embodiment.

[0023] Figure 8 FIG. 1 is a timing chart showing an example of detection signals of each sensor when the wafer is released.

[0024] Fig. 9 This is a diagram showing an example of the time difference between the seating timings of each wafer.

[0025] Fig.10 This is a diagram schematically showing an example of the detachment time for each wafer.

[0026] Explanation of symbols

[0027] W…Whip

[0028] 2…Loading port

[0029] 3(3A~3D)…Grinding components

[0030] 4…Cleaning components

[0031] 5…Controller

[0032] 6…First linear conveyor

[0033] 7…Second linear conveyor

[0034] 10…Abrasive pad

[0035] 10a…Grinding surface

[0036] 22…Conveyor robot

[0037] 30…Grinding table

[0038] 31…Top ring (substrate holding device)

[0039] 32…Grinding liquid supply nozzle

[0040] 52…State variable acquisition unit

[0041] 58…Decision-making Department

[0042] 59…Storage

[0043] 152…State variable acquisition unit

[0044] 154…Learning Model Generation Department

[0045] 155…Evaluation value calculation unit

[0046] 156…Learning Department

[0047] 202…Top ring body

[0048] 203…Retaining ring

[0049] 204…Membrane (elastic membrane)

[0050] 205…Central Room

[0051] 206…Corrugated Chamber

[0052] 207…External Room

[0053] 208…Edge Room

[0054] 209…Block ring pressurized chamber

[0055] 800…Substrate transfer device

[0056] 801...lift pin

[0057] 802…Release nozzle

[0058] 811~813…Sensor

[0059] 820…Loading surface. DETAILED DESCRIPTION

[0060] Below, refer to the attached Figure 1 The following describes the embodiments of the information processing device, substrate processing device, and information processing method involved in the present invention. In the accompanying drawings, the same or similar elements are marked with the same or similar reference numerals, and the repeated description of the same or similar elements is sometimes omitted in the description of each embodiment. In addition, the features shown in each embodiment can also be applied to other embodiments as long as they do not contradict each other.

[0061] Figure 1 FIG. 1 is a top view showing the overall structure of a substrate processing apparatus according to an embodiment of the present invention. Figure 1 As shown, the substrate processing device has a substantially rectangular housing 1, the interior of which is divided by partitions 1a and 1b into a loading port 2, a polishing assembly 3, and a cleaning assembly 4. The loading port 2, the polishing assembly 3, and the cleaning assembly 4 are independently assembled and independently exhausted. In addition, the substrate processing device has a controller 5 for controlling the substrate processing operation.

[0062] The loading port 2 is provided with two or more (four in the present embodiment) front loading sections 20 on which a wafer box storing a plurality of wafers (an example of substrates) is placed. These front loading sections 20 are arranged adjacent to the housing 1 and arranged along the width direction (a direction perpendicular to the long side direction) of the substrate processing apparatus. An open box, a SMIF (Standard Manufacturing Interface) box, or a FOUP (Front Opening Unified Pod) can be mounted on the front loading section 20. In addition, although a circular semiconductor wafer is used as an example of a substrate for explanation in the present embodiment, it is not limited to such an example, and a square substrate may also be used, for example.

[0063] In addition, the load port 2 is provided with a travel mechanism 21 extending along the arrangement of the front loading section 20. A conveying robot (loader) 22 that can move along the arrangement direction of the wafer box is provided on the travel mechanism 21. The conveying robot 22 can access the wafer box loaded on the front loading section 20 by moving on the travel mechanism 21. In the present embodiment, the conveying robot 22 has two hands, one above and one below. As an example, the conveying robot 22 uses the upper hand when returning the processed wafer to the wafer box, and uses the lower hand when taking out the wafer from the wafer box before processing.

[0064] The loading port 2 is a clean area, and the inside of the loading port 2 is maintained at a higher pressure than the outside of the substrate processing apparatus, the polishing unit 3, and the cleaning unit 4. The polishing unit 3 is a dirty area because slurry is used as the polishing liquid. Negative pressure is formed inside the polishing unit 3, and the pressure is maintained lower than the internal pressure of the cleaning unit 4.

[0065] The polishing unit 3 is an area where the wafer is polished (planarized), and includes a first polishing unit 3A, a second polishing unit 3B, a third polishing unit 3C, and a fourth polishing unit 3D. Figure 1 As shown, in this embodiment, the first grinding assembly 3A, the second grinding assembly 3B, the third grinding assembly 3C and the fourth grinding assembly 3D are arranged along the long side direction of the substrate processing device. In addition, the grinding assembly can also be provided with one, two, three or more than five. Since the first grinding assembly 3A, the second grinding assembly 3B, the third grinding assembly 3C and the fourth grinding assembly 3D have the same structure, only the first grinding assembly 3A will be described below.

[0066] The first polishing unit 3A includes a polishing table 30 on which a polishing pad 10 having a polishing surface is mounted, and a top ring (substrate holding device) 31 that holds a wafer and performs polishing while pressing the wafer against the polishing pad 10 on the polishing table 30. In addition, the first polishing unit 3A includes a polishing liquid supply nozzle 32 for supplying a polishing liquid or a dressing liquid (e.g., pure water) to the polishing pad 10, a dresser 33 for dressing the polishing surface of the polishing pad 10, and an atomizer 34 for spraying a mixed fluid of a liquid (e.g., pure water) and a gas (e.g., nitrogen) or a liquid (e.g., pure water) onto the polishing surface in a mist form.

[0067] Next, the conveying mechanism for conveying the wafer will be described. Figure 1 As shown, a first linear transport device 6 is disposed adjacent to the first polishing assembly 3A and the second polishing assembly 3B. The first linear transport device 6 is a mechanism for transporting wafers between four transport positions (first transport position TP1, second transport position TP2, third transport position TP3, and fourth transport position TP4 in order from the load port side) along the direction in which the first polishing assembly 3A and the second polishing assembly 3B are arranged.

[0068] Furthermore, a second linear transporter 7 is disposed adjacent to the third polishing unit 3C and the fourth polishing unit 3D. The second linear transporter 7 is a mechanism for transporting wafers between three transport positions (the fifth transport position TP5, the sixth transport position TP6, and the seventh transport position TP7 in order from the load port side) along the direction in which the third polishing unit 3C and the fourth polishing unit 3D are arranged.

[0069] The wafer is transported to the first grinding assembly 3A and the second grinding assembly 3B by the first linear conveyor 6. The top ring 31 of the first grinding assembly 3A moves between the grinding position and the second conveying position TP2 by the swinging action of the top ring head. Then, the wafer is handed over to the top ring 31 at the second conveying position TP2. Similarly, the top ring 31 of the second grinding assembly 3B moves between the grinding position and the third conveying position TP3, and the wafer is handed over to the top ring 31 at the third conveying position TP3. The top ring 31 of the third grinding assembly 3C moves between the grinding position and the sixth conveying position TP6, and the wafer is handed over to the top ring 31 at the sixth conveying position TP6. The top ring 31 of the fourth grinding assembly 3D moves between the grinding position and the seventh conveying position TP7, and the wafer is handed over to the top ring 31 at the seventh conveying position TP7.

[0070] An elevator 11 for receiving wafers from the transport robot 22 is arranged at the first transport position TP1. The wafer is delivered from the transport robot 22 to the first linear transport device 6 via the elevator 11. A gate (not shown) is provided at the partition 1a between the elevator 11 and the transport robot 22. When the wafer is transported, the gate is opened and the wafer is delivered from the transport robot 22 to the elevator 11. In addition, a swing transport device 12 is arranged between the first linear transport device 6, the second linear transport device 7 and the cleaning component 4. The swing transport device 12 has a hand that can move between the fourth transport position TP4 and the fifth transport position TP5, and the wafer is delivered from the first linear transport device 6 to the second linear transport device 7 by the swing transport device 12. The wafer is transported to the third polishing component 3C and / or the fourth polishing component 3D by the second linear transport device 7. In addition, the wafer polished by the polishing component 3 is transported to the cleaning component 4 via the swing transport device 12.

[0071] Figure 2 2 is a schematic diagram showing the structure of the first polishing unit 3A according to the present embodiment. Figure 2 As shown, the first polishing assembly 3A includes a polishing table 30 and a top ring 31 that holds a substrate such as a wafer as a polishing object and presses it against the polishing surface on the polishing table. The polishing table 30 is connected to a motor (not shown) arranged below it via a polishing table shaft 30A, and can rotate around the polishing table shaft 30A. A polishing pad 10 is attached to the upper surface of the polishing table 30, and the polishing surface 10a of the polishing pad 10 constitutes the polishing surface of the polishing wafer W. A polishing liquid supply nozzle 32 is provided above the polishing table 30, and a polishing liquid Q is supplied to the polishing pad 10 on the polishing table 30 through the polishing liquid supply nozzle 32.

[0072] The top ring 31 includes a top ring body 202 for pressing the wafer W against the polishing surface 10 a and a retaining ring 203 for holding the outer peripheral edge of the wafer W so that the wafer W does not fall out of the top ring.

[0073] The top ring 31 is connected to a top ring shaft 111, and the top ring shaft 111 is moved up and down relative to the top ring head 110 by the up and down movement mechanism 124. The top ring 31 as a whole is lifted and lowered relative to the top ring head 110 and positioned by the up and down movement of the top ring shaft 111.

[0074] The vertical movement mechanism 124 for vertically moving the top ring shaft 111 and the top ring 31 includes: a bridge 128 that rotatably supports the top ring shaft 111 via a bearing 126 ; a ball screw 132 attached to the bridge 128 ; a support table 129 supported by a support column 130 ; and a servo motor 138 provided on the support table 129 .

[0075] The ball screw 132 includes a threaded shaft 132a connected to the servo motor 138 and a nut 132b screwed to the threaded shaft 132a. The top ring shaft 111 moves up and down integrally with the bridge 128. Therefore, when the servo motor 138 is driven, the bridge 128 moves up and down via the ball screw 132, and thereby the top ring shaft 111 and the top ring 31 move up and down.

[0076] The top ring shaft 111 is connected to the rotating cylinder 112 via a key (not shown). The rotating cylinder 112 has a timing pulley 113 on its outer circumference. A top ring rotating motor 114 is fixed to the top ring head 110, and the timing pulley 113 is connected to a timing pulley 116 provided on the top ring rotating motor 114 via a timing belt 115. Therefore, by rotating the top ring rotating motor 114, the rotating cylinder 112 and the top ring shaft 111 are rotated integrally via the timing pulley 116, the timing belt 115, and the timing pulley 113, and the top ring 31 is rotated. The top ring rotating motor 114 has an encoder 140. The encoder 140 has a function of detecting the rotation angle position of the top ring 31 and a function of accumulating the rotation speed of the top ring 31. In addition, a sensor for detecting the rotation angle "reference position (0 degrees)" of the top ring 31 may be separately provided. The top ring head 110 is supported by a top ring head shaft 117 rotatably supported by a frame (not shown). Each device in the apparatus, represented by the top ring rotation motor 114 , the servo motor 138 , and the encoder 140 , is controlled by the controller 5 .

[0077] exist Figure 2 In the first polishing unit 3A constructed as shown, the top ring 31 can hold a substrate such as a wafer W on its lower surface. The top ring head 110 is configured to be able to rotate around the top ring head axis 117, and the top ring 31 holding the wafer W on the lower surface is moved from the receiving position of the wafer W to the upper side of the polishing table 30 by the rotation of the top ring head 110. Then, the top ring 31 is lowered to press the wafer W against the surface (polishing surface) 10a of the polishing pad 10. At this time, the top ring 31 and the polishing table 30 are rotated respectively, and the polishing liquid is supplied to the polishing pad 10 from the polishing liquid supply nozzle 32 provided above the polishing table 30. In this way, the wafer W is brought into sliding contact with the polishing surface 10a of the polishing pad 10, and the surface of the wafer W is polished.

[0078] Next, the top ring (substrate holding device) 31 will be described in further detail. Figure 3 FIG. 1 is a schematic cross-sectional view of a top ring 31 constituting a substrate holding device that holds a wafer W as a polishing object and presses it against a polishing surface on a polishing table. Figure 3 In the figure, only the main components constituting the top ring 31 are shown.

[0079] like Figure 3As shown, the top ring 31 includes a top ring body 202, which presses the wafer W against the grinding surface 10a, and a retaining ring 203, which directly presses the grinding surface 10a. The top ring body 202 is composed of a roughly disc-shaped component, and the retaining ring 203 is installed on the outer periphery of the top ring body 202. The top ring body 202 is formed of a resin such as engineering plastics (for example, PEEK). A membrane (elastic membrane) 204 is installed on the lower surface of the top ring body 202 to abut against the back side of the wafer. The membrane 204 defines a pressure chamber and defines a substrate holding surface, and the lower surface of the substrate holding surface is in contact with the wafer W. The membrane 204 is formed of a rubber material with excellent strength and durability, such as ethylene propylene rubber (EPDM), polyurethane rubber, and silicone rubber.

[0080] As an example, in Figure 3 In the example shown, the membrane 204 has a plurality of concentric partitions 204a, and a circular center chamber 205, an annular bellows chamber 206, an annular outer chamber 207, and an annular edge chamber 208 are formed between the upper surface of the membrane 204 and the lower surface of the top ring body 202 through these partitions 204a. That is, the center chamber 205 is formed in the center portion of the top ring body 202, and the bellows chamber 206, the outer chamber 207, and the edge chamber 208 are concentrically formed in sequence from the center toward the periphery. The membrane 204 has a plurality of holes 204h that penetrate in the thickness direction of the elastic membrane for wafer adsorption in the bellows region (bellows chamber 206). Figure 3 In the example shown, the hole 204h is provided in the corrugated area, but it may be provided at a position outside the corrugated area. Figure 3 In the example shown, the film 204 has a plurality of concentric partition walls 204 a , but the invention is not limited to this example, and the partition walls may be provided so as to divide the film 204 into a plurality of regions in the circumferential direction, or the film 204 may not have the partition walls 204 a .

[0081] A flow path 211 communicating with the center chamber 205, a flow path 212 communicating with the bellows chamber 206, a flow path 213 communicating with the outer chamber 207, and a flow path 214 communicating with the edge chamber 208 are formed in the top ring body 202. The flow paths 211 to 214 are connected to flow paths 221 to 224 connected to a vacuum source and a pressure regulator (not shown) via a rotary joint 225.

[0082] In addition, a retaining ring pressurizing chamber 209 made of an elastic film is also formed directly above the retaining ring 203, and the retaining ring pressurizing chamber 209 is connected to a flow path 226 via a flow path 215 and a rotary joint 225 formed in the top ring body (carrier) 202. In addition, the flow path 226 is connected to a vacuum source and a pressure regulating unit (not shown).

[0083] In such a top ring 31, the pressures inside the center chamber 205, the bellows chamber 206, the outer chamber 207, the edge chamber 208, and the retaining ring pressurizing chamber 209 can be independently adjusted by the vacuum source and the pressure adjusting section. With such a structure, the pressing force of the wafer W against the polishing pad 10 can be adjusted for each region of the wafer W, and the pressing force of the retaining ring 203 against the polishing pad 10 can be adjusted.

[0084] right Figure 1 to Figure 3 A series of grinding processing steps of the substrate processing device constructed as shown in the figure are described. The top ring 31 receives the wafer W from the first linear conveyor 6 and holds it by vacuum adsorption. A plurality of holes 204h for vacuum adsorption of the wafer W are provided in the membrane 204, and these holes 204h are connected to a vacuum source not shown in the figure. The top ring 31 holding the wafer W by vacuum adsorption descends to a preset setting position of the top ring during grinding. At this setting position during grinding, the retaining ring 203 contacts the surface (grinding surface) 10a of the grinding pad 10, but before grinding, since the wafer W is held by adsorption by the top ring 31, there is a small gap (for example, about 1 mm) between the lower surface (grinded surface) of the wafer W and the surface (grinding surface) 10a of the grinding pad 10. Then, both the grinding table 30 and the top ring 31 are driven to rotate. In this state, the film 204 located on the back side of the chip W is expanded, so that the lower surface (grinded surface) of the chip abuts against the surface (grinding surface) of the grinding pad 10, and the grinding table 30 and the top ring 31 move relative to each other, thereby grinding until the surface (grinded surface) of the chip W becomes a specified state (for example, a specified film thickness).

[0085] After the wafer processing step on the polishing pad 10 is completed, the wafer W is adsorbed to the top ring 31, the top ring 31 is raised, and moved to the substrate delivery device 800 of the first linear conveyor 6 to detach (release) the wafer W. In addition, in the present embodiment, the first linear conveyor 6, the second linear conveyor 7, or the substrate delivery device 800 they have, which detach the wafer W, is equivalent to an example of a "transportation table".

[0086] Figure 4 is a schematic diagram showing the substrate transfer device 800 from above. Figure 5A to Figure 5C 1 is a schematic diagram showing the delivery process of the wafer W from the top ring 31 to the substrate delivery device 800. The substrate delivery device 800 has a mounting surface 820 for mounting the wafer W. In addition, the substrate delivery device 800 has a lifting pin 801 for lifting the retaining ring 203 of the top ring 31. The mounting surface 820 and the lifting pin 801 are configured to be able to move up and down respectively by a power source (not shown) such as a cylinder.

[0087] In addition, the substrate delivery device 800 of the present embodiment has three sensors 811 to 813 for detecting the delivery of the wafer W from the top ring 31 to the mounting surface 820 (substrate delivery device 800). The sensors 811 to 813 are separately arranged along the circumference of the wafer W to detect different parts of the wafer W. The detection signals of the sensors 811 to 813 are input to the controller 5. In addition, the substrate delivery device 800 is not limited to having three sensors 811 to 813 for detecting the delivery of the wafer W, and may also have one sensor, two sensors, or four or more sensors. In addition, although the sensors 811 to 813 in the present embodiment are optical sensors, sensors using magnetic or mechanical switches may also be used.

[0088] like Figure 5A As shown in FIG. 8 , as an example, the sensor 811 includes a light projecting unit 815 and a light receiving unit 816. Figure 5A to Figure 5C In the figure, the sensors 812 and 813 are omitted, but the sensors 812 and 813 have the same structure as the sensor 811. The light projecting unit 815 is, for example, an optical fiber sensor that uses a flexible optical fiber cable as the light projecting unit of the photoelectronic sensor to miniaturize the detection head. The light receiving unit 816 is, for example, an optical fiber sensor that uses a flexible optical fiber cable as the light receiving unit of the photoelectronic sensor to miniaturize the detection head.

[0089] The light projecting unit 815 projects light in the direction of arrow A1 (see Figure 5A ). When the wafer W is not peeled off from the top ring 31, the light receiving portion 816 can receive the light projected from the light projecting portion 815. Figure 5C As shown, when the wafer W is separated from the top ring 31 and the wafer W is delivered to the mounting surface 820, the light projected from the light projecting unit 815 is blocked by the wafer W, and the light receiving unit 816 cannot detect the light. The controller 5 processes, for example, the time when the light receiving unit 816 cannot detect the light or the time when the light intensity detected by the light receiving unit 816 is lower than the threshold value as the time when the wafer W is detected. In addition, the light source of the light projecting unit 815 may be, for example, an LED, and the color of the light may be any color (for example, red, blue, green, white, etc.).

[0090] In addition, the substrate delivery device 800 of the present embodiment has, for example, three discharge nozzles 802 (see Figure 5A to Figure 5C The release nozzle 802 is connected to a pressurized fluid supply source (not shown), and the ejection of the pressurized fluid is controlled by the controller 5. However, the substrate delivery device 800 may have one, two, four or more release nozzles, or may not have a release nozzle.

[0091] Next, the operation of transferring the wafer W from the top ring 31 to the mounting surface 820 will be described. After the wafer processing step on the polishing pad 10 is completed, the top ring 31 moves to the substrate transfer device 800 while adsorbing the wafer W (see Figure 5A ) to release (release) the wafer W. Alternatively, after moving to the substrate transfer device 800, the top ring 31 may be rotated while supplying pure water or a chemical solution to the wafer W held by the top ring 31 to perform a cleaning operation.

[0092] After the top ring 31 moves toward the substrate transfer device 800, the top ring 31 descends and the mounting surface 820 rises. As a result, the mounting surface 820 approaches the lower surface of the wafer W, but the two do not contact. In addition, by descending the top ring 31, the lifting pin 801 lifts the retaining ring 203 (refer to Figure 5B ). In this state, the bellows 206 of the film 204 is expanded, and the vacuum adsorption of the wafer W is stopped, and the wafer is released. At this time, a pressurized fluid can be sprayed from the release nozzle 802 toward the gap between the film 204 and the wafer W. As the pressurized fluid, at least one of a pressurized gas (e.g., pressurized nitrogen) and a pressurized liquid (e.g., pure water) can be used.

[0093] When the wafer W is placed on the placement surface 820, the sensors 811 to 813 detect the wafer W. When all the sensors 811 to 813 detect the wafer W, the controller 5 determines that the transfer of the wafer W from the top ring 31 to the placement surface 820 is completed. Then, the placement surface 820 on which the wafer W is placed descends, the top ring 31 ascends, and the transfer of the wafer W is completed (see Figure 5C ).

[0094] Next, a method for determining the state of the membrane (elastic membrane) 204 performed by the controller 5 is described. The controller 5 includes a CPU, a memory (storage unit 59), etc., and may be composed of a microcomputer that implements a specified function using software, or may be composed of a hardware circuit that performs a dedicated calculation process. In addition, the controller 5 is not limited to being composed of a single device, and as an example, it may also be composed of a plurality of devices that are separated from each other. Here, in this embodiment, the controller 5 that determines the state of the membrane 204 is equivalent to an example of an "information processing device", and the state determination of the membrane 204 performed by the controller 5 is equivalent to an example of an "information processing method". However, the "information processing device" is not limited to the controller 5 provided on the substrate processing device, and as an example, it may also be composed of an external computer that is configured to be able to communicate with the controller 5.

[0095] Figure 6: is a schematic functional block diagram of the controller 5 in this embodiment. The controller 5 includes: a state variable acquisition unit 52, which acquires state variables (device operation information SV1); a storage unit 59, which stores a learning model; and a decision unit 58, which outputs (decides) the state of the membrane 204 based on the acquired state variables (device operation information SV1) and the learning model. Here, in this embodiment, the state variable acquisition unit 52 is equivalent to an example of an "information acquisition unit", and the decision unit 58 is equivalent to an example of a "state determination unit".

[0096] In the present embodiment, the learning model stored in the storage unit 59 is constructed by a machine learning device. As an example, the substrate processing device obtains the learning model constructed by machine learning in the machine learning device through wired or wireless communication, and stores it in the storage unit 59. Alternatively, the substrate processing device may be equipped with a storage unit 59 that pre-stores the learning model constructed by the machine learning device. In addition, in the present embodiment, the machine learning device and the controller 5 are represented as different structures, but the controller 5 may also be a structure that performs at least a part of the functions of the machine learning device. The machine learning device has a CPU, a memory, etc., and can be composed of a microcomputer that uses software to implement specified functions, or can be composed of a hardware circuit that performs dedicated calculation processing. Figure 7 This is a schematic functional block diagram of the machine learning device in this embodiment. The machine learning device includes: a state variable acquisition unit 152, which acquires state variables (device operation information SV1, elastic membrane state information SV2) as learning data; and a learning model generation unit 154, which learns and generates a learning model based on the acquired state variables.

[0097] The state variable acquisition unit 152 of the machine learning device acquires the device operation information SV1 of the substrate processing device and the elastic membrane state information SV2, wherein the elastic membrane state information SV2 indicates the state of the membrane 204 used in the top ring 31 when the top ring (substrate holding device) 31 operates by the operation indicated by the device operation information SV1. The device operation information SV1 can be acquired by the controller 5. The device operation information SV1 includes the polishing process information SVp of the top ring 31 and the conveying process information SVt of the top ring 31. Here, the polishing process information SVp and the conveying process information SVt may be information measured by various sensors, or may be information indicating a control command issued by the controller 5.

[0098] The polishing process information SVp of the top ring 31 may include the number of wafers W processed using the film 204 or the usage time of the film 204. In addition, the polishing process information SVp may include the pressure of at least one of the center chamber 205, the bellows chamber 206, the outer chamber 207, and the edge chamber 208 (hereinafter also referred to as "the pressure chamber of the film 204") when the wafer W is pressed against the polishing pad 10 by the top ring 31 (during the polishing process), or the flow rate of the fluid supplied to the pressure chamber of the film 204. Furthermore, the polishing process information SVp may include at least one of the rotation speed of the top ring 31 during the polishing process, the rotation torque of the top ring 31 during the polishing process, the swing position (movement position) of the top ring 31 during the polishing process, the height position of the top ring 31 during the polishing process (the height position of the top ring 31 relative to the polishing table 30), the vertical movement (lifting and lowering) power of the top ring 31 generated by the vertical movement mechanism 124, the pressure of the retaining ring pressurizing chamber 209 during the polishing process, and the flow rate of the fluid supplied to the retaining ring pressurizing chamber 209 during the polishing process. In addition, the polishing process information SVp may include at least one of the rotation speed of the polishing pad 10 during the polishing process, the rotation torque of the polishing pad 10 during the polishing process, the surface temperature of the polishing pad 10, and the surface properties of the polishing pad 10. The surface temperature of the polishing pad 10 and the surface properties of the polishing pad 10 can use information detected by a contact or non-contact sensor. In addition, the polishing process information SVp includes at least one of the supply amount of the polishing liquid of the polishing liquid supply nozzle 32 during the polishing process, the supply position, and the temperature of the polishing liquid. These polishing process information SVp are information indicating the state of the polishing process using the film 204. Here, as the polishing process information SVp, the polishing method (control command value) of the controller 5 can be used, and the detection values ​​detected by various sensors possessed by the substrate processing device can also be used. The use of the polishing process information SVp is based on the assumption that the state of the film 204 changes according to the conditions of the polishing process and that the state of the polishing process is affected by the state of the film 204.

[0099] The transport processing information SVt of the top ring 31 may include at least one of the detachment time of each wafer of the detachment action of the wafer W from the top ring 31, the number of detachment actions of the wafer W using the membrane 204, and the pressure of the pressure chamber of the membrane 204 during the detachment action of the wafer W. In the present embodiment, the time taken for the detachment action of the wafer W detected by each sensor 811 to 813 is referred to as "detachment time" or "seating time". Here, the detachment time of the detachment action of the wafer W may be, for example, the time from the ejection of the pressurized fluid from the release nozzle 802 to the detection of the seating of the wafer W by the plurality of sensors 811 to 813. In addition, in this case, the seating time detected by each sensor 811 to 813 may be used, or the average of the seating time detected by each sensor 811 to 813 (also referred to as "average seating time tm") may be used. Furthermore, the transport processing information SVt may include the time difference Δt of the seating time detected by each sensor 811 to 813. The time difference Δt of the seating time can be obtained by calculating the difference of the detachment time detected by each sensor 811 to 813, or by calculating the difference of the seating time detected by each sensor 811 to 813. In addition, the transport processing information SVt of the top ring 31 can include at least one of the injection flow rate, injection pressure, injection time, and injection angle of the pressurized fluid injected from the release nozzle 802. In the top ring 31 of the present embodiment, the film 204 is used to transport the wafer W. And the transport processing information SVt is information indicating the state of the transport processing of the wafer W using the film 204. Here, as the transport processing information SVt, the transport method (control command value) of the controller 5 can be used, and the detection value detected by various sensors equipped in the substrate processing device can also be used. The use of the transport processing information SVt is based on the assumption that the state of the film 204 changes according to the conditions of the transport processing and that the state of the transport processing is affected by the state of the film 204.

[0100] Figure 8 FIG. 1 is a timing chart showing an example of detection signals of each sensor when the wafer is separated. Figure 8 , the detection signals Sg1 to Sg3 of the sensors 811 to 813 are shown. The detection signals Sg1 to Sg3 of this embodiment are "off" when the chip W is not detected by the sensors 811 to 813, and "on" when the chip W is detected by the sensors 811 to 813. Figure 8 In the figure, when the wafer W is detected by all sensors 811 to 813, the light projection from the light projection unit 815 stops, and the detection signals Sg1 to Sg3 become "off". As shown in the figure, in the normal delivery process of the wafer W, after the time t0 when the separation action of the wafer W starts, the detection signal Sg3 first becomes "on" (time t3), and later, the detection signals Sg1 and Sg2 become "on" (time t1, t2). Fig. 9 : is a diagram showing an example of the time difference between the seating times of each chip. Fig. 9 In the figure, the horizontal axis represents the number of wafers W processed since the new film 204 was used. In addition, the vertical axis represents the time difference Δt of the seating moment of each wafer when it is handed over from the top ring 31 to the substrate handover device 800. In addition, the time difference Δt of the seating moment is the time difference Δt between the moment when the wafer W is first detected by multiple sensors 811 to 813 (an example of the "first moment") and the moment when it is last detected (an example of the "second moment"). In addition, the time difference Δt of the seating moment can also be the time difference of the seating moment detected by any two sensors among the sensors 811 to 813. As shown in the figure, according to the research of the present inventors, if the state of the film 204 is poor, the time difference Δt of the moments t1 to t3 detected by such sensors 811 to 813 tends to become larger.

[0101] Fig.10 FIG. 1 is a diagram schematically showing an example of the detachment time of each wafer. Fig.10 In the figure, the horizontal axis represents the number of wafers W processed since the new film 204 was used. In addition, the vertical axis represents the seating time (average detachment time tm) of each wafer when it is transferred from the top ring 31 to the substrate transfer device 800. According to the research of the inventors, as the number of wafers W processed increases and the state of the film 204 deteriorates, the time taken for the wafer W to detach from the top ring 31 gradually increases or decreases. Fig.10 In the example shown, as the number of wafers W to be processed increases, the time required for the wafer W to be detached from the top ring 31 (average detachment time tm) gradually increases.

[0102] The elastic membrane state information SV2 is information indicating the state of the membrane 204 caused by the operation of the top ring 31 as indicated by the operation indicated by the above-mentioned device operation information SV1. The elastic membrane state information SV2 may use the state of the membrane 204 detected by various sensors provided in the controller 5. In addition, the elastic membrane state information SV2 may be obtained by providing a sensor or the like separately to the substrate processing apparatus, or by measuring the membrane 204 during or after use in a manufacturing facility or a dedicated learning site.

[0103] The elastic film state information SV2 may include at least one of the image data of the film 204 captured by the image capturing unit, the surface roughness of the film 204, and the elastic modulus of the film 204. Here, various image capturing units including a known image capturing unit may be used as the image capturing unit. In addition, the surface roughness and elastic modulus of the film 204 may be measured in a contact or non-contact manner with the film 204. The elastic film state information SV2 may be acquired over the entire region of the film 204 or may be acquired for a predetermined portion.

[0104] The learning model generation unit 154 learns the learning model (correlation between the device operation information SV1 and the elastic membrane state information SV2) according to an arbitrary learning algorithm generally referred to as machine learning. The learning model generation unit 154 repeatedly performs learning based on the state variables (device operation information SV1 and elastic membrane state information SV2) acquired by the state variable acquisition unit 152. The learning model generation unit 154 acquires a plurality of state variables, identifies features of the state variables, and interprets correlation.

[0105] In the present embodiment, the learning model generation unit 154 constructs a learning model by learning with a teacher. In addition, the learning model generation unit 154 may also perform reinforcement learning to learn the learning model. Reinforcement learning is a method of generating a learning model, which is a model that rewards the behavior (output) performed on the current state (input) in a certain environment to obtain the maximum reward. As an example of reinforcement learning, the learning model generation unit 154 has an evaluation value calculation unit 155 that calculates the evaluation value based on the state variable SV and a learning unit 156 that learns the learning model based on the evaluation value. As an example, the evaluation value calculation unit 155 may also be a structure that gives a greater reward as the time required for processing the chip W in the substrate processing device is shorter. In addition, as an example, the evaluation value calculation unit 155 may also be a structure that gives a greater reward as the grinding process of the chip W is more constant.

[0106] Refer again Figure 6 The decision unit 58 of the controller 5 determines the state of the membrane 204 based on the learning model constructed by machine learning and the device action information SV1 acquired by the state variable acquisition unit 52 of the controller 5. Here, the state variable acquisition unit 52 of the controller 5 can acquire the device action information SV1 in the same manner as the state variable acquisition unit 152 of the machine learning device. However, the device action information SV1 acquired by the state variable acquisition unit 52 of the controller 5 may be different from the device action information SV1 acquired by the state variable acquisition unit 152 of the machine learning device.

[0107] The decision unit 58 can output information similar to the elastic membrane state information SV2 input to the machine learning device as the state of the membrane 204. In addition, the decision unit 58 can also indicate the degree of degradation of the membrane 204 by numbers or the like based on the elastic membrane state information SV2 in a manner that can be easily understood by the user of the substrate processing apparatus, instead of or in addition to the elastic membrane state information SV2. Alternatively, the decision unit 58 can also output the durability period or the durability count until replacement of the membrane 204 is recommended based on the elastic membrane state information SV2.

[0108] As described above, the device operation information SV1 including the polishing process information SVp and the conveying process information SVt of the top ring 31 and the elastic film state information SV2 indicating the state of the film 204 when the top ring 31 is operated by the operation indicated by the device operation information SV1 are input, and a learning model is constructed by machine learning. Then, the controller 5 of the substrate processing apparatus inputs the device operation information SV1 to the learning model stored in the storage unit 59, and causes the learning model to output the elastic film state information SV2, thereby determining the state of the film 204. Thus, the state of the film 204 can be appropriately or easily determined, and substrate processing can be performed in the substrate processing apparatus.

[0109] The present invention can also be described in the following aspects.

[0110] [Method 1] According to method 1, an information processing device is proposed, comprising: an information acquisition unit, the information acquisition unit acquiring device action information including polishing process information and conveying process information as an action state of a substrate processing device when the substrate processing device is in action, the substrate processing device comprising a polishing table supporting a polishing pad, a top ring including an elastic membrane constituting a substrate holding surface and a pressure chamber, and a conveying table configured to receive and deliver the substrate from the top ring, the substrate processing device performing a polishing process of pressing the substrate against the polishing pad according to a fluid supplied to the pressure chamber and a conveying process of detaching the substrate from the elastic membrane and delivering the substrate to the conveying table, the polishing process information indicating a state of the polishing process, and the conveying process information indicating a state of the conveying process; and a state determination unit, the state determination unit inputting the device action information acquired by the information acquisition unit into a learning model that has learned a correlation between the device action information and the elastic membrane state information by machine learning, thereby determining the elastic membrane state information relative to the device action information, the elastic membrane state information indicating a state of the elastic membrane when the polishing process and / or the conveying process indicated by the device action information is performed. According to aspect 1, the state of the elastic film can be appropriately or easily determined.

[0111] [Method 2] According to method 2, in method 1, the elastic membrane state information includes at least one of image data of the elastic membrane captured by the imaging unit, surface roughness of the elastic membrane, and elastic modulus of the elastic membrane. According to method 2, the state of the elastic membrane can be appropriately determined.

[0112] [Method 3] According to method 3, in method 1 or 2, the elastic membrane state information includes a usable period or a usable count until the elastic membrane is replaced. According to method 3, the usable period or the usable count of the elastic membrane can be determined.

[0113] [Method 4] According to method 4, in methods 1 to 3, the transport process information includes at least one of the separation time of each substrate in the transport process, the number of times of the transport process, and the pressure in the pressure chamber during the transport process. According to method 4, the state of the elastic film can be appropriately determined.

[0114] [Method 5] According to method 5, in method 4, the substrate processing device includes a first sensor and a second sensor for detecting that the substrate has been delivered to the conveyor stage, the first sensor and the second sensor are configured to detect different parts of the substrate, and the conveying processing information includes a first detachment time when the first sensor detects that the substrate has been delivered to the conveyor stage and a second detachment time when the second sensor detects that the substrate has been delivered to the conveyor stage. According to method 5, based on the detection information of the plurality of sensors that detect that the substrate has been delivered to the conveyor stage, the state of the elastic membrane can be determined.

[0115] [Method 6] According to method 6, in method 4 or 5, the substrate processing device includes a first sensor and a second sensor for detecting that the substrate has been delivered to the conveyor stage, the first sensor and the second sensor are configured to detect different parts of the substrate, and the conveying processing information includes a time difference between a first moment when the first sensor detects that the substrate has been delivered to the conveyor stage and a second moment when the second sensor detects that the substrate has been delivered to the conveyor stage. According to method 6, the state of the elastic membrane can be determined based on the detection information of the plurality of sensors that detect that the substrate has been delivered to the conveyor stage.

[0116] [Method 7] According to method 7, in methods 4 to 6, the substrate processing device includes a release nozzle configured to spray a pressurized fluid into a gap between the substrate holding surface and the substrate during the transport process, and the transport process information includes at least one of a spray flow rate, a spray pressure, a spray time, and a spray angle of the pressurized fluid sprayed from the release nozzle. According to method 7, the state of the elastic film can be determined based on the action information of the release nozzle.

[0117] [Method 8] According to method 8, in methods 1 to 7, the device operation information includes usage history information of the elastic membrane, and the usage history information of the elastic membrane includes at least one of the number of substrates processed using the elastic membrane and the usage time of the elastic membrane. According to method 8, the state of the elastic membrane can be appropriately determined.

[0118] [Method 9] According to method 9, in methods 1 to 8, the polishing process information includes at least one of the pressure in the pressure chamber when the substrate is pressed against the polishing pad by the top ring and the flow rate of the fluid supplied into the pressure chamber. According to method 9, the state of the elastic film can be appropriately determined.

[0119] [Mode 10] According to Mode 10, in Mode 9, the top ring is configured to press the substrate against the polishing pad as the substrate holding surface rotates and / or moves, and the polishing process information includes at least one of a rotation speed of the substrate holding surface, a rotation torque for rotating the substrate holding surface, a moving position of the substrate holding surface, a power for moving the substrate holding surface, a height position of the top ring relative to the polishing table, a lifting power of the top ring, a pressure in a pressurizing chamber of a retaining ring provided by the top ring, and a supply flow rate to the pressurizing chamber of the retaining ring. According to Mode 10, the state of the elastic film can be appropriately determined.

[0120] [Method 11] According to method 11, in method 10, the polishing process information includes at least one of a polishing liquid supply flow rate, a polishing liquid supply position, and a polishing liquid temperature of a polishing liquid supply nozzle, and the polishing liquid supply nozzle is configured to supply the polishing liquid to the polishing pad. According to method 11, the state of the elastic film can be appropriately determined.

[0121] [Method 12] According to method 12, in methods 1 to 11, the top ring is configured to press the substrate against the polishing pad as the polishing table rotates, and the polishing process information includes at least one of a rotation speed of the polishing table, a rotation torque for rotating the polishing table, a surface temperature of the polishing pad, and a surface property of the polishing pad. According to method 12, the state of the elastic film can be appropriately determined.

[0122] [Method 13] According to method 13, a substrate processing apparatus is provided, comprising: a polishing table supporting a polishing pad; a top ring including an elastic membrane constituting a substrate holding surface and a pressure chamber; a conveying table configured to transfer a substrate from the top ring; and an information processing apparatus according to methods 1 to 12. According to method 13, the substrate processing apparatus can achieve the same effects as methods 1 to 12.

[0123] [Method 14] According to method 14, an information processing method is proposed, comprising: an information acquisition step of acquiring device operation information including polishing process information and conveying process information as an operation state of a substrate processing device when operating, the substrate processing device comprising a polishing table supporting a polishing pad, a top ring including an elastic membrane constituting a substrate holding surface and a pressure chamber, and a conveying table configured to receive a substrate from the top ring, the substrate processing device performing a polishing process of pressing the substrate against the polishing pad according to a fluid supplied to the pressure chamber and a conveying process of detaching the substrate from the elastic membrane and delivering the substrate to the conveying table, the polishing process information indicating a state of the polishing process, and the conveying process information indicating a state of the conveying process; and a state determination step of inputting the device operation information acquired by the information acquisition unit into a learning model that has learned a correlation between the device operation information and the elastic membrane state information by machine learning, thereby determining the elastic membrane state information relative to the device operation information, the elastic membrane state information indicating a state of the elastic membrane when the polishing process and / or the conveying process indicated by the device operation information is performed. According to method 14, the state of the elastic membrane can be appropriately or easily determined.

[0124] The above has been described the embodiments of the present invention, but the embodiments of the invention described above are for easy understanding of the present invention and do not limit the present invention. The present invention can be changed and improved without departing from its main purpose, and the present invention certainly includes its equivalents. In addition, within the scope of at least a part of the above-mentioned technical problem that can be solved or within the scope of at least a part of the effect that can be exerted, any combination of the embodiments and the modified examples can be performed, and any combination of the constituent elements described in the scope of the request and the specification can be performed or can be omitted.

[0125] This application claims priority based on Japanese Patent Application No. 2023-137892 filed on August 28, 2023. All disclosures including the specification, scope of claims, specification drawings, and specification abstract of Japanese Patent Application No. 2023-137892 are incorporated herein by reference as a whole. All disclosures including the specification, scope of claims, specification drawings, and specification abstract of Japanese Patent Publication No. 2012-178608 (Patent Document 1) are incorporated herein by reference as a whole.

Claims

1. An information processing device, characterized in that: have: an information acquisition unit that acquires device operation information including polishing process information and conveying process information as an operation state of a substrate processing device when the substrate processing device is in operation, the substrate processing device including a polishing table supporting a polishing pad, a top ring including an elastic membrane constituting a substrate holding surface and a pressure chamber, and a conveying table configured to receive and deliver a substrate from the top ring, the substrate processing device performing a polishing process of pressing the substrate against the polishing pad according to a fluid supplied to the pressure chamber and a conveying process of detaching the substrate from the elastic membrane and delivering the substrate to the conveying table, the polishing process information indicating a state of the polishing process, and the conveying process information indicating a state of the conveying process; as well as A state determination unit inputs the device action information acquired by the information acquisition unit into a learning model that has learned the correlation between the device action information and the elastic membrane state information through machine learning, thereby determining the elastic membrane state information relative to the device action information, the elastic membrane state information indicating the state of the elastic membrane when the grinding process and / or the conveying process indicated by the device action information is performed.

2. The information processing device according to claim 1, characterized in that The elastic membrane state information includes at least one of image data of the elastic membrane, surface roughness of the elastic membrane, and elastic modulus of the elastic membrane.

3. The information processing device according to claim 1, characterized in that The elastic film state information includes a durability period or a durability count until the elastic film is replaced.

4. The information processing device according to claim 1, characterized in that The transport process information includes at least one of a separation time of each substrate in the transport process, the number of times of the transport process, and a pressure in the pressure chamber during the transport process.

5. The information processing device according to claim 4, characterized in that The substrate processing apparatus includes a first sensor and a second sensor for detecting that the substrate has been transferred to the conveyor stage. The first sensor and the second sensor are configured to detect different locations of the substrate, The transport processing information includes a first detachment time when the first sensor detects that the substrate has been delivered to the transport stage and a second detachment time when the second sensor detects that the substrate has been delivered to the transport stage.

6. The information processing device according to claim 4, characterized in that The substrate processing apparatus includes a first sensor and a second sensor for detecting that the substrate has been transferred to the conveyor stage. The first sensor and the second sensor are configured to detect different locations of the substrate, The transport processing information includes a time difference between a first time when the first sensor detects that the substrate has been delivered to the transport stage and a second time when the second sensor detects that the substrate has been delivered to the transport stage.

7. The information processing device according to claim 4, characterized in that: The substrate processing apparatus includes a release nozzle configured to eject a pressurized fluid into a gap between the substrate holding surface and the substrate during the conveying process. The delivery processing information includes at least one of an injection flow rate, an injection pressure, an injection time, and an injection angle of the pressurized fluid injected from the release nozzle.

8. The information processing device according to any one of claims 1 to 7, characterized in that: The device action information includes the usage history information of the elastic membrane, The use history information of the elastic film includes at least one of the number of substrates processed by the elastic film and the use time of the elastic film.

9. The information processing device according to any one of claims 1 to 7, characterized in that: The polishing process information includes at least one of the pressure in the pressure chamber when the substrate is pressed against the polishing pad by the top ring and the flow rate of the fluid supplied into the pressure chamber.

10. The information processing device according to claim 9, characterized in that: The top ring is configured to press the substrate against the polishing pad as the substrate holding surface rotates and / or moves. The polishing processing information includes at least one of a rotation speed of the substrate holding surface, a rotation torque for rotating the substrate holding surface, a moving position of the substrate holding surface, a power for moving the substrate holding surface, a height position of the top ring relative to the polishing table, a lifting power of the top ring, a pressure in a pressurizing chamber of a baffle ring provided to the top ring, and a supply flow rate into the pressurizing chamber of the baffle ring.

11. The information processing device according to any one of claims 1 to 7, characterized in that: The polishing process information includes at least one of a polishing liquid supply flow rate, a polishing liquid supply position, and a polishing liquid temperature of a polishing liquid supply nozzle configured to supply the polishing liquid to the polishing pad.

12. The information processing device according to any one of claims 1 to 7, characterized in that: The top ring is configured to press the substrate against the polishing pad as the polishing table rotates. The polishing process information includes at least one of a rotation speed of the polishing table, a rotation torque for rotating the polishing table, a surface temperature of the polishing pad, and a surface property of the polishing pad.

13. A substrate processing device, characterized in that: have: a grinding table supporting a grinding pad; a top ring including an elastic membrane forming a substrate holding surface and a pressure chamber; a conveyor stage configured to deliver a substrate from the top ring; and The information processing device according to any one of claims 1 to 7.

14. An information processing method, characterized in that: Include: an information acquisition step of acquiring device operation information including polishing process information and conveying process information as an operation state of a substrate processing device when the substrate processing device is in operation, the substrate processing device comprising a polishing table supporting a polishing pad, a top ring including an elastic membrane constituting a substrate holding surface and a pressure chamber, and a conveying table configured to receive and deliver a substrate from the top ring, the substrate processing device performing a polishing process of pressing the substrate against the polishing pad according to a fluid supplied to the pressure chamber and a conveying process of detaching the substrate from the elastic membrane and delivering the substrate to the conveying table, the polishing process information indicating a state of the polishing process, and the conveying process information indicating a state of the conveying process; as well as A state determination step is performed by inputting the device action information acquired by the information acquisition unit into a learning model that has learned the correlation between the device action information and the elastic membrane state information through machine learning, thereby determining the elastic membrane state information relative to the device action information, wherein the elastic membrane state information represents the state of the elastic membrane when the grinding process and / or the conveying process indicated by the device action information is performed.

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