Light-emitting substrate and preparation method thereof, backlight module and display device

By placing the light emitting device, the color conversion layer and the scattering layer in the groove in the light emitting substrate of the display device, the problem of large thickness of the existing display device is solved, and a thinner display device design is realized.

CN119562670APending Publication Date: 2025-03-04BOE TECHNOLOGY GROUP CO LTD +1
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Patent Information

Application Number
CN202311119240.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-08-31
Publication Date
2025-03-04

AI Technical Summary

Technical Problem

The existing display devices are relatively thick and it is difficult to achieve a thin and light design.

Method used

A light emitting substrate is designed, including a substrate, a light emitting device, a color conversion layer and a scattering layer, wherein at least one of the light emitting device, a color conversion layer and a scattering layer are located in the first groove, thereby reducing the size of the display device in the thickness direction.

Benefits of technology

By placing the key components in the grooves, the thickness reduction of the display device is achieved, enhancing its thinning characteristics.

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Abstract

The embodiment of the invention provides a light-emitting substrate, a preparation method of the light-emitting substrate, a backlight module and a display device, relates to the technical field of display, and aims to reduce the thickness of the display device. The light emitting substrate includes a substrate, a light emitting device, a color conversion layer, and a scattering layer. The substrate is provided with a first surface and a second surface which are oppositely arranged; the first surface of the substrate is provided with a first groove. The light-emitting device is arranged on the first surface of the substrate; the light emitting device includes a light emitting region. The color conversion layer is arranged on the side, facing the second surface, of the light-emitting device; and the orthographic projection of the light-emitting region of the light-emitting device on the substrate is located in the range of the orthographic projection of the color conversion layer on the substrate. The scattering layer is arranged on one side of the color conversion layer away from the light-emitting device; and the orthographic projection of the light-emitting region of the light-emitting device on the substrate is located in the range of the orthographic projection of the scattering layer on the substrate. Wherein at least one of the light emitting device, the color conversion layer and the scattering layer is located in the first groove. The method is used for image display.
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Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting substrate and a preparation method thereof, a backlight module, and a display device. Background Art

[0002] With the development of light emitting diode technology, light emitting substrates using sub-millimeter (Mini) or even micron (Micro) light emitting diodes (Light Emitting Diode, LED) have been widely used. As a result, not only can the screen contrast of products such as liquid crystal displays (Liquid Crystal Display, LCD) using the light emitting substrate reach the level of organic light emitting diode (Organic Light Emitting Diode, OLED) display products, but also the products can retain the technical advantages of liquid crystal display, thereby improving the display effect of the picture and providing users with a better visual experience. Among them, the thinness of display devices is a constant pursuit of those skilled in the art. Summary of the invention

[0003] The present disclosure provides a light-emitting substrate and a preparation method thereof, a backlight module, and a display device, so as to reduce the thickness of the display device.

[0004] In one aspect, a light-emitting substrate is provided. The light-emitting substrate includes a substrate, a light-emitting device, a color conversion layer, and a scattering layer. The substrate has a first surface and a second surface arranged opposite to each other, and the first surface of the substrate is provided with a first groove. The light-emitting device is arranged on the first surface of the substrate. The light-emitting device includes a light-emitting area, and the orthographic projection of the light-emitting area of ​​the light-emitting device on the substrate is located within the range of the orthographic projection of the color conversion layer on the substrate; the orthographic projection of the light-emitting area of ​​the light-emitting device on the substrate is located within the range of the orthographic projection of the scattering layer on the substrate. The color conversion layer is arranged on the side of the light-emitting device facing the second surface. The scattering layer is arranged on the side of the color conversion layer away from the light-emitting device. Wherein, at least one of the light-emitting device, the color conversion layer, and the scattering layer is located in the first groove.

[0005] In some embodiments, the light-emitting substrate further comprises a first circuit layer, the first circuit layer being disposed on the first surface of the substrate. The first circuit layer comprises a first pad and a second pad. The first pad, the second pad and the light-emitting device are disposed in the first groove. The light-emitting device is connected to the first pad and the second pad.

[0006] Alternatively, the light-emitting substrate further includes a second circuit layer and a third circuit layer. The second circuit layer is disposed on the first surface of the substrate. The second circuit layer includes a first solder pad. The first solder pad and the light-emitting device are disposed in the first groove. The light-emitting device is connected to the first solder pad. The third circuit layer is disposed on a side of the light-emitting device away from the substrate. The third circuit layer includes a second solder pad, and the light-emitting device is also connected to the second solder pad.

[0007] In some embodiments, the light-emitting substrate includes a first circuit layer, and the light-emitting substrate also includes a first insulating layer and a first reflective layer. The first insulating layer is disposed on a side of the light-emitting device away from the substrate. The first reflective layer is disposed on a side of the first insulating layer away from the substrate. Alternatively, the light-emitting substrate includes a second circuit layer and a third circuit layer, and the light-emitting substrate also includes a first insulating layer, and the first insulating layer is disposed between the second circuit layer and the third circuit layer.

[0008] In some embodiments, the transmittance of the first insulating layer is greater than or equal to 80%, and the first insulating layer fills the first groove. The light-emitting substrate further includes a reflective structure, which is disposed on at least one side of the circumference of the light-emitting device. The reflective structure is configured to reflect the circumferential light output of the light-emitting device so that the circumferential light output of the light-emitting device is emitted toward the second surface of the substrate.

[0009] In some embodiments, the reflective structure includes a second groove and a plurality of reflective balls. The second groove is disposed on the first surface of the substrate. The plurality of reflective balls are disposed in the second groove.

[0010] In some embodiments, the cross section of the second groove is substantially an isosceles triangle, and the vertex angle of the isosceles triangle is 45° to 55°. The cross section is substantially perpendicular to the boundary between the second groove and the first groove. And / or, the maximum depth of the second groove in the first direction is greater than or equal to the thickness of the light emitting device in the first direction. The first direction is substantially perpendicular to the second surface.

[0011] In some embodiments, the material of the reflective sphere includes photonic crystal.

[0012] In some embodiments, the reflective structure includes a plurality of dielectric holes and a plurality of reflective columns. The plurality of dielectric holes are arrayed on the first surface of the substrate. One reflective column is disposed in one dielectric hole.

[0013] In some embodiments, the angle between the central axis of the dielectric hole and the first direction is 20° to 35°. The first direction is substantially perpendicular to the second surface. Or, the maximum depth of the dielectric hole in the first direction is greater than or equal to the thickness of the light emitting device in the first direction.

[0014] In some embodiments, the material of the reflective column includes photonic crystal.

[0015] In some embodiments, the light-emitting substrate further includes a fourth circuit layer, and the fourth circuit layer is disposed on the first surface of the substrate. The fourth circuit layer includes a first solder pad and a second solder pad. The first solder pad and the second solder pad are disposed on opposite sides of the first groove. The orthographic projection of the light-emitting area of ​​the light-emitting device on the second surface of the substrate is located within the range of the orthographic projection of the first groove on the second surface of the substrate. And the light-emitting device is connected to the first solder pad and the second solder pad outside the first groove.

[0016] In some embodiments, the light-emitting substrate further includes a second reflective layer, which is disposed on a side of the light-emitting device away from the substrate and at least covers the light-emitting device.

[0017] In some embodiments, the light-emitting substrate further includes a dimming structure, which is disposed on the second surface of the substrate. The dimming structure is configured to adjust the light output of the first area and the second area. The first area is the area of ​​the substrate where the first groove is located, and the second area is the area of ​​the substrate excluding the first groove.

[0018] In some embodiments, the dimming structure includes a first grating, which is disposed on the second surface of the substrate. A duty cycle of the first grating in the first region is smaller than a duty cycle of the first grating in the second region.

[0019] In some embodiments, in the first region, the slits of the first grating are substantially equal. And / or, two adjacent first grooves in the second direction are symmetrical with respect to the first axis, and the second direction is substantially perpendicular to the extension direction of the slits of the first grating. In the second region, from the first groove to the first axis, the slits of the first grating gradually become larger.

[0020] In some embodiments, the dimming structure includes a light guide plate and a plurality of mesh dots. The light guide plate is disposed on the second surface of the substrate. A plurality of third grooves are disposed on a side of the light guide plate away from the substrate. The mesh dots are located in the third grooves. The density of the mesh dots in the first area is greater than the density of the mesh dots in the second area.

[0021] In some embodiments, two adjacent first grooves are symmetrical with respect to the second axis, and in the second area, the density of the dots gradually increases from the first groove to the second axis.

[0022] In some embodiments, the light emitting substrate further comprises a second grating, the second grating being disposed in the first groove and between the color conversion layer and the scattering layer, and the second grating being configured to transmit light whose polarization direction is substantially parallel to a third direction, and the third direction is substantially parallel to the second surface.

[0023] In some embodiments, the color conversion layer is disposed in the first groove. The light-emitting substrate further includes a first encapsulation layer, which is disposed on a side of the color conversion layer away from the substrate.

[0024] In some embodiments, a sidewall of at least one side of the first groove has a step structure.

[0025] In some embodiments, the orthographic projections of the light-emitting areas of at least two light-emitting devices on the second surface of the substrate are located within the range of the orthographic projection of the same first groove on the second surface of the substrate.

[0026] In some embodiments, a plurality of the light-emitting devices are arranged in an array, and the orthographic projections of the light-emitting areas of at least two light-emitting devices in the same row and / or column on the second surface of the substrate are within the range of the orthographic projection of the same first groove on the second surface of the substrate.

[0027] In some embodiments, the light-emitting substrate includes a light-emitting unit, and the light-emitting unit includes a plurality of light-emitting devices connected in series and / or in parallel. The orthographic projections of the light-emitting areas of the plurality of light-emitting devices in the same light-emitting unit on the second surface of the substrate are located within the range of the orthographic projection of the same first groove on the second surface of the substrate.

[0028] In some embodiments, the light emitting substrate further includes a third reflective layer, wherein the third reflective layer covers the first surface of the substrate and exposes at least a portion of the first groove.

[0029] In some embodiments, the light emitting substrate further includes a reflective prism, and the reflective prism is disposed between the third reflective layer and the substrate.

[0030] In the light-emitting substrate of the embodiment of the present disclosure, at least one of the light-emitting device, the color conversion layer and the scattering layer is located in the first groove. In this case, the components located in the first groove and the substrate jointly occupy part of the size of the display device in the thickness direction, that is, the components located in the first groove do not need to occupy additional size of the display device in the thickness direction. Based on this, compared with the related art, the thickness of the display device provided by the embodiment of the present disclosure will be thinner, and the thinned thickness is roughly the thickness of the components located in the first groove, so that the display device is thinner and lighter.

[0031] In another aspect, a backlight module is provided. The backlight module comprises a light-emitting substrate, a diffuser and a composite film according to any of the above embodiments. The light-emitting substrate has a light-emitting side and a non-light-emitting side opposite to each other. The diffuser is arranged on the light-emitting side of the light-emitting substrate. The composite film is arranged on a side of the diffuser away from the light-emitting substrate.

[0032] In another aspect, a display device is provided. The display device comprises a backlight module and a display panel according to any of the above embodiments. The light-emitting substrate has a light-emitting side and a non-light-emitting side opposite to each other, and the display panel is arranged on a side of the composite film in the backlight module away from the light-emitting substrate.

[0033] In some embodiments, the light-emitting substrate includes a second grating. The display panel includes a liquid crystal layer and a first polarizer, and the first polarizer is arranged on a side of the liquid crystal layer away from the light-emitting substrate. The transmission axis of the first polarizer is substantially perpendicular or substantially parallel to the polarization direction of the light selectively transmitted by the second grating.

[0034] In another aspect, a method for preparing a light-emitting substrate is provided. The method for preparing a light-emitting substrate is used to prepare the light-emitting substrate of any of the above embodiments, and the method comprises:

[0035] A first groove is formed on a substrate. The substrate has a first surface and a second surface that are opposite to each other; and the first surface of the substrate is provided with the first groove.

[0036] A scattering layer, a color conversion layer and a light-emitting device are formed. The color conversion layer is arranged on the side of the light-emitting device facing the second surface. The light-emitting device includes a light-emitting area, and the orthographic projection of the light-emitting area of ​​the light-emitting device on the substrate is located within the range of the orthographic projection of the color conversion layer on the substrate. The scattering layer is arranged on the side of the color conversion layer away from the light-emitting device; and the orthographic projection of the light-emitting area of ​​the light-emitting device on the substrate is located within the range of the orthographic projection of the scattering layer on the substrate. At least one of the light-emitting device, the color conversion layer and the scattering layer is located in the first groove.

[0037] In some embodiments, the forming of the scattering layer, the color conversion layer and the light-emitting device comprises: forming a scattering layer and a color conversion layer in the first groove in sequence. Forming a first encapsulation layer on a side of the color conversion layer away from the substrate. Forming a first circuit layer on a side of the first encapsulation layer away from the substrate; the first circuit layer comprises a first pad and a second pad. The first pad and the second pad are disposed in the first groove. Forming a light-emitting device in the first groove; the light-emitting device is connected to the first pad and the second pad.

[0038] In some embodiments, the forming of the scattering layer, the color conversion layer and the light-emitting device comprises: forming a scattering layer and a color conversion layer in sequence in the first groove. Forming a first encapsulation layer on a side of the color conversion layer away from the substrate. Forming a second circuit layer on a side of the first encapsulation layer away from the substrate; the second circuit layer comprises a first pad; the first pad is disposed in the first groove. Forming a light-emitting device in the first groove; the light-emitting device is connected to the first pad. Forming a third circuit layer on a side of the light-emitting device away from the substrate; the third circuit layer comprises a second pad, and the light-emitting device is also connected to the second pad.

[0039] In some embodiments, the forming of the scattering layer, the color conversion layer and the light-emitting device further includes: forming a first insulating layer. When the light-emitting substrate includes a first circuit layer, the first insulating layer is disposed on a side of the light-emitting device away from the substrate. When the light-emitting substrate includes a third circuit layer, the first insulating layer is disposed between the second circuit layer and the third circuit layer.

[0040] In some embodiments, the first insulating layer fills the first groove, and after forming the first groove, the preparation method further includes: forming a second groove; the second groove is disposed on the first surface of the substrate and is located on at least one side of the circumference of the first groove; and filling the second groove with a reflective ball.

[0041] In some embodiments, the first insulating layer fills the first groove, and after forming the first groove, the preparation method further includes: forming a plurality of dielectric holes; the plurality of dielectric holes are arranged on the first surface of the substrate and are located on at least one side of the circumference of the first groove. Reflective columns are filled in the dielectric holes; one reflective column is arranged in one dielectric hole.

[0042] In some embodiments, the forming of the scattering layer, the color conversion layer and the light-emitting device comprises: forming a scattering layer and a color conversion layer in sequence in the first groove. Forming a first encapsulation layer on a side of the color conversion layer away from the substrate. Forming a fourth circuit layer on a side of the first encapsulation layer away from the substrate; the fourth circuit layer comprises a first pad and a second pad; the first pad and the second pad are arranged on opposite sides of the first groove. Forming a light-emitting device on a side of the fourth circuit layer away from the substrate; the light-emitting device is connected to the first pad and the second pad outside the first groove; and the orthographic projection of the light-emitting area of ​​the light-emitting device on the second surface of the substrate is located within the range of the orthographic projection of the first groove on the second surface of the substrate.

[0043] In some embodiments, the preparation method further includes: forming a first grating on the second surface of the substrate. The duty ratio of the first grating in the first region is smaller than the duty ratio of the first grating in the second region. The first region is the region of the substrate where the first groove is located, and the second region is the region of the substrate excluding the first groove.

[0044] In some embodiments, the preparation method further includes: forming a light guide plate on the second surface of the substrate; a plurality of third grooves are provided on the side of the light guide plate away from the substrate; forming dots in the third grooves; the density of the dots in the first region is greater than the density of the dots in the second region; the first region is the region of the substrate where the first groove is located, and the second region is the region of the substrate excluding the first groove.

[0045] In some embodiments, during the process of forming the scattering layer, the color conversion layer and the light emitting device, a second grating is further formed. The second grating is disposed in the first groove and between the color conversion layer and the scattering layer. The second grating is configured to transmit light whose polarization direction is substantially parallel to a third direction, and the third direction is substantially parallel to the second surface.

[0046] In some embodiments, forming the first groove on the substrate comprises: etching the substrate to form a first initial groove, and etching a sidewall of at least one side of the first initial groove so that the sidewall of at least one side of the first initial groove forms a step structure.

[0047] The beneficial effects of the backlight module, display device and method for preparing the light-emitting substrate provided by the embodiments of the present disclosure are the same as the beneficial effects of the light-emitting substrate provided by the above technical solution, and will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the technical solutions in the present disclosure, the following briefly introduces the drawings required to be used in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the product involved in the embodiments of the present disclosure, the actual process of the method, the actual timing of the signal, etc.

[0049] Figure 1 is a structural diagram of a display device according to some embodiments;

[0050] Figure 2 is a structural diagram of another display device according to some embodiments;

[0051] Figure 3 An exploded view of a display device according to some embodiments

[0052] Figure 4 is a cross-sectional view of a display device according to some embodiments;

[0053] Figure 5 is a layout diagram of light-emitting devices of a light-emitting substrate according to some embodiments;

[0054] Figure 6 is an arrangement diagram of light-emitting devices of another light-emitting substrate according to some embodiments;

[0055] Figure 7 is a structural diagram of a light-emitting substrate according to some embodiments;

[0056] Figure 8 is a structural diagram of another light-emitting substrate according to some embodiments;

[0057] Fig. 9 is a structural diagram of yet another light-emitting substrate according to some embodiments;

[0058] Fig.10 is a structural diagram of another light-emitting substrate according to some embodiments;

[0059] Fig.11 is a structural diagram of another light-emitting substrate according to some embodiments;

[0060] Fig.12 is a structural diagram of another light-emitting substrate according to some embodiments;

[0061] Fig.13 is a structural diagram of another light-emitting substrate according to some embodiments;

[0062] Fig.14is a structural diagram of another light-emitting substrate according to some embodiments;

[0063] Fig.15 is a circuit diagram of a light-emitting substrate according to some embodiments;

[0064] Fig.16 is a circuit diagram of another light-emitting substrate according to some embodiments;

[0065] Fig.17 A circuit diagram for connecting data lines of a light-emitting substrate according to some embodiments;

[0066] Fig.18 for Fig.11 A top view of the light emitting substrate shown;

[0067] Fig.19 for Fig.12 A top view of the light emitting substrate shown;

[0068] Fig. 20 for Fig.11 The simulation result diagram of the light-emitting substrate shown;

[0069] Fig.21 for Fig.12 The simulation result diagram of the light-emitting substrate shown;

[0070] Fig. 22 is a structural diagram of a first grating according to some embodiments;

[0071] Fig.23 is a structural diagram of a rectangular grating according to some embodiments;

[0072] Fig.24 is a structural diagram of a tilted grating according to some embodiments;

[0073] Fig.25 is a structural diagram of a blazed grating according to some embodiments;

[0074] Fig.26 is a structural diagram of a two-dimensional grating according to some embodiments;

[0075] Fig. 27 is a structural diagram of another light-emitting substrate according to some embodiments;

[0076] Fig.28 is a structural diagram of another light-emitting substrate according to some embodiments;

[0077] Figure 29 to Figure 38 is a flow chart of a method for preparing a light-emitting substrate according to some embodiments;

[0078] Figure 39 to Figure 45 1 is a step diagram of a method for preparing a light-emitting substrate according to some embodiments. DETAILED DESCRIPTION

[0079] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

[0080] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms thereof, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open, inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0081] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0082] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0083] “At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0084] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0085] The use of "adapted to" or "configured to" herein is meant to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0086] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0087] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of variation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0088] As used herein, "parallel", "perpendicular", and "equal" include the conditions described and conditions similar to the conditions described, the range of which is within an acceptable range of deviations, wherein the acceptable range of deviations is determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "equal" includes absolute equality and approximate equality, wherein the acceptable range of deviations for approximate equality may include, for example, a difference between the two being equal that is less than or equal to 5% of either.

[0089] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0090] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of the layers and the area of ​​the regions are exaggerated for clarity. Therefore, variations in the shapes relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0091] In the embodiments of the present disclosure, the first node, the second node, the first control node, the second control node and other nodes do not represent actual existing components, but represent the junction points of related electrical connections in the circuit diagram, that is, these nodes are nodes formed by the equivalent junction points of related electrical connections in the circuit diagram.

[0092] In the embodiments of the present disclosure, the control electrode of each thin film transistor is the gate of the transistor, the first electrode is one of the source and drain of the thin film transistor, and the second electrode is the other of the source and drain of the thin film transistor. Since the source and drain of the thin film transistor can be symmetrical in structure, the source and drain thereof can be structurally indistinguishable, that is, the first electrode and the second electrode of the thin film transistor in the embodiments of the present disclosure can be structurally indistinguishable. Exemplarily, in the case where the transistor is a P-type transistor, the first electrode of the transistor is the source and the second electrode is the drain; exemplarily, in the case where the transistor is an N-type transistor, the first electrode of the transistor is the drain and the second electrode is the source.

[0093] In the embodiments of the present disclosure, the capacitor may be a capacitor device manufactured separately through a process, for example, a capacitor device is realized by manufacturing a special capacitor electrode, and each capacitor electrode of the capacitor may be realized by a metal layer, a semiconductor layer (for example, doped polysilicon), etc. The capacitor may also be a parasitic capacitor between transistors, or realized by the transistor itself and other devices and circuits, or realized by utilizing the parasitic capacitor between the circuits of the circuit itself.

[0094] like Figure 1 As shown, some embodiments of the present disclosure provide a display device 1000, which may be any device that displays images, whether in motion (eg, video) or fixed (eg, still image), and whether text or images.

[0095] For example, see Figure 1 and Figure 2The display device 1000 can be any product or component with a display function, such as a television, a laptop computer, a tablet computer, a mobile phone, a personal digital assistant (PDA), a navigator, a wearable device, a virtual reality (VR) device, etc.

[0096] For example, Figure 1 As shown, the display device 1000 may be a portable display product; for example, the display device 1000 may be Figure 1 For another example, see Figure 2 , the display device 1000 may be a wearable device; for example, the display device 1000 may be Figure 2 The watch shown in.

[0097] It should be noted that, depending on different application scenarios, the shape of the display surface of the display device 1000 is not unique, and the shape of the display surface of the display device 1000 can be any one of circular, elliptical or polygonal, which is not specifically limited in the embodiments of the present disclosure.

[0098] In some embodiments, see Figure 3 The display device 1000 may be a liquid crystal display device (LCD for short).

[0099] For some examples, see Figure 3 and Figure 4 , the display device 1000 includes a backlight module 400 and a display panel 200 .

[0100] For example, see Figure 3 and Figure 4 , the backlight module 400 includes a light emitting substrate 100 .

[0101] like Figure 3 and Figure 4 As shown, the light-emitting substrate 100 has a light-emitting side and a non-light-emitting side. The light-emitting side refers to the side from which the light-emitting substrate 100 emits light ( Figure 4 The non-light-emitting side refers to the other side opposite to the light-emitting side ( Figure 4 The display panel 200 is disposed on the light emitting side of the light emitting substrate 100 .

[0102] The light-emitting substrate 100 includes a plurality of light-emitting devices 10, which may include Micro LEDs and / or Mini LEDs. It should be noted that the size (e.g., length) of the Micro LED is less than 50 microns, for example, 10 to 50 microns. The size (e.g., length) of the Mini LED is 50 to 150 microns, for example, 80 to 120 microns.

[0103] In addition, see Figure 3 , Figure 5 and Figure 6 , a plurality of light emitting devices 10 are arranged in an array. Figure 5 As shown, a plurality of light emitting devices 10 are arranged in multiple rows and columns, each row includes at least two light emitting devices 10 arranged along a row direction X, and each column includes at least two light emitting devices 10 arranged along a column direction Y. The light emitting devices 10 in two adjacent rows are arranged alternately in the column direction Y. For another example, Figure 6 As shown, a plurality of light emitting devices 10 are arranged in multiple rows and columns, each row includes at least two light emitting devices 10 arranged along a row direction X, and each column includes at least two light emitting devices 10 arranged along a column direction Y. In two adjacent rows of light emitting devices 10, two adjacent light emitting devices 10 in the column direction Y are arranged in the same column. It should be noted that the row direction X intersects with the column direction Y, for example, the row direction X is substantially perpendicular to the column direction Y.

[0104] In the following, some embodiments of the present disclosure are schematically described by taking an example in which a plurality of light-emitting devices 10 are arranged into a plurality of rows and columns, and in two adjacent rows of light-emitting devices 10, two adjacent light-emitting devices 10 in the column direction Y are arranged in the same column. However, the embodiments of the present disclosure are not limited thereto, and any other arrangement methods may also be considered as long as the same technical concept is applied.

[0105] For some examples, see Figure 4 The backlight module 400 may further include a plurality of optical films 300. The light emitted by the light emitting device 10 passes through the optical films 300 and then is emitted to the display panel 200. That is, the display panel 200 is disposed on a side of the optical film 300 away from the light emitting substrate 100. It should be noted that the optical film 300 performs color conversion and uniform light processing on the light emitted by the light emitting device 10.

[0106] Among them, Figure 4 As shown, the light emitting device 10 can directly emit white light, which is then emitted toward the display panel 200 after being homogenized by the multiple optical films 300. Alternatively, the light emitting device 10 can also emit light of other colors (e.g., blue light), which is then emitted toward the display panel 200 after being color converted and homogenized by the multiple optical films 300.

[0107] For example, see Figure 4 , the plurality of optical films 300 include at least one of a scattering layer 310, a color conversion layer 320, a diffuser 330 and a composite film 340. The scattering layer 310, the color conversion layer 320, the diffuser 330 and the composite film 340 are sequentially arranged away from the display panel 200. For example, the diffuser 330 can be arranged on the light emitting side of the light emitting substrate 100, the composite film 340 is arranged on the side of the diffuser 330 away from the light emitting substrate 100, and the scattering layer 310 and the color conversion layer 320 are arranged on the side of the diffuser 330 close to the light emitting substrate 100. At this time, the display panel 200 is arranged on the side of the composite film 340 away from the light emitting substrate.

[0108] The scattering layer 310 can blur the light emitted by the light emitting device 10 and provide support for the color conversion layer 320, the diffuser 330 and the composite film 340. The color conversion layer 320 can convert the light of a certain color emitted by the light emitting device 10 into white light under the excitation of the light, so as to improve the utilization rate of the light energy of the light emitting device 10. The diffuser 330 can homogenize the light passing through the diffuser 330. The composite film 340 can improve the light extraction efficiency of the light emitting substrate 100, thereby improving the display brightness of the display device 1000.

[0109] It should be noted that the scattering layer 310 includes scattering particles, and the scattering particles include titanium dioxide and / or silicon dioxide. The composite film 340 may include a brightness enhancement film (BEF) and a reflective polarized brightness enhancement film (DBEF), which utilizes the principles of total reflection, refraction and polarization to increase the light flux within a certain angle range, so as to increase the brightness of the display device 1000.

[0110] For example, Figure 4 As shown, the light emitting device 10 emits blue light. The color conversion layer 320 may include a red quantum dot material, a green quantum dot material, and a transparent material. When the blue light emitted by the light emitting device 10 passes through the red quantum dot material, it is converted into red light; when the blue light passes through the green quantum dot material, it is converted into green light; the blue light can directly pass through the transparent material; then, the blue light, the red light, and the green light are mixed and superimposed in a certain proportion to present white light. Finally, the scattering layer 310 and the diffuser 330 can mix the white light to improve the light shadow produced by the light emitting substrate 100 and improve the display quality of the display device 1000.

[0111] In the related art, all optical films are arranged on the light-emitting side of the light-emitting substrate, which results in a large thickness of the entire display device, which is not conducive to a lightweight and thin design of the display device.

[0112] Based on this, see Figure 7 to Figure 14 Some embodiments of the present disclosure provide a light-emitting substrate 100 , including a light-emitting device 10 , a substrate 20 , a scattering layer 310 , and a color conversion layer 320 .

[0113] like Figure 7 to Figure 14 As shown, the substrate 20 has a first surface 20A and a second surface 20B which are arranged opposite to each other. The first surface 20A of the substrate 20 is provided with a first groove 21 .

[0114] It should be noted that the material of the substrate 20 may include a rigid material. For example, the material of the substrate 20 includes glass and / or polymethyl methacrylate (PMMA for short).

[0115] like Figure 7 to Figure 14 As shown, the light emitting device 10 is disposed on the first surface 20A of the substrate 20. The light emitting device 10 includes a light emitting area S, and the orthographic projection of the light emitting area S on the substrate 20 is located within the range of the orthographic projection of the color conversion layer 320 on the substrate 20. It should be noted that the light emitting area S refers to the area where the light emitting device 10 emits light.

[0116] like Figure 7 to Figure 14 As shown, the color conversion layer 320 is disposed on the side of the light emitting device 10 facing the second surface 20B. The scattering layer 310 is disposed on the side of the color conversion layer 320 away from the light emitting device 10.

[0117] On this basis, at least one of the light emitting device 10, the color conversion layer 320 and the scattering layer 310 is located in the first groove 21. In this case, the components located in the first groove 21 and the substrate 20 jointly occupy part of the size of the display device 1000 in the thickness direction Z, that is, the components located in the first groove 21 do not need to additionally occupy the size of the display device 1000 in the thickness direction Z. Based on this, compared with the related art, the thickness of the display device 1000 provided in the embodiment of the present disclosure is thinner, and the thinned thickness is roughly the thickness of the components located in the first groove 21, so that the display device 1000 is thinner.

[0118] It should be noted that the thickness direction Z is substantially perpendicular to the second surface 20B of the substrate 20. The thickness direction Z is substantially perpendicular to the row direction X and substantially perpendicular to the column direction Y.

[0119] For example, Figure 7 , Figure 8 and Fig.10As shown, the light emitting device 10 and the color conversion layer 320 are located in the first groove 21. In this case, the light emitting device 10 and the color conversion layer 320 located in the first groove 21 and the substrate 20 jointly occupy part of the size of the display device 1000 in the thickness direction Z, that is, the light emitting device 10 and the color conversion layer 320 do not need to additionally occupy the size of the display device 1000 in the thickness direction Z, so that the thickness of the display device 1000 is reduced, and the reduced thickness is approximately the sum of the thicknesses of the light emitting device 10 and the color conversion layer 320.

[0120] For example, Fig. 9 As shown, the light emitting device 10, the color conversion layer 320 and the scattering layer 310 are all located in the first groove 21. In this case, the light emitting device 10, the color conversion layer 320 and the scattering layer 310 located in the first groove 21, together with the substrate 20, occupy part of the size of the display device 1000 in the thickness direction Z, that is, the light emitting device 10, the color conversion layer 320 and the scattering layer 310 do not need to additionally occupy the size of the display device 1000 in the thickness direction Z, so that the thickness of the display device 1000 is reduced, and the reduced thickness is approximately the sum of the thicknesses of the light emitting device 10, the color conversion layer 320 and the scattering layer 310.

[0121] For example, Fig.11 and Fig.12 As shown, the light emitting device 10 is located in the first groove 21. In this case, the light emitting device 10 and the substrate 20 located in the first groove 21 jointly occupy part of the size of the display device 1000 in the thickness direction Z, that is, the light emitting device 10 does not need to additionally occupy the size of the display device 1000 in the thickness direction Z, so that the thickness of the display device 1000 is reduced, and the reduced thickness is approximately the thickness of the light emitting device 10.

[0122] For example, Fig.13 and Fig.14 As shown, the color conversion layer 320 and the scattering layer 310 are located in the first groove 21. In this case, the color conversion layer 320 and the scattering layer 310 located in the first groove 21 and the substrate 20 jointly occupy part of the size of the display device 1000 in the thickness direction Z, that is, the color conversion layer 320 and the scattering layer 310 do not need to additionally occupy the size of the display device 1000 in the thickness direction Z, so that the thickness of the display device 1000 is reduced, and the reduced thickness is approximately the sum of the thicknesses of the color conversion layer 320 and the scattering layer 310.

[0123] When the color conversion layer 320 is disposed in the first groove 21, see Figure 7 to Figure 10 , Fig.13 and Fig.14The above-mentioned light-emitting substrate 100 also includes a first encapsulation layer 450, which is arranged on the side of the color conversion layer 320 away from the substrate 20 to protect the color conversion layer 320, thereby reducing the risk of failure of the color conversion layer 320 caused by water and oxygen corrosion.

[0124] The coverage area of ​​the first encapsulation layer 450 can be changed according to actual needs. Fig. 9 and Fig.10 , the first encapsulation layer 450 is located in the first groove 21, saving materials. Figure 7 , Figure 8 , Fig.13 and Fig.14 The first encapsulation layer 450 covers the entire substrate 20 and is partially located in the first groove 21 , which can reduce the patterning process of the first encapsulation layer 450 and simplify the process.

[0125] In some embodiments, see Figure 7 , Fig.11 and Fig.12 The light emitting substrate 100 further includes a first circuit layer 40 , and the first circuit layer 40 is disposed on the first surface 20A of the substrate 20 .

[0126] Among them, Figure 7 , Fig.11 and Fig.12 As shown, the first circuit layer 40 includes a first pad 41 and a second pad 42, the light-emitting device 10, the first pad 41 and the second pad 42 are all arranged in the first groove 21, and the light-emitting device 10 is connected to the first pad 41 and the second pad 42 to receive a light-emitting signal. Figure 7 The anode and cathode of the light emitting device 10 are located on the same side of the light emitting device 10 .

[0127] It should be noted that the first circuit layer 40 may be a single-layer structure or a multi-layer structure, which is not specifically limited in the embodiment of the present disclosure.

[0128] For some examples, see Figure 7 , Fig.15 and Fig.16 The first circuit layer 40 may further include a driving element 43 and a signal line 44 .

[0129] like Fig.15 and Fig.16 As shown, the signal line 44 may include a data line 441 , a gate line 442 , and a voltage signal line 443 .

[0130] On this basis, the driving element 43 is connected to the data line 441, the gate line 442 and the voltage signal line 443 to receive the electrical signal required to drive the light emitting device 10 to emit light. Moreover, the driving element 43 is connected to the light emitting device 10 to generate and transmit the driving signal to drive the light emitting device 10 to emit light.

[0131] The driving element 43 may include a micro integrated circuit chip or a driving circuit composed of a plurality of interconnected thin film transistors.

[0132] For example, see Fig.15 and Fig.16 , the driving element 43 includes a first transistor T1, a second transistor T2 and a first capacitor C1.

[0133] like Fig.15 and Fig.16 As shown, the first electrode of the first transistor T1 is electrically connected to the voltage signal line 443, the second electrode of the first transistor T1 is electrically connected to the light emitting device 10, and the control electrode of the first transistor T1 is electrically connected to the fifth node N5. The first electrode of the second transistor T2 is electrically connected to the data line 441, the second electrode of the second transistor T2 is electrically connected to the fifth node N5, and the control electrode of the second transistor T2 is electrically connected to the gate line 442. The first plate of the first capacitor C1 is electrically connected to the voltage signal line 443, and the second plate of the first capacitor C1 is electrically connected to the fifth node N5.

[0134] In this case, the driving element 43 may drive the corresponding light emitting device 10 to emit light or not emit light under the control of the signals received at the data line 441 and the gate line 442 .

[0135] In addition, one driving element 43 may drive one light emitting device 10 or multiple light emitting devices 10 .

[0136] For example, see Fig.15 , Fig.16 , Fig. 27 and Fig.28 The light emitting substrate 100 includes a plurality of light emitting units 110 , and each light emitting unit 110 includes a plurality of light emitting devices 10 connected in series and / or in parallel.

[0137] For example, Fig.15 As shown, the voltage signal line 443 includes a first voltage signal line 4431 and a second voltage signal line 4432 , and the voltage transmitted by the first voltage signal line 4431 is smaller than the voltage transmitted by the second voltage signal line 4432 .

[0138] The driving element 43 is connected to the second voltage signal line 4432. Each light-emitting unit 110 includes two groups of light-emitting devices 10 connected in parallel, and each group includes two light-emitting devices 10 connected in series. In the two light-emitting devices 10 connected in series, the first pole of the first light-emitting device 10 is electrically connected to the driving element 43, the second pole of the first light-emitting device 10 is electrically connected to the first pole of the second light-emitting device 10, and the second pole of the second light-emitting device 10 is connected to the first voltage signal line 4431. At this time, one driving element 43 drives multiple light-emitting devices 10 in one light-emitting unit 110.

[0139] For example, Fig.16 As shown, the voltage signal line 443 includes a first voltage signal line 4431, a second voltage signal line 4432, a third voltage signal line 4433 and a fourth voltage signal line 4434. Moreover, the voltage transmitted by the first voltage signal line 4431 is smaller than the voltage transmitted by the second voltage signal line 4432; the voltage transmitted by the second voltage signal line 4432 is smaller than the voltage transmitted by the third voltage signal line 4433; and the voltage transmitted by the third voltage signal line 4433 is smaller than the voltage transmitted by the fourth voltage signal line 4434.

[0140] Each light-emitting unit 110 includes four light-emitting devices 10, and the four light-emitting devices 10 are respectively a first light-emitting device 11, a second light-emitting device 12, a third light-emitting device 13 and a fourth light-emitting device 14. A first pole of the first light-emitting device 11 is electrically connected to a first node N1, and a second pole of the first light-emitting device 11 is electrically connected to a second node N2. A first pole of the second light-emitting device 12 is electrically connected to a second node N2, and a second pole of the second light-emitting device 12 is electrically connected to a third node N3. A first pole of the third light-emitting device 13 is electrically connected to a third node N3, and a second pole of the third light-emitting device 13 is electrically connected to a fourth node N4. A first pole of the fourth light-emitting device 14 is electrically connected to the first node N1, and a second pole of the fourth light-emitting device 14 is electrically connected to a fourth node N4.

[0141] Furthermore, the first node N1, the second node N2, the third node N3 and the fourth node N4 are respectively connected to a driving element 43. At this time, one driving element 43 can correspondingly drive one or more light emitting devices 10, which can be specifically controlled according to the required brightness.

[0142] For example, see Fig.16 A driving element 43 connected to the first node N1 is a first driving element 431, a driving element 43 connected to the second node N2 is a second driving element 432, a driving element 43 connected to the third node N3 is a third driving element 433, and a driving element 43 connected to the fourth node N4 is a fourth driving element 434.

[0143] Among them, the first driving element 431 is electrically connected to the first voltage signal line 4431, the second driving element 432 is electrically connected to the second voltage signal line 4432, the third driving element 433 is electrically connected to the third voltage signal line 4433, and the fourth driving element 434 is electrically connected to the fourth voltage signal line 4434. On the basis of the above, the first driving element 431, the second driving element 432, the third driving element 433 and the fourth driving element 434 are electrically connected to the same gate line 442, and the first driving element 431, the second driving element 432, the third driving element 433 and the fourth driving element 434 are electrically connected to different data lines 441 respectively.

[0144] It should be noted that, see Fig.16 and Fig.17 , the four data lines 441 connected to the first driving element 431, the second driving element 432, the third driving element 433 and the fourth driving element 434 can be connected to the same data bus 4410 through the multiplexing unit MUX to simplify the circuit. In addition, the multiplexing unit MUX is connected to the driving chip, and the opening or closing of the multiplexing unit MUX is directly controlled by the driving chip. Among them, the multiplexing unit MUX can include, for example, a third transistor T3, and the control electrode of the third transistor T3 is connected to the driving chip.

[0145] At this time, the first driving element 431 , the second driving element 432 , the third driving element 433 and the fourth driving element 434 may drive one light emitting device 10 , two light emitting devices 10 or four light emitting devices 10 to emit light under the control of the signal received at the data line 441 .

[0146] When only one light emitting device 10 is driven to emit light, the first transistor T1 and the second transistor T2 in any two adjacent driving elements 43 except the first driving element 431 and the fourth driving element 434 can be controlled to be turned on, and the first transistor T1 in the other two driving elements 43 can be turned off. For example, the first transistor T1 and the second transistor T2 in the first driving element 431 and the second driving element 432 are controlled to be turned on, and the first transistor T1 in the third driving element 433 and the fourth driving element 434 is controlled to be turned off. In this way, only the first light emitting device 11 emits light.

[0147] When driving two light emitting devices 10 to emit light, the first transistor T1 and the second transistor T2 in two driving elements 43 at any interval can be controlled to be turned on, and the first transistor T1 in the other two driving elements 43 can be turned off. For example, the first transistor T1 and the second transistor T2 in the first driving element 431 and the third driving element 433 are controlled to be turned on, and the first transistor T1 in the second driving element 432 and the fourth driving element 434 is controlled to be turned off. In this way, the first light emitting device 11 and the second light emitting device 12 emit light.

[0148] When the four light emitting devices 10 are driven to emit light, the first transistor T1 and the second transistor T2 in the first driving element 431 and the fourth driving element 434 can be controlled to be turned on, and the first transistor T1 in the second driving element 432 and the third driving element 433 can be controlled to be turned off. In this way, the first light emitting device 11, the second light emitting device 12, the third light emitting device 13 and the fourth light emitting device 14 emit light at the same time.

[0149] It should be understood that the voltage difference between the voltage transmitted by the first voltage signal line 4431 and the voltage transmitted by the second voltage signal line 4432 is the first difference, the voltage difference between the voltage transmitted by the second voltage signal line 4432 and the voltage transmitted by the third voltage signal line 4433 is the second difference, and the voltage transmitted by the third voltage signal line 4433 and the voltage transmitted by the fourth voltage signal line 4434 is the third difference. The first difference, the second difference and the third difference may be different from each other. In this way, when driving one light-emitting device 10 or two light-emitting devices 10 to emit light, the light-emitting devices 10 that are turned on are different, and the corresponding light-emitting brightness is different, so that more grayscale control can be achieved, and the first transistor T1 and the second transistor T2 can only be switched between fully turned on or fully turned off, without the need for compensation design of the driving transistor (first transistor T).

[0150] In the case where the light emitting substrate 100 includes the first circuit layer 40, see Figure 7 The light emitting substrate 100 may further include a first insulating layer 410 and a first reflective layer 420 .

[0151] like Figure 7 As shown, the first insulating layer 410 is disposed on a side of the light emitting device 10 away from the substrate 20 to provide insulation protection for the light emitting device 10. The first reflective layer 420 is disposed on a side of the first insulating layer 410 away from the substrate 20, so that light emitted from the light emitting device 10 toward the first reflective layer 420 is reflected and emitted from the second surface 20B of the substrate 20, thereby increasing light extraction efficiency.

[0152] The transmittance of the first insulating layer 410 is greater than or equal to 80%. For example, the material of the first insulating layer 410 may include a transparent resin.

[0153] The reflectivity of the first reflective layer 420 is greater than or equal to 85%. For example, the material of the first reflective layer 420 may include metal, for example, at least one of aluminum, silver, copper and platinum. For example, the material of the first reflective layer 420 may also include white ink and / or silicone white glue.

[0154] In other embodiments, see Figure 8 , Fig. 9 and Fig.10The light-emitting substrate 100 further includes a second circuit layer 50 and a third circuit layer 60 . The second circuit layer 50 is disposed on the first surface 20A of the substrate 20 , and the third circuit layer 60 is disposed on a side of the light-emitting device 10 away from the substrate 20 .

[0155] For example, Figure 8 , Fig. 9 and Fig.10 As shown, the second circuit layer 50 includes a first pad 41, which is disposed in the first groove 21. The third circuit layer 60 includes a second pad 42, which is disposed on a side of the light emitting device 10 away from the substrate 20. The light emitting device 10 is located in the first groove 21 and is connected to the first pad 41 and the second pad 42 to receive a light emitting signal. Figure 8 , Fig. 9 and Fig.10 In the embodiment, the anode and the cathode of the light emitting device 10 are respectively located at opposite sides of the light emitting device 10 .

[0156] It should be noted that the second circuit layer 50 and the third circuit layer 60 may be a single-layer structure or a multi-layer structure, which is not specifically limited in the embodiment of the present disclosure.

[0157] In addition, the second circuit layer 50 may further include a driving element 43 and a signal line 44. The structures of the driving element 43 and the signal line 44, and the connection relationship between the driving element 43 and the signal line 44 may be specifically referred to above, and will not be elaborated in detail in the embodiments of the present disclosure.

[0158] It should be understood that the third wiring layer 60 may include a whole metal conductive layer, and a portion of the metal conductive layer located on a side of the light emitting device 10 away from the substrate 20 forms the second pad 42 .

[0159] On this basis, in addition to providing voltage to the light emitting device 10, the metal conductive layer can also play a reflective role, so that the light emitted from the light emitting device 10 to the metal conductive layer is reflected and emitted from the second surface 20B of the substrate 20, thereby increasing the light extraction efficiency. Exemplarily, the reflectivity of the metal conductive layer is greater than or equal to 85%. For example, the material of the metal conductive layer may include at least one of aluminum, silver, copper and platinum.

[0160] It should be understood that in order to improve the light extraction efficiency of the light emitting substrate 100 , the material of the first pad 41 includes indium zinc oxide and / or indium tin oxide.

[0161] In the case where the light emitting substrate 100 includes the second circuit layer 50 and the third circuit layer 60, refer to Figure 8 , Fig. 9 and Fig.10The light-emitting substrate 100 may further include a first insulating layer 410, which is disposed between the second circuit layer 50 and the third circuit layer 60 to insulate the second circuit layer 50 from the third circuit layer 60. It should be noted that the material of the first insulating layer 410 may refer to the above, and the embodiment of the present disclosure will not be described in detail herein.

[0162] In some other embodiments, see Fig.13 and Fig.14 The light emitting substrate 100 further includes a fourth circuit layer 70 , and the fourth circuit layer 70 is disposed on the first surface 20A of the substrate 20 .

[0163] For example, Fig.13 and Fig.14 As shown, the fourth circuit layer 70 includes a first pad 41 and a second pad 42. The first pad 41 and the second pad 42 are disposed on opposite sides of the first groove 21. The light emitting device 10 is connected to the first pad 41 and the second pad 42 outside the first groove 21 to receive a light emitting signal.

[0164] The orthographic projection of the light emitting area S of the light emitting device 10 on the second surface 20B of the substrate 20 is located within the range of the orthographic projection of the first groove 21 on the second surface 20B of the substrate 20 .

[0165] It should be noted that the fourth circuit layer 70 may be a single-layer structure or a multi-layer structure, which is not specifically limited in the embodiment of the present disclosure.

[0166] On this basis, see Fig.13 The light-emitting substrate 100 may further include a second reflective layer 430, which is disposed on a side of the light-emitting device 10 away from the substrate 20 and at least covers the light-emitting device 10, so that the light emitted from the light-emitting device 10 toward the second reflective layer 430 is reflected and emitted from the second surface 20B of the substrate 20, thereby increasing the light extraction efficiency. For example, the second reflective layer 430 covers the entire light-emitting substrate 100, and the structure is simple.

[0167] In addition, the second reflective layer 430 is a continuous whole layer structure, and the surface of the second reflective layer 430 away from the light emitting device 10 is substantially parallel to the second surface 20B, which can provide good protection for the light emitting device 10 and has a simple preparation process.

[0168] The reflectivity of the second reflective layer 430 is greater than or equal to 90%. For example, the material of the second reflective layer 430 may include metal, for example, at least one of aluminum, silver, copper and platinum. For example, the material of the second reflective layer 430 may include at least one of white ink, silicone white glue and white glaze.

[0169] It should be noted that, see Figure 7 to Figure 12 When the light-emitting substrate 100 includes a first circuit layer 40 , or when the light-emitting substrate 100 includes a second circuit layer 50 and a third circuit layer 60 , the light-emitting substrate 100 may also include a second reflective layer 430 , and the second reflective layer 430 is disposed on a side of the light-emitting device 10 away from the substrate 20 .

[0170] In some embodiments, Figure 7 and Figure 8 As shown, the first insulating layer 410 may be a film layer with uniform thickness. The first insulating layer 410 extends into the first groove 21 but does not fill up the first groove 21 . The first insulating layer 410 only plays a role of packaging insulation protection.

[0171] It should be noted that, when the light emitting substrate 100 includes the first circuit layer 40 , the first insulating layer 410 fills the space between the light emitting device 10 and the first circuit layer 40 .

[0172] At this time, if Figure 7 and Figure 8 As shown, the metal conductive layer or the first reflective layer 420 included in the third circuit layer 60 extends into the first groove 21, surrounding the circumference of the light-emitting device 10. In this way, the metal conductive layer or the first reflective layer 420 can also reflect most of the light emitted from the light-emitting device 10 in the circumferential direction to the second surface 20B of the substrate 20, thereby improving the light extraction efficiency of the light-emitting substrate 100.

[0173] In other embodiments, see Fig. 9 and Fig.10 The first insulating layer 410 fills the first groove 21 , and the first insulating layer 410 can play a role in both packaging insulation protection and planarization.

[0174] On this basis, if Fig.11 and Fig.12 As shown, the light emitting substrate 100 further includes a reflective structure 80, which is disposed on at least one side of the circumference of the light emitting device 10. For example, in the row direction X, the reflective structure 80 may be disposed on two opposite sides of the light emitting device 10.

[0175] The reflective structure 80 is configured to reflect the circumferential light emitted by the light emitting device 10 so that the circumferential light emitted by the light emitting device 10 is emitted toward the second surface 20B of the substrate 20 , thereby improving the light extraction efficiency of the light emitting substrate 100 .

[0176] In some embodiments, Fig.11 and Fig.18As shown, the reflective structure 80 includes a second groove 81 and a plurality of reflective balls 82. The second groove 81 is disposed on the first surface 20A of the substrate 20. The reflective balls 82 are disposed in the second groove 81, and here, the plurality of reflective balls 82 can be stacked to fill the second groove 81 to increase the reflectivity.

[0177] The cross section of the second groove 81 is roughly an isosceles triangle, and the cross section is roughly perpendicular to the boundary between the second groove 81 and the first groove 21. This shape is convenient for direct formation by etching process, and under the condition of meeting the reflectivity requirements, the reflective structure 80 requires less space and is convenient for setting. In addition, the vertex angle of the isosceles triangle is 45° to 55°, for example, the vertex angle of the isosceles triangle is any one of 45°, 46°, 48°, 50°, 51°, 53° and 55°, so that the light from the side of the light-emitting device 10 is changed to be emitted obliquely downward, forming a good reflection effect.

[0178] The maximum depth of the second groove 81 in the first direction (i.e., the thickness direction Z mentioned above) is greater than or equal to the thickness of the light-emitting device 10 in the first direction. The first direction is substantially perpendicular to the second surface 20B. Exemplarily, the maximum depth of the second groove 81 in the first direction may be the same as the maximum depth of the first groove 21 in the first direction. In this case, the lateral light emitted by the light-emitting device 10 is reflected by the reflective structure 80 (reflective ball 82), which is beneficial to improving the light extraction efficiency of the light-emitting substrate 100.

[0179] The material of the reflective ball 82 includes a photonic crystal. Exemplarily, the reflective ball 82 includes a silicon nanosphere, the dielectric constant of the silicon nanosphere is 12.5, and the radius of the silicon nanosphere is 45nm to 55nm. For example, the radius of the silicon nanosphere is any one of 45nm, 46nm, 47nm, 49nm and 50nm.

[0180] It should be noted that the radii of all the reflective balls 82 may be the same, or may be partially the same and partially different, and the present disclosure does not make any specific limitation on this.

[0181] When the reflective ball 82 is a silicon nanosphere with a radius of 50 nm, the maximum depth of the second groove 81 in the first direction and the maximum depth of the first groove 21 in the first direction are both 150 μm to 200 μm, the three sides of the isosceles triangle are 200 μm to 220 μm, 200 μm to 220 μm and 175 μm to 195 μm, respectively, and the vertex angle of the isosceles triangle is 50°, an optical simulation of the reflective structure 80 is performed using electromagnetic simulation software, and the simulation results are shown in FIG. Fig. 20 .like Fig. 20As shown, the reflective structure 80 has a photon bandgap between 400nm and 455nm, that is, it has a blocking effect on photons with a wavelength of 400nm to 455nm. The reflectivity of the reflective structure 80 for light with a wavelength of 400nm to 455nm is greater than or equal to 99%.

[0182] Based on this, the light-emitting device 10 can choose to emit blue light, and the wavelength of the blue light is between 400nm and 460nm. In this way, the direction of most of the lateral light emitted by the light-emitting device 10 can be reflected from horizontal emission to oblique downward emission, so that the lateral light emitted by the light-emitting device 10 can also be emitted from the second surface 20B of the substrate 20, thereby effectively improving the light output efficiency of the light-emitting substrate 100.

[0183] In other embodiments, Fig.12 and Fig.19 As shown, the reflective structure 80 includes a plurality of dielectric holes 83 and a plurality of reflective columns 84. The plurality of dielectric holes 83 are arrayed on the first surface 20A of the substrate 20, and one reflective column 84 is disposed in one dielectric hole 83. The plurality of dielectric holes 83 may be arranged in a plurality of rows and columns along the row direction X and the column direction Y, each row including at least two dielectric holes 83, and each column including at least two dielectric holes 83. Moreover, in two adjacent rows of dielectric holes 83, two adjacent dielectric holes 83 in the column direction Y are arranged in the same column.

[0184] It should be noted that the row direction X and the column direction Y are the directions in which the above-mentioned light emitting devices 10 are arranged in an array. In addition, the dielectric hole 83 may be a blind hole that does not penetrate the substrate 20 , or a through hole that penetrates the substrate 20 .

[0185] The angle between the central axis of the above-mentioned medium hole 83 and the first direction (i.e., the thickness direction Z) is 20° to 35°. For example, the angle between the central axis of the medium hole 83 and the first direction (i.e., the thickness direction Z) is any one of 20°, 21°, 24°, 25°, 26°, 28°, 30°, 32°, 34° and 35°, so that the lateral light of the light-emitting device 10 is changed to be emitted obliquely downward, forming a good reflection effect.

[0186] The maximum depth of the dielectric hole 83 in the first direction is greater than or equal to the thickness of the light emitting device 10 in the first direction. Exemplarily, the dielectric hole 83 is a through hole that penetrates the substrate 20. In this case, the light emitted from the light emitting device 10 in the lateral direction is reflected by the reflective structure 80 (reflective column 84), which is beneficial to improving the light extraction efficiency of the light emitting substrate 100.

[0187] The radius of the dielectric hole 83 is greater than the radius of the reflective column 84, so that the reflective column 84 is placed in the dielectric hole 83. Exemplarily, the radius of the dielectric hole 83 is 45nm to 55nm. For example, the radius of the dielectric hole 83 is any one of 45nm, 46nm, 47nm, 48nm, 49nm, 50nm, 51nm, 52nm, 53nm, 54nm and 55nm.

[0188] The material of the reflective column 84 includes a photonic crystal. Exemplarily, the reflective column 84 includes a silicon dielectric column, the dielectric constant of the silicon dielectric column is 12.5, and the radius of the silicon dielectric column is 20nm to 40nm. For example, the radius of the silicon dielectric column is any one of 20nm, 22nm, 24nm, 25nm, 27nm, 28nm, 30nm, 31nm, 33nm, 35nm, 38nm and 40nm.

[0189] In a feasible embodiment, all the reflective columns 84 have the same radius. In another feasible embodiment, the plurality of reflective columns 84 include a plurality of first reflective columns 841 and a plurality of second reflective columns 842, the plurality of first reflective columns 841 have the same radius, the plurality of second reflective columns 842 have the same radius, and the radius of the first reflective column 841 is greater than the radius of the second reflective column 842, for example, the radius of the first reflective column 841 is 30 nm, and the radius of the second reflective column 842 is 25 nm. On this basis, the first reflective columns 841 are arranged in multiple rows, the second reflective columns 842 are arranged in multiple rows, and the multiple rows of first reflective columns 841 and the multiple rows of second reflective columns 842 are alternately arranged in the column direction Y.

[0190] When the reflective column 84 is a silicon dielectric column with a radius of 30 nm and the angle between the central axis of the dielectric hole 83 and the first direction is 30°, the reflective structure 80 is optically simulated using electromagnetic simulation software. The simulation results are shown in FIG. Fig.21 .like Fig.21 As shown, the reflective structure 80 has a photon bandgap between 400nm and 455nm, that is, it has a blocking effect on photons with a wavelength of 400nm to 450nm. The reflectivity of the reflective structure 80 for light with a wavelength of 400nm to 455nm is greater than or equal to 99%.

[0191] Based on this, the light-emitting device 10 can choose to emit blue light, and the wavelength of the blue light is between 400nm and 460nm. In this way, the direction of most of the lateral light emitted by the light-emitting device 10 can be reflected from horizontal emission to oblique downward emission, so that the lateral light emitted by the light-emitting device 10 can also be emitted from the second surface 20B of the substrate 20, thereby effectively improving the light output efficiency of the light-emitting substrate 100.

[0192] In some embodiments, see Fig.13 and Fig.14 The light-emitting substrate 100 further includes a dimming structure 90 , and the dimming structure 90 is disposed on the second surface 20B of the substrate 20 .

[0193] The dimming structure 90 is configured to adjust the light output of the first area M1 and the second area M2 to balance the light output of the first area M1 and the second area M2, reduce the difference in the light output of the first area M1 and the second area M2, and thus achieve the purpose of improving the brightness uniformity of the light-emitting substrate 100. The first area M1 is the area where the first groove 21 is located in the substrate 20, and the second area M2 is the area of ​​the substrate 20 except the first groove 21.

[0194] In some embodiments, Fig.13 and Fig. 22 As shown, the dimming structure 90 includes a first grating 91, and the first grating 91 is disposed on the second surface 20B of the substrate 20. The duty ratio of the first grating 91 in the first region M1 is smaller than the duty ratio of the first grating 91 in the second region M2. In this way, the light emitting area of ​​the second region M2 is larger than the light emitting area of ​​the first region M1, thereby reducing the difference in the light emitting amount between the first region M1 and the second region M2, thereby achieving the purpose of improving the brightness uniformity of the light emitting substrate 100.

[0195] It should be noted that the first grating 91 includes a plurality of slits 910 arranged at intervals, and the duty cycle refers to the ratio of the area of ​​the slits 910 to the area of ​​the first grating 91 .

[0196] The refractive index of the first grating 91 is greater than the refractive index of the substrate 20. Exemplarily, the material of the first grating 91 includes a glue material with a refractive index greater than 1.85. For example, the material of the first grating 91 includes at least one of embossing glue, epoxy resin glue, silicon nitride and silicon oxide.

[0197] For some examples, see Fig.13 and Fig. 22 In the first region M1 , the widths of the slits 910 of the first grating 91 may be substantially equal, for example, to facilitate preparation.

[0198] For some examples, see Fig. 22 , the two adjacent first grooves 21 in the second direction are symmetrical with respect to the first axis L1, and the second direction is substantially perpendicular to the extension direction of the slit 910 of the first grating 91. In the second region M2, the width of the slit 910 of the first grating 91 gradually increases from the first groove 21 to the first axis L1. In this case, the difference in the light output amount of the second region M2 in the second direction is reduced, and the brightness uniformity of the second region M2 is improved, thereby further improving the brightness uniformity of the light-emitting substrate 100.

[0199] It should be noted that the extending direction of the slits 910 of the first grating 91 is, for example, substantially parallel to the column direction Y. At this time, the second direction may be, for example, the row direction X.

[0200] It should be understood that the first grating 91 may include any one of a rectangular grating, a tilted grating, a blazed grating, and a two-dimensional grating.

[0201] Fig.23 FIG. 4 is a structural diagram of a rectangular grating according to some embodiments. Fig.23 As shown, the rectangular grating includes a plurality of strip-shaped protrusions arranged at intervals, the cross-section of the protrusions is roughly quadrilateral, and the protrusions are adjacent to the substrate 20 (see Fig.13 ) is roughly vertical. The first grating 91 is a rectangular grating. When the light beam enters the coupling-in region, it will be divided into diffraction orders of different angles. By adjusting the period, depth and duty cycle of the rectangular grating, the diffraction light beam in a certain direction can have the highest diffraction efficiency, which can not only realize the directional transmission of the light beam, but also improve the imaging quality.

[0202] Fig.24 FIG. 4 is a structural diagram of a tilted grating according to some embodiments. Fig.24 As shown, the inclined grating includes a plurality of strip-shaped protrusions arranged at intervals, the cross section of the protrusions is roughly quadrilateral, and the protrusions are adjacent to the substrate 20 (see Fig.13 ) is not vertical. The first grating 91 is a tilted grating, and the wavelength bandwidth and angle bandwidth of the incident light can be modulated by the tilt angle, thereby improving the chromatic aberration caused by the optical path difference when light beams of different wavelengths are transmitted.

[0203] Fig.25 FIG. 4 is a structural diagram of a blazed grating according to some embodiments. Fig.24 As shown, the blazed grating includes a plurality of strip-shaped protrusions arranged at intervals, the cross section of the protrusion is roughly triangular, and the triangle can be roughly a right-angled triangle, and one right-angle side of the protrusion is adjacent to the substrate 20 (see Fig.13 ) connection. Wherein, the first grating 91 is a blazed grating, and the position of the central maximum value of the single-slit diffraction can be transferred from the zero-order spectrum without dispersion to other spectral levels with dispersion.

[0204] Fig.26 FIG. 4 is a structural diagram of a two-dimensional grating according to some embodiments. Fig.24 As shown, the blazed grating includes a plurality of block-shaped protrusions arranged in an array. Among them, the first grating 91 adopts a two-dimensional grating, which can realize the coupling out of the light beam and the expansion in multiple directions, with higher diffraction efficiency and wider light output surface.

[0205] Based on the above, the first grating 91 can be selected from any one of a rectangular grating, a tilted grating, a blazed grating and a two-dimensional grating according to actual needs, and the embodiment of the present disclosure does not make any specific limitation on this.

[0206] In other embodiments, Fig.14 As shown, the dimming structure 90 includes a light guide plate 92 and a plurality of mesh dots 93. The light guide plate 92 is disposed on the second surface 20B of the substrate 20, and a plurality of third grooves 921 are disposed on a side of the light guide plate 92 away from the substrate 20. The mesh dots 93 are located in the third grooves 921.

[0207] The material of the light guide plate 92 includes a transparent resin. For example, the material of the light guide plate 92 includes polymethyl methacrylate and / or polyoxymethylene.

[0208] The material of the mesh dots 93 includes at least one of a transparent resin, a white resin, and a resin mixed with other optical particles. For example, the mesh dots 93 include polymethyl methacrylate fused with titanium dioxide particles.

[0209] It should be noted that there is a refractive index difference between the material of the light guide plate 92 and the effective refractive material (such as titanium dioxide particles) in the material of the dots 93 , which can destroy the total reflection of light in the light guide plate 92 , thereby causing the light to be emitted from the surface of the light guide plate 92 close to the dots 93 .

[0210] When light hits the mesh dots 93 , the mesh dots 93 scatter the incident light, and the light is reflected in all directions. The scattered light is emitted from the side of the dimming structure 90 away from the substrate 20 , thereby improving the brightness uniformity of the first area M1 and the second area M2 , thereby improving the brightness uniformity of the light-emitting substrate 100 .

[0211] It should be noted that the density of the dots 93 refers to the ratio of the area of ​​the dots 93 to the area of ​​the surface of the light guide plate 92 close to the substrate 20 .

[0212] A dot 93 may be disposed in a third groove 921 to control the density of the dot 93 , thereby adjusting the light output of the first area M1 and the second area M2 to reduce the difference in the light output of the first area M1 and the second area M2 .

[0213] For some examples, see Fig.14 , the density of the dots 93 in the first area M1 is less than the density of the dots 93 in the second area M2. In this way, due to the difference in refractive index between the light guide plate 92 and the dots 93, light can be emitted from the surface of the light guide plate 92 close to the dots 93. Therefore, the density of the dots 93 in the first area M1 is less than the density of the dots 93 in the second area M2.

[0214] That is, the light emitting area of ​​the first region M1 is smaller than that of the second region M2 , which can reduce the difference in light emitting amount between the first region M1 and the second region M2 , thereby achieving the purpose of improving the brightness uniformity of the light emitting substrate 100 .

[0215] For some examples, see Fig.14 , two adjacent first grooves 21 are symmetrical with respect to the second axis L2, and in the second region M2, the density of the mesh dots 93 gradually increases from the first grooves 21 to the second axis L2. In this way, due to the difference in refractive index between the light guide plate 92 and the mesh dots 93, light can be emitted from the surface of the light guide plate 92 close to the mesh dots 93. Therefore, in the second region M2, the density of the mesh dots 93 gradually increases from the first grooves 21 to the second axis L2.

[0216] That is, in the second region M2 , the light emitting area of ​​the region farther from the first groove 21 is larger than the light emitting area of ​​the region closer to the first groove 21 , which can improve the brightness uniformity of the second region M2 , thereby further improving the brightness uniformity of the light-emitting substrate 100 .

[0217] In some embodiments, see Figure 7 and Figure 8 The light emitting substrate 100 further includes a second grating 440 , which is disposed in the first groove 21 and between the color conversion layer 320 and the scattering layer 310 .

[0218] At this time, the color conversion layer 320 is located in the first groove 21, and the scattering layer 310 can be located in the first groove 21 or on the side of the second surface 20B of the second substrate 20. The following takes the case where the color conversion layer 320 is located in the first groove 21 as an example to schematically illustrate some embodiments of the present disclosure, but the embodiments of the present disclosure are not limited thereto.

[0219] The second grating 440 is configured to transmit light whose polarization direction is substantially parallel to the third direction, and the third direction is substantially parallel to the second surface 20B.

[0220] On this basis, the second grating 440 and the substrate 20 located in the first groove 21 jointly occupy part of the size of the display device 1000 in the thickness direction Z, that is, the second grating 440 located in the first groove 21 does not need to additionally occupy the size of the display device 1000 in the thickness direction Z. At the same time, the second grating 440 can play the role of a polarizer, so that a layer of polarizer is omitted in the display panel 200, thereby reducing the thickness of the display panel 200 and the thickness of the display device 1000, making the display device 1000 thinner and lighter.

[0221] For example, Figure 3As shown, the display panel 200 includes an array substrate 210, a cell substrate 220, a liquid crystal layer 230, and a first polarizer 240. The liquid crystal layer 230 is disposed between the array substrate 210 and the cell substrate 220, and the first polarizer 240 is disposed on a side of the liquid crystal layer 230 away from the light-emitting substrate 100. For example, the first polarizer 240 is disposed between the liquid crystal layer 230 and the cell substrate 220.

[0222] The transmission axis of the first polarizer 240 is substantially perpendicular or substantially parallel to the polarization direction of the light selectively transmitted by the second grating 440. That is, the transmission axis of the first polarizer 240 is substantially perpendicular or substantially parallel to the third direction.

[0223] It should be noted that the transmission axis of the first polarizer 240 is substantially perpendicular or substantially parallel to the third direction, and can be specifically designed according to different display mode types, which is not specifically limited in the embodiments of the present disclosure.

[0224] In some embodiments, see Fig.10 The side wall of at least one side of the first groove 21 has a step structure 211 (see Fig.40 ) to avoid the risk of film layer or wiring breakage due to the slope of the sidewall of the first groove 21 being too long.

[0225] For example, Fig.10 As shown, the light-emitting substrate 100 includes a second circuit layer 50 and a third circuit layer 60, and the first groove 21 includes four side walls connected to each other. A step is formed on a side wall of the first groove 21 in the row direction X, and there is a slope on both the upper and lower sides of the step. The signal line 44 can be connected to the first pad 41 in the first groove 21 through the two slopes in sequence, thereby reducing the risk of the signal line 44 breaking.

[0226] In some embodiments, see Fig. 27 and Fig.28 The orthographic projections of the light-emitting areas S of at least two light-emitting devices 10 on the second surface 20B of the substrate 20 are located within the range of the orthographic projection of the same first groove 21 on the second surface 20B of the substrate 20 to reduce the process difficulty.

[0227] For example, see Figure 5 , Figure 6 and Fig. 27 , a plurality of light emitting devices 10 are arranged in an array, and the light emitting areas S of at least two light emitting devices 10 located in the same row and / or the same column (see Figure 7 )'s orthographic projection on the second surface 20B of the substrate 20 is located within the range of the orthographic projection of the same first groove 21 on the second surface 20B of the substrate 20 to reduce the process difficulty.

[0228] For example, Fig. 27 As shown, the light-emitting areas S of the eight light-emitting devices 10 located in the same row (see Figure 7 ) is an orthographic projection on the second surface 20B of the substrate 20 . The eight light-emitting devices 10 may belong to the same light-emitting unit 110 .

[0229] In addition, if Fig. 27 As shown, the light-emitting areas S (see Figure 7 ) on the second surface 20B of the substrate 20 is located within the range of the orthographic projection of the same first groove 21 on the second surface 20B of the substrate 20. In this way, the first grooves 21 are prepared according to the division of the light-emitting units 110, which can simplify the preparation process of the first grooves 21, facilitate circuit routing design, and help improve the brightness uniformity of the light-emitting substrate 100.

[0230] Of course, if Fig.28 As shown, the light-emitting areas S (see Figure 7 ) on the second surface 20B of the substrate 20, can also be respectively located within the range of the orthographic projections of the two first grooves 21 on the second surface 20B of the substrate 20. For example, a plurality of light-emitting devices 10 belonging to the same light-emitting unit 110 are arranged in a plurality of rows and columns, and in the same light-emitting unit 110, the light-emitting areas S of the light-emitting devices 10 belonging to the same row are located within the range of the orthographic projection of a first groove 21 on the second surface 20B of the substrate 20, so as to simplify the routing design of the signal line 44.

[0231] In some embodiments, see Fig. 9 and Fig.14 The above-mentioned light-emitting substrate 100 also includes a third reflective layer 460, which covers the first surface 20A of the substrate 20 and exposes at least a portion of the first groove 21, so that the light emitted by the light-emitting device 10 toward the third reflective layer 460 is reflected and emitted from the second surface 20B of the substrate 20, thereby increasing the light extraction efficiency.

[0232] For example, Fig. 9 As shown, the third reflective layer 460 covers the first surface 20A of the substrate 20 , and partially extends to the upper side of the first groove 21 , exposing a portion of the first groove 21 .

[0233] For example, Fig.14 As shown, the third reflective layer 460 covers the first surface 20A of the substrate 20 and completely exposes the first groove 21 .

[0234] The reflectivity of the third reflective layer 460 is greater than or equal to 90%. Exemplarily, the material of the third reflective layer 460 includes white ink and / or silicon-based white glue.

[0235] At this time, in the case where the light emitting substrate 100 includes the reflective balls 82 or the reflective columns 84 , the third reflective layer 460 may play a role in covering and fixing the reflective balls 82 or the reflective columns 84 .

[0236] On this basis, if Fig. 9 As shown, the light emitting substrate 100 further includes a plurality of reflective prisms 470 , which are disposed between the third reflective layer 460 and the substrate 20 to increase the reflectivity of the surface of the third reflective layer 460 close to the substrate 20 .

[0237] It should be noted that the plurality of reflective prisms 470 may be arranged in an array between the third reflective layer 460 and the substrate 20 , and this embodiment of the present disclosure does not specifically limit this.

[0238] Some embodiments of the present disclosure also provide a method for preparing a light-emitting substrate 100, which is used to prepare the light-emitting substrate 100 of any of the above embodiments. Fig.29 As shown, the preparation method includes S100 to S200.

[0239] S100 : forming a first groove 21 on a substrate 20 .

[0240] In the above steps, if Fig.39 , Fig.40 and Fig.41 As shown, the substrate 20 has a first surface 20A and a second surface 20B which are opposite to each other. The first surface 20A of the substrate 20 is provided with a first groove 21 .

[0241] For some examples, see Fig.39 and Fig.40 The first groove 21 can be formed by etching the substrate 20 using a mask plate. In a feasible embodiment, a mask plate can be provided separately, and after etching the substrate 20 to form the first groove 21, the mask plate is removed. The material of the mask plate may include amorphous silicon. In another feasible embodiment, refer to Fig.41 The mask plate may also be the third reflective layer 460 mentioned above, that is, before S100, see Fig.30 , the preparation method also includes S90.

[0242] S90 : forming a third reflective layer 460 on the substrate 20 .

[0243] In the above steps, if Fig.41 As shown, the third reflective layer 460 covers the first surface 20A of the substrate 20 and exposes the first groove 21. The third reflective layer 460 can be formed by at least one of a coating process, a photolithography process, a deposition process, and a sputtering process, which is not specifically limited in the embodiment of the present disclosure.

[0244] It should be noted that before forming the third reflective layer 460 , a plurality of reflective prisms 470 may be formed by means of an embossing technique, which is not specifically limited in the embodiment of the present disclosure.

[0245] For other examples, see Fig.31 , S100 includes S110~S120.

[0246] S110: etching the substrate 20 to form a first initial groove 21 ′.

[0247] In the above steps, if Fig.40 As shown, a mask plate may be used to perform an etching process on the substrate 20 to form the first initial groove 21'. The material of the mask plate may include amorphous silicon.

[0248] S120 : etching the sidewall of at least one side of the first preliminary groove 21 ′ so that a step structure 211 is formed on the sidewall of at least one side of the first preliminary groove 21 ′.

[0249] In the above steps, if Fig.40 As shown, another mask plate may be used to perform another etching process on the substrate 20 to form a first groove 21 having a step structure 211 on at least one side of the sidewall. The material of the mask plate may include amorphous silicon.

[0250] S200 : forming a scattering layer 310 , a color conversion layer 320 and a light emitting device 10 .

[0251] In the above steps, if Figure 39 to Figure 45 As shown, the color conversion layer 320 is disposed on the side of the light emitting device 10 facing the second surface 20B. The light emitting device 10 includes a light emitting area S, and the orthographic projection of the light emitting area S of the light emitting device 10 on the substrate 20 is located within the range of the orthographic projection of the color conversion layer 320 on the substrate 20. The scattering layer 310 is disposed on the side of the color conversion layer 320 away from the light emitting device 10. And the orthographic projection of the light emitting area S of the light emitting device 10 on the substrate 20 is located within the range of the orthographic projection of the scattering layer 310 on the substrate 20. Among them, at least one of the light emitting device 10, the color conversion layer 320 and the scattering layer 310 is located in the first groove 21.

[0252] The beneficial effects of the method for preparing the light-emitting substrate 100 provided in some embodiments of the present disclosure are the same as the beneficial effects of the light-emitting substrate 100 provided in the above embodiments, and the embodiments of the present disclosure will not be described in detail here.

[0253] In some embodiments, see Fig.32 , the above S200 includes S211 to S214.

[0254] S211 : forming a scattering layer 310 and a color conversion layer 320 in sequence in the first groove 21 .

[0255] In the above steps, if Fig.41 As shown, the scattering layer 310 and the color conversion layer 320 may be sequentially formed in the first groove 21 by using an inkjet printing process.

[0256] S212 : forming a first encapsulation layer 450 on a side of the color conversion layer 320 away from the substrate 20 .

[0257] In the above steps, if Fig.41 As shown, the first encapsulation layer 450 is disposed on the side of the color conversion layer away from the substrate 20 to protect the color conversion layer 320, thereby reducing the risk of failure of the color conversion layer 320 caused by water and oxygen corrosion. The first encapsulation layer 450 can be formed by a deposition process and / or an inkjet printing process, which is not specifically limited in the embodiments of the present disclosure.

[0258] S213 : forming a first circuit layer 40 on a side of the first packaging layer 450 away from the substrate 20 .

[0259] In the above steps, if Fig.39 As shown, the first circuit layer 40 includes a first pad 41 and a second pad 42. The first pad 41 and the second pad 42 are disposed in the first groove 21.

[0260] It should be noted that the first circuit layer 40 may further include a signal line 44. The first pad 41, the second pad 42 and the signal line 44 included in the first circuit layer 40 may be formed by electroplating and / or magnetron sputtering, which is not specifically limited in the present embodiment.

[0261] S214 : forming a light emitting device 10 in the first groove 21 .

[0262] In the above steps, if Fig.39 As shown, the light emitting device 10 is connected to the first pad 41 and the second pad 42. Exemplarily, the light emitting device 10 and the first pad 41 and the second pad 42 may be connected by a welding process.

[0263] In other embodiments, see Fig.33 , S200 includes S221~S225.

[0264] S221 : forming a scattering layer 310 and a color conversion layer 320 in sequence in the first groove 21 .

[0265] In the above steps, if Fig.41 As shown, the scattering layer 310 and the color conversion layer 320 may be sequentially formed in the first groove 21 by using an inkjet printing process.

[0266] S222 : forming a first encapsulation layer 450 on a side of the color conversion layer 320 away from the substrate 20 .

[0267] In the above steps, if Fig.41 As shown, the first encapsulation layer 450 is disposed on the side of the color conversion layer away from the substrate 20 to protect the color conversion layer 320, thereby reducing the risk of failure of the color conversion layer 320 caused by water and oxygen corrosion. The first encapsulation layer 450 can be formed by a deposition process and / or an inkjet printing process, which is not specifically limited in the embodiments of the present disclosure.

[0268] S223 : forming a second circuit layer 50 on a side of the first packaging layer 450 away from the substrate 20 .

[0269] In the above steps, if Fig.41 As shown, the second circuit layer 50 includes a first pad 41 . The first pad 41 is disposed in the first groove 21 .

[0270] It should be noted that the second circuit layer 50 may further include a signal line 44. The first pad 41 and the signal line 44 included in the second circuit layer 50 may be formed by an electroplating process and / or a magnetron sputtering process, which is not specifically limited in the embodiment of the present disclosure.

[0271] S224 : forming a light emitting device 10 in the first groove 21 .

[0272] In the above steps, if Fig.41 As shown, the light emitting device 10 is connected to the first pad 41. Exemplarily, the light emitting device 10 and the first pad 41 may be connected by a welding process.

[0273] S225 : forming a third circuit layer 60 on a side of the light emitting device 10 away from the substrate 20 .

[0274] In the above steps, if Fig.41 As shown, the third circuit layer 60 includes a second pad 42, and the light emitting device 10 is also connected to the second pad 42. Exemplarily, the light emitting device 10 and the second pad 42 can be connected by a welding process.

[0275] It should be noted that the third circuit layer 60 includes a conductive layer, which can be a continuous whole layer structure, and the second pad 42 can be the part of the conductive layer located directly above the light-emitting device 10. The conductive layer can be formed by an electroplating process and / or a magnetron sputtering process, and the embodiments of the present disclosure do not specifically limit this.

[0276] In some other embodiments, see Fig.34 , the above S200 also includes S231~S234.

[0277] S231 : forming a scattering layer 310 and a color conversion layer 320 in sequence in the first groove 21 .

[0278] In the above steps, if Fig.42 As shown, the scattering layer 310 and the color conversion layer 320 may be sequentially formed in the first groove 21 by using an inkjet printing process.

[0279] S232 : forming a first encapsulation layer 450 on a side of the color conversion layer 320 away from the substrate 20 .

[0280] In the above steps, if Fig.42 As shown, the first encapsulation layer 450 is disposed on the side of the color conversion layer away from the substrate 20 to protect the color conversion layer 320, thereby reducing the risk of failure of the color conversion layer 320 caused by water and oxygen corrosion. The first encapsulation layer 450 can be formed by a deposition process and / or an inkjet printing process, which is not specifically limited in the embodiments of the present disclosure.

[0281] S233 : forming a fourth circuit layer 70 on a side of the first packaging layer 450 away from the substrate 20 .

[0282] In the above steps, if Fig.42 As shown, the fourth circuit layer 70 includes a first pad 41 and a second pad 42. The first pad 41 and the second pad 42 are disposed on opposite sides of the first groove 21.

[0283] It should be noted that the fourth circuit layer 70 may also include a signal line 44. The first pad 41, the second pad 42 and the signal line 44 included in the fourth circuit layer 70 may be formed by electroplating and / or magnetron sputtering, which is not specifically limited in the present embodiment.

[0284] S234 : forming a light emitting device 10 on a side of the fourth wiring layer 70 away from the substrate 20 .

[0285] In the above steps, if Fig.42 As shown, the light emitting device 10 is connected to the first pad 41 and the second pad 42 outside the first groove 21. Exemplarily, the light emitting device 10 is connected to the first pad 41 and the second pad 42 outside the first groove 21 by a welding process.

[0286] The orthographic projection of the light emitting area S of the light emitting device 10 on the second surface 20B of the substrate 20 is located within the range of the orthographic projection of the first groove 21 on the second surface 20B of the substrate 20 .

[0287] See also Fig.32 and Fig.33 In the case where S200 includes S211 to S214 or S221 to S225, the above S200 also includes S230.

[0288] S230 : forming a first insulating layer 410 .

[0289] In the above steps, if Fig.39 As shown, when S200 includes S211 to S214, the first insulating layer 410 is disposed on a side of the light emitting device 10 away from the substrate 20. Fig.40 and Fig.41 As shown, when S200 includes S221 - S225 , the first insulating layer 410 is disposed between the second circuit layer 50 and the third circuit layer 60 .

[0290] It should be noted that the first insulating layer 410 may be formed by a deposition process and / or a coating process, which is not specifically limited in the embodiments of the present disclosure.

[0291] In the case where the first insulating layer 410 fills the first groove 21, in some examples, such as Fig.35 As shown, after S100, the preparation method may further include S310 to S320.

[0292] S310 : forming a second groove 81 .

[0293] In the above steps, if Fig.44 As shown, the second groove 81 is provided on the first surface 20A of the substrate 20 and is located on at least one side of the circumference of the first groove 21. In a feasible implementation, a mask plate can be provided separately, and the substrate 20 is etched using the mask plate as a mask to form the second groove 81, and then the mask plate is removed. The material of the mask plate can include amorphous silicon.

[0294] S320 : filling the second groove 81 with a reflective ball 82 .

[0295] In the above steps, if Fig.44 As shown, a plurality of reflective balls 82 can be stacked to fill the second groove 81 to form a tight stack.

[0296] In the case where the first insulating layer 410 fills the first groove 21, in other examples, such as Fig.36 As shown, after S100, the preparation method may further include S410 to S420.

[0297] S410: forming a plurality of dielectric holes 83.

[0298] In the above steps, if Fig.45 As shown, a plurality of dielectric holes 83 are disposed on the first surface 20A of the substrate 20 and are located on at least one side of the circumference of the first groove 21. The plurality of dielectric holes 83 can be formed by ablating the substrate 20 using femtosecond laser technology to form a plurality of inclined dielectric holes 83 arranged in an array.

[0299] S420 : Filling the reflective column 84 in the dielectric hole 83 .

[0300] In the above steps, if Fig.45 As shown, a reflective column 84 is disposed in a dielectric hole 83. In S420, a mechanical alignment process may be used to place the reflective column 84 in the dielectric hole 83.

[0301] In some embodiments, the method for preparing the light emitting substrate 100 further includes: forming a first grating 91 on the second surface 20B of the substrate 20 .

[0302] Among them, Fig.13 and Fig.42 As shown, the duty ratio of the first grating 91 in the first region M1 is smaller than the duty ratio of the first grating 91 in the second region M2. The first region M1 is the region where the first groove 21 of the substrate 20 is located, and the second region M2 is the region of the substrate 20 excluding the first groove 21.

[0303] It should be noted that the first grating 91 may be provided before S100 or after S200, and this embodiment of the present disclosure does not specifically limit this.

[0304] For some examples, see Fig.37 , forming the first grating 91 on the second surface 20B of the substrate 20 specifically includes S510 to S520.

[0305] S510 : thinning the substrate 20 and forming an initial target thin film on the second surface 20B of the substrate 20 .

[0306] In the above steps, refer to Fig.42 The initial target film may be formed by a deposition process and / or a coating process. The refractive index of the material of the initial target film is greater than the refractive index of the substrate 20.

[0307] S520 : patterning the initial target film to form a first grating 91 .

[0308] In the above steps, refer to Fig.42 , the initial target film can be patterned using photolithography and / or nanoimprinting processes to form the first grating 91.

[0309] In other embodiments, see Fig.38 The method for preparing the light-emitting substrate 100 further includes S610 to S620.

[0310] S610 : forming a light guide plate 92 on the second surface 20B of the substrate 20 .

[0311] In the above steps, if Fig.43As shown, a plurality of third grooves 921 are provided on one side of the light guide plate 92 away from the substrate 20. The light guide plate 92 can be formed by injection molding, hot pressing, 3D printing, laser dotting and other processes.

[0312] S620 : forming dots 93 in the third groove 921 .

[0313] In the above steps, if Fig.14 and Fig.43 As shown, the density of the dots 93 in the first region M1 is greater than the density of the dots 93 in the second region M2. The first region M1 is the region where the first groove 21 in the substrate 20 is located, and the second region M2 is the region of the substrate 20 excluding the first groove 21. The dots 93 may be formed by a laser dotting process, but the embodiments of the present disclosure are not limited thereto.

[0314] In some embodiments, see Fig.39 In the process of S200 , a second grating 440 is also formed. The second grating 440 is disposed in the first groove 21 and is located between the color conversion layer 320 and the scattering layer 310 .

[0315] Here, forming the second grating 440 may specifically include first forming a metal layer in the first groove 21 by a sputtering process, and the material of the metal layer may include, for example, aluminum and / or molybdenum; then, using femtosecond laser technology to perform laser ablation to generate a periodic nano-metal wire grid structure, thereby forming the second grating 440.

[0316] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0317] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be thought of by any person skilled in the art within the technical scope disclosed in the present disclosure should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A light-emitting substrate, characterized in that: include: A substrate having a first surface and a second surface arranged opposite to each other; the first surface of the substrate is provided with a first groove; A light emitting device is disposed on the first surface of the substrate; the light emitting device comprises a light emitting area; A color conversion layer, disposed on a side of the light emitting device facing the second surface; and the orthographic projection of the light emitting area of ​​the light emitting device on the substrate is located within the range of the orthographic projection of the color conversion layer on the substrate; A scattering layer is arranged on a side of the color conversion layer away from the light-emitting device; and an orthographic projection of a light-emitting area of ​​the light-emitting device on the substrate is located within the range of the orthographic projection of the scattering layer on the substrate; Wherein, at least one of the light emitting device, the color conversion layer and the scattering layer is located in the first groove.

2. The light-emitting substrate according to claim 1, characterized in that: Also includes: A first circuit layer is disposed on the first surface of the substrate; the first circuit layer includes a first pad and a second pad; the first pad, the second pad and the light emitting device are all disposed in the first groove; and the light emitting device is connected to the first pad and the second pad; or, The light-emitting substrate further comprises: A second circuit layer is disposed on the first surface of the substrate; the second circuit layer includes a first pad; the first pad and the light emitting device are both disposed in the first groove; and the light emitting device is connected to the first pad; The third circuit layer is arranged on a side of the light emitting device away from the substrate; the third circuit layer includes a second solder pad, and the light emitting device is also connected to the second solder pad.

3. The light-emitting substrate according to claim 2, characterized in that: The light-emitting substrate includes a first circuit layer, and the light-emitting substrate further includes: A first insulating layer is provided on a side of the light emitting device away from the substrate; A first reflective layer is disposed on a side of the first insulating layer away from the substrate; or The light-emitting substrate comprises a second circuit layer and a third circuit layer, and the light-emitting substrate further comprises: The first insulating layer is arranged between the second circuit layer and the third circuit layer.

4. The light-emitting substrate according to claim 3, characterized in that: The transmittance of the first insulating layer is greater than or equal to 80%, and the first insulating layer fills the first groove; The light-emitting substrate further comprises: A reflective structure, disposed on at least one side of the circumference of the light emitting device; The reflective structure is configured to reflect the light emitted in the circumferential direction of the light emitting device, so that the light emitted in the circumferential direction of the light emitting device is emitted toward the second surface of the substrate.

5. The light-emitting substrate according to claim 4, characterized in that: The reflective structure comprises: A second groove is disposed on the first surface of the substrate; A plurality of reflective balls are disposed in the second groove.

6. The light-emitting substrate according to claim 5, characterized in that: The cross section of the second groove is substantially an isosceles triangle, and the vertex angle of the isosceles triangle is 45° to 55°, and the cross section is substantially perpendicular to the boundary between the second groove and the first groove; and / or, The maximum depth of the second groove in the first direction is greater than or equal to the thickness of the light emitting device in the first direction; and the first direction is substantially perpendicular to the second surface.

7. The light-emitting substrate according to claim 5, characterized in that: The material of the reflective ball includes photonic crystal.

8. The light-emitting substrate according to claim 4, characterized in that: The reflective structure comprises: A plurality of dielectric holes are arranged in an array on the first surface of the substrate; A plurality of reflective columns, one of the reflective columns is disposed in one of the medium holes.

9. The light-emitting substrate according to claim 8, characterized in that: The included angle between the central axis of the medium hole and the first direction is 20° to 35°; the first direction is substantially perpendicular to the second surface; or, The maximum depth of the medium hole in the first direction is greater than or equal to the thickness of the light emitting device in the first direction.

10. The light emitting substrate according to claim 8, characterized in that: The material of the reflective column includes photonic crystal.

11. The light emitting substrate according to claim 1, characterized in that: Also includes: A fourth circuit layer is disposed on the first surface of the substrate; the fourth circuit layer includes a first pad and a second pad; the first pad and the second pad are disposed on opposite sides of the first groove; The orthographic projection of the light-emitting area of ​​the light-emitting device on the second surface of the substrate is located within the range of the orthographic projection of the first groove on the second surface of the substrate; and the light-emitting device is connected to the first pad and the second pad outside the first groove.

12. The light emitting substrate according to claim 11, characterized in that: Also includes: The second reflective layer is arranged on a side of the light emitting device away from the substrate and at least covers the light emitting device.

13. The light emitting substrate according to claim 1, characterized in that: Also includes: A dimming structure is disposed on the second surface of the substrate; the dimming structure is configured to adjust the light output amount of the first area and the second area; The first region is a region of the substrate where the first groove is located, and the second region is a region of the substrate excluding the first groove.

14. The light emitting substrate according to claim 13, characterized in that: The dimming structure comprises: The first grating is arranged on the second surface of the substrate; the duty ratio of the first grating in the first area is smaller than the duty ratio of the first grating in the second area.

15. The light emitting substrate according to claim 14, characterized in that: In the first region, the widths of the slits of the first grating are substantially equal; and / or, Two adjacent first grooves in the second direction are symmetrical with respect to the first axis, and the second direction is substantially perpendicular to the extension direction of the slit of the first grating; in the second region, from the first groove to the first axis, the width of the slit of the first grating gradually increases.

16. The light emitting substrate according to claim 13, characterized in that: The dimming structure comprises: A light guide plate is disposed on the second surface of the substrate; a plurality of third grooves are disposed on a side of the light guide plate away from the substrate; A plurality of dots are located in the third groove; a density of the dots in the first area is greater than a density of the dots in the second area.

17. The light emitting substrate according to claim 16, characterized in that: Two adjacent first grooves are symmetrical with respect to the second axis. In the second area, the density of the dots increases gradually from the first groove to the second axis.

18. The light emitting substrate according to claim 1, characterized in that: Also includes: The second grating is disposed in the first groove and between the color conversion layer and the scattering layer. The second grating is configured to transmit light whose polarization direction is substantially parallel to a third direction, and the third direction is substantially parallel to the second surface.

19. The light emitting substrate according to any one of claims 1 to 18, characterized in that: The color conversion layer is disposed in the first groove; the light-emitting substrate further includes: The first encapsulation layer is arranged on a side of the color conversion layer away from the substrate.

20. The light emitting substrate according to any one of claims 1 to 18, characterized in that: A side wall on at least one side of the first groove has a step structure.

21. The light emitting substrate according to any one of claims 1 to 18, characterized in that: The orthographic projections of the light-emitting areas of at least two light-emitting devices on the second surface of the substrate are located within the range of the orthographic projection of the same first groove on the second surface of the substrate.

22. The light-emitting substrate according to claim 21, characterized in that: The plurality of light emitting devices are arranged in an array, and the orthographic projections of the light emitting areas of at least two light emitting devices in the same row and / or column on the second surface of the substrate are within the range of the orthographic projection of the same first groove on the second surface of the substrate.

23. The light-emitting substrate according to claim 21, characterized in that: include: A light-emitting unit, comprising a plurality of the light-emitting devices connected in series and / or in parallel; The orthographic projections of the light-emitting areas of the plurality of light-emitting devices belonging to the same light-emitting unit on the second surface of the substrate are located within the range of the orthographic projection of the same first groove on the second surface of the substrate.

24. The light emitting substrate according to any one of claims 1 to 18, characterized in that: Also includes: The third reflective layer covers the first surface of the substrate and exposes at least a portion of the first groove.

25. A backlight module, characterized in that: include: The light-emitting substrate according to any one of claims 1 to 24; The light-emitting substrate has a light-emitting side and a non-light-emitting side opposite to each other; A diffusion sheet, arranged on the light-emitting side of the light-emitting substrate; The composite film is arranged on a side of the diffusion sheet away from the light-emitting substrate.

26. A display device, characterized in that: include: The backlight module as claimed in claim 25; The display panel is arranged on a side of the composite film in the backlight module away from the light-emitting substrate.

27. The display device according to claim 26, characterized in that: The light-emitting substrate includes a second grating; and the display panel includes: Liquid crystal layer; The first polarizer is arranged on a side of the liquid crystal layer away from the light-emitting substrate; the transmission axis of the first polarizer is substantially perpendicular or substantially parallel to the polarization direction of the light selectively transmitted by the second grating.

28. A method for preparing a light-emitting substrate, characterized in that: For preparing a light-emitting substrate according to any one of claims 1 to 24, comprising: A first groove is formed on a substrate; the substrate has a first surface and a second surface arranged opposite to each other; the first surface of the substrate is provided with the first groove; A scattering layer, a color conversion layer and a light-emitting device are formed; the color conversion layer is arranged on the side of the light-emitting device facing the second surface; the light-emitting device includes a light-emitting area, and the orthographic projection of the light-emitting area of ​​the light-emitting device on the substrate is located within the range of the orthographic projection of the color conversion layer on the substrate; the scattering layer is arranged on the side of the color conversion layer away from the light-emitting device; and the orthographic projection of the light-emitting area of ​​the light-emitting device on the substrate is located within the range of the orthographic projection of the scattering layer on the substrate; wherein at least one of the light-emitting device, the color conversion layer and the scattering layer is located in the first groove.

29. The preparation method according to claim 28, characterized in that: The forming of the scattering layer, the color conversion layer and the light emitting device comprises: forming a scattering layer and a color conversion layer in the first groove in sequence; forming a first encapsulation layer on a side of the color conversion layer away from the substrate; A first circuit layer is formed on a side of the first packaging layer away from the substrate; the first circuit layer includes a first pad and a second pad; the first pad and the second pad are arranged in the first groove; A light emitting device is formed in the first groove; the light emitting device is connected to the first pad and the second pad.

30. The preparation method according to claim 28, characterized in that: The forming of the scattering layer, the color conversion layer and the light emitting device comprises: forming a scattering layer and a color conversion layer in the first groove in sequence; forming a first encapsulation layer on a side of the color conversion layer away from the substrate; A second circuit layer is formed on a side of the first packaging layer away from the substrate; the second circuit layer includes a first pad; the first pad is disposed in the first groove; A light emitting device is formed in the first groove; the light emitting device is connected to the first pad; A third circuit layer is formed on a side of the light emitting device away from the substrate; the third circuit layer includes a second pad, and the light emitting device is also connected to the second pad.

31. The preparation method according to claim 28, characterized in that: The forming of the scattering layer, the color conversion layer and the light emitting device comprises: forming a scattering layer and a color conversion layer in the first groove in sequence; forming a first encapsulation layer on a side of the color conversion layer away from the substrate; A fourth circuit layer is formed on a side of the first packaging layer away from the substrate; the fourth circuit layer includes a first pad and a second pad; the first pad and the second pad are arranged on opposite sides of the first groove; A light-emitting device is formed on a side of the fourth circuit layer away from the substrate; the light-emitting device is connected to the first pad and the second pad outside the first groove; and the orthographic projection of the light-emitting area of ​​the light-emitting device on the second surface of the substrate is located within the range of the orthographic projection of the first groove on the second surface of the substrate.

Citation Information

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