Single-Molecule Spin Memory Based on Dual-Wavelength Photoelectric Effect and Its Preparation Method

Abstract

The present invention relates to the technical field of molecular optoelectronic devices, and provides a single-molecule spin memory based on dual-wavelength photoelectric effect and a preparation method thereof. The memory includes a magnetic metal-organic complex, a graphene nano-gap array electrode, a magnetic tunnel junction, and a heavy-metal back gate. The magnetic metal-organic complex has a chiral-induced spin selection effect and a dual-wavelength photoelectric effect; the magnetic metal-organic complex is covalently connected to the graphene nano-gap array electrode through an amide bond to form a magnetic metal-organic complex heterojunction; the magnetic tunnel junctions are symmetrically arranged on both sides of the magnetic metal-organic complex heterojunction; both the graphene nano-gap array electrode and the magnetic metal-organic complex are assembled on the top of the heavy-metal back gate. The present invention significantly improves the read and write speed of the memory and reduces the power consumption, promoting the development of high-speed, low-power, and high-stability spintronic memories.

Description

Technical Field

[0001] The present invention relates to the technical field of molecular optoelectronic devices, and in particular, to a single-molecule spin memory based on dual-wavelength photoelectric effect and a preparation method thereof. Background Art

[0002] Existing storage technologies, especially semiconductor memories and magnetic memories, face bottlenecks in aspects such as storage density, speed, and power consumption. Magnetic memories rely on external magnetic fields during the writing process, resulting in high energy consumption and slow response speeds. Semiconductor memories (such as flash memories) are prone to degradation, poor thermal stability, etc. during miniaturization, and their read / write speeds are difficult to meet the requirements of large-scale data processing. Therefore, there is an urgent need for a new type of memory that can achieve high-speed and high-density data storage at low power consumption and solve the bottlenecks of existing technologies. Summary of the Invention

[0003] The present invention aims to solve at least one of the technical problems existing in the related art. For this purpose, the present invention provides a single-molecule spin memory based on dual-wavelength photoelectric effect and a preparation method thereof. By integrating multiple mechanisms such as photoelectric effect, chiral-induced spin selection effect (CISS), spin-transfer torque effect (STT), spin-orbit torque effect (SOT), and tunneling magnetoresistance effect (TMR), the read / write speed of the memory is significantly improved (reaching the nanosecond level), and the power consumption is significantly reduced (reaching the nanoampere level), providing a new solution for the next-generation ultra-high-speed, low-power, and highly integrated spintronic memories.

[0004] The present invention provides a single-molecule spin memory based on dual-wavelength photoelectric effect, comprising:

[0005] A magnetic metal-organic complex, which has a chiral-induced spin selection effect and self-assembles into two α-helical structures with opposite chirality; the magnetic metal-organic complex has a dual-wavelength photoelectric effect, and different photosensitive groups are excited by different light wavelengths to generate photocurrents;

[0006] A graphene nanogap array electrode, and the magnetic metal-organic complex is connected to the graphene nanogap array electrode through an amide covalent bond to form a magnetic metal-organic complex heterojunction;

[0007] A magnetic tunnel junction, which is symmetrically arranged on both sides of the magnetic metal-organic complex heterojunction;

[0008] A heavy metal back gate, and the graphene nanogap array electrode and the magnetic metal-organic complex are both assembled on the top of the heavy metal back gate.

[0009] Furthermore, the structural formula of the magnetic metal-organic complex is:

[0010]

[0011] Among them, n is an integer from 6 to 10; m is an integer from 6 to 10; M is any one of iron, cobalt, and nickel.

[0012] Furthermore, the magnetic tunnel junction includes a tunneling layer and a magnetic metal layer stacked in sequence. The tunneling layer includes any one of aluminum oxide, magnesium oxide, or molybdenum disulfide. The magnetic metal layer includes any one of iron, cobalt, or nickel. The tunneling layer is assembled on top of the heavy metal back gate. The thickness of the tunneling layer is 0.8 - 1.2 nm, and the thickness of the magnetic metal layer is 80 - 100 nm.

[0013] Furthermore, the heavy metal back gate includes a platinum layer, an aluminum oxide layer, and a hafnium oxide layer stacked in sequence. The bottom is the platinum layer with a deposition thickness of 50 - 80 nm, the deposition thickness of the aluminum oxide layer is 0.5 - 1 nm, and the top is the hafnium oxide layer with a deposition thickness of 0.5 - 1 nm.

[0014] Furthermore, it further includes a hexagonal boron nitride protective layer, and the hexagonal boron nitride protective layer covers the top of the magnetic tunnel junction, the graphene nano-gap array electrode, and the magnetic metal organic complex heterojunction.

[0015] The present invention also provides a preparation method of a single - molecule spin memory based on the dual - wavelength photoelectric effect for preparing the single - molecule spin memory based on the dual - wavelength photoelectric effect described in any one of the above, including the following steps:

[0016] S1: Prepare a magnetic metal organic complex;

[0017] S2: Prepare a heavy metal back gate;

[0018] S3: Prepare a graphene nano - gap array electrode, and prepare symmetric magnetic tunnel junctions on both sides of the graphene nano - gap array electrode;

[0019] S4: Connect the magnetic metal organic complex and the graphene nano - gap array electrode through a covalent bond to obtain a single - molecule spin memory;

[0020] S5: Assemble the single - molecule spin memory directly above the heavy metal back gate and prepare a hexagonal boron nitride protective layer directly above the single - molecule spin memory to obtain a single - molecule spin memory based on the dual - wavelength photoelectric effect.

[0021] Furthermore, S2 includes the following steps:

[0022] S21: Deposit SiO 2 on a thermally oxidized silicon wafer;

[0023] S22: Deposit a platinum layer on SiO at room temperature using DC magnetron sputtering technology; 2 ;

[0024] S23: Deposit an alumina layer on the platinum layer at room temperature using AC magnetron sputtering technology;

[0025] S24: Deposit a top hafnium oxide layer on the alumina layer at 100 °C - 200 °C using atomic layer deposition technology to obtain a back-gate sample;

[0026] S25: Anneal the back-gate sample to obtain a heavy-metal back-gate.

[0027] Further, S3 includes the following steps:

[0028] S31: Grow a single layer of graphene on the surface of a copper foil using chemical vapor deposition and transfer it to the surface of a silicon wafer with the aid of polymethyl methacrylate;

[0029] S32: Perform the first photolithography using an ultraviolet lithography machine, fabricate a marking pattern on the surface of the graphene and evaporate metals Cr and Au;

[0030] Perform the second photolithography using an ultraviolet lithography machine, fabricate a strip pattern on the surface of the graphene, and place it in a reactive ion etching machine for etching to obtain a graphene strip structure;

[0031] Perform the third photolithography using an ultraviolet lithography machine, fabricate electrode patterns on the left and right sides of the graphene strip structure, and sequentially evaporate magnesium oxide and cobalt by magnetron sputtering to obtain magnetic tunnel junctions on both sides of the graphene strip;

[0032] S33: Spin-coat a polymethyl methacrylate protective layer on the surface of the graphene strip structure with magnetic tunnel junctions on both sides, use electron beam lithography technology to fabricate a polymethyl methacrylate dotted window parallel to the metal electrodes, break the graphene into a head-to-head triangular array through the polymethyl methacrylate window by a reactive ion etching machine, and obtain a graphene nano-gap array electrode by electrical burnout.

[0033] Further, S4 includes the following steps:

[0034] S41: Mix a magnetic metal organic complex and a dehydrating activator, and dissolve them in a solvent in an anhydrous and oxygen-free environment to obtain a mixed solution;

[0035] S42: Seal the device with graphene nano-gap point electrodes in a two-neck flask, repeatedly perform the evacuation and gas replacement operations, add the mixed solution, make the reaction occur in an inert gas atmosphere, react for 24 - 48 h under dark conditions, take it out, wash it, and dry it to obtain a single-molecule spin memory.

[0036] Further, the dehydration activator is selected from any one of 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloride, dicyclohexylcarbodiimide, or N,N'-diisopropylcarbodiimide; the solvent is selected from any one of pyridine, dimethyl sulfoxide, or trichlorobenzene; the inert gas is argon or nitrogen; the molar ratio of the magnetic metal organic complex to the dehydration activator is 1:(20-40); the concentration of the dehydration activator is 2×10 -3 ~ 4×10 -3 mol / L.

[0037] One or more of the above technical solutions in the embodiments of the present invention have at least one of the following technical effects:

[0038] A single-molecule spin memory based on the dual-wavelength photoelectric effect and a preparation method thereof provided by the present invention provide an efficient spin storage solution through the combination of the photoelectric effect, the chiral-induced spin selection effect (CISS), the spin-transfer torque effect (STT), and the spin-orbit torque effect (SOT). Without using polarized light, the photosensitive group in the molecule is directly excited through the dual-wavelength photoelectric effect, and the generated photocurrent is converted into a spin-polarized current through the chiral spin selection effect (CISS). After flowing through the chiral helical polypeptide, different chiral structures generate currents with different spin directions, realizing precise spin control. Further using the STT effect, magnetic metal atoms are injected to trigger spin flipping for information writing. In addition, the SOT effect separates the writing path from the reading path, reducing the breakdown risk of the magnetic tunnel junction, significantly improving the reading and writing speed (nanosecond level) and reducing the power consumption (nanoampere level). The comprehensive application of this series of technologies promotes the development of high-speed, low-power, and high-stability spintronic memories.

[0039] The additional aspects and advantages of the present invention will be partially given in the following description, partially become apparent from the following description, or be understood through the practice of the present invention. Description of the Drawings

[0040] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0041] Figure 1 It is a schematic structural diagram of a single-molecule spin memory based on the dual-wavelength photoelectric effect of the present invention.

[0042] Figure 2Current - bias characteristic curves before and after connecting molecules of a single - molecule spin memory based on dual - wavelength photoelectric effect of the present invention.

[0043] Figure 3 Schematic diagram of information reading and writing without gate voltage of a single - molecule spin memory based on dual - wavelength photoelectric effect of the present invention.

[0044] Figure 4 Schematic diagram of information reading and writing with gate voltage of a single - molecule spin memory based on dual - wavelength photoelectric effect of the present invention.

[0045] Figure 5 For a single - molecule spin memory based on dual - wavelength photoelectric effect of the present invention R - Polypeptide synthesis roadmap.

[0046] Figure 6 For a single - molecule spin memory based on dual - wavelength photoelectric effect of the present invention S - Polypeptide synthesis roadmap.

[0047] Reference numerals:

[0048] 101, silicon wafer; 102, SiO 2 layer; 103, platinum layer; 104, alumina layer; 105, hafnium oxide layer; 106, tunneling layer; 107, magnetic metal layer; 108, graphene nanogap array electrode; 109, magnetic metal - organic complex; 110, hexagonal boron nitride protective layer. Detailed implementation manners

[0049] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below. Apparently, the described embodiments are part of the embodiments of the present invention, rather than all of them. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts belong to the scope of protection of the present invention. The following embodiments are used to illustrate the present invention, but cannot be used to limit the scope of the present invention.

[0050] In the following embodiments, the experimental methods used are all conventional methods unless otherwise specified, and the materials, reagents, etc. used are all commercially available unless otherwise specified.

[0051] The following combines Figures 1 to 6 to describe a single - molecule spin memory based on dual - wavelength photoelectric effect of the present invention and its preparation method.

[0052] As Figure 1 shown, a single - molecule spin memory based on dual - wavelength photoelectric effect

[0053] A single-molecule spin memory based on the dual-wavelength optoelectronic effect, comprising: a magnetic metal-organic complex 109, a graphene nanogap array electrode 108, a magnetic tunnel junction, and a heavy metal back gate;

[0054] The magnetic metal-organic complex has a chiral-induced spin selection effect and self-assembles into two α-helical structures with opposite chirality; the magnetic metal-organic complex has a dual-wavelength optoelectronic effect, and different photosensitive groups are excited by different light wavelengths to generate photocurrents; the magnetic metal-organic complex is connected to the graphene nanogap array electrode through an amide covalent bond to form a magnetic metal-organic complex heterojunction;

[0055] The magnetic tunnel junctions are symmetrically arranged on both sides of the magnetic metal-organic complex heterojunction;

[0056] The graphene nanogap array electrode 108, the magnetic metal-organic complex 109, and the magnetic tunnel junction are all assembled on the top of the heavy metal back gate.

[0057] The structural formula of the magnetic metal-organic complex is:

[0058]

[0059] Wherein, n is an integer from 6 to 10; m is an integer from 6 to 10; M is any one of iron, cobalt, and nickel.

[0060] The magnetic metal-organic complex is any one of A1 to A3.

[0061] The structural formula of A1 is:

[0062]

[0063] The structural formula of A2 is:

[0064]

[0065] The structural formula of A3 is:

[0066]

[0067] The magnetic tunnel junction includes a tunneling layer 106 and a magnetic metal layer 107 stacked in sequence. The tunneling layer 106 includes any one of aluminum oxide, magnesium oxide, or molybdenum disulfide, which only allows electrons to pass through in a tunneling manner, improving the spin-polarized current injection efficiency; the magnetic metal layer 107 includes any one of iron, cobalt, or nickel metals. The spin-up and spin-down electron states of these materials are unevenly distributed near the Fermi level, thereby generating a net magnetic moment, serving as the magnetic layer; when the magnetization directions of the magnetic layer and the magnetic metal organic complex are parallel to each other, the tunneling probability of electrons tunneling from one magnetic layer to another is relatively high, and the information is recorded as "1" at this time; while when the magnetization directions of the magnetic layer and the magnetic metal organic complex become anti-parallel, the tunneling probability is low, so the resistance increases, and the information is recorded as "0" at this time.

[0068] The tunneling layer is assembled on the top of the heavy metal back gate. The thickness of the tunneling layer is 0.8 - 1.2 nm, and the thickness of the magnetic metal layer is 80 - 100 nm.

[0069] The magnetic tunnel junction and the magnetic metal organic complex heterojunction together constitute the basic structure of the tunneling magnetoresistance (TMR) effect.

[0070] The heavy metal back gate includes a platinum layer 103, an aluminum oxide layer 104, and a hafnium oxide layer 105 stacked in sequence. Among them, the bottom is a platinum (Pt) layer with a deposition thickness of 50 - 80 nm, the deposition thickness of the aluminum oxide (Al 2 O 3 ) layer is 0.5 - 1 nm, and the top is a hafnium oxide (HfO 2 ) layer with a deposition thickness of 0.5 - 1 nm.

[0071] SiO 2 is deposited on the silicon wafer 101, and the heavy metal back gate is deposited on the SiO 2 layer 102.

[0072] In some specific embodiments of the present invention, when a current is passed through the heavy metal, a spin-orbit torque SOT is generated to induce the magnetization reversal of the molecule directly above it, as an auxiliary means for the spin-polarized current STT magnetization reversal of the polypeptide helix, without the need for an external magnetic field and electric field. This writing method eliminates the initial delay and improves the writing speed. Moreover, due to the assistance of the spin Hall effect, it is possible not to require the current flowing through the magnetic tunnel junction, avoiding potential barrier breakdown.

[0073] The top view of the heavy metal back gate Pt / Al 2 O 3 / HfO 2 is rectangular, with length and width dimensions of 2 mm × 0.02 mm, and is located directly below the molecular heterojunction.

[0074] The graphene nano-gap array electrode used in the present invention is matched in size with the magnetic metal-organic complex having a dual-wavelength optoelectronic effect, and its end is a carboxyl group, which can form a stable amide bond with the amino group at the end of the magnetic metal-organic complex through an amide condensation reaction, capable of improving the charge transfer speed, thereby enhancing the operating speed and stability of the device, enabling the device to switch sensitively and rapidly between high and low conductance states.

[0075] Among them, the thickness of the graphene nano-gap array electrode is 0.5 - 2 nm, the gap distance is 2 - 20 nm, and it is located directly above the heavy metal back gate. The thickness of the magnetic metal-organic complex heterojunction having a dual-wavelength optoelectronic effect is 0.5 - 2 nm, and it is located directly above the heavy metal back gate.

[0076] Switching the illumination wavelength can cause the magnetic metal-organic complex to rapidly switch its own high and low conductance states, which respectively represent binary data "0" and "1" and serve as carriers of information.

[0077] Among them, different illumination wavelengths can excite different photosensitive groups to generate photocurrents. 351 nm excites the ECz photosensitive group to generate a photocurrent, and 459 nm excites the Ru photosensitive group to generate a reverse photocurrent; when switching the illumination wavelength, currents are respectively injected from both sides into α-helices of different chiralities, and according to the CISS effect, spin-polarized currents with different spin directions are generated; and according to the STT effect, the magnetic metal atoms at the center of the molecule are magnetized in different directions, and under the TMR effect, they exhibit two conductance states of high and low, realizing the writing of information. Therefore, changing the illumination wavelength can achieve the switching between "0" and "1".

[0078] It also includes a hexagonal boron nitride protective layer 110, and the hexagonal boron nitride (h-BN) protective layer covers the top of the magnetic tunnel junction, the graphene nano-gap array electrode, and the magnetic metal-organic complex heterojunction. On the one hand, it suppresses molecular conformational perturbation through van der Waals contact, reducing electrical noise; on the other hand, it isolates external electromagnetic interference and the action of air, improving the storage stability and anti-interference ability of the device.

[0079] A single-molecule spin memory based on the dual-wavelength optoelectronic effect provides a novel information storage and processing solution by integrating multiple mechanisms such as the optoelectronic effect, chiral-induced spin selectivity (CISS), spin-transfer torque effect (STT), spin-orbit torque effect (SOT), and tunneling magnetoresistance effect (TMR). First, the introduction of the dual-wavelength optoelectronic effect enables precise control of the switching of the current direction by selecting different illumination wavelengths. Then, CISS utilizes the chiral differences of helical polypeptides to generate polarized currents with different spin directions. Further, STT is used to inject magnetic metal atoms to trigger spin flipping, achieving an efficient writing process. On the other hand, TMR can read the conductance states of magnetic metal atoms in two magnetization directions with a weak current through two magnetic electrodes on both sides. At the same time, SOT can separate the writing path from the reading path by assisting the magnetization flipping of magnetic metal atoms through a heavy metal back gate, avoiding the breakdown of the magnetic tunnel junction and thus improving the reliability and read-write speed of the storage device. Through the comprehensive application of these technologies, the read-write speed of the memory has been significantly improved (reaching the nanosecond level), and the power consumption has been significantly reduced (reaching the nanoampere level), providing a novel solution for the next-generation ultra-high-speed, low-power, and highly integrated spintronic memory.

[0080] A preparation method of a single-molecule spin memory based on the dual-wavelength optoelectronic effect is used to prepare a single-molecule spin memory based on the dual-wavelength optoelectronic effect, and includes the following steps:

[0081] S1: Prepare a magnetic metal organic complex;

[0082] S11: Prepare R - polypeptide (molecule 1), R - The structural formula of the polypeptide is:

[0083]

[0084] The synthesis route is as Figure 5 shown, R - The synthesis of the polypeptide adopts the standard protecting gene (Fmoc) protection solid-phase synthesis method (SPPS), and the specific steps are as follows: First, Wang resin is swollen in N,N-dimethylformamide (DMF) for 15 min to fully expose the reaction sites, and then a solution of 30% piperidine + 70% DMF (volume ratio) is added, and the reaction is oscillated for 15 min to remove the Fmoc protecting group. Ninhydrin detection shows that the resin is blue-violet, indicating successful deprotection. 4 times the molar equivalent of the R-configured amino acid, HATU (polypeptide condensation reagent), and 6 times the molar equivalent of N,N-diisopropylethylamine (DIEA) are added, and after oscillating the reaction for 1 h, DMF, CH 3 OH and CH 2 Cl 2The washing resin shows a light yellow color when detected by ninhydrin, indicating the successful condensation of amino acids. After removing the Fmoc protecting group again using a 30% piperidine + 70% DMF (volume ratio) solution, an amino acid, HATU, and DIEA are added to carry out the coupling reaction of the next amino acid. Such cyclic operations are performed until all amino acids are connected. Finally, 95% TFA + 2.5% TIPS + 2.5% H 2 O (volume ratio) is used as a cleavage reagent to react with the resin for 3 h to separate the polypeptide from the resin. After filtering and collecting the cleavage solution, it is concentrated using a rotary evaporator. Then, -20 °C ether is added to precipitate the solid, and the precipitate is collected by centrifugation to obtain the crude polypeptide product. Purification is carried out using a preparative reversed-phase high-performance liquid chromatography (High Performance Liquid Chromatography, abbreviated as HPLC) equipped with a Durashell C18 separation column (C18, 10 μm, 150 Å, 30 × 150 mm). The mobile phase gradient is set from "5% acetonitrile + 95% water" (volume ratio) to "95% acetonitrile + 5% water" (volume ratio), the flow rate is 10 mL / min, and the filtrate corresponding to the target absorption peak is collected and freeze-dried to obtain R - polypeptide.

[0085] 1 H NMR (400 MHz, Chloroform- d ) δ 9.56 (s, 1H), 7.47 (d, J = 8.6 Hz,1H), 7.37 (d, J = 8.0 Hz, 5H), 7.18 (d, J = 7.7 Hz, 1H), 4.32 – 4.19 (m, 7H),3.65 (p, J = 5.8 Hz, 1H), 2.92 (dd, J = 7.9, 5.4 Hz, 1H), 2.66 (dd, J = 8.0, 5.4Hz, 1H), 1.75 – 1.47 (m, 24H), 0.94 (d, J = 6.9 Hz, 3H), 0.92 – 0.86 (m, 24H),0.86 – 0.80 (m, 21H).

[0086] 13 C NMR (100 MHz, Chloroform- d) δ 175.43, 174.78, 173.22, 173.17, 173.16, 173.11, 173.06, 173.00, 52.76, 52.70, 52.63, 52.57, 52.51, 52.21, 51.71, 51.61, 41.93, 41.61, 40.76, 40.07, 40.03, 39.98, 39.94, 39.92, 25.01, 24.56, 24.53, 24.51, 24.49, 24.47, 24.44, 24.41, 22.53, 22.52, 22.51, 22.50, 22.49, 22.47, 22.46, 22.45, 22.44, 22.42, 22.41, 22.40, 22.36, 22.35。

[0087] S12: Prepare S - polypeptide (molecule 2), S - The structural formula of the polypeptide is:

[0088]

[0089] S - The synthetic route of the polypeptide is as Figure 6 shown, S - The synthesis of the polypeptide adopts the standard Fmoc - protected solid - phase peptide synthesis method (SPPS). The specific steps are as follows: First, Wang resin is swollen in DMF for 15 min to fully expose the reaction sites. Then, a solution of 30% piperidine + 70% DMF (by volume) is added, and the reaction is shaken for 15 min to remove the Fmoc protecting group. Ninhydrin detection shows that the resin turns blue - violet, indicating successful de - protection. 4 times the molar equivalent of the R - configuration amino acid, HATU, and 6 times the molar equivalent of DIEA with respect to the resin are added. After shaking the reaction for 1 h, the resin is washed with DMF, CH 3 OH and CH 2 Cl 2 . Ninhydrin detection shows that the resin turns light yellow, indicating successful amino acid condensation. After removing the Fmoc protecting group again using the 30% piperidine + 70% DMF (by volume) solution, amino acid, HATU, and DIEA are added for the coupling reaction of the next amino acid. Such cyclic operations are carried out until all amino acids are connected. Finally, 95% trifluoroacetic acid (TFA) + 2.5% triisopropylsilyloxy (TIPS) + 2.5% H 2O (volume ratio) was used as a cleavage reagent to react with the resin for 3 h to separate the polypeptide from the resin. After filtering and collecting the cleavage solution, it was concentrated using a rotary evaporator. Then, ether at -20 °C was added to precipitate the product, and the precipitate was collected by centrifugation to obtain the crude polypeptide product. Purification was performed using preparative reversed-phase HPLC equipped with a Durashell C18 separation column (C18, 10 μm, 150 Å, 30 × 150 mm). The mobile phase gradient was set from "5% acetonitrile + 95% water" (volume ratio) to "95% acetonitrile + 5% water" (volume ratio), with a flow rate of 10 mL / min. The filtrate corresponding to the target absorption peak was collected and lyophilized to obtain S - polypeptide.

[0090] 1 H NMR (400 MHz, Chloroform- d ) δ 9.56 (s, 1H), 7.47 (d, J = 8.6 Hz,1H), 7.37 (d, J = 8.0 Hz, 5H), 7.18 (d, J = 7.7 Hz, 1H), 4.32 – 4.19 (m, 7H),3.65 (p, J = 5.8 Hz, 1H), 2.92 (dd, J = 7.9, 5.4 Hz, 1H), 2.66 (dd, J = 8.0, 5.4Hz, 1H), 1.75 – 1.47 (m, 24H), 0.94 (d, J = 6.9 Hz, 3H), 0.92 – 0.86 (m, 24H),0.86 – 0.80 (m, 21H).

[0091] 13 C NMR (100 MHz, Chloroform- d) δ 175.43, 174.78, 173.22, 173.17, 173.16, 173.11, 173.06, 173.00, 52.76, 52.70, 52.63, 52.57, 52.51, 52.21, 51.71, 51.61, 41.93, 41.61, 40.76, 40.07, 40.03, 39.98, 39.94, 39.92, 25.01, 24.56, 24.53, 24.51, 24.49, 24.47, 24.44, 24.41, 22.53, 22.52, 22.51, 22.50, 22.49, 22.47, 22.46, 22.45, 22.44, 22.42, 22.41, 22.40, 22.36, 22.35。

[0092] S13: Prepare molecule 4 that can be excited by short-wavelength light;

[0093]

[0094] Add C 18 H 15 F 3 N 2 O 3 A solution of (molecule 3) (1.0 mmol), EDCI (1.1 mmol), DMAP (0.1 mmol) in DCM (5 mL) was stirred at room temperature for 15 min, and then a solution of molecule 1 (1.0 mmol) in DCM (1 mL) was slowly added. The reaction mixture was stirred at room temperature for 12 h. The reaction was quenched with water, then extracted with DCM, washed with aqueous sodium bicarbonate solution, the organic phases were combined, dried, concentrated, and purified by column chromatography to obtain molecule 4 that can be excited by short-wavelength light.

[0095] 1 H NMR (400 MHz, Chloroform- d ) δ 9.56 (s, 1H), 9.21 (d, J = 10.8 Hz, 1H), 8.20 (d, J = 2.2 Hz, 1H), 8.15 (dd, J = 7.9, 1.0 Hz, 1H), 7.54 (d, J = 7.9 Hz, 1H), 7.47 (dd, J= 8.5, 1.2 Hz, 2H), 7.39 – 7.34 (m, 8H), 7.33 – 7.24 (m, 2H), 5.58 (d, J = 10.8 Hz, 1H), 4.36 (q, J = 5.2 Hz, 2H), 4.33 – 4.20 (m, 8H), 1.72 – 1.48 (m, 24H), 1.38 (t, J = 5.2 Hz, 3H), 0.92 – 0.87 (m, 24H), 0.86 – 0.80 (m, 24H).

[0096] 13 C NMR (100 MHz, Chloroform- d ) δ175.43, 173.23, 173.17, 173.16, 173.11, 173.07, 173.06, 173.00, 172.30, 141.44, 138.63, 130.13, 126.66, 125.25, 123.56, 122.76, 122.14, 120.05, 119.52, 114.89, 110.05, 56.96, 56.94, 52.83, 52.76, 52.70, 52.63, 52.57, 52.21, 52.03, 51.61, 40.76, 40.36, 40.11, 40.07, 40.03, 39.98, 39.94, 39.92, 37.62, 24.58, 24.56, 24.53, 24.51, 24.49, 24.47, 24.44, 24.41, 22.56, 22.55, 22.53, 22.52, 22.51, 22.50, 22.49, 22.47, 22.46, 22.45, 22.44, 22.42, 22.41, 22.40, 22.36, 22.35, 13.36.

[0097] S14: Preparation of molecule 7 that can be excited by long-wavelength light;

[0098]

[0099] First, use molecule 2 and molecule 5 to prepare the ligand molecule 6 of molecule 7 according to the synthesis method of molecule 4;

[0100] 11H NMR (400 MHz, Chloroform- d ) δ 9.56 (s, 1H), 9.13 (d, J J = 10.8 Hz,1H), 8.67 (d, J J = 4.3 Hz, 1H), 8.64 (dd, J J = 4.1, 1.7 Hz, 1H), 8.26 (dd, J J = 8.3,1.3 Hz, 1H), 8.05 (d, J J = 2.4 Hz, 1H), 7.77 (ddd, J J = 8.7, 7.2, 1.7 Hz, 1H), 7.54(d, J J = 7.9 Hz, 1H), 7.49 – 7.45 (m, 2H), 7.37 (d, J J = 8.2 Hz, 6H), 7.27 (ddd, J J=7.1, 4.0, 1.3 Hz, 1H), 5.64 (d, J J = 10.8 Hz, 1H), 4.34 – 4.22 (m, 7H), 4.18(dt, J J = 8.7, 7.0 Hz, 1H), 1.74 – 1.45 (m, 24H), 0.91 – 0.87 (m, 24H), 0.86 –0.81 (m, 24H).

[0101] 13 13C NMR (100 MHz, Chloroform- d) δ 175.43, 173.23, 173.17, 173.16, 173.11, 173.07, 173.06, 173.00, 172.32, 156.22, 155.36, 149.54, 149.35, 141.51, 138.07, 123.68, 122.27, 122.04, 121.23, 57.04, 57.03, 52.83, 52.76, 52.70, 52.63, 52.57, 52.21, 52.03, 51.61, 40.76, 40.36, 40.11, 40.07, 40.03, 39.98, 39.94, 39.92, 24.58, 24.56, 24.53, 24.51, 24.49, 24.47, 24.44, 24.41, 22.56, 22.55, 22.53, 22.52, 22.51, 22.50, 22.49, 22.47, 22.46, 22.45, 22.44, 22.42, 22.41, 22.40, 22.36, 22.35。

[0102] Subsequently, molecule 7 was prepared;

[0103] In a nitrogen atmosphere, a dichloromethane (DCM) solution (10 mL) of molecule 6 (1.0 mmol), Ru(bpy) 2 Cl 2 ·2H 2 O (1.1 mmol), and NH 4 PF 6 (10.0 mmol) was refluxed at 85 °C for 3.5 h. After the reaction was completed, the solution was removed and purified by column chromatography to obtain molecule 7.

[0104] 1 H NMR (400 MHz, Chloroform- d ) δ 9.56 (s, 1H), 9.12 (d, J = 10.8 Hz, 1H), 8.31 – 8.19 (m, 6H), 7.71 (ddd, J = 9.2, 7.2, 1.8 Hz, 6H), 7.54 (d, J = 7.9 Hz, 1H), 7.47 (d, J= 8.6 Hz, 1H), 7.41 – 7.31 (m, 11H), 7.28 – 7.15 (m, 6H), 5.60 (d, J = 10.6 Hz, 1H), 4.34 – 4.11 (m, 8H), 1.73 – 1.48 (m, 24H), 0.92 – 0.87 (m, 24H), 0.86 – 0.78 (m, 24H).

[0105] 13 C NMR (100 MHz, Chloroform- d ) δ173.33, 149.60, 148.99, 148.96, 148.67, 129.84, 129.81, 126.19, 124.50, 123.65, 123.04, 122.14, 56.60, 52.37, 52.35, 51.88, 51.61, 41.27, 40.46, 39.97, 39.94, 24.37, 24.30, 22.43, 22.37.

[0106] S15: Prepare molecule 10, a protecting group for amino groups, using metal M-porphyrin complex 8 and different photo-responsive groups (molecule 4 and molecule 7);

[0107]

[0108] First, prepare molecule 9 using metal M-porphyrin complex 8 and molecule 4 according to the synthesis method of molecule 4;

[0109] 1 H NMR (400 MHz, Chloroform- d ) δ 9.43 (s, 1H), 9.21 (d, J = 10.8 Hz, 1H), 8.20 (d, J = 2.2 Hz, 1H), 8.15 (dd, J = 7.9, 1.0 Hz, 1H), 7.62 – 7.59 (m, 2H), 7.54 (d, J = 7.9 Hz, 1H), 7.52 – 7.41 (m, 9H), 7.39 – 7.33 (m, 8H), 7.32 – 7.22 (m, 3H), 7.18 (d, J= 7.9 Hz, 1H), 7.13 – 7.00 (m, 7H), 6.82 – 6.78 (m,2H), 5.58 (d, J = 10.8 Hz, 1H), 4.36 (q, J = 5.2 Hz, 2H), 4.29 (dtdd, J = 13.0,6.6, 3.4, 1.8 Hz, 8H), 4.21 (d, J = 5.6 Hz, 1H), 4.13 (d, J = 5.6 Hz, 1H), 1.75 –1.51 (m, 22H), 1.38 (t, J = 5.2 Hz, 3H), 0.92 – 0.86 (m, 24H), 0.85 – 0.81 (m,24H).

[0110] 13 C NMR (100 MHz, Chloroform- d ) δ 173.33, 130.95, 130.59, 126.16,125.91, 125.83, 125.52, 125.09, 125.03, 121.44, 119.64, 119.52, 118.64,118.16, 115.31, 115.10, 114.57, 113.82, 112.88, 111.21, 110.13, 109.22,57.57, 52.87, 52.37, 51.61, 40.48, 40.46, 39.94, 37.94, 24.53, 24.37, 22.43,13.33.

[0111] In the same way, molecule 10 with a protecting group for the amino group was prepared using molecule 9 and molecule 7;

[0112]

[0113] 1 H NMR (400 MHz, Chloroform- d ) δ 9.43 (s, 2H), 9.21 (d, J = 10.8 Hz,1H), 9.12 (d, J = 10.8 Hz, 1H), 8.32 – 8.11 (m, 8H), 7.71 (ddd,J = 9.2, 7.1, 1.9 Hz, 6H), 7.64 – 7.58 (m, 4H), 7.54 (d, J = 7.9 Hz, 2H), 7.52 – 7.46 (m, 6H), 7.43 – 7.39 (m, 4H), 7.39 – 7.32 (m, 19H), 7.32 – 6.99 (m, 18H), 5.64 – 5.53 (m, 2H), 4.36 (q, J = 5.2 Hz, 2H), 4.33 – 4.24 (m, 16H), 1.75 – 1.52 (m, 49H), 1.38 (t, J = 5.2 Hz, 3H), 0.91 – 0.86 (m, 48H), 0.86 – 0.79 (m, 48H).

[0114] 13 C NMR (100 MHz, Chloroform- d ) δ 173.33, 148.99, 148.67, 130.59, 130.41, 129.84, 126.19, 123.04, 118.68, 118.64, 52.37, 51.61, 40.48, 40.46, 39.95, 24.53, 24.37, 22.43, 13.33.

[0115] S16: The protecting groups at both ends of the deaminated molecule 10 are removed to obtain a magnetic metal-organic complex (molecule 11);

[0116]

[0117] Under a nitrogen atmosphere, 10 (1.0 mmol), K 2 CO 3 (2.2 mmol) in a mixed solution of methanol and water (10 mL, V 甲醇 : V 水 = 1:1) was stirred at room temperature for 8 h. After the reaction was completed, extraction was carried out with DCM, the organic phases were combined, dried, concentrated, and then purified by recrystallization with petroleum ether to obtain the magnetic metal-organic complex.

[0118] 1 H NMR (400 MHz, Chloroform- d) δ 9.43 (s, 2H), 8.32 – 8.21 (m, 7H), 8.17 – 8.12 (m, 1H), 7.81 (d, J = 2.3 Hz, 1H), 7.72 (dt, J = 8.3, 1.6 Hz, 5H), 7.65 – 7.58 (m, 4H), 7.54 – 7.45 (m, 6H), 7.43 – 6.99 (m, 42H), 5.08 (dt, J =16.3, 5.6 Hz, 2H), 4.33 – 4.18 (m, 20H), 1.75 – 1.51 (m, 48H), 1.38 (t, J = 5.2Hz, 3H), 0.94 – 0.86 (m, 48H), 0.85 – 0.74 (m, 48H).

[0119] 13 C NMR (100 MHz, Chloroform- d ) δ 173.33, 148.99, 148.67, 130.59, 130.41, 129.84, 126.19, 123.04, 118.68, 118.64, 52.37, 51.93, 40.48, 40.44, 39.95, 24.53, 24.37, 22.43, 13.33.

[0120] S2: Preparation of heavy metal back gate;

[0121] S21: Deposition of SiO 2 on the thermally oxidized silicon wafer; wherein, the size of the silicon wafer is 10 mm×10 mm, and the thickness of the SiO 2 layer is 300 nm;

[0122] S22: Deposition of a platinum layer on SiO 2 at room temperature using DC magnetron sputtering technology; the length and width dimensions of the platinum layer are 2 mm×0.02 mm, and the thickness is 50 - 80 nm;

[0123] S23: Deposition of an alumina layer on the platinum layer at room temperature using AC magnetron sputtering technology; the length and width dimensions of the alumina layer are 2 mm×0.02 mm, and the thickness is 0.5 - 1 nm;

[0124] S24: Deposit a top hafnium oxide layer on the alumina layer at (100 °C to 200 °C) using atomic layer deposition technology to obtain a back gate sample; the thickness of the hafnium oxide layer is 0.5 to 1 nm;

[0125] S25: Anneal the back gate sample to obtain a heavy metal back gate;

[0126] Among them, the annealing treatment is annealing at 200 °C for 30 minutes to enhance the bonding force and flatness between the Pt / Al 2 O 3 / HfO 2 layers.

[0127] S3: Prepare a graphene nanogap array electrode, and prepare symmetric magnetic tunnel junctions on both sides of the graphene nanogap array electrode;

[0128] S31: Grow a single layer of graphene on the surface of a copper foil by chemical vapor deposition, and transfer it to the surface of a silicon wafer with the help of polymethyl methacrylate (PMMA);

[0129] S32: Perform the first photolithography using an ultraviolet lithography machine, make a marking pattern on the graphene surface and evaporate metals Cr and Au;

[0130] Perform the second photolithography using an ultraviolet lithography machine, make a strip pattern on the graphene surface, and place it in a reactive ion etching machine for etching to obtain a graphene strip structure; the size of the graphene strip structure is 2.15 mm × 0.03 mm;

[0131] Perform the third photolithography using an ultraviolet lithography machine, make electrode patterns on the left and right sides of the graphene strip, and sequentially evaporate magnesium oxide and cobalt by magnetron sputtering to obtain magnetic tunnel junctions on both sides of the graphene strip; among them, the thickness of the magnesium oxide is 0.8 nm, and the thickness of the cobalt is 80 nm.

[0132] S33: Spin-coat a PMMA protective layer on the surface of the graphene strip structure with magnetic tunnel junctions on both sides, use electron beam lithography (EBL) to make PMMA dotted windows parallel to the metal electrodes, the size of each PMMA dotted window is 150 nm × 5 nm, and break the graphene into a head-to-head triangular array through the PMMA window by reactive ion etching machine (RIE), and obtain a graphene nanogap array electrode by electro-burning.

[0133] S4: Connect the magnetic metal organic complex with the graphene nanogap array electrode through a covalent bond to obtain a single molecule spin memory;

[0134] S41: Mix the magnetic metal organic complex and a dehydration activator, and dissolve them in a solvent in an anhydrous and oxygen-free environment to obtain a mixed solution;

[0135] S42: Seal the device with graphene nano-gap point electrodes in a two-neck flask, repeatedly perform evacuation and gas replacement operations, add the mixed solution, make the reaction under an inert gas atmosphere, react for 24 - 48 h under dark conditions, take out, wash, and dry to obtain a single-molecule spin memory;

[0136] The dehydration activator is selected from any one of 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloride, dicyclohexylcarbodiimide, or N,N'-diisopropylcarbodiimide; the solvent is selected from any one of pyridine, dimethyl sulfoxide, or trichlorobenzene; the inert gas is argon or nitrogen; the molar ratio of the magnetic metal organic complex to the dehydration activator is 1:(20 - 40); the concentration of the dehydration activator is 2×10 -3 ~ 4×10 -3 mol / L.

[0137] S5: Assemble the single-molecule spin memory directly above the heavy metal back gate and prepare a hexagonal boron nitride protective layer directly above the single-molecule spin memory to obtain a single-molecule spin memory based on the dual-wavelength photoelectric effect.

[0138] In some embodiments of the present invention, the 1H and 13C NMR spectra of the compound are recorded on a Variance Mercury plus 300 MHz and a Bruker ARX500 NMR spectrometer; all chemical shifts of 1H are referenced to tetramethylsilane (TMS, δ = 0.00 ppm) or deuterated chloroform (Chloroform-d, CDCl3, δ = 7.26 ppm), and the 13C NMR chemical shifts are referenced to CDCl3 (δ = 77.00 ppm). The mass spectrum is recorded on a Bruker APEX IV mass spectrometer.

[0139] The electrical tests are carried out under vacuum conditions (<1×10 -4 Pa).

[0140] Test instruments: Semiconductor parameter analyzer (Keysight, B1500A), probe station (Janis Research Company, ST-500), comprehensive physical property test system (Quantum Design, PPMS DynaCool). A light source with a specific wavelength is applied to the device by using a femtosecond laser. The test temperature is precisely regulated jointly by liquid nitrogen, liquid helium, and a heating platform.

[0141] The electrical test steps include:

[0142] At any temperature in the temperature range of 2 K - 300 K, apply a source-drain voltage range: , with an interval of 5 mV, the current-voltage curves of the single-molecule spin memory before and after connecting the molecule were measured as the current changes with the bias voltage, as Figure 2 shown; I is the source-drain current and V is the source-drain voltage. Before connecting the molecule, I remained at 0 nA. After connecting the molecule, the absolute value of I was greater than 5 nA at ±1 V voltage and showed non-linear characteristics, proving that the molecule was successfully connected.

[0143] At any temperature in the temperature range of 2 K to 300 K, light illumination of 50 mW (351 nm) was applied for writing, 0.001 V for reading, light illumination of 50 mW (459 nm) for writing, 0.001 V for reading, without applying a gate voltage, and continuous erasing and writing were performed 100 times, as Figure 3 shown. It can be seen that the read and write performance of the single-molecule spin memory is stable, the read and write speed is at the 10 - 100 ns level, and the read and write power consumption is at the 0.01 - 1 nA level; Figure 3 In Figure (a), light illumination of 50 mW (351 nm) was applied for writing in sequence without applying a gate voltage to obtain a source-drain current of 1 nA, 0.001 V for reading without applying a gate voltage to obtain a source-drain current of 0.02 nA, light illumination of 50 mW (459 nm) for writing without applying a gate voltage to obtain a source-drain current of 1 nA, 0.001 V for reading without applying a gate voltage to obtain a source-drain current of 0.06 nA, and continuous read and write were performed 100 times. Figure 3 In Figure (b), the curve in the range of 3000 - 4000 ns in Figure 3 Figure (a) was magnified to more clearly show the magnitude of the current.

[0144] After applying an auxiliary writing voltage of 0.5 V to the heavy metal gate, the above-mentioned writing and reading steps were repeated again. Only light illumination of 5 mW (351 nm) was applied for writing, 0.0001 V for reading, light illumination of 5 mW (459 nm) for writing, 0.0001 V for reading, and continuous erasing and writing were performed 100 times, as Figure 4 shown. It can be seen that the gate voltage can increase the read and write speed by an order of magnitude to the 1 - 10 ns level and reduce the read and write power consumption by an order of magnitude to the 0.001 - 0.1 nA level. Figure 4 In Figure (a), light illumination of 5 mW (351 nm) was applied for writing in sequence with a gate voltage of 0.5 V to obtain a source-drain current of 0.1 nA, 0.0001 V for reading with a gate voltage of 0.5 V to obtain a source-drain current of 0.002 nA, light illumination of 5 mW (459 nm) for writing with a gate voltage of 0.5 V to obtain a source-drain current of 0.1 nA, 0.0001 V for reading with a gate voltage of 0.5 V to obtain a source-drain current of 0.006 nA, and continuous read and write were performed 100 times. Figure 4 In Figure (b), the curve in the range of 3000 - 4000 ns in Figure 4 Figure (a) was magnified to more clearly show the magnitude of the current.

[0145] All reactions of this application were carried out using standard Schlenk techniques in dry solvents and an inert argon atmosphere.

[0146] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A single-molecule spin memory based on dual-wavelength photoelectric effect, characterized in that: include: A magnetic metal organic complex, wherein the magnetic metal organic complex has a chiral induced spin selection effect and self-assembles into two α-helical structures with opposite chirality; the magnetic metal organic complex has a dual-wavelength photoelectric effect, and different light wavelengths excite different photosensitive groups to generate photocurrent; The structural formula of the magnetic metal organic complex is: Wherein, n is an integer of 6 to 10; m is an integer of 6 to 10; M is any one of iron, cobalt, and nickel; A graphene nanogap array electrode, wherein the magnetic metal organic complex is connected to the graphene nanogap array electrode through an amide covalent bond to form a magnetic metal organic complex heterojunction; A magnetic tunnel junction, wherein the magnetic tunnel junction is symmetrically arranged on both sides of the magnetic metal-organic complex heterojunction; A heavy metal back gate, the graphene nanogap array electrode and the magnetic metal organic complex are assembled on the top of the heavy metal back gate, The graphene nanogap array electrodes are arranged on the left and right sides of the top of the heavy metal back gate, and the magnetic tunnel junctions are symmetrically arranged on the left and right sides of the top of the heavy metal back gate. The magnetic metal organic complex is connected between the graphene nanogap array electrode on the left and the graphene nanogap array electrode on the right through an amide covalent bond.

2. A single-molecule spin memory based on dual-wavelength photoelectric effect according to claim 1, characterized in that: The magnetic tunnel junction includes a tunneling layer and a magnetic metal layer stacked in sequence, the tunneling layer includes any one of aluminum oxide, magnesium oxide or molybdenum disulfide, the magnetic metal layer includes any one of iron, cobalt or nickel, the tunneling layer is assembled on the top of the heavy metal back gate, the tunneling layer has a thickness of 0.8~1.2 nm, and the magnetic metal layer has a thickness of 80~100 nm.

3. The single-molecule spin memory based on dual-wavelength photoelectric effect according to claim 1, characterized in that: The heavy metal back gate includes a platinum layer, an aluminum oxide layer and a hafnium oxide layer stacked in sequence, wherein the bottom is a platinum layer with a deposition thickness of 50-80 nm, the aluminum oxide layer has a deposition thickness of 0.5-1 nm, and the top is a hafnium oxide layer with a deposition thickness of 0.5-1 nm.

4. The single-molecule spin memory based on dual-wavelength photoelectric effect according to claim 1, characterized in that: It also includes a hexagonal boron nitride protective layer, which covers the magnetic tunnel junction, the graphene nanogap array electrode and the top of the magnetic metal organic complex heterojunction.

5. A method for preparing a single-molecule spin memory based on a dual-wavelength photoelectric effect, characterized in that: The method for preparing a single-molecule spin memory based on the dual-wavelength photoelectric effect as claimed in any one of claims 1 to 4 comprises the following steps: S1: Preparation of magnetic metal organic complexes; S2: preparing heavy metal back gate; S3: preparing a graphene nanogap array electrode, and preparing a symmetrical magnetic tunnel junction on both sides of the graphene nanogap array electrode; S4: Magnetic metal organic complexes are connected to graphene nanogap array electrodes through covalent bonds to obtain single-molecule spin memory; S5: Assemble the single-molecule spin memory just above the heavy metal back gate and prepare a hexagonal boron nitride protective layer just above the single-molecule spin memory to obtain a single-molecule spin memory based on the dual-wavelength photoelectric effect.

6. The method for preparing a single-molecule spin memory based on dual-wavelength photoelectric effect according to claim 5, characterized in that: S2 includes the following steps: S21: Depositing SiO2 on the thermally oxidized silicon wafer; S22: Platinum layer deposited on SiO2 at room temperature using DC magnetron sputtering technique; S23: depositing an aluminum oxide layer on the platinum layer at room temperature using an AC magnetron sputtering technique; S24: Depositing a top hafnium oxide layer on the aluminum oxide layer at 100° C. to 200° C. using an atomic layer deposition technique to obtain a back gate sample; S25: annealing the back gate sample to obtain a heavy metal back gate.

7. The method for preparing a single-molecule spin memory based on dual-wavelength photoelectric effect according to claim 5, characterized in that: S3 includes the following steps: S31: growing a single layer of graphene on the surface of copper foil by chemical vapor deposition and transferring it to the surface of silicon wafer by means of polymethyl methacrylate; S32: using a UV lithography machine to perform the first photolithography, making a marking pattern on the graphene surface and evaporating metal Cr and Au; A second photolithography is performed using an ultraviolet photolithography machine to produce a stripe pattern on the graphene surface, and then the graphene is etched in a reactive ion etcher to obtain a graphene stripe structure; A third photolithography process was performed using an ultraviolet lithography machine to make electrode patterns on the left and right sides of the graphene strip structure, and magnesium oxide and cobalt were sequentially evaporated by magnetron sputtering to obtain magnetic tunnel junctions on both sides of the graphene strip. S33: A polymethyl methacrylate protective layer is spin-coated on the surface of the graphene strip structure with magnetic tunnel junctions on both sides, and a polymethyl methacrylate dotted window parallel to the metal electrode is made using electron beam exposure technology. The graphene is broken into head-to-head triangular arrays through the polymethyl methacrylate window using a reactive ion etcher, and the graphene nanogap array electrode is obtained by electrical burning.

8. The method for preparing a single-molecule spin memory based on dual-wavelength photoelectric effect according to claim 5, characterized in that: S4 includes the following steps: S41: mixing the magnetic metal organic complex and the dehydration activator, and dissolving them in a solvent in an anhydrous and oxygen-free environment to obtain a mixed solution; S42: The device containing the graphene nanogap array electrode is sealed in a two-necked flask, and the evacuation operation is repeated, and the mixed solution is added to make the reaction in an inert gas atmosphere, and the reaction is carried out in the dark for 24 to 48 hours, and then the device is taken out, washed, and dried to obtain a single-molecule spin memory.

9. The method for preparing a single-molecule spin memory based on dual-wavelength photoelectric effect according to claim 8, characterized in that: The dehydration activator is selected from any one of 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloric acid, dicyclohexylcarbodiimide or N,N'-diisopropylcarbodiimide; the solvent is selected from any one of pyridine, dimethyl sulfoxide or trichlorobenzene; the inert gas is argon or nitrogen; the molar ratio of the magnetic metal organic complex to the dehydration activator is 1:(20-40); the concentration of the dehydration activator is 2×10 -3 ~ 4×10 -3 mol / L.

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