A method and device for high-precision etching of the surface of an optoelectronic chip

Abstract

The present invention relates to the field of chip etching technology, and specifically to a method and device for high-precision etching of the surface of an optoelectronic chip. The method determines a laser response relationship value according to the line characteristics of the etching profile corresponding to the corner points in the etching path of the laser beam during the etching process of the optoelectronic chip surface, the angle change between different corner points, and the response relationship between the energy scattering rate; determines the scanning oscillation risk value at the corner point position according to the attenuation of the etching scanning speed of the laser beam; introduces a dynamic error based on the scanning oscillation risk value to determine the heat loss probability of the laser beam characteristics; determines the adjustment coefficient of etching to different corner points in combination with the laser response relationship value and the heat loss probability; and adjusts the etching scanning speed of the laser equipment in real time through the adjustment coefficient. The present invention accurately controls the balance between thermal effect and processing quality by dynamically adjusting the etching scanning speed of the laser beam, taking into account both processing efficiency and path shape consistency.

Description

Technical Field

[0001] The present invention relates to the technical field of chip etching, and in particular to a method and a device for high-precision etching of the surface of a photoelectric chip. Background Art

[0002] As an important part of modern optoelectronic technology, optoelectronic chips are widely used in optical communications, optical sensing, laser processing, medical imaging, consumer electronics and other fields. With the rapid development of science and technology, higher requirements are placed on the performance and reliability of optoelectronic chips. In the manufacturing process of optoelectronic chips, surface etching is one of the key processes. Through etching technology, the surface material or structure of the chip can be accurately removed to form the required optical or electrical functional microstructure. Optoelectronic chips refer to chips that can convert electrical signals into optical signals or convert optical signals into electrical signals. Vertical-Cavity Surface-Emitting Laser (VCSEL), as a light-emitting optoelectronic chip, is a key component in optical communication systems.

[0003] During the laser etching process of optoelectronic chips, the corner positions in the etching path become important areas that affect processing quality and heat loss due to the complexity of geometric characteristics and thermal effects. The corner positions are usually areas where the direction of the laser path changes suddenly. At the corner positions, since the path turning is usually accompanied by an increase in laser scanning time, excessive laser energy input may cause local heat accumulation, thereby causing phenomena such as melting, ablation or excessive removal of materials, increasing the risk of heat loss, and may lead to insufficient etching depth or shape deviation at the corner positions, thus affecting the overall processing quality consistency. Summary of the invention

[0004] In order to solve the technical problem of low consistency in processing quality during the process of photoelectric chips, the purpose of the present invention is to provide a method and device for high-precision etching of the surface of photoelectric chips. The technical solution adopted is as follows:

[0005] In a first aspect, an embodiment of the present invention provides a method for high-precision etching of a surface of an optoelectronic chip, the method comprising:

[0006] Obtain the etching path and energy scattering rate of the laser beam during the etching process on the surface of the optoelectronic chip;

[0007] According to the line features of the etching profile corresponding to the corner point in the etching path, the local heat accumulation risk value of the corresponding corner point is determined; the response relationship between the angle change between different corner points, the energy scattering rate and the local heat accumulation risk value is analyzed to determine the laser response relationship value;

[0008] Determine the scanning oscillation risk value of oscillation generated at the corner position according to the attenuation of the etching scanning speed of the laser beam; introduce a dynamic error based on the scanning oscillation risk value to determine the heat loss probability of the laser beam characteristics;

[0009] In combination with the laser response relationship value and the heat loss probability, an adjustment coefficient for the laser beam characteristics when etching to different corner points is determined; and the etching scanning speed of the laser device is adjusted in real time through the adjustment coefficient.

[0010] Furthermore, the method for obtaining the energy scattering rate is:

[0011] For the etching process of the optoelectronic chip surface, the pump power fluctuation value is determined according to the change of the pump power at different acquisition times;

[0012] According to the continuous change of scattered light power at different acquisition moments, the total energy of scattered light is obtained; according to the continuous change of incident light power at different acquisition moments, the total energy of incident light is obtained;

[0013] The ratio of the total energy of the scattered light to the total energy of the incident light is taken as the initial scattering rate of the laser beam;

[0014] The initial scattering rate is adjusted according to the pump power fluctuation value to obtain the energy scattering rate of the laser beam.

[0015] Furthermore, the method for obtaining the etching profile corresponding to the corner point in the etching path is:

[0016] The lines in the etching path intersecting the corner point are used as etching profiles corresponding to the corner point, wherein the corner point is used as a dividing point between different etching profiles.

[0017] Furthermore, the determining of the local heat accumulation risk value of the corresponding corner point according to the line features of the etching profile corresponding to the corner point in the etching path includes:

[0018] For any corner point, the slope value at each position of the etching profile corresponding to the corner point is extracted, and the variance of the slope value at each position of the etching profile is used as the local heat accumulation risk value.

[0019] Further, the analyzing the response relationship between the angle change between different corner points, the energy scattering rate and the local heat accumulation risk value to determine the laser response relationship value includes:

[0020] According to the order of the angles corresponding to the corner points from large to small, the energy scattering rates of different corner points are fitted to obtain an energy scattering rate curve, and the angle values ​​of different corner points are fitted to obtain a first angle curve;

[0021] According to the position sequence of the corner points during etching, the angle values ​​of different corner points are fitted to obtain a second angle curve; the local heat accumulation risk values ​​of different corner points are fitted to obtain a local heat accumulation risk curve;

[0022] Obtaining a first response relationship value according to a change relationship between the energy scattering rate curve and the first angle curve;

[0023] obtaining a second response relationship value according to a response relationship between the second angle curve and the local heat accumulation risk curve;

[0024] The first response relationship value and the second response relationship value are combined to obtain a laser response relationship value; wherein the first response relationship value is positively correlated with the laser response relationship value, and the second response relationship value is negatively correlated with the laser response relationship value.

[0025] Further, obtaining a second response relationship value according to the response relationship between the second angle curve and the local heat accumulation risk curve includes:

[0026] Standardizing the second angle curve and the local heat accumulation risk curve respectively;

[0027] The mean square error between the standardized second angle curve and the local heat accumulation risk curve was calculated as the second response relationship value.

[0028] Further, the step of determining the scanning oscillation risk value of oscillation generated at the corner point position according to the attenuation of the etching scanning speed of the laser beam includes:

[0029] The path between the current corner point and the previous corner point in the etching path is taken as the path between the corner points, and the scanning speed of the laser beam on the path between the corner points is obtained; and a scanning speed curve corresponding to the scanning speed is obtained by fitting in time sequence;

[0030] The acceleration at each moment in the scanning speed curve is obtained, and the position at the corresponding moment of the minimum acceleration is taken as the attenuation node; the distance between the attenuation node and the corresponding corner point is taken as the scanning oscillation risk value.

[0031] Furthermore, the step of introducing a dynamic error based on the scanning oscillation risk value to determine the heat loss probability of the laser beam characteristic includes:

[0032] The scanning oscillation risk value is subjected to negative correlation mapping processing, and the negative correlation mapping value is weighted with the dynamic error as a weight to obtain the heat loss probability of the laser beam characteristic for heat loss.

[0033] Furthermore, the combining of the laser response relationship value and the heat loss probability to determine the adjustment coefficient of the laser beam characteristics when etching to different corner points includes:

[0034] Calculate the average value of heat loss probability of different types of corner points, and negatively map the average value to obtain the thermal effect risk;

[0035] Calculate the average value of the laser response relationship values ​​of different types of corner points as the laser response average value;

[0036] For each type of corner point, the normalized value of the laser response average value and the Euclidean norm of the thermal effect risk is calculated as an adjustment coefficient for determining the laser beam characteristics when etching to different types of corner points.

[0037] In a second aspect, a device for high-precision etching of a photoelectric chip surface is provided, the device comprising the following modules:

[0038] A data acquisition module is used to obtain the etching path and energy scattering rate of the laser beam during the etching process of the optoelectronic chip surface;

[0039] The path analysis module is used to determine the local heat accumulation risk value of the corresponding corner point according to the line characteristics of the etching profile corresponding to the corner point in the etching path; analyze the response relationship between the angle change between different corner points, the energy scattering rate and the local heat accumulation risk value, and determine the laser response relationship value;

[0040] An oscillation analysis module is used to determine a scanning oscillation risk value of oscillation generated at a corner point position according to the attenuation of the etching scanning speed of the laser beam; introduce a dynamic error based on the scanning oscillation risk value to determine the heat loss probability of the laser beam characteristics;

[0041] The etching adjustment module is used to determine the adjustment coefficient of the laser beam characteristics when etching to different corner points in combination with the laser response relationship value and the heat loss probability; and the etching scanning speed of the laser device is adjusted in real time through the adjustment coefficient.

[0042] In a third aspect, an embodiment of the present invention provides an electronic device, including a memory and a processor, wherein the memory stores executable code, and when the processor executes the executable code, various possible embodiments of the first aspect are implemented.

[0043] In a fourth aspect, an embodiment of the present invention provides a computer program product, which includes: a computer program code, which, when executed on a computer, enables the computer to execute the method in the first aspect or any possible implementation of the first aspect.

[0044] In a fifth aspect, an embodiment of the present invention provides a computer-readable storage medium having a computer program stored thereon, which, when executed in a computer, enables the computer to execute various possible implementations of the first aspect.

[0045] The embodiments of the present invention have at least the following beneficial effects:

[0046] The present invention obtains the energy scattering rate of the laser beam in the process of etching the surface of the optoelectronic chip according to the etching experiment of the optoelectronic chip; then analyzes the response relationship between the scanning state of the laser beam and the local accumulation state through the relationship between the intersection angle and the scattering rate and the characteristics of the etching profile, wherein the characteristics of the etching profile are reflected by the local heat accumulation risk value of the corner point; then, according to the difference in etching scanning speed during the etching process, the scanning oscillation risk value of the oscillation generated at the corner point position is determined to reflect the scanning dwell time of the laser beam, and the risk probability of heat loss of the scanning state is calculated through the scanning oscillation risk value and the dynamic error to obtain the heat loss probability; finally, the beam characteristics of the laser beam are dynamically adjusted by balancing the relationship between the response demand and the heat loss risk, and the etching scanning speed of the laser beam is dynamically adjusted to accurately control the balance between the thermal effect and the processing quality, thereby avoiding the heat loss risk caused by excessive dwelling or power input, and taking into account the processing efficiency and the consistency of the path shape. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions and advantages in the embodiments of the present invention or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0048] Figure 1 A method flow chart of a method for high-precision etching of a photoelectric chip surface provided by one embodiment of the present invention;

[0049] Figure 2 A flow chart of a method for obtaining energy scattering rate provided by one embodiment of the present invention;

[0050] Figure 3 A module diagram of a high-precision etching device for the surface of an optoelectronic chip provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0051] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined purpose of the invention, the specific implementation method, structure, characteristics and effects of a high-precision etching method and device for the surface of an optoelectronic chip proposed in accordance with the present invention are described in detail below in combination with the accompanying drawings and preferred embodiments.

[0052] In the following description, different "one embodiment" or "another embodiment" do not necessarily refer to the same embodiment. In addition, specific features, structures or characteristics in one or more embodiments may be combined in any suitable form.

[0053] Among them, in the description of the embodiments of the present invention, unless otherwise specified, " / " means or, for example, A / B can mean A or B: "and / or" in the text is only a way to describe the association relationship of associated objects, indicating that there can be three relationships, for example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. In addition, in the description of the embodiments of the present invention, "multiple" refers to two or more than two.

[0054] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as suggesting or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features.

[0055] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0056] The embodiments of the present invention are described below in conjunction with the accompanying drawings. Those skilled in the art will appreciate that, with the development of technology and the emergence of new scenarios, the technical solutions provided by the embodiments of the present invention are also applicable to similar technical problems.

[0057] The embodiment of the present invention provides a specific implementation method of a method and device for high-precision etching of the surface of an optoelectronic chip, which is suitable for laser etching scenarios. Laser etching is a method of locally heating the material on the surface of an optoelectronic chip by focusing a laser beam and evaporating or ablating the surface material. Laser etching is suitable for optoelectronic chip microstructures with high precision requirements, especially fine patterning in high topological charge vortex light emitting devices.

[0058] Vortex light with high topological charge has a specific phase structure, and its central area usually has a phase singularity, forming a so-called "beam vortex" shape. This beam structure requires maintaining its precise geometric shape during the etching process on the chip surface to avoid destroying its topological properties.

[0059] Use the power meter and the feedback control system of the laser system to monitor laser parameter data such as laser output power, pulse width, laser wavelength, etc. in real time.

[0060] The roughness of the etched surface was measured using an atomic force microscope (AFM) or a scanning electron microscope (SEM).

[0061] The dimensions of the microstructure after etching on the surface of the optoelectronic chip, including depth, width, and shape, are measured by SEM or white light interferometry to ensure that the microstructure of the optoelectronic chip meets the design requirements.

[0062] The width and depth of the heat affected zone generated during the etching process are detected by Raman spectroscopy analysis or infrared thermal imaging technology.

[0063] Use an infrared thermal imager or thermocouple to monitor the temperature of the optoelectronic chip surface in real time during the etching process to avoid uneven etching or damage caused by overheating.

[0064] The specific scheme of a method and device for high-precision etching of the surface of an optoelectronic chip provided by the present invention is described in detail below with reference to the accompanying drawings.

[0065] See also Figure 1 , which shows a flow chart of a method for high-precision etching of a photoelectric chip surface provided by an embodiment of the present invention, the method comprising the following steps:

[0066] Step S100, obtaining the etching path and energy scattering rate of the laser beam during the etching process of the optoelectronic chip surface.

[0067] In the process of etching the surface of the optoelectronic chip, improper adjustment of the beam characteristics of the laser beam during the etching process will cause varying degrees of damage to the surface of the optoelectronic chip during the etching process. Therefore, it is necessary to construct an optoelectronic chip surface etching experiment and formulate a suitable adjustment plan for the laser beam characteristics through the experimental stage.

[0068] First, determine the experimental objectives of etching, such as etching depth, surface morphology, line width, etc.; then determine the control parameters, such as laser wavelength, scattered light power, incident light power, pump power and etching scanning speed.

[0069] Prepare the optoelectronic chip sample, use anhydrous ethanol or acetone to ultrasonically clean the surface of the optoelectronic chip to remove dust, oil and oxide layer; fix the optoelectronic chip on the platform of the laser etching equipment to ensure that the surface is flat and without shaking; use a vacuum adsorption table or optoelectronic glue to fix it to avoid errors caused by vibration during the etching process.

[0070] Use CAD software or CAM software to design the etching pattern, determine the etching path, and convert it into a G-code format compatible with the laser equipment; the etching pattern needs to meet various etching accuracy requirements.

[0071] The formation of laser etching equipment is mainly: first, the gain medium in the laser is excited by the pump source, the gain medium is such as solid, gas, liquid or semiconductor, and the pump source is such as electric current, flash lamp or another laser beam. The electron jumps from the ground state to a higher energy level; then when the excited state particle encounters a photon with the same energy difference as its energy level, it will emit a coherent photon, and the newly generated photon has the same phase, frequency and propagation direction as the original photon. In the laser cavity, the photon is reflected multiple times by the reflector, amplified in the gain medium, and forms a powerful light beam; then a part of the light is emitted through the coupling mirror to form the final laser beam, the coupling mirror is such as a half-reflecting mirror.

[0072] The main purpose of the present invention is to extract the particle excitation state of the laser beam during the etching process. Since the gain medium in the laser needs to be excited to a high energy level by external pumping, such as an electric current or another laser beam; if the particle excitation state cannot reach the expected level, it will cause uneven etching depth and width, and even lead to etching failure.

[0073] In the embodiment of the present invention, any etching stage in the etching experiment is selected as the analysis object, and for each single etching stage, it is set to collect the laser beam parameters in the etching process once every 2 seconds.

[0074] In the process of etching the surface of the optoelectronic chip using laser equipment, the emitted photons have the same phase, frequency and direction during the stimulated radiation of the particles, thus forming a highly coherent laser. If the particle excitation is uneven, it may cause the beam mode to deteriorate, such as changing from the fundamental mode to a higher-order mode or multi-mode; and the multi-mode state may cause the energy of the laser beam to scatter, which in turn leads to the inability to concentrate the energy.

[0075] The commonly used experimental methods for measuring the scattering state of laser beams are laser spot profile measurement, scattering angle distribution measurement, far-field light distribution measurement, etc. The accumulated energy scattering during the etching process is calculated based on time-resolved scattering measurement, so as to adjust and extract the energy scattering rate of the laser beam during the etching experiment.

[0076] First, the corresponding energy scattering rate is determined by the incident light power, scattered light power and pump power during the etching process of the optoelectronic chip surface; the fluctuation of the pump power of the laser beam is obtained, and the energy scattering rate of the laser beam at the current corner point is obtained by combining the accumulated energy scattering state at the corner point position. Please refer to Figure 2 That is, the above step S100 can be implemented by the following steps S110 to S140:

[0077] Step S110 , for the optoelectronic chip surface etching process, the pump power fluctuation value is determined according to the change of the pump power at different acquisition times.

[0078] Among them, the measurement of pump power can be achieved by measuring the output power of the pump light source in real time through a high-precision laser power meter. The greater the fluctuation of the pump power, the more obvious the scattering state of the laser beam in the actual etching process. Then, combined with the accumulated power in the etching process, the energy scattering rate of the laser beam in the etching process at the corresponding position at the current moment can be obtained.

[0079] In the embodiment of the present invention, the variation of the pump power is reflected by the variance of the pump power at different acquisition moments, and the variance is used as the pump power fluctuation value U.

[0080] In other embodiments of the present invention, the standard deviation of the pump power at different acquisition moments may also be used as the pump power fluctuation value.

[0081] Step S120, obtaining the total energy of the scattered light according to the continuous change of the scattered light power at different collection moments; obtaining the total energy of the incident light according to the continuous change of the incident light power at different collection moments.

[0082] The scattered light power at different acquisition times is integrated, and the obtained integral value is used as the total energy of the scattered light. The incident light power at different acquisition times is integrated, and the obtained integral value is used as the total energy of the incident light.

[0083] Step S130: taking the ratio of the total energy of the scattered light to the total energy of the incident light as the initial scattering rate of the laser beam.

[0084] Step S140, adjusting the initial scattering rate according to the pump power fluctuation value to obtain the energy scattering rate of the laser beam.

[0085] The pump power fluctuation value is used as a weight to weight the initial scattering rate to obtain the energy scattering rate of the laser beam. It can be understood that the product of the pump power and the initial scattering rate is used as the energy scattering rate of the laser beam.

[0086] The larger the value of the energy scattering rate, the more serious the scattering of the laser beam at the corresponding position during the etching process. The change of the energy scattering rate has a certain influence on the thermal damage during the etching process. In the process of laser equipment etching the surface of the optoelectronic chip, the energy scattering of the laser beam may cause local heat accumulation in the non-target area and produce thermal effects, further affecting the contour deformation of the etched pattern or causing ablation.

[0087] In some embodiments, the energy scattering rate of the laser beam at the current acquisition time is calculated as follows: ;in, is; U is the pump power fluctuation value; The scattered light power at the current acquisition moment; is the incident light power at the current acquisition moment; is the total energy of scattered light at the current acquisition moment; is the total energy of the incident light at the current acquisition moment; T is the order value corresponding to the current acquisition moment.

[0088] Step S200, determining the local heat accumulation risk value of the corresponding corner point according to the line features of the etching profile corresponding to the corner point in the etching path; analyzing the response relationship between the angle change between different corner points, the energy scattering rate and the local heat accumulation risk value, and determining the laser response relationship value.

[0089] Observe the etching path during the etching process on the surface of the optoelectronic chip. By comparing etching paths of different shapes, the performance of the laser beam at different paths is analyzed to provide reliable data for subsequent adjustments.

[0090] In the experimental process of etching the surface of optoelectronic chips, in order to better extract the performance of the beam characteristics of the laser beam in different types of etching paths, it is necessary to focus on setting the complexity of the path in the etching pattern during the generation of the etching path, that is, different types of corner point positions need to be distributed in the etching pattern, so as to extract the performance of the laser beam at different types of corner point positions.

[0091] All corner points in the etching path of the etching process are obtained. Corner points can be understood as turning points when the etching path bends during the etching process. All corner points in the set etching path can be marked in advance; corner points can be divided into: obtuse corner points, right-angle corner points and acute corner points. Based on the angle of the corner point, the corner points are divided, where the angle of the corner point is the angle inside the etching path where the corner point is located. Corner points with an angle greater than 90° are divided into obtuse corner points, corner points with an angle less than 90° are divided into acute corner points, and angles equal to 90° are divided into right-angle corner points.

[0092] For the etching path in this etching process, if it is an etching pattern with a complex path, in order to avoid over-etching or under-etching, the equipment needs to dynamically adjust the scanning speed according to the actual etching path to ensure that the laser beam can maintain energy stability in areas where the path turns or changes sharply, thereby avoiding processing errors.

[0093] After the corner point is divided according to the size of the included angle, the lines in the etching path intersecting the corner point are used as etching profiles corresponding to the corner point, wherein the corner point is used as a dividing point between different etching profiles.

[0094] According to the line features of the etching profile corresponding to each corner point, the local heat accumulation risk value of the corresponding corner point is determined. Specifically: for any corner point, the slope values ​​at each position of the etching profile corresponding to the corner point are extracted, and the variance of the slope values ​​at each position of the etching profile is used as the local heat accumulation risk value. The variance of the slope value calculated here reflects the "sawtooth" feature of the etching profile.

[0095] During a single etching experiment, the angle values ​​of different corner points are fitted according to the position order of the corner points during etching, that is, according to the etching order, to obtain a second angle curve; the local heat accumulation risk values ​​of different corner points are fitted to obtain a local heat accumulation risk curve.

[0096] During this etching experiment, the energy scattering rate of different corner points is fitted according to the order of the angles corresponding to the corner points from large to small to obtain the energy scattering rate curve, and the angle values ​​of different corner points are fitted to obtain the first angle curve. The second angle curve is a curve with a continuous upward trend and close to linearity.

[0097] For the etching path of sharp corners, the laser beam of the laser equipment needs to quickly change the direction of the beam scanning during the scanning process; and in this etching path, the smaller the angle, the more likely it is that the incident laser density will be concentrated locally in the corner area, that is, the scattering intensity of the laser beam on the surface of the optoelectronic chip will change significantly, which will aggravate the local temperature increase at the corner position, and further damage the etching pattern.

[0098] Furthermore, according to the change relationship between the energy scattering rate curve and the first angle curve, a first response relationship value is obtained. In the embodiment of the present invention, the mean of the slopes corresponding to each point in the energy scattering rate curve is calculated and recorded as the first mean; the mean of the slopes corresponding to each point in the first angle curve is calculated and recorded as the second mean; the difference between the first mean and the second mean, that is, the absolute value of the difference, is taken as the first response relationship value.

[0099] The first response relationship value represents the response relationship between the angle change of the corner point position in the etching path and the scattering rate of the laser beam. Under normal circumstances, the larger the angle value of the etching path, the lower the scattering rate of the laser beam should be, because during the movement of the beam scanning, the movement trajectory is smoother, that is, the possibility of local concentration of the incident laser density during the movement is small.

[0100] According to the response relationship between the second angle curve and the local heat accumulation risk curve, a second response relationship value is obtained. In an embodiment of the present invention, the second angle curve and the local heat accumulation risk curve are standardized respectively; and the mean square error of the standardized second angle curve and the local heat accumulation risk curve is calculated as the second response relationship value.

[0101] The second response relationship value represents the changing relationship between the edge characteristics of the etching pattern and the angle. The smaller the value of the mean square error is, the smaller the edge characteristics of the etching pattern are. It should be noted that in the process of calculating the mean square error, the ordinates of the second angle curve and the local heat accumulation risk curve need to be normalized or standardized, and the mean square error is calculated after the dimensions are unified.

[0102] The first response relationship value and the second response relationship value are combined to obtain a laser response relationship value; wherein the first response relationship value is positively correlated with the laser response relationship value, and the second response relationship value is negatively correlated with the laser response relationship value. More specifically, the ratio of the first response relationship value to the second response relationship value is used as the laser response relationship value.

[0103] The larger the laser response relationship value is, the more the scanning state of the laser beam changes with the transformation of the etching path, which in turn affects the scattering state of the laser beam.

[0104] In some embodiments, the calculation formula of the laser response relationship value A is: ; MSE is the mean square error calculation function; E is the standardized local heat accumulation risk curve; R is the standardized second angle curve; is the mean of the slopes corresponding to each point in the energy scattering rate curve, which is also the first mean; is the mean of the slopes corresponding to each point in the first angle curve, which is also the second mean; is the absolute value function.

[0105] Step S300, determining a scanning oscillation risk value of oscillation at a corner point according to the attenuation of the etching scanning speed of the laser beam; introducing a dynamic error based on the scanning oscillation risk value to determine the heat loss probability of the laser beam characteristic.

[0106] Under the higher response relationship model, when the laser beam scans to the corner position of the sharp angle, it is necessary to properly adjust the scanning speed of the beam to effectively reduce the incomplete etching caused by too fast speed; that is, for the etching path of the sharp corner or small radius curve, it is necessary to increase the scanning time of the laser beam at this position to ensure the consistency of the etching depth. If the scanning time of the laser beam is increased at the sharp corner, the thermal effect will be aggravated under the state of laser energy concentration, which may lead to over-etching and thermal damage.

[0107] In the etching experiment stage, the path between the current etching corner point and the previous etching corner point is marked and measured, and the path between the current corner point and the previous corner point in the etching path is used as the path between corner points. The scanning speed curve of the laser beam in this path is obtained over time, that is, the scanning speed curve corresponding to the scanning speed is fitted according to the time sequence. In theory, the scanning speed curve has a decay trend.

[0108] The rate of change of the scanning speed with respect to time is deduced based on the relationship between the change of the scanning speed and time, that is, the deceleration fitting curve in the path is obtained, and the corresponding position of the time node where the minimum deceleration value in the deceleration fitting curve is located is used as the attenuation node. The attenuation node reflects that the scanning speed of the laser beam starts to attenuate and reaches a peak value at the position of the attenuation node, that is, the position point when the scanning speed attenuation rate reaches the peak value is recorded as the attenuation node and marked on the etching path. The deceleration here is a negative acceleration, which is the minimum deceleration value and can also be understood as the minimum acceleration. Therefore, the acceleration at each moment in the scanning speed curve is obtained, and the position at the corresponding moment of the minimum acceleration is used as the attenuation node. The distance between the attenuation node and the corresponding corner point is used as the scanning oscillation risk value. It should be noted that the distance between the two points here is the number of acquisition moments between the two points.

[0109] The larger the distance between the attenuation node and the corresponding corner point, the more it indicates that the laser beam has decayed to a certain extent before scanning to the corner point, and the attenuated speed is not likely to cause laser beam oscillation when scanning through the corner point, thereby reducing the risk of thermal damage at the corner point. When the distance between the attenuation node and the corresponding corner point is too short, local heat accumulation will occur when passing through the corner point.

[0110] After determining the scanning oscillation risk value, in the actual etching process, even if some corner points have the same angle, the loss risk caused by scanning with the same laser beam characteristics is not necessarily exactly the same, because the heat loss situation is also affected by a series of dynamic factors in the experiment, such as material properties, etching environment, and the movement stability of the laser equipment, which leads to a lack of credibility in the assessment of thermal damage risk.

[0111] During multiple etching experiments, the corner points with the same angle are marked, and then the etching depth value is measured each time the corner point is etched. Then there is a set of difference values ​​D between any two etching depths. The average of the difference values ​​of the etching depth of the intersection during all etching experiments is calculated as the dynamic error. .

[0112] Dynamic error is introduced based on the scanning oscillation risk value to determine the heat loss probability of the laser beam characteristics.

[0113] Specifically: a negative correlation mapping process is performed on the scanning oscillation risk value, and the dynamic error is used as a weight to weight the negative correlation mapping value to obtain the heat loss probability of the laser beam characteristic for heat loss. In another embodiment of the present invention, the sum of the dynamic error and the non-zero constant can also be used as a weight to weight the negative correlation mapping value to obtain the heat loss probability of the laser beam characteristic for heat loss. The non-zero constant is introduced to avoid the situation where the dynamic error appears to be 0 and affects the calculation result. Therefore, the logic is corrected by introducing a non-zero constant, wherein the value of the non-zero constant is 0-1. In the embodiment of the present invention, the value of the non-zero constant can be 0.01. In other embodiments, it can also be adjusted by the implementer according to other actual conditions.

[0114] The heat loss probability of heat loss indicates the probability value of heat loss caused by the characteristics of the laser beam during the etching process. That is, the greater the heat loss probability, the faster the laser beam slows down at a position closer to the corner point. A speed reduction over a short distance means a higher speed attenuation rate. This will easily lead to oscillation risks during the scanning process at the position corresponding to the corner point, resulting in poor local etching quality. That is, the higher the heat loss probability of the laser beam characteristic, the greater the force with which the scanning speed needs to be adjusted in the direction of decreasing for the laser beam moving to the corner point.

[0115] The scanning time at the corner point position is increased to ensure the consistency of the etching depth, but the scanning time cannot be made too long to increase the influence of thermal effects on the etching depth. That is, it is necessary to balance the relationship between the response to the scanning speed and the scanning oscillation at the corner point position.

[0116] In some embodiments, the heat loss probability F of the laser beam characteristic is calculated as: ; Where L is the scanning shock risk value; is the dynamic error; is a non-zero constant.

[0117] Step S400, combining the laser response relationship value and the heat loss probability, determining the adjustment coefficient of the laser beam characteristics when etching to different corner points; and adjusting the etching scanning speed of the laser device in real time through the adjustment coefficient.

[0118] Finally, the beam characteristics of the laser beam when it scans to the corner point are pre-adjusted, and the influence of the beam characteristics on the heat loss is balanced. Then, the beam characteristics of the laser beam before reaching the corner point are dynamically adjusted during the etching process based on the balanced results, thereby ensuring the consistency of the etching depth while reducing the possibility of etching damage caused by local overheating on the optoelectronic chip.

[0119] First, the laser response relationship value and the heat loss probability are combined to determine the adjustment coefficient of the laser beam characteristics when etching to different corner points. The laser response relationship value and the heat loss probability are combined to obtain a balance between the corresponding requirements of the laser beam scanning state and the laser beam dwelling time, that is, to output a balanced indicator, so as to meet the timely adjustment response to the laser beam scanning state while reducing the risk of thermal effects caused by excessive beam dwelling time.

[0120] The method for determining the adjustment coefficient is specific: calculate the average value of the heat loss probability of different types of corner points, and perform negative correlation mapping on the average value to obtain the thermal effect risk; calculate the average value of the laser response relationship values ​​of different types of corner points as the laser response average value; for each type of corner point, calculate the normalized value of the Euclidean norm of the laser response average value and the thermal effect risk as the adjustment coefficient for etching to different types of corner points.

[0121] In some embodiments, the adjustment coefficient of the laser beam characteristics based on the i-th type of corner point is The calculation formula is: ;in, is the average value of the laser response relationship value of the i-th type corner point, that is, the average value of the laser response of the i-th type corner point; is the average value of the heat loss probability of the i-th type of corner point; is the thermal effect risk of the i-th type of corner point; norm is the linear normalization function.

[0122] By obtaining the adjustment coefficient of the laser beam characteristics when the laser device moves to the current corner point position during the photoelectric chip etching process, and then taking the product of the etching scanning speed set in the laser device and the adjustment coefficient as the adjusted scanning speed, the real-time adaptive adjustment of the etching scanning speed of the laser device is achieved;

[0123] As a preferred embodiment of the present invention, the ratio of the reduced etching scanning speed to the original etching scanning speed and the original pump power value are multiplied to obtain the pump power of the pump source of the laser beam at the corner point position corresponding to the current etching;

[0124] By dynamically adjusting the pump power and scanning speed of the laser beam during the etching process, the beam characteristics of the laser beam can be effectively changed, so that during the etching process, especially during the etching process at the corner position, the accuracy requirements of the etching depth can be ensured while effectively reducing the risk of thermal damage during the beam processing, thereby optimizing the balance between processing efficiency and quality.

[0125] See also Figure 3 , which shows a module diagram of a device for high-precision etching of a photoelectric chip surface provided by an embodiment of the present invention, the device includes the following modules:

[0126] A data acquisition module is used to obtain the etching path and energy scattering rate of the laser beam during the etching process of the optoelectronic chip surface;

[0127] The path analysis module is used to determine the local heat accumulation risk value of the corresponding corner point according to the line characteristics of the etching profile corresponding to the corner point in the etching path; analyze the response relationship between the angle change between different corner points, the energy scattering rate and the local heat accumulation risk value, and determine the laser response relationship value;

[0128] An oscillation analysis module is used to determine a scanning oscillation risk value of oscillation generated at a corner point position according to the attenuation of the etching scanning speed of the laser beam; introduce a dynamic error based on the scanning oscillation risk value to determine the heat loss probability of the laser beam characteristics;

[0129] The etching adjustment module is used to determine the adjustment coefficient of the laser beam characteristics when etching to different corner points in combination with the laser response relationship value and the heat loss probability; and the etching scanning speed of the laser device is adjusted in real time through the adjustment coefficient.

[0130] Optionally, the transmission medium may be a wired link, such as but not limited to coaxial cable, optical fiber, and digital subscriber line, or a wireless link, such as but not limited to Wireless Fidelity (WIFI), Bluetooth, and mobile device network.

[0131] It should be noted that the device provided in the above embodiment is only illustrated by the division of the above functional modules. In actual applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the computer device can be divided into different functional modules to complete all or part of the functions described above.

[0132] A schematic diagram of the structure of a computer device provided in an embodiment of the present invention. Exemplarily, the computer device includes: a memory, a processor, and a computer program stored in the memory and running on the processor, wherein when the processor executes the computer program, the computer device can execute any one of the above-mentioned high-precision etching methods for the surface of an optoelectronic chip.

[0133] In addition, an embodiment of the present invention protects a device, which may include a memory and a processor, wherein the memory stores executable program code, and the processor is used to call and execute the executable program code to execute a high-precision etching method for the surface of an optoelectronic chip provided by an embodiment of the present invention.

[0134] The embodiment of the present invention can divide the functional modules of the device according to the above method example. For example, each functional module can be corresponded, or two or more functions can be integrated into one processing module. The above integrated module can be implemented in the form of hardware. It should be noted that the division of modules in this embodiment is schematic and is only a logical function division. There may be other division methods in actual implementation.

[0135] In the case of dividing each module according to each function, the device may also include a signal uploading module, a determining module, an adjusting module, etc. It should be noted that all relevant contents of each step involved in the above method embodiment can be referred to the functional description of the corresponding functional module, which will not be repeated here.

[0136] It should be understood that the device provided in the embodiment of the present invention is used to execute the above-mentioned high-precision etching method for the surface of an optoelectronic chip, and thus can achieve the same effect as the above-mentioned implementation method.

[0137] In the case of an integrated unit, the device may include a processing module and a storage module. When the device is applied to a device, the processing module may be used to control and manage the actions of the device. The storage module may be used to support the device to execute mutual program codes, etc. The processing module may be a processor or a controller, which may implement or execute various exemplary logic blocks, modules and circuits described in conjunction with the disclosure of the present invention. The processor may also be a combination that implements a computing function, such as a combination of one or more microprocessors, a combination of digital signal processing (DSP) and a microprocessor, etc. The storage module may be a memory.

[0138] In addition, the device provided in an embodiment of the present invention may specifically be a chip, a component or a module, and the chip may include a connected processor and a memory; wherein the memory is used to store instructions, and when the processor calls and executes the instructions, the chip can execute a high-precision etching method for the surface of an optoelectronic chip provided in the above embodiment.

[0139] An embodiment of the present invention also provides a computer-readable storage medium, which stores computer program code. When the computer program code runs on a computer, the computer executes the above-mentioned related method steps to implement a high-precision etching method for the surface of an optoelectronic chip provided in the above embodiment.

[0140] An embodiment of the present invention further provides a computer program product. When the computer program product is run on a computer, the computer is enabled to execute the above-mentioned related steps to implement a high-precision etching method for the surface of an optoelectronic chip provided in the above embodiment.

[0141] Among them, the device, computer-readable storage medium, computer program product or chip provided in the embodiments of the present invention are all used to execute the corresponding methods provided above. Therefore, the beneficial effects that can be achieved can refer to the beneficial effects in the corresponding methods provided above, and will not be repeated here. Through the description of the above implementation methods, technicians in the relevant field can understand that for the convenience and simplicity of description, only the division of the above-mentioned functional modules is used as an example. In actual applications, the above-mentioned functions can be assigned to different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. In the embodiments provided by the present invention, it should be understood that the disclosed devices and methods can be implemented in other ways.

[0142] The device embodiments described above are merely illustrative. For example, the division of modules or units is only a logical function division. There may be other divisions in actual implementation. For example, multiple units or components may be combined or integrated into another device, or some features may be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed may be through some interfaces, indirect coupling or communication connection of devices or units, which may be electrical, mechanical or other forms.

[0143] It should also be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0144] It should be noted that the sequence of the above embodiments of the present invention is for description only and does not represent the advantages and disadvantages of the embodiments. The processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0145] The various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referenced to each other, and each embodiment focuses on the differences from other embodiments.

[0146] The above contents are only specific implementation modes of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be covered within the protection scope of the present invention.

Claims

1. A high-precision etching method for the surface of an optoelectronic chip, characterized in that: The method comprises the following steps: Obtain the etching path and energy scattering rate of the laser beam during the etching process on the surface of the optoelectronic chip; According to the line features of the etching profile corresponding to the corner point in the etching path, the local heat accumulation risk value of the corresponding corner point is determined; the response relationship between the angle change between different corner points, the energy scattering rate and the local heat accumulation risk value is analyzed to determine the laser response relationship value; Determine the scanning oscillation risk value of oscillation generated at the corner position according to the attenuation of the etching scanning speed of the laser beam; introduce a dynamic error based on the scanning oscillation risk value to determine the heat loss probability of the laser beam characteristics; In combination with the laser response relationship value and the heat loss probability, an adjustment coefficient for the laser beam characteristics when etching to different corner points is determined; and the etching scanning speed of the laser device is adjusted in real time through the adjustment coefficient; Among them, the method for determining the laser response relationship value is: according to the order of the angles corresponding to the corner points from large to small, the energy scattering rates of different corner points are fitted to obtain an energy scattering rate curve, and the angle values ​​of different corner points are fitted to obtain a first angle curve; according to the position order of the corner points during etching, the angle values ​​of different corner points are fitted to obtain a second angle curve; the local heat accumulation risk values ​​of different corner points are fitted to obtain a local heat accumulation risk curve; according to the change relationship between the energy scattering rate curve and the first angle curve, a first response relationship value is obtained; according to the response relationship between the second angle curve and the local heat accumulation risk curve, a second response relationship value is obtained; combining the first response relationship value and the second response relationship value, a laser response relationship value is obtained; wherein, the first response relationship value is positively correlated with the laser response relationship value, and the second response relationship value is negatively correlated with the laser response relationship value.

2. The method for high-precision etching of the surface of an optoelectronic chip according to claim 1, characterized in that: The method for obtaining the energy scattering rate is: For the etching process of the optoelectronic chip surface, the pump power fluctuation value is determined according to the change of the pump power at different acquisition times; According to the continuous change of scattered light power at different acquisition moments, the total energy of scattered light is obtained; according to the continuous change of incident light power at different acquisition moments, the total energy of incident light is obtained; The ratio of the total energy of the scattered light to the total energy of the incident light is taken as the initial scattering rate of the laser beam; The initial scattering rate is adjusted according to the pump power fluctuation value to obtain the energy scattering rate of the laser beam.

3. The method for high-precision etching of the surface of an optoelectronic chip according to claim 1, characterized in that: The method for obtaining the etching profile corresponding to the corner point in the etching path is: The lines in the etching path intersecting the corner point are used as etching profiles corresponding to the corner point, wherein the corner point is used as a dividing point between different etching profiles.

4. The method for high-precision etching of the surface of an optoelectronic chip according to claim 1, characterized in that: The determining of the local heat accumulation risk value of the corresponding corner point according to the line features of the etching profile corresponding to the corner point in the etching path includes: For any corner point, the slope value at each position of the etching profile corresponding to the corner point is extracted, and the variance of the slope value at each position of the etching profile is used as the local heat accumulation risk value.

5. The method for high-precision etching of the surface of an optoelectronic chip according to claim 1, characterized in that: The obtaining a second response relationship value according to the response relationship between the second angle curve and the local heat accumulation risk curve comprises: Standardizing the second angle curve and the local heat accumulation risk curve respectively; The mean square error between the standardized second angle curve and the local heat accumulation risk curve was calculated as the second response relationship value.

6. The method for high-precision etching of the surface of an optoelectronic chip according to claim 1, characterized in that: The step of determining the scanning oscillation risk value of oscillation generated at the corner point position according to the attenuation of the etching scanning speed of the laser beam includes: The path between the current corner point and the previous corner point in the etching path is taken as the path between the corner points, and the scanning speed of the laser beam on the path between the corner points is obtained; and a scanning speed curve corresponding to the scanning speed is obtained by fitting in time sequence; The acceleration at each moment in the scanning speed curve is obtained, and the position at the corresponding moment of the minimum acceleration is taken as the attenuation node; the distance between the attenuation node and the corresponding corner point is taken as the scanning oscillation risk value.

7. The method for high-precision etching of the surface of an optoelectronic chip according to claim 1, characterized in that: The step of introducing a dynamic error based on the scanning oscillation risk value to determine the heat loss probability of the laser beam characteristic includes: The scanning oscillation risk value is subjected to negative correlation mapping processing, and the negative correlation mapping value is weighted with the dynamic error as a weight to obtain the heat loss probability of the laser beam characteristic for heat loss.

8. The method for high-precision etching of the surface of an optoelectronic chip according to claim 1, characterized in that: The step of combining the laser response relationship value and the heat loss probability to determine the adjustment coefficient of the laser beam characteristics when etching to different corner points includes: Calculate the average value of heat loss probability of different types of corner points, and negatively map the average value to obtain the thermal effect risk; Calculate the average value of the laser response relationship values ​​of different types of corner points as the laser response average value; For each type of corner point, the normalized value of the laser response average value and the Euclidean norm of the thermal effect risk is calculated as an adjustment coefficient for determining the laser beam characteristics when etching to different types of corner points.

9. A high-precision etching device for the surface of an optoelectronic chip, characterized in that: The device is used to implement a high-precision etching method for the surface of an optoelectronic chip according to any one of claims 1 to 8, and the device comprises the following modules: A data acquisition module is used to obtain the etching path and energy scattering rate of the laser beam during the etching process of the optoelectronic chip surface; A path analysis module is used to determine the local heat accumulation risk value of the corresponding corner point according to the line characteristics of the etching profile corresponding to the corner point in the etching path; Analyze the response relationship between the angle change between different corner points, the energy scattering rate and the local heat accumulation risk value, and determine the laser response relationship value; An oscillation analysis module is used to determine a scanning oscillation risk value of oscillation generated at a corner point position according to the attenuation of the etching scanning speed of the laser beam; introduce a dynamic error based on the scanning oscillation risk value to determine the heat loss probability of the laser beam characteristics; The etching adjustment module is used to determine the adjustment coefficient of the laser beam characteristics when etching to different corner points in combination with the laser response relationship value and the heat loss probability; and the etching scanning speed of the laser device is adjusted in real time through the adjustment coefficient.

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