Manufacturing device and manufacturing method of pipeline heater and semiconductor equipment

Abstract

The invention discloses a preparation device of a pipeline heater, a preparation method of the pipeline heater and semiconductor equipment. The preparation device comprises a baking cavity for performing vacuum baking on the pipeline heater which is placed in the baking cavity and made of silica gel foam; and the gas source is used for providing purging gas for the baking cavity at regular time so as to purge precipitates of the pipeline heater. Through the preparation device of the pipeline heater, the working temperature of the pipeline heater prepared by silica gel foaming can be increased, and meanwhile, the granularity in the process environment of semiconductor equipment can be ensured to meet the standard of a hundred-grade clean room.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a preparation device for a pipeline heater, a preparation method for a pipeline heater, a semiconductor device, and a computer-readable storage medium. Background Art

[0002] The pipe heater is a core component used to accurately control the gas path temperature in thin film deposition equipment. As the process requirements of thin film deposition technology become more sophisticated, the requirements for gas path temperature are also getting higher and higher.

[0003] Since silicone foam pipe heaters have obvious advantages over other materials in terms of fit, thermal conductivity, and temperature uniformity, silicone foam heaters are usually used as pipe heaters. However, excessively high gas path temperatures can cause a sharp increase in the number of volatilized particles in silicone foam pipe heaters, and can even cause excessive volatilization of particles in silicone foam pipe heaters. After the particles in the pipe enter the reaction chamber with the precursor, they will pollute the process environment in the reaction chamber, which has a very negative impact on the thin film deposition process.

[0004] At present, in order to reduce the number of particles volatilized by silicone foam pipe heaters when transmitting high-temperature precursors, high-temperature baking is often used to reduce the volatilization of particles during the use of silicone foam pipe heaters. However, when the pipe heater is used at a temperature of 160℃~180℃, a large amount of particles will still volatilize, causing the process environment in the reaction chamber of the machine to fail to meet the Class 100 clean room standards, thus leading to customer complaints.

[0005] In order to solve the above problems existing in the prior art, the art urgently needs a preparation technology for a pipe heater that can improve the working temperature of the pipe heater made of silicone foam and at the same time ensure that the particle size in the process environment of the semiconductor equipment meets the Class 100 clean room standard. Summary of the invention

[0006] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0007] In order to overcome the above-mentioned defects of the prior art, the present invention provides a preparation device for a pipe heater, a preparation method for a pipe heater, a semiconductor device, and a computer-readable storage medium, which can improve the working temperature of the pipe heater made of silicone foam and at the same time ensure that the particle size in the process environment of the semiconductor device meets the Class 100 clean room standard.

[0008] Specifically, the preparation device of the above-mentioned pipe heater provided according to the first aspect of the present invention includes: a baking cavity for vacuum baking the silicone foamed pipe heater placed therein; and a gas source for regularly providing purge gas into the baking cavity to purge the precipitates of the pipe heater.

[0009] Furthermore, in some embodiments of the present invention, the target temperature of the vacuum baking is above 180° C., and the corresponding vacuum pressure value ranges from 4 to 6 Pa.

[0010] Furthermore, in some embodiments of the present invention, the duct heater in the baking cavity does not contact the inner surface of the baking cavity.

[0011] Furthermore, in some embodiments of the present invention, the preparation device includes: a heating paste attached to the outer wall of the baking cavity to keep the temperature of the outer wall above the condensation temperature of siloxane.

[0012] Furthermore, in some embodiments of the present invention, the preparation device includes: a first temperature controller and a second temperature controller, the first temperature controller is connected to the pipe heater and is used to detect the vacuum baking temperature of the pipe heater, and the second temperature controller is connected to the outer wall and is used to detect the temperature of the outer wall.

[0013] Furthermore, in some embodiments of the present invention, the preparation device includes: a vacuum pump and a vacuum gauge, both connected to the baking cavity, wherein the vacuum pump is used to draw the gas source in the baking cavity to a preset vacuum degree, and the vacuum gauge is used to detect the vacuum pressure in the baking cavity.

[0014] In addition, the preparation method of the above-mentioned pipe heater provided according to the second aspect of the present invention includes the following steps: placing a pipe heater made of silicone foam into a baking cavity of the preparation device of the above-mentioned pipe heater provided by the first aspect of the present invention; adjusting the vacuum pressure and vacuum temperature in the baking cavity to vacuum bake the pipe heater; providing purge gas into the baking cavity at a regular time via a gas source to purge the precipitates of the pipe heater; and obtaining the prepared pipe heater.

[0015] Furthermore, in some embodiments of the present invention, the preparation device also includes a heating sticker attached to the outer wall of the baking cavity, and the step of adjusting the pressure and temperature in the baking cavity to vacuum bake the pipe heater includes: adjusting the vacuum pressure in the baking cavity to 4-6 Pa, and adjusting the temperature of the pipe heater in the baking cavity so that its self-heating vacuum temperature reaches above 180°C, and maintaining the temperature of the outer wall above the condensation temperature of siloxane via the heating plate.

[0016] Further, in some embodiments of the present invention, the step of periodically providing a purge gas into the baking cavity via a gas source to purge the precipitates of the pipe heater includes: in response to every 30 minutes of vacuum baking in the baking cavity, providing nitrogen into the baking cavity via the gas source to purge the precipitates of the pipe heater.

[0017] Furthermore, in some embodiments of the present invention, the step of obtaining the prepared pipeline heater includes: in response to the pipeline heater being continuously vacuum-baked for 72 to 96 hours, obtaining the prepared pipeline heater.

[0018] In addition, the semiconductor device provided according to the third aspect of the present invention includes: a reaction chamber, the interior of which is used to perform a thin film deposition process; a front-stage pipeline, connecting a precursor source and the reaction chamber to transfer the precursor to the reaction chamber; and a pipe heater prepared by the preparation method of the pipe heater provided by the second aspect of the present invention, which is arranged in the front-stage pipeline and is used to raise the precursor to the process temperature during the transmission process.

[0019] In addition, according to the fourth aspect of the present invention, there is also provided a computer-readable storage medium on which computer instructions are stored. When the computer instructions are executed by a processor, the method for preparing the pipeline heater provided in the second aspect of the present invention is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0021] Figure 1 A schematic structural diagram of a preparation device for a pipeline heater according to some embodiments of the present invention is shown;

[0022] Figure 2 A schematic diagram showing component analysis of precipitates from a pipeline heater in a baking chamber during vacuum baking provided by some embodiments of the present invention is shown;

[0023] Figure 3 A flow chart showing a method for preparing a pipeline heater according to some embodiments of the present invention; and

[0024] Figure 4 The graph shows the test results of 0.1 um particles under different baking conditions provided by some embodiments of the present invention.

[0025] Reference numerals:

[0026] 100 Preparation device for pipeline heater;

[0027] 110 baking cavity;

[0028] 120 gas source;

[0029] 130 Heating patch;

[0030] 141 First Thermostat;

[0031] 142 Second thermostat;

[0032] 150 Vacuum pump;

[0033] 151 Vacuum gauge;

[0034] 160 duct heaters; and

[0035] Steps S310~S340. DETAILED DESCRIPTION

[0036] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0037] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0038] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0039] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0040] As mentioned above, at present, in order to reduce the number of particles volatilized when the silicone foam pipe heater transmits high-temperature precursors, high-temperature baking is often used to reduce the volatilization of particles during the use of the silicone foam pipe heater. However, when the pipe heater is used at a temperature of 160°C to 180°C, a large amount of particles will still volatilize, causing the process environment in the reaction chamber of the machine to fail to meet the Class 100 clean room standards, thus leading to customer complaints.

[0041] In order to solve the above problems existing in the prior art, the present invention provides a preparation device of a pipe heater, a preparation method of a pipe heater, a semiconductor device, and a computer-readable storage medium, which can increase the working temperature of the pipe heater made of silicone foam to 200°C and can also ensure that the particle size in the process environment of the semiconductor device meets the Class 100 clean room standard.

[0042] In some non-limiting embodiments, the manufacturing apparatus of the above-mentioned pipe heater provided in the first aspect of the present invention can implement the manufacturing method of the above-mentioned pipe heater provided in the second aspect of the present invention, and can also be configured in the above-mentioned semiconductor device provided in the third aspect of the present invention.

[0043] Specifically, in some non-limiting embodiments, the computer-readable storage medium provided in the fourth aspect of the present invention stores computer instructions, which, when executed by a processor, can be used to implement the semiconductor process method provided in the second aspect of the present invention.

[0044] The working principle of the manufacturing device of the above-mentioned pipe heater will be described below in combination with some embodiments of the manufacturing method of semiconductor devices and pipe heaters. Those skilled in the art will understand that the embodiments of these semiconductor devices and the manufacturing method of the pipe heater are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all working modes or all functions of the manufacturing device of the pipe heater. Similarly, the manufacturing device of the pipe heater is also only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on other configuration objects in these semiconductor devices and the implementation subjects of each step in the manufacturing method of the pipe heater.

[0045] Specifically, in some embodiments of the present invention, the semiconductor device may include: a reaction chamber, the interior of which can be used for a thin film deposition process; a foreline, connecting a precursor source and the reaction chamber to transfer a liquid precursor to the reaction chamber; and a pipe heater, disposed in the foreline, which can be used to raise the precursor to a process temperature during the transfer process to meet the gas path temperature requirements in the thin film deposition process.

[0046] In some optional embodiments, the process temperature of the current thermal atomic layer deposition (T-ALD) equipment has reached 170°C, and the process temperature of the vacuum foreline has reached 180°C. It can be seen that the process temperature of the foreline is showing a trend of increasing, so it is necessary to develop a pipeline heater that can work normally at 200°C.

[0047] Hereinafter, the preparation process of the pipeline heater will be introduced in combination with the preparation device and preparation method of the pipeline heater in the present invention, so as to obtain a pipeline heater that can meet the high temperature working temperature of 200°C and will not affect the process environment in the reaction chamber.

[0048] Specifically, see Figure 1 , Figure 1 A schematic structural diagram of a pipeline heater preparation device provided according to some embodiments of the present invention is shown.

[0049] like Figure 1As shown, in some embodiments of the present invention, the preparation device 100 of the pipe heater may include: a baking cavity 110, which can be used to vacuum bake the pipe heater 160 made of silicone foam placed therein. Optionally, the pipe heater 160 can have its own power supply device and temperature control device, so that it can achieve self-heating, so that the temperature of its own vacuum baking can reach the target temperature. The target temperature of the vacuum baking can be above 180°C, and the corresponding vacuum pressure value can usually be in the range of 4 to 6Pa.

[0050] Further, in some optional embodiments, the pipe heater is preferably not in contact with the inner surface of the baking cavity 110. Since a large amount of particles may be deposited on the inner surface of the baking cavity 110, if the pipe heater contacts the inner surface, these particles may adhere to the surface of the pipe heater, thereby causing the environmental particle test result to deteriorate. The preparation device 100 of the pipe heater may also include a gas source 120, which may provide a purge gas into the baking cavity 110 at a regular interval to purge the precipitates of the pipe heater 160.

[0051] Specifically, see Figure 2 , Figure 2 A schematic diagram of component analysis of precipitates from a pipeline heater in a baking chamber during vacuum baking provided by some embodiments of the present invention is shown.

[0052] like Figure 2 As shown, in some embodiments of the present invention, during the vacuum baking of the pipe heater 160 in the baking cavity 110, that is, during the production process of the silicone foamed pipe heater, siloxane will be generated, and short-chain siloxane is volatile. When the operating temperature of the silicone foamed pipe heater is 160°C or higher, siloxane particles will be released.

[0053] exist Figure 2 In the sequence No. 5 and No. 3, the boiling points of Si3 and Si4 at normal pressure (e.g. 760 torr) are 134°C and 175°C respectively, that is, the boiling points at normal pressure do not exceed 175°C. Therefore, these substances can be volatilized under normal pressure baking conditions. Figure 2 In the serial numbers NO.1-2, NO.4 and NO.6-8, Si5-Si12 has a high boiling point at normal pressure, so it cannot be precipitated by normal pressure baking. However, at 20torr, the boiling point of Si5-Si12 will be greatly reduced to 168℃-188℃. Therefore, by reducing the pressure in the chamber and vacuum baking, these substances can be volatilized from the pipe heater in advance, thereby reducing the volatilization of particles when the silicone foam pipe heater works at 160℃-200℃.

[0054] In addition, the preparation method of the vacuum-baked pipe heater in the present invention can also accelerate the precipitation rate of short-chain siloxanes, thereby greatly shortening the baking time. In some embodiments of the present invention, the vacuum baking temperature in the baking chamber 110 can generally be above 180°C. If it is lower than this temperature, the pipe heater 160 will not be baked thoroughly, so that the test results cannot meet the Class 100 clean room standard. The Class 100 clean room standard refers to cleanliness level 100 (ISO4), including dust particles greater than or equal to 0.5μm and the number of dust particles greater than 350 particles / m 3 (0.35 grains / L) to less than or equal to 3500 grains / m 3 (3.5 particles / L), and the number of dust particles greater than or equal to 5μm is 0. In the embodiment of the present invention, if the test result does not meet the Class 100 clean room standard, the particles in the pipeline will enter the reaction chamber along with the precursor, polluting the process environment in the reaction chamber, thereby having a very negative impact on the thin film deposition process, such as the particle size in the generated film exceeding the standard.

[0055] In the above-mentioned embodiment of the present invention, by vacuum baking the pipe heater 160 for transporting the liquid precursor, the material with poor thermal stability in the pipe heater can be pre-volatilized, thereby improving the particle volatilization problem under high temperature conditions, increasing the operating temperature of the pipe heater in the liquid precursor transport pipe, and reducing the number of particles volatilized by the pipe heater under conditions of 160°C and above.

[0056] like Figure 1 As shown, in some embodiments, the preparation device 100 of the pipeline heater may include a vacuum pump 150 and a vacuum gauge 151. The vacuum pump 150 and the vacuum gauge 151 may both be connected to the baking cavity 110, wherein the vacuum pump 150 may be used to pump the gas source in the baking cavity 110 to a preset vacuum degree, that is, to pump the vacuum pressure in the reaction cavity to 4-6 Pa, and the vacuum gauge 151 may be used to detect the vacuum pressure in the baking cavity 110 in real time to confirm whether the pressure in the baking cavity 110 meets the preset vacuum degree.

[0057] Optionally, the gas source 120 may be a nitrogen gas source, so as to introduce nitrogen gas into the baking chamber 110 as a purge gas, so as to timely clean the residual particles in the chamber and reduce the particle concentration in the baking environment. In some other alternative embodiments, the purge gas may also be other inert gases.

[0058] Further, please continue to return to Figure 1, the preparation device 100 of the pipe heater may also include a heating paste 130. The heating paste 130 may be attached to the outer wall of the baking cavity 110 to heat the outer wall so that the temperature of the outer wall is maintained above the condensation temperature of the siloxane. Optionally, the heating paste 130 may also maintain the temperature of the outer wall of the baking cavity 110 at 150°C by self-heating, so as to prevent the precipitate of the pipe heater 160 from condensing on the inner surface of the cavity during the baking process. However, if the temperature of the heating paste 130 is too high, for example, significantly higher than 150°C, there is a risk of contaminating the internal pipe heater 160.

[0059] like Figure 1 As shown, in some embodiments, the preparation device 100 of the pipeline heater may further include a first thermostat 141 and a second thermostat 142. The first thermostat 141 may be connected to the pipeline heater 160 to detect the vacuum baking temperature of the pipeline heater 160 to ensure that the pipeline heater 160 is baked at a temperature of 210°C. The second thermostat 142 may be connected to the outer wall of the baking cavity 110 to detect the temperature of the outer wall to ensure that the temperature of the outer wall is 150°C.

[0060] Next, the working principle of the manufacturing device of the pipeline heater will be further explained in combination with the manufacturing method of the pipeline heater provided in another aspect of the present invention. Figure 3 , Figure 3 A flow chart of a method for preparing a pipeline heater provided according to some embodiments of the present invention is shown.

[0061] like Figure 3 As shown, in some embodiments of the present invention, the method for preparing a pipe heater may include the following steps S310: placing a pipe heater made of silicone foam into a baking cavity of a pipe heater preparation device.

[0062] Specifically, please combine Figure 1 It is commonly understood that in some embodiments of the present invention, the pipe heater 160 made of silicone foam can be placed in the baking cavity 110 of the pipe heater preparation device 100. It should be noted that the pipe heater 160 is preferably not in contact with the inner surface of the baking cavity 110. Since a large amount of particles will be deposited on the inner surface of the baking cavity 110, if the pipe heater contacts the inner surface, these particles will adhere to the surface of the pipe heater, resulting in a deterioration of the environmental particle test results.

[0063] Afterwards, if Figure 3 As shown, step S320 may be performed: adjusting the vacuum pressure and vacuum temperature in the baking cavity to perform vacuum baking on the pipeline heater.

[0064] Specifically, please combine Figure 1It is commonly understood that in some embodiments of the present invention, the vacuum pressure in the baking cavity 110 can be adjusted to be less than or equal to 6Pa. Optionally, the vacuum pressure range can be 4 to 6Pa, for example, 5Pa. The temperature of the pipe heater 160 in the baking cavity 110 is adjusted so that its self-heating vacuum temperature reaches above 180°C. By performing vacuum baking of the pipe heater 160 at above 180°C, the following can be achieved: Figure 2 The material with poor thermal stability in the pipe heater shown is volatilized in advance, thereby improving the particle volatilization problem under high temperature conditions, increasing the operating temperature of the pipe heater, and reducing the amount of particle volatilization of the pipe heater under conditions of 160°C and above.

[0065] For further information, see Figure 4 , Figure 4 The graph shows the test results of 0.1 um particles under different baking conditions provided by some embodiments of the present invention.

[0066] like Figure 4 As shown, in some embodiments of the present invention, Figure 4 As shown in the second column, before baking, when the working temperature of the pipe heater 160 is above 160°C, the amount of volatilized particles in the silicone foamed pipe heater increases sharply. Figure 4 It also shows that the particle size of the pipe heater 160 prepared under four different baking conditions, including atmospheric baking at 200°C for 24 hours, atmospheric baking at 200°C for 72 hours, vacuum baking at 195°C, and vacuum baking at 210°C, is tested respectively.

[0067] like Figure 4 As shown in the test case of atmospheric baking, in the test case of atmospheric baking at a temperature of 200°C for 24 hours, when the operating temperature of the duct heater reaches 180°C or above, the number of volatilized particles in the duct heater increases sharply, and it is impossible to meet the Class 100 clean room standard. In addition, in the test case of atmospheric baking at a temperature of 200°C for 72 hours, when the operating temperature of the duct heater reaches 190°C or above, the number of volatilized particles in the duct heater increases sharply, and it is impossible to meet the Class 100 clean room standard.

[0068] In the vacuum baking test example, for example, at a vacuum baking temperature of 195°C, when the operating temperature of the pipeline heater reaches 190°C, the number of volatilized particles in the pipeline heater is still small, and the particle size is good. At this time, the vacuum pressure value in the reaction chamber can be set to 6Pa.

[0069] Further, in the test example of vacuum baking at a temperature of 210°C, the number of volatilized particles in the pipe heater will not increase sharply until the operating temperature of the pipe heater 160 reaches 220°C. Prior to this, the pipe heater after vacuum baking at 210°C still did not volatilize a large number of particles until the operating temperature reached 215°C, so the preferred target temperature for vacuum baking can reach 210°C, and the corresponding vacuum pressure can be preferably 4-5Pa, so as to shorten the baking time to a certain extent. At this time, the operating temperature of the pipe heater made of silicone foam pipe can be increased to 200°C or even 215°C, ensuring that the environmental particles of the silicone foam pipe heater still meet the Class 100 clean room standard when used at 160°C to 200°C. Alternatively, in the test example of vacuum baking at 210°C, the vacuum pressure value in the reaction chamber can also be set to 6Pa, and the above technical effects can be achieved by slightly extending the baking time. In this test example, by vacuum baking the pipe heater at 210°C during the preparation process, the problem of particle volatilization when the pipe heater made of silicone foam is used under high temperature conditions can be effectively solved, thereby increasing the operating temperature range of the silicone foam pipe heater and enabling it to work stably in a high temperature environment above 200°C.

[0070] Furthermore, in some optional embodiments, the preparation device 100 of the pipeline heater may further include a self-heating heating sticker 130 attached to the outer wall of the baking cavity 110. The heating sticker can keep the temperature of the outer wall above the condensation temperature of siloxane, usually 150°C, so as to prevent the precipitate of the pipeline heater 160 from condensing on the inner surface of the cavity during the baking process, that is, to prevent the volatiles from condensing on the inner surface of the cavity.

[0071] Afterwards, if Figure 3 As shown, step S330 may be performed: providing a purge gas into the baking chamber via a gas source at a fixed time to purge the precipitates from the pipeline heater.

[0072] Specifically, in some embodiments, in response to a preset time period of vacuum baking in the baking chamber 110, which may be 30 minutes, nitrogen may be provided to the baking chamber 110 via the gas source 120 to purge the precipitates of the pipeline heater 160 during the vacuum baking process. During the purge, the pressure in the baking chamber 110 is close to normal pressure. By periodically purging the baking chamber 110 during the baking process, the particles in the baking environment may be extracted in time, thereby reducing the particle concentration in the baking environment.

[0073] Finally, if Figure 3 As shown, step S340 may be performed: obtaining the prepared pipeline heater.

[0074] Specifically, in some embodiments, in response to the pipeline heater 160 being continuously vacuum-baked for 72 to 96 hours, a completed pipeline heater can be obtained.

[0075] Next, please combine Figure 1 As shown, referring to a specific embodiment, when the preparation device 100 of the pipe heater is used, the cavity volume of the baking cavity 110 can be 16L, and the vacuum degree in the baking cavity 110 is maintained at 5Pa, the pipe heater 160 placed in the baking cavity 110 is vacuum-baked at 210°C, and the baking time is 72 to 96 hours. The pipe heater 160 can be heated by self-heating and vacuum-baked itself. After the vacuum baking is completed, the first particle size test result indicates that it can withstand 215°C, that is, at an operating temperature of 215°C, the environmental particle size test result of the pipe heater 160 does not exceed the standard. After 42 hours, the environmental particle size test of the pipe heater 160 was tested, and the result was still tolerable to 215°C. Moreover, during the preparation process of the entire vacuum-baked pipe heater, the overall thickness of the pipe heater 160 did not change, and there was no obvious hollowing phenomenon inside.

[0076] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0077] Those skilled in the art will further appreciate that the steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be directly embodied in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside in a user terminal as discrete components.

[0078] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using a coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0079] In summary, the present invention provides a preparation device for a pipe heater, a preparation method for a pipe heater, a semiconductor device, and a computer-readable storage medium, which can improve the working temperature of a pipe heater made of silicone foam and at the same time ensure that the particle size in the process environment of the semiconductor device meets the Class 100 clean room standard.

[0080] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A preparation device for a pipeline heater, characterized in that: include: A baking cavity is used to vacuum bake a silicone foam pipe heater placed inside the cavity; as well as A gas source is used to periodically provide a purge gas into the baking cavity to purge the precipitates from the pipeline heater.

2. The preparation device according to claim 1, characterized in that: The target temperature of the vacuum baking is above 180° C., and the corresponding vacuum pressure value ranges from 4 to 6 Pa.

3. The preparation device according to claim 1, characterized in that: The duct heater in the baking cavity does not contact the inner surface of the baking cavity.

4. The preparation device according to claim 1, characterized in that: include: A heating paste is attached to the outer wall of the baking cavity to keep the temperature of the outer wall above the condensation temperature of the siloxane.

5. The preparation device according to claim 4, characterized in that: include: A first thermostat and a second thermostat, wherein the first thermostat is connected to the pipe heater and is used to detect the vacuum baking temperature of the pipe heater, and the second thermostat is connected to the outer wall and is used to detect the temperature of the outer wall.

6. The preparation device according to claim 1, characterized in that: include: A vacuum pump and a vacuum gauge are both connected to the baking cavity, wherein the vacuum pump is used to draw the gas source in the baking cavity to a preset vacuum degree, and the vacuum gauge is used to detect the vacuum pressure in the baking cavity.

7. A method for preparing a pipeline heater, characterized in that: The following steps are involved: Putting a silicone foamed pipe heater into a baking cavity of a pipe heater preparation device according to any one of claims 1 to 6; Adjusting the vacuum pressure and vacuum temperature in the baking cavity to perform vacuum baking on the pipeline heater; providing a purge gas into the baking chamber at a regular interval via a gas source to purge the precipitates from the pipeline heater; and The prepared pipeline heater is obtained.

8. The preparation method according to claim 7, characterized in that: The preparation device also includes a heating paste attached to the outer wall of the baking cavity. The step of adjusting the pressure and temperature in the baking cavity to vacuum bake the pipeline heater includes: The vacuum pressure in the baking cavity is adjusted to 4-6 Pa, and the temperature of the pipe heater in the baking cavity is adjusted so that the self-heating vacuum temperature reaches above 180° C., and the temperature of the outer wall is maintained above the condensation temperature of siloxane through the heating plate.

9. The preparation method according to claim 7, characterized in that: The step of providing a purge gas into the baking cavity via a gas source at a fixed time to purge the precipitates from the pipeline heater comprises: In response to every 30 minutes of vacuum baking in the baking chamber, nitrogen gas is provided into the baking chamber via the gas source to purge precipitates from the pipeline heater.

10. The preparation method according to claim 7, characterized in that: The step of obtaining the prepared pipeline heater comprises: In response to the pipeline heater being continuously vacuum-baked for 72 to 96 hours, the prepared pipeline heater is obtained.

11. A semiconductor device, characterized in that: include: A reaction chamber, the interior of which is used for performing a thin film deposition process; A front pipeline, connecting a precursor source and the reaction chamber to transfer the precursor to the reaction chamber; as well as The pipeline heater prepared by the method for preparing a pipeline heater according to any one of claims 7 to 10 is arranged in the front-stage pipeline and is used to raise the precursor to the process temperature during the transmission process.

12. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the method for preparing the pipeline heater according to any one of claims 7 to 10 is implemented.

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