An oersted field assisted SOT-MRAM cell and a method for regulating the write voltage thereof

Abstract

The application discloses an Oersted magnetic field assisted SOT-MRAM unit and a write voltage regulation method thereof, and the structure comprises a first PMOS tube, a second PMOS tube and a SOT device. The gate of the first PMOS tube is connected with a first word line WL, the source is connected with a reading channel of the SOT device, and the drain is connected to a bit line BL. The gate of the second PMOS tube is connected with a second word line WWL, the drain is connected to the bit line BL, and the source is connected to a writing channel of the SOT device. The other end of the writing channel of the SOT device is connected to a source line SL. A current line and a magnetic sensor are arranged directly below the SOT device, and the current line is located between the SOT device and the magnetic sensor. An Oersted magnetic field is generated by applying a current in the current line. In the writing process, the different device flip probabilities are concentrated around the same voltage by the controllable magnetic field, so that the writing error is reduced, the overshoot is avoided, and the loss is reduced.

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