Back contact photovoltaic modules

By designing the interconnection structure of the back-contact photovoltaic module, the width of the branch ends electrically connected to the fine grid is gradually reduced, and insulating strips are provided on the fine grid to increase the spacing. This solves the problem of poor contact caused by overflow of the insulating strips, improves the photoelectric conversion efficiency and reduces the preparation cost.

CN119584655BActive Publication Date: 2025-09-30JINKO SOLAR CO LTD +1
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Patent Information

Application Number
CN202411784369.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-12-05
Publication Date
2025-09-30
Estimated Expiration
2044-12-05

AI Technical Summary

Technical Problem

In back-contact photovoltaic modules, when the interconnect structure is connected to fine grids of different polarities, overflow of the insulating strips can easily lead to poor electrical contact between the interconnect structure and the fine grids of the same polarity, affecting the efficiency of collecting photogenerated carriers and reducing the photoelectric conversion efficiency.

Method used

The fine gate designed for electrical connection of the interconnection structure includes a first branch and a second branch, the width of the end of which gradually decreases in the direction close to the interconnection structure, and an insulating strip is provided on the fine gate so that the spacing between the insulating strip and the fine gate gradually increases to prevent the insulating material from overflowing and covering the electrical connection, thereby ensuring good collection efficiency.

Benefits of technology

The problem of poor contact between the interconnect structure and the fine grid is effectively avoided, the photoelectric conversion efficiency of the back-contact photovoltaic module is improved, and the preparation cost of the fine grid is reduced.

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Abstract

The embodiments of the present disclosure relate to the photovoltaic field and provide a back-contact photovoltaic module, comprising: a battery body including a plurality of positioning areas arranged at intervals along a first direction on the back side, and a first fine grid and a second fine grid arranged alternately along a second direction on the back side; an interconnection structure located on the positioning area, a single interconnection structure being electrically connected to one of the plurality of first fine grids and the plurality of second fine grids; a single interconnection structure electrically connected to the fine grid is used as a target interconnection structure, and any fine grid electrically connected to the target interconnection structure includes a first branch and a second branch, both of the first branch and the second branch include ends close to the target interconnection structure, and along the direction close to the target interconnection structure, the width of the ends of the first branch and the second branch in the second direction gradually decreases, and the fine grid is one of the first fine grid and the second fine grid; an insulating strip, located on any fine grid electrically insulated from the target interconnection structure, at least conducive to improving the photoelectric conversion efficiency of the back-contact photovoltaic module.
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Description

Technical Field

[0001] The embodiments of the present disclosure relate to the photovoltaic field, and in particular to a back-contact photovoltaic module. Background Art

[0002] With the gradual depletion of fossil fuels, photovoltaic cells are becoming increasingly popular as a new energy alternative. Photovoltaic cells convert sunlight into electricity. They utilize the photovoltaic principle to generate charge carriers, which are then extracted using electrodes, enabling efficient utilization of the electrical energy. The grid lines of photovoltaic cells play a crucial role in collecting and transmitting electrons. When assembling multiple photovoltaic cells into a photovoltaic module, interconnect structures are often used to connect the grid lines of adjacent cells.

[0003] In back-contact photovoltaic modules, the interconnect structure and the fine grids are arranged in different directions. Therefore, while the interconnect structure connects to the fine grids of the same polarity, it also needs to cross over fine grids of different polarities. To prevent short circuits caused by the interconnect structure connecting fine grids of different polarities, an insulating strip is designed on the fine grids of different polarity from the interconnect structure.

[0004] However, near the interconnect structure, the overflow of the insulating strip can easily lead to poor electrical contact between the interconnect structure and the fine grid of the same polarity, affecting the collection efficiency of the interconnect structure for photogenerated carriers, thereby affecting the photoelectric conversion efficiency of the back-contact photovoltaic module. Summary of the Invention

[0005] The embodiments of the present disclosure provide a back-contact photovoltaic module, which is at least beneficial to improving the photoelectric conversion efficiency of the back-contact photovoltaic module.

[0006] According to some embodiments of the present disclosure, on one hand, an embodiment of the present disclosure provides a back-contact photovoltaic module, comprising: a cell body, wherein the back side of the cell body comprises a plurality of positioning areas arranged at intervals along a first direction, and the back side is provided with first and second fine grids arranged alternately along a second direction; an interconnection structure, wherein one of the interconnection structures is located on one of the positioning areas, and a single interconnection structure is electrically connected to one of the plurality of first fine grids and the plurality of second fine grids; the single interconnection structure electrically connected to the fine grid is used as a target interconnection structure, and any fine grid electrically connected to the target interconnection structure comprises a first branch and a second branch, wherein the first branch and the second branch respectively connect two sides of the target interconnection structure along the first direction, the first branch and the second branch each comprise an end portion close to the target interconnection structure, and the widths of the ends of the first branch and the second branch in the second direction gradually decrease along the direction close to the target interconnection structure, and the fine grid is one of the first fine grid and the second fine grid; an insulating strip, located on any of the fine grids electrically insulated from the target interconnection structure, and the spacing between the insulating strip and the fine grid close to the insulating strip gradually increases along the direction close to the target interconnection structure.

[0007] In some embodiments, the back-contact photovoltaic component further includes: a first main grid and a second main grid alternately arranged along the first direction, one of the first main grid or the second main grid is provided on a single positioning area, the interconnection structure includes a welding strip extending along the second direction and at least two welding pads arranged at intervals along the second direction, the welding pad is located between the welding strip and one of the first main grid or the second main grid, and the first branch and the second branch are both in contact with the welding pad in the target interconnection structure; and / or, the interconnection structure includes a welding strip extending along the second direction, and the first branch and the second branch are both in contact with the welding strip in the target interconnection structure.

[0008] In some embodiments, the back-contact photovoltaic component further includes: a conductive portion, the conductive portion at least covering the contact connection between the first branch and the second branch and the solder pad in the target interconnection structure, and / or the conductive portion at least covering the contact connection between the first branch and the second branch and the solder strip in the target interconnection structure.

[0009] In some embodiments, the electrical connection between the first branch and the target interconnect structure is a first intersection, and the electrical connection between the second branch and the target interconnect structure is a second intersection; the conductive portion includes a first sub-conductive portion and a second sub-conductive portion, the first sub-conductive portion at least covers the first intersection, and the second sub-conductive portion at least covers the second intersection.

[0010] In some embodiments, the lengths of the first sub-conductive portion and the second sub-conductive portion in the first direction are both 0.5 mm to 1.5 mm, and the widths of the first sub-conductive portion and the second sub-conductive portion in the second direction are both 0.3 mm to 0.5 mm.

[0011] In some embodiments, the electrical connection between the first branch and the target interconnect structure is a first intersection, and the electrical connection between the second branch and the target interconnect structure is a second intersection; the conductive portion is a conductive strip extending along the first direction, and the same conductive strip covers the first intersection and the second intersection adjacent to each other along the first direction.

[0012] In some embodiments, the length of the conductive strips in the first direction is 4 mm to 7 mm, and the width of the conductive strips in the second direction is 0.3 mm to 0.5 mm.

[0013] In some embodiments, along the first direction, the length of the first branch is a first length, the length of the first branch near the end of the target interconnection structure is a second length, and the ratio of the second length to the first length is 0.13 to 0.35; and / or, along the first direction, the length of the second branch is a third length, the length of the second branch near the end of the target interconnection structure is a fourth length, and the ratio of the fourth length to the third length is 0.13 to 0.35.

[0014] In some embodiments, the second length is 1.5 mm to 3 mm; and / or the fourth length is 1.5 mm to 3 mm.

[0015] In some embodiments, along the direction approaching the target interconnect structure, the width of at least one of the first branch and the second branch at the end portion close to the target interconnect structure in the second direction gradually decreases from a first preset value to a second preset value; wherein the first preset value is 13 μm to 19 μm, and the second preset value is 3 μm to 6 μm.

[0016] The technical solution provided by the embodiments of the present disclosure has at least the following advantages:

[0017] Any fine grid electrically connected to a target interconnect structure is designed to include a first branch and a second branch, and the widths of the ends of both the first branch and the second branch in the second direction gradually decrease as they approach the target interconnect structure. An insulating strip is located on any fine grid electrically insulated from the target interconnect structure. Thus, along the direction approaching the target interconnect structure, not only does the spacing between the insulating strip adjacent to the first branch in the second direction and the first branch gradually increase, but the spacing between the insulating strip adjacent to the second branch in the second direction and the second branch gradually increases. During the preparation of the insulating strip, if insulating material, such as insulating glue, overflows near the end of the target interconnect structure, this helps prevent the overflowed insulating strip from covering the fine grid to be electrically connected to the target interconnect structure, thereby avoiding poor contact between the target interconnect structure and the fine grid. This helps ensure good current collection efficiency of the fine grid by the target interconnect structure, thereby improving the photoelectric conversion efficiency of the back-contact photovoltaic module. Furthermore, along the direction approaching the target interconnect structure, the widths of the ends of both the first branch and the second branch in the second direction gradually decrease, which helps reduce the cost of preparing the fine grid while ensuring good current collection efficiency of the target interconnect structure from the fine grid. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] One or more embodiments are exemplarily illustrated by the pictures in the corresponding drawings. These exemplified descriptions do not constitute a limitation on the embodiments. Unless otherwise stated, the pictures in the drawings do not constitute a scale limitation. In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the traditional technology, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 A first partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure;

[0020] Figure 2 A second partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure;

[0021] Figure 3 A third partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure;

[0022] Figure 4 A fourth partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure;

[0023] Figure 5 A fifth partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure;

[0024] Figure 6 A sixth partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure;

[0025] Figure 7 A seventh partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure;

[0026] Figure 8 An eighth partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure;

[0027] Figure 9 A ninth partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure;

[0028] Figure 10 This is a tenth partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure. DETAILED DESCRIPTION

[0029] As can be seen from the background art, the photoelectric conversion efficiency of back-contact photovoltaic modules needs to be improved.

[0030] Analysis found that in the process of preparing back-contact photovoltaic modules, when printing insulating glue on the opposite-polarity fine grids located on both sides of the interconnection structure to achieve electrical insulation of the fine grids of different polarities, overflow of the insulating glue will occur at the edge of the insulating glue, and the edge of the insulating glue is close to the interconnection structure, causing the overflowed insulating glue to cover the electrical connection between the interconnection structure and the same-polarity fine grid, resulting in poor contact between the interconnection structure and the same-polarity fine grid.

[0031] The present disclosure provides a back-contact photovoltaic module, wherein any fine grid electrically connected to a target interconnect structure includes a first branch and a second branch, and the widths of the ends of the first branch and the second branch in the second direction gradually decrease along a direction approaching the target interconnect structure. An insulating strip is located on any fine grid electrically insulated from the target interconnect structure. Thus, along the direction approaching the target interconnect structure, not only does the spacing between the insulating strip adjacent to the first branch in the second direction and the first branch gradually increase, but the spacing between the insulating strip adjacent to the second branch in the second direction and the second branch gradually increases. During the preparation of the insulating strip, when insulating material, such as insulating glue, overflows near the end of the target interconnect structure, this helps prevent the overflowed insulating strip from covering the fine grid to be electrically connected to the target interconnect structure, thereby avoiding poor contact between the target interconnect structure and the fine grid. This helps ensure good current collection efficiency of the fine grid by the target interconnect structure, thereby improving the photoelectric conversion efficiency of the back-contact photovoltaic module. Furthermore, along the direction approaching the target interconnect structure, the widths of the ends of the first branch and the second branch in the second direction gradually decrease, which helps ensure good current collection efficiency of the fine grid by the target interconnect structure while reducing the preparation cost of the fine grid.

[0032] In the description of the embodiments of the present disclosure, technical terms such as "first" and "second" are used solely to distinguish between different objects and should not be understood to indicate or imply relative importance or to implicitly specify the quantity, specific order, or primary and secondary relationship of the technical features indicated. In the description of the embodiments of the present disclosure, "plurality" means more than two, unless otherwise specifically defined.

[0033] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present disclosure. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0034] In the description of the embodiments of the present disclosure, the term "and / or" is merely a description of an association relationship between associated objects, indicating that three relationships may exist. For example, A and / or B can represent the following three situations: A exists, A and B exist at the same time, and B exists. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0035] In the description of the embodiments of the present disclosure, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0036] In the description of the embodiments of the present disclosure, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the embodiments of the present disclosure.

[0037] In the description of the embodiments of the present disclosure, unless otherwise expressly specified or limited, technical terms such as "installed," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and they can refer to internal connectivity between two components or interaction between two components. Those skilled in the art can understand the specific meanings of the above terms in the embodiments of the present disclosure based on specific circumstances.

[0038] In the accompanying drawings corresponding to the embodiments of the present disclosure, the thickness and area of ​​the layers are exaggerated for better understanding and ease of description. When describing a component (such as a layer, film, region or substrate) on another component or on the surface of another component, the component can be "directly" located on the surface of the other component, or a third component can be present between the two components. Conversely, when describing a component on the surface of another component or when another component is formed or provided on the surface of a component, it means that there is no third component between the two components. In addition, when describing a component as being "substantially" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a partial edge of the entire surface.

[0039] In the description of the embodiments of the present disclosure, when a component is referred to as "including" another component, unless otherwise specified, other components are not excluded, and other components may be further included. In addition, when a component such as a layer, film, region, or plate is referred to as being "on / located on" another component, it can be "directly on" the other component (i.e., located on the surface of the other component with no other components between them), or another component can be present between them. In addition, when a component such as a layer, film, region, or plate is "directly on" another component, or when a component such as a layer, film, region, or plate is located on the surface of another component, it means that no other components are located between them.

[0040] The terms used herein in the description of the various embodiments are intended only to describe the specific embodiments and are not intended to be limiting. As used in the description of the various embodiments and the appended claims, "the component" is intended to include the plural form unless the context clearly indicates otherwise. A component includes a layer, film, region, or plate.

[0041] The following describes various embodiments of the present disclosure in detail with reference to the accompanying drawings. However, those skilled in the art will appreciate that many technical details are provided in the various embodiments of the present disclosure to help readers better understand the embodiments of the present disclosure. However, even without these technical details and the various variations and modifications based on the following embodiments, the technical solutions claimed in the embodiments of the present disclosure can be implemented.

[0042] An embodiment of the present disclosure provides a back-contact photovoltaic module, which will be described in detail below with reference to the accompanying drawings.

[0043] Combined with reference Figure 1 and Figure 2 The back-contact photovoltaic module includes: a battery body 100, a back surface 100a of the battery body 100 includes a plurality of positioning areas 110 arranged at intervals along a first direction X, and a first fine grid 111 and a second fine grid 121 arranged alternately along a second direction Y are provided on the back surface 100a; an interconnection structure 102, an interconnection structure 102 is located on a positioning area 110, a single interconnection structure 102 is electrically connected to one of the plurality of first fine grids 111 and the plurality of second fine grids 121; a single interconnection structure 102 electrically connected to the fine grid 101 is used as a target interconnection structure 112, and any fine grid 101 electrically connected to the target interconnection structure 112 includes a first branch 131 and a second branch 141, and the first The branch 131 and the second branch 141 are respectively connected to the two sides of the target interconnection structure 112 along the first direction X. The first branch 131 and the second branch 141 both include ends close to the target interconnection structure 112, and along the direction close to the target interconnection structure 112, the widths of the ends of the first branch 131 and the second branch 141 in the second direction Y gradually decrease. The fine gate 101 is one of the first fine gate 111 and the second fine gate 121; the insulating strip 103 is located on any fine gate 101 that is electrically insulated from the target interconnection structure 112, and along the direction close to the target interconnection structure 112, the spacing between the insulating strip 103 and the fine gate 101 close to the insulating strip 103 gradually increases.

[0044] in, Figure 1 A first partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure; Figure 2 A second partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure.

[0045] It should be noted that the battery body 100 can be a back-contact battery with a busbar or a back-contact battery without a busbar. Regardless of whether a busbar is provided on the battery body 100, an interconnection structure 102 is required to collect and utilize the current on the fine grid 101. Since the fine grid 101 can be either a first fine grid 111 or a second fine grid 121, the interconnection structure 102 can also be divided into two categories: one type is electrically connected to the first fine grid 111 and electrically insulated from the second fine grid 121 to collect the current on the first fine grid 111; the other type is electrically connected to the second fine grid 121 and electrically insulated from the first fine grid 111 to collect the current on the second fine grid 121. For any interconnection structure 102, that is, a single target interconnection structure 112, it is only electrically connected to one of the multiple first fine grids 111 and the multiple second fine grids 121. The single target interconnection structure 112 can be either of the two types of interconnection structures 102 described above.

[0046] In addition, in order to clearly illustrate the first fine gate 111 and the second fine gate 121, Figure 2 In FIG, a first fine gate 111 and a second fine gate 121 are indicated by dashed boxes, and Figure 1 and Figure 2 In the figure, the insulating strip 103 is drawn in perspective; in order to distinguish the two types of interconnection structures 102, Figure 2 Different filling methods are used to draw the interconnection structure 102 electrically connected to the first fine gate 111 and the interconnection structure 102 electrically connected to the second fine gate 121, and the interconnection structure 102 electrically connected to the second fine gate 121 is used as a single target interconnection structure 112; in order to facilitate the distinction between the first branch 131 and the second branch 141, Figure 2 The first branch 131 and the second branch 141 are drawn using different filling methods.

[0047] Furthermore, in order to facilitate the distinction between the first branch 131 belonging to the first fine gate 111 and the first branch 131 belonging to the second fine gate 121, Figure 2 Different filling methods are also used to draw the first branch 131 belonging to the first fine gate 111 and the second fine gate 121; in order to facilitate the distinction between the second branch 141 belonging to the first fine gate 111 and the second branch 141 belonging to the second fine gate 121, Figure 2 Different filling methods are also used to draw the second branches 141 belonging to the first fine gate 111 and the second fine gate 121.

[0048] In some cases, the electrical connection between a single interconnection structure 102 and one of the multiple first fine grids 111 and the multiple second fine grids 121 includes at least the following situations: in some cases, the single interconnection structure 102 is electrically connected to all the first fine grids 111 on a single battery body 100; in other cases, the single interconnection structure 102 is electrically connected to all the second fine grids 121 on a single battery body 100.

[0049] It is worth emphasizing that any fine gate 101 designed to be electrically connected to the target interconnect structure 112 includes a first branch 131 and a second branch 141, and that the widths of the ends of the first branch 131 and the second branch 141 in the second direction Y gradually decrease as they approach the target interconnect structure 112. The insulating strip 103 is located on any fine gate 101 that is electrically insulated from the target interconnect structure 112. Thus, as they approach the target interconnect structure 112, not only does the spacing between the insulating strip 103 adjacent to the first branch 131 in the second direction Y gradually increase, but also the spacing between the insulating strip 103 adjacent to the second branch 141 in the second direction Y and the second branch 141 gradually increase. In other words, near the target interconnection structure 112, the spacing between the insulating strip 103 located on the second fine gate 121 and the first fine gate 111 in the second direction Y gradually increases, or the spacing between the insulating strip 103 located on the first fine gate 111 and the second fine gate 121 in the second direction Y gradually increases. In the process of preparing the insulating strip 103, when the insulating material, such as insulating glue, overflows near the end of the target interconnection structure 112, it is beneficial to avoid the overflowed insulating strip 103 covering the fine gate 101 that needs to be electrically connected to the target interconnection structure 112, thereby avoiding the problem of poor contact between the target interconnection structure 112 and the fine gate 101, and is beneficial to ensuring that the target interconnection structure 112 has good collection efficiency of the current on the fine gate 101, thereby improving the photoelectric conversion efficiency of the back-contact photovoltaic module.

[0050] In some cases, during the fabrication of a back-contact photovoltaic module, first the first and second fine gates 111, 121 are fabricated, then the insulating strips 103 are formed on portions of the first and second fine gates 111, 121, and finally, the interconnect structure 102 electrically connected to the first and second fine gates 111, 121 is formed. Thus, during the fabrication of the insulating strips 103, when the insulating material overflows near the end of the target interconnect structure 112, the target interconnect structure 112, which is to be electrically connected to the fine gates 101, has not yet been formed. Based on this, the widths of the ends of the first and second branches 131, 141, in the second direction Y, are designed to gradually decrease as they approach the target interconnect structure 112. This allows for more margin for the insulating strips 103 to overflow near the target interconnect structure 112, effectively preventing contact between the insulating strips 103 and the fine gates 101, which are to be electrically connected to the target interconnect structure 112.

[0051] In addition, the widths of the ends of the first branch 131 and the second branch 141 in the second direction Y gradually decrease along the direction approaching the target interconnection structure 112, which is beneficial for reducing the preparation cost of the fine gate 101 while ensuring good current collection efficiency of the target interconnection structure 112 on the fine gate 101.

[0052] The embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings.

[0053] In some embodiments, reference Figure 2 , multiple interconnect structures 102 are arranged at intervals along the first direction X; the first branches 131 and the second branches 141 included in any fine gate 101 electrically connected to the target interconnect structure 112 are taken as a group of branch groups 151, a single fine gate 101 includes multiple groups of branch groups 151 arranged at intervals along the first direction X, and the multiple groups of branch groups 151 included in the first fine gate 111 and the multiple groups of branch groups 151 included in the second fine gate 121 are staggered along the second direction Y.

[0054] It is worth noting that the interconnect structure 102 can also be divided into two types: a first interconnect structure and a second interconnect structure. The first interconnect structure is electrically connected to the first fine gate 111 and electrically insulated from the second fine gate 121 to collect the current on the first fine gate 111; the second interconnect structure is electrically connected to the second fine gate 121 and electrically insulated from the first fine gate 111 to collect the current on the second fine gate 121. It should be noted that a single target interconnect structure 112 can be either the first interconnect structure or the second interconnect structure. Figure 2 In the figure, the target interconnect structure 112 may be the second interconnect structure or is used as an example.

[0055] In some cases, the plurality of interconnect structures 102 arranged at intervals along the first direction X include: first interconnect structures and second interconnect structures arranged alternately along the first direction X. In other words, a second interconnect structure is provided between two adjacent first interconnect structures. The first branches 131 and the second branches 141 in a single branch group 151 in the first fine gate 111 are respectively connected to two sides of a single first interconnect structure along the first direction X, and the first branches 131 and the second branches 141 in a single branch group 151 in the second fine gate 121 are respectively connected to two sides of a single second interconnect structure along the first direction X. The first interconnect structures and the second interconnect structures are arranged alternately along the first direction X, so that the multiple branch groups 151 included in the first fine gate 111 and the multiple branch groups 151 included in the second fine gate 121 are staggered along the second direction Y.

[0056] It should be noted that the branch group 151 included in the first fine gate 111 is regarded as the first branch group, and the branch group 151 included in the second fine gate 121 is regarded as the second branch group; the multiple groups of branch groups 151 included in the first fine gate 111 and the multiple groups of branch groups 151 included in the second fine gate 121 are staggered along the second direction Y, which means that the adjacent first branch groups and second branch groups along the second direction Y are only partially opposite in some areas, that is, only the positive projections of some areas on the plane perpendicular to the second direction Y coincide, for example, the second branch 141 in the first branch group is partially opposite to the first branch 131 in the second branch group along the second direction Y, but the first branch 131 in the first branch group is not completely opposite to the second branch 141 in the second branch group along the second direction Y.

[0057] It is noteworthy that the insulating strip 103 is located on each fine gate 101, but for any target interconnect structure 112, the insulating strip 103 located on the fine gate 101 electrically insulated from the target interconnect structure 112 at least covers the end of the fine gate 101 near the target interconnect structure 112. In one example, when the interconnect structure 102 electrically connected to the first fine gate 111 serves as the target interconnect structure 112, the insulating strip 103 located on the second fine gate 121 at least covers the end of the second fine gate 121 near the target interconnect structure 112, thereby preventing the first fine gate 111 from being electrically connected to the second fine gate 121 through the target interconnect structure 112. When the interconnect structure 102 electrically connected to the second fine gate 121 serves as the target interconnect structure 112, the insulating strip 103 located on the first fine gate 111 at least covers the end of the first fine gate 111 near the target interconnect structure 112, thereby preventing the second fine gate 121 from being electrically connected to the first fine gate 111 through the target interconnect structure 112.

[0058] It should be noted that the insulating strip 103 only needs to cover the end of the fine gate 101 close to the interconnect structure 102 that is electrically insulated therefrom. In one embodiment of the present disclosure, there is no limitation on the length of the fine gate 101 covered by the insulating strip 103. For example, along the first direction X, the length of a single insulating strip 103 can be 1 / 4, 1 / 3, 1 / 2, 2 / 3, or 3 / 4 of the length of the first branch 131 or the second branch 141. Figure 1 and Figure 2 10 and 10. There are only two examples of the positional relationship between the insulating strip 103 and the fine gate 101.

[0059] In some embodiments, reference Figure 2Along the first direction X, the first branch 131 includes a first end 133 proximate to the target interconnect structure 112 and a first current collecting portion 134. The first current collecting portion 134 is located on the side of the first end 133 away from the target interconnect structure 112, and the width of the first current collecting portion 134 in the second direction Y is greater than or equal to the maximum width of the first end 133 in the second direction Y. In this manner, the first branch 131 not only helps prevent overflow of the insulating strip 103 from affecting the electrical connection between the first branch 131 and the target interconnect structure 112, thanks to the gradually tapered first end 133, but also ensures a sufficiently large contact area between the fine grid 101 and the battery body 100, thanks to the wider first current collecting portion 134, thereby improving the overall efficiency of the first branch 131 in collecting photogenerated carriers generated in the battery body 100.

[0060] In some embodiments, reference Figure 2 Along the first direction X, the second branch 141 includes a second end 143 proximate to the target interconnect structure 112 and a second current collecting portion 144. The second current collecting portion 144 is located on the side of the second end 143 away from the target interconnect structure 112, and the width of the second current collecting portion 144 in the second direction Y is greater than or equal to the maximum width of the second end 143 in the second direction Y. In this way, the second branch 141 not only helps prevent the overflow of the insulating strip 103 from affecting the electrical connection between the second branch 141 and the target interconnect structure 112 by means of the second end 143 with a gradually varying width, but also ensures a sufficiently large contact area between the fine grid 101 and the battery body 100 by means of the wider second current collecting portion 144, thereby improving the overall efficiency of the second branch 141 in collecting photogenerated carriers generated in the battery body 100.

[0061] The battery body 100 is described in detail below as a back-contact battery with a busbar and a back-contact battery without a busbar.

[0062] In some embodiments, in conjunction with reference Figure 3 and Figure 4 The battery body 100 may be a back contact battery with a main grid, and the back contact photovoltaic module may further include: a first main grid 114 and a second main grid 124 alternately arranged along the first direction X, a single positioning area 110 (reference Figure 1 ) is provided with one of the first main gate 114 or the second main gate 124, the interconnection structure 102 includes a welding ribbon 122 extending along the second direction Y and at least two welding pads 132 arranged at intervals along the second direction Y, the welding pad 132 is located between the welding ribbon 122 and one of the first main gate 114 or the second main gate 124, and the first branch 131 and the second branch 141 are both in contact with the welding pad 132 in the target interconnection structure 112.

[0063] In other words, the first fine grid 111 and the second fine grid 121 are both electrically connected to the solder strip 122 through the solder pad 132, and the first branch 131 and the second branch 141 both include ends close to the solder pad 132 in the target interconnect structure 112, and the ends are electrically contacted with the solder pad 132, and along the direction close to the solder pad 132 in the target interconnect structure 112, the widths of the ends of the first branch 131 and the second branch 141 in the second direction Y gradually decrease.

[0064] in, Figure 3 This is a third partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure. Figure 4 This is a fourth partial top view of a back-contact photovoltaic module provided by an embodiment of the present disclosure. It should be noted that, in order to clearly illustrate the first busbar 114 and the second busbar 124, Figure 4 The interconnect structure is not drawn in Figure 4 In the figure, a thicker dotted line divides the first end portion 133 and the first collecting portion 134 of a single first branch 131 , and a thicker dotted line divides the second end portion 143 and the second collecting portion 144 of a single second branch 141 .

[0065] In some cases, reference Figure 5 or Figure 6 The back-contact photovoltaic module may further include a conductive portion 105, which covers at least the portion where the first branch 131 and the second branch 141 contact and connect with the pad 132 in the target interconnect structure 112. Thus, even if the widths of the first branch 131 and the second branch 141 gradually decrease near the ends of the target interconnect structure 112, the conductive portion 105 can increase the contact area where the first branch 131 and the second branch 141 contact and connect with the pad 132 in the target interconnect structure 112. This facilitates reducing the contact resistance between the fine grid 101 and the interconnect structure 102 with the conductive portion 105, thereby further improving the back-contact photovoltaic module's efficiency in collecting photogenerated carriers in the cell body 100.

[0066] in, Figure 5 A fifth partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure; Figure 6 This is a sixth partial top view of a back contact photovoltaic module provided by an embodiment of the present disclosure. It should be noted that, in order to clearly illustrate the first fine grid 111 and the second fine grid 121, Figures 3 to 6 In the figure, a first fine grid 111 and a second fine grid 121 are indicated by dashed boxes, and Figures 3 to 6 In the figure, the insulating strip 103 is drawn in perspective; in order to distinguish the two types of interconnection structures 102, Figure 3 、 Figure 5 and Figure 6Different filling methods are used to draw the interconnection structure 102 electrically connected to the first fine gate 111 and the interconnection structure 102 electrically connected to the second fine gate 121, and the interconnection structure 102 electrically connected to the second fine gate 121 is used as a single target interconnection structure 112; in order to facilitate the distinction between the first branch 131 and the second branch 141, Figures 3 to 6 In the figure, different filling methods are used to draw the first branch 131 and the second branch 141.

[0067] Furthermore, in order to facilitate the distinction between the first branch 131 belonging to the first fine gate 111 and the first branch 131 belonging to the second fine gate 121, Figures 3 to 6 Different filling methods are also used to draw the first branch 131 belonging to the first fine gate 111 and the second fine gate 121; in order to facilitate the distinction between the second branch 141 belonging to the first fine gate 111 and the second branch 141 belonging to the second fine gate 121, Figures 3 to 6 Different filling methods are also used to draw the second branches 141 belonging to the first fine gate 111 and the second fine gate 121.

[0068] In other cases, the solder strip extending in the second direction may have a portion not in contact with the solder pad in addition to the portion in contact with the solder pad. The first and second branches that are in contact with the portion of the solder strip not in contact with the solder pad may also be provided with conductive portions at the locations where the first and second branches contact the solder strip, to ensure good electrical connection between the portion of the solder strip not in contact with the solder pad and the fine grid, so that current on the fine grid can be directly transferred to the solder strip without the need for a main grid or solder pad. The main grid includes a first main grid and a second main grid, wherein the first main grid is used to electrically connect to a plurality of first fine grids, and the second main grid is used to electrically connect to a plurality of second fine grids.

[0069] In some cases, reference Figure 4 The fine gate 101 may further include a connecting portion 161 located below the interconnect structure 102 and in contact with the main gate 104. The connecting portion 161 respectively contacts and connects the first branch 131 and the second branch 141 adjacent to each other along the first direction X. In other words, the connecting portion 161 respectively contacts and connects the first branch 131 and the second branch 141 in the same branch group 151. This helps ensure electrical connection between the main gate 104 and the fine gate 101.

[0070] In some cases, reference Figure 4 , along the second direction Y, the width of the connecting portion 161 can be greater than or equal to the minimum width of the first branch 131 to ensure a larger contact area between the main gate 104 and the connecting portion 161. In other cases, the width of the connecting portion can also be greater than the maximum width of the first branch, or the width of the connecting portion can also gradually change along the first direction. It should be noted that, Figure 4 This is merely an example in which the width of the connecting portion 161 is equal to the maximum width of the first branch 131 . In actual applications, an embodiment of the present disclosure does not limit the width of the connecting portion 161 or whether it is gradually changed.

[0071] In other embodiments, reference Figure 7 , Figure 7 This is a seventh partial top view of a back-contact photovoltaic module provided by an embodiment of the present disclosure. The cell body 100 may be a busbar-less back-contact cell. The interconnect structure 102 includes a solder ribbon 122 extending along the second direction Y. Both the first branch 131 and the second branch 141 are in contact with and connected to the solder ribbon 122 in the target interconnect structure 112. As such, the first branch 131 and the second branch 141 each include an end proximate to the solder ribbon 122, the ends being in electrical contact with the solder ribbon 122, and the widths of the ends of both the first branch 131 and the second branch 141 in the second direction Y gradually decrease as they approach the solder ribbon 122.

[0072] In some cases, in conjunction with reference Figure 7 and Figure 8 , Figure 8 This is an eighth partial top view of a back-contact photovoltaic module according to an embodiment of the present disclosure. Interconnection structure 102 includes a solder ribbon 122 extending along a second direction Y. First branch 131 and second branch 141 are both in contact with solder ribbon 122 in target interconnection structure 112. Interconnection structure 102 also includes a solder joint 142 located between first branch 131 and second branch 141. On solder joint 142, solder joint 142 is located. In other words, solder joint 142 connects first branch 131 and second branch 141 adjacent to each other along first direction X. That is, solder joint 142 connects first branch 131 and second branch 141 within the same branch group 151.

[0073] It should be noted that, in order to clearly illustrate the solder joint 142, Figure 8 The interconnect structure is not drawn in Figure 8 In the figure, a thicker dotted line divides the first end portion 133 and the first collecting portion 134 of a single first branch 131 , and a thicker dotted line divides the second end portion 143 and the second collecting portion 144 of a single second branch 141 .

[0074] In some cases, reference Figure 9 or Figure 10The back-contact photovoltaic module may further include a conductive portion 105, which covers at least the contact connection between the first branch 131 and the second branch 141 and the solder ribbon 122 in the target interconnect structure 112. Thus, even if the widths of the first branch 131 and the second branch 141 gradually decrease near the ends of the target interconnect structure 112, the conductive portion 105 can increase the contact area between the first branch 131 and the second branch 141 and the solder ribbon 122 in the target interconnect structure 112. This helps reduce the contact resistance between the fine grid 101 and the solder ribbon 122 with the conductive portion 105, thereby further improving the back-contact photovoltaic module's efficiency in collecting photogenerated carriers in the cell body 100.

[0075] in, Figure 9 A ninth partial top view schematic diagram of a back-contact photovoltaic module provided by an embodiment of the present disclosure; Figure 10 This is a tenth partial top view of a back contact photovoltaic module provided by an embodiment of the present disclosure. It should be noted that, in order to clearly illustrate the first fine grid 111 and the second fine grid 121, Figures 7 to 10 In the figure, a first fine grid 111 and a second fine grid 121 are indicated by dashed boxes, and Figures 7 to 10 In the figure, the insulating strip 103 is drawn in perspective; in order to distinguish the two types of interconnection structures 102, Figure 7 、 Figure 9 and Figure 10 Different filling methods are used to draw the interconnection structure 102 electrically connected to the first fine gate 111 and the interconnection structure 102 electrically connected to the second fine gate 121, and the interconnection structure 102 electrically connected to the second fine gate 121 is used as a single target interconnection structure 112; in order to facilitate the distinction between the first branch 131 and the second branch 141, Figures 7 to 10 In the figure, different filling methods are used to draw the first branch 131 and the second branch 141.

[0076] Furthermore, in order to facilitate the distinction between the first branch 131 belonging to the first fine gate 111 and the first branch 131 belonging to the second fine gate 121, Figures 7 to 10 Different filling methods are also used to draw the first branch 131 belonging to the first fine gate 111 and the second fine gate 121; in order to facilitate the distinction between the second branch 141 belonging to the first fine gate 111 and the second branch 141 belonging to the second fine gate 121, Figures 7 to 10 Different filling methods are also used to draw the second branches 141 belonging to the first fine gate 111 and the second fine gate 121.

[0077] The specific morphology of the conductive portion 105 is described in detail below.

[0078] In some embodiments, reference Figure 5 or Figure 9The first branch 131 is electrically connected to the target interconnect structure 112 at a first intersection, and the second branch 141 is electrically connected to the target interconnect structure 112 at a second intersection. The conductive portion 105 includes a first sub-conductive portion 115 and a second sub-conductive portion 125. The first sub-conductive portion 115 at least covers the first intersection, and the second sub-conductive portion 125 at least covers the second intersection. In other words, there are multiple first intersections and multiple second intersections between any target interconnect structure 112 and a portion of the fine grids 101. Each first intersection is covered by a first sub-conductive portion 115, and each second intersection is covered by a second sub-conductive portion 125. In this way, it is beneficial to specifically reduce the contact resistance at the intersection of the fine grid 101 and the interconnect structure 102, further improve the collection efficiency of the interconnect structure 102 on the current on the fine grid 101, and further improve the photoelectric conversion efficiency of the back-contact photovoltaic module. At the same time, the amount of the conductive portion 105 can be reduced as much as possible to reduce the preparation cost of the back-contact photovoltaic module.

[0079] In some examples, reference Figure 5 or Figure 9 The lengths of the first sub-conductive portion 115 and the second sub-conductive portion 125 in the first direction X can both be 0.5 mm to 1.5 mm. For example, the lengths of the first sub-conductive portion 115 and the second sub-conductive portion 125 in the first direction X can both be 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1.0 mm, 1.1 mm, 1.2 mm, 1.3 mm, or 1.4 mm. It should be noted that in the first direction X, the lengths of the first sub-conductive portion 115 and the second sub-conductive portion 125 can be equal or different.

[0080] In some examples, reference Figure 5 or Figure 9 The widths of the first sub-conductive portion 115 and the second sub-conductive portion 125 in the second direction Y can both be 0.3 mm to 0.5 mm. For example, the widths of the first sub-conductive portion 115 and the second sub-conductive portion 125 in the first direction X can both be 0.33 mm, 0.35 mm, 0.36 mm, 0.4 mm, 0.42 mm, 0.45 mm, 0.46 mm, or 0.48 mm. It should be noted that in the second direction Y, the widths of the first sub-conductive portion 115 and the second sub-conductive portion 125 can be equal or different.

[0081] In other embodiments, reference Figure 6 or Figure 10, the electrical connection between the first branch 131 and the target interconnect structure 112 is the first intersection, and the electrical connection between the second branch 141 and the target interconnect structure 112 is the second intersection; the conductive portion 105 is a conductive strip 135 extending along the first direction X, and the same conductive strip 135 covers the first intersection and the second intersection adjacent to each other along the first direction X. In other words, there are multiple first intersections and multiple second intersections between any target interconnect structure 112 and a portion of the fine grids 101, and a first intersection and a second intersection corresponding to the same branch group 151 are covered by the same conductive strip 135. In this way, it is also beneficial to specifically reduce the contact resistance at the intersection of the fine grid 101 and the interconnect structure 102, further improve the collection efficiency of the interconnect structure 102 on the current on the fine grid 101, and further improve the photoelectric conversion efficiency of the back-contact photovoltaic module.

[0082] In some examples, reference Figure 6 or Figure 10 The length of the conductive strips 135 in the first direction X can be 4 mm to 7 mm. For example, the length of the conductive strips 135 in the first direction X can be 4.2 mm, 4.5 mm, 4.6 mm, 4.8 mm, 5.0 mm, 5.2 mm, 5.5 mm, 5.8 mm, 6.0 mm, 6.2 mm, 6.5 mm, or 6.8 mm. It should be noted that in the first direction X, the lengths of different conductive strips 135 can be equal or different.

[0083] In some examples, reference Figure 6 or Figure 10 The width of the conductive strips 135 in the second direction Y can be 0.3 mm to 0.5 mm. For example, the width of the conductive strips 135 in the second direction Y can be 0.33 mm, 0.35 mm, 0.36 mm, 0.4 mm, 0.42 mm, 0.45 mm, 0.46 mm, or 0.48 mm. It should be noted that in the second direction Y, the widths of different conductive strips 135 can be equal or different.

[0084] In some embodiments, reference Figures 2 to 10 Along the first direction X, the length of the first branch 131 is a first length L1, and the length of the end of the first branch 131 close to the target interconnect structure 112, that is, the first end 133 is a second length L2. The ratio of the second length L2 to the first length L1 is 0.13 to 0.35.

[0085] If the ratio of the second length L2 to the first length L1 is less than 0.13, the length occupied by the first end portion 133 on the first branch 131 is too small. When the insulating strip 103 overflows near the target interconnection structure 112, it is easy to flow further to the area other than the first end portion 133 in the first branch 131, that is, the first collecting portion 134. Furthermore, based on the drainage effect of the first branch 131 on the insulating strip 103 flowing to the first collecting portion 134, the raw material of the insulating strip 103 may also flow to the contact point between the first branch 131 and the target interconnection structure 112, resulting in poor contact between the first branch 131 and the target interconnection structure 112. When the ratio of the length L1 is greater than 0.35, although the first end portion 133 occupies a larger length on the first branch 131, the interval in which the spacing between the insulating strip 103 and the fine grid 101 near the insulating strip 103 gradually increases is larger, which can effectively avoid the problem of poor contact between the first branch 131 and the target interconnection structure 112 caused by the insulating strip 103. However, the first end portion 133 occupies a larger length on the first branch 131, resulting in more areas in the first branch 131 where the width gradually decreases, and the first branch 131 as a whole has a smaller contact area with the battery body 100, which is not conducive to improving the overall collection efficiency of the first branch 131 for the photogenerated carriers generated in the battery body 100. Therefore, the ratio of the second length L2 to the first length L1 is designed to be 0.13 to 0.35, which is beneficial for ensuring that the contact area between the first branch 131 as a whole and the battery body 100 is large enough, and the first branch 131 as a whole has a sufficiently good collection efficiency of the photogenerated carriers generated in the battery body 100, while effectively reducing the risk of poor contact between the target interconnection structure 112 and the first branch 131 caused by the insulating strip 103.

[0086] In some examples, the ratio of the second length L2 to the first length L1 may be 0.15, 0.2, 0.25, 0.3, or 0.35, etc.

[0087] In some embodiments, reference Figures 2 to 10 Along the first direction X, the length of the second branch 141 is a third length L3, and the length of the end of the second branch 141 close to the target interconnect structure 112, that is, the second end 143, is a fourth length L4. The ratio of the fourth length L4 to the third length L3 is 0.13 to 0.35.

[0088] If the ratio of the fourth length L4 to the third length L3 is less than 0.13, the length occupied by the second end portion 143 on the second branch 141 is too small. When the insulating strip 103 overflows near the target interconnection structure 112, it is easy to further flow to the area other than the second end portion 143 in the second branch 141, that is, the second collecting portion 144. Furthermore, based on the drainage effect of the second branch 141 on the insulating strip 103 flowing to the second collecting portion 144, the raw material of the insulating strip 103 may also flow to the contact point between the second branch 141 and the target interconnection structure 112, resulting in poor contact between the second branch 141 and the target interconnection structure 112. The ratio of the three lengths L3 is greater than 0.35. Although the second end portion 143 occupies a large length on the second branch 141, the interval in which the spacing between the insulating strip 103 and the fine grid 101 near the insulating strip 103 gradually increases is large, which can effectively avoid the problem of poor contact between the second branch 141 and the target interconnection structure 112 caused by the insulating strip 103. However, the second end portion 143 occupies a large length on the second branch 141, resulting in more areas in the second branch 141 where the width gradually decreases, and the overall contact area between the second branch 141 and the battery body 100 is small, which is not conducive to improving the overall collection efficiency of the second branch 141 for the photogenerated carriers generated in the battery body 100. Therefore, the ratio of the fourth length L4 to the third length L3 is designed to be 0.13 to 0.35, which is beneficial for ensuring that the overall contact area between the second branch 141 and the battery body 100 is large enough, and the overall collection efficiency of the second branch 141 for the photogenerated carriers generated in the battery body 100 is good enough, while effectively reducing the risk of poor contact between the target interconnection structure 112 and the second branch 141 caused by the insulating strip 103.

[0089] In some examples, the ratio of the fourth length L4 to the third length L3 may be 0.15, 0.2, 0.25, 0.3, or 0.35, etc.

[0090] It should be noted that the length of the region where the width of the first branch 131 and the second branch 141 gradually decreases, that is, the length of the end close to the target interconnect structure 112, includes at least the following situations: in some situations, in the same branch group 151, the ratio of the second length L2 of the first end 133 of the first branch 131 to the first length L1 of the first branch 131 and the ratio of the fourth length L4 of the second end 143 of the second branch 141 to the third length L3 of the second branch 141 may be equal to or different; in other situations, in different branch groups 151, the ratio of the second length L2 of the first end 133 of different first branches 131 to the first length L1 of the first branch 131 may be equal to or different; in still other situations, in different branch groups 151, the ratio of the fourth length L4 of the second end 143 of different second branches 141 to the third length L3 of the second branch 141 may be equal to or different.

[0091] In some examples, reference Figures 2 to 10 The second length L2 of the end of the first branch 131 close to the target interconnect structure 112, that is, the first end 133, can be 1.5mm~3mm. For example, the second length L2 can be 1.7mm, 2.0mm, 2.2mm, 2.4mm, 2.5mm or 2.8mm, etc.

[0092] In some examples, reference Figures 2 to 10 The fourth length L4 of the second branch 141 close to the end of the target interconnect structure 112, that is, the second end 143, can be 1.5mm~3mm. For example, the fourth length L4 can be 1.7mm, 2.0mm, 2.2mm, 2.4mm, 2.5mm or 2.8mm, etc.

[0093] It should be noted that the second length L2 and the fourth length L4 may be equal or different.

[0094] In some embodiments, reference Figures 2 to 10 , along the direction approaching the target interconnect structure 112, the width of at least one of the first branch 131 and the second branch 141 at the end close to the target interconnect structure 112 in the second direction Y gradually decreases from a first preset value to a second preset value; wherein the first preset value is 13μm~19μm, and the second preset value is 3μm~6μm.

[0095] In other words, in some cases, the width of the first branch 131 close to the end of the target interconnect structure 112, that is, the part of the first end 133 with the largest width in the second direction Y, that is, the part farthest from the target interconnect structure 112, can be 13μm to 19μm, and the width of the part of the first end 133 with the smallest width in the second direction Y, that is, the part closest to the target interconnect structure 112 can be 3μm to 6μm; in other cases, the width of the second branch 141 close to the end of the target interconnect structure 112, that is, the part of the second end 143 with the largest width in the second direction Y, that is, the part farthest from the target interconnect structure 112, can be 13μm to 19μm, and the width of the part of the second end 143 with the smallest width in the second direction Y, that is, the part closest to the target interconnect structure 112 can be 3μm to 6μm.

[0096] In some examples, at least one of the first branch 131 and the second branch 141 is close to the end of the target interconnect structure 112, that is, the width of the portion with the largest width in the second direction Y of at least one of the first end 133 and the second end 143 may be 13.5μm, 14μm, 14.5μm, 15μm, 15.5μm, 16μm, 16.5μm, 17μm, 17.5μm, 18μm or 18.5μm, etc., and the width of the portion with the smallest width in the second direction Y may be 3.5μm, 4μm, 4.5μm, 5μm or 5.5μm, etc.

[0097] In some examples, the width of at least one of the ends of first branch 131 and second branch 141, i.e., at least one of first end 133 and second end 143, decreases by 3.3 μm to 10.7 μm per 1 mm length in the second direction Y along the direction approaching target interconnect structure 112. In other words, the width of at least one of first end 133 and second end 143 gradually changes by 3.3 μm / mm to 10.7 μm / mm along the direction approaching target interconnect structure 112. For example, the gradual change in width may be 3.5 μm / mm, 4 μm / mm, 4.5 μm / mm, 5 μm / mm, 5.5 μm / mm, 6 μm / mm, 6.5 μm / mm, 7 μm / mm, 7.5 μm / mm, 8 μm / mm, 8.5 μm / mm, 9 μm / mm, 9.5 μm / mm, 10 μm / mm, or 10.5 μm / mm.

[0098] It should be noted that the width gradient of the end portion of the first branch 131 close to the target interconnection structure 112 in the second direction Y may be equal to or different from the width gradient of the end portion of the second branch 141 close to the target interconnection structure 112 in the second direction Y.

[0099] To summarize, any fine gate 101 designed to be electrically connected to the target interconnect structure 112 includes a first branch 131 and a second branch 141, and along the direction approaching the target interconnect structure 112, the widths of the ends of the first branch 131 and the second branch 141 in the second direction Y gradually decrease, and the insulating strip 103 is located on any fine gate 101 electrically insulated from the target interconnect structure 112. In this way, along the direction close to the target interconnection structure 112, not only the spacing between the insulating strip 103 adjacent to the first branch 131 along the second direction Y and the first branch 131 gradually increases, but also the spacing between the insulating strip 103 adjacent to the second branch 141 along the second direction Y and the second branch 141 gradually increases. In the process of preparing the insulating strip 103, when the insulating material, such as insulating glue, overflows at the end near the target interconnection structure 112, it is beneficial to avoid the overflowed insulating strip 103 covering the fine grid 101 that needs to be electrically connected to the target interconnection structure 112, avoiding the problem of poor contact between the target interconnection structure 112 and the fine grid 101, and ensuring the good current collection efficiency of the target interconnection structure 112 on the fine grid 101, thereby improving the photoelectric conversion efficiency of the back-contact photovoltaic module. In addition, the widths of the ends of the first branch 131 and the second branch 141 in the second direction Y gradually decrease along the direction approaching the target interconnection structure 112, which is beneficial for reducing the preparation cost of the fine gate 101 while ensuring good collection efficiency of the current on the fine gate 101 by the target interconnection structure 112.

[0100] Those skilled in the art will appreciate that the above-described embodiments are specific examples for implementing the present disclosure, and in actual applications, various changes may be made to them in form and detail without departing from the spirit and scope of the embodiments of the present disclosure. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the embodiments of the present disclosure. Therefore, the scope of protection of the embodiments of the present disclosure shall be based on the scope defined in the claims.

Claims

1. A back contact photovoltaic module, characterized in that: include: A battery body, wherein the back surface of the battery body includes a plurality of positioning areas arranged at intervals along a first direction, and the back surface is provided with first fine grids and second fine grids arranged alternately along a second direction; an interconnection structure, wherein one of the interconnection structures is located on one of the positioning regions, and a single interconnection structure is electrically connected to one of the plurality of first fine gates and the plurality of second fine gates; A single interconnect structure electrically connected to a fine gate is used as a target interconnect structure, wherein any fine gate electrically connected to the target interconnect structure includes a first branch and a second branch, wherein the first branch and the second branch respectively connect two sides of the target interconnect structure along the first direction, wherein the first branch and the second branch each include an end portion close to the target interconnect structure, and wherein the widths of the ends of the first branch and the second branch in the second direction gradually decrease along a direction close to the target interconnect structure, and the fine gate is one of the first fine gate and the second fine gate; The insulating strip is located on any of the fine gates electrically insulated from the target interconnect structure, and the spacing between the insulating strip and the fine gates close to the insulating strip gradually increases along the direction approaching the target interconnect structure.

2. The back contact photovoltaic module according to claim 1, characterized in that: Also includes: A first busbar and a second busbar are alternately arranged along the first direction, one of the first busbar or the second busbar is provided on a single positioning area, the interconnect structure includes a welding strip extending along the second direction and at least two welding pads arranged at intervals along the second direction, the welding pads are located between the welding strip and one of the first busbar or the second busbar, and the first branch and the second branch are both in contact with and connected to the welding pad in the target interconnect structure; and / or, The interconnect structure includes a soldering ribbon extending along the second direction, and both the first branch and the second branch are in contact with and connected to the soldering ribbon in the target interconnect structure.

3. The back contact photovoltaic module according to claim 2, characterized in that: Also includes: A conductive portion, the conductive portion at least covers the contact connection between the first branch and the second branch and the pad in the target interconnect structure, and / or the conductive portion at least covers the contact connection between the first branch and the second branch and the solder strip in the target interconnect structure.

4. The back contact photovoltaic module according to claim 3, characterized in that: The electrical connection between the first branch and the target interconnect structure is a first intersection, and the electrical connection between the second branch and the target interconnect structure is a second intersection; the conductive portion includes a first sub-conductive portion and a second sub-conductive portion, the first sub-conductive portion at least covers the first intersection, and the second sub-conductive portion at least covers the second intersection.

5. The back contact photovoltaic module according to claim 4, characterized in that: The lengths of the first sub-conductive portion and the second sub-conductive portion in the first direction are both 0.5 mm to 1.5 mm, and the widths of the first sub-conductive portion and the second sub-conductive portion in the second direction are both 0.3 mm to 0.5 mm.

6. The back contact photovoltaic module according to claim 3, characterized in that: The electrical connection between the first branch and the target interconnect structure is a first intersection, and the electrical connection between the second branch and the target interconnect structure is a second intersection; the conductive portion is a conductive strip extending along the first direction, and the same conductive strip covers the first intersection and the second intersection adjacent to each other along the first direction.

7. The back contact photovoltaic module according to claim 6, characterized in that: The length of the conductive strips in the first direction is 4 mm to 7 mm, and the width of the conductive strips in the second direction is 0.3 mm to 0.5 mm.

8. The back-contact photovoltaic module according to any one of claims 1 to 3, characterized in that: Along the first direction, the length of the first branch is a first length, the length of the end of the first branch close to the target interconnect structure is a second length, and the ratio of the second length to the first length is 0.13 to 0.35; and / or, Along the first direction, the length of the second branch is a third length, the length of the end of the second branch close to the target interconnect structure is a fourth length, and a ratio of the fourth length to the third length is 0.13-0.

35.

9. The back contact photovoltaic module according to claim 8, characterized in that: The second length is 1.5 mm to 3 mm; and / or the fourth length is 1.5 mm to 3 mm.

10. The back-contact photovoltaic module according to any one of claims 1 to 3, characterized in that: Along the direction approaching the target interconnect structure, a width of an end portion of at least one of the first branch and the second branch close to the target interconnect structure in the second direction gradually decreases from a first preset value to a second preset value; The first preset value is 13 μm to 19 μm, and the second preset value is 3 μm to 6 μm.

Citation Information

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