Packaging structure, preparation method thereof and sensor

Abstract

A packaging structure applied to an MEMS chip, the packaging structure comprising: an insulating dielectric layer (1) having a first surface and a second surface opposite to each other, at least one first accommodating space penetrating from the first surface to the second surface being formed on the insulating dielectric layer (1); the conductive columns (2) are in one-to-one correspondence with the first containing spaces and located in the first containing spaces, the conductive columns (2) are made of non-metal conductive materials, and the absolute value of the difference between the thermal expansion coefficients of the conductive columns (2) and the thermal expansion coefficients of the insulating medium layers (1) is smaller than or equal to 8 * 10 <-6 > / DEG C. The invention also discloses a preparation method of the packaging structure and a sensor.

Description

Packaging structure, manufacturing method thereof, and sensor Technical Field

[0001] The present invention relates to the technical field of micro-electromechanical systems, and in particular to a packaging structure, a preparation method thereof, and a sensor. Background Art

[0002] With the continuous advancement of semiconductor technology, microelectromechanical systems (MEMS) chips, using microelectromechanical systems (MEMS) technology, have attracted significant attention. These chips are typically packaged in a package, which effectively implements the MEMS chip's I / O interface (internal and external interconnections of electrical signals), protects its internal structure, isolates it from the environment, and provides a stable and reliable operating environment. This packaging structure is also crucial for the transition from laboratory prototype to production.

[0003] Summary of the Invention

[0004] In a first aspect, an embodiment of the present disclosure provides a packaging structure applied to a MEMS chip, comprising:

[0005] an insulating dielectric layer having a first surface and a second surface opposite to each other, wherein at least one first accommodation space is formed on the insulating dielectric layer and extends from the first surface to the second surface;

[0006] At least one conductive pillar corresponding to each of the first accommodation spaces, the conductive pillar being located in the corresponding first accommodation space, the conductive pillar being made of a non-metallic conductive material, and the absolute value of the difference between the thermal expansion coefficient of the conductive pillar and the insulating dielectric layer being less than or equal to 8×10 -6 / ℃;

[0007] The at least one conductive pillar includes: at least one first conductive pillar, wherein two end surfaces of the first conductive pillar are flush with the first surface and the second surface respectively.

[0008] In some embodiments, the at least one conductive pillar further comprises: a second conductive pillar, wherein an end surface of the second conductive pillar is flush with the second surface;

[0009] The other end surface of the second conductive column is flush with the first surface;

[0010] Alternatively, the other end surface of the second conductive column is located between the plane where the first surface is located and the plane where the second surface is located.

[0011] In some embodiments, at least one second accommodation space is formed on the insulating dielectric layer, extending from the first surface to the second surface;

[0012] The packaging structure further includes a filling column, which is located in the corresponding second accommodation space, with one end surface of the filling column flush with the second surface and the other end surface of the filling column located between the plane of the first surface and the plane of the second surface.

[0013] In some embodiments, the material of the filling pillar is the same as that of the conductive pillar.

[0014] In some embodiments, the package structure further comprises:

[0015] At least one sealing ring is located on one side of the first surface, and the orthographic projection of the conductive pillar on the first surface is located within a region enclosed by the orthographic projection of the corresponding sealing ring on the first surface.

[0016] In some embodiments, the first conductive pillar is configured with a corresponding first conductive connection terminal, and the first conductive connection terminal is connected to the end surface of the corresponding first conductive pillar that is flush with the first surface;

[0017] A thickness of the first conductive connection terminal in a direction perpendicular to the first surface is equal to a thickness of the sealing ring in a direction perpendicular to the first surface.

[0018] In some embodiments, the first conductive connection terminal and the sealing ring are made of the same material and are provided in the same layer.

[0019] In some embodiments, there are two sealing rings, and the edges of the two sealing rings adjacent to each other are connected as one.

[0020] In some embodiments, at least one third accommodation space corresponding to each of the sealing rings is further formed on the insulating dielectric layer, and the third accommodation space is connected to the first surface;

[0021] A connecting column is provided in the third accommodating space. One end surface of the connecting column is flush with the first surface. The end surface of the connecting column flush with the first surface contacts the corresponding sealing ring.

[0022] In some embodiments, the third accommodation space is further connected to the second surface, and the other end surface of the connecting column is flush with the second surface.

[0023] In some embodiments, the material of the connecting pillar is the same as that of the conductive pillar.

[0024] In some embodiments, the package structure further comprises:

[0025] A protective layer is located on one side of the second surface, and is provided with at least one through hole corresponding to the conductive column. The through hole is connected to the end surface of the corresponding conductive column that is flush with the second plane.

[0026] In some embodiments, the conductive pillar is configured as a corresponding second conductive connection terminal, the second conductive connection terminal is located in the through hole corresponding to the conductive pillar, and the second conductive connection terminal is connected to the end surface of the corresponding conductive pillar that is flush with the second surface;

[0027] A thickness of the second conductive connection terminal in a direction perpendicular to the second surface is greater than a thickness of the protective layer in a direction perpendicular to the second surface.

[0028] In some embodiments, the material of the insulating dielectric layer includes: glass;

[0029] The conductive pillar is made of silicon.

[0030] In a second aspect, an embodiment of the present disclosure further provides a method for preparing a package structure, which can be used to prepare the package structure in the first aspect, and the preparation method includes:

[0031] An insulating dielectric layer and a conductive pillar are formed, wherein the insulating dielectric layer has a first surface and a second surface opposite to each other, and at least one first accommodation space is formed on the insulating dielectric layer, extending from the first surface to the second surface. The conductive pillars correspond to the first accommodation spaces one by one and are located in the corresponding first accommodation spaces. The at least one conductive pillar comprises: at least one first conductive pillar, wherein two end surfaces of the first conductive pillar are flush with the first surface and the second surface, respectively; the material of the first conductive pillar comprises: a non-metallic conductive material; and the absolute value of the difference in thermal expansion coefficient between the first conductive pillar and the insulating dielectric layer is less than or equal to 8×10 -6 / ℃.

[0032] In some embodiments, the steps of forming the insulating dielectric layer and the conductive pillars specifically include:

[0033] Providing a non-metallic conductive material substrate, wherein the non-metallic conductive material substrate is divided into a first portion and a second portion stacked along a thickness direction;

[0034] performing a patterning process on the first portion to form at least one pillar pattern, wherein the at least one pillar pattern includes a preliminary pattern of at least one first conductive pillar;

[0035] Fixing an insulating dielectric material sheet to an end of the columnar pattern away from the second portion to obtain an assembly;

[0036] performing a reflow process on the assembly so that a portion of the insulating dielectric material in the insulating dielectric material sheet reflows to the side of the columnar pattern to obtain an original substrate;

[0037] The original substrate is double-sided polished to expose two end faces of the columnar pattern to obtain a packaging cover plate, wherein the insulating dielectric material in the packaging cover plate serves as the insulating dielectric layer, and the columnar pattern in the packaging cover plate includes the first conductive column.

[0038] In some embodiments, in the step of performing a patterning process on the first portion to form at least one pillar pattern, the at least one pillar pattern formed further includes a preliminary pattern of the second conductive pillar;

[0039] The columnar pattern in the package cover also includes the second conductive column.

[0040] In some embodiments, after the step of performing double-side polishing on the original substrate, the method further includes:

[0041] A portion of the second conductive pillar close to the first surface is etched so that an end surface of the second conductive pillar close to the second surface is located between a plane where the first surface is located and a plane where the second surface is located.

[0042] In some embodiments, in the step of performing a patterning process on the first portion to form at least one columnar pattern, the at least one columnar pattern formed further includes a preliminary pattern of the filling column;

[0043] The columnar pattern in the package cover also includes the filling column.

[0044] In some embodiments, after the step of performing double-side polishing on the original substrate, the method further includes:

[0045] forming a sealing material film on one side of the first surface;

[0046] The sealing material film is patterned to obtain a pattern of at least one sealing ring, wherein the orthographic projection of the conductive column on the first surface is located within a region enclosed by the orthographic projection of the corresponding sealing ring on the first surface.

[0047] In some embodiments, the first conductive pillar is configured with a corresponding first conductive connection terminal, and the first conductive connection terminal is connected to the end surface of the corresponding first conductive pillar that is flush with the first surface;

[0048] The sealing material includes a conductive material;

[0049] In the step of patterning the sealing material film, the pattern of the sealing ring and the pattern of the first conductive connection terminal are obtained simultaneously.

[0050] In some embodiments, in the step of performing a patterning process on the first portion to form at least one columnar pattern, the at least one columnar pattern formed further includes a preliminary pattern of connecting pillars;

[0051] The columnar pattern in the package cover plate further includes the connecting column, and the end surface of the connecting column that is flush with the first surface is in contact with the corresponding sealing ring.

[0052] In some embodiments, the preparation method further comprises:

[0053] forming a protective layer on one side of the second surface, wherein the protective layer is provided with at least one through hole corresponding to the conductive pillar, the through hole being connected to an end surface of the corresponding conductive pillar that is flush with the second plane;

[0054] A second conductive connection terminal is formed, the second conductive connection terminal is located in a through hole corresponding to the conductive column, and the second conductive connection terminal is connected to the end surface of the corresponding conductive column that is flush with the second surface, and the thickness of the second conductive connection terminal in a direction perpendicular to the second surface is greater than the thickness of the protective layer in a direction perpendicular to the second surface.

[0055] In a third aspect, an embodiment of the present disclosure further provides a sensor, which includes: a MEMS chip and a packaging structure for packaging the MEMS chip, wherein the packaging structure adopts the packaging structure provided in the first aspect.

[0056] In some embodiments, the MEMS chip includes: a pressure sensitive chip.

[0057] In some embodiments, the pressure sensitive chip includes:

[0058] a first substrate, wherein a pressure-sensing cavity is formed on the first substrate;

[0059] a pressure-sensitive film, located on one side of the first substrate and connected to the pressure-sensitive cavity;

[0060] The pressure detection functional structure is located on a side of the pressure-sensitive film away from the pressure-sensitive cavity and is connected to the pressure-sensitive film.

[0061] In some embodiments, the first substrate is divided into a pressure detection area and a pressure reference area;

[0062] The pressure sensing cavity, the pressure sensing film and the pressure detection functional structure are provided in the pressure detection area;

[0063] The pressure reference area is provided with the pressure detection functional structure but is not provided with the pressure sensing cavity and the pressure sensing film.

[0064] In some embodiments, the pressure detection functional structure includes: a piezoresistor or a capacitor plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0065] FIG1 is a schematic cross-sectional view of a sensor involved in the related art;

[0066] FIG2 is a schematic top view of a packaging structure provided by an embodiment of the present disclosure;

[0067] FIG3 is a bottom view of a packaging structure provided by an embodiment of the present disclosure;

[0068] FIG4A is a schematic cross-sectional view taken along the line AA′ in FIG2 ;

[0069] FIG4B is another schematic cross-sectional view taken along the line AA′ in FIG2 ;

[0070] FIG5 is a schematic top view of a MEMS chip packaged in the packaging structure shown in FIG2 in an embodiment of the present disclosure;

[0071] FIG6 is another schematic top view of the packaging structure provided by an embodiment of the present disclosure;

[0072] FIG7 is another bottom view schematic diagram of the packaging structure provided by an embodiment of the present disclosure;

[0073] FIG8A is a schematic cross-sectional view taken along the line BB' in FIG6;

[0074] FIG8B is another schematic cross-sectional view taken along the line BB' in FIG6;

[0075] FIG9 is a schematic top view of a MEMS chip packaged in the packaging structure shown in FIG6 in an embodiment of the present disclosure;

[0076] FIG10 is another schematic top view of a packaging structure provided by an embodiment of the present disclosure;

[0077] FIG11 is a schematic cross-sectional view taken along the CC' line in FIG10;

[0078] FIG12 is another schematic top view of a packaging structure provided by an embodiment of the present disclosure;

[0079] FIG13 is a schematic cross-sectional view of FIG12 along the DD' direction;

[0080] FIG14A is a schematic diagram of a process for preparing a packaging structure according to an embodiment of the present disclosure;

[0081] FIG14B is a schematic flow chart of a method for forming an insulating dielectric layer and a conductive pillar based on a reflow process in an embodiment of the present disclosure;

[0082] FIG15 is a schematic diagram of a process flow structure corresponding to the method shown in FIG14B ;

[0083] FIG16 is a schematic diagram of another process flow structure corresponding to the method shown in FIG14B ;

[0084] FIG17 is a flow chart of another method for preparing a packaging structure provided by an embodiment of the present disclosure;

[0085] FIG18 is a schematic diagram of a process flow structure corresponding to the method shown in FIG17 ;

[0086] FIG19 is a schematic diagram of another process flow structure corresponding to the method shown in FIG17 ;

[0087] FIG20 is a flow chart of another method for preparing a packaging structure provided by an embodiment of the present disclosure;

[0088] FIG21 is a schematic diagram of a process flow structure corresponding to the method shown in FIG20 ;

[0089] FIG22 is a schematic diagram of another process flow structure corresponding to the method shown in FIG20 ;

[0090] FIG23 is a schematic cross-sectional view of a sensor provided by an embodiment of the present disclosure;

[0091] FIG24 is another cross-sectional schematic diagram of a sensor provided by the present disclosure;

[0092] FIG25 is another cross-sectional schematic diagram of a sensor provided by an embodiment of the present disclosure;

[0093] FIG26 is another cross-sectional schematic diagram of the sensor provided by the present disclosure. DETAILED DESCRIPTION

[0094] To enable those skilled in the art to better understand the technical solution of the present invention, a packaging structure for a MEMS chip, a preparation method thereof, and a sensor provided by the present invention are described in detail below with reference to the accompanying drawings.

[0095] The present disclosure will be described in more detail below with reference to the accompanying drawings. In each of the accompanying drawings, identical elements are represented by similar reference numerals. For the sake of clarity, the various parts in the accompanying drawings are not all drawn to scale. In addition, certain well-known parts may not be shown in the drawings.

[0096] Many specific details of the present disclosure are described below, such as component structures, materials, dimensions, processing techniques, and technologies, to provide a clearer understanding of the present disclosure. However, as will be appreciated by those skilled in the art, the present disclosure may be implemented without following these specific details.

[0097] The terms “first”, “second” and similar terms used in the embodiments of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components.

[0098] Likewise, words like “include” or “comprising” mean that the elements or items preceding the word include the elements or items listed after the word and their equivalents, but do not exclude other elements or items.

[0099] As used in the embodiments of the present disclosure, "about" or "approximately" include the stated value and mean within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "about" can mean that the difference from the stated value is within one or more standard deviations, or within ±30%, 20%, 10%, 5%.

[0100] In addition, in the expression of the range M to N in the embodiment of the present disclosure, the limited range includes two endpoint values, M and N.

[0101] The patterning process in the embodiment of the present disclosure refers to processes including photoresist coating, exposure, development, film etching, photoresist stripping, etc. During the film etching process, a matching etching process can be selected according to the film material to be patterned.

[0102] In addition, the MEMS chip in the embodiments of the present disclosure can be any MEMS chip, such as a pressure-sensitive MEMS chip, a temperature-sensitive MEMS chip, a light-sensitive MEMS chip, an acoustic-wave-sensitive MEMS chip, etc., and the present disclosure does not limit this. In the following description, the MEMS chip will be described as a pressure-sensitive MEMS chip as an example.

[0103] FIG1 is a schematic cross-sectional view of a sensor involved in related art. As shown in FIG1 , the sensor includes a MEMS chip and a packaging structure 200 for packaging the MEMS chip 100. The packaging structure 200 includes a glass substrate 201 or a silicon substrate 201. Through-holes (vias) are formed on the glass substrate 201 or the silicon substrate 201 using a through-glass via (TGV) or through-silicon via (TSV) process. The vias are then filled with metal material to form metal pillars, thereby forming a packaging cover. Multiple metal electrodes 203 corresponding to the metal pillars are formed on one side of the packaging cover. The metal electrodes 203 are connected to the second ends of the corresponding metal pillars. For electrical conductivity, the metal pillars are generally made of copper, i.e., the metal pillars are copper pillars 202.

[0104] When packaging the MEMS chip 100 , the first end of the copper pillar 202 is bonded and fixed to the pressure detection functional structure on the MEMS chip 100 through a bonding process, so as to achieve packaging of the MEMS chip 100 .

[0105] However, in actual applications, it has been found that the preparation of the package cover plate composed of the glass substrate 201 / silicon substrate 201 + copper pillars 202 involved in the related art requires the use of multiple complex processes such as TGV / TSV through-hole technology, physical vapor deposition technology of metal materials, photolithography technology, and electroplating technology, which is difficult to manufacture and has high costs.

[0106] In addition, the process of forming the copper pillar 202 in the via hole of the glass substrate 201 / silicon substrate 201 will form a high temperature environment, and the glass (thermal expansion coefficient of about 7.0×10 -6 / ℃, the thermal expansion coefficient of high boron glass is about 3.2×10 -6 / ℃) or silicon (thermal expansion coefficient of about 2.5×10 -6 / ℃) and copper (thermal expansion coefficient is about 17.5×10 -6 Therefore, during the production process, large stress will be generated between the copper pillar 202 and the glass substrate 201 / silicon substrate 201, resulting in poor product consistency and stability of the package cover plate finally produced.

[0107] In order to effectively improve at least one of the technical problems existing in the related art, the embodiment of the present disclosure provides a packaging structure that can be applied to MEMS chips. The packaging structure can be prepared using simple processes and is low in cost. At the same time, it can effectively reduce the internal stress of the packaging structure and improve the consistency and stability of the product.

[0108] FIG2 is a schematic top view of a packaging structure provided in an embodiment of the present disclosure. FIG3 is a schematic bottom view of a packaging structure provided in an embodiment of the present disclosure. FIG4A is a schematic cross-sectional view taken along the direction A-A' in FIG2. FIG4B is another schematic cross-sectional view taken along the direction A-A' in FIG2. FIG5 is a schematic top view of a MEMS chip encapsulated by the packaging structure shown in FIG2 in an embodiment of the present disclosure. As shown in FIG2 to FIG5, the packaging structure includes: a packaging cover plate CP, and the packaging cover plate CP includes: an insulating dielectric layer 1 and at least one conductive column.

[0109] The insulating dielectric layer 1 has a first surface P1 and a second surface P2 that are opposite to each other. At least one first accommodation space is formed on the insulating dielectric layer and extends from the first surface P1 to the second surface P2.

[0110] The conductive pillars correspond to the first accommodation spaces one by one, and the conductive pillars are located in the corresponding first accommodation spaces. The materials of the conductive pillars include: non-metallic conductive materials, and the absolute value of the difference in thermal expansion coefficient between the conductive pillars and the insulating dielectric layer 1 is less than or equal to 8×10 -6 / ℃; at least one conductive column includes: at least one first conductive column 2, two end surfaces of the first conductive column 2 are respectively flush with the first surface P1 and the second surface P2.

[0111] It should be noted that the embodiment in FIG. 1 shows a case where four first conductive pillars 2 are provided in the package cover plate CP. This case is merely illustrative and does not limit the technical solution of the present disclosure.

[0112] Different from the related art which uses copper pillars as conductive pillars, the embodiments of the present disclosure use non-metallic conductive materials to prepare the conductive pillars, and the absolute value of the difference in thermal expansion coefficient between the conductive pillars and the insulating dielectric layer 1 is controlled to be less than or equal to 8×10 -6 / °C. This allows the package cover plate CP to be manufactured using the insulating dielectric material reflow process, reducing manufacturing complexity and cost. Furthermore, the difference in thermal expansion coefficients between the conductive pillars and the insulating dielectric layer 1 is minimal during production, minimizing the internal stress generated by the high-temperature environment. This contributes to product consistency and stability. The specific details will be described in detail in the corresponding preparation method section below.

[0113] In some embodiments, the insulating dielectric layer 1 comprises glass, and the conductive pillars comprise silicon. During the manufacturing process, the package cover plate CP can be formed using a glass reflow process. Because the difference in thermal expansion coefficients between glass and silicon is relatively small, the internal stress generated between the glass and silicon during the glass reflow process is also relatively small.

[0114] In addition, considering that the conductive pillars need to have better conductive properties, the material of the conductive pillars in the embodiments of the present disclosure can be low-resistance silicon, whose resistivity is approximately 0.002Ω·cm to 0.005Ω·cm.

[0115] As shown in FIG4B , in some embodiments, at least one second accommodation space is formed on the insulating dielectric layer 1, extending from the first surface P1 to the second surface P2; the packaging structure further includes a filling column 6, which is located in the corresponding second accommodation space, with one end face of the filling column 6 flush with the second surface P2, and the other end face of the filling column 6 located between the plane where the first surface P1 is located and the plane where the second surface P2 is located. In the embodiment of the present disclosure, by providing the above-mentioned filling column 6, and setting one end face of the filling column 6 between the plane where the first surface P1 is located and the plane where the second surface P2 is located, a groove structure is formed. Such a design allows the packaging structure to have a certain distance between the MEMS chip and the packaging cover plate CP at the location where the filling column 6 is located after the MEMS chip is packaged, thereby providing a certain deformation space for the MEMS chip. This will be described in detail later with reference to specific examples.

[0116] In some embodiments, the material of the filling pillars 6 is the same as that of the conductive pillars. Therefore, the filling pillars 6 and the conductive pillars can be prepared simultaneously based on the same process, which is beneficial to reducing process steps, shortening production cycle, and reducing production costs.

[0117] In some embodiments, the packaging structure further includes at least one sealing ring 8 located on one side of the first surface P1, such that the orthographic projection of the conductive pillar on the first surface P1 is located within the area enclosed by the orthographic projection of the corresponding sealing ring 8 on the first surface P1. When the packaging structure is used to package a MEMS chip, the sealing ring 8 can secure the package cover plate CP to the MEMS chip. Furthermore, the sealing ring 8 can form a sealed cavity between the package cover plate CP and the MEMS chip, thereby preventing interference with the MEMS chip from the external environment.

[0118] In some embodiments, the first conductive column 2 is configured with a corresponding first conductive connection terminal 3, and the first conductive connection terminal 3 is connected to the end surface of the corresponding first conductive column 2 that is flush with the first surface P1; the thickness of the first conductive connection terminal 3 in the direction perpendicular to the first surface P1 is equal to the thickness of the sealing ring 8 in the direction perpendicular to the first surface P1.

[0119] In some embodiments, the sealing ring 8 is made of a conductive material, and the first conductive connection terminals 3 are made of the same material and are disposed in the same layer as the sealing ring 8. Therefore, the sealing ring 8 and the first conductive connection terminals 3 can be manufactured simultaneously using the same process, which helps reduce process steps, shorten production cycles, and lower production costs.

[0120] As an example, the sealing ring 8 and the first conductive connection terminal 3 are made of metal materials, such as gold, silver, copper, etc.

[0121] In some embodiments, at least one third accommodating space corresponding to the sealing ring 8 is formed on the insulating dielectric layer 1, and the third accommodating space is connected to the first surface P1; a connecting column 7 is provided in the third accommodating space, and one end face of the connecting column 7 is flush with the first surface P1, and the end face of the connecting column 7 flush with the first surface P1 is in contact with the corresponding sealing ring 8.

[0122] In some cases, the bonding strength between the sealing ring 8 and the insulating dielectric layer 1 is poor, making it easy for the sealing ring 8 to separate from the packaging cover plate CP. For example, when the insulating dielectric layer 1 is made of glass and the sealing ring 8 is made of metal, the bonding strength between the metal material and the glass is poor, that is, the bonding strength between the sealing ring 8 and the insulating dielectric layer 1 is poor. To improve this problem, in the embodiment of the present disclosure, a third accommodating space is provided on the insulating dielectric layer 1, and a connecting column 7 is provided in the third accommodating space. The material of the connecting column 7 is selected to be a material that can form a strong bond with the sealing ring 8, and the sealing ring 8 is in contact with the connecting column 7 instead of in contact with the insulating dielectric layer 1. In this way, the bonding strength between the sealing ring 8 and the packaging cover plate CP can be greatly improved.

[0123] In some embodiments, the third accommodation space is also connected to the second surface P2, and the other end surface of the connecting column 7 is flush with the second surface P2.

[0124] In some embodiments, the connecting pillars 7 are made of the same material as the conductive pillars. Therefore, the connecting pillars 7 and the conductive pillars can be manufactured simultaneously using the same process, which reduces process steps, shortens production cycles, and lowers production costs. For example, the connecting pillars 7 and the conductive pillars are both made of silicon, while the sealing ring 8 is made of a metal material. The metal and silicon materials provide a strong bond.

[0125] In some embodiments, the package structure further includes a protective layer 5 positioned on one side of the second surface P2. Protective layer 5 is provided with at least one through-hole corresponding to a conductive post, the through-hole communicating with an end surface of the corresponding conductive post that is flush with the second plane. While at least partially exposing the end surface of the conductive post that is flush with the second plane (to facilitate signal transmission), protective layer 5 effectively protects the second surface P2 of the package cover plate CP, thereby effectively extending the product's service life.

[0126] In some embodiments, the conductive pillars are configured as corresponding second conductive connection terminals 4. The second conductive connection terminals 4 are located within the corresponding through-holes of the conductive pillars and are connected to the end surfaces of the corresponding conductive pillars that are flush with the second surface P2. The thickness of the second conductive connection terminals 4 in a direction perpendicular to the second surface P2 is greater than the thickness of the protective layer 5 in a direction perpendicular to the second surface P2. In other words, the second conductive connection terminals 4 protrude from the side of the protective layer 5 away from the package cover plate CP. This design allows the MEMS chip to be packaged into a corresponding sensor, and then the sensor can be flip-chip bonded to the driver substrate.

[0127] As a specific example, metal solder paste can be applied to the end surface of each conductive pillar that is flush with the second surface P2, and then the second conductive connection terminal 4 (made of metal) can be formed by thermal reflow. When the sensor is combined with the drive substrate, the second conductive connection terminal 4 can be flip-chip soldered to the corresponding terminal on the drive substrate. Compared with the conventional method of using gold wire to mount the sensor on the drive substrate, the sensor is flip-chip soldered to the drive substrate in the present disclosure, which can effectively reduce the sensor packaging size and packaging cost.

[0128] Referring to FIG5 , as a specific example, the MEMS chip 400 packaged in the packaging structure shown in FIG2 is a piezoresistive pressure-sensitive chip, which includes four piezoresistors 404 a, and the four piezoresistors 404 a together constitute a Wheatstone bridge; four conductive connection areas V are configured corresponding to the four piezoresistors 404 a, and the four first conductive connection terminals 3 shown in FIG2 are respectively connected to the four conductive connection areas V.

[0129] FIG6 is another schematic top view of the packaging structure provided in an embodiment of the present disclosure. FIG7 is another schematic bottom view of the packaging structure provided in an embodiment of the present disclosure. FIG8A is a schematic cross-sectional view taken along the direction B-B' in FIG6. FIG8B is another schematic cross-sectional view taken along the direction B-B' in FIG6. FIG9 is a schematic top view of the MEMS chip packaged by the packaging structure shown in FIG6 in an embodiment of the present disclosure. As shown in FIG6 to FIG9, unlike the previous embodiments, the embodiments shown in FIG6 to FIG8B include not only a first conductive column 2 but also a second conductive column 10, wherein one end face of the second conductive column 10 is flush with the second surface P2; the other end face of the second conductive column 10 is flush with the first surface P1 (as shown in FIG8A); or, the other end face of the second conductive column 10 is located between the plane where the first surface P1 is located and the plane where the second surface P2 is located (as shown in FIG8B).

[0130] Unlike the first conductive pillar 2, which is used to electrically connect to the MEMS chip, the second conductive pillar 10 in the present disclosure is not electrically connected to the MEMS chip. Instead, it is used to form a detection capacitance between a capacitor plate in the MEMS chip, thereby enabling correlation detection based on changes in the detection capacitance. This will be described in detail later with reference to specific examples.

[0131] In the embodiments shown in Figures 6 to 8B, the packaging structure may also include at least one of the sealing ring 8, the first conductive connection terminal 3, the connecting column 7, the protective layer 5, and the second conductive connection terminal 4 involved in the previous embodiments. For the specific description of these structures, please refer to the contents of the previous embodiments and will not be repeated here.

[0132] Referring to FIG9 , as a specific example, the MEMS chip 400 packaged in the packaging structure shown in FIG6 is a capacitive pressure-sensitive chip, which includes a capacitor plate 404b, and a conductive connection area V is configured corresponding to each capacitor plate 404b. A first conductive connection terminal shown in FIG6 is connected to the conductive connection area V.

[0133] Figure 10 is another schematic top view of the packaging structure provided by an embodiment of the present disclosure. Figure 11 is a schematic cross-sectional view taken along the C-C' direction in Figure 10. Figure 12 is another schematic top view of the packaging structure provided by an embodiment of the present disclosure. Figure 13 is a schematic cross-sectional view taken along the D-D' direction in Figure 12. As shown in Figures 10 to 13, in some embodiments, the entire packaging structure includes two packaging areas Q1 and Q2 (each packaging area Q1 and Q2 can be used to package a MEMS chip), and each packaging area Q1 and Q2 corresponds to a sealing ring 8, that is, the packaging structure includes two sealing rings 8. In some embodiments, the edges of the two sealing rings 8 that are close to each other are connected as one.

[0134] Of course, those skilled in the art will appreciate that the number of package areas Q1 and Q2 in the package structure of the embodiment of the present disclosure can also be 3, 4, or even more. Accordingly, the number of sealing rings 8 can be 3, 4, or even more. When the number of sealing rings 8 is greater than or equal to 2, whether different sealing rings 8 are in contact with each other is not limited by the present disclosure.

[0135] Based on the same inventive concept, the present disclosure also provides a method for preparing a package structure, which can be used to prepare the package structure provided in the previous embodiments. FIG14A is a flow chart of a method for preparing a package structure provided in the present disclosure. As shown in FIG14A , the method for preparing the package structure includes:

[0136] Step S1: forming an insulating dielectric layer and a conductive pillar, wherein the insulating dielectric layer has a first surface and a second surface disposed opposite to each other, and at least one first accommodation space is formed on the insulating dielectric layer, extending from the first surface to the second surface, wherein the conductive pillars correspond to the first accommodation spaces one by one, and are located in the corresponding first accommodation spaces, wherein the at least one conductive pillar comprises: at least one first conductive pillar, wherein two end surfaces of the first conductive pillar are flush with the first surface and the second surface, respectively, and wherein the material of the first conductive pillar comprises: a non-metallic conductive material, and wherein the absolute value of the difference between the thermal expansion coefficient of the first conductive pillar and the insulating dielectric layer is less than or equal to 8×10 -6 / ℃.

[0137] FIG14B is a schematic flow chart of a method for forming an insulating dielectric layer and a conductive pillar based on a reflow process in an embodiment of the present disclosure. FIG15 is a schematic flow chart of a process flow structure corresponding to the method shown in FIG14B. FIG16 is a schematic flow chart of another process flow structure corresponding to the method shown in FIG14B. As shown in FIG14B to FIG16, step S1 includes:

[0138] Step S101: providing a non-metallic conductive material substrate, wherein the non-metallic conductive material substrate is divided into a first portion and a second portion stacked along a thickness direction.

[0139] As an example, the non-metallic conductive material substrate is a silicon substrate 11 , and the thickness of the non-metallic conductive material substrate 11 and the thickness of each of the first portion 11 a and the second portion 11 b can be preset according to actual needs.

[0140] Step S102 : performing a patterning process on the first portion to form at least one columnar pattern, wherein the at least one columnar pattern includes a preliminary pattern of at least one first conductive column.

[0141] During the patterning process of the first portion 11a, a deep reactive ion etching (DRIE) process may be used to etch the first portion 11a of the silicon substrate. The etching depth may be controlled by etching time to ensure that the second portion 11b is not patterned.

[0142] In step S102 , the number of columnar graphics formed and the shape of each columnar graphic can be pre-designed according to actual needs.

[0143] The process flow shown in FIG. 15 corresponds to preparing the package cover plate CP shown in FIG. 4B , and the process flow shown in FIG. 16 corresponds to preparing the package cover plate CP shown in FIG. 8B .

[0144] As shown in FIG. 15 , in some embodiments, the at least one columnar graph obtained in step S102 also includes a preliminary graph of a filling column 6 .

[0145] As shown in FIG. 16 , in some embodiments, the at least one columnar pattern obtained in step S102 also includes a preliminary pattern of the second conductive pillar 10 .

[0146] 15 and 16 , in some embodiments, the at least one columnar graph obtained in step S102 also includes a preliminary graph of the connecting column 7 .

[0147] Step S103: Fix the insulating dielectric material sheet and the end of the columnar pattern away from the second portion to obtain an assembly.

[0148] In some embodiments, the insulating dielectric material sheet 12 is a glass sheet, which can be bonded to the end of at least a portion of the columnar pattern obtained in step 102 away from the second portion 11 b .

[0149] Step S104 : performing a reflow process on the assembly so that part of the insulating dielectric material in the insulating dielectric material sheet reflows to the side of the columnar pattern to obtain an original substrate.

[0150] During the reflow process, the heating temperature should be higher than the melting point of the insulating dielectric material sheet and lower than the melting point of the non-metallic conductive material.

[0151] In some embodiments, a glass reflow process can be used to allow molten glass to reflow to the sides of the columnar (essentially silicon columns) pattern; after cooling, the original substrate is obtained.

[0152] Step S105 , double-sided polishing is performed on the original substrate to expose two end faces of the columnar pattern, thereby obtaining a package cover plate CP. The insulating dielectric material in the package cover plate CP serves as an insulating dielectric layer, and the columnar pattern in the package cover plate CP includes a first conductive column 2 .

[0153] In step S105 , a chemical mechanical polishing (CMP) process may be used to perform double-sided polishing on the original substrate obtained in step S104 so as to expose both end faces of the columnar pattern, thereby obtaining a package cover plate CP.

[0154] 15 , when at least one columnar pattern obtained in step S102 includes a preliminary pattern of a filling column 6 , the package cover plate CP obtained in step S105 includes a filling column 6 .

[0155] In some embodiments, after step S105 , the portion of the filling column 6 close to the first surface P1 may be etched so that the end surface of the filling column 6 close to the second surface P2 is located between the planes of the first surface P1 and the second surface P2 .

[0156] 16 , when the at least one columnar pattern obtained in step S102 includes a preliminary pattern of the second conductive pillar 10 , the package cover plate CP obtained in step S105 includes the second conductive pillar 10 .

[0157] In some embodiments, after step S105 , the portion of the second conductive pillar 10 close to the first surface P1 may be etched so that the end surface of the second conductive pillar 10 close to the second surface P2 is located between the planes of the first surface P1 and the second surface P2 .

[0158] FIG17 is a flow chart of another method for preparing a package structure provided by an embodiment of the present disclosure. FIG18 is a schematic diagram of a process flow structure corresponding to the method shown in FIG17. FIG19 is a schematic diagram of another process flow structure corresponding to the method shown in FIG17. As shown in FIG17 to FIG19, the process flow shown in FIG18 corresponds to the preparation of the package structure shown in FIG4B, and the process flow shown in FIG19 corresponds to the preparation of the package cover plate CP shown in FIG8B. The preparation method includes:

[0159] Step S1: forming a packaging cover.

[0160] For the detailed description of step S1, please refer to the previous description of Figures 14A to 16, which will not be repeated here.

[0161] Step S2: forming a sealing material film on one side of the first surface and patterning the sealing material film.

[0162] In step S2 , at least the pattern of the sealing ring 8 can be obtained through the patterning process, and the orthographic projection of the conductive pillar on the first surface P1 is located within the area surrounded by the orthographic projection of the corresponding sealing ring 8 on the first surface P1 .

[0163] The first conductive pillars 2 are equipped with corresponding first conductive connection terminals 3 . The first conductive connection terminals 3 are connected to the end surfaces of the corresponding first conductive pillars 2 flush with the first surface P1 . The sealing material includes a conductive material, such as a metal material.

[0164] In some embodiments, after patterning the sealing material film, the pattern of the sealing ring 8 is obtained while also obtaining the pattern of the first conductive connection terminal 3. That is, the first conductive connection terminal 3 and the sealing ring 8 are obtained based on the same patterning process.

[0165] Step S3: forming a protective layer on one side of the second surface, wherein the protective layer is provided with at least one through hole corresponding to the conductive column, and the through hole is connected to the end surface of the corresponding conductive column that is flush with the second plane.

[0166] In step S3, a protective material film is first formed on the second surface P2, and then the protective material film is patterned to obtain a pattern of the protective layer 5. The protective material can be at least one of silicon oxide and silicon nitride.

[0167] Step S4: forming a second conductive connection terminal.

[0168] The second conductive connection terminals 4 are located within the through-holes corresponding to the corresponding conductive pillars and are connected to the end surfaces of the corresponding conductive pillars that are flush with the second surface P2. The thickness of the second conductive connection terminals 4 in a direction perpendicular to the second surface P2 is greater than the thickness of the protective layer 5 in a direction perpendicular to the second surface P2. The second conductive connection terminals 4 can be used to write electrical signals provided by an external unit to the corresponding conductive pillars, or transmit electrical signals provided by the conductive pillars to external units.

[0169] FIG20 is a flow chart of another method for preparing the packaging structure provided by an embodiment of the present disclosure. FIG21 is a schematic diagram of a process flow structure corresponding to the method shown in FIG20. FIG22 is a schematic diagram of another process flow structure corresponding to the method shown in FIG20. As shown in FIG20 to FIG22, the preparation method not only includes steps S1 to S4 in FIG17, but also includes, between steps S3 and S3a, step S3a; only step S3a is described in detail below.

[0170] Step S3a: fixing the package cover plate and the MEMS chip via the sealing ring and the first conductive connection terminal.

[0171] That is, before forming the protective layer 5 on the package cover plate CP, the package cover plate CP is first packaged and fixed to the MEMS chip 400. In step S3a, a bonding process can be used to bond the sealing ring 8 and the first conductive connection terminal 3 to the corresponding positions on the MEMS chip 400.

[0172] The first conductive connection terminals 3 can transmit electrical signals on the MEMS chip to the corresponding first conductive pillars 2 for collection by external units, or transmit electrical signals written by external units to the first conductive pillars 2 to the MEMS chip 400 .

[0173] Based on the same inventive concept, an embodiment of the present disclosure also provides a sensor, which includes: a MEMS chip and a packaging structure for packaging the MEMS chip, wherein the packaging structure adopts the packaging structure provided in any of the previous embodiments. For the specific description of the packaging structure, please refer to the contents of the previous embodiments and will not be repeated here.

[0174] FIG23 is a schematic cross-sectional view of a sensor provided in an embodiment of the present disclosure. FIG24 is another schematic cross-sectional view of a sensor provided in the present disclosure. As shown in FIG23 and FIG24 , in some embodiments, MEMS chip 400 includes a pressure-sensitive chip. In this case, the sensor is a pressure-sensitive sensor.

[0175] In some embodiments, a pressure-sensitive chip 400 includes a first substrate 401, a pressure-sensitive film 403, and a pressure-detection functional structure 404. A pressure-sensitive cavity 402 is formed on the first substrate 401; the pressure-sensitive film 403 is located on one side of the first substrate 400 and connected to the pressure-sensitive cavity 402; and the pressure-detection functional structure 404 is located on a side of the pressure-sensitive film 403 away from the pressure-sensitive cavity 402 and connected to the pressure-sensitive film 403.

[0176] In some embodiments, the pressure sensitive chip further includes a second substrate 500 , which is fixed to a surface of the first substrate 400 away from the packaging structure to seal the pressure sensing cavity 402 .

[0177] In some embodiments, the first substrate 401 is a silicon substrate, the second substrate 500 is a glass substrate, and the first substrate 400 and the second substrate 500 can be bonded and fixed.

[0178] 23 , in some embodiments, the pressure sensitive chip is a piezoresistive pressure sensitive chip, and the pressure detection functional structure 404 includes: a piezoresistor 404 a .

[0179] 24 , in some embodiments, the pressure sensitive chip is a capacitive pressure sensitive chip, and the pressure detection functional structure 404 includes a capacitor plate 404 b , which can form a detection capacitor with the second conductive column 10 in the package cover CP.

[0180] Figure 25 is another schematic cross-sectional view of a sensor provided by an embodiment of the present disclosure. Figure 26 is another schematic cross-sectional view of a sensor provided by the present disclosure. As shown in Figures 25 and 26, in some embodiments, the first substrate 400 is divided into a pressure detection area K1 and a pressure reference area K2; in this case, the corresponding packaging structure may be as shown in Figures 10 and 12. The pressure detection area K1 and the pressure reference area K2 may correspond to the packaging area Q1 and packaging area Q2 in Figures 10 and 12, respectively.

[0181] A pressure sensing cavity 402 , a pressure sensing film 403 and a pressure sensing functional structure 404 are provided in the pressure detection area K1 ; a pressure sensing functional structure 404 is provided in the pressure reference area K2 but no pressure sensing cavity 402 and pressure sensing film 403 are provided.

[0182] Among them, the part located in the pressure detection area K1 can actually sense and measure the pressure, and convert the pressure into an electrical signal output, and the output electrical signal is monotonically related to the pressure magnitude. The part located in the pressure reference area K2 has a signal output equal to the signal output of the part of the pressure detection area K1 when it is not subjected to external pressure, and does not change with changes in external pressure. In actual use, by comparing the output signal of the part of the pressure detection area K1 with the output signal of the part of the pressure reference area K2 (for example, differential processing of the signal), the corresponding pressure magnitude is determined according to the difference in the signal. This can reduce the adverse effects of noise, zero drift, temperature drift, etc. on the output of the pressure sensor, thereby improving the overall performance of the pressure sensor.

[0183] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A packaging structure applied to a MEMS chip, wherein: include: An insulating dielectric layer 1, having a first surface and a second surface arranged opposite to each other, and at least one first accommodation space extending from the first surface to the second surface is formed on the insulating dielectric layer; At least one conductive column corresponding to the first accommodation space, the conductive column is located in the corresponding first accommodation space, the material of the conductive column includes: a non-metallic conductive material, and the absolute value of the difference between the thermal expansion coefficient of the conductive column and the insulating medium layer is less than or equal to 8×10 -6 / ℃; The at least one conductive column includes: at least one first conductive column, wherein two end surfaces of the first conductive column are flush with the first surface and the second surface respectively.

2. The packaging structure according to claim 1, wherein: The at least one conductive column further includes: a second conductive column, an end surface of the second conductive column being flush with the second surface; The other end surface of the second conductive column is flush with the first surface; Alternatively, the other end surface of the second conductive column is located between the plane where the first surface is located and the plane where the second surface is located.

3. The packaging structure according to claim 1, wherein: At least one second accommodation space is formed on the insulating medium layer and extends from the first surface to the second surface; The packaging structure further includes: a filling column, wherein the filling column is located in the corresponding second accommodation space, one end surface of the filling column is flush with the second surface, and the other end surface of the filling column is located between the plane where the first surface is located and the plane where the second surface is located.

4. The packaging structure according to claim 3, wherein: The material of the filling column is the same as that of the conductive column.

5. The packaging structure according to claim 1, wherein: Also includes: At least one sealing ring is located on one side of the first surface, and the orthographic projection of the conductive column on the first surface is located within a region surrounded by the orthographic projection of the corresponding sealing ring on the first surface.

6. The packaging structure according to claim 5, wherein: The first conductive column is provided with a corresponding first conductive connection terminal, and the first conductive connection terminal is connected to an end surface of the corresponding first conductive column that is flush with the first surface; A thickness of the first conductive connection terminal in a direction perpendicular to the first surface is equal to a thickness of the sealing ring in a direction perpendicular to the first surface.

7. The packaging structure according to claim 6, wherein: The first conductive connection terminal and the sealing ring are made of the same material and are disposed in the same layer.

8. The packaging structure according to claim 5, wherein: The number of the sealing rings is two, and the edges of the two sealing rings close to each other are connected as one.

9. The packaging structure according to any one of claims 5 to 8, wherein: At least one third accommodation space corresponding to the sealing ring is also formed on the insulating medium layer, and the third accommodation space is connected to the first surface; A connecting column is disposed in the third accommodating space, one end surface of the connecting column is flush with the first surface, and the end surface of the connecting column that is flush with the first surface is in contact with the corresponding sealing ring.

10. The packaging structure according to claim 9, wherein: The third accommodation space is also connected to the second surface, and the other end surface of the connecting column is flush with the second surface.

11. The packaging structure according to claim 9 or 10, wherein: The material of the connecting pillar is the same as that of the conductive pillar.

12. The package structure according to claim 1, wherein: Also includes: The protective layer 5 is located on one side of the second surface, and is provided with at least one through hole corresponding to the conductive column, wherein the through hole is connected to an end surface of the corresponding conductive column that is flush with the second plane.

13. The packaging structure according to claim 12, wherein: The conductive column is configured as a corresponding second conductive connection terminal, the second conductive connection terminal is located in a through hole corresponding to the conductive column, and the second conductive connection terminal is connected to an end surface of the corresponding conductive column that is flush with the second surface; A thickness of the second conductive connection terminal in a direction perpendicular to the second surface is greater than a thickness of the protection layer in a direction perpendicular to the second surface.

14. The packaging structure according to any one of claims 1 to 13, wherein: The material of the insulating dielectric layer includes: glass; The material of the conductive pillar includes silicon.

15. A method for preparing a packaging structure, wherein: The packaging structure is any one of claims 1 to 14, and the preparation method comprises: An insulating dielectric layer and a conductive column are formed, wherein the insulating dielectric layer has a first surface and a second surface arranged opposite to each other, and at least one first accommodation space is formed on the insulating dielectric layer, which extends from the first surface to the second surface, and the conductive column corresponds to the first accommodation space one by one, and the conductive column is located in the corresponding first accommodation space, and the at least one conductive column comprises: at least one first conductive column, and the two end surfaces of the first conductive column are respectively flush with the first surface and the second surface, and the material of the first conductive column comprises: a non-metallic conductive material, and the absolute value of the difference between the thermal expansion coefficient of the first conductive column and the insulating dielectric layer is less than or equal to 8×10 -6 / ℃.

16. The preparation method according to claim 15, wherein: The steps of forming the insulating dielectric layer and the conductive pillars specifically include: Providing a non-metallic conductive material substrate, wherein the non-metallic conductive material substrate is divided into a first part and a second part stacked in a thickness direction; performing a patterning process on the first portion to form at least one columnar pattern, the at least one columnar pattern including a preliminary pattern of at least one first conductive column; Fixing the insulating dielectric material sheet to the end of the columnar pattern away from the second portion to obtain an assembly; Performing a reflow process on the assembly so that part of the insulating dielectric material in the insulating dielectric material sheet reflows to the side of the columnar pattern to obtain an original substrate; The original substrate is double-sided polished to expose two end faces of the columnar pattern to obtain a packaging cover plate, wherein the insulating dielectric material in the packaging cover plate serves as the insulating dielectric layer, and the columnar pattern in the packaging cover plate includes the first conductive column.

17. The preparation method according to claim 16, wherein: The packaging structure is the packaging structure described in claim 2; In the step of performing a patterning process on the first portion to form at least one columnar pattern, the at least one columnar pattern formed also includes a preliminary pattern of the second conductive column; The columnar pattern in the package cover also includes the second conductive column.

18. The preparation method according to claim 17, wherein: After the step of double-sided polishing the original substrate, the method further comprises: A portion of the second conductive column close to the first surface is etched so that an end surface of the second conductive column close to the second surface is located between a plane where the first surface is located and a plane where the second surface is located.

19. The preparation method according to claim 16, wherein: The packaging structure is the packaging structure described in claim 3; The first portion is subjected to a patterning process to form at least one columnar pattern. In the step, the at least one columnar graph formed also includes a preliminary graph of the filling column 6; The columnar pattern in the packaging cover plate also includes the filling column.

20. The preparation method according to claim 16, wherein: The packaging structure is the packaging structure described in claim 5; After the step of double-sided polishing the original substrate, the method further comprises: forming a sealing material film on one side of the first surface; The sealing material film is patterned to obtain a pattern of at least one sealing ring, wherein the orthographic projection of the conductive column on the first surface is located within a region enclosed by the orthographic projection of the corresponding sealing ring on the first surface.

21. The preparation method according to claim 20, wherein: The first conductive column is provided with a corresponding first conductive connection terminal, and the first conductive connection terminal is connected to an end surface of the corresponding first conductive column that is flush with the first surface; The sealing material includes a conductive material; In the step of patterning the sealing material film, the pattern of the sealing ring and the pattern of the first conductive connection terminal are obtained simultaneously.

22. The preparation method according to claim 21, wherein In the step of performing a patterning process on the first portion to form at least one columnar pattern, the at least one columnar pattern formed further includes a preliminary pattern of connecting pillars; The columnar pattern in the packaging cover plate also includes the connecting column, and the end surface of the connecting column that is flush with the first surface is in contact with the corresponding sealing ring.

23. The preparation method according to claim 15, wherein: Also includes: A protective layer is formed on one side of the second surface, wherein the protective layer is provided with at least one through hole corresponding to the conductive column, and the through hole is connected to an end surface of the corresponding conductive column that is flush with the second plane; A second conductive connection terminal is formed, wherein the second conductive connection terminal is located corresponding to the The second conductive connection terminal is in the through hole corresponding to the conductive column, and is connected to the end surface of the corresponding conductive column that is flush with the second surface. The thickness of the second conductive connection terminal in the direction perpendicular to the second surface is greater than the thickness of the protective layer in the direction perpendicular to the second surface.

24. A sensor, wherein: include: A MEMS chip and a packaging structure for packaging the MEMS chip, wherein the packaging structure adopts any one of claims 1 to 14.

25. The sensor according to claim 24, wherein The MEMS chip includes: a pressure sensitive chip.

26. The sensor according to claim 25, wherein The pressure sensitive chip comprises: a first substrate, wherein a pressure-sensing cavity is formed on the first substrate; A pressure-sensitive film, located on one side of the first substrate and connected to the pressure-sensitive cavity; The pressure detection functional structure is located on a side of the pressure-sensitive film away from the pressure-sensitive cavity and is connected to the pressure-sensitive film.

27. The sensor according to claim 26, wherein The first substrate is divided into a pressure detection area and a pressure reference area; The pressure sensing cavity, the pressure sensing film and the pressure detection functional structure are arranged in the pressure detection area; The pressure detection functional structure is arranged in the pressure reference area, but the pressure sensing cavity and the pressure sensing film are not arranged.

28. The sensor according to claim 26 or 27, wherein The functional structure for pressure detection includes: a varistor or a capacitor plate.

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