Reactor for epitaxial deposition of semiconductor material on substrate

By introducing a carriage and tube structure into the epitaxial reactor, allowing the reaction chamber to be extracted or inserted in the non-operating state, solving the problem of difficulty in maintaining the epitaxial reactor in the prior art, achieving more efficient maintenance and longer equipment life.

CN119615357APending Publication Date: 2025-03-14LPE SPA
View PDF 4 Cites 0 Cited by

Patent Information

Application Number
CN202411262608.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-09-13
Filing Date
2024-09-10
Publication Date
2025-03-14

AI Technical Summary

Technical Problem

Existing epitaxial reactors are difficult to perform simple and cost-effective maintenance during long-term use, especially due to surface degradation caused by pseudo-deposition of semiconductor materials and repeated deposition processes.

Method used

A reactor with a carriage and tube structure is designed to allow the reaction chamber to be pulled out or inserted in an inoperable state, thereby facilitating maintenance. The carriage slides in the longitudinal direction and can be maintained at room temperature or low temperature conditions.

Benefits of technology

Through this design, the maintenance convenience and efficiency of the epitaxial reactor is improved, the service life of the equipment is extended, and the maintenance cost is reduced.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119615357A_ABST
    Figure CN119615357A_ABST
Patent Text Reader

Abstract

The inventive reactor is used for epitaxially depositing a semiconductor material on a substrate and comprises: a reaction chamber (210) extending along a longitudinal direction (L); a carriage (220) adapted to support the reaction chamber (210) or a part of the reaction chamber, and a tube (230) extending along the longitudinal direction (L) and adapted to accommodate the reaction chamber (210) and the carriage (220) supporting the reaction chamber (210); the carriage (220) is adapted to slide along the longitudinal direction (L) in order to draw / insert the reaction chamber (210) from / into the tube (230) when the reactor is in an inoperative state.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] A reactor for epitaxially depositing semiconductor material on a substrate, or simply "epitaxial reactor", is described herein.

[0002] In particular, the semiconductor material to be deposited is silicon carbide.

[0003] The substrate on which the deposition takes place is also typically made of silicon carbide, but other materials cannot be excluded. Background Art

[0004] Reactors for epitaxial deposition of silicon carbide have been known for some time.

[0005] For example, in 2002, the applicant filed two international patent applications related to such a reactor, which were published as WO 2004 / 053187 A1 and WO 2004 / 053188 A1. The applicant subsequently filed first an international patent application related to a possible reaction chamber for such a reactor, which was published as WO 2015 / 092525 A1, and then an international patent application related to a possible process for such a reactor, which was published as WO 2022 / 053963 A1.

[0006] The reactor according to WO 2004 / 053187 A1 and WO 2004 / 053188 A1 has a framework comprising a reaction chamber extending in a longitudinal direction, a thermal insulation also extending in the same longitudinal direction and a tube made of quartz (or a similar material) also extending in the same longitudinal direction; the thermal insulation transversely surrounds the chamber and the tube transversely surrounds the thermal insulation. The cross-sectional shape of the chamber, the thermal insulation and the tube is substantially circular, elliptical or polygonal or rectangular; usually, but not necessarily, the cross-sections of these three elements have the same shape. The chamber and the thermal insulation usually consist of a plurality of parts connected together, for example fixed to each other.

[0007] An important aspect for any operating machine is its long-term maintenance so that it remains fully operational and always performs at an excellent level, as well as the possibility of carrying out maintenance in a relatively simple and therefore relatively cost-effective manner.

[0008] Typically, maintenance is periodic and / or predictive.

[0009] This aspect is also very important for epitaxial reactors.

[0010] In this context, maintenance is particularly important for the reaction chamber and other parts of the reactor, which are susceptible to soiling, in particular due to spurious deposition of semiconductor material, and / or to wear, in particular due to degradation of their surfaces caused by repeated deposition processes. Summary of the invention

[0011]

[0006] It would therefore be desirable to facilitate maintenance of reactors used for epitaxial deposition of semiconductor material on substrates in general, and in particular, maintenance of reactors having the same or similar architecture as disclosed above.

[0012] An embodiment of a reactor particularly suitable for maintenance comprises at least one reaction chamber extending in a longitudinal direction, a carriage suitable for supporting the reaction chamber or a part of the reaction chamber, and a tube extending in the longitudinal direction and suitable for accommodating the reaction chamber and the carriage supporting the reaction chamber; the carriage being suitable for sliding in the longitudinal direction so as to extract / insert the reaction chamber from / into the tube when the reactor is in a non-operating state. The reactor is in a non-operating state when a deposition process is not taking place in the reactor and when the reaction chamber is at a low temperature, i.e. at a temperature much lower than the process temperature, for example at room temperature (below 30° C.) or at a temperature just above room temperature (below 50° C.). BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Reactors particularly suited for maintenance will become more apparent from the following detailed description considered in conjunction with the accompanying drawings, in which:

[0014] Figure 1 shows a simplified schematic diagram of an embodiment of a reactor for epitaxially depositing semiconductor material on a substrate,

[0015] Figure 2 A simplified schematic diagram showing a first embodiment of a chamber assembly,

[0016] FIG. 3A to FIG. 3C Shows Figure 2 Three different views of the chamber assembly in three different positions, Figure 4 a simplified schematic diagram showing a second embodiment of a chamber assembly, and

[0017] FIG. 5A to FIG. 5C Shows Figure 4 Three different views of the chamber assembly in three different positions.

[0018] It will be readily appreciated that there are a number of practical methods of manufacturing a reactor particularly suitable for maintenance, which methods are defined in their main advantageous aspects in the appended claims and are not limited by the following detailed description and the accompanying drawings.

[0019] It should be noted that the technical features listed below in relation to specific embodiments should not be considered to be closely related to each other and therefore should not be considered to be mutually restrictive. DETAILED DESCRIPTION

[0020] Figure 1 By way of non-limiting example, the architecture of an embodiment of a reactor 1000 for epitaxially depositing a semiconductor material, in particular and advantageously silicon carbide, on a substrate, in particular and advantageously silicon carbide, is shown.

[0021] Reactor 1000 includes chamber assembly 200, a group of components upstream of assembly 200 (see, for example, reference numerals 300, 400, and 500 in the figure), and a group of components downstream of assembly 200 (see, for example, reference numeral 600 in the figure); the terms "upstream" and "downstream" refer to positions relative to chamber assembly 200 when considering gas flow in the reactor. The upstream assembly and the downstream assembly will be described below.

[0022] The chamber assembly 200 is a part of the reactor 1000, where epitaxial deposition on the substrate is performed; in particular, inside the chamber 200 there is a "reaction and deposition zone". Process gases enter the assembly 200 from an upstream assembly (see arrow F1); in particular, the process gases enter the "reaction and deposition zone". Exhaust gases leave the assembly 200 towards downstream components (see arrow F2); in particular, the exhaust gases leave the "reaction and deposition zone". As is known, in general, both process gases and exhaust gases contain a carrier gas, such as hydrogen or helium or argon, or a mixture of two or more of these substances.

[0023] Figure 1 only its axis X and its longitudinal extension direction L are highlighted. Axis X may be a substantial axis of symmetry of the assembly 200. Direction L is not only a longitudinal extension direction but also a direction according to which the airflow passes substantially through the assembly.

[0024] Two (slightly different) embodiments of assembly 200 are respectively Figure 2 and Figure 4 , and are indicated by reference numerals 200 ′ and 200 ″, respectively.

[0025] It should be noted that the architecture of reactor 1000 also applies to chamber assemblies, which are different from Figure 2 Component 200' and Figure 4 Component 200".

[0026] It should also be noted that Figure 2 and Figure 4 The embodiment of the assembly 200 shown in the figure may be inserted in addition to Figure 1 In a reactor other than the reactor shown in .

[0027] Reactor 1000 includes a reaction chamber, a skid, tubes, and typically thermal insulation; these three or four components are part of chamber assembly 200 .

[0028] Specifically, refer to Figure 2 and Figure 4 , assembly 200' / 200" includes:

[0029] - a reaction chamber 210 extending along a longitudinal direction L,

[0030] - Suitable for supporting (such as Figure 2 Directly or as shown Figure 4 (shown indirectly) a carriage 220 of the reaction chamber 210, and

[0031] A tube 230 extending along the longitudinal direction L and suitable for housing at least the reaction chamber 210 and the carriage 220 .

[0032] The carriage 220 is suitable for sliding along the longitudinal direction L in order to extract / insert at least the reaction chamber 210 from / into the tube 230 when the reactor is in a non-operating state, in particular for maintenance operations.

[0033] Figure 4 A thermal insulation 240 is shown extending in the longitudinal direction L and arranged around the reaction chamber 210 in order to close and thermally insulate it. The thermal insulation 240 is enveloping, ie it completely closes the chamber 210, ie radially and axially.

[0034] It should be noted that Figure 2 Thermal insulation is not shown. If the maximum temperature reached by the reaction chamber during the process is low, i.e. it can be borne by the carriage supporting the reaction chamber, thermal insulation may not be present. Alternatively, the thermal insulation may be minimal, i.e. only between the reaction chamber and the carriage supporting the reaction chamber.

[0035] Figure 4 The examples in Figure 2 The embodiment in FIG. 2 differs mainly in that the carriage 210 is also adapted to support the encapsulated thermal insulation 240. Therefore, when the carriage slides, not only the entire reaction chamber 210, but also the entire encapsulated thermal insulation 240 will be withdrawn from / inserted into the tube 230.

[0036] Figure 3A The assembly 200' is shown in a first state ( Figure 2 ), wherein chamber 210 is completely inside tube 230. Slide 220 is also completely inside tube 230.

[0037] Figure 3B The assembly 200' is shown in a second state ( Figure 2 ), wherein chamber 210 is partially inside tube 230 and partially outside tube 230. Sled 220 is also partially inside tube 230 and partially outside tube 230.

[0038] Figure 3C The assembly 200 is shown in a third state" ( Figure 2 ), wherein chamber 210 is completely outside tube 230. Slide 220 is almost completely outside tube 230.

[0039] Figure 5AThe assembly 200 is shown in a first state" ( Figure 4 ), wherein the chamber 210 and the insulation 240 are completely located inside the tube 230. The carriage 220 is also completely inside the tube 230.

[0040] Figure 5B The assembly 200 is shown in a second state" ( Figure 4 ), wherein the chamber 210 and the insulation 240 are partially inside the tube 230 and partially outside the tube 230. The carriage 220 is also partially inside the tube 230 and partially outside the tube 230.

[0041] Figure 5C The assembly 200' is shown in a third state ( Figure 4 ), where the chamber 210 and the insulation 240 are completely outside the tube 230. The carriage 220 is almost completely outside the tube 230.

[0042] When the chamber 210 and possibly the insulation 240 are outside the tube 230, in particular completely outside it, they can be inspected and maintained. For example, they can be opened and then closed again. For example, one or more parts can be replaced, cleaned or repaired.

[0043] The carriage may be adapted to support the entire chamber or only a portion of the chamber. In this second case, the carriage may be adapted to remove / insert this portion of the chamber from / into the tube.

[0044] The carriage may be adapted to support the entire insulation or only a portion of the insulation. In this second case, the carriage may be adapted to remove / insert this portion of the insulation from / into the tube.

[0045] The cross section of the reaction chamber may have a substantially circular or elliptical or polygonal or rectangular outer shape.

[0046] The cross-section of the thermal insulation may have a substantially circular or oval or polygonal or rectangular inner and / or outer shape.

[0047] The cross section of the tube may have an inner and / or outer shape that is substantially circular or oval or polygonal or rectangular.

[0048] The above shapes may be the same or different. Typically, the outer shape of the reaction chamber corresponds to the inner shape of the thermal insulation. Typically, the outer shape of the thermal insulation corresponds to the inner shape of the tube.

[0049] Advantageously, the carriage is support-shaped, i.e. it comprises a portion adapted to receive a portion of the reaction chamber and / or a portion of the thermal insulation. This portion may comprise a lower wall, and advantageously comprises a front wall (e.g. a flat plate) located at a first longitudinal end region of the lower wall, and / or a rear wall (e.g. a flat plate) located at a second longitudinal end region of the lower wall. The cross section of the lower wall may be in the shape of a circular arc, an elliptical arc or a broken line.

[0050] The reaction chamber is usually made of (densified) graphite so that it can be heated by electrical induction. It usually consists of several parts that are connected together (e.g. fixed to each other).

[0051] Thermal insulation is usually made of (porous or fibrous) graphite. It usually consists of several parts that are connected together (e.g. fixed to each other).

[0052] Generally speaking it can be said that the tubes are usually made of quartz.

[0053] According to some embodiments (most typical), the tube consists of only a single tubular element made of quartz.

[0054] According to other embodiments, the tube may be composed of two tubular elements together, one (outer) made of quartz and one (inner) made of (porous or fibrous) graphite. The two tubular elements may be constrained to each other.

[0055] In order to slide the carriage back and forth, there are basically three possible situations: A) the carriage is completely at rest (especially at its first and second end regions), B) the carriage is completely suspended (especially at its first and second end regions), C) the carriage is at rest at its first end region (especially at the rear region) and suspended at its second end region (especially at the rear region). The terms "rear" and "front" refer to the gas flow in the reactor; when flowing, the gas first encounters the "front" of the chamber and then the "rear" of the chamber.

[0056] Typically, the stent rests on the inner wall of the tube.

[0057] Figure 2 and 4 The example in corresponds to case C, in particular to the carriage resting in its rear region (at Figure 1 5) and is suspended in the front end region (from Figure 1 5 is located on the right side). In particular, the rear zone is close to the chamber area where the gas is discharged, and the front zone is close to the area where the gas enters.

[0058] exist Figure 2 and Figure 4 In the example of the embodiment of the present invention, the carriage 220 comprises at least one pad 222 which rests directly on the inner surface of the tube 230; advantageously, the pad 222 is adapted to slide on this inner surface, for example by quartz-to-quartz contact. Advantageously, the pad 222 is located in a first end region of the carriage 220, in particular in its rear end region. Figure 3C and 5C , the carriage 220 is almost completely outside the tube 230 , but the pad 222 remains resting on the tube 230 , and is therefore inside the tube 230 .

[0059] exist Figure 2and 4 In the example of (as highlighted by these figures), the carriage 220 is suspended at a second end region of the carriage 220, in particular at a front region thereof.

[0060] according to Figure 2 and Figure 4 In the example of , during normal operation of the reactor, in particular during the epitaxial deposition process, the carriage also remains inside the tube. This solution is advantageous because it makes the reactor simpler from a structural point of view. Obviously, in this case, the carriage must be made of a material resistant to high temperatures, in particular the process temperatures.

[0061] The following explains how to obtain the suspension of the carriage on which everything rests.

[0062] It is also explained below how to move the carriage with everything resting on it.

[0063] Figure 1 The reactor 1000 of the embodiment in the embodiment further includes a moving assembly 250 substantially located outside the tube 230 (in Figure 2 and 4 3 and 5). The carriage 220 is constrained to the assembly 250. This constraint can allow the assembly 250 to push, pull, and thus move the carriage 210 supporting at least the reaction chamber 210. This constraint can allow the assembly 250 to keep the carriage 210 suspended. This constraint can allow both of these things; in particular, the assembly 250 includes an arm 252 (at Figure 2 and 4 3 and 5 ), the arm 252 is configured to constrain and support the carriage 220 in its front end region; alternatively, but less advantageously, the carriage may be provided with an arm adapted to be fixed to the moving assembly.

[0064] according to Figure 1 In the embodiment of the present invention, the assembly 250 comprises a plate, usually of considerable size and made of metal material, which can be arranged transversely to the axis X of the chamber 210, is movable and is always outside the tube 230 in any state of the reactor 1000; on the contrary, the arm 252 can be partially located inside the tube 230 constrained to the carriage 220. This plate can be considered the body of the assembly 250.

[0065] As in Figure 1 As shown schematically and in the diagram by arrows F1 and F2, the process gas enters the chamber assembly 200 (at Figure 1 ), particularly the reaction chamber 210 (particularly its "reaction and deposition zone"), the exhaust gases leaving the assembly 200 (at Figure 1), in particular the reaction chamber 210 (in particular its "reaction and deposition zone"). It cannot be excluded that other fluids, gases and / or liquids may enter and / or leave the chamber assembly 200 for other purposes (e.g. cooling).

[0066] Now we will use Figure 1 1 is used as a non-limiting aid to describe important, advantageous, but not strictly indispensable components of an epitaxial reactor upstream of the chamber assembly.

[0067] The reactor 1000 also comprises an outer track 300 outside the tube 230 (typically completely outside it). The moving assembly 250 comprises a slide 254 suitable for sliding along the track 300, typically back and forth. The slide 254 is typically fixed to the body of the assembly 250, in particular to a plate. The slide 254 is advantageously associated with a motor, in particular an electric motor; thus, the movement of the assembly 250 is motorized and can be precisely controlled.

[0068] Because the body of the assembly is constrained to the carriage, when the body moves, it pushes or pulls the carriage, depending on the direction of movement, thereby moving at least the reaction chamber.

[0069] Advantageously, the function of the assembly 250 is not only the movement of the reaction chamber. In particular, the assembly 250 may include a connection 256 for connecting to at least conduits for process gases, in particular precursor gases and transport gases.

[0070] Reactor 1000 may also include a guide assembly 400 adapted to deliver process gases to reaction chamber 210. Guide assembly 400 may be fluidly coupled to connection 256 of assembly 250.

[0071] according to Figure 1 In the example of , assembly 400 is fixed to the body of assembly 250 and thus moves integrally therewith. Advantageously, one (or more) springs may be provided which compress when assembly 400 moves toward the tube to reach the end stop and which decompress when the assembly moves away from the tube.

[0072] exist Figure 1 In the example of FIG. 4 , it is noted that the process gas advantageously flows into the assembly 400 transverse to the longitudinal direction L, and advantageously flows out of the assembly 400 parallel to the longitudinal direction L. In this manner, namely by utilizing the “L” shaped configuration, the longitudinal dimension of the assembly 400 can be reduced.

[0073] exist Figure 1 In the example of FIG. 4 , the connection 256 is generally configured as an inverted “U” shape. Therefore, in particular, the “L” shape configuration of the assembly 400 is easier to place.

[0074] exist Figure 1In the example of FIG. 1 , advantageously, the reactor 1000 further comprises a flexible chain 510 comprising at least a flexible conduit 520 for the process gas therein. The flexible conduit 520 is fluidically coupled to the connection 256 of the assembly 250 .

[0075] The flexible link 510 is adapted to flex relative to the sliding movement of the slide rail 254 , and the fluid coupling between the conduit 520 and the connection 256 is maintained regardless of the position of the assembly 250 .

[0076] The fluid connection between the reaction chamber 210 and the guide assembly 400 can be composed of one or more pieces of various materials ( Figure 1 ). The assembly 400 may include a portion further away from the reaction chamber 210, which may be referred to as a "liner", and a portion closer to the reaction chamber 210, which may be referred to as a "transition piece"; the further away portion is typically made of quartz; while the closer portion may be made of bare graphite or coated graphite (e.g., coated with silicon carbide) or silicon carbide; the "transition piece" is used to avoid a "thermal break" between the chamber and the "liner" and to avoid (or at least limit) spurious deposition on the "liner".

[0077] One or more thermal shields are also advantageously located in the region where the component 440 is located ( Figure 1 not shown).

[0078] Now we will use Figure 1 The non-limiting aid of FIG. 1 is used to describe important, advantageous, but not strictly indispensable components of an epitaxial reactor downstream of the chamber assembly.

[0079] like Figure 1 As shown, all of these components correspond to exhaust assembly 600; however, relative to Figure 1 In addition, it should be clear that Figure 1 This is a schematic diagram, so the relative sizes in the vertical and horizontal directions are not important.

[0080] The primary function of this assembly is to exhaust the exhaust gases from the reaction chamber 210 of the chamber assembly 200, in particular from the "reaction and deposition zone". Advantageously, the secondary function of this assembly is to allow the loading of substrates still awaiting epitaxial deposition into the reaction chamber 210, and the unloading of substrates already subjected to epitaxial deposition from the reaction chamber 210.

[0081] Emission assembly 600 includes an outlet barrel 620 fluidly coupled to an outlet of reaction chamber 210. For example, barrel 620 may have a substantially circular or elliptical or polygonal or rectangular cross-section.

[0082] Advantageously, the outlet barrel 620 is configured such that the exhaust gas enters the barrel in an axial or substantially axial direction (see Figure 1The black arrow F3 in the figure leaves the cylinder radially or substantially radially downward (see Figure 1 (black arrow F4 in the figure). Figure 1 In the embodiment of the invention, the exhaust gas is discharged from a first side of the outlet tube, in particular the lower side (see Figure 1 Black arrow F4 in FIG); for example, if the cross-section of the barrel is circular (ie, the barrel is cylindrical), the "lower side" refers to a portion of the side surface facing downward, such as 60°-90°.

[0083] The longitudinal dimensions of the reactor are thus reduced. Furthermore, the movement of the substrate (for loading and unloading) is thus facilitated. Finally, as better explained below, the maintenance of the discharge area of ​​the reactor is thus facilitated. Figure 1 The outlet barrel configuration shown is advantageous for three reasons.

[0084] The fluid connection between the reaction chamber 210 and the outlet barrel 620 can be obtained by means of a connection assembly 610 for conducting the exhaust gases. It can be formed of one or more pieces of various materials. In the assembly 610, there can be, for example, a so-called "guard ring" (or more than one guard ring connected to the assembly), the purpose of which is to thermally isolate and separate the chamber from the barrel; for example, this allows to avoid (or at least limit) thermal damage to any gasket (for example, an "O-ring") of the barrel; the "guard ring" can consist of a tubular element made of bare graphite or coated graphite (for example, coated with silicon carbide) or silicon carbide. In addition to such a "guard ring", there can also be a tubular element made of quartz, for example.

[0085] Advantageously, the outlet barrel 620 is configured such that a substrate can pass through it, moving from a first side 621 to a second side 622 (see Figure 1 621 (white arrow facing right in the figure) to load the substrate into the reaction chamber, or to move the substrate from the second side 622 to the first side 621 (see Figure 1 left-facing white arrow in the figure) to unload the substrate from the reaction chamber. Figure 1 A so-called "gate valve" 625 is schematically shown, which is suitable for opening to allow the substrate to pass through and for closing to seal the outlet barrel 620; the gate valve 625 is located on a side 621 of the barrel 620, which is opposite to the side 622 of the barrel communicating with the assembly 200, especially the reaction chamber 210.

[0086] It should be noted that the substrate is usually carried on a substrate holder. Therefore, the outlet barrel 620, and in particular its gate valve 625 and connection assembly 610, are advantageously sized to allow the substrate holder and associated handling devices to pass therethrough.

[0087] Advantageously, the outlet barrel 620 has at least one hatch on the side surface of the barrel, opposite the radial outlet of the gases, which hatch allows access to the interior of the barrel and replacement of the reactor internals located in the discharge zone of the reactor. Figure 1In an embodiment, it can be located on the second side of the outlet barrel, in particular the upper side; for example, if the cross-section of the barrel is circular (ie the barrel is cylindrical), the "upper side" can refer to a portion of the side surface facing upwards, such as 60°-90°.

[0088] It should be noted that the description given with respect to components upstream of the chamber assembly and the description given with respect to components downstream of the chamber assembly are not strictly related to each other or even to the description given with respect to components downstream of the chamber assembly. Figure 2 and Figure 4 The description given for the chamber components is not relevant.

Claims

1. A reactor for epitaxially depositing semiconductor material on a substrate, wherein: The reactor includes: a reaction chamber (210), which extends along a longitudinal direction (L), a carriage (220) adapted to support the reaction chamber (210) or a portion of the reaction chamber, and a tube (230) extending along the longitudinal direction (L) and adapted to accommodate the reaction chamber (210) and a carriage (220) supporting the reaction chamber (210); The slide (220) is adapted to slide along the longitudinal direction (L) so that the reaction chamber (210) can be withdrawn from / inserted into the tube (230) when the reactor is in a non-operating state.

2. The reactor according to claim 1, in, The reactor further comprises a thermal insulation (240) extending along the longitudinal direction (L) and arranged around the reaction chamber (210), and Therein, the carriage (220) is adapted to also support the thermal insulation (240) or a portion of the thermal insulation.

3. The reactor according to claim 1 or 2, in, The carriage (220) comprises at least one pad (222) which rests on the inner surface of the tube (230) and is particularly suitable for sliding on the inner surface.

4. The reactor according to claim 3, in, The pad (222) is located at a first end region of the slide (220).

5. A reactor according to any one of the preceding claims, in, The reactor further comprises a moving assembly (250) located outside the tube (230), wherein the carriage (220) is constrained to the moving assembly (250), and The moving assembly (250) is adapted to pull and push at least a slide frame (210) supporting the reaction chamber (210).

6. The reactor according to claim 5, in, The moving assembly (250) includes an arm (252) configured to constrain and support the carriage (220) at a second end region of the carriage (220).

7. The reactor according to claim 5 or 6, in, The reactor further comprises a track (300) outside the tube (230), The moving assembly (250) includes a slide rail (254), and Wherein, the slide rail (254) is suitable for sliding along the track (300).

8. The reactor according to claim 5, 6 or 7, in, The moving assembly (250) comprises at least a connection (256) for a process gas conduit.

9. The reactor according to claim 8, in, The reactor further includes a guide assembly (400) for supplying a process gas to the reaction chamber (210), and Wherein the guide assembly (400) is fluidly coupled to the connection (256) of the moving assembly (250).

10. The reactor according to claim 8 or 9, in, The reactor further comprises a flexible chain (510) which internally contains at least a flexible conduit (520) for process gas, and Wherein, the flexible conduit (520) is fluidly coupled to the connection (256) of the moving assembly (250).

11. The reactor according to claims 7 and 10, in, The flexible link (510) is adapted to bend relative to the sliding movement of the slide rail (254).

12. A reactor according to any one of the preceding claims, in, The reactor further comprises an exhaust assembly (600) for exhausting exhaust gas, wherein the discharge assembly (600) comprises an outlet barrel (620) fluidically coupled to an outlet of the reaction chamber (210), and The exhaust assembly (600) is configured such that a substrate can pass through the outlet tube (620) from a first side to a second side or from the second side to the first side.

13. The reactor according to claim 12, in, The outlet barrel (620) is configured such that exhaust gas enters the outlet barrel in an axial direction and exits the outlet barrel in an axial direction.

Citation Information

Patent Citations

  • Susceptor system

    WO2004053187A1

  • Susceptor system

    WO2004053188A1

  • Reaction chamber for epitaxial growth with a loading / unloading device and reactor

    WO2015092525A1

  • Method for CVD deposition of n-type doped silicon carbide and epitaxial reactor

    WO2022053963A1