Light emitting module

Abstract

The light-emitting module includes: a support base having a plurality of placement surfaces arranged in a first direction; a plurality of light-emitting devices in which a corresponding light-emitting device is disposed on each of the plurality of placement surfaces, each of the light-emitting devices including a semiconductor laser element, a first mirror member, a cover, and a second mirror member; a plurality of third mirror members; and a condensing lens. The first mirror member changes the direction of travel of the laser light emitted from the semiconductor laser element, the cover transmits the laser light having the changed direction of travel, and the second mirror member further changes the direction of travel of the laser light transmitted through the cover in a second direction. Each of the third mirror members changes the traveling direction of the laser light from the second direction to the first direction. The condenser lens couples a plurality of laser beams at an optical fiber.

Description

Technical Field

[0001] The present disclosure relates to a light emitting module. Background Art

[0002] In recent years, as the output of semiconductor laser elements has increased, technology has been developed to use semiconductor laser elements not as excitation light sources but as laser light sources for directly irradiating materials for processing. This technology is called direct diode laser (DDL) technology.

[0003] In the DDL technology, a light-emitting module having multiple semiconductor laser elements is used. The light-emitting module couples multiple lasers obtained by emitting lasers from each of the multiple semiconductor laser elements to emit high-output lasers. When the traveling directions of the multiple lasers are aligned in the same direction as designed, the multiple lasers can be effectively coupled. Patent document 1 discloses an example of an optical component that can reduce the deviation between the traveling direction of the laser emitted from the semiconductor laser element and the designed traveling direction.

[0004] Prior Art Literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. 2016 / 051836 Summary of the invention

[0007] Technical issues to be solved by the invention

[0008] Provided is a light emitting module including a plurality of light emitting devices capable of reducing a deviation between a traveling direction of laser light emitted from a semiconductor laser element and a designed traveling direction.

[0009] Technical solutions for solving technical problems

[0010] The light-emitting module disclosed in the present invention is, in an embodiment, provided with: a supporting base having a plurality of mounting surfaces arranged in a first direction; a plurality of light-emitting devices, each of which is provided with a corresponding light-emitting device on each of the plurality of mounting surfaces, each of the light-emitting devices comprising: a substrate having a mounting surface; a semiconductor laser element supported by the mounting surface; a first reflector component supported by the mounting surface; a cover having an opposing surface opposite to the mounting surface of the substrate and an upper surface located on the side opposite to the opposing surface, the cover being located above the semiconductor laser element and the first reflector component; a second reflector component supported by the upper surface of the cover; a plurality of third reflector components; a focusing lens; the first reflector component having a first reflecting surface, the first reflecting surface being inclined relative to the mounting surface and facing obliquely upward, the second reflector component having a second reflecting surface, the second At least a portion of the reflection surface is located above at least a portion of the first reflection surface, the semiconductor laser element is configured to emit laser light toward the first reflection surface, the first reflection surface reflects the laser light and changes the traveling direction of the laser light in a direction away from the mounting surface of the substrate, the cover transmits the laser light reflected by the first reflection surface, the second reflection surface reflects the laser light reflected by the first reflection surface and further changes the traveling direction of the laser light in a second direction intersecting the first direction, each of the plurality of third reflection mirror components has a third reflection surface, the third reflection surface reflects the laser light traveling in the second direction and changes the traveling direction of the laser light in the first direction, and the condensing lens couples the plurality of laser lights obtained by the laser light emitted from each of the plurality of light emitting devices and reflected by the third reflection surface into an optical fiber.

[0011] Effects of the Invention

[0012] According to the embodiment of the present disclosure, it is possible to realize a light emitting module including a plurality of light emitting devices capable of reducing a deviation between the traveling direction of laser light emitted from a semiconductor laser element and the designed traveling direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1A 1 is a plan view schematically showing the structure of a light emitting module according to an exemplary embodiment of the present disclosure.

[0014] Figure 1B 1 is a side view schematically showing the configuration of a light emitting module according to an exemplary embodiment of the present disclosure.

[0015] Figure 1C FIG. 1 is another side view schematically showing the structure of the light emitting module according to the exemplary embodiment of the present disclosure.

[0016] Figure 1DIt is a plan view schematically showing the structure of a modified example of the light emitting module according to the embodiment of the present disclosure.

[0017] Figure 2A It is a perspective view schematically showing another example of the configuration of the light emitting device according to the exemplary embodiment of the present disclosure.

[0018] Figure 2B yes Figure 2A An exploded perspective view of the light emitting device shown.

[0019] Figure 2C yes Figure 2A Another exploded perspective view of the light emitting device shown.

[0020] Figure 2D Observed from below Figure 2C A three-dimensional view of a frame included in the light-emitting device shown.

[0021] Figure 2E is from Figure 2A In the light emitting device shown, a plan view of the structure of the second reflector member and the cover is omitted.

[0022] Figure 2F yes Figure 2A A cross-sectional view of the light emitting device shown is parallel to the YZ plane.

[0023] Figure 3 It is a diagram schematically showing the configuration of a DDL device according to an exemplary embodiment of the present disclosure.

[0024] Figure 4A This is an exploded perspective view of a laser light source.

[0025] Figure 4B It is a cross-sectional view of the laser light source parallel to the YZ plane. DETAILED DESCRIPTION

[0026] Hereinafter, a light emitting device and a light emitting module including a plurality of light emitting devices according to an embodiment of the present disclosure will be described with reference to the accompanying drawings. The same reference numerals in the plurality of drawings represent the same or equivalent parts.

[0027] In addition, the embodiments described below are for the purpose of embodying the technical concept of the present invention and are not intended to limit the present invention to the following. In addition, the description of the size, material, shape, relative configuration, etc. of the constituent elements is not intended to limit the scope of the present invention to the present invention, but is intended to be illustrative. For ease of understanding, the size and positional relationship of the components shown in the drawings are sometimes exaggerated.

[0028] In this specification and claims, polygons such as triangles and quadrilaterals are referred to as polygons, including shapes that have been processed by rounding, chamfering, corner rounding, and chamfering the corners of the polygon. In addition, shapes that have been processed in the middle of the side, not limited to the corners (ends of the sides), are also referred to as polygons. That is, shapes that have been partially processed while retaining the basic shape of the polygon are included in the interpretation of "polygon" recorded in this specification and claims.

[0029] ](Implementation Method)

[0030] [Light-emitting module]

[0031] First, referring to FIGS. 1 to Figure 1C A configuration example of a light emitting module according to an embodiment of the present disclosure will be described. Figure 1A 1 is a plan view schematically showing the structure of a light emitting module according to an exemplary embodiment of the present disclosure. Figure 1B 1 is a side view schematically showing the configuration of a light emitting module according to an exemplary embodiment of the present disclosure. Figure 1C It is another side view schematically showing the structure of the light emitting module of an exemplary embodiment of the present disclosure. In these figures, for reference, mutually orthogonal X-axis, Y-axis and Z-axis are schematically shown. The direction marked by the arrow of the X-axis is called the +X direction, and the opposite direction is called the -X direction. In the case where the ±X directions are not distinguished, it is simply referred to as the X direction. The same applies to the Y direction and the Z direction. In this specification, for ease of understanding, the +Y direction is referred to as "above" and the -Y direction is referred to as "below". This does not limit the orientation of the light emitting module when in use, and the orientation of the light emitting module is arbitrary.

[0032] Figure 1 to Figure 1C The light emitting module 200 shown includes a supporting base 60, a condenser lens 70, an optical fiber 80, a supporting member 82 for supporting the optical fiber 80, a plurality of slow axis collimating lenses 92, a plurality of reflective mirror members 94, and a plurality of light emitting devices 100A. Each reflective mirror member 94 has a reflecting surface 94s.

[0033] like Figure 1B As shown in FIG. 1 , the support base 60 is disposed on a reference plane Ref parallel to the XZ plane. The reference plane Ref is a reference plane of height in the light emitting module 200. Figure 1A As shown, the support base 60 has a first portion 60-1 supporting a plurality of light emitting devices 100A. The support base 60 also has a plurality of second portions 60-2 supported by the first portion 60-1. Each second portion 60-2 supports a corresponding slow axis collimating lens 92 and a reflector component 94. The support base 60 also has a third portion 60-3 connected to the first portion 60-1. The third portion 60-3 supports a focusing lens 70 and an optical fiber 80.

[0034] The first part 60-1 has a plurality of first mounting surfaces 60s1 arranged in the X direction. A corresponding second part 60-2 is arranged on each first mounting surface 60s1. Each second part 60-2 has a second mounting surface 60s2. The third part 60-3 has a third mounting surface 60s3.

[0035] The height of the plurality of first mounting surfaces 60s1 is as follows: Figure 1B As shown in FIG. 1 , the height of the second mounting surfaces 60s2 is gradually reduced along the +X direction. Figure 1A As shown, a corresponding light emitting device 100A is arranged on each first mounting surface 60s1. A corresponding slow axis collimating lens 92 and a reflector component 94 are arranged on each second mounting surface 60s2. In the case where the slow axis collimating lens 92 and / or the reflector component 94 have a sufficiently large size in the Y direction, the slow axis collimating lens 92 and / or the reflector component 94 can be arranged on the first mounting surface 60s1 without passing through the second part 60-2. A focusing lens 70 is arranged on the third mounting surface 60s3, and an optical fiber 80 is arranged via a supporting component 82.

[0036] exist Figure 1B In the example shown, the height of the third loading surface 60s3 is greater than the smallest height of the plurality of first loading surfaces 60s1 and smaller than the largest height. The height of the third loading surface 60s3 is also smaller than the smallest height of the plurality of second loading surfaces 60s2. Depending on the size of the condenser lens 70 in the Y direction, the height of the third loading surface 60s3 may be equal to or smaller than the smallest height of the plurality of first loading surfaces 60s1. Alternatively, the height of the third loading surface 60s3 may be equal to or greater than the largest height of the plurality of first loading surfaces 60s1.

[0037] In Figures 1 to Figure 1C In the example shown, the number of light emitting devices 100 is 4 and the number of first mounting surfaces 60s1 is 4, but the number is not limited to these numbers. The number of light emitting devices 100 may be 2, 3, or 5 or more. The more the number of light emitting devices 100 increases, the higher the output laser light can be obtained. The number of first mounting surfaces 60s1 may be 2, 3, or 5 or more, and may be equal to or greater than the number of light emitting devices 100.

[0038] The support substrate 60 may be formed of a ceramic selected from the group consisting of, for example, AlN, SiN, SiC, and alumina. Alternatively, the support substrate 60 may be formed of at least one metal material selected from the group consisting of, for example, Cu, Al, and Ag. The support substrate 60 may be formed of a metal matrix composite material in which diamond particles are dispersed in at least one metal material selected from the group consisting of, for example, Cu, Al, and Ag. The support substrate 60 may be formed as a whole or as an assembly of multiple parts. The multiple parts may be formed of the same material as each other or of different materials. For example, the first part 60-1, the multiple second parts 60-2, and the third part 60-3 may be formed as a whole or independently of each other. Alternatively, the first part 60-1 and the third part 60-3 may be formed as a whole, and the multiple second parts 60-2 may be formed independently of the first part 60-1 and the third part 60-3.

[0039] The support base 60 is preferably formed of a metal material selected from the group consisting of Cu, Al and Ag and is formed of a single member. Metal materials have better heat dissipation than ceramics and are easy to process because they are soft.

[0040] The support base 60 functions as a support platform for configuring the plurality of light emitting devices 100. The support base 60 can also function as a heat sink that transfers the heat generated from the plurality of light emitting devices 100 to the outside to reduce the excessive temperature rise of the light emitting devices 100. At this time, one or more flow paths for liquid cooling can also be provided inside the support base 60. As the liquid for liquid cooling, water can be used, for example. In addition, a blade structure for air cooling can also be provided on the surface of the support base 60. Alternatively, when the support base 60 is configured on a heat sink prepared separately, the support base 60 can also function as a heat sink that transfers the heat generated from the plurality of light emitting devices 100 to the heat sink.

[0041] like Figure 1A as well as Figure 1C As shown, each light emitting device 100 emits laser light L in the +Z direction. Figure 1A As shown, each slow axis collimating lens 92 collimates the laser light emitted from the corresponding light emitting device 100 and traveling in the +Z direction on the XZ plane. Figure 1A and Figure 1B As shown, the reflective surface 94s of each reflector member 94 reflects the collimated laser light L emitted from the corresponding light emitting device 100 and changes the traveling direction of the laser light L toward the condenser lens 70 in the +X direction. Figure 1A In the example shown, there are three thick lines marked with arrows. Figure 1B and Figure 1CIn the example shown, this is indicated by a thick line marked with an arrow. Figure 1A In the example shown, the laser light L is indicated by three thick lines with arrow marks in order to emphasize that the laser light L has expansion.

[0042] The condenser lens 70 includes a fast-axis condenser lens 70a and a slow-axis condenser lens 70b. The fast-axis condenser lens 70a is, for example, a cylindrical lens having the same cross-sectional shape in the Z direction, and the slow-axis condenser lens 70b is, for example, a cylindrical lens having the same cross-sectional shape in the Y direction. The optical axes of the fast-axis condenser lens 70a and the slow-axis condenser lens 70b are parallel to the X direction. The condenser lens 70 can be formed of at least one light-transmitting material selected from the group consisting of, for example, glass, silicon, quartz, synthetic quartz, sapphire, transparent ceramics, silicone resin, and plastic.

[0043] The fast axis condenser lens 70a is configured so that its focal point is substantially consistent with the light incident end 80a of the optical fiber 80. Similarly, the slow axis condenser lens 70b is configured so that its focal point is substantially consistent with the light incident end 80a of the optical fiber 80. The focal length of the fast axis condenser lens 70a is longer than the focal length of the slow axis condenser lens 70b. Figure 1B As shown, the fast axis condenser lens 70a condenses the plurality of laser lights L emitted from each of the plurality of light emitting devices 100 to the light incident end 80a of the optical fiber 80 in the XY plane. Figure 1A As shown, the slow axis condensing lens 70 b condenses the laser light L having spread emitted from each of the plurality of light emitting devices 100 to the light incident end 80 a in the XZ plane.

[0044] As described above, the laser light L emitted in the +Z direction from each of the plurality of light emitting devices 100 is reflected in the +X direction by the corresponding reflection surface 94s. The plurality of laser lights L thus obtained can be coupled by the condenser lens 70 and made incident on the optical fiber 80.

[0045] As a result, the light emitting module 200 emits coupled light coupled with a plurality of lasers L from the light emitting end 80b of the optical fiber 80. The output of the coupled light is substantially equal to a value obtained by multiplying the output of the lasers L emitted from each light emitting device 100 by the number of light emitting devices 100. Therefore, if the number of light emitting devices 100 is increased, the output of the coupled light can be increased.

[0046] Next, refer to Figure 1D A modification of the light emitting module 200 according to the embodiment of the present disclosure will be described. Figure 1D It is a plan view schematically showing the structure of a modified example of the light emitting module according to the embodiment of the present disclosure. Figure 1D The light emitting module 210 shown in FIG. 1 to FIG. 2 is similar to the light emitting module 210 shown in FIG. 1 in the following three aspects: Figure 1C The light module 200 shown is different.

[0047] The first point is that the light emitting module 210 has a support base 62A instead of the support base 60. The shape of the support base 62A is different from the shape of the support base 60. The second point is that the light emitting module 210 has a plurality of light emitting devices 100-2, a plurality of slow axis collimating lenses 92a and a plurality of reflector components 94a, in addition to a plurality of light emitting devices 100-1, a plurality of slow axis collimating lenses 92b and a plurality of reflector components 94b. Each reflector component 94a has a reflection surface 94as, and each reflector component 94b has a reflection surface 94bs. The third point is that the light emitting module 210 also has a reflector component 94c, a 1 / 2 wavelength plate 96 and a polarization beam splitter 98. The reflector component 94c has a reflection surface 94cs.

[0048] The support base 62A has a first part 62A1 that supports a plurality of light emitting devices 100-1 and a plurality of light emitting devices 100-2. The support base 62A also includes a plurality of second parts 62A2 supported by the first part 62A1. Each second part 62A2 supports a corresponding slow axis collimating lens 92a, a slow axis collimating lens 92b, a reflector component 94a and a reflector component 94b. The support base 62A also includes a third part 62A3 connected to the first part 62A1. The third part 62A3 supports a focusing lens 70, an optical fiber 80, a reflector component 94c, a 1 / 2 wavelength plate 96 and a polarization beam splitter 98.

[0049] The first portion 62A1 has a plurality of first mounting surfaces 60s1 arranged in the X direction. A corresponding second portion 62A2 is arranged on each first mounting surface 60s1. Each second portion 62A2 has a second mounting surface 60s2. The third portion 62A3 has a third mounting surface 60s3.

[0050] The light emitting device 100-2, the slow axis collimating lens 92a and the reflector component 94a respectively have Figure 1A The light emitting device 100, the slow axis collimating lens 92 and the reflector component 94 shown have the same structure. The light emitting device 100-2, the slow axis collimating lens 92b and the reflector component 94b are also the same. The light emitting device 100-1, the slow axis collimating lens 92a and the reflector component 94a are arranged in sequence along the +Z direction, and the light emitting device 100-2, the slow axis collimating lens 92b and the reflector component 94b are arranged in sequence along the -Z direction. The configuration of the light emitting device 100-1 and the light emitting device 100-2 is a mutually reversed relationship in the Z direction. The configuration of the slow axis collimating lens 92a and the slow axis collimating lens 92b and the configuration of the reflector component 94a and the reflector component 94b are also the same.

[0051] Each light emitting device 100-1 and each light emitting device 100-2 are arranged on the corresponding first mounting surface 60s1. Each light emitting device 100-1 emits laser light La in the +Z direction, and each light emitting device 100-2 emits laser light Lb in the -Z direction. The polarization directions of laser light La and Lb are parallel to the X direction. Each slow axis collimating lens 92a, each slow axis collimating lens 92b, each reflector component 94a, and each reflector component 94b are arranged on the corresponding second mounting surface 60s2. Each slow axis collimating lens 92a collimates the laser light La emitted in the +Z direction from the corresponding light emitting device 100-1 on the XZ plane. Each slow axis collimating lens 92b collimates the laser light Lb emitted in the -Z direction from the corresponding light emitting device 100-2 on the XZ plane. The reflecting surface 94as of each reflector component 94a reflects the collimated laser light La, so that the traveling direction of the laser light La changes to the +X direction. The reflecting surface 94bs of each mirror member 94b reflects the collimated laser light Lb, and changes the traveling direction of the laser light Lb to the +X direction.

[0052] The reflector component 94c, the 1 / 2 wavelength plate 96 and the polarization beam splitter 98 are arranged on the third mounting surface 60s3. The reflection surface 94cs of the reflector component 94c reflects the laser light Lb traveling in the +X direction, and changes the traveling direction of the laser light Lb to the -Z direction. The 1 / 2 wavelength plate 96 changes the polarization direction of the laser light Lb traveling in the -Z direction from the X direction to the Y direction. The polarization beam splitter 98 transmits the laser light La traveling in the +X direction and having the polarization direction in the Z direction, and travels in the -Z direction and reflects the laser light Lb having the polarization direction in the Y direction. The laser light La that has passed through the polarization beam splitter 98 is converged to the light incident end 80a of the optical fiber 80 through the focusing lens 70. Similarly, the laser light Lb reflected by the polarization beam splitter 98 is converged to the light incident end 80a of the optical fiber 80 through the focusing lens 70.

[0053] As a result, the light emitting module 210 emits coupled light in which the plurality of laser lights La and the plurality of laser lights Lb are coupled from the light emitting end 80b of the optical fiber 80. Figure 1D In the exemplary light emitting module 210, Figure 1A Compared with the exemplary light emitting module 200, the total number of the light emitting devices 100-1 and the number of the light emitting devices 100-2 is twice the number of the light emitting devices 100. Therefore, the output of the coupled light can be further increased.

[0054] In the light emitting module 200, when the traveling directions of the plurality of laser lights L are aligned in the +X direction as designed, the plurality of laser lights L can be effectively coupled by the condenser lens 70 and incident on the optical fiber 80. The same is true for the light emitting module 210 when the traveling directions of the plurality of laser lights La and the plurality of laser lights Lb are aligned in the +X direction as designed.

[0055] In the light emitting module 200 of this embodiment, each of the plurality of first mounting surfaces 60s1 having different heights is provided with a corresponding light emitting device 100, but the configuration is not limited to this. Alternatively, the plurality of light emitting devices 100 may be used in a more general spatial coupling type light emitting module.

[0056] [Light-emitting device]

[0057] 2 to 3. Figure 2F An example of the configuration of a light emitting device according to an embodiment of the present disclosure is described. According to the light emitting device according to an embodiment of the present disclosure, the deviation between the traveling direction of the laser light L and the designed traveling direction can be reduced. In this specification, when a "traveling direction" is simply described as "traveling direction" such as "traveling direction of laser light", the "traveling direction" refers to the actual traveling direction.

[0058] Figure 2A It is a perspective view schematically showing the structure of a light emitting device according to an exemplary embodiment of the present disclosure. Figure 2B yes Figure 2A An exploded perspective view of the light emitting device shown. Figure 2B The light emitting device 100 shown includes a substrate 10, a laser light source 20, a first reflector component 30a, a second reflector component 30b, a frame 40, a plurality of wires 40w, and a cover 50. The substrate 10 has a mounting surface 10us. The first reflector component 30a has a first reflection surface 30as, and the second reflector component 30b has a second reflection surface 30bs. The laser light source 20 is a chip on submount type semiconductor laser light source having a semiconductor laser element 22. The light emitting device 100 may further include a protection element such as a Zener diode and / or a temperature measuring element such as a thermistor for measuring the internal temperature. Figure 2C yes Figure 2A Another exploded perspective view of the light emitting device 100 is shown. Figure 2C Omitted Figure 2B A plurality of wires 40w are shown. Figure 2D Observed from below Figure 2C FIG. 4 is a perspective view of a frame 40 included in the light emitting device 100 shown. Figure 2E is from Figure 2A In the light emitting device 100 shown, a plan view of the configuration of the second reflector member 30 b and the cover 50 is omitted. Figure 2F yes Figure 2A The light emitting device 100 is shown in a cross-sectional view parallel to the YZ plane.

[0059] As described in detail later, in the light emitting device 100 of this embodiment, Figure 2FAs shown, the laser light L emitted from the laser light source 20 is reflected by the first reflecting surface 30as and the second reflecting surface 30bs in sequence. With such a configuration, regardless of whether the traveling direction of the laser light L emitted from the laser light source 20 deviates from the designed traveling direction, i.e., the +Z direction, the traveling direction of the laser light L reflected in sequence by the first reflecting surface 30as and the second reflecting surface 30bs can be directed toward the +Z direction. The first reflecting surface 30as reflects the laser light L emitted from the laser light source 20, and changes the traveling direction of the laser light L in a direction away from the mounting surface 10us of the substrate 10. The second reflecting surface 30bs reflects the laser light L reflected by the first reflecting surface 30as, and further changes the traveling direction of the laser light L toward the +Z direction.

[0060] The position and direction of the second reflector component 30b can be adjusted so that the laser light L reflected by the second reflective surface 30bs travels in the +Z direction. Figure 1A As shown, the laser light L reflected by the second reflection surface 30bs is reflected by the reflection surface 94s, so that the traveling direction of the laser light L can be changed to the designed traveling direction, that is, the +X direction. As a result, the plurality of laser lights L traveling in the +X direction can be effectively coupled, and high-output coupled light can be output from the light emitting module 200.

[0061] In a configuration where the traveling direction of the laser light L incident on the reflection surface 94s is not parallel to the designed +Z direction, the traveling direction of the laser light L reflected by the reflection surface 94s deviates from the designed +X direction. Even if the multiple laser lights L with such deviations in traveling direction are offset by a few degrees, for example, there is a possibility that they may not be effectively coupled, resulting in a decrease in the output of coupled light.

[0062] In this regard, in the present embodiment, the deviation between the traveling direction of the laser light L reflected in sequence by the first reflecting surface 30as and the second reflecting surface 30bs and the +Z direction, which is the designed traveling direction, can be reduced. As a result, the deviation between the traveling direction of the laser light L reflected by the reflecting surface 94s and the +X direction, which is the designed traveling direction, can be reduced. The angle formed by the traveling direction of the laser light L and the designed traveling direction is, for example, preferably less than 1°, more preferably less than 0.1°. In this specification, the angle formed by the two directions has a positive value and does not have a negative value.

[0063] In this embodiment, the designed traveling direction of the laser light L reflected by the first reflecting surface 30as and the second reflecting surface 30bs is parallel to the +Z direction, and the designed traveling direction of the laser light L reflected by the reflecting surface 94s is parallel to the +X direction. However, the designed traveling direction is not limited to these directions.

[0064] In this specification, the direction in which the plurality of first mounting surfaces 60s1 are arranged is referred to as the "first direction", and the traveling direction of the laser light L sequentially reflected by the first reflecting surface 30as and the second reflecting surface 30bs is referred to as the "second direction". The reference plane Ref is parallel to the first direction. In this embodiment, the first direction is the +X direction, and the second direction is the +Z direction, but they are not limited to these directions. If the second direction intersects the first direction, it does not need to be orthogonal to the first direction.

[0065] In addition, the light emitting device 100 may not be used in FIG. Figure 1B The light emitting module 200 is shown to be used for other purposes.

[0066] Hereinafter, each component of the light emitting device 100 will be described.

[0067] <Substrate 10>

[0068] ]like Figure 2C As shown, the substrate 10 has a mounting surface 10us and a lower surface 10Ls. The normal direction of the mounting surface 10us is the +Y direction. In this specification, the normal direction of a surface refers to the vertical direction of the surface, which refers to the direction away from the object having the surface. Figure 2C In the example shown, the substrate 10 has a rectangular flat plate shape, but is not limited to this shape. The substrate 10 may have a polygonal, circular or elliptical flat plate shape, for example. The lower surface 10Ls of the substrate 10 is bonded to the first mounting surface 60s1 of the support base 60 via an inorganic bonding member such as solder.

[0069] The substrate 10 can be formed of a material having a thermal conductivity of 10 W / m·K or more and 2000 W / m·K or less. The substrate 10 having such a high thermal conductivity can effectively transfer the heat generated by the laser light source 20 during driving to the laser source 20 through the substrate 10. Figure 1C The support base 60 is shown. The substrate 10 can be formed of the same material as the support base 60. The size of the substrate 10 in the X direction is, for example, 1000 μm or more and 10000 μm or less, the size in the Y direction is, for example, 100 μm or more and 5000 μm or less, and the size in the Z direction is, for example, 1000 μm or more and 20000 μm or less.

[0070] <Laser light source 20>

[0071] like Figure 2CAs shown, the laser light source 20 is supported by the mounting surface 10us of the substrate 10. The laser light source 20 includes a sub-mount 21, an end-emitting semiconductor laser element 22 supported by the sub-mount 21, a lens support component 23, and a fast-axis collimating lens 24. The semiconductor laser element 22 is supported by the mounting surface 10us of the substrate 10 via the sub-mount 21. The semiconductor laser element 22 is configured to emit laser light L toward the first reflection surface 30as. The lens support component 23 has a shape that spans the semiconductor laser element 22. The lens support component 23 supports the fast-axis collimating lens 24 through the end face. The components of the laser light source 20 can also be treated as components of the light-emitting device 100.

[0072] The semiconductor laser element 22 emits laser light L from a rectangular end face. When the end face is a plane extending in the X direction and parallel to the XY plane, the laser light L emitted from the semiconductor laser element 22 in the +Z direction expands relatively quickly in the YZ plane and relatively slowly in the XZ plane. The fast axis direction of the laser light L is parallel to the Y direction, and the slow axis direction is parallel to the X direction.

[0073] The laser light source 20 emits laser light emitted from the semiconductor laser element 22 and transmitted through the fast axis collimating lens 24. The laser light L emitted from the laser light source 20 is collimated in the YZ plane, but not in the XZ plane. In this specification, "collimation" not only means making the laser light L parallel light, but also means reducing the spread angle of the laser light L. The specific structure of the laser light source 20 will be described later.

[0074] like Figure 2F As shown, the semiconductor laser element 22 included in the laser light source 20 is sealed by the substrate 10, the frame 40 and the cover 50. The sealing is preferably an airtight sealing. The shorter the wavelength of the laser emitted from the semiconductor laser element 22, the higher the effect of the airtight sealing. This is because, in a structure in which the emission surface of the semiconductor laser element 22 is not airtightly sealed and is in contact with the outside air, the shorter the wavelength of the laser, the higher the possibility of the emission surface deteriorating during operation due to dust collection.

[0075] Alternatively, a surface-emitting semiconductor laser element such as a VCSEL (Vertical-Cavity Surface-Emitting Laser) element may be used instead of the end-emitting semiconductor laser element 22. The surface-emitting semiconductor laser element is arranged so that laser light emitted from the semiconductor laser element travels in the +Z direction.

[0076] <First Reflector Member 30a and Second Reflector Member 30b>

[0077] like Figure 2CAs shown, the first reflector component 30a is supported by the mounting surface 10us of the substrate 10. The first reflector component 30a has the same cross-sectional shape in the X direction. The cross-sectional shape is roughly triangular. The first reflector component 30a has a lower surface, a back surface, and an inclined surface connecting the lower surface and the back surface. The lower surface is parallel to the XZ plane, and the back surface is parallel to the XY plane. The normal direction of the inclined surface is a direction parallel to the YZ plane, and is a direction that forms an acute angle with the +Y direction and an acute angle with the -Z direction. The angle between the lower surface of the first reflector component 30a and the inclined surface is 45°, but it is not limited to this angle, for example, it can also be greater than 30° and less than 60°.

[0078] The first reflector component 30a has a first reflecting surface 30as on the above-mentioned inclined surface. The first reflecting surface 30as is inclined relative to the mounting surface 10us of the substrate 10 and faces obliquely upward. In this specification, obliquely upward refers to a direction that forms an angle of more than 30° and less than 60° with the +Y direction. If the first reflecting surface 30as can receive the laser light L emitted from the laser light source 20, and the normal direction of the first reflecting surface 30as is a direction that forms an angle of more than 30° and less than 60° with the +Y direction, then the normal direction of the first reflecting surface 30as can be parallel to the YZ plane or not.

[0079] like Figure 2F As shown, the first reflecting surface 30as reflects the laser light L emitted from the laser light source 20, and changes the traveling direction of the laser light L to a direction away from the mounting surface 10us of the substrate 10. The angle formed by the laser light L away from the mounting surface 10us of the substrate 10 and the normal direction of the mounting surface 10us can be, for example, greater than 0° and less than 5°. Since the angle has an allowable range of 5°, it is not necessary to adjust the position and direction of the first reflecting mirror component 30a as strictly as the position and direction of the second reflecting mirror component 30b.

[0080] like Figure 2CAs shown, the second reflector component 30b is supported by the upper surface 50us of the cover 50. The second reflector component 30b has the same cross-sectional shape in the X direction. The cross-sectional shape is roughly trapezoidal. The second reflector component 30b has an upper surface, a lower surface, and an inclined surface connecting the upper surface and the lower surface. The upper surface and the lower surface are parallel to the XZ plane respectively. The size of the lower surface in the X direction is equal to the size of the upper surface in the X direction. On the other hand, the size of the lower surface in the Z direction is smaller than the size of the upper surface in the Z direction. The normal direction of the inclined surface is a direction parallel to the YZ plane, and is a direction that forms an acute angle with the -Y direction and an acute angle with the +Z direction. The angle formed by the upper surface of the second reflector component 30b and the inclined surface is 45°, but is not limited to this angle, for example, it can also be greater than 30° and less than 60°. The angle formed by the upper surface of the second reflector component 30b and the inclined surface can be equal to or different from the angle formed by the lower surface of the first reflector component 30a and the inclined surface.

[0081] The second reflector component 30b has a second reflective surface 30bs on the above-mentioned inclined surface. At least a portion of the second reflective surface 30bs is located above at least a portion of the first reflective surface 30as. Figure 2F As shown, the second reflecting surface 30bs reflects the laser light L reflected by the first reflecting surface 30as, and changes the traveling direction of the laser light L to the +Z direction.

[0082] like Figure 2F As shown, there is a resin layer 32 between the lower surface of the second reflector component 30b and the upper surface 50us of the cover 50. In a state where the lower surface of the second reflector component 30b is in contact with the upper surface 50us of the cover 50 via the resin before curing, the resin is cured to form the resin layer 32. The resin can be, for example, a thermosetting resin that is cured by heating, or a photocurable resin that is cured by irradiation with ultraviolet rays or visible light. Before the resin is cured, the following active alignment is performed. That is, in a state where the laser light source 20 emits laser light L, the position and direction of the second reflector component 30b are appropriately adjusted so that the second reflecting surface 30bs changes the traveling direction of the laser light L to the +Z direction. Such an adjustment can be performed when the light emitting device 100 is configured in Figures 1 to 2. Figure 1C After being placed on the first mounting surface 60s1 of the support base 60 shown in the figure, the second reflector member 30b is held by a holding device.

[0083] By rotating the second reflector member 30b with the X-axis or the Y-axis as the rotation axis to change its direction, it is possible to adjust the traveling direction of the laser light L. By rotating the second reflector member 30b with the X-axis as the rotation axis, it is possible to change the traveling direction of the laser light L up and down. By rotating the second reflector member 30b with the Y-axis as the rotation axis, it is possible to make the traveling direction of the laser light L the front direction, and change the traveling direction of the laser light L left and right.

[0084] Furthermore, by changing the position of the second reflector member 30b in the Z direction, the height of the optical axis of the laser light L can be adjusted. By moving the second reflector member 30b in the +Z direction, the height of the optical axis of the laser light L can be reduced, and by moving the second reflector member 30b in the -Z direction, the height of the optical axis of the laser light L can be increased. In this specification, the "optical axis of the laser light" means an axis passing through the center of the far-field pattern of the laser light. The laser light entering along the optical axis shows a peak intensity in the light intensity distribution of the far-field pattern.

[0085] Here, unlike the present embodiment, a configuration in which the position and direction of the second reflector member 30b are not adjusted but fixed to the upper surface 50us of the cover 50 is taken as an example. Figure 1C In the light emitting module 200 shown, by configuring a wedge between the second reflector component 30b and the slow axis collimating lens 92, the traveling direction of the laser light L reflected by the second reflecting surface 30bs can also be directed toward the +Z direction. The wedge has a light incident surface and a light reflecting surface located on opposite sides. The normal direction of the light incident surface is parallel to the -Z direction, and the normal direction of the light exit surface is a direction parallel to the YZ plane, which is an acute angle with the +Y direction or the -Y direction and an acute angle with the +Z direction. Due to the refraction on the light incident surface and the light incident surface that are not parallel to each other, the wedge can change the traveling direction of the laser light L that transmits itself. However, when using a wedge, in order to direct the traveling direction of the laser light L toward the +Z direction, it is necessary to prepare a plurality of wedges with different normal directions of the light exit surface, and select a wedge from the plurality of wedges with the normal direction of the light exit surface being in an appropriate direction.

[0086] In contrast, in the present embodiment, by arranging the second reflector component 30b at an appropriate position and direction, the traveling direction of the laser light L reflected by the second reflecting surface 30bs can be directed toward the +Z direction regardless of whether the traveling direction of the laser light L emitted from the laser light source 20 deviates from the +Z direction. In the present embodiment, it is not necessary to prepare a plurality of second reflector components 30b having different angles between the upper surface and the inclined surface, and select a second reflector component 30b having an appropriate angle from the plurality of second reflector components 30b.

[0087] Figure 2B and Figure 2C The reflector components 30a, 30b shown in FIG. 1 to FIG. Figure 1C The reflector assembly 94 and Figure 1DThe reflector components 94a to 94c shown in the figure may include, for example, a table having an inclined surface and a reflective surface formed separately on the inclined surface. The table may be formed of at least one selected from the group consisting of, for example, glass, quartz, synthetic quartz, sapphire, ceramic, plastic, silicon, metal, silicone resin, and dielectric materials. The reflective surface may be formed of a reflective material such as a dielectric multilayer film and a metal material. The reflective surface is equivalent to Figure 2B The first reflecting surface 30as, the second reflecting surface 30bs, Figure 1A The reflecting surface 94s and Figure 1D Reflective surfaces 94as~94cs are shown.

[0088] Alternatively, the first reflector component 30a, the second reflector component 30b, and the reflector components 94, 94a to 94c may also include a platform having an inclined surface, and the platform is formed of the above-mentioned reflective material. In this case, the inclined surface of the platform corresponds to the first reflecting surface 30as, the second reflecting surface 30bs, and the reflecting surfaces 94s, 94as to 94cs.

[0089] <Frame 40>

[0090] like Figure 2B As shown, the frame 40 is located around the mounting surface 10us of the substrate 10. Figure 2A The support cover 50 is shown. Figure 2B As shown, the frame 40 surrounds the laser light source 20 and the first reflector component 30a when viewed from the +Y direction, that is, when viewed from above. Figure 2C As shown in FIG. 4 , the frame body 40 has a protrusion 40p protruding inward from the inner side surface. Figure 2E In the example shown, the protrusion 40p protrudes toward both side surfaces and the back surface of the sub-mount 21. The protrusion 40p may also protrude toward the front surface of the sub-mount 21. In addition, the protrusion 40p may protrude only toward both side surfaces. The front surface of the sub-mount 21 is located on the same side as the emission surface of the semiconductor laser element 22, and the back surface of the sub-mount 21 is located on the side opposite to the emission surface of the semiconductor laser element 22. The side surfaces of the sub-mount 21 connect the front surface and the back surface of the sub-mount 21.

[0091] like Figure 2C As shown, the frame 40 has a first upper surface 40us1 and a second upper surface 40us2. The second upper surface 40us2 is the upper surface of the protrusion 40p, is located below the first upper surface 40us1, and is surrounded by the first upper surface 40us1 when viewed from above. Figure 2E As shown, the second upper surface 40us2 has a roughly U-shape.

[0092] The first upper surface 40us1 is provided with a first bonding area 44a and an outer area 46 surrounding the first bonding area 44a. Each of the first bonding area 44a and the outer area 46 has a substantially rectangular ring shape. The first bonding area 44a improves the bonding strength when the cover 50 and the frame 40 are bonded via an inorganic bonding member such as solder. As for the outer area 46, the inorganic bonding member of the bonded cover 50 is suppressed from flowing out beyond the outer area 46. Figure 2E As shown, the first bonding region 44a and the outer region 46 surround the laser light source 20 and the first reflector component 30a in a plan view. On the first upper surface 40us1, a first conductive region 42a and a second conductive region 42b are provided which are electrically insulated from each other in the -Z direction.

[0093] A third conductive region 42c and a fourth conductive region 42d are provided on the second upper surface 40us2, which are electrically insulated from each other. The third conductive region 42c is electrically connected to the first conductive region 42a via internal wiring, and the fourth conductive region 42d is electrically connected to the second conductive region 42b via internal wiring. Figure 2E As shown, in a plan view, the laser light source 20 and the first reflector component 30a are located between the portion of the third conductive region 42c extending in the Z direction and the portion of the fourth conductive region 42d extending in the Z direction. The third conductive region 42c is connected to the upper surface of the sub-support 21 and Figure 2B The wire 40w shown as a part thereof is electrically connected to the semiconductor laser element 22. The fourth conductive region 42d is connected via Figure 2B The remaining wire 40w shown is electrically connected to the semiconductor laser element 22. Therefore, by applying a voltage between the first conductive region 42a and the second conductive region 42b, power can be supplied to the laser light source 20.

[0094] like Figure 2D As shown, the frame body 40 also has a first lower surface 40Ls1 and a second lower surface 40Ls2. The second lower surface 40Ls2 partially has a lower surface of the protrusion 40p, is located above the first lower surface 40Ls1, and is surrounded by the first lower surface 40Ls1 when viewed from the -Y direction, that is, when viewed from above. The second lower surface 40Ls2 has a substantially rectangular ring shape. Figure 2C The substrate 10 shown is partially or entirely contained in a space surrounded by the step between the first lower surface 40Ls1 and the second lower surface 40Ls2. When viewed through the frame 40, the outer periphery of the second lower surface 40Ls2 surrounds the outer periphery of the mounting surface 10us of the substrate 10 when viewed from above, and the inner periphery of the second lower surface 40Ls2 is surrounded by the outer periphery of the mounting surface 10us of the substrate 10 when viewed from above.

[0095] The second bonding region 44b is provided on the entire first lower surface 40Ls1. The second bonding region 44b is bonded to the first lower surface 40Ls1 through an inorganic bonding member such as solder. Figure 1C The third bonding area 44c is provided on the entire second lower surface 40Ls2. The third bonding area 44c is bonded to the peripheral area of ​​the mounting surface 10us of the substrate 10 via an inorganic bonding component such as solder. The third bonding area 44c improves the bonding strength when the substrate 10 and the frame 40 are bonded via an inorganic bonding component. The melting point of the solder is higher than the melting point of the solder. Therefore, when the solder is heated to bond the substrate 10 and the frame 40, and then the solder is heated to bond the substrate 10 and the laser light source 20, the possibility of the substrate 10 and the frame 40 being detached due to the heat applied to the solder can be reduced.

[0096] exist Figure 2D In the example shown, the second bonding area 44b is provided on the entire first lower surface 40Ls1, but the second bonding area 44b may be provided on a portion of the first lower surface 40Ls1. Figure 2D In the example shown, the third bonding area 44c is provided on the entire second lower surface 40Ls2, but the third bonding area 44c may be provided on a portion of the second lower surface 40Ls2. Alternatively, the second bonding area 44b may not be provided on the first lower surface 40Ls1, and the third bonding area 44c may not be provided on the second lower surface 40Ls2. In the case where the second bonding area 44b is not provided on the first lower surface 40Ls1, the frame 40 and the support base 60 are not bonded, and the substrate 10 and the support base 60 are bonded only through the lower surface 10Ls of the substrate 10.

[0097] exist Figure 2F In the example shown, the first lower surface 40Ls1 of the frame body 40 is located on the same plane as the lower surface 10Ls of the substrate 10. The first lower surface 40Ls1 of the frame body 40 may be located above the lower surface 10Ls of the substrate 10. Alternatively, if it does not interfere when the substrate 10 and the support base 60 are bonded via an inorganic bonding member, the first lower surface 40Ls1 of the frame body 40 may be located below the lower surface 10Ls of the substrate 10.

[0098] The frame 40 is similar to that shown in FIG. Figure 1B The frame 40 has a size in the X direction of, for example, 3 mm to 15 mm, a maximum size in the Y direction of, for example, 1 mm to 5 mm, and a size in the Z direction of, for example, 3 mm to 30 mm.

[0099] The conductive regions 42a to 42d, the bonding regions 44a to 44c, and the outer region 46 may be formed of at least one metal material selected from the group consisting of, for example, Ag, Cu, W, Au, Ni, Pt, and Pd. The conductive regions 42a to 42d, the bonding region 44a, and the outer region 46 may be formed, for example, by providing a metal film on the entire upper surfaces 40us1 and 40us2 and patterning the metal film by etching.

[0100] <Hood 50>

[0101] like Figure 2B As shown, the cover 50 has an upper surface 50us and a lower surface 50Ls. The lower surface 50Ls of the cover 50 is opposite to the mounting surface 10us of the substrate 10, and the upper surface 50us of the cover 50 is located on the opposite side of the lower surface 50Ls of the cover 50. In this specification, the lower surface 50Ls of the cover 50 is also referred to as the "opposite surface". The cover 50 is located above the semiconductor laser element 22 and the first reflector component 30a. The cover 50 transmits the laser light L reflected by the first reflection surface 30as.

[0102] The cover 50 has a light shielding film 52 at least around a light-transmitting region 50t that transmits the laser light L in the lower surface 50Ls. Figure 2C In the example shown, the light-transmitting region 50t has a rectangular shape, but the shape is not limited to this shape. The shape of the light-transmitting region 50t may be, for example, a circle or an ellipse.

[0103] Alternatively, the cover 50 may include a light shielding film 52 on at least a portion of the periphery of the light-transmitting region 50t in the lower surface 50Ls. For example, when a portion of the end of the light-transmitting region 50t coincides with a portion of the end of the lower surface 50Ls, the light shielding film 52 may be provided on at least a portion of the following region in the lower surface 50Ls. The region is a region adjacent to the remaining portion of the lower surface 50Ls other than the above-mentioned portion of the end of the light-transmitting region 50t.

[0104] The light shielding film 52 reduces the possibility that stray light other than the laser light L generated inside the light emitting device 100 leaks to the outside of the light emitting device 100. The light shielding film 52 also reduces the possibility that stray light other than the laser light L generated inside the light emitting device 100 leaks to the outside of the light emitting device 100. Figure 2F The resin layer 32 shown in the figure reduces the possibility that ultraviolet light or visible light reaches the laser light source 20. The light shielding film 52 further reduces the possibility that the return light of the laser light L emitted to the outside of the light emitting device 100 reaches the laser light source 20. If the irradiation of ultraviolet light or visible light or the return light can be reduced, the laser light source 20 is less likely to be damaged.

[0105] exist Figure 2CIn the example shown, the light shielding film 52 is disposed in the entire area of ​​the lower surface 50Ls other than the light-transmitting area 50t. The light shielding film 52 disposed in this way further reduces the possibility of the above-mentioned stray light leaking to the outside of the light-emitting device 100 and the possibility of the above-mentioned ultraviolet light or visible light or the above-mentioned return light reaching the laser light source 20.

[0106] In the cover 50, not only the light-transmitting region 50t but also the portion overlapping with the light-transmitting region 50t in a plan view transmits the laser light L. In the cover 50, the portion transmitting the laser light L has a transmittance of, for example, 60% or more, preferably 80% or more, with respect to the laser light L. The remaining portion of the cover 50 may or may not have such light transmittance.

[0107] The cover 50 is similar to that shown in FIG. Figure 1B The condenser lens 70 shown can also be formed of the above-mentioned light-transmitting material. The size of the cover 50 in the X direction is, for example, 3 mm to 15 mm, in the Y direction is, for example, 0.1 mm to 1.5 mm, and in the Z direction is, for example, 1 mm to 20 mm.

[0108] The light shielding film 52 can be formed of the above-mentioned metal material, for example, like the conductive regions 42a to 42d, the bonding regions 44a to 44c, and the outer region 46. The light shielding film 52 can be formed by providing a metal film on the entire lower surface 50Ls of the cover 50 and patterning the metal film by etching, for example, like the conductive regions 42a to 42d, the bonding region 44a, and the outer region 46.

[0109] The peripheral region of the light shielding film 52 is bonded to the first bonding region 44a provided on the first upper surface 40us1 of the frame 40 via an inorganic bonding member such as solder. When the light shielding film 52 is formed of the above-mentioned metal material, the light shielding film 52 improves the bonding strength when the cover 50 and the frame 40 are bonded via the inorganic bonding member.

[0110] In addition, in Figures 2 to Figure 2C In the example shown, the cover 50 has a flat plate shape, but is not limited to this shape. In the configuration in which the substrate 10 has a flat plate shape without the frame 40, the cover 50 may not be in a flat plate shape, but may have a box shape with an open bottom. The cover 50 having such a shape is supported by the mounting surface 10us of the substrate 10, and accommodates the laser light source 20 and the first reflector component 30a. In addition, the cover 50 having a box shape with an open bottom may be joined to the frame 40, and the laser light source 20 and the first reflector component 30a may be surrounded by the cover 50 and the frame 40.

[0111] In summary, according to this embodiment, it is possible to realize a light emitting device 100 that can reduce the deviation between the traveling direction of the laser light L and the designed traveling direction. Figure 1C The light emitting module 200 shown uses such a light emitting device 100 , and a plurality of laser lights L emitted from each of the plurality of light emitting devices 100 can be efficiently coupled and made incident on the optical fiber 80 .

[0112] The light emitting device 100 can be manufactured, for example, as follows. In the initial process, a substrate 10, a laser light source 20, a first reflector component 30a, a second reflector component 30b, a frame 40, a plurality of wires 40w, and a cover 50 are prepared. In the next process, the frame 40 is bonded to the substrate 10. In the next process, the laser light source 20 and the first reflector component 30a are arranged on the mounting surface 10us of the substrate 10. In the next process, a plurality of wires 40w for supplying power to the laser light source 20 are arranged. In the next process, the cover 50 is bonded to the frame 40. In the next process, active alignment is performed in a state where the lower surface of the second reflector component 30b is in contact with the upper surface 50us of the cover 50 via the resin before curing. In the next process, the resin is cured to form a resin layer 32 between the second reflector component 30b and the cover 50.

[0113] [DDL device]

[0114] Next, refer to Figure 3 A configuration example of a DDL device according to a third embodiment of the present disclosure will be described. Figure 3 FIG. 1 is a diagram schematically showing a configuration of a DDL device according to a third exemplary embodiment of the present disclosure. Figure 3 The DDL device 1000 shown in the figure includes a plurality of light emitting modules 200 of the present embodiment, a processing head 300, and a light transmission fiber 250 connecting the light emitting modules 200 and the processing head 300. Figure 3 In the example shown, the number of the light emitting modules 200 is 4, but the number is not limited to this number. The number of the light emitting modules 200 may be 1, 2, 3, or 5 or more.

[0115] The number of light emitting devices 100 included in each light emitting module 200 is determined according to the required light output or irradiance. The wavelength of the laser emitted from the light emitting device 100 can also be selected according to the material of the processing object. For example, when processing metals such as copper, brass, and aluminum, a semiconductor laser element with a central wavelength in the range of 350nm to 550nm can be appropriately used. The wavelengths of the lasers emitted from each light emitting device 100 do not need to be the same, and lasers with different central wavelengths can also be overlapped. In addition, when using a laser with a central wavelength outside the range of 350nm to 550nm, the effect of the present invention can also be obtained.

[0116] exist Figure 3In the example shown, the optical fiber 80 extends from each of the plurality of light emitting modules 200. The plurality of optical fibers 80 thus obtained are coupled to the optical transmission fiber 250 via the optical combiner 230. For example, the optical combiner 230 may be a TFB (Tapered Fiber Bundle). The processing head 300 converges the laser light emitted from the light emitting end of the optical fiber 80 and irradiates the laser light onto the object 400. In the case where one DDL device 1000 has M light emitting modules 200 and each light emitting module 200 has N light emitting devices 100, if the light output of one light emitting device 100 is P watts, a laser beam having a maximum light output of P×N×M watts can be converged onto the object 400. Here, N is an integer greater than 2, and M is a positive integer. For example, if P=20 watts, N=22, and M=12, a light output exceeding 5 kilowatts can be achieved.

[0117] [Configuration of Laser Light Source 20]

[0118] Next, refer to Figure 4A as well as Figure 4B ,right Figure 2C An example of the configuration of the laser light source 20 shown will be described. Figure 4A It is an exploded perspective view of the laser light source 20 . Figure 4B It is a cross-sectional view parallel to the YZ plane of the laser light source 20. Hereinafter, each component of the laser light source 20 will be described.

[0119] like Figure 4A As shown, the sub-support 21 has an upper surface 21us and a lower surface 21Ls parallel to the XZ plane. Metal films are provided on the upper surface 21us and the lower surface 21Ls, respectively. The metal film provided on the upper surface 21us improves the bonding strength when the semiconductor laser element 22 and the lens support component 23 are bonded to the sub-support 21 by an inorganic bonding component. The metal film provided on the upper surface 21us can also be used to supply power to the semiconductor laser element 22. The metal film provided on the lower surface 21Ls is bonded to the semiconductor laser element 22 by an inorganic bonding component. Figure 2B The metal films respectively provided on the upper surface 21us and the lower surface 21Ls also help to transfer the heat generated by the semiconductor laser element 22 during driving to the substrate 10 via the sub-mount 21. The sub-mount 21 is, for example, similar to FIG. 1 and Figure 1B The support substrate 60 shown is the same and may be formed from the above-mentioned ceramic, metal material or metal matrix composite material.

[0120] like Figure 4AAs shown, the semiconductor laser element 22 is supported by the upper surface 21us of the sub-support 21. The semiconductor laser element 22 has an exit surface 22e on one of the two end surfaces intersecting the Z direction, and emits laser light in the +Z direction from the exit surface 22e. As the laser light travels in the +Z direction, it expands at different speeds in the YZ plane and the XZ plane. The laser light expands relatively quickly in the YZ plane and relatively slowly in the XZ plane. The laser light spot has an elliptical shape with the Y direction as the major axis and the X direction as the minor axis in the XY plane in the far field without collimation.

[0121] The semiconductor laser element 22 can emit a purple, blue, green or red laser in the visible light region, or an infrared or ultraviolet laser in the invisible region. The peak emission wavelength of the purple light is preferably in the range of 400 nm to 420 nm, more preferably in the range of 400 nm to 415 nm. The peak emission wavelength of the blue light is preferably in the range of greater than 420 nm and less than 495 nm, more preferably in the range of greater than 440 nm and less than 475 nm. The peak emission wavelength of the green light is preferably in the range of greater than 495 nm and less than 570 nm, more preferably in the range of greater than 510 nm and less than 550 nm. The peak emission wavelength of the red light is preferably in the range of greater than 605 nm and less than 750 nm, more preferably in the range of greater than 610 nm and less than 700 nm.

[0122] As semiconductor laser elements 22 emitting violet, blue and green lasers, laser diodes containing nitride semiconductor materials can be cited. As nitride semiconductor materials, for example, GaN, InGaN and AlGaN can be used. As semiconductor laser elements 22 emitting red lasers, for example, laser diodes containing semiconductor materials of the InAlGaP series, GaInP series, GAs series and AlGAs series can be cited.

[0123] like Figure 4A As shown, the lens support member 23 is supported by the upper surface 21us of the sub-mount 21. The lens support member 23 has two columnar portions 23a and a connecting portion 23b located between the two columnar portions 23a and connecting the two columnar portions 23a. The two columnar portions 23a are located on both sides of the semiconductor laser element 22, and the connecting portion 23b is located above the side of the emission surface 22e of the semiconductor laser element 22. The lens support member 23 supports the fast axis collimating lens 24 through the end faces 23as of the two columnar portions 23a. The lens support member 23 is arranged across the semiconductor laser element 22, and does not prevent the laser light emitted from the semiconductor laser element 22 from being incident on the fast axis collimating lens 24.

[0124] The lens support member 23 is similar to that shown in FIG. 1 and Figure 1BThe support base 60 shown in FIG. 1 can also be formed of the above-mentioned ceramics. Figure 1B The condenser lens 70 shown in the figure can also be formed of the above-mentioned light-transmitting material. The lens support member 23 can be formed of at least one alloy selected from the group consisting of, for example, Kovar and CuW. The lens support member 23 can be formed of, for example, Si.

[0125] like Figure 4A As shown in FIG. 1 , the fast axis collimating lens 24 may be, for example, a cylindrical lens having the same cross-sectional shape in the X direction. The fast axis collimating lens 24 has a flat surface on the light incident side and a convex surface on the light exiting side. The convex surface has a curvature on the YZ plane. The focus of the fast axis collimating lens 24 is substantially consistent with the center of the light emitting point of the exit surface 22e of the semiconductor laser element 22. Figure 4B As shown in FIG. 1 , the fast axis collimating lens 24 collimates the laser light emitted from the emission surface 22e of the semiconductor laser element 22 in the +Z direction on the YZ plane. Figure 4B The area surrounded by the dashed line shows that the intensity of the laser is more than 1 / e2 times of its peak intensity. e is the base of the natural logarithm. The fast axis collimating lens 24 is similar to FIG. 1 and FIG. Figure 1B The condenser lens 70 shown can also be formed of the above-mentioned light-transmitting material.

[0126] like Figure 2F As shown, the fast axis collimator lens 24 is located between the mounting surface 10us of the substrate 10 and the lower surface 50Ls of the cover 50, and is located on the optical path of the laser light L. Since the fast axis collimator lens 24 is arranged inside the closed space formed by the substrate 10, the frame 40 and the cover 50, the laser light L can be collimated before the laser light L is greatly expanded. Therefore, the fast axis collimator lens 24 can be miniaturized.

[0127] Instead of the fast axis collimator lens 24, a collimator lens that collimates the laser light L emitted from the semiconductor laser element 22 not only in the YZ plane but also in the XZ plane may be used. Figure 1C The light emitting module 200 and Figure 1D In the light emitting module 210 shown, there is no need to provide the slow axis collimating lenses 92, 92a, 92b.

[0128] The present disclosure includes the light emitting devices described in the following items.

[0129] [Project 1]

[0130] A light emitting module comprises: a supporting base having a plurality of mounting surfaces arranged along a first direction;

[0131] A plurality of light emitting devices, wherein a corresponding light emitting device is arranged on each of the plurality of mounting surfaces, each of the light emitting devices comprising: a substrate having a mounting surface; a semiconductor laser element supported by the mounting surface; a first reflector component supported by the mounting surface; a cover having an opposing surface opposing the mounting surface of the substrate and an upper surface located on a side opposite to the opposing surface, the cover being located above the semiconductor laser element and the first reflector component; and a second reflector component supported by the upper surface of the cover;

[0132] a plurality of third reflector components;

[0133] Condenser lens;

[0134] The first reflector component has a first reflective surface, the first reflective surface is inclined relative to the mounting surface and faces obliquely upward.

[0135] The second reflector component has a second reflective surface, at least a portion of the second reflective surface is located above at least a portion of the first reflective surface,

[0136] The semiconductor laser element is configured to emit laser light toward the first reflection surface.

[0137] The first reflection surface reflects the laser light and changes the traveling direction of the laser light toward a direction away from the mounting surface of the substrate.

[0138] The cover transmits the laser light reflected by the first reflection surface.

[0139] The second reflecting surface reflects the laser light reflected by the first reflecting surface and further changes the traveling direction of the laser light to a second direction intersecting the first direction.

[0140] Each of the plurality of third reflective mirror components has a third reflective surface that reflects the laser light traveling in the second direction and changes the traveling direction of the laser light toward the first direction.

[0141] The condenser lens couples the laser beams emitted from each of the plurality of light emitting devices to the optical fiber, thereby obtaining the plurality of laser beams reflected by the third reflection surface.

[0142] [Project 2]

[0143] In the light emitting module as described in Item 1, a resin layer is present between the lower surface of the second reflector member and the upper surface of the cover.

[0144] [Item 3]

[0145] In the light emitting module described in item 1 or 2, the cover has a light shielding film at least around a region through which the laser light is transmitted on the opposing surface of the cover.

[0146] [Item 4]

[0147] The light emitting module according to any one of items 1 to 3 includes a fast axis collimator lens located between the mounting surface of the substrate and the facing surface of the cover and located on an optical path of the laser light.

[0148] [Item 5]

[0149] The light emitting module according to any one of items 1 to 4, wherein the substrate is formed of a material having a thermal conductivity of 10 W / m·K or more and 2000 W / m·K or less.

[0150] [Item 6]

[0151] The light emitting module according to any one of items 1 to 5, further comprising a frame, the frame being located around the mounting surface of the substrate and supporting the cover,

[0152] The semiconductor laser element is hermetically sealed by the substrate, the frame, and the cover.

[0153] Industrial Applicability

[0154] The light emitting device disclosed herein can be used to couple multiple lasers to achieve high-output lasers. In addition, the light emitting device disclosed herein can be used in industrial fields that require high-output laser light sources, such as cutting of various materials, opening holes, local heat treatment, surface treatment, metal welding, and 3D printing.

[0155] Description of Reference Numerals

[0156] 10: Substrate 10us: Mounting surface 10Ls: Lower surface 20: Laser light source 21: Sub-mount 21Ls: Lower surface 21us: Upper surface 22: Semiconductor laser element 22e: Emission surface 23: Lens support member 23a: Columnar portion 23as: End surface 23b: Connecting portion 24: Fast axis collimating lens 30a: First reflector member 30as: First reflection surface 30b: Second reflector member 30bs: Second reflection surface 32: Resin layer 40: Frame 40us1: First upper surface 40us2: Second upper surface 40Ls1: First lower surface 40Ls2: Second lower surface 40p: Protrusion 40w: Wire 42a: First conductive region 42b: Second conductive region 42c: Third conductive region 42d: Fourth conductive region 44a: First bonding region 44b: Second bonding region 44c: Third bonding region 46: Outer region 50: Cover 50us: Upper surface 50Ls: Lower surface Surface 50t: light-transmitting area 52: light-shielding film 60, 62: support base 60-1, 62-1: first portion 60-2, 62-2: second portion 60-3, 62-3: third portion 60s1: first mounting surface 60s2: second mounting surface 60s3: third mounting surface 70: condenser lens 70a: fast axis condenser lens 70b: slow axis condenser lens 80: optical fiber 80a: light incident end 80b: light emitting end 82: support member 92: slow axis Collimating lens 92a: slow axis collimating lens 92b: slow axis collimating lens 94, 94a, 94b, 94c: reflector components 94s, 94as, 94bs, 94cs: reflecting surface 96: 1 / 2 wavelength plate 98: polarization beam splitter 100, 100-1, 100-2: light emitting device 200, 210: light emitting module 230: optical combiner 250: optical transmission fiber 300: processing head 400: object 1000: DDL device.

Claims

1. A light emitting module, characterized in that: have: A supporting base having a plurality of mounting surfaces arranged along a first direction; A plurality of light emitting devices, wherein a corresponding light emitting device is arranged on each of the plurality of mounting surfaces, each of the light emitting devices comprising: a substrate having a mounting surface; a semiconductor laser element supported by the mounting surface; a first reflector component supported by the mounting surface; a cover having an opposing surface opposing the mounting surface of the substrate and an upper surface located on a side opposite to the opposing surface, the cover being located above the semiconductor laser element and the first reflector component; and a second reflector component supported by the upper surface of the cover; a plurality of third reflector components; Condenser lens; The first reflector component has a first reflective surface, the first reflective surface is inclined relative to the mounting surface and faces obliquely upward. The second reflector component has a second reflective surface, at least a portion of the second reflective surface is located above at least a portion of the first reflective surface, The semiconductor laser element is configured to emit laser light toward the first reflection surface. The first reflection surface reflects the laser light and changes the traveling direction of the laser light toward a direction away from the mounting surface of the substrate. The cover transmits the laser light reflected by the first reflection surface. The second reflecting surface reflects the laser light reflected by the first reflecting surface and further changes the traveling direction of the laser light to a second direction intersecting the first direction. Each of the plurality of third reflective mirror components has a third reflective surface that reflects the laser light traveling in the second direction and changes the traveling direction of the laser light toward the first direction. The condenser lens couples the laser beams emitted from each of the plurality of light emitting devices to the optical fiber, thereby obtaining the plurality of laser beams reflected by the third reflection surface.

2. The light emitting module according to claim 1, wherein: A resin layer is present between the lower surface of the second reflector member and the upper surface of the cover.

3. The light emitting module according to claim 1 or 2, wherein: The cover has a light shielding film at least around a region through which the laser beam is transmitted on the opposing surface of the cover.

4. The light emitting module according to any one of claims 1 to 3, characterized in that: A fast-axis collimator lens is provided. The fast-axis collimator lens is located between the mounting surface of the substrate and the facing surface of the cover and is located on an optical path of the laser beam.

5. The light emitting module according to any one of claims 1 to 4, characterized in that: The substrate is formed of a material having a thermal conductivity of 10 W / m·K or more and 2000 W / m·K or less.

6. The light emitting module according to any one of claims 1 to 5, characterized in that: A frame is provided, the frame being located around the mounting surface of the substrate and supporting the cover, The semiconductor laser element is hermetically sealed by the substrate, the frame, and the cover.

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