A photoelectric device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule and a preparation method thereof

Abstract

The invention relates to the technical field of electroluminescent photoelectric devices, and in particular to a photoelectric device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule and a preparation method thereof. The spin Hall effect detection layer of the photoelectric device comprises a platinum film and a non-magnetic metal detection electrode, wherein the non-magnetic metal detection electrode is arranged at the side edge in the length direction of the platinum film; a graphene point electrode is arranged at the side edge in the width direction of the upper surface of an insulating layer; two ends of a molecular heterojunction are respectively connected to the graphene point electrode through an amide bond to form a graphene point electrode-molecule heterojunction array; a magnetic metal electrode is arranged at the outer edge in the width direction of the upper surface of the graphene point electrode; the photoelectric device combines the excellent photoelectric performance of a rare earth complex with molecular electronics technology, thereby improving the detection sensitivity of the photoelectric device at a single molecule level; the preparation method has mild reaction conditions and simple operation, and is conducive to the popularization and use of the photoelectric device.

Description

Technical Field

[0001] The invention relates to the technical field of electroluminescent photoelectric devices, and in particular to a photoelectric device based on electroluminescent circularly polarized luminescence of a single chiral rare earth complex molecule and a preparation method thereof. Background Art

[0002] With the development of nanotechnology and molecular electronics, organic molecular circularly polarized electroluminescence (CPEL) has received extensive attention. Among them, chiral rare earth complexes are particularly prominent in the field of electroluminescence due to their unique optical and magnetic properties. The rich f orbital electrons of rare earth elements make chiral rare earth complexes exhibit excellent optical activity. By precisely regulating the ligand structure and substituents of chiral rare earth complexes, the electronic and optical properties of molecules can be effectively adjusted, thereby enhancing the function of the device and expanding its application in the fields of optical information storage, sensing and biomarkers. However, the molecular electro-induced circularly polarized luminescence optoelectronic devices in the current prior art are insufficiently sensitive at the molecular level, which limits their application.

[0003] Therefore, how to provide an optoelectronic device with excellent optoelectronic properties and high sensitivity is a technical problem that urgently needs to be solved. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the related art. To this end, the first object of the present invention is to provide an optoelectronic device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule; the second object of the present invention is to provide a method for preparing the optoelectronic device.

[0005] In order to achieve the first purpose, the technical solution adopted by the present invention is:

[0006] A photoelectric device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule, comprising a substrate, a spin Hall effect detection layer, a spin regulation buffer layer, a light-excited spin source layer and an insulating layer arranged in sequence from bottom to top along the height direction;

[0007] Wherein, the spin Hall effect detection layer comprises a platinum film and a non-magnetic metal detection electrode, the platinum film covers the substrate, and the non-magnetic metal detection electrode is arranged on the side edge of the platinum film in the length direction;

[0008] It also includes a graphene point electrode, a molecular heterojunction and a magnetic metal electrode, wherein the graphene point electrode is arranged at the side edge of the upper surface of the insulating layer in the width direction, and the two ends of the molecular heterojunction are respectively connected to the graphene point electrode through an amide bond to form a graphene point electrode-molecular heterojunction array, and the magnetic metal electrode is arranged at the outer edge of the upper surface of the graphene point electrode in the width direction;

[0009] Wherein, the molecular heterojunction is composed of chiral rare earth complex molecules, and the structural formula of the chiral rare earth complex molecules is as follows:

[0010] ;

[0011] Wherein, R is any one of europium (Eu), gallium (Ga), gadolinium (Gd) and terbium (Tb);

[0012] Taking rare earth ions europium (Eu), gallium (Ga), gadolinium (Gd) or terbium (Tb) with high luminescence quantum efficiency as the luminescence center, the coordination group of the complex has point chirality. These chiral coordination environments can induce the luminescence of Eu ions to exhibit circular polarization characteristics. The molecules present an eight-coordinated geometric configuration, forming a relatively rigid structure, which helps to maintain the stability of the coordination environment, thereby achieving efficient and stable circularly polarized electroluminescence (CPEL).

[0013] Platinum film (Pt) is used as the spin Hall effect detection layer. Pt has a high spin Hall angle and can efficiently convert spin current into charge current. Through this spin Hall effect, the spin polarized current flowing through the Pt layer can be converted into a transverse charge current, thereby generating a measurable spin Hall voltage. The change in spin Hall voltage reflects the spin-related behavior in the circularly polarized luminescence process in the chiral rare earth complex molecules, thereby ensuring that the detection data of the optoelectronic device based on the electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule is more accurate.

[0014] The magnetic metal electrode injects spin-polarized carriers, which can induce the ff electrons of the rare earth ions in the chiral rare earth complex molecules to produce electric and magnetic dipole transitions, and the chiral properties of the molecules enhance the symmetry breaking of these transitions, thereby generating circularly polarized light emission. In the photoexcited spin source layer, these generated circularly polarized lights generate spin currents due to the spin Hall effect, and form a measurable transverse voltage signal in the spin Hall effect detection layer through the inverse spin Hall effect, thereby realizing the electrical detection of circularly polarized light signals.

[0015] There is no particular limitation on the type of the substrate, as long as the purpose of the present application can be achieved. For example, the substrate may be an atomically flat silicon wafer, mica or sapphire.

[0016] Preferably, R in the structural formula is europium (Eu).

[0017] Preferably, the non-magnetic metal detection electrode material is selected from any one of Cu, Cr and Au.

[0018] Preferably, the spin regulation buffer layer is deposited from magnesium oxide, and the thickness of the spin regulation buffer layer is 1 nm to 3 nm. MgO has excellent interface control properties and can effectively improve the interface quality between the magnetic layer and the platinum film. By inserting an ultra-thin MgO layer between the two, the spin scattering effect at the interface can be reduced, the spin mixing conductivity can be enhanced, and the efficiency of injecting spin polarized electrons into the platinum film can be improved.

[0019] Preferably, the photoexcited spin source layer is a tantalum (Ta) film, and the thickness of the photoexcited spin source layer is 3nm to 7nm. Tantalum is a heavy metal material with a strong spin-orbit coupling effect, which can efficiently produce the spin Hall effect. When current flows through the tantalum layer, the current is converted into a spin current through the spin-orbit coupling effect, and the generated spin current can be further detected by the inverse spin Hall effect. The negative spin Hall angle of the tantalum layer helps to enhance the generation of spin currents. These spin currents are converted into transverse charge currents in the spin Hall effect detection layer, thereby generating a transverse voltage signal. The strong spin-orbit coupling effect of the tantalum material ensures the efficient generation of spin currents, thereby improving the sensitivity and signal strength of the device in the detection of single-molecule electro-induced circularly polarized luminescence.

[0020] Preferably, the insulating layer is made of an inorganic material, the inorganic material is selected from any one of a silicon oxide material and an aluminum oxide material, and the insulating layer has a thickness of 2 nm to 5 nm.

[0021] Preferably, the insulating layer is made of aluminum oxide material, and aluminum oxide (AL2O3) is used as the insulating layer. Aluminum oxide has a high dielectric constant, and this property helps to effectively block the direct current coupling between the magnetic electrode and the spin Hall effect layer, thereby reducing energy loss and electrical interference, while allowing spin information to be transferred from the graphene layer to the spin Hall effect layer through tunneling effect or other spin transfer mechanisms, thereby optimizing the transmission efficiency of spin information.

[0022] Preferably, the magnetic metal electrode material is selected from Ni.

[0023] Preferably, a protective layer is further included, and the protective layer covers the insulating layer. The material of the protective layer is not specifically limited, and for example, it can be a polydimethylsiloxane (PDMS) protective layer.

[0024] In order to achieve the second purpose, the technical solution adopted by the present invention is:

[0025] A method for preparing an optoelectronic device, for preparing any of the above-mentioned optoelectronic devices based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule, comprising the following steps:

[0026] S100, sequentially preparing a spin Hall effect detection layer and a spin regulation buffer layer on a substrate;

[0027] S200, sequentially preparing a light-excited spin source layer and an insulating layer on the spin-regulating buffer layer;

[0028] S300, preparing a graphene point electrode on the insulating layer;

[0029] S400, introducing a molecular heterojunction into the graphene point electrode, so that two ends of the molecular heterojunction are respectively connected to the graphene point electrode to form a graphene point electrode-molecular heterojunction array;

[0030] S500, covering the upper surface of the graphene point electrode-molecule heterojunction array with a protective layer to obtain a photoelectric device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule.

[0031] Preferably, in step S400, the molecular heterojunction is introduced by the following steps:

[0032] S401, placing the graphene dot electrode in a reaction system, then adding 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide and a monochiral rare earth complex into the reaction system, and injecting anhydrous pyridine into the reaction system under an inert gas atmosphere to obtain a mixed solution;

[0033] S402, placing the mixed solution in a light-proof condition and reacting for 36 hours to 72 hours, so that the chiral rare earth complex molecules are connected to the graphene point electrodes through amide bonds to obtain a graphene point electrode-molecule heterojunction array.

[0034] The above one or more technical solutions in the embodiments of the present invention have at least one of the following technical effects:

[0035] The present invention provides a photoelectric device based on the electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule. The single chiral rare earth complex molecule is stably connected between graphene point electrodes through an amide covalent bond, spin-polarized carriers are injected through a magnetic metal electrode, and ff electron transitions of rare earth ions in the chiral rare earth complex molecule are induced to generate circularly polarized luminescence, thereby generating a spin current in a light-excited spin source layer, and the transverse voltage is detected in a spin Hall effect detection layer based on the inverse spin Hall effect to achieve electrical detection of circularly polarized light signals. The photoelectric device combines the excellent photoelectric properties of the rare earth complex molecule with molecular electronics technology, thereby improving the detection sensitivity of the photoelectric device at the single molecule level.

[0036] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 It is a schematic diagram of the three-dimensional structure of an optoelectronic device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule provided in Example 2 of the present invention.

[0038] Figure 2 This is a current-bias diagram of a photoelectric device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule provided in Example 2 of the present invention.

[0039] Figure 3 It is a Hall voltage diagram of a spin Hall effect detection layer of a photoelectric device based on electroinduced circularly polarized luminescence of a single chiral rare earth complex molecule provided in Detection Example 1 of the present invention.

[0040] Reference numerals:

[0041] 1. Substrate; 2. Spin Hall effect detection layer; 21. Platinum film; 22. Non-magnetic metal detection electrode; 3. Spin regulation buffer layer; 4. Photoexcited spin source layer; 5. Insulating layer; 6. Graphene point electrode; 7. Molecular heterojunction; 8. Magnetic metal electrode; 9. Protective layer. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical scheme and advantages of the present invention clearer, the technical scheme of the present invention will be clearly and completely described below in conjunction with the drawings in the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present invention. The following embodiments are used to illustrate the present invention, but cannot be used to limit the scope of the present invention.

[0043] In the following examples, the experimental methods used are conventional methods unless otherwise specified, and the materials, reagents, etc. used are all available from commercial sources unless otherwise specified.

[0044] The Schleck technique is an experimental technique for providing an inert environment and vacuum conditions. All chemical reactions in this application were carried out using the standard Schleck technique in a dry solvent and inert gas atmosphere.

[0045] Example 1 Preparation of chiral rare earth complexes.

[0046] The preparation route of the chiral rare earth complex is as follows:

[0047]

[0048]

[0049] Compound Ⅰ (0.593 g) and 4-(aminomethyl)benzoyl chloride (0.169 g) were weighed and added to a dry double-necked flask equipped with a stirrer. 20 mL of N,N-dimethylformamide (DMF) was added as a solvent to dissolve all the reactants in the DMF solvent to obtain a mixed solution. Then, K2CO3 (0.274 g) was added to the mixed solution. The reaction system was heated to 60°C in a nitrogen-filled environment and stirred at this temperature for 12 hours to promote the complete reaction. After the reaction was completed, the mixed solution was cooled to room temperature. The reaction was quenched by adding water, and the reaction product was extracted with dichloromethane (DCM). The organic phase was separated and dried over anhydrous magnesium sulfate. Thereafter, the solvent was removed by rotary evaporation to obtain a crude product. The crude product was purified by silica gel column chromatography, and the elution solvent was petroleum ether / dichloromethane (volume ratio of 1:1) to obtain compound Ⅱ.

[0050] Weigh the compound II (0.222 g) and Eu(OTf)3 (0.150 g) prepared above, where Eu(OTf)3 is europium trifluoromethanesulfonate, and add the two in turn to a dry double-necked flask equipped with a stirrer. Add acetonitrile (10 mL) as a solvent in a nitrogen-filled environment to dissolve all the reactants. Stir the reaction at room temperature for 8 hours to promote the complete reaction. Remove the solvent by rotary evaporation to obtain the target complex. The NMR results of the target complex are as follows:

[0051] 1 H NMR (500 MHz, Chloroform-d): δ 8.61 (s, 2H) 8.27 (s, 1H) 8.08–7.97 (m, 6H) 7.62–7.52 (m, 5H) 7.32–7.28 (m, 2H) 7.27–7.24 (m, 4H) 6.99–6.98 (m, 2H) 6.83–6.80 (m, 4H) 4.97 (t, J = 6.8 Hz, 1H) 4.31 (d, J = 6.8 Hz, 4H) 3.62–3.52 (m, 6H) 3.25 (t, J = 7.1 Hz, 2H) 3.10 (t, J = 7.0 Hz, 1H) 2.87–2.61 (m, 2H) 2.65 (t, J = 7.1 Hz, 4H) 2.48–2.46 (t, J =7.1 Hz, 12H) 1.61 (s, 3H) 1.38 (s, 3H) 1.22 (s, 3H).

[0052] Mass-to-nuclear ratio: m / z: 351.8176.

[0053] Example 2 Preparation of optoelectronic devices based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule.

[0054] like Figure 1 As shown, a photoelectric device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule comprises a substrate 1, a spin Hall effect detection layer 2, a spin regulation buffer layer 3, a light-excited spin source layer 4 and an insulating layer 5 arranged in sequence from bottom to top along the height direction;

[0055] The spin Hall effect detection layer 2 includes a platinum film 21 and a non-magnetic metal detection electrode 22, wherein the platinum film 21 covers the substrate 1, and the non-magnetic metal detection electrode 22 is arranged at the side edge of the platinum film 21 in the length direction;

[0056] It also includes a graphene point electrode 6, a molecular heterojunction 7 and a magnetic metal electrode 8, wherein the graphene point electrode 6 is arranged at the side edge of the upper surface of the insulating layer 5 in the width direction, and the two ends of the molecular heterojunction 7 are respectively connected to the graphene point electrode 6 through an amide bond to form a graphene point electrode-molecular heterojunction array, and the magnetic metal electrode 8 is arranged at the outer edge of the upper surface of the graphene point electrode 6 in the width direction;

[0057] The molecular heterojunction 7 is composed of chiral rare earth complex molecules, and the structural formula of the chiral rare earth complex molecules is as follows:

[0058] ;

[0059] Wherein, R is europium (Eu);

[0060] The substrate 1 is a substrate having a P-type doped silicon-based layer and a silicon dioxide (SiO2) oxide layer;

[0061] The material of the non-magnetic metal detection electrode 22 is selected from Cu, and its thickness is 20nm;

[0062] The spin regulation buffer layer 3 is deposited from magnesium oxide and has a thickness of 1 nm;

[0063] The optically excited spin source layer 4 is a tantalum (Ta) thin film with a thickness of 7 nm;

[0064] The material of the insulating layer 5 is an Al2O3 film with a thickness of 2 nm;

[0065] The thickness of the platinum film 21 is 30 nm;

[0066] The material of the magnetic metal electrode 8 is Ni, and its thickness is 70nm;

[0067] The protective layer 9 is a PDMS protective layer, which covers the insulating layer and has a thickness of 50 nm.

[0068] The preparation process of optoelectronic devices based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule is as follows:

[0069] A P-type doped silicon-based and silicon dioxide (SiO2) oxide layer substrate was selected, and the substrate was placed in a piranha solution and heated at 110°C for 4 hours. The substrate was then placed in ultrapure water for ultrasonic cleaning, and then dried with nitrogen for later use. The piranha solution was a mixed solution of 35% H2O2 and concentrated H2SO4 in a volume ratio of 3:7.

[0070] A 30nm thick platinum (Pt) film was grown on the substrate surface by UV lithography and magnetron sputtering coating, and then a 20nm thick non-magnetic metal detection electrode was prepared by UV lithography and thermal resistance evaporation coating to obtain a spin Hall effect detection layer.

[0071] A 1nm thick magnesium oxide (MgO) spin control buffer layer was prepared on the surface of the platinum film by atomic layer deposition.

[0072] By magnetron sputtering, a 7nm thick tantalum (Ta) film is grown on the surface of the spin control buffer layer to obtain a photoexcited spin source layer.

[0073] Using atomic layer deposition technology, a layer of Al2O3 film is grown on the surface of the spin Hall effect detection layer to obtain an insulating layer with a thickness of 2nm;

[0074] The copper foil is cleaned, and then chemical vapor deposition is performed on the surface of the copper foil to obtain a single layer of graphene. The operation process is as follows: the copper foil is placed in a tube furnace and heated to 1050°C, hydrogen is introduced for 1 hour, and then the gas flow rate is adjusted and methane is introduced, and finally the heating is turned off, and the gas is turned off in sequence as the temperature drops, to obtain a single layer of graphene deposited on the copper foil;

[0075] Using polymethyl methacrylate (PMMA) as a transfer medium, a wet transfer method is used to transfer the graphene layer on the copper foil to the insulating layer. The operation process is as follows: spin-coating PMMA on the surface of the copper foil on which the single-layer graphene is deposited, and removing the graphene on the back of the copper foil by a reactive ion etcher to obtain a PMMA-graphene-copper foil sandwich structure; placing the PMMA-graphene-copper foil in a ferric chloride solution for etching, transferring it to dilute hydrochloric acid, ultrapure water, potassium hydroxide, dilute hydrochloric acid and ultrapure water for rinsing, and then transferring it to a substrate loaded with a spin Hall effect detection layer, a spin regulation buffer layer and a light-excited spin source layer after cleaning, and removing the PMMA layer on the PMMA-graphene by immersion in 70° C. acetone to obtain a graphene film on the substrate;

[0076] A strip-shaped graphene electrode layer is prepared on the graphene film by using an ultraviolet photolithography machine and a reactive ion etcher, wherein the thickness of the graphene electrode layer is 0.7 nm;

[0077] A Ni metal magnetic electrode is prepared on the graphene strip layer using a UV lithography machine and a magnetron sputtering coating machine. The thickness of the metal magnetic electrode is 70 nm.

[0078] The graphene electrode layer obtained above is subjected to electron beam exposure and reactive ion etching to form a gap of 2 nm to obtain a graphene nanodot electrode, wherein the graphene nanodot electrode includes a graphene source electrode and a graphene drain electrode located at both ends in the length direction;

[0079] The graphene source electrode, the graphene drain electrode and the two ends of the molecular heterojunction are connected through an amide bond to obtain a graphene point electrode-molecular heterojunction array. The operation process is as follows: the graphene nanodot electrode is placed in a two-necked flask, 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide (5.48 mg) and the unichiral rare earth complex molecule (0.92 mg) are added to the two-necked flask, the two-necked flask is sealed and ventilated to place the two-necked flask in a nitrogen atmosphere, and then 10 ml of anhydrous pyridine is injected into the two-necked flask to obtain a mixed solution, which is reacted in a dark environment for 48 hours to obtain a graphene point electrode-molecular heterojunction array, which is taken out and washed with ultrapure water and acetone, and then dried with nitrogen.

[0080] The upper surface of the dried graphene dot electrode-molecule heterojunction array is covered with a 50nm thick PDMS protective layer to obtain an optoelectronic device based on single chiral rare earth complex molecule electro-induced circularly polarized luminescence. PDMS has good optical transparency, and while preventing the external environment from damaging the device, it can prevent current leakage and reduce interference noise.

[0081] The volt-ampere characteristics of the photoelectric device of the electro-induced circularly polarized luminescence of the obtained single chiral rare earth complex molecule were tested, and the following results were obtained: Figure 2 The I / V curve shown in the figure shows that the single chiral rare earth complex molecule provided by the present invention is connected to the graphene point electrode, and the electro-induced circularly polarized luminescent photoelectric device of the single chiral rare earth complex molecule provided by the present invention is successfully prepared.

[0082] Test Example 1

[0083] The spin Hall effect detection layer in the electro-induced circularly polarized luminescence photoelectric device of the single chiral rare earth complex molecule obtained in Example 2 was subjected to electro-induced circularly polarized luminescence detection.

[0084] 1. Build the optical system. The operation process is as follows: fix the laser assembly stably on the optical platform to ensure that the laser beam is perpendicular to the sample plane. The laser assembly consists of two parts: the laser and the linear polarizer. Install a linear polarizer (Thorlabs PV1-PC) in the laser output path. Adjust the angle of the polarizer so that the laser beam is perpendicular to the optical axis of the objective lens and has a high degree of polarization (≥99%). Then select a 100x oil immersion objective to ensure high optical resolution and high photon collection efficiency.

[0085] 2. Configuring polarization beam splitting and detection paths mainly involves the installation of polarization beam splitters, half-wave plates, bandpass filters, and high-sensitivity cameras. The operation process is as follows: First, install a polarization beam splitter (ThorlabsPBS025) in the transmission path; then, install a half-wave plate in each polarization path output by the polarization beam splitter, and adjust the angle to optimize polarization separation; finally, connect a high-sensitivity camera (Andor iXon EMCCD) to the left-handed circular polarization (LCP) and right-handed circular polarization (RCP) paths, respectively, to ensure independent capture of left-handed and right-handed CPL signals; adjust the camera's exposure time to 20ms to optimize signal capture and reduce noise.

[0086] 3. Integrated electrical detection system: Place the entire electrical detection system in a metal shielding box and equip it with a shock absorption system to minimize the impact of external interference such as sound, magnetism, electricity, and shock on the detection system; Use a probe or conductive silver glue to connect the magnetic source electrode and the magnetic drain electrode to ensure that under the action of an external magnetic field, the spin-polarized current is effectively injected into the graphene channel through the current amplifier and the phase-locked amplifier; Use a probe or conductive silver glue to connect the non-magnetic metal detection electrode, and measure the spin Hall voltage (V SH )Signal.

[0087] Fourth, calibrate the optical and electrical systems and configure the synchronous control system. The operation process is as follows: Use a standard polarized light source with a known polarization state to calibrate the polarization beam splitter and half-wave plate to ensure the accurate separation of left-handed circularly polarized light and right-handed circularly polarized light signals, thereby achieving optical calibration; Use a standard sample with a known spin polarization current to calibrate the spin Hall effect detection layer, and test the low-noise amplifier and differential measurement technology to ensure the spin Hall voltage (V SH ) to ensure stable signal acquisition and accuracy of the detection system, thereby achieving electrical calibration; through the trigger and high-speed data interface in the control system, the optical and electrical systems are synchronously controlled to achieve synchronous data acquisition.

[0088] 5. Conduct CPEL detection experiments and data analysis. The operation process is as follows: After applying the initial voltage between the magnetic source and drain electrodes, let the optical and electrical systems run stably for at least 30 minutes to ensure the stability of temperature and current and reduce signal drift; use the program to control the power supply and gradually apply different voltages (V D ), select the voltage range as -10V~10V, and set the voltage step size as 0.5V; the chiral molecule generates CPEL under the drive of spin polarization current, and the luminescence signal is collected by a high-aperture oil-immersion objective. The polarization beam splitter separates the emitted circularly polarized signal into left-handed and right-handed signals, and the signals are captured separately by the EMCCD camera to record the polarization characteristics of single-molecule luminescence; at the same time, the spin Hall effect detection layer converts the spin polarization current into a transverse charge current, and generates a spin Hall voltage (V SH ) signal, and obtain the Hall voltage diagram of the spin Hall effect detection layer in the optoelectronic device based on the electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule, such as Figure 3 shown.

[0089] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An optoelectronic device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule, characterized in that: The method comprises sequentially arranging a substrate, a spin Hall effect detection layer, a spin regulation buffer layer, a light-excited spin source layer and an insulating layer from bottom to top along a height direction; Wherein, the spin Hall effect detection layer comprises a platinum film and a non-magnetic metal detection electrode, the platinum film covers the substrate, and the non-magnetic metal detection electrode is arranged on the side edge of the platinum film in the length direction; Wherein, the light-excited spin source layer is a tantalum film, and the material of the insulating layer is an inorganic material; The optoelectronic device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule also includes a graphene point electrode, a molecular heterojunction and a magnetic metal electrode, wherein the graphene point electrode is arranged at the side edge in the width direction of the upper surface of the insulating layer, and the two ends of the molecular heterojunction are respectively connected to the graphene point electrode through an amide bond to form a graphene point electrode-molecular heterojunction array, and the magnetic metal electrode is arranged at the outer edge in the width direction of the upper surface of the graphene point electrode; Wherein, the molecular heterojunction is composed of a single chiral rare earth complex molecule, and the structural formula of the chiral rare earth complex molecule is as follows: ； Here, R is any one of europium, gallium, gadolinium and terbium.

2. The optoelectronic device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule according to claim 1, characterized in that: R in the structural formula is europium.

3. The optoelectronic device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule according to claim 1, characterized in that: The material of the non-magnetic metal detection electrode is selected from any one of Cu, Cr and Au.

4. The optoelectronic device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule according to claim 1, characterized in that: The spin regulation buffer layer is formed by depositing magnesium oxide, and the thickness of the spin regulation buffer layer is 1 nm to 3 nm.

5. The optoelectronic device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule according to claim 1, characterized in that: The thickness of the optically excited spin source layer is 3 nm to 7 nm.

6. The optoelectronic device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule according to claim 1, characterized in that: The inorganic material is selected from any one of silicon oxide material and aluminum oxide material, and the thickness of the insulating layer is 2nm-5nm.

7. The optoelectronic device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule according to claim 1, characterized in that: The magnetic metal electrode material is Ni.

8. The optoelectronic device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule according to claim 1, characterized in that: The optoelectronic device based on the electro-circularly polarized luminescence of a single chiral rare earth complex molecule further comprises a protective layer, which covers the insulating layer.

9. A method for preparing a photoelectric device, characterized in that: The method for preparing the optoelectronic device based on the electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule as claimed in claim 8 comprises the following steps: S100, sequentially preparing a spin Hall effect detection layer and a spin regulation buffer layer on a substrate; S200, sequentially preparing a light-excited spin source layer and an insulating layer on the spin-regulating buffer layer; S300, preparing a graphene point electrode on the insulating layer; S400, introducing a molecular heterojunction into the graphene point electrode, so that two ends of the molecular heterojunction are respectively connected to the graphene point electrode to form a graphene point electrode-molecular heterojunction array; S500, covering the upper surface of the graphene point electrode-molecule heterojunction array with a protective layer to obtain a photoelectric device based on electro-induced circularly polarized luminescence of a single chiral rare earth complex molecule.

10. The method for preparing a photoelectric device according to claim 9, characterized in that: In step S400, the molecular heterojunction is introduced by the following steps: S401, placing the graphene dot electrode in a reaction system, then adding 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide and a chiral rare earth complex into the reaction system, and injecting anhydrous pyridine into the reaction system under an inert gas atmosphere to obtain a mixed solution; S402, placing the mixed solution in a light-proof condition and reacting for 36 hours to 72 hours, so that a single chiral rare earth complex molecule is connected to the graphene point electrode through an amide bond to obtain a graphene point electrode-molecule heterojunction array.

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