Metallized ceramic substrate and preparation method thereof

Abstract

The invention discloses a metallized ceramic substrate and a preparation method thereof. The metallized ceramic substrate comprises a ceramic substrate, and a Ti thin film layer, a Pu thin film layer and an Au thin film layer which are sequentially deposited on the ceramic substrate in a magnetron sputtering coating manner. The ceramic substrate is a commercial aluminum oxide ceramic substrate or a commercial aluminum nitride ceramic substrate. The surface, needing to be plated with the metal film layer, of the ceramic substrate needs to be polished, and the surface roughness of the polished surface is 100 nm. The thickness of the Ti thin film layer is 100 nm, the thickness of the Pu thin film layer is 200 nm, and the thickness of the Au thin film layer is 500 nm. The multi-layer metal film can increase the binding force between the metal film layer and the ceramic substrate, prevents the metallization layer from being separated from the ceramic substrate in the service process, improves the metallization strength, and can be widely applied to the field of various electronic components.

Description

Technical Field

[0001] The invention belongs to the technical field of metallized ceramic substrates and relates to a metallized ceramic substrate and a preparation method thereof. Background Art

[0002] Metallized ceramic substrates are widely used in new energy vehicles, electronic and electrical, semiconductor packaging and other fields. With the rapid development of these industries, the requirements for metallized ceramic substrates are getting higher and higher. For metallized ceramic substrates, the ceramic substrate is a supporting structure with the characteristics of high strength, high thermal conductivity, corrosion resistance, etc. The metal film provides the conductive function. The reliability and stability of the metallized ceramic substrate depends on the bonding strength between the metal film and the substrate. Traditional metallized ceramics are mainly prepared by sintering metal powder, but the metal layer and ceramic substrate of the metallized ceramics prepared by this method have poor bonding strength and low yield. Summary of the invention

[0003] In order to solve the above technical problems, an object of the present invention is to provide a metallized ceramic substrate and a preparation method thereof.

[0004] The present invention provides a metallized ceramic substrate, comprising: a ceramic substrate and a Ti thin film layer, a Pu thin film layer and an Au thin film layer sequentially deposited on the ceramic substrate by a magnetron sputtering coating method.

[0005] Furthermore, the ceramic substrate is a commercial alumina ceramic substrate or a commercial aluminum nitride ceramic substrate.

[0006] Furthermore, the side of the ceramic substrate that needs to be plated with the metal film layer needs to be polished, and the surface roughness after polishing is 100 nm.

[0007] Furthermore, the thickness of the Ti thin film layer is 100 nm, the thickness of the Pu thin film layer is 200 nm, and the thickness of the Au thin film layer is 500 nm.

[0008] Furthermore, the Ti film layer is a connecting layer that can enhance the bonding force between the ceramic substrate and the metal film; the Pu film layer is a buffer layer that can prevent the metal films from diffusing each other during high-temperature service; and the Au film layer is a conductive layer that provides good conductivity for the metallized ceramic substrate.

[0009] The present invention also provides a method for preparing a metallized ceramic substrate, comprising:

[0010] Step 1: Immerse the ceramic in alcohol, ultrasonicate for 30 minutes, take it out and immerse it in acetone, ultrasonicate for 30 minutes, take it out and immerse it in deionized water, ultrasonicate for 30 minutes; repeat this cycle three times, and at the end of the last cleaning, quickly blow dry the ceramic substrate under a nitrogen gun and store it in a dry closed container;

[0011] Step 2: The side of the ceramic substrate that needs to be plated with a metal film layer needs to be polished, and the surface roughness after polishing is 100nm;

[0012] Step 3: Using magnetron sputtering coating technology, adopting the common industrial coating process, and using sequential deposition method, Ti thin film layer, Pt thin film layer and Au thin film layer are deposited on the polished ceramic substrate in sequence; the magnetron sputtering coating parameters are: the back vacuum degree is 5×10 -5 Pa, the Ar gas pressure was 0.8 Pa, the sample disk rotation speed was 20 r / min, and the substrate temperature was 300 °C.

[0013] Furthermore, alcohol and acetone were of analytical grade.

[0014] Furthermore, the sputtering power of the Ti thin film layer is 80 W, the power supply used is a DC power supply, the deposition time is 20 min, and the deposition rate is 5 nm / min.

[0015] Furthermore, the sputtering power of the Pt thin film layer was 80 W, the power supply used was a DC power supply, the deposition time was 15 min, and the deposition rate was 13.3 nm / min.

[0016] Furthermore, the sputtering power of the Au thin film layer was 80 W, the power supply used was a DC power supply, the deposition time was 25 min, and the deposition rate was 20 nm / min.

[0017] A metallized ceramic substrate and a preparation method thereof of the present invention have the following beneficial effects:

[0018] (1) The metallized ceramic substrate of the present invention comprises a ceramic substrate and a Ti thin film layer, a Pu thin film layer, and an Au thin film layer sequentially deposited on the ceramic substrate by magnetron sputtering coating. The Ti thin film layer has a connecting function, which can enhance the bonding force between the ceramic substrate and the metal thin film. The Pu thin film layer has a buffering function, which can prevent the metal thin films from diffusing each other when in high-temperature service. The Au thin film layer has a conductive function, which provides good conductivity for the metallized ceramic substrate.

[0019] (2) The present invention uses magnetron sputtering coating to sequentially deposit multiple layers of metal films on the surface of a ceramic substrate. When depositing the metal films, the surface temperature of the ceramic substrate is 300°C. The high deposition temperature enables the incident metal atoms (ions) or atomic groups (ion groups) to have greater energy when deposited on the ceramic substrate, thereby better diffusing, effectively eliminating the internal stress of the metal film, and greatly improving the crystallization quality of the metal film, all of which are conducive to improving the bonding strength between the metal layer film and the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic structural diagram of the metallized ceramic substrate of the present invention. DETAILED DESCRIPTION

[0021] like Figure 1 As shown, a metallized ceramic substrate of the present invention comprises: a ceramic substrate 1 and a Ti thin film layer 2, a Pu thin film layer 3, and an Au thin film layer 4 sequentially deposited on the ceramic substrate by magnetron sputtering coating.

[0022] The ceramic substrate 1 is a commercial alumina ceramic substrate or a commercial aluminum nitride ceramic substrate.

[0023] The side of the ceramic substrate 1 that needs to be plated with a metal film layer needs to be polished, and the surface roughness after polishing is 100 nm.

[0024] The thickness of the Ti thin film layer 2 is 100 nm, the thickness of the Pu thin film layer 3 is 200 nm, and the thickness of the Au thin film layer 4 is 500 nm.

[0025] The Ti film layer 2 has a connecting function, which can enhance the bonding force between the ceramic substrate and the metal film. The Pu film layer 3 has a Pu buffering function, which can prevent the metal films from diffusing each other when used at high temperatures. The Au film layer 4 has a conductive function, which provides good conductivity for the metallized ceramic substrate.

[0026] A method for preparing a metallized ceramic substrate of the present invention comprises:

[0027] Step 1: Immerse the ceramic in alcohol and ultrasonicate for 30 minutes. Take it out and immerse it in acetone and ultrasonicate for 30 minutes. Take it out and immerse it in deionized water and ultrasonicate for 30 minutes. Repeat this cycle three times. At the end of the last cleaning, quickly blow dry the ceramic substrate under a nitrogen gun and store it in a dry closed container.

[0028] Step 2: The side of the ceramic substrate that needs to be plated with a metal film layer needs to be polished, and the surface roughness after polishing is 100nm.

[0029] Step 3: Using magnetron sputtering coating technology, adopting the common industrial coating process, and using sequential deposition method, Ti thin film layer, Pt thin film layer and Au thin film layer are deposited on the polished ceramic substrate in sequence; the magnetron sputtering coating parameters are: the back vacuum degree is 5×10 -5 Pa, the Ar gas pressure was 0.8 Pa, the sample disk rotation speed was 20 r / min, and the substrate temperature was 300 °C.

[0030] During specific implementation, alcohol and acetone were both analytically pure.

[0031] In the specific implementation, the sputtering power of the Ti thin film layer is 80 W, the power supply used is a DC power supply, the deposition time is 20 min, and the deposition rate is 5 nm / min.

[0032] In the specific implementation, the sputtering power of the Pt thin film layer is 80 W, the power supply used is a DC power supply, the deposition time is 15 min, and the deposition rate is 13.3 nm / min.

[0033] In the specific implementation, the sputtering power of the Au thin film layer is 80 W, the power supply used is a DC power supply, the deposition time is 25 min, and the deposition rate is 20 nm / min.

[0034] In specific implementation, the target material used for deposition has the following specifications:

[0035] The Ti target has a size of 4 inches, a thickness of 5 mm, and a purity of 99.99%.

[0036] The size of the Pt target is 4 inches, the thickness is 3 mm, and the purity is 99.99%.

[0037] The Au target is 4 inches in size, 5mm thick, and 99.99% pure.

[0038] The prepared metallized ceramic substrate was fixed on the surface of the heating platform, and the temperature of the heating platform was set to 250℃, 270℃, and 300℃ respectively. The bonding strength of the metallized ceramic was evaluated at different heating platform set temperatures, and the surface of the metallized ceramic was scratched with tweezers. The test results showed that there were no wrinkles or separation on the surface of the metallized ceramic. The test results show that the metallized ceramic substrate prepared by this method still has good bonding strength at 300℃.

[0039] The above description is only a preferred embodiment of the present invention and is not intended to limit the concept of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A metallized ceramic substrate, characterized in that: include: A ceramic substrate and a Ti thin film layer, a Pu thin film layer and an Au thin film layer sequentially deposited on the ceramic substrate by magnetron sputtering coating.

2. The metallized ceramic substrate according to claim 1, characterized in that: The ceramic substrate is a commercial alumina ceramic substrate or a commercial aluminum nitride ceramic substrate.

3. The metallized ceramic substrate according to claim 1, characterized in that: The side of the ceramic substrate that needs to be plated with a metal film layer needs to be polished, and the surface roughness after polishing is 100 nm.

4. The metallized ceramic substrate according to claim 1, characterized in that: The thickness of the Ti thin film layer is 100 nm, the thickness of the Pu thin film layer is 200 nm, and the thickness of the Au thin film layer is 500 nm.

5. The metallized ceramic substrate according to claim 1, characterized in that: The Ti film layer is a connecting layer that can enhance the bonding force between the ceramic substrate and the metal film; the Pu film layer is a buffer layer that can prevent the metal films from diffusing each other during high-temperature service; and the Au film layer is a conductive layer that provides good conductivity for the metallized ceramic substrate.

6. A method for preparing a metallized ceramic substrate, characterized in that: include: Step 1: Immerse the ceramic in alcohol, ultrasonicate for 30 minutes, take it out and immerse it in acetone, ultrasonicate for 30 minutes, take it out and immerse it in deionized water, ultrasonicate for 30 minutes; repeat this cycle three times, and at the end of the last cleaning, quickly blow dry the ceramic substrate under a nitrogen gun and store it in a dry closed container; Step 2: The side of the ceramic substrate that needs to be plated with a metal film layer needs to be polished, and the surface roughness after polishing is 100nm; Step 3: Using magnetron sputtering coating technology, adopting the common industrial coating process, and using sequential deposition method, Ti thin film layer, Pt thin film layer and Au thin film layer are deposited on the polished ceramic substrate in sequence; the magnetron sputtering coating parameters are: the back vacuum degree is 5×10 -5 Pa, the Ar gas pressure was 0.8 Pa, the sample disk rotation speed was 20 r / min, and the substrate temperature was 300 °C.

7. The method for preparing a metallized ceramic substrate according to claim 6, characterized in that: Alcohol and acetone were of analytical grade.

8. The method for preparing a metallized ceramic substrate according to claim 6, characterized in that: The sputtering power of the Ti thin film layer is 80 W, the power supply used is a DC power supply, the deposition time is 20 min, and the deposition rate is 5 nm / min.

9. The method for preparing a metallized ceramic substrate according to claim 6, characterized in that: The sputtering power of the Pt thin film layer is 80W, the power supply used is a DC power supply, the deposition time is 15min, and the deposition rate is 13.3nm / min.

10. The method for preparing a metallized ceramic substrate according to claim 6, characterized in that: The sputtering power of the Au thin film layer is 80 W, the power supply used is a DC power supply, the deposition time is 25 min, and the deposition rate is 20 nm / min.

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